TWI754913B - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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TWI754913B
TWI754913B TW109111116A TW109111116A TWI754913B TW I754913 B TWI754913 B TW I754913B TW 109111116 A TW109111116 A TW 109111116A TW 109111116 A TW109111116 A TW 109111116A TW I754913 B TWI754913 B TW I754913B
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chamber
substrate
processing apparatus
substrate processing
gas
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TW109111116A
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TW202044397A (en
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西原一樹
鰍場真樹
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日商斯庫林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

本發明提供一種可提高基板之面內蝕刻之均一性之基板處理裝置。 基板處理裝置1係以氣相蝕刻基板W1之表面之裝置。基板處理裝置1具備腔室10、加熱載置部30、氣體導入部40、排氣部50、及第1加熱部60。加熱載置部30於腔室10內，加熱並載置基板W1。氣體導入部40具有於腔室10內設置於與基板W1對向之位置之導入口41a，自導入口41a向腔室10內導入蝕刻氣體。排氣部50經由形成於腔室10之第1排氣口12a排出腔室10內之氣體。第1加熱部60安裝於腔室10。The present invention provides a substrate processing apparatus capable of improving the uniformity of in-plane etching of a substrate. The substrate processing apparatus 1 is an apparatus for etching the surface of the substrate W1 by vapor phase. The substrate processing apparatus 1 includes a chamber 10 , a heating mounting unit 30 , a gas introduction unit 40 , an exhaust unit 50 , and a first heating unit 60 . The heating mounting part 30 heats and mounts the substrate W1 in the chamber 10 . The gas introduction part 40 has an introduction port 41 a provided in the chamber 10 at a position facing the substrate W1 , and an etching gas is introduced into the chamber 10 from the introduction port 41 a . The exhaust part 50 exhausts the gas in the chamber 10 through the first exhaust port 12 a formed in the chamber 10 . The first heating unit 60 is attached to the chamber 10 .

Description

基板處理裝置Substrate processing equipment

本申請案係關於一種基板處理裝置。The present application relates to a substrate processing apparatus.

先前以來，作為蝕刻基板之蝕刻裝置，揭示有將藥液供給至基板之裝置。若蝕刻裝置將藥液供給至基板，則藥液可作用於基板而對蝕刻對象膜進行蝕刻。然而，若基板之圖案微細化，則藥液無法充分地進入其狹窄區域。其結果，存在蝕刻不充分之問題。Conventionally, as an etching apparatus for etching a substrate, an apparatus for supplying a chemical solution to a substrate has been disclosed. When the etching apparatus supplies the chemical solution to the substrate, the chemical solution acts on the substrate to etch the film to be etched. However, when the pattern of the substrate is made finer, the chemical liquid cannot sufficiently enter the narrow area. As a result, there is a problem of insufficient etching.

因此，揭示有不使用藥液之氣相蝕刻裝置(例如專利文獻1)。該氣相蝕刻裝置使用處理氣體對基板進行蝕刻。氣相蝕刻裝置包括腔室、及氣體輸送裝置。於腔室內載置成為蝕刻對象之基板。氣體輸送裝置自腔室內之上側向基板供給處理氣體。處理氣體作用於基板，對基板進行蝕刻。由於處理氣體為氣體，故可進入基板之狹窄區域。Therefore, a vapor-phase etching apparatus that does not use a chemical solution has been disclosed (for example, Patent Document 1). This vapor-phase etching apparatus etches a substrate using a process gas. The gas phase etching apparatus includes a chamber, and a gas delivery apparatus. The substrate to be etched is placed in the chamber. The gas delivery device supplies the processing gas to the substrate from the upper side in the chamber. The process gas acts on the substrate to etch the substrate. Since the process gas is a gas, it can enter narrow areas of the substrate.

又，於該氣相蝕刻裝置中，由於未利用電漿，因此可降低製造成本。 [先前技術文獻] [專利文獻]Moreover, in this vapor-phase etching apparatus, since plasma is not used, manufacturing cost can be reduced. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特開2014-45125號公報[Patent Document 1] Japanese Patent Laid-Open No. 2014-45125

(發明所欲解決之問題)(The problem that the invention intends to solve)

於專利文獻1之氣相蝕刻裝置中，考慮對基板進行加熱。藉此，可促進利用處理氣體(以下，稱為蝕刻氣體)所進行之基板之蝕刻。In the vapor phase etching apparatus of patent document 1, it is considered to heat a board|substrate. Thereby, the etching of the board|substrate by a process gas (henceforth an etching gas) can be accelerated|stimulated.

然而，由於對基板進行加熱，故基板之溫度高於腔室之內周面之溫度。氣體因對流而容易流向溫度較低處，因此，基板之周緣部附近之氣體容易流向腔室之內周面。藉此，基板之周緣部其蝕刻量減少。即，基板之面內蝕刻之均一性降低。However, since the substrate is heated, the temperature of the substrate is higher than the temperature of the inner peripheral surface of the chamber. The gas tends to flow to the lower temperature place due to convection, and therefore, the gas in the vicinity of the peripheral edge of the substrate tends to flow to the inner peripheral surface of the chamber. Thereby, the etching amount of the peripheral edge part of a board|substrate is reduced. That is, the uniformity of the in-plane etching of the substrate decreases.

因此，本申請案之目的在於提供一種可提高基板之面內蝕刻之均一性之基板處理裝置。 (解決問題之技術手段)Therefore, an object of the present application is to provide a substrate processing apparatus that can improve the uniformity of in-plane etching of a substrate. (Technical means to solve problems)

基板處理裝置之第1態樣係一種以氣相蝕刻基板之表面之基板處理裝置，其具備：腔室；加熱載置部，其於上述腔室內加熱並載置上述基板；氣體導入部，其具有於上述腔室內設置於與上述基板對向之位置之導入口，自上述導入口向上述腔室內導入蝕刻氣體；排氣部，其經由形成於上述腔室之第1排氣口將上述腔室內之氣體向外部排出；及第1加熱部，其安裝於上述腔室。A first aspect of the substrate processing apparatus is a substrate processing apparatus for etching the surface of a substrate by vapor phase, comprising: a chamber; a heating placing part that heats and places the substrate in the chamber; and a gas introducing part that an introduction port provided in the chamber at a position opposite to the substrate, and an etching gas is introduced into the chamber from the introduction port; an exhaust part for expelling the chamber through a first exhaust port formed in the chamber The gas in the room is discharged to the outside; and the first heating part is installed in the above-mentioned chamber.

基板處理裝置之第2態樣係如第1態樣之基板處理裝置，其中上述第1加熱部係使上述腔室之內周面之溫度升溫至上述基板之表面之溫度以上。A second aspect of the substrate processing apparatus is the substrate processing apparatus according to the first aspect, wherein the first heating unit raises the temperature of the inner peripheral surface of the chamber to a temperature equal to or higher than the temperature of the surface of the substrate.

基板處理裝置之第3態樣係如第2態樣之基板處理裝置，其中上述第1加熱部係對上述腔室進行加熱，使上述腔室之內周面之溫度升溫至較上述基板之表面之溫度高30度以上之值。A third aspect of the substrate processing apparatus is the substrate processing apparatus according to the second aspect, wherein the first heating section heats the chamber to raise the temperature of the inner peripheral surface of the chamber to a higher temperature than the surface of the substrate The temperature is higher than 30 degrees.

基板處理裝置之第4態樣係如第1至第3中任一態樣之基板處理裝置，其中上述加熱載置部係使上述基板之溫度升溫至50度以上且200度以下，上述第1加熱部係使上述腔室之內周面之溫度升溫至80度以上且230度以下。A fourth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to third aspects, wherein the heating and placing section raises the temperature of the substrate to 50 degrees or more and 200 degrees or less, and the first The heating part raises the temperature of the inner peripheral surface of the said chamber to 80 degrees or more and 230 degrees or less.

基板處理裝置之第5態樣係如第1至第4中任一態樣之基板處理裝置，其中上述第1加熱部係安裝於上述腔室之側壁中至少於水平方向上與上述基板對向之區域。A fifth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the first heating part is installed in the side wall of the chamber to face the substrate at least in a horizontal direction area.

基板處理裝置之第6態樣係如第1至第5中任一態樣之基板處理裝置，其進而具備：外腔室，其包圍上述腔室；及第2加熱部，其安裝於上述外腔室；且上述腔室之上述第1排氣口係將上述腔室之內部空間、及上述腔室與上述外腔室之間之外側空間相互連接，於上述外腔室形成第2排氣口，上述排氣部係經由上述第2排氣口將上述外腔室內之氣體向外部排出。A sixth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to fifth aspects, further comprising: an outer chamber surrounding the chamber; and a second heating portion attached to the outer chamber a chamber; and the first exhaust port of the chamber connects the inner space of the chamber and the outer space between the chamber and the outer chamber to each other, and forms a second exhaust in the outer chamber The exhaust part exhausts the gas in the outer chamber to the outside through the second exhaust port.

基板處理裝置之第7態樣係如第6態樣之基板處理裝置，其中上述第2加熱部係使上述外腔室之內周面之溫度升溫至上述腔室之內周面之溫度以上。A seventh aspect of the substrate processing apparatus is the substrate processing apparatus according to the sixth aspect, wherein the second heating unit raises the temperature of the inner peripheral surface of the outer chamber to a temperature equal to or higher than the temperature of the inner peripheral surface of the chamber.

基板處理裝置之第8態樣係如第6或第7態樣之基板處理裝置，其中上述第2加熱部係使上述外腔室之內周面之溫度升溫至100度以上。An eighth aspect of the substrate processing apparatus is the substrate processing apparatus according to the sixth or seventh aspect, wherein the second heating unit increases the temperature of the inner peripheral surface of the outer chamber to 100 degrees or more.

基板處理裝置之第9態樣係如第6至第8中任一態樣之基板處理裝置，其具備：第1壓力感測器，其設置於上述腔室內；第2壓力感測器，其設置於上述腔室與上述外腔室之間；及控制部，其基於上述第1壓力感測器及上述第2壓力感測器之測定值，控制上述排氣部之排氣流量。A ninth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the sixth to eighth aspects, comprising: a first pressure sensor disposed in the chamber; and a second pressure sensor provided between the chamber and the outer chamber; and a control unit for controlling the exhaust flow rate of the exhaust unit based on the measured values of the first pressure sensor and the second pressure sensor.

基板處理裝置之第10態樣係如第1至第9中任一態樣之基板處理裝置，其進而具備整流部，該整流部設置於上述導入口與上述基板之間，對自上述導入口導入之上述蝕刻氣體進行整流。A tenth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to ninth aspects, further comprising a rectifying portion provided between the introduction port and the substrate, and facing the introduction port from the introduction port. The introduced etching gas is rectified.

