TWI784497B

TWI784497B - Atomic layer deposition device with knocking device

Info

Publication number: TWI784497B
Application number: TW110114922A
Authority: TW
Inventors: 林俊成; 古家誠
Original assignee: 天虹科技股份有限公司
Priority date: 2021-04-26
Filing date: 2021-04-26
Publication date: 2022-11-21
Also published as: TW202242181A

Abstract

The invention provides an atomic layer deposition device with knocking device, which includes a vacuum chamber, a shaft sealing device, a driving unit and a knocking device. The driving unit is connected to a rear wall of the vacuum chamber through the shaft sealing device, and drives the vacuum chamber to rotate. The shaft sealing device includes an outer tube body and an inner tube body, wherein the inner tube body is arranged in an accommodating space of the outer tube body. At least one air extraction line and at least one air intake line are located in the inner tube. The knocking device is adjacent to a front wall of the vacuum chamber and is used to knock the front wall or side wall of the vacuum chamber to prevent the powders in the reaction space from sticking to the inner surface of the vacuum chamber.

Description

敲擊式粉末原子層沉積裝置 Percussion type powder atomic layer deposition device

本發明有關於一種敲擊式粉末原子層沉積裝置，包括一敲擊裝置與真空腔體的前壁相鄰，並用以敲擊真空腔體的前壁或側壁，以避免真空腔體內的粉末沾黏。 The invention relates to a percussion type powder atomic layer deposition device, comprising a percussion device adjacent to the front wall of the vacuum cavity, and used for percussion on the front wall or side wall of the vacuum cavity, so as to prevent the powder in the vacuum cavity from being stained. sticky.

奈米顆粒(nanoparticle)一般被定義為在至少一個維度上小於100奈米的顆粒，奈米顆粒與宏觀物質在物理及化學上的特性截然不同。一般而言，宏觀物質的物理特性與本身的尺寸無關，但奈米顆粒則非如此，奈米顆粒在生物醫學、光學和電子等領域都具有潛在的應用。 Nanoparticles are generally defined as particles smaller than 100 nanometers in at least one dimension. Nanoparticles have completely different physical and chemical properties from macroscopic substances. In general, the physical properties of macroscopic substances are independent of their size, but this is not the case for nanoparticles, which have potential applications in fields such as biomedicine, optics and electronics.

量子點(Quantum Dot)是半導體的奈米顆粒，目前研究的半導體材料為II-VI材料，如ZnS、CdS、CdSe等，其中又以CdSe最受到矚目。量子點的尺寸通常在2至50奈米之間，量子點被紫外線照射後，量子點中的電子會吸收能量，並從價帶躍遷到傳導帶。被激發的電子從傳導帶回到價帶時，會通過發光釋放出能量。 Quantum Dot (Quantum Dot) is a nano-particle of a semiconductor. The semiconductor materials currently being studied are II-VI materials, such as ZnS, CdS, CdSe, etc., among which CdSe has attracted the most attention. The size of quantum dots is usually between 2 and 50 nanometers. After the quantum dots are irradiated with ultraviolet light, the electrons in the quantum dots will absorb energy and transition from the valence band to the conduction band. When the excited electrons return from the conduction band to the valence band, they release energy by emitting light.

量子點的能隙與尺寸大小相關，量子點的尺寸越大能隙越小，經照射後會發出波長較長的光，量子點的尺寸越小則能隙越大，經照射後會發出波長較短的光。例如5到6奈米的量子點會發出橘光或紅光，而2到3奈米的量子點則會發出藍光或綠光，當然光色取決於量子點的材料組成。 The energy gap of quantum dots is related to the size. The larger the size of the quantum dots, the smaller the energy gap. After irradiation, it will emit light with a longer wavelength. The smaller the size of the quantum dots, the larger the energy gap, and it will emit wavelength light after irradiation shorter light. For example, quantum dots of 5 to 6 nanometers will emit orange or red light, while quantum dots of 2 to 3 nanometers will emit blue or green light, of course, the light color depends on the material composition of the quantum dots.

應用量子點的發光二極體(LED)產生的光可接近連續光譜，同時具有高演色性，並有利於提高發光二極體的發光品質。此外亦可透過改變量子點的尺寸調整發射光的波長，使得量子點成為新一代發光裝置及顯示器的發展重點。 The light generated by the light-emitting diode (LED) using quantum dots can be close to the continuous spectrum, and at the same time has high color rendering, and is conducive to improving the luminous quality of the light-emitting diode. In addition, the wavelength of emitted light can also be adjusted by changing the size of quantum dots, making quantum dots the focus of the development of a new generation of light-emitting devices and displays.

量子點雖然具有上述的優點及特性，但在應用或製造的過程中容易產生團聚現象。此外量子點具有較高的表面活性，並容易與空氣及水氣發生反應，進而縮短量子點的壽命。 Although quantum dots have the above-mentioned advantages and characteristics, they are prone to agglomeration during application or manufacturing. In addition, quantum dots have high surface activity and are prone to react with air and water vapor, thereby shortening the life of quantum dots.

具體來說，將量子點製作成為發光二極體的密封膠時，可能會產生團聚效應，而降低了量子點的光學性能。此外，量子點在製作成發光二極體的密封膠後，外界的氧或水氣仍可能會穿過密封膠而接觸量子點的表面，導致量子點氧化，並影響量子點及發光二極體的效能或使用壽命。量子點的表面缺陷及懸空鍵(dangling bonds)亦可能造成非輻射復合(nonradiative recombination)，同樣會影響量子點的發光效率。 Specifically, when quantum dots are made into sealants for light-emitting diodes, agglomeration effects may occur, which reduces the optical performance of quantum dots. In addition, after the quantum dots are made into the sealant of the light-emitting diode, the external oxygen or moisture may still pass through the sealant and contact the surface of the quantum dots, causing the quantum dots to oxidize and affect the quantum dots and light-emitting diodes. performance or service life. Surface defects and dangling bonds of quantum dots may also cause nonradiative recombination, which also affects the luminous efficiency of quantum dots.

目前業界主要透過原子層沉積(atomic layer deposition，ALD)在量子點的表面形成一層奈米厚度的薄膜，或者是在量子點的表面形成多層薄膜，以形成量子井結構。 At present, the industry mainly forms a nanometer-thick film on the surface of the quantum dots through atomic layer deposition (ALD), or forms a multilayer film on the surface of the quantum dots to form a quantum well structure.

