CN115247255A - Knocking type powder atomic layer deposition device - Google Patents
Knocking type powder atomic layer deposition device Download PDFInfo
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- CN115247255A CN115247255A CN202110454078.0A CN202110454078A CN115247255A CN 115247255 A CN115247255 A CN 115247255A CN 202110454078 A CN202110454078 A CN 202110454078A CN 115247255 A CN115247255 A CN 115247255A
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- 239000000843 powder Substances 0.000 title claims abstract description 72
- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 34
- 239000002243 precursor Substances 0.000 claims abstract description 16
- 238000005086 pumping Methods 0.000 claims abstract description 10
- 238000010079 rubber tapping Methods 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 17
- 230000007246 mechanism Effects 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 4
- 238000000605 extraction Methods 0.000 claims description 4
- 239000012530 fluid Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 85
- 239000002096 quantum dot Substances 0.000 description 35
- 239000010409 thin film Substances 0.000 description 10
- 239000012495 reaction gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 238000001914 filtration Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
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- 238000013019 agitation Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 239000011261 inert gas Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4417—Methods specially adapted for coating powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
Abstract
The invention provides a knocking type powder atomic layer deposition device which mainly comprises a vacuum cavity, a shaft seal device, a driving unit and a knocking device. The driving unit is connected with the rear wall of the vacuum cavity through a shaft seal device and drives the vacuum cavity to rotate. The shaft seal device comprises an outer tube body and an inner tube body, wherein the inner tube body is arranged in the accommodating space of the outer tube body. At least one gas pumping line and at least one gas inlet line are positioned in the inner tube body, wherein the gas pumping line is used for pumping gas in the reaction space of the vacuum cavity body, and the gas inlet line is used for conveying a precursor to the reaction space. The knocking device is adjacent to the front wall of the vacuum cavity and used for knocking the front wall or the side wall of the vacuum cavity so as to prevent powder in the reaction space from being adhered to the inner surface of the vacuum cavity.
Description
Technical Field
The invention relates to a knocking type powder atomic layer deposition device which comprises a knocking device, wherein the knocking device is adjacent to the front wall of a vacuum cavity and is used for knocking the front wall or the side wall of the vacuum cavity so as to prevent powder in the vacuum cavity from being sticky.
Background
Nanoparticles (nanoparticles) are generally defined as particles smaller than 100 nm in at least one dimension, which are physically and chemically distinct from macroscopic materials. In general, the physical properties of macroscopic materials are independent of their size, but nanoparticles are not, and have potential applications in biomedical, optical, and electronic fields.
Quantum dots (Quantum dots) are nanoparticles of semiconductors, and the currently studied semiconductor materials are II-VI materials, such as ZnS, cdS, cdSe, etc., of which CdSe is the most drawing attention. The size of the quantum dot is usually between 2 and 50 nm, and after the quantum dot is irradiated by ultraviolet rays, electrons in the quantum dot absorb energy and transition from a valence band to a conduction band. The excited electrons release energy by luminescence when they return from the conduction band to the valence band.
The energy gap of the quantum dot is related to the size of the quantum dot, the larger the size of the quantum dot is, the smaller the energy gap is, the longer wavelength light can be emitted after irradiation, and the smaller the size of the quantum dot is, the larger the energy gap is, the shorter wavelength light can be emitted after irradiation. For example, 5 to 6 nm quantum dots emit orange or red light, while 2 to 3 nm quantum dots emit blue or green light, depending on the material composition of the quantum dots.
Light generated by a Light Emitting Diode (LED) using quantum dots can approach a continuous spectrum, and at the same time, has high color rendering properties, and is advantageous for improving the light emitting quality of the LED. In addition, the wavelength of the emitted light can be adjusted by changing the size of the quantum dots, so that the quantum dots become the development focus of a new generation of light-emitting devices and displays.
Although the quantum dots have the advantages and characteristics described above, the quantum dots are prone to agglomeration during application or manufacturing. In addition, the quantum dots have higher surface activity and are easy to react with air and water vapor, so that the service life of the quantum dots is shortened.
In particular, when quantum dots are made into a sealant of a light emitting diode, an agglomeration effect may be generated, thereby reducing the optical performance of the quantum dots. In addition, after the quantum dots are manufactured into the sealant of the light emitting diode, external oxygen or moisture may still penetrate through the sealant to contact the surfaces of the quantum dots, which may oxidize the quantum dots and affect the performance or service life of the quantum dots and the light emitting diode. Surface defects and dangling bonds (dangling bonds) of the quantum dots may also cause non-radiative recombination (non-radiative recombination), which also affects the luminous efficiency of the quantum dots.
