TWI734528B - Composite substrate - Google Patents

Composite substrate Download PDF

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TWI734528B
TWI734528B TW109120255A TW109120255A TWI734528B TW I734528 B TWI734528 B TW I734528B TW 109120255 A TW109120255 A TW 109120255A TW 109120255 A TW109120255 A TW 109120255A TW I734528 B TWI734528 B TW I734528B
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aluminum
substrate
silicon carbide
active metal
metal solder
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TW109120255A
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TW202200527A (en
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陳瑞祥
焦若雲
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禾伸堂企業股份有限公司
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Priority to CN202010961991.5A priority patent/CN113809016B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Ceramic Products (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本發明係提供一種複合基板，包括上下層疊之陶瓷基板及鋁基碳化矽基板，並於陶瓷基板與鋁基碳化矽基板之間係通過活性金屬焊料進行熱壓接合形成一接合面，其中該鋁基碳化矽基板係含有50~83vol%的SiC組成，活性金屬焊料係選自銀、銅、鈦、鋅及鋁所組成的群組之任一，此種複合基板僅需選用適當SiC組成之鋁基碳化矽基板，並利用其本身所具有高耐熱及低熱膨脹的特性，當承受高溫熱壓時，就可以通過活性金屬焊料直接與陶瓷基板共同壓合形成整體散熱效果佳且連續緻密之接合界面，以簡化製程、提高接合的強度與良率，成本更加便宜，同時可提高散熱效果及耐衝擊強度，對於抵抗衝擊和震動等機械性質及產品可靠度等，都有優越的表現，也更加適用於車用領域。 The present invention provides a composite substrate, which includes a ceramic substrate and an aluminum-based silicon carbide substrate stacked on top of each other. The ceramic substrate and the aluminum-based silicon carbide substrate are hot-compressed with active metal solder to form a joint surface, wherein the aluminum The base silicon carbide substrate contains 50-83 vol% SiC composition, and the active metal solder is selected from any group consisting of silver, copper, titanium, zinc and aluminum. This kind of composite substrate only needs to select the appropriate SiC composition aluminum Based on silicon carbide substrate, and using its own characteristics of high heat resistance and low thermal expansion, when it is subjected to high temperature hot pressing, it can be directly pressed together with the ceramic substrate through active metal solder to form a continuous and dense joint interface with good heat dissipation. , In order to simplify the process, improve the strength and yield of the joint, the cost is cheaper, and the heat dissipation effect and impact strength can be improved at the same time. It has superior performance in resisting impact and vibration and other mechanical properties and product reliability, etc., and it is more applicable In the automotive field.

Description

複合基板 Composite substrate

本發明係提供一種複合基板，尤指僅需選用具有適當SiC組成之AlSiC基板，就可以通過活性金屬焊料直接與陶瓷基板進行熱壓接合形成一整體散熱效果佳且連續緻密之接合界面，以簡化製程、提高接合的強度與良率，成本更加便宜。 The present invention provides a composite substrate, in particular, it is only necessary to select an AlSiC substrate with a suitable SiC composition, which can be directly hot-compressed with a ceramic substrate through active metal solder to form a continuous and dense bonding interface with good overall heat dissipation effect to simplify The manufacturing process, the strength and yield of the joint are improved, and the cost is cheaper.

按，陶瓷的機械強度佳，並具有良好的耐熱性、化學穩定性、抗氧化性、電絕緣性、緻密性與光學特性等，也可藉由成分改變其性質應用於不同需求製程中，所以陶瓷被廣泛地應用於電子器件、光電與半導體元件封裝、汽車、通訊領域、航太科技、化工等產業，而陶瓷材料製成之陶瓷基板，則因陶瓷材料本身具有的導熱率高、耐熱性好、高絕緣、高強度、與晶片材料熱匹配等性能，非常適合作為功率器件的封裝基板，可將熱源(如晶片、半導體器件)產生的熱量從陶瓷基板導出，以滿足大功率電子器件的使用需求。 According to the fact that ceramics have good mechanical strength, and have good heat resistance, chemical stability, oxidation resistance, electrical insulation, compactness and optical properties, etc., it can also be used in different processes by changing its properties by composition, so Ceramics are widely used in electronic devices, optoelectronics and semiconductor component packaging, automobiles, communications, aerospace technology, chemical industries and other industries, while ceramic substrates made of ceramic materials have high thermal conductivity and heat resistance due to the high thermal conductivity and heat resistance of ceramic materials. Good performance, high insulation, high strength, and thermal matching with the chip material. It is very suitable as a packaging substrate for power devices. Usage requirements.

