TWI757561B - 熱處理方法 - Google Patents
熱處理方法 Download PDFInfo
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- TWI757561B TWI757561B TW107139605A TW107139605A TWI757561B TW I757561 B TWI757561 B TW I757561B TW 107139605 A TW107139605 A TW 107139605A TW 107139605 A TW107139605 A TW 107139605A TW I757561 B TWI757561 B TW I757561B
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Abstract
本發明提供一種能夠縮短基板相對於腔室之搬入搬出所需要之時間之熱處理方法。
本發明之熱處理方法中,於半導體晶圓降溫至可搬出溫度T3之時刻t7之前之時刻t6,開始進行用以將半導體晶圓自處理腔室搬出之搬出準備動作。又,於開始進行對於半導體晶圓之處理之時刻t2之後之時刻t3將閘閥關閉而將半導體晶圓搬入至處理腔室之動作完成。藉由使用於半導體晶圓之處理之期間與用於半導體晶圓之搬入搬出之期間重疊,能夠縮短半導體晶圓相對於處理腔室之搬入搬出所需要之時間。
Description
本發明係關於一種藉由對半導體晶圓等薄板狀精密電子基板(以下,簡稱為「基板」)照射光而加熱該基板之熱處理方法。
於半導體裝置之製造製程中,以極短時間加熱半導體晶圓之閃光燈退火(FLA)備受關注。閃光燈退火係藉由使用氙閃光燈(以下,簡單寫作「閃光燈」時意指氙閃光燈)對半導體晶圓之表面照射閃光,而僅使半導體晶圓之表面於極短時間(數毫秒以下)內升溫之熱處理技術。
氙閃光燈之放射分光分佈係紫外線區域至近紅外線區域,波長較先前之鹵素燈短,與矽之半導體晶圓之基礎吸收帶大致一致。因此,於自氙閃光燈對半導體晶圓照射閃光時,透過光較少,能夠使半導體晶圓快速地升溫。又,亦已判明若為數毫秒以下之極短時間之閃光照射,則能夠選擇性地僅使半導體晶圓之表面附近升溫。
此種閃光燈退火被用於需要極短時間之加熱之處理、例如典型而言為被注入至半導體晶圓中之雜質之活化。若對藉由離子注入法而注入有雜質之半導體晶圓之表面自閃光燈照射閃光,則能夠將該半導體晶圓之表面以極短時間升溫至活化溫度,能夠不使雜質較深地擴散而僅執行雜質活化。
於專利文獻1中,揭示有如下閃光燈退火裝置:於利用配置於處理腔室之下方之鹵素燈對半導體晶圓進行預加熱之後,自配置於處理腔室上方之閃光燈對半導體晶圓之表面照射閃光。於專利文獻1中揭示之裝置中,進行如下晶圓更換而對複數片半導體晶圓依序進行處理,上述晶圓更換係指利用搬送機器人自處理腔室取出加熱處理後之半導體晶圓,並且將未處理之半導體晶圓搬入至處理腔室。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本專利特開2018-6513號公報
[發明所欲解決之問題]
於專利文獻1中所揭示之裝置中,於將加熱處理後之半導體晶圓自處理腔室搬出時,當半導體晶圓降溫至特定溫度以下之後,交接用之移載臂驅動,並且處理腔室之閘閥打開。又,於將未處理之半導體晶圓搬入至處理腔室時,移載臂及閘閥亦隨之驅動。由於其等之驅動需要相應之時間,故而結果產生半導體晶圓之搬入搬出所需要之時間變長之問題。
本發明係鑒於上述問題而完成者,其目的在於提供一種能夠縮短基板相對於腔室之搬入搬出所需要之時間之熱處理方法。
[解決問題之技術手段]
為了解決上述問題,技術方案1之發明係一種藉由對基板照射光而將該基板加熱之熱處理方法,其特徵在於具備:加熱步驟,其係對在腔室內保持於晶座之第1基板自燈照射光而將該第1基板加熱;及冷卻步驟,其係將上述燈熄滅且將上述第1基板冷卻至能夠自上述腔室搬出之可搬出溫度;且於上述第1基板降溫至上述可搬出溫度之前,開始進行用以將上述第1基板自上述腔室搬出之搬出準備動作。
又,根據技術方案1之發明之熱處理方法,技術方案2之發明之特徵在於:上述搬出準備動作包括以下步驟:將設置於供基板相對於上述腔室搬入搬出之搬送開口部之閘閥打開;及使相對於上述晶座進行基板之移載之移載臂自較上述晶座更靠外側之退避位置移動至上述晶座之下方之移載動作位置,並且使上述移載臂上升而使豎立設置於上述移載臂之頂起銷突出至較上述晶座更靠上方,從而接收上述第1基板。
又,根據技術方案2之發明之熱處理方法,技術方案3之發明之特徵在於進而具備如下搬出步驟,即,設置於上述腔室外部之搬送機器人之搬送機器手自上述頂起銷接收已降溫至上述可搬出溫度之上述第1基板,並將其自上述腔室搬出,且於上述第1基板自上述腔室被搬出之後,上述移載臂亦不返回至上述退避位置,而是於上述移載動作位置待機。
又,根據技術方案3之發明之熱處理方法,技術方案4之發明之特徵在於:於上述搬送機器手接收上述第1基板並自上述搬送開口部退出之後至停止為止之移動期間內,判定上述搬送機器手上是否保持有上述第1基板。
又,根據技術方案4之發明之熱處理方法,技術方案5之發明之特徵在於進而具備如下搬入步驟,即,於上述第1基板自上述腔室被搬出之後,上述搬送機器人之上述搬送機器手將第2基板自上述搬送開口部搬入至上述腔室內,且於上述第2基板被搬入至上述腔室內且開始進行對於上述第2基板之處理之後,將上述閘閥關閉。
又,根據技術方案5之發明之熱處理方法,技術方案6之發明之特徵在於:將上述第2基板搬入至上述腔室內之後,一面對上述腔室供給處理氣體,一面將上述閘閥關閉。
[發明之效果]
根據技術方案1至技術方案6之發明,由於在第1基板降溫至可搬出溫度之前,開始進行用以將第1基板自腔室搬出之搬出準備動作,故而係於第1基板之處理期間內開始進行搬出準備動作,能夠縮短基板相對於腔室之搬入搬出所需要之時間。
尤其是,根據技術方案3之發明,由於在第1基板自腔室被搬出之後,移載臂亦不返回至退避位置,而是於移載動作位置待機,故而能夠縮短移載臂於退避位置與移載動作位置之間移動所需要之時間。
尤其是,根據技術方案4之發明,由於在搬送機器手接收第1基板並自搬送開口部退出之後至停止為止之移動期間內,判定搬送機器手上是否保持有第1基板,故而能夠縮短判定有無基板所需要之時間。
