TWI761048B - Display device - Google Patents
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本發明是有關於一種顯示裝置,且特別是有關於一種包含兩個顯示面板的顯示裝置。 The present invention relates to a display device, and more particularly, to a display device including two display panels.
近幾年,為了增加顯示裝置的亮暗對比度,常將光閘面板疊加於彩色顯示面板上。光閘面板是一種能夠控制光線的通過與否的面板。在不希望光線通過的部分(例如顯示畫面的黑色部分),光閘面板能阻擋光線,而在希望光線通過的部分(例如顯示畫面的彩色部分),光閘面板能讓光線通過,藉此能增加顯示裝置的亮暗對比度。 In recent years, in order to increase the light-dark contrast ratio of a display device, a shutter panel is often superimposed on a color display panel. A shutter panel is a panel that controls the passage of light. In the part where the light is not expected to pass through (such as the black part of the display screen), the shutter panel can block the light, and in the part where the light is expected to pass through (such as the color part of the display screen), the shutter panel allows the light to pass through, thereby allowing the light to pass through. Increases the light and dark contrast of the display device.
本發明提供一種顯示裝置,能改善光閘面板造成顯示畫面出現網狀紋路的問題。 The present invention provides a display device, which can improve the problem of mesh-like lines appearing on the display screen caused by the shutter panel.
本發明提供一種顯示裝置,能改善光閘面板解析度不足的問題。 The present invention provides a display device capable of improving the problem of insufficient resolution of a shutter panel.
本發明的一實施例提供一種顯示裝置。顯示裝置包括彩 色顯示面板以及光閘面板。彩色顯示面板包括多條第一掃描線、多條第一資料線以及多個第一畫素。第一畫素電性連接至第一掃描線以及第一資料線。光閘面板重疊於彩色顯示面板。光閘面板包括多條第二掃描線、多條第二資料線、多個第二畫素以及遮光結構。第二畫素電性連接至第二掃描線以及第二資料線。相鄰的兩條掃描線以及相鄰的兩條資料線定義出畫素區。遮光結構包括多個掃描線遮光部、多個資料線遮光部、多個第一部分以及多個第二部分。掃描線遮光部重疊且平行於第二掃描線。各掃描線遮光部的寬度為W1。資料線遮光部重疊且平行於第二資料線。各資料線遮光部的寬度為W2。第一部分平行於掃描線遮光部,且重疊於畫素區。各第一部的寬度為Wa,0.8W1<Wa<1.2W1。第二部分平行於資料線遮光部,且疊於畫素區。各第二部分的寬度為Wb,0.8W2<Wb<1.2W2。 An embodiment of the present invention provides a display device. Display device includes color color display panel and shutter panel. The color display panel includes a plurality of first scan lines, a plurality of first data lines and a plurality of first pixels. The first pixel is electrically connected to the first scan line and the first data line. The shutter panel overlaps the color display panel. The shutter panel includes a plurality of second scan lines, a plurality of second data lines, a plurality of second pixels and a light shielding structure. The second pixel is electrically connected to the second scan line and the second data line. Two adjacent scan lines and two adjacent data lines define a pixel area. The light shielding structure includes a plurality of scan line light shielding parts, a plurality of data line light shielding parts, a plurality of first parts and a plurality of second parts. The scan line light shielding portion overlaps and is parallel to the second scan line. The width of each scanning line light shielding portion is W1. The data line shading portion overlaps and is parallel to the second data line. The width of each data line light-shielding portion is W2. The first portion is parallel to the scan line shielding portion and overlaps the pixel region. The width of each first portion is Wa, 0.8W1<Wa<1.2W1. The second portion is parallel to the data line shading portion and overlapped with the pixel area. The width of each second portion is Wb, 0.8W2<Wb<1.2W2.
本發明的一實施例提供一種顯示裝置。顯示裝置包括彩色顯示面板以及光閘面板。彩色顯示面板包括多條第一掃描線、多條第一資料線以及多個第一畫素。第一畫素電性連接至第一掃描線以及第一資料線。光閘面板重疊於彩色顯示面板。光閘面板包括多條第二掃描線、多條第二資料線、多個第二畫素以及遮光結構。第二畫素電性連接至第二掃描線以及第二資料線。相鄰的兩條第二掃描線與相鄰個兩條第二資料線定義出畫素區。遮光結構包括多個掃描線遮光部、多個第一部分、多個資料線遮光部以及多個第二部分。掃描線遮光部以及第一部分平行於第二掃描 線。資料線遮光部以及第二部分平行於第二資料線。掃描線遮光部與資料線遮光部分別重疊於第二掃描線與第二資料線。第一部分與第二部分重疊於畫素區。第一部分以及第二部分將各畫素區定義成n個區域,其中n為6或9。 An embodiment of the present invention provides a display device. The display device includes a color display panel and a shutter panel. The color display panel includes a plurality of first scan lines, a plurality of first data lines and a plurality of first pixels. The first pixel is electrically connected to the first scan line and the first data line. The shutter panel overlaps the color display panel. The shutter panel includes a plurality of second scan lines, a plurality of second data lines, a plurality of second pixels and a light shielding structure. The second pixel is electrically connected to the second scan line and the second data line. Two adjacent second scan lines and two adjacent second data lines define a pixel area. The light shielding structure includes a plurality of scan line light shielding parts, a plurality of first parts, a plurality of data line light shielding parts and a plurality of second parts. The scan line shielding part and the first part are parallel to the second scan Wire. The data line shading portion and the second portion are parallel to the second data line. The scan line shielding portion and the data line shielding portion are respectively overlapped with the second scan line and the second data line. The first part and the second part overlap in the pixel area. The first part and the second part define each pixel area into n areas, where n is 6 or 9.
