TWI743285B - Integrated silicon wafer capable of being attached to objects and manufacturing method thereof - Google Patents

Integrated silicon wafer capable of being attached to objects and manufacturing method thereof Download PDF

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TWI743285B
TWI743285B TW106146585A TW106146585A TWI743285B TW I743285 B TWI743285 B TW I743285B TW 106146585 A TW106146585 A TW 106146585A TW 106146585 A TW106146585 A TW 106146585A TW I743285 B TWI743285 B TW I743285B
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melt adhesive
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adhesive layer
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TW201930087A (en
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張文耀
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張文耀
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Abstract

一種可貼附於物件上之整合矽片及其製造方法,該整合矽片包含一矽膠層;一熱熔膠層,主要包含一高溫熱熔膠層,位在該矽膠層的下方,且應用架橋劑黏附到該矽膠層;一低溫熱熔膠層,黏附在該高溫熱熔膠層的下方;其中該高溫熱熔膠層由第一形成溫度加熱熱熔膠所形成;該低溫熱熔膠層由第二形成溫度加熱熱熔膠所形成,其中該第二形成溫度低於該第一形成溫度。其中該整合矽片尚包含一位在該低溫熱熔膠層下方的物件層;其結合方式係為將上述之矽膠層與該熱熔膠層整合而成的材料應用熱熔的方式貼合到該物件層上;係將該矽膠層與該熱熔膠層整合的材料加溫到該第二形成溫度,使得該低溫熱熔膠層在該第二形成溫度下會經由融化而與該物件層結合。 An integrated silicon wafer that can be attached to an object and a manufacturing method thereof. The integrated silicon wafer includes a silicon layer; A bridging agent is applied to adhere to the silicone layer; a low-temperature hot-melt adhesive layer is adhered below the high-temperature hot-melt adhesive layer; wherein the high-temperature hot-melt adhesive layer is formed by heating the hot melt at the first forming temperature; the The low-temperature hot melt adhesive layer is formed by heating the hot melt adhesive at a second forming temperature, wherein the second forming temperature is lower than the first forming temperature. The integrated silicon wafer also includes an object layer below the low-temperature hot-melt adhesive layer; the bonding method is that the above-mentioned silicon layer and the hot-melt adhesive layer are integrated to apply hot-melt bonding. Onto the object layer; the material that integrates the silicone layer and the hot melt adhesive layer is heated to the second forming temperature, so that the low-temperature hot melt adhesive layer will melt with the second forming temperature at the second forming temperature. Object layer combination.

Description

可貼附於物件上之整合矽片及其製造方法 Integrated silicon wafer capable of being attached to objects and manufacturing method thereof

本發明係有關於矽膠結構,尤其是一種可貼附於物件上之整合矽片及其製造方法。 The present invention relates to a silicon structure, in particular to an integrated silicon chip that can be attached to an object and a manufacturing method thereof.

傳統上在衣服上面形成商標或標語等圖案,主要是應用塑化材料裁剪成所需要的型態,然後將該塑化材料應用熱熔膠與衣服結合。一般塑化材料的融解度低,所以在較高的溫度下,極有可能揮發出塑化劑及鹵素化合物,這些揮發的塑化劑及鹵素化合物可以經由呼吸器官或者皮膚的接觸而深入人體,因此影響使用者的健康。而衣服為人們所必須穿著者,而且是形成近身的接觸。所以當使用塑化材料做商標或標語時,將會使得穿戴者受到該塑化材料的感染。再者塑化材料也容易變黃變脆,所以影響使用壽命。 Traditionally, patterns such as trademarks or slogans are formed on clothes, mainly by using plasticized materials to be cut into the desired shape, and then using hot melt glue to combine the plasticized materials with the clothes. Generally, the melting degree of plasticized materials is low, so at higher temperatures, it is very likely to volatilize plasticizers and halogen compounds. These volatile plasticizers and halogen compounds can penetrate into the human body through contact with respiratory organs or skin. Therefore, the health of the user is affected. The clothes are necessary for people to wear, and they form close contact. Therefore, when plasticized materials are used as trademarks or slogans, the wearer will be infected by the plasticized materials. In addition, plasticized materials are also easy to turn yellow and become brittle, so the service life is affected.

鑒於上述使用塑化材料的缺點,所以歐盟或其他先進國家已研擬禁止在衣服上應用塑化材料形成商標或標語。矽膠由於具有高度的安定性及熱固性,必須在極高的溫度下才有可能形變或焚毀,所以使用矽膠做成商標或標語便成為可以 取代的一種方式。 In view of the above-mentioned shortcomings of using plasticized materials, the European Union or other advanced countries have proposed to prohibit the use of plasticized materials to form trademarks or slogans on clothes. Silicone has a high degree of stability and thermosetting properties, and it must be deformed or burnt at extremely high temperatures. Therefore, it is possible to use silicone to make a trademark or slogan. A way to replace.

應用矽膠材料形成商標或標語的方式係使用各種顏色的液態矽膠,然後應用微量射出的方式,在耐高溫材料上成型所需要的商標或圖案,經加熱烘烤後裁下,再以布料對布料縫製或貼合的方式固定在服飾表面。此種方式最大的缺點為無法應用模具大量製造,再者生產製程慢,相對地也影響產量及成本及所需要的人工。 The method of using silicone material to form a trademark or slogan is to use liquid silicone of various colors, and then apply a small amount of injection method to form the required trademark or pattern on the high temperature resistant material, and then cut it off after heating and baking, and then use the cloth to the cloth Sewing or fitting is fixed on the surface of the clothing. The biggest disadvantage of this method is that it cannot be used for mass manufacturing of molds, and the production process is slow, which relatively affects the output, cost, and labor required.

如果要將矽膠直接貼合在衣服上,其最大的問題是因為矽膠必須在高溫下才會固化,而此高溫並非布料所能承受者,所以此高溫製程將破壞布料,所以無法應用矽膠直接在布料上形成商標或標語等各式圖案。 If you want to apply silicone directly to clothes, the biggest problem is that the silicone must be cured at a high temperature, and this high temperature is not what the fabric can withstand. Therefore, the high temperature process will damage the fabric, so it is impossible to apply silicone directly to the fabric. Various patterns such as trademarks or slogans are formed on the fabric.

