TWI745039B - Micro led display device and manufacturing method thereof - Google Patents

Micro led display device and manufacturing method thereof Download PDF

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TWI745039B
TWI745039B TW109128512A TW109128512A TWI745039B TW I745039 B TWI745039 B TW I745039B TW 109128512 A TW109128512 A TW 109128512A TW 109128512 A TW109128512 A TW 109128512A TW I745039 B TWI745039 B TW I745039B
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micro light
light emitting
transfer
emitting diode
transfer area
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TW109128512A
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TW202133429A (en
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賴育弘
李允立
林子暘
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錼創顯示科技股份有限公司
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes

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Abstract

A micro LED display device includes display substrate. The display substrate has a first transfer area and a second transfer area adjacent to each other. The first transfer area and the second transfer area include a plurality of pixel areas. The pixel area of the first transfer area includes the first micro light-emitting element is arranged in a straight line along the first direction. The pixel area of the second transfer area includes the second micro light-emitting element is arranged in another straight line along the first direction. In the first direction, the first micro-light emitting element and the second micro-light emitting element are arranged in a staggered manner. A manufacturing method of a micro LED display device is also provided.

Description

微型發光二極體顯示裝置及其製造方法Miniature light-emitting diode display device and manufacturing method thereof

本發明是有關於一種顯示裝置及其製造方法，且特別是有關於一種微型發光二極體顯示裝置及其製造方法。 The present invention relates to a display device and a manufacturing method thereof, and more particularly to a miniature light-emitting diode display device and a manufacturing method thereof.

隨著光電科技的進步，許多光電元件的體積逐漸往小型化發展。近幾年來由於發光二極體(Light-Emitting Diode,LED)製作尺寸上的突破，目前將發光二極體以陣列排列製作的微型發光二極體(micro-LED)顯示器在市場上逐漸受到重視。 With the advancement of optoelectronic technology, the volume of many optoelectronic components has gradually developed towards miniaturization. In recent years, due to breakthroughs in the size of light-emitting diodes (Light-Emitting Diodes, LEDs), micro-LED displays made of light-emitting diodes arranged in arrays have gradually gained attention in the market. .

進一步而言，在將微型發光二極體轉移至顯示基板的過程中，因晶圓的製程因素使得微型發光二極體厚度不均勻，基於每一次轉移程序中因大面積抓取，可能導致相鄰的任兩轉移區內的微型發光二極體的光場分佈產生差異而具有亮度差。據此，在顯示基板運作時，觀看者可能會察覺到相鄰的任兩轉移區的拼接處之間存在明顯的邊界，因而存在的顯示品質不佳的問題。 Furthermore, in the process of transferring the micro-light-emitting diode to the display substrate, the thickness of the micro-light-emitting diode is uneven due to the process factors of the wafer. Due to the large-area grasping during each transfer process, it may cause phase change. The light field distribution of the miniature light-emitting diodes in any two adjacent transfer areas is different, and there is a difference in brightness. Accordingly, when the display substrate is in operation, the viewer may perceive that there is a clear boundary between the splicing points of any two adjacent transfer areas, and thus there is a problem of poor display quality.

本發明提供一種微型發光二極體顯示裝置及其製造方法，其具有良好的顯示品質。 The invention provides a miniature light-emitting diode display device and a manufacturing method thereof, which has good display quality.

本發明的一種微型發光二極體顯示裝置的製造方法，至少包括以下步驟。藉由轉移頭拾取多個微型發光二極體。將多個微型發光二極體轉移並接合至顯示基板上，其中顯示基板具有並鄰的兩個轉移區。轉移步驟包括(a)將轉移頭移至兩個轉移區的其一的上方，並將多個微型發光二極體的一部分轉移至兩個轉移區的其一；(b)移動所述轉移頭，將轉移頭旋轉180度對應至兩個轉移區的另一的上方；以及(c)將多個微型發光二極體的另一部分轉移至兩個轉移區的另一，位在兩個轉移區的其一內的微型發光二極體與位在兩個轉移區的另一的微型發光二極體錯位設置。 The manufacturing method of a miniature light-emitting diode display device of the present invention includes at least the following steps. Pick up multiple miniature light-emitting diodes by the transfer head. A plurality of micro light emitting diodes are transferred and joined to the display substrate, wherein the display substrate has two adjacent transfer regions. The transferring step includes (a) moving the transfer head above one of the two transfer areas, and transferring a part of the plurality of micro light-emitting diodes to one of the two transfer areas; (b) moving the transfer head , Rotate the transfer head 180 degrees to correspond to the top of the other of the two transfer areas; and (c) transfer the other part of the multiple miniature light-emitting diodes to the other of the two transfer areas, which is located in the two transfer areas One of the micro light emitting diodes and the other micro light emitting diode located in the two transfer areas are arranged in a dislocation.

在本發明的一實施例中，上述的多個微型發光二極體包括多個第一色光微型發光二極體、多個第二色光微型發光二極體或多個第三色光微型發光二極體，且重複步驟(a)至步驟(c)，以使兩個轉移區的其一內具有至少一第一色光微型發光二極體、至少一第二色光微型發光二極體以及至少一第三色光微型發光二極體，並使兩個轉移區的另一內具有至少一第一色光微型發光二極體、至少一第二色光微型發光二極體以及至少一第三色光微型發光二極體。 In an embodiment of the present invention, the above-mentioned plurality of micro light emitting diodes includes a plurality of first color light micro light emitting diodes, a plurality of second color light micro light emitting diodes, or a plurality of third color light micro light emitting diodes. And repeat steps (a) to (c), so that one of the two transfer regions has at least one first color light micro light emitting diode, at least one second color light micro light emitting diode, and at least A third color light micro light emitting diode, and the other of the two transfer areas has at least one first color light micro light emitting diode, at least one second color light micro light emitting diode, and at least one third color light micro light emitting diode Light-emitting diodes.

在本發明的一實施例中，上述的位在兩個轉移區的其一內的第一色光微型發光二極體、第二色光微型發光二極體與第三 色光微型發光二極體沿第一方向排列成一直線，且位在兩個轉移區的另一內的第一色光微型發光二極體、第二色光微型發光二極體與第三色光微型發光二極體沿第一方向排列成另一直線，在第一方向上，位在兩個轉移區的其一內的第一色光微型發光二極體不重疊於位在兩個轉移區的另一內的第一色光微型發光二極體。 In an embodiment of the present invention, the first color light micro light emitting diode, the second color light micro light emitting diode, and the third color light micro light emitting diode are located in one of the two transfer regions. The color light micro light emitting diodes are arranged in a straight line along the first direction, and the first color light micro light emitting diodes, the second color light micro light emitting diodes and the third color light micro light emitting diodes are located in the other of the two transfer areas. The diodes are arranged in another straight line along the first direction. In the first direction, the first color light micro light emitting diode located in one of the two transfer areas does not overlap with the other located in the two transfer areas. Inside the first color light miniature light-emitting diodes.

在本發明的一實施例中，上述的轉移頭具有並列的第一邊緣與第二邊緣，在步驟(a)與步驟(c)中，第一邊緣重疊於兩個轉移區的其一與兩個轉移區的另一之間的交界。 In an embodiment of the present invention, the above-mentioned transfer head has a first edge and a second edge side by side. In step (a) and step (c), the first edge overlaps one and two of the two transfer areas. The junction between one transfer area and another.

在本發明的一實施例中，上述的在步驟(b)中，轉移頭的旋轉是在將轉移頭移至兩個轉移區的另一的上方之前或之後完成。 In an embodiment of the present invention, in the step (b) described above, the rotation of the transfer head is completed before or after the transfer head is moved above the other of the two transfer areas.

在本發明的一實施例中，上述的轉移頭的面積等於任一轉移區的面積。 In an embodiment of the present invention, the area of the aforementioned transfer head is equal to the area of any transfer area.

在本發明的一實施例中，上述的轉移頭用以拾取MxN個所述微型發光二極體，且M

Figure 109128512-A0305-02-0005-1
2N。 In an embodiment of the present invention, the above-mentioned transfer head is used to pick up M×N of the micro light-emitting diodes, and M
Figure 109128512-A0305-02-0005-1
2N.

本發明的一種微型發光二極體顯示裝置。顯示基板具有並鄰的第一轉移區與第二轉移區。第一轉移區與第二轉移區內皆包括多個畫素區。第一轉移區內的至少一畫素區包括沿第一方向排列成一直線的第一微型發光元件。第二轉移區內的至少一畫素區包括沿第一方向排列成另一直線的第二微型發光元件，在第一方向上，第一微型發光元件與第二微型發光元件錯位配置，第一 微型發光元件與第二微型發光元件具有相同色光。 A miniature light-emitting diode display device of the present invention. The display substrate has a first transfer area and a second transfer area adjacent to each other. Both the first transfer area and the second transfer area include a plurality of pixel areas. At least one pixel area in the first transfer area includes first micro light-emitting elements arranged in a line along the first direction. At least one pixel area in the second transfer area includes second micro light-emitting elements arranged in another straight line along the first direction. In the first direction, the first micro light-emitting elements and the second micro light-emitting elements are misaligned. The micro light emitting element and the second micro light emitting element have the same color light.

在本發明的一實施例中，上述的微型發光二極體顯示裝置更包括共用電極線。共用電極線配置於顯示基板上，並沿第一方向延伸穿過第一轉移區與第二轉移區。 In an embodiment of the present invention, the above-mentioned micro light emitting diode display device further includes a common electrode line. The common electrode line is disposed on the display substrate and extends through the first transfer area and the second transfer area along the first direction.

在本發明的一實施例中，上述的第一微型發光元件與第二微型發光元件皆包括第一型電極與第二型電極，且第一微型發光元件的第一型電極與所述第二微型發光元件的第一型電極接合於共用電極線。 In an embodiment of the present invention, the above-mentioned first micro light emitting element and the second micro light emitting element both include a first type electrode and a second type electrode, and the first type electrode of the first micro light emitting element and the second type electrode The first type electrode of the micro light emitting element is joined to the common electrode line.

