TWI735599B - 曝露面積增大石英玻璃構材及其製造方法以及多層外周刀刃 - Google Patents
曝露面積增大石英玻璃構材及其製造方法以及多層外周刀刃 Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 98
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
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- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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Abstract
提供一種曝露面積增大石英玻璃構材、其製造方法及使用於該方法的多層外周刀刃,使對於成膜處理氣體的曝露面積比表面為平坦者增大,同時以對於表面的吸附量成為一定的方式控制增大曝露面積。
作成一種曝露面積增大石英玻璃構材,在半導體基板的成膜處理中,與被成膜處理的前述半導體基板一起載置於反應室內,為曝露於成膜處理氣體的成膜處理氣體曝露用的石英玻璃構材,具有石英玻璃構材主體、形成於前述石英玻璃構材主體的表面的複數個凹凸部,對於成膜處理氣體的曝露面積被控制而增大。
Description
本發明,係有關一種曝露面積增大石英玻璃構材,該曝露面積增大石英玻璃構材係在半導體基板的成膜處理時,與被成膜處理的前述半導體基板一起載置於反應室內的曝露用石英玻璃構材,使對於成膜處理氣體的曝露面積比表面為平坦者增大,同時以對於表面的吸附量成為一定的方式控制增大曝露面積;並且,有關於該曝露面積增大石英玻璃構材之製造方法及使用於該方法的多層外周刀刃。
歷來,於半導體裝置的製程中,對於矽晶圓等的半導體基板,進行例如CVD(Chemical Vapor Deposition)等的各種的成膜處理。在該成膜處理時,係例如將半導體基板載置於稱為晶舟或基座的晶圓保持治具而
往反應室搬入,進行成膜處理。
如此之使用晶圓保持治具下的成膜處理中,係有時以屬不與處理氣體反應的材質的石英玻璃作成晶舟,於該晶舟載置半導體基板,與以屬不與處理氣體反應的材質的石英玻璃而製作的構材一起將前述半導體基板收容於反應室,進行成膜處理。如此的成膜方法之例示於專利文獻1。
該技術,雖係一般而言以減低朝晶圓的氣體的流動的變異性為目的之構材,惟在成膜處理中係膜與半導體基板同樣地累積附著,由於剝離所致的異物的產生、由於膜的膨脹差所致的破損等造成問題,正尋找各種的辦法。
然而,被成膜處理的半導體基板,係由於處理而在表面形成凹凸,與表面平坦的半導體基板相較下表面積增大,故要使對於半導體基板的成膜變均勻係亦需要使在反應室內曝露於成膜處理氣體的石英玻璃構材其表面積增大,配合半導體基板的表面的凹凸而控制成膜處理氣體的吸附量。
再者,隨著因成膜所得的膜厚越加薄膜化,在石英玻璃構材方面係比起減低氣體的流動的變異性,透過成膜氣體的吸附量的控制而達成的對於均勻的半導體基板的均勻的成膜成為課題,使該石英玻璃構材的成膜處理氣體曝露面積增大,且精密地控制成膜處理氣體的吸附時,極難以作成精度佳且生產效率佳地使該表面積增大的
石英玻璃構材。
[專利文獻1]日本專利特開平7-99157
本發明,係鑑於上述之先前技術的問題點而創作者,目的在於提供一種曝露面積增大石英玻璃構材、其製造方法及使用於該方法的多層外周刀刃,使對於成膜處理氣體的曝露面積比表面為平坦者增大,同時以對於表面的吸附量成為一定的方式控制增大曝露面積。
