TWI773618B - Mask sheet for qfn semiconductor package - Google Patents

Mask sheet for qfn semiconductor package Download PDF

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TWI773618B
TWI773618B TW110148989A TW110148989A TWI773618B TW I773618 B TWI773618 B TW I773618B TW 110148989 A TW110148989 A TW 110148989A TW 110148989 A TW110148989 A TW 110148989A TW I773618 B TWI773618 B TW I773618B
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mask sheet
semiconductor package
adhesive layer
lead frame
layer
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TW110148989A
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Chinese (zh)
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TW202226472A (en
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尹勤泳
崔裁原
趙炯睃
趙泳奭
金曉臨
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韓商利諾士尖端材料有限公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/29—Laminated material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49586—Insulating layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/89—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/16—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the structure of the carrier layer

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Materials For Photolithography (AREA)
  • Medical Preparation Storing Or Oral Administration Devices (AREA)

Abstract

本發明涉及四側無引腳扁平（QFN）半導體封裝用遮罩片。本發明的四側無引腳扁平半導體封裝用遮罩片包括：支撐膜；黏結層，位於該支撐膜的一面；以及加強層，位於該支撐膜的該黏結層所處的面的背面，相對於該黏結層的該加強層的滑動摩擦力為700gf/50mm以下，因此，即使長時間捲繞保管也不會產生氣泡或皺褶。The present invention relates to a mask sheet for a quad flat no-lead (QFN) semiconductor package. The mask sheet for a four-side leadless flat semiconductor package of the present invention includes: a support film; an adhesive layer, located on one side of the support film; The sliding frictional force of the reinforcing layer on the adhesive layer is 700 gf/50 mm or less, so even if it is wound and stored for a long time, air bubbles and wrinkles will not be generated.

Description

四側無引腳扁平半導體封裝用遮罩片Mask sheet for 4-side leadless flat semiconductor package

本發明涉及四側無引腳扁平（QFN，Quad Flat Non-leaded）半導體封裝用遮罩片，並且，涉及利用四側無引腳扁平（QFN，Quad Flat Non-leaded）半導體封裝用遮罩片的引腳框架及半導體封裝。The present invention relates to a mask sheet for a quad flat non-leaded (QFN) semiconductor package, and also to a mask sheet for a semiconductor package using a quad flat non-leaded (QFN, Quad Flat Non-leaded). lead frames and semiconductor packages.

迄今為止，在個人電腦的發展趨勢下，半導體技術主要側重於半導體電路的積體化，最近，基於行動設備（Mobile）所需的電子部件的輕薄小型化趨勢，當前半導體技術正以小型化和薄型化的方式提高半導體封裝的積體度，因此，半導體裝置的製造工序也持續產生變化。So far, with the development trend of personal computers, semiconductor technology has mainly focused on the integration of semiconductor circuits. Recently, based on the trend of thinning and miniaturization of electronic components required for mobile devices (Mobile), the current semiconductor technology is being reduced in size and size. As the thickness reduction method increases the degree of integration of the semiconductor package, the manufacturing process of the semiconductor device continues to change.

作為一例，預計由四側無引腳扁平、Stacked CSP、WLP、Flip Chip Bare Die、Fine-Pitch BGA、MCP、MIS package等輕薄小型及高附加值的封裝技術主導未來市場。As an example, it is expected that the future market will be dominated by thin, small, and high value-added packaging technologies such as four-side flat without leads, Stacked CSP, WLP, Flip Chip Bare Die, Fine-Pitch BGA, MCP, and MIS package.

其中，四側無引腳扁平封裝（QFN，Quad Flat Non-lead Package）作為晶片級封裝（CSP，Chip Scale Package）的一種，因其尺寸小而能夠減少基板上的連接面積並實現大量的裝載量，最終具有使板空間最大化的效果，在其結構層面上，在下部暴露電連接部的狀態下，由於必須實現封裝工序，因此，在製造工序中必需進行利用遮罩片遮蔽暴露部位的工序。Among them, Quad Flat Non-lead Package (QFN, Quad Flat Non-lead Package) is a kind of Chip Scale Package (CSP, Chip Scale Package), because of its small size, it can reduce the connection area on the substrate and realize a large number of loading In the end, it has the effect of maximizing the board space. On the structural level, in the state where the electrical connection part is exposed at the lower part, since the packaging process must be implemented, it is necessary to use a mask sheet to cover the exposed part in the manufacturing process. process.

這種四側無引腳扁平半導體封裝的製造方法包括以下順序。The manufacturing method of this four-side leadless flat semiconductor package includes the following sequence.

首先，在引腳框架的一側面附著遮罩片後，在形成於引腳框架上的半導體器件裝載部（裸片墊或引腳板）單獨裝載半導體晶片。First, after attaching a mask sheet to one side of the lead frame, a semiconductor wafer is individually mounted on a semiconductor device mounting portion (die pad or lead board) formed on the lead frame.

而且，在對引腳框架進行等離子處理後，通過半導體打線接合金屬線來使得排列在引腳框架的各個半導體晶片裝載部周圍的引腳與半導體晶片電連接。Also, after the lead frame is subjected to plasma treatment, the pins arranged around the respective semiconductor wafer mounting portions of the lead frame are electrically connected to the semiconductor wafer by semiconductor wire bonding.

接著，使用密封樹脂對裝載於引腳框架的上述半導體晶片進行密封。Next, the above-mentioned semiconductor wafer mounted on the lead frame is sealed with a sealing resin.

從引腳框架剝離遮罩片來形成排列有四側無引腳扁平封裝的四側無引腳扁平單元。The mask sheet is peeled off from the lead frame to form a quad flat cell arranged with a quad flat pack.

沿著各個四側無引腳扁平封裝的外周切割（Sawing）四側無引腳扁平單元來製造單個四側無引腳扁平半導體封裝。A single quad flat semiconductor package is fabricated by Sawing quad flat cells along the perimeter of each quad flat package.

像這樣，在四側無引腳扁平半導體封裝的製造過程中必需使用遮罩片，因此，上述遮罩片應具備能夠承受在四側無引腳扁平半導體封裝的製造過程中產生的高溫和等離子處理過程的物性。As such, it is necessary to use a mask sheet in the manufacturing process of the 4-side no-lead flat semiconductor package, and therefore, the above-mentioned mask sheet should be capable of withstanding the high temperature and plasma generated during the manufacturing process of the 4-side no-lead flat semiconductor package. The physical properties of the treatment process.

不僅如此，上述遮罩片普遍以捲繞方式長時間保管。當捲繞遮罩片時，黏結層和支撐膜應以相互滑動（slip）的方式實現順暢的捲繞，只有這樣才能夠在長時間保管的前提下也不會導致遮罩片的物性降低。但是，在利用形成有加強層的支撐膜的遮罩片的情況下，當捲繞遮罩片時，黏結層和加強層因具有黏結的性質而無法相互滑動，從而導致在遮罩片產生氣泡或皺褶。Not only that, the above-mentioned mask sheet is generally stored for a long time by winding. When winding the mask sheet, the adhesive layer and the support film should be smoothly wound by slipping with each other. Only in this way can the physical properties of the mask sheet not be degraded under the premise of long-term storage. However, in the case of a mask sheet using a support film formed with a reinforcing layer, when the mask sheet is wound, the adhesive layer and the reinforcing layer cannot slide with each other due to their adhesive properties, resulting in the generation of air bubbles in the mask sheet. or folds.

因此，當前需要如下所述的四側無引腳扁平半導體封裝用遮罩片，即，不僅具備能夠承受在用於四側無引腳扁平半導體封裝的製造工序中產生的高溫和等離子處理過程的物性，而且，在長時間捲繞保管的情況下，防止耐久性及物性產生劣化。Therefore, there is currently a need for a mask sheet for 4-side no-lead flat semiconductor packages that not only has the ability to withstand the high temperatures and plasma processing processes that occur in the manufacturing process for the 4-side no-lead flat semiconductor package In addition, in the case of winding storage for a long time, the durability and physical properties are prevented from being deteriorated.

發明所欲解決之問題The problem that the invention seeks to solve

為了解決如上所述的技術問題，本發明的目的在於，提供如下的四側無引腳扁平半導體封裝用遮罩片，即，在黏結層與加強層之間存在滑動性。In order to solve the above-mentioned technical problems, an object of the present invention is to provide a mask sheet for a four-side no-lead flat semiconductor package in which sliding properties exist between the adhesive layer and the reinforcement layer.

並且，本發明的再一目的在於，提供如下的四側無引腳扁平半導體封裝用遮罩片，即，具備能夠承受在用於四側無引腳扁平半導體封裝的製造工序中產生的高溫和等離子處理過程的物性。Still another object of the present invention is to provide a mask sheet for a four-side no-lead flat semiconductor package which is capable of withstanding high temperature and high temperature generated in a manufacturing process for a four-side no-lead flat semiconductor package. Physical properties of the plasma treatment process.

