TWI760478B - Cutting device - Google Patents
Cutting device Download PDFInfo
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- TWI760478B TWI760478B TW107112479A TW107112479A TWI760478B TW I760478 B TWI760478 B TW I760478B TW 107112479 A TW107112479 A TW 107112479A TW 107112479 A TW107112479 A TW 107112479A TW I760478 B TWI760478 B TW I760478B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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Abstract
本發明的課題是在切削加工中檢測出在被加工物成為檢測對象的屑(chipping)或龜裂。 其解決手段為一種以切削刀刃(43)來切削被保持於保持平台的被加工物之切削裝置,具備: 彈性波檢測感測器(71),其係檢測出切削刀刃在切削被加工物時發生的彈性波;及 解析手段(76),其係以取樣時間的間隔來切出從彈性波檢測感測器檢測出的彈性波的連續性的時間軸波形, 設定成取樣時間要比切削刀刃通過檢查對象的屑大小或龜裂大小所須的所要時間更短之構成。An object of the present invention is to detect chips or cracks that are objects of detection in a workpiece during cutting. The solution is a cutting device for cutting a workpiece held on a holding platform with a cutting edge (43), and is provided with: an elastic wave detection sensor (71) which detects when the cutting edge is cutting the workpiece. generated elastic waves; and analysis means (76) for cutting out a continuous time-axis waveform of the elastic waves detected by the elastic wave detection sensor at intervals of sampling time, and setting the sampling time to be longer than the cutting edge By checking the chip size or crack size of the object, the time required is shorter.
Description
本發明是有關以切削刀刃來切削被加工物的切削裝置。The present invention relates to a cutting device for cutting a workpiece with a cutting edge.
以半導體晶圓為代表的板狀的被加工物是例如在切削裝置中以圓環狀的切削刀刃來切削而被分割成複數的晶片。若在被加工物的切削中產生切削刀刃的缺口或切削性能的降低、與異物的接觸、加工負荷的變化等的異常,則切削刀刃會振動。作為檢測出如此的切削刀刃的異常的方法,有以光學感測器來檢測出切削刀刃的缺口之方法(例如參照專利文獻1)或監視安裝了切削刀刃的主軸的馬達電流來檢測出加工負荷之方法被提案。A plate-shaped workpiece typified by a semiconductor wafer is, for example, a plurality of wafers that are cut with an annular cutting edge in a cutting device. When an abnormality such as chipping of the cutting edge, reduction in cutting performance, contact with foreign matter, or change in machining load occurs during cutting of the workpiece, the cutting edge vibrates. As a method of detecting such abnormality of the cutting edge, there are a method of detecting the notch of the cutting edge with an optical sensor (for example, refer to Patent Document 1), or monitoring the motor current of the spindle to which the cutting edge is attached to detect the machining load method is proposed.
就以光學感測器來檢測出切削刀刃的缺口之方法而言,是無法適當地檢測出切削刀刃的缺口以外的異常。又,就監視主軸的馬達電流之方法而言,雖可檢測出影響切削刀刃的旋轉之各種的異常,但由於產生某程度的測定誤差,因此不適於稍微的異常的檢測。於是,有藉由彈性波檢測感測器來檢測出對應於切削刀刃的振動的彈性波,將彈性波的檢測結果予以頻率解析,藉此檢測出伴隨切削刀刃的振動之切削中的異常的方法被提案(例如參照專利文獻2)。 [先前技術文獻] [專利文獻]In the method of detecting the notch of the cutting edge with an optical sensor, abnormality other than the notch of the cutting edge cannot be properly detected. In addition, the method of monitoring the motor current of the spindle can detect various abnormalities affecting the rotation of the cutting edge, but it is not suitable for detection of slight abnormalities due to the occurrence of a certain degree of measurement error. Then, there is a method of detecting an abnormality in cutting accompanied by vibration of the cutting edge by detecting an elastic wave corresponding to the vibration of the cutting edge by an elastic wave detection sensor, and analyzing the frequency of the detection result of the elastic wave. It is proposed (for example, refer to Patent Document 2). [Prior Art Literature] [Patent Literature]
[專利文獻1]日本特許第4704816號公報 [專利文獻2]日本特開2015-170743號公報[Patent Document 1] Japanese Patent No. 4704816 [Patent Document 2] Japanese Patent Laid-Open No. 2015-170743
可是,即使在切削中的異常之中,產生於被加工物的微細的屑也不成問題,但有想要檢測出在玻璃等的切削時發生的突發性的大小的屑或龜裂的情望。然而,就上述的頻率解析而言,難以適當地檢測出如此的被加工物的屑或龜裂。However, even in an abnormality during cutting, fine chips generated in the workpiece are not a problem, but there are cases where it is desired to detect chips or cracks of a sudden size that occur during cutting of glass or the like. see. However, in the above-described frequency analysis, it is difficult to appropriately detect such chips or cracks in the workpiece.
本發明是有鑑於如此的點而研發者,以提供一種在切削加工中檢測出在被加工物成為檢測對象的屑或龜裂之切削裝置作為目的之一。The present invention has been developed in view of such a point, and one of the objects of the present invention is to provide a cutting device that detects chips or cracks that are objects of detection in a workpiece during cutting.