在本發明的一實施例中，上述的微型發光二極體顯示裝置更包括多個畫素電極，配置於第一轉移區與第二轉移區內，其中每一畫素電極包括上電極與下電極，在垂直於第一方向的第二方向上，上電極與下電極位於共用電極線的兩側。 In an embodiment of the present invention, the above-mentioned micro light emitting diode display device further includes a plurality of pixel electrodes disposed in the first transfer area and the second transfer area, wherein each pixel electrode includes an upper electrode and a lower electrode. For the electrodes, in a second direction perpendicular to the first direction, the upper electrode and the lower electrode are located on both sides of the common electrode line.

在本發明的一實施例中，上述的第一微型發光元件的兩端分別接合於共用電極線與第一轉移區內的畫素電極中的上電極，且第二微型發光元件的兩端分別接合於共用電極線與第二轉移區內的畫素電極中的下電極。 In an embodiment of the present invention, both ends of the above-mentioned first micro light-emitting element are respectively connected to the upper electrode of the common electrode line and the pixel electrode in the first transfer area, and both ends of the second micro light-emitting element are respectively The bottom electrode of the pixel electrode connected to the common electrode line and the second transfer area.

在本發明的一實施例中，上述的微型發光二極體顯示裝置更包括配置於顯示基板上的第一共用電極線、第二共用電極線以及多個畫素電極，其中第一共用電極線平行於第二共用電極線，且第一共用電極線與第二共用電極線沿第一方向延伸穿過第一轉移區與第二轉移區，畫素電極陣列設置於所第一轉移區與第 二轉移區，其中每一畫素電極位於第一共用電極線與第二共用電極線之間，且每一畫素電極包括向第一共用電極線延伸的上電極與向第二共用電極線延伸的下電極。 In an embodiment of the present invention, the aforementioned micro light emitting diode display device further includes a first common electrode line, a second common electrode line, and a plurality of pixel electrodes disposed on the display substrate, wherein the first common electrode line Parallel to the second common electrode line, and the first common electrode line and the second common electrode line extend in the first direction through the first transfer area and the second transfer area, and the pixel electrode array is disposed in the first transfer area and the second transfer area. Two transfer areas, where each pixel electrode is located between the first common electrode line and the second common electrode line, and each pixel electrode includes an upper electrode extending to the first common electrode line and an upper electrode extending to the second common electrode line The lower electrode.

在本發明的一實施例中，上述的第一微型發光元件的兩端分別接合於第二共用電極線與第一轉移區內的畫素電極中的下電極，且第二微型發光元件的兩端分別連接第一共用電極線與第二轉移區內的畫素電極中的上電極。 In an embodiment of the present invention, the two ends of the above-mentioned first micro light-emitting element are respectively connected to the second common electrode line and the lower electrode of the pixel electrode in the first transfer area, and two of the second micro light-emitting element The terminals are respectively connected to the first common electrode line and the upper electrode of the pixel electrodes in the second transfer area.

在本發明的一實施例中，上述的第一共用電極線與第二共用電極線沿垂直於第一方向的第二方向排列。 In an embodiment of the present invention, the above-mentioned first common electrode line and the second common electrode line are arranged along a second direction perpendicular to the first direction.

在本發明的一實施例中，上述的顯示基板更包括第三轉移區與第四轉移區，在垂直於第一方向的第二方向上分別並鄰於第一轉移區與第二轉移區，且第三轉移區與第四轉移區的交界在第一方向上偏移於第一轉移區與第二轉移區的交界。 In an embodiment of the present invention, the above-mentioned display substrate further includes a third transfer area and a fourth transfer area, respectively and adjacent to the first transfer area and the second transfer area in a second direction perpendicular to the first direction, And the boundary between the third transfer area and the fourth transfer area is offset from the boundary between the first transfer area and the second transfer area in the first direction.

在本發明的一實施例中，上述的第三轉移區包括第三微型發光元件，且第三微型發光元件在第二方向上對準第二微型發光元件。 In an embodiment of the present invention, the aforementioned third transfer area includes a third micro light emitting element, and the third micro light emitting element is aligned with the second micro light emitting element in the second direction.

在本發明的一實施例中，上述的第二微型發光元件的數量與第三微型發光元件的數量為多個，且至少一第三微型發光元件在第二方向上對準至少一第二微型發光元件。 In an embodiment of the present invention, the number of the above-mentioned second micro light-emitting elements and the number of the third micro light-emitting elements are multiple, and at least one third micro light-emitting element is aligned with at least one second micro light-emitting element in the second direction. Light-emitting element.

在本發明的一實施例中，上述的第二轉移區與第三轉移區皆包括多個畫素區，且第二轉移區內的至少一畫素區在第二方 向上對準第三轉移區內的至少一畫素區。 In an embodiment of the present invention, the above-mentioned second transfer area and the third transfer area both include a plurality of pixel areas, and at least one pixel area in the second transfer area is on the second side. Align at least one pixel area in the third transfer area upward.

基於上述，本發明在轉移步驟中，當轉移頭由一轉移區轉移至另一轉移區時，將轉移頭旋轉180度可以較準確的將所需的微型發光二極體轉移到預定位置上而形成相互錯位，以減少轉移頭兩端微型發光二極體因晶圓製程因素導致厚度差異而產生明顯邊界並彌補相鄰轉移區之間的亮度差，因此在顯示基板運作時，可以具有良好的顯示品質。 Based on the above, in the transfer step of the present invention, when the transfer head is transferred from one transfer area to another transfer area, rotating the transfer head 180 degrees can more accurately transfer the required miniature light-emitting diodes to a predetermined position. Mutual misalignment is formed to reduce the thickness difference of the micro light-emitting diodes at the two ends of the transfer head. The obvious boundary is caused by the difference in thickness caused by the wafer process factors, and the brightness difference between adjacent transfer areas is compensated. Display quality.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

10:轉移頭 10: Transfer head

10e1、10e2:邊緣 10e1, 10e2: edge

100、200、300、300a、400:微型發光二極體顯示裝置 100, 200, 300, 300a, 400: micro light emitting diode display device

101:修補區 101: Repair Area

1101、110a1、110a2、110a3、110b1、110b2、110b3、110c1、110c2、110c3、110d1、110d2、110d3:微型發光二極體 1101, 110a1, 110a2, 110a3, 110b1, 110b2, 110b3, 110c1, 110c2, 110c3, 110d1, 110d2, 110d3: miniature light-emitting diode

110a、110b、110c、110d、210a、210b、310b、310c、410a、410b:微型發光元件 110a, 110b, 110c, 110d, 210a, 210b, 310b, 310c, 410a, 410b: micro light emitting element

111:第一型電極 111: The first type electrode

112:第二型電極 112: The second type electrode

120、420:顯示基板 120, 420: display substrate

130:共用電極線 130: Common electrode line

2301:第一共用電極線 2301: The first common electrode line

2302:第二共用電極線 2302: Second common electrode line

2303:第三共用電極線 2303: The third common electrode line

140、240:畫素電極 140, 240: pixel electrode

141、241:上電極 141, 241: upper electrode

142、242:下電極 142, 242: lower electrode

B、B1、B2:交界 B, B1, B2: junction

D1、D2:方向 D1, D2: direction

S1、S2、S3、S4、S12、S22、S13、S23、S33、S43、S14、S24:轉移區 S1, S2, S3, S4, S12, S22, S13, S23, S33, S43, S14, S24: transfer area

S100、S200、S300、S400、S500:步驟 S100, S200, S300, S400, S500: steps

SP:子畫素區 SP: Sub-pixel area

P:畫素區 P: pixel area

圖1繪示本發明一實施例的微型發光二極體顯示裝置的製造方法的步驟流程圖。 FIG. 1 shows a flow chart of a manufacturing method of a micro light emitting diode display device according to an embodiment of the present invention.

圖2A至圖2F繪示本發明一實施例的微型發光二極體顯示裝置的製造方法的局部示意圖。 2A to 2F are partial schematic diagrams of a manufacturing method of a micro light emitting diode display device according to an embodiment of the present invention.

圖3繪示本發明另一實施例的微型發光二極體顯示裝置的局部示意圖。 FIG. 3 is a partial schematic diagram of a micro light emitting diode display device according to another embodiment of the invention.

圖4繪示本發明又一實施例的微型發光二極體顯示裝置的局部示意圖。 FIG. 4 is a partial schematic diagram of a micro light emitting diode display device according to another embodiment of the invention.

圖5繪示本發明再一實施例的微型發光二極體顯示裝置的局部示意圖。 FIG. 5 is a partial schematic diagram of a micro light emitting diode display device according to still another embodiment of the invention.

圖6繪示本發明又另一實施例的微型發光二極體顯示裝置的局部示意圖。 FIG. 6 is a partial schematic diagram of a micro light emitting diode display device according to still another embodiment of the present invention.

圖1繪示本發明一實施例的微型發光二極體顯示裝置的製造方法的步驟流程圖。圖2A至圖2F繪示本發明一實施例的微型發光二極體顯示裝置的製造方法的局部示意圖。 FIG. 1 shows a flow chart of a manufacturing method of a micro light emitting diode display device according to an embodiment of the present invention. 2A to 2F are partial schematic diagrams of a manufacturing method of a micro light emitting diode display device according to an embodiment of the present invention.

在本實施例中，微型發光二極體顯示裝置100的製造方法可以包括以下步驟。應說明的是，如圖2F所示，為求清楚說明，下述每一實施例中皆僅描述微型發光二極體顯示裝置100中的局部放大部分。 In this embodiment, the manufacturing method of the micro light emitting diode display device 100 may include the following steps. It should be noted that, as shown in FIG. 2F, for clarity, each of the following embodiments only describes a partial enlarged part of the micro light emitting diode display device 100.

請同時參照圖1與圖2A，首先，進行步驟S100，藉由轉移頭10拾取多個微型發光二極體，圖2A示意地繪示出十六個微型發光二極體1101。 Please refer to FIGS. 1 and 2A at the same time. First, step S100 is performed to pick up a plurality of micro light emitting diodes by the transfer head 10. FIG. 2A schematically shows sixteen micro light emitting diodes 1101.