At present, the quantum well structure is formed by forming a thin film with a thickness of nanometer on the surface of the quantum dot through Atomic Layer Deposition (ALD), or forming a plurality of thin films on the surface of the quantum dot.
The atomic layer deposition can form a thin film with uniform thickness on the substrate, can effectively control the thickness of the thin film, and is theoretically suitable for three-dimensional quantum dots. When the quantum dots are placed on the carrier plate, contact points exist between adjacent quantum dots, so that precursors for atomic layer deposition cannot contact the contact points, and a thin film with uniform thickness cannot be formed on the surfaces of all the nano-particles.
Disclosure of Invention
In order to solve the problems of the prior art, the invention provides a knocking type powder atomic layer deposition device, which mainly comprises a knocking device arranged on the front wall of a vacuum cavity, and the knocking device is used for knocking the front wall or the side wall of the vacuum cavity so as to shake off powder adhered to the inner surface of the vacuum cavity in the deposition process.
The invention provides a knocking type powder atomic layer deposition device, which mainly comprises a driving unit, a shaft sealing device, a vacuum cavity and a knocking device, wherein the driving unit is connected with a rear wall of the vacuum cavity through the shaft sealing device. The knocking device is adjacent to a front wall of the vacuum cavity and knocks the front wall or the side wall of the vacuum cavity to vibrate the inner surface of the vacuum cavity so as to remove powder stuck on the inner surface of the vacuum cavity.
Generally, during the atomic layer deposition of the powder, a uniform thin film may not be formed on the surface of the powder adhered to the vacuum chamber, which may affect the yield, lifetime and performance of the powder. Therefore, the invention provides that the front wall of the vacuum cavity is knocked by the knocking device so as to prevent powder from being adhered to the inner surface of the vacuum cavity.
In order to achieve the above object, the present invention provides a knocking type powder atomic layer deposition apparatus, including: a vacuum chamber including a front wall, a rear wall and a side wall, wherein the front wall faces the rear wall and is connected with the rear wall through the side wall, and the front wall, the rear wall and the side wall form a reaction space for containing a plurality of powders; a shaft sealing device connected with the rear side of the vacuum cavity and comprising an outer tube and an inner tube, wherein the outer tube is provided with a containing space for containing the inner tube; the driving unit is connected with the shaft sealing device and drives the vacuum cavity to rotate through the shaft sealing device; at least one gas extraction pipeline positioned in the inner pipe body, is in fluid connection with the reaction space of the vacuum cavity and is used for extracting gas in the reaction space; at least one gas inlet pipeline, which is positioned in the inner tube body, is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor to the reaction space; and a knocking device adjacent to the front wall of the vacuum chamber and used for knocking the front wall or the side wall of the vacuum chamber.
The knocking type powder atomic layer deposition device is characterized in that the knocking device comprises a motor and a knocking part, and the motor is connected with the knocking part and drives the knocking part to knock the front wall or the side wall of the vacuum cavity.
The knocking type powder atomic layer deposition device comprises a knocking part and a control part, wherein the knocking part is connected with the knocking part, and the knocking part knocks the front wall or the side wall of the vacuum cavity through the buffering part.
The knocking type powder atomic layer deposition device comprises a gas inlet pipeline and a gas outlet pipeline, wherein the gas inlet pipeline comprises at least one non-reaction gas conveying pipeline and at least one reaction gas conveying pipeline, the non-reaction gas conveying pipeline is used for conveying a non-reaction gas to the reaction space so as to blow powder in the reaction space, and the reaction gas conveying pipeline is used for conveying a precursor to the reaction space.
The knock-on powder atomic layer deposition apparatus may further include an extension line disposed in the reaction space and extending toward the front wall of the vacuum chamber.
The knocking type powder atomic layer deposition device comprises a filtering unit positioned at one end of an inner pipe body connected with a reaction space, an air exhaust pipeline is in fluid connection with the reaction space through the filtering unit, and an extension pipeline penetrates through the filtering unit.
The knocking type powder atomic layer deposition device is characterized in that the extension pipeline comprises at least one air outlet facing to the direction of the front wall or the side wall of the vacuum cavity.
