TWI740133B - Heat treatment apparatus and atmosphere replacement method of heat treatment apparatus - Google Patents

Abstract

本發明提供一種熱處理裝置及熱處理裝置之氣體環境取代方法，該熱處理裝置能夠自供給反應性氣體之供給配管完全地排出反應性氣體，並向該供給配管內填充惰性氣體。 關於本發明之熱處理裝置之氣體環境取代方法，藉由持續進行反應性氣體配管83a之排氣直至供給確認壓力計94之測定值成為第1壓力以下為止，無關於質量流量控制器95之滿刻度尺寸，皆可將殘留氨氣自反應性氣體配管83a完全地排出。又，自反應性氣體配管83a排出氨氣後，持續進行向反應性氣體配管83a之氮氣供給直至供給確認壓力計94之測定值成為高於第1壓力之第2壓力以上為止，藉此可充分地將氮氣供給並填充至反應性氣體配管83a。The present invention provides a heat treatment device and a method for replacing a gas atmosphere of the heat treatment device. The heat treatment device can completely discharge the reactive gas from a supply pipe for supplying the reactive gas, and fill the supply pipe with an inert gas. Regarding the gas environment substitution method of the heat treatment device of the present invention, the reactive gas pipe 83a is continuously exhausted until the measured value of the supply confirmation pressure gauge 94 becomes below the first pressure, regardless of the full scale of the mass flow controller 95 The size can completely discharge the residual ammonia gas from the reactive gas pipe 83a. In addition, after the ammonia gas is discharged from the reactive gas pipe 83a, the nitrogen gas supply to the reactive gas pipe 83a is continued until the measurement value of the supply confirmation pressure gauge 94 becomes the second pressure higher than the first pressure or more. This is sufficient. Nitrogen gas is supplied and filled into the reactive gas pipe 83a.

Description

熱處理裝置及熱處理裝置之氣體環境取代方法Heat treatment device and method for replacing gas environment of heat treatment device

本發明係關於一種藉由對半導體晶圓等薄板狀精密電子基板(以下，簡稱為「基板」)照射光而加熱該基板之熱處理裝置及該熱處理裝置之氣體環境取代方法。The present invention relates to a heat treatment device that heats a thin-plate-shaped precision electronic substrate such as a semiconductor wafer (hereinafter referred to as "substrate") by irradiating the substrate with light, and a method for replacing the gas atmosphere of the heat treatment device.

半導體裝置之製造製程中，於極短時間內將半導體晶圓加熱之閃光燈退火(FLA)受到關注。閃光燈退火為如下熱處理技術：藉由使用氙氣閃光燈(以下，於簡述為「閃光燈」時意指氙氣閃光燈)對半導體晶圓之表面照射閃光，而僅使半導體晶圓之表面於極短時間(數毫秒以下)內升溫。In the manufacturing process of semiconductor devices, flash annealing (FLA), which heats semiconductor wafers in a very short time, has attracted attention. Flash lamp annealing is the following heat treatment technology: by using a xenon flash lamp (hereinafter, simply referred to as "flash lamp" means xenon flash lamp) to irradiate the surface of a semiconductor wafer with flash light, and only make the surface of the semiconductor wafer in a very short time ( The temperature rises within a few milliseconds.

氙氣閃光燈之輻射光譜分佈為紫外區至近紅外區，與先前之鹵素燈相比波長較短，與矽半導體晶圓之基礎吸收帶大致一致。因此，於自氙氣閃光燈對半導體晶圓照射閃光時，透光較少而可使半導體晶圓迅速地升溫。又，亦判明只要為數毫秒以下之極短時間之閃光照射，則可選擇性地僅使半導體晶圓之表面附近升溫。The radiation spectrum of the xenon flash lamp ranges from the ultraviolet region to the near-infrared region. Compared with the previous halogen lamps, the wavelength is shorter, which is roughly the same as the basic absorption band of silicon semiconductor wafers. Therefore, when the semiconductor wafer is irradiated with a flash light from the xenon flash lamp, the light transmission is less and the semiconductor wafer can be heated rapidly. In addition, it has also been found that as long as the flash light is irradiated for a very short time of several milliseconds or less, it is possible to selectively increase the temperature of only the vicinity of the surface of the semiconductor wafer.

此種閃光燈退火被用於需要極短時間之加熱之處理、例如典型為注入至半導體晶圓之雜質之活化。若自閃光燈對藉由離子注入法而注入有雜質之半導體晶圓之表面照射閃光，則能夠於極短時間內使該半導體晶圓之表面升溫至活化溫度，且能夠於不使雜質較深地擴散之情況下，僅實行雜質活化。This flash lamp annealing is used for processes that require extremely short heating, such as activation of impurities typically implanted into semiconductor wafers. If the flash is irradiated from the flash lamp to the surface of the semiconductor wafer implanted with impurities by the ion implantation method, the surface of the semiconductor wafer can be heated to the activation temperature in a very short time, and the impurities can be kept deep. In the case of diffusion, only impurity activation is performed.

另一方面，亦嘗試於氨氣等反應性氣體之氣體環境中進行閃光燈退火。例如，於專利文獻1中揭示有如下內容：於收容了形成有高介電常數閘極絕緣膜(high-k膜)之半導體晶圓之腔室內形成氨氣氣體環境，對該半導體晶圓照射閃光而進行加熱，藉此進行高介電常數閘極絕緣膜之成膜後熱處理。於專利文獻1所揭示之裝置中，在氨氣氣體環境中進行半導體晶圓之熱處理後，將腔室內進行減壓，排出有害之氨氣並取代為氮氣氣體環境後，搬出半導體晶圓。 [先前技術文獻] [專利文獻]On the other hand, an attempt has been made to perform flash lamp annealing in a reactive gas atmosphere such as ammonia. For example, Patent Document 1 discloses the following: an ammonia gas atmosphere is formed in a chamber containing a semiconductor wafer formed with a high-dielectric constant gate insulating film (high-k film), and the semiconductor wafer is irradiated Flashing and heating are performed, thereby performing post-film heat treatment of the high-dielectric constant gate insulating film. In the device disclosed in Patent Document 1, after the heat treatment of the semiconductor wafer is performed in an ammonia gas atmosphere, the chamber is depressurized to discharge harmful ammonia gas and replace it with a nitrogen gas atmosphere, and then the semiconductor wafer is removed. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2017-045982號公報[Patent Document 1] Japanese Patent Laid-Open No. 2017-045982

[發明所欲解決之問題][The problem to be solved by the invention]

然，要對進行閃光燈退火之熱處理裝置定期地或不定期地進行維護。維護時腔室內之空間向外部開放，因此必須預先將氨氣等有害之反應性氣體自腔室內完全地排出。Of course, the heat treatment device for flash lamp annealing should be maintained regularly or irregularly. During maintenance, the space in the chamber is open to the outside, so harmful reactive gases such as ammonia must be completely discharged from the chamber in advance.

然而，存在因於連接在腔室之各種配管設置有質量流量控制器，或配管直徑較細等各種理由，而導致配管之壓力損失較大之情形。尤其是，於供給氨氣等反應性氣體之供給配管之壓力損失較大之情形時，若如專利文獻1所揭示般僅將腔室內進行減壓，則即便腔室內之氨氣能夠排出，亦難以完全地排出殘留於該供給配管之氨氣等。However, there are cases where the pressure loss of the piping is large due to various reasons such as the mass flow controller being installed in the various piping connected to the chamber, or the diameter of the piping is small. In particular, when the pressure loss of the supply piping for supplying reactive gases such as ammonia gas is large, if only the pressure in the chamber is reduced as disclosed in Patent Document 1, even if the ammonia gas in the chamber can be discharged, It is difficult to completely discharge the ammonia gas remaining in the supply pipe.

本發明係鑒於上述問題而完成者，其目的在於：提供一種能夠自供給反應性氣體之供給配管完全地排出反應性氣體並向該供給配管內填充惰性氣體之熱處理裝置及熱處理裝置之氣體環境取代方法。 [解決問題之技術手段]The present invention was made in view of the above problems, and its object is to provide a heat treatment device and a gas atmosphere replacement for the heat treatment device that can completely discharge the reactive gas from the supply pipe for supplying the reactive gas and fill the supply pipe with an inert gas method. [Technical means to solve the problem]

為解決上述問題，技術方案1之發明係一種藉由對基板照射光而加熱該基板之熱處理裝置，其特徵在於具備：腔室，其收容基板；光照射部，其對收容於上述腔室內之上述基板照射光；第1供給配管，其向上述腔室供給反應性氣體；第2供給配管，其向上述腔室供給惰性氣體；排氣配管，其將上述腔室內之氣體環境進行排氣；及壓力計，其設置於上述第1供給配管；且自上述排氣配管進行上述第1供給配管之排氣直至上述壓力計之測定值成為第1氣壓以下為止後，自上述第2供給配管向上述第1供給配管供給惰性氣體直至上述壓力計之測定值成為高於上述第1氣壓之第2氣壓以上為止。In order to solve the above-mentioned problems, the invention of claim 1 is a heat treatment device that heats the substrate by irradiating the substrate with light, which is characterized by comprising: a chamber for accommodating the substrate; The substrate is irradiated with light; a first supply pipe that supplies a reactive gas to the chamber; a second supply pipe that supplies an inert gas to the chamber; an exhaust pipe that exhausts the gas environment in the chamber; And a pressure gauge installed in the first supply pipe; and after exhausting the first supply pipe from the exhaust pipe until the measured value of the pressure gauge becomes below the first air pressure, from the second supply pipe to The first supply pipe supplies an inert gas until the measured value of the pressure gauge becomes at least a second gas pressure higher than the first gas pressure.

又，技術方案2之發明係如技術方案1之發明之熱處理裝置，其特徵在於：於上述第1供給配管進而設置有質量流量控制器。In addition, the invention of claim 2 is the heat treatment apparatus of the invention of claim 1, characterized in that a mass flow controller is further provided in the first supply pipe.

又，技術方案3之發明係如技術方案1或2之發明之熱處理裝置，其特徵在於：上述光照射部包含連續照明燈，於自上述排氣配管進行排氣前，自上述連續照明燈進行光照射而將上述腔室內之氣體環境加熱。In addition, the invention of claim 3 is the heat treatment apparatus of the invention of claim 1 or 2, characterized in that the light irradiating section includes a continuous illuminator, and before exhausting from the exhaust pipe, the continuous illuminator Light irradiation heats the gas environment in the chamber.

又，技術方案4之發明係藉由對基板照射光而加熱該基板之熱處理裝置之氣體環境取代方法，其特徵在於：於收容基板之腔室連接有供給反應性氣體之第1供給配管、供給惰性氣體之第2供給配管、及將上述腔室內之氣體環境進行排氣之排氣配管，於上述第1供給配管設置有壓力計，且上述熱處理裝置之氣體環境取代方法包括：排氣步驟，其係自上述排氣配管進行上述第1供給配管之排氣直至上述壓力計之測定值成為第1氣壓以下為止；及供氣步驟，其係於上述排氣步驟之後，自上述第2供給配管向上述第1供給配管供給惰性氣體直至上述壓力計之測定值成為高於上述第1氣壓之第2氣壓以上為止。In addition, the invention of claim 4 is a method for replacing the gas atmosphere of a heat treatment device that heats the substrate by irradiating light on the substrate, and is characterized in that a first supply pipe for supplying reactive gas is connected to a chamber containing the substrate. The second supply pipe for inert gas and the exhaust pipe for exhausting the gas environment in the chamber. A pressure gauge is installed in the first supply pipe, and the method for replacing the gas environment of the heat treatment device includes: an exhaust step, It is performed from the exhaust pipe to exhaust the first supply pipe until the measured value of the pressure gauge becomes below the first air pressure; and the air supply step is performed from the second supply pipe after the exhaust step The inert gas is supplied to the first supply pipe until the measured value of the pressure gauge becomes equal to or higher than the second air pressure higher than the first air pressure.

又，技術方案5之發明係如技術方案4之發明之熱處理裝置之氣體環境取代方法，其特徵在於：重複執行上述排氣步驟與上述供氣步驟。In addition, the invention of claim 5 is the method for replacing the gas atmosphere of a heat treatment device as the invention of claim 4, which is characterized in that the above-mentioned exhausting step and the above-mentioned gas supplying step are repeatedly performed.

又，技術方案6之發明係如技術方案4或5之發明之熱處理裝置之氣體環境取代方法，其特徵在於：進而具備加熱步驟，該加熱步驟係於上述排氣步驟之前，自連續照明燈進行光照射而將上述腔室內之氣體環境加熱。 [發明之效果]In addition, the invention of claim 6 is the method of replacing the gas environment of the heat treatment device as the invention of claim 4 or 5, and is characterized by further comprising a heating step, which is performed by a continuous illuminator before the exhaust step. Light irradiation heats the gas environment in the chamber. [Effects of Invention]

根據技術方案1至技術方案3之發明，自排氣配管進行第1供給配管之排氣直至設置於第1供給配管之壓力計之測定值成為第1氣壓以下為止後，自第2供給配管向第1供給配管供給惰性氣體直至壓力計之測定值成為高於第1氣壓之第2氣壓以上為止，因此無關於第1供給配管之壓力損失之大小，皆可自第1供給配管完全地排出反應性氣體並向該第1供給配管內填充惰性氣體。According to the invention of claim 1 to claim 3, the first supply pipe is exhausted from the exhaust pipe until the measured value of the pressure gauge installed in the first supply pipe becomes equal to or lower than the first air pressure, and then the second supply pipe The first supply pipe supplies inert gas until the measured value of the pressure gauge becomes more than the second pressure higher than the first pressure. Therefore, regardless of the pressure loss of the first supply pipe, the reaction can be completely discharged from the first supply pipe The first supply pipe is filled with an inert gas.

尤其是，根據技術方案3之發明，於自排氣配管進行排氣前，自連續照明燈進行光照射而將腔室內之氣體環境加熱，因此能夠使氣體環境中之氣體分子之熱運動活化，從而縮短壓力計之測定值成為第1氣壓以下為止所需之排氣時間。In particular, according to the invention of claim 3, before exhausting from the exhaust piping, light is irradiated from the continuous illuminator to heat the gas environment in the chamber, so that the thermal motion of the gas molecules in the gas environment can be activated. This shortens the exhaust time required until the measured value of the pressure gauge becomes below the first air pressure.