1、2、3:顯示裝置 1, 2, 3: Display device
10:彩色顯示面板 10: Color display panel
20、20a、20b:光閘面板 20, 20a, 20b: Shutter panel
30背光模組 30 Backlight Modules
100、200:第一基板 100, 200: the first substrate
102、202:閘絕緣層 102, 202: Gate insulating layer
104:層間介電層 104: Interlayer dielectric layer
106、204:平坦層 106, 204: Flat layer
108:緩衝層 108: Buffer layer
110、210:第二基板 110, 210: Second substrate
120、220:液晶層 120, 220: liquid crystal layer
130、230:第一偏振片 130, 230: The first polarizer
140、240:第二偏振片 140, 240: Second polarizer
BM1、BM2:黑矩陣 BM1, BM2: black matrix
C1:第一部分
C1:
C2:第二部分 C2: Part II
CE、COM、COMa、COM1:共用電極 CE, COM, COMa, COM1: Common electrode
CF:色彩轉換元件 CF: Color Conversion Element
CH1、CH2:通道層 CH1, CH2: channel layer
D1、D2:汲極 D1, D2: drain
DL1:第一資料線 DL1: The first data line
DL2:第二資料線 DL2: Second data line
DLs:資料線遮光部 DLs: Data Line Shading
DR1:第一方向 DR1: first direction
DR2:第二方向 DR2: Second direction
DR3:第三方向 DR3: Third Direction
DR4:第四方向 DR4: Fourth direction
G1、G2:閘極 G1, G2: gate
H1、H2、O1、O2:開口 H1, H2, O1, O2: Opening
PE1、PE2:畫素電極 PE1, PE2: pixel electrode
PX1:第一畫素 PX1: first pixel
PX2:第二畫素 PX2: Second pixel
PXr:畫素區 PXr: pixel area
R:區域 R: area
S1、S2:源極 S1, S2: source
SL1:第一掃描線 SL1: first scan line
SL2:第二掃描線 SL2: Second scan line
SLs:掃描線遮光部 SLs: Scan Line Shading
SP1:紅色子畫素 SP1: Red Subpixel
SP2:綠色子畫素 SP2: Green Subpixel
SP3:藍色子畫素 SP3: Blue Subpixel
SPr:子畫素區 SPr: sub-pixel area
SS:遮光結構 SS: Shading structure
T1、T2:主動元件 T1, T2: Active components
T2s:主動元件遮光部 T2s: active element shading part
W1、W2、W3、Wa、Wb、WDL1、WDL2、WG2、WSL1、WSL2:寬度 W1, W2, W3, Wa, Wb, W DL1 , W DL2 , W G2 , W SL1 , W SL2 : Width
X1、X2:距離 X1, X2: distance
圖1A是依照本發明的一實施例的一種彩色顯示面板的上視示意圖。 FIG. 1A is a schematic top view of a color display panel according to an embodiment of the present invention.
圖1B是依照本發明的一實施例的一種光閘面板的上視示意圖。 FIG. 1B is a schematic top view of a shutter panel according to an embodiment of the present invention.
圖1C是依照本發明的一實施例的一種顯示裝置的斜視示意圖。 FIG. 1C is a schematic perspective view of a display device according to an embodiment of the present invention.
圖2是依照本發明的一實施例的一種光閘面板的上視示意圖。 2 is a schematic top view of a shutter panel according to an embodiment of the present invention.
圖3A是依照本發明的一實施例的一種光閘面板的上視示意圖。 3A is a schematic top view of a shutter panel according to an embodiment of the present invention.
圖3B是依照本發明的一實施例的一種顯示裝置的斜視示意圖。 3B is a schematic perspective view of a display device according to an embodiment of the present invention.
圖4是依照本發明的一實施例的一種光閘面板的上視示意圖。 4 is a schematic top view of a shutter panel according to an embodiment of the present invention.
圖1A是依照本發明的一實施例的一種彩色顯示面板的上視示意圖。圖1B是依照本發明的一實施例的一種光閘面板的上視示意圖。圖1C是依照本發明的一實施例的一種顯示裝置的斜視示意圖。 FIG. 1A is a schematic top view of a color display panel according to an embodiment of the present invention. FIG. 1B is a schematic top view of a shutter panel according to an embodiment of the present invention. FIG. 1C is a schematic perspective view of a display device according to an embodiment of the present invention.
請參考圖1A,彩色顯示面板10包括多條第一掃描線SL1、多條第一資料線DL1以及多個第一畫素PX1。在本實施例中,彩色顯示面板10還包括黑矩陣BM1。
Please refer to FIG. 1A , the
第一掃描線SL1沿著第一方向DR1延伸,第一資料線DL1沿著第二方向DR2延伸。第一方向DR1與第二方向DR2交錯。在一些實施例中,各第一掃描線SL1的寬度WSL1約為22微米至24微米。在一些實施例中,各第一資料線DL1的寬度WDL1約為6微米至7微米。在本實施例中,第一資料線DL1為波浪形,但本發明不以此為限。在其他實施例中,第一資料線DL1為直線形。 The first scan line SL1 extends along the first direction DR1, and the first data line DL1 extends along the second direction DR2. The first direction DR1 intersects with the second direction DR2. In some embodiments, the width W SL1 of each first scan line SL1 is about 22 to 24 microns. In some embodiments, the width W DL1 of each of the first data lines DL1 is about 6 μm to 7 μm. In this embodiment, the first data line DL1 is wavy, but the invention is not limited to this. In other embodiments, the first data line DL1 is straight.
第一畫素PX1電性連接至第一掃描線SL1以及第一資料線DL1。在本實施例中,各第一畫素PX1包括紅色子畫素SP1、綠色子畫素SP2以及藍色子畫素SP3。紅色子畫素SP1、綠色子畫素SP2以及藍色子畫素SP3的排列順序可以依照實際需求而進行調整。在本實施例中,相鄰的兩條第一掃描線SL1與相鄰的兩條第一資料線DL1定義出一個子畫素區SPr。換句話說,相鄰的兩條第一掃描線SL1與相鄰的兩條第一資料線DL1定義出一個子畫 素的面積。換句話說,相鄰的兩條第一掃描線SL1垂直投影於基板的圖案與相鄰的兩條第一資料線DL1垂直投影於基板的圖案所圍繞出來的面積即定義為一個子畫素的面積。每個第一畫素PX1的面積等於多個子畫素的面積的合。在本實施例中,每個第一畫素PX1的面積等於一個紅色子畫素SP1的面積、一個綠色子畫素SP2的面積以及一個藍色子畫素SP3的面積的合,即三個子畫素區SPr的面積,但本發明不以此為限。在其他實施例中,每個第一畫素PX1還可以包括其他顏色的子畫素,例如白色子畫素、黃色子畫素或其他顏色的子畫素。 The first pixel PX1 is electrically connected to the first scan line SL1 and the first data line DL1. In this embodiment, each first pixel PX1 includes a red sub-pixel SP1, a green sub-pixel SP2 and a blue sub-pixel SP3. The arrangement order of the red sub-pixel SP1, the green sub-pixel SP2 and the blue sub-pixel SP3 can be adjusted according to actual requirements. In this embodiment, two adjacent first scan lines SL1 and two adjacent first data lines DL1 define a sub-pixel region SPr. In other words, two adjacent first scan lines SL1 and two adjacent first data lines DL1 define a sub-picture area of the element. In other words, the area surrounded by the pattern of the two adjacent first scan lines SL1 vertically projected on the substrate and the pattern of the two adjacent first data lines DL1 vertically projected on the substrate is defined as a sub-pixel area. The area of each first pixel PX1 is equal to the sum of the areas of the multiple sub-pixels. In this embodiment, the area of each first pixel PX1 is equal to the sum of the area of one red sub-pixel SP1, the area of one green sub-pixel SP2 and the area of one blue sub-pixel SP3, that is, three sub-pixels the area of the prime region SPr, but the present invention is not limited thereto. In other embodiments, each first pixel PX1 may further include sub-pixels of other colors, such as white sub-pixels, yellow sub-pixels, or sub-pixels of other colors.