並且，本發明的另一目的在於，提供包括上述遮罩片的引腳框架和四側無引腳扁平半導體封裝。Also, another object of the present invention is to provide a lead frame and a four-side leadless flat semiconductor package including the above-mentioned mask sheet.

解決問題之技術手段technical means to solve problems

用於實現上述目的的本發明的四側無引腳扁平半導體封裝用遮罩片的特徵在於，包括：支撐膜；黏結層，位於上述支撐膜的一面；以及加強層，位於上述支撐膜的上述黏結層所處的面的背面，相對於上述黏結層的上述加強層的滑動摩擦力為700gf/50mm以下。The mask sheet for a four-side leadless flat semiconductor package of the present invention for achieving the above object is characterized by comprising: a support film; an adhesive layer on one side of the support film; The back surface of the surface on which the adhesive layer is located has a sliding friction force of the reinforcing layer with respect to the adhesive layer of 700 gf/50 mm or less.

對照先前技術之功效Efficacy compared to prior art

本發明的四側無引腳扁平半導體封裝用遮罩片具有如下的優秀效果，即，由於上述黏結層和加強層的滑動性得到改善，因此，即使在長時間捲繞保管的情況下，遮罩片的耐久性或物性也不會產生劣化。The mask sheet for a four-side leadless flat semiconductor package of the present invention has an excellent effect that, since the sliding properties of the above-mentioned adhesive layer and the reinforcing layer are improved, even in the case of being wound and stored for a long time, the mask sheet The durability and physical properties of the cover sheet are not deteriorated.

並且，本發明的四側無引腳扁平半導體封裝用遮罩片還具有如下的優秀效果，即，即使在四側無引腳扁平半導體封裝的製造工序中產生的高溫和等離子處理過程中，物性也不會產生劣化。In addition, the mask sheet for 4-side no-lead flat semiconductor package of the present invention also has the excellent effect that the physical properties of the 4-side no-lead flat semiconductor package are produced at high temperatures and during plasma treatment during the manufacturing process. There is also no deterioration.

以下，將詳細說明上述目的、特徵及優點，由此，本發明所屬技術領域具有通常知識者所屬技術領域具有通常知識者可輕鬆實施本發明的技術思想。在說明本發明的過程中，當判斷對於本發明相關習知技術的具體說明有可能不必要地混淆本發明的主旨時，將省略詳細說明。以下，詳細說明本發明的較佳實施例。Hereinafter, the above-mentioned objects, features, and advantages will be described in detail, so that those skilled in the art to which the present invention belongs can easily implement the technical idea of the present invention. During the description of the present invention, when it is judged that the specific description of the prior art related to the present invention may unnecessarily obscure the gist of the present invention, the detailed description will be omitted. Hereinafter, preferred embodiments of the present invention will be described in detail.

本發明並不限定於以下公開的實施例，可通過不同實施方式實現，但是，本實施例用於本發明的公開變得完整，使得本發明所屬技術領域具有通常知識者能夠完全理解本發明的範疇。The present invention is not limited to the embodiments disclosed below, and can be implemented through different implementations. However, this embodiment is used to complete the disclosure of the present invention, so that those with ordinary knowledge in the technical field to which the present invention belongs can fully understand the present invention. category.

以下，詳細說明本發明的四側無引腳扁平半導體封裝用遮罩片及包括其的引腳框架和半導體封裝。Hereinafter, the mask sheet for a four-side leadless flat semiconductor package of the present invention, a lead frame and a semiconductor package including the same will be described in detail.

四側無引腳扁平半導體封裝用遮罩片Mask sheet for 4-side leadless flat semiconductor package

參照圖1，本發明的四側無引腳扁平半導體封裝用遮罩片100為層疊結構，其包括：支撐膜10；黏結層20，位於上述支撐膜10的一面；以及加強層30，位於上述支撐膜的上述黏結層所處的面的背面。並且，上述層疊結構直接應用於半導體封裝。Referring to FIG. 1 , the mask sheet 100 for a four-side leadless flat semiconductor package of the present invention is a laminated structure, which includes: a support film 10; an adhesive layer 20 on one side of the support film 10; and a reinforcement layer 30 on the above The back side of the side where the above-mentioned adhesive layer of the support film is located. Also, the above-described laminated structure is directly applied to a semiconductor package.

尤其，在本發明的四側無引腳扁平半導體封裝用遮罩片100中，相對於上述黏結層20的加強層30的滑動摩擦力為700gf/50mm以下。In particular, in the mask sheet 100 for a four-side no-lead flat semiconductor package of the present invention, the sliding friction force of the reinforcing layer 30 with respect to the adhesive layer 20 is 700 gf/50 mm or less.

其中，上述滑動摩擦力是指如下的力，即，在使加強層位於黏結層上之後，在其上方放置1kg的砝碼並向上述加強層施加水準力，在此情況下，上述加強層在上述黏結層滑動（slip）。Here, the above-mentioned sliding friction force refers to the force that, after the reinforcing layer is positioned on the adhesive layer, a weight of 1 kg is placed on it and a horizontal force is applied to the above-mentioned reinforcing layer. In this case, the above-mentioned reinforcing layer is in The above-mentioned adhesive layer slips.

本發明的四側無引腳扁平半導體封裝用遮罩片100的滑動摩擦力為700gf/50mm以下，當捲繞遮罩片時，因黏結層與加強層之間產生適當的滑動現象而不會產生氣泡或皺褶。當上述滑動摩擦力大於700gf/50mm時，因黏結層與加強層之間產生黏結而無法相互滑動，從而產生在遮罩片產生氣泡或皺褶的機率非常高的問題。The sliding friction force of the mask sheet 100 for a four-side leadless flat semiconductor package of the present invention is 700gf/50mm or less. Bubbles or wrinkles are produced. When the above-mentioned sliding friction force is greater than 700gf/50mm, the adhesive layer and the reinforcing layer cannot slide with each other due to the adhesion between the adhesive layer and the reinforcing layer, so that the probability of generating bubbles or wrinkles in the mask sheet is very high.

如上所述，參照圖1，本發明的四側無引腳扁平半導體封裝用遮罩片100包括：支撐膜10；黏結層20，位於支撐膜的上方；以及加強層30，位於上述支撐膜10的下部面。As described above, with reference to FIG. 1 , the mask sheet 100 for a four-side leadless flat semiconductor package of the present invention includes: a support film 10 ; an adhesive layer 20 located above the support film; and a reinforcement layer 30 located on the support film 10 the lower face.

首先，針對支撐膜10進行說明。對於上述支撐膜10並沒有特別限制，可使用耐熱性樹脂膜。耐熱性樹脂膜具有即使在200℃以上的高溫條件下也不會劣化的優點。並且，較佳地，為了增加耐熱性，上述支撐膜10的玻璃化轉變溫度Tg為200℃以上。First, the support film 10 will be described. The above-mentioned support film 10 is not particularly limited, and a heat-resistant resin film can be used. The heat-resistant resin film has an advantage that it does not deteriorate even under high temperature conditions of 200° C. or higher. Furthermore, in order to increase heat resistance, preferably, the glass transition temperature Tg of the above-mentioned support film 10 is 200° C. or higher.

上述耐熱性樹脂膜可使用芳香族聚醯亞胺、芳香族聚醯胺、芳香族聚醯胺醯亞胺、芳香族聚碸、芳香族聚醚碸、聚苯硫醚、芳香族聚醚酮、聚芳酯、芳香族聚醚醚酮、聚萘二甲酸乙二醇酯、聚對苯二甲酸乙二醇酯等。As the above-mentioned heat-resistant resin film, aromatic polyimide, aromatic polyamide, aromatic polyamide imide, aromatic polyamide, aromatic polyether ether, polyphenylene sulfide, and aromatic polyether ketone can be used. , polyarylate, aromatic polyether ether ketone, polyethylene naphthalate, polyethylene terephthalate, etc.

更較佳地，為了具備耐熱性並能夠進一步增加對於黏結層的緊貼性，上述支撐膜10可使用聚醯亞胺膜。上述聚醯亞胺膜可被進行等離子處理、電暈放電處理、底塗處理等高附著處理。在上述支撐膜10相對於黏結層20的緊貼性較低的情況下，當從引腳框架及密封層去除遮罩片100時，因上述黏結層20與支撐膜10的介面產生剝離而導致黏結層20殘留在引腳框架及密封層側。因此，較佳地，應充分提高支撐膜10相對於黏結層20的緊貼性。More preferably, in order to have heat resistance and to further increase the adhesion to the adhesive layer, the support film 10 may use a polyimide film. The above-mentioned polyimide film may be subjected to high adhesion treatment such as plasma treatment, corona discharge treatment, and primer treatment. When the adhesion of the support film 10 to the adhesive layer 20 is low, when the mask sheet 100 is removed from the lead frame and the sealing layer, the interface between the adhesive layer 20 and the support film 10 is peeled off. The adhesive layer 20 remains on the lead frame and the sealing layer side. Therefore, preferably, the adhesion of the support film 10 to the adhesive layer 20 should be sufficiently improved.