本發明的曝露面積增大石英玻璃構材,係在半導體基板的成膜處理中,與被成膜處理的前述半導體基板一起載置於反應室內,為曝露於成膜處理氣體的成膜處理氣體曝露用的石英玻璃構材,具有石英玻璃構材主體、形成於前述石英玻璃構材主體的表面的複數個凹凸部,對於成膜處理氣體的曝露面積被控制而增大。前述曝露面積的控制,係以成膜處理氣體的對於曝露面表面的吸附量成為一定的方式進行控制為適。
前述被控制而增大的複數個凹凸部為溝形
狀,該溝的溝寬與溝深的變異性的範圍各在±20%以內為適。
本發明的曝露面積增大石英玻璃構材的製造方法,係前述曝露面積增大石英玻璃構材的製造方法,透過利用多層外周刀刃而對前述石英玻璃構材主體的表面同時進行複數個溝加工,從而形成複數個凹凸部。
優選上前述透過溝加工而獲得的曝露面積增大石英玻璃構材的已進行溝加工的一面的表面積,與進行前述溝加工前的前述曝露面積增大石英玻璃構材的前述單面的表面積相較下為3倍以上。
本發明的多層外周刀刃,係供於進行在前述曝露面積增大石英玻璃構材的製造方法中的溝加工用的多層外周刀刃,具有單一的圓盤狀基體金屬部、形成於前述圓盤狀基體金屬部的外周部的鑽石磨粒層基部、複數個刃從前述鑽石磨粒層基部突出而一體地設置而成的鑽石磨粒刃部。
優選上前述鑽石磨粒刃部的各刃的刃厚與刃長的比為1:5以上。
優選上前述鑽石磨粒層基部具有前述鑽石磨粒刃部的各刃的刃長的2倍以上的厚度。
優選上在前述複數個刃與刃之間的前述鑽石磨粒層基部的表面形成圓弧狀的凹陷。
依本發明時,可提供一種曝露面積增大石英玻璃構材、其製造方法及使用於該方法的多層外周刀刃,發揮如下的顯著的效果:使對於成膜處理氣體的曝露面積比表面為平坦者增大,同時以對於表面的吸附量成為一定的方式控制增大曝露面積。
10、10A~10D‧‧‧曝露面積增大石英玻璃構材
12‧‧‧反應室
14‧‧‧石英玻璃構材主體
16‧‧‧凹凸部
18‧‧‧溝
20‧‧‧溝加工後的表面
22‧‧‧溝加工前的表面
24a、24b‧‧‧內側面
26‧‧‧本發明的多層外周刀刃
28‧‧‧圓盤狀基體金屬部
30‧‧‧外周部
32‧‧‧鑽石磨粒層基部
34‧‧‧刃
36‧‧‧鑽石磨粒刃部
38‧‧‧插穿孔
40‧‧‧圓弧狀的凹陷
42‧‧‧縱型熱處理爐
44‧‧‧氣體導入管
46‧‧‧加熱器
48‧‧‧排氣管
50‧‧‧晶舟
51‧‧‧基座
52‧‧‧中空部
100‧‧‧歷來的多層外周刀刃
102a、102b、102c、102d、102e‧‧‧單一外周刀刃
104‧‧‧間隔物
106a、106b、106c、106d、106e‧‧‧圓盤狀基體金屬部
108a、108b、108c、108d、108e‧‧‧鑽石磨粒刃
D‧‧‧刃厚
L‧‧‧刃長
T‧‧‧鑽石磨粒層基部的厚度
W‧‧‧半導體基板
[圖1]就本發明的曝露面積增大石英玻璃構材之例進行繪示的示意平面圖,(a)及(b)係示出圓輪板狀之例,(c)及(d)係示出圓板狀之例。
[圖2]示出本發明的曝露面積增大石英玻璃構材的溝加工的一例,(a)係就已進行溝加工的表面進行繪示的放大示意圖,(b)係就進行溝加工前的表面進行繪示的放大示意圖。
[圖3]就本發明的多層外周刀刃進行繪示的圖,(a)為示意透視圖,(b)為示意正面圖。
[圖4]本發明的多層外周刀刃的主要部分放大示意剖面圖。
[圖5]就利用本發明的多層外周刀刃而進行複數個溝加工的樣子進行繪示的俯視示意圖。
[圖6]就利用本發明的多層外周刀刃而進行複數個溝加工的樣子進行繪示的側面示意圖。
[圖7]就縱型熱處理爐的一例進行繪示的示意圖。
[圖8]就在實施例11、12及比較例1所使用的成膜處理裝置進行繪示的示意剖面圖。
[圖9]就歷來的多層外周刀刃進行繪示的示意正面圖。