原子層沉積可以在基板上形成厚度均勻的薄膜，並可有效控制薄膜的厚度，理論上亦適用於三維的量子點。量子點靜置在承載盤時，相鄰的量子點之間會存在接觸點，使得原子層沉積的前驅物無法接觸這些接觸點，並導致無法在所有的奈米顆粒的表面皆形成厚度均勻的薄膜。 Atomic layer deposition can form a thin film with uniform thickness on the substrate, and can effectively control the thickness of the film. It is also suitable for three-dimensional quantum dots in theory. When the quantum dots are placed on the carrier plate, there will be contact points between adjacent quantum dots, so that the precursors of atomic layer deposition cannot contact these contact points, and it will not be possible to form uniform thickness on the surface of all nanoparticles. film.

為了解決上述先前技術面臨的問題，本發明提出一種敲擊式粉末原子層沉積裝置，主要在真空腔體的前壁設置一敲擊裝置，並透過敲擊裝置敲擊真空腔體的前壁或側壁，以將沉積過程中沾黏在真空腔體的內表面上粉末震落。 In order to solve the problems faced by the above-mentioned prior art, the present invention proposes a knocking type powder atomic layer deposition device, which mainly installs a knocking device on the front wall of the vacuum chamber, and knocks the front wall or the vacuum chamber through the knocking device. The side wall is used to shake off the powder adhered to the inner surface of the vacuum chamber during the deposition process.

本發明的一目的，在於提供一種敲擊式粉末原子層沉積裝置，主要包括一驅動單元、一軸封裝置、一真空腔體及一敲擊裝置，其中驅動單元透過軸封裝置連接真空腔體的一後壁。敲擊裝置與真空腔體的一前壁相鄰，並敲擊真空腔體的前壁或側壁以震動真空腔體的內表面，以去除沾黏在真空腔體的內表面上的粉末。 An object of the present invention is to provide a percussion type powder atomic layer deposition device, which mainly includes a drive unit, a shaft seal device, a vacuum chamber and a percussion device, wherein the drive unit is connected to the vacuum chamber through the shaft seal device. a rear wall. The knocking device is adjacent to a front wall of the vacuum chamber, and strikes the front wall or the side wall of the vacuum chamber to vibrate the inner surface of the vacuum chamber to remove powder stuck on the inner surface of the vacuum chamber.

一般而言，在對粉末進行原子層沉積的過程中，很可能無法在沾黏在真空腔體的粉末的表面形成均勻的薄膜，進而影響粉末的良率、壽命及效能。為此本發明提出透過敲擊裝置敲擊真空腔體的前壁，以避免粉末沾黏在真空腔體的內表面。 Generally speaking, during the atomic layer deposition process of powder, it is likely that a uniform film cannot be formed on the surface of the powder adhered to the vacuum chamber, thereby affecting the yield, life and performance of the powder. For this reason, the present invention proposes to knock the front wall of the vacuum cavity through the knocking device, so as to prevent the powder from adhering to the inner surface of the vacuum cavity.

為了達到上述的目的，本發明提出一種敲擊式粉末原子層沉積裝置，包括：一真空腔體，包括一前壁、一後壁及一側壁，前壁面對後壁，且前壁經由側壁連接後壁，其中前壁、後壁及側壁形成一反應空間，反應空間用以容置複數顆粉末；一軸封裝置，連接真空腔體的後壁，並包括一外管體及一內管體，其中外管體具有一容置空間，用以容置內管體；一驅動單元，連接軸封裝置，並經由軸封裝置帶動真空腔體轉動；至少一抽氣管線，位於內管體內，流體連接真空腔體的反應空間，並用以抽出反應空間內的一氣體；至少一進氣管線，位於內管體內，流體連接真空腔體的反應空間，並用以將一前驅物輸送至反應空間；及一敲擊裝置，與真空腔體的前壁相鄰，並用以敲擊真空腔體的前壁或側壁。 In order to achieve the above object, the present invention proposes a percussion type powder atomic layer deposition device, comprising: a vacuum chamber, including a front wall, a rear wall and a side wall, the front wall faces the rear wall, and the front wall passes through the side wall Connect the rear wall, wherein the front wall, the rear wall and the side wall form a reaction space, and the reaction space is used to accommodate a plurality of powders; a shaft seal device is connected to the rear wall of the vacuum chamber, and includes an outer tube body and an inner tube body , wherein the outer tube body has an accommodating space for accommodating the inner tube body; a drive unit is connected to the shaft sealing device and drives the vacuum cavity to rotate through the shaft sealing device; at least one exhaust pipeline is located in the inner tube body, The fluid is connected to the reaction space of the vacuum chamber, and is used to extract a gas in the reaction space; at least one gas inlet line is located in the inner tube body, and is fluidly connected to the reaction space of the vacuum chamber. a reaction space for delivering a precursor to the reaction space; and a striking device adjacent to the front wall of the vacuum chamber and used for striking the front wall or the side wall of the vacuum chamber.

所述的敲擊式粉末原子層沉積裝置，其中敲擊裝置包括一馬達及一敲擊部，馬達連接敲擊部，並驅動敲擊部敲擊真空腔體的前壁或側壁。 In the percussion type powder atomic layer deposition device, the percussion device includes a motor and a percussion part, the motor is connected with the percussion part, and drives the percussion part to strike the front wall or the side wall of the vacuum chamber.

所述的敲擊式粉末原子層沉積裝置，其中敲擊裝置包括一緩衝部連接敲擊部，敲擊部經由緩衝部敲擊真空腔體的前壁或側壁。 In the percussion type powder atomic layer deposition device, the percussion device includes a buffer part connected to the percussion part, and the percussion part strikes the front wall or the side wall of the vacuum cavity through the buffer part.

所述的敲擊式粉末原子層沉積裝置，其中進氣管線包括至少一非反應氣體輸送管線及至少一反應氣體輸送管線，非反應氣體輸送管線用以將一非反應氣體輸送至反應空間，以吹動反應空間內的粉末，而反應氣體輸送管線則用以將前驅物輸送至反應空間。 The percussion type powder atomic layer deposition device, wherein the gas inlet pipeline includes at least one non-reactive gas delivery pipeline and at least one reactive gas delivery pipeline, and the non-reactive gas delivery pipeline is used to deliver a non-reactive gas to the reaction space, so as to The powder in the reaction space is blown, and the reaction gas delivery pipeline is used to deliver the precursor to the reaction space.