本發明之一形態的切削裝置,係具備: 保持平台,其係保持被加工物; 切削手段,其係具備用以切削被保持於該保持平台上的被加工物的切削刀刃;切削進給手段,其係使該保持平台與該切削手段相對地移動於切削進給方向;分度進給手段,其係使該保持平台與該切削手段相對地移動於與切削進給方向正交的分度進給方向;及控制手段,其係控制該切削裝置,其特徵為具備:彈性波檢測感測器,其係配設於該切削手段或該保持平台,檢測出該切削刀刃在切削被加工物時發生的彈性波;及解析手段,其係從在該彈性波檢測感測器所檢測出之切削加工被加工物時的彈性波的連續性的時間軸波形,以取樣時間T間隔切出而頻率解析,該取樣時間T,係若所欲檢測出之有可能產生於切削後的切削溝的屑、龜裂大小(切削進給方向)為W[μm],該切削進給手段的進給速度為S[mm/sec],則設定成為T≦W/(S×1000)[sec]。 A cutting device according to one aspect of the present invention includes: a holding platform for holding a workpiece; a cutting means including a cutting edge for cutting the workpiece held on the holding table; and cutting feed means , which is to make the holding platform move relative to the cutting means in the cutting feed direction; indexing feed means, which is to make the holding platform and the cutting means move relative to the indexing direction orthogonal to the cutting feed direction A feed direction; and control means for controlling the cutting device, characterized by comprising: an elastic wave detection sensor, which is arranged on the cutting means or the holding platform, and detects that the cutting edge is cutting the workpiece. elastic waves generated at the time; and analysis means for cutting out the continuous time axis waveform of the elastic waves detected by the elastic wave detection sensor at the time of cutting the workpiece at sampling time T intervals For frequency analysis, the sampling time T is W [μm] if the size of chips and cracks that may be generated in the cutting groove after cutting (cutting feed direction) is to be detected, and the feed of the cutting feed means When the speed is S[mm/sec], it is set to T≦W/(S×1000)[sec].
若根據此構成,則可在考慮了切削進給速度的適當的取樣時間,從切削加工時的彈性波的連續性的時間軸波形切出而頻率解析。由於以配合屑大小或龜裂大小的適當的取樣時間來切出而頻率解析,因此可檢測出切削加工中的屑或龜裂的發生,且可特定屑或龜裂的發生位置。 According to this configuration, the frequency analysis can be performed by cutting out the time-axis waveform of the continuity of the elastic wave during cutting at an appropriate sampling time in consideration of the cutting feed rate. Since the frequency analysis is performed by cutting at an appropriate sampling time according to the size of the chip or the size of the crack, the occurrence of the chip or the crack during the cutting process can be detected, and the occurrence position of the chip or the crack can be specified.
若根據本發明,則藉由在考慮切削進給速度的適當的取樣時間進行頻率解析,可檢測出切削加工中的屑或龜裂的發生。 According to the present invention, the occurrence of chips or cracks during cutting can be detected by performing frequency analysis at an appropriate sampling time in consideration of the cutting feed rate.
以下,參照附圖來說明有關本實施形態的切削裝置。圖1是本實施形態的切削裝置的立體圖。另外,切削裝置是如本實施形態般只要具備可檢測出在切削刀刃產生的彈性波之構造即可,並不限於圖1所示的構成。 Hereinafter, the cutting device according to the present embodiment will be described with reference to the drawings. FIG. 1 is a perspective view of the cutting device according to the present embodiment. In addition, the cutting device is not limited to the structure shown in FIG. 1 as long as it has a structure capable of detecting the elastic wave generated in the cutting edge as in the present embodiment.
如圖1所示般,切削裝置1是被構成為使切削刀刃43與保持平台15相對地移動於切削進給方向,藉此以切削刀刃43來切削被保持於保持平台15的被加工物W。被加工物W的表面是依照格子狀的分割預定線來區劃成複數的領域,在被分割預定線所區劃的各領域是形成有各種裝置。被加工物W是在環形框架(ring frame)F的內側被貼著於切割膠帶T,在隔著切割膠帶T來被環形框架F支撐的狀態下搬入至切削裝置1。As shown in FIG. 1 , the
切削裝置1的基台10的上面中央是以延伸於X軸方向(切削進給方向)的方式開口,此開口是被可與保持平台15一起移動的移動板11及蛇腹狀的防水罩12所覆蓋。在保持平台15的表面是藉由多孔(porous)材來形成保持面16,藉由在此保持面16產生的負壓來吸引保持被加工物W。在保持平台15的周圍是設有空氣驅動式的4個的夾鉗(clamp)部17,被加工物W的周圍的環形框架F會從四方來被夾持固定於各夾鉗部17。在防水罩12的下方是設有使保持平台15切削進給於X軸方向(切削進給方向)的進給螺絲式的切削進給手段18。The center of the upper surface of the
