TWI736738B - Method for manufacturing light-emitting diode chip and light-emitting diode chip - Google Patents

Method for manufacturing light-emitting diode chip and light-emitting diode chip Download PDF

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TWI736738B
TWI736738B TW107104138A TW107104138A TWI736738B TW I736738 B TWI736738 B TW I736738B TW 107104138 A TW107104138 A TW 107104138A TW 107104138 A TW107104138 A TW 107104138A TW I736738 B TWI736738 B TW I736738B
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transparent substrate
wafer
transparent
light
emitting diode
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TW201841396A (en
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岡村卓
北村宏
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日商迪思科股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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Abstract

[課題]提供一種可得到充分的亮度的發光二極體晶片的製造方法及發光二極體晶片。 [解決手段]一種發光二極體晶片的製造方法，其特徵在於具備有：晶圓準備步驟，準備晶圓，該晶圓是在結晶成長用之透明基板上具有積層體層，並於該積層體層的正面以相互交叉之複數條分割預定線所區劃出之各區域中各自形成有LED電路，該積層體層形成有包含發光層的複數層半導體層；透明基板加工步驟，在涵蓋整個面形成有複數個貫通孔的第1透明基板或涵蓋整個面形成有複數個貫通孔的第2透明基板之至少其中任一個的正面或背面，對應於各LED電路來形成複數個凹陷；透明基板貼附步驟，在實施該透明基板加工步驟後，將該第1透明基板的正面貼附在晶圓的背面，並且將該第2透明基板的正面貼附在該第1透明基板的背面以形成一體化晶圓；及分割步驟，在實施該透明基板貼附步驟後，沿著該分割預定線將該晶圓和該第1及第2透明基板一起切斷以將該一體化晶圓分割成一個個的發光二極體晶片。[Problem] To provide a method for manufacturing a light-emitting diode wafer that can obtain sufficient brightness, and a light-emitting diode wafer. [Solution] A method for manufacturing a light-emitting diode wafer, characterized by comprising: a wafer preparation step, preparing a wafer, the wafer having a laminated body layer on a transparent substrate for crystal growth, and the laminated body layer LED circuits are formed in each area divided by a plurality of predetermined dividing lines that intersect each other on the front surface of the substrate. The laminated body layer is formed with a plurality of semiconductor layers including a light-emitting layer; the transparent substrate processing step is formed with a plurality of semiconductor layers covering the entire surface. The front or back of at least any one of the first transparent substrate with a through hole or the second transparent substrate with a plurality of through holes formed on the entire surface forms a plurality of recesses corresponding to each LED circuit; the transparent substrate attaching step, After the transparent substrate processing step is performed, the front surface of the first transparent substrate is attached to the back surface of the wafer, and the front surface of the second transparent substrate is attached to the back surface of the first transparent substrate to form an integrated wafer ; And a dividing step, after the transparent substrate attaching step is implemented, the wafer and the first and second transparent substrates are cut along the planned dividing line to divide the integrated wafer into individual light emitting Diode chip.

Description

發光二極體晶片的製造方法及發光二極體晶片Method for manufacturing light-emitting diode chip and light-emitting diode chip

發明領域 本發明是有關於一種發光二極體晶片的製造方法及發光二極體晶片。FIELD OF THE INVENTION The present invention relates to a method for manufacturing a light-emitting diode chip and a light-emitting diode chip.

發明背景 在藍寶石基板、GaN基板、SiC基板等的結晶成長用基板的正面上形成有將n型半導體層、發光層、p型半導體層積層複數層而成的積層體層，並且在此積層體層上藉由交叉的複數條分割預定線所區劃出的區域中形成有複數個LED(發光二極體(Light Emitting Diode))等之發光元件的晶圓，是沿著分割預定線切斷而分割成一個個的發光元件晶片，已分割的發光元件晶片可廣泛地應用在手機、個人電腦、照明機器等的各種電氣機器上。BACKGROUND OF THE INVENTION On the front surface of a substrate for crystal growth such as a sapphire substrate, a GaN substrate, and a SiC substrate, a laminate layer is formed by laminating a plurality of n-type semiconductor layers, a light-emitting layer, and a p-type semiconductor layer, and on this laminate layer A wafer in which a plurality of light-emitting elements such as LEDs (Light Emitting Diode) are formed in an area divided by a plurality of intersecting planned dividing lines is cut along the planned dividing line to be divided into One by one light-emitting element chips, the divided light-emitting element chips can be widely used in various electrical equipment such as mobile phones, personal computers, and lighting equipment.

由於從發光元件晶片的發光層射出的光具有各向同性，所以即使被照射到結晶成長用基板的內部也會使光從基板的背面及側面射出。然而，由於已被照射到基板之內部的光之中在與空氣層之間的界面上的入射角為臨界角以上的光會在界面上進行全反射而被封閉在基板內部，並不會有從基板射出到外部之情形，所以會有導致發光元件晶片的亮度降低的問題。Since the light emitted from the light-emitting layer of the light-emitting element wafer is isotropic, even if it is irradiated inside the substrate for crystal growth, the light is emitted from the back and side surfaces of the substrate. However, because of the light that has been irradiated inside the substrate, the light whose incident angle on the interface with the air layer is above the critical angle will be totally reflected at the interface and be enclosed inside the substrate. In the case where it is emitted from the substrate to the outside, there is a problem that the brightness of the light-emitting device chip is reduced.

