TWI751450B - Substrate processing device and substrate processing method - Google Patents
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Abstract
本發明提供一種適合於多片基板的同時處理和多片基板 的個別處理這兩種處理的基板處理裝置和基板處理方法。基板處理裝置包括上游處理部、下游處理部、第一待機部、第二待機部以及搬送機器人。上游處理部對多片基板逐片依次進行處理。下游處理部可對通過上游處理部進行了處理的兩片基板同時進行處理。第一待機部使作為被上游處理部處理過的基板的第一基板待機。第二待機部使作為被上游處理部處理過的基板的、且為第一基板的下一基板的第二基板待機。搬送機器人可取出第一基板與第二基板兩者、僅第一基板、和僅第二基板的任一種作為搬送對象,且可將所述搬送對象搬送至下游處理部。 The present invention provides a method suitable for simultaneous processing of multiple substrates and multiple substrates A substrate processing apparatus and a substrate processing method for the individual processing of these two types of processing. The substrate processing apparatus includes an upstream processing unit, a downstream processing unit, a first standby unit, a second standby unit, and a transfer robot. The upstream processing unit sequentially processes the plurality of substrates one by one. The downstream processing unit can simultaneously process two substrates processed by the upstream processing unit. The first standby unit waits for the first substrate, which is the substrate processed by the upstream processing unit. The second standby unit waits for the second substrate that is the substrate processed by the upstream processing unit and is the next substrate to the first substrate. The transfer robot can take out either of the first substrate and the second substrate, only the first substrate, and only the second substrate as a transfer object, and can transfer the transfer object to the downstream processing unit.
Description
本發明是有關於一種基板處理裝置和基板處理方法。 The present invention relates to a substrate processing apparatus and a substrate processing method.
已知曉具有多個處理裝置的塗布機/顯影機(coater/developer)裝置。例如,在專利文獻1記載的塗布機/顯影機裝置中,自載置於分度器(indexer)部的匣盒(cassette)中取出的多片基板依次被投入清洗裝置中,然後,按順序經由脫水烘烤裝置、抗蝕劑塗布裝置、預烘烤裝置、曝光裝置、顯影裝置和後烘烤裝置,並再次被收容至匣盒中。
Coater/developer apparatuses with multiple processing apparatuses are known. For example, in the coater/developer device described in
所述塗布機/顯影機裝置中混合存在以下兩種類型的處理裝置。即,混合存在平流處理裝置與可變搬送型的處理裝置。在所述平流處理裝置中,基板是逐片地搬入。平流處理裝置沿一個方向依次搬送所述基板並對基板逐片進行處理。所述平流處理裝置例示有清洗裝置和顯影裝置。 The following two types of processing devices are mixed in the coater/developer device. That is, the advection processing apparatus and the variable conveyance type processing apparatus are mixed. In the above-mentioned flat-flow processing apparatus, the substrates are loaded one by one. The horizontal processing device sequentially transports the substrates in one direction and processes the substrates one by one. The flat flow processing device is exemplified by a cleaning device and a developing device.
在可變搬送型的處理裝置中,基板也是逐片地搬入。可變搬送型的處理裝置具有:多個處理部、以及對所述多個處理部搬送基板的基板搬送部件。基板搬送部件具有:接收基板的手(hand)、以及使所述手向各處理部移動的移動機構。所述基板搬送部件自上游側的裝置逐片接收基板並將基板傳遞至處理部。另外,基板搬送部件還可在處理部的相互之間搬送基板。所述可變搬送型的處 理裝置例如例示有脫水烘烤裝置。在所述脫水烘烤裝置中設置有加熱部和冷卻部作為多個處理部。 In the variable-feed type processing apparatus, the substrates are also loaded one by one. A variable conveyance type processing apparatus includes a plurality of processing units, and a substrate conveyance member that conveys a substrate to the plurality of processing units. The substrate conveyance means includes a hand for receiving the substrate, and a moving mechanism for moving the hand to each processing unit. The substrate conveying means receives substrates one by one from an upstream device and transfers the substrates to the processing unit. In addition, the substrate conveying means may also convey the substrates between the processing units. The variable transport type As a processing apparatus, a dehydration baking apparatus is illustrated, for example. In the dehydration and baking apparatus, a heating part and a cooling part are provided as a plurality of processing parts.
[現有技術文獻] [Prior Art Literature]
[專利文獻] [Patent Literature]
[專利文獻1]日本專利特開2015-156426號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2015-156426
然而,在此種可變搬送型的處理裝置的各處理部中,例如自上游側的平流裝置逐片地搬送基板,且各處理部對基板逐片進行處理。因此,存在基板處理的生產率(throughput)低這一問題。 However, in each processing section of such a variable conveyance type processing apparatus, for example, the substrates are transported one by one from an upstream side flow device, and each processing section processes the substrates one by one. Therefore, there is a problem that the throughput of the substrate processing is low.
因此,考慮使可變搬送型的處理裝置的各處理部對多片基板同時進行處理。由此可提高基板處理的生產率。 Therefore, it is considered that each processing unit of a variable conveyance type processing apparatus simultaneously processes a plurality of substrates. Thereby, the productivity of the substrate processing can be improved.
然而,可變搬送型的處理裝置的各處理部總是對多片基板同時進行處理的情況不一定理想,也有理想的是各處理部對一片基板進行處理的情況。以下簡單進行說明。 However, it is not always ideal that each processing unit of a variable conveyance type processing apparatus processes a plurality of substrates at the same time, and it is also desirable that each processing unit processes one substrate. The following is a brief description.
例如,在平流處理裝置中,在先行的基板(以下稱為先行基板)的處理結束之後,對繼所述先行基板之後流入的基板(以下稱為後續基板)進行處理。因此,先行基板需要等待後續基板的處理結束,在所述先行基板的待機期間,先行基板的狀態可能會隨時間變化。因此,在後續基板的處理結束時的時間點,先行基板和後續基板的狀態可相互不同。當如上所述先行基板和後續基板的狀態的差異變大時,等待平流處理裝置中的後續基板的處理結束的 情況並不優選。因此,理想的是將先行基板和後續基板依次搬送至下游側的可變搬送型的處理裝置的各處理部中,並對先行基板和後續基板逐片個別地進行處理。由此,可對狀態上無差異的基板進行處理。 For example, in an advection processing apparatus, after the processing of a preceding substrate (hereinafter referred to as a preceding substrate) is completed, a substrate (hereinafter referred to as a succeeding substrate) flowing in after the preceding substrate is processed. Therefore, the preceding substrate needs to wait for the processing of the succeeding substrate to be completed, and during the standby period of the preceding substrate, the state of the preceding substrate may change with time. Therefore, the states of the preceding substrate and the succeeding substrate may be different from each other at a point in time when the processing of the succeeding substrate ends. When the difference between the states of the preceding substrate and the succeeding substrate becomes large as described above, the process of waiting for the end of the processing of the succeeding substrate in the advection processing apparatus The situation is not preferred. Therefore, it is desirable to sequentially transfer the preceding substrate and the succeeding substrate to each processing section of the downstream variable transfer type processing apparatus, and to individually process the preceding substrate and the succeeding substrate one by one. As a result, substrates with no difference in state can be processed.
另一方面,若所述差異小,則理想的是下游側的可變搬送型的處理裝置的各處理部對先行基板和後續基板同時進行處理。由此,可提高生產率。 On the other hand, if the difference is small, it is desirable that each processing unit of the downstream variable conveyance type processing apparatus simultaneously processes the preceding substrate and the succeeding substrate. Thereby, productivity can be improved.
然而,以前並未考慮此種處理方法的不同,並且未提出適合於此兩種處理方法的基板處理裝置。 However, the difference in such processing methods has not been considered before, and a substrate processing apparatus suitable for these two processing methods has not been proposed.
因此,本發明是鑒於所述課題而成的,其目的在於提供一種適合於多片基板的同時處理和多片基板的個別處理這兩種處理的基板處理裝置和基板處理方法。 Therefore, the present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus and a substrate processing method suitable for both simultaneous processing of a plurality of substrates and individual processing of a plurality of substrates.
基板處理裝置的第一形態包括:上游處理部,對多片基板逐片依次進行處理;下游處理部,能夠對通過所述上游處理部進行了處理的兩片基板同時進行處理;第一待機部,使作為被所述上游處理部處理過的基板的第一基板待機;第二待機部,使作為被所述上游處理部處理過的基板的、且為所述第一基板的下一基板的第二基板待機;以及搬送機器人,能夠取出在所述第一待機部待機的所述第一基板與在所述第二待機部待機的所述第二基板兩者、在所述第一待機部待機的僅所述第一基板、和在所述第二待機部待機的僅所述第二基板的任一種作為搬送對象,且能夠將所述搬送 對象搬送至所述下游處理部。 The first aspect of the substrate processing apparatus includes: an upstream processing unit for sequentially processing a plurality of substrates one by one; a downstream processing unit capable of simultaneously processing two substrates processed by the upstream processing unit; and a first standby unit , the first substrate that is the substrate processed by the upstream processing unit is put on standby; the second standby unit is the substrate processed by the upstream processing unit that is the next substrate to the first substrate. a second substrate waiting; and a transfer robot capable of taking out both the first substrate waiting at the first waiting unit and the second substrate waiting at the second waiting unit, Either only the first substrate on standby, and only the second substrate on standby in the second standby unit is a transfer object, and the transfer can be performed The object is conveyed to the downstream processing unit.