在基台10的上面是隔著開口設有載置卡匣(未圖示)的昇降機手段21及洗淨加工完了的被加工物W的洗淨手段24。昇降機手段21是使載置卡匣的平台22昇降,將卡匣內的被加工物W的出入位置調整於高度方向。洗淨手段24是使保持被加工物W的旋轉器平台25下降至基台10內,朝向旋轉中的旋轉器平台25噴射洗淨水來洗淨被加工物W,接著噴上乾燥空氣來乾燥被加工物W。並且,在基台10的上面是以能跨越保持平台15的移動路徑之方式立設有門型的立壁部13。On the upper surface of the
在立壁部13是具有:將一對的切削手段40分度進給於Y軸方向(分度進給方向)的分度進給手段30,及將切削手段40切入進給於Z軸方向(切入進給方向)的切入進給手段35。分度進給手段30是具有:被配置於立壁部13的前面之與Y軸方向平行的一對的導軌31,及可滑動地設置於一對的導軌31的Y軸平台32。切入進給手段35是具有:被配置於Y軸平台32上之與Z軸方向平行的一對的導軌36,及可滑動地配置於一對的導軌36的Z軸平台37。The
在各Z軸平台37的下部是設有切削被加工物W的切削手段40。在Y軸平台32及Z軸平台37的背面側是分別形成有螺帽部,進給螺絲33、38會被螺合於該等螺帽部。在Y軸平台32用的進給螺絲33、Z軸平台37用的進給螺絲38的一端部是分別連結驅動馬達34、39。藉由驅動馬達34、39來旋轉驅動各個的進給螺絲33、38,藉此各切削手段40會沿著導軌31來移動於Y軸方向,各切削手段40會沿著導軌36來切入進給於Z軸方向。A cutting means 40 for cutting the workpiece W is provided at the lower portion of each Z-
一對的切削手段40是主軸42(參照圖2)會旋轉自如地被支撐於主軸殼體41,在主軸42的前端安裝有切削刀刃43。切削刀刃43是被形成以黏合劑來固定鑽石砥粒的圓板狀。在主軸殼體41是固定有刀刃罩45,切削刀刃43的周圍會藉由刀刃罩45來部分地覆蓋。並且,在刀刃罩45是設有在切削被加工物W時對切削刀刃43供給切削水的切削水供給手段46,一邊從切削水供給手段46的各種噴嘴供給切削水,一邊切削被加工物W。The pair of
在如此構成的切削裝置1中,需要在被加工物W的切削中檢測出切削刀刃43的異常,但使用一般的光學感測器的檢測方法是無法檢測出切削刀刃43的缺口以外的異常。此情況,檢測出對應於切削刀刃43的振動之彈性波,將彈性波的檢測結果予以頻率解析,藉此可檢測出伴隨切削刀刃43的振動之切削中的異常。在頻率解析中,彈性波的連續性的時間軸波形會以預定的取樣時間來切出,按每個取樣時間變換成頻率成分,檢測出切削時的異常。In the
可是,在被加工物W的切削加工中有產生屑或龜裂等的情形,但若為數[μm]程度的微細的屑或龜裂,則可無視。然而,在玻璃等的切削加工中,例如有100 [μm]程度的大小,突發性地產生屑或龜裂的情況,無法無視此大小的屑或龜裂。為了以頻率解析來檢測出切削加工中的屑或龜裂的異常,對於屑大小或龜裂大小,必須配合適當的取樣時間。However, chips, cracks, etc. may be generated during cutting of the workpiece W, but if the chips or cracks are as small as several [μm], they can be ignored. However, in the cutting of glass or the like, for example, chips or cracks with a size of about 100 [μm] may be generated suddenly, and chips or cracks of this size cannot be ignored. In order to detect the abnormality of chips or cracks during cutting by frequency analysis, it is necessary to match the size of chips or cracks with an appropriate sampling time.
在此,本件發明者們得知檢查屑大小或龜裂大小與取樣時間的關係時,縮短取樣時間來頻率變換較對於切削加工時的屑的檢測有效。就通常的取樣時間(例如100[msec])而言,雖頻率分解能高,可仔細解析頻率成分,但由於微細的屑等的雜訊也被拾取,因此表示檢測對象的屑或龜裂的峰值會埋沒。又,由於取樣時間長,因此無法特定在取樣時間的哪個的時序(timing)產生屑或龜裂。Here, the inventors of the present invention have found that when examining the relationship between the size of chips or cracks and the sampling time, shortening the sampling time and converting the frequency is more effective for the detection of chips during cutting. For a normal sampling time (for example, 100 [msec]), the frequency resolution is high and the frequency components can be analyzed carefully. However, since noise such as fine chips is also picked up, it shows the peak value of chips or cracks of the detection object. will be buried. In addition, since the sampling time is long, it is impossible to specify at which timing of the sampling time chips or cracks are generated.
相對於此,就短的取樣時間(例如1[msec])而言,雖頻率分解能低,頻率成分的解析變粗,但由於資料數少,因此可檢測出檢測對象的屑或龜裂的發生。又,由於在短時間重複取樣,因此可特定產生屑或龜裂的時序。於是,在切削加工中是著眼於屑或龜裂的發生時序的檢測要比高精度的頻率解析更重要的點,本實施形態是以配合屑大小或龜裂大小的取樣時間來切出振動波形而頻率解析。On the other hand, with a short sampling time (for example, 1 [msec]), the frequency decomposition energy is low, and the analysis of frequency components becomes coarse, but since the number of data is small, the occurrence of chips or cracks in the detection target can be detected. . Moreover, since sampling is repeated in a short time, the timing at which chips or cracks are generated can be specified. Therefore, in cutting processing, it is more important to focus on the detection of the timing of occurrence of chips or cracks than to perform high-accuracy frequency analysis. In this embodiment, the vibration waveform is cut out according to the sampling time of the size of chips or cracks. And frequency analysis.