The knocking type powder atomic layer deposition device is characterized in that the gas inlet pipeline is used for conveying a non-reaction gas to the reaction space and blowing the powder in the reaction space by the non-reaction gas.
The knocking type powder atomic layer deposition device is characterized in that the inner pipe body extends from the accommodating space of the outer pipe body to the reaction space of the vacuum cavity body, and a protruding pipe part is formed in the reaction space.
The knocking type powder atomic layer deposition device comprises a bearing part and a position adjusting mechanism, wherein the shaft seal device and the driving unit are arranged on the bearing part, the knocking device is connected with the bearing part through the position adjusting mechanism, and the knocking device is driven to move or rotate relative to the bearing part through the position adjusting mechanism so as to change the interval between the knocking device and the vacuum cavity.
The invention has the beneficial effects that: the utility model provides a novel strike formula powder atomic layer deposition device, it sets up a knocking device mainly at vacuum cavity's antetheca to strike vacuum cavity's antetheca or lateral wall through knocking device, with be stained with the powder shake on vacuum cavity's internal surface that glues in the deposition process.
Drawings
FIG. 1 is a schematic perspective view of a knocking type atomic layer deposition device according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of an apparatus for knock-on atomic layer deposition of powders according to an embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view of a shaft sealing device of a knocked-down powder atomic layer deposition device according to an embodiment of the present invention.
FIG. 4 is a schematic cross-sectional view of another embodiment of the knocked-down powder atomic layer deposition apparatus of the present invention.
FIG. 5 is a schematic cross-sectional view of another embodiment of the knocked-down atomic layer powder deposition apparatus of the present invention.
FIG. 6 is a schematic cross-sectional view of another embodiment of the knocked-down atomic layer powder deposition apparatus of the present invention.
Description of reference numerals: 10-a knock-on powder atomic layer deposition apparatus; 11-vacuum chamber; 111-front wall; 113-rear wall; 115-side walls; 117-cover plate; 119-a cavity; 12-a reaction space; 121-powder; 13-a shaft seal device; 130-a protruding tube portion; 131-an outer body; 132-a containing space; 133-an inner tube; 134-a connection space; 139-a filtration unit; 14-a rapping device; 141-a motor; 143-a knock section; 145-a buffer; 147-a connecting bracket; 15-a drive unit; 16-a heating device; 171-a suction line; 172-extension line; 1721-air outlet; 173-an air intake line; 175-non-reactive gas delivery line; 177-a heater; 179-temperature sensing unit; 191-a carrier; 193-a support; 195-a position adjustment mechanism.
Detailed Description
Referring to fig. 1, fig. 2 and fig. 3, a schematic perspective view, a schematic cross-sectional view and a schematic cross-sectional view of a shaft sealing device of an embodiment of the knocking type powder atomic layer deposition device according to the invention are respectively shown. As shown in the figure, the knocking type powder atomic layer deposition apparatus 10 mainly includes a vacuum chamber 11, a shaft seal device 13, a driving unit 15 and a knocking device 14, wherein the driving unit 15 is connected to the vacuum chamber 11 through the shaft seal device 13 and drives the vacuum chamber 11 to rotate.
The vacuum chamber 11 includes a front wall 111, a rear wall 113 and a side wall 115, wherein the front wall 111 faces the rear wall 113, and the side wall 115 is located between the front wall 111 and the rear wall 113 and connects the front wall 111 and the rear wall 113 to form a reaction space 12 between the front wall 111, the rear wall 113 and the side wall 115.
The reaction space 12 is used for accommodating a plurality of powders 121, wherein the powders 121 may be Quantum dots (Quantum dots), such as ZnS, cdS, cdSe, and other II-VI semiconductor materials, and the thin film formed on the Quantum dots may be aluminum oxide (Al 2O 3). In one embodiment of the present invention, the vacuum chamber 11 may include a cover 117 and a chamber 119, wherein the cover 117 is used to cover and connect with the chamber 119 to form the reaction space 12 therebetween. The lid 117 may be the front wall 111 of the vacuum chamber 11, while the chamber 119 is formed by the rear wall 113 and the side walls 115 of the vacuum chamber 11.