基板處理裝置的第二形態是第一形態的基板處理裝置,其中所述第一待機部具有使所述第一基板上升的第一上升機構,所述第二待機部具有使所述第二基板上升的第二上升機構,所述第一上升機構和所述第二上升機構相互獨立地受到驅動。 A second aspect of the substrate processing apparatus is the substrate processing apparatus of the first aspect, wherein the first standby part has a first elevating mechanism for elevating the first substrate, and the second standby part has a first elevating mechanism for elevating the second substrate As for the second ascending mechanism that ascends, the first ascending mechanism and the second ascending mechanism are driven independently of each other.
基板處理裝置的第三形態是第二形態的基板處理裝置,其中所述上游處理部具有沿著搬送方向逐片依次搬送所述多片基板的搬送部,所述第一待機部在所述搬送方向上位於所述搬送部的下游側,所述第二待機部在所述搬送方向上位於所述搬送部與所述第一待機部之間,也具有將來自所述搬送部的所述第一基板搬送至所述第一待機部的功能,當所述第一基板自所述第二待機部被搬送至所述第一待機部時,所述第一上升機構使所述第一基板上升,在第一上升機構使所述第一基板上升的狀態下,所述第二基板自所述搬送部被搬送至所述第二待機部。 A third aspect of the substrate processing apparatus is the substrate processing apparatus of the second aspect, wherein the upstream processing unit has a conveying unit that sequentially conveys the plurality of substrates one by one along the conveying direction, and the first standby unit is in the conveying direction. The second standby part is located on the downstream side of the conveying part in the conveying direction, and the second standby part is located between the conveying part and the first standby part in the conveying direction, and also has the A function of conveying a substrate to the first standby part, the first raising mechanism raises the first substrate when the first substrate is conveyed from the second standby part to the first standby part and the second substrate is conveyed from the conveying unit to the second standby unit in a state where the first raising mechanism raises the first substrate.
基板處理裝置的第四形態是第一形態至第三形態中任一形態的基板處理裝置,其中所述下游處理部具有進行乾燥處理的多個乾燥部,當所述第一基板和所述第二基板各自的乾燥所需要的必要乾燥時間為第一時間時,所述搬送機器人將所述第一基板搬送至所述多個乾燥部中的一個乾燥部,將所述第二基板搬送至所述多個乾燥部中的另一個乾燥部,當所述必要乾燥時間為比所述第一時間長的第二時間時,所述搬送機器人接收所述第一基板和所述第二基板兩者並整批搬送至所述多個乾燥部中的一個乾燥 部。 The fourth aspect of the substrate processing apparatus is the substrate processing apparatus of any one of the first aspect to the third aspect, wherein the downstream processing section has a plurality of drying sections for performing drying processing, and when the first substrate and the first substrate are When the necessary drying time required for drying each of the two substrates is the first time, the transfer robot transfers the first substrate to one drying unit among the plurality of drying units, and transfers the second substrate to the drying unit. and the transfer robot receives both the first substrate and the second substrate when the necessary drying time is a second time longer than the first time in another drying part among the plurality of drying parts And the whole batch is transported to one of the plurality of drying sections for drying Department.
基板處理方法的形態包括:第一步驟,逐片依次處理多片基板;第二步驟,使作為在所述第一步驟中進行了處理的基板的第一基板待機;第三步驟,使作為在所述第一步驟中進行了處理的基板的、且為所述第一基板的下一基板的第二基板待機;第四步驟,通過搬送機器人取出搬送對象,所述搬送機器人能夠取出所述第一基板與所述第二基板兩者、僅所述第一基板、和僅第二基板的任一種作為所述搬送對象;以及第五步驟,通過所述搬送機器人,將所述搬送對象搬送至能夠同時處理兩片基板的下游處理部。 The form of the substrate processing method includes: a first step of sequentially processing a plurality of substrates one by one; a second step of making a first substrate that is a substrate processed in the first step stand by; and a third step of making The second substrate of the substrate processed in the first step and the substrate next to the first substrate is on standby; in the fourth step, the transfer object is taken out by a transfer robot, and the transfer robot can take out the first substrate. Either one of a substrate and the second substrate, only the first substrate, and only the second substrate is used as the transfer object; and in a fifth step, the transfer robot is used to transfer the transfer object to a A downstream processing unit capable of processing two substrates simultaneously.
根據基板處理裝置的第一形態和基板處理方法的形態,搬送機器人既可將第一基板和第二基板兩者整批搬送至下游處理部,另外也可將第一基板和第二基板個別地搬送至下游處理部。若將第一基板和第二基板兩者整批搬送至下游處理部,則下游處理裝置對第一基板和第二基板兩者同時進行處理。由此,可提高生產率。另一方面,若將第一基板和第二基板個別地搬送至下游處理部,則下游處理部對第一基板和第二基板個別地進行處理。由此,下游處理部可以分別適合於第一基板和第二基板的處理條件,對第一基板和第二基板進行處理。 According to the first aspect of the substrate processing apparatus and the aspect of the substrate processing method, the transfer robot may transfer both the first substrate and the second substrate in a batch to the downstream processing unit, or the first substrate and the second substrate may be individually transferred. conveyed to the downstream processing unit. When both the first substrate and the second substrate are transported to the downstream processing unit in a batch, the downstream processing apparatus simultaneously processes both the first substrate and the second substrate. Thereby, productivity can be improved. On the other hand, when the first substrate and the second substrate are individually conveyed to the downstream processing unit, the downstream processing unit processes the first substrate and the second substrate individually. Accordingly, the downstream processing unit can process the first substrate and the second substrate in accordance with the processing conditions of the first substrate and the second substrate, respectively.
根據基板處理裝置的第二形態,第一上升機構和第二上升機構相互獨立地受到驅動,因此既可僅使第一基板上升,也可僅使第二基板上升,還可使第一基板和第二基板兩者上升。 According to the second aspect of the substrate processing apparatus, since the first lifting mechanism and the second lifting mechanism are driven independently of each other, only the first substrate may be lifted, only the second substrate may be lifted, or the first substrate and the second substrate may be lifted. Both the second substrates are raised.
根據基板處理裝置的第三形態,可使第一基板在更早的時刻上升。由此,可使第一基板自搬送部分離地對第一基板進行支撐。由此,可減少在搬送部與基板之間移動的熱量。由此,可減少第一基板與第二基板的溫度狀態的差。 According to the third aspect of the substrate processing apparatus, the first substrate can be raised at an earlier time. Thereby, the 1st board|substrate can be supported by the 1st board|substrate separately from a conveyance part. Thereby, the heat which moves between a conveyance part and a board|substrate can be reduced. Thereby, the difference of the temperature state of a 1st board|substrate and a 2nd board|substrate can be reduced.
根據基板處理裝置的第四形態,上游處理部對第一基板和第二基板逐片依次進行處理,因此所述處理的結束時刻在第一基板與第二基板之間不同。具體來說,第一基板的結束時刻是比第二基板的結束時刻早的時刻。由此,對第一基板和第二基板進行的處理結束之後的第一基板的乾燥狀態與第二基板的乾燥狀態不同。 According to the fourth aspect of the substrate processing apparatus, since the upstream processing unit sequentially processes the first substrate and the second substrate sheet by sheet, the end timing of the processing differs between the first substrate and the second substrate. Specifically, the end time of the first substrate is earlier than the end time of the second substrate. As a result, the drying state of the first substrate after the treatment of the first substrate and the second substrate is completed is different from the drying state of the second substrate.
當必要乾燥時間較短時,第一基板和第二基板均容易乾燥,由處理的結束時刻的差所引起的乾燥程度差相對較大。在所述情況下,搬送機器人將第一基板和第二基板分別搬送至不同的乾燥部。由此,可以分別適合於第一基板和第二基板的乾燥時間進行乾燥處理。 When the necessary drying time is short, both the first substrate and the second substrate are easily dried, and the difference in the degree of drying caused by the difference in the end time of the treatment is relatively large. In this case, the transfer robot transfers the first substrate and the second substrate to different drying units, respectively. Thereby, the drying process can be performed according to the drying time of the 1st board|substrate and the 2nd board|substrate, respectively.
另一方面,當必要乾燥時間長時,第一基板和第二基板均難以乾燥,由處理的結束時刻的差所引起的乾燥程度差相對較小。在所述情況下,搬送機器人將第一基板和第二基板整批搬送至一個乾燥部。由此,可提高乾燥所需要的產生率。 On the other hand, when the necessary drying time is long, it is difficult to dry both the first substrate and the second substrate, and the difference in the degree of drying caused by the difference in the end timing of the treatment is relatively small. In this case, the transfer robot transfers the first substrate and the second substrate in a batch to one drying section. Thereby, the generation rate required for drying can be improved.