一般陶瓷基板材料包括氧化鋁(Al2O3)、氮化鋁(AlN)、氮化矽(Si3N4)、氧化鈹(BeO)、碳化矽(SiC)等，為了獲得較佳的熱與電性能、機械強度、氣密性及較小尺寸變化等，在實際的應用上，常會將陶瓷材料與金屬(如鋁或銅等)散熱元件或線路作接合，其接合的 方式包含擴散接合、硬焊及焊接等，並在利用硬焊的方式接合金屬與陶瓷基板的過程中，使用一般的合金焊料難以與陶瓷材料潤濕，便會造成合金焊料與陶瓷材料間之接合強度不足。在此種情況之下，可利用預金屬化法與活性硬焊法來改善其潤濕性，其中預金屬化法係陶瓷材料之接合面在硬焊前先施行金屬化的處理，而活性硬焊法係在合金焊料(如鎳、銅、銀等)中添加微量活性金屬(如鈦、鋯等)配製成一活性金屬焊料，可與陶瓷材料反應、產生潤濕效果而達到接合之目的，且因製程的操作十分簡便，故在陶瓷封裝與金屬化的應用極為廣泛。 Common ceramic substrate materials include aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), silicon nitride (Si 3 N 4 ), beryllium oxide (BeO), silicon carbide (SiC), etc., in order to obtain better heat With electrical properties, mechanical strength, air tightness, and small size changes, in practical applications, ceramic materials and metal (such as aluminum or copper, etc.) heat dissipation components or circuits are often bonded. The bonding method includes diffusion bonding. , Brazing and soldering, etc., and in the process of joining metal and ceramic substrates by brazing, it is difficult to wet the ceramic materials with ordinary alloy solders, which will result in insufficient bonding strength between the alloy solders and ceramic materials. In this case, the pre-metallization method and active brazing method can be used to improve the wettability. The pre-metallization method is that the joint surface of the ceramic material is metalized before the brazing, and the active hard The welding method is to add a small amount of active metal (such as titanium, zirconium, etc.) to the alloy solder (such as nickel, copper, silver, etc.) to prepare an active metal solder, which can react with the ceramic material to produce a wetting effect to achieve the purpose of joining , And because the operation of the manufacturing process is very simple, it is widely used in ceramic packaging and metallization.

然而，傳統陶瓷基板與鋁金屬基板〔如鋁基金屬板或散熱鰭片(Heat Sink)等〕進行接合的方式，一般係將陶瓷基板其中一面與銅金屬通過活性金屬硬焊(AMB)材料(簡稱為活性金屬焊料)先進行焊接形成AMB基板以後，再對銅層進行選擇性蝕刻始產生銅金屬線路佈局，而陶瓷基板之另一面則通過導熱膠(如黏著劑或樹脂等)或其他表面處理〔如金屬化(如鍍鎳、金、錫等)或陽極氧化處理等〕方式與鋁金屬基板進行熱壓接合形成一複合基板，便可藉由陶瓷基板表面的銅金屬線路搭載工作晶片吸收負載產生之熱能，並以熱傳導的方式通過接合界面傳遞至鋁金屬基板或被鋁金屬基板所吸收來進行散熱，進而減低過度熱能蓄積於陶瓷基板所引發之熱衝擊或影響工作晶片運作效能。 However, the traditional ceramic substrate and aluminum metal substrate (such as aluminum-based metal plate or heat sink (Heat Sink), etc.) for joining, generally one side of the ceramic substrate and copper metal through active metal brazing (AMB) material ( Referred to as active metal solder), the AMB substrate is formed by soldering first, and then the copper layer is selectively etched to produce the copper metal circuit layout, and the other side of the ceramic substrate is made of thermal conductive glue (such as adhesive or resin) or other surface Treatment (such as metallization (such as nickel, gold, tin, etc.) or anodizing treatment, etc.) is hot-compression bonded with aluminum metal substrate to form a composite substrate, which can be absorbed by the copper metal circuit on the surface of the ceramic substrate. The heat generated by the load is transferred to the aluminum metal substrate through the bonding interface or absorbed by the aluminum metal substrate through thermal conduction, thereby reducing the thermal shock caused by excessive heat accumulation on the ceramic substrate or affecting the operating performance of the working chip.