紅色子畫素SP1、綠色子畫素SP2以及藍色子畫素SP3各自包括主動元件T1以及畫素電極PE1。主動元件T1包括通道層CH1、閘極G1、源極S1與汲極D1。閘極G1電性連接至對應的一條第一掃描線SL1。閘極G1重疊於通道層CH1,且閘極G1與通道層CH1之間夾有閘絕緣層(未繪出)。層間介電層(未繪出)覆蓋閘極G1,且層間介電層位於第一掃描線SL1與第一資料線DL1之間。源極S1與汲極D1位於層間介電層上,且分別透過開口H1、H2而電性連接至通道層CH1。開口H1、H2至少貫穿層間介電層。在本實施例中,開口H1、H2貫穿閘絕緣層與層間介電層。源極S1電性連接至對應的一條第一資料線DL1。 The red sub-pixel SP1, the green sub-pixel SP2, and the blue sub-pixel SP3 each include an active element T1 and a pixel electrode PE1. The active element T1 includes a channel layer CH1, a gate electrode G1, a source electrode S1 and a drain electrode D1. The gate electrode G1 is electrically connected to a corresponding first scan line SL1. The gate electrode G1 overlaps the channel layer CH1, and a gate insulating layer (not shown) is sandwiched between the gate electrode G1 and the channel layer CH1. An interlayer dielectric layer (not shown) covers the gate electrode G1, and the interlayer dielectric layer is located between the first scan line SL1 and the first data line DL1. The source electrode S1 and the drain electrode D1 are located on the interlayer dielectric layer, and are electrically connected to the channel layer CH1 through the openings H1 and H2 respectively. The openings H1 and H2 at least penetrate through the interlayer dielectric layer. In this embodiment, the openings H1 and H2 penetrate through the gate insulating layer and the interlayer dielectric layer. The source electrode S1 is electrically connected to a corresponding one of the first data lines DL1.
雖然在本實施例中,主動元件T1是以頂部閘極型的薄膜電晶體為例,但本發明不以此為限。在其他實施例中,主動元件T1也可以是底部閘極型或其他類型的薄膜電晶體。在一些實施例 中,主動元件T1底下設置有遮光結構(未繪出),藉此避免光線(例如背光模組發出的光線)照射到通道層CH1,導致漏電問題。 Although in this embodiment, the active element T1 is a top gate type thin film transistor as an example, the invention is not limited to this. In other embodiments, the active element T1 may also be a bottom gate type or other type of thin film transistor. In some embodiments In the figure, a light-shielding structure (not shown) is disposed under the active element T1, thereby preventing light (eg, light emitted by the backlight module) from irradiating the channel layer CH1, resulting in leakage problems.
平坦層(未繪出)位於第一資料線DL1、源極S1與汲極D1上。畫素電極PE1位於平坦層上,且透過開口O1而電性連接至汲極D1。開口O1至少貫穿平坦層。在一些實施例中,紅色子畫素SP1、綠色子畫素SP2以及藍色子畫素SP3各自還包括共用電極(未繪出)。在本實施例中,彩色顯示面板為液晶面板,藉由共用電極與畫素電極PE1之間的電場以控制液晶分子的導向。 The flat layer (not shown) is located on the first data line DL1, the source electrode S1 and the drain electrode D1. The pixel electrode PE1 is located on the flat layer, and is electrically connected to the drain electrode D1 through the opening O1. The opening O1 penetrates at least the flat layer. In some embodiments, the red sub-pixel SP1, the green sub-pixel SP2, and the blue sub-pixel SP3 each further include a common electrode (not shown). In this embodiment, the color display panel is a liquid crystal panel, and the orientation of the liquid crystal molecules is controlled by the electric field between the common electrode and the pixel electrode PE1.
黑矩陣BM1重疊於第一掃描線SL1以及第一資料線DL1。在本實施例中,黑矩陣BM1包括多個開口,且每個開口重疊於一個子畫素的畫素電極PE1。 The black matrix BM1 overlaps the first scan line SL1 and the first data line DL1. In this embodiment, the black matrix BM1 includes a plurality of openings, and each opening overlaps the pixel electrode PE1 of one sub-pixel.
請參考圖1B,光閘面板20包括多條第二掃描線SL2、多條第二資料線DL2、多個第二畫素PX2以及遮光結構SS。
Referring to FIG. 1B , the
第二掃描線SL2沿著第三方向DR3延伸,第二資料線DL2沿著第四方向DR4延伸。第三方向DR3與第四方向DR4交錯。在一些實施例中,第三方向DR3實質上等於第一方向DR1,且第四方向DR4實質上等於第二方向DR2,但本發明不以此為限。在其他實施例中,第三方向DR3實質上等於第二方向DR2,且第四方向DR4實質上等於第一方向DR1。在其他實施例中,第三方向DR3不平行於第一方向DR1與第二方向DR2,且第四方向DR4不平行於第一方向DR1與第二方向DR2。在本實施例中,相鄰的兩條第二掃描線SL2與相鄰的兩條第二資料線DL2定義出一 個畫素區PXr。換句話說,相鄰的兩條第二掃描線SL2與相鄰的兩條第二資料線DL2定義出一個第二畫素PX2的面積。換句話說,相鄰的兩條第二掃描線SL2垂直投影於基板的圖案與相鄰的兩條第二資料線DL2垂直投影於基板的圖案所圍繞出來的面積即定義為一個第二畫素PX2的面積。 The second scan line SL2 extends along the third direction DR3, and the second data line DL2 extends along the fourth direction DR4. The third direction DR3 intersects with the fourth direction DR4. In some embodiments, the third direction DR3 is substantially equal to the first direction DR1, and the fourth direction DR4 is substantially equal to the second direction DR2, but the invention is not limited thereto. In other embodiments, the third direction DR3 is substantially equal to the second direction DR2, and the fourth direction DR4 is substantially equal to the first direction DR1. In other embodiments, the third direction DR3 is not parallel to the first direction DR1 and the second direction DR2, and the fourth direction DR4 is not parallel to the first direction DR1 and the second direction DR2. In this embodiment, two adjacent second scan lines SL2 and two adjacent second data lines DL2 define a A pixel area PXr. In other words, two adjacent second scan lines SL2 and two adjacent second data lines DL2 define an area of one second pixel PX2. In other words, the area surrounded by the pattern of the two adjacent second scan lines SL2 projected vertically on the substrate and the pattern of the two adjacent second data lines DL2 projected vertically on the substrate is defined as a second pixel Area of PX2.
