TWI741826B

TWI741826B - Sensing device, humidity sensing chip and method of manufacturing the device

Info

Publication number: TWI741826B
Application number: TW109135225A
Authority: TW
Inventors: 張政峻; 方維倫
Original assignee: 國立清華大學
Priority date: 2020-10-12
Filing date: 2020-10-12
Publication date: 2021-10-01
Also published as: TW202215674A

Abstract

This invention provides a humidity sensing chip including a substrate, an insulation layer and a sensing material. The substrate has a lower substrate surface and a upper substrate surface corresponding to the lower substrate surface. The insulation layer is arranged on the upper substrate surface, has a plurality of spacings. a lower insulation layer surface and an upper insulation layer surface. The sensing material is arranged in the plurality of spacings, characterized in that the lower insulation layer surface corresponding to the plurality of spacings is hollowed out, so as to let the sensing material sense a humility of an environment from the upper insulation layer surface to the lower insulation layer surface.

Description

感測裝置、濕度感測晶片、及其製作方法 Sensing device, humidity sensing chip, and manufacturing method thereof

本發明係關於一種感測裝置、濕度感測晶片、及其製作方法，特別是關於一種水平配置的感測裝置、濕度感測晶片、及其製作方法。 The present invention relates to a sensing device, a humidity sensing chip, and a manufacturing method thereof, and in particular to a horizontally arranged sensing device, a humidity sensing chip, and a manufacturing method thereof.

近年來由於穿戴裝置以及智慧電子裝置蓬勃發展，許多感測器使用微機電系統(Micro-electro-mechanical System,MEMS)的技術製造成裸晶，整合到感測晶片，並將感測晶片整合到這些裝置中，再結合物聯網，所有行動裝置都會透過雲端互相通訊連結以分享資料。 In recent years, due to the vigorous development of wearable devices and smart electronic devices, many sensors are manufactured into bare crystals using micro-electro-mechanical system (MEMS) technology, integrated into the sensor chip, and the sensor chip is integrated into Among these devices, combined with the Internet of Things, all mobile devices will communicate with each other through the cloud to share data.

在先前技術中，濕度感測單元依據不同的電性量測方式可分成電阻式與電容式。電阻式相對溼度感測單元則是利用指叉狀電極來當作相對濕度感測元件，其在電極結構上的設計相對簡單，成本低廉、具有長時間穩定性以及容易校正的優點。濕度感測用的感濕材料則大多是利用奈米級材料的多孔隙特性，其具有吸水較易、較高的比表面積，能改善傳統電阻式濕度感測單元的訊號大小、線性度、以及反應時間等等。然而電阻式的量測容易受到溫度的影響，導致訊號的漂移，因此電阻式的感測機制通常只用於低價位的濕度感測單元。 In the prior art, the humidity sensing unit can be divided into a resistive type and a capacitive type according to different electrical measurement methods. The resistive relative humidity sensing unit uses interdigitated electrodes as the relative humidity sensing element, and its electrode structure is relatively simple in design, low in cost, long-term stability, and easy to calibrate. The humidity sensing materials used for humidity sensing mostly use the porous properties of nano-level materials. They have easier water absorption and a higher specific surface area, which can improve the signal size, linearity, and linearity of traditional resistive humidity sensing units. Response time and so on. However, resistive measurement It is susceptible to the influence of temperature, which leads to signal drift. Therefore, the resistive sensing mechanism is usually only used for low-cost humidity sensing units.

一般而言，電容式的濕度感測單元的電極的配置方式有兩種，一種是配置在同一平面的指叉狀電極，另一種是配置在不同平面的平行板電極，透過兩電極之間置入具有吸水能力的介電材料，來感測指叉狀電極或是平行板電極之間所產生的電容值變化，藉由量測此電容值變化而可得知濕度的大小。還有另一種懸臂式濕度感測單元，其使用了吸水的介電材料作為懸臂，而因應濕度的變化在懸臂上表面感測濕度變化而在懸臂上表面產生不同張力，造成懸臂的彎曲，藉此也可量測電容變化值。例如在屏東科技大學Chia-Yen Lee以及Gwo-Bin Lee在2005年Vol.3,1-14發表的溼度感測器的相關論文中，提到了此種懸臂式濕度感測單元。 Generally speaking, there are two ways to arrange the electrodes of the capacitive humidity sensing unit. One is the interdigitated electrodes arranged on the same plane, and the other is the parallel plate electrodes arranged on different planes. A dielectric material with water absorption capability is used to sense the change in capacitance between the interdigital electrodes or parallel plate electrodes, and the humidity can be obtained by measuring the change in capacitance. There is another cantilever type humidity sensing unit, which uses a water-absorbing dielectric material as the cantilever, and in response to the change in humidity, the humidity change is sensed on the upper surface of the cantilever, and different tensions are generated on the upper surface of the cantilever, which causes the cantilever to bend. This can also measure the capacitance change value. For example, in the paper about humidity sensor published by Chia-Yen Lee and Gwo-Bin Lee of Pingtung University of Science and Technology in Vol. 3, 1-14 in 2005, this cantilever humidity sensor unit is mentioned.

氣壓感測單元亦可分成電阻式與電容式。電阻式的氣壓感測單元是透過壓阻材料在其受到壓力變形時所產生的電阻值的改變，再透過例如惠斯登電橋的電路設計來進行電壓變化的量測，此種氣壓感測單元通常具有高靈敏度的優點，例如在Journal of Mechanical Sceience and Technology(KSME Int.J.),Vol.20,No.4,pp.505~512,2006，由Jongwa Won,Sung-Hoon Choa,Zhao Yulong發表的文獻中，揭示一種壓阻式具有塊狀空腔的氣壓感測單元，矽橫膈膜配置於塊狀空腔上方，壓阻材料則配置於矽橫膈膜上方，且在塊狀空腔的四個邊的中點，以使壓電材料可較靈敏地接受到環境氣壓的壓力而變形，以強化其感測的靈敏度。但電阻式的元件容易受到溫度的影響，且由於電阻式的元件需要通入額定電流來感測，因此在耗能上會比較嚴重。 The air pressure sensing unit can also be divided into resistive type and capacitive type. The resistive air pressure sensing unit uses the change in resistance value of the piezoresistive material when it is deformed by pressure, and then uses the circuit design such as Wheatstone bridge to measure the voltage change. This kind of air pressure sensing The unit usually has the advantage of high sensitivity, for example, in Journal of Mechanical Sceience and Technology (KSME Int. J.), Vol. 20, No. 4, pp. 505~512, 2006, by Jongwa Won, Sung-Hoon Choa, Zhao The literature published by Yulong reveals a piezoresistive air pressure sensing unit with a block-shaped cavity. The silicon diaphragm is arranged above the block-shaped cavity, and the piezoresistive material is arranged above the silicon The midpoint of the four sides of the cavity, so that the piezoelectric material can more sensitively receive the pressure of the ambient air pressure and deform, so as to enhance the sensitivity of its sensing. But electricity Resistive components are easily affected by temperature, and because resistive components need to be supplied with a rated current for sensing, they will consume more energy.

電容式氣壓感測單元則是透過改變平行板電容器之間的重疊面積、或是上下電容板(或上下薄膜電極)之間的相對距離的改變來進行測量，使用電容式氣壓感測單元雖然會有寄生電容的問題，但目前都會設計出整合的電路將寄生電容所產生的雜訊的影響降到最低，且使用電容式的感測機制通常耗能較小，同時靈敏度的表現也不遜色，目前最常見的感測方式為利用上下電容板之間距離的改變的感測方法。 The capacitive air pressure sensing unit measures by changing the overlap area between the parallel plate capacitors or the relative distance between the upper and lower capacitive plates (or upper and lower film electrodes). Using the capacitive air pressure sensing unit will There is a problem of parasitic capacitance, but at present, integrated circuits are designed to minimize the influence of noise generated by parasitic capacitance, and the use of capacitive sensing mechanisms usually consumes less energy, and the sensitivity performance is not inferior. At present, the most common sensing method is a sensing method that uses the change of the distance between the upper and lower capacitive plates.

溫度感測單元可使用電阻器來量測，例如利用長繞線的金屬導線來當作電阻器，在結構上相對簡單，溫度改變時藉由電阻器的電阻值的變化，使輸出電壓變化而可量測溫度的高低。 The temperature sensing unit can use a resistor to measure, for example, a long-wound metal wire is used as a resistor. The structure is relatively simple. When the temperature changes, the output voltage is changed by the change of the resistance value of the resistor. The temperature can be measured.

然而，在目前的濕度感測單元上的感測材料與外部環境中的水氣的反應時間非常緩慢、以及目前氣壓感測單元偵測外部環境的氣壓的靈敏度有待改進 However, the reaction time between the sensing material on the current humidity sensing unit and the moisture in the external environment is very slow, and the sensitivity of the current air pressure sensing unit to detect the air pressure in the external environment needs to be improved.

本案申請人鑑於習知技術中的不足，經過悉心試驗與研究，並一本鍥而不捨之精神，終構思出本案，且能夠克服先前技術的不足，以下為本案之簡要說明。 In view of the shortcomings of the prior art, the applicant in this case, after careful experimentation and research, and with a spirit of perseverance, finally conceived the case, and was able to overcome the shortcomings of the previous technology. The following is a brief description of the case.

本發明可以有效解決先前技術具有的上述問題，提供一種水平配置的多重感測裝置，使用晶片級的方式實現電容式濕度感測單元、電容式氣壓感測單元、以及溫度感測單元。晶片製程使用標準積體電路製程，可以有效地將感測裝置的體積微縮到毫米的尺度，且利用標準積體電路製程平台來建構這些感測單元，可以有效地加速濕度感測單元的反應時間、且增加氣壓感測單元的靈敏度。藉由標準積體電路製程多層堆疊的特性，可在單一製程中，輕易地製作出多重量測單元。又因感測晶片可以使用已商業化的製程進行製作，故具有較高的製程良率以及可靠度，不須客製化特殊的晶片製程，具備量產商業化的潛能。可見本發明具有極高的產業應用價值。 The present invention can effectively solve the above-mentioned problems of the prior art, and provides a horizontally arranged multiple sensing device, which uses a wafer-level method to realize a capacitive humidity sensing unit, a capacitive air pressure sensing unit, and a temperature sensing unit. Chip The process uses standard integrated circuit manufacturing process, which can effectively reduce the size of the sensing device to the millimeter scale, and the use of standard integrated circuit manufacturing platform to construct these sensing units can effectively accelerate the reaction time of the humidity sensing unit, And increase the sensitivity of the air pressure sensing unit. With the characteristics of multi-layer stacking in standard integrated circuit manufacturing process, multiple weighing units can be easily manufactured in a single manufacturing process. In addition, since the sensor chip can be manufactured using a commercialized process, it has a higher process yield and reliability, does not require customized special chip process, and has the potential for mass production commercialization. It can be seen that the present invention has extremely high industrial application value.