根據技術方案4至技術方案6之發明，自排氣配管進行第1供給配管之排氣直至設置於第1供給配管之壓力計之測定值成為第1氣壓以下為止後，自第2供給配管向第1供給配管供給惰性氣體直至壓力計之測定值成為高於第1氣壓之第2氣壓以上為止，因此無關於第1供給配管之壓力損失之大小，皆可自第1供給配管完全地排出反應性氣體並向該第1供給配管內填充惰性氣體。According to the invention of claim 4 to claim 6, after exhausting the first supply pipe from the exhaust pipe until the measured value of the pressure gauge installed in the first supply pipe becomes below the first air pressure, the second supply pipe The first supply pipe supplies inert gas until the measured value of the pressure gauge becomes more than the second pressure higher than the first pressure. Therefore, regardless of the pressure loss of the first supply pipe, the reaction can be completely discharged from the first supply pipe The first supply pipe is filled with an inert gas.

尤其是，根據技術方案6之發明，於排氣步驟之前，自連續照明燈進行光照射而將腔室內之氣體環境加熱，因此能夠使氣體環境中之氣體分子之熱運動活化，從而縮短壓力計之測定值成為第1氣壓以下為止所需之排氣時間。In particular, according to the invention of technical solution 6, before the exhaust step, light is irradiated from the continuous illuminator to heat the gas environment in the chamber, so the thermal motion of the gas molecules in the gas environment can be activated, thereby shortening the pressure gauge The measured value becomes the exhaust time required until the first air pressure is below.

以下，參照圖式並詳細地對本發明之實施形態進行說明。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

圖1係表示本發明之熱處理裝置1之構成之縱剖視圖。圖1之熱處理裝置1係藉由對作為基板之圓板形狀之半導體晶圓W進行閃光照射而加熱該半導體晶圓W之閃光燈退火裝置。成為處理對象之半導體晶圓W之尺寸並無特別限定，例如為

300 mm或

450 mm(本實施形態中為

300 mm)。於搬入至熱處理裝置1前之半導體晶圓W形成有高介電常數膜(high-k膜)作為閘極絕緣膜，藉由利用熱處理裝置1所進行之加熱處理而執行高介電常數膜之成膜後熱處理(PDA：Post Deposition Anneal，沈積後退火)。再者，於圖1及以下各圖中，為容易理解，視需要誇張或簡化地描述各部之尺寸或數量。Fig. 1 is a longitudinal sectional view showing the structure of a heat treatment device 1 of the present invention. The heat treatment device 1 of FIG. 1 is a flash lamp annealing device that heats a semiconductor wafer W of a disc shape as a substrate by flash irradiation. The size of the semiconductor wafer W to be processed is not particularly limited, and is, for example,

300 mm or

450 mm (in this embodiment

300 mm). The semiconductor wafer W before being carried into the heat treatment device 1 is formed with a high-k film as a gate insulating film, and the high-k film is formed by the heat treatment performed by the heat treatment device 1 Heat treatment after film formation (PDA: Post Deposition Anneal, post-deposition annealing). Furthermore, in FIG. 1 and the following figures, for easy understanding, the size or quantity of each part is exaggerated or simplified as needed.

熱處理裝置1具備：腔室6，其收容半導體晶圓W；閃光加熱部5，其內置複數個閃光燈FL；及鹵素加熱部4，其內置複數個鹵素燈HL。於腔室6之上側設置有閃光加熱部5，並且於下側設置有鹵素加熱部4。又，熱處理裝置1於腔室6之內部具備：保持部7，其將半導體晶圓W保持為水平姿勢；及移載機構10，其於保持部7與裝置外部之間進行半導體晶圓W之交接。進而，熱處理裝置1具備控制部3，該控制部3控制設置於鹵素加熱部4、閃光加熱部5及腔室6之各動作機構而使其等執行半導體晶圓W之熱處理。The heat treatment apparatus 1 includes a chamber 6 which houses the semiconductor wafer W; a flash heating section 5 which houses a plurality of flash lamps FL; and a halogen heating section 4 which houses a plurality of halogen lamps HL. A flash heating unit 5 is provided on the upper side of the cavity 6, and a halogen heating unit 4 is provided on the lower side. In addition, the heat treatment device 1 is provided inside the chamber 6: a holding portion 7 that holds the semiconductor wafer W in a horizontal posture; and a transfer mechanism 10 that performs the transfer of the semiconductor wafer W between the holding portion 7 and the outside of the device Handover. Furthermore, the heat treatment apparatus 1 includes a control unit 3 that controls each operating mechanism provided in the halogen heating unit 4, the flash heating unit 5, and the chamber 6 to execute the heat treatment of the semiconductor wafer W.

腔室6係於筒狀之腔室側部61之上下安裝石英製腔室窗而構成。腔室側部61具有上下開口之大致筒形狀，且於上側開口安裝有上側腔室窗63而被封閉，於下側開口安裝有下側腔室窗64而被封閉。構成腔室6之頂壁部之上側腔室窗63係由石英形成之圓板形狀構件，作為使自閃光加熱部5出射之閃光透過至腔室6內之石英窗發揮功能。又，構成腔室6之底部之下側腔室窗64亦為由石英形成之圓板形狀構件，作為使來自鹵素加熱部4之光透過至腔室6內之石英窗發揮功能。The chamber 6 is configured by mounting a quartz chamber window above and below a cylindrical chamber side 61. The chamber side portion 61 has a substantially cylindrical shape with upper and lower openings, and an upper chamber window 63 is attached to the upper opening to be closed, and a lower chamber window 64 is attached to the lower opening to be closed. The upper chamber window 63 on the top wall constituting the chamber 6 is a disc-shaped member formed of quartz, and functions as a quartz window through which the flash light emitted from the flash heating part 5 penetrates into the chamber 6. In addition, the chamber window 64 at the bottom of the chamber 6 is also a circular plate-shaped member formed of quartz, and functions as a quartz window for transmitting the light from the halogen heating unit 4 into the chamber 6.

又，於腔室側部61之內側之壁面之上部安裝有反射環68，於下部安裝有反射環69。反射環68、69皆形成為圓環狀。上側之反射環68係藉由自腔室側部61之上側嵌入而安裝。另一方面，下側之反射環69係藉由自腔室側部61之下側嵌入並利用省略圖示之螺釘固定而安裝。即，反射環68、69皆為裝卸自如地安裝於腔室側部61者。將腔室6之內側空間、即由上側腔室窗63、下側腔室窗64、腔室側部61及反射環68、69所包圍之空間規定為熱處理空間65。In addition, a reflection ring 68 is attached to the upper part of the inner wall surface of the chamber side part 61, and a reflection ring 69 is attached to the lower part. Both the reflection rings 68 and 69 are formed in an annular shape. The reflection ring 68 on the upper side is installed by being embedded from the upper side of the chamber side 61. On the other hand, the reflection ring 69 on the lower side is installed by being inserted from the lower side of the chamber side portion 61 and fixed with a screw (not shown). In other words, the reflection rings 68 and 69 are all detachably attached to the chamber side 61. The space inside the chamber 6, that is, the space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side 61, and the reflection rings 68 and 69 is defined as the heat treatment space 65.

藉由於腔室側部61安裝反射環68、69，而於腔室6之內壁面形成凹部62。即，形成由腔室側部61之內壁面中之未安裝有反射環68、69之中央部分、反射環68之下端面、及反射環69之上端面圍成之凹部62。凹部62於腔室6之內壁面沿著水平方向形成為圓環狀，圍繞保持半導體晶圓W之保持部7。腔室側部61及反射環68、69係由強度與耐熱性優異之金屬材料(例如不鏽鋼)形成。By installing the reflection rings 68 and 69 on the side 61 of the cavity, a recess 62 is formed on the inner wall surface of the cavity 6. That is, a recess 62 surrounded by the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not mounted, the lower end surface of the reflection ring 68, and the upper end surface of the reflection ring 69 are formed. The recess 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the chamber 6 and surrounds the holding part 7 holding the semiconductor wafer W. The chamber side 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) excellent in strength and heat resistance.

又，於腔室側部61形成有用以相對於腔室6進行半導體晶圓W之搬入及搬出之搬送開口部(爐口)66。搬送開口部66可藉由閘閥185而打開及關閉。搬送開口部66連通連接於凹部62之外周面。因此，於閘閥185將搬送開口部66打開時，能夠自搬送開口部66通過凹部62向熱處理空間65搬入半導體晶圓W及自熱處理空間65搬出半導體晶圓W。又，當閘閥185將搬送開口部66封閉時，腔室6內之熱處理空間65成為密閉空間。In addition, a transfer opening (furnace opening) 66 for carrying in and out of the semiconductor wafer W with respect to the chamber 6 is formed in the chamber side portion 61. The conveyance opening 66 can be opened and closed by the gate valve 185. The conveyance opening 66 is connected to the outer peripheral surface of the recess 62 in communication. Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W can be transported into the heat treatment space 65 from the transfer opening 66 through the recess 62 and the semiconductor wafer W can be transported out of the heat treatment space 65. Moreover, when the gate valve 185 closes the conveyance opening 66, the heat treatment space 65 in the chamber 6 becomes a closed space.

進而，於腔室側部61，貫穿設置有貫通孔61a。於腔室側部61之外壁面之設置有貫通孔61a之部位安裝有輻射溫度計20。貫通孔61a係用以將自保持於下述基座74之半導體晶圓W之下表面輻射之紅外光引導至輻射溫度計20的圓筒狀之孔。貫通孔61a以其貫通方向之軸與保持於基座74之半導體晶圓W之主面相交之方式，相對於水平方向傾斜地設置。於貫通孔61a之面向熱處理空間65側之端部，安裝有透明窗21，該透明窗21係使輻射溫度計20所能測定之波長區域之紅外光透過且包含氟化鋇材料。Furthermore, a through hole 61a is penetrated in the chamber side part 61. As shown in FIG. A radiation thermometer 20 is installed at a portion on the outer wall surface of the chamber side 61 where the through hole 61a is provided. The through hole 61a is a cylindrical hole for guiding the infrared light radiated from the lower surface of the semiconductor wafer W held on the susceptor 74 described below to the radiation thermometer 20. The through hole 61a is provided obliquely with respect to the horizontal direction such that the axis of the penetrating direction intersects the main surface of the semiconductor wafer W held by the susceptor 74. At the end of the through hole 61a facing the heat treatment space 65, a transparent window 21 is installed. The transparent window 21 transmits infrared light in the wavelength range that can be measured by the radiation thermometer 20 and contains a barium fluoride material.

又，於腔室6之內壁上部形成有向熱處理空間65供給處理氣體(本實施形態中為氮氣(N₂ )及/或氨氣(NH₃ ))之氣體供給孔81。氣體供給孔81形成於較凹部62更靠上側位置，亦可設置於反射環68。氣體供給孔81係經由呈圓環狀形成於腔室6之側壁內部之緩衝空間82而連通連接於氣體供給管83。氣體供給管83分支成兩股，作為其中之一之反應性氣體配管(第1供給配管)83a連接於氨氣供給源91，另一惰性氣體配管(第2供給配管)83b連接於氮氣供給源92。氨氣供給源91於控制部3之控制下將氨氣饋送至反應性氣體配管83a。氮氣供給源92於控制部3之控制下將氮氣饋送至惰性氣體配管83b。In addition, a gas supply hole 81 _{for supplying processing gas (nitrogen (N 2} ) and/or ammonia (NH ₃ ) in this embodiment) to the heat treatment space 65 is formed in the upper part of the inner wall of the chamber 6. The gas supply hole 81 is formed at a position higher than the concave portion 62 and may be provided in the reflection ring 68. The gas supply hole 81 is connected to the gas supply pipe 83 through a buffer space 82 formed in the side wall of the chamber 6 in an annular shape. The gas supply pipe 83 is branched into two. One of the reactive gas pipes (first supply pipe) 83a is connected to the ammonia supply source 91, and the other inert gas pipe (second supply pipe) 83b is connected to the nitrogen supply source 92. The ammonia gas supply source 91 feeds the ammonia gas to the reactive gas pipe 83a under the control of the control unit 3. The nitrogen supply source 92 feeds nitrogen to the inert gas pipe 83b under the control of the control unit 3.

於反應性氣體配管83a之路徑中途介插有供給源閥93、供給確認壓力計94、質量流量控制器95及供給閥96。當打開供給源閥93及供給閥96時，氨氣自氨氣供給源91經過反應性氣體配管83a及氣體供給管83饋送至緩衝空間82。供給確認壓力計94判定氨氣是否於預定之壓力下自氨氣供給源91被供給至反應性氣體配管83a。質量流量控制器95將流經反應性氣體配管83a之氨氣之流量調整為預定之設定值。A supply source valve 93, a supply confirmation pressure gauge 94, a mass flow controller 95, and a supply valve 96 are inserted in the middle of the path of the reactive gas pipe 83a. When the supply source valve 93 and the supply valve 96 are opened, the ammonia gas is fed from the ammonia gas supply source 91 to the buffer space 82 through the reactive gas pipe 83 a and the gas supply pipe 83. The supply confirmation pressure gauge 94 determines whether or not the ammonia gas is supplied from the ammonia gas supply source 91 to the reactive gas pipe 83a under a predetermined pressure. The mass flow controller 95 adjusts the flow rate of the ammonia gas flowing through the reactive gas pipe 83a to a predetermined set value.

另一方面，於惰性氣體配管83b之路徑中途介插有質量流量控制器97及供給閥98。當打開供給閥98時，氮氣自氮氣供給源92經過惰性氣體配管83b及氣體供給管83被饋送至緩衝空間82。質量流量控制器97將流經惰性氣體配管83b之氮氣之流量調整為預定之設定值。當供給源閥93、供給閥96及供給閥98全部被打開時，自反應性氣體配管83a饋送之氨氣與自惰性氣體配管83b饋送之氮氣於氣體供給管83合流後氨氣與氮氣之混合氣體被饋送至緩衝空間82。On the other hand, a mass flow controller 97 and a supply valve 98 are inserted in the middle of the path of the inert gas pipe 83b. When the supply valve 98 is opened, nitrogen gas is fed from the nitrogen gas supply source 92 to the buffer space 82 through the inert gas pipe 83 b and the gas supply pipe 83. The mass flow controller 97 adjusts the flow rate of nitrogen gas flowing through the inert gas pipe 83b to a predetermined set value. When the supply valve 93, the supply valve 96, and the supply valve 98 are all opened, the ammonia gas fed from the reactive gas pipe 83a and the nitrogen gas fed from the inert gas pipe 83b are combined in the gas supply pipe 83 to mix the ammonia and nitrogen The gas is fed to the buffer space 82.