在一些實施例中,各第二掃描線SL2的寬度WSL2約為4.5微米至7.5微米,例如4微米至6微米。在一些實施例中,各第二資料線DL2的寬度WDL2約為3微米至5微米。 In some embodiments, the width W SL2 of each second scan line SL2 is about 4.5 to 7.5 microns, for example, 4 to 6 microns. In some embodiments, the width W DL2 of each of the second data lines DL2 is about 3 micrometers to 5 micrometers.
第二畫素PX2電性連接至第二掃描線SL2以及第二資料線DL2。第二畫素PX2包括主動元件T2以及畫素電極PE2。主動元件T2包括通道層CH2、閘極G2、源極S2與汲極D2。閘極G2電性連接至對應的一條第二掃描線SL2。在一些實施例中,各閘極G2的寬度WG2大於各第二掃描線SL2的寬度WSL2,且各閘極G2的寬度WG2約為20微米至24微米。在本實施例中,各主動元件T2的寬度實質上等於各閘極G2的寬度WG2,且各主動元件T2的寬度小於40微米,各主動元件T2在垂直第二掃描線SL2延伸方向上的寬度小於40微米。閘極G2直接連接至對應的一條第二掃描線SL2。閘極G2重疊於通道層CH2,且閘極G2與通道層CH2之間夾有閘絕緣層(未繪出),且第二掃描線SL2與第二資料線DL2之間夾有閘絕緣層。源極S2與汲極D2位於閘絕緣層上,且電性連接至通道層CH2。源極S2電性連接至對應的一條第二資料線DL2。在本實施例中,主動元件T2的汲極D2沿著平行於第二 掃描線SL2的第三方向DR3延伸,藉此減小主動元件T2的寬度。 The second pixel PX2 is electrically connected to the second scan line SL2 and the second data line DL2. The second pixel PX2 includes an active element T2 and a pixel electrode PE2. The active element T2 includes a channel layer CH2, a gate electrode G2, a source electrode S2 and a drain electrode D2. The gate electrode G2 is electrically connected to a corresponding one of the second scan lines SL2. In some embodiments, the width WG2 of each gate G2 is greater than the width W SL2 of each second scan line SL2 , and the width WG2 of each gate G2 is about 20 μm to 24 μm. In this embodiment, the width of each active element T2 is substantially equal to the width WG2 of each gate G2 , and the width of each active element T2 is less than 40 μm. The width of each active element T2 in the extending direction perpendicular to the second scan line SL2 The width is less than 40 microns. The gate electrode G2 is directly connected to a corresponding one of the second scan lines SL2. The gate electrode G2 overlaps the channel layer CH2, and a gate insulating layer (not shown) is sandwiched between the gate electrode G2 and the channel layer CH2, and a gate insulating layer is sandwiched between the second scan line SL2 and the second data line DL2. The source electrode S2 and the drain electrode D2 are located on the gate insulating layer and are electrically connected to the channel layer CH2. The source electrode S2 is electrically connected to a corresponding second data line DL2. In this embodiment, the drain electrode D2 of the active element T2 extends along the third direction DR3 parallel to the second scan line SL2, thereby reducing the width of the active element T2.
雖然在本實施例中,主動元件T2是以底部閘極型的薄膜電晶體為例,但本發明不以此為限。在其他實施例中,主動元件T2也可以是頂部閘極型或其他類型的薄膜電晶體。在一些實施例中,在主動元件T2是頂部閘極型薄膜電晶體時,主動元件T2底下設置有遮光結構(未繪出),藉此避免光線(例如背光模組發出的光線)照射到通道層CH2,導致漏電問題。 Although in this embodiment, the active element T2 is a bottom gate type thin film transistor as an example, the invention is not limited to this. In other embodiments, the active element T2 may also be a top gate type or other type of thin film transistor. In some embodiments, when the active element T2 is a top gate type thin film transistor, a light-shielding structure (not shown) is disposed under the active element T2 to prevent light (such as light emitted by the backlight module) from irradiating the channel layer CH2, causing leakage problems.
平坦層(未繪出)位於第二資料線DL2、源極S2與汲極D2上。畫素電極PE2位於平坦層上,且透過開口O2而電性連接至汲極D2。開口O2至少貫穿平坦層。 The flat layer (not shown) is located on the second data line DL2, the source electrode S2 and the drain electrode D2. The pixel electrode PE2 is located on the flat layer, and is electrically connected to the drain electrode D2 through the opening O2. The opening O2 penetrates at least the flat layer.
遮光結構SS包括黑矩陣BM2與共用電極COM。在本實施例中,黑矩陣BM2包括多個掃描線遮光部SLs、多個資料線遮光部DLs、以及多個主動元件遮光部T2s。在本實施例中,共用電極COM包括多個第一部分C1多個第二部分C2。 The light-shielding structure SS includes a black matrix BM2 and a common electrode COM. In this embodiment, the black matrix BM2 includes a plurality of scan line light shielding portions SLs, a plurality of data line light shielding portions DLs, and a plurality of active element light shielding portions T2s. In this embodiment, the common electrode COM includes a plurality of first portions C1 and a plurality of second portions C2.
掃描線遮光部SLs重疊且平行於第二掃描線SL2。掃描線遮光部SLs沿著第三方向DR3延伸。在一些實施例中,各掃描線遮光部SLs的寬度W1約為20微米至24微米。 The scan line light shielding portion SLs overlaps and is parallel to the second scan line SL2. The scan line light shielding portion SLs extends along the third direction DR3. In some embodiments, the width W1 of each scan line light shielding portion SLs is about 20 to 24 microns.
資料線遮光部DLs重疊且平行於第二資料線DL2。資料線遮光部DLs沿著第四方向DR4延伸。在一些實施例中,各資料線遮光部DLs的寬度W2約為4微米至8微米。 The data line shielding portions DLs overlap and are parallel to the second data line DL2. The data line light shielding portion DLs extends along the fourth direction DR4. In some embodiments, the width W2 of each data line light shielding portion DLs is about 4 μm to 8 μm.