惟該陶瓷基板選用黏著劑或樹脂與鋁金屬基板進行接合，其雖可在低溫下進行，降低了接合的過程中產生的熱應力問題，不過樹脂對熱的傳導效果較差，在界面會妨礙熱傳導，以致使接合後複合基板整體之熱阻值增加，長時間使用亦會因老化造成界面剝離，且因樹脂無法在陶 瓷基板上潤濕，進而引發散熱效果不佳及界面縫隙等問題；又，若是陶瓷基板選用表面處理方式與鋁金屬基板進行接合時，如化學鍍、高溫燒結、蒸鍍、濺鍍等金屬化處理，其所施加表面處理的材料含有複雜化學組成，收縮膨脹等變異因素較多，造成熱壓接合後很容易發現有界面接合力差、緻密性不良、易氧化或金屬化層厚度不易控制等問題。換言之，無論選擇樹脂或表面處理方式都不是複合基板之理想選項，尤其是不利於同時講究高導熱來對外散熱及耐衝擊之車用領域發展，也是此行業者長久以來欲改善之重要課題及問題所在。 However, the ceramic substrate is bonded with an aluminum metal substrate using adhesive or resin. Although it can be carried out at low temperatures, it reduces the thermal stress generated during the bonding process. However, the resin has a poor heat conduction effect and hinders heat conduction at the interface. , So that the overall thermal resistance of the composite substrate increases after bonding. Long-term use will also cause the interface to peel off due to aging, and the resin cannot be in the ceramic Wetting on the ceramic substrate will cause problems such as poor heat dissipation and interface gaps; also, if the ceramic substrate is joined to the aluminum metal substrate by surface treatment, such as electroless plating, high temperature sintering, evaporation, sputtering, etc. Treatment, the surface treatment material contains complex chemical composition, shrinkage and expansion and other variable factors, it is easy to find poor interface bonding force, poor compactness, easy oxidation, or difficult control of the thickness of the metallized layer after thermocompression bonding. problem. In other words, the choice of resin or surface treatment is not an ideal choice for composite substrates, especially not conducive to the development of the automotive field where high thermal conductivity is required for external heat dissipation and impact resistance. It is also an important issue and problem that the industry wants to improve for a long time. Where.

故，發明人有鑑於上述缺失，乃搜集相關資料，經由多方的評估及考量，並以從事於此行業所累積之多年經驗，持續試作與修改，始設計出此種複合基板的發明專利誕生。 Therefore, in view of the above-mentioned deficiencies, the inventor collected relevant information, evaluated and considered from many parties, and continued to trial and modify with years of experience in this industry, and finally designed the invention patent for this composite substrate.

本發明之主要目的乃在於複合基板係以具有適當含量佔比的SiC組成之鋁基碳化矽基板取代鋁金屬基板，並利用其耐熱溫度及耐熱係數較傳統金屬基板高，且熱膨脹變化小不易發生高溫變形，具有高耐熱及低熱膨脹的特性，當承受高溫熱壓時，就可以通過活性金屬焊料直接與陶瓷基板共同壓合形成一整體散熱效果佳且連續緻密之接合界面，不僅可以簡化製程，並提高接合的強度與良率，成本更加便宜，同時可提高散熱效果及耐衝擊強度，相較傳統複合基板對於抵抗衝擊和震動等機械性質及產品可靠度等都有優越的表現，也更加適用於車用領域。 The main purpose of the present invention is to replace the aluminum metal substrate with an aluminum-based silicon carbide substrate composed of SiC with an appropriate content of the composite substrate, and use its heat resistance temperature and heat resistance coefficient to be higher than that of the traditional metal substrate, and the thermal expansion change is small and difficult to occur. High temperature deformation, with high heat resistance and low thermal expansion characteristics, when subjected to high temperature hot pressing, it can be directly pressed together with the ceramic substrate through the active metal solder to form an overall heat dissipation effect and continuous dense bonding interface, which not only simplifies the manufacturing process, It also improves the strength and yield of the joint, and the cost is cheaper. At the same time, it can improve the heat dissipation effect and impact resistance. Compared with the traditional composite substrate, it has superior performance in resisting impact and vibration and other mechanical properties and product reliability. It is also more applicable In the automotive field.