又，設置有將反應性氣體配管83a與惰性氣體配管83b連通連接之旁路配管84。旁路配管84將反應性氣體配管83a之供給源閥93與供給確認壓力計94之間之部位連通連接，且將惰性氣體配管83b之氮氣供給源92與質量流量控制器97之間之部位連通連接。於旁路配管84，介插有旁路閥85。當打開旁路閥85時，反應性氣體配管83a與惰性氣體配管83b成為連通狀態。In addition, a bypass pipe 84 that communicates and connects the reactive gas pipe 83a and the inert gas pipe 83b is provided. The bypass piping 84 connects the part between the supply source valve 93 of the reactive gas piping 83a and the supply confirmation pressure gauge 94, and connects the part between the nitrogen supply source 92 of the inert gas piping 83b and the mass flow controller 97 connect. A bypass valve 85 is inserted into the bypass pipe 84. When the bypass valve 85 is opened, the reactive gas pipe 83a and the inert gas pipe 83b are in a communicating state.

自氣體供給管83饋送並流入至緩衝空間82之處理氣體以於流體阻力較氣體供給孔81小之緩衝空間82內擴散之方式流動而充滿緩衝空間82。繼而，充滿緩衝空間82之處理氣體自氣體供給孔81被饋送至熱處理空間65內。The processing gas fed from the gas supply pipe 83 and flowing into the buffer space 82 flows to fill the buffer space 82 by spreading in the buffer space 82 whose fluid resistance is smaller than that of the gas supply hole 81. Then, the processing gas filled with the buffer space 82 is fed into the thermal processing space 65 from the gas supply hole 81.

於腔室6之內壁下部形成有將熱處理空間65內之氣體進行排氣之氣體排氣孔86。氣體排氣孔86形成於較凹部62更靠下側位置，亦可設置於反射環69。氣體排氣孔86經由呈圓環狀形成於腔室6之側壁內部之緩衝空間87而連通連接於氣體排氣管88。氣體排氣管88連接於排氣部190。又，於氣體排氣管88之路徑中途介插有排氣閥89及真空壓力計191。當打開排氣閥89時，熱處理空間65之氣體自氣體排氣孔86經過緩衝空間87向氣體排氣管88排出。真空壓力計191直接測定氣體排氣管88之壓力。氣體排氣管88之設置有真空壓力計191之部位之壓力因與腔室6內之壓力大致相同，故利用真空壓力計191所測定出之壓力亦為腔室6內之壓力。再者，氣體供給孔81及氣體排氣孔86可沿著腔室6之圓周方向設置有複數個，亦可為狹縫狀者。A gas exhaust hole 86 for exhausting the gas in the heat treatment space 65 is formed at the lower part of the inner wall of the chamber 6. The gas exhaust hole 86 is formed at a lower position than the recess 62 and may also be provided in the reflection ring 69. The gas exhaust hole 86 is connected to the gas exhaust pipe 88 through a buffer space 87 formed in the side wall of the chamber 6 in an annular shape. The gas exhaust pipe 88 is connected to the exhaust part 190. In addition, an exhaust valve 89 and a vacuum pressure gauge 191 are inserted in the middle of the path of the gas exhaust pipe 88. When the exhaust valve 89 is opened, the gas in the heat treatment space 65 is exhausted from the gas exhaust hole 86 through the buffer space 87 to the gas exhaust pipe 88. The vacuum pressure gauge 191 directly measures the pressure of the gas exhaust pipe 88. Since the pressure at the part of the gas exhaust pipe 88 where the vacuum pressure gauge 191 is installed is approximately the same as the pressure in the chamber 6, the pressure measured by the vacuum pressure gauge 191 is also the pressure in the chamber 6. Furthermore, the gas supply holes 81 and the gas exhaust holes 86 may be provided in plural along the circumferential direction of the chamber 6, or they may be slit-shaped.

作為排氣部190，可使用真空泵或設置有熱處理裝置1之工廠之排氣設備。當採用真空泵作為排氣部190，不自氣體供給孔81進行任何氣體供給地將作為密閉空間之熱處理空間65之氣體環境進行排氣時，能夠將腔室6內減壓至真空氣體環境為止。又，即便於未使用真空泵作為排氣部190之情形時，藉由自氣體供給孔81進行排氣而非進行氣體供給，亦能將腔室6內減壓為未達大氣壓之氣壓。經減壓之腔室6內之壓力係利用真空壓力計191測定。As the exhaust unit 190, a vacuum pump or exhaust equipment of a factory provided with the heat treatment device 1 can be used. When a vacuum pump is used as the exhaust unit 190 to exhaust the gas environment of the heat treatment space 65 as a closed space without any gas supply from the gas supply hole 81, the pressure in the chamber 6 can be reduced to a vacuum gas environment. Moreover, even when a vacuum pump is not used as the exhaust part 190, by exhausting from the gas supply hole 81 instead of supplying gas, the pressure in the chamber 6 can be reduced to a pressure lower than the atmospheric pressure. The pressure in the decompressed chamber 6 is measured with a vacuum pressure gauge 191.

圖2係表示保持部7之整體外觀之立體圖。保持部7具備基台環71、連結部72及基座74而構成。基台環71、連結部72及基座74皆由石英形成。即，保持部7之整體由石英形成。FIG. 2 is a perspective view showing the overall appearance of the holding portion 7. The holding portion 7 includes a base ring 71, a connecting portion 72, and a base 74. The base ring 71, the connecting portion 72, and the base 74 are all formed of quartz. That is, the entire holding portion 7 is formed of quartz.

基台環71係自圓環形狀缺損一部分之圓弧形狀之石英構件。該缺損部分係為了防止下述移載機構10之移載臂11與基台環71之干涉而設置。基台環71係藉由載置於凹部62之底面，而支持於腔室6之壁面(參照圖1)。於基台環71之上表面，沿著其圓環形狀之圓周方向豎立設置有複數個連結部72(本實施形態中為4個)。連結部72亦為石英構件，藉由焊接而固著於基台環71。The abutment ring 71 is a circular arc-shaped quartz member that is partly missing from the circular ring shape. The missing part is provided to prevent interference between the transfer arm 11 of the transfer mechanism 10 and the abutment ring 71 described below. The abutment ring 71 is supported on the wall surface of the chamber 6 by being placed on the bottom surface of the recess 62 (refer to FIG. 1). On the upper surface of the abutment ring 71, a plurality of connecting portions 72 (four in this embodiment) are erected along the circumferential direction of the ring shape. The connecting portion 72 is also a quartz member, and is fixed to the abutment ring 71 by welding.

基座74由設置於基台環71之4個連結部72支持。圖3係基座74之俯視圖。又，圖4係基座74之剖視圖。基座74具備保持板75、導環76及複數個基板支持銷77。保持板75係由石英形成之大致圓形之平板狀構件。保持板75之直徑大於半導體晶圓W之直徑。即，保持板75具有較半導體晶圓W大之平面尺寸。The base 74 is supported by four connecting parts 72 provided on the abutment ring 71. FIG. 3 is a top view of the base 74. As shown in FIG. 4 is a cross-sectional view of the base 74. The base 74 includes a holding plate 75, a guide ring 76, and a plurality of substrate support pins 77. The holding plate 75 is a substantially circular plate-shaped member formed of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a larger plane size than the semiconductor wafer W.

於保持板75之上表面周緣部設置有導環76。導環76為具有較半導體晶圓W之直徑大之內徑之圓環形狀之構件。例如，於半導體晶圓W之直徑為

300 mm之情形時，導環76之內徑為

320 mm。導環76之內周形成為自保持板75朝向上方擴大之傾斜面。導環76由與保持板75相同之石英形成。導環76可焊接於保持板75之上表面，亦可藉由另行加工之銷等而固定於保持板75。或，亦可將保持板75與導環76加工為一體之構件。A guide ring 76 is provided on the peripheral edge of the upper surface of the holding plate 75. The guide ring 76 is a ring-shaped member having an inner diameter larger than the diameter of the semiconductor wafer W. For example, the diameter of the semiconductor wafer W is

In the case of 300 mm, the inner diameter of the guide ring 76 is

320 mm. The inner circumference of the guide ring 76 is formed as an inclined surface that expands upward from the holding plate 75. The guide ring 76 is formed of the same quartz as the holding plate 75. The guide ring 76 may be welded to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 by a separately processed pin or the like. Or, the holding plate 75 and the guide ring 76 may be processed as an integral member.

將保持板75之上表面中之較導環76更靠內側之區域設為保持半導體晶圓W之平面狀之保持面75a。於保持板75之保持面75a豎立設置有複數個基板支持銷77。於本實施形態中，沿著與保持面75a之外周圓(導環76之內周圓)同心圓之圓周上每30°豎立設置總計12個基板支持銷77。配置12個基板支持銷77之圓之直徑(對向之基板支持銷77間之距離)小於半導體晶圓W之直徑，若半導體晶圓W之直徑為

300 mm則該圓之直徑為

270 mm～

280 mm(本實施形態中為

270 mm)。各基板支持銷77由石英形成。複數個基板支持銷77可藉由焊接設置於保持板75之上表面，亦可與保持板75加工為一體。The region on the upper surface of the holding plate 75 that is more inside than the guide ring 76 is a planar holding surface 75a that holds the semiconductor wafer W. A plurality of substrate support pins 77 are erected on the holding surface 75 a of the holding plate 75. In this embodiment, a total of 12 substrate support pins 77 are erected every 30° along the circumference of the outer circumference of the holding surface 75a (the inner circumference of the guide ring 76). The diameter of the circle with 12 substrate support pins 77 (the distance between the opposite substrate support pins 77) is smaller than the diameter of the semiconductor wafer W, if the diameter of the semiconductor wafer W is

300 mm, the diameter of the circle is

270 mm～

280 mm (in this embodiment

270 mm). Each substrate support pin 77 is formed of quartz. The plurality of substrate support pins 77 can be arranged on the upper surface of the holding plate 75 by welding, or can be processed as a whole with the holding plate 75.

回到圖2，豎立設置於基台環71之4個連結部72與基座74之保持板75之周緣部藉由焊接而固著。即，基座74與基台環71藉由連結部72而固定地連結。藉由使此種保持部7之基台環71支持於腔室6之壁面，而將保持部7安裝於腔室6。於保持部7安裝在腔室6之狀態下，基座74之保持板75成為水平姿勢(法線與鉛直方向一致之姿勢)。即，保持板75之保持面75a成為水平面。Returning to FIG. 2, the four connecting portions 72 erected on the abutment ring 71 and the peripheral edge portions of the holding plate 75 of the base 74 are fixed by welding. That is, the base 74 and the abutment ring 71 are fixedly connected by the connecting portion 72. By supporting the abutment ring 71 of the holding part 7 on the wall surface of the chamber 6, the holding part 7 is attached to the chamber 6. In the state where the holding portion 7 is installed in the cavity 6, the holding plate 75 of the base 74 is in a horizontal posture (posture in which the normal line coincides with the vertical direction). That is, the holding surface 75a of the holding plate 75 becomes a horizontal surface.

被搬入至腔室6之半導體晶圓W係以水平姿勢載置並保持於安裝在腔室6之保持部7之基座74之上。此時，半導體晶圓W由豎立設置於保持板75上之12個基板支持銷77支持而保持於基座74。更嚴格而言，12個基板支持銷77之上端部接觸半導體晶圓W之下表面而支持該半導體晶圓W。因12個基板支持銷77之高度(自基板支持銷77之上端至保持板75之保持面75a之距離)均一，故能夠藉由12個基板支持銷77將半導體晶圓W支持為水平姿勢。The semiconductor wafer W carried into the chamber 6 is placed in a horizontal position and held on the susceptor 74 mounted on the holding portion 7 of the chamber 6. At this time, the semiconductor wafer W is supported by the 12 substrate support pins 77 erected on the holding plate 75 and held on the base 74. More strictly speaking, the upper ends of the 12 substrate support pins 77 contact the lower surface of the semiconductor wafer W to support the semiconductor wafer W. Since the height of the 12 substrate support pins 77 (the distance from the upper end of the substrate support pins 77 to the holding surface 75a of the holding plate 75) is uniform, the semiconductor wafer W can be supported in a horizontal posture by the 12 substrate support pins 77.

又，半導體晶圓W由複數個基板支持銷77與保持板75之保持面75a隔開特定間隔地予以支持。導環76之厚度大於基板支持銷77之高度。因此，可利用導環76防止由複數個基板支持銷77所支持之半導體晶圓W之水平方向之位置偏移。In addition, the semiconductor wafer W is supported by a plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75 at a predetermined interval. The thickness of the guide ring 76 is greater than the height of the substrate support pin 77. Therefore, the guide ring 76 can be used to prevent the positional deviation of the semiconductor wafer W supported by the plurality of substrate supporting pins 77 in the horizontal direction.

又，如圖2及圖3所示，於基座74之保持板75，上下貫通地形成有開口部78。開口部78係為了供輻射溫度計20接收自半導體晶圓W之下表面輻射之輻射光(紅外光)而設置。即，輻射溫度計20經由開口部78及安裝於腔室側部61之貫通孔61a之透明窗21接收自半導體晶圓W之下表面輻射之光並測定該半導體晶圓W之溫度。進而，於基座74之保持板75，貫穿設置有4個貫通孔79，該等貫通孔79供下述移載機構10之頂起銷12貫通，以便進行半導體晶圓W之交接。In addition, as shown in FIGS. 2 and 3, the holding plate 75 of the base 74 has an opening 78 penetrating vertically and vertically. The opening 78 is provided for the radiation thermometer 20 to receive the radiation light (infrared light) radiated from the lower surface of the semiconductor wafer W. That is, the radiation thermometer 20 receives the light radiated from the lower surface of the semiconductor wafer W through the opening 78 and the transparent window 21 installed in the through hole 61a of the chamber side 61 and measures the temperature of the semiconductor wafer W. Furthermore, the holding plate 75 of the susceptor 74 is provided with four through-holes 79 penetrating through the through-holes 79 for passing through the jacking pins 12 of the transfer mechanism 10 described below, so that the semiconductor wafer W can be transferred.