尤其是,根據技術方案5之發明,由於在第2基板被搬入至腔室內並開始進行對於第2基板之處理之後將閘閥關閉,故而係於第2基板之搬入動作完成之前開始處理,能夠進一步縮短基板相對於腔室之搬入搬出所需要之時間。
以下,一面參照圖式,一面對本發明之實施形態詳細地進行說明。
首先,對用以實施本發明之熱處理方法之熱處理裝置進行說明。圖1係表示本發明之熱處理方法中使用之熱處理裝置100之俯視圖,圖2係其前視圖。熱處理裝置100係對作為基板之圓板形狀之半導體晶圓W照射閃光而將該半導體晶圓W加熱之閃光燈退火裝置。成為處理對象之半導體晶圓W之尺寸並無特別限定,例如為300 mm或450 mm。被搬入至熱處理裝置100之前之半導體晶圓W中注入有雜質,藉由利用熱處理裝置100所進行之加熱處理來對所注入之雜質執行活化處理。再者,於圖1及以後之各圖中,為了容易理解,視需要將各部之尺寸或數量誇張或簡化地描繪。又,於圖1~圖3之各圖中,為了明確其等之方向關係,標註有將Z軸方向設為鉛直方向且將XY平面設為水平面之XYZ正交座標系統。
如圖1及圖2所示,熱處理裝置100具備:分度器部101,其係用以將未處理之半導體晶圓W自外部搬入至裝置內並且將處理過之半導體晶圓W搬出至裝置外;對準部230,其進行未處理之半導體晶圓W之定位;2個冷卻部130、140,其等進行加熱處理後之半導體晶圓W之冷卻;熱處理部160,其對半導體晶圓W實施閃光加熱處理;以及搬送機器人150,其相對於冷卻部130、140及熱處理部160進行半導體晶圓W之交接。又,熱處理裝置100具備控制設置於上述各處理部之動作機構及搬送機器人150而使半導體晶圓W之閃光加熱處理進行之控制部3。
分度器部101具備:負載埠110,其將複數個載子C(於本實施形態中為2個)並排載置;及交接機器人120,其自各載子C取出未處理之半導體晶圓W,並且將處理過之半導體晶圓W收納於各載子C。收容有未處理之半導體晶圓W之載子C係由無人搬送車(AGV(Automatic Guided Vehicle,自動導引車)、OHT(overhead transport,懸吊式搬運系統))等搬送並被載置於負載埠110,並且收容有處理過之半導體晶圓W之載子C係由無人搬送車自負載埠110被拿走。
又,於負載埠110中,使載子C構成為能夠如圖2之箭頭CU所示般進行升降移動,以使交接機器人120能夠相對於載子C進行任意半導體晶圓W之進出。再者,作為載子C之形態,除了將半導體晶圓W收納於密閉空間之FOUP(front opening unified pod,前開式晶圓盒)以外,亦可為SMIF(Standard Mechanical Inter Face,標準機械界面)箱或將所收納之半導體晶圓W暴露於外部大氣之OC(open cassette,開放式卡匣)。
又,交接機器人120能夠進行如圖1之箭頭120S所示般之滑動移動、及如箭頭120R所示般之回轉動作及升降動作。藉此,交接機器人120相對於2個載子C進行半導體晶圓W之進出,並且相對於對準部230及2個冷卻部130、140進行半導體晶圓W之交接。利用交接機器人120所進行之半導體晶圓W相對於載子C之進出係藉由機器手121之滑動移動、及載子C之升降移動而進行。又,交接機器人120與對準部230或冷卻部130、140之半導體晶圓W之交接係藉由機器手121之滑動移動、及交接機器人120之升降動作而進行。
對準部230係連接於沿著Y軸方向之分度器部101之側方而設置。對準部230係使半導體晶圓W於水平面內旋轉而朝向適合閃光加熱之方向之處理部。對準部230係於作為鋁合金製殼體之對準腔室231之內部設置將半導體晶圓W以水平姿勢支持並使之旋轉之機構、及對形成於半導體晶圓W之周緣部之凹口或定向平面等進行光學檢測之機構等而構成。
半導體晶圓W向對準部230之交接係由交接機器人120進行。自交接機器人120向對準腔室231係以晶圓中心位於特定位置之方式交付半導體晶圓W。於對準部230中,使半導體晶圓W以自分度器部101接收到之半導體晶圓W之中心部作為旋轉中心繞鉛直方向軸旋轉,藉由對凹口等進行光學檢測而調整半導體晶圓W之方向。方向調整結束後之半導體晶圓W係由交接機器人120自對準腔室231取出。
作為利用搬送機器人150搬送之半導體晶圓W之搬送空間,設置有收容搬送機器人150之搬送腔室170。於該搬送腔室170之三側連通地連接有熱處理部160之處理腔室6、冷卻部130之第1冷卻腔室131及冷卻部140之第2冷卻腔室141。
作為熱處理裝置100之主要部之熱處理部160係對進行了預加熱之半導體晶圓W照射來自氙閃光燈FL之閃爍光(閃光(flash light))而進行閃光加熱處理之基板處理部。該熱處理部160之構成將進一步於下文中敍述。
2個冷卻部130、140具備大致相同之構成。冷卻部130、140分別於作為鋁合金製殼體之第1冷卻腔室131、第2冷卻腔室141之內部,具備金屬製冷卻板、及載置於其上表面之石英板(均省略圖示)。該冷卻板係藉由珀爾帖元件或恆溫水循環而調溫至常溫(約23℃)。於熱處理部160中已被實施了閃光加熱處理之半導體晶圓W被搬入至第1冷卻腔室131或第2冷卻腔室141,且被載置於該石英板而被冷卻。
第1冷卻腔室131及第2冷卻腔室141均於分度器部101與搬送腔室170之間連接於該等兩者。於第1冷卻腔室131及第2冷卻腔室141中,形成設置有供半導體晶圓W搬入搬出之2個開口。第1冷卻腔室131之2個開口中連接於分度器部101之開口藉由閘閥181而能夠開閉。另一方面,第1冷卻腔室131之連接於搬送腔室170之開口藉由閘閥183而能夠開閉。即,第1冷卻腔室131與分度器部101經由閘閥181而連接,第1冷卻腔室131與搬送腔室170經由閘閥183而連接。
當於分度器部101與第1冷卻腔室131之間進行半導體晶圓W之交接時,閘閥181被打開。又,當於第1冷卻腔室131與搬送腔室170之間進行半導體晶圓W之交接時,閘閥183被打開。當閘閥181及閘閥183被封閉時,第1冷卻腔室131之內部成為密閉空間。
又,第2冷卻腔室141之2個開口中連接於分度器部101之開口藉由閘閥182而能夠開閉。另一方面,第2冷卻腔室141之連接於搬送腔室170之開口藉由閘閥184而能夠開閉。即,第2冷卻腔室141與分度器部101經由閘閥182而連接,第2冷卻腔室141與搬送腔室170經由閘閥184而連接。
當於分度器部101與第2冷卻腔室141之間進行半導體晶圓W之交接時,閘閥182被打開。又,當於第2冷卻腔室141與搬送腔室170之間進行半導體晶圓W之交接時,閘閥184被打開。當閘閥182及閘閥184被封閉時,第2冷卻腔室141之內部成為密閉空間。