1:基板處理裝置 1: Substrate processing device
2、2A:塗布裝置 2. 2A: Coating device
3:減壓乾燥裝置 3: Decompression drying device
4、72:搬送機器人 4. 72: Transfer robot
5:交接單元 5: handover unit
6:控制部 6: Control Department
7:加熱處理裝置 7: Heat treatment device
21:基板導入部 21: Substrate introduction part
22:處理裝置本體 22: Processing device body
23:基板待機部 23: Board Standby Section
31、31a~31c:乾燥部 31, 31a~31c: drying section
41:手 41: Hands
42:移動機構 42: Moving Mechanisms
43:旋轉機構 43: Rotary Mechanism
44:升降機構 44: Lifting mechanism
61:CPU 61:CPU
62:ROM 62:ROM
63:RAM 63: RAM
64:儲存裝置 64: Storage Device
65:總線 65: bus
66:輸入部 66: Input part
67:顯示部 67: Display part
68:通信部 68: Department of Communications
71:加熱單元 71: Heating unit
211A、211B、236A、236B:旋轉軸 211A, 211B, 236A, 236B: Rotary shaft
212A、212B、237A、237B、2211:輥子 212A, 212B, 237A, 237B, 2211: Rollers
221:移載單元 221: Transfer unit
222:上浮平台 222: Floating Platform
223:基板搬送部 223: Substrate conveying section
224:噴嘴 224: Nozzle
225、233:出口上浮平台 225, 233: Export floating platform
231:第一待機部 231: First Standby Department
232:第二待機部 232: Second Standby Department
234:第一上升機構 234: First Ascension Mechanism
235:第二上升機構 235: Second Ascent Mechanism
411:指狀構件 411: Fingers
412:基端構件 412: Base end member
2212:入口上浮平台 2212: Entrance floating platform
2213、2341、2351:頂銷 2213, 2341, 2351: ejector pins
2214、2342、2352:升降機構 2214, 2342, 2352: Lifting mechanism
2231:基板吸盤部 2231: Substrate suction cup part
2232:進退機構 2232: Advance and retreat mechanism
R1:塗布區域 R1: Coating area
S1、S2、S3:步驟 S1, S2, S3: Steps
T1:必要乾燥時間 T1: Necessary drying time
Tref:基準時間 Tref: base time
W:基板 W: substrate
W1:第一基板 W1: the first substrate
W2:第二基板 W2: Second substrate
X、Y、Z:軸 X, Y, Z: axis
圖1是概略性地表示基板處理裝置的構成的一例的平面圖。 FIG. 1 is a plan view schematically showing an example of the configuration of a substrate processing apparatus.
圖2是概略性地表示控制部的構成的一例的功能框圖。 FIG. 2 is a functional block diagram schematically showing an example of the configuration of a control unit.
圖3是概略性地表示塗布裝置和搬送機器人的構成的一例的側視圖。 3 is a side view schematically showing an example of the configuration of a coating apparatus and a transfer robot.
圖4是表示控制部的動作的一例的流程圖。 FIG. 4 is a flowchart showing an example of the operation of the control unit.
圖5是概略性地表示塗布裝置的構成的一例的側視圖。 FIG. 5 is a side view schematically showing an example of the configuration of a coating apparatus.
第一實施形態. first embodiment.
<1.基板處理裝置的全體構成、全體動作的概要的一例> <1. An example of the overall configuration of the substrate processing apparatus and an overview of the overall operation>
圖1是概略性地表示基板處理裝置1的構成的一例的平面圖。此外,在以下參照的各圖中,為了容易理解,視需要對各部的尺寸或數量進行誇張或簡化描繪。另外,在各圖中,為了說明各構成的位置關係,適宜地示出XYZ正交坐標系。此處,Z軸以沿著鉛垂方向的姿勢配置,X軸和Y軸沿著水平面配置。以下,將X軸方向上的其中一側也稱為+X側,將另一側也稱為-X側。Y軸和Z軸也相同。此外,以下,+Z側是指鉛垂上側。
FIG. 1 is a plan view schematically showing an example of the configuration of a
基板處理裝置1包括塗布裝置2、減壓乾燥裝置3、搬送機器人4以及控制部6。在塗布裝置2中,自上游側搬入有基板W。此外,基板W在搬入塗布裝置2之前可適宜地進行清洗處理等處理。塗布裝置2在沿著搬送方向逐片依次搬送多片基板W的同時,對基板W逐片進行塗布處理。由此,在基板W的上表面形成塗膜。作為塗布於基板W的塗布液,例如可採用光致抗蝕劑用的塗布液或絕緣膜用的塗布液。
The
減壓乾燥裝置3設置於塗布裝置2的下游側,且包括多
個乾燥部31。多個乾燥部31中的各乾燥部31可接納通過塗布裝置2進行了處理的N(N為2以上的整數)片基板W。以下,作為一例,對作為N片基板W而採用了兩片基板的情況進行敘述。乾燥部31對所搬入的基板W進行減壓乾燥處理。即,當在乾燥部31中搬入有兩片基板W時,乾燥部31對兩片基板W同時進行減壓乾燥處理。另外,當在乾燥部31中搬入有一片基板W時,乾燥部31對所述一片基板W進行減壓乾燥處理。通過所述減壓乾燥處理,基板W的塗膜在一定程度上乾燥。此外,乾燥部31中的兩片基板的處理期間無需完全一致,只要各處理期間的至少一部分重合即可。總之,此處所說的同時,是以與各處理期間完全不重合的狀態相對的含義來使用。
The reduced-
搬送機器人4可將通過塗布裝置2進行了處理的兩片基板W整批取出來作為搬送對象,並將所述搬送對象整批向乾燥部31搬送。以下,作為一例,對作為N片基板W而採用了兩片基板的情況進行敘述。
The
另外,搬送機器人4也可將通過塗布裝置2進行了處理的基板W逐片取出來作為搬送對象,並將各基板W依次搬送至相互不同的乾燥部31。如之後所進行的詳細敘述,搬送機器人4所搬送的基板W的片數根據塗布裝置2的處理內容(具體來說為塗布液的種類)而變更。
In addition, the
搬送機器人4將通過減壓乾燥裝置3進行了處理的基板W搬送至交接單元5。交接單元5設置於乾燥部31的上方,可接
納兩片基板W。若在乾燥部31中對兩片基板W同時進行處理,則搬送機器人4自乾燥部31取出所述兩片基板W,並將所述兩片基板W整批搬送至交接單元5。另一方面,若在乾燥部31中對一片基板W進行處理,則搬送機器人4取出所述一片基板W,並將所述一片基板W搬送至交接單元5。進而,搬送機器人4取出通過另一乾燥部31進行了處理的一片基板W,並將所述一片基板W搬送至交接單元5。由此,在交接單元5中搬入有兩片基板W。
The
搬入至交接單元5內的兩片基板W被設置於所述交接單元5的下游側的搬送機器人72整批取出,並搬送至位於下游側的加熱處理裝置7的加熱單元71。加熱單元71對兩片基板W同時進行加熱處理。由此,兩片基板W的塗膜大致完全乾燥。
The two substrates W carried into the
控制部6控制各處理裝置中的處理和基板W的搬送。圖2是概略性地表示控制部6的構成的一例的功能框圖。控制部6是控制電路,如圖2所示,例如包括將中央處理器(Central Processing Unit,CPU)61、唯讀記憶體(Read Only Memory,ROM)62、隨機存取記憶體(Random Access Memory,RAM)63和儲存裝置64等經由總線(bus line)65相互連接而成的一般的計算機。ROM 62保存基本程序等,RAM 63被提供作為供CPU 61進行規定處理時的操作區域。儲存裝置64包括快閃記憶體、或硬碟裝置等非易失性的儲存裝置。
The
另外,在控制部6中,輸入部66、顯示部67、通信部68也連接於總線65。輸入部66包括各種開關、或觸摸屏等,且從操
作員收到處理配方(recipe)等各種輸入設定指示。顯示部67包括液晶顯示裝置和燈等,基於利用CPU 61的控制來顯示各種信息。通信部68具有經由區域網路(Local Area Network,LAN)等的數據通信功能。
In addition, in the
另外,在控制部6上連接有各機器人(搬送機器人4、搬送機器人72等)和所述各處理裝置作為控制對象。即,控制部6可作為對基板W的搬送進行控制的搬送控制部發揮功能。
In addition, each robot (the
控制部6的功能可通過CPU 61執行ROM 62或儲存裝置64中所保存的程序來實現。即,控制部6的功能可通過軟體來實現。或者,控制部6的功能的一部分或全部也可通過包括專用的邏輯電路等的硬體來實現。
The function of the
<1-1.塗布裝置> <1-1. Coating device>