基板處理裝置之第11態樣係如第1至第10中任一態樣之基板處理裝置，其中上述第1排氣口設置有數個，該數個第1排氣口係於上述基板之圓周方向上大致等間隔地形成。 (對照先前技術之功效)An eleventh aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to tenth aspects, wherein a plurality of the first exhaust ports are provided, and the plurality of first exhaust ports are located on the circumference of the substrate They are formed at approximately equal intervals in the direction. (Compared to the efficacy of the prior art)

根據基板處理裝置之第1態樣，由於第1加熱部可加熱腔室，故可提高腔室之內周面之溫度。因此，可抑制蝕刻氣體因對流而流向腔室之內周面。藉此，可更均一地對基板供給蝕刻氣體，從而可提高基板之面內蝕刻之均一性。According to the first aspect of the substrate processing apparatus, since the first heating portion can heat the chamber, the temperature of the inner peripheral surface of the chamber can be increased. Therefore, the flow of the etching gas to the inner peripheral surface of the chamber due to convection can be suppressed. Thereby, the etching gas can be supplied to the substrate more uniformly, and the uniformity of the in-plane etching of the substrate can be improved.

根據基板處理裝置之第2態樣，可進而抑制蝕刻氣體因對流而流向腔室之內周面。According to the second aspect of the substrate processing apparatus, the flow of the etching gas to the inner peripheral surface of the chamber due to convection can be further suppressed.

根據基板處理裝置之第3及第4態樣，由於蝕刻氣體容易流向基板，故可增大作用於基板之蝕刻氣體。因此，可提高產能。According to the third and fourth aspects of the substrate processing apparatus, since the etching gas easily flows to the substrate, the etching gas acting on the substrate can be increased. Therefore, the productivity can be improved.

根據基板處理裝置之第5態樣，可有效率地對內腔室中與基板於水平方向上對向之區域進行加熱。因此，可有效率地使因對流引起之蝕刻氣體向側壁22之內周面之流動變化為向基板W1側流動。According to the fifth aspect of the substrate processing apparatus, the region of the inner chamber facing the substrate in the horizontal direction can be efficiently heated. Therefore, the flow of the etching gas to the inner peripheral surface of the side wall 22 due to convection can be efficiently changed to flow toward the substrate W1 side.

根據基板處理裝置之第6態樣，可降低蝕刻氣體於外腔室之內周面液化之可能性。According to the sixth aspect of the substrate processing apparatus, the possibility of liquefaction of the etching gas on the inner peripheral surface of the outer chamber can be reduced.

根據基板處理裝置之第7態樣，可進而抑制蝕刻氣體之液化。According to the seventh aspect of the substrate processing apparatus, the liquefaction of the etching gas can be further suppressed.

根據基板處理裝置之第8態樣，可更確實地抑制蝕刻氣體之液化。According to the eighth aspect of the substrate processing apparatus, the liquefaction of the etching gas can be suppressed more reliably.

根據基板處理裝置之第9態樣，可精度良好地控制腔室內之壓力及外腔室內之壓力。According to the ninth aspect of the substrate processing apparatus, the pressure in the chamber and the pressure in the outer chamber can be precisely controlled.

根據基板處理裝置之第10態樣，由於對蝕刻氣體進行整流，故可進而提高基板之面內蝕刻之均一性。According to the tenth aspect of the substrate processing apparatus, since the etching gas is rectified, the uniformity of the in-plane etching of the substrate can be further improved.

根據基板處理裝置之第11態樣，可使腔室內之氣體之流動更均一。According to the eleventh aspect of the substrate processing apparatus, the flow of the gas in the chamber can be made more uniform.

與本申請案說明書中揭示之技術相關之目的、特徵、態樣、優點，藉由以下所示之詳細說明及隨附圖式而更清楚。Objects, features, aspects, and advantages related to the technology disclosed in the specification of the present application will become clearer from the detailed description shown below and the accompanying drawings.

以下，參照圖式對實施形態進行說明。於圖式中，對具有相同之構成及功能之部分標附相同之符號，於下述說明中，省略重複說明。再者，以下實施形態為一例，並非為限定技術範圍之事例。又，於圖式中，為了容易理解，存在將各部分之尺寸及數量誇張或簡略化進行圖示之情形。Hereinafter, embodiments will be described with reference to the drawings. In the drawings, the parts having the same structure and function are denoted by the same symbols, and in the following description, the repeated description is omitted. In addition, the following embodiment is an example, and is not an example which limits a technical scope. In addition, in the drawings, in order to facilitate understanding, the size and number of each part may be exaggerated or simplified in some cases.

第1實施形態. ＜基板處理裝置之構成＞ 圖1係概略性地表示基板處理裝置1之構成之一例之圖。該基板處理裝置1係以氣相對基板W1之表面進行蝕刻處理之氣相蝕刻裝置。基板處理裝置1不利用電漿對基板W1進行蝕刻處理，故可避免因電漿引起之基板W1之損壞。又，由於不需要產生電漿之機構，故可降低基板處理裝置1之製造成本。1st embodiment. <Configuration of substrate processing apparatus> FIG. 1 is a diagram schematically showing an example of the configuration of a substrate processing apparatus 1 . The substrate processing apparatus 1 is a gas-phase etching apparatus for performing etching processing on the surface of the substrate W1 with gas. The substrate processing apparatus 1 does not use plasma to etch the substrate W1, so that damage to the substrate W1 caused by plasma can be avoided. In addition, since a mechanism for generating plasma is not required, the manufacturing cost of the substrate processing apparatus 1 can be reduced.

如圖1所例示，基板處理裝置1包括內腔室(腔室)10、外腔室20、加熱載置部30、氣體導入部40、排氣部50、加熱部60、及控制部70。As illustrated in FIG. 1 , the substrate processing apparatus 1 includes an inner chamber (chamber) 10 , an outer chamber 20 , a heating mounting unit 30 , a gas introduction unit 40 , an exhaust unit 50 , a heating unit 60 , and a control unit 70 .

內腔室10係形成處理空間V1之密閉殼體。內腔室10例如由金屬形成。如圖1所例示，內腔室10具有上板11、側壁12、及下板13。上板11及下板13於鉛直方向上隔開間隔地相互對向。側壁12連結上板11之周緣及下板13之周緣。側壁12例如呈大致圓筒形狀。於此情形時，上板11及下板13於俯視下(即，沿鉛直方向觀察)呈大致圓形。由上板11、側壁12及下板13包圍之內腔室10之內部空間相當於處理空間V1。The inner chamber 10 forms a closed casing of the processing space V1. The inner chamber 10 is formed of metal, for example. As illustrated in FIG. 1 , the inner chamber 10 has an upper plate 11 , a side wall 12 , and a lower plate 13 . The upper plate 11 and the lower plate 13 face each other at intervals in the vertical direction. The side wall 12 connects the peripheral edge of the upper plate 11 and the peripheral edge of the lower plate 13 . The side wall 12 has a substantially cylindrical shape, for example. In this case, the upper plate 11 and the lower plate 13 are substantially circular in plan view (ie, viewed in the vertical direction). The inner space of the inner chamber 10 surrounded by the upper plate 11 , the side walls 12 and the lower plate 13 corresponds to the processing space V1 .

外腔室20係包圍內腔室10之外側之密閉殼體。外腔室20例如由金屬形成。如圖1所例示，外腔室20具有上板21、側壁22、及下板23。下板23呈環狀之形狀，其內周緣連結於內腔室10之下板13之外周緣。下板13及下板23亦可形成為一體。外腔室20之上板21位於較內腔室10之上板11更上側，隔開間隔地與上板11對向。外腔室20之上板21於俯視下向較內腔室10之上板11之周緣更外側擴展。The outer chamber 20 is a closed casing surrounding the outer side of the inner chamber 10 . The outer chamber 20 is formed of metal, for example. As illustrated in FIG. 1 , the outer chamber 20 has an upper plate 21 , a side wall 22 , and a lower plate 23 . The lower plate 23 has an annular shape, and its inner peripheral edge is connected to the outer peripheral edge of the lower plate 13 of the inner chamber 10 . The lower plate 13 and the lower plate 23 can also be formed as one body. The upper plate 21 of the outer chamber 20 is positioned above the upper plate 11 of the inner chamber 10 and faces the upper plate 11 at intervals. The upper plate 21 of the outer chamber 20 expands more outward than the periphery of the upper plate 11 of the inner chamber 10 in a plan view.

外腔室20之側壁22將上板21之周緣與下板23之外周緣連結，自外側包圍內腔室10之側壁12。外腔室20之側壁22例如呈與內腔室10之側壁12同心之大致圓筒形狀。於此情形時，於俯視下，外腔室20之上板21呈與內腔室10之上板11同心之大致圓形，外腔室20之下板23呈與內腔室10之下板13同心之大致圓環形狀。The side wall 22 of the outer chamber 20 connects the peripheral edge of the upper plate 21 and the outer peripheral edge of the lower plate 23 , and surrounds the side wall 12 of the inner chamber 10 from the outside. The side wall 22 of the outer chamber 20 has, for example, a substantially cylindrical shape concentric with the side wall 12 of the inner chamber 10 . In this case, when viewed from above, the upper plate 21 of the outer chamber 20 is substantially circular and concentric with the upper plate 11 of the inner chamber 10 , and the lower plate 23 of the outer chamber 20 is formed with the lower plate of the inner chamber 10 . 13 Concentric roughly annular shape.

如上所述，於圖1之例中，基板處理裝置1具有包括內腔室10及外腔室20之雙層構造。以下，亦將由內腔室10及外腔室20夾隔之空間稱為外側空間V2。As described above, in the example of FIG. 1 , the substrate processing apparatus 1 has a two-layer structure including the inner chamber 10 and the outer chamber 20 . Hereinafter, the space sandwiched between the inner chamber 10 and the outer chamber 20 is also referred to as the outer space V2.

於內腔室10形成內排氣口12a。於圖1之例中，內排氣口12a形成於內腔室10之側壁12。內排氣口12a沿側壁12之厚度方向貫通側壁12，將內腔室10內之處理空間V1、及內腔室10與外腔室20之間之外側空間V2相互連接。於圖1之例中，內排氣口12a形成於側壁12之下部。處理空間V1內之氣體經由內排氣口12a向外側空間V2排出。An inner exhaust port 12 a is formed in the inner chamber 10 . In the example of FIG. 1 , the inner exhaust port 12 a is formed on the side wall 12 of the inner chamber 10 . The inner exhaust port 12 a penetrates the side wall 12 along the thickness direction of the side wall 12 , and connects the processing space V1 in the inner chamber 10 and the outer space V2 between the inner chamber 10 and the outer chamber 20 to each other. In the example of FIG. 1 , the inner exhaust port 12 a is formed in the lower part of the side wall 12 . The gas in the processing space V1 is discharged to the outer space V2 through the inner exhaust port 12a.