圖5係移載機構10之俯視圖。又，圖6係移載機構10之側視圖。移載機構10具備2根移載臂11。移載臂11形成為如沿著大致圓環狀之凹部62之圓弧形狀。於各個移載臂11豎立設置有2根頂起銷12。移載臂11及頂起銷12由石英形成。各移載臂11可藉由水平移動機構13而旋動。水平移動機構13使一對移載臂11於相對於保持部7進行半導體晶圓W之移載之移載動作位置(圖5之實線位置)和俯視時不與保持於保持部7之半導體晶圓W重疊之退避位置(圖5之二點鏈線位置)之間水平移動。作為水平移動機構13，可為藉由個別之馬達使各移載臂11分別旋動者，亦可為使用連桿機構並藉由1個馬達使一對移載臂11連動地旋動者。FIG. 5 is a top view of the transfer mechanism 10. In addition, FIG. 6 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arm 11 is formed in a circular arc shape along a substantially circular recess 62. Two jacking pins 12 are erected on each transfer arm 11. The transfer arm 11 and the jacking pin 12 are formed of quartz. Each transfer arm 11 can be rotated by the horizontal movement mechanism 13. The horizontal movement mechanism 13 moves the pair of transfer arms 11 to the transfer operation position (the position of the solid line in FIG. 5) for transferring the semiconductor wafer W with respect to the holding portion 7 and the semiconductor wafer held in the holding portion 7 in a plan view. The wafer W is moved horizontally between the overlapping retreat positions (the two-dot chain line position in FIG. 5). The horizontal movement mechanism 13 may be one that rotates each transfer arm 11 by a separate motor, or one that uses a link mechanism and rotates the pair of transfer arms 11 in conjunction with one motor.

又，一對移載臂11係藉由升降機構14而與水平移動機構13一同升降移動。當升降機構14使一對移載臂11於移載動作位置上升時，總計4根頂起銷12通過貫穿設置於基座74之貫通孔79(參照圖2、3)，頂起銷12之上端自基座74之上表面突出。另一方面，當升降機構14使一對移載臂11於移載動作位置下降而將頂起銷12自貫通孔79拔出，且水平移動機構13使一對移載臂11以打開之方式移動時，各移載臂11移動至退避位置。一對移載臂11之退避位置為保持部7之基台環71之正上方。因基台環71載置於凹部62之底面，故移載臂11之退避位置成為凹部62之內側。再者，於移載機構10之驅動部(水平移動機構13及升降機構14)所被設置之部位之附近亦設置有省略圖示之排氣機構，該排氣機構以將移載機構10之驅動部周邊之氣體環境排出至腔室6之外部之方式構成。In addition, the pair of transfer arms 11 are moved up and down together with the horizontal movement mechanism 13 by the lifting mechanism 14. When the lifting mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of four jacking pins 12 pass through the through holes 79 (refer to FIGS. 2 and 3) provided in the base 74, and the jacking pins 12 The upper end protrudes from the upper surface of the base 74. On the other hand, when the lifting mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position, the jacking pin 12 is pulled out from the through hole 79, and the horizontal movement mechanism 13 opens the pair of transfer arms 11 When moving, each transfer arm 11 moves to the retracted position. The retreat position of the pair of transfer arms 11 is directly above the abutment ring 71 of the holding portion 7. Since the abutment ring 71 is placed on the bottom surface of the recess 62, the retracted position of the transfer arm 11 is inside the recess 62. Furthermore, an exhaust mechanism (not shown) is also installed near the location where the driving part (horizontal movement mechanism 13 and lifting mechanism 14) of the transfer mechanism 10 is installed. The gas environment around the driving part is discharged to the outside of the chamber 6.

回到圖1，設置於腔室6之上方之閃光加熱部5係於殼體51之內側具備包含複數根(本實施形態中為30根)氙氣閃光燈FL之光源、及以覆蓋該光源之上方之方式設置之反射器52而構成。又，於閃光加熱部5之殼體51之底部安裝有燈光輻射窗53。構成閃光加熱部5之底部之燈光輻射窗53係由石英形成之板狀之石英窗。藉由將閃光加熱部5設置於腔室6之上方，而使燈光輻射窗53與上側腔室窗63相對向。閃光燈FL係自腔室6之上方經由燈光輻射窗53及上側腔室窗63對熱處理空間65照射閃光。Returning to FIG. 1, the flash heating part 5 provided above the chamber 6 is provided with a light source including a plurality of (30 in this embodiment) xenon flash lamps FL on the inside of the housing 51, and covers the top of the light source The reflector 52 is installed in the same manner. In addition, a light radiation window 53 is installed at the bottom of the housing 51 of the flash heating part 5. The lamp radiation window 53 constituting the bottom of the flash heating part 5 is a plate-shaped quartz window formed of quartz. By arranging the flash heating part 5 above the cavity 6, the light radiation window 53 and the upper cavity window 63 are opposed to each other. The flash lamp FL irradiates the heat treatment space 65 with flash from above the chamber 6 through the lamp radiation window 53 and the upper chamber window 63.

複數個閃光燈FL分別為具有長條圓筒形狀之棒狀燈，並以各自之長度方向沿著保持於保持部7之半導體晶圓W之主面(即沿著水平方向)相互平行之方式排列成平面狀。因此，藉由閃光燈FL之排列而形成之平面亦為水平面。複數個閃光燈FL所排列之區域較半導體晶圓W之平面尺寸大。The plurality of flash lamps FL are rod-shaped lamps having a long cylindrical shape, and are arranged in such a manner that their length directions are parallel to each other along the main surface of the semiconductor wafer W held by the holding portion 7 (ie, along the horizontal direction) Into a plane. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane. The area where the plurality of flash lamps FL are arranged is larger than the planar size of the semiconductor wafer W.

氙氣閃光燈FL具備：棒狀之玻璃管(放電管)，其於內部封入有氙氣且於其兩端部配設有連接於電容器之陽極及陰極；及觸發電極，其附設於該玻璃管之外周面上。氙氣係電性絕緣體，故即便於電容器蓄積有電荷，於通常狀態下電亦不會流動至玻璃管內。然而，於對觸發電極施加高電壓而破壞絕緣之情形時，電容器中所儲存之電瞬間流動至玻璃管內，藉由此時之氙之原子或分子之激發而發出光。此種氙氣閃光燈FL具有如下特徵：因預先儲存於電容器之靜電能量被轉換為0.1毫秒至100毫秒之極短之光脈衝，故與如鹵素燈HL般連續照明之光源相比，能夠照射極強之光。即，閃光燈FL係於未達1秒之極短時間內瞬間發光之脈衝發光燈。再者，閃光燈FL之發光時間可根據對閃光燈FL進行電力供給之燈電源之線圈常數進行調整。The xenon flash lamp FL is equipped with: a rod-shaped glass tube (discharge tube), which contains xenon gas inside and is equipped with an anode and a cathode connected to a capacitor at both ends; and a trigger electrode, which is attached to the outer circumference of the glass tube Surface. The xenon gas is an electrical insulator, so even if charge is stored in the capacitor, the electricity will not flow into the glass tube under normal conditions. However, when a high voltage is applied to the trigger electrode to break the insulation, the electricity stored in the capacitor instantly flows into the glass tube, and light is emitted by the excitation of xenon atoms or molecules at this time. This type of xenon flash lamp FL has the following characteristics: because the electrostatic energy stored in the capacitor in advance is converted into an extremely short light pulse of 0.1 millisecond to 100 milliseconds, it can illuminate extremely strongly compared with a light source that continuously illuminates like a halogen lamp HL Light. That is, the flash lamp FL is a pulsed light that emits instantaneously in a very short time of less than 1 second. Furthermore, the light-emitting time of the flash lamp FL can be adjusted according to the coil constant of the lamp power supply for power supply to the flash lamp FL.

又，反射器52係以於複數個閃光燈FL之上方覆蓋其等整體之方式設置。反射器52之基本功能係將自複數個閃光燈FL出射之閃光向熱處理空間65側反射。反射器52由鋁合金板形成，其表面(面向閃光燈FL側之面)藉由噴砂處理而實施了表面粗化加工。In addition, the reflector 52 is arranged to cover the whole of the plurality of flash lamps FL. The basic function of the reflector 52 is to reflect the flashes emitted from the plurality of flash lamps FL to the heat treatment space 65 side. The reflector 52 is formed of an aluminum alloy plate, and the surface (the surface facing the flash FL side) has been roughened by sandblasting.

設置於腔室6之下方之鹵素加熱部4於殼體41之內側內置有複數根(本實施形態中為40根)鹵素燈HL。鹵素加熱部4係如下之光照射部，即，藉由複數個鹵素燈HL而自腔室6之下方經由下側腔室窗64向熱處理空間65進行光照射，從而加熱半導體晶圓W。The halogen heating part 4 provided below the cavity 6 has a plurality of (40 in this embodiment) halogen lamps HL built in the inside of the housing 41. The halogen heating unit 4 is a light irradiation unit that irradiates light from below the chamber 6 to the heat treatment space 65 through the lower chamber window 64 by a plurality of halogen lamps HL, thereby heating the semiconductor wafer W.

圖7係表示複數個鹵素燈HL之配置之俯視圖。40根鹵素燈HL分為上下2段而配置。於靠近保持部7之上段配設有20根鹵素燈HL，並且於較上段遠離保持部7之下段亦配設有20根鹵素燈HL。各鹵素燈HL係具有長條圓筒形狀之棒狀燈。上段、下段皆為20根鹵素燈HL以各自之長度方向沿著保持於保持部7之半導體晶圓W之主面(即沿著水平方向)相互平行之方式排列。因此，上段、下段皆為藉由鹵素燈HL之排列而形成之平面為水平面。Fig. 7 is a plan view showing the arrangement of a plurality of halogen lamps HL. The 40 halogen lamps HL are arranged in two upper and lower stages. Twenty halogen lamps HL are arranged on the upper section close to the holding portion 7, and 20 halogen lamps HL are arranged on the lower section far from the holding portion 7 on the upper section. Each halogen lamp HL is a rod-shaped lamp with a long cylindrical shape. The upper stage and the lower stage are both 20 halogen lamps HL arranged in such a manner that their length directions are parallel to each other along the main surface of the semiconductor wafer W held by the holding portion 7 (ie, along the horizontal direction). Therefore, the upper section and the lower section are both horizontal planes formed by the arrangement of the halogen lamps HL.

又，如圖7所示，上段、下段皆為：相較與保持於保持部7之半導體晶圓W之中央部對向之區域，與周緣部對向之區域中之鹵素燈HL之配設密度更高。即，上下段皆為：相較燈管排列之中央部，周緣部之鹵素燈HL之配設間距更短。因此，能夠對在利用來自鹵素加熱部4之光照射之加熱時易產生溫度降低之半導體晶圓W之周緣部進行更多光量之照射。Also, as shown in FIG. 7, both the upper and lower stages are: the arrangement of the halogen lamp HL in the area opposite to the peripheral portion of the semiconductor wafer W held in the holding portion 7 compared to the area opposite to the center portion of the semiconductor wafer W The density is higher. That is, the upper and lower sections are both: the arrangement pitch of the halogen lamps HL at the peripheral part is shorter than that of the central part of the lamp tube arrangement. Therefore, it is possible to irradiate a larger amount of light to the peripheral portion of the semiconductor wafer W that is likely to cause a temperature drop during heating by light irradiation from the halogen heating portion 4.

又，由上段之鹵素燈HL所構成之燈群與由下段之鹵素燈HL所構成之燈群以呈格子狀交叉之方式排列。即，以配置於上段之20根鹵素燈HL之長度方向與配置於下段之20根鹵素燈HL之長度方向相互正交之方式配設有總計40根鹵素燈HL。In addition, the lamp group formed by the halogen lamp HL of the upper stage and the lamp group formed by the halogen lamp HL of the lower stage are arranged in a grid-like cross. That is, a total of 40 halogen lamps HL are arranged such that the longitudinal direction of the 20 halogen lamps HL arranged in the upper stage and the longitudinal direction of the 20 halogen lamps HL arranged in the lower stage are orthogonal to each other.

鹵素燈HL係藉由對配設於玻璃管內部之燈絲通電而使燈絲白熾化並發光之燈絲方式之光源。於玻璃管之內部封入有對氮氣或氬氣等惰性氣體導入微量鹵素元素(碘、溴等)而得之氣體。藉由導入鹵素元素，能夠抑制燈絲之折損並將燈絲之溫度設定為高溫。因此，鹵素燈HL具有如下特性：與通常之白熾燈泡相比，壽命長且能夠連續地照射較強之光。即，鹵素燈HL係連續發光至少1秒以上之連續照明燈。又，鹵素燈HL為棒狀燈，故壽命較長，藉由使鹵素燈HL沿著水平方向配置而使得對上方之半導體晶圓W之輻射效率優異。The halogen lamp HL is a filament light source in which the filament is incandescent and emits light by energizing the filament arranged inside the glass tube. The inside of the glass tube is sealed with a gas obtained by introducing a trace amount of halogen elements (iodine, bromine, etc.) into an inert gas such as nitrogen or argon. By introducing halogen elements, the breakage of the filament can be suppressed and the temperature of the filament can be set to a high temperature. Therefore, the halogen lamp HL has the following characteristics: Compared with ordinary incandescent bulbs, it has a longer life and can continuously irradiate stronger light. That is, the halogen lamp HL is a continuous lighting lamp that continuously emits light for at least 1 second. In addition, the halogen lamp HL is a rod-shaped lamp, so it has a long life. By arranging the halogen lamp HL in the horizontal direction, the radiation efficiency to the upper semiconductor wafer W is excellent.

又，於鹵素加熱部4之殼體41內，亦於2段之鹵素燈HL之下側設置有反射器43(圖1)。反射器43將自複數個鹵素燈HL出射之光向熱處理空間65側反射。In addition, in the housing 41 of the halogen heating part 4, a reflector 43 is also provided under the two-stage halogen lamp HL (FIG. 1). The reflector 43 reflects the light emitted from the plurality of halogen lamps HL to the heat treatment space 65 side.