在本實施例中，每一微型發光二極體1101可以包括第一型電極111與第二型電極112，其中第一型電極111與第二型電極112的電性可以互不相同。舉例而言，在一實施例中，第一型電極111與第二型電極112可以是p型電極與n型電極的組合。然而，本發明不限於此，在另一實施例中，第一型電極111與第二型電極112可以是n型電極與p型電極的組合。 In this embodiment, each micro light emitting diode 1101 may include a first type electrode 111 and a second type electrode 112, wherein the electrical properties of the first type electrode 111 and the second type electrode 112 may be different from each other. For example, in an embodiment, the first type electrode 111 and the second type electrode 112 may be a combination of a p-type electrode and an n-type electrode. However, the present invention is not limited to this. In another embodiment, the first type electrode 111 and the second type electrode 112 may be a combination of an n-type electrode and a p-type electrode.

在一實施例中，多個微型發光二極體1101可以是陣列排列於轉移頭10的吸附面上。舉例而言，多個微型發光二極體1101 可以是以矩形陣列排列於轉移頭10的吸附面上，以使後續當轉移頭10旋轉180度時可以使相鄰轉移區的邊界上的微型發光二極體具有相近的厚度而改善晶圓上厚度均勻度不佳的問題，其中矩形陣列排列較佳是MxN顆排列，更佳是M

Figure 109128512-A0305-02-0010-3
2N，M與N為正整數，但本發明不限於此，多個微型發光二極體的陣列大小可以視實際設計上的需求而定。 In an embodiment, the plurality of micro light emitting diodes 1101 may be arranged in an array on the adsorption surface of the transfer head 10. For example, a plurality of micro light emitting diodes 1101 may be arranged in a rectangular array on the suction surface of the transfer head 10, so that when the transfer head 10 rotates 180 degrees later, the micro light emitting on the boundary of the adjacent transfer area can be made. The diodes have similar thicknesses to improve the problem of poor thickness uniformity on the wafer. Among them, the rectangular array arrangement is preferably MxN array, more preferably M
Figure 109128512-A0305-02-0010-3
2N, M and N are positive integers, but the present invention is not limited to this, and the size of the array of multiple miniature light-emitting diodes can be determined according to actual design requirements.

在一實施例中，轉移頭10的吸附面可以是轉移頭10朝下的那一面，因此多個微型發光二極體1101可以被轉移頭10所覆蓋，在此，圖2A是採用透視方法繪示。 In an embodiment, the suction surface of the transfer head 10 may be the side of the transfer head 10 facing downwards, so a plurality of micro light emitting diodes 1101 may be covered by the transfer head 10. Here, FIG. 2A is a perspective drawing method. Show.

在一實施例中，每一微型發光二極體1101中的第一型電極111於轉移頭10上可以皆位於下方，而第二型電極112於轉移頭10上可以皆位於上方，但本發明不限於此。 In one embodiment, the first type electrode 111 in each micro light emitting diode 1101 may be all located below on the transfer head 10, and the second type electrode 112 may be all located above on the transfer head 10. However, the present invention Not limited to this.

在一實施例中，可以是藉由轉移頭10的真空、磁吸力或靜電力拾取成長基板的多個微型發光二極體進行轉移，其中成長基板例如是磊晶(epitaxial)基板。然而，本發明不限於此，轉移頭10也可以藉由其他適宜的方式拾取多個微型發光二極體並進行轉移。 In one embodiment, a plurality of micro light emitting diodes of a growth substrate may be picked up by vacuum, magnetic attraction or electrostatic force of the transfer head 10 for transfer, wherein the growth substrate is, for example, an epitaxial substrate. However, the present invention is not limited to this, and the transfer head 10 can also pick up and transfer a plurality of micro light emitting diodes by other suitable methods.

在一些實施例中，微型發光二極體1101例如是第一色光微型發光二極體、第二色光微型發光二極體或第三色光微型發光二極體。舉例而言，第一色光微型發光二極體可以為紅色微型發光二極體，第二色光微型發光二極體可以為綠色微型發光二極 體，且第三色光微型發光二極體可以為藍色微型發光二極體。然而，本發明不限於此，第一色光微型發光二極體、第二色光微型發光二極體以及第三色光微型發光二極體可以視實際設計上的需求去選擇相應色光組合，以達到後續所需的子畫素配置。 In some embodiments, the micro light emitting diode 1101 is, for example, a first color light micro light emitting diode, a second color light micro light emitting diode, or a third color light micro light emitting diode. For example, the first color light micro light emitting diode can be a red micro light emitting diode, and the second color light micro light emitting diode can be a green micro light emitting diode. The third color light micro light emitting diode may be a blue micro light emitting diode. However, the present invention is not limited to this. The first color light micro light emitting diode, the second color light micro light emitting diode, and the third color light micro light emitting diode can be selected according to actual design requirements to select the corresponding color light combination to achieve Sub-pixel configuration required for subsequent steps.

請同時參照圖1、圖2A至圖2B，進行步驟S200，將多個微型發光二極體1101轉移並接合至顯示基板120上，其中顯示基板120具有並鄰的兩個轉移區。舉例而言，例如是將多個微型發光二極體1101轉移並接合至顯示基板120上並鄰的第一轉移區S1與第二轉移區S2，其中第一轉移區S1與第二轉移區S2例如是在第一方向D1上並鄰，但本發明不限於此。在一實施例中，顯示基板120例如是薄膜電晶體(Thin Film Transistor,TFT)陣列基板，但本發明不限於此。 Referring to FIGS. 1 and 2A to 2B at the same time, proceed to step S200 to transfer and bond a plurality of micro light emitting diodes 1101 to the display substrate 120, wherein the display substrate 120 has two adjacent transfer regions. For example, for example, a plurality of micro light emitting diodes 1101 are transferred and bonded to the adjacent first transfer area S1 and the second transfer area S2 on the display substrate 120, wherein the first transfer area S1 and the second transfer area S2 are For example, it is adjacent to each other in the first direction D1, but the present invention is not limited to this. In one embodiment, the display substrate 120 is, for example, a thin film transistor (TFT) array substrate, but the invention is not limited thereto.

顯示基板120上可以包括共用電極線130與多個畫素電極140。在本實施例中，共用電極線130可以是沿第一方向D1延伸穿過第一轉移區S1與第二轉移區S2，多個畫素電極140可以配置於第一轉移區S1與第二轉移區S2內。此外，第一轉移區S1與第二轉移區S2內的每一畫素電極140可以包括上電極141與下電極142，且在第二方向D2上，上電極141與下電極142可以是位於共用電極線130的兩側，其中第二方向D2垂直於第一方向D1。然而，本發明不限於此，在其他實施例中，畫素電極與共用電極線之間基於設計上的需求也可以具有其他的配置方式。 The display substrate 120 may include a common electrode line 130 and a plurality of pixel electrodes 140. In this embodiment, the common electrode line 130 may extend through the first transfer area S1 and the second transfer area S2 along the first direction D1, and a plurality of pixel electrodes 140 may be arranged in the first transfer area S1 and the second transfer area S1. Within area S2. In addition, each pixel electrode 140 in the first transfer area S1 and the second transfer area S2 may include an upper electrode 141 and a lower electrode 142, and in the second direction D2, the upper electrode 141 and the lower electrode 142 may be located in a common On both sides of the electrode line 130, the second direction D2 is perpendicular to the first direction D1. However, the present invention is not limited to this. In other embodiments, the pixel electrode and the common electrode line may have other configurations based on design requirements.

在本實施例中，轉移步驟可以至少包括如下過程。首先，進行步驟S300，將轉移頭10移至兩個轉移區的其一的上方，並將多個微型發光二極體1101的一部分轉移至兩個轉移區的其一。舉例而言，可以是將轉移頭10移至第一轉移區S1的上方，並將微型發光二極體1101的一部分(微型發光二極體110a1)轉移至第一轉移區S1，如將圖2B中轉移頭10的虛線部分微型發光二極體110a1轉移至第一轉移區S1的實線部分微型發光二極體110a1。 In this embodiment, the transfer step may include at least the following process. First, step S300 is performed to move the transfer head 10 above one of the two transfer areas, and transfer a part of the plurality of micro light emitting diodes 1101 to one of the two transfer areas. For example, the transfer head 10 may be moved above the first transfer area S1, and a part of the micro light emitting diode 1101 (the micro light emitting diode 110a1) may be transferred to the first transfer area S1, as shown in FIG. 2B The dotted line part of the micro light emitting diode 110a1 of the middle transfer head 10 is transferred to the solid line part of the micro light emitting diode 110a1 of the first transfer area S1.

請同時參照圖1、圖2B至圖2C，進行步驟S400，移動轉移頭10，將轉移頭旋轉180度對應至兩個轉移區的另一的上方。舉例而言，可以是將轉移頭10旋轉180度對應至第二轉移區S2的上方，其中旋轉例如是順時針或逆時針方向旋轉。然後，進行步驟S500，將多個微型發光二極體1101的另一部分轉移至兩個轉移區的另一，位在兩個轉移區的其一內的微型發光二極體與位在兩個轉移區的另一的微型發光二極體錯位配置。舉例而言，可以是將微型發光二極體1101的另一部分(微型發光二極體110b1)轉移至第二轉移區S2，位在第一轉移區S1內的微型發光二極體110a1錯位於位在第二轉移區S2的微型發光二極體110b1。 Please refer to FIGS. 1 and 2B to 2C at the same time, proceed to step S400, move the transfer head 10, and rotate the transfer head 180 degrees to correspond to the upper side of the other of the two transfer areas. For example, the transfer head 10 may be rotated 180 degrees to correspond to the upper side of the second transfer zone S2, where the rotation is, for example, a clockwise or counterclockwise rotation. Then, proceed to step S500 to transfer the other part of the plurality of micro light-emitting diodes 1101 to the other of the two transfer areas, the micro light-emitting diodes located in one of the two transfer areas and the micro light-emitting diodes located in the two transfer areas The other miniature light-emitting diodes in the area are misaligned. For example, another part of the micro light emitting diode 1101 (the micro light emitting diode 110b1) can be transferred to the second transfer area S2, and the micro light emitting diode 110a1 located in the first transfer area S1 is staggered. The miniature light emitting diode 110b1 in the second transfer area S2.