內排氣口12a亦可設置數個。圖2係概略性地表示內腔室10之構成之一例之圖。於圖2中，表示內腔室10之水平剖面圖。於圖2之例中，於內腔室10形成4個內排氣口12a。4個內排氣口12a沿側壁12之圓周方向大致等間隔地形成。藉此，處理空間V1內之氣體於俯視下更均勻地排出。藉此，可使流經處理空間V1之氣體之流動更均一。再者，內排氣口12a之個數可適當變更，更佳為形成3個以上。若形成3個以上內排氣口12a，則可適當地使氣體之流動均一化。Several inner exhaust ports 12a may also be provided. FIG. 2 is a diagram schematically showing an example of the configuration of the inner chamber 10 . In FIG. 2, a horizontal cross-sectional view of the inner chamber 10 is shown. In the example of FIG. 2 , four inner exhaust ports 12 a are formed in the inner chamber 10 . The four inner exhaust ports 12 a are formed at substantially equal intervals along the circumferential direction of the side wall 12 . Thereby, the gas in the processing space V1 is discharged more uniformly in a plan view. Thereby, the flow of the gas flowing through the processing space V1 can be made more uniform. Furthermore, the number of the inner exhaust ports 12a can be appropriately changed, and it is more preferable to form three or more. When three or more inner exhaust ports 12a are formed, the flow of gas can be appropriately uniformized.

再次參照圖1，於外腔室20形成外排氣口23a。排氣部50經由外排氣口23a抽吸內腔室10與外腔室20之間之外側空間V2之氣體並向外部排出。藉此，處理空間V1內之氣體亦經由內排氣口12a及外排氣口23a向排氣部50排出。因此，外腔室20內(處理空間V1及外側空間V2)之壓力降低。Referring again to FIG. 1 , an outer exhaust port 23 a is formed in the outer chamber 20 . The exhaust part 50 sucks the gas in the outer space V2 between the inner chamber 10 and the outer chamber 20 through the outer exhaust port 23a and discharges it to the outside. Thereby, the gas in the processing space V1 is also discharged to the exhaust part 50 through the inner exhaust port 12a and the outer exhaust port 23a. Therefore, the pressure in the outer chamber 20 (the processing space V1 and the outer space V2 ) decreases.

於圖1之例中，外排氣口23a形成於外腔室20之下板23，沿下板之厚度方向貫通下板23。又，於圖1之例中，外排氣口23a形成有數個(此處為2個)。數個外排氣口23a亦可沿圓周方向大致等間隔地形成。藉此，處理空間V1內之氣體更均勻地自內排氣口12a排出。In the example of FIG. 1 , the outer exhaust port 23 a is formed in the lower plate 23 of the outer chamber 20 and penetrates through the lower plate 23 along the thickness direction of the lower plate. In addition, in the example of FIG. 1, several (here, two) of the external exhaust ports 23a are formed. A plurality of outer exhaust ports 23a may also be formed at approximately equal intervals in the circumferential direction. Thereby, the gas in the processing space V1 is more uniformly discharged from the inner exhaust port 12a.

於圖1之例中，排氣部50包括排氣管51、排氣閥52、及真空泵53。排氣管51連接於外腔室20之外排氣口23a。於圖1之例中，由於形成有數個外排氣口23a，故設置數個排氣管51。於圖1之例中，數個排氣管51合流而共通地連接於真空泵53。In the example of FIG. 1 , the exhaust unit 50 includes an exhaust pipe 51 , an exhaust valve 52 , and a vacuum pump 53 . The exhaust pipe 51 is connected to the exhaust port 23 a outside the outer chamber 20 . In the example of FIG. 1, since several outer exhaust ports 23a are formed, several exhaust pipes 51 are provided. In the example of FIG. 1 , the plurality of exhaust pipes 51 are connected to the vacuum pump 53 in common.

真空泵53抽吸排氣管51內之氣體向外部排出。真空泵53藉由控制部70控制。排氣閥52設置於排氣管51之中途，調整排氣管51內之流路之開度。排氣閥52之開度藉由控制部70控制。控制部70例如以處理空間V1內之壓力成為既定之製程壓力之方式對排氣閥52及真空泵53進行控制。The vacuum pump 53 sucks the gas in the exhaust pipe 51 and discharges it to the outside. The vacuum pump 53 is controlled by the control unit 70 . The exhaust valve 52 is provided in the middle of the exhaust pipe 51 , and adjusts the opening degree of the flow path in the exhaust pipe 51 . The opening degree of the exhaust valve 52 is controlled by the control unit 70 . The control part 70 controls the exhaust valve 52 and the vacuum pump 53 so that the pressure in the processing space V1 may become a predetermined process pressure, for example.

於內腔室10及外腔室20形成有用以搬出搬入基板W1之搬出搬入口(未圖示)。例如，於內腔室10之側壁12及外腔室20之側壁22之各者形成有搬出搬入口。又，於該搬出搬入口分別設置有擋板(未圖示)。藉由關閉該擋板，可氣密地關閉搬出搬入口，藉由打開擋板，開啟搬出搬入口。擋板之開關藉由控制部70控制。The inner chamber 10 and the outer chamber 20 are formed with an unloading and loading port (not shown) for loading and unloading the substrate W1. For example, each of the side wall 12 of the inner chamber 10 and the side wall 22 of the outer chamber 20 is formed with a carry-out port. Moreover, the shutter (not shown) is provided in each of this carry-out and carry-out entrance. By closing the shutter, the carry-in/out port can be airtightly closed, and by opening the shutter, the carry-out/in-out port can be opened. The opening and closing of the shutter is controlled by the control unit 70 .

加熱載置部30設置於內腔室10內，加熱並載置基板W1。加熱載置部30包括載置台31及加熱部32。於載置台31上載置基板W1。基板W1以大致水平姿勢載置於載置台31上。換言之，基板W1以其厚度方向沿著鉛直方向之姿勢載置於載置台31上。The heating mounting part 30 is provided in the inner chamber 10, and heats and mounts the substrate W1. The heating mounting part 30 includes a mounting table 31 and a heating part 32 . The substrate W1 is mounted on the mounting table 31 . The substrate W1 is placed on the mounting table 31 in a substantially horizontal posture. In other words, the substrate W1 is placed on the mounting table 31 in a posture in which the thickness direction thereof is along the vertical direction.

基板W1例如為半導體基板。於基板W1為半導體基板之情形時，基板W1呈大致圓板形狀。藉由搬入基板處理裝置1之前之步驟，於基板W1之上表面形成蝕刻對象膜。蝕刻對象膜雖無特別限定，但例如為氧化膜或氮化膜。此處，作為一例，藉由CVD(化學氣相沈積法)、ALD(原子層沈積法)或熱氧化等，於基板W1之上表面形成氧化膜。The substrate W1 is, for example, a semiconductor substrate. When the substrate W1 is a semiconductor substrate, the substrate W1 has a substantially disc shape. The etching target film is formed on the upper surface of the substrate W1 by the steps before being carried into the substrate processing apparatus 1 . The film to be etched is not particularly limited, but is, for example, an oxide film or a nitride film. Here, as an example, an oxide film is formed on the upper surface of the substrate W1 by CVD (Chemical Vapor Deposition), ALD (Atomic Layer Deposition), thermal oxidation, or the like.

亦可於載置台31設置保持基板W1之夾盤機構。例如載置台31具有與基板W1之下表面對向之上表面，亦可於該上表面設置數個夾盤銷(未圖示)。數個夾盤銷沿基板W1之周緣大致等間隔地設置，保持基板W1之周緣。再者，作為夾盤機構，可採用除夾盤銷以外之各種機構(例如，吸盤等)。此處，作為一例，載置台31包含夾盤機構。載置台31之夾盤機構藉由控制部70進行控制。A chuck mechanism for holding the substrate W1 may be provided on the stage 31 . For example, the mounting table 31 has an upper surface facing the lower surface of the substrate W1, and a plurality of chuck pins (not shown) may also be provided on the upper surface. A plurality of chuck pins are provided at substantially equal intervals along the peripheral edge of the substrate W1, and hold the peripheral edge of the substrate W1. Furthermore, as the chuck mechanism, various mechanisms other than the chuck pin (for example, a suction cup, etc.) can be used. Here, as an example, the mounting table 31 includes a chuck mechanism. The chuck mechanism of the stage 31 is controlled by the control unit 70 .

加熱部32對載置於載置台31上之基板W1進行加熱。加熱部32設置於較基板W1更下側，例如包含產生焦耳熱之電阻絲。電阻絲適當地藉由絕緣膜覆蓋。作為更具體之一例，加熱部32亦可內置於載置台31。例如，電阻絲於俯視下二維地佈置。載置台31藉由內置之加熱部32加熱。加熱部32藉由控制部70控制。The heating unit 32 heats the substrate W1 placed on the stage 31 . The heating portion 32 is disposed on the lower side of the substrate W1, and includes, for example, a resistance wire that generates Joule heat. The resistance wire is suitably covered by an insulating film. As a more specific example, the heating unit 32 may be built in the mounting table 31 . For example, the resistance wires are arranged two-dimensionally in plan view. The stage 31 is heated by the built-in heating unit 32 . The heating unit 32 is controlled by the control unit 70 .

於圖1之例中，加熱載置部30包括旋轉機構33。旋轉機構33使基板W1繞通過基板W1之中心沿鉛直方向之旋轉軸旋轉。例如，旋轉機構33包括馬達(未圖示)及軸(未圖示)。軸之一端連結於載置台31之下表面，另一端連結於馬達。軸將馬達之旋轉力傳遞至載置台31，使載置台31繞該旋轉軸旋轉。藉此，可使保持於載置台31之基板W1旋轉。旋轉機構33藉由控制部70控制。In the example of FIG. 1 , the heating mounting part 30 includes a rotating mechanism 33 . The rotation mechanism 33 rotates the substrate W1 around a vertical rotation axis passing through the center of the substrate W1. For example, the rotation mechanism 33 includes a motor (not shown) and a shaft (not shown). One end of the shaft is connected to the lower surface of the mounting table 31, and the other end is connected to the motor. The shaft transmits the rotational force of the motor to the mounting table 31, and the mounting table 31 is rotated around the rotation axis. Thereby, the board|substrate W1 hold|maintained by the mounting table 31 can be rotated. The rotation mechanism 33 is controlled by the control unit 70 .

氣體導入部40具有設置於內腔室10內之氣體導入口41a，自氣體導入口41a向處理空間V1導入蝕刻氣體。氣體導入口41a設置於與基板W1之表面(圖1中為上表面)對向之位置。於圖1之例中，氣體導入口41a位於較保持於載置台31之基板W1更上側。氣體導入部40自氣體導入口41a向基板W1之上表面噴出蝕刻氣體。於圖1之例中，模式性地以虛線之箭頭表示蝕刻氣體於處理空間V1內流動之方向。The gas introduction part 40 has a gas introduction port 41a provided in the inner chamber 10, and an etching gas is introduced into the processing space V1 from the gas introduction port 41a. The gas introduction port 41a is provided at a position facing the surface (upper surface in FIG. 1 ) of the substrate W1 . In the example of FIG. 1 , the gas introduction port 41 a is located above the substrate W1 held on the stage 31 . The gas introduction part 40 ejects the etching gas toward the upper surface of the substrate W1 from the gas introduction port 41a. In the example of FIG. 1 , the direction in which the etching gas flows in the processing space V1 is schematically indicated by a dotted arrow.