本發明之次要目的乃在於複合基板所選用之活性金屬焊料係選自銀、銅、鈦、鋅及鋁所組成的群組之任一，並利用其活性金屬具有 的高活性，可提高焊料熔化後對陶瓷的潤濕反應，使鋁基碳化矽基板不需進行金屬化表面處理，就可以直接與陶瓷基板進行熱壓接合，最終形成無任何界面縫隙或界面剝離之複合基板，且因活性金屬焊料的熱阻值較傳統接合界面使用之樹脂低許多，所以對熱的傳導效果更佳，可將熱源所產生的熱量通過陶瓷基板、活性金屬焊料快速熱傳導至鋁基碳化矽基板對外釋放，以減少熱量蓄積於陶瓷基板上，整體之散熱效果更為良好。 The secondary purpose of the present invention is that the active metal solder selected for the composite substrate is selected from any group consisting of silver, copper, titanium, zinc and aluminum, and uses its active metal to have The high activity can improve the wetting reaction of the ceramic after the solder is melted, so that the aluminum-based silicon carbide substrate can be directly hot-compressed with the ceramic substrate without metallization surface treatment, and finally formed without any interface gaps or interface peeling The composite substrate, and because the thermal resistance of the active metal solder is much lower than the resin used in the traditional bonding interface, the heat conduction effect is better, and the heat generated by the heat source can be quickly transferred to the aluminum through the ceramic substrate and the active metal solder The base silicon carbide substrate is released to the outside to reduce the heat accumulation on the ceramic substrate, and the overall heat dissipation effect is better.

本發明之另一目的乃在於複合基板之接合界面，缺乏金屬化表面處理含有複雜化學組成、收縮膨脹等變異因素所引發界面接合力差、緻密性不良等問題，並於鋁基碳化矽基板通過活性金屬焊料與陶瓷基板直接熱壓接合後可形成一連續緻密之接合界面，相較傳統複合基板常見因為熱膨脹變形所引發介面縫隙或界面剝離，更能有效提高其耐衝擊的強度，產品可靠度更為優越。 Another object of the present invention is that the bonding interface of the composite substrate lacks metallized surface treatment, which contains complex chemical composition, shrinkage and expansion and other variable factors that cause problems such as poor interface bonding force and poor compactness, and it passes through the aluminum-based silicon carbide substrate. The active metal solder and the ceramic substrate can be directly hot-pressed to form a continuous and dense bonding interface. Compared with the traditional composite substrate, the interface gap or interface peeling caused by thermal expansion and deformation can effectively improve its impact resistance and product reliability. More superior.

1:陶瓷基板 1: ceramic substrate

2:鋁基碳化矽基板 2: Aluminum-based silicon carbide substrate

3:活性金屬焊料 3: Active metal solder

L:荷重 L: load

〔第1圖〕係本發明複合基板之結構示意圖。 [Figure 1] is a schematic diagram of the structure of the composite substrate of the present invention.

〔第2圖〕係本發明活性金屬焊料組成之數據表。 [Figure 2] is a data table of the composition of the active metal solder of the present invention.

〔第3圖〕係本發明複合基板於熱壓接合時之示意圖。 [Figure 3] is a schematic diagram of the composite substrate of the present invention during thermocompression bonding.

〔第4圖〕係本發明實施例所試驗之數據及接合面效果判定表。 [Figure 4] is the test data and the joint effect judgment table of the embodiment of the present invention.

為達成上述目的及功效，本發明所採用之技術手段及其構造，茲繪圖就本發明之較佳實施例詳加說明其構造與功能如下，俾利完全瞭解。 In order to achieve the above-mentioned purposes and effects, the technical means and structure adopted by the present invention are illustrated in detail below to illustrate the structure and functions of the preferred embodiments of the present invention, so as to fully understand.

