TWI761211B

TWI761211B - Display panel

Info

Publication number: TWI761211B
Application number: TW110117821A
Authority: TW
Inventors: 陳韋潔; 李冠誼; 曾文賢; 吳冠賢
Original assignee: 友達光電股份有限公司
Priority date: 2021-05-17
Filing date: 2021-05-17
Publication date: 2022-04-11
Also published as: TW202247505A

Abstract

A display panel including a substrate, a plurality of active devices, at least one of planarization layer, a plurality of bonding pads and a plurality of light emitting devices is provided. The active devices are disposed on the substrate. The at least one of planarization layer completely covers the active devices and the substrate and has a plurality of through holes. The transmittance of the at least one of planarization layer to light with a wavelength greater than 850nm is greater than 20%. The transmittance of the at least one of planarization layer to light with a wave length between 380nm and 780nm is less than 5%. The bonding pads are disposed on the at least one of planarization layer and are electrically connected to the active devices through the through holes. The light emitting devices are electrically bonded to the bonding pads.

Description

顯示面板display panel

本發明是有關於一種電子裝置，且特別是有關於一種顯示面板。The present invention relates to an electronic device, and more particularly, to a display panel.

發光二極體面板包括主動元件基板及被轉置於主動元件基板上的多個發光二極體元件。繼承發光二極體的特性，發光二極體面板因具有省電、高效率、高亮度及反應時間快等優點，有望成為下一世代顯示面板的主流。The light emitting diode panel includes an active element substrate and a plurality of light emitting diode elements transposed on the active element substrate. Inheriting the characteristics of light-emitting diodes, light-emitting diode panels are expected to become the mainstream of next-generation display panels due to their advantages of power saving, high efficiency, high brightness and fast response time.

為了增加發光二極體面板的暗態對比，一種在主動元件基板上設置吸光圖案層，且此吸光圖案層僅暴露出主動元件基板上用於接合發光二極體元件的多個接合墊的方法被提出。然而，此吸光圖案層對於可見光的吸光能力也容易造成主動元件基板上的對位標記（alignment mark）和修補結構的可視性變差，造成製程的對位準確度和修補良率下降而影響整體的生產良率。In order to increase the dark state contrast of the light emitting diode panel, a method of disposing a light absorption pattern layer on the active element substrate, and the light absorption pattern layer only exposes a plurality of bonding pads on the active element substrate for bonding the light emitting diode elements Been proposed. However, the light-absorbing ability of the light-absorbing pattern layer to visible light also easily causes the alignment marks on the active device substrate and the visibility of the repair structure to deteriorate, resulting in a decrease in the alignment accuracy and repair yield of the process, which affects the overall production yield.

本發明提供一種顯示面板，其生產良率較佳。The present invention provides a display panel with better production yield.

本發明的顯示面板，包括基板、多個主動元件、至少一平坦層、多個接合墊以及多個發光元件。這些主動元件設置在基板上。至少一平坦層整面性地覆蓋這些主動元件和基板，且具有多個接觸孔。至少一平坦層對波長大於850nm的光線的穿透率大於20%，且對於波長介於380nm至780nm之間的光線的穿透率小於5%。這些接合墊設置於至少一平坦層上，且經由這些接觸孔與這些主動元件電性連接。這些發光元件電性接合於這些接合墊上。The display panel of the present invention includes a substrate, a plurality of active elements, at least one flat layer, a plurality of bonding pads and a plurality of light emitting elements. These active elements are arranged on the substrate. At least one flat layer completely covers the active elements and the substrate, and has a plurality of contact holes. The transmittance of at least one flat layer to light with wavelengths greater than 850 nm is greater than 20%, and the transmittance to light with wavelengths between 380 nm and 780 nm is less than 5%. The bonding pads are disposed on at least one flat layer, and are electrically connected to the active elements through the contact holes. The light-emitting elements are electrically bonded to the bonding pads.

本發明的顯示面板，包括基板、多個主動元件、至少一平坦層、多個接合墊以及多個發光元件。這些主動元件設置在基板上。至少一平坦層整面性地覆蓋這些主動元件和基板，且具有多個接觸孔。至少一平坦層對波長大於850nm的光線的穿透率大於20%，且包括基材和多個顏料粒子。這些顏料粒子分散地設置於基材內，且其材料包括有機黑顏料。各顏料粒子為具有核層與殼層的核殼結構。殼層包覆核層。這些接合墊設置於至少一平坦層上，且經由這些接觸孔與這些主動元件電性連接。這些發光元件電性接合於這些接合墊上。The display panel of the present invention includes a substrate, a plurality of active elements, at least one flat layer, a plurality of bonding pads and a plurality of light emitting elements. These active elements are arranged on the substrate. At least one flat layer completely covers the active elements and the substrate, and has a plurality of contact holes. At least one flat layer has a transmittance of more than 20% to light with a wavelength greater than 850 nm, and includes a substrate and a plurality of pigment particles. These pigment particles are dispersedly arranged in the base material, and the material thereof includes organic black pigment. Each pigment particle has a core-shell structure having a core layer and a shell layer. The shell layer wraps the core layer. The bonding pads are disposed on at least one flat layer, and are electrically connected to the active elements through the contact holes. The light-emitting elements are electrically bonded to the bonding pads.

基於上述，在本發明的一實施例的顯示面板中，透過整面性地設置在接合墊與基板之間的平坦層對於波長大於850nm的紅外光的穿透率大於20%，可有效增加基板上的對位標記（alignment mark）和修補區的可視性，從而提升製程的對位準確度和修補良率。另一方面，透過此平坦層對於可見光的穿透率小於5%，除了可增加顯示面板的暗態對比外，還能縮減顯示面板的製程工序數。Based on the above, in the display panel of an embodiment of the present invention, the transmittance of infrared light with wavelengths greater than 850 nm through the flat layer disposed between the bonding pads and the substrate is greater than 20%, which can effectively increase the number of substrates Visibility of alignment marks and repair areas on top of the device, thereby improving the alignment accuracy and repair yield of the process. On the other hand, the transmittance of visible light through the flat layer is less than 5%, which not only increases the dark state contrast of the display panel, but also reduces the number of manufacturing steps of the display panel.

本文使用的「約」、「近似」、「本質上」、或「實質上」包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值，考慮到所討論的測量和與測量相關的誤差的特定數量（即，測量系統的限制）。例如，「約」可以表示在所述值的一個或多個標準偏差內，或例如±30%、±20%、±15%、±10%、±5%內。再者，本文使用的「約」、「近似」、「本質上」、或「實質上」可依量測性質、切割性質或其它性質，來選擇較可接受的偏差範圍或標準偏差，而可不用一個標準偏差適用全部性質。As used herein, "about", "approximately", "substantially", or "substantially" includes the stated value and the average value within an acceptable deviation of the particular value as determined by one of ordinary skill in the art, taking into account all The measurement in question and the specific amount of error associated with the measurement (ie, the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±15%, ±10%, ±5%, for example. Furthermore, the terms "about", "approximately", "substantially", or "substantially" as used herein may depend on measurement properties, cutting properties, or other properties to select a more acceptable range or standard deviation, and may Not one standard deviation applies to all properties.

在附圖中，為了清楚起見，放大了層、膜、面板、區域等的厚度。應當理解，當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時，其可以直接在另一元件上或與另一元件連接，或者中間元件可以也存在。相反，當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時，不存在中間元件。如本文所使用的，「連接」可以指物理及/或電性連接。再者，「電性連接」可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to a physical and/or electrical connection. Furthermore, the "electrical connection" may refer to the existence of other elements between the two elements.