對於支撐膜10的厚度並沒有特別限制，可以為5μm至50μm，只要減少引腳框架的殘留應力即可。The thickness of the support film 10 is not particularly limited, and may be 5 μm to 50 μm as long as the residual stress of the lead frame is reduced.

接著，針對本發明的四側無引腳扁平半導體封裝用遮罩片100所包括的黏結層20進行說明。Next, the adhesive layer 20 included in the mask sheet 100 for a four-side no-lead flat semiconductor package of the present invention will be described.

上述黏結層20可包含熱塑性樹脂作為主要成分，但是，上述黏結層20的成分並不限定於此。The adhesive layer 20 may contain a thermoplastic resin as a main component, but the composition of the adhesive layer 20 is not limited to this.

尤其，上述黏結層20可包括含有醯胺（-NHCO-）、酯基（-CO-O-）、醯亞胺基（-NR2，單R分別為-CO-）、醚基（-O-）、碸基（-SO2-）的熱塑性樹脂。更具體地，上述黏結層20可包含芳香族聚醯胺、芳香族聚酯、芳香族聚醯亞胺、芳香族聚醯胺醯亞胺、芳香族聚醚、芳香族聚醚醯胺醯亞胺、芳香族聚醚醯胺、芳香族聚酯醯亞胺及芳香族聚醚醯亞胺等。In particular, the above-mentioned adhesive layer 20 may include amide groups (-NHCO-), ester groups (-CO-O-), imide groups (-NR2, single R is -CO-), ether groups (-O- ), silo-based (-SO2-) thermoplastic resin. More specifically, the above-mentioned adhesive layer 20 may comprise aromatic polyamide, aromatic polyester, aromatic polyimide, aromatic polyamide imide, aromatic polyether, and aromatic polyether imide imide. Amine, aromatic polyetherimide, aromatic polyesterimide and aromatic polyetherimide, etc.

較佳地，為了改善滑動性等，上述黏結層20可包括含有醯亞胺基（-NR2，但是R分別為-CO-）的熱塑性樹脂。Preferably, in order to improve the sliding property and the like, the above-mentioned adhesive layer 20 may comprise a thermoplastic resin containing an imide group (-NR2, but R is -CO-, respectively).

上述熱塑性樹脂均可通過縮聚作為堿基成分的芳香族二胺或雙酚等、作為酸成分的二甲酸、三甲酸、四甲酸或芳香族氯化物或它們的反應性衍生物來製備。即，可使用通常用於氨基與酸反應的方法執行，對於多種條件等並沒有特別限制。對於芳香族二甲酸、芳香族三甲酸或它們的反應性衍生物與二胺的縮聚反應使用通常方法執行。All of the above-mentioned thermoplastic resins can be prepared by polycondensing aromatic diamines, bisphenols, etc. as the halide group component, dicarboxylic acid, tricarboxylic acid, tetracarboxylic acid, or aromatic chloride or their reactive derivatives as the acid component. That is, it can be performed using a method generally used for the reaction of an amino group with an acid, and various conditions and the like are not particularly limited. The polycondensation reaction of aromatic dicarboxylic acid, aromatic tricarboxylic acid or their reactive derivatives with diamine is carried out using a usual method.

更具體地，為了製備本發明的黏結層20所包含的含有醯亞胺基的熱塑性樹脂，作為四甲酸二酐可使用選自均苯四甲酸二酐（PMDA）、4,4'-聯苯醚二酐（ODPA）、3,3',4,4'-聯苯四甲酸二酐（BPDA）、3,3',4,4'-二苯甲酮四甲酸二酐（BTDA）、3,3',4,4'-二苯碸四羧酸二酐（DSDA）、六氟二酐（6FDA）、m（p）-三聯苯-3,4,3',4'-四甲酸二酐、1,2,3,4-環丁烷四甲酸二酐（CBDA）、1-羧基二甲基-2,3,5-環戊烷三甲酸-2,6,3,5-二酐（TCAAH）、1,2,4,5-環己烷四甲酸二酐（CHDA）、丁烷-1,2,3,4-四甲酸二酐（BuDA）、1,2,3,4-環戊烷四甲酸二酐（CPDA）、5-（2,5-二氧代四氫呋喃基）-3-甲基環己烯-1,2-二羧酸二酐（DOCDA）、4-（2,5-二氧代四氫呋喃基-3-基）-四氫化萘-1,2-二甲酸二酐（DOTDA）、雙環辛烯-2,3,5,6-四甲酸二酐（BODA），萘-1,4,5,8-四甲酸二酐（NTDA）等中的一種或兩種以上的四甲酸二酐。More specifically, in order to prepare the thermoplastic resin containing an imide group contained in the adhesive layer 20 of the present invention, the tetracarboxylic dianhydride can be selected from the group consisting of pyromellitic dianhydride (PMDA), 4,4'-biphenyl Ether dianhydride (ODPA), 3,3',4,4'-biphenyltetracarboxylic dianhydride (BPDA), 3,3',4,4'-benzophenone tetracarboxylic dianhydride (BTDA), 3 ,3',4,4'-Diphenyltetracarboxylic dianhydride (DSDA), Hexafluorodianhydride (6FDA), m(p)-terphenyl-3,4,3',4'-tetracarboxylic acid Anhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride (CBDA), 1-carboxydimethyl-2,3,5-cyclopentanetricarboxylic acid-2,6,3,5-dianhydride (TCAAH), 1,2,4,5-cyclohexanetetracarboxylic dianhydride (CHDA), butane-1,2,3,4-tetracarboxylic dianhydride (BuDA), 1,2,3,4- Cyclopentanetetracarboxylic dianhydride (CPDA), 5-(2,5-dioxotetrahydrofuranyl)-3-methylcyclohexene-1,2-dicarboxylic acid dianhydride (DOCDA), 4-(2 ,5-dioxotetrahydrofuranyl-3-yl)-tetrahydronaphthalene-1,2-dicarboxylic dianhydride (DOTDA), bicyclooctene-2,3,5,6-tetracarboxylic dianhydride (BODA), One or more tetracarboxylic dianhydrides of naphthalene-1,4,5,8-tetracarboxylic dianhydride (NTDA) and the like.

另一方面，作為另一種單體的芳香族二胺，使用包含選自矽氧烷衍生物、2'-（甲基丙烯醯氧基）乙基3,5-二氨基苯甲酸酯、3,5-二氨基苯肉桂酸酯、香豆素3,5-二氨基苯甲酸酯中的一種或兩種以上感光性官能團的芳香族二胺作為必要成分。On the other hand, as the aromatic diamine of another monomer, a compound selected from the group consisting of siloxane derivatives, 2'-(methacryloyloxy)ethyl 3,5-diaminobenzoate, 3 , 5-diaminophenyl cinnamate, coumarin 3,5-diaminobenzoate one or two or more photosensitive functional groups of aromatic diamines as essential components.