主動元件遮光部T2s重疊於主動元件T2。在一些實施例中,各主動元件遮光部T2s的寬度W3大於各掃描線遮光部SLs 的寬度W1,且各主動元件遮光部T2s的寬度約為38微米至42微米,在本實施例中。各主動元件遮光部T2s的寬度W3與各掃描線遮光部SLs的寬度W1的差值小於20微米。在一些實施例中,主動元件遮光部T2s的其中一側邊緣與對應之掃描線遮光部SLs的邊緣之間的距離X1小於10微米,且主動元件遮光部T2s的另一側邊緣與對應之掃描線遮光部SLs的邊緣之間的距離X2小於10微米。 The active element light-shielding portion T2s overlaps the active element T2. In some embodiments, the width W3 of each active element light shielding portion T2s is greater than that of each scan line light shielding portion SLs , and the width of each active element light-shielding portion T2s is about 38 μm to 42 μm, in this embodiment. The difference between the width W3 of each active element light shielding portion T2s and the width W1 of each scanning line light shielding portion SLs is less than 20 μm. In some embodiments, the distance X1 between one edge of the active element shading portion T2s and the edge of the corresponding scan line shading portion SLs is less than 10 μm, and the other side edge of the active element shading portion T2s and the corresponding scanning line The distance X2 between the edges of the line light shielding portions SLs is less than 10 micrometers.
在本實施例中,掃描線遮光部SLs、資料線遮光部DLs以及主動元件遮光部T2s彼此相連並構成網格狀的黑矩陣BM2。 In this embodiment, the scan line light shielding portion SLs, the data line light shielding portion DLs, and the active element light shielding portion T2s are connected to each other and form a grid-shaped black matrix BM2.
第一部分C1平行於掃描線遮光部SLs以及第二掃描線SL2。第一部分C1沿著第三方向DR3延伸。第一部分C1重疊於畫素區PXr。在一些實施例中,第一部分C1重疊於畫素區PXr的畫素電極PE2。在一些實施例中,相鄰的兩個第一部分C1之間在第四方向DR4上的距離約等於第一部分C1與相鄰之掃描線遮光部SLs之間在第四方向DR4上的距離。 The first portion C1 is parallel to the scan line light shielding portion SLs and the second scan line SL2. The first portion C1 extends along the third direction DR3. The first portion C1 overlaps the pixel area PXr. In some embodiments, the first portion C1 overlaps the pixel electrode PE2 of the pixel region PXr. In some embodiments, the distance in the fourth direction DR4 between two adjacent first portions C1 is approximately equal to the distance in the fourth direction DR4 between the first portion C1 and the adjacent scan line shielding portions SLs.
第二部分C2平行於資料線遮光部DLs以及第二資料線DL2。第二部分C2沿著第四方向DR4延伸。第二部分C2重疊於畫素區PXr。在一些實施例中,第二部分C2重疊於畫素區PXr的畫素電極PE2。在一些實施例中,相鄰的兩個第二部分C2之間在第三方向DR3上的距離約等於第二部分C2與相鄰之資料線遮光部DLs之間在第三方向DR3上的距離。 The second portion C2 is parallel to the data line shading portion DLs and the second data line DL2. The second portion C2 extends along the fourth direction DR4. The second portion C2 overlaps the pixel area PXr. In some embodiments, the second portion C2 overlaps the pixel electrode PE2 of the pixel region PXr. In some embodiments, the distance in the third direction DR3 between two adjacent second portions C2 is approximately equal to the distance in the third direction DR3 between the second portion C2 and the adjacent data line shading portions DLs .
在本實施例中,第一部分C1中的至少一個以及第二部分 C2中的至少一個彼此相連並構成共用電極COM。相鄰兩條第二掃描線SL2之間的第一部分C1與第二部分C2彼此相連並構成沿著第三方向DR3延伸的共用電極COM,且共用電極COM分離於第二掃描線SL2。在本實施例中,藉由其他共用電極(未繪出)與畫素電極PE2之間的電場以控制液晶分子的導向。 In this embodiment, at least one of the first portion C1 and the second portion At least one of C2 is connected to each other and constitutes a common electrode COM. The first portion C1 and the second portion C2 between two adjacent second scan lines SL2 are connected to each other and form a common electrode COM extending along the third direction DR3, and the common electrode COM is separated from the second scan lines SL2. In this embodiment, the orientation of the liquid crystal molecules is controlled by the electric field between other common electrodes (not shown) and the pixel electrode PE2.
在本實施例中,共用電極COM、閘極G2以及第二掃描線SL2屬於相同膜層,且材料例如包括鉻、金、銀、銅、錫、鉛、鉿、鎢、鉬、釹、鈦、鉭、鋁、鋅等金屬、上述合金、上述金屬氧化物、上述金屬氮化物或上述之組合或其他導電材料。在本實施例中,黑矩陣BM2的材料例如包括黑色樹脂、鉻或氧化鉻或是其他不透光金屬材料。黑矩陣BM2與共用電極COM屬於不同膜層,且黑矩陣BM2與共用電極COM彼此分離。在一些實施例中,黑矩陣BM2與共用電極COM包括不同材料。 In this embodiment, the common electrode COM, the gate electrode G2 and the second scan line SL2 belong to the same film layer, and the materials include, for example, chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, Metals such as tantalum, aluminum, zinc, the above-mentioned alloys, the above-mentioned metal oxides, the above-mentioned metal nitrides, or a combination of the above, or other conductive materials. In this embodiment, the material of the black matrix BM2 includes, for example, black resin, chrome or chrome oxide, or other opaque metal materials. The black matrix BM2 and the common electrode COM belong to different film layers, and the black matrix BM2 and the common electrode COM are separated from each other. In some embodiments, the black matrix BM2 and the common electrode COM include different materials.
在一些實施例中,第一部分C1以及第二部分C2將各畫素區PXr定義成n個區域R,其中n為6或9。換句話說,第一部分C1、第二部分C2以及黑矩陣垂直投影於基板的圖案將畫素區PXr垂直投影於基板的圖案區分為6個或9個區域。在本實施例中,n為9。部分區域R(圖1A中位於中央的一個區域R)的面積是由第一部分C1與第二部分C2所定義(或被第一部分C1與第二部分C2所圍繞)。另一部分區域R(圖1A中位於外圍的八個區域R)的面積是由第一部分C1、第二部分C2與黑矩陣BM2所定義(或被第一部分C1、第二部分C2與黑矩陣BM2所圍繞)。 In some embodiments, the first portion C1 and the second portion C2 define each pixel region PXr into n regions R, where n is 6 or 9. In other words, the pattern of the first portion C1, the second portion C2 and the black matrix vertically projected on the substrate divides the pattern of the pixel region PXr vertically projected on the substrate into 6 or 9 regions. In this embodiment, n is 9. The area of the partial region R (a central region R in FIG. 1A ) is defined by the first portion C1 and the second portion C2 (or surrounded by the first portion C1 and the second portion C2 ). The area of another part of the region R (the eight regions R at the periphery in FIG. 1A ) is defined by the first part C1, the second part C2 and the black matrix BM2 (or defined by the first part C1, the second part C2 and the black matrix BM2). around).