現將詳細地參考本發明的示範性實施方式，示範性實施方式的實例說明於所附圖式中。只要有可能，相同元件符號在圖式和描述中用來表示相同或相似部分。Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numerals are used in the drawings and description to refer to the same or like parts.

圖1是本發明的一實施例的顯示面板的剖視示意圖。圖2是圖1的平坦層的材料組成的示意圖。圖3是圖1的兩個平坦層和一比較例的吸光圖案層的穿透率對波長的曲線圖。圖4是圖1的平坦層的接觸孔的俯視圖。FIG. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the present invention. FIG. 2 is a schematic diagram of the material composition of the planarization layer of FIG. 1 . FIG. 3 is a graph of transmittance versus wavelength for two flat layers of FIG. 1 and a light absorbing pattern layer of a comparative example. FIG. 4 is a plan view of a contact hole of the flat layer of FIG. 1 .

請參照圖1，顯示面板10包括基板100、多個主動元件T與多個發光元件200。這些主動元件T設置在基板100上。基板100的材料可包括玻璃、石英、高分子聚合物、或其他合適的（可撓）基材。舉例來說，顯示面板10還包括多條掃描線（未繪示）和多條資料線（未繪示），這些掃描線相交於這些資料線並定義出多個畫素區（未繪示）。這些畫素區各自設有彼此電性連接的發光元件200和主動元件T，且主動元件T分別與對應的一條資料線和對應的一條掃描線電性連接。更具體地說，這些主動元件T和這些發光元件200可形成多個畫素結構，且這些畫素結構分別對應這些畫素區設置。這些主動元件T適於個別地控制這些發光元件200的發光強度並形成影像畫面。Referring to FIG. 1 , the display panel 10 includes a substrate 100 , a plurality of active elements T and a plurality of light-emitting elements 200 . These active elements T are arranged on the substrate 100 . The material of the substrate 100 may include glass, quartz, high molecular polymers, or other suitable (flexible) substrates. For example, the display panel 10 further includes a plurality of scan lines (not shown) and a plurality of data lines (not shown), the scan lines intersect with the data lines and define a plurality of pixel regions (not shown) . Each of these pixel regions is provided with a light-emitting element 200 and an active element T that are electrically connected to each other, and the active element T is electrically connected to a corresponding data line and a corresponding scanning line, respectively. More specifically, the active elements T and the light-emitting elements 200 may form a plurality of pixel structures, and the pixel structures are respectively arranged corresponding to the pixel regions. The active elements T are suitable for individually controlling the luminous intensity of the light emitting elements 200 to form an image frame.

為了電性接合這些發光元件200，每一個畫素區還設有接合墊組。此接合墊組例如是接合墊BP1和接合墊BP2的組合，且發光元件200的兩個電極211、212分別電性接合於這兩個接合墊BP1、BP2。特別說明的是，每一個畫素區所設置的發光元件200數量（或接合墊組的數量）可以是單個或複數個。當每一個畫素區所設置的發光元件200數量為多個時，各畫素區內的這些發光元件200可分別具有多種發光顏色，例如紅色、綠色或藍色，但不以此為限。在本實施例中，發光元件200例如是微型發光二極體（micro light emitting diode，Micro-LED）或次毫米發光二極體（mini light emitting diode，Mini-LED）。亦即，顯示面板10可以是微型發光二極體面板或次毫米發光二極體面板。In order to electrically bond the light-emitting elements 200, each pixel area is further provided with a bonding pad group. The bonding pad group is, for example, a combination of bonding pads BP1 and BP2, and the two electrodes 211 and 212 of the light emitting element 200 are electrically connected to the two bonding pads BP1 and BP2, respectively. It is particularly noted that the number of light emitting elements 200 (or the number of bonding pad groups) disposed in each pixel area may be single or plural. When a plurality of light-emitting elements 200 are disposed in each pixel area, the light-emitting elements 200 in each pixel area may have various light-emitting colors, such as red, green or blue, but not limited thereto. In this embodiment, the light emitting element 200 is, for example, a micro light emitting diode (Micro-LED) or a sub-millimeter light emitting diode (mini light emitting diode, Mini-LED). That is, the display panel 10 may be a micro LED panel or a sub-millimeter LED panel.

進一步而言，形成主動元件T的方法可包括以下步驟：於基板100上依序形成半導體圖案SC、閘絕緣層110、閘極GE、層間絕緣層120、源極SE與汲極DE，其中半導體圖案SC具有通道區CH以及位於通道區CH相對兩側的源極區SR與汲極區DR，且源極SE與汲極DE貫穿閘絕緣層110與層間絕緣層120以分別電性連接半導體圖案SC的源極區SR與汲極區DR。Further, the method for forming the active device T may include the following steps: sequentially forming a semiconductor pattern SC, a gate insulating layer 110 , a gate GE, an interlayer insulating layer 120 , a source electrode SE and a drain electrode DE on the substrate 100 , wherein the semiconductor pattern SC, the gate insulating layer 110 , the gate electrode GE, the interlayer insulating layer 120 , the source electrode SE and the drain electrode DE The pattern SC has a channel region CH and a source region SR and a drain region DR on opposite sides of the channel region CH, and the source electrode SE and the drain electrode DE penetrate through the gate insulating layer 110 and the interlayer insulating layer 120 to electrically connect the semiconductor patterns respectively. The source region SR and the drain region DR of the SC.

在本實施例中，主動元件T的閘極GE可選擇性地配置在半導體圖案SC的上方，以形成頂部閘極型薄膜電晶體（top-gate TFT），但本發明不以此為限。在其他實施例中，主動元件的閘極GE也可配置在半導體圖案SC的下方，以形成底部閘極型薄膜電晶體（bottom-gate TFT）。另一方面，在本實施例中，半導體圖案SC的材質例如是多晶矽材料。也就是說，主動元件T例如是低溫多晶矽薄膜電晶體（LTPS TFT）。然而，本發明不限於此，在其他實施例中，主動元件也可以是非晶矽薄膜電晶體（Amorphous Silicon TFT，a-Si TFT）、微晶矽薄膜電晶體（micro-Si TFT）或金屬氧化物電晶體（Metal Oxide Transistor）。In this embodiment, the gate GE of the active element T can be selectively disposed above the semiconductor pattern SC to form a top-gate TFT, but the invention is not limited to this. In other embodiments, the gate electrode GE of the active element can also be disposed under the semiconductor pattern SC to form a bottom-gate thin film transistor (bottom-gate TFT). On the other hand, in this embodiment, the material of the semiconductor pattern SC is, for example, a polysilicon material. That is, the active element T is, for example, a low temperature polysilicon thin film transistor (LTPS TFT). However, the present invention is not limited to this, and in other embodiments, the active element may also be an amorphous silicon thin film transistor (Amorphous Silicon TFT, a-Si TFT), a microcrystalline silicon thin film transistor (micro-Si TFT) or a metal oxide Metal Oxide Transistor.