因此，本實施例在轉移步驟中，當轉移頭10由一轉移區(第一轉移區S1)轉移至另一轉移區(第二轉移區S2)時，將轉移頭10旋轉180度可以較準確的將所需的微型發光二極體(微型發光二極體110a1與微型發光二極體110b1)轉移到預定位置上而形成相 互錯位，以減少轉移頭兩端微型發光二極體因晶圓製程因素導致厚度差異而產生明顯邊界並可以彌補相鄰轉移區(第一轉移區S1與第二轉移區S2)之間的亮度差，因此在顯示基板120運作時，可以具有良好的顯示品質。進一步而言，相鄰的微型發光二極體的差異度最小，當轉移頭10拾取晶圓上數個微型發光二極體後，可知轉移頭10的左端點和右端點上的微型發光二極體，厚度差異最大，因此透過將轉移頭10旋轉180度翻轉能使相鄰兩個轉移區邊界上的微型發光二極體有較相近的厚度，光電特性也會較相近，因此可以具有良好的顯示品質。 Therefore, in the transfer step of this embodiment, when the transfer head 10 is transferred from one transfer zone (first transfer zone S1) to another transfer zone (second transfer zone S2), rotating the transfer head 10 by 180 degrees can be more accurate Transfer the required micro light-emitting diodes (micro light-emitting diode 110a1 and micro light-emitting diode 110b1) to a predetermined position to form a phase Mutual misalignment to reduce the thickness difference of the micro light-emitting diodes at both ends of the transfer head, which results in obvious boundaries and can compensate for the brightness between the adjacent transfer regions (the first transfer region S1 and the second transfer region S2) Therefore, when the display substrate 120 is in operation, it can have a good display quality. Furthermore, the difference between adjacent micro light emitting diodes is the smallest. After the transfer head 10 picks up several micro light emitting diodes on the wafer, it can be seen that the micro light emitting diodes on the left end and the right end of the transfer head 10 The thickness difference is the largest. Therefore, by rotating the transfer head 10 by 180 degrees, the micro light-emitting diodes on the boundary of the two adjacent transfer areas can have similar thicknesses and have similar photoelectric characteristics, so they can have good Display quality.

在本實施例中，前述錯位例如是第一轉移區S1內的微型發光二極體110a1的兩端(如第一型電極111與第二型電極112)可以是分別接合於第一轉移區S1內的共用電極線130與畫素電極140中的上電極141，而第二轉移區S2內的微型發光二極體110b1的兩端(如第一型電極111與第二型電極112)可以是分別接合於第二轉移區S2內的共用電極線130與畫素電極140中的下電極142。換句話說，微型發光二極體110a1的第一型電極111與微型發光二極體110b1的第一型電極111可以接合於共用電極線130。然而，本發明不限於此，在本發明中，只要第一轉移區S1內微型發光二極體與第二轉移區S2內微型發光二極體中的一者接合於畫素電極140中的上電極141，而另一者接合於畫素電極140中的下電極142皆屬於本發明所指稱的錯位配置。 In this embodiment, the aforementioned dislocation is, for example, that the two ends of the micro light emitting diode 110a1 in the first transfer area S1 (such as the first type electrode 111 and the second type electrode 112) may be respectively connected to the first transfer area S1. The inner common electrode line 130 and the upper electrode 141 in the pixel electrode 140, and the two ends of the micro light emitting diode 110b1 in the second transfer area S2 (such as the first type electrode 111 and the second type electrode 112) can be The common electrode line 130 and the lower electrode 142 in the pixel electrode 140 in the second transfer region S2 are respectively joined. In other words, the first type electrode 111 of the micro light emitting diode 110a1 and the first type electrode 111 of the micro light emitting diode 110b1 can be joined to the common electrode line 130. However, the present invention is not limited to this. In the present invention, as long as one of the micro light emitting diodes in the first transfer area S1 and the micro light emitting diodes in the second transfer area S2 is bonded to the upper part of the pixel electrode 140 The electrode 141 and the other lower electrode 142 connected to the pixel electrode 140 belong to the misaligned configuration referred to in the present invention.

此外，在前述過程中所配置的微型發光二極體110a1與微型發光二極體110b1例如是第一色光微型發光二極體，因此在第一方向D1上，位在兩個轉移區的其一內的第一色光微型發光二極體可以不重疊於位在兩個轉移區的另一內的第一色光微型發光二極體，在此態樣下也屬於本發明所指稱的錯位。 In addition, the micro light emitting diode 110a1 and the micro light emitting diode 110b1 configured in the foregoing process are, for example, the first color light micro light emitting diode, so in the first direction D1, they are located in the other of the two transfer areas. The first color light micro light emitting diode in one may not overlap with the first color light micro light emitting diode located in the other of the two transfer regions. In this aspect, it also belongs to the misalignment referred to in the present invention. .

在一實施例中，轉移頭10可以是具有並列的第一邊緣10e1與第二邊緣10e2，其中例如是於第一方向D1上並列。換句話說，轉移頭10可以具有相對的第一邊緣10e1與第二邊緣10e2。進一步而言，在步驟S300與步驟S500中，第一邊緣10e1可以重疊於兩個轉移區的其一與兩個轉移區的另一之間的交界。舉例而言，可以是第一邊緣10e1可以是重疊於第一轉移區S1與第二轉移區S2之間的交界B。換句話說，第一邊緣10e1於轉移頭10旋轉的之前或之後重疊於同一個位置上。 In an embodiment, the transfer head 10 may have a first edge 10e1 and a second edge 10e2 that are juxtaposed, for example, they are juxtaposed in the first direction D1. In other words, the transfer head 10 may have a first edge 10e1 and a second edge 10e2 opposite to each other. Furthermore, in step S300 and step S500, the first edge 10e1 may overlap the boundary between one of the two transfer areas and the other of the two transfer areas. For example, it may be that the first edge 10e1 may overlap the boundary B between the first transfer area S1 and the second transfer area S2. In other words, the first edge 10e1 overlaps at the same position before or after the transfer head 10 rotates.

在一實施例中，轉移頭10的旋轉可以是在將轉移頭10移至兩個轉移區的另一的上方之前或之後完成。進一步而言，可以是先將轉移頭10進行旋轉，再將轉移頭10由第一轉移區S1移至第二轉移區S2上方，或者，先將轉移頭10由第一轉移區S1移至第二轉移區S2上方，再將轉移頭10進行旋轉。 In an embodiment, the rotation of the transfer head 10 may be completed before or after the transfer head 10 is moved above the other of the two transfer areas. Furthermore, the transfer head 10 may be rotated first, and then the transfer head 10 may be moved from the first transfer area S1 to above the second transfer area S2, or the transfer head 10 may be first moved from the first transfer area S1 to the second transfer area S2. Above the second transfer area S2, the transfer head 10 is rotated.

請同時參照圖1、圖2C至圖2F，在本實施例中，顯示基板120還可以具有在第二方向D2上分別並鄰於第一轉移區S1與第二轉移區S2的第三轉移區S3與第四轉移區S4。此外，前述共 用電極線130與多個畫素電極140可以視為一組，而可以更包括另一組配置於顯示基板120上的共用電極線130與多個畫素電極140。進一步而言，另一組共用電極線130與多個畫素電極140中的共用電極線130可以是沿第一方向D1延伸穿過第三轉移區S3與第四轉移區S4，而另一組共用電極線130與多個畫素電極140中的多個畫素電極140配置於第三轉移區S3與第四轉移區S4內。 Referring to FIGS. 1 and 2C to 2F at the same time, in this embodiment, the display substrate 120 may also have a third transfer area in the second direction D2 and adjacent to the first transfer area S1 and the second transfer area S2. S3 and the fourth transfer area S4. In addition, the aforementioned total The electrode line 130 and the plurality of pixel electrodes 140 may be regarded as a group, and may further include another group of the common electrode line 130 and the plurality of pixel electrodes 140 disposed on the display substrate 120. Furthermore, another group of common electrode lines 130 and common electrode lines 130 of the plurality of pixel electrodes 140 may extend through the third transfer area S3 and the fourth transfer area S4 along the first direction D1, and the other set The common electrode line 130 and the plurality of pixel electrodes 140 of the plurality of pixel electrodes 140 are disposed in the third transfer area S3 and the fourth transfer area S4.

接著，可以重複步驟S300至步驟S500，以進一步將其他的微型發光二極體110c1與微型發光二極體110d1依序配置於第三轉移區S3(如圖2D所示)與第四轉移區S4(如圖2E所示)上。然後，可以將轉移頭10從第四轉移區S4上移開(未繪示)。據此，經由上述過程已將多個微型發光二極體1101(微型發光二極體110a1、微型發光二極體110b1、微型發光二極體110c1與微型發光二極體110d1)分別配置於顯示基板120的第一轉移區S1、第二轉移區S2、第三轉移區S3與第四轉移區S4內。換句話說，多個微型發光二極體1101(微型發光二極體110a1、微型發光二極體110b1、微型發光二極體110c1與微型發光二極體110d1)可以分別於第一轉移區S1、第二轉移區S2、第三轉移區S3與第四轉移區S4內以各別形成子畫素區SP。 Then, steps S300 to S500 can be repeated to further arrange other micro light emitting diodes 110c1 and micro light emitting diodes 110d1 in the third transfer area S3 (as shown in FIG. 2D) and the fourth transfer area S4 in sequence. (As shown in Figure 2E) on. Then, the transfer head 10 can be moved away from the fourth transfer area S4 (not shown). Accordingly, through the above process, a plurality of micro light emitting diodes 1101 (micro light emitting diode 110a1, micro light emitting diode 110b1, micro light emitting diode 110c1, and micro light emitting diode 110d1) have been respectively arranged on the display substrate 120 in the first transfer area S1, the second transfer area S2, the third transfer area S3, and the fourth transfer area S4. In other words, a plurality of micro light emitting diodes 1101 (micro light emitting diode 110a1, micro light emitting diode 110b1, micro light emitting diode 110c1, and micro light emitting diode 110d1) can be located in the first transfer area S1, respectively. The second transfer area S2, the third transfer area S3, and the fourth transfer area S4 respectively form sub-pixel areas SP.