在以下雖說明本發明的實施方式,惟此等實施方式係例示者,只要不從本發明的技術思想脫離則當然可進行各種的變化。圖示中,相同構材係以相同符號表現。
於圖1(a)~(d)、圖7及圖8,符號10係本發明的曝露面積增大石英玻璃構材。曝露面積增大石英玻璃構材10,係於半導體基板W的成膜處理中,與被成膜處理的前述半導體基板W一起載置於反應室12內,為曝露於成膜處理氣體的成膜處理氣體曝露用的石英玻璃構材,具有石英玻璃構材主體14、形成於前述石英玻璃構材主體14的表面的複數個凹凸部16,為增大對於成膜處理氣體的曝露面積而成的曝露面積增大石英玻璃構材。
在本發明中,石英玻璃構材主體14的形狀無特別限制,可基於成膜條件而酌情選擇控制成膜處理氣體用的構材形狀及凹凸部的加工,優選上為板狀,列舉如圓形的板狀或多角形的板狀等。在圖示之例,係於圖1(a)、(b)示出俯視下在中央具有中空部的圓形的板狀(圓輪板狀)之例,於圖1(c)、(d)示出俯視下在中央不具有中空部的圓
板狀(晶圓狀)之例。
於圖1(a),符號52係中空部,圓輪板狀的曝露面積增大石英玻璃構材10A的石英玻璃構材主體14,係呈在中央具有中空部的圓形的形狀,在該石英玻璃構材主體14的表面整面,作為複數個凹凸部16形成等間隔的平行的溝18。圖1(b)的曝露面積增大石英玻璃構材10B,係作為複數個凹凸部16形成90°的十字狀的溝18以外係如同圖1(a)的曝露面積增大石英玻璃構材10A。
圖1(c)的曝露面積增大石英玻璃構材10C的石英玻璃構材主體14係俯視下在中央不具有中空部的圓板狀,在該石英玻璃構材主體14的表面整面,作為複數個凹凸部16形成等間隔的平行的溝18。圖1(d)的曝露面積增大石英玻璃構材10D,係作為複數個凹凸部16形成90°的十字狀的溝18以外係如同圖1(c)的曝露面積增大石英玻璃構材10C。
在圖示,係雖示出作為複數個凹凸部16以等間隔形成複數個溝18之例,惟亦可為了控制成膜處理氣體的吸附量,在中央與周圍改變間隔。複數個凹凸部16,在表面形成複數個凹凸即可,其形狀雖無特別限制,惟溝形狀為優選。溝形狀,雖可為直線狀、曲線狀、圓周狀、斷線狀等中的任一者而無特別限制,惟直線狀為適。複數個直線可為平行,亦可交叉,惟如示於圖1(a)~(d),平行或十字狀為優選。此外,亦可組合複數種的形狀而使用。
溝18,係透過精密的溝加工等而形成複數個
凹凸部16,惟可僅形成於石英玻璃構材主體14的一面,亦可形成於兩面。此外,複數個凹凸部16可形成於石英玻璃構材主體14的表面整面,亦可局部地形成,惟在表面整面或至少在表面的外周部形成複數個凹凸部16為適。
將在曝露面積增大石英玻璃構材10的一面已進行溝加工的表面、和進行前述溝加工前的表面示於圖2。
如示於圖2(a),透過溝加工,在一面的表面20形成溝18時,比起如示於圖2(b)的溝加工前的平坦的表面22,表面積增大溝18的內側面24a、24b的部分。因此,如示於圖2(a),在表面20形成溝18時,比起如示於圖2(b)的溝加工前的平坦的表面22,曝露於成膜處理氣體的面積增大。因此,溝18的寬度、深度等,對於增大的曝露面積甚至成膜處理氣體的吸附量的精密的控制係重要的要素。
例如,溝18的寬度、深度等係0.05mm~1.5mm,雖可配合與所要求的吸附量對應之予以增大的面積而酌情選擇,惟溝深相對於溝寬超過1:10時,吸附的處理氣體不會穩定供應至溝底,反之比1:1小時,無法充分獲得面積增大的效果。因此,優選上溝寬:溝深為1:1~1:10,較優選上為1:1.5~1:7。
此外,要精密地控制增大面積甚至吸附量,係溝寬與溝深的精度為重要,溝寬與溝深的變異性,係不超過個別的要求值的±20%為適,為±10%以內較適合。