請參閱如第1~4圖所示，係分別為本發明複合基板之結構示意圖、活性金屬焊料組成之數據表、複合基板於熱壓接合時之示意圖及實施例所試驗之數據及接合面效果判定表，由圖中可清楚看出，本發明之複合基板係包括上下層疊之陶瓷基板1及鋁基碳化矽(AlSiC)基板2，並於陶瓷基板1與鋁基碳化矽基板2之間係通過活性金屬焊料〔係活性金屬硬焊(AMB)材料的簡稱〕3進行熱壓接合形成一接合面，其中該上層陶瓷基板1包含陶瓷基底及其至少一側表面上之金屬層結構，陶瓷基底材料較佳實施可為氮化矽(Si3N4)，但並不以此為限，亦可為氮化鉭(TaN)、氮化鋁(AlN)、氧化鈹(BeO)、氧化鋁(Al2O4)或碳化矽(SiC)等，且該金屬層結構係通過高/低溫共燒陶瓷(HTCC/LTCC)、直接覆銅(DBC)、直接電鍍銅(DPC)或活性金屬硬焊(AMB)等技術，在陶瓷基底上表面附著有一銅金屬層，再於銅金屬層上進行蝕刻形成銅金屬線路，便可將晶片、半導體或功率器件等搭載或封裝在陶瓷基板1上，並與銅金屬線路通過焊料、引線鍵合等方式形成電性連接。 Please refer to Figures 1 to 4, which are the structural schematic diagram of the composite substrate of the present invention, the data sheet of the active metal solder composition, the schematic diagram of the composite substrate during thermal compression bonding, and the experimental data and bonding surface effects of the examples. Judgment table, as can be clearly seen from the figure, the composite substrate of the present invention includes a ceramic substrate 1 and an aluminum-based silicon carbide (AlSiC) substrate 2 stacked up and down, and is connected between the ceramic substrate 1 and the aluminum-based silicon carbide substrate 2. A joint surface is formed by thermocompression bonding with active metal solder [abbreviation of active metal brazing (AMB) material] 3, wherein the upper ceramic substrate 1 includes a ceramic substrate and a metal layer structure on at least one surface thereof. The ceramic substrate The preferred material can be silicon nitride (Si 3 N 4 ), but it is not limited to this. It can also be tantalum nitride (TaN), aluminum nitride (AlN), beryllium oxide (BeO), aluminum oxide ( Al 2 O 4 ) or silicon carbide (SiC), etc., and the metal layer structure is through high/low temperature co-fired ceramics (HTCC/LTCC), direct copper (DBC), direct copper electroplating (DPC) or active metal brazing (AMB) and other technologies, a copper metal layer is attached to the upper surface of the ceramic substrate, and then the copper metal layer is etched to form a copper metal circuit, so that wafers, semiconductors or power devices can be mounted or packaged on the ceramic substrate 1, and It is electrically connected with copper metal circuit through soldering, wire bonding, etc.

在本實施例中，上述之複合基板下層係鋁基碳化矽基板2，其特性主要取決於SiC的體積百分比(vol%，即組成的含量)、分佈與粒徑大小等，可通過改變其組成的含量而加以調整，由於鋁基碳化矽基板2係含有50~83vol%的SiC組成，較佳實施為63vol%，並因為含有50vol%以上的SiC組成，其耐熱溫度及耐熱係數較傳統金屬基板或陶瓷基板為高，且熱膨脹變化小不易發生高溫變形，使鋁基碳化矽基板2本身具有高耐熱及低熱膨脹的特性，即可取代鋁金屬基板，並與陶瓷基板1通過活性金屬焊料3直接進行熱壓接合形成一複合基板。 In this embodiment, the lower layer of the above-mentioned composite substrate is an aluminum-based silicon carbide substrate 2, and its characteristics mainly depend on the volume percentage (vol%, that is, the content of the composition), distribution, and particle size of SiC, which can be changed by changing its composition Since the aluminum-based silicon carbide substrate 2 contains 50~83vol% SiC composition, it is preferably 63vol%, and because it contains more than 50vol% SiC composition, its heat resistance temperature and heat resistance coefficient are better than traditional metal substrates Or the ceramic substrate is high, and the thermal expansion change is small, and it is not easy to deform at high temperature, so that the aluminum-based silicon carbide substrate 2 itself has the characteristics of high heat resistance and low thermal expansion, which can replace the aluminum metal substrate and directly interact with the ceramic substrate 1 through active metal solder 3 Perform thermocompression bonding to form a composite substrate.