The shaft seal device 13 is connected to the rear wall 113 of the vacuum chamber 11 and includes an outer tube 131 and an inner tube 133, wherein the outer tube 131 has an accommodating space 132, and the inner tube 133 has a connecting space 134, for example, the outer tube 131 and the inner tube 133 may be hollow cylinders. The accommodating space 132 of the outer tube 131 is used for accommodating the inner tube 133, wherein the outer tube 131 and the inner tube 133 are coaxially disposed. The shaft seal device 13 can be a common shaft seal or a magnetic fluid shaft seal, and is mainly used to isolate the reaction space 12 of the vacuum chamber 11 from the external space to maintain the vacuum of the reaction space 12.
The drive unit 15 is connected to one end of the shaft sealing device 13, and the other end of the shaft sealing device 13 is connected to the rear wall 113 of the vacuum chamber 11. The driving unit 15 drives the vacuum chamber 11 to rotate through the shaft sealing device 13, for example, the driving unit 15 is a motor, and is connected to the rear wall 113 of the vacuum chamber 11 through the outer tube 131, and drives the vacuum chamber 11 to rotate through the outer tube 131. In addition, the driving unit 15 is not connected to the inner tube 133, so that the inner tube 133 does not rotate when the driving unit 15 drives the outer tube 131 and the vacuum chamber 11 to rotate.
The driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate continuously in the same direction, for example, clockwise or counterclockwise. In various embodiments, the driving unit 15 can drive the outer tube 131 and the vacuum chamber 11 to rotate clockwise by a specific angle and then rotate counterclockwise by a specific angle, for example, the specific angle can be 360 degrees. The vacuum chamber 11 stirs the powder 121 in the reaction space 12 during rotation, so that the powder 121 is uniformly heated and contacts with the precursor or the non-reactive gas.
At least one gas suction line 171, at least one gas inlet line 173, at least one non-reactive gas delivery line 175, a heater 177 and/or a temperature sensing unit 179 may be disposed in the connection space 134 of the inner pipe 133, as shown in fig. 2 and 3.
The gas pumping line 171 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used for pumping out the gas in the reaction space 12, so that the reaction space 12 is in a vacuum state for performing the atomic layer deposition process. Specifically, the gas exhaust line 171 may be connected to a pump, and the gas in the reaction space 12 is exhausted by the pump.
The gas inlet line 173 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is configured to deliver a precursor and/or a non-reactive gas to the reaction space 12, wherein the non-reactive gas may be an inert gas such as nitrogen or argon. In practice, the gas inlet line 173 may deliver a carrier gas (carrier gas) and the precursor into the reaction space 12. The gas inlet line 173 may also deliver non-reactive gases into the reaction space 12 and evacuate the gas through the gas evacuation line 171 to remove the precursors from the reaction space 12. In one embodiment of the present invention, the gas inlet line 173 may be connected to a plurality of branch lines, and may sequentially deliver different precursors into the reaction space 12 through each branch line.
The gas inlet line 173 may increase the flow rate of the non-reactive gas supplied to the reaction space 12 and blow the powder 121 in the reaction space 12 by the non-reactive gas so that the powder 121 is diffused to various regions of the reaction space 12 by the non-reactive gas.
In one embodiment of the present invention, the gas inlet line 173 may include at least one non-reactive gas delivery line 175 and at least one reactive gas delivery line. The non-reactive gas delivery line 175 is fluidly connected to the reaction space 12 of the vacuum chamber 11 and is used to deliver a non-reactive gas to the reaction space 12. The non-reactive gas is used to blow the powder 121 in the reaction space 12, and the driving unit 15 is used to drive the vacuum chamber 11 to rotate, so as to effectively and uniformly stir the powder 121 in the reaction space 12 and deposit a thin film with uniform thickness on the surface of each powder 121. The reactant gas delivery line is fluidly connected to the reaction space 12 and is configured to deliver the precursors to the reaction space 12.
The vacuum chamber 11 is driven to rotate by the driving unit 15 via the shaft sealing device 13 and the non-reactive gas is delivered to the reaction space 12 through the gas inlet line 173, although the powder 121 in the reaction space 12 may be stirred. However, in practical applications, a certain amount of the powder 121 may stick to the inner surface of the vacuum chamber 11, so that the precursor transported to the reaction space 12 cannot contact the powder 121 sticking to the vacuum chamber 11, and a thin film with a uniform thickness cannot be formed on all the surfaces of the powder 121.