故本案希望提出一種嶄新的以矽材為基礎,而在布料或其他物件上可以形成商標或標語的方式,以解決上述先前技術上所遭遇的問題。 Therefore, this case hopes to propose a new way of using silicon as the basis to form a trademark or slogan on cloth or other objects to solve the above-mentioned problems encountered in the prior art.

所以本發明的目的係為解決上述習知技術上的問題,本發明中提出一種可貼附於物件上之整合矽片,係將矽膠下方配置一熱熔膠層,而該熱熔膠層為包含高溫熱熔膠層及低溫熱熔膠層的雙層結構。應用該高溫熱熔膠層使得熱熔膠層可 以與矽膠結合,應用該低溫熱熔膠層使得該熱熔膠層可以與物件如布料結合。所以解決了矽膠無法直接與布料結合的技術上的問題。而且本案中使用矽膠為材料,可以經由模具大量形成所需要的各種圖案再應用熱轉印的方式轉印到布料上,整體生產速度較快而且成本低。再者矽膠材料本身化性穩定,必須在250℃以上才會形變,而且不是熱塑性材料,所以對環境的影響遠低於傳統的塑化材料。這也就是各國政府為何可以接受矽材取代塑化材料的主要原因。 Therefore, the purpose of the present invention is to solve the above-mentioned conventional technical problems. In the present invention, an integrated silicon wafer that can be attached to an object is provided. A double-layer structure including a high-temperature hot-melt adhesive layer and a low-temperature hot-melt adhesive layer. The application of the high-temperature hot melt adhesive layer makes the hot melt adhesive layer In order to combine with silicone, the application of the low-temperature hot-melt adhesive layer enables the hot-melt adhesive layer to be combined with objects such as cloth. Therefore, the technical problem that silicone cannot be directly combined with cloth is solved. Moreover, the silicone rubber is used as the material in this case, which can be used to form a large number of required patterns through a mold and then transfer to the fabric by means of thermal transfer. The overall production speed is faster and the cost is low. In addition, the silicone material itself is stable, and must be deformed above 250°C, and it is not a thermoplastic material, so its impact on the environment is much lower than that of traditional plasticized materials. This is the main reason why governments of various countries can accept silicon to replace plasticized materials.

為達到上述目的本發明中提出一種可貼附於物件上之整合矽片,包含一矽膠層;一熱熔膠層,主要包含:一高溫熱熔膠層,位在該矽膠層的下方,且應用架橋劑黏附到該矽膠層;一低溫熱熔膠層,黏附在該高溫熱熔膠層的下方;其中該高溫熱熔膠層由第一形成溫度加熱熱熔膠所形成;該低溫熱熔膠層由第二形成溫度加熱熱熔膠所形成,其中該第二形成溫度低於該第一形成溫度。 In order to achieve the above objective, the present invention proposes an integrated silicon wafer that can be attached to an object, including a silicon layer; And applying a bridging agent to adhere to the silicone layer; a low-temperature hot-melt adhesive layer adhered below the high-temperature hot-melt adhesive layer; wherein the high-temperature hot-melt adhesive layer is formed by heating the hot melt at the first forming temperature; The low-temperature hot melt adhesive layer is formed by heating the hot melt adhesive at a second forming temperature, wherein the second forming temperature is lower than the first forming temperature.

本案尚提出一種可貼附於物件上之整合矽片的製造方法,包含下列步驟:步驟A:將一批次的熱熔膠,融化到第一形成溫度而形成薄片狀型態的高溫熱熔膠層;並將另一批次的熱熔膠,融化到第二形成溫度且形成薄片狀型態的低溫熱熔膠層,其中該第二形成溫度低於該第一形成溫度;然後將該高溫熱熔膠層結合該低溫熱熔膠層,而形成一整體的熱熔膠 層,其中位在上方的是該高溫熱熔膠層,位在下方的是該低溫熱熔膠層;步驟B:將該高溫熱熔膠層的上方塗上一層架橋劑,然後在該架橋劑的上方塗抹一層矽膠材料;步驟C:接著將該熱熔膠層的上方加熱到該第一形成溫度,因此使得該熱熔膠層上方的高溫熱熔膠層表面融化,而融化位在其上方的該架橋劑,因此該架橋劑將引導該高溫熱熔膠層上表面處的熱熔膠材質融化而滲入該矽膠材料中,因此使得該高溫熱熔膠層與該矽膠材料結合;步驟D:將溫度緩慢降低至室溫,因此上方的矽膠材料將形成一矽膠層;且在該高溫熱熔膠層與該矽膠層之間形成一黏合帶,該黏合帶的材料主要是由該高溫熱熔膠層、該矽膠材料、及該架橋劑混合而成;因此使得該矽膠層經由該架橋劑而與該熱熔膠層緊密結合,而形成具有熱熔整合能力的矽材整合層。 This case also proposes a method for manufacturing an integrated silicon wafer that can be attached to an object, which includes the following steps: Step A: Melt a batch of hot melt adhesive to the first forming temperature to form a sheet-like high-temperature heat Melt adhesive layer; and melt another batch of hot melt adhesive to a second forming temperature and form a low-temperature hot melt adhesive layer in a thin form, wherein the second forming temperature is lower than the first forming temperature; then The high temperature hot melt adhesive layer is combined with the low temperature hot melt adhesive layer to form an integral hot melt adhesive Layer, where the high temperature hot melt adhesive layer is located above, and the low temperature hot melt adhesive layer is located below; Step B: apply a layer of bridging agent on top of the high temperature hot melt adhesive layer, and then Apply a layer of silicone material on top of the bridging agent; Step C: Then heat the top of the hot melt adhesive layer to the first forming temperature, so that the surface of the high-temperature hot melt adhesive layer above the hot melt adhesive layer melts and melts The bridging agent located above it will guide the hot-melt adhesive material on the upper surface of the high-temperature hot-melt adhesive layer to melt and penetrate into the silicone material, so that the high-temperature hot-melt adhesive layer and the silicone Material combination; Step D: slowly lower the temperature to room temperature, so the silicone material above will form a silicone layer; and an adhesive tape is formed between the high-temperature hot melt adhesive layer and the silicone layer, the material of the adhesive tape It is mainly formed by mixing the high-temperature hot-melt adhesive layer, the silicone material, and the bridging agent; therefore, the silicone layer is closely combined with the hot-melt adhesive layer through the bridging agent to form a hot-melt integration capability Silicon integrated layer.