本案之一構想在於提供一種該感測裝置，該感測裝置包含一半導體基材、一載板、一氣壓感測單元、一濕度感測單元、以及一溫度感測單元。該半導體基材具有一第一材料部分、一第二材料部分、以及一第三材料部分。該氣壓感測單元耦合於該第一材料部分，且包含一第一電極層、一腔體、以及一第二電極層，以形成一氣壓式電容器。該腔體配置於該第一電極層與該載板之間，而形成具有一流體的一密閉空間，其中該第一材料部分具有一第一開放背腔，該第一開放背腔與該載板形成該腔體，該第一電極層的兩側各具有在該密閉空間外的一溝槽，以降低該第一電極層的剛性。該濕度感測單元耦合於該第二材料部分，並具有形成複數間隔空間和指叉配置的一柱狀電極堆疊層、以及配置於該複數間隔空間中的一感測材料，其中該第二材料部分具有一第二開放背腔，且該載板在該第二開放背腔的地方具有一開口，以增加該濕度感測單元的一接觸面積。該溫度感測單元耦合於該第三材料部分，其中該溫度感測單元包括一P型半導體區和一N型半導體區，以形成一二極體元件；其中：該濕度感測單元以及該氣壓感測單元分別具有一第一電容與一第二電容。該感測材料具有一介電常數。在該感測材料藉由釋放其濕氣或吸收空氣中的濕氣而使該介電常數改變以造成該第一電容改變的條件下，該濕度感測單元感測該第一電容以產生一第一電容感測訊號。該第一電極層與該第二電極層之間具有一間距。在該第一電極層藉由變形而使該間距改變以造成該第二電容改變的條件下，該氣壓感測單元感測該第二電容以產生一第二電容感測訊號。 One idea of the present application is to provide the sensing device, which includes a semiconductor substrate, a carrier, an air pressure sensing unit, a humidity sensing unit, and a temperature sensing unit. The semiconductor substrate has a first material portion, a second material portion, and a third material portion. The air pressure sensing unit is coupled to the first material portion and includes a first electrode layer, a cavity, and a second electrode layer to form a pressure type capacitor. The cavity is disposed between the first electrode layer and the carrier to form a closed space with a fluid, wherein the first material part has a first open back cavity, the first open back cavity and the carrier The plate forms the cavity, and both sides of the first electrode layer have a groove outside the enclosed space to reduce the rigidity of the first electrode layer. The humidity sensing unit is coupled to the second material part, and has a columnar electrode stack layer forming a plurality of spacing spaces and interdigital configurations, and a sensing material arranged in the plurality of spacing spaces, wherein the second material The part has a second open back cavity, and the carrier board has an opening at the second open back cavity to increase a contact area of the humidity sensing unit. The temperature sensing unit is coupled to the third material part, wherein the temperature sensing unit includes a P-type semiconductor region and an N-type semiconductor region to form a diode element; wherein: the humidity sensing unit is And the air pressure sensing unit has a first capacitor and a second capacitor respectively. The sensing material has a dielectric constant. Under the condition that the sensing material changes the dielectric constant by releasing its moisture or absorbing moisture in the air to cause the first capacitance to change, the humidity sensing unit senses the first capacitance to generate a The first capacitance sensing signal. There is a gap between the first electrode layer and the second electrode layer. Under the condition that the distance between the first electrode layer is changed by deformation to cause the second capacitance to change, the air pressure sensing unit senses the second capacitance to generate a second capacitance sensing signal.

本案之一構想在於提供一種濕度感測晶片，其包含一基板、一絕緣層、以及一感測材料。該基板具一基板下表面及相對於該基板下表面之一基板上表面。該絕緣層設置於該基板上表面上，且具複數容置空間、一絕緣層下表面、以及一絕緣層上表面。該感測材料設置於該複數容置空間，其特徵在於該絕緣層下表面相對於該複數容置空間之部分係經鏤空，俾使該感測材料自該絕緣層上表面及該絕緣層下表面感測一環境之一濕度。 One of the ideas of this case is to provide a humidity sensor chip, which includes a substrate, an insulating layer, and a sensing material. The substrate has a lower surface of the substrate and an upper surface of the substrate opposite to the lower surface of the substrate. The insulating layer is arranged on the upper surface of the substrate and has a plurality of accommodating spaces, a lower surface of the insulating layer, and an upper surface of the insulating layer. The sensing material is disposed in the plurality of accommodating spaces, and is characterized in that the portion of the lower surface of the insulating layer relative to the plurality of accommodating spaces is hollowed out, so that the sensing material is free from the upper surface of the insulating layer and the lower portion of the insulating layer The surface senses the humidity of an environment.

本案之另一構想在於提供一種製造一感測裝置之方法，包含下列步驟：提供用於形成複數感測單元的一前置結構，其中該前置結構包含一基材、一第一電極層、一第二電極層以及一柱狀電極堆疊層，且該基材具有一第一材料部分以及一第二材料部分；蝕刻該第一材料部分的一第一子部分與該第二材料部分的一第二子部分，以分別形成一第一開放背腔以及一第二開放背腔；蝕刻該第一電極層與該第二電極層的周邊部分，使該第一電極層的兩側各具有一溝槽，並蝕刻該柱狀電極堆疊層的一部分，以形成複數間隔空間；填入一感測材料於該複數間隔空間，以形成該感測裝置的一半成品；以及結合該半成品與一載板，以分別藉由使用該第二材料部分與該第一材料部分而形成具有一第一電容的一濕度感測單元以及具有一第二電容的一氣壓感測單元，其中該第一電極層具一撓性，其兩側的各該溝槽增加該撓性，該第一電極層根據一環境氣壓之一變化來量測該第一電容，該感測材料用以感測一環境之一濕度，且該第二開放背腔加速該濕度感測單元的一反應時間。 Another idea of the present application is to provide a method of manufacturing a sensing device, including the following steps: providing a front structure for forming a plurality of sensing units, wherein the front structure includes a substrate, a first electrode layer, A second electrode layer and a columnar electrode stack, and the substrate has a first material portion and a second material portion; etching a first sub-portion of the first material portion and a second material portion The second sub-part to respectively form a first open back cavity and a second open back cavity; etching the peripheral part of the first electrode layer and the second electrode layer so that each side of the first electrode layer has a Trench, and etch a part of the columnar electrode stack layer to form a plurality of spacing spaces; fill a sensing material in the plurality of spacing spaces to form a semi-finished product of the sensing device; and combine the semi-finished product and a carrier board , Respectively, by using the The second material portion and the first material portion form a humidity sensing unit with a first capacitor and a pressure sensing unit with a second capacitor, wherein the first electrode layer has a flexibility, and both sides of the first electrode layer are flexible. Each of the grooves increases the flexibility, the first electrode layer measures the first capacitance according to a change in an ambient air pressure, the sensing material is used to sense the humidity of an environment, and the second open back The cavity accelerates a response time of the humidity sensing unit.

本案之另一構想在於提供一種感測裝置，該感測裝置包含一濕度感測單元，該濕度感測單元包含一正面及相對於該正面之一背面、一感測材料、以及一開放背腔。該感測材料位於該正面，該開放背腔形成於該背面以使該感測材料自該開放背腔感測一環境之一濕度。 Another idea of the present application is to provide a sensing device including a humidity sensing unit, the humidity sensing unit including a front surface and a back surface opposite to the front surface, a sensing material, and an open back cavity . The sensing material is located on the front surface, and the open back cavity is formed on the back surface so that the sensing material senses the humidity of an environment from the open back cavity.

10,30:感測裝置 10, 30: Sensing device

101:氣壓感測單元 101: Air pressure sensing unit

20:濕度感測晶片 20: Humidity sensor chip

102:濕度感測單元 102: Humidity Sensing Unit

DIO:二極體元件 DIO: Diode element

103:溫度感測單元 103: temperature sensing unit

103N:N型半導體區 103N: N-type semiconductor region

103P:P型半導體區 103P: P-type semiconductor region

100:半導體基材 100: Semiconductor substrate

1011:第一電極層 1011: first electrode layer

1001:第一材料部分 1001: The first material part

1012:第二電極層 1012: second electrode layer

1003:第三材料部分 1003: The third material part

1002:第二材料部分 1002: The second material part

1013:腔體 1013: cavity

CBC:封閉背腔 CBC: closed back cavity

PARA:第二面積 PARA: second area

1014:氣壓式電容器 1014: Air pressure capacitor

TARA:第一面積 TARA: the first area

HARA:第三面積 HARA: third area

CAP1:第一電容 CAP1: The first capacitor

CAP2:第二電容 CAP2: second capacitor

CREG:中間區域 CREG: Middle area

TH,TTH:溝槽 TH, TTH: groove

16:半成品 16: semi-finished products

SH:複數間隔空間 SH: plural space

P:環境氣壓 P: ambient air pressure

1021:柱狀電極堆疊層 1021: Pillar electrode stack layer

OPNC1:第一開放背腔 OPNC1: The first open back cavity

1022:感測材料 1022: sensing material

OPNC2:第二開放背腔 OPNC2: second open back cavity

OPN:開口 OPN: Opening

1021-1:第一柱狀電極層 1021-1: The first columnar electrode layer

1021-2:第二柱狀電極層 1021-2: second columnar electrode layer

TRH:通孔 TRH: Through hole

STEM1,STEM2:溫度感測訊號 STEM1, STEM2: temperature sensing signal

SCAP1:第一電容感測訊號 SCAP1: The first capacitive sensing signal

SCAP2:第二電容感測訊號 SCAP2: The second capacitive sensing signal

DIC:介電常數 DIC: Dielectric constant

MOI:濕氣 MOI: Moisture

FLM:薄膜 FLM: Film

FI:指叉配置 FI: Fork configuration

VTEP:電壓 VTEP: Voltage

STEMP:溫度感測訊號 STEMP: temperature sensing signal

TEP:溫度 TEP: temperature

DEP1:第一深度 DEP1: first depth

12:載板 12: Carrier board

DEP2:第二深度 DEP2: second depth

14:前置結構 14: Front structure

1001P:第一子部分 1001P: The first subpart

101P:周邊部分 101P: Peripheral part

1002P:第二子部分 1002P: The second subpart

1021P:柱狀電極堆疊層的一部份 1021P: Part of the stacked layer of columnar electrodes

SC:感測晶片 SC: sensor chip

PAD:複數連接墊 PAD: Plural connection pad

SL:複數訊號線 SL: complex signal line

18:氣密膠 18: Airtight glue

200:基板 200: substrate

20:濕度感測晶片 20: Humidity sensor chip

2022,3022:感測材料 2022, 3022: sensing material

2023:絕緣層 2023: insulating layer

200U:基板上表面 200U: The upper surface of the substrate

200D:下表面 200D: lower surface

2023D:絕緣層下表面 2023D: Lower surface of insulating layer

SH:複數容置空間 SH: plural housing space

2023U:絕緣層上表面 2023U: The upper surface of the insulating layer

2021E:複數電極區 2021E: Multiple electrode area

302U:感測材料的正面 302U: the front side of the sensing material

302:濕度感測單元 302: Humidity Sensing Unit

302D:感測材料的背面 302D: the back of the sensing material

本案得藉由下列圖式及詳細說明，俾得以令熟悉技藝之人更深入了解。 In this case, the following diagrams and detailed descriptions can be used to make people who are familiar with the art have a deeper understanding.