為了解決此問題，在日本專利特開2014-175354號公報中已記載有下述之發光二極體(LED)：為了抑制從發光層射出的光被封閉在基板的內部，而形成為在基板的背面貼附透明構件來謀求亮度的提升。 先前技術文獻 專利文獻In order to solve this problem, Japanese Patent Laid-Open No. 2014-175354 has described the following light-emitting diode (LED): In order to prevent the light emitted from the light-emitting layer from being confined inside the substrate, it is formed on the substrate A transparent member is attached to the back of the device to improve the brightness. Prior Art Documents Patent Documents

專利文獻1：日本專利特開2014-175354號公報Patent Document 1: Japanese Patent Laid-Open No. 2014-175354

發明概要 發明欲解決之課題 然而，在專利文獻1所揭示的發光二極體中，雖然可藉由在基板的背面貼附透明構件而使亮度稍微提升，但是仍有無法得到充分的亮度的問題。SUMMARY OF THE INVENTION Problems to be solved by the invention. However, in the light-emitting diode disclosed in Patent Document 1, although the brightness can be slightly improved by attaching a transparent member to the back of the substrate, there is still a problem that sufficient brightness cannot be obtained. .

本發明是有鑒於像這樣的點而作成的發明，其目的在於提供一種能夠得到充分的亮度的發光二極體晶片的製造方法及發光二極體晶片。 用以解決課題之手段The present invention is an invention made in view of such points, and its object is to provide a method of manufacturing a light-emitting diode wafer and a light-emitting diode wafer capable of obtaining sufficient brightness. Means to solve the problem

依據請求項1記載的發明，可提供一種發光二極體晶片的製造方法，該發光二極體晶片的製造方法之特徵在於具備有： 晶圓準備步驟，準備晶圓，該晶圓是在結晶成長用之透明基板上具有積層體層，並於該積層體層的正面以相互交叉之複數條分割預定線所區劃出之各區域中各自形成有LED電路，該積層體層形成有包含發光層的複數層半導體層； 透明基板加工步驟，在涵蓋整個面形成有複數個貫通孔的第1透明基板或涵蓋整個面形成有複數個貫通孔的第2透明基板之至少其中任一個的正面或背面，對應於各LED電路來形成複數個凹陷； 透明基板貼附步驟，在實施該透明基板加工步驟後，將該第1透明基板的正面貼附在晶圓的背面，並且將該第2透明基板的正面貼附在該第1透明基板的背面以形成一體化晶圓；及 分割步驟，在實施該透明基板貼附步驟後，沿著該分割預定線將該晶圓和該第1及第2透明基板一起切斷以將該一體化晶圓分割成一個個的發光二極體晶片。According to the invention described in claim 1, it is possible to provide a method for manufacturing a light-emitting diode chip, the method for manufacturing a light-emitting diode chip is characterized by comprising: a wafer preparation step, preparing a wafer, the wafer being crystallized The transparent substrate for growth has a laminate layer, and on the front surface of the laminate layer, an LED circuit is formed in each area divided by a plurality of predetermined dividing lines that cross each other, and the laminate layer is formed with a plurality of layers including a light-emitting layer The semiconductor layer; the transparent substrate processing step, the front or back of at least one of the first transparent substrate with a plurality of through holes formed on the entire surface or the second transparent substrate with a plurality of through holes formed on the entire surface, corresponds to A plurality of recesses are formed for each LED circuit; a transparent substrate attaching step, after the transparent substrate processing step is performed, the front surface of the first transparent substrate is attached to the back surface of the wafer, and the front surface of the second transparent substrate is attached Attached to the back of the first transparent substrate to form an integrated wafer; and a dividing step, after the transparent substrate attaching step is performed, the wafer and the first and second transparent substrates are combined along the planned dividing line Cutting to divide the integrated wafer into individual light-emitting diode wafers.

較理想的是，在透明基板加工步驟中所形成之凹陷的截面形狀為三角形、四角形、或圓形的任一種。較理想的是，在透明基板加工步驟中所形成的凹陷是藉由蝕刻、噴砂、雷射的任一種方式而形成。Preferably, the cross-sectional shape of the depression formed in the processing step of the transparent substrate is any one of a triangle, a quadrangle, or a circle. Preferably, the recesses formed in the transparent substrate processing step are formed by any of etching, sandblasting, and laser.

較理想的是，該第1及第2透明基板是以透明陶瓷、光學玻璃、藍寶石、透明樹脂的任一種所形成，並且在該透明基板貼附步驟中第1透明基板是利用透明接著劑來貼附於晶圓，第2透明基板是利用透明接著劑來接著於第1透明基板。Preferably, the first and second transparent substrates are formed of any one of transparent ceramics, optical glass, sapphire, and transparent resin, and in the transparent substrate attaching step, the first transparent substrate is made of a transparent adhesive. Attached to the wafer, the second transparent substrate is adhered to the first transparent substrate with a transparent adhesive.

依據請求項5記載的發明，可提供一種發光二極體晶片，該發光二極體晶片具備於正面形成有LED電路的發光二極體、貼附在該發光二極體的背面之具有複數個貫通孔的第1透明構件、及貼附在該第1透明構件的背面之具有複數個貫通孔的第2透明構件，且在該第1透明構件或該第2透明構件之至少其中任一個的正面或背面形成有凹陷。 發明效果According to the invention described in claim 5, there can be provided a light-emitting diode chip provided with a light-emitting diode having an LED circuit formed on the front surface, and a plurality of light-emitting diode chips attached to the back surface of the light-emitting diode A first transparent member with a through hole, and a second transparent member with a plurality of through holes attached to the back of the first transparent member, and at least any one of the first transparent member or the second transparent member A depression is formed on the front or back. Invention effect

由於本發明的發光二極體晶片是在具有複數個貫通孔的第1透明構件或具有複數個貫通孔的第2透明構件之至少其中任一個的正面或背面形成有凹陷，所以除了會使第1透明構件或第2透明構件的表面積增大以外，還可藉由至少2層的透明構件與凹陷來使光複雜地折射而讓被封閉在第1及第2透明構件內的光減少，且讓從第1及第2透明構件射出之光的量增大並使發光二極體晶片的亮度提升。Since the light-emitting diode wafer of the present invention has recesses formed on the front or back surface of at least one of the first transparent member having a plurality of through holes or the second transparent member having a plurality of through holes, in addition to making the first transparent member 1 In addition to increasing the surface area of the transparent member or the second transparent member, at least two layers of transparent members and recesses can be used to complexly refract light and reduce the light enclosed in the first and second transparent members, and Increase the amount of light emitted from the first and second transparent members and increase the brightness of the light-emitting diode chip.