所述的敲擊式粉末原子層沉積裝置，其中非反應氣體輸送管線包括一延伸管線，延伸管線位於反應空間內，並朝真空腔體的前壁的方向延伸。 In the percussion type powder atomic layer deposition device, the non-reactive gas delivery pipeline includes an extension pipeline, and the extension pipeline is located in the reaction space and extends towards the front wall of the vacuum chamber.

所述的敲擊式粉末原子層沉積裝置，包括一過濾單元位於內管體連接反應空間的一端，抽氣管線經由過濾單元流體連接反應空間，而延伸管線穿過過濾單元。 The percussion-type powder atomic layer deposition device includes a filter unit located at one end of the inner tube body connected to the reaction space, the exhaust pipeline is fluidly connected to the reaction space through the filter unit, and the extension pipeline passes through the filter unit.

所述的敲擊式粉末原子層沉積裝置，其中延伸管線包括至少一出風口朝向真空腔體的前壁或側壁的方向。 In the percussion type powder atomic layer deposition device, the extension pipeline includes at least one air outlet facing the front wall or the side wall of the vacuum chamber.

所述的敲擊式粉末原子層沉積裝置，其中進氣管線用以將一非反應氣體輸送至反應空間，並以非反應氣體吹動反應空間內的粉末。 In the percussion type powder atomic layer deposition device, the gas inlet line is used to deliver a non-reactive gas to the reaction space, and blow the powder in the reaction space with the non-reactive gas.

所述的敲擊式粉末原子層沉積裝置，其中內管體由外管體的容置空間延伸至真空腔體的反應空間，並在反應空間內形成一凸出管部。 In the percussion type powder atomic layer deposition device, the inner tube extends from the accommodating space of the outer tube to the reaction space of the vacuum chamber, and forms a protruding tube in the reaction space.

所述的敲擊式粉末原子層沉積裝置，包括一承載部及一位置調整機構，軸封裝置及驅動單元設置於承載部上，而敲擊裝置則透過位置調整機構連接承載部，並透過位置調整機構帶動敲擊裝置相對於承載部位移或轉動，以改變敲擊裝置與真空腔體之間的間隔。 The percussion type powder atomic layer deposition device includes a bearing part and a position adjustment mechanism, the shaft seal device and the drive unit are arranged on the bearing part, and the knocking device is connected to the bearing part through the position adjustment mechanism, and through the position The adjustment mechanism drives the knocking device to displace or rotate relative to the bearing part, so as to change the distance between the knocking device and the vacuum cavity.

10:敲擊式粉末原子層沉積裝置 10: Percussion powder atomic layer deposition device

11:真空腔體 11: Vacuum cavity

111:前壁 111: front wall

113:後壁 113: rear wall

115:側壁 115: side wall

117:蓋板 117: cover plate

119:腔體 119: Cavity

12:反應空間 12: Reaction space

121:粉末 121: powder

13:軸封裝置 13: Shaft seal device

130:凸出管部 130: protruding tube

131:外管體 131: outer tube body

132:容置空間 132:Accommodating space

133:內管體 133: inner tube body

134:連接空間 134: Connect Space

139:過濾單元 139: filter unit

14:敲擊裝置 14: Percussion device

141:馬達 141: motor

143:敲擊部 143: Percussion Department

145:緩衝部 145: Buffer

147:連接支架 147: Connection bracket

15:驅動單元 15: Drive unit

16:加熱裝置 16: Heating device

171:抽氣管線 171: Extraction pipeline

172:延伸管線 172: Extension pipeline

1721:出風口 1721: Air outlet

173:進氣管線 173: Intake pipeline

175:非反應氣體輸送管線 175: Non-reactive gas delivery pipeline

177:加熱器 177: heater

179:溫度感測單元 179: Temperature sensing unit

191:承載部 191: bearing part

193:支撐架 193: support frame

195:位置調整機構 195: Position adjustment mechanism

[圖1]為本發明敲擊式粉末原子層沉積裝置一實施例的立體示意圖。 [ Fig. 1 ] is a three-dimensional schematic diagram of an embodiment of the knocking type powder atomic layer deposition apparatus of the present invention.

[圖2]為本發明敲擊式粉末原子層沉積裝置一實施例的剖面示意圖。 [ Fig. 2 ] is a schematic cross-sectional view of an embodiment of the percussion type powder atomic layer deposition apparatus of the present invention.

[圖3]為本發明敲擊式粉末原子層沉積裝置的軸封裝置一實施例的剖面示意圖。 [ Fig. 3 ] is a schematic cross-sectional view of an embodiment of the shaft sealing device of the knocking type powder atomic layer deposition device of the present invention.

[圖4]為本發明敲擊式粉末原子層沉積裝置又一實施例的剖面示意圖。 [ Fig. 4 ] is a schematic cross-sectional view of another embodiment of the percussion type powder atomic layer deposition apparatus of the present invention.

[圖5]為本發明敲擊式粉末原子層沉積裝置又一實施例的剖面示意圖。 [ Fig. 5 ] is a schematic cross-sectional view of another embodiment of the percussion type powder atomic layer deposition apparatus of the present invention.

[圖6]為本發明敲擊式粉末原子層沉積裝置又一實施例的剖面示意圖。 [ Fig. 6 ] is a schematic cross-sectional view of another embodiment of the percussion type powder atomic layer deposition apparatus of the present invention.

請參閱圖1、圖2及圖3，分別為本發明敲擊式粉末原子層沉積裝置一實施例的立體示意圖、剖面示意圖及敲擊式粉末原子層沉積裝置的軸封裝置一實施例的剖面示意圖。如圖所示，敲擊式粉末原子層沉積裝置10主要包括一真空腔體11、一軸封裝置13、一驅動單元15及一敲擊裝置14，其中驅動單元15透過軸封裝置13連接真空腔體11，並帶動真空腔體11轉動。 Please refer to Fig. 1, Fig. 2 and Fig. 3, which are respectively a three-dimensional schematic view, a schematic cross-sectional view and an axis of a percussion type powder atomic layer deposition device of an embodiment of the percussion type powder atomic layer deposition device of the present invention. A schematic cross-sectional view of an embodiment of the packaging device. As shown in the figure, the percussion type powder atomic layer deposition device 10 mainly includes a vacuum chamber 11, a shaft sealing device 13, a driving unit 15 and a percussion device 14, wherein the driving unit 15 is connected to the vacuum chamber through the shaft sealing device 13 body 11, and drive the vacuum cavity 11 to rotate.