由下文的說明可更進一步瞭解本發明的特徵及其優點,閱讀時並請參考附圖。 The features and advantages of the present invention can be further understood from the following description, and please refer to the accompanying drawings when reading.

1‧‧‧矽材整合層 1‧‧‧Silicon integrated layer

2‧‧‧物件 2‧‧‧Object

3‧‧‧物件層 3‧‧‧Object layer

4‧‧‧片狀結構 4‧‧‧Flake structure

10‧‧‧矽膠層 10‧‧‧Silicone layer

20‧‧‧熱熔膠層 20‧‧‧Hot Melt Adhesive Layer

21‧‧‧高溫熱熔膠層 21‧‧‧High temperature hot melt adhesive layer

22‧‧‧低溫熱熔膠層 22‧‧‧Low temperature hot melt adhesive layer

30‧‧‧架橋劑 30‧‧‧Bridge Agent

40‧‧‧黏合帶 40‧‧‧Adhesive tape

200‧‧‧矽膠材料 200‧‧‧Silicone material

300‧‧‧標示 300‧‧‧mark

301‧‧‧型態 301‧‧‧Type

圖1顯示本案之元件組合示意圖。 Figure 1 shows a schematic diagram of the component assembly in this case.

圖2顯示本案之高溫熱熔膠層及低溫熱熔膠層之示意圖。 Figure 2 shows a schematic diagram of the high-temperature hot-melt adhesive layer and the low-temperature hot-melt adhesive layer of this case.

圖3顯示本案之高溫熱熔膠層及低溫熱熔膠層結合後所形成之熱熔膠層之示意圖。 FIG. 3 shows a schematic diagram of the hot melt adhesive layer formed after the high temperature hot melt adhesive layer and the low temperature hot melt adhesive layer are combined in this case.

圖4顯示本案之高溫熱熔膠層上方塗上架橋劑及在該架橋劑上方塗抹矽膠材料之示意圖。 Fig. 4 shows a schematic diagram of applying a bridging agent on the top of the high-temperature hot melt adhesive layer and applying a silicone material on the bridging agent in this case.

圖5顯示本案中在熱熔膠層上方進行加熱之示意圖。 Figure 5 shows a schematic diagram of heating above the hot melt adhesive layer in this case.

圖6顯示本案之矽膠層、黏合帶、高溫熱熔膠層及低溫熱熔膠層之組合示意圖。 Figure 6 shows a schematic diagram of the combination of the silicone layer, adhesive tape, high-temperature hot-melt adhesive layer and low-temperature hot-melt adhesive layer in this case.

圖7顯示本案之製程步驟流程圖。 Figure 7 shows the process flow chart of this case.

圖8顯示本案之矽膠層、熱熔膠層及物件層之組合示意圖。 FIG. 8 shows a schematic diagram of the combination of the silicone layer, the hot melt adhesive layer and the object layer in this case.

圖9顯示本案之矽膠層及熱熔膠層整合於物件層之一應用例。 Figure 9 shows an application example of the silicon layer and the hot melt adhesive layer integrated into the object layer in this case.

圖10顯示本案之矽膠層及熱熔膠層整合於物件層之另一應用例。 FIG. 10 shows another application example in which the silicone layer and the hot melt adhesive layer are integrated on the object layer in this case.

圖11顯示本案之應用之一實施例。 Figure 11 shows an embodiment of the application of this case.

圖12顯示本案之應用之另一實施例。 Figure 12 shows another embodiment of the application of this case.

茲謹就本案的結構組成,及所能產生的功效與優點,配合圖式,舉本案之一較佳實施例詳細說明如下。 With regard to the structural composition of this case, and the effects and advantages that can be produced, in conjunction with the drawings, a preferred embodiment of this case is described in detail as follows.

請參考圖1至圖12所示,顯示本發明之可貼附於物件上之整合矽片,包含下列元件: 一矽膠層10;一熱熔膠層20(如圖1所示),主要包含:一高溫熱熔膠層21,位在該矽膠層10的下方,且應用架橋劑黏附到該矽膠層10。 Please refer to FIG. 1 to FIG. 12, which show the integrated silicon chip that can be attached to an object of the present invention, including the following components: A silicone layer 10; a hot melt adhesive layer 20 (as shown in FIG. 1), which mainly includes: a high temperature hot melt adhesive layer 21, located below the silicone layer 10, and adhered to the silicone layer 10 with a bridging agent .

一低溫熱熔膠層22,黏附在該高溫熱熔膠層21的下方。 A low-temperature hot-melt adhesive layer 22 adheres under the high-temperature hot-melt adhesive layer 21.

其中該高溫熱熔膠層21由第一形成溫度加熱熱熔膠所形成。該低溫熱熔膠層22由第二形成溫度加熱熱熔膠所形成,其中該第二形成溫度低於該第一形成溫度。 The high-temperature hot-melt adhesive layer 21 is formed by heating the hot-melt adhesive at the first forming temperature. The low-temperature hot melt adhesive layer 22 is formed by heating the hot melt at a second forming temperature, wherein the second forming temperature is lower than the first forming temperature.

其中該高溫熱熔膠層21與該矽膠層10之間形成一黏合帶40,該黏合帶40的材料主要是由該高溫熱熔膠層21、該矽膠層10、及該架橋劑混合而成。 An adhesive tape 40 is formed between the high-temperature hot-melt adhesive layer 21 and the silicone layer 10, and the material of the adhesive tape 40 is mainly composed of the high-temperature hot-melt adhesive layer 21, the silicone layer 10, and the bridging agent. Become.