控制部3控制設置於熱處理裝置1之上述各種動作機構。作為控制部3之硬體之構成與一般之電腦相同。即，控制部3具備：CPU(Central Processing Unit，中央處理單元)，其係進行各種運算處理之電路；ROM(Read Only Memory，唯讀記憶體)，其係記憶基本程式之唯讀記憶體；RAM(Random Access Memory，隨機存取記憶體)，其係記憶各種資訊之讀寫自如之記憶體；及磁碟，其預先記憶控制用軟體或資料等。藉由控制部3之CPU執行特定之處理程式而進行熱處理裝置1中之處理。The control unit 3 controls the above-mentioned various operating mechanisms provided in the heat treatment apparatus 1. The configuration of the hardware as the control unit 3 is the same as that of a general computer. That is, the control unit 3 is equipped with: a CPU (Central Processing Unit), which is a circuit for performing various arithmetic processing; ROM (Read Only Memory), which is a read-only memory for storing basic programs; RAM (Random Access Memory, random access memory), which is a memory that can be read and written freely for storing various information; and a magnetic disk, which stores control software or data in advance. The processing in the heat treatment device 1 is performed by the CPU of the control unit 3 executing a specific processing program.

除上述構成以外，為了防止於半導體晶圓W之熱處理時因自鹵素燈HL及閃光燈FL產生之熱能所致之鹵素加熱部4、閃光加熱部5及腔室6之過度之溫度上升，熱處理裝置1亦具備各種冷卻用構造。例如，於腔室6之壁體設置有水冷管(省略圖示)。又，鹵素加熱部4及閃光加熱部5係設為於內部形成氣流而進行排熱之空氣冷卻構造。又，對上側腔室窗63與燈光輻射窗53之間隙亦供給空氣，從而將閃光加熱部5及上側腔室窗63冷卻。In addition to the above structure, in order to prevent excessive temperature rise of the halogen heating part 4, flash heating part 5, and chamber 6 caused by the heat energy generated from the halogen lamp HL and flash lamp FL during the heat treatment of the semiconductor wafer W, the heat treatment device 1 Various cooling structures are also available. For example, a water cooling pipe (not shown) is provided on the wall of the chamber 6. In addition, the halogen heating unit 4 and the flash heating unit 5 are provided with an air cooling structure that forms an airflow inside to discharge heat. In addition, air is also supplied to the gap between the upper chamber window 63 and the light radiation window 53 to cool the flash heating part 5 and the upper chamber window 63.

其次，對熱處理裝置1中之處理動作進行說明。首先，說明針對成為處理對象之半導體晶圓W之熱處理之順序。此處，成為處理對象之半導體晶圓W係形成有高介電常數膜作為閘極絕緣膜之矽半導體基板。高介電常數膜係例如利用ALD(Atomic Layer Deposition，原子層沈積法)或MOCVD(Metal Organic Chemical Vapor Deposition，有機金屬化學氣相沈積)等方法堆積於半導體晶圓W之表面而成膜。熱處理裝置1於氨氣氣體環境中對該半導體晶圓W照射閃光而進行成膜後熱處理(PDA)，藉此消除成膜後之高介電常數膜中之缺陷。以下說明之熱處理裝置1之處理順序係藉由控制部3控制熱處理裝置1之各動作機構而進行。Next, the processing operation in the heat treatment apparatus 1 will be described. First, the procedure of the heat treatment for the semiconductor wafer W to be processed will be described. Here, the semiconductor wafer W to be processed is a silicon semiconductor substrate in which a high dielectric constant film is formed as a gate insulating film. The high dielectric constant film is deposited on the surface of the semiconductor wafer W by a method such as ALD (Atomic Layer Deposition) or MOCVD (Metal Organic Chemical Vapor Deposition). The heat treatment device 1 irradiates the semiconductor wafer W with a flash in an ammonia gas atmosphere to perform post-film formation heat treatment (PDA), thereby eliminating defects in the high dielectric constant film after film formation. The processing sequence of the heat treatment device 1 described below is performed by the control unit 3 controlling each operation mechanism of the heat treatment device 1.

首先，將形成有高介電常數膜之半導體晶圓W搬入至熱處理裝置1之腔室6。於半導體晶圓W之搬入時，打開閘閥185而使搬送開口部66開放，藉由裝置外部之搬送機械手經由搬送開口部66將形成有高介電常數膜之半導體晶圓W搬入腔室6內之熱處理空間65。此時，腔室6之內外均為大氣壓，因此隨著半導體晶圓W之搬入，裝置外氣體環境被夾帶至腔室6內之熱處理空間65。因此，亦可為打開供給閥98而自氮氣供給源92向腔室6內持續供給氮氣，藉此使氮氣流自搬送開口部66流出，從而將裝置外部之氣體環境向腔室6內之流入抑制為最小限度。進而，較佳為於閘閥185打開時，關閉排氣閥89而停止自腔室6之排氣。藉此，供給至腔室6內之氮氣僅自搬送開口部66流出，故能夠更有效地防止外部氣體環境之流入。First, the semiconductor wafer W on which the high dielectric constant film is formed is carried into the chamber 6 of the heat treatment apparatus 1. When the semiconductor wafer W is loaded, the gate valve 185 is opened to open the transfer opening 66, and the semiconductor wafer W with the high dielectric constant film formed is transferred into the chamber 6 by the transfer robot outside the device through the transfer opening 66 Within the heat treatment space 65. At this time, the inside and outside of the chamber 6 are at atmospheric pressure, so as the semiconductor wafer W is carried in, the gas environment outside the device is entrained to the heat treatment space 65 in the chamber 6. Therefore, it is also possible to open the supply valve 98 and continuously supply nitrogen from the nitrogen supply source 92 into the chamber 6, thereby causing the nitrogen flow to flow out from the conveying opening 66, thereby influencing the gas environment outside the device into the chamber 6 Inhibition is minimal. Furthermore, it is preferable that when the gate valve 185 is opened, the exhaust valve 89 is closed to stop the exhaust from the chamber 6. As a result, the nitrogen gas supplied into the chamber 6 only flows out from the conveyance opening 66, so the inflow of the external atmosphere can be prevented more effectively.

藉由搬送機械手搬入之半導體晶圓W進入至保持部7之正上方位置並停止。繼而，移載機構10之一對移載臂11自退避位置水平移動至移載動作位置並上升，藉此，頂起銷12通過貫通孔79並自基座74之保持板75之上表面突出，而接收半導體晶圓W。此時，頂起銷12上升至較基板支持銷77之上端更靠上方。The semiconductor wafer W carried in by the transport robot enters the position directly above the holding portion 7 and stops. Then, a pair of the transfer arm 11 of the transfer mechanism 10 moves horizontally from the retracted position to the transfer action position and rises, whereby the jacking pin 12 passes through the through hole 79 and protrudes from the upper surface of the holding plate 75 of the base 74 , And receive the semiconductor wafer W. At this time, the jack-up pin 12 rises above the upper end of the board support pin 77.

半導體晶圓W被載置於頂起銷12後，搬送機械手自熱處理空間65退出，藉由閘閥185封閉搬送開口部66。繼而，藉由一對移載臂11下降，半導體晶圓W自移載機構10被交接至保持部7之基座74並以水平姿勢自下方被保持。半導體晶圓W由豎立設置於保持板75上之複數個基板支持銷77支持而保持於基座74。又，半導體晶圓W係將成膜有高介電常數膜之表面設為上表面而保持於基座74。於由複數個基板支持銷77支持之半導體晶圓W之背面(與表面為相反側之主面)與保持板75之保持面75a之間形成有特定間隔。下降至基座74之下方之一對移載臂11藉由水平移動機構13而退避至退避位置、即凹部62之內側。After the semiconductor wafer W is placed on the jack-up pin 12, the transfer robot withdraws from the heat treatment space 65, and the transfer opening 66 is closed by the gate valve 185. Then, as the pair of transfer arms 11 descend, the semiconductor wafer W is transferred from the transfer mechanism 10 to the base 74 of the holding portion 7 and held from below in a horizontal posture. The semiconductor wafer W is supported by a plurality of substrate support pins 77 erected on the holding plate 75 and held on the base 74. In addition, the semiconductor wafer W is held on the susceptor 74 with the surface on which the high dielectric constant film is formed as the upper surface. A certain interval is formed between the back surface (the main surface on the opposite side to the surface) of the semiconductor wafer W supported by the plurality of substrate supporting pins 77 and the holding surface 75a of the holding plate 75. The pair of transfer arms 11 that have fallen below the base 74 is retracted to the retracted position, that is, inside the recess 62 by the horizontal movement mechanism 13.

半導體晶圓W收容於腔室6，藉由閘閥185封閉搬送開口部66後，將腔室6內減壓為低於大氣壓之氣壓。具體而言，藉由封閉搬送開口部66，腔室6內之熱處理空間65成為密閉空間。此狀態下，關閉用以供氣之供給閥96及供給閥98，並打開排氣閥89。藉此，對腔室6內進行排氣而不進行氣體供給，從而將腔室6內之熱處理空間65減壓。The semiconductor wafer W is housed in the chamber 6, and after the transfer opening 66 is closed by the gate valve 185, the pressure in the chamber 6 is reduced to a pressure lower than the atmospheric pressure. Specifically, by closing the conveyance opening 66, the heat treatment space 65 in the chamber 6 becomes a closed space. In this state, the supply valve 96 and the supply valve 98 for supplying air are closed, and the exhaust valve 89 is opened. Thereby, the inside of the chamber 6 is exhausted without gas supply, and the heat treatment space 65 in the chamber 6 is decompressed.

將腔室6內減壓至特定之壓力後，打開排氣閥89，並打開供給源閥93、供給閥96及供給閥98。藉由打開供給源閥93及供給閥96，自反應性氣體配管83a饋送氨氣。又，藉由打開供給閥98，自惰性氣體配管83b饋送氮氣。所饋送之氨氣與氮氣於氣體供給管83合流。繼而，氨氣與氮氣之混合氣體被供給至腔室6內之熱處理空間65。其結果，於腔室6內，保持於保持部7之半導體晶圓W之周邊在減壓狀態下形成氨氣氣體環境。氨氣氣體環境中之氨氣之濃度(即，氨氣與氮氣之混合比)並無特別限定，可設為適當值，例如為10 vol.%以下即可(本實施形態中為約2.5 vol.%)。氨氣之濃度可藉由利用質量流量控制器95及質量流量控制器97分別控制氨氣及氮氣之供給流量而進行調整。After the pressure in the chamber 6 is reduced to a specific pressure, the exhaust valve 89 is opened, and the supply source valve 93, the supply valve 96, and the supply valve 98 are opened. By opening the supply source valve 93 and the supply valve 96, ammonia gas is fed from the reactive gas pipe 83a. Furthermore, by opening the supply valve 98, nitrogen gas is fed from the inert gas pipe 83b. The fed ammonia gas and nitrogen gas merge in the gas supply pipe 83. Then, the mixed gas of ammonia and nitrogen is supplied to the heat treatment space 65 in the chamber 6. As a result, in the chamber 6, the periphery of the semiconductor wafer W held by the holding portion 7 forms an ammonia gas atmosphere in a reduced pressure state. The concentration of ammonia in the ammonia gas environment (that is, the mixing ratio of ammonia and nitrogen) is not particularly limited, and can be set to an appropriate value, for example, 10 vol.% or less (about 2.5 vol in this embodiment) .%). The concentration of ammonia can be adjusted by using the mass flow controller 95 and the mass flow controller 97 to control the supply flow rates of ammonia and nitrogen, respectively.

其次，鹵素加熱部4之40根鹵素燈HL一起點亮，而開始半導體晶圓W之預加熱(輔助加熱)。自鹵素燈HL出射之鹵素光透過由石英形成之下側腔室窗64及基座74照射至半導體晶圓W之下表面。因受到來自鹵素燈HL之光照射，半導體晶圓W被預加熱而溫度上升。再者，移載機構10之移載臂11因退避至凹部62之內側，故不會妨礙利用鹵素燈HL所進行之加熱。Next, the 40 halogen lamps HL of the halogen heating part 4 are lighted together, and the preheating (auxiliary heating) of the semiconductor wafer W is started. The halogen light emitted from the halogen lamp HL is irradiated to the lower surface of the semiconductor wafer W through the lower chamber window 64 and the base 74 formed of quartz. The semiconductor wafer W is preheated by being irradiated with light from the halogen lamp HL, and the temperature rises. Furthermore, since the transfer arm 11 of the transfer mechanism 10 is retracted to the inside of the recess 62, the heating by the halogen lamp HL is not hindered.

於進行利用鹵素燈HL之預加熱時，藉由輻射溫度計20測定半導體晶圓W之溫度。即，輻射溫度計20通過透明窗21接收自保持於基座74之半導體晶圓W之下表面經由開口部78輻射之紅外光，從而測定升溫中之晶圓溫度。所測定出之半導體晶圓W之溫度被傳達至控制部3。控制部3監視藉由來自鹵素燈HL之光照射而升溫之半導體晶圓W之溫度是否達到特定之預加熱溫度T1，並控制鹵素燈HL之輸出。即，控制部3基於輻射溫度計20之測定值，以半導體晶圓W之溫度成為預加熱溫度T1之方式對鹵素燈HL之輸出進行反饋控制。預加熱溫度T1為300℃以上600℃以下，本實施形態中為450℃。During the preheating using the halogen lamp HL, the temperature of the semiconductor wafer W is measured by the radiation thermometer 20. That is, the radiation thermometer 20 receives the infrared light radiated from the lower surface of the semiconductor wafer W held on the susceptor 74 through the opening 78 through the transparent window 21 to measure the temperature of the wafer during temperature rise. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3. The control unit 3 monitors whether the temperature of the semiconductor wafer W raised by the light from the halogen lamp HL reaches a specific preheating temperature T1, and controls the output of the halogen lamp HL. That is, the control unit 3 feedback-controls the output of the halogen lamp HL based on the measured value of the radiation thermometer 20 so that the temperature of the semiconductor wafer W becomes the preheating temperature T1. The preheating temperature T1 is 300°C or more and 600°C or less, and is 450°C in this embodiment.