用以實施發明之形態 以下，參照圖式詳細地說明本發明的實施形態。參照圖1，所示為光元件晶圓(以下，有時會簡稱為晶圓)11的正面側立體圖。Modes for Carrying Out the Invention Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. 1, there is shown a front perspective view of an optical element wafer (hereinafter, sometimes simply referred to as a wafer) 11.

光元件晶圓11是在藍寶石基板13上積層氮化鎵(GaN)等的晶膜層(epitaxial layer)(積層體層)15而構成的。光元件晶圓11具有積層有晶膜層15的正面11a、及露出了藍寶石基板13的背面11b。The optical element wafer 11 is formed by laminating an epitaxial layer (layered body) 15 such as gallium nitride (GaN) on a sapphire substrate 13. The optical element wafer 11 has a front surface 11 a on which a crystal film layer 15 is laminated, and a back surface 11 b on which the sapphire substrate 13 is exposed.

在此，在本實施形態的光元件晶圓11中，雖然是採用藍寶石基板13作為結晶成長用基板，但是也可以採用GaN基板或SiC基板等來替代藍寶石基板13。Here, in the optical element wafer 11 of this embodiment, although the sapphire substrate 13 is used as a substrate for crystal growth, a GaN substrate, a SiC substrate, or the like may be used instead of the sapphire substrate 13.

積層體層(晶膜層)15是藉由依序使電子成為多數載子(carrier)的n型半導體層(例如n型GaN層)、成為發光層的半導體層(例如InGaN層)、電洞成為多數載子的p型半導體層(例如p型GaN層)進行晶膜生長而形成。The laminate layer (crystalline film layer) 15 is an n-type semiconductor layer (e.g., n-type GaN layer) that sequentially turns electrons into a majority carrier (carrier), a semiconductor layer that becomes a light-emitting layer (e.g., InGaN layer), and a plurality of holes. The carrier p-type semiconductor layer (for example, p-type GaN layer) is formed by crystal film growth.

藍寶石基板13具有例如100μm的厚度，且積層體層15具有例如5μm的厚度。於積層體層15上以形成為格子狀的複數條分割預定線17來區劃而形成有複數個LED電路19。晶圓11具有形成有LED電路19的正面11a、和露出了藍寶石基板13的背面11b。The sapphire substrate 13 has a thickness of, for example, 100 μm, and the laminate layer 15 has a thickness of, for example, 5 μm. The laminate layer 15 is divided by a plurality of planned dividing lines 17 formed in a grid shape to form a plurality of LED circuits 19. The wafer 11 has a front surface 11 a on which the LED circuit 19 is formed, and a back surface 11 b on which the sapphire substrate 13 is exposed.

依據本發明實施形態的發光二極體晶片的製造方法，首先會實施準備如圖1所示的光元件晶圓11的晶圓準備步驟。然後，實施透明基板加工步驟，該透明基板加工步驟是在要貼附於晶圓11的背面11b之涵蓋整個面形成有複數個貫通孔29的第1透明基板21的正面或背面、或者在要貼附於第1透明基板21的背面之涵蓋整個面形成有複數個貫通孔29A的第2透明基板21A的正面或背面，對應於LED電路19而形成複數個凹陷。According to the method for manufacturing a light-emitting diode wafer according to an embodiment of the present invention, first, a wafer preparation step of preparing the optical element wafer 11 as shown in FIG. 1 is performed. Then, a transparent substrate processing step is performed. The transparent substrate processing step is to be attached to the back surface 11b of the wafer 11 on the front surface or the back surface of the first transparent substrate 21 having a plurality of through holes 29 formed on the entire surface The front or back surface of the second transparent substrate 21A having a plurality of through holes 29A formed on the entire surface, which is attached to the back surface of the first transparent substrate 21, forms a plurality of recesses corresponding to the LED circuit 19.

在此透明基板加工步驟中，是例如圖2(A)所示，使用具有對應於晶圓11之LED電路19的複數個孔4的遮罩2。如圖2(B)所示，使遮罩2的孔4對應於晶圓11之各LED電路19來將遮罩貼附於涵蓋整個面形成有複數個貫通孔29之第1透明基板21的正面21a。In this transparent substrate processing step, for example, as shown in FIG. 2(A), a mask 2 having a plurality of holes 4 corresponding to the LED circuits 19 of the wafer 11 is used. As shown in FIG. 2(B), the hole 4 of the mask 2 corresponds to each LED circuit 19 of the wafer 11, and the mask is attached to the first transparent substrate 21 with a plurality of through holes 29 formed on the entire surface. Front 21a.

然後，藉由濕蝕刻(wet etching)或電漿蝕刻(plasma etching)在第1透明基板21的正面21a形成如圖2(C)所示，對應於遮罩2的孔4之形狀的三角形的凹陷(凹部)5。Then, a triangular shape corresponding to the shape of the hole 4 of the mask 2 is formed on the front surface 21a of the first transparent substrate 21 by wet etching or plasma etching as shown in FIG. 2(C). Depression (concave) 5.