蝕刻氣體作用於基板W1之上表面，對其上表面之蝕刻對象膜進行蝕刻。該蝕刻氣體包含氫氟酸氣體或氟氣體等反應性氣體。又，蝕刻氣體亦可進而包含水蒸氣或乙醇氣體等具有羥基(OH基)之添加氣體。又，蝕刻氣體亦可進而包含氬氣、氦氣或氮氣等惰性氣體。此處提及之惰性氣體係指與基板W1之反應性較低之氣體。The etching gas acts on the upper surface of the substrate W1 to etch the film to be etched on the upper surface. The etching gas contains reactive gas such as hydrofluoric acid gas or fluorine gas. In addition, the etching gas may further contain an additive gas having a hydroxyl group (OH group) such as water vapor or ethanol gas. In addition, the etching gas may further contain an inert gas such as argon, helium, or nitrogen. The inert gas system mentioned here refers to a gas with low reactivity with the substrate W1.

於圖1之例中，氣體導入部40包括導入管41、導入閥42、及氣體供給源43。導入管41貫通內腔室10及外腔室20，其一端於內腔室10內之處理空間V1中位於較基板W1更上側。於導入管41之一端形成氣體導入口41a。於圖1之例中，導入管41於外腔室20內沿鉛直方向延伸，沿厚度方向貫通內腔室10之上板11及外腔室20之上板21。導入管41與內腔室10之間藉由既定之密封部(例如，O形環)氣密地密封，導入管41與外腔室20之間亦藉由既定之密封部(例如，O形環)氣密地密封。In the example of FIG. 1 , the gas introduction part 40 includes an introduction pipe 41 , an introduction valve 42 , and a gas supply source 43 . The introduction tube 41 penetrates through the inner chamber 10 and the outer chamber 20 , and one end thereof is positioned above the substrate W1 in the processing space V1 in the inner chamber 10 . A gas introduction port 41 a is formed at one end of the introduction pipe 41 . In the example of FIG. 1 , the introduction pipe 41 extends in the vertical direction in the outer chamber 20 and penetrates through the upper plate 11 of the inner chamber 10 and the upper plate 21 of the outer chamber 20 in the thickness direction. The introduction tube 41 and the inner chamber 10 are hermetically sealed by a predetermined sealing portion (for example, an O-ring), and between the introduction tube 41 and the outer chamber 20 are also sealed by a predetermined sealing portion (for example, an O-ring). ring) hermetically sealed.

於導入管41之另一端連接氣體供給源43。氣體供給源43向導入管41供給蝕刻氣體。再者，於圖1之例中，雖僅簡易地示出一個氣體供給源43，但如上所述，蝕刻氣體可包含數種氣體，故可設置與該數種氣體對應之數個氣體供給源43。於此情形時，導入管41分支成數個，其分支端分別連接於氣體供給源43。A gas supply source 43 is connected to the other end of the introduction pipe 41 . The gas supply source 43 supplies the etching gas to the introduction pipe 41 . Furthermore, in the example of FIG. 1 , although only one gas supply source 43 is simply shown, as described above, the etching gas may contain several types of gases, so several gas supply sources corresponding to the several types of gases may be provided. 43. In this case, the introduction pipe 41 is branched into several, and the branch ends thereof are respectively connected to the gas supply source 43 .

導入閥42設置於導入管41之中途。於設置數個氣體供給源43，且導入管41分支成數個之情形時，於該分支管之各者設置導入閥42。導入閥42藉由控制部70控制。導入閥42亦可為能夠調整流經導入管41之內部之氣體之流量之閥門。The introduction valve 42 is provided in the middle of the introduction pipe 41 . In the case where several gas supply sources 43 are provided and the introduction pipe 41 is branched into several, an introduction valve 42 is provided in each of the branch pipes. The introduction valve 42 is controlled by the control unit 70 . The introduction valve 42 may also be a valve capable of adjusting the flow rate of the gas flowing through the inside of the introduction pipe 41 .

藉由打開導入閥42，蝕刻氣體自氣體供給源43流經導入管41之內部而自氣體導入口41a噴出。自氣體導入口41a導入至處理空間V1內之蝕刻氣體向下側流動。於圖1之例中，設置下述整流部80，蝕刻氣體藉由通過整流部80而整流。通過整流部80之蝕刻氣體向基板W1之上表面流動，對上表面之蝕刻對象膜進行氣相分解並蝕刻。By opening the introduction valve 42, the etching gas flows from the gas supply source 43 through the inside of the introduction pipe 41 and is ejected from the gas introduction port 41a. The etching gas introduced into the processing space V1 from the gas introduction port 41a flows downward. In the example of FIG. 1 , the following rectification part 80 is provided, and the etching gas is rectified by passing through the rectification part 80 . The etching gas passing through the rectification portion 80 flows to the upper surface of the substrate W1, and the etching target film on the upper surface is decomposed and etched in the gas phase.

內排氣口12a位於較載置台31上之基板W1更下側，故藉由氣相分解產生之氣體自基板W1之周緣向下側流動，經由內排氣口12a及外排氣口23a向排氣部50排出。又，無助於蝕刻之蝕刻氣體亦經由內排氣口12a及外排氣口23a向排氣部50排出。The inner exhaust port 12a is located on the lower side of the substrate W1 on the stage 31, so the gas generated by the gas phase decomposition flows from the periphery of the substrate W1 to the lower side through the inner exhaust port 12a and the outer exhaust port 23a. The exhaust part 50 discharges. Moreover, the etching gas which does not contribute to etching is also exhausted to the exhaust part 50 through the inner exhaust port 12a and the outer exhaust port 23a.

整流部80設置於氣體導入部40之氣體導入口41a與加熱載置部30之間。整流部80具有透氣性，自氣體導入部40導入至處理空間V1內之蝕刻氣體通過整流部80，藉此，對蝕刻氣體進行整流。通過整流部80之蝕刻氣體進而向下側流動而供給至基板W1之上表面。整流部80與基板W1之間之距離例如設定為10[mm]左右以下。於整流部80與基板W1之間之距離較長之情形時，存在經整流部80整流之蝕刻氣體於基板W1之上表面附近再次紊亂之可能性，但若該距離為10[mm]左右以下，則不易產生此種紊亂。The rectification part 80 is provided between the gas introduction port 41 a of the gas introduction part 40 and the heating mounting part 30 . The rectification part 80 has air permeability, and the etching gas introduced into the processing space V1 from the gas introduction part 40 passes through the rectification part 80, thereby rectifying the etching gas. The etching gas passing through the rectifying portion 80 further flows downward and is supplied to the upper surface of the substrate W1. The distance between the rectification part 80 and the board|substrate W1 is set to about 10 [mm] or less, for example. When the distance between the rectification part 80 and the substrate W1 is long, there is a possibility that the etching gas rectified by the rectification part 80 may be disturbed again near the upper surface of the substrate W1, but if the distance is about 10 [mm] or less , it is not easy to produce such a disorder.

圖3係概略性地表示整流部80之構成之一例之俯視圖。於圖3之例中，整流部80為沖孔板。整流部80呈板狀形狀，以其厚度方向沿著鉛直方向之姿勢設置。整流部80於俯視下呈大致圓形，其周緣固定於內腔室10之側壁22之內周面。於圖3之例中，於整流部80形成數個貫通孔80a。各貫通孔80a於俯視下例如呈大致圓形，其直徑例如設定為0.1～2[mm]左右。數個貫通孔80a於俯視下二維地分散配置，於圖3之例中，呈大致矩陣狀配置。數個貫通孔80a之尺寸及個數可適當變更。FIG. 3 is a plan view schematically showing an example of the configuration of the rectifying portion 80 . In the example of FIG. 3, the rectification|straightening part 80 is a perforated board. The rectification part 80 has a plate-like shape, and is provided in a posture in which the thickness direction thereof is along the vertical direction. The rectifying portion 80 is substantially circular in plan view, and its peripheral edge is fixed to the inner peripheral surface of the side wall 22 of the inner chamber 10 . In the example of FIG. 3 , a plurality of through holes 80 a are formed in the rectifying portion 80 . Each through-hole 80a has a substantially circular shape in plan view, and its diameter is set to, for example, about 0.1 to 2 [mm]. The plurality of through-holes 80a are two-dimensionally distributed in plan view, and in the example of FIG. 3 , are arranged in a substantially matrix shape. The size and number of the plurality of through holes 80a can be appropriately changed.

再者，於圖1之例中，雖設置1個整流部80，但亦可設置數個整流部80。數個整流部80於氣體導入口41a與基板W1之間在鉛直方向上隔開間隔地設置。貫通孔80a之位置亦可於鉛直方向上於相鄰之整流部80之間錯開。例如，對設置第1整流部80及第2整流部80之情形進行概括說明。第1整流部80之貫通孔80a於鉛直方向上不與第2整流部80之貫通孔80a對向，與未形成貫通孔80a之區域對向。反之，第2整流部80之貫通孔80a亦與第1整流部80中未設置貫通孔80a之區域對向。藉此，藉由使氣體通過數個整流部80而進一步進行整流。In addition, in the example of FIG. 1, although one rectification part 80 is provided, several rectification parts 80 may be provided. The several rectification|straightening parts 80 are provided at intervals in the vertical direction between the gas introduction port 41a and the board|substrate W1. The positions of the through holes 80a may also be shifted between the adjacent rectifying portions 80 in the vertical direction. For example, the case where the 1st rectification|straightening part 80 and the 2nd rectification|straightening part 80 are provided is demonstrated generally. The through-hole 80a of the first rectification portion 80 does not face the through-hole 80a of the second rectification portion 80 in the vertical direction, but faces the region where the through-hole 80a is not formed. Conversely, the through hole 80a of the second rectification portion 80 also faces the region of the first rectification portion 80 where the through hole 80a is not provided. Thereby, the gas is further rectified by passing the gas through the plurality of rectification parts 80 .

又，整流部80亦可呈網狀之形狀。例如，整流部80亦可具有塗佈有PTFE(聚四氟乙烯)等氟系樹脂之網格構造。In addition, the rectification part 80 may have a mesh shape. For example, the rectifying portion 80 may have a mesh structure coated with a fluorine-based resin such as PTFE (polytetrafluoroethylene).

加熱部60安裝於內腔室10，對內腔室10進行加熱。加熱部60藉由控制部70控制，使內腔室10之內周面之溫度升溫至保持於載置台31之基板W1之溫度以上之溫度。The heating unit 60 is attached to the inner chamber 10 and heats the inner chamber 10 . The heating unit 60 is controlled by the control unit 70 to raise the temperature of the inner peripheral surface of the inner chamber 10 to a temperature equal to or higher than the temperature of the substrate W1 held on the mounting table 31 .