半導體晶圓W之溫度達到預加熱溫度T1後，控制部3將半導體晶圓W暫時維持於該預加熱溫度T1。具體而言，於藉由輻射溫度計20測定出之半導體晶圓W之溫度達到預加熱溫度T1之時間點，控制部3調整鹵素燈HL之輸出，將半導體晶圓W之溫度維持於大致預加熱溫度T1。After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W at the preheating temperature T1. Specifically, when the temperature of the semiconductor wafer W measured by the radiation thermometer 20 reaches the preheating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL to maintain the temperature of the semiconductor wafer W at approximately the preheating temperature Temperature T1.

藉由進行此種利用鹵素燈HL之預加熱，使半導體晶圓W之整體均一地升溫至預加熱溫度T1。於利用鹵素燈HL之預加熱之階段中，有更易產生散熱之半導體晶圓W之周緣部之溫度較中央部降低之傾向，但鹵素加熱部4中之鹵素燈HL之配設密度係於周緣部對向之區域高於與基板W之中央部對向之區域。因此，照射至易產生散熱之半導體晶圓W之周緣部之光量變多，從而能夠使預加熱階段中之半導體晶圓W之面內溫度分佈均一。By performing such pre-heating using the halogen lamp HL, the entire semiconductor wafer W is uniformly heated to the pre-heating temperature T1. During the pre-heating stage using the halogen lamp HL, the temperature of the peripheral part of the semiconductor wafer W, which is more likely to generate heat to be dissipated, tends to be lower than that of the central part. However, the arrangement density of the halogen lamp HL in the halogen heating part 4 is at the periphery The area facing the substrate W is higher than the area facing the center of the substrate W. Therefore, the amount of light irradiated to the periphery of the semiconductor wafer W that easily generates heat is increased, so that the in-plane temperature distribution of the semiconductor wafer W in the preheating stage can be made uniform.

於半導體晶圓W之溫度達到預加熱溫度T1並經過特定時間之時間點，閃光加熱部5之閃光燈FL對保持於基座74之半導體晶圓W之表面進行閃光照射。此時，自閃光燈FL輻射之閃光之一部分直接照向腔室6內，另一部分暫時先由反射器52反射後照向腔室6內，從而藉由該等閃光之照射進行半導體晶圓W之閃光加熱。When the temperature of the semiconductor wafer W reaches the preheating temperature T1 and a specific time has elapsed, the flash lamp FL of the flash heating section 5 flashes the surface of the semiconductor wafer W held on the susceptor 74. At this time, a part of the flash light radiated from the flash lamp FL is directly irradiated into the chamber 6, and the other part is temporarily reflected by the reflector 52 and then irradiated into the chamber 6, so that the semiconductor wafer W is irradiated by these flashes. Flash heating.

閃光加熱係藉由來自閃光燈FL之閃光(Flash)照射而進行，故能夠於短時間內使半導體晶圓W之表面溫度上升。即，自閃光燈FL照射之閃光係預先儲存於電容器之靜電能量轉換為極短之光脈衝後之照射時間為0.1毫秒以上100毫秒以下左右之極短且較強之閃光。而且，藉由自閃光燈FL向成膜有高介電常數膜之半導體晶圓W之表面照射閃光，包含高介電常數膜之半導體晶圓W之表面瞬間升溫至處理溫度T2，從而執行成膜後熱處理。作為藉由閃光照射而使半導體晶圓W之表面所達到之最高溫度(峰值溫度)之處理溫度T2為600℃以上1200℃以下，本實施形態中為1000℃。The flash heating is performed by flash irradiation from the flash lamp FL, so the surface temperature of the semiconductor wafer W can be increased in a short time. That is, the flash light irradiated from the flash lamp FL is an extremely short and strong flash after the electrostatic energy previously stored in the capacitor is converted into an extremely short light pulse, and the irradiation time is about 0.1 millisecond to 100 milliseconds. Moreover, by irradiating the flash from the flash lamp FL to the surface of the semiconductor wafer W on which the high dielectric constant film is formed, the surface of the semiconductor wafer W including the high dielectric constant film is instantly heated to the processing temperature T2, thereby performing the film formation After heat treatment. The processing temperature T2, which is the highest temperature (peak temperature) that the surface of the semiconductor wafer W reaches by flash irradiation, is 600° C. or more and 1200° C. or less, and is 1000° C. in this embodiment.

當於氨氣氣體環境中半導體晶圓W之表面升溫至處理溫度T2後執行成膜後熱處理時，高介電常數膜之氮化得到促進，並且高介電常數膜中所存在之點缺陷等缺陷消失。再者，因自閃光燈FL之照射時間為0.1毫秒以上100毫秒以下左右之短時間，故半導體晶圓W之表面溫度自預加熱溫度T1升溫至處理溫度T2所需之時間亦為未達1秒之極短時間。閃光照射後之半導體晶圓W之表面溫度即刻自處理溫度T2迅速地下降。When the surface of the semiconductor wafer W is heated to the processing temperature T2 in an ammonia gas atmosphere and the post-film formation heat treatment is performed, the nitridation of the high dielectric constant film is promoted, and the point defects in the high dielectric constant film, etc. The defect disappeared. Furthermore, since the irradiation time from the flash lamp FL is a short time of 0.1 millisecond or more and 100 milliseconds or less, the time required for the surface temperature of the semiconductor wafer W to rise from the preheating temperature T1 to the processing temperature T2 is also less than 1 second It's a very short time. The surface temperature of the semiconductor wafer W immediately after the flash irradiation drops from the processing temperature T2.

閃光加熱處理結束後，關閉供給閥96及供給閥98並再次將腔室6內進行減壓。藉此，可自腔室6內之熱處理空間65排出有害之氨氣。繼而，關閉排氣閥89並打開供給閥98，自氮氣供給源92向腔室6內供給氮氣從而使其恢復至常壓(大氣壓)。藉此，腔室6內被取代為氮氣氣體環境。又，鹵素燈HL亦熄滅，藉此半導體晶圓W亦自預加熱溫度T1降溫。降溫中之半導體晶圓W之溫度係藉由輻射溫度計20進行測定，其測定結果被傳達至控制部3。控制部3根據測定結果監視半導體晶圓W之溫度是否降溫至特定溫度。繼而，半導體晶圓W之溫度降溫至特定以下之後，移載機構10之一對移載臂11再次自退避位置水平移動至移載動作位置並上升，藉此頂起銷12自基座74之上表面突出，從而自基座74接收熱處理後之半導體晶圓W。繼而，藉由閘閥185而封閉之搬送開口部66開放，載置於頂起銷12上之半導體晶圓W由裝置外部之搬送機械手搬出，熱處理裝置1中之半導體晶圓W之加熱處理完成。After the flash heating process is completed, the supply valve 96 and the supply valve 98 are closed, and the pressure in the chamber 6 is reduced again. Thereby, harmful ammonia gas can be discharged from the heat treatment space 65 in the chamber 6. Then, the exhaust valve 89 is closed and the supply valve 98 is opened, and nitrogen is supplied into the chamber 6 from the nitrogen supply source 92 to return it to normal pressure (atmospheric pressure). Thereby, the inside of the chamber 6 is replaced with a nitrogen gas atmosphere. In addition, the halogen lamp HL is also turned off, whereby the semiconductor wafer W is also cooled from the preheating temperature T1. The temperature of the semiconductor wafer W during cooling is measured by the radiation thermometer 20, and the measurement result is transmitted to the control unit 3. The control unit 3 monitors whether the temperature of the semiconductor wafer W is lowered to a specific temperature based on the measurement result. Then, after the temperature of the semiconductor wafer W drops below a certain level, one of the transfer arms 11 of the transfer mechanism 10 moves horizontally from the retreat position to the transfer operation position and rises, whereby the jacking pin 12 is lifted from the base 74 The upper surface protrudes so as to receive the heat-treated semiconductor wafer W from the base 74. Then, the transfer opening 66 closed by the gate valve 185 is opened, the semiconductor wafer W placed on the jacking pin 12 is removed by the transfer robot outside the device, and the heating process of the semiconductor wafer W in the heat treatment device 1 is completed .

此外，要對上述熱處理裝置1定期地或不定期地進行維護。不定期地進行維護的情況係熱處理裝置1產生某些故障之情形。於進行熱處理裝置1之維護時，使腔室6之內部開放後將各種配管拆卸。因此，必須於維護前預先將有害之氨氣自包含腔室6內之熱處理空間65及各種配管之熱處理裝置1之整體完全地排出。In addition, the above-mentioned heat treatment device 1 should be maintained regularly or irregularly. The case where maintenance is performed irregularly is a case where some failure occurs in the heat treatment device 1. When performing maintenance of the heat treatment device 1, the inside of the chamber 6 is opened and various pipes are removed. Therefore, it is necessary to completely discharge the harmful ammonia gas from the heat treatment space 65 in the chamber 6 and the entire heat treatment device 1 containing various pipes before maintenance.

然而，有如下情形：若僅打開排氣閥89將腔室6內之氣體環境進行排氣，則難以將殘留於反應性氣體配管83a之氨氣完全地排出。自反應性氣體配管83a之氨氣之排出之容易度較大地依存於質量流量控制器95。於反應性氣體配管83a，根據製程之目的而設置有多種滿刻度尺寸之質量流量控制器95。例如，於需要用於較大之氨氣供給流之情形時將滿刻度尺寸較大之(例如100升/分鐘)質量流量控制器95設置於反應性氣體配管83a。另一方面，於要求高精度之氨氣供給流量控制之情形時將滿刻度尺寸較小之(例如20升/分鐘)質量流量控制器95設置於反應性氣體配管83a。However, there are cases in which if only the exhaust valve 89 is opened to exhaust the gas environment in the chamber 6, it is difficult to completely exhaust the ammonia gas remaining in the reactive gas pipe 83a. The ease of discharging the ammonia gas from the reactive gas pipe 83a largely depends on the mass flow controller 95. In the reactive gas piping 83a, mass flow controllers 95 of various full scale sizes are provided according to the purpose of the manufacturing process. For example, when it is necessary to use a larger ammonia gas supply flow, a mass flow controller 95 with a larger full scale size (for example, 100 liters/min) is installed in the reactive gas pipe 83a. On the other hand, when high-precision ammonia gas supply flow control is required, a mass flow controller 95 with a small full scale size (for example, 20 liters/minute) is installed in the reactive gas pipe 83a.

較小之滿刻度尺寸之質量流量控制器95之壓力損失大於較大之滿刻度尺寸之質量流量控制器95。因此，於在反應性氣體配管83a設置有較小之滿刻度尺寸之質量流量控制器95之情形時，難以進行自反應性氣體配管83a之排氣，而難以排出殘留於管內之氨氣。因此，於本實施形態中，以如下方式無關於質量流量控制器95之滿刻度尺寸而將氨氣自反應性氣體配管83a完全地排出。再者，無需於上述半導體晶圓W之製程之中途使腔室6開放，故即便僅於進行自腔室6之排氣時在反應性氣體配管83a中殘留有少許氨氣亦不會成為問題。The pressure loss of the smaller full-scale mass flow controller 95 is greater than that of the larger full-scale mass flow controller 95. Therefore, when the reactive gas piping 83a is provided with a smaller full-scale mass flow controller 95, it is difficult to exhaust from the reactive gas piping 83a, and it is difficult to discharge the ammonia gas remaining in the pipe. Therefore, in this embodiment, the ammonia gas is completely discharged from the reactive gas pipe 83a regardless of the full scale size of the mass flow controller 95 as follows. Furthermore, there is no need to open the chamber 6 in the middle of the above-mentioned semiconductor wafer W process, so even if only a small amount of ammonia gas remains in the reactive gas piping 83a when exhausting from the chamber 6 is performed, it will not be a problem .

圖8係表示熱處理裝置1之氣體環境取代方法之順序之流程圖。首先，於在進行維護前之腔室6內不存在半導體晶圓W之狀態下點亮鹵素燈HL(步驟S1)。藉由來自鹵素燈HL之光照射，腔室6內之氣體環境被加熱而升溫，氣體環境中之氣體分子之熱運動活化。步驟S1中之氣體環境之加熱溫度並無特別限定，例如藉由來自鹵素燈HL之約30分鐘之光照射，腔室6內之氣體環境被加熱至約300℃。FIG. 8 is a flowchart showing the sequence of the method of replacing the gas atmosphere of the heat treatment device 1. First, the halogen lamp HL is turned on in a state where there is no semiconductor wafer W in the chamber 6 before maintenance (step S1). By the light from the halogen lamp HL, the gas environment in the chamber 6 is heated to increase the temperature, and the thermal motion of the gas molecules in the gas environment is activated. The heating temperature of the gas environment in step S1 is not particularly limited. For example, by light irradiation from the halogen lamp HL for about 30 minutes, the gas environment in the chamber 6 is heated to about 300°C.

腔室6內之氣體環境被加熱後，執行反應性氣體配管83a之排氣(步驟S2)。於進行步驟S2之排氣時，關閉供給源閥93、旁路閥85及供給閥98，且打開供給閥96及排氣閥89。藉此，自氣體排氣管88進行腔室6內及包含質量流量控制器95之反應性氣體配管83a(準確而言，較供給源閥93更靠下游側之部位)之排氣，反應性氣體配管83a內被減壓。但，如上所述，於設置在反應性氣體配管83a之質量流量控制器95之滿刻度尺寸較小之情形時，難以進行自反應性氣體配管83a之排氣，氨氣易殘留。After the gas environment in the chamber 6 is heated, exhaust of the reactive gas pipe 83a is performed (step S2). When performing the exhaust of step S2, the supply source valve 93, the bypass valve 85, and the supply valve 98 are closed, and the supply valve 96 and the exhaust valve 89 are opened. Thereby, from the gas exhaust pipe 88, the chamber 6 and the reactive gas pipe 83a including the mass flow controller 95 (to be precise, the position on the downstream side of the supply source valve 93) is exhausted. The pressure in the gas pipe 83a is reduced. However, as described above, when the full scale size of the mass flow controller 95 installed in the reactive gas piping 83a is small, it is difficult to exhaust from the reactive gas piping 83a, and ammonia gas tends to remain.

因此，本實施形態中，持續進行排氣直至供給確認壓力計94之測定值成為預先設定之第1壓力以下為止(步驟S3)。具體而言，例如，預先對供給確認壓力計94設定大氣壓－90 kPa作為第1壓力，當測定值成為第1壓力以下時使供給確認壓力計94發送異常信號。Therefore, in this embodiment, exhaust is continued until the measured value of the supply confirmation pressure gauge 94 becomes equal to or lower than the preset first pressure (step S3). Specifically, for example, the supply confirmation pressure gauge 94 is set in advance at atmospheric pressure -90 kPa as the first pressure, and when the measured value becomes equal to or lower than the first pressure, the supply confirmation pressure gauge 94 is caused to transmit an abnormal signal.