需說明的是，半導體圖案SC、閘絕緣層110、閘極GE、層間絕緣層120、源極SE與汲極DE分別可由任何所屬技術領域中具有通常知識者所周知的用於顯示面板的任一半導體圖案、任一閘絕緣層、任一閘極、任一層間絕緣層、任一源極及任一汲極來實現，且半導體圖案SC、閘絕緣層110、閘極GE、層間絕緣層120、源極SE與汲極DE分別可藉由任何所屬技術領域中具有通常知識者所周知的任一方法來形成，故於此不加以贅述。舉例來說，在本實施例中，層間絕緣層120可以是兩個絕緣材料層121、122的疊層結構，其中絕緣材料層121的材料包括氮化矽（SiNx），絕緣材料層122的材料包括氧化矽（SiOx），但不以此為限。It should be noted that, the semiconductor pattern SC, the gate insulating layer 110, the gate electrode GE, the interlayer insulating layer 120, the source electrode SE and the drain electrode DE can be selected from any of the display panels known to those skilled in the art. A semiconductor pattern, any gate insulating layer, any gate electrode, any interlayer insulating layer, any source electrode and any drain electrode are realized, and the semiconductor pattern SC, the gate insulating layer 110, the gate electrode GE, the interlayer insulating layer 120. The source electrode SE and the drain electrode DE can be respectively formed by any method well known to those skilled in the art, so they will not be described in detail here. For example, in this embodiment, the interlayer insulating layer 120 may be a stacked structure of two insulating material layers 121 and 122 , wherein the material of the insulating material layer 121 includes silicon nitride (SiNx), and the material of the insulating material layer 122 Including, but not limited to, silicon oxide (SiOx).

進一步而言，為了增加接合墊的設置表面的平整度以提高發光元件200的接合良率，顯示面板10更包括至少一平坦層。舉例來說，顯示面板10的這些主動元件T上可設有平坦層130和平坦層150。平坦層130位於這些主動元件T與平坦層150之間，且覆蓋主動元件T的源極SE、汲極DE與層間絕緣層120的部分表面。需說明的是，在本實施例中，顯示面板10的平坦層數量是以兩個為例進行示範性地說明，並不表示本發明以此為限。在其他實施例中，顯示面板的平坦層數量可根據不同的電路設計或金屬導電層的數量而調整為一個或三個以上。Furthermore, in order to increase the flatness of the surface on which the bonding pads are disposed to improve the bonding yield of the light-emitting element 200 , the display panel 10 further includes at least one flat layer. For example, the active elements T of the display panel 10 may be provided with a flat layer 130 and a flat layer 150 . The planarization layer 130 is located between the active elements T and the planarization layer 150 , and covers the source electrode SE and the drain electrode DE of the active element T and a part of the surface of the interlayer insulating layer 120 . It should be noted that, in the present embodiment, the number of the flat layers of the display panel 10 is illustrated by taking two as an example, which does not mean that the present invention is limited to this. In other embodiments, the number of flat layers of the display panel can be adjusted to one or more than three according to different circuit designs or the number of metal conductive layers.

在本實施例中，顯示面板10還可選擇性地包括設置在絕緣層140與平坦層150之間的金屬導電層ML。金屬導電層ML例如包括多個轉接圖案TP和多個導電圖案CP。這些轉接圖案TP各自電性連接於對應的一個接合墊BP1與對應的一個主動元件T的汲極DE之間，而每一個接合墊組的接合墊BP2可經由一個導電圖案CP與對應的一條電源線（未繪示）電性連接。舉例來說，發光元件200的電極211和電極212分別是N電極和P電極，且發光元件200的電極212經由接合墊BP2和導電圖案CP電性連接至一系統高電壓源（OVDD），但不以此為限。In this embodiment, the display panel 10 may optionally further include a metal conductive layer ML disposed between the insulating layer 140 and the flat layer 150 . The metal conductive layer ML includes, for example, a plurality of transfer patterns TP and a plurality of conductive patterns CP. The transfer patterns TP are each electrically connected between a corresponding one of the bonding pads BP1 and a corresponding one of the drain electrodes DE of the active element T, and the bonding pads BP2 of each bonding pad group can be connected to a corresponding one of the bonding pads via a conductive pattern CP. A power cord (not shown) is electrically connected. For example, the electrode 211 and the electrode 212 of the light-emitting element 200 are N and P electrodes, respectively, and the electrode 212 of the light-emitting element 200 is electrically connected to a system high voltage source (OVDD) via the bonding pad BP2 and the conductive pattern CP, but Not limited to this.

基於電性與製程的考量，例如：確保平坦層130不受金屬導電層ML製程的影響，平坦層130和平坦層150之間還可選擇性地設有絕緣層140，此絕緣層140的材料例如包括氮化矽（SiNx）或二氧化矽（SiO ₂）。詳細而言，平坦層130具有沿著方向Z重疊於主動元件T的汲極DE的接觸孔130h，絕緣層140延伸至接觸孔130h內並覆蓋平坦層130定義此接觸孔130h的側壁。轉接圖案TP伸入此接觸孔130h並貫穿絕緣層140以電性連接主動元件T的汲極DE。另一方面，平坦層150具有多個接觸孔150h1和多個接觸孔150h2。每一個接合墊組的接合墊BP1伸入對應的一個接觸孔150h1與對應的一個轉接圖案TP電性連接，而另一個接合墊BP2伸入對應的一個接觸孔150h2與對應的一個導電圖案CP電性連接。 Based on electrical properties and process considerations, for example, to ensure that the flattening layer 130 is not affected by the metal conductive layer ML process, an insulating layer 140 may optionally be provided between the flattening layer 130 and the flattening layer 150. The material of the insulating layer 140 Examples include silicon nitride (SiNx) or silicon dioxide (SiO ₂ ). Specifically, the flat layer 130 has a contact hole 130h overlapping the drain electrode DE of the active device T along the direction Z, and the insulating layer 140 extends into the contact hole 130h and covers the sidewall of the flat layer 130 to define the contact hole 130h. The transfer pattern TP extends into the contact hole 130h and penetrates the insulating layer 140 to electrically connect the drain electrode DE of the active device T. On the other hand, the flat layer 150 has a plurality of contact holes 150h1 and a plurality of contact holes 150h2. The bonding pad BP1 of each bonding pad group extends into a corresponding one of the contact holes 150h1 and is electrically connected to a corresponding one of the transfer patterns TP, while the other bonding pad BP2 extends into a corresponding one of the contact holes 150h2 and a corresponding one of the conductive patterns CP Electrical connection.

特別說明的是，傳統的發光二極體顯示面板一般是在接合墊的設置表面上形成一吸光圖案層來降低顯示側的整體反射率以取得較佳的暗態表現，同時遮擋光線直接照射主動元件的半導體圖案而影響其操作電性。由於此吸光圖案層一般是使用黑色樹脂材料來製作，因此其紅外光波段的穿透率也很小。請同時參照圖3，比較例的吸光圖案層無論是在可見光波段或是紅外光波段的穿透率都明顯小於3%（如圖3的曲線CR2所示）。In particular, the conventional light-emitting diode display panel generally forms a light-absorbing pattern layer on the setting surface of the bonding pad to reduce the overall reflectivity of the display side to achieve better dark state performance, while blocking light from directly irradiating the active The semiconductor pattern of the device affects its operational electrical properties. Since the light-absorbing pattern layer is generally made of black resin material, its transmittance in the infrared wavelength band is also very small. Please refer to FIG. 3 at the same time, the transmittance of the light-absorbing pattern layer of the comparative example is obviously less than 3% in both the visible light band and the infrared light band (as shown by the curve CR2 in FIG. 3 ).