並且，除上述二胺單體外，作為本發明通常使用的芳香族二胺單體使用選自對苯二胺（PPD）、間苯二胺（MPD）、2,4-甲苯二胺（TDA）、4,4'-二氨基二苯甲烷（MDA）、4,4'-二氨基二苯醚（DPE）、3,4'-二氨基二苯醚（3,4'-DPE）、3,3'-二甲基-4,4'-二氨基聯苯（TB）、2,2'-二甲基-4,4'-二氨基聯苯（m-TB）、2,2'-雙（三氟甲基）-4,4'-二氨基聯苯（TFMB）、3,7-二氨基-二甲基二苯並噻吩-5,5-二氧化物（TSN）、4, 4'-二氨基二苯甲酮（BTDA）、3,3'-二氨基二苯甲酮（3,3'-BTDA）、4,4'-二氨基二苯硫醚（ASD）、4,4'-二氨基二苯碸（ASN）、4,4'-二氨基苯甲醯苯胺（DABA）、1,n-（4-氨基苯氧基）烷烴（DAnMG）、1,3-雙（4-氨基苯氧基）2,2-二甲基丙烷（DANPG）、1,2-雙[2-（4-氨基苯氧基）乙氧基]乙烷（DA3EG）、9,9-雙（4-氨基苯基）芴（FDA）、5（6）-氨基-1-（4-氨基苯基）-1,3,3-三甲基茚滿（PIDN）、1,4-雙（4-氨基苯氧基）苯（TPE-Q）、1,3-雙（4-氨基苯氧基）苯（TPE-R）、1,3-雙（3-氨基苯氧基）苯（APB）、4,4'-雙（4-氨基苯氧基）聯苯（BAPB）、4,4'-雙（3-氨基苯氧基）聯苯（BAPB-M）、2,2-雙[4-（4-氨基苯氧基）苯基]丙烷（BAPP）、2,2-雙（3-氨基苯氧基苯基）丙烷（BAPP-M）、雙[4-（4-氨基苯氧基）苯基]碸（BAPS）、雙[4-（3-氨基苯氧基）苯基]碸（BAPS-M）、2,2-雙[4-（4-氨基苯氧基）苯基]六氟丙烷（HFBAPP）、3,3'-二羧基-4,4'-二氨基二苯甲烷（MBAA）、4,6-二羥基-1,3-苯二胺（DADHB）、3,3'-二羥基-4,4'-二氨基聯苯（HAB）、2,2-雙（3-氨基-4-羥基苯基）六氟丙烷（6FAP）、3,3',4,4'-四氨基聯苯（TAB）、1,6-二氨基己烷（HMD）、1,3-雙（3-氨基丙基）-1,1,3,3-四甲基矽氧烷、1-氨基-3-氨甲基-3,5,5-三甲基環己烷（DAIP）、4,4'-亞甲基雙（4-環己胺）（DCHM）、1,4-氨基環己烷（DACH）、雙環[2,2,1]庚烷雙甲胺（NBDA）、三環[3,3,1,13,7]癸烷-1,3-二胺、4-氨基苯甲酸-4-氨基苯基醚（APAB）、2-（4-氨基苯基）-5-氨基苯並惡唑（5ABO）、9,9-雙[4-（4-氨基苯氧基）苯基]芴（BAOFL）、2,2-雙（3-雙（3-磺基丙氧基）-4,4'-二氨基聯苯（3,3'-BSPB）、4,4'-雙（4-氨基苯氧基）聯苯-3,3'-二磺酸（pBAPBDS)、雙（4-氨基苯基）六氟丙烷（HFDA）、5-二氨基苯甲酸、2,4-二氨基苯磺酸、2,5-二氨基苯磺酸、2,2-二氨基苯二磺酸等中的一種或兩種以上的二胺單體。In addition to the above-mentioned diamine monomers, as the aromatic diamine monomers generally used in the present invention, a group selected from p-phenylenediamine (PPD), m-phenylenediamine (MPD), and 2,4-toluenediamine (TDA) is used. ), 4,4'-diaminodiphenylmethane (MDA), 4,4'-diaminodiphenyl ether (DPE), 3,4'-diaminodiphenyl ether (3,4'-DPE), 3 ,3'-dimethyl-4,4'-diaminobiphenyl (TB), 2,2'-dimethyl-4,4'-diaminobiphenyl (m-TB), 2,2'- Bis(trifluoromethyl)-4,4'-diaminobiphenyl (TFMB), 3,7-diamino-dimethyldibenzothiophene-5,5-dioxide (TSN), 4,4 '-Diaminobenzophenone (BTDA), 3,3'-Diaminobenzophenone (3,3'-BTDA), 4,4'-Diaminodiphenylsulfide (ASD), 4,4 '-Diaminodiphenylene (ASN), 4,4'-diaminobenzylaniline (DABA), 1,n-(4-aminophenoxy)alkane (DAnMG), 1,3-bis(4 -aminophenoxy) 2,2-dimethylpropane (DANPG), 1,2-bis[2-(4-aminophenoxy)ethoxy]ethane (DA3EG), 9,9-bis( 4-Aminophenyl) fluorene (FDA), 5(6)-amino-1-(4-aminophenyl)-1,3,3-trimethylindan (PIDN), 1,4-bis(4 -Aminophenoxy)benzene (TPE-Q), 1,3-bis(4-aminophenoxy)benzene (TPE-R), 1,3-bis(3-aminophenoxy)benzene (APB) , 4,4'-bis(4-aminophenoxy)biphenyl (BAPB), 4,4'-bis(3-aminophenoxy)biphenyl (BAPB-M), 2,2-bis[4 -(4-Aminophenoxy)phenyl]propane (BAPP), 2,2-bis(3-aminophenoxyphenyl)propane (BAPP-M), bis[4-(4-aminophenoxy) ) phenyl] bis(BAPS), bis[4-(3-aminophenoxy)phenyl] bis(BAPS-M), 2,2-bis[4-(4-aminophenoxy)phenyl] Hexafluoropropane (HFBAPP), 3,3'-dicarboxy-4,4'-diaminodiphenylmethane (MBAA), 4,6-dihydroxy-1,3-phenylenediamine (DADHB), 3,3 '-Dihydroxy-4,4'-diaminobiphenyl (HAB), 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (6FAP), 3,3',4,4' - Tetraaminobiphenyl (TAB), 1,6-diaminohexane (HMD), 1,3-bis(3-aminopropyl)-1,1,3,3-tetramethylsiloxane, 1 -Amino-3-aminomethyl-3,5,5-trimethylcyclohexane (DAIP), 4,4'-methylenebis(4-cyclohexylamine) (DCHM), 1,4-amino Cyclohexane (DACH), Bicyclo[2,2,1]heptane dimethylamine (NBDA), Tricyclo[3,3,1 ,13,7] Decane-1,3-diamine, 4-aminobenzoic acid-4-aminophenyl ether (APAB), 2-(4-aminophenyl)-5-aminobenzoxazole (5ABO ), 9,9-bis[4-(4-aminophenoxy)phenyl]fluorene (BAOFL), 2,2-bis(3-bis(3-sulfopropoxy)-4,4'- Diaminobiphenyl (3,3'-BSPB), 4,4'-bis(4-aminophenoxy)biphenyl-3,3'-disulfonic acid (pBAPBDS), bis(4-aminophenyl) One or both of hexafluoropropane (HFDA), 5-diaminobenzoic acid, 2,4-diaminobenzenesulfonic acid, 2,5-diaminobenzenesulfonic acid, 2,2-diaminobenzenedisulfonic acid, etc. more than one diamine monomer.

並且，上述黏結層20還可根據需求包含額外成分，例如，無機填充劑。In addition, the above-mentioned adhesive layer 20 may also contain additional components, such as inorganic fillers, as required.

並且，較佳地，在230℃至250℃的溫度條件下沖壓後的本發明的用於四側無引腳扁平半導體封裝的掩膜100所包括的黏結層20的黏結力為5gf/25mm以上且600gf/25mm以下。當被沖壓後的上述黏結力小於5gf/25mm時，在移動或裝載於設備等處理過程中將產生掩模片輕易從引腳框架剝離的問題，當大於600gf/25mm時，在最終工序中將產生難以剝離遮罩片或留有大量黏結殘留物的問題。Furthermore, preferably, the adhesive force of the adhesive layer 20 included in the mask 100 for a four-side leadless flat semiconductor package of the present invention after being punched at a temperature of 230° C. to 250° C. is 5gf/25mm or more And 600gf/25mm or less. When the above-mentioned adhesive force after being punched is less than 5gf/25mm, the problem that the mask sheet is easily peeled off from the lead frame will occur during the process of moving or loading the equipment. When it is greater than 600gf/25mm, the final process will Problems arise that the mask sheet is difficult to peel off or leaves a large amount of adhesive residue.

其中，上述黏結力是指上述遮罩片100相對於引腳框架及密封層的黏結力，是指經過基於熱處理的密封工序後的黏結力。The above-mentioned adhesive force refers to the adhesive force of the mask sheet 100 relative to the lead frame and the sealing layer, and refers to the adhesive force after the sealing process based on heat treatment.

並且，較佳地，本發明的四側無引腳扁平半導體封裝用遮罩片100所包括的黏結層20的玻璃化轉變溫度應為100℃至250℃，以便維持常溫條件下的黏結性。其中，未特別限定上述玻璃化轉變溫度的測定方法，通常是指通過差示掃描熱量測定、差示熱測定、動態黏彈性測定或熱機械分析進行測定的值。Furthermore, preferably, the glass transition temperature of the adhesive layer 20 included in the mask sheet 100 for a four-side no-lead flat semiconductor package of the present invention should be 100°C to 250°C, so as to maintain the adhesiveness under normal temperature conditions. However, the measurement method of the above-mentioned glass transition temperature is not particularly limited, but generally refers to a value measured by differential scanning calorimetry, differential calorimetry, dynamic viscoelasticity measurement, or thermomechanical analysis.

接著，針對本發明的四側無引腳扁平半導體封裝用遮罩片100所包括的加強層30進行說明。Next, the reinforcement layer 30 included in the mask sheet 100 for a four-side no-lead flat semiconductor package of the present invention will be described.

雖然，對於上述加強層30並沒有特別限制，但是，上述加強層30可由與上述黏結層20相同的成分製備而成。Although the above-mentioned reinforcing layer 30 is not particularly limited, the above-mentioned reinforcing layer 30 may be prepared from the same composition as the above-mentioned adhesive layer 20 .