第一圖是本揭示較佳實施例的感測裝置的示意圖。 The first figure is a schematic diagram of a sensing device according to a preferred embodiment of the present disclosure.

第二圖是本揭示較佳實施例製造一感測裝置之方法的示意圖。 The second figure is a schematic diagram of a method of manufacturing a sensing device according to a preferred embodiment of the present disclosure.

第三圖A~E是本揭示較佳實施例感測裝置在各製造過程中的示意圖。 The third figures A to E are schematic diagrams of the sensing device in each manufacturing process of the preferred embodiment of the present disclosure.

第三圖F為本揭示較佳實施例使用雷射鑽孔基材的示意圖。 The third figure F is a schematic diagram of the laser drilling substrate used in the preferred embodiment of the present disclosure.

第四圖是本揭示較佳實施例濕度感測單元的靈敏度與反應時間的曲線的示意圖。 The fourth figure is a schematic diagram of the sensitivity and response time of the humidity sensing unit in the preferred embodiment of the present disclosure.

第五圖是本揭示較佳實施例氣壓感測單元的靈敏度的曲線的示意圖。 The fifth figure is a schematic diagram of the sensitivity curve of the air pressure sensing unit of the preferred embodiment of the present disclosure.

第六圖是本揭示較佳實施例濕度感測晶片的示意圖。 The sixth figure is a schematic diagram of the humidity sensor chip of the preferred embodiment of the present disclosure.

第七圖是本揭示較佳實施例感測裝置的示意圖。 The seventh figure is a schematic diagram of the sensing device of the preferred embodiment of the present disclosure.

請參酌本揭示的附圖來閱讀下面的詳細說明，其中本揭示的附圖是以舉例說明的方式，來介紹本揭示各種不同的實施例，並供瞭解如何實現本發明。本揭示實施例提供了充足的內容，以供本領域的技術人員來實施本揭示的實施例，或實施依本揭示的內容所衍生的實施例。須注意的是，該些實施例彼此間並不互斥，且部分實施例可與其他一個或多個實施例作適當結合，以形成新的實施例，亦即本揭示的實施並不局限於以下所揭示的實施例。此外為了簡潔明瞭舉例說明，在各實施例中並不會過度揭示相關的細節，即使揭示了具體的細節也僅舉例說明以使讀者明瞭，在各實施例中的相關具體細節也並非用來限制本案的揭示。 Please read the following detailed description with reference to the accompanying drawings of the present disclosure. The accompanying drawings of the present disclosure are used as examples to introduce various embodiments of the present disclosure and to understand how to implement the present invention. The embodiments of the present disclosure provide sufficient content for those skilled in the art to implement the embodiments of the present disclosure or implement embodiments derived from the content of the present disclosure. It should be noted that these embodiments are not mutually exclusive with each other, and some embodiments can be appropriately combined with one or more other embodiments to form new embodiments, that is, the implementation of the present disclosure is not limited to Examples disclosed below. In addition, for the sake of conciseness and clarity, the relevant details are not excessively disclosed in each embodiment. Even if specific details are disclosed, they are only illustrated to make readers understand. The relevant specific details in each embodiment are not used to limit. The disclosure of this case.

請參閱第一圖，其為本揭示較佳實施例的感測裝置10的示意圖。請合併參考第一圖中的立體圖與剖面圖，該感測裝置10包含一半導體基材100、一載板12、一氣壓感測單元101、一濕度感測單元102、以及一溫度感測單元103。在立體圖中的該半導體基材100尚未與該載板12耦合，而在剖面圖中該半導體基材100則已經與該載板12耦合。該半導體基材100具有一第一材料部分1001、一第二材料部分1002、以及一第三材料部分1003。該氣壓感測單元101耦合於該第一材料部分1001，且包含一第一電極層1011、一腔體1013、以及一第二電極層1012，，以形成一氣壓式電容器1014。該腔體1013配置於該第一電極層1011與該載板12之間，而形成具有一流體的一密閉空間，其中該第一材料部分1001具有一第一開放背腔OPNC1，該第一開放背腔OPNC1與該載板12形成該腔體1013，該第一電極層1011的兩側各具有在該密閉空間外的一溝槽TH，以降低該第一電極層的剛性1011。該濕度感測單元102耦合於該第二材料部分1002，並具有形成複數間隔空間SH和指叉配置FI的一柱狀電極堆疊層1021、以及配置於該複數間隔空間SH中的一感測材料1022，其中該第二材料部分1002具有一第二開放背腔OPNC2，且該載板12在該第二開放背腔OPNC2的地方具有一開口OPN，以增加該濕度感測單元102的一接觸面積ARA。在立體圖中的該半導體基材100尚未加工，因此尚未具有該第一開放背腔OPNC1與該第二開放背腔OPNC2，而在剖面圖中該半導體基材100則已經加工，而形成該第一開放背腔OPNC1與該第二開放背腔OPNC2，且該載板12也經過加工後形成該開口OPN。該溫度感測單元103耦合於該第三材料部分1003，其中該溫度感測單元103包括一P型半導體區103P和一N型半導體區103N，以形成一二極體元件DIO；其中：該濕度感測單元102以及該氣壓感測單元101分別具有一第一電容CAP1與一第二電容CAP2。該感測材料1022具有一介電常數DIC。在該感測材料1022藉由釋放其濕氣MOI或吸收空氣中的濕氣MOI而使該介電常數DIC改變以造成該第一電容CAP1改變的條件下，該濕度感測單元101感測該第一電容CAP1以產生一第一電容感測訊號SCAP1。該第一電極層1011與該第二電極層1012之間具有一間距SP。在該第一電極層1011藉由變形而使該間距SP改變以造成該第二電容CAP2改變的條件下，該氣壓感測單元101感測該第二電容CAP2以產生一第二電容感測訊號SCAP2。 Please refer to the first figure, which is a schematic diagram of the sensing device 10 according to a preferred embodiment of the disclosure. Please refer to the three-dimensional view and the cross-sectional view in the first figure together. The sensing device 10 includes a semiconductor substrate 100, a carrier board 12, an air pressure sensing unit 101, a humidity sensing unit 102, and a temperature sensing unit 103. The semiconductor substrate 100 in the perspective view has not yet been coupled with the carrier board 12, while in the cross-sectional view, the semiconductor substrate 100 has been coupled with the carrier board 12. The semiconductor substrate 100 has a first material portion 1001, a second material portion 1002, and a third material portion 1003. The air pressure sensing unit 101 is coupled to the first material portion 1001 and includes a first electrode layer 1011, a cavity 1013, and a second electrode layer 1012 to form a gas pressure capacitor 1014. The cavity 1013 is disposed between the first electrode layer 1011 and the carrier 12 to form a closed space with a fluid, wherein the first material portion 1001 has a first opening The back cavity OPNC1, the first open back cavity OPNC1 and the carrier board 12 form the cavity 1013, and both sides of the first electrode layer 1011 have a trench TH outside the enclosed space to lower the first electrode The rigidity of the layer is 1011. The humidity sensing unit 102 is coupled to the second material portion 1002, and has a columnar electrode stack 1021 forming a plurality of spacing spaces SH and an interdigital configuration FI, and a sensing material disposed in the plurality of spacing spaces SH 1022, wherein the second material portion 1002 has a second open back cavity OPNC2, and the carrier board 12 has an opening OPN at the second open back cavity OPNC2 to increase a contact area of the humidity sensing unit 102 ARA. In the perspective view, the semiconductor substrate 100 has not been processed, and therefore has not yet the first open back cavity OPNC1 and the second open back cavity OPNC2, while in the cross-sectional view, the semiconductor substrate 100 has been processed to form the first open back cavity OPNC1 and OPNC2. The open back cavity OPNC1 and the second open back cavity OPNC2, and the carrier board 12 is also processed to form the opening OPN. The temperature sensing unit 103 is coupled to the third material portion 1003, wherein the temperature sensing unit 103 includes a P-type semiconductor region 103P and an N-type semiconductor region 103N to form a diode element DIO; wherein: the humidity The sensing unit 102 and the air pressure sensing unit 101 respectively have a first capacitor CAP1 and a second capacitor CAP2. The sensing material 1022 has a dielectric constant DIC. Under the condition that the sensing material 1022 changes the dielectric constant DIC by releasing its moisture MOI or absorbing moisture MOI in the air to cause the first capacitance CAP1 to change, the humidity sensing unit 101 senses the The first capacitor CAP1 generates a first capacitance sensing signal SCAP1. There is a distance SP between the first electrode layer 1011 and the second electrode layer 1012. Under the condition that the first electrode layer 1011 is deformed to change the spacing SP to cause the second capacitance CAP2 to change, the air pressure sensing unit 101 senses the second capacitance CAP2 to generate a second capacitance sensing signal SCAP2.