在一實施例中，轉移頭10的面積可以等於任一轉移區的面積。舉例而言，可以是轉移頭10的吸附面的面積等於第一轉移區S1、第二轉移區S2、第三轉移區S3與第四轉移區S4任一中的 面積。然而，本發明不限於此，轉移頭10的面積可以視實際需求進行調整。 In an embodiment, the area of the transfer head 10 may be equal to the area of any transfer area. For example, the area of the adsorption surface of the transfer head 10 may be equal to any one of the first transfer zone S1, the second transfer zone S2, the third transfer zone S3, and the fourth transfer zone S4. area. However, the present invention is not limited to this, and the area of the transfer head 10 can be adjusted according to actual needs.

應說明的是，本發明不限於圖2A至圖2E中轉移區與微型發光二極體的數量、轉移次數、轉移順序與轉移方向，只要位在兩個轉移區的其一內的微型發光二極體錯位於位在兩個轉移區的另一的微型發光二極體皆屬於本發明的保護範圍。舉例而言，在未繪示的實施例中，也可以是重複步驟S300至步驟S500，以將微型發光二極體的其一配置於第一轉移區S1內，而將微型發光二極體的另一配置於第三轉移區S3且形成相互錯位。 It should be noted that the present invention is not limited to the number of transfer areas and micro light-emitting diodes in FIGS. 2A to 2E, the number of transfers, the transfer sequence and the transfer direction, as long as the two micro-light emitting diodes are located in one of the two transfer areas. The miniature light-emitting diode whose polar body is misplaced in the other of the two transfer regions belongs to the protection scope of the present invention. For example, in an embodiment not shown, steps S300 to S500 may be repeated to arrange one of the micro light emitting diodes in the first transfer area S1, and the micro light emitting diodes The other is disposed in the third transfer area S3 and is mutually offset.

請參照圖2F，在前述過程中所配置的微型發光二極體110a1、微型發光二極體110b1、微型發光二極體110c1與微型發光二極體110d1例如是第一色光微型發光二極體110a1、第一色光微型發光二極體110b1、第一色光微型發光二極體110c1與第一色光微型發光二極體110d1，因此可以繼續重複步驟S100至步驟S500，將多個第二色光微型發光二極體110a2、第二色光微型發光二極體110b2、第二色光微型發光二極體110c2與第二色光微型發光二極體110d2依序分別配置於顯示基板120的第一轉移區S1、第二轉移區S2、第三轉移區S3與第四轉移區S4中。 2F, the micro light emitting diode 110a1, micro light emitting diode 110b1, micro light emitting diode 110c1, and micro light emitting diode 110d1 configured in the foregoing process are, for example, the first color light micro light emitting diode 110a1, the first color light micro light emitting diode 110b1, the first color light micro light emitting diode 110c1 and the first color light micro light emitting diode 110d1, so you can continue to repeat step S100 to step S500, and combine multiple second The color light micro light emitting diode 110a2, the second color light micro light emitting diode 110b2, the second color light micro light emitting diode 110c2, and the second color light micro light emitting diode 110d2 are respectively arranged in the first transfer area of the display substrate 120 in sequence S1, the second transfer area S2, the third transfer area S3, and the fourth transfer area S4.

接著，繼續重複步驟S100至步驟S500，將多個第三色光微型發光二極體110a3、第三色光微型發光二極體110b3、第三色光微型發光二極體110c3與第三色光微型發光二極體110d3依序 分別配置於顯示基板120的第一轉移區S1、第二轉移區S2、第三轉移區S3與第四轉移區S4中，以使每一轉移區內可以皆具有至少一第一色光微型發光二極體、至少一第二色光微型發光二極體以及至少一第三色光微型發光二極體。 Then, continue to repeat step S100 to step S500 to combine a plurality of third color light micro light emitting diodes 110a3, third color light micro light emitting diodes 110b3, third color light micro light emitting diodes 110c3 and third color light micro light emitting diodes Body 110d3 in sequence They are respectively arranged in the first transfer area S1, the second transfer area S2, the third transfer area S3, and the fourth transfer area S4 of the display substrate 120, so that each transfer area can have at least one first color light micro-luminescence Diode, at least one second color light micro light emitting diode and at least one third color light micro light emitting diode.

進一步而言，位在第一轉移區S1內的第一色光微型發光二極體110a1、第二色光微型發光二極體110a2與第三色光微型發光二極體110a3可以沿第一方向D1排列成一直線，位在第二轉移區S2內的第一色光微型發光二極體110b1、第二色光微型發光二極體110b2與第三色光微型發光二極體110b3可以沿第一方向D1排列成另一直線，位在第三轉移區S3內的第一色光微型發光二極體110c1、第二色光微型發光二極體110c2與第三色光微型發光二極體110c3可以沿第一方向D1排列成又一直線，位在第四轉移區S4內的第一色光微型發光二極體110d1、第二色光微型發光二極體110d2與第三色光微型發光二極體110d3可以沿第一方向D1排列成再一直線，其中相鄰兩轉移區內所形成的直線在第一方向D1上相互錯位，如第一轉移區S1與第二轉移區S2內的所形成的直線在第一方向D1上相互錯位，而第三轉移區S3與第四轉移區S4內的所形成的直線在第一方向D1上相互錯位。 Furthermore, the first color light micro light emitting diode 110a1, the second color light micro light emitting diode 110a2, and the third color light micro light emitting diode 110a3 located in the first transfer area S1 may be arranged along the first direction D1 In a straight line, the first color light micro light emitting diode 110b1, the second color light micro light emitting diode 110b2, and the third color light micro light emitting diode 110b3 located in the second transfer area S2 can be arranged along the first direction D1. Another straight line, the first color light micro light emitting diode 110c1, the second color light micro light emitting diode 110c2, and the third color light micro light emitting diode 110c3 located in the third transfer area S3 can be arranged along the first direction D1. In another straight line, the first color light micro light emitting diode 110d1, the second color light micro light emitting diode 110d2, and the third color light micro light emitting diode 110d3 located in the fourth transfer area S4 can be arranged in the first direction D1. A straight line, wherein the straight lines formed in two adjacent transfer areas are misaligned in the first direction D1, for example, the straight lines formed in the first transfer zone S1 and the second transfer zone S2 are misaligned in the first direction D1, The straight lines formed in the third transfer area S3 and the fourth transfer area S4 are misaligned in the first direction D1.

據此，第一轉移區S1中的微型發光二極體110a1、微型發光二極體110a2與微型發光二極體110a3可以構成第一微型發光元件110a，第二轉移區S2中微型發光二極體110b1、微型發光二 極體110b2與微型發光二極體110b3可以構成第二微型發光元件110b，第三轉移區S3中微型發光二極體110c1、微型發光二極體110c2與微型發光二極體110c3可以構成第三微型發光元件110c，而第四轉移區S4中微型發光二極體110d1、微型發光二極體110d2與微型發光二極體110d3可以構成第四微型發光元件110d，以使第一轉移區S1、第二轉移區S2、第三轉移區S3與第四轉移區S4可以分別形成多個畫素區P。 Accordingly, the micro light emitting diode 110a1, the micro light emitting diode 110a2, and the micro light emitting diode 110a3 in the first transfer area S1 can form the first micro light emitting element 110a, and the micro light emitting diode in the second transfer area S2 110b1, miniature light-emitting two The pole body 110b2 and the micro light emitting diode 110b3 can form the second micro light emitting element 110b, and the micro light emitting diode 110c1, the micro light emitting diode 110c2 and the micro light emitting diode 110c3 in the third transfer area S3 can form the third micro light emitting diode. The light emitting element 110c, and the micro light emitting diode 110d1, the micro light emitting diode 110d2, and the micro light emitting diode 110d3 in the fourth transfer area S4 can form the fourth micro light emitting element 110d, so that the first transfer area S1, the second The transfer area S2, the third transfer area S3, and the fourth transfer area S4 may respectively form a plurality of pixel areas P.

在第一方向D1上，並鄰的兩轉移區(例如第一轉移區S1與第二轉移區S2)內的微型發光元件(例如第一微型發光元件110a與第二微型發光元件110b)具有相同色光。進一步來說，第一微型發光元件110a與第二微型發光元件110b皆包含至少三個不同色光的微型發光二極體，在第一方向D1上，第一微型發光元件110a的三個不同色光的微型發光二極體的排序與第二微型發光元件110b的三個不同色光的微型發光二極體的排序一致。 In the first direction D1, the micro light-emitting elements (such as the first micro light-emitting element 110a and the second micro light-emitting element 110b) in the two adjacent transfer regions (such as the first transfer region S1 and the second transfer region S2) have the same Shade. Furthermore, the first micro light-emitting element 110a and the second micro light-emitting element 110b both include at least three micro light-emitting diodes of different colors. In the first direction D1, the first micro light-emitting element 110a has three different colors of light. The order of the micro light-emitting diodes is consistent with the order of the three micro light-emitting diodes of different colors of the second micro light-emitting element 110b.

請參照圖2F，在本實施例中，一種微型發光二極體顯示裝置100，包括顯示基板120。顯示基板120具有並鄰的第一轉移區S1與第二轉移區S2。第一轉移區S1與第二轉移區S2內皆包括多個畫素區P。第一微型發光元件110a沿第一方向D1排列成一直線。第二微型發光元件110b沿第一方向D1排列成另一直線，在第一方向D1上，第一微型發光元件110a與第二微型發光元件110b錯位配置，因此可以彌補相鄰轉移區(如第一轉移區S1與第 二轉移區S2)之間的亮度差，使顯示基板120運作時，可以具有良好的顯示品質。 2F, in this embodiment, a miniature light emitting diode display device 100 includes a display substrate 120. The display substrate 120 has a first transfer area S1 and a second transfer area S2 adjacent to each other. Both the first transfer area S1 and the second transfer area S2 include a plurality of pixel areas P. The first micro light emitting elements 110a are arranged in a straight line along the first direction D1. The second micro light-emitting elements 110b are arranged in another straight line along the first direction D1. In the first direction D1, the first micro light-emitting elements 110a and the second micro light-emitting elements 110b are misaligned, so that they can make up for adjacent transfer areas (such as the first Transfer area S1 and section The brightness difference between the two transfer regions S2) enables the display substrate 120 to have a good display quality during operation.