但是，較佳地，本發明的加強層30應包含0.1重量百分比至5重量百分比的無機粒子，以便改善與黏結層20之間的滑動性。當加強層30所包含的上述無機粒子小於0.1重量百分比時，將無法有效改善滑動性。相反，當加強層30所包含的上述無機粒子大於5重量百分比時，雖然能夠有效改善滑動性，但是，可導致增強層的功能受到限制。因此，最較佳地，為了改善滑動摩擦力，上述加強層30應包含0.5重量百分比至3重量百分比的上述無機粒子。However, preferably, the reinforcing layer 30 of the present invention should contain 0.1% to 5% by weight of inorganic particles, so as to improve the sliding property with the adhesive layer 20 . When the above-mentioned inorganic particles contained in the reinforcing layer 30 are less than 0.1 weight percent, the sliding property cannot be effectively improved. On the contrary, when the above-mentioned inorganic particles contained in the reinforcing layer 30 are more than 5 weight percent, although the sliding property can be effectively improved, the function of the reinforcing layer may be limited. Therefore, most preferably, in order to improve the sliding friction, the above-mentioned reinforcing layer 30 should contain 0.5% to 3% by weight of the above-mentioned inorganic particles.

對於上述無機粒子並沒有特別限制，可使用烘制二氧化矽等無機粒子，較佳地，為了改善滑動性，上述無機粒子的粒子尺寸應為5nm至30nm。The above-mentioned inorganic particles are not particularly limited, and inorganic particles such as fumed silica can be used. Preferably, in order to improve the sliding property, the particle size of the above-mentioned inorganic particles should be 5 nm to 30 nm.

接著，較佳地，在230℃的溫度條件下，本發明的四側無引腳扁平半導體封裝用遮罩片100的彈性率為5Mpa以上。上述彈性率是指在230℃的溫度條件下測定的固體剪切彈性率。若上述彈性率為5MPa以上，則本發明的遮罩片100可在密封工序過後防止在引腳框架及密封層產生黏結殘留物。其中，上述彈性率可通過將5mm×8mm尺寸的遮罩片的試片放置於固體剪切測定夾具並利用動態黏彈性測定裝置（例如，UBM KK製造，Rheogel-E4000）來測定。Next, preferably, under the temperature condition of 230° C., the elasticity modulus of the mask sheet 100 for a four-side leadless flat semiconductor package of the present invention is more than 5 Mpa. The above-mentioned elastic modulus means the solid shear elastic modulus measured under the temperature condition of 230°C. If the elastic modulus is 5 MPa or more, the mask sheet 100 of the present invention can prevent adhesion residues from being generated on the lead frame and the sealing layer after the sealing process. Here, the above-mentioned elastic modulus can be measured by placing a test piece of a mask sheet with a size of 5 mm×8 mm in a solid shear measurement jig and using a dynamic viscoelasticity measuring apparatus (for example, Rheogel-E4000 manufactured by UBM KK).

而且，較佳地，本發明的四側無引腳扁平半導體封裝用遮罩片100的5％質量損失溫度為400℃以上。由此，本發明的遮罩片100可通過減少脫氣量來獲得更加優秀的金屬線焊接性能。上述5％質量損失溫度可利用差示熱天平（例如，Seiko Instruments KK製造，SSC5200型）來在10℃/分鐘的升溫速度及空氣環境條件下測定。Furthermore, preferably, the 5% mass loss temperature of the mask sheet 100 for a four-side leadless flat semiconductor package of the present invention is 400° C. or higher. Therefore, the mask sheet 100 of the present invention can obtain better wire bonding performance by reducing the amount of outgassing. The above-mentioned 5% mass loss temperature can be measured using a differential thermobalance (for example, manufactured by Seiko Instruments KK, model SSC5200) at a heating rate of 10°C/min and air ambient conditions.

而且，本發明的四側無引腳扁平半導體封裝用遮罩片100還可包括保護膜（未圖示），上述保護膜形成在上述黏結層20的上述支撐膜10所在的面的背面。對於上述保護膜並沒有特別限制，較佳使用聚對苯二甲酸乙二醇酯膜，上述聚對苯二甲酸乙二醇酯膜可具有離型層。上述保護膜的厚度可以為10μm至100μm。Furthermore, the mask sheet 100 for a four-side no-lead flat semiconductor package of the present invention may further include a protective film (not shown) formed on the backside of the surface where the support film 10 of the adhesive layer 20 is located. The above protective film is not particularly limited, and a polyethylene terephthalate film is preferably used, and the above polyethylene terephthalate film may have a release layer. The thickness of the above protective film may be 10 μm to 100 μm.

如上所述，由於上述黏結層與加強層的滑動性得到改善，因此，本發明的四側無引腳扁平半導體封裝用遮罩片100具有即使在長時間捲繞保管的情況下也可防止耐久性或物性產生劣化的優秀效果。As described above, since the sliding properties of the adhesive layer and the reinforcing layer are improved, the mask sheet 100 for a four-side no-lead flat semiconductor package of the present invention has the ability to prevent durability even if it is wound and stored for a long time. Excellent effect of deterioration of properties or physical properties.

並且，本發明的四側無引腳扁平半導體封裝用遮罩片100還具有如下的優秀效果，即，即使在四側無引腳扁平半導體封裝的製造工序中產生的高溫和等離子處理過程中，物性也不會產生劣化。In addition, the mask sheet 100 for 4-side no-lead flat semiconductor package of the present invention also has the excellent effect that even in the high temperature and the plasma treatment process generated in the manufacturing process of the 4-side no-lead flat semiconductor package, Physical properties do not deteriorate.

引腳框架及四側無引腳扁平半導體封裝Lead frame and four-side leadless flat semiconductor package

以下，針對本發明的引腳框架及四側無引腳扁平半導體封裝進行詳細說明。Hereinafter, the lead frame and the four-side leadless flat semiconductor package of the present invention will be described in detail.

本發明的引腳框架包括：引腳框架，包括裸片墊及內引腳；以及本發明的遮罩片100，上述遮罩片100黏結在上述引腳框架，以使得上述黏結層與上述引腳框架的一面相接觸。The lead frame of the present invention includes: a lead frame including a die pad and inner leads; and a mask sheet 100 of the present invention, the mask sheet 100 is bonded to the lead frame, so that the bonding layer and the lead frame are formed. One side of the foot frame touches.

並且，本發明的四側無引腳扁平半導體封裝包括：引腳框架，包括裸片墊及內引腳；半導體器件，裝載於上述裸片墊；金屬線，用於連接上述半導體器件和上述內引腳；密封層，用於密封上述半導體器件及上述金屬線；以及本發明的遮罩片100，在上述遮罩片中，上述黏結層黏結在上述引腳框架的裝載有上述半導體器件的面的背面。In addition, the four-side leadless flat semiconductor package of the present invention includes: a lead frame including a die pad and inner pins; a semiconductor device mounted on the die pad; and a metal wire for connecting the semiconductor device and the inner lead. A lead; a sealing layer for sealing the above-mentioned semiconductor device and the above-mentioned metal wire; and the mask sheet 100 of the present invention, in the above-mentioned mask sheet, the above-mentioned adhesive layer is bonded to the surface of the above-mentioned lead frame on which the above-mentioned semiconductor device is loaded The back.

本發明的半導體封裝可通過如下工序製造：通過上述黏結層20將遮罩片100黏結在具有裸片墊及內引腳的引腳框架的背面；將半導體器件裝載於裸片墊的另一面；對上述引腳框架進行等離子清洗；準備用於連接半導體器件和內引腳的金屬線；形成用於密封半導體器件及金屬線的密封層並製造包括引腳框架、半導體器件及密封層的半導體封裝；以及從上述半導體封裝剝離遮罩片100。The semiconductor package of the present invention can be manufactured through the following steps: bonding the mask sheet 100 on the backside of the lead frame having the die pad and inner leads through the above-mentioned adhesive layer 20; loading the semiconductor device on the other side of the die pad; Plasma cleaning the above-mentioned lead frame; preparing metal wires for connecting the semiconductor device and inner leads; forming a sealing layer for sealing the semiconductor device and the metal wire and manufacturing a semiconductor package including the lead frame, the semiconductor device and the sealing layer ; and peeling off the mask sheet 100 from the above-described semiconductor package.

將遮罩片黏結在引腳框架的工序可通過在高溫條件下（例如，150℃至200℃）進行沖壓來執行。The process of bonding the mask sheet to the lead frame may be performed by stamping under high temperature conditions (eg, 150°C to 200°C).