在本揭示的任一實施例中，例如在第一圖中，該第三材料部分1003與該第一材料部分1001和該第二材料部分1002可部分重疊。當該感測裝置10是經由處理一矽晶圓而被製造時，該第一開放背腔OPNC1是與該第二開放背腔OPNC2分別藉由蝕刻該半導體基材100的該第一材料部分1001與該第二材料部分1002所形成，其中該腔體1013為該氣壓感測單元103的一封閉背腔CBC。當該感測裝置10是經由將該矽晶圓切割成複數裸晶而被製造時，該第一開放背腔OPNC1與該第二開放背腔OPNC2是分別藉由雷射鑽孔該半導體基材100的該第一材料部分1001與該第二材料部分1002所形成。在該第一電極層1011的兩側的各該溝槽TH增加該氣壓式電容器1014的一靈敏度。該氣壓感測單元101所感測的一氣壓P與該第二電容CAP2呈一正比關係，其中該氣壓P是一環境氣壓。該環境氣壓P使該第一電極層1011的一中間區域CREG變形。該濕度感測單元102所感測的一濕度與該第一電容CAP1呈一正比關係。該柱狀電極堆疊層1021包含一第一柱狀電極層1021-1、以及與該第一柱狀電極層1021-1形成指叉配置FI的一第二柱狀電極層1021-2，且該第一柱狀電極層1021-1的每個電極層之間、以及該第二柱狀電極層1021-2的每個電極層之間皆藉由一通孔TRH而彼此電性連接。該感測材料1022為一聚醯亞氨(Polymide,PI)。在該感測材料1022與該柱狀電極堆疊層1021之間具有一薄膜FLM，以防止濕氣MOI或其它腐蝕性氣體侵蝕該柱狀金屬堆疊層1021，其中該薄膜FLM為聚對二甲苯(Parylene C)薄膜。 In any embodiment of the present disclosure, for example, in the first figure, the third material portion 1003 and the first material portion 1001 and the second material portion 1002 may partially overlap. Should feel When the test device 10 is manufactured by processing a silicon wafer, the first open back cavity OPNC1 and the second open back cavity OPNC2 are respectively etched by etching the first material portion 1001 and the first material portion 1001 of the semiconductor substrate 100 Two material parts 1002 are formed, wherein the cavity 1013 is a closed back cavity CBC of the air pressure sensing unit 103. When the sensing device 10 is manufactured by cutting the silicon wafer into a plurality of dies, the first open back cavity OPNC1 and the second open back cavity OPNC2 are respectively drilled into the semiconductor substrate by laser The first material portion 1001 and the second material portion 1002 of 100 are formed. Each of the trenches TH on both sides of the first electrode layer 1011 increases a sensitivity of the gas pressure capacitor 1014. A pressure P sensed by the pressure sensing unit 101 is in a proportional relationship with the second capacitor CAP2, wherein the pressure P is an ambient pressure. The ambient pressure P deforms a middle region CREG of the first electrode layer 1011. The humidity sensed by the humidity sensing unit 102 is in a proportional relationship with the first capacitor CAP1. The columnar electrode stack 1021 includes a first columnar electrode layer 1021-1 and a second columnar electrode layer 1021-2 forming an interdigitated configuration FI with the first columnar electrode layer 1021-1, and the Each electrode layer of the first columnar electrode layer 1021-1 and each electrode layer of the second columnar electrode layer 1021-2 are electrically connected to each other through a through hole TRH. The sensing material 1022 is a polyimide (PI). There is a thin film FLM between the sensing material 1022 and the columnar electrode stack 1021 to prevent moisture MOI or other corrosive gases from corroding the columnar metal stack 1021, wherein the thin film FLM is parylene ( Parylene C) film.

在本揭示的任一實施例中，該感測裝置10可為水平配置複數感測單元101,102,103的一感測晶片，並具有一溫度TEP。例如在第一圖中，在該二極體元件DIO的上方具有一溝槽TTH，藉以感測該溫度TEP。該二極體元件DIO響應該溫度TEP而形成一電壓VTEP，且該溫度感測單元103感測該電壓而產生一溫度感測訊號STEMP，其中該溫度TEP與該電壓VTEP呈一反比關係，其與二極體元件DIO的溫度與電壓曲線相關。該溫度感測單元103具有一第一面積TARA，該氣壓感測單元101具有一第二面積PARA，該濕度感測單元102具有一第三面積HARA，該第二面積PARA與該第三面積HARA約略相等，且該第一面積TARA遠小於該第二面積PARA和該第三面積HARA的每一面積。該溫度感測單元103配置於該氣壓感測單元101、或該濕度感測單元102附近，且不受該氣壓感測單元101所量測的一環境氣壓P、或該濕度感測單元102的一環境濕度所影響。 In any embodiment of the present disclosure, the sensing device 10 can be a sensing chip with a plurality of sensing units 101, 102, 103 arranged horizontally, and has a temperature TEP. For example, in the first figure, there is a trench TTH above the diode element DIO to sense the temperature TEP. The diode element DIO responds to the temperature TEP to form a voltage VTEP, and the temperature sensing unit 103 senses the voltage to generate a temperature sensing signal STEMP, wherein the temperature TEP and the voltage VTEP are the same The inverse relationship is related to the temperature and voltage curve of the diode element DIO. The temperature sensing unit 103 has a first area TARA, the air pressure sensing unit 101 has a second area PARA, the humidity sensing unit 102 has a third area HARA, the second area PARA and the third area HARA They are approximately equal, and the first area TARA is much smaller than each of the second area PARA and the third area HARA. The temperature sensing unit 103 is disposed near the air pressure sensing unit 101 or the humidity sensing unit 102, and is not subject to an ambient air pressure P measured by the air pressure sensing unit 101 or the humidity sensing unit 102 Affected by environmental humidity.

請參閱第二圖，其為本揭示較佳實施例製造一感測裝置10之方法S10的示意圖，請參閱第三圖A至第三圖E，其為本揭示較佳實施例感測裝置10在各製造過程中的示意圖。請合併參閱第一圖、第二圖、以及第三圖A至第三圖E，該方法S10包含下列步驟：步驟S101，提供用於形成複數感測單元101,102,103的一前置結構14，其中該前置結構14包含一基材100、一第一電極層1011、一第二電極層1012以及一柱狀電極堆疊層1021，且該基材100具有一第一材料部分1001以及一第二材料部分1002。步驟S102，蝕刻該第一材料部分1001的一第一子部分1001P與該第二材料部分1002的一第二子部分1002P，以分別形成一第一開放背腔OPNC1以及一第二開放背腔OPNC2。步驟S103，蝕刻該第一電極層1011與該第二電極層1012的周邊部分101P，使該第一電極層1011的兩側各具有一溝槽TH，並蝕刻該柱狀電極堆疊層1021的一部份1021P，以形成複數間隔空間SH。步驟S104，填入一感測材料1022於該複數間隔空間SH，以形成該感測裝置10的一半成品16。步驟S105，結合該半成品105與一載板12，以分別藉由使用該第二材料部分1002與該第一材料部分1001而形成具有一第一電容CAP1的一濕度感測單元102以及具有一第二電容CAP2的一氣壓感測單元101，其中該第一電極層1011具一撓性，其兩側的各該溝槽TH增加該撓性，該第一電極層1011根據一環境氣壓P之一變化來量測該第二電容CAP2，該感測材料1022用以感測一環境之一濕度，且該第二開放背腔OPNC2加速該濕度感測單元102的一反應時間。 Please refer to the second figure, which is a schematic diagram of the method S10 of manufacturing a sensing device 10 according to the preferred embodiment of the present disclosure. Please refer to the third figures A to E, which are the preferred embodiment of the sensing device 10 of the present disclosure. Schematic diagram of each manufacturing process. Please refer to the first figure, the second figure, and the third figure A to the third figure E. The method S10 includes the following steps: step S101, providing a pre-structure 14 for forming a plurality of sensing units 101, 102, 103, wherein the The front structure 14 includes a substrate 100, a first electrode layer 1011, a second electrode layer 1012, and a columnar electrode stack layer 1021, and the substrate 100 has a first material portion 1001 and a second material portion 1002. Step S102, etching a first sub-portion 1001P of the first material portion 1001 and a second sub-portion 1002P of the second material portion 1002 to respectively form a first open back cavity OPNC1 and a second open back cavity OPNC2 . Step S103, etching the peripheral portion 101P of the first electrode layer 1011 and the second electrode layer 1012 so that both sides of the first electrode layer 1011 have a trench TH, and etching a part of the columnar electrode stack 1021 Part 1021P to form a complex space SH. In step S104, a sensing material 1022 is filled in the plurality of spacing spaces SH to form the semi-finished product 16 of the sensing device 10. Step S105, combining the semi-finished product 105 and a carrier board 12 to form a humidity with a first capacitor CAP1 by using the second material portion 1002 and the first material portion 1001, respectively The sensing unit 102 and an air pressure sensing unit 101 having a second capacitor CAP2, wherein the first electrode layer 1011 has a flexibility, the grooves TH on both sides thereof increase the flexibility, and the first electrode layer 1011 measures the second capacitance CAP2 according to a change in an ambient air pressure P, the sensing material 1022 is used to sense a humidity in an environment, and the second open back cavity OPNC2 accelerates a humidity sensing unit 102 Reaction time.

在上述步驟S103中，蝕刻該第一電極層1011與該第二電極層1012的周邊部分101P包括對晶片的正反兩面進行金屬濕蝕刻，使該第一電極層1011的兩側各具有一溝槽TH，並蝕刻該柱狀電極堆疊層1021的一部份1021P，其亦包括對晶片的正反兩面進行金屬濕蝕刻，該部分1021P包括針兩柱狀電極柱中間的電極柱。 In the above step S103, etching the peripheral portion 101P of the first electrode layer 1011 and the second electrode layer 1012 includes performing metal wet etching on the front and back sides of the wafer, so that the first electrode layer 1011 has a groove on each side. Groove TH, and etch a part 1021P of the columnar electrode stack 1021, which also includes wet etching of the front and back sides of the wafer, and the part 1021P includes the electrode column between the two columnar electrode columns of the needle.

在本揭示的任一實施例中，若是使用將晶圓切割後所形成的裸晶來加工，則可使用雷射鑽孔來代替蝕刻如第三圖F所示，第三圖F為本揭示較佳實施例使用雷射鑽孔該基材100的示意圖。例如在第三圖F中先以雷射鑽孔該第一材料部分1001與該第二材料部份1002到達一第一深度DEP1，再利用感應耦合電漿蝕刻(inductively coupled plasma)，或者簡稱ICP，然後如第三圖B所示，繼續蝕刻到達第二深度DEP2。該方法S10還包含下列步驟：當該感測裝置10是經由處理一矽晶圓而被製造時，該第一開放背腔OPNC1是與該第二開放背腔OPNC2分別藉由蝕刻該半導體基材100的該第一材料部分1001與該第二材料部分1002所形成，其中該腔體1013為該氣壓感測單元103的一封閉背腔CBC。當該感測裝置10是經由將該矽晶圓切割成複數裸晶而被製造時，該第一開放背腔OPNC1與該第二開放背腔OPNC2是分別藉由雷射鑽孔該半導體基材100的該第一材料部分1001與該第二材料部分1002所形成。 In any embodiment of the present disclosure, if the die formed by cutting the wafer is used for processing, laser drilling can be used instead of etching. As shown in the third image F, the third image F is the present disclosure A schematic diagram of a preferred embodiment using a laser to drill the substrate 100. For example, in the third image F, the first material portion 1001 and the second material portion 1002 are first drilled by laser to reach a first depth DEP1, and then inductively coupled plasma etching (inductively coupled plasma), or ICP for short, is used. , And then as shown in the third figure B, continue to etch to the second depth DEP2. The method S10 also includes the following steps: when the sensing device 10 is manufactured by processing a silicon wafer, the first open back cavity OPNC1 and the second open back cavity OPNC2 are respectively etched by etching the semiconductor substrate The first material portion 1001 and the second material portion 1002 of 100 are formed, wherein the cavity 1013 is a closed back cavity CBC of the air pressure sensing unit 103. When the sensing device 10 is manufactured by cutting the silicon wafer into a plurality of dies, the first open back cavity OPNC1 and the second open back cavity OPNC2 are respectively drilled into the semiconductor substrate by laser 100 of the first material portion 1001 and the The second material portion 1002 is formed.