真空腔體11包括一前壁111、一後壁113及一側壁115，其中前壁111面對後壁113，而側壁115位於前壁111及後壁113之間，並連接前壁111及後壁113，以在前壁111、後壁113及側壁115之間形成一反應空間12。 The vacuum chamber 11 includes a front wall 111, a rear wall 113 and a side wall 115, wherein the front wall 111 faces the rear wall 113, and the side wall 115 is located between the front wall 111 and the rear wall 113, and connects the front wall 111 and the rear wall. wall 113 to form a reaction space 12 between the front wall 111 , the rear wall 113 and the side wall 115 .

反應空間12用以容置複數顆粉末121，其中粉末121可以是量子點(Quantum Dot)，例如ZnS、CdS、CdSe等II-VI半導體材料，而形成在量子點上的薄膜可以是三氧化二鋁(Al2O3)。在本發明一實施例中，真空腔體11可包括一蓋板117及一腔體119，其中蓋板117用以覆蓋及連接腔體119，以在兩者之間形成反應空間12。蓋板117可以是真空腔體11的前壁111，而腔體119則由真空腔體11的後壁113及側壁115所構成。 The reaction space 12 is used to accommodate a plurality of powders 121, wherein the powders 121 can be quantum dots (Quantum Dot), such as ZnS, CdS, CdSe and other II-VI semiconductor materials, and the thin film formed on the quantum dots can be made of Aluminum (Al2O3). In an embodiment of the present invention, the vacuum chamber 11 may include a cover plate 117 and a cavity body 119 , wherein the cover plate 117 is used to cover and connect the cavity body 119 to form a reaction space 12 therebetween. The cover plate 117 can be the front wall 111 of the vacuum cavity 11 , and the cavity 119 is formed by the rear wall 113 and the side wall 115 of the vacuum cavity 11 .

軸封裝置13連接真空腔體11的後壁113，並包括一外管體131及一內管體133，其中外管體131具有一容置空間132，而內管體133則具有一連接空間134，例如外管體131及內管體133可為空心柱狀體。外管體131的容置空間132用以容置內管體133，其中外管體131及內管體133同軸設置。軸封裝置13可以是一般常見的軸封或磁流體軸封，主要用以隔離真空腔體11的反應空間12與外部的空間，以維持反應空間12的真空。 The shaft sealing device 13 is connected to the rear wall 113 of the vacuum cavity 11 and includes an outer tube body 131 and an inner tube body 133, wherein the outer tube body 131 has a receiving space 132, and the inner tube body 133 has a connecting space 134. For example, the outer tube body 131 and the inner tube body 133 may be hollow cylindrical bodies. The accommodating space 132 of the outer tube body 131 is used for accommodating the inner tube body 133 , wherein the outer tube body 131 and the inner tube body 133 are arranged coaxially. The shaft seal device 13 can be a common shaft seal or a magnetic fluid shaft seal, and is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space, so as to maintain the vacuum of the reaction space 12 .

驅動單元15連接軸封裝置13的一端，而軸封裝置13的另一端則連接真空腔體11的後壁113。驅動單元15透過軸封裝置13帶動真空腔體11轉動，例如驅動單元15為馬達，透過外管體131連接真空腔體11的後壁113，並經由外管體131帶動真空腔體11轉動。此外驅動單元15並未連接內管體 133，因此驅動單元15帶動外管體131及真空腔體11轉動時，內管體133不會隨著轉動。 The driving unit 15 is connected to one end of the shaft sealing device 13 , and the other end of the shaft sealing device 13 is connected to the rear wall 113 of the vacuum cavity 11 . The driving unit 15 drives the vacuum chamber 11 to rotate through the shaft sealing device 13 . For example, the driving unit 15 is a motor connected to the rear wall 113 of the vacuum chamber 11 through the outer tube 131 and drives the vacuum chamber 11 to rotate through the outer tube 131 . In addition, the drive unit 15 is not connected to the inner tube 133, so when the driving unit 15 drives the outer tube body 131 and the vacuum cavity 11 to rotate, the inner tube body 133 will not rotate accordingly.

驅動單元15可帶動外管體131及真空腔體11以同一方向持續轉動，例如順時針或逆時針方向持續轉動。在不同實施例中，驅動單元15可帶動外管體131及真空腔體11以順時針的方向旋轉一特定角度後，再以逆時針的方向旋轉特定角度，例如特定角度可為360度。真空腔體11轉動時會攪拌反應空間12內的粉末121，以利於粉末121均勻受熱並與前驅物或非反應氣體接觸。 The driving unit 15 can drive the outer tube body 131 and the vacuum cavity 11 to continuously rotate in the same direction, for example, continuously rotate clockwise or counterclockwise. In different embodiments, the driving unit 15 can drive the outer tube body 131 and the vacuum cavity 11 to rotate a specific angle in a clockwise direction, and then rotate a specific angle in a counterclockwise direction, for example, the specific angle can be 360 degrees. When the vacuum chamber 11 rotates, it will stir the powder 121 in the reaction space 12 to facilitate the powder 121 to be heated evenly and contact with the precursor or non-reactive gas.

內管體133的連接空間134內可設置至少一抽氣管線171、至少一進氣管線173、至少一非反應氣體輸送管線175、一加熱器177及/或一溫度感測單元179，如圖2及圖3所示。 In the connection space 134 of the inner tube body 133, at least one exhaust line 171, at least one intake line 173, at least one non-reactive gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 can be arranged, as shown in the figure 2 and Figure 3.

抽氣管線171流體連接真空腔體11的反應空間12，並用以抽出反應空間12內的氣體，使得反應空間12為真空狀態，以進行原子層沉積製程。具體而言抽氣管線171可連接一幫浦，並透過幫浦抽出反應空間12內的氣體。 The pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12 so that the reaction space 12 is in a vacuum state to perform an atomic layer deposition process. Specifically, the pumping line 171 can be connected with a pump, and the gas in the reaction space 12 can be pumped out through the pump.

進氣管線173流體連接真空腔體11的反應空間12，並用以將一前驅物及/或一非反應氣體輸送至反應空間12，其中非反應氣體可以是氮氣或氬氣等惰性氣體。在實際應用時，進氣管線173可能會將一載送氣體(carrier gas)及前驅物一起輸送到反應空間12內。此外進氣管線173亦可將非反應氣體輸送至反應空間12內，並透過抽氣管線171抽氣，以去除反應空間12內的前驅物。在本發明一實施例中，進氣管線173可連接複數個分枝管線，並分別透過各個分枝管線將不同的前驅物依序輸送至反應空間12內。 The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for delivering a precursor and/or a non-reactive gas to the reaction space 12, wherein the non-reactive gas may be an inert gas such as nitrogen or argon. In actual application, the gas inlet line 173 may deliver a carrier gas and precursors into the reaction space 12 together. In addition, the gas inlet line 173 can also transport the non-reactive gas into the reaction space 12 , and extract gas through the gas extraction line 171 to remove the precursors in the reaction space 12 . In an embodiment of the present invention, the gas inlet pipeline 173 can be connected with a plurality of branch pipelines, and different precursors are sequentially transported into the reaction space 12 through each branch pipeline.