對於上述引腳框架的材料並沒有特別限制，例如，可使用鐵基合金、銅或銅基合金等。當使用銅及銅基合金時，可在上述引腳框架的表面包覆處理有鈀、金、銀等。為了提高與密封材料之間的密著力，可通過物理方式來使得引腳框架的表面變得粗糙。並且，也可在引腳框架表面進行化學處理，例如，防止銀漿滲出的環氧樹脂防滲出（EBO）處理等。The material of the above-mentioned lead frame is not particularly limited, for example, iron-based alloy, copper or copper-based alloy, etc. can be used. When copper and copper-based alloys are used, palladium, gold, silver, etc. can be coated on the surface of the lead frame. To improve adhesion to the encapsulant, the surface of the lead frame can be physically roughened. In addition, chemical treatments such as epoxy bleed-out (EBO) treatment to prevent the bleed-out of silver paste can also be performed on the surface of the lead frame.

半導體器件通過通常使用的黏結劑（例如，銀漿）裝載於裸片墊。可通過加熱處理（例如，在140℃至200℃的溫度下進行30分鐘至2小時）固化黏結劑。Semiconductor devices are mounted on die pads by commonly used adhesives (eg, silver paste). The adhesive can be cured by heat treatment (eg, at a temperature of 140°C to 200°C for 30 minutes to 2 hours).

對於金屬線並沒有特別限制，例如，可利用金線、銀線、銅線或鈀包覆銅線。作為一例，可在200℃至270℃的溫度條件下加熱3分鐘至60分鐘並利用超聲波和沖壓壓力來使得半導體器件及內引腳與金屬線相連接。The metal wire is not particularly limited, for example, a gold wire, a silver wire, a copper wire, or a palladium-clad copper wire may be used. As an example, the semiconductor device and the inner lead may be connected to the metal wire by heating at a temperature of 200° C. to 270° C. for 3 minutes to 60 minutes and using ultrasonic waves and stamping pressure.

在進行金屬線焊接工序之前，可對引腳框架進行等離子清洗處理。可通過等離子清洗處理進一步提高密封層與引腳框架之間的緊貼性來提高半導體封裝的可靠性。作為一例，等離子清洗處理可通過在減壓條件下（例如，9.33Pa以下）注入規定氣體流量的氬氣、氮氣、氧氣等氣體並照射等離子的方法來執行。等離子的照射功率可以為10W至1000W。並且，等離子處理時間可以為5秒至300秒。在等離子處理過程中，氣體流量可以為5sccm至50sccm。The lead frame may be plasma cleaned prior to the wire bonding process. The reliability of the semiconductor package can be improved by further improving the tightness between the sealing layer and the lead frame by the plasma cleaning process. As an example, the plasma cleaning process can be performed by a method of injecting gases such as argon, nitrogen, and oxygen at a predetermined gas flow rate under reduced pressure (eg, 9.33 Pa or less) and irradiating the plasma. The irradiation power of the plasma may be 10W to 1000W. Also, the plasma treatment time may be 5 seconds to 300 seconds. During plasma processing, the gas flow may be 5 sccm to 50 sccm.

在密封工序中，利用密封材料形成密封層。可通過密封工序獲得將多個半導體器件及一併進行密封的密封層包括在內的半導體封裝。在進行密封工序的過程中，應防止密封材料因遮罩片而流入到引腳框架的背面側。In the sealing step, a sealing layer is formed with a sealing material. Through the sealing step, a semiconductor package including a plurality of semiconductor devices and a sealing layer that is sealed together can be obtained. During the sealing process, the sealing material should be prevented from flowing into the back side of the lead frame due to the mask sheet.

密封溫度為140℃至200℃，也可以為160℃至180℃。在密封工序中，壓力可以為6MPa至15MPa，加熱時間可以為1分鐘至5分鐘。The sealing temperature is 140°C to 200°C, and may be 160°C to 180°C. In the sealing process, the pressure may be 6 MPa to 15 MPa, and the heating time may be 1 minute to 5 minutes.

根據需求，上述密封層可被加熱固化。固化溫度可以為150℃至200℃，固化加熱時間可以為4小時至7小時。According to requirements, the above-mentioned sealing layer can be cured by heating. The curing temperature may be 150°C to 200°C, and the curing heating time may be 4 hours to 7 hours.

對於密封材料並沒有特別限制，例如，可使用酚醛清漆環氧樹脂、苯酚酚醛環氧樹脂、聯苯二環氧樹脂、萘酚酚醛環氧樹脂等環氧樹脂。可在上述密封材料中添加填充劑、溴化合物等阻燃性物質、蠟成分等添加劑。The sealing material is not particularly limited, and for example, epoxy resins such as novolak epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin can be used. Additives, such as a filler, flame-retardant substances, such as a bromine compound, and a wax component, may be added to the said sealing material.

經過密封工序後，在所獲得的半導體封裝中，將從引腳框架及密封層剝離遮罩片。在固化密封層的情況下，可在固化前或固化後剝離遮罩片。After the sealing process, in the obtained semiconductor package, the mask sheet is peeled off from the lead frame and the sealing layer. In the case of curing the sealing layer, the mask sheet may be peeled off before or after curing.

對於剝離溫度並沒有特別限制，可在常溫條件下（例如，5℃至35℃）執行。The peeling temperature is not particularly limited, and it can be performed under normal temperature conditions (for example, 5°C to 35°C).

進行剝離工序後，可根據需求追加執行去除殘留在引腳框架及密封層上的黏結殘留物的工序。在此情況下，可利用溶劑去除殘留的黏結層。作為溶劑，可使用二甲基亞碸、乙二醇、水等。溶劑可單獨使用一種，也可混合使用兩種以上。溶劑也可添加有表面活性劑。在溶劑包含水的情況下，溶劑可以為鹼性調製溶液（鹼性溶液）。鹼性溶液的pH為10以上或12以上。除利用溶劑去除殘留外，還可以根據需求進行機械刷洗。After the peeling process, a process of removing adhesion residues remaining on the lead frame and the sealing layer can be additionally performed as required. In this case, the remaining adhesive layer can be removed with a solvent. As the solvent, dimethylsulfoxide, ethylene glycol, water, or the like can be used. A solvent may be used individually by 1 type, and may be used in mixture of 2 or more types. The solvent may also have a surfactant added. When the solvent contains water, the solvent may be an alkaline preparation solution (alkaline solution). The pH of the alkaline solution is 10 or more or 12 or more. In addition to the removal of residues with solvents, mechanical scrubbing is also possible upon request.

當引腳框架包括具有裸片墊及內引腳的多個圖案時，可根據需求分割密封的封裝來獲得分別具有一個半導體器件的多個半導體封裝。When the lead frame includes a plurality of patterns with die pads and inner leads, the sealed package can be divided according to requirements to obtain a plurality of semiconductor packages each having one semiconductor device.

像這樣，由於在高密度、小面積、薄型化等層面上的優秀特性，本發明的四側無引腳扁平半導體封裝可適用於手機、智慧型手機、個人電腦、平板電腦等電子設備。As such, due to its excellent characteristics in terms of high density, small area, and thinning, the four-side leadless flat semiconductor package of the present invention can be applied to electronic devices such as mobile phones, smart phones, personal computers, and tablet computers.

以下，通過較佳實施例進一步詳細說明本發明。以下實施例僅為用於進一步詳細說明本發明而公開的示例。因此，本發明並不限定於以下實施例。Hereinafter, the present invention will be further described in detail through preferred embodiments. The following examples are only examples disclosed to further illustrate the invention in detail. Therefore, the present invention is not limited to the following examples.

實施例Example

1、黏結層的製造1. Manufacture of adhesive layer

按下表1所示的內容製造用於遮罩片的黏結層。The adhesive layer for the mask sheet was fabricated as shown in Table 1 below.

利用以下摩爾比的聚醯亞胺樹脂製備清漆，從而製備用於黏結層的製備液。 [表1]   摩爾比 （胺：酐） 胺（Am） 酐（Ah） 無機填充劑 （R972） （重量百分比） TPE-R BAPP p-PDA m-Td PAM-E BPDA PMDA A1 100：100 70 10 15 - 5 100 - - A2 100：100 70 8 15 - 7 80 20 - A3 100：100 70 9 14 - 7 90 10 - *TPE-R：1,3'-雙（4-氨基苯氧基）苯 *BAPP：2,2-雙[4-（4-氨基苯氧基）苯基]丙烷 *p-PDA：對苯二胺 *m-Td：4,4'-二氨基-2,2'-二甲基聯苯 *PAM-E：氨基改性反應性矽油（Shinetsu silicone製造） *BPDA：3,3',4,4'-聯苯四甲酸二酐 *PMDA：均苯四甲酸二酐 *R972：AEROSIL®R 972（Evonik製造） A varnish was prepared using the polyimide resin in the following molar ratio to prepare a preparation liquid for an adhesive layer. [Table 1] Molar ratio (amine:anhydride) Amine (Am) Anhydride (Ah) Inorganic filler (R972) (weight percent) TPE-R BAPP p-PDA m-Td PAM-E BPDA PMDA A1 100:100 70 10 15 - 5 100 - - A2 100:100 70 8 15 - 7 80 20 - A3 100:100 70 9 14 - 7 90 10 - *TPE-R: 1,3'-bis(4-aminophenoxy)benzene *BAPP: 2,2-bis[4-(4-aminophenoxy)phenyl]propane *p-PDA: p-benzene Diamine*m-Td: 4,4'-diamino-2,2'-dimethylbiphenyl*PAM-E: Amino-modified reactive silicone oil (manufactured by Shinetsu silicone) *BPDA: 3,3',4 ,4'-biphenyltetracarboxylic dianhydride *PMDA: pyromellitic dianhydride *R972: AEROSIL® R 972 (manufactured by Evonik)

2、加強層的製造2. Manufacture of reinforcement layer

按下表2所示的內容製造用於遮罩片的加強層。Reinforcing layers for mask sheets were fabricated as shown in Table 2 below.