在本揭示的任一實施例中，請參閱第三圖E，該方法S10更包含下列步驟：使用雷射鑽孔以形成該複數連接墊PAD，並將該複數訊號線SL分別對應連接至該複數連接墊PAD；以及使用一氣密膠18將該感測晶片SC封裝在該載板12上，其中該載板12為一PCB板。 In any embodiment of the present disclosure, please refer to Figure E. The method S10 further includes the following steps: using laser drilling to form the plurality of connection pads PAD, and respectively connect the plurality of signal lines SL to the A plurality of connecting pads PAD; and using an airtight glue 18 to package the sensing chip SC on the carrier board 12, wherein the carrier board 12 is a PCB board.

在本揭示的任一實施例中，該基材100為一半導體基材。該柱狀電極堆疊層1021包含一第一柱狀電極層1021-1、以及與該第一柱狀電極層1021-1形成指叉配置FI的一第二柱狀電極層1021-2，且該第一柱狀電極層1021-1的每個電極層之間、以及該第二柱狀電極層1021-2的每個電極層之間皆藉由一通孔TRH而彼此電性連接。這種第一柱狀電極層1021-1以及第二柱狀電極層1021-2餅非僅在單一平面，而是立體堆疊，因此加大兩者之間的工作面積，因而可提升第一電容CAP1，擴大該濕度感測單元102的量測範圍。該感測材料1022為一聚醯亞氨(Polymide,PI)。在該感測材料1022與該柱狀電極堆疊層1021之間具有一薄膜FLM，以防止濕氣MOI或其它腐蝕性氣體侵蝕該柱狀金屬堆疊層1021，其中該薄膜FLM為聚對二甲苯(Parylene C)薄膜。 In any embodiment of the present disclosure, the substrate 100 is a semiconductor substrate. The columnar electrode stack 1021 includes a first columnar electrode layer 1021-1 and a second columnar electrode layer 1021-2 forming an interdigitated configuration FI with the first columnar electrode layer 1021-1, and the Each electrode layer of the first columnar electrode layer 1021-1 and each electrode layer of the second columnar electrode layer 1021-2 are electrically connected to each other through a through hole TRH. The first columnar electrode layer 1021-1 and the second columnar electrode layer 1021-2 are not only on a single plane, but are stacked three-dimensionally. Therefore, the working area between the two is enlarged, and the first capacitance can be improved. CAP1, expand the measurement range of the humidity sensing unit 102. The sensing material 1022 is a polyimide (PI). There is a thin film FLM between the sensing material 1022 and the columnar electrode stack 1021 to prevent moisture MOI or other corrosive gases from corroding the columnar metal stack 1021, wherein the thin film FLM is parylene ( Parylene C) film.

在本揭示的任一實施例中，該基材100還具有一第三材料部分1003，該感測裝置10還包含一溫度感測單元103，該溫度感測單元103藉由使用該基材100的該第三材料部分1003而被形成，該第三材料部分1003與該第一材料部分1001和該第二材料部分1002可部分重疊，且該溫度感測單元103包括一P型半導體區103P和一N型半導體區103N，以形成一二極體元件DIO。該溫度感測單元103配置於該氣壓感測單元101、或該濕度感測單元102附近，且不受該氣壓感測單元101所量測的該環境氣壓P、或該濕度感測單元102的該環境的該濕度所影響。 In any embodiment of the present disclosure, the substrate 100 further has a third material portion 1003, and the sensing device 10 further includes a temperature sensing unit 103 that uses the substrate 100 The third material portion 1003 is formed, the third material portion 1003 may partially overlap the first material portion 1001 and the second material portion 1002, and the temperature sensing unit 103 includes a P-type semiconductor region 103P and An N-type semiconductor region 103N to form a diode device DIO. The temperature sensing unit 103 is disposed near the air pressure sensing unit 101 or the humidity sensing unit 102, and is not subject to the ambient air pressure P or the humidity sensing measured by the air pressure sensing unit 101 The humidity of the environment of the unit 102 is affected.

請參閱第四圖，其為本揭示較佳實施例濕度感測單元102的靈敏度與反應時間的曲線的示意圖。靈敏度的曲線圖中的橫軸代表環境的相對濕度，以百分比%為單位，縱軸代表濕度感測單元102量測到的第一電容CAP1的數值，以pF為單位，相對溼度RH每上升或下降一個百分比時，電容值上升或下降5.45fF(1 femto Farad=10^-15 Farad)。反應時間的曲線圖中的橫軸代表感測材料1022吸收外界環境中濕氣MOI的反應時間RT，以秒為單位，縱軸代表感測材料1022中所吸收到的水分子濃度，以每立方公尺莫耳數為單位。請同時參閱第一圖、第二圖、以及第四圖，在本揭示的任一實施例中，該濕度感測單元102所感測的一濕度RH與該第一電容CAP1呈一正比關係，該方法S10更包含下列步驟：藉由使用該第二材料部分1002所形成的該第二開放背腔OPNC2係用以減少該濕度感測單元102的一反應時間RT，從第四圖中濕度感測單元102的反應曲線圖可知，具有該第二開放背腔OPNC2的濕度感測單元102的反應時間RT1約為5.5秒就可達到預定的感測材料1022吸收到濕氣MOI的濃度；而不具開放背腔的濕度感測單元的反應時間RT2約為26.6秒才能達到預定的感測材料1022吸收到水氣MOI的濃度，其所減少的反應時間相當顯著。 Please refer to FIG. 4, which is a schematic diagram showing the sensitivity and response time of the humidity sensing unit 102 according to the preferred embodiment of the disclosure. The horizontal axis in the sensitivity graph represents the relative humidity of the environment, in percentage %, and the vertical axis represents the value of the first capacitance CAP1 measured by the humidity sensing unit 102. In pF, the relative humidity RH rises or When it decreases by a percentage, the capacitance value increases or decreases by 5.45fF (1 femto Farad=10 ^-15 Farad). The horizontal axis of the reaction time graph represents the reaction time RT of the sensing material 1022 absorbing moisture MOI in the external environment, in seconds, and the vertical axis represents the concentration of water molecules absorbed in the sensing material 1022, in units of each cubic meter. The number of moles in meters is a unit. Please refer to the first, second, and fourth diagrams at the same time. In any embodiment of the present disclosure, a humidity RH sensed by the humidity sensing unit 102 is in a proportional relationship with the first capacitor CAP1, and the The method S10 further includes the following steps: the second open back cavity OPNC2 formed by using the second material portion 1002 is used to reduce a response time RT of the humidity sensing unit 102, and the humidity is sensed from the fourth figure The reaction curve diagram of the unit 102 shows that the reaction time RT1 of the humidity sensing unit 102 with the second open back cavity OPNC2 is about 5.5 seconds, which can reach the predetermined concentration of moisture MOI absorbed by the sensing material 1022; The reaction time RT2 of the humidity sensing unit in the back cavity is about 26.6 seconds to reach the predetermined concentration of water vapor MOI absorbed by the sensing material 1022, and the reduced reaction time is quite significant.

請參閱第五圖，其為本揭示較佳實施例氣壓感測單元101的靈敏度的曲線的示意圖。橫軸代表環境氣壓P，以kPa為單位，縱軸代表該氣壓感測單元101因應環境氣壓P的變化所量測到的電容變化值，以Pf為單位。請合併參閱第一圖與第五圖，該氣壓感測單元101所感測的一氣壓P與該第二電容CAP2呈一正比關係，其中該氣壓P是一環境氣壓P。該環境氣壓 P使該第一電極層1011的一中間區域CREG變形。在該第一電極層1011的兩側的各該溝槽TH增加該氣壓式電容器1014的一靈敏度PS，該靈敏度PS約為0.79fF/kPa，由於在該第一電極層1011兩側的溝槽TH降低了在該第一電極層1011兩側的剛性，從而增加了該第一電極層1011的一中間區域CREG的可撓性，使其更容易變形，因此可達到不錯的靈敏度0.79Ff/kPa。 Please refer to FIG. 5, which is a schematic diagram of the sensitivity curve of the air pressure sensing unit 101 according to the preferred embodiment of the disclosure. The horizontal axis represents the ambient air pressure P in kPa, and the vertical axis represents the capacitance change value measured by the air pressure sensing unit 101 in response to changes in the ambient air pressure P, in Pf as the unit. Please refer to the first and fifth figures together. A pressure P sensed by the pressure sensing unit 101 is in a proportional relationship with the second capacitor CAP2, wherein the pressure P is an ambient pressure P. The ambient air pressure P deforms a middle region CREG of the first electrode layer 1011. The grooves TH on both sides of the first electrode layer 1011 increase a sensitivity PS of the gas pressure capacitor 1014, which is about 0.79 fF/kPa, because the grooves on both sides of the first electrode layer 1011 TH reduces the rigidity on both sides of the first electrode layer 1011, thereby increasing the flexibility of a middle area CREG of the first electrode layer 1011, making it easier to deform, and thus a good sensitivity of 0.79Ff/kPa can be achieved .

請參閱第六圖，其為本揭示較佳實施例濕度感測晶片20的示意圖。請合併參考第六圖中的立體圖與剖面圖。在立體圖中的該基板200尚未與該載板22耦合，而在剖面圖中該基板200則已經與該載板22耦合。該濕度感測晶片20包含一基板200、一絕緣層2023、以及一感測材料2022。該基板200具一下表面200D及相對於該下表面200D之一基板上表面200U。該絕緣層2023設置於該基板上表面200U上，且具複數容置空間SH、一絕緣層下表面2023D、以及一絕緣層上表面2023U。該感測材料2022設置於該複數容置空間SH，其特徵在於該絕緣層下表面2023D相對於該複數容置空間SH之部分係經鏤空，俾使該感測材料2022自該絕緣層上表面2023U及該絕緣層下表面2023D感測一環境之一濕度RH。 Please refer to FIG. 6, which is a schematic diagram of the humidity sensor chip 20 according to the preferred embodiment of the disclosure. Please refer to the three-dimensional view and the cross-sectional view in Figure 6 together. The substrate 200 in the perspective view has not yet been coupled with the carrier board 22, while in the cross-sectional view, the substrate 200 has been coupled with the carrier board 22. The humidity sensor chip 20 includes a substrate 200, an insulating layer 2023, and a sensing material 2022. The substrate 200 has a lower surface 200D and an upper surface 200U of the substrate opposite to the lower surface 200D. The insulating layer 2023 is disposed on the upper surface 200U of the substrate, and has a plurality of accommodating spaces SH, a lower surface of the insulating layer 2023D, and an upper surface of the insulating layer 2023U. The sensing material 2022 is disposed in the plurality of accommodating spaces SH, and is characterized in that the portion of the lower surface of the insulating layer 2023D relative to the plurality of accommodating spaces SH is hollowed out, so that the sensing material 2022 is removed from the upper surface of the insulating layer 2023U and the lower surface 2023D of the insulating layer sense a humidity RH of an environment.