In order to solve the above-mentioned problems and the problems encountered in the prior art, the present invention proposes to provide a tapping device 14 at a side of the front wall 111 of the vacuum chamber 11, wherein the tapping device 14 is adjacent to the front wall 111 of the vacuum chamber 11 and is used for tapping the front wall 111 or the side wall 115 of the vacuum chamber 11.
When the tapping device 14 taps the front wall 111 or the side wall 115 of the vacuum chamber 11, the vacuum chamber 11 vibrates, so that the sticky powder 121 leaves the inner surface of the vacuum chamber 11 and is scattered in the reaction space 12 of the vacuum chamber 11.
Specifically, the driving unit 15, the air inlet line 173 and the knocking device 14 are arranged to effectively solve the problem that the powder 121 is stuck to the vacuum chamber 11, and to facilitate the formation of a thin film with a uniform thickness on the surface of most of the powder 121.
In an embodiment of the present invention, the knocking device 14 includes a motor 141 and a knocking portion 143, wherein the motor 141 is connected to and drives the knocking portion 143 to knock the front wall 111 or the side wall 115 of the vacuum chamber 11. In addition, a buffer portion 145 may be disposed on the striking portion 143, wherein the striking portion 143 strikes the front wall 111 or the sidewall 115 of the vacuum chamber 11 through the buffer portion 145 to prevent damage to the vacuum chamber 11 and/or the striking device 14 during striking the vacuum chamber 11, for example, the buffer portion 145 may be a rubber pad.
The gas inlet line 173 and the non-reactive gas delivery line 175 of the knock-on powder ald apparatus 10 are used to deliver non-reactive gas to the reaction space 12, wherein the gas inlet line 173 delivers a smaller flow of non-reactive gas to remove the precursor in the reaction space 12, and the non-reactive gas delivery line 175 delivers a larger flow of non-reactive gas to blow the powder 121 in the reaction space 12.
Specifically, the gas inlet line 173 and the non-reactive gas transfer line 175 may transfer the non-reactive gas to the reaction space 12 at different time points, so that the non-reactive gas transfer line 175 may not be provided in practical applications, and the flow rate of the non-reactive gas transferred by the gas inlet line 173 at different time points may be adjusted. When the precursor in the reaction space 12 is to be removed, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is reduced, and when the powder 121 in the reaction space 12 is to be blown, the flow rate of the non-reactive gas delivered to the reaction space 12 by the gas inlet line 173 is increased.
When the driving unit 15 of the present invention drives the outer tube 131 and the vacuum chamber 11 to rotate, the inner tube 133, the pumping line 171, the gas inlet line 173, and/or the non-reactive gas delivery line 175 therein do not rotate, which is beneficial to improving the stability of the non-reactive gas and/or precursor delivered to the reaction space 12 by the gas inlet line 173 and/or the non-reactive gas delivery line 175.
The heater 177 is used for heating the connection space 134 and the inner tube 133, and heating the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175 in the inner tube 133 to increase the temperature of the gas in the pumping line 171, the gas inlet line 173 and/or the non-reactive gas transporting line 175. The temperature sensing unit 179 is used to measure the temperature of the heater 177 or the connection space 134 to obtain the operating status of the heater 177. Another heating device 16 is typically disposed inside, outside or around the vacuum chamber 11, wherein the heating device 16 is adjacent to or in contact with the sidewall 115 of the vacuum chamber 11 and is used to heat the vacuum chamber 11 and the reaction space 12.
A filter unit 139 may be disposed at one end of the inner pipe 133 connected to the reaction space 12, wherein the pumping line 171, the gas inlet line 173 and/or the non-reactive gas delivery line 175 in the inner pipe 133 are fluidly connected to the reaction space 12 of the vacuum chamber 11 via the filter unit 139.
The gas extraction line 171 is connected to the reaction space 12 through the filter unit 139, so that the powder 121 in the reaction space 12 can be prevented from being extracted together when the gas extraction line 171 extracts the gas in the reaction space 12, and the loss of the powder 121 can be reduced.
In an embodiment of the present invention, as shown in fig. 4, the gas inlet line 173 and/or the non-reactive gas delivery line 175 may extend from the connecting space 134 of the inner tube 133 of the shaft sealing device 13 to the reaction space 12 of the vacuum chamber 11, wherein the gas inlet line 173 and/or the non-reactive gas delivery line 175 extending to the reaction space 12 may be defined as an extending line 172. The extension line 172 may pass through the filter unit 139 and extend to the reaction space 12.