本案中較佳者該架橋劑30為聚矽氧烷(polysiloxan),而該熱熔膠層20的材料較佳者為熱塑性聚氨酯(thermoplastic polyurethane)。 In this case, the bridging agent 30 is preferably polysiloxan, and the material of the hot melt adhesive layer 20 is preferably thermoplastic polyurethane.

其中該第一形成溫度介於120℃到200℃之間,而該第二形成溫度介於60℃到150℃之間。其中該第一形成溫度高於該第二形成溫度10℃到60℃。 The first forming temperature is between 120°C and 200°C, and the second forming temperature is between 60°C and 150°C. The first forming temperature is 10°C to 60°C higher than the second forming temperature.

如圖8所示,本案尚包含一位在該低溫熱熔膠層22下方 的物件層3;其中該物件層3在該第二形成溫度下不會融化或產生不可接受之變形;其結合方式係為將該矽膠層10與該熱熔膠層20整合而成的材料應用熱熔的方式貼合到該物件層3上;係將該矽膠層10與該熱熔膠層20整合的材料加溫到該第二形成溫度,使得該低溫熱熔膠層22在該第二形成溫度下會經由融化而與該物件層3結合。 As shown in Figure 8, this case also includes a position under the low-temperature hot melt adhesive layer 22 The object layer 3; wherein the object layer 3 will not melt or produce unacceptable deformation at the second forming temperature; the combination method is the application of a material that integrates the silicone layer 10 and the hot melt adhesive layer 20 It is attached to the object layer 3 by hot melt; the material integrated with the silicone layer 10 and the hot melt adhesive layer 20 is heated to the second forming temperature, so that the low temperature hot melt adhesive layer 22 is on the first Second, it will be combined with the object layer 3 through melting at the forming temperature.

如圖9所示,其中可將該矽膠層10與該熱熔膠層20整合的材料預先切割成一特定的型態301;再將整個型態301貼合在該物件層3上。其中該型態301可為文字、商標、廣告內容、警語等等。 As shown in FIG. 9, the material that integrates the silicon layer 10 and the hot melt adhesive layer 20 can be cut into a specific pattern 301 in advance; and then the entire pattern 301 is attached to the object layer 3. The type 301 can be text, trademark, advertisement content, warning, etc.

如圖10所示,該矽膠層10與該熱熔膠層20整合的材料也可以整合於該物件層3後做為防水或防滑之用。圖中係顯示將該矽膠層10與該熱熔膠層20整合的材料預先切割成一特定型態的片狀結構4再貼附到該物件層3上。 As shown in FIG. 10, the integrated material of the silicone layer 10 and the hot melt adhesive layer 20 can also be integrated into the object layer 3 for waterproof or non-slip purpose. The figure shows that the material integrated with the silicon glue layer 10 and the hot melt glue layer 20 is pre-cut into a specific type of sheet structure 4 and then attached to the object layer 3.

較佳者該物件層3的構成材料為布料、橡膠、金屬、塑膠等等。更佳者該布料為衣服上的布料。 Preferably, the constituent material of the object layer 3 is cloth, rubber, metal, plastic and so on. Preferably, the cloth is cloth on clothes.

如圖7所示,本案之可貼附於物件上之整合矽片的製造方法包含下列步驟:將一批次的熱熔膠,融化到第一形成溫度而形成薄片狀型態的高溫熱熔膠層21。並將另一批次的熱熔膠,融化到第 二形成溫度且形成薄片狀型態的低溫熱熔膠層22(如圖2所示),其中該第二形成溫度低於該第一形成溫度。然後將該高溫熱熔膠層21結合該低溫熱熔膠層22,而形成一整體的熱熔膠層20(如圖3所示);其中位在上方的是該高溫熱熔膠層21,位在下方的是該低溫熱熔膠層22(步驟900)。其中該第一形成溫度介於120℃到200℃之間,而該第二形成溫度介於60℃到150℃之間。其中該第一形成溫度高於該第二形成溫度10℃到60℃。 As shown in Figure 7, the manufacturing method of an integrated silicon wafer that can be attached to an object in this case includes the following steps: melt a batch of hot melt adhesive to the first forming temperature to form a thin-shaped high-temperature heat Melt layer 21. And melt another batch of hot melt adhesive to the first 2. Forming temperature and forming a sheet-like low-temperature hot melt adhesive layer 22 (as shown in FIG. 2), wherein the second forming temperature is lower than the first forming temperature. Then the high-temperature hot-melt adhesive layer 21 is combined with the low-temperature hot-melt adhesive layer 22 to form an integral hot-melt adhesive layer 20 (as shown in FIG. 3); of which the high-temperature hot-melt adhesive is positioned above The layer 21 is located below the low-temperature hot melt adhesive layer 22 (step 900). The first forming temperature is between 120°C and 200°C, and the second forming temperature is between 60°C and 150°C. The first forming temperature is 10°C to 60°C higher than the second forming temperature.

其中該高溫熱熔膠層21及該低溫熱熔膠層22可以分別形成後再結合成該熱熔膠層20,或者是先形成該高溫熱熔膠層21,然後將熱熔膠材料灌注在該高溫熱熔膠層21上而應用溫度的改變形成該低溫熱熔膠層22,整體形成該熱熔膠層20。 The high-temperature hot-melt adhesive layer 21 and the low-temperature hot-melt adhesive layer 22 may be formed separately and then combined into the hot-melt adhesive layer 20, or the high-temperature hot-melt adhesive layer 21 may be formed first, and then the hot-melt adhesive layer The material is poured on the high-temperature hot-melt adhesive layer 21 and the temperature change is applied to form the low-temperature hot-melt adhesive layer 22, and the hot-melt adhesive layer 20 is formed as a whole.

因為該高溫熱熔膠層21及該低溫熱熔膠層22的形成溫度不相同,雖然同樣由熱熔膠所形成,但是因為形成溫度不同,所以其物理性質也不同。上層的高溫熱熔膠層21會在高溫下融解,而下層的低溫熱熔膠層22會在低溫下融解。 Because the high-temperature hot-melt adhesive layer 21 and the low-temperature hot-melt adhesive layer 22 are formed at different temperatures, although they are also formed of hot-melt adhesive, their physical properties are also different because of the different forming temperatures. The upper high temperature hot melt adhesive layer 21 will melt at a high temperature, while the lower low temperature hot melt adhesive layer 22 will melt at a low temperature.