利用以下摩爾比的聚醯亞胺樹脂製備清漆，從而製備用於加強層的製備液。 [表2]   摩爾比 （Am：Ah） 胺（Am） 酐（Ah） 無機粒子 （R972） （重量百分比） TPE-R BAPP p-PDA m-Td PAM-E BPDA PMDA S1 100：100 - 70 - 30 - 70 30 0 S2 100：100 - 70 - 30 - 70 30 0.5 S3 100：100 - 70 - 30 - 70 30 1.0 S4 100：100 - 70 - 30 - 70 30 2.0 S5 100：100 - 70 - 30 - 70 30 3.0 A varnish was prepared using the polyimide resin in the following molar ratio, thereby preparing a preparation liquid for a reinforcing layer. [Table 2] Molar ratio (Am:Ah) Amine (Am) Anhydride (Ah) Inorganic particles (R972) (weight percent) TPE-R BAPP p-PDA m-Td PAM-E BPDA PMDA S1 100:100 - 70 - 30 - 70 30 0 S2 100:100 - 70 - 30 - 70 30 0.5 S3 100:100 - 70 - 30 - 70 30 1.0 S4 100:100 - 70 - 30 - 70 30 2.0 S5 100:100 - 70 - 30 - 70 30 3.0

3、遮罩片的製造3. Manufacture of mask sheets

按下表3所示的內容，在支撐膜的上表面塗敷根據上述表1製備的製備液來形成黏結層，在支撐膜的另一面塗敷根據上述表2製備的製備液來形成加強層，從而製備實施例及比較例的遮罩片。As shown in Table 3 below, the upper surface of the support film was coated with the preparation solution prepared according to the above table 1 to form an adhesive layer, and the other side of the support film was coated with the preparation solution prepared according to the above table 2 to form a reinforcement layer. , to prepare the mask sheets of Examples and Comparative Examples.

支撐膜均使用了相同的PI膜。 [表3]   實施例 比較例 1 2 3 4 5 6 1 黏結層 A1 A1 A1 A1 A2 A3 A1 加強層 S2 S3 S4 S5 S2 S2 S1 The same PI film was used for the support films. [table 3] Example Comparative example 1 2 3 4 5 6 1 bonding layer A1 A1 A1 A1 A2 A3 A1 reinforcement layer S2 S3 S4 S5 S2 S2 S1

4、對於實施例的遮罩片的物性評估4. Evaluation of the physical properties of the mask sheets of the examples

針對實施例1至實施例7的遮罩片進行物性評估。在下表4中示出物性評估結果。 [表4]   實施例 1 2 3 4 5 6 黏結層的玻璃化轉變溫度 210 210 210 210 205 215 彈性率（MPa/230℃） 6.8 6.8 6.8 7 6.7 6.8 5%質量損失溫度（℃） 412 415 420 422 431 438 黏結殘留物 × × × × × × 相對於引腳框架的黏結力（gf/25mm） 10 10 10 10 12 10 Physical property evaluations were performed on the mask sheets of Examples 1 to 7. The physical property evaluation results are shown in Table 4 below. [Table 4] Example 1 2 3 4 5 6 glass transition temperature of the bonding layer 210 210 210 210 205 215 Elastic modulus (MPa/230℃) 6.8 6.8 6.8 7 6.7 6.8 5% mass loss temperature (℃) 412 415 420 422 431 438 sticky residue × × × × × × Adhesion to lead frame (gf/25mm) 10 10 10 10 12 10

以上表4所示的物性通過下述方式測定。The physical properties shown in Table 4 above were measured in the following manner.

1）5％質量損失溫度1) 5% mass loss temperature

利用差示熱天平（Seiko Instruments KK製造，SSC5200型）在10℃/分鐘的升溫速度及空氣環境條件下測定。The measurement was carried out with a differential thermobalance (manufactured by Seiko Instruments KK, model SSC5200) at a heating rate of 10°C/min and air ambient conditions.

2）彈性率2) Elasticity

在正弦波、30℃至250℃的溫度、5℃/min的升溫速度、400Hz的頻率條件下，將按5mm×8mm尺寸切割遮罩片而獲取的試片放置於固體剪切測定夾具並利用動態黏彈性測定裝置（UBM KK製造，Rheogel-E4000）來測定固體剪切彈性率。並且，將輸入厚度固定為0.1mm，將應變控制設定為1.95μm、1.95％。由此，從測定結果讀取在230℃的溫度條件下的固體剪切彈性率。Under the conditions of a sine wave, a temperature of 30°C to 250°C, a heating rate of 5°C/min, and a frequency of 400 Hz, a test piece obtained by cutting a mask sheet with a size of 5 mm × 8 mm was placed in a solid shear measurement jig and used A dynamic viscoelasticity measuring apparatus (manufactured by UBM KK, Rheogel-E4000) was used to measure the solid shear elastic modulus. In addition, the input thickness was fixed to 0.1 mm, and the strain control was set to 1.95 μm and 1.95%. Thereby, the solid shear elastic modulus under the temperature condition of 230 degreeC was read from the measurement result.

3）黏結殘留物3) Bonding residue

在24℃的常溫和20N的負荷條件下，向CDA194框架（引腳框架，Shinko Electric Industry Co.，Ltd.製造）中的黏結層與引腳框架相接觸的方向黏結實施例和比較例中的遮罩片。在空氣環境中，利用烘箱來以在180℃的溫度條件下加熱60分鐘並在200℃的溫度條件下加熱60分鐘的順序改變條件的方式加熱引腳框架及掩模片。在氬氣環境（流量：20sccm）、150W、15秒的條件下，引腳框架的掩範本的背面的上表面進行等離子處理。Under normal conditions of 24°C and a load of 20N, the adhesives in the examples and comparative examples were bonded in the direction in which the bonding layer in the CDA194 frame (lead frame, manufactured by Shinko Electric Industry Co., Ltd.) was in contact with the lead frame. mask sheet. In an air environment, the lead frame and the mask sheet were heated by changing the conditions in order of heating at a temperature of 180° C. for 60 minutes and heating at a temperature of 200° C. for 60 minutes. Under the conditions of an argon gas atmosphere (flow rate: 20 sccm), 150 W, and 15 seconds, the upper surface of the back surface of the mask template of the lead frame was plasma-treated.

在175℃的溫度、6.8MPa、2分鐘的條件下，利用模具成型機（Apikyamada KK製造）執行密封成型，由此，使用密封材料（商品名稱：GE-7470 LA，日立化成製造）在引腳框架的遮罩片的背面的上表面形成密封層。Seal molding was performed using a die molding machine (manufactured by Apikyamada KK) under the conditions of a temperature of 175° C., 6.8 MPa, and 2 minutes, whereby the lead was sealed with a sealing material (trade name: GE-7470 LA, manufactured by Hitachi Chemical). The upper surface of the back surface of the mask sheet of the frame forms a sealing layer.

隨後，沿著180°方向來以50mm/分鐘的速度剝離各個遮罩片，並確認剝離後的密封層及引腳框架上的黏結殘留物的狀態。以相對於密封層及引腳框架的表面之合的整體面積的存在黏結殘留物的部分的面積比例作為基礎，分成以下6個階段評估存在黏結殘留物的程度。Subsequently, each mask sheet was peeled off at a speed of 50 mm/min along the 180° direction, and the state of the peeled sealing layer and the adhesive residue on the lead frame was confirmed. Based on the area ratio of the portion where the adhesive residue exists relative to the total area of the sealing layer and the surface of the lead frame, the degree of the presence of the adhesive residue is evaluated in the following six stages.