在第六圖中的立體圖的該基板200尚未加工，因此尚未具有第二開放背腔OPNC2，而在剖面圖中該基板200則已經加工，而形成第二開放背腔OPNC2，且該載板22也經過加工後形成該開口OPN。在本揭示的任一實施例中，在該絕緣層2023內之複數容置空間SH具複數電極區2021E、且該基板200相對於該複數電極區2021E之部分亦被鏤空。 The substrate 200 in the perspective view in Figure 6 has not been processed yet, and therefore does not yet have the second open back cavity OPNC2, while in the cross-sectional view, the substrate 200 has been processed to form a second open back cavity OPNC2, and the carrier board 22 The opening OPN is also formed after processing. In any embodiment of the present disclosure, the plurality of accommodating spaces SH in the insulating layer 2023 has a plurality of electrode regions 2021E, and the portion of the substrate 200 relative to the plurality of electrode regions 2021E is also hollowed out.

在第六圖中的溼度感測晶片20可應用並整合於第一圖中的感測裝置10，與氣壓感測單元101、以及溫度感測單元103水平配置，形成多種類的感測裝置，此互相組合而形成的感測裝置可參閱前文，因此不再贅述。 The humidity sensing chip 20 in the sixth figure can be applied and integrated with the sensing device 10 in the first figure, and the air pressure sensing unit 101 and the temperature sensing unit 103 are arranged horizontally to form There are many types of sensing devices, and the sensing devices formed by combining these can refer to the foregoing, so the details are not repeated here.

在本揭示的任一實施例中，該基板200為具有一第二材料部分2002的一半導體基板。該感測晶片20的該基板200與一載板22結合。該濕度感測單元202耦合於該第二材料部分2002。該感測晶片20為水平配置複數感測單元的一感測晶片。該濕度感測單元202具有形成複數間隔空間SH和指叉配置FI的一柱狀電極堆疊層2021、以及配置於該複數間隔空間SH中的一感測材料2022，其中該半導體基板的該第二材料部分2002具有一第二開放背腔OPNC2，且該載板22在該第二開放背腔OPNC2的地方具有一開口OPN，以增加該濕度感測單元202的一接觸面積HARA。該濕度感測單元202具有一第一電性參數。該第一電性參數為一第一電容CAP1。該感測材料2022具有一介電常數DIC。在該感測材料2022藉由釋放其濕氣MOI或吸收空氣中的濕氣MOI而使該介電常數DIC改變以造成該第一電容CAP1改變的條件下，該濕度感測單元202感測該第一電容CAP1，以產生一第一電容感測訊號SCAP1。 In any embodiment of the present disclosure, the substrate 200 is a semiconductor substrate with a second material portion 2002. The substrate 200 of the sensor chip 20 is combined with a carrier 22. The humidity sensing unit 202 is coupled to the second material part 2002. The sensor chip 20 is a sensor chip with a plurality of sensor units arranged horizontally. The humidity sensing unit 202 has a columnar electrode stack 2021 forming a plurality of spacing spaces SH and an interdigital configuration FI, and a sensing material 2022 arranged in the plurality of spacing spaces SH, wherein the second part of the semiconductor substrate The material portion 2002 has a second open back cavity OPNC2, and the carrier board 22 has an opening OPN at the second open back cavity OPNC2 to increase a contact area HARA of the humidity sensing unit 202. The humidity sensing unit 202 has a first electrical parameter. The first electrical parameter is a first capacitor CAP1. The sensing material 2022 has a dielectric constant DIC. Under the condition that the sensing material 2022 changes the dielectric constant DIC by releasing its moisture MOI or absorbing moisture MOI in the air to cause the first capacitance CAP1 to change, the humidity sensing unit 202 senses the The first capacitor CAP1 generates a first capacitance sensing signal SCAP1.

請參閱第七圖，其為本揭示較佳實施例感測裝置30的示意圖。該感測裝置30包含一濕度感測單元302，該濕度感測單元302包含一正面302U及相對於該正面302U之一背面302D、一感測材料3022、以及一開放背腔OPNC2。該感測材料3022位於該正面302U，該開放背腔OPNC2形成於該背面302D以使該感測材料3022自該開放背腔OPNC2感測一環境之一濕度RH。請合併參閱第一圖以及第七圖，第七圖中的感測裝置30僅示意出溼度感測單元301，而其他還可包括如同第一圖中感測裝置10的氣壓感測單元 101、以及溫度感測單元103，而形成另一實施例，因此不再贅述。 Please refer to FIG. 7, which is a schematic diagram of the sensing device 30 according to the preferred embodiment of the disclosure. The sensing device 30 includes a humidity sensing unit 302. The humidity sensing unit 302 includes a front surface 302U and a back surface 302D opposite to the front surface 302U, a sensing material 3022, and an open back cavity OPNC2. The sensing material 3022 is located on the front surface 302U, and the open back cavity OPNC2 is formed on the back surface 302D so that the sensing material 3022 senses an environmental humidity RH from the open back cavity OPNC2. Please refer to the first figure and the seventh figure together, the sensing device 30 in the seventh figure only shows the humidity sensing unit 301, and others can also include the air pressure sensing unit as the sensing device 10 in the first figure 101 and the temperature sensing unit 103 form another embodiment, so the details are not repeated here.

本案所提出之發明將可由上述的實施例說明而得到充分瞭解，使得所屬技術領域中具有通常知識者可以據以完成之，然而本案之實施並非可由下列實施例而被限制其實施型態，所屬技術領域中具有通常知識者仍可依據除既已揭露之實施例的精神，推演出其他實施例，該等實施例皆當屬於本發明之範圍。 The invention proposed in this case will be fully understood from the description of the above-mentioned embodiments, so that those with ordinary knowledge in the relevant technical field can complete it according to it. However, the implementation of this case is not limited by the following embodiments. Those with ordinary knowledge in the technical field can still deduce other embodiments based on the spirit of the disclosed embodiments, and these embodiments should fall within the scope of the present invention.

本發明實屬難能的創新發明，深具產業價值，援依法提出申請。本發明得由熟悉技藝之人任施匠思而為諸般修飾，然不脫如附申請專利範圍所欲保護者。 The present invention is really a difficult innovation and has deep industrial value. The present invention can be modified in many ways by those who are familiar with the art. However, it does not deviate from those who wish to protect the scope of the patent application.

20:濕度感測晶片 20: Humidity sensor chip

200:基板 200: substrate

2023:絕緣層 2023: insulating layer

2022:感測材料 2022: sensing material

200D:下表面 200D: lower surface

200U:基板上表面 200U: The upper surface of the substrate

SH:複數容置空間 SH: plural housing space

2023D:絕緣層下表面 2023D: Lower surface of insulating layer

2023U:絕緣層上表面 2023U: The upper surface of the insulating layer

Claims

一種感測裝置，包含：一半導體基材，具有一第一材料部分、一第二材料部分、以及一第三材料部分；一載板，耦合於該半導體基材；一氣壓感測單元，耦合於該第一材料部分，且包含一第一電極層、一腔體、以及一第二電極層，以形成一氣壓式電容器，該腔體配置於該第一電極層與該載板之間，而形成具有一流體的一密閉空間，其中該第一材料部分具有一第一開放背腔，該第一開放背腔與該載板形成該腔體，該第一電極層的兩側各具有在該密閉空間外的一溝槽，以降低該第一電極層的剛性；一濕度感測單元，耦合於該第二材料部分，並具有形成複數間隔空間和指叉配置的一柱狀電極堆疊層、以及配置於該複數間隔空間中的一感測材料，其中該第二材料部分具有一第二開放背腔，且該載板在該第二開放背腔的地方具有一開口，以增加該濕度感測單元的一接觸面積；以及一溫度感測單元，耦合於該第三材料部分，其中該溫度感測單元包括一P型半導體區和一N型半導體區，以形成一二極體元件；其中：該濕度感測單元以及該氣壓感測單元分別具有一第一電容與一第二電容；該感測材料具有一介電常數；以及在該感測材料藉由釋放其濕氣或吸收空氣中的濕氣而使該介電常數改變以造成該第一電容改變的條件下，該濕度感測單元感測該第一電容以產生一第一電容感測訊號。該第一電極層與該第二電極層之間具有一間距；以及在該第一電極層藉由變形而使該間距改變以造成該第二電容改變的條件下，該氣壓感測單元感測該第二電容以產生一第二電容感測訊號。 A sensing device, comprising: a semiconductor substrate having a first material portion, a second material portion, and a third material portion; a carrier board coupled to the semiconductor substrate; an air pressure sensing unit coupled On the first material part, and including a first electrode layer, a cavity, and a second electrode layer to form a gas pressure capacitor, the cavity is disposed between the first electrode layer and the carrier, A closed space with a fluid is formed, wherein the first material part has a first open back cavity, the first open back cavity and the carrier plate form the cavity, and both sides of the first electrode layer have A groove outside the enclosed space to reduce the rigidity of the first electrode layer; a humidity sensing unit, coupled to the second material part, and having a columnar electrode stack layer forming a plurality of spacing spaces and a finger fork configuration And a sensing material arranged in the plurality of compartments, wherein the second material part has a second open back cavity, and the carrier plate has an opening at the second open back cavity to increase the humidity A contact area of the sensing unit; and a temperature sensing unit coupled to the third material portion, wherein the temperature sensing unit includes a P-type semiconductor region and an N-type semiconductor region to form a diode element; Wherein: the humidity sensing unit and the air pressure sensing unit respectively have a first capacitor and a second capacitor; the sensing material has a dielectric constant; and the sensing material releases its moisture or absorbs air Under the condition that the dielectric constant changes to cause the first capacitance to change due to the humidity in the humidity, the humidity sensing unit senses the first capacitance to produce A first capacitive sensing signal is generated. There is a distance between the first electrode layer and the second electrode layer; and under the condition that the first electrode layer is deformed to change the distance to cause the second capacitance to change, the air pressure sensing unit senses The second capacitor generates a second capacitance sensing signal.