參照圖2及圖3來說明有關本實施形態的切削手段。圖2是本實施形態的切削手段的分解立體圖。圖3是模式性地表示本實施形態的切削手段的剖面等的圖。另外,在圖2及圖3中,基於說明的方便起見,省略記載覆蓋切削刀刃的外周的輪罩(wheel cover)。並且,切削手段是只要為安裝有本實施形態的切削刀刃的構成即可,並不限於圖2及圖3所示的構成。The cutting means according to the present embodiment will be described with reference to FIGS. 2 and 3 . FIG. 2 is an exploded perspective view of the cutting means of the present embodiment. FIG. 3 is a diagram schematically showing a cross section and the like of the cutting means according to the present embodiment. In addition, in FIGS. 2 and 3 , for convenience of description, description of a wheel cover covering the outer periphery of the cutting blade is omitted. In addition, the cutting means is not limited to the structure shown in FIGS. 2 and 3 as long as it has a structure in which the cutting edge of the present embodiment is attached.
如圖2所示般,切削手段40是在主軸42的前端安裝有刀刃固定件51,切削刀刃43會被安裝於刀刃固定件51。主軸42是例如空氣主軸,經由壓縮空氣層來對於主軸殼體41以浮動狀態被支撐。在主軸殼體41的前端面是安裝有覆蓋主軸42的前端側的罩構件47。在罩構件47是設有一對的拖架(bracket)48,經由拖架48來以螺絲固定於主軸殼體41,藉此主軸42的前端部分從罩構件47的中央開口49突出。As shown in FIG. 2 , in the cutting means 40 , a
在主軸42的前端部分是安裝有支撐切削刀刃43的刀刃固定件51。在刀刃固定件51的背面側是形成有被安裝於主軸42的前端部分的嵌合孔52(參照圖3),在刀刃固定件51的表面側是形成有圓筒狀的突出部53。在突出部53的表面側是形成有圓形凹部54,在圓形凹部54的底面是形成有連接至嵌合孔52的貫通孔55。藉此,被嵌入至刀刃固定件51的主軸42的前端面會從貫通孔55露出,固定螺栓59會經由墊圈58來鎖緊於主軸42的前端面的螺孔44,藉此刀刃固定件51會被固定於主軸42。A
在刀刃固定件51是形成有從突出部53的周面擴展至徑方向外側的凸緣部56,切削刀刃43會被推壓至凸緣部56來安裝於刀刃固定件51。切削刀刃43是在大致圓板狀的輪轂基台61的外周安裝有環狀的切刃62的輪轂刀刃,在輪轂基台61的中央是形成有被***至刀刃固定件51的突出部53的***孔63。一旦此***孔63被推入至突出部53,則突出部53會從輪轂基台61突出。然後,固定螺帽65會被鎖緊於在突出部53的突出部分所形成的陽螺紋57,切削刀刃43會被固定於刀刃固定件51。The
並且,在切削手段40是設有可檢測出在切削刀刃43切削被加工物W時發生的彈性波之彈性波檢測感測器71。彈性波檢測感測器71是所謂的AE(Acoustic Emission)感測器,將傳播至刀刃固定件51的彈性波以振動子72來變換成電性的變化而作為檢測訊號輸出。由於彈性波檢測感測器71是被在接近切削刀刃43的刀刃固定件51,因此來自切削刀刃43的振動容易傳遞。所以,切削刀刃43的振動會藉由彈性波檢測感測器71來精度佳檢測出。In addition, the cutting means 40 is provided with an elastic
在刀刃固定件51側是設有被連接至振動子72的第1線圈手段73(參照圖3),在罩構件47側是設有第2線圈手段74。在第1線圈手段73及第2線圈手段74是例如使用圓環狀的扁平線圈。第1、第2線圈手段73、74是被磁性地結合,來自振動子72的檢測訊號會藉由互相感應來從第1線圈手段73傳送至第2線圈手段74。如此,藉由第1、第2線圈手段73、74來以非接觸傳送檢測訊號,因此可在與切削刀刃43一起旋轉的刀刃固定件51設置彈性波檢測感測器71。The first coil means 73 (see FIG. 3 ) connected to the
如圖3所示般,彈性波檢測感測器71是經由第1、第2線圈手段73、74的磁性的結合來連接控制切削裝置1(參照圖1)的各部的控制手段75。在控制手段75是設有:將在彈性波檢測感測器71所檢測出的時間軸波形予以頻率解析的解析手段76,及從頻率解析結果判斷對象大小(例如100[μm]程度)的屑或龜裂的判斷手段77。解析手段76是在切削加工被加工物W時在彈性波檢測感測器71所檢測出的彈性波的連續性的時間軸波形會以取樣時間間隔來切出,以FFT(Fast Fourier Transform)來頻率解析。As shown in FIG. 3 , the elastic
取樣時間T[sec]是被設定成為:若將所欲檢測出之產生於切削後的切削溝(切口)的切削進給方向的屑大小或龜裂大小設為W[μm],將切削進給手段18(參照圖1)的進給速度設為S[mm/sec],則符合次式(1)的條件。 (1) T≦W/(S×1000)[sec] 如此,取樣時間T是被設定成比切削刀刃43通過屑大小(龜裂大小)W的所要時間更短。The sampling time T [sec] is set so that if the chip size or crack size in the cutting feed direction generated in the cutting groove (notch) after cutting to be detected is W [μm], When the feed speed of the feeding means 18 (see FIG. 1 ) is set to S [mm/sec], the condition of the following formula (1) is satisfied. (1) T≦W/(S×1000)[sec] In this way, the sampling time T is set to be shorter than the time required for the
另外,屑大小(龜裂大小)W及進給速度S是按照被加工物W的種類或加工內容來設定。例如,在玻璃加工時,屑大小(龜裂大小)W設定於數[μm]~數百[μm],進給速度S設定於數[mm/sec]~數十[mm/sec]為理想。並且,在矽加工時,屑大小(龜裂大小)W設定於數[μm]~數十[μm],進給速度S設定於數十[mm/sec]~100[mm/sec]為理想。 In addition, the chip size (crack size) and the feed rate S are set according to the type of the workpiece W or the processing content. For example, in glass processing, it is ideal to set the chip size (crack size) W to several [μm] to several hundreds [μm] and the feed speed S to several [mm/sec] to several tens of [mm/sec]. . In addition, in the case of silicon processing, the chip size (crack size) W is preferably set to several [μm] to several tens of [μm], and the feed speed S is preferably set to several tens of [mm/sec] to 100 [mm/sec]. .