進而,冷卻部130、140分別具備對第1冷卻腔室131、第2冷卻腔室141供給潔淨之氮氣之氣體供給機構、及將腔室內之氣體排出之排氣機構。該等氣體供給機構及排氣機構亦可設為能夠將流量切換為2個階段。
設置於搬送腔室170中之搬送機器人150被設為能夠以沿著鉛直方向之軸為中心如箭頭150R所示般回轉。搬送機器人150具有包含複數個臂段之2個連桿機構,於該等2個連桿機構之前端分別設置有保持半導體晶圓W之搬送機器手151a、151b。該等搬送機器手151a、151b沿上下隔開特定間距地配置,且能夠藉由連桿機構而分別獨立地沿同一水平方向直線地滑動移動。又,搬送機器人150係藉由使設置有2個連桿機構之基座升降移動,而使2個搬送機器手151a、151b保持隔開特定間距之狀態地升降移動。
當搬送機器人150以第1冷卻腔室131、第2冷卻腔室141或熱處理部160之處理腔室6作為交接對象而進行半導體晶圓W之交接(進出)時,首先,兩搬送機器手151a、151b以與交接對象對向之方式回轉,其後(或於回轉之期間內)升降移動而使任一搬送機器手位於與交接對象交接半導體晶圓W之高度。然後,使搬送機器手151a(151b)沿水平方向直線地滑動移動而與交接對象進行半導體晶圓W之交接。
搬送機器人150與交接機器人120之半導體晶圓W之交接可經由冷卻部130、140而進行。即,冷卻部130之第1冷卻腔室131及冷卻部140之第2冷卻腔室141亦作為用以於搬送機器人150與交接機器人120之間交接半導體晶圓W之通路而發揮功能。具體而言,藉由使搬送機器人150或交接機器人120中之一者交付至第1冷卻腔室131或第2冷卻腔室141之半導體晶圓W由另一者接收,而進行半導體晶圓W之交接。
如上所述,於第1冷卻腔室131及第2冷卻腔室141與分度器部101之間分別設置有閘閥181、182。又,於搬送腔室170與第1冷卻腔室131及第2冷卻腔室141之間分別設置有閘閥183、184。進而,於搬送腔室170與熱處理部160之處理腔室6之間設置有閘閥185。當於熱處理裝置100內搬送半導體晶圓W時,適當地將該等閘閥開閉。
又,於搬送腔室170之內部設置有晶圓感測器155(圖2)。晶圓感測器155包含投光受光感測器,判定搬送機器人150之搬送機器手151a(151b)上是否保持有半導體晶圓W。具體而言,晶圓感測器155當所投射之光被遮蔽時判定為搬送機器手151a(151b)上保持有半導體晶圓W,當未被遮蔽時判定為搬送機器手151a(151b)上未保持半導體晶圓W。於搬送機器人150相對於處理腔室6進行半導體晶圓W之交接時,搬送機器手151a(151b)沿特定路徑移動。晶圓感測器155於搬送機器手151a(151b)通過其特定路徑之特定位置時,判定搬送機器手151a(151b)上是否保持有半導體晶圓W。進而,對於搬送腔室170及對準腔室231亦自氣體供給部供給氮氣,並且利用排氣部將其等之內部之氣體排出(均省略圖示)。
其次,對熱處理部160之構成進行說明。圖3係表示熱處理部160之構成之縱剖視圖。熱處理部160具備:處理腔室6,其收容半導體晶圓W並進行加熱處理;閃光燈室5,其內置複數個閃光燈FL;及鹵素燈室4,其內置複數個鹵素燈HL。於處理腔室6之上側設置有閃光燈室5,並且於下側設置有鹵素燈室4。又,熱處理部160於處理腔室6之內部具備:保持部7,其將半導體晶圓W保持為水平姿勢;及移載機構10,其於保持部7與搬送機器人150之間進行半導體晶圓W之交接。
處理腔室6係於筒狀之腔室側部61之上下安裝石英製腔室窗而構成。腔室側部61具有上下開口之概略筒形狀,於上側開口安裝上側腔室窗63而閉合,於下側開口安裝下側腔室窗64而閉合。構成處理腔室6之頂壁之上側腔室窗63係由石英形成之圓板形狀構件,作為使自閃光燈FL出射之閃光透過至處理腔室6內之石英窗而發揮功能。又,構成處理腔室6之底板部之下側腔室窗64亦為由石英形成之圓板形狀構件,作為使來自鹵素燈HL之光透過至處理腔室6內之石英窗而發揮功能。
又,於腔室側部61之內側壁面之上部安裝有反射環68,於下部安裝有反射環69。反射環68、69均形成為圓環狀。上側之反射環68係藉由自腔室側部61之上側嵌入而安裝。另一方面,下側之反射環69係藉由自腔室側部61之下側嵌入並利用省略圖示之螺釘固定而安裝。即,反射環68、69均裝卸自如地安裝於腔室側部61。處理腔室6之內側空間、即由上側腔室窗63、下側腔室窗64、腔室側部61及反射環68、69所包圍之空間被界定為熱處理空間65。
藉由在腔室側部61安裝反射環68、69,而於處理腔室6之內壁面形成凹部62。即,形成由腔室側部61之內壁面中未安裝反射環68、69之中央部分、反射環68之下端面、及反射環69之上端面所包圍之凹部62。凹部62沿水平方向呈圓環狀地形成於處理腔室6之內壁面,且圍繞於保持半導體晶圓W之保持部7。腔室側部61及反射環68、69係由強度及耐熱性優異之金屬材料(例如,不鏽鋼)形成。
又,於腔室側部61,形成設置有用以相對於處理腔室6進行半導體晶圓W之搬入及搬出之搬送開口部(爐口)66。搬送開口部66被設為能夠藉由閘閥185而開閉。搬送開口部66連通地連接於凹部62之外周面。因此,當閘閥185將搬送開口部66打開時,能夠進行半導體晶圓W自搬送開口部66通過凹部62向熱處理空間65之搬入、及半導體晶圓W自熱處理空間65之搬出。又,若閘閥185將搬送開口部66封閉,則處理腔室6內之熱處理空間65被設為密閉空間。
又,於處理腔室6之內壁上部形成設置有對熱處理空間65供給處理氣體之氣體供給孔81。氣體供給孔81形成設置於較凹部62更靠上側位置,亦可設置於反射環68。氣體供給孔81經由呈圓環狀形成於處理腔室6之側壁內部之緩衝空間82而連通地連接於氣體供給管83。氣體供給管83連接於處理氣體供給源85。又,於氣體供給管83之路徑中途介插有閥84。若將閥84打開,則處理氣體自處理氣體供給源85被輸送至緩衝空間82。流入至緩衝空間82之處理氣體以於流體阻力小於氣體供給孔81之緩衝空間82內擴散之方式流動,而自氣體供給孔81被供給至熱處理空間65內。作為處理氣體,可使用氮氣(N2
)等惰性氣體、或氫氣(H2
)、氨(NH3
)等反應性氣體(於本實施形態中為氮氣)。