進氣管線173可增大輸送至反應空間12的非反應氣體的流量，並透過非反應氣體吹動反應空間12內的粉末121，使得粉末121受到非反應氣體的帶動，擴散到反應空間12的各個區域。 The gas inlet line 173 can increase the flow rate of the non-reactive gas delivered to the reaction space 12, and blow the powder 121 in the reaction space 12 through the non-reactive gas, so that the powder 121 is driven by the non-reactive gas and diffuses into the reaction space 12. various regions.

在本發明一實施例中，進氣管線173可包括至少一非反應氣體輸送管線175及至少一反應氣體輸送管線。非反應氣體輸送管線175流體連接真空腔體11的反應空間12，並用以將一非反應氣體輸送至反應空間12。非反應氣體用以吹動反應空間12內的粉末121，配合驅動單元15驅動真空腔體11轉動，可有效且均勻的翻攪反應空間12內的粉末121，並在各個粉末121的表面沉積厚度均勻的薄膜。反應氣體輸送管線流體連接反應空間12，並用以將前驅物輸送至反應空間12。 In an embodiment of the present invention, the intake pipeline 173 may include at least one non-reactive gas delivery pipeline 175 and at least one reactive gas delivery pipeline. The non-reactive gas delivery line 175 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used to deliver a non-reactive gas to the reaction space 12 . The non-reactive gas is used to blow the powder 121 in the reaction space 12, and cooperate with the driving unit 15 to drive the vacuum chamber 11 to rotate, which can effectively and uniformly stir the powder 121 in the reaction space 12, and deposit thickness on the surface of each powder 121 Uniform film. The reaction gas delivery pipeline is fluidly connected to the reaction space 12 and used to deliver the precursors to the reaction space 12 .

透過驅動單元15經由軸封裝置13驅動真空腔體11轉動，並透過進氣管線173將非反應氣體輸送至反應空間12，雖然可以翻攪反應空間12內的粉末121。但在實際應用時，仍有一定數量的粉末121會沾黏在真空腔體11的內表面，造成輸送至反應空間12的前驅物無法接觸沾黏在真空腔體11上的粉末121，進而無法在所有的粉末121的表面接形成厚度均勻的薄膜。 The vacuum cavity 11 is driven to rotate through the driving unit 15 through the shaft sealing device 13 , and the non-reactive gas is delivered to the reaction space 12 through the gas inlet line 173 , although the powder 121 in the reaction space 12 can be stirred. However, in actual application, there is still a certain amount of powder 121 that will stick to the inner surface of the vacuum cavity 11, so that the precursors transported to the reaction space 12 cannot contact the powder 121 that sticks to the vacuum cavity 11, and thus cannot A thin film with a uniform thickness is formed on all the surfaces of the powder 121 .

為了解決上述及先前技術面臨的問題，本發明提出在真空腔體11的前壁111的側邊設置一敲擊裝置14，其中敲擊裝置14與真空腔體11的前壁111相鄰，並用以敲擊真空腔體11的前壁111或側壁115。 In order to solve the above-mentioned problems and the problems faced by the prior art, the present invention proposes to set a knocking device 14 on the side of the front wall 111 of the vacuum chamber 11, wherein the knocking device 14 is adjacent to the front wall 111 of the vacuum chamber 11, and uses to strike the front wall 111 or the side wall 115 of the vacuum cavity 11 .

敲擊裝置14在敲擊真空腔體11的前壁111或側壁115時，真空腔體11會產生震動，使得沾黏的粉末121離開真空腔體11的內表面，並散落在真空腔體11的反應空間12內。 When the knocking device 14 knocks the front wall 111 or the side wall 115 of the vacuum chamber 11, the vacuum chamber 11 will vibrate, so that the sticky powder 121 will leave the inner surface of the vacuum chamber 11 and scatter in the vacuum chamber 11 In the reaction space 12.

具體而言，透過驅動單元15、進氣管線173及敲擊裝置14的設置，可有效解決粉末121沾黏在真空腔體11的問題，並有利於在絕大部分的粉末121的表面形成厚度均勻的薄膜。 Specifically, through the setting of the driving unit 15, the intake pipeline 173 and the knocking device 14, the problem of the powder 121 sticking to the vacuum chamber 11 can be effectively solved, and it is beneficial to form a thickness on the surface of most of the powder 121. Uniform film.

在本發明一實施例中，敲擊裝置14包括一馬達141及一敲擊部143，其中馬達141連接並驅動敲擊部143敲擊真空腔體11的前壁111或側壁115。此外敲擊部143上可設置一緩衝部145，其中敲擊部143經由緩衝部145敲擊真空腔體11的前壁111或側壁115，以避免在敲擊真空腔體11過程中造成真空腔體11及/或敲擊裝置14的損壞，例如緩衝部145可為橡膠墊。 In an embodiment of the present invention, the knocking device 14 includes a motor 141 and a knocking part 143 , wherein the motor 141 is connected to and drives the knocking part 143 to knock the front wall 111 or the side wall 115 of the vacuum chamber 11 . In addition, a buffer part 145 can be set on the knocking part 143, wherein the knocking part 143 knocks the front wall 111 or the side wall 115 of the vacuum cavity 11 through the buffer part 145, so as to avoid causing the vacuum cavity In case of damage to the body 11 and/or the striking device 14, for example, the buffer portion 145 can be a rubber pad.

敲擊式粉末原子層沉積裝置10的進氣管線173及非反應氣體輸送管線175都用以將非反應氣體輸送至反應空間12，其中進氣管線173輸送的非反應氣體的流量較小，主要用以去除反應空間12內的前驅物，而非反應氣體輸送管線175輸送的非反應氣體的流量較大，主要用以吹動反應空間12內的粉末121。 Both the gas inlet pipeline 173 and the non-reactive gas delivery pipeline 175 of the percussion type powder atomic layer deposition device 10 are used to deliver the non-reactive gas to the reaction space 12, wherein the flow rate of the non-reactive gas delivered by the gas inlet pipeline 173 is relatively small, mainly The non-reactive gas delivered by the non-reactive gas pipeline 175 is used to remove the precursors in the reaction space 12 , and is mainly used to blow the powder 121 in the reaction space 12 .