將該高溫熱熔膠層21的上方塗上一層架橋劑30,然後在該架橋劑30的上方塗抹一層矽膠材料200,如圖4所示(步驟902)。較佳者該架橋劑30為聚矽氧烷(polysiloxan),而該熱熔膠層20的材料較佳者為熱塑性聚氨酯(thermoplastic polyurethane)。 A layer of bridging agent 30 is coated on the top of the high-temperature hot melt adhesive layer 21, and then a layer of silicone material 200 is coated on the top of the bridging agent 30, as shown in FIG. 4 (step 902). Preferably, the bridging agent 30 is polysiloxan, and the material of the hot melt adhesive layer 20 is preferably thermoplastic polyurethane (thermoplastic polyurethane). polyurethane).

接著將該熱熔膠層20的上方加熱到該第一形成溫度(如圖5所示),因此使得該熱熔膠層20上方的高溫熱熔膠層21表面融化,而融化位在其上方的該架橋劑30,因此該架橋劑30將引導該高溫熱熔膠層21上表面處的熱熔膠材質融化而滲入該矽膠材料200中,因此使得該高溫熱熔膠層21與該矽膠材料200結合(步驟903)。 Then the upper part of the hot melt adhesive layer 20 is heated to the first forming temperature (as shown in FIG. 5), so that the surface of the high-temperature hot melt adhesive layer 21 above the hot melt adhesive layer 20 is melted, and the melting is located thereon. The bridging agent 30 above, therefore, the bridging agent 30 will guide the hot-melt adhesive material on the upper surface of the high-temperature hot-melt adhesive layer 21 to melt and penetrate into the silicone material 200, thereby making the high-temperature hot-melt adhesive layer 21 and The silicone material 200 is bonded (step 903).

將溫度緩慢降低至室溫,因此上方的矽膠材料200將形成一矽膠層10(如圖6所示)。且在該高溫熱熔膠層21與該矽膠層10之間形成一黏合帶40,該黏合帶40的材料主要是由該高溫熱熔膠層21、該矽膠材料200、及該架橋劑30混合而成。因此使得該矽膠層10經由該架橋劑30而與該熱熔膠層20緊密結合,而形成具有熱熔整合能力的矽材整合層1(步驟904)。 The temperature is slowly lowered to room temperature, so the silicone material 200 above will form a silicone layer 10 (as shown in FIG. 6). And an adhesive tape 40 is formed between the high-temperature hot-melt adhesive layer 21 and the silicone layer 10. The material of the adhesive tape 40 is mainly composed of the high-temperature hot-melt adhesive layer 21, the silicone material 200, and the bridging agent 30 mixed. Therefore, the silicon glue layer 10 is tightly combined with the hot melt glue layer 20 through the bridging agent 30 to form a silicon material integration layer 1 with hot melt integration capability (step 904).

本案中最主要的應用是該矽材整合層1應用熱熔的方式得以貼合到所需要的物件上。其中該物件在該第二形成溫度下不會融化或產生不可接受之變形。 The main application in this case is that the silicon integrated layer 1 can be attached to the required object by hot melt. The object will not melt or produce unacceptable deformation at the second forming temperature.

其方式為將該矽材整合層1加溫到該第二形成溫度,因此使得該矽材整合層1下方的低溫熱熔膠層22在該第二形成溫度下會經由融化而與該物件結合。而該矽材整合層1的其他材質在該第二形成溫度下並不會融化或產生不可接受之變 形,因此不會破壞材質。 The method is to heat the silicon material integrated layer 1 to the second forming temperature, so that the low-temperature hot melt adhesive layer 22 under the silicon material integrated layer 1 will melt with the object at the second forming temperature. Combine. The other materials of the silicon integrated layer 1 will not melt or produce unacceptable changes at the second forming temperature. Shape, so it will not damage the material.

有關上述的矽材整合層1與布的整合,可以使用在多種實際的應用中。 The above-mentioned integration of the silicon material integration layer 1 and the cloth can be used in a variety of practical applications.

其中一實施例係將該矽材整合層1整體切割成一特定的標示300(如圖11所示),其可為文字、商標、廣告內容、警語等等。然後再根據上述說明的應用該第二形成溫度,使得該矽材整合層1下方的低溫熱熔膠層22在該第二形成溫度下會經由融化而與物件2結合。所以整個標示300(如文字、商標、廣告內容、警語等)可以貼合在該物件2上。其中較佳者該物件2的構成材料為布料、橡膠、金屬、塑膠等等。更佳者該布料為衣服上的布料。 One of the embodiments is to cut the integrated silicon material layer 1 into a specific mark 300 (as shown in FIG. 11), which can be text, trademark, advertising content, warning, etc. Then, the second forming temperature is applied according to the above description, so that the low-temperature hot melt adhesive layer 22 under the silicon material integrated layer 1 will be combined with the object 2 through melting at the second forming temperature. Therefore, the entire mark 300 (such as text, trademark, advertising content, warnings, etc.) can be attached to the object 2. Among them, the material of the object 2 is preferably cloth, rubber, metal, plastic and so on. Preferably, the cloth is cloth on clothes.

此一應用例可以有助於應用在如衣服上標誌商標,這是一般服飾不能避免的製造程序。 This application example can be helpful for applying trademarks on clothing, which is an unavoidable manufacturing process for general clothing.

本案中將該矽材整合層1與物件2的結合的應用尚可以使用在其他的製程中。 In this case, the application of combining the silicon integrated layer 1 and the object 2 can still be used in other manufacturing processes.