亦可設成：藉由將遮罩2的孔4之形狀變更成四角形、或圓形，而在第1透明基板21的正面21a形成如圖2(D)所示的四角形的凹陷5A，或如圖2(E)所示的在第1透明基板21的正面21a形成圓形的凹陷5B。It can also be provided that by changing the shape of the hole 4 of the mask 2 to a quadrangular or circular shape, a quadrangular recess 5A is formed on the front surface 21a of the first transparent substrate 21 as shown in FIG. 2(D), or A circular recess 5B is formed on the front surface 21a of the first transparent substrate 21 as shown in FIG. 2(E).

第1透明基板21是由透明樹脂、光學玻璃、藍寶石、透明陶瓷的任一種所形成。在本實施形態中，是由比光學玻璃更有耐久性之聚碳酸酯、丙烯酸等之透明樹脂來形成第1透明基板21。The first transparent substrate 21 is formed of any one of transparent resin, optical glass, sapphire, and transparent ceramic. In this embodiment, the first transparent substrate 21 is formed of transparent resin such as polycarbonate or acrylic, which is more durable than optical glass.

作為本實施形態的變形例，亦可設成：藉由將遮罩2貼附在第1透明基板21的正面21a之後，實施噴砂加工，而在第1透明基板21的正面21a形成如圖2(C)所示的三角形的凹陷5、或如圖2(D)所示的四角形的凹陷5A、或如圖2(E)所示的圓形的凹陷5B。As a modified example of this embodiment, it can also be provided that the mask 2 is attached to the front surface 21a of the first transparent substrate 21 and then sandblasted to form the front surface 21a of the first transparent substrate 21 as shown in FIG. 2. The triangular recess 5 shown in (C), or the quadrangular recess 5A as shown in FIG. 2(D), or the circular recess 5B as shown in FIG. 2(E).

亦可設成將雷射加工裝置利用於：在第1透明基板21的正面21a形成對應於LED電路19的複數個凹陷上。在藉由雷射加工進行之實施形態中，如圖3(A)所示，是一邊將對第1透明基板21具有吸收性之波長(例如266nm)的雷射光束間歇性地從聚光器(雷射頭)24照射到第1透明基板21的正面21a，一邊使已保持有第1透明基板21之圖未示的工作夾台朝箭頭X1方向加工進給，藉此以燒蝕(ablation)在第1透明基板21的正面21a形成對應於晶圓11之LED電路19的複數個凹陷9。The laser processing device may also be used to form a plurality of recesses corresponding to the LED circuit 19 on the front surface 21 a of the first transparent substrate 21. In the embodiment performed by laser processing, as shown in FIG. 3(A), a laser beam with a wavelength (for example, 266 nm) that is absorbing to the first transparent substrate 21 is intermittently removed from the condenser. (Laser head) 24 is irradiated to the front surface 21a of the first transparent substrate 21, while the work chuck, not shown in the figure, holding the first transparent substrate 21 is processed and fed in the direction of arrow X1, thereby ablation (ablation) ) A plurality of recesses 9 corresponding to the LED circuits 19 of the wafer 11 are formed on the front surface 21a of the first transparent substrate 21.

將第1透明基板21朝與箭頭X1方向正交的方向按晶圓11的分割預定線17的每個間距來分度進給，並且對第1透明基板21的正面21a進行燒蝕加工，以逐次地形成複數個凹陷9。凹陷9的截面形狀，通常是成為與雷射光束之光斑形狀相對應之如圖3(B)所示的圓形。The first transparent substrate 21 is indexed and fed for each pitch of the planned dividing line 17 of the wafer 11 in the direction orthogonal to the arrow X1 direction, and the front surface 21a of the first transparent substrate 21 is ablated to A plurality of depressions 9 are successively formed. The cross-sectional shape of the recess 9 is usually a circle as shown in FIG. 3(B) corresponding to the spot shape of the laser beam.

雖然在上述之透明基板加工步驟中，是在第1透明基板21的正面21a形成有複數個凹陷5、5A、5B、9，但亦可取代此實施形態，而設成為在第1透明基板21的背面21b形成複數個凹陷5、5A、5B、9。Although in the above-mentioned transparent substrate processing step, a plurality of depressions 5, 5A, 5B, 9 are formed on the front surface 21a of the first transparent substrate 21, it is also possible to replace this embodiment and set it on the first transparent substrate 21. A plurality of depressions 5, 5A, 5B, and 9 are formed on the back 21b of the device.

或者，亦可設成對第1透明基板21的正面及背面不施行任何加工，而是在涵蓋整個面形成有複數個貫通孔29A之第2透明基板21A的正面21a或背面21b對應於晶圓11之各LED電路來形成複數個凹陷5、5A、5B、9。第2透明基板21A也是與第1透明基板21同樣，由透明樹脂、光學玻璃、藍寶石、透明陶瓷的任一種所形成。Alternatively, it may be provided that no processing is performed on the front and back surfaces of the first transparent substrate 21, but the front surface 21a or the back surface 21b of the second transparent substrate 21A with a plurality of through holes 29A formed on the entire surface corresponds to the wafer Each LED circuit of 11 forms a plurality of recesses 5, 5A, 5B, and 9. The second transparent substrate 21A is also formed of any one of transparent resin, optical glass, sapphire, and transparent ceramics, similarly to the first transparent substrate 21.

已實施透明基板加工步驟之後，實施透明基板貼附步驟，該透明基板貼附步驟是將第1透明基板21的正面21a貼附到晶圓11的背面11b，並且將第2透明基板21A的正面21a貼附到第1透明基板21的背面21b。After the transparent substrate processing step has been performed, a transparent substrate attaching step is performed. The transparent substrate attaching step is to attach the front surface 21a of the first transparent substrate 21 to the back surface 11b of the wafer 11, and attach the front surface of the second transparent substrate 21A 21a is attached to the back surface 21b of the first transparent substrate 21.