另一方面,於處理腔室6之內壁下部形成設置有將熱處理空間65內之氣體排出之氣體排氣孔86。氣體排氣孔86形成設置於較凹部62更靠下側位置,亦可設置於反射環69。氣體排氣孔86經由呈圓環狀形成於處理腔室6之側壁內部之緩衝空間87而連通地連接於氣體排氣管88。氣體排氣管88連接於排氣機構190。又,於氣體排氣管88之路徑中途介插有閥89。若將閥89打開,則熱處理空間65之氣體自氣體排氣孔86經過緩衝空間87而被排出至氣體排氣管88。再者,氣體供給孔81及氣體排氣孔86既可沿處理腔室6之周向設置有複數個,亦可為狹縫狀之孔。又,處理氣體供給源85及排氣機構190既可為設置於熱處理裝置100之機構,亦可為設置有熱處理裝置100之輔助設備。
又,於搬送開口部66之前端亦連接有將熱處理空間65內之氣體排出之氣體排氣管191。氣體排氣管191經由閥192而連接於排氣機構190。藉由將閥192打開,而經由搬送開口部66將處理腔室6內之氣體排出。
圖4係表示保持部7之整體外觀之立體圖。保持部7具備基台環71、連結部72及晶座74而構成。基台環71、連結部72及晶座74中之任一者均由石英形成。即,保持部7之整體由石英形成。
基台環71係圓環形狀之一部分欠缺之圓弧形狀之石英構件。該欠缺部分係為了防止下述移載機構10之移載臂11與基台環71之干涉而設置。基台環71藉由載置於凹部62之底面,而由處理腔室6之壁面支持(參照圖3)。於基台環71之上表面,沿其圓環形狀之周向豎立設置有複數個連結部72(於本實施形態中為4個)。連結部72亦為石英構件,藉由熔接而固著於基台環71。
晶座74係由設置於基台環71之4個連結部72支持。圖5係晶座74之俯視圖。又,圖6係晶座74之剖視圖。晶座74具備保持板75、導引環76及複數個基板支持銷77。保持板75係由石英形成之大致圓形之平板狀構件。保持板75之直徑大於半導體晶圓W之直徑。即,保持板75具有大於半導體晶圓W之平面尺寸。
於保持板75之上表面周緣部設置有導引環76。導引環76係具有大於半導體晶圓W之直徑之內徑的圓環形狀之構件。例如,於半導體晶圓W之直徑為300 mm之情形時,導引環76之內徑為320 mm。導引環76之內周被設為如自保持板75朝向上方變寬般之傾斜面。導引環76係由與保持板75相同之石英形成。導引環76既可設為熔接於保持板75之上表面,亦可設為藉由另外加工之銷等固定於保持板75。或者,還可設為將保持板75與導引環76作為一體之構件加工。
保持板75之上表面中較導引環76更靠內側之區域被設為保持半導體晶圓W之平面狀之保持面75a。於保持板75之保持面75a,豎立設置有複數個基板支持銷77。於本實施形態中,沿保持面75a之與外周圓(導引環76之內周圓)為同心圓之圓周上每隔30°豎立設置有共計12個基板支持銷77。配置有12個基板支持銷77之圓之直徑(相對向之基板支持銷77間之距離)小於半導體晶圓W之直徑,若半導體晶圓W之直徑為300 mm,則上述圓之直徑為270 mm~280 mm(於本實施形態中為270 mm)。各個基板支持銷77係由石英形成。複數個基板支持銷77既可設為藉由熔接而設置於保持板75之上表面,亦可設為與保持板75一體地加工。
返回至圖4,豎立設置於基台環71之4個連結部72與晶座74之保持板75之周緣部藉由熔接而固著。即,晶座74與基台環71係藉由連結部72而固定地連結。藉由使此種保持部7之基台環71支持於處理腔室6之壁面,而將保持部7安裝於處理腔室6。於保持部7安裝於處理腔室6之狀態下,晶座74之保持板75成為水平姿勢(法線與鉛直方向一致之姿勢)。即,保持板75之保持面75a成為水平面。
被搬入至處理腔室6之半導體晶圓W以水平姿勢載置並保持在安裝於處理腔室6之保持部7之晶座74之上。此時,半導體晶圓W由豎立設置於保持板75上之12個基板支持銷77支持而保持於晶座74。更嚴格而言,12個基板支持銷77之上端部接觸於半導體晶圓W之下表面而支持該半導體晶圓W。由於12個基板支持銷77之高度(自基板支持銷77之上端至保持板75之保持面75a為止之距離)均一,故而能夠利用12個基板支持銷77將半導體晶圓W支持為水平姿勢。
又,半導體晶圓W係由複數個基板支持銷77與保持板75之保持面75a隔開特定間隔地支持。導引環76之厚度大於基板支持銷77之高度。因此,可藉由導引環76來防止由複數個基板支持銷77所支持之半導體晶圓W之水平方向之位置偏移。
又,如圖4及圖5所示,於晶座74之保持板75中,沿上下貫通地形成有開口部78。開口部78係為了供放射溫度計20(參照圖3)接收自保持於晶座74之半導體晶圓W之下表面放射之放射光(紅外光)而設置。即,放射溫度計20經由開口部78接收自保持於晶座74之半導體晶圓W之下表面放射之光,而測定該半導體晶圓W之溫度。進而,於晶座74之保持板75中,穿設有為了交接半導體晶圓W而供下述移載機構10之頂起銷12貫通之4個貫通孔79。
圖7係移載機構10之俯視圖。又,圖8係移載機構10之側視圖。移載機構10具備2條移載臂11。移載臂11被設為如沿著大致圓環狀之凹部62般之圓弧形狀。於各個移載臂11中豎立設置有2根頂起銷12。各移載臂11被設為藉由水平移動機構13而能夠旋動。水平移動機構13使一對移載臂11於相對於保持部7進行半導體晶圓W之移載之移載動作位置(圖7之實線位置)與和保持部7所保持之半導體晶圓W俯視時不重疊之退避位置(圖7之雙點劃線位置)之間水平移動。移載動作位置係晶座74之下方,退避位置係較晶座74更靠外側。作為水平移動機構13,既可為利用個別之馬達使各移載臂11分別旋動者,亦可為使用連桿機構並利用1個馬達使一對移載臂11連動地旋動者。
又,一對移載臂11係利用升降機構14而與水平移動機構13一併升降移動。若升降機構14使一對移載臂11於移載動作位置上升,則共計4根頂起銷12通過穿設於晶座74之貫通孔79(參照圖4、5),且頂起銷12之上端自晶座74之上表面突出。另一方面,若升降機構14使一對移載臂11於移載動作位置下降而將頂起銷12自貫通孔79拔出,且水平移動機構13使一對移載臂11以打開之方式移動,則各移載臂11移動至退避位置。一對移載臂11之退避位置為保持部7之基台環71之正上方。由於基台環71載置於凹部62之底面,故而移載臂11之退避位置成為凹部62之內側。再者,於移載機構10之設置有驅動部(水平移動機構13及升降機構14)之部位之附近亦設置有省略圖示之排氣機構,且構成為將移載機構10之驅動部周邊之氣體排出至處理腔室6之外部。