在曝露面積增大石英玻璃構材10的表面20加
工複數個溝18時,係可利用多層外周刀刃,而對前述石英玻璃構材主體14的表面20同時進行複數個溝加工。
於圖3~圖5,符號26係表示本發明的多層外周刀刃。多層外周刀刃26,係具有單一的圓盤狀基體金屬部28、形成於前述圓盤狀基體金屬部28的外周部30的鑽石磨粒層基部32、複數個刃34從前述鑽石磨粒層基部32突出而一體地設置而成的鑽石磨粒刃部36。
圓盤狀基體金屬部28係以單一的金屬而一體地構成,在中央係穿有插穿旋轉軸的插穿孔38。鑽石磨粒層基部32及鑽石磨粒刃部36,係使鑽石磨粒固著從而形成。要使鑽石磨粒固著,係可將鑽石磨粒以金屬黏合劑燒結或予以電鍍從而予以固著。圓盤狀基體金屬部28係以單一的金屬而一體地構成,使得可將使多層外周刀刃高速旋轉時的刃偏差抑制為極小。
將前述鑽石磨粒層基部32及前述鑽石磨粒刃部36的放大圖示於圖4。在前述鑽石磨粒刃部36方面,係優選上前述鑽石磨粒刃部36的各刃34的刃厚D與刃長L的比為1:5以上、不足1:20。
鑽石磨粒刃部36的刃34的個數方面雖無特別的限定,惟例如將刃以3連刃以上30連刃不足左右的數量而設置即可。雖增加刃的數量時可同時進行溝加工的溝的數量增加,惟過度增加時加工時的各刃的磨損度發生變異,使加工的溝的寬度、深度的變異性增大。在圖3之例係示出使刃34為4連刃之例,在圖4之例係示出使刃34為6
連刃之例。
此外,前述鑽石磨粒層基部32,係優選上具有前述鑽石磨粒刃部36的各刃34的刃長L的2倍以上的厚度T。
再者,優選上在前述複數個刃34與刃34之間的前述鑽石磨粒層基部32的表面形成圓弧狀的凹陷40而成。原因在於切削時的切屑等的除去性提升,可抑制加工負載而減低刃偏差,可提升加工精度。
如此般構成的本發明的多層外周刀刃26,係比起歷來的多層外周刀刃,可精度佳地進行溝加工。在圖9示出歷來的多層外周刀刃100。歷來的多層外周刀刃100,係透過隔著間隔物104而組裝複數個單一外周刀刃102a、102b、102c、102d、102e,從而作成多層外周刀刃。並且,各單一外周刀刃102a、102b、102c、102d、102e,係個別具有圓盤狀基體金屬部106a、106b、106c、106d、106e,在該等圓盤狀基體金屬部106a、106b、106c、106d、106e的外周部設置鑽石磨粒刃108a、108b、108c、108d、108e。
在如示於圖9的歷來的多層外周刀刃100,係由於隔著間隔物104而組裝複數個單一外周刀刃102a、102b、102c、102d、102e,故要以例如100μm級之間距、深度等進行溝加工,係發生組裝精度的問題。為此,在本發明的多層外周刀刃26,係構成為在不使用間隔物之下,使圓盤狀基體金屬部28為單一者,在該圓盤狀基體金屬部
28的外周部30設置鑽石磨粒層基部32,進一步在鑽石磨粒層基部32的外周部設置鑽石磨粒刃部36。
利用該多層外周刀刃26,而如示於圖5般一面使多層外周刀刃26旋轉一面橫穿石英玻璃構材主體14的表面,即可透過鑽石磨粒刃部36而同時進行複數個溝加工。
並且,如以箭頭示於圖6,將該複數個溝同時加工,使位置偏移而反復,從而成為示於圖1的本發明的曝露面積增大石英玻璃構材。
於圖7,示出縱型熱處理爐的一例。縱型熱處理爐42,係具有以石英而構成的反應室12、對前述反應室12導入成膜處理氣體等的氣體的氣體導入管44、加熱前述反應室12的加熱器46、供於就前述反應室12內的氣體進行排氣用的排氣管48。此外,在反應室12內係已搬入晶舟50。在該晶舟50,係載置複數個半導體基板W(例如矽晶圓)。