在此透明基板貼附步驟中，首先，是如圖4(A)所示，藉由透明接著劑將晶圓11的背面11b接著於已在正面21a對應於晶圓11的LED電路19而形成有複數個凹陷9之第1透明基板21的正面21a，以如圖4(B)所示，將晶圓11與第1透明基板21一體化而形成第1一體化晶圓25。In this transparent substrate attaching step, first, as shown in FIG. 4(A), the back surface 11b of the wafer 11 is bonded to the LED circuit 19 corresponding to the wafer 11 on the front surface 21a by a transparent adhesive. On the front surface 21a of the first transparent substrate 21 having a plurality of recesses 9, as shown in FIG. 4(B), the wafer 11 and the first transparent substrate 21 are integrated to form the first integrated wafer 25.

接著，如圖5(A)所示，將第2透明基板21A的正面21a貼附到第1一體化晶圓25的第1透明基板21的背面21b，以形成如圖5(B)所示的第2一體化晶圓25A。Next, as shown in FIG. 5(A), the front surface 21a of the second transparent substrate 21A is attached to the back surface 21b of the first transparent substrate 21 of the first integrated wafer 25 to form as shown in FIG. 5(B) The second integrated wafer 25A.

此透明基板貼附步驟並非限定於上述之順序的步驟，亦可設成：於將第2透明基板21A的正面21a貼附在第1透明基板21的背面21b後，再將第1透明基板21的正面21a貼附到晶圓11的背面11b來形成第2一體化晶圓25A。This transparent substrate attaching step is not limited to the above-mentioned sequence of steps. It can also be set as follows: after attaching the front surface 21a of the second transparent substrate 21A to the back surface 21b of the first transparent substrate 21, the first transparent substrate 21 The front surface 21a of the wafer 11 is attached to the back surface 11b of the wafer 11 to form the second integrated wafer 25A.

已實施透明基板貼附步驟後，實施支撐步驟，該支撐步驟是如圖6所示，將第2一體化晶圓25A的第2透明基板21A貼附到外周部已貼附於環狀框架F上之切割膠帶T來形成框架單元，並透過切割膠帶T以環狀框架F支撐第2一體化晶圓25A。After the transparent substrate attaching step has been performed, the supporting step is performed. As shown in FIG. 6, the supporting step is to attach the second transparent substrate 21A of the second integrated wafer 25A to the outer periphery and attach it to the ring frame F. The upper dicing tape T forms a frame unit, and the second integrated wafer 25A is supported by the ring frame F through the dicing tape T.

已實施支撐步驟之後，實施分割步驟，該分割步驟是將框架單元投入切削裝置，並且利用切削裝置來將第2一體化晶圓25切削以分割成一個個的發光二極體晶片。參照圖7來說明此分割步驟。After the supporting step has been carried out, the dividing step is carried out. In this dividing step, the frame unit is put into the cutting device, and the second integrated wafer 25 is cut by the cutting device to be divided into individual light-emitting diode wafers. This division step will be explained with reference to FIG. 7.

如圖7所示，切削裝置的切削單元10包含有主軸殼體12、可旋轉地***主軸殼體12中的圖未示的主軸、和裝設在主軸的前端的切削刀14。As shown in FIG. 7, the cutting unit 10 of the cutting device includes a spindle housing 12, a spindle (not shown) rotatably inserted into the spindle housing 12, and a cutting tool 14 installed at the front end of the spindle.

切削刀14的切割刃是以例如用鍍鎳方式來將鑽石磨粒固定而成的電鑄磨石所形成，且其前端形狀是做成三角形、四角形、或半圓形。The cutting edge of the cutting blade 14 is formed of an electroformed grindstone obtained by fixing diamond abrasive grains, for example, by nickel plating, and the shape of its tip is triangular, quadrangular, or semicircular.

切削刀14的大致上半部分是被刀片罩(blade cover)(輪罩(wheel cover))16所覆蓋，在刀片罩16上配設有於切削刀14的裏側及近前側水平地伸長的一對(圖中僅顯示1支)冷卻噴嘴18。Roughly the upper half of the cutting blade 14 is covered by a blade cover (wheel cover) 16. The blade cover 16 is provided with a horizontally elongated inner side and a near front side of the cutting blade 14 Yes (only one is shown in the figure) cooling nozzle 18.

在分割步驟中，是隔著框架單元的切割膠帶T而在切削裝置的工作夾台20上吸引保持第2一體化晶圓25A，且是將環狀框架F以圖未示的夾具夾持來固定。In the dividing step, the second integrated wafer 25A is sucked and held on the work chuck table 20 of the cutting device via the dicing tape T of the frame unit, and the ring frame F is clamped by a jig not shown. fixed.

然後，使切削刀14一邊朝箭頭R方向高速旋轉一邊切入晶圓11的分割預定線17直到切削刀14的前端到達切割膠帶T為止，並且一邊從冷卻噴嘴18朝向切削刀14及晶圓11的加工點供給切削液一邊將第2一體化晶圓25A朝箭頭X1方向加工進給，藉此形成沿著晶圓11的分割預定線17切斷晶圓11以及第1及第2透明基板21、21A的切斷溝27。Then, the cutting blade 14 is rotated at a high speed in the direction of arrow R while cutting into the planned dividing line 17 of the wafer 11 until the tip of the cutting blade 14 reaches the dicing tape T, and from the cooling nozzle 18 toward the cutting blade 14 and the wafer 11 While supplying cutting fluid at the processing point, the second integrated wafer 25A is processed and fed in the direction of arrow X1, thereby forming the cut wafer 11 and the first and second transparent substrates 21 along the planned dividing line 17 of the wafer 11. 21A of the cut groove 27.