當供給確認壓力計94之測定值成為第1壓力以下，供給確認壓力計94發送異常信號時，進入至步驟S4，停止排氣並執行對反應性氣體配管83a之氮氣供給。此時，關閉供給源閥93、供給閥96及供給閥98，打開旁路閥85。藉此，自氮氣供給源92供給之氮氣通過旁路配管84後填充至包含質量流量控制器95之反應性氣體配管83a(準確而言，供給源閥93與供給閥96之間之部位)。再者，於對反應性氣體配管83a進行氮氣供給之期間，排氣閥89亦持續打開，腔室6內被減壓。When the measured value of the supply confirmation pressure gauge 94 becomes below the first pressure and the supply confirmation pressure gauge 94 sends an abnormal signal, the process proceeds to step S4, the exhaust is stopped, and the nitrogen supply to the reactive gas pipe 83a is performed. At this time, the supply source valve 93, the supply valve 96, and the supply valve 98 are closed, and the bypass valve 85 is opened. Thereby, the nitrogen supplied from the nitrogen supply source 92 passes through the bypass pipe 84 and is then filled into the reactive gas pipe 83a (to be precise, the portion between the supply source valve 93 and the supply valve 96) including the mass flow controller 95. Furthermore, while the reactive gas pipe 83a is being supplied with nitrogen, the exhaust valve 89 is also continuously opened, and the pressure in the chamber 6 is reduced.

本實施形態中，持續進行對反應性氣體配管83a之氮氣供給直至供給確認壓力計94之測定值成為預先設定之第2壓力以上(步驟S5)。第2壓力高於第1壓力。具體而言，例如預先對供給確認壓力計94設定170 kPa作為第2壓力，當測定值成為第2壓力以上時使供給確認壓力計94發送正常信號。In this embodiment, the supply of nitrogen to the reactive gas pipe 83a is continued until the measurement value of the supply confirmation pressure gauge 94 becomes equal to or higher than the second pressure set in advance (step S5). The second pressure is higher than the first pressure. Specifically, for example, 170 kPa is set as the second pressure in the supply confirmation pressure gauge 94 in advance, and when the measured value becomes equal to or higher than the second pressure, the supply confirmation pressure gauge 94 is caused to transmit a normal signal.

當供給確認壓力計94之測定值成為第2壓力以上，供給確認壓力計94發送正常信號時，進入至步驟S6，藉由控制部3判定是否重複設定次數之上述排氣與氮氣供給。對於控制部3，重複之設定次數係例如使用GUI(Graphical User Interface，圖形用戶界面)而預先設定。於未重複設定次數之排氣與氮氣供給之情形時，再次重複步驟S2～步驟S5。例如，於將重複之設定次數設定為“10”之情形時，上述排氣與氮氣供給重複10次。When the measured value of the supply confirmation pressure gauge 94 becomes equal to or higher than the second pressure and the supply confirmation pressure gauge 94 sends a normal signal, the process proceeds to step S6, and the control unit 3 determines whether to repeat the above-mentioned exhaust gas and nitrogen supply for a set number of times. For the control unit 3, the set number of repetitions is set in advance using GUI (Graphical User Interface), for example. When the exhaust and nitrogen supply are not repeated the set number of times, step S2 to step S5 are repeated again. For example, when the set number of repetitions is set to "10", the above exhaust and nitrogen supply are repeated 10 times.

於本實施形態中，持續進行反應性氣體配管83a之排氣直至供給確認壓力計94之測定值成為第1壓力以下為止。於質量流量控制器95之滿刻度尺寸較小之情形時，亦有難以進行自反應性氣體配管83a之排氣之情況，但藉由持續進行反應性氣體配管83a之排氣直至供給確認壓力計94之測定值成為第1壓力以下為止，無關於質量流量控制器95之滿刻度尺寸，皆能夠將反應性氣體配管83a減壓至第1壓力以下並將殘留氨氣自反應性氣體配管83a完全地排出。In the present embodiment, the exhaust of the reactive gas pipe 83a is continued until the measured value of the supply confirmation pressure gauge 94 becomes equal to or lower than the first pressure. When the full scale size of the mass flow controller 95 is small, it may be difficult to exhaust from the reactive gas piping 83a, but by continuing to exhaust the reactive gas piping 83a until it is supplied to the confirmation pressure gauge Until the measured value of 94 becomes below the first pressure, regardless of the full scale size of the mass flow controller 95, the reactive gas piping 83a can be decompressed to below the first pressure and the residual ammonia gas can be completely removed from the reactive gas piping 83a.地出。 Ground discharge.

又，自反應性氣體配管83a排出氨氣後，持續進行對反應性氣體配管83a之氮氣供給直至供給確認壓力計94之測定值成為第2壓力以上為止。於質量流量控制器95之滿刻度尺寸較小之情形時，亦難以進行對反應性氣體配管83a之供氣，但藉由持續進行對反應性氣體配管83a之氮氣供給直至供給確認壓力計94之測定值成為第2壓力以上為止，無關於質量流量控制器95之滿刻度尺寸，皆能夠充分地將氮氣供給並填充至反應性氣體配管83a。Furthermore, after the ammonia gas is discharged from the reactive gas pipe 83a, the supply of nitrogen gas to the reactive gas pipe 83a is continued until the measured value of the supply confirmation pressure gauge 94 becomes the second pressure or more. When the full scale size of the mass flow controller 95 is small, it is difficult to supply gas to the reactive gas piping 83a, but by continuing to supply nitrogen to the reactive gas piping 83a until the supply confirmation pressure gauge 94 Until the measured value becomes the second pressure or higher, regardless of the full scale size of the mass flow controller 95, it is possible to sufficiently supply and fill the reactive gas pipe 83a with nitrogen gas.

如此，繼上述排氣後進行氮氣供給，藉此能夠將氨氣自供給氨氣之反應性氣體配管83a完全地排出，並向反應性氣體配管83a內填充氮氣。其結果，即便於維護時使腔室6之內部開放，亦無微量地殘留於反應性氣體配管83a內之氨氣洩漏之虞。又，藉由重複複數次此種自反應性氣體配管83a之排氣與對反應性氣體配管83a之氮氣供給，能夠更確實地將氨氣自反應性氣體配管83a排出，並向反應性氣體配管83a內填充氮氣。In this way, by supplying nitrogen gas after the exhaust gas described above, the ammonia gas can be completely discharged from the reactive gas pipe 83a for supplying ammonia gas, and the reactive gas pipe 83a can be filled with nitrogen gas. As a result, even if the inside of the chamber 6 is opened during maintenance, there is no possibility of leakage of ammonia gas remaining in the reactive gas pipe 83a in a small amount. In addition, by repeating such exhaust from the reactive gas piping 83a and nitrogen supply to the reactive gas piping 83a multiple times, it is possible to more reliably discharge the ammonia gas from the reactive gas piping 83a and to the reactive gas piping Nitrogen is filled in 83a.

用以判定排氣停止及氮氣之供給停止之供給確認壓力計94原本係判定是否以合理之壓力自氨氣供給源91供給氨氣之要素。即，若如本實施形態般，則無需新設特別之機構，即可將氨氣自反應性氣體配管83a完全地排出並向反應性氣體配管83a內填充氮氣。又，只要於供給確認壓力計94發送異常信號後停止排氣，並於供給確認壓力計94發送正常信號後停止氮氣供給即可，故供氣排氣之控制較為容易。The supply confirmation pressure gauge 94 used to determine whether the exhaust gas is stopped and the supply of nitrogen gas is stopped is originally an element for determining whether the ammonia gas is supplied from the ammonia gas supply source 91 at a reasonable pressure. That is, as in the present embodiment, it is possible to completely discharge ammonia gas from the reactive gas pipe 83a and to fill the reactive gas pipe 83a with nitrogen gas without requiring a new special mechanism. Moreover, it is only necessary to stop the exhaust after the supply confirmation pressure gauge 94 sends an abnormal signal, and stop the nitrogen supply after the supply confirmation pressure gauge 94 sends a normal signal, so the control of the supply and exhaustion is easier.

又，於本實施形態中，於進行排氣前自鹵素燈HL進行光照射而將腔室6內之氣體環境加熱。藉此，腔室6內氣體環境中之氣體分子之熱運動活化，於後續之排氣步驟中氣體分子迅速地被排氣。其結果，能夠縮短供給確認壓力計94之測定值成為第1壓力以下為止所需之排氣時間。In addition, in this embodiment, light is irradiated from the halogen lamp HL to heat the gas environment in the chamber 6 before exhausting. Thereby, the thermal motion of the gas molecules in the gas environment in the chamber 6 is activated, and the gas molecules are quickly exhausted in the subsequent exhausting step. As a result, it is possible to shorten the exhaust time required until the measured value of the supply confirmation pressure gauge 94 becomes equal to or lower than the first pressure.

以上，對本發明之實施形態進行了說明，但本發明可於不脫離其主旨之範圍內進行除上述內容以外之各種變更。例如，於上述步驟S3中，持續進行排氣直至供給確認壓力計94之測定值成為預先設定之第1壓力以下為止，除此之外，亦可持續進行排氣直至真空壓力計191之測定值成為特定值(例如0.1 kPa)以下為止。然而，於質量流量控制器95之滿刻度尺寸較小，自反應性氣體配管83a之排氣較為困難之情形時，多數情況下，於供給確認壓力計94之測定值成為預先設定之第1壓力以下之時間點，真空壓力計191之測定值業已成為特定值以下。The embodiments of the present invention have been described above, but the present invention can be modified in various ways other than the above without departing from the gist of the present invention. For example, in the above step S3, the evacuation is continued until the measurement value of the supply confirmation pressure gauge 94 becomes below the preset first pressure. In addition to this, the evacuation can also be continued until the measurement value of the vacuum pressure gauge 191 Until it becomes a specific value (for example, 0.1 kPa) or less. However, when the full scale size of the mass flow controller 95 is small and it is difficult to exhaust from the reactive gas piping 83a, in most cases, the measured value of the pressure gauge 94 in the supply confirmation becomes the preset first pressure At the following point in time, the measured value of the vacuum pressure gauge 191 has become below the specified value.

又，於上述實施形態中，自反應性氣體配管83a供給氨氣，但並不限定於此，亦可自反應性氣體配管83a供給氧氣(O₂ )、氫氣(H₂ )、氯氣(Cl₂ )、氯化氫(HCl)、臭氧(O₃ )、一氧化氮(NO)、一氧化二氮(N₂ O)、二氧化氮(NO₂ )、三氟化氮(NF₃ )等作為反應性氣體。又，自惰性氣體配管83b供給之氣體亦不限定於氮氣，亦可自惰性氣體配管83b供給氬氣(Ar)、氦氣(He)等作為惰性氣體。即便於使用該等各種氣體之情形時，亦可藉由應用本發明之技術，自反應性氣體配管83a將反應性氣體完全地排出並向該反應性氣體配管83a內填充惰性氣體。In addition, in the above embodiment, the ammonia gas is supplied from the reactive gas pipe 83a, but it is not limited to this. Oxygen (O ₂ ), hydrogen (H ₂ ), and chlorine (Cl _{2) may be supplied from the reactive gas pipe 83a.} ), hydrogen chloride (HCl), ozone (O ₃ ), nitric oxide (NO), nitrous oxide (N ₂ O), nitrogen dioxide (NO ₂ ), nitrogen trifluoride (NF ₃ ), etc. as reactivity gas. In addition, the gas supplied from the inert gas pipe 83b is not limited to nitrogen, and argon (Ar), helium (He), etc. may be supplied as the inert gas from the inert gas pipe 83b. Even when these various gases are used, by applying the technology of the present invention, the reactive gas can be completely discharged from the reactive gas piping 83a and the reactive gas piping 83a can be filled with an inert gas.

又，本發明之技術並不限定於質量流量控制器95之滿刻度尺寸較小之情形，例如亦能夠較佳地應用於反應性氣體配管83a之配管直徑較細，壓力損失較大之情形。In addition, the technology of the present invention is not limited to the case where the full scale size of the mass flow controller 95 is small, and can be preferably applied to the case where the reactive gas piping 83a has a small pipe diameter and large pressure loss, for example.

又，於上述實施形態中，使閃光加熱部5具備30根閃光燈FL，但並不限定於此，閃光燈FL之根數可設為任意數量。又，閃光燈FL並不限定於氙氣閃光燈，亦可為氪氣閃光燈。又，鹵素加熱部4所具備之鹵素燈HL之根數亦不限定於40根，可設為任意數量。In addition, in the above-mentioned embodiment, the flash heating unit 5 is provided with 30 flash lamps FL, but it is not limited to this, and the number of flash lamps FL may be any number. In addition, the flash lamp FL is not limited to a xenon flash lamp, and may be a krypton flash lamp. In addition, the number of halogen lamps HL included in the halogen heating unit 4 is not limited to 40, and can be any number.

又，於上述實施形態中，使用燈絲方式之鹵素燈HL作為連續發光1秒以上之連續照明燈來進行半導體晶圓W之預加熱，但並不限定於此，亦可使用放電型電弧燈(例如氙氣電弧燈)代替鹵素燈HL作為連續照明燈進行預加熱。此情形時，於排氣前藉由來自電弧燈之光照射將腔室6內之氣體環境加熱。In addition, in the above embodiment, the halogen lamp HL of the filament method is used as a continuous illuminator that emits light continuously for 1 second or longer to preheat the semiconductor wafer W, but it is not limited to this, and a discharge arc lamp may also be used ( For example, a xenon arc lamp) replaces the halogen lamp HL as a continuous lighting lamp for preheating. In this case, the gas environment in the chamber 6 is heated by the light from the arc lamp before exhausting.

又，根據熱處理裝置1之不同，成為處理對象之基板並不限定於半導體晶圓，亦可為用於液晶表示裝置等平板顯示器之玻璃基板或太陽電池用基板。又，於熱處理裝置1中，亦可進行被注入之雜質之活化、金屬與矽之接合、或多晶矽之結晶化。In addition, depending on the heat treatment device 1, the substrate to be processed is not limited to a semiconductor wafer, and may be a glass substrate used for a flat panel display such as a liquid crystal display device or a substrate for solar cells. In addition, in the heat treatment device 1, activation of implanted impurities, bonding of metal and silicon, or crystallization of polysilicon can also be performed.