如第2、3圖所示，本發明實施例所選用之活性金屬焊料3組成配比主要有三種，其中焊料A含有體積百分比為70vol%的銀(Ag)、28vol%的銅(Cu)及2vol%的鈦(Ti)，焊料B含有體積百分比為10vol%的銀(Ag)、85vol%的銅(Cu)及5vol%的鈦(Ti)，以及焊料C含有體積百分比為80vol%的鋅(Zn)及20vol%的鋁(Al)，該些焊料係利用活性金屬(如鈦、鋅)與銀、銅、鋁等金屬所配製而成，由於活性金屬為具有高活性，可提高焊料熔化後對陶瓷的潤濕反應，所以使陶瓷表面無需金屬化，就可與金屬實現接合之目的。 As shown in Figures 2 and 3, there are three main composition ratios of active metal solder 3 used in the embodiment of the present invention. Solder A contains 70vol% silver (Ag), 28vol% copper (Cu) and 2vol% titanium (Ti), solder B contains 10vol% silver (Ag), 85vol% copper (Cu) and 5vol% titanium (Ti), and solder C contains 80vol% zinc ( Zn) and 20vol% aluminum (Al). These solders are prepared by using active metals (such as titanium, zinc) and silver, copper, aluminum and other metals. Because the active metals have high activity, they can improve the The wetting reaction of ceramics, so that the ceramic surface can be joined with metal without metallization.

當陶瓷基板1、鋁基碳化矽基板2與活性金屬焊料3進行熱壓接合時，可使用真空加熱爐或熔爐將活性金屬焊料3加熱到熔點以上的燒結溫度(如較佳為580℃~865℃溫度區間)，如圖4之數據表所示，燒結溫度依焊料組成的配比不同可分別為865℃、510℃或580℃等，並使活性金屬焊料3熔化持溫一段時間後，可充分填充於陶瓷基板1與鋁基碳化矽基板2之間進行潤濕反應，再使用預定荷重L可分別為0.58kgf/cm2(0.075Mpa)、1.17kgf/cm2(0.11Mpa)或0.21kgf/cm2(0.028Mpa)進行熱壓接合，或者是可使用加熱棒來加熱荷重L(如熱壓頭)，並由熱壓頭直接熱壓陶瓷基板1來加熱活性金屬焊料3達到預定的燒結溫度，而隨著活性硬焊溫度或持溫時間增加，便可利用鋁基碳化矽基板2本身具有高耐熱及低熱膨脹的特性，使其承受高溫熱壓時，可通過活性金屬焊料3與陶瓷基板1共同壓合形成一具有緻密接合面之複合基板，並由複合基板之接合界面顯微金相組織，可觀察到活性金屬焊料3的合金焊料能有效的填滿陶瓷基板1與鋁基碳化矽基板2的表面孔隙，具有良好的潤濕性，以供 陶瓷基板1與鋁基碳化矽基板能夠緊密接合，且二者間之接合界面無縫隙產生，也不易發生撓曲變形，最終形成無任何界面縫隙或界面剝離之複合基板。 When the ceramic substrate 1, the aluminum-based silicon carbide substrate 2 and the active metal solder 3 are thermally bonded, a vacuum heating furnace or a furnace can be used to heat the active metal solder 3 to a sintering temperature above the melting point (e.g., 580°C~865 ℃ temperature range), as shown in the data table in Figure 4, the sintering temperature can be 865℃, 510℃ or 580℃ respectively depending on the composition of the solder, and after the active metal solder 3 is melted and held for a period of time, it can be It is fully filled between the ceramic substrate 1 and the aluminum-based silicon carbide substrate 2 for wetting reaction, and the predetermined load L can be respectively 0.58kgf/cm 2 (0.075Mpa), 1.17kgf/cm 2 (0.11Mpa) or 0.21kgf /cm 2 (0.028Mpa) for thermal compression bonding, or a heating rod can be used to heat the load L (such as a thermal head), and the ceramic substrate 1 can be directly pressed by the thermal head to heat the active metal solder 3 to achieve the predetermined sintering With the increase of the active brazing temperature or holding time, the aluminum-based silicon carbide substrate 2 itself has the characteristics of high heat resistance and low thermal expansion, so that it can pass the active metal solder 3 and ceramics when it is subjected to high temperature hot pressing. The substrate 1 is pressed together to form a composite substrate with a dense joint surface, and the metallographic structure of the joint interface of the composite substrate is microscopic. It can be observed that the alloy solder of the active metal solder 3 can effectively fill the ceramic substrate 1 and the aluminum-based carbonization The surface pores of the silicon substrate 2 have good wettability, so that the ceramic substrate 1 and the aluminum-based silicon carbide substrate can be tightly joined, and the joint interface between the two is seamless, and it is not easy to be flexed and deformed. Any interfacial gap or interfacial peeling composite substrate.