如圖1所例示，加熱部60亦可設置於內腔室10之外周面。於圖1之例中，加熱部60設置於內腔室10之側壁12之外周面。該加熱部60亦可呈包圍側壁12之筒狀形狀。又，加熱部60可與內腔室10之外周面密接。藉此，加熱部60可更有效率地對內腔室10進行加熱。加熱部60設置於側壁12中包含至少與基板W1於水平方向上對向之位置之區域。As shown in FIG. 1 , the heating part 60 may also be provided on the outer peripheral surface of the inner chamber 10 . In the example of FIG. 1 , the heating part 60 is disposed on the outer peripheral surface of the side wall 12 of the inner chamber 10 . The heating portion 60 may also have a cylindrical shape surrounding the side wall 12 . In addition, the heating portion 60 may be in close contact with the outer peripheral surface of the inner chamber 10 . Thereby, the heating part 60 can heat the inner chamber 10 more efficiently. The heating portion 60 is disposed in the side wall 12 in an area including at least a position opposite to the substrate W1 in the horizontal direction.

加熱部60例如亦可具有產生焦耳熱之電阻絲(未圖示)。電阻絲適當地藉由絕緣膜覆蓋。亦可藉由使該電阻絲沿內腔室10之外周面佈置而對內腔室10進行加熱。再者，加熱部60亦可包含內置電阻絲並與內腔室10之外周面密接之傳熱構件(例如金屬)。The heating part 60 may also have a resistance wire (not shown) that generates Joule heat, for example. The resistance wire is suitably covered by an insulating film. The inner chamber 10 can also be heated by arranging the resistance wire along the outer peripheral surface of the inner chamber 10 . Furthermore, the heating portion 60 may also include a heat transfer member (eg, metal) with a built-in resistance wire and in close contact with the outer peripheral surface of the inner chamber 10 .

或者，加熱部60亦可具有熱介質配管(未圖示)。熱介質配管沿內腔室10之側壁12之外周面佈置。例如，熱介質配管呈螺旋狀佈置，包圍側壁12。於熱介質配管之內部流經高溫之熱介質(亦稱為冷媒)。藉由該熱介質與內腔室10之間之熱交換，可對內腔室10進行加熱。熱介質配管之兩端連接於加熱部(未圖示)。若向內腔室10散熱而變成低溫之熱介質自熱介質配管之一端流入加熱部，則該加熱部加熱該熱介質，將高溫之熱介質向熱介質配管之另一端供給。藉此，高溫之熱介質再次流經熱介質配管而對內腔室10進行加熱。如此，熱介質於熱介質配管中循環。再者，加熱部60亦可包含內置熱介質配管並與內腔室10之外周面密接之傳熱構件(例如金屬)。Alternatively, the heating unit 60 may have heat medium piping (not shown). The heat medium piping is arranged along the outer peripheral surface of the side wall 12 of the inner chamber 10 . For example, the heat medium piping is arranged in a spiral shape and surrounds the side wall 12 . A high-temperature heat medium (also called a refrigerant) flows through the heat medium piping. The inner chamber 10 can be heated by the heat exchange between the heat medium and the inner chamber 10 . Both ends of the heat medium piping are connected to a heating unit (not shown). When the heat medium which radiates heat to the inner chamber 10 and becomes low temperature flows from one end of the heat medium pipe into the heating part, the heating part heats the heat medium and supplies the high temperature heat medium to the other end of the heat medium pipe. Thereby, the high temperature heat medium flows through the heat medium piping again to heat the inner chamber 10 . In this way, the heat medium circulates in the heat medium piping. Furthermore, the heating unit 60 may include a heat transfer member (eg, metal) that has a built-in heat medium piping and is in close contact with the outer peripheral surface of the inner chamber 10 .

又，加熱部60未必需要設置於內腔室10之外周面。例如，加熱部60可埋設於內腔室10本身，亦可設置於內腔室10之內周面。於加熱部60設置於內腔室10之外周面之情形時，相較於加熱部60埋設於內腔室10之情形，加熱部60之設置容易。又，由於加熱部60未露出於內腔室10內之處理空間V1，故即便因加熱部60本身而產生顆粒等，該顆粒亦不易附著於基板W1。In addition, the heating unit 60 does not necessarily need to be provided on the outer peripheral surface of the inner chamber 10 . For example, the heating portion 60 may be embedded in the inner chamber 10 itself, or may be disposed on the inner peripheral surface of the inner chamber 10 . When the heating part 60 is disposed on the outer peripheral surface of the inner chamber 10 , compared with the case where the heating part 60 is embedded in the inner chamber 10 , the installation of the heating part 60 is easier. In addition, since the heating part 60 is not exposed in the processing space V1 in the inner chamber 10, even if particles or the like are generated by the heating part 60 itself, the particles are not easily attached to the substrate W1.

控制部70總括地控制基板處理裝置1。控制部70例如包括：進行各種運算處理之中央處理單元(CPU，Central Processing Unit)、記憶程式等之唯讀記憶體(ROM，Read Only Memory)、成為運算處理之作業區域之隨機存取記憶體(RAM，Random Access Memory)、記憶程式及各種資料檔案等之硬碟、具有經由區域網路(LAN，Local Area Network)等之資料通信功能之資料通信部等藉由匯流排線等相互連接之一般之工廠自動化(FA，Factory Automation)電腦。又，控制部70與進行各種顯示之顯示器、包括鍵盤及滑鼠等之輸入部等連接。再者，控制部70執行之功能之一部分或全部亦可藉由專用硬體電路而實現。The control unit 70 collectively controls the substrate processing apparatus 1 . The control unit 70 includes, for example, a central processing unit (CPU, Central Processing Unit) for performing various arithmetic processes, a read-only memory (ROM, Read Only Memory) for storing programs, etc., and a random access memory serving as a work area for arithmetic processing. (RAM, Random Access Memory), hard disks such as memory programs and various data files, data communication units with data communication functions via a local area network (LAN, Local Area Network), etc. are connected to each other by bus cables, etc. General factory automation (FA, Factory Automation) computer. In addition, the control unit 70 is connected to a display for performing various displays, an input unit including a keyboard, a mouse, and the like. Furthermore, part or all of the functions performed by the control unit 70 may be implemented by dedicated hardware circuits.

＜基板處理裝置之動作之概要＞ 首先，控制部70控制內腔室10之擋板及外腔室20之擋板，打開兩擋板。藉此，基板處理裝置1之搬出搬入口開口。未圖示之基板搬送裝置經由該搬出搬入口將基板W1搬入至基板處理裝置1內，載置於加熱載置部30。若基板搬送裝置之搬入動作結束，則控制部70控制兩擋板，關閉兩擋板。<Outline of the operation of the substrate processing apparatus> First, the control unit 70 controls the shutter of the inner chamber 10 and the shutter of the outer chamber 20 to open the two shutters. Thereby, the carrying-out and carrying-out opening of the substrate processing apparatus 1 is opened. A substrate transfer apparatus (not shown) transfers the substrate W1 into the substrate processing apparatus 1 through the transfer port, and mounts the substrate on the heating mounting portion 30 . When the carrying-in operation of the substrate transfer apparatus is completed, the control unit 70 controls both shutters and closes both shutters.

控制部70控制排氣部50，將內腔室10內之處理空間V1之壓力減壓至既定製程壓力。既定製程壓力例如設定為1～300[Torr]左右之範圍內。控制部70可於蝕刻處理中以處理空間V1之壓力維持於既定之壓力範圍內之方式控制排氣部50。The control unit 70 controls the exhaust unit 50 to depressurize the pressure of the processing space V1 in the inner chamber 10 to a predetermined process pressure. The predetermined process pressure is set in the range of about 1 to 300 [Torr], for example. The control unit 70 can control the exhaust unit 50 in such a manner that the pressure of the processing space V1 is maintained within a predetermined pressure range during the etching process.

又，控制部70控制加熱部32及加熱部60，分別對基板W1及內腔室10進行加熱。加熱部32加熱基板W1，使基板W1之上表面之溫度升溫至例如50度以上且200度以下之範圍內。In addition, the control unit 70 controls the heating unit 32 and the heating unit 60 to heat the substrate W1 and the inner chamber 10, respectively. The heating part 32 heats the board|substrate W1, and raises the temperature of the upper surface of the board|substrate W1, for example, in the range of 50 degrees or more and 200 degrees or less.

加熱部60以內腔室10之內周面之溫度成為基板W1之上表面之溫度以上之方式對內腔室10進行加熱。更具體而言，加熱部60以側壁12之內周面中至少與基板W1於水平方向上對向之區域之溫度成為基板W1之上表面之溫度以上之方式對內腔室10進行加熱。內腔室10之內周面之溫度例如設定為80度以上且230度以下之範圍內之溫度，例如設定為較基板W1之上表面之溫度高30度以上之溫度。The heating part 60 heats the inner chamber 10 so that the temperature of the inner peripheral surface of the inner chamber 10 becomes equal to or higher than the temperature of the upper surface of the substrate W1. More specifically, the heating unit 60 heats the inner chamber 10 so that the temperature of at least a region of the inner peripheral surface of the side wall 12 facing the substrate W1 in the horizontal direction becomes equal to or higher than the temperature of the upper surface of the substrate W1. The temperature of the inner peripheral surface of the inner chamber 10 is set to, for example, a temperature in the range of 80 degrees or more and 230 degrees or less, for example, a temperature higher than the temperature of the upper surface of the substrate W1 by 30 degrees or more.

控制部70可於蝕刻處理中以基板W1及內腔室10之溫度維持於各者之溫度範圍內之方式控制加熱部32及加熱部60。The control unit 70 can control the heating unit 32 and the heating unit 60 in such a manner that the temperatures of the substrate W1 and the inner chamber 10 are maintained within the respective temperature ranges during the etching process.

繼而，控制部70控制旋轉機構33，使基板W1旋轉。控制部70於蝕刻處理中以基板W1之旋轉速度維持於既定之速度範圍內之方式對旋轉機構33進行控制。Next, the control part 70 controls the rotation mechanism 33, and rotates the board|substrate W1. The control unit 70 controls the rotation mechanism 33 so that the rotation speed of the substrate W1 is maintained within a predetermined speed range during the etching process.

繼而，控制部70控制氣體導入部40，將蝕刻氣體導入至內腔室10內之處理空間V1內。例如，反應性氣體之流量設定為100～3000[sccm]左右，惰性氣體之流量設定為100～15000[sccm]左右，添加氣體之流量設定為0～3000[sccm]。Then, the control part 70 controls the gas introduction part 40 to introduce the etching gas into the processing space V1 in the inner chamber 10 . For example, the flow rate of the reactive gas is set at about 100 to 3000 [sccm], the flow rate of the inert gas is set at about 100 to 15000 [sccm], and the flow rate of the additive gas is set at about 0 to 3000 [sccm].

自氣體導入口41a噴出之蝕刻氣體藉由整流部80整流，經整流之蝕刻氣體對基板W1之上表面之蝕刻對象膜進行氣相分解而蝕刻。藉由氣相分解產生之氣體及無助於氣相分解之蝕刻氣體經由內排氣口12a及外排氣口23a向排氣部50排出。The etching gas ejected from the gas introduction port 41a is rectified by the rectification part 80, and the rectified etching gas decomposes and etches the etching target film on the upper surface of the substrate W1 by vapor phase decomposition. The gas generated by the gas phase decomposition and the etching gas that does not contribute to the gas phase decomposition are discharged to the exhaust part 50 through the inner exhaust port 12a and the outer exhaust port 23a.