藉由第一部分C1以及第二部分C2將畫素區PXr定義成多個面積較小的區域R,能改善光閘面板20解析度不足的問題。區域R的面積不小於第一畫素PX1的面積的1倍。在本實施例中,區域R的面積約等於第一畫素PX1的面積。
The pixel region PXr is defined into a plurality of regions R with smaller areas by the first portion C1 and the second portion C2, so that the problem of insufficient resolution of the
各第一部分C1的寬度為Wa。各第一部分C1的寬度Wa與各掃描線遮光部SLs的寬度W1的差值小於20%的寬度W1,換句話說,0.8W1<Wa<1.2W1。各第二部分C2的寬度為Wb。各第二部分C2的寬度Wb與各資料線遮光部DLs的寬度W2的差值小於20%的寬度W2,換句話說,0.8W2<Wb<1.2W2。 The width of each first portion C1 is Wa. The difference between the width Wa of each first portion C1 and the width W1 of each scan line light shielding portion SLs is less than 20% of the width W1, in other words, 0.8W1<Wa<1.2W1. The width of each second portion C2 is Wb. The difference between the width Wb of each second portion C2 and the width W2 of each data line light shielding portion DLs is less than 20% of the width W2, in other words, 0.8W2<Wb<1.2W2.
在本實施例中,各第一部分C1的寬度Wa近似或相等於各掃描線遮光部SLs的寬度W1,且各第二部分C2的寬度Wb近似或相等於各資料線遮光部DLs的寬度W2,因此,能避免顯示畫面出現網狀紋路的問題。 In this embodiment, the width Wa of each first portion C1 is approximately or equal to the width W1 of each scan line light shielding portion SLs, and the width Wb of each second portion C2 is approximately or equal to the width W2 of each data line light shielding portion DLs, Therefore, the problem of mesh lines appearing on the display screen can be avoided.
請參考圖1A、圖1B以及圖1C,為了方便說明,圖1C省略了圖1A的畫素電極PE1與黑矩陣BM1以及圖1B的畫素電極PE2。顯示裝置1包括彩色顯示面板10、光閘面板20以及背光模組30。彩色顯示面板10、光閘面板20以及背光模組30彼此重疊。在本實施例中,光閘面板20位於彩色顯示面板10以及背光模組30之間。彩色顯示面板10的第一掃描線SL1重疊於光閘面板20的第二掃描線SL2以及第一部分C1。彩色顯示面板10的部分第一資料線DL1重疊於光閘面板20的第二資料線DL2以及第二部分C2。
Please refer to FIGS. 1A , 1B and 1C. For convenience of description, FIG. 1C omits the pixel electrode PE1 and the black matrix BM1 of FIG. 1A and the pixel electrode PE2 of FIG. 1B . The
在本實施例中,彩色顯示面板10的一個第一畫素PX1的面積約等於一個區域R的面積,且九個第一畫素PX1重疊於一個第二畫素PX2。
In this embodiment, the area of one first pixel PX1 of the
圖2是依照本發明的一實施例的一種光閘面板的上視示意圖。在此必須說明的是,圖2的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。 2 is a schematic top view of a shutter panel according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 2 uses the element numbers and part of the content of the embodiment of FIG. 1A to FIG. 1C , wherein the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.
圖2的光閘面板20a與圖1B的光閘面板20的主要差異在於:光閘面板20a的掃描線遮光部SLs、資料線遮光部DLs、主動元件遮光部T2s、第一部分C1以及第二部分C2屬於相同膜層。
The main difference between the
在本實施例中,遮光結構SS包括掃描線遮光部SLs、資料線遮光部DLs、主動元件遮光部T2s、第一部分C1以及第二部分C2,且掃描線遮光部SLs、資料線遮光部DLs、主動元件遮光部T2s、第一部分C1以及第二部分C2為連在一起的黑矩陣。 In this embodiment, the light shielding structure SS includes a scan line light shielding portion SLs, a data line light shielding portion DLs, an active element light shielding portion T2s, a first portion C1 and a second portion C2, and the scan line light shielding portion SLs, the data line light shielding portion DLs, The active element light-shielding portion T2s, the first portion C1 and the second portion C2 are a black matrix connected together.
在本實施例中,光閘面板20a還包括共用電極COMa。共用電極COMa重疊於第一部分C1以及第二部分C2,且共用電極COMa位於相鄰的兩條第二掃描線SL2之間。
In this embodiment, the
在一些實施例中,第一部分C1以及第二部分C2將各畫素區PXr定義成n個區域R,其中n為6或9。換句話說,第一部分C1、第二部分C2以及黑矩陣垂直投影於基板的圖案將畫素區PXr垂直投影於基板的圖案區分為6個或9個區域。在本實施例 中,n為9。部分區域R(圖2中位於中央的一個區域R)的面積是由第一部分C1與第二部分C2所定義(或被第一部分C1與第二部分C2所圍繞)。一部分區域R(圖2中左邊中間的一個區域R以及右邊中間的一個區域R)的面積是由第一部分C1、第二部分C2與資料線遮光部DLs所定義(或被第一部分C1、第二部分C2與資料線遮光部DLs所圍繞)。一部分區域R(圖2中上邊中間的一個區域R以及下邊中間的一個區域R)的面積是由第一部分C1、第二部分C2與掃描線遮光部SLs所定義(或被第一部分C1、第二部分C2與掃描線遮光部SLs所圍繞)。一部分區域R(圖2中位於四個角落的四個區域R)的面積是由第一部分C1、第二部分C2、主動元件遮光部T2s、資料線遮光部DLs與掃描線遮光部SLs所定義(或被第一部分C1、第二部分C2、主動元件遮光部T2s、資料線遮光部DLs與掃描線遮光部SLs所圍繞)。 In some embodiments, the first portion C1 and the second portion C2 define each pixel region PXr into n regions R, where n is 6 or 9. In other words, the pattern of the first portion C1, the second portion C2 and the black matrix vertically projected on the substrate divides the pattern of the pixel region PXr vertically projected on the substrate into 6 or 9 regions. In this example , n is 9. The area of the partial region R (a central region R in FIG. 2 ) is defined by the first portion C1 and the second portion C2 (or surrounded by the first portion C1 and the second portion C2 ). The area of a part of the region R (a region R in the middle of the left and a region R in the middle of the right in FIG. 2) is defined by the first part C1, the second part C2 and the data line shading part DLs (or by the first part C1, the second part C2 and the data line shading part DLs). The portion C2 is surrounded by the data line shading portion DLs). The area of a part of the region R (a region R in the middle of the upper side and a region R in the middle of the lower side in FIG. 2 ) is defined by the first part C1, the second part C2 and the scan line shading part SLs (or by the first part C1, the second part The portion C2 is surrounded by the scan line light shielding portion SLs). The area of a part of the region R (the four regions R at the four corners in FIG. 2 ) is defined by the first part C1 , the second part C2 , the active element shading part T2s , the data line shading part DLs and the scanning line shading part SLs ( or surrounded by the first portion C1, the second portion C2, the active element light shielding portion T2s, the data line light shielding portion DLs and the scan line light shielding portion SLs).