判斷手段77是從根據解析手段76的頻率解析結果中所含的峰值來判斷檢測對象的屑等的有無。當頻率解析結果的峰值為臨界值以上時,判斷成在切削加工中發生對象大小以上的屑等,對於操作員報知屑等的發生。當頻率解析結果的峰值比臨界值更小時,判斷成在切削加工中未發生對象大小以上的屑等,繼續切削加工。另外,屑等的判定用的臨界值是亦可使用實驗性、經驗性或理論性地謀求的值。 The judging means 77 judges the presence or absence of chips or the like to be detected from the peaks included in the frequency analysis result based on the analysis means 76 . When the peak value of the frequency analysis result is equal to or larger than the threshold value, it is determined that chips or the like larger than the target size are generated during cutting, and the occurrence of the chips or the like is notified to the operator. When the peak value of the frequency analysis result is smaller than the threshold value, it is determined that chips or the like larger than the target size are not generated during the cutting process, and the cutting process is continued. In addition, the threshold value for determination of a chip etc. can also be calculated|required experimentally, empirically, or theoretically using the value.
又,由於取樣時間被設定短,因此被取樣的資料數少,表示屑等的峰值難被周邊雜訊埋沒。又,由於短時間重複頻率解析,因此可從檢測出屑等的峰值的取樣時間,特定屑等在被加工物W的切削進給方向的發生位置。如此,藉由按照成為檢測對象的屑等的大小與切削進給手段18的進給速度來設定取樣時間,可從彈性波檢測感測器71的振動波形來適當地檢測出檢測對象的屑等。
In addition, since the sampling time is set short, the number of data to be sampled is small, and the peaks indicating chips and the like are less likely to be buried by the surrounding noise. In addition, since the frequency analysis is repeated in a short time, it is possible to identify the occurrence position of the chip or the like in the cutting feed direction of the workpiece W from the sampling time at which the peak value of the chip or the like is detected. In this way, by setting the sampling time according to the size of the chips to be detected and the feed speed of the cutting feed means 18 , the chips or the like to be detected can be appropriately detected from the vibration waveform of the elastic
並且,在切削裝置1是設有報知手段78,其係在判斷手段77被判斷成產生屑等時,報知其意旨。藉此,可報知操作員在切削加工中產生檢測對象的屑,督促維修作業等。另外,控制手段75的各部是藉由實行各種處理的處理器及記憶體等所構成。記憶體是按照用途以ROM
(Read Only Memory)、RAM(Random Access Memory)等的一個或複數個的記憶媒體所構成。在記憶體中記憶有例如裝置各部的驅動控制用的程式或屑等的檢測用的程式。
In addition, the
參照圖4及圖5A,圖5B來說明屑或龜裂的檢測。圖4是本實施形態的屑等的檢測處理的說明圖。圖5A,圖5B是表示對應於取樣時間的頻率解析的一例的圖。另外,圖5A是表示將取樣時間設為T1時的本實施形態的頻率解析,圖5B是表示將取樣時間設為T2時的比較例的頻率解析。並且,在此是說明有關在被加工物的表面產生屑的一例,但在被加工物的表面產生龜裂時也可以同樣的方法檢測出。 The detection of chips or cracks will be described with reference to FIGS. 4 and 5A and 5B . FIG. 4 is an explanatory diagram of detection processing of chips and the like according to the present embodiment. 5A and 5B are diagrams showing an example of frequency analysis according to sampling time. 5A is a frequency analysis showing the present embodiment when the sampling time is T1, and FIG. 5B is a frequency analysis showing a comparative example when the sampling time is T2. In addition, an example of generation of chips on the surface of the workpiece is described here, but when cracks are generated on the surface of the workpiece, it can be detected by the same method.