自開始導入蝕刻氣體起經過蝕刻處理所需之處理時間時，控制部70控制基板處理裝置1之各種構成要素，停止各動作。藉此，對基板W1之蝕刻處理結束。When the processing time required for the etching process has elapsed since the introduction of the etching gas, the control unit 70 controls various components of the substrate processing apparatus 1 and stops each operation. Thereby, the etching process with respect to the board|substrate W1 is complete|finished.

如上所述，於基板處理裝置1設置加熱部60，加熱部60於蝕刻處理中對內腔室10進行加熱。此處，為了進行比較，對未設置加熱部60之情形進行說明。於此情形時，基板W1之上表面之溫度高於內腔室10之側壁12之內周面之溫度。因此，自基板W1之上側流向基板W1之上表面之周緣部之下側之蝕刻氣體因對流而容易流向內腔室10之側壁12之內周面。藉此，流向基板W1之上表面之周緣部之蝕刻氣體減少。As described above, the substrate processing apparatus 1 is provided with the heating unit 60, and the heating unit 60 heats the inner chamber 10 during the etching process. Here, for comparison, the case where the heating part 60 is not provided is demonstrated. In this case, the temperature of the upper surface of the substrate W1 is higher than the temperature of the inner peripheral surface of the side wall 12 of the inner chamber 10 . Therefore, the etching gas flowing from the upper side of the substrate W1 to the lower side of the peripheral portion of the upper surface of the substrate W1 easily flows to the inner peripheral surface of the side wall 12 of the inner chamber 10 due to convection. Thereby, the amount of etching gas flowing to the peripheral portion of the upper surface of the substrate W1 is reduced.

又，由於構件之溫度越低，則蝕刻氣體越吸附於該構件，故於內腔室10之內周面之溫度較低之情形時，內腔室10之內周面之蝕刻氣體之吸附量增大。藉此，流向基板W1之上表面之周緣部之蝕刻氣體亦減少。In addition, since the lower the temperature of the member, the more the etching gas is adsorbed on the member, so when the temperature of the inner peripheral surface of the inner chamber 10 is low, the adsorption amount of the etching gas on the inner peripheral surface of the inner chamber 10 increase. Thereby, the etching gas which flows to the peripheral part of the upper surface of the board|substrate W1 also reduces.

如上所述，若流向基板W1之上表面之周緣之蝕刻氣體減少，則基板W1之上表面之中央部之蝕刻量與周緣部之蝕刻量之差增大。即，基板W1之面內蝕刻之均一性降低。As described above, when the amount of etching gas flowing to the periphery of the upper surface of the substrate W1 decreases, the difference between the etching amount of the central portion of the upper surface of the substrate W1 and the etching amount of the peripheral portion increases. That is, the uniformity of the in-plane etching of the substrate W1 decreases.

對此，加熱部60使內腔室10之內周面之溫度升溫至基板W1之上表面之溫度以上。藉此，可抑制蝕刻氣體因對流而流向內腔室10之內周面。又，亦可減少吸附於內腔室10之內周面之蝕刻氣體之量。In response to this, the heating unit 60 raises the temperature of the inner peripheral surface of the inner chamber 10 to be equal to or higher than the temperature of the upper surface of the substrate W1. Thereby, the flow of the etching gas to the inner peripheral surface of the inner chamber 10 due to convection can be suppressed. In addition, the amount of the etching gas adsorbed on the inner peripheral surface of the inner chamber 10 can also be reduced.

藉此，蝕刻氣體亦適當地供給至基板W1之上表面之周緣部，更均勻地對基板W1之上表面進行作用。因此，可提高基板W1之面內蝕刻之均一性。Thereby, the etching gas is also appropriately supplied to the peripheral portion of the upper surface of the substrate W1, and acts on the upper surface of the substrate W1 more uniformly. Therefore, the uniformity of the in-plane etching of the substrate W1 can be improved.

又，於內腔室10之側壁12之內周面之溫度高於基板W1之上表面之溫度之情形時，於較基板W1更外周側向下側流動之蝕刻氣體容易流向基板W1之上表面。藉此，可增大作用於基板W1之上表面之蝕刻氣體之量。因此，可提高產能。In addition, when the temperature of the inner peripheral surface of the side wall 12 of the inner chamber 10 is higher than the temperature of the upper surface of the substrate W1, the etching gas flowing from the outer peripheral side to the lower side of the substrate W1 easily flows to the upper surface of the substrate W1 . Thereby, the amount of the etching gas acting on the upper surface of the substrate W1 can be increased. Therefore, the productivity can be improved.

而且由於內腔室10之內周面之溫度高，故可降低蝕刻氣體於內腔室10之內周面吸附及液化之可能性。藉此，可降低因蝕刻氣體之液化導致之內腔室10之腐蝕之可能性。於例如採用水蒸氣作為添加氣體之情形時，若處理空間V1之壓力為100[Torr]左右，則水蒸氣於溫度為50度左右時液化。若液體之水附著於內腔室10，例如內腔室10可能腐蝕。加熱部60加熱內腔室10，使內腔室10之內周面之溫度升溫至高於50度之溫度，藉此可抑制或避免此種腐蝕。又，反應性氣體例如可於溫度為20度左右時液化。藉由加熱部60加熱內腔室10，亦可更確實地抑制反應性氣體之液化。Moreover, since the temperature of the inner peripheral surface of the inner chamber 10 is high, the possibility of adsorption and liquefaction of the etching gas on the inner peripheral surface of the inner chamber 10 can be reduced. Thereby, the possibility of corrosion of the inner chamber 10 caused by the liquefaction of the etching gas can be reduced. For example, when water vapor is used as the additive gas, if the pressure of the processing space V1 is about 100 [Torr], the water vapor liquefies when the temperature is about 50 degrees. If liquid water adheres to the inner chamber 10, for example, the inner chamber 10 may corrode. The heating part 60 heats the inner chamber 10 to raise the temperature of the inner peripheral surface of the inner chamber 10 to a temperature higher than 50 degrees, thereby suppressing or avoiding such corrosion. In addition, the reactive gas can be liquefied when the temperature is about 20 degrees, for example. By heating the inner chamber 10 by the heating part 60, the liquefaction of the reactive gas can also be suppressed more reliably.

但若內腔室10之內周面之溫度過高，則基板W1之周緣部可藉由來自內腔室10之側壁12之輻射熱而加熱。藉此，存在基板W1之上表面之周緣部之溫度高於基板W1之中央部之溫度之可能性。此種基板W1之溫度不均就面內蝕刻之均一性之觀點而言並不理想。因此，內腔室10之內周面之溫度較理想為被控制為基板W1之溫度不均成為既定範圍內。However, if the temperature of the inner peripheral surface of the inner chamber 10 is too high, the peripheral portion of the substrate W1 can be heated by the radiant heat from the side wall 12 of the inner chamber 10 . Thereby, there exists a possibility that the temperature of the peripheral part of the upper surface of the board|substrate W1 is higher than the temperature of the center part of the board|substrate W1. Such uneven temperature of the substrate W1 is not ideal from the viewpoint of uniformity of in-plane etching. Therefore, the temperature of the inner peripheral surface of the inner chamber 10 is preferably controlled so that the temperature unevenness of the substrate W1 is within a predetermined range.

又，於上述例中，加熱部60安裝於內腔室10之側壁12中至少與基板W1於水平方向上對向之區域。藉此，加熱部60可有效率地對側壁12中之該區域進行加熱。因此，可有效率地使因對流引起之蝕刻氣體向側壁22之內周面之流動變化為向基板W1側流動。In addition, in the above-mentioned example, the heating part 60 is installed on the side wall 12 of the inner chamber 10 at least in a region facing the substrate W1 in the horizontal direction. Thereby, the heating portion 60 can efficiently heat the area in the side wall 12 . Therefore, the flow of the etching gas to the inner peripheral surface of the side wall 22 due to convection can be efficiently changed to flow toward the substrate W1 side.

又，於上述例中，旋轉機構33於蝕刻處理中使基板W1旋轉。藉此，蝕刻氣體更均勻地對基板W1之上表面進行作用。因此，可進而提高面內蝕刻之均一性。Moreover, in the above-mentioned example, the rotation mechanism 33 rotates the board|substrate W1 during an etching process. Thereby, the etching gas acts on the upper surface of the substrate W1 more uniformly. Therefore, the uniformity of the in-plane etching can be further improved.

再者，於上述例中，雖然基板處理裝置1包含整流部80，但亦可不設置整流部80。其原因在於：藉由利用加熱部60加熱內腔室10，可提高基板W1之面內蝕刻之均一性。當然，為了進一步提高面內蝕刻之均一性，較理想為設置整流部80。同樣地，未必需要設置旋轉機構33，但為了進一步提高面內蝕刻之均一性，較理想為設置旋轉機構33。In addition, in the above-mentioned example, although the substrate processing apparatus 1 includes the rectification part 80, the rectification part 80 may not be provided. The reason for this is that the uniformity of the in-plane etching of the substrate W1 can be improved by heating the inner chamber 10 by the heating unit 60 . Of course, in order to further improve the uniformity of the in-plane etching, it is desirable to provide the rectifying portion 80 . Similarly, it is not necessary to provide the rotation mechanism 33, but it is desirable to provide the rotation mechanism 33 in order to further improve the uniformity of the in-plane etching.

又，於上述例中，雖然加熱部60設置於內腔室10之側壁12，但未必限於此。加熱部60亦可設置於上板11，亦可設置於下板13。總而言之，加熱部60只要設置於上板11、側壁12及下板13中之至少任一者即可，且只要使內腔室10之內周面(至少與基板W1於水平方向上對向之區域)之溫度升溫至基板W1之上表面之溫度以上即可。Moreover, in the above-mentioned example, although the heating part 60 is provided in the side wall 12 of the inner chamber 10, it is not necessarily limited to this. The heating part 60 can also be arranged on the upper plate 11 or on the lower plate 13 . In a word, the heating part 60 only needs to be disposed on at least any one of the upper plate 11 , the side wall 12 and the lower plate 13 , and as long as the inner peripheral surface of the inner chamber 10 (at least the horizontal direction opposite to the substrate W1 ) The temperature of the region) may be raised to be equal to or higher than the temperature of the upper surface of the substrate W1.

第2實施形態. 圖4係概略性地表示基板處理裝置1A之構成之一例之圖。基板處理裝置1A除加熱部61之有無以外，具有與基板處理裝置1相同之構成。加熱部61安裝於外腔室20，對外腔室20進行加熱。加熱部61之構成之一例與加熱部60相同。加熱部61藉由控制部70控制。The second embodiment. FIG. 4 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 1A. The substrate processing apparatus 1A has the same configuration as the substrate processing apparatus 1 except for the presence or absence of the heating unit 61 . The heating unit 61 is attached to the outer chamber 20 and heats the outer chamber 20 . An example of the configuration of the heating unit 61 is the same as that of the heating unit 60 . The heating unit 61 is controlled by the control unit 70 .