返回至圖3,設置於處理腔室6之上方之閃光燈室5中,於殼體51之內側,具備包含多根(於本實施形態中為30根)氙閃光燈FL之光源、及以覆蓋該光源之上方之方式設置之反射器52。又,於閃光燈室5之殼體51之底部安裝有燈光放射窗53。構成閃光燈室5之底板部之燈光放射窗53係由石英形成之板狀石英窗。藉由將閃光燈室5設置於處理腔室6之上方,使得燈光放射窗53與上側腔室窗63相對向。閃光燈FL自處理腔室6之上方經由燈光放射窗53及上側腔室窗63而對熱處理空間65照射閃光。
複數個閃光燈FL分別為具有長條之圓筒形狀之棒狀燈,且以各者之長度方向沿著保持部7所保持之半導體晶圓W之主面(即沿水平方向)成為相互平行之方式排列成平面狀。因此,由閃光燈FL之排列所形成之平面亦為水平面。
氙閃光燈FL具備:棒狀玻璃管(放電管),其內部封入有氙氣且兩端部配設著連接於電容器之陽極及陰極;以及觸發電極,其附設於該玻璃管之外周面上。由於氙氣為電性絕緣體,故而即便於電容器中儲存有電荷,於通常狀態下玻璃管內亦不會有電流過。然而,於對觸發電極施加高電壓而破壞了絕緣之情形時,電容器中所儲存之電於玻璃管內瞬間流過,藉由此時之氙原子或分子之激發而發出光。於此種氙閃光燈FL中,由於預先儲存於電容器中之靜電能量被轉換為0.1毫秒至100毫秒之極短之光脈衝,故而與如鹵素燈HL般連續點亮之光源相比具有能夠照射極強之光之特徵。即,閃光燈FL係於未達1秒之極短時間內瞬間發光之脈衝發光燈。再者,閃光燈FL之發光時間可藉由對閃光燈FL進行電力供給之燈電源之線圈常數來調整。
又,反射器52係以於複數個閃光燈FL之上方覆蓋其等全體之方式設置。反射器52之基本功能係將自複數個閃光燈FL出射之閃光反射至熱處理空間65側。反射器52係由鋁合金板形成,且其表面(面向閃光燈FL側之面)藉由噴砂處理而實施了表面粗糙化加工。
設置於處理腔室6下方之鹵素燈室4中,於殼體41之內側內置有多根(於本實施形態中為40根)鹵素燈HL。複數個鹵素燈HL進行自處理腔室6之下方經由下側腔室窗64向熱處理空間65之光照射。
圖9係表示複數個鹵素燈HL之配置之俯視圖。於本實施形態中,上下2層地配設有每層20根之鹵素燈HL。各鹵素燈HL為具有長條之圓筒形狀之棒狀燈。上層、下層均為,20根鹵素燈HL以各者之長度方向沿著保持部7所保持之半導體晶圓W之主面(即沿水平方向)成為相互平行之方式排列。因此,上層、下層均為,藉由鹵素燈HL之排列而形成之平面為水平面。
又,如圖9所示,上層、下層均為,和與保持部7所保持之半導體晶圓W之中央部對向之區域相比,與周緣部對向之區域中之鹵素燈HL之配設密度更高。即,上層及下層均為,與燈排列之中央部相比,周緣部中之鹵素燈HL之配設間距更短。因此,於利用來自鹵素燈HL之光照射進行之加熱時,能夠對易發生溫度下降之半導體晶圓W之周緣部照射更多之光量。
又,包含上層之鹵素燈HL之燈群與包含下層之鹵素燈HL之燈群以呈格子狀交叉之方式排列。即,以上層之各鹵素燈HL之長度方向與下層之各鹵素燈HL之長度方向正交之方式配設有共計40根鹵素燈HL。
鹵素燈HL係藉由對配設於玻璃管內部之絲極通電而使絲極白熾化從而發光之絲極方式之電源。於玻璃管之內部,封入有於氮氣或氬氣等惰性氣體中導入有微量之鹵族元素(碘、溴等)之氣體。藉由導入鹵族元素,能夠一面抑制絲極之折損,一面將絲極之溫度設定為高溫。因此,鹵素燈HL與通常之白熾燈泡相比,具有壽命較長且能夠連續地照射強光之特性。即,鹵素燈HL係連續發光至少1秒以上之連續點亮燈。又,由於鹵素燈HL為棒狀燈,故而為長壽命,藉由將鹵素燈HL沿水平方向配置而向上方之半導體晶圓W之放射效率變得優異。
又,於鹵素燈室4之殼體41內,亦於兩層鹵素燈HL之下側設置有反射器43(圖3)。反射器43將自複數個鹵素燈HL出射之光反射至熱處理空間65側。
控制部3控制設置於熱處理裝置100之上述各種動作機構。作為控制部3之硬體之構成與通常之電腦相同。即,控制部3具備作為進行各種運算處理之電路之CPU(Central Processing Unit,中央處理單元)、作為記憶基本程式之讀出專用記憶體之ROM(Read Only Memory,唯讀記憶體)、作為記憶各種資訊之自由讀寫之記憶體之RAM(Random Access Memory,隨機存取記憶體)及記憶控制用軟體或資料等之磁碟。藉由控制部3之CPU執行特定之處理程式,而進行熱處理裝置100中之處理。再者,於圖1中,於分度器部101內表示有控制部3,但並非限定於此,控制部3可配置於熱處理裝置100內之任意位置。
除上述構成以外,熱處理部160還具備各種冷卻用構造以防止於半導體晶圓W之熱處理時因自鹵素燈HL及閃光燈FL產生之熱能導致鹵素燈室4、閃光燈室5及處理腔室6之過度之溫度上升。例如,於處理腔室6之壁體設置有水冷管(省略圖示)。又,鹵素燈室4及閃光燈室5被設為於內部形成氣流而排熱之空氣冷卻構造。又,對上側腔室窗63與燈光放射窗53之間隙亦供給空氣,而將閃光燈室5及上側腔室窗63冷卻。
其次,對利用本發明之熱處理裝置100所進行之半導體晶圓W之處理動作進行說明。成為處理對象之半導體晶圓W係藉由離子注入法而添加有雜質(離子)之半導體基板。該雜質之活化係藉由利用熱處理裝置100所進行之閃光照射加熱處理(退火)而執行。於此,對熱處理裝置100中之大致之半導體晶圓W之搬送順序進行說明之後,對熱處理部160中之半導體晶圓W之加熱處理進行說明。
首先,注入有雜質之未處理之半導體晶圓W以於載子C中收容有複數片之狀態被載置於分度器部101之負載埠110。然後,交接機器人120自載子C一片一片地取出未處理之半導體晶圓W,並搬入至對準部230之對準腔室231。於對準腔室231中,藉由使支持於旋轉支持部之半導體晶圓W以其中心部作為旋轉中心於水平面內繞鉛直方向軸旋轉,並對凹口等進行光學檢測,而調整半導體晶圓W之方向。
其次,分度器部101之交接機器人120自對準腔室231取出已調整方向之半導體晶圓W,並搬入至冷卻部130之第1冷卻腔室131或冷卻部140之第2冷卻腔室141。被搬入至第1冷卻腔室131或第2冷卻腔室141之未處理之半導體晶圓W由搬送機器人150搬出至搬送腔室170。當未處理之半導體晶圓W自分度器部101經過第1冷卻腔室131或第2冷卻腔室141被移送至搬送腔室170時,第1冷卻腔室131及第2冷卻腔室141作為用於半導體晶圓W之交接之通路而發揮功能。
