TWI759447B - 太陽電池用膏狀組成物 - Google Patents

太陽電池用膏狀組成物 Download PDF

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Publication number
TWI759447B
TWI759447B TW107109708A TW107109708A TWI759447B TW I759447 B TWI759447 B TW I759447B TW 107109708 A TW107109708 A TW 107109708A TW 107109708 A TW107109708 A TW 107109708A TW I759447 B TWI759447 B TW I759447B
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TW
Taiwan
Prior art keywords
aluminum
silicon
powder
paste composition
solar cell
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TW107109708A
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English (en)
Chinese (zh)
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TW201836162A (zh
Inventor
達翰林馬瓦
中原正博
鈴木紹太
森下直哉
Original Assignee
日商東洋鋁股份有限公司
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Publication of TW201836162A publication Critical patent/TW201836162A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Glass Compositions (AREA)
TW107109708A 2017-03-27 2018-03-21 太陽電池用膏狀組成物 TWI759447B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-061532 2017-03-27
JP2017061532 2017-03-27

Publications (2)

Publication Number Publication Date
TW201836162A TW201836162A (zh) 2018-10-01
TWI759447B true TWI759447B (zh) 2022-04-01

Family

ID=63677219

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107109708A TWI759447B (zh) 2017-03-27 2018-03-21 太陽電池用膏狀組成物

Country Status (5)

Country Link
JP (1) JP7173960B2 (ja)
KR (1) KR102485772B1 (ja)
CN (1) CN110462845B (ja)
TW (1) TWI759447B (ja)
WO (1) WO2018180441A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020080341A (ja) * 2018-11-12 2020-05-28 東洋アルミニウム株式会社 ペースト組成物
JP2021057358A (ja) * 2019-09-26 2021-04-08 東洋アルミニウム株式会社 太陽電池用アルミニウムペースト
US12015091B2 (en) * 2020-09-08 2024-06-18 Toyo Aluminium Kabushiki Kaisha Conductive paste and method for producing TOPCon solar cell
CN114255905A (zh) * 2020-09-21 2022-03-29 东洋铝株式会社 导电膏及TOPCon型太阳能电池的制造方法
KR102285734B1 (ko) * 2020-11-27 2021-08-05 주식회사 제이솔루션 태양전지 모듈용 전도성 첨가제 및 이의 제조방법

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH093563A (ja) * 1995-06-22 1997-01-07 Hitachi Powdered Metals Co Ltd アルミニウム系耐摩耗性焼結合金の製造方法
JP2013143499A (ja) * 2012-01-11 2013-07-22 Toyo Aluminium Kk ペースト組成物
WO2013115076A1 (ja) * 2012-02-02 2013-08-08 東洋アルミニウム株式会社 ペースト組成物
CN103985769A (zh) * 2013-02-07 2014-08-13 茂迪股份有限公司 太阳能电池及其模组
US20160108500A1 (en) * 2014-10-15 2016-04-21 Hyundai Motor Company Alloy for die-cast vehicle parts and method for manufacturing the same
WO2016178386A1 (ja) * 2015-05-01 2016-11-10 東洋アルミニウム株式会社 Ｐｅｒｃ型太陽電池用アルミニウムペースト組成物

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JP3283550B2 (ja) * 1990-10-31 2002-05-20 住友電気工業株式会社 初晶シリコンの最大結晶粒径が１０μｍ以下の過共晶アルミニウム−シリコン系合金粉末の製造方法
JP2926976B2 (ja) * 1990-11-16 1999-07-28 住友電気工業株式会社 過共晶アルミニウム―ケイ素系ビレツトの製造方法
JP3310370B2 (ja) * 1993-01-27 2002-08-05 株式会社半導体エネルギー研究所 アモルファス太陽電池およびその作製方法
US5789077A (en) * 1994-06-27 1998-08-04 Ebara Corporation Method of forming carbide-base composite coatings, the composite coatings formed by that method, and members having thermally sprayed chromium carbide coatings
US6792187B2 (en) * 2002-12-17 2004-09-14 Corning Incorporated Ca-Al-Si oxide glasses and optical components containing the same
FR2857378B1 (fr) * 2003-07-10 2005-08-26 Pechiney Aluminium Piece moulee en alliage d'aluminium a haute resistance a chaud
JP2008294209A (ja) * 2007-05-24 2008-12-04 Mitsubishi Electric Corp 太陽電池基板の製造方法
JP2010241650A (ja) * 2009-04-08 2010-10-28 Mitsubishi Materials Techno Corp シリコンインゴットの製造方法、シリコンインゴットの製造装置及びシリコン結晶成長方法
CN101603162B (zh) * 2009-07-29 2012-05-30 福州大学 高硅铝合金的物理法变质工艺
CN102254587B (zh) * 2011-05-17 2014-05-28 陈晓东 一种硅太阳能电池铝背场用浆料及其制备方法
JP5856764B2 (ja) * 2011-06-21 2016-02-10 学校法人常翔学園 過共晶アルミニウム−シリコン合金圧延板成形品およびその製造方法
ES2684721T3 (es) * 2013-04-02 2018-10-04 Heraeus Deutschland GmbH & Co. KG Partículas que comprenden AI, Si y Mg en pastas electroconductoras y preparación de células fotovoltaicas
JP2015050349A (ja) * 2013-09-02 2015-03-16 株式会社ノリタケカンパニーリミテド 太陽電池素子およびその製造方法並びにファイヤースルー用アルミニウムペースト
CN103474486B (zh) * 2013-09-25 2015-12-23 常州天合光能有限公司 晶体硅太阳电池的背面梁桥式接触电极及其制备方法
JP2015191971A (ja) * 2014-03-27 2015-11-02 株式会社ノリタケカンパニーリミテド ファイヤースルー用アルミニウムペーストおよび太陽電池素子
CN107078177A (zh) * 2014-09-22 2017-08-18 京瓷株式会社 太阳能电池元件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH093563A (ja) * 1995-06-22 1997-01-07 Hitachi Powdered Metals Co Ltd アルミニウム系耐摩耗性焼結合金の製造方法
JP2013143499A (ja) * 2012-01-11 2013-07-22 Toyo Aluminium Kk ペースト組成物
WO2013115076A1 (ja) * 2012-02-02 2013-08-08 東洋アルミニウム株式会社 ペースト組成物
CN103985769A (zh) * 2013-02-07 2014-08-13 茂迪股份有限公司 太阳能电池及其模组
US20160108500A1 (en) * 2014-10-15 2016-04-21 Hyundai Motor Company Alloy for die-cast vehicle parts and method for manufacturing the same
WO2016178386A1 (ja) * 2015-05-01 2016-11-10 東洋アルミニウム株式会社 Ｐｅｒｃ型太陽電池用アルミニウムペースト組成物

Also Published As

Publication number Publication date
KR102485772B1 (ko) 2023-01-05
TW201836162A (zh) 2018-10-01
CN110462845B (zh) 2023-01-13
JP7173960B2 (ja) 2022-11-16
WO2018180441A1 (ja) 2018-10-04
KR20190125971A (ko) 2019-11-07
JPWO2018180441A1 (ja) 2020-02-06
CN110462845A (zh) 2019-11-15

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