如圖4所示般,若以切削刀刃43(參照圖2)來切削被加工物W,則在被加工物W的表面形成有切口(切削溝)81。在切口邊緣82是微細的屑85或成為檢測對象的屑86會沿著切削進給方向來突發性地發生。在此,如上述般,取樣時間T1是按照成為檢測對象的屑86的大小與切削加工的進給速度來設定。亦即,取樣時間T1會被設定在切削刀刃43通過屑大小的所要時間以下。因此,可在時間軸方向仔細檢測出屑86的發生位置。
As shown in FIG. 4 , when the workpiece W is cut with the cutting edge 43 (see FIG. 2 ), a notch (cutting groove) 81 is formed on the surface of the workpiece W. As shown in FIG. The
例如圖5A所示般,本實施形態是切削加工時的連續性的振動波形會按每個取樣時間T1(例如1msec)切出而頻率解析。由於取樣時間T1被設定短,因此被取樣的資料數少,頻率分解能變低。即使在切削加工中產生檢測對象的屑86,也無法精度佳檢測出表示屑86的峰值成立的頻率,但可辨識臨界值以上的峰值成立於一定的頻帶的情形。亦即,可在取樣時間T1內檢測出是否產生檢測對象的屑86。For example, as shown in FIG. 5A , in the present embodiment, the continuous vibration waveform during cutting is cut out for every sampling time T1 (eg, 1 msec), and the frequency is analyzed. Since the sampling time T1 is set short, the number of data to be sampled is small, and the frequency resolution can be reduced. Even if the
又,由於取樣時間T1被設定短,因此檢測對象的屑86與其他的微細的屑85是難以同時被檢測出。所以,在表示檢測對象的屑86的峰值的周邊,其他的微細的屑85難作為周邊雜訊出現,可檢測出檢測對象的屑86的峰值。又,由於按每個取樣時間T1的經過實施頻率變換,因此以取樣時間T1單位來判斷檢測對象的屑86的有無。所以,可由在切削加工中產生屑86的時序來檢測出在被加工物W上的屑86的發生位置。In addition, since the sampling time T1 is set short, it is difficult to detect the
另一方面,如圖5B所示般,比較例是切削加工時的連續性的振動波形會按每個取樣時間T2(例如100msec)切出而頻率解析。取樣時間T2是被設定成比取樣時間T1更長的時間。由於取樣時間T2被設定長,因此被取樣的資料數多,頻率分解能變高。由於頻率分解能高,因此可精度佳檢測出峰值成立的頻率,但除了成為檢測對象的屑86以外,微細的屑85等也會作為周邊雜訊出現,表示屑86的峰值會難以找出。On the other hand, as shown in FIG. 5B , in the comparative example, the continuous vibration waveform during cutting is cut out every sampling time T2 (for example, 100 msec), and the frequency is analyzed. The sampling time T2 is set to be longer than the sampling time T1. Since the sampling time T2 is set to be long, the number of data to be sampled is large, and the frequency resolution can be increased. Since the frequency resolution is high, the frequency at which the peak is established can be detected with high accuracy. However, in addition to the
又,由於按每個取樣時間T2的經過實施頻率變換,因此以取樣時間T2單位來判斷檢測對象的屑86的有無。由於取樣時間T2長,因此即使在取樣時間T2內檢測出檢測對象的屑86,也無法特定切削加工中的屑86產生的時序。所以,就比較例的頻率解析而言,雖可精度佳特定峰值成立的頻率,但無法特定屑86產生的時序,無法檢測出在被加工物W上的屑86的發生位置。In addition, since the frequency conversion is performed for each elapse of the sampling time T2, the presence or absence of the
如以上般,若根據本實施形態的切削裝置1,則可在考慮了切削進給速度的適當的取樣時間,從切削加工時的彈性波的連續性的時間軸波形切出而頻率解析。由於以配合屑大小或龜裂大小的適當的取樣時間切出而頻率解析,因此可檢測出切削加工中的屑或龜裂的發生,且可特定屑或龜裂的發生位置。As described above, according to the
另外,在本實施形態中,舉AE感測器為例說明彈性波檢測感測器,但並不限於此。彈性波檢測感測器是只要可檢測出彈性波即可,例如,亦可為振動感測器。又,AE感測器是亦可為可取得特定頻率高的感度的共振型AE感測器、可在寬頻帶取得一定的感度的寬頻帶型AE感測器、內藏前置放大器的前置放大器內藏型AE感測器的哪個所構成。又,共振型AE感測器是亦可先設置共振頻率不同的複數的振動子(壓電元件),按照加工條件等來適當選擇。In addition, in this embodiment, the elastic wave detection sensor is described by taking the AE sensor as an example, but it is not limited to this. The elastic wave detection sensor may be a vibration sensor as long as it can detect elastic waves, for example. In addition, the AE sensor may be a resonance type AE sensor that can obtain a high sensitivity at a specific frequency, a broadband type AE sensor that can obtain a certain sensitivity in a wide frequency band, or a preamp with a built-in preamplifier. Which of the AE sensors with built-in amplifier is constituted. In addition, in the resonance type AE sensor, a plurality of vibrators (piezoelectric elements) having different resonance frequencies may be provided in advance, and it may be appropriately selected according to processing conditions and the like.
又,彈性波檢測感測器的振動子是例如以鈦酸鋇(BaTiO3 )、鈦酸鋯酸鉛(Pb(Zi,Ti)O3 )、鈮酸鋰(LiNbO3 )、鉭酸鋰(LiTaO3 )等的陶瓷所形成。Further, the vibrator of the elastic wave detection sensor is made of, for example, barium titanate (BaTiO 3 ), lead zirconate titanate (Pb(Zi,Ti)O 3 ), lithium niobate (LiNbO 3 ), lithium tantalate ( LiTaO 3 ) and other ceramics.
又,本實施形態中,切割膠帶是除了在膠帶基材塗佈黏著層的通常的黏著膠帶以外,亦可為在膠帶基材貼著DAF的DAF(Dai Attach Film)膠帶。In addition, in the present embodiment, the dicing tape may be a DAF (Dai Attach Film) tape in which DAF is attached to the tape substrate, in addition to the normal adhesive tape in which the adhesive layer is coated on the tape substrate.