具體而言，進氣管線173及非反應氣體輸送管線175將非反應氣體輸送至反應空間12的時間點不同，因此在實際應用時可不設置非反應氣體輸送管線175，並調整進氣管線173在不同時間點輸送的非反應氣體的流量。當要去除反應空間12內的前驅物時，可降低進氣管線173輸送至反應空間12的非反應氣體的流量，而要吹動反應空間12內的粉末121時，則增加進氣管線173輸送至反應空間12的非反應氣體的流量。 Specifically, the time points at which the gas inlet pipeline 173 and the non-reactive gas delivery pipeline 175 deliver the non-reactive gas to the reaction space 12 are different, so the non-reactive gas delivery pipeline 175 may not be provided in practical applications, and the inlet pipeline 173 may be adjusted at Flow rate of non-reactive gas delivered at different time points. When the precursor in the reaction space 12 is to be removed, the flow rate of the non-reactive gas delivered to the reaction space 12 by the intake line 173 can be reduced, and when the powder 121 in the reaction space 12 is to be blown, the delivery of the intake line 173 can be increased. Flow of non-reactive gas to reaction space 12 .

本發明的驅動單元15帶動外管體131及真空腔體11轉動時，內管體133及其內部的抽氣管線171、進氣管線173及/或非反應氣體輸送管線175 不會隨著轉動，有利於提高進氣管線173及/或非反應氣體輸送管線175輸送至反應空間12的非反應氣體及/或前驅物的穩定度。 When the drive unit 15 of the present invention drives the outer tube body 131 and the vacuum cavity 11 to rotate, the inner tube body 133 and its internal exhaust pipeline 171, intake pipeline 173 and/or non-reactive gas delivery pipeline 175 The non-reactive gas and/or precursors delivered to the reaction space 12 by the gas inlet line 173 and/or the non-reactive gas delivery line 175 can be improved in stability.

加熱器177用以加熱連接空間134及內管體133，並加熱內管體133內的抽氣管線171、進氣管線173及/或非反應氣體輸送管線175，以提高抽氣管線171、進氣管線173及/或非反應氣體輸送管線175內的氣體的溫度。溫度感測單元179用以量測加熱器177或連接空間134的溫度，以得知加熱器177的工作狀態。真空腔體11的內部、外部或周圍通常會設置另一個加熱裝置16，其中加熱裝置16鄰近或接觸真空腔體11的側壁115，並用以加熱真空腔體11及反應空間12。 The heater 177 is used to heat the connection space 134 and the inner pipe body 133, and heat the exhaust pipeline 171, the intake pipeline 173 and/or the non-reactive gas delivery pipeline 175 in the inner tubular body 133, so as to improve the exhaust pipeline 171, the intake pipeline The temperature of the gas in the gas line 173 and/or the non-reactive gas delivery line 175. The temperature sensing unit 179 is used to measure the temperature of the heater 177 or the connection space 134 to know the working state of the heater 177 . Another heating device 16 is usually disposed inside, outside or around the vacuum chamber 11 , wherein the heating device 16 is adjacent to or contacts the sidewall 115 of the vacuum chamber 11 and used for heating the vacuum chamber 11 and the reaction space 12 .

內管體133連接反應空間12的一端可設置一過濾單元139，其中內管體133內的抽氣管線171、進氣管線173及/或非反應氣體輸送管線175經由過濾單元139流體連接真空腔體11的反應空間12。 One end of the inner tube body 133 connected to the reaction space 12 can be provided with a filter unit 139, wherein the suction line 171, the gas inlet line 173 and/or the non-reactive gas delivery line 175 in the inner tube body 133 are fluidly connected to the vacuum chamber through the filter unit 139 The reaction space 12 of the body 11.

抽氣管線171經由過濾單元139連體連接反應空間12，可避免抽氣管線171抽出反應空間12內的氣體時，將反應空間12內的粉末121一併抽出，可減少粉末121的損耗。 The pumping line 171 is connected to the reaction space 12 through the filter unit 139, so that the powder 121 in the reaction space 12 is also pumped out when the pumping line 171 pumps out the gas in the reaction space 12, and the loss of the powder 121 can be reduced.

在本發明一實施例中，如圖4所示，進氣管線173及/或非反應氣體輸送管線175可由軸封裝置13的內管體133的連接空間134延伸至真空腔體11的反應空間12內，其中延伸至反應空間12的進氣管線173及/或非反應氣體輸送管線175可被定義為一延伸管線172。延伸管線172可穿過過濾單元139，並延伸至反應空間12。 In one embodiment of the present invention, as shown in FIG. 4 , the gas inlet line 173 and/or the non-reactive gas delivery line 175 can extend from the connecting space 134 of the inner tube body 133 of the shaft sealing device 13 to the reaction space of the vacuum cavity 11 In 12 , the gas inlet line 173 and/or the non-reactive gas delivery line 175 extending to the reaction space 12 can be defined as an extension line 172 . The extension line 172 may pass through the filter unit 139 and extend to the reaction space 12 .

在本發明一實施例中，位於反應空間12內的進氣管線173、非反應氣體輸送管線175及/或延伸管線172，朝真空腔體11的前壁111的方向延伸。在不同實施例中，位於反應空間12內的進氣管線173、非反應氣體輸送管線175及/或延伸管線172亦可朝真空腔體11的側壁115及/或後壁113的方向彎折及延伸。此外延伸管線172可包括至少一出風口1721，其中出風口1721朝向真空腔體的前壁111及/或側壁115。 In one embodiment of the present invention, the gas inlet pipeline 173, the non-reactive gas delivery pipeline 175 and/or the extension pipeline 172 located in the reaction space 12 extend toward the front wall 111 of the vacuum cavity 11. stretch. In different embodiments, the gas inlet pipeline 173, the non-reactive gas delivery pipeline 175 and/or the extension pipeline 172 located in the reaction space 12 can also be bent toward the side wall 115 and/or the rear wall 113 of the vacuum chamber 11 and extend. In addition, the extension pipeline 172 may include at least one air outlet 1721 , wherein the air outlet 1721 faces the front wall 111 and/or the side wall 115 of the vacuum chamber.