5：60％至100％（剩餘的黏結層相對較厚）5: 60% to 100% (the remaining bond layer is relatively thick)

4：60％至100％（剩餘的黏結層相對較薄）4: 60% to 100% (the remaining bond layer is relatively thin)

3：30％以上且小於60％3: More than 30% and less than 60%

2：10％以上且小於30％2: More than 10% and less than 30%

1：大於0％且小於10％1: greater than 0% and less than 10%

X：0％X: 0%

4）對於引腳框架的黏結力4) Adhesion to lead frame

將各個實施例的遮罩片切割成100mm（長度）×25mm（寬度），在230℃至250℃的溫度條件下，與銅材料的引腳框架進行沖壓來製備用於評估黏結力的試片。隨後，利用黏結力測定裝置（CHEMI LAB SurTA）測定以180度的剝離強度、25℃的剝離溫度、300mm/min的剝離速度從引腳框架剝離遮罩片時的剝離強度。The mask sheet of each embodiment was cut into 100mm (length) × 25mm (width), and the lead frame of copper material was punched under the temperature condition of 230°C to 250°C to prepare a test piece for evaluating the bonding force. . Subsequently, the peel strength when peeling off the mask sheet from the lead frame at a peel strength of 180° C., a peel temperature of 25° C., and a peel speed of 300 mm/min was measured using an adhesive strength measuring apparatus (CHEMI LAB SurTA).

5、實施例與比較例的滑動摩擦力對比評估5. Comparative evaluation of sliding friction between the example and the comparative example

評估實施例和比較例的滑動摩擦力。在下表5中示出評估結果。The sliding friction force of the Examples and Comparative Examples was evaluated. The evaluation results are shown in Table 5 below.

分別準備一對在實施例和比較例中所使用的遮罩片，使得其中一個遮罩片的黏結層上方與另一個遮罩片的加強層相接觸後，在其上方放置1kg的砝碼並向上述加強層施加水準力，由此，可通過上述加強層在上述黏結層移動（slip）的力來分別測定滑動摩擦力。Prepare a pair of mask sheets used in Examples and Comparative Examples respectively, so that the top of the adhesive layer of one of the mask sheets is in contact with the reinforcing layer of the other mask sheet, and a 1kg weight is placed on the top of the mask sheet. By applying a level force to the reinforcing layer, the sliding friction force can be measured by the force of the reinforcing layer slipping on the adhesive layer, respectively.

捲繞性可通過確認當以3m/分鐘的規定速度捲繞實施例及比較例的各個遮罩片時是否產生皺褶或彎曲來確定。 [表5]   實施例 比較例 1 2 3 4 5 6 7 1 滑動摩擦力 （gf/50mm） 620 400 405 410 407 405 406 1450 捲繞性 優秀 優秀 優秀 優秀 優秀 優秀 優秀 非常差 The windability can be determined by confirming whether or not wrinkles or warps are generated when each of the mask sheets of Examples and Comparative Examples is wound at a predetermined speed of 3 m/min. [table 5] Example Comparative example 1 2 3 4 5 6 7 1 Sliding friction force (gf/50mm) 620 400 405 410 407 405 406 1450 Coilability excellent excellent excellent excellent excellent excellent excellent very bad

如表5所示，本發明的遮罩片的滑動摩擦力為700gf/50mm以下，因此，當長時間捲繞保管時，並不會產生氣泡或皺褶。但是，比較例的遮罩片的滑動摩擦力高達1450gf/50mm，因此，當以黏合層和加強層黏結的狀態捲繞保管時，產生問題的可能性非常高。As shown in Table 5, the sliding frictional force of the mask sheet of the present invention is 700 gf/50 mm or less, and therefore, bubbles and wrinkles are not generated when being wound and stored for a long time. However, since the sliding frictional force of the mask sheet of the comparative example is as high as 1450 gf/50 mm, when the adhesive layer and the reinforcing layer are wound and stored in a state where the adhesive layer and the reinforcing layer are adhered, there is a very high possibility that a problem will occur.

如上所述，雖然詳細說明了本發明，但是，本發明並不限定於在本說明書中所公開的實施例，顯而易見的是，本發明所屬技術領域具有通常知識者可在本發明的技術思想範圍內實現多種變形。並且，在說明本發明實施例的過程中，即使未明確示出說明本發明的結構所引起的作用效果，也應當承認可通過相應結構預測的效果。As described above, although the present invention has been described in detail, the present invention is not limited to the embodiments disclosed in this specification, and it is obvious that those with ordinary knowledge in the technical field to which the present invention pertains can understand the scope of the technical idea of the present invention. A variety of deformations can be realized inside. Furthermore, in the description of the embodiments of the present invention, even if the action and effect caused by the structure of the present invention are not clearly shown, it should be recognized that the effect can be predicted by the corresponding structure.

10         支撐膜 100       遮罩片 20         黏結層 30         加強層 10 Support film 100 masks 20 Bonding layer 30 Reinforcement layer

圖1為示出本發明一實施例的四側無引腳扁平半導體封裝用遮罩片的剖視圖。1 is a cross-sectional view illustrating a mask sheet for a four-side leadless flat semiconductor package according to an embodiment of the present invention.

10         支撐膜 100       遮罩片 20         黏結層 30         加強層 10 Support film 100 masks 20 Bonding layer 30 Reinforcement layer

Claims (10)

一種四側無引腳扁平半導體封裝用遮罩片，包括： 一支撐膜； 一黏結層，位於該支撐膜的一面；以及 一加強層，位於該支撐膜的該黏結層所處的面的背面， 相對於該黏結層的該加強層的滑動摩擦力為700gf/50mm以下。 A shield sheet for a four-side leadless flat semiconductor package, comprising: a support film; an adhesive layer on one side of the support film; and a reinforcement layer located on the back of the side where the adhesive layer of the support film is located, The sliding friction force of the reinforcing layer with respect to the adhesive layer is 700 gf/50 mm or less. 如請求項1之四側無引腳扁平半導體封裝用遮罩片，其中該加強層包含0.1重量百分比至5重量百分比的無機粒子。The mask sheet for a four-side leadless flat semiconductor package as claimed in claim 1, wherein the reinforcing layer contains 0.1 to 5 weight percent of inorganic particles. 如請求項1之四側無引腳扁平半導體封裝用遮罩片，其中該黏結層包含具有醯亞胺基的熱塑性樹脂。The mask sheet for a four-side leadless flat semiconductor package as claimed in claim 1, wherein the adhesive layer comprises a thermoplastic resin having an imide group. 如請求項1之四側無引腳扁平半導體封裝用遮罩片，其中該加強層包含具有醯亞胺基的熱塑性樹脂。The mask sheet for a four-side leadless flat semiconductor package as claimed in claim 1, wherein the reinforcing layer comprises a thermoplastic resin having an imide group. 如請求項1之四側無引腳扁平半導體封裝用遮罩片，其中在230℃至250℃的溫度條件下沖壓後的該黏結層的黏結力為5gf/25mm至600gf/25mm。According to claim 1, the mask sheet for flat semiconductor package without lead on four sides, wherein the adhesive force of the adhesive layer after stamping under the temperature condition of 230°C to 250°C is 5gf/25mm to 600gf/25mm. 如請求項1之四側無引腳扁平半導體封裝用遮罩片，其中該黏結層的玻璃化轉變溫度為100℃至250℃。As claimed in claim 1, the mask sheet for flat semiconductor package with no leads on four sides, wherein the glass transition temperature of the adhesive layer is 100°C to 250°C. 如請求項1之四側無引腳扁平半導體封裝用遮罩片，其中在230℃的溫度條件下，彈性率為5Mpa以上。According to claim 1, the mask sheet for flat semiconductor package without lead on the four sides, wherein under the temperature condition of 230°C, the elastic modulus is more than 5Mpa. 如請求項1之四側無引腳扁平半導體封裝用遮罩片，其中5％質量損失溫度為400℃以上。As claimed in Item 1, the four-side leadless flat semiconductor packaging mask sheet, wherein the 5% mass loss temperature is above 400°C. 一種引腳框架，包括一裸片墊及一內引腳，其中包括如請求項1至8任一項所述之遮罩片，該遮罩片黏結在該引腳框架，以使得該黏結層與該引腳框架的一面相接觸。A lead frame, comprising a die pad and an inner lead, including the mask sheet as described in any one of claims 1 to 8, the mask sheet is bonded to the lead frame, so that the bonding layer Make contact with one side of the lead frame. 一種四側無引腳扁平半導體封裝，包括： 一引腳框架，包括一裸片墊及一內引腳； 一半導體器件，裝載於該裸片墊； 一金屬線，用於連接該半導體器件和該內引腳； 一密封層，用於密封該半導體器件及該金屬線；以及 如請求項1至8任一項所述之遮罩片， 在該遮罩片中，該黏結層黏結在該引腳框架的裝載有該半導體器件的面的背面。 A four-sided leadless flat semiconductor package, comprising: a lead frame including a die pad and an inner lead; a semiconductor device mounted on the die pad; a metal wire for connecting the semiconductor device and the inner pin; a sealing layer for sealing the semiconductor device and the metal wire; and A mask sheet as claimed in any one of claims 1 to 8, In the mask sheet, the adhesive layer is bonded to the backside of the side of the lead frame on which the semiconductor device is loaded.
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