In one embodiment of the present invention, the gas inlet 173, the non-reactive gas delivery 175 and/or the extension 172 are disposed in the reaction space 12 and extend toward the front wall 111 of the vacuum chamber 11. In various embodiments, the gas inlet line 173, the non-reactive gas delivery line 175 and/or the extension line 172 located in the reaction space 12 may also be bent and extended toward the side wall 115 and/or the rear wall 113 of the vacuum chamber 11. The extension line 172 may further include at least one outlet 1721, wherein the outlet 1721 faces the front wall 111 and/or the sidewall 115 of the vacuum chamber.
In another embodiment of the present invention, the extension line 172 may continuously supply the non-reactive gas to the reaction space 12, and may adjust the flow rate of the non-reactive gas. Specifically, the mode in which the extension line 172 outputs the non-reactive gas may include an agitation mode in which the flow rate of the non-reactive gas output from the extension line 172 is large and the powder 121 in the reaction space 12 may be agitated by the output non-reactive gas, and a general mode. The flow rate of the non-reactive gas output from the extension line 172 in the normal mode is small, and the powder 121 in the reaction space 12 may not be agitated, but the non-reactive gas output in the normal mode forms a positive pressure at the air outlet 1721 of the extension line 172 to prevent the powder 121 from entering the extension line 172 through the air outlet 1721.
In an embodiment of the invention, the knocked-down atomic layer powder deposition apparatus 10 may include a carrying portion 191 for carrying the driving unit 15, the vacuum chamber 11, the shaft sealing device 13 and/or the knocking device 14. For example, the bearing portion 191 is connected to the driving unit 15, and the sealing device 13 and the vacuum chamber 11 are connected by the driving unit 15. In addition, the shaft seal device 13 and/or the vacuum chamber 11 can be connected to the bearing portion 191 through at least one support frame 193 to improve the stability of the connection.
As shown in fig. 5 and 6, the shaft seal device 13 and/or the driving unit 15 are disposed on the supporting portion 191, and the tapping device 14 can be connected to the supporting portion 191 through a position adjusting mechanism 195, for example, the tapping device 14 can be connected to the position adjusting mechanism 195 through a connecting bracket 147.
The position adjusting mechanism 195 is used to drive the knocking device 14 to displace or rotate relative to the carrying portion 191, so as to change the distance and/or angle between the knocking device 14 and the front wall 111 of the vacuum chamber 11.
In addition, the inner tube 133 of the shaft sealing device 13 can extend from the accommodating space 132 of the outer tube 131 to the reaction space 12 of the vacuum chamber 11, so that the inner tube 133 forms a protruding tube 130 in the reaction space 12.
In one embodiment of the present invention, the position adjusting mechanism 195 may be a slide rail, and the tapping device 14 may be displaced along the slide rail relative to the vacuum chamber 11 to change the distance between the tapping device 14 and the vacuum chamber 11. During the deposition process, the tapping device 14 is displaceable along the slide rail and close to the front wall 111 of the vacuum chamber 11, so that the tapping device 14 can tap the front wall 111 or the side walls 115 of the vacuum chamber 11, as shown in fig. 5. After the deposition process is completed, as shown in fig. 6, the knocking device 14 may be displaced along the slide rail and away from the front wall 111 of the vacuum chamber 11, so that a space is formed between the knocking device 14 and the front wall 111 of the vacuum chamber 11, so as to facilitate the detachment of the vacuum chamber 11 or the cover plate 117 and the removal of the powder 121 from the vacuum chamber 11.
In various embodiments, the position adjusting mechanism 195 may also be a rotating device, and the tapping device 14 can rotate relative to the vacuum chamber 11 via the rotating device, for example, the tapping device 14 can rotate horizontally or vertically relative to the vacuum chamber 11 and away from the vacuum chamber 11, so that the tapping device 14 is not located on the path for detaching the vacuum chamber 11 or the cover plate 117.
The invention has the advantages that:
the utility model provides a novel strike formula powder atomic layer deposition device, mainly set up a rapping device at vacuum chamber's antetheca to strike vacuum chamber's antetheca or lateral wall through the rapping device, with the powder shake fall on being stained with the internal surface that glues at vacuum chamber in the deposition process.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, i.e., all equivalent variations and modifications in the shape, structure, characteristics and spirit of the present invention described in the claims should be included in the scope of the present invention.