又,本實施形態中,解析手段為利用FFT來頻率解析彈性波的時間軸波形的構成,但並不限於此構成。解析手段是只要為在取樣時間切出彈性波的連續性的時間軸波形來頻率解析的構成即可,例如,亦可利用DFT (Discrete Fourier Transform)來頻率解析彈性波的時間軸波形。In addition, in the present embodiment, the analysis means is a configuration of frequency-analyzing the time-axis waveform of the elastic wave by using FFT, but it is not limited to this configuration. The analysis means may be configured to frequency analyze the time-axis waveform obtained by cutting out the continuity of the elastic wave at the sampling time. For example, the time-axis waveform of the elastic wave may be frequency-analyzed using DFT (Discrete Fourier Transform).
又,本實施形態中,切削進給手段為使保持平台對於切削手段移動於切削進給方向的構成,但並不限於此構成。切削進給手段是只要為使保持平台與切削手段相對地移動於切削進給方向的構成即可,亦可使切削手段對於保持平台移動於切削進給方向。In addition, in this embodiment, although the cutting feed means is a structure which moves the holding platform in the cutting feed direction with respect to the cutting means, it is not limited to this structure. The cutting feed means may be configured so as to relatively move the holding table and the cutting means in the cutting feeding direction, and the cutting means may be moved relative to the holding table in the cutting feeding direction.
又,本實施形態中,分度進給手段為使切削手段對於保持平台移動於分度進給方向的構成,但並不限於此構成。分度進給手段是只要為使保持平台與切削手段相對地移動於與切削進給方向正交的分度進給方向的構成即可,亦可為使保持平台對於切削手段移動於分度進給方向。In addition, in this embodiment, although the index feed means is a structure which moves the cutting means in the index feed direction with respect to the holding table, it is not limited to this structure. The indexing feed means may be configured to relatively move the holding platform and the cutting means in the indexing feed direction orthogonal to the cutting feed direction, or the holding platform may be moved relative to the cutting means in the indexing feed direction. give directions.
又,本實施形態中,切入進給手段為使切削手段對於保持平台移動於切入進給方向的構成,但並不限於此構成。切入進給手段是只要為使保持平台與切削手段相對地移動於與被加工物的表面正交的切入進給方向的構成即可,亦可為使保持平台對於切削手段移動於切入進給方向即可。In addition, in the present embodiment, the cutting feeding means is a configuration for moving the cutting means in the cutting feeding direction with respect to the holding table, but it is not limited to this configuration. The plunging feed means may be configured to relatively move the holding table and the cutting means in the plunging feed direction orthogonal to the surface of the workpiece, or the holding platform may be moved relative to the cutting means in the plunging feed direction. That's it.
又,本實施形態中,彈性波檢測感測器的振動子為被安裝於切削手段的刀刃固定件的構成,但並不限於此構成。彈性波檢測感測器的振動子是只要設置於刀刃罩、主軸等的切削刀刃的振動容易傳達之處即可。In addition, in this embodiment, although the vibrator of an elastic wave detection sensor is a structure attached to the blade holder of a cutting means, it is not limited to this structure. The vibrator of the elastic wave detection sensor may be installed at a place where the vibration of the cutting blade is easily transmitted, such as a blade cover and a spindle.
又,本實施形態中,彈性波檢測感測器為被配設於切削手段的構成,但並不限於此構成。彈性波檢測感測器是亦可被配設於保持平台。In addition, in this embodiment, although the elastic wave detection sensor is a structure arrange|positioned in a cutting means, it is not limited to this structure. The elastic wave detection sensor can also be arranged on the holding platform.
又,本實施形態中,切削裝置是舉使被加工物小片化的切削裝置為例進行說明,但並不限於此構成。本發明是可適用於切削刀刃的安裝為必要的其他的切削裝置,例如修邊裝置,及具備切削裝置的群集裝置等的其他的加工裝置。In addition, in the present embodiment, the cutting device is described as an example of a cutting device for reducing the workpiece into small pieces, but the present invention is not limited to this configuration. The present invention can be applied to other cutting apparatuses, such as edge trimming apparatuses, and cluster apparatuses including cutting apparatuses, for which attachment of cutting edges is necessary.
又,作為加工對象的工件,亦可按照加工的種類,例如使用半導體裝置晶圓、光裝置晶圓、封裝基板、半導體基板、無機材料基板、氧化物晶圓、生陶瓷基板、壓電基板等的各種工件。作為半導體裝置晶圓是亦可使用裝置形成後的矽晶圓或化合物半導體晶圓。作為光裝置晶圓是亦可使用裝置形成後的藍寶石晶圓或碳化矽晶圓。又,作為封裝基板是亦可使用CSP(Chip Size Package)基板,作為半導體基板是亦可使用矽或砷化鎵等,作為無機材料基板是亦可使用藍寶石、陶瓷、玻璃等。又,作為氧化物晶圓是亦可使用裝置形成後或裝置形成前的鉭酸鋰、鈮酸鋰。In addition, as the workpiece to be processed, according to the type of processing, for example, semiconductor device wafers, optical device wafers, package substrates, semiconductor substrates, inorganic material substrates, oxide wafers, green ceramic substrates, piezoelectric substrates, etc. may be used. of various artifacts. As the semiconductor device wafer, a silicon wafer or a compound semiconductor wafer after device formation can also be used. As the optical device wafer, a sapphire wafer or a silicon carbide wafer after device formation can also be used. In addition, CSP (Chip Size Package) substrates may be used as package substrates, silicon, gallium arsenide, etc. may be used as semiconductor substrates, and sapphire, ceramics, glass, etc. may be used as inorganic material substrates. In addition, lithium tantalate and lithium niobate after device formation or before device formation can also be used as the oxide wafer.