進一步而言，第一微型發光元件110a與第二微型發光元件110b可以皆包括第一型電極111與第二型電極112，且第一微型發光元件110a的第一型電極111與第二微型發光元件110b的第一型電極111接合於共用電極線130。此外，第一微型發光元件110a的兩端(第一型電極111與第二型電極112)可以分別接合於共用電極線130與第一轉移區S1內的畫素電極140中的上電極141，且第二微型發光元件110b的兩端(第一型電極111與第二型電極112)可以分別接合於共用電極線130與第二轉移區S2內的畫素電極140中的下電極142。 Furthermore, the first micro light emitting element 110a and the second micro light emitting element 110b may both include a first type electrode 111 and a second type electrode 112, and the first type electrode 111 and the second micro light emitting element of the first micro light emitting element 110a The first type electrode 111 of the element 110b is joined to the common electrode line 130. In addition, both ends of the first micro light emitting element 110a (the first type electrode 111 and the second type electrode 112) can be respectively connected to the common electrode line 130 and the upper electrode 141 of the pixel electrode 140 in the first transfer region S1, The two ends of the second micro light-emitting element 110b (the first type electrode 111 and the second type electrode 112) can be respectively connected to the common electrode line 130 and the lower electrode 142 of the pixel electrode 140 in the second transfer area S2.

請參照圖2A至圖2F，若微型發光二極體接合於共用電極線130與畫素電極140中的上電極141，則同一畫素電極140中的下電極142作為修補區101。一旦經檢測後發現既存的微型發光二極體損壞，則可轉移相同色光的另一顆微型發光二極體至修補區101，並使該顆微型發光二極體合於共用電極線130與同一畫素電極140中的下電極142。反之，若微型發光二極體接合於共用電極線130與畫素電極140中的下電極142，則同一畫素電極140中的上電極141作為修補區101。一旦經檢測後發現既存的微型發光二極體損壞，則可轉移相同色光的另一顆微型發光二極體至修補區101，並使該顆微型發光二極體合於共用電極線130與同一畫 素電極140中的上電極141。然而，本發明不限於此，也可以藉由其他適宜的方式進行修補。 2A to 2F, if the micro light emitting diode is connected to the upper electrode 141 in the common electrode line 130 and the pixel electrode 140, the lower electrode 142 in the same pixel electrode 140 serves as the repair area 101. Once the existing micro light emitting diode is found to be damaged after inspection, another micro light emitting diode of the same color light can be transferred to the repair area 101, and the micro light emitting diode can be combined with the common electrode line 130 and the same The bottom electrode 142 in the pixel electrode 140. Conversely, if the micro light emitting diode is joined to the lower electrode 142 in the common electrode line 130 and the pixel electrode 140, the upper electrode 141 in the same pixel electrode 140 serves as the repair area 101. Once the existing micro light emitting diode is found to be damaged after inspection, another micro light emitting diode of the same color light can be transferred to the repair area 101, and the micro light emitting diode can be combined with the common electrode line 130 and the same painting The upper electrode 141 in the element electrode 140. However, the present invention is not limited to this, and it can be repaired in other suitable ways.

圖3繪示本發明另一實施例的微型發光二極體顯示裝置的局部示意圖。請參照圖3，相較於微型發光二極體顯示裝置100而言，本實施例的微型發光二極體顯示裝置200包括配置於顯示基板120上的第一共用電極線2301、第二共用電極線2302以及多個畫素電極240，其中第一共用電極線2301平行於第二共用電極線2302，且第一共用電極線2301與第二共用電極線2302沿第一方向D1延伸穿過第一轉移區S12與第二轉移區S22，畫素電極240可以陣列設置於所第一轉移區S12與第二轉移區S22，其中每一畫素電極240位於第一共用電極線2301與第二共用電極線2302之間，且每一畫素電極240可以包括向第一共用電極線2301延伸的上電極241與向第二共用電極線2302延伸的下電極242。 FIG. 3 is a partial schematic diagram of a micro light emitting diode display device according to another embodiment of the invention. 3, compared with the micro light emitting diode display device 100, the micro light emitting diode display device 200 of this embodiment includes a first common electrode line 2301 and a second common electrode disposed on the display substrate 120 Line 2302 and a plurality of pixel electrodes 240, wherein the first common electrode line 2301 is parallel to the second common electrode line 2302, and the first common electrode line 2301 and the second common electrode line 2302 extend through the first common electrode line 2301 and the second common electrode line 2302 in the first direction D1. In the transfer area S12 and the second transfer area S22, the pixel electrodes 240 can be arranged in an array in the first transfer area S12 and the second transfer area S22, wherein each pixel electrode 240 is located in the first common electrode line 2301 and the second common electrode Between the lines 2302, and each pixel electrode 240 may include an upper electrode 241 extending to the first common electrode line 2301 and a lower electrode 242 extending to the second common electrode line 2302.

進一步而言，第一微型發光元件210a的兩端(第一型電極211與第二型電極112)可以分別接合於第二共用電極線2302與第一轉移區S12內的畫素電極240中的下電極242，且第二微型發光元件210b的兩端(第一型電極211與第二型電極112)可以分別連接第一共用電極線2301與第二轉移區S22內的畫素電極240中的上電極241，其中第一共用電極線2301與第二共用電極線2302可以沿第二方向D2排列，但本發明不限於此。 Furthermore, both ends of the first micro light emitting element 210a (the first type electrode 211 and the second type electrode 112) can be respectively connected to the second common electrode line 2302 and the pixel electrode 240 in the first transfer region S12. The bottom electrode 242, and the two ends of the second micro light emitting element 210b (the first type electrode 211 and the second type electrode 112) can be respectively connected to the first common electrode line 2301 and the pixel electrode 240 in the second transfer region S22 The upper electrode 241, in which the first common electrode line 2301 and the second common electrode line 2302 may be arranged along the second direction D2, but the present invention is not limited thereto.

此外，在本實施例中，如圖3所示，微型發光二極體顯 示裝置200可以更包括配置於顯示基板120上的第三共用電極線2303以及其他畫素電極240。舉例而言，第三共用電極線2303、第一共用電極線2301與第二共用電極線2302可以沿第二方向D2排列，且另一第一微型發光元件210a的兩端(第一型電極211與第二型電極112)可以分別接合於第一共用電極線2301與第一轉移區S12內的其他畫素電極240中的下電極242，且第二微型發光元件210b的兩端(第一型電極211與第二型電極112)分別連接第三共用電極線2303與第二轉移區S22內的其他畫素電極240中的上電極241，但本發明不限於此。 In addition, in this embodiment, as shown in FIG. 3, the miniature light-emitting diode display The display device 200 may further include a third common electrode line 2303 and other pixel electrodes 240 disposed on the display substrate 120. For example, the third common electrode line 2303, the first common electrode line 2301, and the second common electrode line 2302 can be arranged along the second direction D2, and the two ends of the other first micro light emitting element 210a (the first type electrode 211 And the second type electrode 112) can be respectively connected to the first common electrode line 2301 and the lower electrode 242 of the other pixel electrode 240 in the first transfer area S12, and the two ends of the second micro light-emitting element 210b (first type The electrode 211 and the second type electrode 112) are respectively connected to the third common electrode line 2303 and the upper electrode 241 of the other pixel electrodes 240 in the second transfer area S22, but the present invention is not limited to this.

圖4繪示本發明又一實施例的微型發光二極體顯示裝置的局部示意圖。請參照圖4，相較於微型發光二極體顯示裝置100而言，本實施例的微型發光二極體顯示裝置300的第三轉移區S33與第四轉移區S43的交界B2在第一方向D1上偏移於第一轉移區S13與第二轉移區S23的交界B1。進一步而言，第三轉移區S33上的第三微型發光元件310c在第二方向D2上可以對準第二轉移區S22上的第二微型發光元件310b。 FIG. 4 is a partial schematic diagram of a micro light emitting diode display device according to another embodiment of the invention. 4, compared with the micro light emitting diode display device 100, the boundary B2 of the third transfer area S33 and the fourth transfer area S43 of the micro light emitting diode display device 300 of this embodiment is in the first direction D1 is offset from the boundary B1 of the first transfer area S13 and the second transfer area S23. Furthermore, the third micro light emitting element 310c on the third transfer area S33 can be aligned with the second micro light emitting element 310b on the second transfer area S22 in the second direction D2.

第二微型發光元件310b的數量與第三微型發光元件310c的數量可以為多個(圖4中示意地繪示出三個)。在本實施例中，一個第三微型發光元件310c在第二方向D2上可以對準一個第二微型發光元件310b。換句話說，第二轉移區S23與第三轉移區S33可以皆包括多個畫素區，且第二轉移區S23內的一個畫素區在第 二方向D2上可以對準第三轉移區S33內的一個畫素區。在此，對準可以為一對一的方式。 The number of the second micro light-emitting elements 310b and the number of the third micro light-emitting elements 310c may be multiple (three are schematically shown in FIG. 4). In this embodiment, one third micro light emitting element 310c can be aligned with one second micro light emitting element 310b in the second direction D2. In other words, the second transfer area S23 and the third transfer area S33 may both include a plurality of pixel areas, and one pixel area in the second transfer area S23 is in the first transfer area S23. A pixel area in the third transfer area S33 can be aligned in the two directions D2. Here, the alignment can be one-to-one.

圖5繪示本發明再一實施例的微型發光二極體顯示裝置的局部示意圖。請參照圖5，相較於微型發光二極體顯示裝置300而言，本實施例的微型發光二極體顯示裝置300a具有較大的偏移量，換句話說，可以是兩個第三微型發光元件310c在第二方向D2上可以對準兩個第二微型發光元件310b。換句話說，第二轉移區S23內的兩個畫素區在第二方向D2上可以對準第三轉移區S33內的兩個畫素區。 FIG. 5 is a partial schematic diagram of a micro light emitting diode display device according to still another embodiment of the invention. 5, compared with the micro light emitting diode display device 300, the micro light emitting diode display device 300a of this embodiment has a larger offset, in other words, it can be two third micro The light emitting element 310c may be aligned with two second micro light emitting elements 310b in the second direction D2. In other words, the two pixel areas in the second transfer area S23 can be aligned with the two pixel areas in the third transfer area S33 in the second direction D2.