在本發明另一實施例中，延伸管線172可持續將非反應氣體輸送至反應空間12，並可調整非反應氣體的流量。具體而言，延伸管線172輸出非反應氣體的模式可包括攪動模式及一般模式，在攪動模式下延伸管線172輸出的非反應氣體的流量較大，並可以輸出的非反應氣體攪動反應空間12內的粉末121。在一般模式下延伸管線172輸出的非反應氣體的流量較小，可能無法攪動反應空間12內的粉末121，但在一般模式下輸出的非反應氣體會在延伸管線172的出風口1721形成正壓，以防止粉末121由出風口1721進入延伸管線172。 In another embodiment of the present invention, the extension pipeline 172 can continuously deliver the non-reactive gas to the reaction space 12 and can adjust the flow rate of the non-reactive gas. Specifically, the modes for outputting the non-reactive gas from the extension line 172 may include agitation mode and general mode. In the agitation mode, the flow rate of the non-reaction gas output by the extension line 172 is relatively large, and the output non-reaction gas can stir the reaction space 12 of powder 121. In general mode, the flow rate of the non-reactive gas output by the extension pipeline 172 is relatively small, and may not be able to stir the powder 121 in the reaction space 12, but in the normal mode, the output non-reactive gas will form a positive pressure at the air outlet 1721 of the extension pipeline 172 , to prevent the powder 121 from entering the extension pipeline 172 from the air outlet 1721 .

在本發明一實施例中，敲擊式粉末原子層沉積裝置10可包括一承載部191，用以承載驅動單元15、真空腔體11、軸封裝置13及/或敲擊裝置14。例如承載部191連接驅動單元15，並透過驅動單元15連接軸封裝置13及真空腔體11。此外軸封裝置13及/或真空腔體11亦可透過至少一支撐架193連接承載部191，以提高連接的穩定度。 In an embodiment of the present invention, the percussion-type powder atomic layer deposition device 10 may include a bearing part 191 for supporting the driving unit 15 , the vacuum chamber 11 , the shaft sealing device 13 and/or the percussion device 14 . For example, the bearing part 191 is connected to the driving unit 15 , and is connected to the shaft sealing device 13 and the vacuum cavity 11 through the driving unit 15 . In addition, the shaft sealing device 13 and/or the vacuum cavity 11 can also be connected to the bearing portion 191 through at least one support frame 193 to improve the stability of the connection.

如圖5及圖6所示，軸封裝置13及/或驅動單元15設置於承載部191，而敲擊裝置14可透過一位置調整機構195連接承載部191，例如敲擊裝置14透過一連接支架147連接位置調整機構195。 As shown in Figure 5 and Figure 6, the shaft sealing device 13 and/or the drive unit 15 are arranged on the bearing part 191, and the knocking device 14 can be connected to the bearing part 191 through a position adjustment mechanism 195, for example, the knocking device 14 is connected through a The bracket 147 is connected to the position adjustment mechanism 195 .

位置調整機構195，用以帶動敲擊裝置14相對於承載部191位移或轉動，以改變敲擊裝置14與真空腔體11的前壁111之間的距離及/或角度。 The position adjustment mechanism 195 is used to drive the knocking device 14 to displace or rotate relative to the bearing part 191 to change the distance and/or angle between the knocking device 14 and the front wall 111 of the vacuum chamber 11 .

此外，軸封裝置13的內管體133可由外管體131的容置空間132延伸至真空腔體11的反應空間12，使得內管體133在反應空間12內形成一凸出管部130。 In addition, the inner tube body 133 of the shaft sealing device 13 can extend from the accommodating space 132 of the outer tube body 131 to the reaction space 12 of the vacuum cavity 11 , so that the inner tube body 133 forms a protruding tube portion 130 in the reaction space 12 .

在本發明一實施例中，位置調整機構195可為滑軌，而敲擊裝置14可沿著滑軌相對於真空腔體11位移，以改變敲擊裝置14與真空腔體11之間的距離。在沉積過程中，敲擊裝置14可沿著滑軌位移並靠近真空腔體11的前壁111，使得敲擊裝置14可以敲擊真空腔體11的前壁111或側壁115，如圖5所示。在完成沉積製程後，如圖6所示，敲擊裝置14可沿著滑軌位移並遠離真空腔體11的前壁111，使得敲擊裝置14與真空腔體11的前壁111之間具有間隔，以利於將真空腔體11或蓋板117卸下，並取出真空腔體11內的粉末121。 In one embodiment of the present invention, the position adjustment mechanism 195 can be a slide rail, and the knocking device 14 can be displaced relative to the vacuum chamber 11 along the slide rail to change the distance between the knocking device 14 and the vacuum chamber 11 . During the deposition process, the knocking device 14 can be displaced along the slide rail and approach the front wall 111 of the vacuum chamber 11, so that the knocking device 14 can strike the front wall 111 or the side wall 115 of the vacuum chamber 11, as shown in FIG. 5 Show. After the deposition process is completed, as shown in FIG. 6 , the knocking device 14 can be displaced along the slide rail and away from the front wall 111 of the vacuum chamber 11, so that there is a gap between the knocking device 14 and the front wall 111 of the vacuum chamber 11. interval, so as to facilitate the unloading of the vacuum chamber 11 or the cover plate 117, and take out the powder 121 in the vacuum chamber 11.

在不同實施例中，位置調整機構195亦可以是一轉動裝置，敲擊裝置14可經由轉動裝置相對於真空腔體11轉動，例如敲擊裝置14可相對於真空腔體11進行水平或垂直方向的轉動，並遠離真空腔體11，使得敲擊裝置14不會位於卸下真空腔體11或蓋板117的路徑上。 In different embodiments, the position adjustment mechanism 195 can also be a rotating device, and the knocking device 14 can rotate relative to the vacuum cavity 11 through the rotating device, for example, the knocking device 14 can move horizontally or vertically relative to the vacuum cavity 11. Rotation, and away from the vacuum cavity 11, so that the knocking device 14 will not be located on the path of removing the vacuum cavity 11 or the cover plate 117.

以上所述者，僅為本發明之一較佳實施例而已，並非用來限定本發明實施之範圍，即凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。 The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of the present invention, that is, all changes and equal changes made according to the shape, structure, characteristics and spirit described in the patent scope of the present invention Modifications should be included in the patent application scope of the present invention.