1‧‧‧熱處理裝置 3‧‧‧控制部 4‧‧‧鹵素加熱部 5‧‧‧閃光加熱部 6‧‧‧腔室 7‧‧‧保持部 10‧‧‧移載機構 11‧‧‧移載臂 12‧‧‧頂起銷 13‧‧‧水平移動機構 14‧‧‧升降機構 20‧‧‧輻射溫度計 21‧‧‧透明窗 41‧‧‧殼體 43‧‧‧反射器 51‧‧‧殼體 52‧‧‧反射器 53‧‧‧燈光輻射窗 61‧‧‧腔室側部 61a‧‧‧貫通孔 62‧‧‧凹部 63‧‧‧上側腔室窗 64‧‧‧下側腔室窗 65‧‧‧熱處理空間 66‧‧‧搬送開口部 68‧‧‧反射環 69‧‧‧反射環 71‧‧‧基台環 72‧‧‧連結部 74‧‧‧基座 75‧‧‧保持板 75a‧‧‧保持面 76‧‧‧導環 77‧‧‧基板支持銷 78‧‧‧開口部 79‧‧‧貫通孔 81‧‧‧氣體供給孔 82‧‧‧緩衝空間 83‧‧‧氣體供給管 83a‧‧‧反應性氣體配管 83b‧‧‧惰性氣體配管 84‧‧‧旁路配管 85‧‧‧旁路閥 86‧‧‧氣體排氣孔 87‧‧‧緩衝空間 88‧‧‧氣體排氣管 89‧‧‧排氣閥 91‧‧‧氨氣供給源 92‧‧‧氮氣供給源 93‧‧‧供給源閥 94‧‧‧供給確認壓力計 95‧‧‧質量流量控制器 96‧‧‧供給閥 97‧‧‧質量流量控制器 98‧‧‧供給閥 185‧‧‧閘閥 190‧‧‧排氣部 191‧‧‧真空壓力計 FL‧‧‧閃光燈 HL‧‧‧鹵素燈 S1‧‧‧步驟 S2‧‧‧步驟 S3‧‧‧步驟 S4‧‧‧步驟 S5‧‧‧步驟 S6‧‧‧步驟 W‧‧‧半導體晶圓1‧‧‧Heat treatment device 3‧‧‧Control Department 4‧‧‧Halogen heating part 5‧‧‧Flash heating section 6‧‧‧Chamber 7‧‧‧Retention Department 10‧‧‧Transfer agency 11‧‧‧Transfer arm 12‧‧‧Ejector pin 13‧‧‧Horizontal movement mechanism 14‧‧‧Lifting mechanism 20‧‧‧Radiation Thermometer 21‧‧‧Transparent window 41‧‧‧Shell 43‧‧‧Reflector 51‧‧‧Shell 52‧‧‧Reflector 53‧‧‧Light radiation window 61‧‧‧The side of the chamber 61a‧‧‧Through hole 62‧‧‧Concave 63‧‧‧Upper chamber window 64‧‧‧Lower chamber window 65‧‧‧Heat treatment space 66‧‧‧Transport opening 68‧‧‧Reflective ring 69‧‧‧Reflective ring 71‧‧‧Abutment Ring 72‧‧‧Connecting part 74‧‧‧Pedestal 75‧‧‧Holding plate 75a‧‧‧Keep the surface 76‧‧‧Guide Ring 77‧‧‧Substrate support pin 78‧‧‧Opening 79‧‧‧Through hole 81‧‧‧Gas supply hole 82‧‧‧Buffer space 83‧‧‧Gas supply pipe 83a‧‧‧Reactive gas piping 83b‧‧‧Inert gas piping 84‧‧‧Bypass piping 85‧‧‧Bypass valve 86‧‧‧Gas vent 87‧‧‧Buffer space 88‧‧‧Gas exhaust pipe 89‧‧‧Exhaust valve 91‧‧‧Ammonia supply source 92‧‧‧Nitrogen supply source 93‧‧‧Supply source valve 94‧‧‧Supply confirmation pressure gauge 95‧‧‧Mass Flow Controller 96‧‧‧Supply valve 97‧‧‧Mass Flow Controller 98‧‧‧Supply valve 185‧‧‧Gate valve 190‧‧‧Exhaust 191‧‧‧Vacuum Pressure Gauge FL‧‧‧Flash HL‧‧‧Halogen lamp S1‧‧‧Step S2‧‧‧Step S3‧‧‧Step S4‧‧‧Step S5‧‧‧Step S6‧‧‧Step W‧‧‧Semiconductor Wafer

圖1係表示本發明之熱處理裝置之構成之縱剖視圖。 圖2係表示保持部之整體外觀之立體圖。 圖3係基座之俯視圖。 圖4係基座之剖視圖。 圖5係移載機構之俯視圖。 圖6係移載機構之側視圖。 圖7係表示複數個鹵素燈之配置之俯視圖。 圖8係表示熱處理裝置之氣體環境取代方法之順序之流程圖。Fig. 1 is a longitudinal sectional view showing the structure of the heat treatment device of the present invention. Fig. 2 is a perspective view showing the overall appearance of the holding portion. Figure 3 is a top view of the base. Figure 4 is a cross-sectional view of the base. Figure 5 is a top view of the transfer mechanism. Figure 6 is a side view of the transfer mechanism. Fig. 7 is a plan view showing the arrangement of a plurality of halogen lamps. Fig. 8 is a flowchart showing the sequence of the gas environment replacement method of the heat treatment device.

1‧‧‧熱處理裝置 1‧‧‧Heat treatment device

3‧‧‧控制部 3‧‧‧Control Department

4‧‧‧鹵素加熱部 4‧‧‧Halogen heating part

5‧‧‧閃光加熱部 5‧‧‧Flash heating section

6‧‧‧腔室 6‧‧‧Chamber

7‧‧‧保持部 7‧‧‧Retention Department

10‧‧‧移載機構 10‧‧‧Transfer agency

20‧‧‧輻射溫度計 20‧‧‧Radiation Thermometer

21‧‧‧透明窗 21‧‧‧Transparent window

41‧‧‧殼體 41‧‧‧Shell

43‧‧‧反射器 43‧‧‧Reflector

51‧‧‧殼體 51‧‧‧Shell

52‧‧‧反射器 52‧‧‧Reflector

53‧‧‧燈光輻射窗 53‧‧‧Light radiation window

61‧‧‧腔室側部 61‧‧‧The side of the chamber

61a‧‧‧貫通孔 61a‧‧‧Through hole

62‧‧‧凹部 62‧‧‧Concave

63‧‧‧上側腔室窗 63‧‧‧Upper chamber window

64‧‧‧下側腔室窗 64‧‧‧Lower chamber window

65‧‧‧熱處理空間 65‧‧‧Heat treatment space

66‧‧‧搬送開口部 66‧‧‧Transport opening

68‧‧‧反射環 68‧‧‧Reflective ring

69‧‧‧反射環 69‧‧‧Reflective ring

74‧‧‧基座 74‧‧‧Pedestal

81‧‧‧氣體供給孔 81‧‧‧Gas supply hole

82‧‧‧緩衝空間 82‧‧‧Buffer space

83‧‧‧氣體供給管 83‧‧‧Gas supply pipe

83a‧‧‧反應性氣體配管 83a‧‧‧Reactive gas piping

83b‧‧‧惰性氣體配管 83b‧‧‧Inert gas piping

84‧‧‧旁路配管 84‧‧‧Bypass piping

85‧‧‧旁路閥 85‧‧‧Bypass valve

86‧‧‧氣體排氣孔 86‧‧‧Gas vent

87‧‧‧緩衝空間 87‧‧‧Buffer space

88‧‧‧氣體排氣管 88‧‧‧Gas exhaust pipe

89‧‧‧排氣閥 89‧‧‧Exhaust valve

91‧‧‧氨氣供給源 91‧‧‧Ammonia supply source

92‧‧‧氮氣供給源 92‧‧‧Nitrogen supply source

93‧‧‧供給源閥 93‧‧‧Supply source valve

94‧‧‧供給確認壓力計 94‧‧‧Supply confirmation pressure gauge

95‧‧‧質量流量控制器 95‧‧‧Mass Flow Controller

96‧‧‧供給閥 96‧‧‧Supply valve

97‧‧‧質量流量控制器 97‧‧‧Mass Flow Controller

98‧‧‧供給閥 98‧‧‧Supply valve

185‧‧‧閘閥 185‧‧‧Gate valve

190‧‧‧排氣部 190‧‧‧Exhaust

191‧‧‧真空壓力計 191‧‧‧Vacuum Pressure Gauge

FL‧‧‧閃光燈 FL‧‧‧Flash

HL‧‧‧鹵素燈 HL‧‧‧Halogen lamp

W‧‧‧半導體晶圓 W‧‧‧Semiconductor Wafer

Claims (5)

一種熱處理裝置，其特徵在於：其係藉由對基板照射光而加熱該基板者，且具備：腔室，其收容基板；光照射部，其對收容於上述腔室內之上述基板照射光；第1供給配管，其向上述腔室供給反應性氣體；第2供給配管，其向上述腔室供給惰性氣體；排氣配管，其對上述腔室內之氣體環境進行排氣；壓力計，其設置於上述第1供給配管；質量流量控制器，其設置於上述第1供給配管；閘閥，其設置於上述第1供給配管；及旁路配管，其連接上述第1供給配管及第2供給配管；且於上述第1供給配管中，自上游側依序設置上述閘閥、上述壓力計及上述質量流量控制器；上述旁路配管連接於上述第1供給配管之上述閘閥與上述壓力計之間；自上述排氣配管進行上述第1供給配管之排氣直至上述壓力計之測定值成為第1氣壓以下為止後，自上述第2供給配管經過上述旁路配管向上述第1供給配管供給惰性氣體直至上述壓力計之測定值成為高於上述第1氣壓之第2氣壓以上為止。 A heat treatment device is characterized in that it heats the substrate by irradiating the substrate with light, and is provided with: a chamber for accommodating the substrate; a light irradiation section for irradiating the substrate accommodated in the chamber with light; 1 supply pipe, which supplies reactive gas to the chamber; the second supply pipe, which supplies inert gas to the chamber; exhaust pipe, which exhausts the gas environment in the chamber; pressure gauge, which is installed in The first supply piping; a mass flow controller installed in the first supply piping; a gate valve installed in the first supply piping; and a bypass piping that connects the first supply piping and the second supply piping; and In the first supply pipe, the gate valve, the pressure gauge, and the mass flow controller are sequentially installed from the upstream side; the bypass pipe is connected between the gate valve and the pressure gauge of the first supply pipe; The exhaust pipe exhausts the first supply pipe until the measured value of the pressure gauge becomes below the first air pressure, and then supplies the inert gas from the second supply pipe through the bypass pipe to the first supply pipe until the pressure is reached. The measured value of the meter becomes more than the second atmospheric pressure higher than the above-mentioned first atmospheric pressure. 如請求項1之熱處理裝置，其中上述光照射部包含連續照明燈， 於自上述排氣配管進行排氣前，自上述連續照明燈進行光照射而將上述腔室內之氣體環境加熱。 The heat treatment device of claim 1, wherein the light irradiating part includes a continuous illuminating lamp, Before exhausting from the exhaust pipe, light is irradiated from the continuous illuminator to heat the gas environment in the chamber. 一種熱處理裝置之氣體環境取代方法，其特徵在於：其係藉由對基板照射光而加熱該基板之熱處理裝置之氣體環境取代方法，且於收容基板之腔室連接有供給反應性氣體之第1供給配管、供給惰性氣體之第2供給配管、及將上述腔室內之氣體環境進行排氣之排氣配管，上述第1供給配管及上述第2供給配管藉由旁路配管連接，於上述第1供給配管，自上游側依序設置有閘閥、壓力計及質量流量控制器，且上述旁路配管連接於上述第1供給配管之上述閘閥與上述壓力計之間；上述熱處理裝置之氣體環境取代方法包括：排氣步驟，其係自上述排氣配管進行上述第1供給配管之排氣直至上述壓力計之測定值成為第1氣壓以下為止；及供氣步驟，其係於上述排氣步驟之後，自上述第2供給配管經過上述旁路配管向上述第1供給配管供給惰性氣體直至上述壓力計之測定值成為高於上述第1氣壓之第2氣壓以上為止。 A method for replacing a gas atmosphere of a heat treatment device, which is characterized in that it is a method for replacing a gas environment of a heat treatment device that heats the substrate by irradiating light on the substrate, and a first chamber for accommodating the substrate is connected with a reactive gas supply. The supply piping, the second supply piping for supplying inert gas, and the exhaust piping for exhausting the gas environment in the chamber, the first supply piping and the second supply piping are connected by bypass piping, and are connected to the first The supply piping is provided with a gate valve, a pressure gauge and a mass flow controller in order from the upstream side, and the bypass piping is connected between the gate valve and the pressure gauge of the first supply piping; the gas atmosphere substitution method of the heat treatment device It includes: an exhaust step, which is performed from the exhaust pipe to exhaust the first supply pipe until the measured value of the pressure gauge becomes below the first air pressure; and an air supply step, which is after the exhaust step, The inert gas is supplied to the first supply pipe from the second supply pipe through the bypass pipe until the measured value of the pressure gauge becomes equal to or higher than the second air pressure higher than the first air pressure. 如請求項3之熱處理裝置之氣體環境取代方法，其係重複執行上述排氣步驟與上述供氣步驟。 For example, the gas environment substitution method of the heat treatment device of claim 3, which repeats the above-mentioned exhausting step and the above-mentioned gas supplying step. 如請求項3或4之熱處理裝置之氣體環境取代方法，其進而具備加熱 步驟，該加熱步驟係於上述排氣步驟之前，自連續照明燈進行光照射而將上述腔室內之氣體環境加熱。Such as the gas environment substitution method of the heat treatment device of claim 3 or 4, which is further equipped with heating Step, the heating step is before the exhaust step, light irradiation is performed from the continuous illuminator to heat the gas environment in the chamber.

Images