如請求項1所述的感測裝置，其中：該第三材料部分與該第一材料部分和該第二材料部分部分重疊；當該感測裝置是經由處理一矽晶圓而被製造時，該第一開放背腔是與該第二開放背腔分別藉由蝕刻該半導體基材的該第一材料部分與該第二材料部分所形成，其中該腔體為該氣壓感測單元的一封閉背腔；當該感測裝置是經由將該矽晶圓切割成複數裸晶而被製造時，該第一開放背腔與該第二開放背腔是分別藉由雷射鑽孔該半導體基材的該第一材料部分與該第二材料部分所形成；在該第一電極層的兩側的各該溝槽增加該氣壓式電容器的一靈敏度；該氣壓感測單元所感測的一氣壓與該第二電容呈一正比關係，其中該氣壓是一環境氣壓；該環境氣壓使該第一電極層的一中間區域變形；該濕度感測單元所感測的一濕度與該第一電容呈一正比關係；該柱狀電極堆疊層包含一第一柱狀電極層、以及與該第一柱狀電極層形成指叉配置的一第二柱狀電極層，且該第一柱狀電極層的每個電極層之間、以及該第二柱狀電極層的每個電極層之間皆藉由一通孔而彼此電性連接；該感測材料為一聚醯亞氨(Polymide,PI)；以及在該感測材料與該柱狀電極堆疊層之間具有一薄膜，以防止濕氣或其它腐蝕性氣體侵蝕該柱狀金屬堆疊層，其中該薄膜為聚對二甲苯(Parylene C)薄膜。 The sensing device according to claim 1, wherein: the third material portion partially overlaps the first material portion and the second material portion; when the sensing device is manufactured by processing a silicon wafer, The first open back cavity and the second open back cavity are respectively formed by etching the first material portion and the second material portion of the semiconductor substrate, wherein the cavity is a closed portion of the air pressure sensing unit Back cavity; when the sensing device is manufactured by cutting the silicon wafer into a plurality of dies, the first open back cavity and the second open back cavity are respectively drilled by the laser to the semiconductor substrate The first material portion and the second material portion are formed; each of the grooves on both sides of the first electrode layer increases a sensitivity of the gas pressure capacitor; a gas pressure sensed by the gas pressure sensing unit and the The second capacitance has a proportional relationship, wherein the air pressure is an ambient air pressure; the ambient air pressure deforms a middle area of the first electrode layer; a humidity sensed by the humidity sensing unit is in a proportional relationship with the first capacitance The columnar electrode stack layer includes a first columnar electrode layer, and a second columnar electrode layer interdigitated with the first columnar electrode layer, and each electrode of the first columnar electrode layer The layers and each electrode layer of the second columnar electrode layer are electrically connected to each other through a through hole; the sensing material is a polyimide (PI); and There is a thin film between the sensing material and the columnar electrode stack to prevent moisture or other corrosive gases from corroding the columnar metal stack, wherein the film is a Parylene C film.

如請求項1所述的感測裝置，其中：該感測裝置為水平配置複數感測單元的一感測晶片，並具有一溫度；該二極體元件響應該溫度而形成一電壓，且該溫度感測單元感測該電壓而產生一溫度感測訊號，其中該溫度與該電壓呈一反比關係；該溫度感測單元具有一第一面積，該氣壓感測單元具有一第二面積，該濕度感測單元具有一第三面積，該第二面積與該第三面積約略相等，且該第一面積遠小於該第二面積和該第三面積的每一面積；以及該溫度感測單元配置於該氣壓感測單元、或該濕度感測單元附近，且不受該氣壓感測單元所量測的一環境氣壓、或該濕度感測單元的一環境濕度所影響。 The sensing device according to claim 1, wherein: the sensing device is a sensing chip in which a plurality of sensing units are arranged horizontally, and has a temperature; the diode element forms a voltage in response to the temperature, and the The temperature sensing unit senses the voltage to generate a temperature sensing signal, wherein the temperature and the voltage have an inverse relationship; the temperature sensing unit has a first area, the air pressure sensing unit has a second area, and the The humidity sensing unit has a third area, the second area is approximately equal to the third area, and the first area is much smaller than each of the second area and the third area; and the temperature sensing unit configuration It is near the air pressure sensing unit or the humidity sensing unit, and is not affected by an ambient air pressure measured by the air pressure sensing unit or an environmental humidity of the humidity sensing unit.

一種製造一感測裝置之方法，包含下列步驟：提供用於形成複數感測單元的一前置結構，其中該前置結構包含一基材、一第一電極層、一第二電極層以及一柱狀電極堆疊層，且該基材具有一第一材料部分以及一第二材料部分；蝕刻該第一材料部分的一第一子部分與該第二材料部分的一第二子部分，以分別形成一第一開放背腔以及一第二開放背腔；蝕刻該第一電極層與該第二電極層的周邊部分，使該第一電極層的兩側各具有一溝槽，並蝕刻該柱狀電極堆疊層的一部分，以形成複數間隔空間；填入一感測材料於該複數間隔空間，以形成該感測裝置的一半成品；以及結合該半成品與一載板，以分別藉由使用該第二材料部分與該第一材料部分而形成具有一第一電容的一濕度感測單元以及具有一第二電容的一氣壓感測單元，其中該第一電極層具一撓性，其兩側的各該溝槽增加該撓性，該第一電極層根據一環境氣壓之一變化來量測該第一電容，該感測材料用以感測一環境之一濕度，且該第二開放背腔加速該濕度感測單元的一反應時間。 A method of manufacturing a sensing device includes the following steps: providing a pre-structure for forming a plurality of sensing units, wherein the pre-structure includes a substrate, a first electrode layer, a second electrode layer, and a The columnar electrode is stacked, and the substrate has a first material portion and a second material portion; a first sub-portion of the first material portion and a second sub-portion of the second material portion are etched to respectively A first open back cavity and a second open back cavity are formed; the peripheral portions of the first electrode layer and the second electrode layer are etched so that there is a groove on each side of the first electrode layer, and the column is etched A part of the stacked layer of the shaped electrode to form a plurality of spacing spaces; Filling a sensing material in the plurality of spaces to form a semi-finished product of the sensing device; and combining the semi-finished product and a carrier board to form the second material portion and the first material portion by using the second material portion and the first material portion respectively. A humidity sensing unit with a first capacitor and an air pressure sensing unit with a second capacitor, wherein the first electrode layer has a flexibility, the grooves on both sides thereof increase the flexibility, the first The electrode layer measures the first capacitance according to a change of an ambient air pressure, the sensing material is used for sensing a humidity of an environment, and the second open back cavity accelerates a response time of the humidity sensing unit.

如請求項4所述的方法，其中：該基材為一半導體基材，且該感測裝置為一感測晶片，並具有複數訊號線以及相對應於該複數訊號線的複數連接墊；該方法更包含下列步驟：使用雷射鑽孔以形成該複數連接墊，並將該複數訊號線分別對應連接至該複數連接墊；以及使用一氣密膠將該感測晶片封裝在該載板上，其中該載板為一PCB板；該方法更包含下列步驟：當該感測裝置是經由處理一矽晶圓而被製造時，該第一開放背腔與該第二開放背腔是分別藉由蝕刻該基材的該第一材料部分與該第二材料部分所形成；以及當該感測裝置是經由將該矽晶圓切割成複數裸晶而被製造時，該第一開放背腔與該第二開放背腔是分別藉由雷射鑽孔該基材的該第一材料部分與該第二材料部分所形成；在該第一電極層的兩側的各該溝槽增加該氣壓式電容器的一靈敏度；該氣壓感測單元所感測的一氣壓與該第二電容呈一正比關係，其中該氣壓是一環境氣壓；該環境氣壓使該第一電極層的一中間區域變形；該基材為一半導體基材；該方法更包含下列步驟：藉由使用該第二材料部分所形成的該第二開放背腔係用以減少該濕度感測單元的一反應時間；該濕度感測單元所感測的一濕度與該第一電容呈一正比關係；該柱狀電極堆疊層包含一第一柱狀電極層、以及與該第一柱狀電極層形成指叉配置的一第二柱狀電極層，且該第一柱狀電極層的每個電極層之間、以及該第二柱狀電極層的每個電極層之間皆藉由一通孔而彼此電性連接；該感測材料為一聚醯亞氨(Polymide,PI)；在該感測材料與該柱狀電極堆疊層之間具有一薄膜，以防止濕氣或其它腐蝕性氣體侵蝕該柱狀金屬堆疊層，其中該薄膜為聚對二甲苯(Parylene C)薄膜；該基材還具有一第三材料部分，該感測裝置還包含一溫度感測單元，該溫度感測單元藉由使用該基材的該第三材料部分而被形成，該第三材料部分與該第一材料部分和該第二材料部分部分重疊，且該溫度感測單元包括一P型半導體區和一N型半導體區，以形成一二極體元件；以及該溫度感測單元配置於該氣壓感測單元、或該濕度感測單元附近，且不受該氣壓感測單元所量測的該環境氣壓、或該濕度感測單元的該環境的該濕度所影響。 The method according to claim 4, wherein: the substrate is a semiconductor substrate, and the sensing device is a sensing chip, and has a plurality of signal lines and a plurality of connection pads corresponding to the plurality of signal lines; the The method further includes the following steps: using laser drilling to form the plurality of connection pads, and respectively connecting the plurality of signal lines to the plurality of connection pads; and using an airtight glue to package the sensing chip on the carrier board, Wherein the carrier board is a PCB board; the method further includes the following steps: when the sensing device is manufactured by processing a silicon wafer, the first open back cavity and the second open back cavity are respectively manufactured by Formed by etching the first material portion and the second material portion of the substrate; and when the sensing device is manufactured by cutting the silicon wafer into a plurality of dies, the first open back cavity and the The second open back cavity is used to drill the first material part of the substrate by laser respectively Is formed by dividing the second material part; each of the grooves on both sides of the first electrode layer increases a sensitivity of the gas pressure capacitor; a gas pressure sensed by the gas pressure sensing unit and the second capacitance are the same In a proportional relationship, the air pressure is an ambient air pressure; the ambient air pressure deforms an intermediate region of the first electrode layer; the substrate is a semiconductor substrate; the method further includes the following steps: by using the second material part The second open back cavity is formed to reduce a reaction time of the humidity sensing unit; a humidity sensed by the humidity sensing unit is in a proportional relationship with the first capacitance; the columnar electrode stack includes A first columnar electrode layer, and a second columnar electrode layer interdigitated with the first columnar electrode layer, and between each electrode layer of the first columnar electrode layer and the second columnar electrode layer Each electrode layer of the columnar electrode layer is electrically connected to each other through a through hole; the sensing material is a polyimide (PI); the sensing material and the columnar electrode stack layer There is a thin film in between to prevent moisture or other corrosive gases from corroding the columnar metal stacked layer, wherein the thin film is a Parylene C thin film; the substrate also has a third material part, the feeling The sensing device further includes a temperature sensing unit formed by using the third material portion of the substrate, the third material portion partially overlapping the first material portion and the second material portion , And the temperature sensing unit includes a P-type semiconductor region and an N-type semiconductor region to form a diode element; and The temperature sensing unit is disposed near the air pressure sensing unit or the humidity sensing unit, and is not affected by the ambient air pressure measured by the air pressure sensing unit or the humidity of the environment of the humidity sensing unit Influence.