不同於比較例，本實施例的平坦層130和平坦層150對於波長介於380nm至780nm之間的光線的穿透率小於10%，且對於波長大於850nm的光線的穿透率大於20%（如圖3的曲線CR1-1所示）。也就是說，本實施例的這兩個平坦層在可見光波段的穿透率與比較例的吸光圖案層的穿透率相當。因此，可提升顯示面板10的暗態表現。然而，本實施例的平坦層130和平坦層150在波長大於850nm的紅外光波段的穿透率明顯高於比較例的吸光圖案層在該紅外光波段的穿透率。因此，藉由本實施例的這些平坦層在紅外光波段的光穿透特性以及紅外光照明光源的使用，可有效增加顯示面板10的對位標記（alignment mark）和修補區的可視性（visibility），從而提升顯示面板10製程中的對位準確度和修補良率。在一較佳的實施例中，平坦層130和平坦層150對於波長介於380nm至780nm之間的光線的穿透率小於5%。Different from the comparative example, the flattening layer 130 and the flattening layer 150 of this embodiment have a transmittance of less than 10% for light with a wavelength between 380 nm and 780 nm, and a transmittance of more than 20% for light with a wavelength greater than 850 nm ( As shown in the curve CR1-1 of Figure 3). That is to say, the transmittance of the two flat layers in the present embodiment in the visible light band is comparable to the transmittance of the light absorption pattern layer of the comparative example. Therefore, the dark state performance of the display panel 10 can be improved. However, the transmittance of the flattening layer 130 and the flattening layer 150 of the present embodiment in the infrared light band with wavelengths greater than 850 nm is significantly higher than the transmittance of the light absorption pattern layer of the comparative example in the infrared light band. Therefore, the visibility of the alignment marks and repair areas of the display panel 10 can be effectively increased by virtue of the light penetration characteristics of the flat layers in the infrared wavelength band and the use of the infrared illumination light source in the display panel 10 . , thereby improving the alignment accuracy and repair yield in the process of the display panel 10 . In a preferred embodiment, the transmittance of the flattening layer 130 and the flattening layer 150 to light with wavelengths between 380 nm and 780 nm is less than 5%.

請參照圖1及圖2，這兩個平坦層130、150的其中至少一者，例如平坦層150，其材料包括基材151和多個顏料粒子155。這些顏料粒子155分散地設置於基材151內。為了降低這些顏料粒子155對顯示面板10驅動電性的影響，顏料粒子155為具有核層155C（core）和殼層155S（shell）的核殼結構，且殼層155S包覆核層155C。其中，核層155C的材料例如是不包含碳黑的有機黑顏料，而殼層155S的材料包括矽烷（silane）、鈦酸酯（titanate）或硫醇（thiol）。因此，本實施例的平坦層150可具有良好的電性，例如：其電壓保持率（voltage holding ratio，VHR）可大於90%，進而降低對顯示面板10其他膜層的離子汙染風險。此處的電壓保持率例如是利用頻率0.6Hz和電壓準位1V的脈波在溫度60℃下進行量測而得。Referring to FIG. 1 and FIG. 2 , at least one of the two flat layers 130 and 150 , such as the flat layer 150 , is made of a material including a substrate 151 and a plurality of pigment particles 155 . These pigment particles 155 are provided in the base material 151 in a dispersed manner. In order to reduce the influence of these pigment particles 155 on the driving electrical properties of the display panel 10 , the pigment particles 155 have a core-shell structure with a core layer 155C (core) and a shell layer 155S (shell), and the shell layer 155S covers the core layer 155C. The material of the core layer 155C is, for example, an organic black pigment without carbon black, and the material of the shell layer 155S includes silane, titanate or thiol. Therefore, the flat layer 150 of this embodiment can have good electrical properties, for example, its voltage holding ratio (VHR) can be greater than 90%, thereby reducing the risk of ion contamination to other layers of the display panel 10 . The voltage holding ratio here is measured at a temperature of 60° C. using a pulse wave with a frequency of 0.6 Hz and a voltage level of 1 V, for example.

然而，本發明不限於此。在其他實施例中，殼層155S的良好包覆性，可增加核層155C材料的選用彈性。因此，其顏料粒子155的核層155C材料也可以選用金屬離子與碳黑含量低的材料。另一方面，為了增加多個顏料粒子155於基材151中的分散均勻度，顏料粒子155的殼體155S還可選擇性地設有分散劑155D（dispersant）。在本實施例中，顏料粒子155的殼層155S例如是有機聚合物殼層，而形成此聚合物殼層的方法可包括：將高分子單體吸附於核層155C表面後進行聚合反應、異相凝集聚合反應（heterocoagulation-polymerization）、乳化聚合（emulsion polymerization）或逐層自組裝技術，但不以此為限。However, the present invention is not limited to this. In other embodiments, the good encapsulation property of the shell layer 155S can increase the flexibility of material selection of the core layer 155C. Therefore, the material of the core layer 155C of the pigment particles 155 can also be selected from materials with low content of metal ions and carbon black. On the other hand, in order to increase the dispersion uniformity of the plurality of pigment particles 155 in the base material 151 , the shell 155S of the pigment particles 155 may optionally be provided with a dispersant 155D (dispersant). In this embodiment, the shell layer 155S of the pigment particles 155 is, for example, an organic polymer shell layer, and the method for forming the polymer shell layer may include: adsorbing a polymer monomer on the surface of the core layer 155C and then performing a polymerization reaction, a heterogeneous phase Heterocoagulation-polymerization, emulsion polymerization or layer-by-layer self-assembly technology, but not limited thereto.

特別注意的是，在本實施例中，平坦層130和平坦層150的材料可選擇性地不同，但本發明不以此為限。舉例來說，平坦層130的材質例如是有機絕緣材料，有機絕緣材料可包括聚亞醯胺、聚酯、苯並環丁烯（benzocyclobutene，BCB）、聚甲基丙烯酸甲酯（polymethylmethacrylate，PMMA）、聚乙烯苯酚（poly(4-vinylphenol)，PVP）、聚乙烯醇（polyvinyl alcohol，PVA）、聚四氟乙烯（polytetrafluoroethene，PTFE）、六甲基二矽氧烷（hexamethyldisiloxane，HMDSO）。It should be noted that, in this embodiment, the materials of the flattening layer 130 and the flattening layer 150 may be selectively different, but the invention is not limited thereto. For example, the material of the flat layer 130 is, for example, an organic insulating material, and the organic insulating material may include polyimide, polyester, benzocyclobutene (BCB), polymethylmethacrylate (PMMA) , poly(4-vinylphenol, PVP), polyvinyl alcohol (PVA), polytetrafluoroethylene (PTFE), hexamethyldisiloxane (HMDSO).

進一步而言，由於平坦層150需設有前述的多個接觸孔151h1、151h2來確保多個接合墊和金屬導電層ML的電性連接關係，因此平坦層150在微影蝕刻製程中的圖案化（例如：開洞）能力不能太差。此處較佳的圖案化能力係指平坦層150的圖案化結構的空間解析度較高。Further, since the flat layer 150 needs to be provided with the aforementioned plurality of contact holes 151h1 and 151h2 to ensure the electrical connection between the plurality of bonding pads and the metal conductive layer ML, the patterning of the flat layer 150 in the lithography etching process (Example: opening) The ability should not be too bad. The better patterning capability here refers to the higher spatial resolution of the patterned structure of the flat layer 150 .