塗布裝置2包括基板導入部21、處理裝置本體22以及基板待機部23。基板導入部21接收基板W。例如在基板導入部21中整批搬入有兩片基板W。處理裝置本體22依次接收自基板導入部21搬送的基板W,並沿著搬送方向搬送所述基板W。此處,處理裝置本體22中的搬送方向為X軸方向,所述搬送方向的上游側為-X側,搬送方向的下游側為+X側。此外,塗布裝置2是位於減壓乾燥裝置3的上游側(-X側)的上游處理部。
The
處理裝置本體22在將基板W依次向+X側搬送的同時,對所述基板W逐片依次進行塗布處理。塗布處理後的基板W自處理裝置本體22被依次搬送至基板待機部23。基板待機部23依
次接收自處理裝置本體22搬送的基板W。基板待機部23可使依次接收的兩片基板W待機。此外,此處所說的“待機”,是指與基板W的待機時間的長短無關地在此位置停止。在基板待機部23待機的基板W被搬送機器人4取出,並被搬送至下游側的減壓乾燥裝置3。
The processing apparatus
<1-1-1.基板導入部> <1-1-1. Board introduction part>
圖3是概略性地表示塗布裝置2和搬送機器人4的構成的一例的側視圖。在圖3的例子中,基板導入部21例如包括輥子輸送機(coro conveyer)。所述輥子輸送機包括多個旋轉軸211A、多個旋轉軸211B、多個輥子212A以及多個輥子212B。旋轉軸211A和旋轉軸211B分別以各自的中心軸沿著Y軸的姿態設置。多個旋轉軸211A在X軸方向上隔開間隔排列,多個旋轉軸211B在比多個旋轉軸211A更靠下游側處,在X軸方向上隔開間隔排列。另外,旋轉軸211A和旋轉軸211B設置於相互大致相同的高度位置。旋轉軸211A和旋轉軸211B分別可將自身的中心軸作為旋轉軸來旋轉。
FIG. 3 is a side view schematically showing an example of the configuration of the
在各旋轉軸211A的外周面設置有多個輥子212A,在各旋轉軸211B的外周面設置有多個輥子211B。輥子212A和輥子212B具有圓環狀的形狀,且以其中心軸沿著Y軸的姿勢設置。
A plurality of
基板W被載置於多個輥子212A和多個輥子212B上。即,多個輥子212A的外周面的最上部與基板W的下表面接觸,多個輥子212B的外周面的最上部與基板W的下表面接觸。
The substrate W is placed on the plurality of
多個旋轉軸211A由驅動部(未圖示)驅動,沿預定的相同方向以大致相等的旋轉速度旋轉(同步旋轉)。通過所述旋轉,多個輥子212A也沿相同方向以大致相等的旋轉速度旋轉。驅動部具有馬達,並由控制部6控制。通過輥子212A的旋轉,輥子212A上所載置的基板W被搬送至+X側。多個旋轉軸211B也由驅動部(未圖示)驅動而進行同步旋轉。由此,輥子212B上所載置的基板W被搬送至+X側。旋轉軸211A和旋轉軸211B相互獨立地受到控制。
The plurality of
也可在輥子212A和輥子212B上分別各載置一片基板W。例如,兩片基板W可自上游側的裝置被分別載置於輥子212A和輥子212B上。在所述狀態下,控制部6僅使旋轉軸211B同步旋轉。由此,可將輥子212B上的基板W搬送至處理裝置本體22。接著,控制部6使旋轉軸211A和旋轉軸211B兩者同步旋轉。由此,可將輥子212A上的基板W搬送至處理裝置本體22。
One sheet of the substrate W may be placed on each of the
<1-1-2.處理裝置本體的概要> <1-1-2. Outline of the processing device body>
處理裝置本體22在依次搬送基板W的同時,對所述基板W依次進行塗布處理。在圖1和圖3的例子中,所述處理裝置本體22包括移載單元221、上浮平台222、基板搬送部223以及噴嘴224。
The processing apparatus
移載單元221是將自基板導入部21搬送的基板W搬送至上浮平台222的單元,且是轉換搬送方式的單元。即,在基板導入部21中,是以輥子搬送方式搬送基板W,與此相對,後述的上
浮平台22以上浮搬送方式搬送基板W,因此移載單元221在它們之間轉換搬送方式。
The
在上浮平台222的上表面設置有多個噴出口,自所述噴出口噴出氣體。由此,在上浮平台222中,基板W通過所述氣體而被賦予浮力。
A plurality of ejection ports are provided on the upper surface of the floating
基板搬送部223在保持基板W的Y軸方向的兩端部分的同時,將所述基板W自移載單元221經由上浮平台222搬送至基板待機部23。由於基板搬送部223僅保持了基板W的兩端部分,因此基板W可在其中央附近撓曲。然而,上浮平台222自噴出口向基板W的下表面噴出氣體,從而對基板W賦予浮力。由此,可抑制基板W的撓曲。因此,基板W可以水平姿勢通過上浮平台222。
The
噴嘴224設置於上浮平台222的上方空間。基板搬送部223使基板W在上浮平台222的上方移動至+X側,由此基板W橫穿過噴嘴224的正下方。噴嘴224對其正下方的基板W塗布塗布液。由此,可對基板W形成塗膜。此外,噴嘴224也可構成為能夠在處理位置與待機位置之間移動。處理位置是噴嘴224對基板W噴出塗布液的位置,待機位置是使噴嘴224待機的位置。在待機位置,可設置有清洗噴嘴224的噴口的機構等。
The
形成有塗膜的基板W利用基板搬送部223而被搬送至基板待機部23。基板搬送部223在基板待機部23中解除對基板W的保持。然後,基板搬送部223再次返回至移載單元221,以保持
下一基板W。
The substrate W on which the coating film is formed is conveyed to the
<1-1-2-1.移載單元> <1-1-2-1. Transfer unit>
在圖3的例子中,移載單元221包括多個輥子2211、入口上浮平台2212以及多個頂銷2213。多個輥子2211具有與基板導入部21的輥子相同的構成,且在X軸方向上隔開間隔排列。輥子2211的旋轉由控制部6控制。輥子2211通過自身的旋轉,接收自基板導入部21搬送的基板W並將所述基板W搬送至+X側。
In the example of FIG. 3 , the
入口上浮平台2212設置於比多個輥子2211更靠下游側(+X側)處。在入口上浮平台2212的上表面形成有多個噴出口(未圖示)。所述噴出口在俯視時(即沿著Z軸方向觀察)例如排列成矩陣狀。各噴出口經由形成於入口上浮平台2212的內部的氣體供給路徑而與氣體供給源(未圖示)連接。來自氣體供給源的氣體自所述噴出口噴出。由此,可對入口上浮平台2212上的基板W賦予浮力。
The
多個頂銷2213具有沿著Z軸方向延伸存在的棒狀的形狀,且以可升降的方式設置。多個頂銷2213中的一些頂銷2213與輥子2211對應地設置,其餘的頂銷2213與入口上浮平台2212對應地設置。與輥子2211相對應的頂銷2213設置於多個輥子2211之間的間隙。在入口上浮平台2212,以與多個噴出口中的任一個均不發生干擾的方式形成有多個貫通孔。所述貫通孔沿Z軸方向貫通入口上浮平台2212。其餘的頂銷2213分別貫通配置於所述貫通孔中。如圖3所例示,多個頂銷2213可在-Z側的基端部相互連
結。
The plurality of
頂銷2213利用升降機構2214進行升降。升降機構2214例如為氣缸,且由控制部6控制。
The
在頂銷2213下降的狀態下,頂銷2213的+Z側的前端部相對於輥子2211的外周面的最上部和入口上浮平台2212的上表面的任一者而位於-Z側。在頂銷2213上升的狀態下,所述前端部位於比輥子2211的最上部和入口上浮平台2212的上表面的任一者更靠+Z側處,且可與基板W的下表面接觸而將基板W頂起。基板W在被頂銷2213頂起的狀態下由基板搬送部223予以保持。
In the state where the
<1-1-2-2.上浮平台> <1-1-2-2. Floating platform>
上浮平台222設置於比入口上浮平台2212更靠+X側處。在上浮平台222的上表面也形成有多個噴出口(未圖示)。所述噴出口在俯視時例如排列成矩陣狀。各噴出口經由形成於上浮平台222的內部的氣體供給路徑而與氣體供給源連接。來自氣體供給源的氣體自所述噴出口噴出。
The floating
此外,在上浮平台222的上表面,也可形成多個抽吸口。所述抽吸口形成於與噴出口不同的位置,且例如排列成矩陣狀。各抽吸口經由形成於上浮平台222的內部的氣體抽吸路徑而與抽吸裝置(例如泵)連接。自上浮平台222的噴出口噴出的氣體的一部分自抽吸口被抽吸。因此,可更精密地控制對基板W施加的浮力。進而,可進一步減少基板W的撓曲。
In addition, a plurality of suction ports may also be formed on the upper surface of the floating
<1-1-2-3.基板搬送部> <1-1-2-3. Board conveying section>
在圖1的例子中,基板搬送部223包括基板吸盤部2231以及進退機構2232。基板吸盤部2231保持基板W的Y軸方向上的兩側的端面。在圖1的例子中,相對於基板W而在Y軸方向上的兩側分別設置有一對基板吸盤部2231。一對基板吸盤部2231在X軸方向上隔開間隔設置。各基板吸盤部2231具有支撐基板W的下表面中的Y軸方向上的端部的支撐部。在所述支撐部的上表面,例如形成有吸附口,所述吸附口經由支撐部內部的抽吸路徑而與抽吸裝置(例如泵)連接。通過自吸附口抽吸氣體,基板吸盤部2231可吸附基板W而予以保持。
In the example of FIG. 1 , the
進退機構2232使基板吸盤部2231沿著X軸方向移動。進退機構2232例如是線性馬達等。進退機構2232由控制部6控制。進退機構2232使基板吸盤部2231自移載單元221經由上浮平台222移動至基板待機部23。由此,保持於基板吸盤部2231的基板W也自移載單元221經由上浮平台222移動至基板待機部23。
The advancing and
<1-1-2-4.噴嘴> <1-1-2-4. Nozzle>
噴嘴224設置於上浮平台222的上方空間。在噴嘴224的下端,形成有與基板W的塗布區域R1對應的噴口。所述噴嘴224是其噴口在Y軸方向上長的長條噴嘴。噴口的長度(沿著Y軸方向的長度)與塗布區域R1的長度(沿著Y軸方向的長度)大致一致。
The
噴嘴224均經由未圖示的塗布液供給管而與塗布液供給
源連接。在塗布液供給管的中途設置有未圖示的泵,通過對所述泵進行驅動控制,切換塗布液自噴嘴224的噴出/停止。泵由控制部6控制。
Each of the