已將半導體晶圓W取出之搬送機器人150以朝向熱處理部160之方式回轉。繼而,搬送機器人150將未處理之半導體晶圓W搬入至處理腔室6。此時,於先行之經過加熱處理之半導體晶圓W存在於處理腔室6之情形時,由搬送機器手151a、151b中之一者將加熱處理後之半導體晶圓W取出之後,由另一者將未處理之半導體晶圓W搬入至處理腔室6,而進行晶圓更換。
對被搬入至處理腔室6之半導體晶圓W,利用鹵素燈HL進行預加熱之後,藉由來自閃光燈FL之閃光照射而進行閃光加熱處理。藉由該閃光加熱處理進行雜質之活化。關於熱處理部160中之閃光加熱處理及對於處理腔室6之晶圓更換將於下文詳細敍述。
於閃光加熱處理結束之後,搬送機器人150自處理腔室6將閃光加熱處理後之半導體晶圓W搬出至搬送腔室170。已將半導體晶圓W取出之搬送機器人150以自處理腔室6朝向第1冷卻腔室131或第2冷卻腔室141之方式回轉。
其後,搬送機器人150將加熱處理後之半導體晶圓W搬入至冷卻部130之第1冷卻腔室131或冷卻部140之第2冷卻腔室141。於第1冷卻腔室131或第2冷卻腔室141中,對閃光加熱處理後之半導體晶圓W進行冷卻處理。由於自熱處理部160之處理腔室6搬出之時點之半導體晶圓W整體之溫度為相對高溫,故而將其於第1冷卻腔室131或第2冷卻腔室141中冷卻至常溫左右。於經過特定之冷卻處理時間之後,交接機器人120將冷卻後之半導體晶圓W自第1冷卻腔室131或第2冷卻腔室141搬出,並返還至載子C。若於載子C中收容有特定片數之處理過之半導體晶圓W,則將該載子C自分度器部101之負載埠110搬出。
針對熱處理部160中之閃光加熱處理繼續進行說明。圖10係表示熱處理部160中之半導體晶圓W之表面溫度之變化之圖。於先行之半導體晶圓W之處理結束之後將該半導體晶圓W自處理腔室6搬出,然後閘閥185保持打開之狀態,且搬送開口部66被打開。然後,於時刻t1,成為處理對象之半導體晶圓W由搬送機器人150自搬送開口部66搬入至處理腔室6內之熱處理空間65。
搬送機器人150使保持處理對象之半導體晶圓W之搬送機器手151a(或搬送機器手151b)進入至保持部7之正上方位置為止並使之停止。繼而,藉由移載機構10之一對移載臂11於移載動作位置上升,而頂起銷12通過貫通孔79並自晶座74之保持板75之上表面突出,而自搬送機器手151a接收半導體晶圓W。此時,頂起銷12上升至較基板支持銷77之上端更靠上方。
於半導體晶圓W被頂起銷12頂起並載置之後,搬送機器人150使搬送機器手151a自熱處理空間65退出。然後,於時刻t2開始進行熱處理部160中之半導體晶圓W之處理。具體而言,將用於供氣之閥84打開,並且將排氣用閥89、192打開,而開始進行對於處理腔室6內之供氣及排氣。若將閥84打開,則自氣體供給孔81將氮氣供給至熱處理空間65。又,若將閥89打開,則自氣體排氣孔86排出處理腔室6內之氣體。藉此,自處理腔室6內之熱處理空間65之上部供給之氮氣流向下方,並自熱處理空間65之下部排出。又,藉由將閥192打開,亦自搬送開口部66排出處理腔室6內之氣體。
於開始針對半導體晶圓W之處理之後,於時刻t3閘閥185關閉而搬送開口部66被關閉。即,於半導體晶圓W被搬入至處理腔室6內之後,一面對處理腔室6供給氮氣,一面將閘閥185關閉。又,藉由將閘閥185關閉,並且使一對移載臂11下降,而使半導體晶圓W自移載機構10被交接至保持部7之晶座74並以水平姿勢自下方被保持。半導體晶圓W係由豎立設置於保持板75上之複數個基板支持銷77支持且保持於晶座74。又,半導體晶圓W係以進行圖案形成且注入有雜質之正面作為上表面而保持於保持部7。於由複數個基板支持銷77支持之半導體晶圓W之背面(與正面為相反側之主面)與保持板75之保持面75a之間形成特定之間隔。下降至晶座74下方之一對移載臂11藉由水平移動機構13而以打開之方式水平移動,從而退避至退避位置、即凹部62之內側。
於半導體晶圓W利用保持部7之晶座74而以水平姿勢自下方被保持之後,於時刻t4將40根鹵素燈HL同時點亮而開始預加熱(輔助加熱)。自鹵素燈HL出射之鹵素光透過由石英形成之下側腔室窗64及晶座74而自半導體晶圓W之下表面照射。藉由受到來自鹵素燈HL之光照射,而使半導體晶圓W被預加熱從而溫度上升。再者,由於移載機構10之移載臂11退避至凹部62之內側,故而不會妨礙利用鹵素燈HL所進行之加熱。
於利用鹵素燈HL進行預加熱時,半導體晶圓W之溫度由放射溫度計20進行測定。即,由放射溫度計20接收自保持於晶座74之半導體晶圓W之下表面經由開口部78所放射之紅外光,來測定升溫中之晶圓溫度。測定所得之半導體晶圓W之溫度被傳輸至控制部3。控制部3一面監視藉由來自鹵素燈HL之光照射而升溫之半導體晶圓W之溫度是否到達特定之預加熱溫度T1,一面控制鹵素燈HL之輸出。即,控制部3基於利用放射溫度計20所得之測定值,以半導體晶圓W之溫度成為預加熱溫度T1之方式對鹵素燈HL之輸出進行反饋控制。預加熱溫度T1被設為添加至半導體晶圓W中之雜質無因熱而擴散之可能性之約600℃至800℃(於本實施形態中為700℃)。
於半導體晶圓W之溫度到達至預加熱溫度T1之後,控制部3將半導體晶圓W暫時維持於該預加熱溫度T1。具體而言,於由放射溫度計20測定所得之半導體晶圓W之溫度到達預加熱溫度T1之時點,控制部3調整鹵素燈HL之輸出,將半導體晶圓W之溫度維持於大致預加熱溫度T1。
藉由進行此種利用鹵素燈HL所進行之預加熱,將半導體晶圓W整體均勻地升溫至預加熱溫度T1。於利用鹵素燈HL進行預加熱之階段中,具有更易發生散熱之半導體晶圓W之周緣部之溫度與中央部相比下降之傾向,但關於鹵素燈室4中之鹵素燈HL之配設密度,和與半導體晶圓W之中央部對向之區域相比,與周緣部對向之區域更高。因此,照射至易發生散熱之半導體晶圓W之周緣部之光量變多,能夠使預加熱階段中之半導體晶圓W之面內溫度分佈變得均勻。
於半導體晶圓W之溫度到達預加熱溫度T1之後經過特定時間之時刻t5,閃光燈FL對半導體晶圓W之表面進行閃光照射。此時,自閃光燈FL放射之閃光之一部分直接前往處理腔室6內,另一部分一旦被反射器52反射之後便射入處理腔室6內,藉由該等閃光之照射而進行半導體晶圓W之閃光加熱。