將切削單元10在Y軸方向上分度進給，並且沿著朝第1方向伸長的分割預定線17逐次地形成同樣的切斷溝27。其次，將工作夾台20旋轉90°之後，沿著於與第1方向正交的第2方向上伸長之全部的分割預定線17形成同樣的切斷溝27，以形成圖8所示之狀態，藉此將第2一體化晶圓25A分割成如圖9所示的發光二極體晶片31。The cutting unit 10 is indexed and fed in the Y-axis direction, and the same cutting grooves 27 are successively formed along the planned dividing line 17 elongated in the first direction. Next, after rotating the work chuck table 20 by 90°, the same cutting grooves 27 are formed along all the planned dividing lines 17 elongated in the second direction orthogonal to the first direction to form the state shown in FIG. 8 As a result, the second integrated wafer 25A is divided into light-emitting diode wafers 31 as shown in FIG. 9.

在上述之實施形態中，雖然在將第2一體化晶圓25A分割成一個個的發光二極體晶片31上是使用切削裝置，但是亦可設成：將對晶圓11及透明基板21、21A具有穿透性之波長的雷射光束沿著分割預定線13朝晶圓11照射，並且在晶圓11以及透明基板21、21A的內部於厚度方向上形成複數層的改質層，接著，對第2一體化晶圓25A賦與外力，來以改質層為分割起點將第2一體化晶圓25A分割成一個個的發光二極體晶片31。In the above-mentioned embodiment, although the cutting device is used for the light-emitting diode wafer 31 that divides the second integrated wafer 25A into individual light-emitting diode wafers, it may also be provided that the wafer 11, the transparent substrate 21, The laser beam of 21A having a penetrating wavelength is irradiated toward the wafer 11 along the planned dividing line 13, and a plurality of modified layers are formed in the thickness direction inside the wafer 11 and the transparent substrates 21, 21A, and then, An external force is applied to the second integrated wafer 25A, and the second integrated wafer 25A is divided into individual light-emitting diode wafers 31 using the modified layer as a starting point of division.

圖9所示的發光二極體晶片31是在正面具有LED電路19之LED13A的背面貼附有第1透明構件21’，且該第1透明構件21’具有複數個貫通孔。又，在第1透明構件21’的正面形成有凹陷5、5A、5B或凹陷9。此外，在第1透明構件21’的背面貼附有第2透明構件21A’，且該第2透明構件21A’具有複數個貫通孔。The light-emitting diode chip 31 shown in FIG. 9 has a first transparent member 21' attached to the back of an LED 13A having an LED circuit 19 on the front, and the first transparent member 21' has a plurality of through holes. In addition, recesses 5, 5A, 5B or recesses 9 are formed on the front surface of the first transparent member 21'. In addition, a second transparent member 21A' is attached to the back surface of the first transparent member 21', and the second transparent member 21A' has a plurality of through holes.

因此，在圖9所示之發光二極體晶片31上，由於在第1透明構件21’的正面形成有凹陷，所以會使第1透明構件21’的表面積增大。此外，從發光二極體晶片31的LED電路19射出並朝第1透明構件21’入射之光的一部分是在凹陷部分進行折射後進入第1透明構件21’內。Therefore, in the light-emitting diode wafer 31 shown in FIG. 9, the surface area of the first transparent member 21' is increased because a depression is formed on the front surface of the first transparent member 21'. In addition, a part of the light emitted from the LED circuit 19 of the light emitting diode chip 31 and incident on the first transparent member 21' enters the first transparent member 21' after being refracted in the recessed portion.

從而，在光從第1透明構件21’及第2透明構件21A’朝外部折射而射出之時，在第1及第2透明構件21’、21A’與空氣層之間的界面上之入射角成為臨界角以上之光的比例會減少，而使從第1、第2透明構件21’、21A’射出之光的量增大，並使發光二極體晶片31的亮度提升。Therefore, when light is refracted and emitted from the first transparent member 21' and the second transparent member 21A' toward the outside, the incident angle on the interface between the first and second transparent members 21', 21A' and the air layer is The proportion of light above the critical angle will decrease, and the amount of light emitted from the first and second transparent members 21', 21A' will increase, and the brightness of the light-emitting diode chip 31 will be improved.

2‧‧‧遮罩4‧‧‧孔5、5A、5B、9‧‧‧凹陷10‧‧‧切削單元11‧‧‧光元件晶圓(晶圓)11a、21a‧‧‧正面11b、21b‧‧‧背面12‧‧‧主軸殼體13‧‧‧藍寶石基板13A‧‧‧LED14‧‧‧切削刀15‧‧‧積層體層16‧‧‧刀片罩17‧‧‧分割預定線18‧‧‧冷卻噴嘴19‧‧‧LED電路20‧‧‧工作夾台21‧‧‧第1透明基板21A‧‧‧第2透明基板21’‧‧‧第1透明構件21A’‧‧‧第2透明構件24‧‧‧聚光器(雷射頭)25‧‧‧第1一體化晶圓25A‧‧‧第2一體化晶圓27‧‧‧切斷溝29、29A‧‧‧貫通孔31‧‧‧發光二極體晶片R、X1‧‧‧箭頭T‧‧‧切割膠帶F‧‧‧環狀框架X、Y、Z‧‧‧方向2‧‧‧Mask 4‧‧‧Hole 5, 5A, 5B, 9‧‧‧Recess 10‧‧‧Cutting unit 11‧‧‧Optical element wafer (wafer) 11a, 21a‧‧‧Front 11b, 21b ‧‧‧Back 12‧‧‧Spindle shell 13‧‧‧Sapphire substrate 13A‧‧‧LED14‧‧‧Cutting knife 15‧‧‧Laminated body layer 16‧‧‧Blade cover 17‧‧‧Preparation line 18‧‧‧ Cooling nozzle 19‧‧‧LED circuit 20‧‧‧Working clamp 21‧‧‧First transparent substrate 21A‧‧‧Second transparent substrate 21'‧‧‧First transparent member 21A'‧‧‧Second transparent member 24 ‧‧‧Concentrator (laser head) 25‧‧‧First integrated wafer 25A‧‧‧Second integrated wafer 27‧‧‧Cut groove 29, 29A‧‧‧Through hole 31‧‧‧ LED chip R, X1‧‧‧Arrow T‧‧‧Dicing tape F‧‧‧Ring frame X,Y,Z‧‧‧direction