在本實施例中,共用電極COMa、閘極G2以及第二掃描線SL2屬於相同膜層,且材料例如包括鉻、金、銀、銅、錫、鉛、鉿、鎢、鉬、釹、鈦、鉭、鋁、鋅等金屬、上述合金、上述金屬氧化物、上述金屬氮化物或上述之組合或其他導電材料。在本實施例中,掃描線遮光部SLs、資料線遮光部DLs、主動元件遮光部T2s、第一部分C1以及第二部分C2的材料例如包括黑色樹脂、鉻或氧化鉻或是其他不透光金屬材料。 In this embodiment, the common electrode COMa, the gate electrode G2 and the second scan line SL2 belong to the same film layer, and the materials include, for example, chromium, gold, silver, copper, tin, lead, hafnium, tungsten, molybdenum, neodymium, titanium, Metals such as tantalum, aluminum, zinc, the above-mentioned alloys, the above-mentioned metal oxides, the above-mentioned metal nitrides, or a combination of the above, or other conductive materials. In this embodiment, the materials of the scan line shading portion SLs, the data line shading portion DLs, the active element shading portion T2s, the first portion C1 and the second portion C2 include, for example, black resin, chrome or chrome oxide or other opaque metals Material.
圖3A是依照本發明的一實施例的一種光閘面板的上視示意圖。圖3B是依照本發明的一實施例的一種顯示裝置的斜視示 意圖。在此必須說明的是,圖3A與圖3B的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。 3A is a schematic top view of a shutter panel according to an embodiment of the present invention. 3B is a perspective view of a display device according to an embodiment of the present invention intention. It must be noted here that the embodiments of FIGS. 3A and 3B use the element numbers and part of the content of the embodiments of FIGS. 1A to 1C , wherein the same or similar numbers are used to represent the same or similar elements, and the same elements are omitted. Description of technical content. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.
圖3A與圖3B的光閘面板20b與圖1B的光閘面板20的主要差異在於:光閘面板20b的第一部分C1以及第二部分C2將各畫素區PXr定義成6個區域。
The main difference between the
顯示裝置2包括彩色顯示面板10、光閘面板20b以及背光模組。
The
在本實施例中,光閘面板20b的第一部分C1以及第二部分C2將畫素區PXr定義成多個面積較小的區域R,能改善光閘面板20b解析度不足的問題。區域R的面積不小於第一畫素PX1的面積的1倍。在一些實施例中,區域R的面積約等於第一畫素PX1的面積的1.5倍。
In this embodiment, the first portion C1 and the second portion C2 of the
各第一部分C1的寬度為Wa。各第一部分C1的寬度Wa與各掃描線遮光部SLs的寬度W1的差值小於20%的寬度W1,換句話說,0.8W1<Wa<1.2W1。各第二部分C2的寬度為Wb。各第二部分C2的寬度Wb與各資料線遮光部DLs的寬度W2的差值小於20%的寬度W2,換句話說,0.8W2<Wb<1.2W2。 The width of each first portion C1 is Wa. The difference between the width Wa of each first portion C1 and the width W1 of each scan line light shielding portion SLs is less than 20% of the width W1, in other words, 0.8W1<Wa<1.2W1. The width of each second portion C2 is Wb. The difference between the width Wb of each second portion C2 and the width W2 of each data line light shielding portion DLs is less than 20% of the width W2, in other words, 0.8W2<Wb<1.2W2.
在本實施例中,各第一部分C1的寬度Wa近似或相等於各掃描線遮光部SLs的寬度W1,且各第二部分C2的寬度Wb近似或相等於各資料線遮光部DLs的寬度W2,因此,能避免顯示畫 面出現網狀紋路的問題。 In this embodiment, the width Wa of each first portion C1 is approximately or equal to the width W1 of each scan line light shielding portion SLs, and the width Wb of each second portion C2 is approximately or equal to the width W2 of each data line light shielding portion DLs, Therefore, it is possible to avoid displaying pictures There is a problem with mesh lines on the surface.
圖4是依照本發明的一實施例的一種光閘面板的上視示意圖。在此必須說明的是,圖4的實施例沿用圖1A至圖1C的實施例的元件標號與部分內容,其中採用相同或近似的標號來表示相同或近似的元件,並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例,在此不贅述。 4 is a schematic top view of a shutter panel according to an embodiment of the present invention. It must be noted here that the embodiment of FIG. 4 uses the element numbers and part of the content of the embodiment of FIG. 1A to FIG. 1C , wherein the same or similar numbers are used to represent the same or similar elements, and the same technical content is omitted. illustrate. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated here.