閃光加熱係藉由來自閃光燈FL之閃光(閃爍光)照射而進行,因此能夠使半導體晶圓W之表面溫度於短時間內上升。即,自閃光燈FL照射之閃光係預先儲存於電容器中之靜電能量被轉換為極短之光脈衝、且照射時間為約0.1毫秒以上且100毫秒以下之極短之強閃爍光。而且,藉由來自閃光燈FL之閃光照射而被閃光加熱之半導體晶圓W之表面溫度瞬間上升至1000℃以上之處理溫度T2,且於注入至半導體晶圓W之雜質被活化之後,表面溫度急速地下降。如此,藉由閃光加熱能夠將半導體晶圓W之表面溫度於極短時間內升降,因此能夠一面抑制注入至半導體晶圓W之雜質因熱而擴散,一面進行雜質之活化。再者,由於雜質之活化所需要之時間與其熱擴散所需要之時間相比極短,故而即便為約0.1毫秒至100毫秒之不會發生擴散之短時間,亦會完成活化。
於閃光加熱處理結束之後,鹵素燈HL亦熄滅。藉由使閃光燈FL及鹵素燈HL之兩者熄滅,而使半導體晶圓W之溫度急速地降溫。降溫中之半導體晶圓W之溫度係由放射溫度計20進行測定,且其測定結果被傳輸至控制部3。閃光加熱處理剛結束後之半導體晶圓W為相當高之溫度,若將該高溫之半導體晶圓W立即自處理腔室6搬出,則會有半導體晶圓W氧化、或對搬送機器人150造成熱損傷之可能性。因此,於閃光加熱處理結束之後,於處理腔室6內待機至半導體晶圓W降溫至可搬出溫度T3以下為止,然後將半導體晶圓W自處理腔室6搬出至搬送腔室170。所謂可搬出溫度T3係即便將熱處理後之半導體晶圓W自處理腔室6搬出至搬送腔室170亦不會產生氧化等問題之溫度、即能夠將半導體晶圓W自處理腔室6搬出之溫度。可搬出溫度T3例如為350℃。
於閃光燈FL及鹵素燈HL之熄滅後,半導體晶圓W於處理腔室6內於時刻t7降溫至可搬出溫度T3。於本實施形態中,於半導體晶圓W降溫至可搬出溫度T3之時刻t7之前之時刻t6,開始進行用以將半導體晶圓W自處理腔室6搬出之搬出準備動作。具體而言,於時刻t6,移載機構10之一對移載臂11自退避位置水平移動至移載動作位置。然後,移動至移載動作位置之一對移載臂11上升,而頂起銷12通過貫通孔79且突出至較晶座74之保持板75之上表面更靠上方。藉此,保持於晶座74之半導體晶圓W被頂起銷12頂起並接收。
又,於時刻t6,移載臂11接收半導體晶圓W,並且閘閥185打開而使搬送開口部66打開。若搬送開口部66被打開,則有搬送腔室170內之氣體混入至處理腔室6之可能性,但由於對處理腔室6持續供給氮氣,故而能夠抑制此種氣體混入。又,即便搬送腔室170內之少許氣體混入至處理腔室6,由於搬送腔室170內亦被設為潔淨之氮氣氛圍,故而能夠將處理腔室6內之氧濃度上升抑制於最小限度,而防止半導體晶圓W之氧化。但是,若於剛進行閃光加熱處理後之半導體晶圓W為高溫時將搬送開口部66打開,則即便是處理腔室6內之略微之氧濃度上升亦有半導體晶圓W被氧化之顧慮,因此打開閘閥185之時刻t6較佳為設為半導體晶圓W降溫至不存在會因向處理腔室6之氣體混入引起半導體晶圓W氧化之顧慮之開口部可打開溫度(例如,500℃)以下之時點。
於在腔室6內由頂起銷12支持之半導體晶圓W降溫至可搬出溫度T3之時刻t7,搬送機器人150使空的搬送機器手151b(或搬送機器手151a)自搬送開口部66進入,且進入至由頂起銷12支持之半導體晶圓W之正下方位置為止並使之停止。然後,藉由使一對移載臂11下降,而使加熱處理後之半導體晶圓W自頂起銷12被交付並載置於搬送機器手151b。繼而,搬送機器人150使搬送機器手151b自處理腔室6退出而將處理後之半導體晶圓W搬出。
另一方面,下降而將頂起銷12自貫通孔79拔出之一對移載臂11不自移載動作位置返回至退避位置,而是留在移載動作位置。即,於處理後之半導體晶圓W自處理腔室6被搬出之後,一對移載臂11亦不返回至退避位置,而是於移載動作位置待機。
又,於已接收處理後之半導體晶圓W之搬送機器手151b自搬送開口部66退出之後,至返回至搬送腔室170內之原始位置並停止為止之期間內,由晶圓感測器155判定搬送機器手151b上是否保持有半導體晶圓W。即,晶圓感測器155於自搬送機器手151b接收半導體晶圓W並自搬送開口部66退出之時點起至返回至原始位置並停止為止之移動期間內,確認搬送機器手151b上是否保持有半導體晶圓W。
然後,於熱處理部160中,重複與上述相同之順序。即,搬送機器人150使保持成為新的處理對象之半導體晶圓W之搬送機器手151a自搬送開口部66進入至處理腔室6內,且不返回至退避位置而是於移載動作位置待機之一對移載臂11上升而接收該半導體晶圓W。然後,於搬送機器人150使搬送機器手151a自處理腔室6退出之後,開始進行對於新的半導體晶圓W之處理。
圖11係概念性地表示熱處理部160中之半導體晶圓W之搬入搬出動作之時序圖。該圖所示之時刻與圖10對應。於本實施形態中,對於1片半導體晶圓W之處理於圖10之時刻t2開始並於時刻t7完成。因此,時刻t2至時刻t7係半導體晶圓W之處理階段。再者,於圖11中,表示先行之半導體晶圓W之處理階段及後續之半導體晶圓W之處理階段。
又,於圖10之時刻t6,開始進行處理過之半導體晶圓W之搬出動作,於時刻t3,新的半導體晶圓W之搬入動作完成。因此,可謂時刻t6至時刻t3係半導體晶圓W之搬入搬出階段。而且,於本實施形態中,如圖11所示,於處理階段完成之前,開始搬入搬出階段。具體而言,於半導體晶圓W降溫至可搬出溫度T3之時刻t7之前之時刻t6,開始進行用以將半導體晶圓W自處理腔室6搬出之搬出準備動作。於搬出準備動作中,包含閘閥185之打開及移載臂11之驅動。先前係於半導體晶圓W降溫至可搬出溫度T3之後進行搬出準備動作,但於本發明中係於半導體晶圓W降溫至可搬出溫度T3之前開始進行搬出準備動作,故而能夠縮短半導體晶圓W自處理腔室6搬出所需要之時間。
又,如圖11所示,於開始處理階段之後,搬入搬出階段結束。具體而言,於對於半導體晶圓W之處理開始之時刻t2之後之時刻t3,閘閥185關閉而將半導體晶圓W搬入至處理腔室6之動作完成。先前係於半導體晶圓W之搬入動作完成之後開始半導體晶圓W之處理,但於本發明中係於半導體晶圓W之搬入動作完成之前開始進行對於半導體晶圓W之處理,故而能夠縮短半導體晶圓W向處理腔室6搬入所需要之時間。
總之,藉由使半導體晶圓W之處理階段與搬入搬出階段重疊,能夠縮短半導體晶圓W相對於處理腔室6之搬入搬出所需要之時間。其結果,能夠使熱處理裝置100中之處理量提高。
又,於本實施形態中,於處理後之半導體晶圓W自處理腔室6被搬出之後,一對移載臂11亦不返回至退避位置,而是於移載動作位置待機。因此,於處理後之半導體晶圓W之搬出之後移載臂11自移載動作位置返回至退避位置所需要之時間、及於新的半導體晶圓W之搬入時移載臂11自退避位置移動至移載動作位置所需要之時間變得不需要。其結果,能夠縮短半導體晶圓W相對於處理腔室6之搬入搬出所需要之時間。