其中另一實施例係將該矽材整合層1整體切割成一特定的型態,然後再根據上述說明的應用該第二形成溫度,使得該矽材整合層1下方的低溫熱熔膠層22在該第二形成溫度下會經由融化而與物件2結合(如圖12所示)。其中較佳者該物件2的構成材料為布料、橡膠、金屬、塑膠等等。更佳者該 布料為衣服上的布料。其作用主要是在於防水或止滑,因為矽膠材料本身即具有防水及止滑的作用,所以可以貼合在衣服中適當的部位,以產生防水或止滑的效果。 Another embodiment is to cut the silicon material integrated layer 1 into a specific shape, and then apply the second forming temperature according to the above description, so that the low temperature hot melt adhesive layer 22 under the silicon material integrated layer 1 At the second forming temperature, it will be combined with the object 2 through melting (as shown in FIG. 12). Among them, the material of the object 2 is preferably cloth, rubber, metal, plastic and so on. Better The cloth is the cloth on the clothes. Its function is mainly to waterproof or anti-slip, because the silicone material itself has the function of waterproof and anti-slip, so it can be attached to the appropriate part of the clothes to produce the effect of waterproof or anti-slip.

本案中最主要的優點為將矽膠下方配置一熱熔膠層,而該熱熔膠層為包含高溫熱熔膠層及低溫熱熔膠層的雙層結構。應用該高溫熱熔膠層使得熱熔膠層可以與矽膠結合,應用該低溫熱熔膠層使得該熱熔膠層可以與物件如布料結合。所以解決了矽膠無法直接與布料結合的技術上的問題。而且本案中使用矽膠為材料,可以經由模具大量形成所需要的各種圖案再應用熱轉印的方式轉印到布料上,整體生產速度較快而且成本低。再者矽膠材料本身化性穩定,必須在250℃以上才會形變,而且不是熱塑性材料,所以對環境的影響遠低於傳統的塑化材料。這也就是各國政府為何可以接受矽材取代塑化材料的主要原因。 The main advantage in this case is that a hot-melt adhesive layer is arranged under the silicon rubber, and the hot-melt adhesive layer has a double-layer structure including a high-temperature hot-melt adhesive layer and a low-temperature hot-melt adhesive layer. The application of the high-temperature hot-melt adhesive layer enables the hot-melt adhesive layer to be combined with silicon glue, and the application of the low-temperature hot-melt adhesive layer enables the hot-melt adhesive layer to be combined with objects such as cloth. Therefore, the technical problem that silicone cannot be directly combined with cloth is solved. Moreover, the silicone rubber is used as the material in this case, which can be used to form a large number of required patterns through a mold and then transfer to the fabric by means of thermal transfer. The overall production speed is faster and the cost is low. In addition, the silicone material itself is stable, and must be deformed above 250°C, and it is not a thermoplastic material, so its impact on the environment is much lower than that of traditional plasticized materials. This is the main reason why governments of various countries can accept silicon to replace plasticized materials.

綜上所述,本案人性化之體貼設計,相當符合實際需求。其具體改進現有缺失,相較於習知技術明顯具有突破性之進步優點,確實具有功效之增進,且非易於達成。本案未曾公開或揭露於國內與國外之文獻與市場上,已符合專利法規定。 In summary, the humanized and considerate design of this case is quite in line with actual needs. Compared with the conventional technology, the specific improvement of the existing defects is obviously a breakthrough advantage, and it does have an increase in efficacy, and it is not easy to achieve. This case has not been disclosed or disclosed in domestic and foreign documents and markets, and it has complied with the provisions of the Patent Law.

上列詳細說明係針對本發明之一可行實施例之具體說明,惟該實施例並非用以限制本發明之專利範圍,凡未脫離本發 明技藝精神所為之等效實施或變更,均應包含於本案之專利範圍中。 The above detailed description is a specific description of a feasible embodiment of the present invention, but this embodiment is not intended to limit the scope of the patent of the present invention, unless it deviates from the present invention All equivalent implementations or changes made by Ming Jiyi Spirit shall be included in the patent scope of this case.

10‧‧‧矽膠層 10‧‧‧Silicone layer

20‧‧‧熱熔膠層 20‧‧‧Hot Melt Adhesive Layer

21‧‧‧高溫熱熔膠層 21‧‧‧High temperature hot melt adhesive layer

22‧‧‧低溫熱熔膠層 22‧‧‧Low temperature hot melt adhesive layer

40‧‧‧黏合帶 40‧‧‧Adhesive tape

Claims (22)