具體而言，可觀察如圖4所列示本發明複合基板之實施例1~10試驗數據，其中該複合基板結構上層陶瓷基板1選用之陶瓷基底材料係厚度0.32mm之氮化矽(Si3N4)，下層鋁基碳化矽(AlSiC)基板2組成係厚度3.00mm、含量佔比可分別為50%、63%與83%之碳化矽(SiC)，並通過活性金屬焊料3不同的組成配比(如焊料A至C)，在不同的荷重L及燒結溫度下進行熱壓接合形成具有接合面之複合基板。 Specifically, the experimental data of Examples 1 to 10 of the composite substrate of the present invention can be observed as shown in Fig. 4. The ceramic base material selected for the upper ceramic substrate 1 of the composite substrate structure is silicon nitride (Si 3) with a thickness of 0.32 mm. N 4 ), the lower aluminum-based silicon carbide (AlSiC) substrate 2 is composed of silicon carbide (SiC) with a thickness of 3.00mm and a content of 50%, 63%, and 83%, respectively, and has different compositions through active metal solder 3 The proportion (such as solder A to C), under different load L and sintering temperature, heat and pressure bonding to form a composite substrate with a bonding surface.

根據實施例1~4之接合面效果判定的結果，可發現在相同的荷重L(如0.58kgf/cm2)及燒結溫度(如865℃)下，不論是選用焊料A或焊料B組成配比，只要鋁基碳化矽基板2之SiC組成含量高於50%(如63%或83%)，其接合面效果判定皆為良好，但是根據實施例5~7可發現在燒結溫度(如865℃)不變之下，隨著荷重L從0.58kgf/cm2增加至1.17kgf/cm2，鋁基碳化矽基板2之SiC組成含量為50%或鋁基碳化矽基板2經過預金屬化表面處理(如表面電鍍)時，不論是選用焊料A或焊料B組成配比，其接合面效果判定皆為不良。 According to the results of the joint surface effect judgment of Examples 1 to 4, it can be found that under the same load L (such as 0.58kgf/cm 2 ) and sintering temperature (such as 865°C), no matter the composition ratio of solder A or solder B is selected As long as the SiC composition content of the aluminum-based silicon carbide substrate 2 is higher than 50% (such as 63% or 83%), the bonding effect is judged to be good, but according to Examples 5-7, it can be found that the sintering temperature (such as 865°C) ) Without change, as the load L increases from 0.58kgf/cm 2 to 1.17kgf/cm 2 , the SiC composition content of the aluminum-based silicon carbide substrate 2 is 50% or the aluminum-based silicon carbide substrate 2 has undergone pre-metallization surface treatment (Such as surface electroplating), no matter the composition ratio of solder A or solder B is selected, the effect of the joint surface is judged to be bad.