應說明的是，本發明不限制第三微型發光元件310c在第二方向D2上與第二微型發光元件310b的對準數量或第二轉移區S23內的畫素區在第二方向D2上與對準第三轉移區S33內的畫素區的對準數量，上述對準數量可以視偏移量的設計需求而定，舉例而言，對準數量可以是大於兩個。 It should be noted that the present invention does not limit the number of alignments of the third micro light emitting element 310c with the second micro light emitting element 310b in the second direction D2 or the pixel area in the second transfer area S23 and the second direction D2. For the alignment number of the pixel regions in the third transfer region S33, the above alignment number can be determined according to the design requirements of the offset, for example, the alignment number can be more than two.

圖6繪示本發明又另一實施例的微型發光二極體顯示裝置的局部示意圖。請參照圖6，本實施例的微型發光二極體顯示裝置400可以應用於無源驅動尋址模式(PM mode)。在本實施例中，微型發光二極體顯示裝置400，也可以包括顯示基板420、第一微型發光元件410a以及第二微型發光元件410b。顯示基板420具有並鄰的第一轉移區S14與第二轉移區S24。第一微型發光元件410a配置於第一轉移區S14內，且沿第一方向D1排列成一直線。第二 微型發光元件410b配置於第二轉移區S24內，且沿第一方向D1排列成另一直線，在第一方向D1上，第一微型發光元件410a不重疊於第二微型發光元件410b，因此可以彌補相鄰轉移區(如第一轉移區S14與第二轉移區S24)之間的亮度差，使顯示基板420運作時，可以具有良好的顯示品質。 FIG. 6 is a partial schematic diagram of a micro light emitting diode display device according to still another embodiment of the present invention. Please refer to FIG. 6, the micro light emitting diode display device 400 of this embodiment can be applied to a passive driving addressing mode (PM mode). In this embodiment, the micro light emitting diode display device 400 may also include a display substrate 420, a first micro light emitting element 410a, and a second micro light emitting element 410b. The display substrate 420 has a first transfer area S14 and a second transfer area S24 adjacent to each other. The first micro light-emitting elements 410a are disposed in the first transfer area S14, and are arranged in a straight line along the first direction D1. second The micro light-emitting elements 410b are arranged in the second transfer region S24, and are arranged in another straight line along the first direction D1. In the first direction D1, the first micro light-emitting elements 410a do not overlap with the second micro light-emitting elements 410b, so it can compensate The brightness difference between adjacent transfer regions (such as the first transfer region S14 and the second transfer region S24) enables the display substrate 420 to have a good display quality during operation.

綜上所述，本發明在轉移步驟中，當轉移頭由一轉移區轉移至另一轉移區時，將轉移頭旋轉180度可以較準確的將所需的微型發光二極體轉移到預定位置上而形成相互錯位，以減少轉移頭兩端微型發光二極體因晶圓製程因素導致厚度差異而產生明顯邊界並彌補相鄰轉移區之間的亮度差，因此在顯示基板運作時，可以具有良好的顯示品質。 In summary, in the transfer step of the present invention, when the transfer head is transferred from one transfer area to another transfer area, rotating the transfer head 180 degrees can more accurately transfer the required miniature light-emitting diodes to the predetermined position. Displacement between the two ends of the transfer head is formed to reduce the thickness difference of the micro light-emitting diodes at both ends of the transfer head. Good display quality.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be subject to those defined by the attached patent application scope.

100:微型發光二極體顯示裝置 101:修補區 110a1、110a2、110a3、110b1、110b2、110b3、110c1、110c2、110c3、110d1、110d2、110d3:微型發光二極體 110a、110b、110c、110d:微型發光元件 111:第一型電極 112:第二型電極 120:顯示基板 130:共用電極線 D1、D2:方向 S1、S2、S3、S4:轉移區 P:畫素區 100: Miniature LED display device 101: Repair Area 110a1, 110a2, 110a3, 110b1, 110b2, 110b3, 110c1, 110c2, 110c3, 110d1, 110d2, 110d3: miniature light-emitting diode 110a, 110b, 110c, 110d: micro light emitting element 111: The first type electrode 112: The second type electrode 120: display substrate 130: Common electrode line D1, D2: direction S1, S2, S3, S4: transfer area P: pixel area

Claims (18)