一種可貼附於物件上之整合矽片的製造方法,包含下列步驟:步驟A:將一批次的熱熔膠,融化到第一形成溫度而形成薄片狀型態的高溫熱熔膠層;並將另一批次的熱熔膠,融化到第二形成溫度且形成薄片狀型態的低溫熱熔膠層,其中該第二形成溫度低於該第一形成溫度;然後將該高溫熱熔膠層結合該低溫熱熔膠層,而形成一整體的熱熔膠層,其中位在上方的是該高溫熱熔膠層,位在下方的是該低溫熱熔膠層;步驟B:將該高溫熱熔膠層的上方塗上一層架橋劑,然後在該架橋劑的上方塗抹一層矽膠材料;步驟C:接著將該熱熔膠層的上方加熱到該第一形成溫度,因此使得該熱熔膠層上方的高溫熱熔膠層表面融化,而融化位在其上方的該架橋劑,因此該架橋劑將引導該高溫熱熔膠層上表面處的熱熔膠材質融化而滲入該矽膠材料中,因此使得該高溫熱熔膠層與該矽膠材料結合;步驟D:將溫度緩慢降低至室溫,因此上方的矽膠材料將形成一矽膠層;且在該高溫熱熔膠層與該矽膠層之間形成一黏合帶,該黏合帶的材料主要是由該高溫熱熔膠層、該矽 膠材料、及該架橋劑混合而成;因此使得該矽膠層經由該架橋劑而與該熱熔膠層緊密結合,而形成具有熱熔整合能力的矽材整合層。 A method for manufacturing an integrated silicon wafer that can be attached to an object includes the following steps: Step A: Melt a batch of hot melt adhesive to a first forming temperature to form a thin-shaped high-temperature hot melt adhesive layer ; And another batch of hot melt adhesive, melt to the second forming temperature and form a thin-shaped low-temperature hot melt adhesive layer, wherein the second forming temperature is lower than the first forming temperature; and then the high The warm hot melt adhesive layer is combined with the low temperature hot melt adhesive layer to form an integral hot melt adhesive layer, wherein the high temperature hot melt adhesive layer is located above, and the low temperature hot melt adhesive layer is located below Step B: Apply a layer of bridging agent on the top of the high-temperature hot melt adhesive layer, and then apply a layer of silicone material on top of the bridging agent; Step C: Then heat the top of the hot melt adhesive layer to the first formation Temperature, so that the surface of the high-temperature hot-melt adhesive layer above the hot-melt adhesive layer melts, and the bridging agent located above it melts, so the bridging agent will guide the hot melt at the upper surface of the high-temperature hot-melt adhesive layer The glue material melts and penetrates into the silicone material, so that the high-temperature hot-melt glue layer is combined with the silicone material; Step D: slowly lower the temperature to room temperature, so the upper silicone material will form a silicone layer; and An adhesive tape is formed between the high-temperature hot-melt adhesive layer and the silicon layer. The material of the adhesive tape is mainly composed of the high-temperature hot-melt adhesive layer and the silicon layer. The adhesive material and the bridging agent are mixed; therefore, the silicone layer is closely combined with the hot melt adhesive layer through the bridging agent to form an integrated layer of silicon material with hot melt integration capability. 如申請專利範圍第1項所述之可貼附於物件上之整合矽片的製造方法,其中該架橋劑為聚矽氧烷(polysiloxan)。 The manufacturing method of an integrated silicon wafer that can be attached to an object as described in item 1 of the scope of patent application, wherein the bridging agent is polysiloxan. 如申請專利範圍第1項所述之可貼附於物件上之整合矽片的製造方法,其中該熱熔膠層的材料為熱塑性聚氨酯(thermoplastic polyurethane)。 The method for manufacturing an integrated silicon wafer that can be attached to an object as described in item 1 of the scope of patent application, wherein the material of the hot melt adhesive layer is thermoplastic polyurethane (thermoplastic polyurethane). 如申請專利範圍第1項所述之可貼附於物件上之整合矽片的製造方法,其中該第一形成溫度介於120℃到200℃之間。 The method for manufacturing an integrated silicon wafer that can be attached to an object as described in item 1 of the scope of the patent application, wherein the first forming temperature is between 120°C and 200°C. 如申請專利範圍第1項所述之可貼附於物件上之整合矽片的製造方法,其中該第二形成溫度介於60℃到150℃之間。 The method for manufacturing an integrated silicon wafer that can be attached to an object as described in item 1 of the scope of the patent application, wherein the second forming temperature is between 60°C and 150°C. 如申請專利範圍第1項所述之可貼附於物件上之整合矽片的製造方法,其中該第一形成溫度高於該第二形成溫度10℃到60℃。 According to the method for manufacturing an integrated silicon wafer that can be attached to an object as described in item 1 of the scope of the patent application, the first forming temperature is higher than the second forming temperature by 10°C to 60°C. 如申請專利範圍第1項所述之可貼附於物件上之整合矽片的製造方法,其中將該矽材整合層應用熱熔的方式以貼合到所需要的物件上,係將該矽材整合層加溫到該第二形成 溫度,使得該矽材整合層下方的低溫熱熔膠層在該第二形成溫度下會經由融化而與該物件結合;其中該物件在該第二形成溫度下不會融化或產生不可接受之變形,而該矽材整合層的其他材質在該第二形成溫度下並不會融化或產生不可接受之變形,因此不會破壞材質。 The method for manufacturing an integrated silicon wafer that can be attached to an object as described in item 1 of the scope of patent application, wherein the integrated layer of silicon material is applied to the required object by hot-melting, and the silicon The material integration layer is heated to the second formation Temperature, so that the low-temperature hot-melt adhesive layer under the silicon integrated layer will be combined with the object through melting at the second forming temperature; wherein the object will not melt or produce unacceptable results at the second forming temperature Deformation, and the other materials of the silicon integrated layer will not melt or produce unacceptable deformation at the second forming temperature, so the material will not be damaged. 如申請專利範圍第7項所述之可貼附於物件上之整合矽片的製造方法,其中係將該矽材整合層預先切割成一特定的標示再貼附到該物件上;其中該標示係選自文字、商標、廣告內容、警語。 As described in item 7 of the scope of patent application, the method for manufacturing an integrated silicon wafer that can be attached to an object, wherein the integrated layer of silicon material is pre-cut into a specific label and then attached to the object; wherein the label is Selected from text, trademarks, advertising content, warnings. 如申請專利範圍第7或8項所述之可貼附於物件上之整合矽片的製造方法,其中該物件的構成材料選自布料、橡膠、金屬、塑膠。 The method for manufacturing an integrated silicon wafer that can be attached to an object as described in item 7 or 8 of the scope of patent application, wherein the constituent material of the object is selected from cloth, rubber, metal, and plastic. 如申請專利範圍第1項所述之可貼附於物件上之整合矽片的製造方法,其中在步驟A中該高溫熱熔膠層及該低溫熱熔膠層分別形成後再結合成該熱熔膠層。 As described in item 1 of the scope of patent application, the method for manufacturing an integrated silicon wafer that can be attached to an object, wherein in step A, the high-temperature hot-melt adhesive layer and the low-temperature hot-melt adhesive layer are formed separately and then combined into The hot melt adhesive layer. 如申請專利範圍第1項所述之可貼附於物件上之整合矽片的製造方法,其中在步驟A中先形成該高溫熱熔膠層,然後將熱熔膠材料灌注在該高溫熱熔膠層上而應用溫度的改變形成該低溫熱熔膠層,整體形成該熱熔膠層。 