基板搬送部223使基板W移動至+X側,由此,基板W橫穿過噴嘴224的正下方。在基板W橫穿時,噴嘴224噴出塗布液。具體而言,當基板W的塗布區域R1的+X側的一端位於噴嘴224的正下方時,噴嘴224開始塗布液的噴出,當塗布區域R1的-X側的一端位於噴嘴224的正下方時,噴嘴224結束塗布液的噴出。由此,對塗布區域R1塗布塗布液,從而在塗布區域R1上形成塗膜。
The
此外,噴嘴224也可能夠對基板W噴出多種塗布液。更具體而言,可設置有與多種塗布液分別對應的多個噴嘴224。作為多種塗布液,例如可採用光致抗蝕劑用的塗布液和絕緣膜用的塗布液。
In addition, the
<1-1-3.基板待機部> <1-1-3. Board Standby Section>
基板待機部23依次接納通過處理裝置本體22進行了處理的基板W。基板待機部23可使兩片基板W待機。所述基板待機部23包括第一待機部231以及第二待機部232。第一待機部231可使一片基板W待機,第二待機部232可使一片基板W待機。
The
在圖1和圖3的例子中,第一待機部231和第二待機部232是沿著處理裝置本體22的搬送方向(即,X軸方向)排列。更具體來說,第一待機部231設置於比處理裝置本體22更靠+X
側處,第二待機部232設置於處理裝置本體22與第一待機部231之間。第二待機部232還具有將自處理裝置本體22搬送的基板W搬送至第一待機部231的功能。
In the example of FIG. 1 and FIG. 3, the 1st standby|waiting
在處理裝置本體22中進行了處理的一片基板W(以下稱為第一基板W1)利用基板搬送部223經由第二待機部232而被搬送至第一待機部231。第一待機部231可使所述第一基板W1待機。在處理裝置本體22中繼第一基板W1之後進行了處理的第二基板W2利用基板搬送部223而被搬送至第二待機部232。第二待機部232可使第二基板W2待機。
One substrate W (hereinafter referred to as the first substrate W1 ) processed in the processing apparatus
作為更具體的一例,基板待機部23包括出口上浮平台233、第一上升機構234、以及第二上升機構235。出口上浮平台233設置於比上浮平台222更靠+X側處。在出口上浮平台233的上表面,與入口上浮平台2212同樣地也形成有用於噴出氣體的多個噴口。出口上浮平台233的長度(沿著X軸方向的長度)設定為比兩片基板W的長度(沿著X軸方向的長度)的總和長。
As a more specific example, the
第一基板W1被搬送至出口上浮平台233的下游部分。第一上升機構234使位於所述下游部分的第一基板W1上升。第一上升機構234由控制部6控制。在圖3的例子中,第一上升機構234包括多個頂銷2341以及升降機構2342。各頂銷2341具有棒狀的形狀,以其長度方向沿著Z軸的姿勢設置。如圖3所例示,頂銷2341的-Z側的基端部可相互連結。在出口上浮平台233,以不與多個噴口中的任一個發生干擾的方式形成有沿Z軸方向延伸
存在的多個貫通孔。頂銷2341分別貫通配置於出口上浮平台233的貫通孔中。
The first substrate W1 is conveyed to the downstream portion of the
升降機構2342例如是氣缸,且使多個頂銷2341升降。所述升降機構2342由控制部6控制。在頂銷2341下降的狀態下,頂銷2341的前端部相對於出口上浮平台233的上表面而位於-Z側。另一方面,在頂銷2341上升的狀態下,頂銷2341的前端部相對於出口上浮平台233的上表面而位於+Z側。在解除了利用基板吸盤部2231對第一基板W1的吸附的狀態下,升降機構2342使頂銷2341上升。通過所述上升,頂銷2341的前端部可與第一基板W1的下表面接觸而將第一基板W1頂起。頂銷2341可使第一基板W1上升至自出口上浮平台233噴出的氣體實質上達不到的高度位置。由此,第一基板W1由頂銷2341支撐。
The elevating
在圖3的例子中,使第一基板W1待機的第一待機部231包括出口上浮平台233的下游部分以及第一上升機構234。
In the example of FIG. 3 , the
繼第一基板W1之後進行處理的第二基板W2被搬送至出口上浮平台233的上游部分。出口上浮平台233的上游部分相對於下游部分而位於-X側。第二上升機構235使位於所述上游部分的第二基板W2上升。第二上升機構235通過控制部6而與第一上升機構234獨立地受到控制。在圖3的例子中,第二上升機構235包括多個頂銷2351以及升降機構2352。頂銷2351和升降機構2352分別與頂銷2341和升降機構2342相同,因此省略詳細說明。
The second substrate W2 processed after the first substrate W1 is conveyed to the upstream portion of the
與升降機構2342同樣地,在解除了利用基板吸盤部2231對第二基板W2的吸附的狀態下,升降機構2352使頂銷2351上升。通過所述上升,頂銷2351的前端部可與第二基板W2的下表面接觸而將第二基板W2頂起。第二基板W2由頂銷2351支撐。
Like the
在圖3的例子中,使第二基板W2待機的第二待機部232包括出口上浮平台233的上游部分以及第二上升機構235。
In the example of FIG. 3 , the
如上所述,第一上升機構234和第二上升機構235相互獨立地受到驅動,因此,既可僅使第一基板W1上升,也可僅使第二基板W2上升,還可使第一基板W1和第二基板W2兩者上升。
As described above, since the
第一基板W1和第二基板W2分別是在由頂銷2341和頂銷2351支撐的狀態下被搬送機器人4取出。
The first substrate W1 and the second substrate W2 are taken out by the
<1-2.搬送機器人> <1-2. Transfer robot>
在圖3的例子中,搬送機器人4位於比基板待機部23更靠+X側處。所述搬送機器人4可將第一基板W1和第二基板W2兩者整批自基板待機部23取出。另外,搬送機器人4也可將第一基板W1和第二基板W2個別地自基板待機部23取出。
In the example of FIG. 3 , the
在圖1和圖3的例子中,搬送機器人4包括手41、移動機構42、旋轉機構43以及升降機構44。手41具有可供兩片基板W以在X軸方向上排列的狀態載置的程度的尺寸。例如,手41包括多根指狀構件411以及連結指狀構件411的基端的基端構件412。指狀構件411具有長條狀的形狀,在其上表面載置基板W。兩片基板W沿著指狀構件411的長邊方向排列載置。因此,指狀構件
411的長度方向上的長度是根據基板W的與兩片對應的長度、以及基板W之間的間隔而設定。
In the example of FIGS. 1 and 3 , the
移動機構42可使手41沿水平方向移動。例如,移動機構42包括一對臂(未圖示)。各臂具有長條狀的多個連結構件,所述連結構件的端部彼此可旋轉地被連結。各臂的一端連結於手41(具體來說為基端構件412),另一端連結於旋轉機構43。通過控制連結構件的連結角度,可使手41沿水平方向移動。旋轉機構43可使移動機構42的臂的另一端以沿著Z軸方向的旋轉軸為中心旋轉。由此,手41沿著圓弧移動。通過所述移動,可改變手41的方向。旋轉機構43例如包括馬達。升降機構44使旋轉機構43沿著Z軸方向升降,由此使手41升降。升降機構44例如具有滾珠螺桿(ball screw)機構。移動機構42、旋轉機構43和升降機構44由控制部6控制。
The moving
搬送機器人4可通過適宜地使手41移動和旋轉,而使手41分別移動至基板待機部23、乾燥部31和交接單元5。
The
例如,搬送機器人4通過驅動旋轉機構43,使手41與基板待機部23相向。接著,搬送機器人4通過驅動升降機構44,使手41相對於第一基板W1和第二基板W2而位於-Z側。接著,搬送機器人4通過驅動移動機構42,將手41移動至-X側,並使手41在Z軸方向上與第一基板W1和第二基板W2兩者相向。接著,搬送機器人4通過驅動升降機構44,使手41上升。由此,搬送機器人4可自基板待機部23接收第一基板W1和第二基板W2兩者。
For example, the
搬送機器人4可通過適宜地使手41旋轉和移動,而將第一基板W1和第二基板W2整批搬送至乾燥部31。具體來說,搬送機器人4通過驅動旋轉機構43,使手41與乾燥部31相向。接著,搬送機器人4通過驅動升降機構44,使手41與乾燥部31的擋板相向。接著,搬送機器人4通過驅動移動機構42,使手41經由擋板進入乾燥部31的內部,並使第一基板W1和第二基板W2在Z軸方向上與基板保持部相向。接著,搬送機器人4通過驅動升降機構44,使手41下降,將第一基板W1和第二基板W2交接至基板保持部。接著,搬送機器人4通過驅動移動機構42,使手41自乾燥部31的內部退避。
The
另外,搬送機器人4也可將第一基板W1和第二基板W2個別地取出。但是,為了將第一基板W1和第二基板W2整批取出,第一基板W1和第二基板W2兩者需要在基板待機部23待機。即,在第一基板W1被搬送至基板待機部23之後,需要等待下一第二基板W2被搬送至基板待機部23。與此相對,在將第一基板W1和第二基板W2個別地取出的情況下,即使在第二基板W2尚未搬送至基板待機部23的狀態下,也可將第一基板W1自基板待機部23取出。因此,搬送機器人4在進行個別搬送時,可在不等待第二基板W2的情況下將第一基板W1自基板待機部23取出。
In addition, the
搬送機器人4可僅將第一基板W1自基板待機部23取出。作為具體的一例,搬送機器人4在第二基板W2未被搬送至基板待機部23的狀態(即,第二基板W2在處理裝置本體22中
接受處理的狀態)下進行取出動作。即,搬送機器人4通過旋轉機構43的旋轉而使手41與基板待機部23相向,然後通過升降機構44的升降,使手41相對於第一基板W1而位於-Z側。然後,搬送機器人4通過驅動移動機構42,使手41移動至-X側,使手41的前端側的部分僅與第一基板W1相向。然後,搬送機器人4使手41上升。由此,搬送機器人4可自基板待機部23僅接收第一基板W1。搬送機器人4僅將所述第一基板W1搬送至乾燥部31。
The
另外,在第一基板W1已被取出的狀態下,搬送機器人4可以如下方式僅將第二基板W2自基板待機部23取出。即,搬送機器人4通過旋轉機構43的旋轉,使手41與基板待機部23相向,然後通過升降機構44的升降,使手41相對於第二基板W2而位於-Z側。然後,搬送機器人4通過驅動移動機構42,使手41與第二基板W2相向。然後,搬送機器人4通過驅動升降機構44使手41上升。由此,搬送機器人4可僅接收第二基板。搬送機器人4僅將所述第二基板W2搬送至乾燥部31。