進而,於本實施形態中,於自搬送機器人150之搬送機器手151b接收半導體晶圓W並自搬送開口部66退出之時點起至停止為止之移動期間內,判定搬送機器手151b上是否保持有半導體晶圓W。先前係於搬送機器手151b返回至原始位置並停止之後確認半導體晶圓W之有無,但藉由如本實施形態般於搬送機器手151b停止之前之移動期間內判定半導體晶圓W之有無,能夠縮短判定有無半導體晶圓W所需要之時間。
以上,對本發明之實施形態進行了說明,但該發明只要不脫離其主旨則除了上述內容以外還能進行各種變更。例如,於上述實施形態中係於搬送機器手151b之移動期間內判定半導體晶圓W之有無,但除此以外,亦可設為於搬送機器手151b返回至原始位置並停止時亦確認半導體晶圓W之有無。又,除了半導體晶圓W之有無之判定以外,亦可設為檢測搬送機器手151b中之半導體晶圓W之位置偏移之偏移量。
又,於上述實施形態中,設為閃光燈室5中具備30根閃光燈FL,但並非限定於此,可將閃光燈FL之根數設為任意數量。又,閃光燈FL並非限定於氙閃光燈,亦可為氪閃光燈。又,鹵素燈室4所具備之鹵素燈HL之根數亦並非限定於40根,可設為任意數量。
又,於上述實施形態中,使用絲極方式之鹵素燈HL作為連續發光1秒以上之連續點亮燈來進行半導體晶圓W之預加熱,但並非限定於此,亦可設為代替鹵素燈HL,而使用放電型弧光燈(例如,氙弧光燈)作為連續點亮燈來進行預加熱。
又,藉由熱處理裝置100而成為處理對象之基板並非限定於半導體晶圓,亦可為液晶顯示裝置等平板顯示器中使用之玻璃基板或太陽電池用基板。又,本發明之技術亦可應用於高介電常數閘極絕緣膜(High-k膜)之熱處理、金屬與矽之接合、或多晶矽之結晶化。
3‧‧‧控制部
4‧‧‧鹵素燈室
5‧‧‧閃光燈室
6‧‧‧處理腔室
7‧‧‧保持部
10‧‧‧移載機構
11‧‧‧移載臂
12‧‧‧頂起銷
13‧‧‧水平移動機構
14‧‧‧升降機構
20‧‧‧放射溫度計
41‧‧‧殼體
43‧‧‧反射器
51‧‧‧殼體
52‧‧‧反射器
53‧‧‧燈光放射窗
61‧‧‧腔室側部
62‧‧‧凹部
63‧‧‧上側腔室窗
64‧‧‧下側腔室窗
65‧‧‧熱處理空間
66‧‧‧搬送開口部
68‧‧‧反射環
69‧‧‧反射環
71‧‧‧基台環
72‧‧‧連結部
74‧‧‧晶座
75‧‧‧保持板
75a‧‧‧保持面
76‧‧‧導引環
77‧‧‧基板支持銷
78‧‧‧開口部
79‧‧‧貫通孔
81‧‧‧氣體供給孔
82‧‧‧緩衝空間
83‧‧‧氣體供給管
84‧‧‧閥
85‧‧‧處理氣體供給源
86‧‧‧氣體排氣孔
87‧‧‧緩衝空間
88‧‧‧氣體排氣管
89‧‧‧閥
100‧‧‧熱處理裝置
101‧‧‧分度器部
110‧‧‧負載埠
120‧‧‧交接機器人
120R‧‧‧箭頭
120S‧‧‧箭頭
121‧‧‧機器手
130‧‧‧冷卻部
131‧‧‧第1冷卻腔室
140‧‧‧冷卻部
141‧‧‧第2冷卻腔室
150‧‧‧搬送機器人
150R‧‧‧箭頭
151a‧‧‧搬送機器手
151b‧‧‧搬送機器手
155‧‧‧晶圓感測器
160‧‧‧熱處理部
170‧‧‧搬送腔室
181‧‧‧閘閥
182‧‧‧閘閥
183‧‧‧閘閥
184‧‧‧閘閥
185‧‧‧閘閥
190‧‧‧排氣機構
191‧‧‧氣體排氣管
192‧‧‧閥
230‧‧‧對準部
231‧‧‧對準腔室
C‧‧‧載子
CU‧‧‧箭頭
FL‧‧‧閃光燈
HL‧‧‧鹵素燈
T1‧‧‧預加熱溫度
T2‧‧‧處理溫度
T3‧‧‧可搬出溫度
t1‧‧‧時刻
t2‧‧‧時刻
t3‧‧‧時刻
t4‧‧‧時刻
t5‧‧‧時刻
t6‧‧‧時刻
t7‧‧‧時刻
W‧‧‧半導體晶圓
X‧‧‧軸
Y‧‧‧軸
Z‧‧‧軸
圖1係表示本發明之熱處理方法中使用之熱處理裝置之俯視圖。
圖2係圖1之熱處理裝置之前視圖。
圖3係表示熱處理部之構成之縱剖視圖。
圖4係表示保持部之整體外觀之立體圖。
圖5係晶座之俯視圖。
圖6係晶座之剖視圖。
圖7係移載機構之俯視圖。
圖8係移載機構之側視圖。
圖9係表示複數個鹵素燈之配置之俯視圖。
圖10係表示熱處理部中之半導體晶圓之表面溫度之變化的圖。
圖11係概念性地表示熱處理部中之半導體晶圓之搬入搬出動作之時序圖。
T1‧‧‧預加熱溫度
T2‧‧‧處理溫度
T3‧‧‧可搬出溫度
t1‧‧‧時刻
t2‧‧‧時刻
t3‧‧‧時刻
t4‧‧‧時刻
t5‧‧‧時刻
t6‧‧‧時刻
t7‧‧‧時刻
Claims (3)
- 一種熱處理方法,其特徵在於:其係藉由對基板照射光而將該基板加熱之熱處理方法,且具備:加熱步驟,其係對在腔室內保持於晶座之第1基板自燈照射光而將該第1基板加熱;及冷卻步驟,其係將上述燈熄滅且將上述第1基板冷卻至能夠自上述腔室搬出之可搬出溫度;且將上述第1基板降溫至上述第1基板不氧化之溫度以下,且於上述第1基板降溫至上述可搬出溫度之前,開始進行用以將上述第1基板自上述腔室搬出之搬出準備動作,其中上述搬出準備動作包括以下步驟:將設置於用以將基板相對於上述腔室搬入搬出之搬送開口部之閘閥打開;及使相對於上述晶座進行基板之移載之移載臂自較上述晶座更靠外側之退避位置移動至上述晶座之下方之移載動作位置,並且使上述移載臂上升而使豎立設置於上述移載臂之頂起銷突出至較上述晶座更靠上方,從而接收上述第1基板;上述處理方法進而具備如下搬出步驟,即,設置於上述腔室外部之搬送機器人之搬送機器手自上述頂起銷接收已降溫至上述可搬出溫度之上述第1基板,並將其自上述腔室搬出,且於上述第1基板自上述腔室被搬出之後,上述移載臂仍不返回至上述退避位置,而是於上述移載動作位置待機; 於上述搬送機器手接收上述第1基板並自上述搬送開口部退出之後至停止為止之移動期間內,判定上述搬送機器手上是否保持有上述第1基板。
- 如請求項1之熱處理方法,其進而具備如下搬入步驟,即,於上述第1基板自上述腔室被搬出之後,上述搬送機器人之上述搬送機器手將第2基板自上述搬送開口部搬入至上述腔室內,且於上述第2基板被搬入至上述腔室內並開始進行對於上述第2基板之處理之後,將上述閘閥關閉。
- 如請求項2之熱處理方法,其中上述第2基板被搬入至上述腔室內之後,一面對上述腔室供給處理氣體,一面將上述閘閥關閉。
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