如圖4所例示，加熱部61亦可設置於外腔室20之外周面。例如，加熱部61呈沿圓周方向包圍外腔室20之側壁22之外周面之筒狀形狀。加熱部61可與外腔室20之外周面密接。藉此，加熱部61可更有效率地對外腔室20進行加熱。As shown in FIG. 4 , the heating part 61 may also be provided on the outer peripheral surface of the outer chamber 20 . For example, the heating portion 61 has a cylindrical shape surrounding the outer peripheral surface of the side wall 22 of the outer chamber 20 in the circumferential direction. The heating portion 61 may be in close contact with the outer peripheral surface of the outer chamber 20 . Thereby, the heating part 61 can heat the outer chamber 20 more efficiently.

加熱部61以外腔室20之內周面之溫度於蝕刻處理中維持既定之溫度範圍之方式對外腔室20進行加熱。作為既定之溫度範圍，採用可抑制蝕刻氣體之液化之溫度範圍。具體而言，採用高於蝕刻氣體之沸點(製程壓力下之沸點)之溫度範圍。藉此，可降低蝕刻氣體於外腔室20之內周面液化之可能性。作為具體之一例，加熱部61亦可使外腔室20之內周面升溫至100度以上。藉此，即便例如包含水蒸氣作為添加氣體，亦可避免該水蒸氣於外腔室20之內周面液化。The heating portion 61 heats the outer chamber 20 in such a way that the temperature of the inner peripheral surface of the outer chamber 20 is maintained within a predetermined temperature range during the etching process. As a predetermined temperature range, the temperature range which can suppress the liquefaction of an etching gas is used. Specifically, a temperature range higher than the boiling point of the etching gas (the boiling point at the process pressure) is used. In this way, the possibility of the etching gas being liquefied on the inner peripheral surface of the outer chamber 20 can be reduced. As a specific example, the heating unit 61 may raise the temperature of the inner peripheral surface of the outer chamber 20 to 100 degrees or more. Thereby, even if water vapor is contained as the additive gas, for example, the water vapor can be prevented from liquefying on the inner peripheral surface of the outer chamber 20 .

於基板處理裝置1A中，於外腔室20之內周側設置有內腔室10，故即便外腔室20之溫度高，來自外腔室20之熱線亦被內腔室10遮擋，而不對基板W1直接照射。因此，即便外腔室20之內周面之溫度高，外腔室20之輻射熱亦不易對基板W1之溫度分佈造成影響。換言之，外腔室20之內周面之溫度相較於內腔室10，不易對基板W1之溫度分佈造成影響。因此，即便外腔室20之內周面之溫度高，基板W1之面內蝕刻之均一性亦不易降低。In the substrate processing apparatus 1A, the inner chamber 10 is disposed on the inner peripheral side of the outer chamber 20 , so even if the temperature of the outer chamber 20 is high, the heat rays from the outer chamber 20 are blocked by the inner chamber 10 , and are not suitable for The substrate W1 is directly irradiated. Therefore, even if the temperature of the inner peripheral surface of the outer chamber 20 is high, the radiant heat of the outer chamber 20 does not easily affect the temperature distribution of the substrate W1. In other words, the temperature of the inner peripheral surface of the outer chamber 20 is less likely to affect the temperature distribution of the substrate W1 than the inner chamber 10 . Therefore, even if the temperature of the inner peripheral surface of the outer chamber 20 is high, the uniformity of the in-plane etching of the substrate W1 is not easily reduced.

因此，加熱部61亦可加熱外腔室20，使外腔室20之內周面之溫度升溫至內腔室10之內周面之溫度以上。藉此，相較於外腔室20之內周面之溫度低於內腔室10之內周面之溫度之情形，可進一步降低蝕刻氣體於外腔室20之內周面液化之可能性。藉此，可進而降低外腔室20之腐蝕之可能性。Therefore, the heating part 61 can also heat the outer chamber 20 to raise the temperature of the inner peripheral surface of the outer chamber 20 to be higher than the temperature of the inner peripheral surface of the inner chamber 10 . Therefore, compared with the case where the temperature of the inner peripheral surface of the outer chamber 20 is lower than the temperature of the inner peripheral surface of the inner chamber 10 , the possibility of liquefaction of the etching gas on the inner peripheral surface of the outer chamber 20 can be further reduced. Thereby, the possibility of corrosion of the outer chamber 20 can be further reduced.

再者，於上述例中，加熱部61雖安裝於外腔室20之側壁22，但只要設置於上板21、側壁22及下板23中之至少任一者即可。又，於上述例中，加熱部61雖安裝於外腔室20之外周面，但亦可埋設於外腔室20，或亦可安裝於外腔室20之內周面。Furthermore, in the above example, although the heating part 61 is installed on the side wall 22 of the outer chamber 20 , it only needs to be installed on at least any one of the upper plate 21 , the side wall 22 and the lower plate 23 . Moreover, in the above-mentioned example, although the heating part 61 is attached to the outer peripheral surface of the outer chamber 20, it may be embedded in the outer chamber 20, or may be attached to the inner peripheral surface of the outer chamber 20.

第3實施形態. 圖5係概略性地表示基板處理裝置1B之構成之一例之圖。基板處理裝置1B除整流部81之有無以外，具有與基板處理裝置1A相同之構成。3rd embodiment. FIG. 5 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 1B. The substrate processing apparatus 1B has the same configuration as that of the substrate processing apparatus 1A except for the presence or absence of the rectifying portion 81 .

整流部81設置於內腔室10內，於處理空間V1內之蝕刻氣體之流向上位於較基板W1更下游側。更具體而言，以整流部81之上表面與基板W1之上表面相同、或成為較該上表面更下側之高度位置之方式設置整流部81。整流部81呈大致圓環狀之板狀形狀，以其厚度方向沿著鉛直方向之方式設置。如圖5所例示，整流部81以包圍基板W1或加熱載置部30之方式設置。整流部81之外周緣亦可固定於內腔室10之內周面。The rectifying part 81 is provided in the inner chamber 10, and the flow direction of the etching gas in the processing space V1 is located more downstream than the substrate W1. More specifically, the rectification part 81 is provided so that the upper surface of the rectification part 81 may be the same as the upper surface of the board|substrate W1, or the height position may become lower side than this upper surface. The rectifying portion 81 has a substantially annular plate shape, and is provided so that the thickness direction thereof is along the vertical direction. As illustrated in FIG. 5 , the rectifying portion 81 is provided so as to surround the substrate W1 or the heating mounting portion 30 . The outer peripheral edge of the rectifying portion 81 may also be fixed to the inner peripheral surface of the inner chamber 10 .

整流部81具有透氣性，對蝕刻氣體進行整流。具體而言，於整流部81形成沿厚度方向貫通其自身之數個貫通孔(未圖示)。形成於整流部81之貫通孔具有與形成於整流部80之貫通孔80a相同之尺寸，與貫通孔80a同樣地，於俯視下分散配置。整流部81與整流部80同樣地亦可為沖孔板，亦可具有網格構造。The rectification portion 81 has air permeability and rectifies the etching gas. Specifically, a plurality of through holes (not shown) penetrating itself in the thickness direction are formed in the rectification portion 81 . The through-holes formed in the rectification portion 81 have the same size as the through-holes 80a formed in the rectification portion 80, and like the through-holes 80a, they are distributed in plan view. The rectification part 81 may be a punched plate similarly to the rectification part 80, and may have a mesh structure.

整流部81可於較基板W1更下游側對蝕刻氣體之流動進行整流。由於蝕刻氣體於處理空間V1連續流動，故藉由對下游側之蝕刻氣體之流動進行整流，亦可進一步對基板W1之上側之蝕刻氣體之流動進行整流。藉此，可進而提高基板W1之面內蝕刻之均一性。The rectifying portion 81 can rectify the flow of the etching gas on the downstream side of the substrate W1. Since the etching gas flows continuously in the processing space V1, by rectifying the flow of the etching gas on the downstream side, the flow of the etching gas on the upper side of the substrate W1 can be further rectified. Thereby, the uniformity of the in-plane etching of the substrate W1 can be further improved.

整流部81亦可與整流部80同樣地設置數個。數個整流部81於較基板W1更下游側在鉛直方向上隔開間隔地設置。相鄰之整流部81之貫通孔於俯視下相互錯開形成。藉此，可進而於較基板W1更下游側對氣體之流動進行整流。Similar to the rectification part 80, the rectification part 81 may be provided in several numbers. The plurality of rectification parts 81 are provided at intervals in the vertical direction on the downstream side of the substrate W1. The through holes of the adjacent rectifying portions 81 are formed staggered from each other in plan view. Thereby, the flow of the gas can be rectified further downstream than the substrate W1.

再者，於上述例中，雖對基板處理裝置1A設置整流部81，但亦可對基板處理裝置1設置整流部81。In addition, in the above-mentioned example, although the rectification|straightening part 81 is provided in 1 A of substrate processing apparatuses, the rectification|straightening part 81 may be provided in the substrate processing apparatus 1.

第4實施形態. 圖6係概略性地表示基板處理裝置1C之構成之一例之圖。基板處理裝置1C除壓力感測器91及壓力感測器92之有無以外，具有與基板處理裝置1B相同之構成。4th embodiment. FIG. 6 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 1C. The substrate processing apparatus 1C has the same configuration as the substrate processing apparatus 1B except for the presence or absence of the pressure sensor 91 and the pressure sensor 92 .

壓力感測器91設置於內腔室10內。壓力感測器91測定處理空間V1之壓力，並將其測定值輸出至控制部70。壓力感測器91之於處理空間V1內之位置無特別限制，於圖6之例中，壓力感測器91設置於整流部80與基板W1之間之高度位置。又，壓力感測器91設置於俯視下較基板W1更外側。The pressure sensor 91 is arranged in the inner chamber 10 . The pressure sensor 91 measures the pressure of the processing space V1 and outputs the measured value to the control unit 70 . The position of the pressure sensor 91 in the processing space V1 is not particularly limited. In the example of FIG. 6 , the pressure sensor 91 is disposed at a height position between the rectifying portion 80 and the substrate W1 . In addition, the pressure sensor 91 is provided outside the substrate W1 in a plan view.

壓力感測器92設置於內腔室10與外腔室20之間之外側空間V2。壓力感測器92測定外側空間V2之壓力，並將其測定值輸出至控制部70。壓力感測器92之於外側空間V2內之位置亦無特別限制。The pressure sensor 92 is disposed in the outer space V2 between the inner chamber 10 and the outer chamber 20 . The pressure sensor 92 measures the pressure of the outer space V2 and outputs the measured value to the control unit 70 . The position of the pressure sensor 92 in the outer space V2 is also not particularly limited.

控制部70基於自壓力感測器91及壓力感測器92輸入之測定值，以處理空間V1之壓力及外側空間V2之壓力成為既定之壓力範圍內之方式對排氣部50之氣體之排氣流量進行控制。Based on the measured values input from the pressure sensor 91 and the pressure sensor 92, the control unit 70 discharges the gas from the exhaust unit 50 so that the pressure of the processing space V1 and the pressure of the outer space V2 are within a predetermined pressure range. Air flow is controlled.