並且,在晶舟50之上端及下端的載置部,係載置本發明的曝露面積增大石英玻璃構材10。在此狀態下從氣體導入管44將成膜處理氣體導入於反應室12內,對半導體基板W進行CVD等的成膜處理。進行成膜處理的半導體基板W,係已透過處理在表面形成凹凸,曝露面積增大石英玻璃構材10係已增大對於成膜處理氣體的曝露面積,故對於半導體基板W的成膜變均勻。
以下雖就本發明透過實施例進一步具體進行說明,惟本發明非由此等實施例所限定者不言而喻。
準備本發明的多層外周刀刃,具有單一的圓盤狀基體金屬部、形成於圓盤狀基體金屬部的外周部的鑽石磨粒層部、從鑽石磨粒層部基部複數個刃突出而一體地設置而成的利用金屬黏合劑下的鑽石磨粒刃部。透過此多層外周刀刃,製作形成複數個凹凸部而成的本發明的曝露面積增大石英玻璃構材。將實施例1~10的多層外周刀刃及曝露面積增大石英玻璃構材的細節示於表1。
於表1,形狀Y係構材規格:僅凹凸加工單面表面整面、90°十字交叉、間距0.5mm、石英玻璃構材主體的外徑(OD)340mm×內徑(ID)302mm×厚度t0.8mm(圓輪板
狀);形狀X係構材規格:僅凹凸加工單面表面整面、平行、間距0.5mm、石英玻璃構材主體的外徑(OD)300mm×厚度t0.8mm(圓板狀)。此外,BW MAX:溝寬的變異性的最大%(絕對值);BD MAX:溝深的變異性的最大%(絕對值);D:刃厚;L:刃長;T:基部厚度。
如示於表1,透過使用本發明的多層外周刀刃,獲得一曝露面積增大石英玻璃構材,形成溝形狀的複數個凹凸部,且該溝的溝寬與溝深的變異性的範圍在20%以內。
此外,實施例1、2及6~8為溝寬的變異性不足10%,為更期望的結果。
準備示於圖9之隔著間隔物而組裝複數個單刀下的歷來的多層外周刀刃。利用此等多層外周刀刃而製作與實施例1~10同樣的形狀Y、X的構材。將實驗例1~5的多層外周刀刃及曝露面積增大石英玻璃構材的細節示於表2。於表2,S係組裝間隔物與刀後的總寬。
如示於表2,實驗例1~5中的任一者皆比起實施例1~10,溝寬與溝深的變異性變大,實用上不適合。
透過與實施例2同樣的方法,準備圓輪板狀的曝露面積增大石英玻璃構材,利用示於圖8的成膜處理裝置而進行氮化膜的成膜試驗,進行對於曝露面積增大石英玻璃構材的處理氣體吸附效果的驗證。如示於圖8,在基座51上載置圓輪板狀的曝露面積增大石英玻璃構材10,在前述圓輪板狀的曝露面積增大石英玻璃構材10之中空部52配置作為成膜被處理物的半導體基板W並進行成膜試驗。此外,作為參考例1,不配置石英玻璃構材下僅在基座51上載置半導體基板W並進行同樣的實驗。
就成膜後的基板表面的膜之中央與外周部的相對的膜厚比,使中央為1而進行確認。將結果示於表3。
除了使用透過與實驗例3同樣的方法而獲得的圓輪板狀的曝露面積增大石英玻璃構材以外係透過與實施例11同樣的方法而進行實驗。將結果示於表3。
除了使用無溝的圓輪板狀的石英玻璃構材以外係透過與實施例11同樣的方法而進行實驗。將結果示於表3。
如示於表3,相對於比較例1,可得知實施例11及12係因曝露面積的增大所致的膜厚的外周厚膜化的抑制效果為大。此外,得知儘管比起溝深的相對於溝寬的比為5倍,亦即比起期望的為不足10倍的實施例11,10倍以上的實施例12係溝深度深,面積增大較多,外周的厚膜化的抑制效果變少,吸附效果的效率方面存在差異。
就曝露面積增大石英玻璃構材的溝的變異性與吸附
量,將吸附量的變異性,比作處理氣體,依對於純水的表面的附著殘留重量的差異而進行驗證。評價係以下述程序1)~5)進行。
1)於水槽注滿既定的純水,就重量進行計測。
2)使石英玻璃構材(形狀Y、X)浸漬於裝有純水的水槽,在水中保持10分鐘。
3)接著將產品從水面抬起,在水槽上從水面分離而保持60秒鐘,使從構材所分離的水滴落入水槽。