In addition, in a state in which the first substrate W1 has been taken out, the
如上所述,搬送機器人4可將依次搬送至基板待機部23的基板W逐片依次取出,並向乾燥部31依次搬送。此外,在此種個別搬送中,當第二基板W2被搬送至基板待機部23時第一基板W1已被取出,因此第二基板W2也可被搬送至第一待機部231。
As described above, the
關於搬送機器人4自基板待機部23取出的基板W的片數的決定方法,之後將詳細描述。
The method for determining the number of substrates W taken out from the
<1-3.減壓乾燥裝置> <1-3. Vacuum drying device>
減壓乾燥裝置3的乾燥部31可對兩片基板W整批進行減壓乾燥處理。此外,減壓乾燥裝置3是位於塗布裝置2的下游側(+X側)的下游處理部。
The drying
作為多個乾燥部31,例如設置有三個乾燥部31a至乾燥部31c。在圖1的例子中,在俯視時,兩個乾燥部31設置於搬送機器人4的周圍。例如,乾燥部31a相對於搬送機器人4而設置於+Y側,乾燥部31c相對於搬送機器人4而設置於+X側。乾燥部31b相對於乾燥部31a而設置於+Z側。即,乾燥部31b層疊於乾燥部31a的+Z側。
As the plurality of drying
乾燥部31均包括未圖示的腔室、基板保持部以及減壓機構。腔室形成密閉空間。其中,在腔室的面向搬送機器人4的側表面,設置有用於基板W的搬出和搬入的擋板(未圖示)。通過關閉所述擋板,腔室形成密閉空間。通過打開擋板,搬送機器人4可與腔室內的基板保持部進行基板W的交接。基板保持部可以水平排列的狀態保持兩片基板W。搬送機器人4既可將兩片基板W整批傳遞至基板保持部,也可將一片基板W傳遞至基板保持部。減壓機構抽吸腔室內的氣體,以使腔室內的壓力降低。具體來說,例如使腔室內的壓力降低至塗布液的溶劑的汽化壓力。由此,基板W上的塗膜的溶劑蒸發,可使基板W上的塗膜適度地乾燥。即,進行減壓乾燥處理。
Each of the drying
<1-4.交接單元> <1-4. Handover unit>
交接單元5是對減壓乾燥裝置3與加熱處理裝置7之間的基
板W的交接進行中轉的單元。例如,交接單元5位於搬送機器人4與加熱處理裝置7之間。作為更具體的一例,交接單元5可設置於乾燥部31c的+Z側。即,交接單元5可層疊於乾燥部31c的+Z側。
The
交接單元5具有基板保持部,所述基板保持部以水平排列的狀態保持兩片基板W。搬送機器人4可將兩片基板W整批傳遞至基板保持部,另外,也可通過將基板W逐片傳遞至基板保持部而使兩片基板W保持於基板保持部。例如,搬送機器人4將第一基板W1傳遞至基板保持部中的自搬送機器人4觀察時為內側的部分,並將第二基板W2傳遞至基板保持部中的近前側的部分。由此,在基板保持部載置第一基板W1和第二基板W2。
The
<2.加熱處理裝置> <2. Heat treatment device>
在圖1的例子中,還示出了加熱處理裝置7。加熱處理裝置7包括加熱單元71以及搬送機器人72。搬送機器人72具有與搬送機器人4相同的構成,並自交接單元5將第一基板W1和第二基板W2兩者整批取出。搬送機器人72將第一基板W1和第二基板W2整批搬送至加熱單元71。
In the example of FIG. 1, the heat processing apparatus 7 is also shown. The heat treatment apparatus 7 includes a
加熱單元71均包括未圖示的基板保持部以及加熱器。基板保持部可以水平排列的狀態保持第一基板W1和第二基板W2兩者。加熱器對第一基板W1和第二基板W2賦予熱。由此,第一基板W1和第二基板W2的塗膜大致完全乾燥。
Each of the
在作為由處理裝置本體22塗布的塗布液而採用光致抗蝕
劑用的塗布液的情況下,通過利用所述加熱單元71進行的加熱,可進行曝光處理前的所謂的預烘烤處理。
Photoresist is used as the coating liquid applied by the processing apparatus
<3.搬送機器人的動作> <3. Operation of the transfer robot>
如上所述,處理裝置本體22(上游處理部)在搬送基板W的同時,對基板W逐片依次進行塗布處理。即,在對第一基板W1的塗布處理結束之後,對繼所述第一基板W1之後的第二基板W2進行塗布處理。塗布處理結束的基板W隨著時間的經過而自然乾燥,因此先結束塗布處理的第一基板W1的乾燥狀態可與後結束塗布處理的第二基板W2的乾燥狀態不同。所述乾燥狀態的差異程度例如取決於基板上所形成的塗膜的厚度(膜厚)。 As described above, the processing apparatus main body 22 (upstream processing unit) performs the coating process on the substrates W one by one while the substrates W are being conveyed. That is, after the coating process on the first substrate W1 is completed, the coating process is performed on the second substrate W2 following the first substrate W1. Since the substrate W after the coating process is naturally dried over time, the drying state of the first substrate W1 after the coating process is completed first may be different from the drying state of the second substrate W2 after the coating process is completed later. The degree of difference in the dry state depends on, for example, the thickness (film thickness) of the coating film formed on the substrate.
例如,在塗布應形成耐蝕刻性被膜的光致抗蝕劑液來作為塗布液(以下稱為第一塗布液)的情況下,使塗膜的膜厚相對較薄。在膜厚較薄的情況下,塗膜中所含的溶劑量變少。其結果,乾燥所需要的必要乾燥時間比較短。即,第一塗布液乾燥的速度比較快。在所述情況下,由所述自然乾燥時間的差引起的兩基板W的乾燥狀態的差比較大。因此,理想的是對第一基板W1和第二基板W2以個別的乾燥時間進行減壓乾燥處理。 For example, when applying a photoresist liquid that should form an etching-resistant film as a coating liquid (hereinafter referred to as a first coating liquid), the film thickness of the coating film is relatively thin. When the film thickness is thin, the amount of the solvent contained in the coating film decreases. As a result, the necessary drying time required for drying is relatively short. That is, the drying speed of the first coating liquid is relatively fast. In this case, the difference between the drying states of the two substrates W due to the difference in the natural drying time is relatively large. Therefore, it is desirable to perform the reduced-pressure drying treatment on the first substrate W1 and the second substrate W2 at separate drying times.
另一方面,例如在塗布應形成絕緣膜的聚醯亞胺系或丙烯酸系的塗布液(以下稱為第二塗布液)的情況下,使塗膜的膜厚相對較厚(例如設為光致抗蝕劑液的膜厚的倍數程度的膜厚)。在膜厚較厚的情況下,塗膜中所含的溶劑量變多。其結果,第二塗布液乾燥的速度比較慢。在所述情況下,由所述自然乾燥時間的差引 起的兩基板W的乾燥狀態的差比較小。 On the other hand, for example, when applying a polyimide-based or acrylic-based coating liquid (hereinafter referred to as a second coating liquid) that is to form an insulating film, the film thickness of the coating film is relatively thick (for example, a light The film thickness of a multiple of the film thickness of the resist liquid). When the film thickness is thick, the amount of the solvent contained in the coating film increases. As a result, the drying speed of the second coating liquid is relatively slow. In this case, it is caused by the difference in the natural drying time The difference between the dry states of the two substrates W raised is relatively small.