一種濕度感測晶片，包含：一基板，具一基板下表面及相對於該基板下表面之一基板上表面；一絕緣層，設置於該基板上表面上，且具複數容置空間、一絕緣層下表面、以及一絕緣層上表面；以及一感測材料，設置於該複數容置空間，其特徵在於該絕緣層下表面相對於該複數容置空間之部分係經鏤空，俾使該感測材料自該絕緣層上表面及該絕緣層下表面感測一環境之一濕度。 A humidity sensing chip includes: a substrate with a lower surface of the substrate and an upper surface of the substrate opposite to the lower surface of the substrate; an insulating layer disposed on the upper surface of the substrate, and has a plurality of accommodating spaces and an insulating layer The lower surface of the insulating layer and the upper surface of an insulating layer; and a sensing material disposed in the plurality of accommodating spaces, characterized in that the portion of the lower surface of the insulating layer relative to the plurality of accommodating spaces is hollowed out to make the sense The measuring material senses the humidity of an environment from the upper surface of the insulating layer and the lower surface of the insulating layer.

如請求項6所述的溼度感測晶片，其中：在該絕緣層內之該複數容置空間具複數電極區、且該基板相對於該複數電極區之部分亦被鏤空；該基板為具有一第二材料部分的一半導體基板；該感測晶片的該基板與一載板結合；該濕度感測單元耦合於該第二材料部分；該感測裝置為水平配置複數感測單元的一感測晶片；該氣壓感測單元包含該指示媒介、該腔體、以及一第二電極層，該指示媒介為一第一電極層，且該腔體配置於該第一電極層與該載板之間，而形成具有一流體的一密閉空間，其中在該密閉空間外且在該第一電極層的兩側各具有在該密閉空間外的一溝槽，以降低該第一電極層的剛性；該濕度感測單元具有形成複數間隔空間和指叉配置的一柱狀電極堆疊層、以及配置於該複數間隔空間中的一感測材料，其中該半導體基板的該第二材料部分具有一第二開放背腔，且該載板在該第二開放背腔的地方具有一開口，以增加該濕度感測單元的一接觸面積；該濕度感測單元具有一第一電性參數，該第一電性參數為一第一電容；該感測材料具有一介電常數；以及在該感測材料藉由釋放其濕氣或吸收空氣中的濕氣而使該介電常數改變以造成該第一電容改變的條件下，該濕度感測單元感測該第一電容，以產生一第一電容感測訊號。 The humidity sensor chip according to claim 6, wherein: the plurality of accommodating spaces in the insulating layer has a plurality of electrode regions, and the portion of the substrate relative to the plurality of electrode regions is also hollowed out; the substrate has a A semiconductor substrate of the second material part; the substrate of the sensing chip is combined with a carrier; the humidity sensing unit is coupled to the second material part; the sensing device is a sensor in which a plurality of sensing units are arranged horizontally Chip; the air pressure sensing unit includes the indicating medium, the cavity, and a second electrode layer, the indicating medium is a first electrode layer, and the cavity is disposed between the first electrode layer and the carrier , Forming a closed space with a fluid, wherein there is a groove outside the closed space outside the closed space and on both sides of the first electrode layer, so as to reduce the rigidity of the first electrode layer; the The humidity sensing unit has a columnar electrode stack forming a plurality of compartments and a finger fork configuration Layer and a sensing material arranged in the plurality of spaces, wherein the second material portion of the semiconductor substrate has a second open back cavity, and the carrier has an opening at the place of the second open back cavity , To increase a contact area of the humidity sensing unit; the humidity sensing unit has a first electrical parameter, the first electrical parameter is a first capacitance; the sensing material has a dielectric constant; and Under the condition that the sensing material changes the dielectric constant by releasing its moisture or absorbing moisture in the air to cause the first capacitance to change, the humidity sensing unit senses the first capacitance to generate a The first capacitance sensing signal.

一種感測裝置，包含：一濕度感測單元，包含一正面及相對於該正面之一背面、一感測材料位於該正面、以及一第一開放背腔形成於該背面以使該感測材料自該第一開放背腔感測一環境之一濕度。 A sensing device includes: a humidity sensing unit, including a front surface and a back surface opposite to the front surface, a sensing material located on the front surface, and a first open back cavity formed on the back surface so that the sensing material The humidity of an environment is sensed from the first open back cavity.

如請求項8所述的感測裝置，其中：該感測裝置還包含一裝置本體，該裝置本體為具有一第一材料部分以及一第二材料部分的一半導體基材，且包含一載板；該氣壓感測單元，耦合於該第一材料部分，並具有一腔體以及反應一環境氣壓之一指示媒介；該氣壓感測單元因應該環境氣壓之一變化而使該指示媒介指示該環境氣壓之一值；該濕度感測單元耦合於該第二材料部分；該感測裝置為水平配置複數感測單元的一感測晶片；該氣壓感測單元包含該指示媒介、該腔體、以及一第二電極層、該指示媒介為一第一電極層，且該腔體配置於該第一電極層與該載板之間，而形成具有一流體的一密閉空間，其中在該密閉空間外且在該第一電極層的兩側各具有在該密閉空間外的一溝槽，以降低該第一電極層的剛性；該濕度感測單元具有形成複數間隔空間和指叉配置的一柱狀電極堆疊層、以及配置於該複數間隔空間中的一感測材料，其中該半導體基材的該第二材料部分具有一第二開放背腔，且該載板在該第二開放背腔的地方具有一開口，以增加該濕度感測單元的一接觸面積；該感測裝置還包含一溫度感測單元，且該半導體基材還具有一第三材料部分；該溫度感測單元耦合於該第三材料部分，該第三材料部分與該第一材料部分和該第二材料部分部分重疊，且該溫度感測單元包括一P型半導體區和一N型半導體區，以形成一二極體元件；該濕度感測單元以及該氣壓感測單元分別具有一第一電性參數與一第二電性參數；該第一電性參數為一第一電容，且該第二電性參數為一第二電容；該感測材料具有一介電常數；在該感測材料藉由釋放其濕氣或吸收空氣中的濕氣而使該介電常數改變以造成該第一電容改變的條件下，該濕度感測單元感測該第一電容，以產生一第一電容感測訊號；該第一電極層與該第二電極層之間具有一間距；以及在該第一電極層藉由變形而使該間距改變以造成該第二電容改變的條件下，該氣壓感測單元感測該第二電容，以產生一第一電容感測訊號。 The sensing device according to claim 8, wherein: the sensing device further includes a device body, the device body being a semiconductor substrate having a first material portion and a second material portion, and including a carrier board The air pressure sensing unit is coupled to the first material portion, and has a cavity and an indicating medium that reflects an ambient air pressure; the air pressure sensing unit causes the indicating medium to indicate the environment due to a change in the ambient air pressure A value of air pressure; the humidity sensing unit is coupled to the second material part; the sensing device is a sensing chip with a plurality of sensing units arranged horizontally; the air pressure sensing unit includes the indicating medium, the cavity, and A second electrode layer, the finger The medium is shown as a first electrode layer, and the cavity is disposed between the first electrode layer and the carrier plate to form a closed space with a fluid, wherein outside the closed space and on the first electrode layer There is a groove on both sides of the enclosed space to reduce the rigidity of the first electrode layer; the humidity sensing unit has a columnar electrode stack layer that forms a plurality of spacing spaces and interdigital configurations, and is arranged in A sensing material in the plurality of spaces, wherein the second material portion of the semiconductor substrate has a second open back cavity, and the carrier has an opening at the second open back cavity to increase the A contact area of the humidity sensing unit; the sensing device further includes a temperature sensing unit, and the semiconductor substrate further has a third material portion; the temperature sensing unit is coupled to the third material portion, the third The material portion partially overlaps the first material portion and the second material portion, and the temperature sensing unit includes a P-type semiconductor region and an N-type semiconductor region to form a diode element; the humidity sensing unit, and The air pressure sensing unit respectively has a first electrical parameter and a second electrical parameter; the first electrical parameter is a first capacitor, and the second electrical parameter is a second capacitor; the sensing material Has a dielectric constant; under the condition that the sensing material changes the dielectric constant by releasing its moisture or absorbing moisture in the air to cause the first capacitance to change, the humidity sensing unit senses the A first capacitor to generate a first capacitive sensing signal; a distance between the first electrode layer and the second electrode layer; and the first electrode layer is deformed to change the distance to cause the first electrode layer Under the condition that the two capacitances are changed, the air pressure sensing unit senses the second capacitance to generate a first capacitance sensing signal.

如請求項9所述的感測裝置，其中：在該第一電極層的兩側的各該溝槽增加該氣壓量測單元的一靈敏度；該氣壓感測單元所感測的一氣壓與該第二電容呈一正比關係，其中該氣壓是該環境氣壓；該環境氣壓使該第一電極層的一中間區域變形；該第二開放背腔以減少該濕度感測單元的該反應時間，其中該載板在該第二開放背腔的地方具有一開口；該濕度感測單元所感測的該濕度與該第一電容呈一正比關係；該柱狀電極堆疊層包含一第一柱狀電極層、以及與該第一柱狀電極層形成指叉配置的一第二柱狀電極層，且該第一柱狀電極層的每個電極層之間、以及該第二柱狀電極層的每個電極層之間皆藉由一通孔而彼此電性連接；該感測材料為一聚醯亞氨(Polymide,PI)；以及在該感測材料與該柱狀電極堆疊層之間具有一薄膜，以防止濕氣或其它腐蝕性氣體侵蝕該柱狀金屬堆疊層，其中該薄膜為聚對二甲苯(Parylene C)薄膜。 The sensing device according to claim 9, wherein: each of the grooves on both sides of the first electrode layer increases a sensitivity of the air pressure measuring unit; the air pressure sensed by the air pressure sensing unit and the first The two capacitors are in a proportional relationship, wherein the air pressure is the ambient air pressure; the ambient air pressure deforms a middle area of the first electrode layer; the second open back cavity reduces the reaction time of the humidity sensing unit, wherein the The carrier has an opening at the second open back cavity; the humidity sensed by the humidity sensing unit is in a proportional relationship with the first capacitance; the columnar electrode stack includes a first columnar electrode layer, And a second columnar electrode layer interdigitated with the first columnar electrode layer, and between each electrode layer of the first columnar electrode layer and each electrode of the second columnar electrode layer The layers are electrically connected to each other by a through hole; the sensing material is a polyimide (Polymide, PI); and there is a thin film between the sensing material and the columnar electrode stack layer to Prevent moisture or other corrosive gases from corroding the columnar metal stack, wherein the film is a Parylene C film.