一種微型發光二極體顯示裝置的製造方法，包括：藉由轉移頭拾取多個微型發光二極體；以及將所述多個微型發光二極體轉移並接合至顯示基板上，其中所述顯示基板具有並鄰的兩個轉移區，且轉移步驟包括：(a)將所述轉移頭移至所述兩個轉移區的其一的上方，並將所述多個微型發光二極體的一部分轉移至所述兩個轉移區的其一；(b)移動所述轉移頭，將所述轉移頭旋轉180度對應至所述兩個轉移區的另一的上方；以及(c)將所述多個微型發光二極體的另一部分轉移至所述兩個轉移區的另一，位在所述兩個轉移區的其一內的所述微型發光二極體與位在所述兩個轉移區的另一的所述微型發光二極體錯位設置。 A method for manufacturing a micro light emitting diode display device includes: picking up a plurality of micro light emitting diodes by a transfer head; and transferring and bonding the plurality of micro light emitting diodes to a display substrate, wherein the display The substrate has two adjacent transfer areas, and the transfer step includes: (a) moving the transfer head above one of the two transfer areas, and placing a part of the plurality of micro light-emitting diodes Transfer to one of the two transfer areas; (b) move the transfer head and rotate the transfer head 180 degrees to correspond to above the other of the two transfer areas; and (c) move the The other part of the plurality of micro light emitting diodes is transferred to the other of the two transfer areas, the micro light emitting diodes located in one of the two transfer areas and the micro light emitting diodes located in the two transfer areas The micro light-emitting diodes in the other of the regions are arranged in a staggered manner. 如請求項1所述的微型發光二極體顯示裝置的製造方法，其中所述多個微型發光二極體包括多個第一色光微型發光二極體、多個第二色光微型發光二極體或多個第三色光微型發光二極體，且重複所述步驟(a)至所述步驟(c)，以使所述兩個轉移區的其一內具有至少一所述第一色光微型發光二極體、至少一所述第二色光微型發光二極體以及至少一所述第三色光微型發光二極體，並使所述兩個轉移區的另一內具有至少一所述第一色光微型 發光二極體、至少一所述第二色光微型發光二極體以及至少一所述第三色光微型發光二極體。 The method for manufacturing a micro light emitting diode display device according to claim 1, wherein the plurality of micro light emitting diodes includes a plurality of first color light micro light emitting diodes and a plurality of second color light micro light emitting diodes Body or a plurality of third color light micro light-emitting diodes, and repeat the steps (a) to (c), so that one of the two transfer regions has at least one of the first color light Micro light emitting diodes, at least one of the second color light micro light emitting diodes, and at least one of the third color light micro light emitting diodes, and the other of the two transfer regions has at least one of the first One color light mini Light emitting diodes, at least one of the second color light micro light emitting diodes, and at least one of the third color light micro light emitting diodes. 如請求項2所述的微型發光二極體顯示裝置的製造方法，其中位在所述兩個轉移區的其一內的所述第一色光微型發光二極體、所述第二色光微型發光二極體與所述第三色光微型發光二極體沿第一方向排列成一直線，且位在所述兩個轉移區的另一內的所述第一色光微型發光二極體、所述第二色光微型發光二極體與所述第三色光微型發光二極體沿所述第一方向排列成另一直線，在所述第一方向上，位在所述兩個轉移區的其一內的所述第一色光微型發光二極體不重疊於位在所述兩個轉移區的另一內的所述第一色光微型發光二極體。 The method for manufacturing a micro light emitting diode display device according to claim 2, wherein the first color light micro light emitting diode and the second color light micro light emitting diode are located in one of the two transfer regions. The light emitting diode and the third color light micro light emitting diode are arranged in a straight line along the first direction, and the first color light micro light emitting diode and the light emitting diode are located in the other of the two transfer areas. The second color light micro light emitting diode and the third color light micro light emitting diode are arranged in another straight line along the first direction, and are located in one of the two transfer areas in the first direction The first color light micro light emitting diode inside does not overlap with the first color light micro light emitting diode located in the other of the two transfer regions. 如請求項1所述的微型發光二極體顯示裝置的製造方法，其中所述轉移頭具有並列的第一邊緣與第二邊緣，在所述步驟(a)與所述步驟(c)中，所述第一邊緣重疊於所述兩個轉移區的其一與所述兩個轉移區的另一之間的交界。 The method for manufacturing a micro light emitting diode display device according to claim 1, wherein the transfer head has a first edge and a second edge that are juxtaposed, and in the step (a) and the step (c), The first edge overlaps the junction between one of the two transfer areas and the other of the two transfer areas. 如請求項1所述的微型發光二極體顯示裝置的製造方法，其中在所述步驟(b)中，所述轉移頭的旋轉是在將所述轉移頭移至所述兩個轉移區的另一的上方之前或之後完成。 The method for manufacturing a micro light emitting diode display device according to claim 1, wherein in the step (b), the rotation of the transfer head is to move the transfer head to the two transfer areas Finish before or after the other above. 如請求項1所述的微型發光二極體顯示裝置的製造方法，其中所述轉移頭的面積等於任一所述轉移區的面積。 The method for manufacturing a micro light emitting diode display device according to claim 1, wherein the area of the transfer head is equal to the area of any one of the transfer regions. 如請求項1所述的微型發光二極體顯示裝置的製造方法，其中所述轉移頭用以拾取MxN個所述微型發光二極體，且M
Figure 109128512-A0305-02-0027-4
2N。 The method for manufacturing a micro light emitting diode display device according to claim 1, wherein the transfer head is used to pick up M×N of the micro light emitting diodes, and M
Figure 109128512-A0305-02-0027-4
2N. 一種微型發光二極體顯示裝置，包括：顯示基板，具有並鄰的第一轉移區與第二轉移區，所述第一轉移區與所述第二轉移區內皆包括多個畫素區，其中：所述第一轉移區內的至少一所述畫素區包括第一微型發光元件，沿第一方向排列成一直線；所述第二轉移區內的至少一所述畫素區包括第二微型發光元件，沿所述第一方向排列成另一直線，在所述第一方向上，所述第一微型發光元件與所述第二微型發光元件錯位設置，且所述第一微型發光元件與所述第二微型發光元件具有相同色光；以及共用電極線，配置於所述顯示基板上，並沿所述第一方向延伸穿過所述第一轉移區與所述第二轉移區。 A miniature light-emitting diode display device includes a display substrate having a first transfer area and a second transfer area adjacent to each other, and both the first transfer area and the second transfer area include a plurality of pixel areas, Wherein: at least one of the pixel areas in the first transfer area includes first micro light-emitting elements arranged in a line along a first direction; at least one of the pixel areas in the second transfer area includes a second The micro light-emitting elements are arranged in another straight line along the first direction. In the first direction, the first micro light-emitting elements and the second micro light-emitting elements are arranged in a staggered manner, and the first micro light-emitting elements and The second micro light-emitting elements have the same color light; and a common electrode line is disposed on the display substrate and extends through the first transfer area and the second transfer area along the first direction. 如請求項8所述的微型發光二極體顯示裝置，其中所述第一微型發光元件與所述第二微型發光元件皆包括第一型電極與第二型電極，且所述第一微型發光元件的所述第一型電極與所述第二微型發光元件的所述第一型電極接合於所述共用電極線。 The micro light emitting diode display device according to claim 8, wherein the first micro light emitting element and the second micro light emitting element both include a first type electrode and a second type electrode, and the first micro light emitting element The first-type electrode of the element and the first-type electrode of the second micro light-emitting element are joined to the common electrode line. 如請求項8所述的微型發光二極體顯示裝置，更包括：多個畫素電極，配置於所述第一轉移區與所述第二轉移區 內，其中每一所述畫素電極包括上電極與下電極，在垂直於所述第一方向的第二方向上，所述上電極與所述下電極位於所述共用電極線的兩側。 The micro light-emitting diode display device according to claim 8, further comprising: a plurality of pixel electrodes arranged in the first transfer area and the second transfer area Inside, each of the pixel electrodes includes an upper electrode and a lower electrode, and in a second direction perpendicular to the first direction, the upper electrode and the lower electrode are located on both sides of the common electrode line. 如請求項10所述的微型發光二極體顯示裝置，其中所述第一微型發光元件的兩端分別接合於所述共用電極線與所述第一轉移區內的所述畫素電極中的所述上電極，且所述第二微型發光元件的兩端分別接合於所述共用電極線與所述第二轉移區內的所述畫素電極中的所述下電極。 The micro light emitting diode display device according to claim 10, wherein both ends of the first micro light emitting element are respectively joined to the common electrode line and the pixel electrode in the first transfer area The upper electrode and both ends of the second micro light-emitting element are respectively connected to the common electrode line and the lower electrode of the pixel electrode in the second transfer area. 如請求項8所述的微型發光二極體顯示裝置，更包括配置於所述顯示基板上的第一共用電極線、第二共用電極線以及多個畫素電極，其中所述第一共用電極線平行於所述第二共用電極線，且所述第一共用電極線與所述第二共用電極線沿所述第一方向延伸穿過所述第一轉移區與所述第二轉移區，所述畫素電極陣列設置於所述第一轉移區與所述第二轉移區，其中每一所述畫素電極位於所述第一共用電極線與所述第二共用電極線之間，且每一所述畫素電極包括向所述第一共用電極線延伸的上電極與向所述第二共用電極線延伸的下電極。 The micro light emitting diode display device according to claim 8, further comprising a first common electrode line, a second common electrode line, and a plurality of pixel electrodes arranged on the display substrate, wherein the first common electrode The line is parallel to the second common electrode line, and the first common electrode line and the second common electrode line extend in the first direction through the first transfer area and the second transfer area, The pixel electrode array is disposed in the first transfer area and the second transfer area, wherein each pixel electrode is located between the first common electrode line and the second common electrode line, and Each of the pixel electrodes includes an upper electrode extending toward the first common electrode line and a lower electrode extending toward the second common electrode line. 如請求項12所述的微型發光二極體顯示裝置，其中所述第一微型發光元件的兩端分別接合於所述第二共用電極線與所述第一轉移區內的所述畫素電極中的所述下電極，且所述第 二微型發光元件的兩端分別連接所述第一共用電極線與所述第二轉移區內的所述畫素電極中的所述上電極。 The micro light emitting diode display device according to claim 12, wherein both ends of the first micro light emitting element are respectively joined to the second common electrode line and the pixel electrode in the first transfer area The lower electrode in the, and the first Two ends of the two micro light-emitting elements are respectively connected to the first common electrode line and the upper electrode of the pixel electrode in the second transfer area. 如請求項12所述的微型發光二極體顯示裝置，其中所述第一共用電極線與所述第二共用電極線沿垂直於所述第一方向的第二方向排列。 The micro light emitting diode display device according to claim 12, wherein the first common electrode line and the second common electrode line are arranged along a second direction perpendicular to the first direction. 如請求項8所述的微型發光二極體顯示裝置，其中所述顯示基板更包括第三轉移區與第四轉移區，在垂直於所述第一方向的第二方向上分別並鄰於所述第一轉移區與所述第二轉移區，且所述第三轉移區與所述第四轉移區的交界在所述第一方向上偏移於所述第一轉移區與所述第二轉移區的交界。 The micro light emitting diode display device according to claim 8, wherein the display substrate further includes a third transfer area and a fourth transfer area, which are respectively adjacent to and adjacent to the third transfer area and the fourth transfer area in the second direction perpendicular to the first direction. The first transfer area and the second transfer area, and the boundary between the third transfer area and the fourth transfer area is offset from the first transfer area and the second transfer area in the first direction The junction of the transfer area. 如請求項15所述的微型發光二極體顯示裝置，其中所述第三轉移區包括第三微型發光元件，且所述第三微型發光元件在所述第二方向上對準所述第二微型發光元件。 The micro light emitting diode display device according to claim 15, wherein the third transfer area includes a third micro light emitting element, and the third micro light emitting element is aligned with the second micro light emitting element in the second direction. Miniature light-emitting elements. 如請求項16所述的微型發光二極體顯示裝置，其中所述第二微型發光元件的數量與所述第三微型發光元件的數量為多個，且至少一所述第三微型發光元件在所述第二方向上對準至少一所述第二微型發光元件。 The micro light-emitting diode display device according to claim 16, wherein the number of the second micro light-emitting elements and the number of the third micro light-emitting elements are multiple, and at least one of the third micro light-emitting elements is At least one of the second micro light-emitting elements is aligned in the second direction. 如請求項17所述的微型發光二極體顯示裝置，其中所述第三轉移區包括多個畫素區，且所述第二轉移區內的至少一所述畫素區在所述第二方向上對準所述第三轉移區內的至少一所述畫素區。 The micro light-emitting diode display device according to claim 17, wherein the third transfer area includes a plurality of pixel areas, and at least one of the pixel areas in the second transfer area is in the second Aligning at least one pixel area in the third transfer area in the direction.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101051648A (en) * 2006-06-30 2007-10-10 友达光电股份有限公司 Organic lighting element color pixel array mode and its forming method
US20120027341A1 (en) * 2010-07-27 2012-02-02 Kabushiki Kaisha Toshiba Light emitting device and optical transmission system
TWI676286B (en) * 2018-12-05 2019-11-01 英屬開曼群島商錼創科技股份有限公司 Micro led display device and manufacturing method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010251360A (en) * 2009-04-10 2010-11-04 Sony Corp Method of manufacturing display and display
KR101983691B1 (en) * 2012-08-17 2019-05-30 삼성디스플레이 주식회사 Light blocking member and display panel including the same
CN103886809B (en) * 2014-02-21 2016-03-23 北京京东方光电科技有限公司 Display packing and display device
JP2018060993A (en) * 2016-09-29 2018-04-12 東レエンジニアリング株式会社 Transfer method, mounting method, transfer device, and mounting device
CN106783892B (en) * 2017-02-15 2019-05-21 京东方科技集团股份有限公司 A kind of array substrate, display panel and display device
CN108630726A (en) * 2017-03-21 2018-10-09 宸鸿光电科技股份有限公司 Organic LED display device
CN109389910B (en) * 2017-08-03 2021-06-08 英属开曼群岛商錼创科技股份有限公司 Micro light-emitting diode display panel
KR101900925B1 (en) * 2017-11-20 2018-09-21 엘지디스플레이 주식회사 Growth substrate having micro light emitting diode chip and method for manufacturing light emitting diode display device using the same
CN107993583B (en) * 2017-11-27 2019-09-17 武汉华星光电技术有限公司 Micro-led display device and preparation method thereof
TWI661585B (en) * 2017-12-21 2019-06-01 財團法人工業技術研究院 Light emitting diode package
TWI648879B (en) * 2018-04-11 2019-01-21 友達光電股份有限公司 Light-emitting element
CN109378370B (en) * 2018-12-05 2020-08-25 合肥京东方光电科技有限公司 Transfer equipment of micro LED, manufacturing system and manufacturing method of display substrate
CN109599411B (en) * 2018-12-07 2019-09-24 广东工业大学 A kind of controllable dispersion and transfer method for the transfer of Micro-LED flood tide
CN110034218B (en) * 2019-04-19 2021-03-12 成都辰显光电有限公司 Miniature LED chip and display panel
CN110400861B (en) * 2019-07-30 2020-11-20 上海天马有机发光显示技术有限公司 Preparation method of display panel, display panel and display device
CN110491896B (en) * 2019-08-16 2022-01-04 錼创显示科技股份有限公司 Micro light emitting device display device and method of manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101051648A (en) * 2006-06-30 2007-10-10 友达光电股份有限公司 Organic lighting element color pixel array mode and its forming method
US20120027341A1 (en) * 2010-07-27 2012-02-02 Kabushiki Kaisha Toshiba Light emitting device and optical transmission system
TWI676286B (en) * 2018-12-05 2019-11-01 英屬開曼群島商錼創科技股份有限公司 Micro led display device and manufacturing method thereof

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