圖1是光元件晶圓的正面側立體圖。 圖2(A)是顯示將具有對應於光元件晶圓的各LED電路之複數個孔的遮罩貼附到第1透明基板之正面的情形的立體圖，圖2(B)是已將遮罩貼附在第1透明基板之正面的狀態之立體圖，圖2(C)~圖2(E)是顯示形成在第1透明基板之正面的凹陷之形狀的局部立體圖。 圖3(A)是顯示藉由雷射光束的照射而在第1透明基板之正面形成對應於光元件晶圓之各LED電路的複數個凹陷的情形之立體圖，圖3(B)是顯示凹陷之形狀的局部立體圖。 圖4(A)是顯示將於正面具有複數個凹陷之第1透明基板貼附到晶圓之背面而形成一體化之第1一體化步驟的立體圖，圖4(B)是第1一體化晶圓的立體圖。 圖5(A)是顯示將第2透明基板的正面貼附到第1一體化晶圓之第1透明基板的背面而進行一體化之第2一體化步驟的立體圖，圖5(B)是第2一體化晶圓的立體圖。 圖6是顯示透過切割膠帶而以環狀框架支撐第2一體化晶圓的支撐步驟的立體圖。 圖7是顯示將第2一體化晶圓分割成發光二極體晶片的分割步驟的立體圖。 圖8是分割步驟結束後之第2一體化晶圓的立體圖。 圖9是本發明實施形態之發光二極體晶片的立體圖。Fig. 1 is a front perspective view of an optical element wafer. Fig. 2(A) is a perspective view showing a situation in which a mask having a plurality of holes corresponding to each LED circuit of the light element wafer is attached to the front surface of the first transparent substrate, and Fig. 2(B) is the mask having been attached A perspective view of the state of being attached to the front surface of the first transparent substrate. FIGS. 2(C) to 2(E) are partial perspective views showing the shape of the recess formed on the front surface of the first transparent substrate. Fig. 3(A) is a perspective view showing a situation where a plurality of recesses corresponding to each LED circuit of the optical element wafer are formed on the front surface of the first transparent substrate by the irradiation of a laser beam, and Fig. 3(B) is a view showing the recesses A partial three-dimensional view of the shape. 4(A) is a perspective view showing the first integration step of attaching a first transparent substrate with a plurality of recesses on the front surface to the back of the wafer to form an integration, and FIG. 4(B) is a first integration step Perspective view of the circle. 5(A) is a perspective view showing the second integration step of attaching the front surface of the second transparent substrate to the back surface of the first transparent substrate of the first integrated wafer to perform integration, and FIG. 5(B) is the first integration step 2 Three-dimensional view of the integrated wafer. 6 is a perspective view showing a supporting step of supporting a second integrated wafer with a ring frame through a dicing tape. FIG. 7 is a perspective view showing a dividing step of dividing a second integrated wafer into light-emitting diode chips. Fig. 8 is a perspective view of the second integrated wafer after the dividing step is completed. Fig. 9 is a perspective view of a light emitting diode chip according to an embodiment of the present invention.

13A‧‧‧LED 13A‧‧‧LED

19‧‧‧LED電路 19‧‧‧LED circuit

21’‧‧‧第1透明構件 21’‧‧‧The first transparent member

21A’‧‧‧第2透明構件 21A’‧‧‧Second transparent member

31‧‧‧發光二極體晶片 31‧‧‧Light Emitting Diode Chip

Claims (4)