因此,搬送機器人4根據基板W的乾燥所需要的必要乾燥時間來切換搬送方法。具體來說,當基板W的乾燥所需要的必要乾燥時間為第一時間時,搬送機器人4將第一基板W1搬送至多個乾燥部31中的一個乾燥部31,並將第二基板W2搬送至多個乾燥部31中的另一個乾燥部31。由此,可對第一基板W1和第二基板W2分別以各自所適合的乾燥時間進行減壓乾燥處理。
Therefore, the
另一方面,當必要乾燥時間為比第一時間長的第二時間時,搬送機器人4接收第一基板W1和第二基板W2兩者,並整批搬送至多個乾燥部31中的一個乾燥部31。由此,可提高生產率。
On the other hand, when the necessary drying time is the second time longer than the first time, the
由於必要乾燥時間例如取決於塗膜的膜厚,因此也可以說搬送機器人4是根據塗膜的膜厚來切換搬送方法。即,當處理裝置本體22的噴嘴224將第一塗布液噴出至基板W而形成比較薄的塗膜時,搬送機器人4將第一基板W1和第二基板W2個別地自基板待機部23取出。更具體來說,搬送機器人4在不等待第二基板W2搬送至基板待機部23的情況下,僅將第一基板W1自基板待機部23取出,並將所述第一基板W1例如搬送至乾燥部31a。所述乾燥部31a對第一基板W1在規定的第一乾燥時間內進行減壓乾燥處理。當第二基板W2被搬送至基板待機部23時,搬送機器人4僅將第二基板W2自基板待機部23取出,並將所述第二基板W2搬送至與第一基板W1不同的乾燥部31b。所述乾燥部31b對第二基板W2在規定的第二乾燥時間內進行減壓乾燥處理。
Since the necessary drying time depends on, for example, the film thickness of the coating film, it can also be said that the
在利用乾燥部31a進行的減壓乾燥處理結束時,搬送機器人4將第一基板W1自乾燥部31a取出並搬送至交接單元5,在利用乾燥部31b進行的減壓乾燥處理結束時,搬送機器人4將第二基板W2自乾燥部31b取出並搬送至交接單元5。
When the drying under reduced pressure by the drying
如上所述,對於擔心由自然乾燥引起的乾燥狀態的差變大的第一基板W1和第二基板W2,不進行同時搬送而進行個別搬送。在所述個別搬送中,不等待之後的第二基板W2便取出第一基板W1,因此各取出時間點下的第一基板W1和第二基板W2的乾燥狀態的差小。然後,乾燥部31a、乾燥部31b對第一基板W1和第二基板W2以相互大致相等的第一乾燥時間和第二乾燥時間分別進行減壓乾燥處理。第一乾燥時間和第二乾燥時間例如是預先設定的,且例如為40秒。即將被搬送至乾燥部31a之前的第一基板W1的乾燥狀態與即將被搬送至乾燥部31b之前的第二基板W2的乾燥狀態的差小,因此減壓乾燥處理之後的第一基板W1和第二基板W2的乾燥狀態的差也小。
As described above, the first substrate W1 and the second substrate W2 in which there is a concern that the difference in dry state due to natural drying may become large, are not simultaneously conveyed but are individually conveyed. In the individual transfer, the first substrate W1 is taken out without waiting for the subsequent second substrate W2, so the difference between the dry states of the first substrate W1 and the second substrate W2 at each take-out time point is small. Then, the drying
另一方面,當處理裝置本體22的噴嘴224噴出第二塗布液而形成比較厚的塗膜時,搬送機器人4將第一基板W1和第二基板W2兩者整批取出。搬送機器人4將第一基板W1和第二基板W2兩者整批搬送至乾燥部31(例如乾燥部31a)。乾燥部31a對第一基板W1和第二基板W2兩者以規定的乾燥時間(例如80秒)整批進行減壓乾燥處理。所述乾燥時間例如也是預先設定的。如此,在無需擔心由自然乾燥引起的乾燥狀態的差變大的情況下,
搬送機器人4也可將第一基板W1和第二基板W2兩者整批搬送至乾燥部31。
On the other hand, when the
更具體來說,假設第一基板W1與第二基板W2的待機時間的差、即自然乾燥狀態的差為5秒的情況。在將第一塗布液噴出至基板W而形成比較薄的塗膜的情況下,如上所述,對第一基板W1和第二基板W2分別進行40秒的減壓乾燥處理。此時,在對第一基板W1和第二基板W2整批且同時進行減壓乾燥的情況下,是對自然乾燥狀態的差為5秒的兩片基板同時進行減壓乾燥。相對於減壓乾燥時間(40秒)來說,自然乾燥的時間差(5秒)比較大,因此擔心減壓乾燥處理後的第一基板W1上的塗膜狀態與第二基板W2上的塗膜狀態不同。因此,如上所述,將第一基板W1和第二基板W2逐片地分別搬送至乾燥部31a、乾燥部31b來執行減壓乾燥處理,以便不產生第一基板W1與第二基板W2的待機時間的差(自然乾燥狀態的時間差)。
More specifically, it is assumed that the difference in standby time between the first substrate W1 and the second substrate W2, that is, the difference in the natural drying state is 5 seconds. When the first coating liquid is discharged onto the substrate W to form a relatively thin coating film, as described above, the first substrate W1 and the second substrate W2 are each subjected to a reduced-pressure drying treatment for 40 seconds. At this time, when the first substrate W1 and the second substrate W2 are batch-dried at the same time under reduced pressure, the two substrates whose difference in natural drying state is 5 seconds are dried under reduced pressure at the same time. Compared with the drying time under reduced pressure (40 seconds), the time difference of natural drying (5 seconds) is relatively large, so there is concern about the state of the coating film on the first substrate W1 after the vacuum drying treatment and the coating film on the second substrate W2. Status is different. Therefore, as described above, the first substrate W1 and the second substrate W2 are transported to the
另外,在將第一塗布液噴出至基板W而形成比較厚的塗膜的情況下,如上所述,對第一基板W1與第二基板W2同時分別進行80秒的減壓乾燥處理。如此,即使對第一基板W1與第二基板W2整批且同時地進行減壓乾燥,相對於減壓乾燥時間(80秒)來看,自然乾燥的時間差(5秒)也比較小,因此減壓乾燥處理後的第一基板W1上的塗膜狀態與第二基板W2上的塗膜狀態也不具有在工藝上會產生問題的程度的不同。 When the first coating liquid is discharged onto the substrate W to form a relatively thick coating film, as described above, the first substrate W1 and the second substrate W2 are simultaneously subjected to a reduced-pressure drying process for 80 seconds, respectively. In this way, even if the first substrate W1 and the second substrate W2 are simultaneously dried under reduced pressure in a batch, the time difference (5 seconds) for natural drying is relatively small compared to the drying time under reduced pressure (80 seconds), so the reduction is reduced. The state of the coating film on the first substrate W1 after the press-drying treatment and the state of the coating film on the second substrate W2 also do not differ to such an extent that there is a problem in the process.
當利用乾燥部31a進行的減壓乾燥處理結束時,搬送機
器人4將第一基板W1和第二基板W2兩者自乾燥部31a整批取出並搬送至交接單元5。
When the drying under reduced pressure by the drying
由此,可對第一基板W1和第二基板W2整批進行乾燥處理。由此,可提高生產率。 Thereby, the drying process of the first substrate W1 and the second substrate W2 can be performed in a batch. Thereby, productivity can be improved.