請參考圖4,顯示裝置3包括彩色顯示面板10、光閘面板20以及背光模組30。在本實施例中,光閘面板20位於彩色顯示面板10以及背光模組30之間。在其他實施例中,彩色顯示面板10位於光閘面板20以及背光模組30之間。
Referring to FIG. 4 , the
擴散層D位於彩色顯示面板10以及光閘面板20之間。在本實施例中,擴散層D包括多個散射粒子(未繪示)。從背光模組30發出的光經過光閘面板20之後,藉由擴散層D中的散射粒子進一步散射,以使光能夠分散更均勻,藉此提升顯示裝置3整體的視覺效果。
The diffusion layer D is located between the
彩色顯示面板10包括第一基板100、第二基板110、液晶層120、主動元件T1、畫素電極PE1、共用電極CE、黑矩陣BM1、色彩轉換元件CF、第一偏振片130以及第二偏振片140。
The
主動元件T1位於第一基板100上,且包括通道層CH1、閘極G1、源極S1與汲極D1。閘極G1電性連接至對應的一條第一掃描線SL1(請參考圖1A)。閘極G1重疊於通道層CH1,且閘極G1與通道層CH1之間夾有閘絕緣層102。層間介電層104覆蓋
閘極G1,且層間介電層104位於第一掃描線SL1與第一資料線DL1(請參考圖1A)之間。源極S1與汲極D1位於層間介電層104上,且分別透過貫穿閘絕緣層102與層間介電層104的開口而電性連接至通道層CH1。源極S1電性連接至對應的一條第一資料線DL1。
The active element T1 is located on the
平坦層106位於第一資料線DL1、源極S1與汲極D1上。共用電極CE與畫素電極PE1位於平坦層106上。共用電極CE與畫素電極PE1之間夾有緩衝層108。畫素電極PE1透過貫穿平坦層106以及緩衝層108的開口而電性連接至汲極D1。在本實施例中,共用電極CE與畫素電極PE1皆位於液晶層120的同一側,以構成邊緣電場切換(Fringe Field Switching,FFS)型顯示面板、共面轉換(In-Plane Switching,IPS)型顯示面板或視角高清晰技術(Advanced Hyper-Viewing Angle,AHVA)型顯示面板。在其他實施例中,共用電極CE位於第二基板110上,以構成扭轉向列(Twisted Nematic,TN)型液晶面板或垂直排列(Vertical Alignment,VA)型液晶面板。
The flat layer 106 is located on the first data line DL1, the source electrode S1 and the drain electrode D1. The common electrode CE and the pixel electrode PE1 are located on the flat layer 106 . A buffer layer 108 is sandwiched between the common electrode CE and the pixel electrode PE1. The pixel electrode PE1 is electrically connected to the drain electrode D1 through openings passing through the planarization layer 106 and the buffer layer 108 . In this embodiment, both the common electrode CE and the pixel electrode PE1 are located on the same side of the liquid crystal layer 120 to form a fringe field switching (FFS) type display panel, an in-plane switching (IPS) type display panel or Advanced Hyper-Viewing Angle (AHVA) type display panel. In other embodiments, the common electrode CE is located on the
黑矩陣BM1以及色彩轉換元件CF位於第二基板110上。液晶層120位於第一基板100與第二基板110之間。第一偏振片130與第二偏振片140分別位於第一基板100與第二基板110上。
The black matrix BM1 and the color conversion element CF are located on the
光閘面板20包括第一基板200、第二基板210、液晶層220、主動元件T2、畫素電極PE2、遮光結構SS、第一偏振片230
以及第二偏振片240。在本實施例中,光閘面板20還包括共用電極COM以及共用電極COM1。
The
主動元件T2位於第一基板200上,且包括通道層CH2、閘極G2、源極S2與汲極D2。閘極G2電性連接至對應的一條第二掃描線SL2(請參考圖1B)。閘極G2直接連接至對應的一條第二掃描線SL2。閘極G2重疊於通道層CH2,且閘極G2與通道層CH2之間夾有閘絕緣層202,且第二掃描線SL2與第二資料線DL2(請參考圖1B)之間夾有閘絕緣層202。源極S2與汲極D2位於閘絕緣層202上,且電性連接至通道層CH2。在一些實施例中,源極S2與通道層CH2之間以及汲極D2與通道層CH2之間還包括歐姆接觸層R,但本發明不以此為限。源極S2電性連接至對應的一條第二資料線DL2(請參考圖1B)。
The active element T2 is located on the
共用電極COM與閘極G2屬於相同膜層。在一些實施例中,共用電極COM與閘極G2位於閘絕緣層202與第一基板200之間。
The common electrode COM and the gate electrode G2 belong to the same film layer. In some embodiments, the common electrode COM and the gate electrode G2 are located between the
平坦層204位於第二資料線DL2、源極S2與汲極D2上。畫素電極PE2位於平坦層204上,且透過貫穿平坦層204的開口而電性連接至汲極D2。
The
遮光結構SS位於第二基板210上。液晶層220位於第一基板200與第二基板210之間。第一偏振片230與第二偏振片240分別位於第一基板200與第二基板210上。在一些實施例中,彩色顯示面板10與光閘面板20共用其中一個偏振片,換句話說,
可省略彩色顯示面板10的第一偏振片130或光閘面板20的第二偏振片240,但本發明不以此為限。
The light shielding structure SS is located on the
共用電極COM1位於第二基板210上。在一些實施例中,共用電極COM1位於第二基板210與遮光結構SS之間。在本實施例中,藉由共用電極COM1與畫素電極PE2之間的電場以控制液晶分子的導向。
The common electrode COM1 is located on the
綜上所述,藉由遮光結構之第一部分以及第二部分的設計,能改善光閘面板解析度不足的問題。此外,第一部分的寬度近似或相等於掃描線遮光部的寬度,且第二部分的寬度近似或相等於資料線遮光部的寬度,因此,能避免顯示畫面出現網狀紋路的問題。 To sum up, by designing the first part and the second part of the light-shielding structure, the problem of insufficient resolution of the shutter panel can be improved. In addition, the width of the first portion is approximately or equal to the width of the scan line light shielding portion, and the width of the second portion is approximately or equal to the width of the data line light shielding portion. Therefore, the problem of mesh lines on the display screen can be avoided.
20:光閘面板 20: Shutter panel
BM2:黑矩陣 BM2: Black Matrix
C1:第一部分
C1:
C2:第二部分 C2: Part II
COM:共用電極 COM: Common electrode
CH2:通道層 CH2: Channel Layer
D2:汲極 D2: drain
DL2:第二資料線 DL2: Second data line
DLs:資料線遮光部 DLs: Data Line Shading
DR3:第三方向 DR3: Third Direction
DR4:第四方向 DR4: Fourth direction
G2:閘極 G2: Gate
O2:開口 O2: Opening
PE2:畫素電極 PE2: pixel electrode
PX2:第二畫素 PX2: Second pixel
PXr:畫素區 PXr: pixel area
R:區域 R: area
S2:源極 S2: source
SL2:第二掃描線 SL2: Second scan line
SLs:掃描線遮光部 SLs: Scan Line Shading
SS:遮光結構 SS: Shading structure
T2:主動元件 T2: Active Components
T2s:主動元件遮光部 T2s: active element shading part
W1、W2、W3、Wa、Wb、WDL2、WG2、WSL2:寬度 W1, W2, W3, Wa, Wb, W DL2 , W G2 , W SL2 : Width
X1、X2:距離 X1, X2: distance
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TWI334504B (en) * | 2002-08-30 | 2010-12-11 | Mitsubishi Chem Corp | |
TW201248199A (en) * | 2011-02-14 | 2012-12-01 | Semiconductor Energy Lab | Display device |
WO2013069387A1 (en) * | 2011-11-07 | 2013-05-16 | 三菱電機株式会社 | Display device, and drive method and manufacturing method for same |
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TW201248199A (en) * | 2011-02-14 | 2012-12-01 | Semiconductor Energy Lab | Display device |
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