一種發光二極體晶片的製造方法，該發光二極體晶片的製造方法之特徵在於具備有：晶圓準備步驟，準備晶圓，該晶圓是在結晶成長用之透明基板上具有積層體層，並於該積層體層的正面以相互交叉之複數條分割預定線所區劃出之各區域中各自形成有LED電路，該積層體層形成有包含發光層的複數層半導體層；透明基板加工步驟，在涵蓋整個面形成有複數個貫通孔的第1透明基板或涵蓋整個面形成有複數個貫通孔的第2透明基板之至少其中任一個的正面或背面，對應於各LED電路來形成複數個凹陷；透明基板貼附步驟，在實施該透明基板加工步驟後，將該第1透明基板的正面貼附在晶圓的背面，並且將該第2透明基板的正面貼附在該第1透明基板的背面以形成一體化晶圓；及分割步驟，在實施該透明基板貼附步驟後，沿著該分割預定線將該晶圓和該第1及第2透明基板一起切斷以將該一體化晶圓分割成一個個的發光二極體晶片，在該透明基板加工步驟中，前述凹陷是藉由蝕刻、噴砂、雷射的任一種方式而形成。 A method for manufacturing a light-emitting diode wafer, the method for manufacturing the light-emitting diode wafer is characterized by comprising: a wafer preparation step, preparing a wafer, the wafer having a laminated body layer on a transparent substrate for crystal growth, And on the front side of the laminate layer, LED circuits are formed in each area divided by a plurality of predetermined dividing lines that intersect each other, and the laminate layer is formed with a plurality of semiconductor layers including a light-emitting layer; the transparent substrate processing step covers The front or back surface of at least one of the first transparent substrate with a plurality of through holes formed on the entire surface or the second transparent substrate with a plurality of through holes formed on the entire surface has a plurality of recesses corresponding to each LED circuit; transparent; In the substrate attaching step, after the transparent substrate processing step is performed, the front surface of the first transparent substrate is attached to the back surface of the wafer, and the front surface of the second transparent substrate is attached to the back surface of the first transparent substrate. Forming an integrated wafer; and a dividing step, after the transparent substrate attaching step is performed, the wafer and the first and second transparent substrates are cut along the planned dividing line to divide the integrated wafer In the transparent substrate processing step, the aforementioned recesses are formed by etching, sandblasting, and laser. 如請求項1之發光二極體晶片的製造方法，其中在該透明基板加工步驟中所形成之前述凹陷的截面形狀為三角形、四角形、圓形的任一種。 The method for manufacturing a light-emitting diode wafer according to claim 1, wherein the cross-sectional shape of the recess formed in the transparent substrate processing step is any of a triangle, a quadrangle, and a circle. 如請求項1之發光二極體晶片的製造方法，其中該第1及第2透明基板是以透明陶瓷、光學玻璃、藍寶石、透明樹脂的任一種所形成，並且在該透明基板貼附步驟中該第1透明基板是使用透明接著劑來貼附於該晶圓的背面，該第2透明基板是使用透明接著劑來貼附於該第1透明基板的背面。 The method of manufacturing a light-emitting diode wafer of claim 1, wherein the first and second transparent substrates are formed of any one of transparent ceramics, optical glass, sapphire, and transparent resin, and in the step of attaching the transparent substrate The first transparent substrate is attached to the back surface of the wafer using a transparent adhesive, and the second transparent substrate is attached to the back surface of the first transparent substrate using a transparent adhesive. 一種發光二極體晶片，具備：於正面形成有LED電路的發光二極體；貼附在該發光二極體的背面之具有複數個貫通孔的第1透明構件；及貼附在該第1透明構件的背面之具有複數個貫通孔的第2透明構件，且在該第1透明構件或該第2透明構件之至少其中任一個的正面或背面形成有凹陷，前述凹陷是藉由蝕刻、噴砂、雷射的任一種方式而形成。 A light-emitting diode chip, comprising: a light-emitting diode with an LED circuit formed on the front side; a first transparent member having a plurality of through holes attached to the back of the light-emitting diode; and a first transparent member attached to the first A second transparent member having a plurality of through holes on the back of the transparent member, and a depression is formed on the front or back of at least any one of the first transparent member or the second transparent member, and the depression is formed by etching or sandblasting. , Formed by any method of laser.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009305A (en) * 2009-06-23 2011-01-13 Koito Mfg Co Ltd Light-emitting module
JP2012195404A (en) * 2011-03-16 2012-10-11 Toshiba Lighting & Technology Corp Light-emitting device and luminaire
JP2016076685A (en) * 2014-10-08 2016-05-12 株式会社東芝 Semiconductor light-emitting device and manufacturing method thereof

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4122739B2 (en) * 2001-07-26 2008-07-23 松下電工株式会社 Light emitting device and manufacturing method thereof
JP4232585B2 (en) * 2003-09-17 2009-03-04 豊田合成株式会社 Light emitting device
US7560294B2 (en) * 2004-06-07 2009-07-14 Toyoda Gosei Co., Ltd. Light emitting element and method of making same
JP2006278751A (en) * 2005-03-29 2006-10-12 Mitsubishi Cable Ind Ltd Garium nitride-based semiconductor light emitting element
KR20070000952A (en) * 2005-06-27 2007-01-03 주식회사 엘지화학 Method for preparing light emitting diode device having heat dissipation rate enhancement
JP2012038889A (en) * 2010-08-06 2012-02-23 Koito Mfg Co Ltd Fluorescent member and light-emitting module
KR101726807B1 (en) * 2010-11-01 2017-04-14 삼성전자주식회사 Light Emitting Device
CN104160520A (en) * 2012-02-01 2014-11-19 松下电器产业株式会社 Semiconductor light-emitting element, method for manufacturing same, and light source device
JP5941306B2 (en) * 2012-03-19 2016-06-29 スタンレー電気株式会社 Light emitting device and manufacturing method thereof
JP2014175354A (en) 2013-03-06 2014-09-22 Disco Abrasive Syst Ltd Light-emitting diode
JP2014175362A (en) * 2013-03-06 2014-09-22 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same
EP2997606B1 (en) * 2013-05-15 2016-07-13 Koninklijke Philips N.V. Led with scattering features in substrate
JP2014239123A (en) * 2013-06-06 2014-12-18 株式会社ディスコ Processing method
JP2015018953A (en) * 2013-07-11 2015-01-29 株式会社ディスコ Light emitting chip
KR20150047844A (en) * 2013-10-25 2015-05-06 주식회사 세미콘라이트 Semiconductor light emitting diode
JP6255235B2 (en) * 2013-12-20 2017-12-27 株式会社ディスコ Light emitting chip
WO2015099084A1 (en) * 2013-12-26 2015-07-02 信越石英株式会社 Silica glass member for wavelength conversion, and production method therefor
JP6255255B2 (en) * 2014-01-27 2017-12-27 株式会社ディスコ Optical device processing method
JP2015192100A (en) * 2014-03-28 2015-11-02 豊田合成株式会社 Light-emitting element and method of manufacturing light-emitting element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011009305A (en) * 2009-06-23 2011-01-13 Koito Mfg Co Ltd Light-emitting module
JP2012195404A (en) * 2011-03-16 2012-10-11 Toshiba Lighting & Technology Corp Light-emitting device and luminaire
JP2016076685A (en) * 2014-10-08 2016-05-12 株式会社東芝 Semiconductor light-emitting device and manufacturing method thereof

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