The method for manufacturing an integrated silicon wafer that can be attached to an object as described in item 1 of the scope of patent application, wherein in step A, the high-temperature hot-melt adhesive layer is first formed, and then the hot-melt adhesive material is poured on the high temperature A change in application temperature is applied to the hot melt adhesive layer to form the low temperature hot melt adhesive layer, and the hot melt adhesive layer is formed as a whole. 一種由申請專利範圍第1項之製造方法所製造的可貼 附於物件上之整合矽片,包含:該矽膠層;該熱熔膠層,主要包含:該高溫熱熔膠層,位在該矽膠層的下方,且應用該架橋劑黏附到該矽膠層;該低溫熱熔膠層,黏附在該高溫熱熔膠層的下方;其中該高溫熱熔膠層由該第一形成溫度加熱熱熔膠所形成;該低溫熱熔膠層由該第二形成溫度加熱熱熔膠所形成,其中該第二形成溫度低於該第一形成溫度。 A sticker manufactured by the manufacturing method of item 1 of the scope of patent application An integrated silicon wafer attached to an object, including: the silicone layer; the hot melt adhesive layer, mainly includes: the high temperature hot melt adhesive layer, located below the silicone layer, and the bridging agent is used to adhere to the silicone layer The low-temperature hot-melt adhesive layer adheres to the bottom of the high-temperature hot-melt adhesive layer; wherein the high-temperature hot-melt adhesive layer is formed by the first forming temperature heating hot-melt adhesive; the low-temperature hot-melt adhesive layer is formed by The second forming temperature is formed by heating the hot melt adhesive, wherein the second forming temperature is lower than the first forming temperature. 如申請專利範圍第12項所述之可貼附於物件上之整合矽片,其中該高溫熱熔膠層與該矽膠層之間形成該黏合帶,該黏合帶的材料主要是由該高溫熱熔膠層、該矽膠層、及該架橋劑混合而成。 As described in item 12 of the scope of patent application, the integrated silicon wafer that can be attached to an object, wherein the adhesive tape is formed between the high-temperature hot melt adhesive layer and the silicone layer, and the material of the adhesive tape is mainly made of the high The warm melt glue layer, the silicon glue layer, and the bridging agent are mixed together. 如申請專利範圍第12項所述之可貼附於物件上之整合矽片,其中該架橋劑為聚矽氧烷(polysiloxan)。 The integrated silicon wafer that can be attached to an object as described in item 12 of the scope of patent application, wherein the bridging agent is polysiloxan. 如申請專利範圍第12項所述之可貼附於物件上之整合矽片,其中該熱熔膠層的材料為熱塑性聚氨酯(thermoplastic polyurethane)。 The integrated silicon wafer that can be attached to an object as described in item 12 of the scope of the patent application, wherein the material of the hot melt adhesive layer is thermoplastic polyurethane (thermoplastic polyurethane). 如申請專利範圍第12項所述之可貼附於物件上之整合矽片,其中該第一形成溫度介於120℃到200℃之間;其中該第二形成溫度介於60℃到150℃之間;其中該第一形成溫度高於該第二形成溫度10℃到60℃。 The integrated silicon wafer that can be attached to an object as described in claim 12, wherein the first forming temperature is between 120°C and 200°C; and the second forming temperature is between 60°C and 150°C Between; wherein the first formation temperature is higher than the second formation temperature by 10°C to 60°C. 如申請專利範圍第12項所述之可貼附於物件上之整合矽片,尚包含一位在該低溫熱熔膠層下方的物件層;其中該物件層在該第二形成溫度下不會融化或產生不可接受之變形;其結合方式係為將該矽膠層與該熱熔膠層整合而成的材料應用熱熔的方式貼合到該物件層上;係將該矽膠層與該熱熔膠層整合的材料加溫到該第二形成溫度,使得該低溫熱熔膠層在該第二形成溫度下會經由融化而與該物件層結合。 The integrated silicon wafer that can be attached to an object as described in item 12 of the scope of the patent application further includes an object layer under the low-temperature hot melt adhesive layer; wherein the object layer is not at the second forming temperature Will melt or produce unacceptable deformation; the bonding method is that the material formed by the integration of the silicone layer and the hot melt adhesive layer is bonded to the object layer by hot melt; the silicone layer and the heat The integrated material of the melt adhesive layer is heated to the second forming temperature, so that the low-temperature hot melt adhesive layer will be combined with the object layer through melting at the second forming temperature. 如申請專利範圍第17項所述之可貼附於物件上之整合矽片,其中係將該矽膠層與該熱熔膠層整合的材料預先切割成一特定的型態;再將整個型態貼合在該物件層上。 The integrated silicon wafer that can be attached to an object as described in item 17 of the scope of patent application, in which the material integrating the silicone layer and the hot melt adhesive layer is pre-cut into a specific pattern; then the entire pattern is attached Close to the object layer. 如申請專利範圍第18項所述之可貼附於物件上之整合矽片,其中該型態係選自文字、商標、廣告內容、警語。 The integrated silicon chip that can be attached to an object as described in item 18 of the scope of patent application, wherein the type is selected from text, trademark, advertising content, and warnings. 如申請專利範圍第17項所述之可貼附於物件上之整合矽片,其中該矽膠層與該熱熔膠層整合的材料整合於該物件層後做為防水或防滑之用。 The integrated silicon wafer that can be attached to an object as described in item 17 of the scope of patent application, wherein the integrated material of the silicone layer and the hot melt adhesive layer is integrated on the object layer for waterproof or non-slip purpose. 如申請專利範圍第17或18或20項所述之可貼附於物件上之整合矽片,其中該物件層的構成材料為布料。 The integrated silicon wafer that can be attached to an object as described in item 17 or 18 or 20 of the scope of the patent application, wherein the constituent material of the object layer is cloth. 如申請專利範圍第17或18或20項所述之可貼附於物件上之整合矽片,其中該物件層的構成材料選自橡膠、金屬、塑膠。 The integrated silicon wafer that can be attached to an object as described in item 17 or 18 or 20 of the scope of the patent application, wherein the constituent material of the object layer is selected from rubber, metal, and plastic.
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Citations (2)

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Publication number Priority date Publication date Assignee Title
CN101429413A (en) * 2008-11-18 2009-05-13 广州市鹿山化工材料有限公司 Double-layer composite hot melt adhesive film for bonding metal and plastic
TWM559804U (en) * 2017-12-29 2018-05-11 Zhang wen yao Integrated silicon sheet that can be attached to objects

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101429413A (en) * 2008-11-18 2009-05-13 广州市鹿山化工材料有限公司 Double-layer composite hot melt adhesive film for bonding metal and plastic
TWM559804U (en) * 2017-12-29 2018-05-11 Zhang wen yao Integrated silicon sheet that can be attached to objects

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