Claims (10)
1. A knock-on powder atomic layer deposition apparatus, comprising:
a vacuum chamber including a front wall, a rear wall and a side wall, wherein the front wall faces the rear wall and is connected to the rear wall via the side wall, and a reaction space is formed by the front wall, the rear wall and the side wall and is used for accommodating a plurality of powders;
a shaft sealing device connected with the rear side of the vacuum cavity and comprising an outer tube and an inner tube, wherein the outer tube is provided with a containing space for containing the inner tube;
a driving unit connected to the shaft seal device and driving the vacuum chamber to rotate via the shaft seal device;
at least one gas extraction line positioned in the inner tube body, fluidly connected to the reaction space of the vacuum chamber, and used for extracting a gas in the reaction space;
at least one gas inlet pipeline, which is positioned in the inner tube body, is in fluid connection with the reaction space of the vacuum cavity and is used for conveying a precursor to the reaction space; and
and the knocking device is adjacent to the front wall of the vacuum cavity and is used for knocking the front wall or the side wall of the vacuum cavity.
2. The apparatus of claim 1, wherein the tapping device comprises a motor and a tapping portion, the motor is connected to the tapping portion and drives the tapping portion to tap the front wall or the side wall of the vacuum chamber.
3. The knocked powder atomic layer deposition apparatus according to claim 2, wherein the knocking device comprises a buffer portion connected to the knocking portion, and the knocking portion knocks the front wall or the side wall of the vacuum chamber through the buffer portion.
4. The apparatus of claim 1, wherein the gas inlet line comprises at least one non-reactive gas delivery line for delivering a non-reactive gas to the reaction space to blow the powder therein and at least one reactive gas delivery line for delivering the precursor to the reaction space.
5. The apparatus of claim 4, wherein the non-reactive gas delivery line comprises an extension line extending in the direction of the front wall of the vacuum chamber and located in the reaction space.
6. The apparatus of claim 5, wherein a filter unit is disposed at an end of the inner tube fluidly connected to the reaction space, the pumping line is fluidly connected to the reaction space via the filter unit, and the extension line passes through the filter unit.
7. The apparatus of claim 5, wherein the extension line comprises at least one outlet opening oriented towards the front wall or the side wall of the vacuum chamber.
8. The apparatus of claim 1, wherein the gas inlet line is configured to deliver a non-reactive gas to the reaction space and blow the powder in the reaction space with the non-reactive gas.
9. The apparatus of claim 1, wherein the inner tube extends from the receiving space of the outer tube to the reaction space of the vacuum chamber, and a protruding tube is formed in the reaction space.
10. The knocking type atomic layer deposition device for powder of claim 1, comprising a carrying portion and a position adjusting mechanism, wherein the shaft sealing device and the driving unit are disposed on the carrying portion, and the knocking device is connected to the carrying portion through the position adjusting mechanism and drives the knocking device to move or rotate relative to the carrying portion through the position adjusting mechanism, so as to change a gap between the knocking device and the vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110454078.0A CN115247255A (en) | 2021-04-26 | 2021-04-26 | Knocking type powder atomic layer deposition device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110454078.0A CN115247255A (en) | 2021-04-26 | 2021-04-26 | Knocking type powder atomic layer deposition device |
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| CN115247255A true CN115247255A (en) | 2022-10-28 |
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| TWM610395U (en) * | 2020-12-01 | 2021-04-11 | 天虹科技股份有限公司 | Powder atomic layer deposition device for preventing powder sticking |
| CN215251162U (en) * | 2021-04-26 | 2021-12-21 | 鑫天虹(厦门)科技有限公司 | Powder atomic layer deposition device with knocking unit |
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- 2021-04-26 CN CN202110454078.0A patent/CN115247255A/en active Pending
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| US9951419B2 (en) * | 2011-09-03 | 2018-04-24 | Ying-Bing JIANG | Apparatus and method for making atomic layer deposition on fine powders |
| CN107502873A (en) * | 2017-09-30 | 2017-12-22 | 华中科技大学无锡研究院 | A kind of powder coats apparatus for atomic layer deposition |
| US20200024736A1 (en) * | 2018-07-19 | 2020-01-23 | Kaushal Gangakhedkar | Particle Coating Methods and Apparatus |
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