藉此，可精度良好地控制內腔室10內之處理空間V1之壓力、及內腔室10與外腔室20之間之外側空間V2之壓力。Thereby, the pressure of the processing space V1 in the inner chamber 10 and the pressure of the outer space V2 between the inner chamber 10 and the outer chamber 20 can be precisely controlled.

再者，由於蝕刻氣體自氣體導入部40導入至處理空間V1，故可使處理空間V1之壓力高於外側空間V2之壓力。因此，可抑制氣體自外側空間V2流入處理空間V1。因此，可降低顆粒等異物混入處理空間V1內之可能性。Furthermore, since the etching gas is introduced into the processing space V1 from the gas introduction part 40, the pressure of the processing space V1 can be made higher than the pressure of the outer space V2. Therefore, the gas can be suppressed from flowing into the processing space V1 from the outer space V2. Therefore, it is possible to reduce the possibility of foreign matter such as particles being mixed into the processing space V1.

又，於上述例中，雖對基板處理裝置1B設置壓力感測器91及壓力感測器92，但亦可對基板處理裝置1或基板處理裝置1A設置壓力感測器91及壓力感測器92。In addition, in the above-mentioned example, although the pressure sensor 91 and the pressure sensor 92 are provided in the substrate processing apparatus 1B, the pressure sensor 91 and the pressure sensor may be provided in the substrate processing apparatus 1 or the substrate processing apparatus 1A. 92.

以上，對實施形態進行了說明，但該基板處理裝置1只要不脫離其主旨，則可進行除上述以外之各種變更。本實施形態可於其揭示之範圍內自由組合各實施形態，或改變各實施形態之任意之構成要素，或於各實施形態中省略任意之構成要素。As mentioned above, although embodiment was demonstrated, this substrate processing apparatus 1 can make various changes other than the above, as long as it does not deviate from the summary. In the present embodiment, each embodiment can be freely combined within the scope of its disclosure, or any constituent element of each embodiment can be changed, or any constituent element can be omitted in each embodiment.

1,1A～1C:基板處理裝置 10:腔室(內腔室) 11:上板 12:側壁 12a:第1排氣口(內排氣口) 13:下板 20:外腔室 21:上板 22:側壁 23:下板 23a:第2排氣口(外排氣口) 30:加熱載置部 31:載置台 32:加熱部 33:旋轉機構 40:氣體導入部 41:導入管 41a:導入口(氣體導入口) 42:導入閥 43:氣體供給源 50:排氣部 51:排氣管 52:排氣閥 53:真空泵 60:第1加熱部(加熱部) 61:第2加熱部(加熱部) 70:控制部 80,81:整流部 80a:貫通孔 91:第1壓力感測器(壓力感測器) 92:第2壓力感測器(壓力感測器) V1:處理空間 V2:外側空間 W1:基板1, 1A～1C: Substrate processing equipment 10: Chamber (inner chamber) 11: Upper board 12: Sidewall 12a: 1st exhaust port (internal exhaust port) 13: Lower board 20: Outer chamber 21: Upper board 22: Sidewall 23: Lower board 23a: Second exhaust port (external exhaust port) 30: Heating the mounting part 31: Mounting table 32: Heating part 33: Rotary Mechanism 40: Gas introduction part 41: Introductory tube 41a: inlet (gas inlet) 42: Import valve 43: Gas supply source 50: Exhaust part 51: Exhaust pipe 52: Exhaust valve 53: Vacuum pump 60: 1st heating part (heating part) 61: Second heating part (heating part) 70: Control Department 80,81: Rectification Department 80a: Through hole 91: 1st pressure sensor (pressure sensor) 92: 2nd pressure sensor (pressure sensor) V1: Processing space V2: Outer space W1: substrate

圖1係概略性地表示基板處理裝置之構成之一例之圖。 圖2係概略性地表示內腔室之構成之一例之圖。 圖3係概略性地表示整流部之構成之一例之圖。 圖4係概略性地表示基板處理裝置之構成之一例之圖。 圖5係概略性地表示基板處理裝置之構成之一例之圖。 圖6係概略性地表示基板處理裝置之構成之一例之圖。FIG. 1 is a diagram schematically showing an example of the configuration of a substrate processing apparatus. FIG. 2 is a diagram schematically showing an example of the configuration of the inner chamber. FIG. 3 is a diagram schematically showing an example of the configuration of the rectifying portion. FIG. 4 is a diagram schematically showing an example of the configuration of a substrate processing apparatus. FIG. 5 is a diagram schematically showing an example of the configuration of a substrate processing apparatus. FIG. 6 is a diagram schematically showing an example of the configuration of a substrate processing apparatus.

1:基板處理裝置 1: Substrate processing device

10:腔室(內腔室) 10: Chamber (inner chamber)

11:上板 11: Upper board

12:側壁 12: Sidewall

12a:第1排氣口(內排氣口) 12a: 1st exhaust port (internal exhaust port)

13:下板 13: Lower board

20:外腔室 20: Outer chamber

21:上板 21: Upper board

22:側壁 22: Sidewall

23:下板 23: Lower board

23a:第2排氣口(外排氣口) 23a: Second exhaust port (external exhaust port)

30:加熱載置部 30: Heating the mounting part

31:載置台 31: Mounting table

32:加熱部 32: Heating part

33:旋轉機構 33: Rotary Mechanism

40:氣體導入部 40: Gas introduction part

41:導入管 41: Introductory tube

41a:導入口(氣體導入口) 41a: inlet (gas inlet)

42:導入閥 42: Import valve

43:氣體供給源 43: Gas supply source

50:排氣部 50: Exhaust part

51:排氣管 51: Exhaust pipe

52:排氣閥 52: Exhaust valve

53:真空泵 53: Vacuum pump

60:第1加熱部(加熱部) 60: The first heating part (heating part)

70:控制部 70: Control Department

80:整流部 80: Rectification Department

V1:處理空間 V1: Processing space

V2:外側空間 V2: Outer space

W1:基板 W1: Substrate

Claims (11)

一種基板處理裝置，其係以氣相蝕刻基板之表面者，且具備：腔室；加熱載置部，其於上述腔室內，加熱並載置上述基板；氣體導入部，其具有於上述腔室內設置於與上述基板對向之位置之導入口，自上述導入口向上述腔室內導入蝕刻氣體；排氣部，其經由形成於上述腔室之第1排氣口將上述腔室內之氣體向外部排出；第1加熱部，其安裝於上述腔室；外腔室，其包圍上述腔室；及第2加熱部，其安裝於上述外腔室。 A substrate processing apparatus, which etches the surface of a substrate in a vapor phase, and includes: a chamber; a heating placing part for heating and placing the substrate in the chamber; a gas introduction part having in the chamber an inlet provided at a position facing the substrate, and an etching gas is introduced into the chamber from the inlet; an exhaust part for discharging the gas in the chamber to the outside through a first exhaust port formed in the chamber discharge; a first heating part attached to the chamber; an outer chamber surrounding the chamber; and a second heating part attached to the outer chamber. 如請求項1之基板處理裝置，其中，上述第1加熱部係使上述腔室之內周面之溫度升溫至上述基板之表面之溫度以上。 The substrate processing apparatus according to claim 1, wherein the first heating unit raises the temperature of the inner peripheral surface of the chamber to be equal to or higher than the temperature of the surface of the substrate. 如請求項2之基板處理裝置，其中，上述第1加熱部係對上述腔室進行加熱，使上述腔室之內周面之溫度升溫至較上述基板之表面之溫度高30度以上之值。 The substrate processing apparatus of claim 2, wherein the first heating unit heats the chamber to raise the temperature of the inner peripheral surface of the chamber to a value 30 degrees or more higher than the temperature of the surface of the substrate. 如請求項1至3中任一項之基板處理裝置，其中，上述加熱載置部係使上述基板之溫度升溫至50度以上且200度以下，上述第1加熱部係使上述腔室之內周面之溫度升溫至80度以上且230度以下。 The substrate processing apparatus according to any one of Claims 1 to 3, wherein the heating mounting part raises the temperature of the substrate to 50 degrees or more and 200 degrees or less, and the first heating part heats the inside of the chamber The temperature of the peripheral surface is raised to 80 degrees or more and 230 degrees or less. 如請求項1至3中任一項之基板處理裝置，其中，上述第1加熱部係安裝於上述腔室之側壁中至少於水平方向上與上述基板對向之區域。 The substrate processing apparatus according to any one of claims 1 to 3, wherein the first heating part is mounted on a side wall of the chamber at least in an area facing the substrate in the horizontal direction. 如請求項1至3中任一項之基板處理裝置，其中，上述腔室之上述第1排氣口係將上述腔室之內部空間、及上述腔室與上述外腔室之間之外側空間相互連接，於上述外腔室形成第2排氣口，上述排氣部係經由上述第2排氣口將上述外腔室內之氣體向外部排出。 The substrate processing apparatus according to any one of claims 1 to 3, wherein the first exhaust port of the chamber connects the inner space of the chamber and the outer space between the chamber and the outer chamber Connected to each other, a second exhaust port is formed in the outer chamber, and the exhaust portion exhausts the gas in the outer chamber to the outside through the second exhaust port. 如請求項6之基板處理裝置，上述第2加熱部係使上述外腔室之內周面之溫度升溫至上述腔室之內周面之溫度以上。 The substrate processing apparatus according to claim 6, wherein the second heating unit raises the temperature of the inner peripheral surface of the outer chamber to be equal to or higher than the temperature of the inner peripheral surface of the chamber. 如請求項6之基板處理裝置，其中，上述第2加熱部係使上述外腔室之內周面之溫度升溫至100度以上。 The substrate processing apparatus according to claim 6, wherein the second heating unit raises the temperature of the inner peripheral surface of the outer chamber to 100 degrees or more. 如請求項6之基板處理裝置，其具備：第1壓力感測器，其設置於上述腔室內；第2壓力感測器，其設置於上述腔室與上述外腔室之間；及控制部，其基於上述第1壓力感測器及上述第2壓力感測器之測定值，控制上述排氣部之排氣流量。 The substrate processing apparatus according to claim 6, comprising: a first pressure sensor provided in the chamber; a second pressure sensor provided between the chamber and the outer chamber; and a control unit , which controls the exhaust flow rate of the exhaust portion based on the measured values of the first pressure sensor and the second pressure sensor. 如請求項1至3中任一項之基板處理裝置，其進而具備：整流部，其設置於上述導入口與上述基板之間，對自上述導入口導入之上述蝕刻氣體進行整流。 The substrate processing apparatus according to any one of Claims 1 to 3, further comprising: a rectification unit provided between the introduction port and the substrate to rectify the etching gas introduced from the introduction port. 如請求項1至3中任一項之基板處理裝置，其中，上述第1排氣口設置有數個，該數個第1排氣口係於上述基板之圓周方向上大致等間隔地形成。 The substrate processing apparatus according to any one of claims 1 to 3, wherein a plurality of the first exhaust ports are provided, and the plurality of first exhaust ports are formed at substantially equal intervals in the circumferential direction of the substrate.
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