舉例來說，用來形成平坦層150的材料層，其組成可包括聚合物（polymer）PM、單體（monomer）、光起始劑（initiator）、有機黑色顏料（pigment）、溶劑（solvent）及/或添加劑（additve），其中添加劑例如是促進劑（promoter）、固化促進劑（curing promoter）及/或表面活性劑。為了取得較佳的圖案化能力（例如開洞能力），上述材料層的多個聚合物PM的重量百分濃度與多個單體MM1~MM3的重量百分濃度的比值於曝光前要介於3.5至5之間，而於曝光後要介於350~500之間。需說明的是，在本實施例中，單體的種類是以三個為例，即單體MM1、單體MM2和單體MM3（如圖2所示），但不以此為限。在其他實施例中，平坦層150的材料層所包含的單體種類數量可根據實際的製程需求或產品設計而調整。For example, the material layer used to form the flat layer 150 may include a polymer PM, a monomer, a photoinitiator, an organic black pigment, and a solvent. and/or additives, wherein the additives are, for example, promoters, curing promoters and/or surfactants. In order to achieve better patterning ability (eg, hole opening ability), the ratio of the weight percent concentration of the plurality of polymers PM to the weight percent concentration of the plurality of monomers MM1 to MM3 in the material layer should be between Between 3.5 and 5, and between 350 and 500 after exposure. It should be noted that, in this embodiment, three types of monomers are used as an example, namely, monomer MM1, monomer MM2 and monomer MM3 (as shown in FIG. 2 ), but not limited thereto. In other embodiments, the number of types of monomers included in the material layer of the planarization layer 150 can be adjusted according to actual process requirements or product design.

圖4示出本實施例的平坦層150經由微影蝕刻製程所形成的接觸孔（through hole），其實際尺寸W1×W2為28.5μm×28.5μm，與曝光製程中所使用的光罩圖案尺寸30μm×30μm相當。也就是說，透過上述聚合物PM與單體MM1~MM3的組成配比，可讓平坦層150具有較佳的圖案化能力。FIG. 4 shows a through hole formed by the lithography etching process of the planar layer 150 of the present embodiment, the actual size W1×W2 of which is 28.5 μm×28.5 μm, and the size of the mask pattern used in the exposure process 30μm × 30μm is equivalent. That is to say, through the composition ratio of the polymer PM and the monomers MM1 to MM3, the planarization layer 150 can have better patterning ability.

特別一提的是，由於本實施例的平坦層150是選用包含有機黑色顏料的光阻材料來製作，因此可省去傳統發光二極體顯示面板的吸光圖案層的製作。換句話說，還可縮減顯示面板的製程工序數。In particular, since the flat layer 150 of this embodiment is made of a photoresist material containing organic black pigments, the fabrication of the light absorbing pattern layer of the conventional light emitting diode display panel can be omitted. In other words, the number of manufacturing steps of the display panel can also be reduced.

以下將列舉另一些實施例以詳細說明本揭露，其中相同的構件將標示相同的符號，並且省略相同技術內容的說明，省略部分請參考前述實施例，以下不再贅述。Hereinafter, other embodiments will be listed to describe the present disclosure in detail, wherein the same components will be marked with the same symbols, and the description of the same technical content will be omitted.

圖5是本發明的另一實施例的顯示面板的剖視示意圖。圖6是圖5的兩個平坦層和一比較例的吸光圖案層的穿透率對波長的曲線圖。圖7是圖5的平坦層和一些比較例的彩色濾光層的相對介電常數對頻率的折線圖。圖8是圖5的平坦層和一些比較例的彩色濾光層的介電損耗對頻率的折線圖。5 is a schematic cross-sectional view of a display panel according to another embodiment of the present invention. FIG. 6 is a graph of transmittance versus wavelength for the two flat layers of FIG. 5 and a light absorbing pattern layer of a comparative example. FIG. 7 is a line graph of relative permittivity versus frequency for the flattening layer of FIG. 5 and some comparative color filter layers. 8 is a line graph of dielectric loss versus frequency for the flattening layer of FIG. 5 and some comparative example color filter layers.

請參照圖5，本實施例的顯示面板10A與圖1的顯示面板10的差異在於：顯示面板10A的平坦層130A也可選用平坦層150的材料來製作。有關平坦層150的材料組成說明請參見前述實施例的相關段落，於此便不再贅述。Referring to FIG. 5 , the difference between the display panel 10A of this embodiment and the display panel 10 of FIG. 1 is that the flat layer 130A of the display panel 10A can also be made of the material of the flat layer 150 . For the description of the material composition of the flat layer 150, please refer to the relevant paragraphs of the foregoing embodiments, and details are not repeated here.

由於本實施例的平坦層130A採用與平坦層150相同的材料組成，因此兩平坦層130A、150的光穿透特性相似於顯示面板10的兩平坦層130、150的光穿透特性。請同時參照圖6，本實施例的平坦層130和平坦層150對於波長介於380nm至780nm之間的光線的穿透率可小於10%，且對於波長大於850nm的光線的穿透率大於20%（如曲線CR1-2所示）。也就是說，本實施例的這兩個平坦層130A、150在可見光波段的穿透率與比較例的吸光圖案層的穿透率（如曲線CR2所示）相當。因此，可提升顯示面板10A的暗態表現。在一較佳的實施例中，平坦層130A和平坦層150對波長介於380nm至780nm之間的光線的穿透率小於5%。Since the flat layer 130A in this embodiment is composed of the same material as the flat layer 150 , the light transmission characteristics of the two flat layers 130A and 150 are similar to those of the two flat layers 130 and 150 of the display panel 10 . Please refer to FIG. 6 at the same time, the transmittance of the flattening layer 130 and the flattening layer 150 of the present embodiment to light with wavelengths between 380 nm and 780 nm may be less than 10%, and the transmittance of light with wavelengths greater than 850 nm is greater than 20% % (as shown by curve CR1-2). That is to say, the transmittance of the two flat layers 130A and 150 in the present embodiment in the visible light band is comparable to the transmittance of the light absorption pattern layer of the comparative example (as shown by the curve CR2 ). Therefore, the dark state performance of the display panel 10A can be improved. In a preferred embodiment, the transmittance of the flattening layer 130A and the flattening layer 150 to light with wavelengths between 380 nm and 780 nm is less than 5%.

然而，不同於比較例的吸光圖案層，本實施例的平坦層130A和平坦層150在波長大於850nm的紅外光波段的穿透率明顯高於比較例的吸光圖案層在該紅外光波段的穿透率。因此，藉由本實施例的這些平坦層在紅外光波段的光穿透特性以及紅外光照明光源的使用，可有效增加顯示面板10A的對位標記（alignment mark）和修補區的可視性（visibility），從而提升顯示面板10A製程中的對位準確度和修補良率。However, unlike the light absorption pattern layer of the comparative example, the transmittance of the flat layer 130A and the flat layer 150 of the present embodiment in the infrared light band with a wavelength greater than 850 nm is significantly higher than that of the light absorption pattern layer of the comparative example in the infrared light band transmittance. Therefore, the visibility of the alignment marks and the repair area of the display panel 10A can be effectively increased by the light penetration characteristics of the flat layers in the infrared wavelength band and the use of the infrared illumination light source in the display panel 10A , thereby improving the alignment accuracy and repair yield in the process of the display panel 10A.