此外,在塗布裝置2(處理裝置本體22)塗布一種塗布液的情況下,搬送機器人4採用與所述塗布液的種類(膜厚)對應的一種搬送方法。根據本實施形態的基板處理裝置1,搬送機器人4可切換搬送方法,因此,作為塗布裝置2,可採用塗布第一塗布液的塗布裝置,也可採用塗布第二塗布液的塗布裝置。換句話說,無論是在需要塗布第一塗布液的塗布裝置2的系統中,還是在需要塗布第二塗布液的塗布裝置2的系統中,均可應用基板處理裝置1。即,基板處理裝置1適合於多片基板W的同時處理和多片基板W的個別處理這兩種處理。
In addition, when the coating apparatus 2 (processing apparatus main body 22) coats one type of coating liquid, the conveying
另一方面,塗布裝置2也可根據基板W來選擇性地塗布第一塗布液和第二塗布液。在所述情況下,關於塗布裝置2中要塗布的塗布液的種類的信息(膜厚信息),例如可自基板處理裝置1的上游側的裝置通知給控制部6,或者也可由操作者輸入。控制部6根據塗布液的種類,如上所述對利用搬送機器人4的搬送方法進行切換。
On the other hand, the
圖4是表示控制部6切換搬送方法時的搬送方法的決定動作的一例的流程圖。例如可在每次將基板W搬入基板處理裝置1時執行圖4的流程圖。首先,在步驟S1中,控制部6判斷基板
W的乾燥所需要的必要乾燥時間T1是否為基準時間Tref以下。表示必要乾燥時間T1的信息由比基板處理裝置1更靠上游側的裝置或操作者輸入至控制部6。基準時間Tref例如是預先設定的,且例如儲存於儲存裝置64等中。
FIG. 4 is a flowchart showing an example of the operation of determining the conveyance method when the
當判斷出必要乾燥時間T1為基準時間Tref以下時,控制部6在步驟S2中採用如下的搬送方法(個別搬送):將第一基板W1和第二基板W2自基板待機部23個別地取出,並將第一基板W1和第二基板W2逐片搬送至相互不同的乾燥部31。
When it is determined that the required drying time T1 is equal to or less than the reference time Tref, the
另一方面,當判斷出必要乾燥時間T1大於基準時間Tref時,控制部6在步驟S3中採用如下的搬送方法(同時搬送):將第一基板W1和第二基板W2自基板待機部23整批取出,並將第一基板W1和第二基板W2整批搬送至一個乾燥部31。
On the other hand, when it is determined that the required drying time T1 is longer than the reference time Tref, the
<4.待機> <4. Standby>
在所述例子中,當第一基板W1被搬送至第一待機部231時,第一上升機構234使第一基板W1上升。因此,在同時搬送中,在第一上升機構234使第一基板W1上升的狀態下,第二基板W2自基板搬送部223被搬送至第二待機部232。換句話說,第一基板W1在由頂銷2341支撐的狀態下等待第二基板W2或搬送機器人4。
In the above example, when the first substrate W1 is conveyed to the
為了進行比較,考慮第一基板W1在出口上浮平台233上待機的情況。例如,也可在停止了出口上浮平台233的下游部分的氣體噴出的狀態下,使第一基板W1在出口上浮平台233上待
機。在所述情況下,第一基板W1的下表面與出口上浮平台233的上表面的接觸面積大。因此,在第一基板W1與其支撐體(出口上浮平台233)之間移動的熱量比較大。
For comparison, consider the case where the first substrate W1 is waiting on the
或者,第一基板W1也可在承受出口上浮平台233的氣體噴出的同時,保持於規定的吸盤機構而待機。在所述情況下,在第一基板W1的下表面產生了氣流,因此在第一基板W1與氣流之間移動的熱量比較大。
Alternatively, the first substrate W1 may stand by while being held by a predetermined suction pad mechanism while receiving the gas ejection from the
與此相對,在第一基板W1由頂銷2341支撐的情況下,第一基板W1與頂銷2341的接觸面積小。由此,在第一基板W1與支撐體(頂銷2341)之間移動的熱量比較小。另外,第一基板W1可在氣體不會到達第一基板W1的下表面的位置待機。由此,在第一基板W1與氣體之間移動的熱量也小。因此,可減小支撐體和氣體對第一基板W1的溫度狀態(即乾燥狀態)的影響。換句話說,可減小同時搬送時的第一基板W1與第二基板W2的乾燥狀態的差。 On the other hand, when the first substrate W1 is supported by the ejector pins 2341, the contact area between the first substrate W1 and the ejector pins 2341 is small. Thereby, the amount of heat that moves between the first substrate W1 and the support body (the ejector pin 2341 ) is relatively small. In addition, the first substrate W1 can stand by at a position where the gas does not reach the lower surface of the first substrate W1. Thereby, the amount of heat transferred between the first substrate W1 and the gas is also small. Therefore, the influence of the support body and the gas on the temperature state (ie, the dry state) of the first substrate W1 can be reduced. In other words, the difference between the dry states of the first substrate W1 and the second substrate W2 during simultaneous conveyance can be reduced.
第二實施形態. The second embodiment.
第二實施形態的基板處理裝置1的構成的一例與第一實施形態相同。但是,第二實施形態的基板處理裝置1包括塗布裝置2A來取代塗布裝置2。
An example of the configuration of the
圖5是表示塗布裝置2A的構成的一例的側視圖。塗布裝置2A具有除了處理裝置本體22的構成和基板待機部23的構成之外與塗布裝置2相同的構成。與圖3的處理裝置本體22相比,
塗布裝置2A的處理裝置本體22還包括出口上浮平台225。所述出口上浮平台225具有與出口上浮平台233相同的構成。
FIG. 5 is a side view showing an example of the configuration of the
基板待機部23例如是輥子搬送機,且具有多個旋轉軸236A、多個旋轉軸236B、多個輥子237A以及多個輥子237B。基板待機部23的構成與基板導入部21相同。其中,基板W是利用搬送機器人4來取出,因此基板待機部23構成為不與搬送機器人4的手41發生干擾。在所述基板待機部23中,旋轉軸236B和輥子237B構成第一待機部231,旋轉軸236A和輥子237A構成第二待機部232。
The board|substrate standby|waiting
通過處理裝置本體22進行了處理的第一基板自出口上浮平台225經由第二待機部232被搬送至第一待機部231。第一基板W1在輥子237B上待機。通過處理裝置本體22進行了處理的第二基板W2自出口上浮平台225被搬送至第二待機部232。第二基板W2在輥子237A上待機。
The first substrate processed by the processing apparatus
與第一實施形態同樣地,搬送機器人4可將第一基板W1和第二基板W2兩者自基板待機部23整批取出,另外可將第一基板W1和第二基板W2個別地取出。
Like the first embodiment, the
此外,在第二實施形態中,也與第一實施形態同樣地,可設置有第一上升機構234和第二上升機構235。
In addition, also in 2nd Embodiment, the
以上,對基板搬送裝置和基板搬送方法的實施形態進行了說明,但只要不脫離所述實施形態的主旨,則也可在所述內容的基礎上進行各種變更。所述各種實施形態和變形例可適宜組合來 實施。 As mentioned above, although the embodiment of a board|substrate conveyance apparatus and a board|substrate conveyance method was described, it can make various changes based on the content mentioned above, unless it deviates from the summary of the said embodiment. The various embodiments and modifications described above can be combined as appropriate implement.
例如,也可根據塗布液的種類來變更搬送方式,而非根據膜厚的不同來變更搬送方式。例如在包含揮發性高的溶劑的塗布液的情況下,減壓乾燥時間比較短。在所述情況下,自然乾燥狀態的時間差對減壓乾燥造成的影響變大。因此,優選將基板逐片搬送至減壓乾燥裝置的方式。相反,在包含揮發性低的溶劑的塗布液的情況下,減壓乾燥時間比較長。在所述情況下,自然乾燥狀態的時間差對減壓乾燥造成的影響小。因此,優選採用將多片基板整批搬送至減壓乾燥裝置的方式,以提高生產率。 For example, the conveyance method may be changed according to the type of the coating liquid, not according to the difference in film thickness. For example, in the case of a coating liquid containing a highly volatile solvent, the drying time under reduced pressure is relatively short. In such a case, the effect of the time difference in the natural drying state on drying under reduced pressure becomes large. Therefore, a method of conveying the substrates one by one to a vacuum drying apparatus is preferable. Conversely, in the case of a coating liquid containing a solvent with low volatility, the drying time under reduced pressure is relatively long. In this case, the effect of the time difference in the natural drying state on drying under reduced pressure is small. Therefore, it is preferable to adopt the method of conveying a plurality of substrates in a batch to a vacuum drying apparatus in order to improve productivity.
為了進行減壓乾燥,也可設置一個乾燥部而非設置多個乾燥部。在自塗布裝置搬出的多片基板的時間間隔長的情況下,即使是一個乾燥部,在前一基板的減壓乾燥處理完成時也會空閒,因此可逐片搬入基板。 For drying under reduced pressure, one drying section may be provided instead of a plurality of drying sections. When the time interval between the multiple substrates unloaded from the coating apparatus is long, even one drying section will be free when the vacuum drying process of the previous substrate is completed, so the substrates can be loaded one by one.
例如,也可在基板處理裝置1設置用於調整第一基板W1和第二基板W2的位置和姿勢的排齊機構。所述排齊機構可設置於例如基板待機部23、減壓乾燥裝置3以及交接單元5中的至少任一構件。作為所述排齊機構,例如可採用日本專利特開2018、160586號公報中所公開的間隔調整部和排齊部。
For example, an alignment mechanism for adjusting the positions and postures of the first substrate W1 and the second substrate W2 may be provided in the
1:基板處理裝置 1: Substrate processing device
2:塗布裝置 2: Coating device
4:搬送機器人 4: Transfer robot
6:控制部 6: Control Department
21:基板導入部 21: Substrate introduction part
22:處理裝置本體 22: Processing device body
23:基板待機部 23: Board Standby Section
41:手 41: Hands
42:移動機構 42: Moving Mechanisms
43:旋轉機構 43: Rotary Mechanism
44:升降機構 44: Lifting mechanism
211A、211B:旋轉軸 211A, 211B: Rotary shaft
212A、212B、2211:輥子 212A, 212B, 2211: Rollers
221:移載單元 221: Transfer unit
222:上浮平台 222: Floating Platform
224:噴嘴 224: Nozzle
231:第一待機部 231: First Standby Department
232:第二待機部 232: Second Standby Department
233:出口上浮平台 233: Export floating platform
234:第一上升機構 234: First Ascension Mechanism
235:第二上升機構 235: Second Ascent Mechanism
411:指狀構件 411: Fingers
412:基端構件 412: Base end member
2212:入口上浮平台 2212: Entrance floating platform
2213、2341、2351:頂銷 2213, 2341, 2351: ejector pins
2214、2342、2352:升降機構 2214, 2342, 2352: Lifting mechanism
W:基板 W: substrate
W1:第一基板 W1: the first substrate
W2:第二基板 W2: Second substrate
X、Y、Z:軸 X, Y, Z: axis
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TW201806103A (en) * | 2016-07-25 | 2018-02-16 | 斯庫林集團股份有限公司 | Thermal processing device, substrate processing apparatus and thermal processing method |
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