11:真空腔體 11: Vacuum cavity

13:軸封裝置 13: Shaft seal device

14:敲擊裝置 14: Percussion device

15:驅動單元 15: Drive unit

16:加熱裝置 16: Heating device

191:承載部 191: bearing part

193:支撐架 193: support frame

Claims

一種敲擊式粉末原子層沉積裝置，包括：一真空腔體，包括一前壁、一後壁及一側壁，該前壁面對該後壁，且該前壁經由該側壁連接該後壁，其中該前壁、該後壁及該側壁形成一反應空間，該反應空間用以容置複數顆粉末；一軸封裝置，連接該真空腔體的該後壁，並包括一外管體及一內管體，其中該外管體具有一容置空間，用以容置該內管體；一驅動單元，連接該軸封裝置，並經由該軸封裝置的該外管體帶動該真空腔體轉動，而該內管體不會隨著該外管體轉動；至少一抽氣管線，位於該內管體內，流體連接該真空腔體的該反應空間，並用以抽出該反應空間內的一氣體；至少一進氣管線，位於該內管體內，流體連接該真空腔體的該反應空間，並用以將一前驅物輸送至該反應空間；及一敲擊裝置，與該真空腔體的該前壁相鄰，並用以敲擊該真空腔體的該前壁或該側壁。 A percussion type powder atomic layer deposition device, comprising: a vacuum chamber, including a front wall, a rear wall and a side wall, the front wall faces the rear wall, and the front wall is connected to the rear wall through the side wall, Wherein the front wall, the rear wall and the side wall form a reaction space, and the reaction space is used to accommodate a plurality of powders; a shaft sealing device is connected to the rear wall of the vacuum cavity, and includes an outer tube body and an inner tube A tube body, wherein the outer tube body has an accommodating space for accommodating the inner tube body; a driving unit is connected to the shaft sealing device and drives the vacuum cavity to rotate through the outer tube body of the shaft sealing device , and the inner tube body will not rotate with the outer tube body; at least one exhaust line is located in the inner tube body, fluidly connected to the reaction space of the vacuum chamber, and used to extract a gas in the reaction space; at least one gas inlet line, located in the inner tube, fluidly connected to the reaction space of the vacuum chamber, and used to deliver a precursor to the reaction space; and a percussion device, connected to the front wall of the vacuum chamber Adjacent, and used to strike the front wall or the side wall of the vacuum cavity.

如請求項1所述的敲擊式粉末原子層沉積裝置，其中該敲擊裝置包括一馬達及一敲擊部，該馬達連接該敲擊部，並驅動該敲擊部敲擊該真空腔體的該前壁或側壁。 The percussion type powder atomic layer deposition device as described in claim 1, wherein the percussion device includes a motor and a percussion part, the motor is connected to the percussion part, and drives the percussion part to strike the vacuum cavity the front or side wall of the

如請求項2所述的敲擊式粉末原子層沉積裝置，其中該敲擊裝置包括一緩衝部連接該敲擊部，該敲擊部經由該緩衝部敲擊該真空腔體的該前壁或該側壁。 The percussion type powder atomic layer deposition device as described in claim 2, wherein the percussion device includes a buffer part connected to the percussion part, and the percussion part percussion the front wall or the vacuum cavity via the buffer part the sidewall.

如請求項1所述的敲擊式粉末原子層沉積裝置，其中該進氣管線包括至少一非反應氣體輸送管線及至少一反應氣體輸送管線，該非反應氣體輸送管線用以將一非反應氣體輸送至該反應空間，以吹動該反應空間內的該粉末，而該反應氣體輸送管線則用以將該前驅物輸送至該反應空間。 The percussion type powder atomic layer deposition device as described in claim 1, wherein the gas inlet pipeline includes at least one non-reactive gas delivery pipeline and at least one reactive gas delivery pipeline, and the non-reactive gas delivery pipeline The delivery pipeline is used to deliver a non-reactive gas to the reaction space to blow the powder in the reaction space, and the reaction gas delivery pipeline is used to deliver the precursor to the reaction space.

如請求項4所述的敲擊式粉末原子層沉積裝置，其中該非反應氣體輸送管線包括一延伸管線，該延伸管線位於該反應空間內，並朝該真空腔體的該前壁的方向延伸。 The percussion powder atomic layer deposition apparatus as claimed in claim 4, wherein the non-reactive gas delivery pipeline includes an extension pipeline, the extension pipeline is located in the reaction space and extends toward the front wall of the vacuum chamber.

如請求項5所述的敲擊式粉末原子層沉積裝置，包括一過濾單元位於該內管體連接該反應空間的一端，該抽氣管線經由該過濾單元流體連接該反應空間，而該延伸管線穿過該過濾單元。 The percussion type powder atomic layer deposition device as described in claim item 5, comprising a filter unit located at the end of the inner pipe body connected to the reaction space, the suction line is fluidly connected to the reaction space through the filter unit, and the extension pipeline through the filter unit.

如請求項5所述的敲擊式粉末原子層沉積裝置，其中該延伸管線包括至少一出風口朝向該真空腔體的該前壁或該側壁的方向。 The percussion powder atomic layer deposition apparatus as claimed in claim 5, wherein the extension pipeline includes at least one air outlet facing the front wall or the side wall of the vacuum chamber.

如請求項1所述的敲擊式粉末原子層沉積裝置，其中該進氣管線用以將一非反應氣體輸送至該反應空間，並以該非反應氣體吹動該反應空間內的該粉末。 The percussion type powder atomic layer deposition apparatus as claimed in claim 1, wherein the gas inlet line is used to deliver a non-reactive gas to the reaction space, and blow the powder in the reaction space with the non-reactive gas.

如請求項1所述的敲擊式粉末原子層沉積裝置，其中該內管體由該外管體的該容置空間延伸至該真空腔體的該反應空間，並在該反應空間內形成一凸出管部。 The percussion type powder atomic layer deposition device as described in claim 1, wherein the inner tube extends from the accommodating space of the outer tube to the reaction space of the vacuum chamber, and forms a protruding tube.

如請求項1所述的敲擊式粉末原子層沉積裝置，包括一承載部及一位置調整機構，該軸封裝置及該驅動單元設置於該承載部上，而該敲擊裝置則透過該位置調整機構連接該承載部，並透過該位置調整機構帶動該敲擊裝置相對於該承載部位移或轉動，以改變該敲擊裝置與該真空腔體之間的間隔。 The percussion type powder atomic layer deposition device as described in claim 1 includes a bearing part and a position adjustment mechanism, the shaft sealing device and the driving unit are arranged on the bearing part, and the percussion device passes through the position The adjustment mechanism is connected to the bearing part, and through the position adjustment mechanism, the knocking device is driven to displace or rotate relative to the bearing part, so as to change the distance between the knocking device and the vacuum cavity.