特別注意的是，由於顯示面板10A的平坦層130A是直接覆蓋主動元件T，因此平坦層130A需具有良好的電性方可確保主動元件T的操作電性不受影響。舉例來說，平坦層130A除了如同前述平坦層150的電壓保持率（VHR）要大於90%之外，平坦層130A和平坦層150的相對介電常數和介電損耗的頻率相依性也需要滿足特定的條件。It should be noted that, since the flat layer 130A of the display panel 10A directly covers the active element T, the flat layer 130A needs to have good electrical properties to ensure that the operation electrical properties of the active element T are not affected. For example, in addition to the voltage holding ratio (VHR) of the flattening layer 130A being greater than 90%, the frequency dependence of the relative permittivity and the dielectric loss of the flattening layer 130A and the flattening layer 150 also needs to be satisfied. specific conditions.

在本實施例中，這兩個平坦層130A、150在60Hz至1MHz的頻率範圍內的相對介電常數小於6%，且相對介電常數的最大變化率要小於7%（如圖7的曲線E1所示）。此處的最大變化率是指平坦層分別在頻率60Hz與頻率1MHz下的兩相對介電常數差值與平坦層在頻率1MHz下的相對介電常數的百分比值。另一方面，這兩個平坦層130A、150在60Hz至1MHz的頻率範圍內的介電損耗（Dissipation）的最大變化率要小於40%（如圖8的曲線E1所示）。此處的最大變化率是指平坦層分別在頻率60Hz與頻率1MHz下的兩介電損耗差值與平坦層在頻率1MHz下的介電損耗的百分比值。In this embodiment, the relative permittivity of the two flat layers 130A and 150 in the frequency range of 60Hz to 1MHz is less than 6%, and the maximum change rate of the relative permittivity is less than 7% (as shown in the curve in FIG. 7 ). shown in E1). The maximum rate of change here refers to the percentage value of the difference between the relative permittivity of the flat layer at a frequency of 60 Hz and a frequency of 1 MHz and the relative permittivity of the flat layer at a frequency of 1 MHz. On the other hand, the maximum change rate of the dielectric loss (Dissipation) of the two flat layers 130A and 150 in the frequency range of 60 Hz to 1 MHz is less than 40% (as shown by the curve E1 in FIG. 8 ). The maximum rate of change here refers to the difference between the two dielectric losses of the flat layer at a frequency of 60 Hz and a frequency of 1 MHz, respectively, and the percentage value of the dielectric loss of the flat layer at a frequency of 1 MHz.

在一些比較例中，顯示面板的平坦層可選用不同顏色的色阻材料來製作。亦即，在該些比較例中，顯示面板為COA（color-filter on array）的設計架構。圖7的曲線C1、曲線C2和曲線C3分別示出比較例的三種平坦層材料在不同頻率下的相對介電常數分布，而圖8的曲線C1、曲線C2和曲線C3分別示出比較例的三種平坦層材料在不同頻率下的介電損耗分布，其中曲線C1、曲線C2和曲線C3對應的三種平坦層分別是選用紅色色阻、綠色色阻和藍色色阻來製作。In some comparative examples, the flat layer of the display panel can be made of color resist materials of different colors. That is, in these comparative examples, the display panel is a COA (color-filter on array) design structure. Curve C1, curve C2 and curve C3 of FIG. 7 respectively show the relative permittivity distributions of the three flat layer materials of the comparative example at different frequencies, while curve C1, curve C2 and curve C3 of FIG. The dielectric loss distributions of three flat layer materials at different frequencies, wherein the three flat layers corresponding to curve C1, curve C2 and curve C3 are made of red color resistance, green color resistance and blue color resistance respectively.

由圖7可知，選用綠色色阻製作而成的平坦層，其在60Hz至1MHz的頻率範圍內的相對介電常數的最大變化率大於11%（如圖7的曲線C2所示）。相反地，選用紅色色阻、藍色色阻或本實施例包含有機黑色顏料的光阻材料製作而成的平坦層，其在60Hz至1MHz的頻率範圍內的相對介電常數的最大變化率都小於7%（如圖7的曲線E1、曲線C1和曲線C3所示）。It can be seen from Figure 7 that the maximum change rate of the relative permittivity in the frequency range from 60Hz to 1MHz for the flat layer made of the green color resist is greater than 11% (as shown by the curve C2 in Figure 7). On the contrary, for the flat layer made of red color resist, blue color resist or photoresist material containing organic black pigment in this embodiment, the maximum change rate of the relative permittivity in the frequency range of 60Hz to 1MHz is less than 7% (as shown by curve E1, curve C1 and curve C3 in Figure 7).

由圖8可知，選用紅色色阻、藍色色阻或綠色色阻製作而成的平坦層，其在60Hz至1MHz的頻率範圍內的介電損耗的最大變化率都大於40%（如圖8的曲線C1、曲線C2和曲線C3所示）。其中，以綠色色阻製作而成的平坦層，其在60Hz至1MHz的頻率範圍內的介電損耗的最大變化率更大於55%。也因此，在選用綠色色阻製作平坦層的比較例中，其離子汙染的現象較為嚴重並且明顯地影響主動元件T的操作電性。It can be seen from Figure 8 that the maximum change rate of the dielectric loss in the frequency range of 60Hz to 1MHz for the flat layer made of red color resistance, blue color resistance or green color resistance is greater than 40% (as shown in Figure 8). Curve C1, Curve C2 and Curve C3). Among them, for the flat layer made of green color resist, the maximum change rate of the dielectric loss in the frequency range of 60Hz to 1MHz is greater than 55%. Therefore, in the comparative example in which the green color resist is used to form the flat layer, the phenomenon of ion contamination is more serious and affects the operating electrical performance of the active element T obviously.

相反地，選用本實施例包含有機黑色顏料的光阻材料製作而成的平坦層，其在60Hz至1MHz的頻率範圍內的介電損耗的最大變化率小於40%，甚至是小於20%（如圖8的曲線E1所示）。也因此，本實施的平坦層130A（或平坦層150），其離子汙染的現象並不明顯，可確保主動元件T的操作電性。On the contrary, for the flat layer made of the photoresist material containing organic black pigment in this embodiment, the maximum change rate of the dielectric loss in the frequency range of 60Hz to 1MHz is less than 40%, even less than 20% (such as Curve E1 in Figure 8). Therefore, in the flat layer 130A (or the flat layer 150 ) of the present embodiment, the phenomenon of ion contamination is not obvious, and the operational electrical performance of the active element T can be ensured.

圖9是本發明的又一實施例的顯示面板的剖視示意圖。圖10是圖9的兩個平坦層和一比較例的吸光圖案層的穿透率對波長的曲線圖。請參照圖9，本實施例的顯示面板10B與圖5的顯示面板10A的差異在於：顯示面板10B的平坦層130B是選用色阻材料來製作。也就是說，平坦層130B同時是顯示面板10B的彩色濾光層。特別注意的是，平坦層150和彩色濾光層（即平坦層130B）的組合對波長介於380nm至780nm之間的光線的穿透率小於2%。FIG. 9 is a schematic cross-sectional view of a display panel according to still another embodiment of the present invention. FIG. 10 is a graph of transmittance versus wavelength for the two flat layers of FIG. 9 and a light absorbing pattern layer of a comparative example. Referring to FIG. 9 , the difference between the display panel 10B of the present embodiment and the display panel 10A of FIG. 5 is that the flat layer 130B of the display panel 10B is made of a color resist material. That is, the flat layer 130B is also the color filter layer of the display panel 10B. It is particularly noted that the combination of the flattening layer 150 and the color filter layer (ie, the flattening layer 130B) has a transmittance of less than 2% for light with wavelengths between 380 nm and 780 nm.