又,本實施形態中,切削刀刃是舉在輪轂基台固定切削砥石的輪轂刀刃(hub blade)為例進行說明,但不限於此構成。切削刀刃是亦可無輪轂型的墊圈刀刃(washer blade)。In addition, in the present embodiment, the cutting blade is described by taking as an example a hub blade in which a cutting stone is fixed to a hub base, but it is not limited to this configuration. The cutting blade is a washer blade which may be of a hubless type.
又,本實施形態中,保持平台是不限於吸引吸盤式的平台,亦可為靜電吸盤式的平台。In addition, in this embodiment, the holding stage is not limited to a suction chuck type stage, and may be an electrostatic chuck type stage.
又,雖說明了本實施形態及變形例,但亦可全體地或部分地組合上述實施形態及變形例,作為本發明的其他的實施形態。In addition, although this embodiment and the modification were described, the above-mentioned embodiment and modification may be combined in whole or in part as another embodiment of the present invention.
又,本發明的實施形態是不限於上述的實施形態,亦可在不脫離本發明的技術思想的宗旨的範圍內實施各種變更、置換、變形。又,若可藉由技術的進步或衍生的別技術以別的做法來實現本發明的技術思想,則亦可使用該方法來實施。因此,申請專利範圍是覆蓋本發明的技術思想的範圍內所含的全部的實施形態。In addition, the embodiment of the present invention is not limited to the above-described embodiment, and various changes, substitutions, and deformations can be implemented within the scope of not departing from the spirit of the technical idea of the present invention. In addition, if the technical idea of the present invention can be realized by other methods through technological progress or other derived technologies, this method can also be used to implement. Therefore, the scope of the patent application covers all the embodiments included within the scope of the technical idea of the present invention.
又,本實施形態中,說明有關將本發明適用於切削裝置的構成,但亦可適用於檢測出在被加工物成為檢測對象的屑或龜裂的其他的加工裝置。 [產業上的利用可能性]In addition, in the present embodiment, the configuration in which the present invention is applied to a cutting device is described, but it can be applied to other machining devices that detect chips or cracks to be detected in the workpiece. [Industrial availability]
如以上說明般,本發明是具有在切削加工中可檢測出在被加工物成為檢測對象的屑或龜裂之效果,特別是在沿著分割預定線來切削被加工物的切削裝置有用。As described above, the present invention has the effect of detecting chips or cracks in the workpiece that are the object of detection during cutting, and is particularly useful for cutting devices that cut the workpiece along the dividing line.
1‧‧‧切削裝置15‧‧‧保持平台18‧‧‧切削進給手段30‧‧‧分度進給手段40‧‧‧切削手段43‧‧‧切削刀刃71‧‧‧彈性波檢測感測器75‧‧‧控制手段76‧‧‧解析手段81‧‧‧切口(切削溝)86‧‧‧屑W‧‧‧被加工物1‧‧‧
圖1是本實施形態的切削裝置的立體圖。 FIG. 1 is a perspective view of the cutting device according to the present embodiment.
圖2是本實施形態的切削手段的分解立體圖。 FIG. 2 is an exploded perspective view of the cutting means of the present embodiment.
圖3是模式性地表示本實施形態的切削手段的剖面等的圖。 FIG. 3 is a diagram schematically showing a cross section and the like of the cutting means according to the present embodiment.
圖4是本實施形態的屑等的檢測處理的說明圖。 FIG. 4 is an explanatory diagram of detection processing of chips and the like according to the present embodiment.
圖5A,圖5B是表示對應於取樣時間的頻率解析的一例的圖。 5A and 5B are diagrams showing an example of frequency analysis according to sampling time.
41‧‧‧主軸殼體 41‧‧‧Spindle housing
42‧‧‧主軸 42‧‧‧Spindle
43‧‧‧切削刀刃 43‧‧‧Cutting edge
44‧‧‧螺孔 44‧‧‧Screw
47‧‧‧罩構件 47‧‧‧Cover Components
48‧‧‧拖架 48‧‧‧Trailer
51‧‧‧刀刃固定件 51‧‧‧Blade fixings
52‧‧‧嵌合孔 52‧‧‧Mating hole
53‧‧‧突出部 53‧‧‧Protrusion
54‧‧‧圓形凹部 54‧‧‧Circular recess
55‧‧‧貫通孔 55‧‧‧Through Hole
56‧‧‧凸緣部 56‧‧‧Flange
58‧‧‧墊圈 58‧‧‧Gasket
59‧‧‧固定螺栓 59‧‧‧Fixing bolts
61‧‧‧輪轂基台 61‧‧‧Wheel Abutment
62‧‧‧切刃 62‧‧‧Cutting blade
63‧‧‧***孔 63‧‧‧Insert hole
65‧‧‧固定螺帽 65‧‧‧Set Nut
71‧‧‧彈性波檢測感測器 71‧‧‧Elastic wave detection sensor
72‧‧‧振動子 72‧‧‧Vibrator
73‧‧‧第1線圈手段 73‧‧‧First Coil Means
74‧‧‧第2線圈手段 74‧‧‧Second Coil Means
75‧‧‧控制手段 75‧‧‧Control means
76‧‧‧解析手段 76‧‧‧Analytical Methods
77‧‧‧判斷手段 77‧‧‧Means of judgment
78‧‧‧報知手段 78‧‧‧Means of reporting
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