4)就抽出前述3)的處理後的構材後的水槽的包含殘留純水的重量進行計測。
5)使前述1)的重量與4)的重量的差,為對於石英玻璃構材的純水的吸附重量。
將此就各石英玻璃構材反復10次,以吸附重量的MAX-MIN、及平均進行驗證。
各石英玻璃構材,係分別使用透過與實施例13:實施例2、實施例14:實施例6、實施例15:實施例9同樣的方法而獲得的曝露面積增大石英玻璃構材。將結果示於表4。
除了使用與比較例1同樣的無溝的圓輪板狀的石英玻璃構材以外係透過與實施例13~15同樣的方法而進行實驗。將結果示於表4。
除了變更石英玻璃構材以外係透過與實施例13~15同樣的方法而進行實驗。實驗例6及7係分別使用透過與實驗例4及5同樣的方法而獲得的曝露面積增大石英玻璃構材。將結果示於表4。
如示於表4,在使用溝的變異性小的曝露面積增大石英玻璃構材下的實施例13~15,係成為吸附量的變異性亦極小者。此外,比較例2與實施例13的純水的吸附量,係與比較例1及實施例11的外周部膜厚化抑制效果非常一致,可得知吸附量越大則膜厚化的抑制效果越大。再者,從實施例14、15與實驗例6、7,可得知溝的溝寬與溝深的精度的變異性大時,吸附量亦大幅變異。由此,可驗證透過就基於溝的溝寬、溝深下的增大曝露面積進行控制而使得吸附量成為一定。
10、10A~10D‧‧‧曝露面積增大石英玻璃構材
14‧‧‧石英玻璃構材主體
16‧‧‧凹凸部
18‧‧‧溝
20‧‧‧溝加工後的表面
52‧‧‧中空部
Claims (8)
- 一種曝露面積增大石英玻璃構材,其為在半導體基板的成膜處理中與被成膜處理的前述半導體基板一起載置於反應室內並曝露於成膜處理氣體的成膜處理氣體曝露用的石英玻璃構材,其具有:石英玻璃構材主體;和溝形狀的複數個凹凸部,其形成於前述石英玻璃構材主體的表面,溝寬與溝深為0.05mm~1.5mm;其中,使該石英玻璃構材主體的表面的複數個凹凸部的溝形狀的溝寬與溝深的比為1:1~1:10,且該溝的溝寬與溝深的變異性的範圍各在±20%以內,從而形成對於成膜處理氣體的曝露面積被控制而增大的曝露面積增大石英玻璃構材。
- 如申請專利範圍第1項的曝露面積增大石英玻璃構材,其中,前述被控制而增大的曝露面積為透過多層外周刀刃而同時形成於表面的複數個溝形狀,該溝的溝寬與溝深的變異性的範圍各在±10%以內。
- 一種曝露面積增大石英玻璃構材的製造方法,該曝露面積增大石英玻璃構材為如申請專利範圍第1或2項的曝露面積增大石英玻璃構材,透過利用多層外周刀刃而對前述 石英玻璃構材主體的表面同時進行複數個溝加工,從而形成複數個凹凸部。
- 如申請專利範圍第3項的曝露面積增大石英玻璃構材的製造方法,其中,透過前述溝加工而獲得的曝露面積增大石英玻璃構材的已進行溝加工的一面的表面積,與進行前述溝加工前的前述曝露面積增大石英玻璃構材的前述單面的表面積相較下為3倍以上。
- 一種多層外周刀刃,用於進行在如申請專利範圍第3項的曝露面積增大石英玻璃構材的製造方法中的溝加工,具有:單一的圓盤狀基體金屬部;形成於前述圓盤狀基體金屬部的外周部的鑽石磨粒層基部;和複數個刃從前述鑽石磨粒層基部突出而一體地設置而成的鑽石磨粒刃部。
- 如申請專利範圍第5項的多層外周刀刃,其中,前述鑽石磨粒刃部的各刃的刃厚與刃長的比為1:5以上。
- 如申請專利範圍第5項的多層外周刀刃,其中,前述鑽石磨粒層基部具有前述鑽石磨粒刃部的各刃的刃長的2倍以上的厚度。
- 如申請專利範圍第5~7項中任1項的多層外周刀刃,其中,在前述複數個刃與刃之間的前述鑽石磨粒層基部的表面形成圓弧狀的凹陷。
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