舉例來說，在本實施例中，平坦層130B是選用藍色色阻製作而成。亦即，本實施例的平坦層130B為藍色濾光層，且平坦層150和此藍色濾光層（即平坦層130B）的組合對波長介於380nm至780nm之間的光線的穿透率可小於1%（如圖10的曲線CR1-3所示）。據此，以進一步提升顯示面板10B的暗態表現及其主動元件T的操作穩定性。For example, in this embodiment, the flat layer 130B is made of blue color resist. That is, the flat layer 130B in this embodiment is a blue filter layer, and the combination of the flat layer 150 and the blue filter layer (ie, the flat layer 130B) penetrates light with a wavelength between 380 nm and 780 nm The rate can be less than 1% (as shown by curve CR1-3 in Figure 10). Accordingly, the dark state performance of the display panel 10B and the operation stability of the active element T of the display panel 10B can be further improved.

綜上所述，在本發明的一實施例的顯示面板中，透過整面性地設置在接合墊與基板之間的平坦層對於波長大於850nm的紅外光的穿透率大於20%，可有效增加基板上的對位標記（alignment mark）和修補區的可視性，從而提升製程的對位準確度和修補良率。另一方面，透過此平坦層對於可見光的穿透率小於5%，除了可增加顯示面板的暗態對比外，還能縮減顯示面板的製程工序數。To sum up, in the display panel according to an embodiment of the present invention, the transmittance to infrared light with a wavelength greater than 850 nm through the flat layer disposed between the bonding pads and the substrate over the entire surface is greater than 20%, which can effectively Increase the visibility of alignment marks and repair areas on the substrate, thereby improving the alignment accuracy and repair yield of the process. On the other hand, the transmittance of visible light through the flat layer is less than 5%, which not only increases the dark state contrast of the display panel, but also reduces the number of manufacturing steps of the display panel.

10、10A、10B:顯示面板 100:基板 110:閘絕緣層 120:層間絕緣層 121、122:絕緣材料層 130、130A、130B、150:平坦層 130h、150h1、150h2:接觸孔 140:絕緣層 151:基材 155:顏料粒子 155C:核層 155D:分散劑 155S:殼層 200:發光元件 211、212:電極 BP1、BP2:接合墊 CH:通道區 CP:導電圖案 DE:汲極 DR:汲極區 GE:閘極 ML:金屬導電層 MM1、MM2、MM3:單體 PM:聚合物 SC:半導體圖案 SE:源極 SR:源極區 T:主動元件 TP:轉接圖案 Z:方向 10, 10A, 10B: Display panel 100: Substrate 110: Gate insulating layer 120: interlayer insulating layer 121, 122: insulating material layer 130, 130A, 130B, 150: flat layer 130h, 150h1, 150h2: Contact holes 140: Insulation layer 151: Substrate 155: Pigment Particles 155C: nuclear layer 155D: Dispersant 155S: Shell 200: Light-emitting element 211, 212: Electrodes BP1, BP2: Bond pads CH: Channel area CP: Conductive Pattern DE: drain DR: drain region GE: gate ML: Metal Conductive Layer MM1, MM2, MM3: Monomer PM: polymer SC: Semiconductor pattern SE: source SR: source region T: Active element TP: transfer pattern Z: direction

圖1是本發明的一實施例的顯示面板的剖視示意圖。圖2是圖1的平坦層的材料組成的示意圖。圖3是圖1的兩個平坦層和一比較例的吸光圖案層的穿透率對波長的曲線圖。圖4是圖1的平坦層的接觸孔的俯視圖。圖5是本發明的另一實施例的顯示面板的剖視示意圖。圖6是圖5的兩個平坦層和一比較例的吸光圖案層的穿透率對波長的曲線圖。圖7是圖5的平坦層和一些比較例的彩色濾光層的相對介電常數對頻率的折線圖。圖8是圖5的平坦層和一些比較例的彩色濾光層的介電損耗對頻率的折線圖。圖9是本發明的又一實施例的顯示面板的剖視示意圖。圖10是圖9的兩個平坦層和一比較例的吸光圖案層的穿透率對波長的曲線圖。 FIG. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the present invention. FIG. 2 is a schematic diagram of the material composition of the planarization layer of FIG. 1 . FIG. 3 is a graph of transmittance versus wavelength for two flat layers of FIG. 1 and a light absorbing pattern layer of a comparative example. FIG. 4 is a plan view of a contact hole of the flat layer of FIG. 1 . 5 is a schematic cross-sectional view of a display panel according to another embodiment of the present invention. FIG. 6 is a graph of transmittance versus wavelength for the two flat layers of FIG. 5 and a light absorbing pattern layer of a comparative example. FIG. 7 is a line graph of relative permittivity versus frequency for the flattening layer of FIG. 5 and some comparative color filter layers. 8 is a line graph of dielectric loss versus frequency for the flattening layer of FIG. 5 and some comparative example color filter layers. FIG. 9 is a schematic cross-sectional view of a display panel according to still another embodiment of the present invention. FIG. 10 is a graph of transmittance versus wavelength for the two flat layers of FIG. 9 and a light absorbing pattern layer of a comparative example.

10:顯示面板 10: Display panel

100:基板 100: Substrate

110:閘絕緣層 110: Gate insulating layer

120:層間絕緣層 120: interlayer insulating layer

121、122:絕緣材料層 121, 122: insulating material layer

130、150:平坦層 130, 150: flat layer

130h、150h1、150h2:接觸孔 130h, 150h1, 150h2: Contact holes

140:絕緣層 140: Insulation layer

200:發光元件 200: Light-emitting element

211、212:電極 211, 212: Electrodes

BP1、BP2:接合墊 BP1, BP2: Bond pads

CH:通道區 CH: Channel area

CP:導電圖案 CP: Conductive Pattern

DE:汲極 DE: drain

DR:汲極區 DR: drain region

GE:閘極 GE: gate

ML:金屬導電層 ML: Metal Conductive Layer

SC:半導體圖案 SC: Semiconductor pattern

SE:源極 SE: source

SR:源極區 SR: source region

T:主動元件 T: Active element

TP:轉接圖案 TP: transfer pattern

Z:方向 Z: direction

Claims

一種顯示面板，包括：一基板；多個主動元件，設置於該基板上；至少一平坦層，整面性地覆蓋該些主動元件與該基板，且具有多個接觸孔，該至少一平坦層對波長大於850nm的光線的穿透率大於20%，且對於波長介於380nm至780nm之間的光線的穿透率小於5%；多個接合墊，設置於該至少一平坦層上，且經由該些接觸孔與該些主動元件電性連接；以及多個發光元件，電性接合於該些接合墊上。 A display panel, comprising: a substrate; a plurality of active elements arranged on the substrate; At least one flat layer covers the active elements and the substrate on the whole surface, and has a plurality of contact holes, the transmittance of the at least one flat layer to light with a wavelength greater than 850 nm is greater than 20%, and for wavelengths greater than 380 nm The transmittance of light between 780nm is less than 5%; a plurality of bonding pads disposed on the at least one flat layer and electrically connected to the active elements through the contact holes; and A plurality of light-emitting elements are electrically connected to the bonding pads.

如請求項1所述的顯示面板，其中該至少一平坦層的相對介電常數小於6。The display panel of claim 1, wherein the relative permittivity of the at least one flat layer is less than 6.

如請求項1所述的顯示面板，其中該至少一平坦層於60Hz至1MHz的頻率範圍內的相對介電常數的最大變化率小於7%。The display panel of claim 1, wherein a maximum rate of change of the relative permittivity of the at least one flat layer within a frequency range of 60 Hz to 1 MHz is less than 7%.

如請求項1所述的顯示面板，其中該至少一平坦層於60Hz至1MHz的頻率範圍內的介電損耗的最大變化率小於40%。The display panel of claim 1, wherein a maximum rate of change of dielectric loss of the at least one flat layer in a frequency range of 60 Hz to 1 MHz is less than 40%.

如請求項1所述的顯示面板，其中該些主動元件為多個低溫多晶矽薄膜電晶體。The display panel of claim 1, wherein the active elements are a plurality of low temperature polysilicon thin film transistors.

如請求項1所述的顯示面板，更包括：一金屬導電層，電性連接該些主動元件和該些接合墊，其中該至少一平坦層包括一第一平坦層與一第二平坦層，該金屬導電層設置在該第一平坦層與該第二平坦層之間。 The display panel according to claim 1, further comprising: a metal conductive layer electrically connecting the active elements and the bonding pads, wherein the at least one flattening layer includes a first flattening layer and a second flattening layer, and the metal conductive layer is disposed on the first flattening layer and the between the second flat layer.

如請求項1所述的顯示面板，更包括：一彩色濾光層，設置於該至少一平坦層與該些主動元件之間。 The display panel according to claim 1, further comprising: A color filter layer is disposed between the at least one flat layer and the active elements.

如請求項7所述的顯示面板，其中該至少一平坦層和該彩色濾光層對波長介於380nm至780nm之間的光線的穿透率小於2%。The display panel of claim 7, wherein the transmittance of the at least one flat layer and the color filter layer to light with wavelengths between 380 nm and 780 nm is less than 2%.

如請求項8所述的顯示面板，其中該彩色濾光層為一藍色濾光層，且該至少一平坦層和該藍色濾光層對波長介於380nm至780nm之間的光線的穿透率小於1%。The display panel as claimed in claim 8, wherein the color filter layer is a blue filter layer, and the at least one flat layer and the blue filter layer transmit light with wavelengths between 380 nm and 780 nm. The transmittance is less than 1%.

如請求項1所述的顯示面板，其中該至少一平坦層的電壓保持率（Voltage Holding Ratio，VHR）大於90%。The display panel of claim 1, wherein a voltage holding ratio (VHR) of the at least one flat layer is greater than 90%.

如請求項1所述的顯示面板，其中該至少一平坦層的材料包括：一基材；以及多個顏料粒子，分散地設置於該基材內，該些顏料粒子的材料包括有機黑顏料。 The display panel according to claim 1, wherein the material of the at least one flat layer comprises: a substrate; and A plurality of pigment particles are dispersedly arranged in the base material, and the materials of the pigment particles include organic black pigment.

如請求項11所述的顯示面板，其中各該些顏料粒子為具有一核層與一殼層的核殼結構，該殼層包覆該核層，且該殼層的材料包括矽烷（silane）、鈦酸酯（titanate）或硫醇（thiol）。The display panel of claim 11, wherein each of the pigment particles has a core-shell structure having a core layer and a shell layer, the shell layer covers the core layer, and the material of the shell layer includes silane (silane) , titanate or thiol.

如請求項11所述的顯示面板，其中該基材的材料包括多個聚合物（polymer）和多個單體（monomer），且該基材的該些聚合物的重量百分濃度與該些單體的重量百分濃度的比值於曝光前介於3.5至5之間，而於曝光後介於350~500之間。The display panel according to claim 11, wherein the material of the substrate comprises a plurality of polymers and a plurality of monomers, and the weight percent concentration of the polymers of the substrate is the same as the weight of the polymers The ratio of the weight percent concentration of the monomers is between 3.5 and 5 before exposure, and between 350 and 500 after exposure.

一種顯示面板，包括：一基板；多個主動元件，設置於該基板上；至少一平坦層，整面性地覆蓋該些主動元件與該基板，且具有多個接觸孔，該至少一平坦層對波長大於850nm的光線的穿透率大於20%，且包括：一基材；以及多個顏料粒子，分散地設置於該基材內，該些顏料粒子的材料包括有機黑顏料，各該些顏料粒子為具有一核層與一殼層的核殼結構，該殼層包覆該核層；多個接合墊，設置於該至少一平坦層上，且經由該些接觸孔與該些主動元件電性連接；以及多個發光元件，電性接合於該些接合墊上。 A display panel, comprising: a substrate; a plurality of active elements arranged on the substrate; At least one flat layer covers the active elements and the substrate on the entire surface, and has a plurality of contact holes, the transmittance of the at least one flat layer to light with a wavelength greater than 850 nm is greater than 20%, and includes: a substrate; and A plurality of pigment particles are dispersedly arranged in the base material, the materials of the pigment particles include organic black pigment, each of the pigment particles has a core-shell structure with a core layer and a shell layer, and the shell layer covers the nuclear layer; a plurality of bonding pads disposed on the at least one flat layer and electrically connected to the active elements through the contact holes; and A plurality of light-emitting elements are electrically connected to the bonding pads.

如請求項14所述的顯示面板，其中該至少一平坦層的相對介電常數小於6。The display panel of claim 14, wherein the relative permittivity of the at least one flat layer is less than 6.

如請求項14所述的顯示面板，其中該至少一平坦層於60Hz至1MHz的頻率範圍內的相對介電常數的最大變化率小於7%。The display panel of claim 14, wherein a maximum rate of change of the relative permittivity of the at least one flat layer within a frequency range of 60 Hz to 1 MHz is less than 7%.

如請求項14所述的顯示面板，其中該至少一平坦層於60Hz至1MHz的頻率範圍內的介電損耗的最大變化率小於40%。The display panel of claim 14, wherein a maximum rate of change of dielectric loss of the at least one flat layer in a frequency range of 60 Hz to 1 MHz is less than 40%.

如請求項14所述的顯示面板，其中該至少一平坦層對於波長介於380nm至780nm之間的光線的穿透率小於5%。The display panel of claim 14, wherein the transmittance of the at least one flat layer to light with wavelengths between 380 nm and 780 nm is less than 5%.

如請求項14所述的顯示面板，更包括：一彩色濾光層，設置於該至少一平坦層與該些主動元件之間，且該至少一平坦層和該彩色濾光層對波長介於380nm至780nm之間的光線的穿透率小於2%。 The display panel according to claim 14, further comprising: A color filter layer is disposed between the at least one flat layer and the active elements, and the transmittance of the at least one flat layer and the color filter layer to light with wavelengths between 380 nm and 780 nm is less than 2 %.

如請求項19所述的顯示面板，其中該彩色濾光層為一藍色濾光層，且該至少一平坦層和該藍色濾光層對波長介於380nm至780nm之間的光線的穿透率小於1%。The display panel of claim 19, wherein the color filter layer is a blue filter layer, and the at least one flat layer and the blue filter layer transmit light with wavelengths between 380 nm and 780 nm. The transmittance is less than 1%.

如請求項14所述的顯示面板，其中該基材的材料包括多個聚合物（polymer）和多個單體（monomer），且該基材的該些聚合物的重量百分濃度與該些單體的重量百分濃度的比值於曝光前介於3.5至5之間，而於曝光後介於350~500之間。The display panel of claim 14, wherein the material of the substrate comprises a plurality of polymers and a plurality of monomers, and the weight percent concentration of the polymers of the substrate is the same as the weight percentage of the polymers The ratio of the weight percent concentration of the monomers is between 3.5 and 5 before exposure, and between 350 and 500 after exposure.