此外，根據實施例8~10之接合面效果判定的結果，可發現當鋁基碳化矽基板2之SiC組成含量為63%，並選用焊料C組成配比時，在較低的荷重L為0.21kgf/cm2、燒結溫度為580℃進行熱壓接合，其接合面效果判定為良好，但是在燒結溫度降低至510℃，荷重L不變時，其接合面效果判定皆為不良，所以本發明實施例之活性金屬焊料3三種不 同的焊料組成，可搭配SiC組成含量為介於50%~83%之鋁基碳化矽基板2進行選用，並通過調整其熱壓接合製程之荷重L及燒結溫度，均可適用於本發明之複合基板。 In addition, according to the results of the joint surface effect judgment of Examples 8-10, it can be found that when the SiC composition content of the aluminum-based silicon carbide substrate 2 is 63%, and the composition ratio of the solder C is selected, the load L is 0.21 kgf/cm 2 and a sintering temperature of 580°C for hot-compression bonding, the joint surface effect is judged to be good, but when the sintering temperature is lowered to 510°C and the load L does not change, the joint surface effect is judged to be bad, so the present invention The active metal solder 3 of the embodiment has three different solder compositions, which can be selected with an aluminum-based silicon carbide substrate 2 with a SiC composition content of between 50% and 83%, and the load L and sintering temperature of the hot-press bonding process can be adjusted. , Can be applied to the composite substrate of the present invention.

當本發明之複合基板在上層陶瓷基板1搭載或封裝有晶片、半導體或功率器件等熱源時，可通過陶瓷基底先吸收熱源及銅金屬線路所產生之熱量，並經由活性金屬焊料3快速熱傳導至下層鋁基碳化矽基板2進行吸收，再釋放至外界，由於本實施例選用之活性金屬焊料3的熱阻值均較傳統接合使用之樹脂低的許多，所以對熱的傳導效果更佳，並以具有適當SiC組成之鋁基碳化矽基板2取代鋁金屬基板，不需進行金屬化表面處理(如表面電鍍銅、化學鍍鎳等)，就可以通過活性金屬焊料3與陶瓷基板1直接熱壓接合，最終形成一整體散熱效果佳且連續緻密之接合界面，不僅可簡化複合基板製程，並提高接合的強度與良率，使成本更加便宜，同時可提高散熱效果及耐衝擊強度，相較傳統複合基板對於抵抗衝擊負荷和承受震動等機械性質及產品可靠度等，都有顯著優越的表現，也更加適用於車用領域。 When the composite substrate of the present invention is mounted or packaged with a heat source such as a chip, semiconductor or power device on the upper ceramic substrate 1, the heat generated by the heat source and copper metal circuit can be first absorbed through the ceramic substrate, and the heat is quickly transferred to the active metal solder 3 The lower aluminum-based silicon carbide substrate 2 absorbs and then releases to the outside. Since the thermal resistance value of the active metal solder 3 selected in this embodiment is much lower than that of the resin used in traditional bonding, it has a better heat conduction effect, and Replace the aluminum metal substrate with an aluminum-based silicon carbide substrate 2 with appropriate SiC composition. It does not require metalized surface treatment (such as surface electroplating, electroless nickel plating, etc.), and it can be directly hot-pressed with active metal solder 3 and ceramic substrate 1 The bonding finally forms a continuous and dense bonding interface with good overall heat dissipation effect, which not only simplifies the manufacturing process of the composite substrate, but also improves the bonding strength and yield, making the cost cheaper, and at the same time, it can improve the heat dissipation effect and impact resistance, compared with the traditional The composite substrate has a significantly superior performance in terms of resistance to shock load and endurance of vibration and other mechanical properties and product reliability, and it is also more suitable for automotive applications.

是以，本發明主要提供一種複合基板係以具有適當含量佔比的SiC組成之鋁基碳化矽基板2取代鋁金屬基板，並利用其具有高耐熱及低熱膨脹特性，當承受高溫熱壓時，就可以通過活性金屬焊料3直接與陶瓷基板1共同壓合形成緻密之接合界面，最終形成一無任何介面縫隙或介面剝離之複合基板，且該活性金屬焊料係選自銀、銅、鈦、鋅及鋁所組成的群組之任一，由於複合基板之接合界面未含有樹脂，熱傳導效果更佳，可減少熱量蓄積於陶瓷基板上，整體之散熱效果更為良好；另，接合界 面缺乏金屬化表面處理含有複雜化學組成、收縮膨脹等變異因素所引發界面接合力差、緻密性不良等問題，相較傳統複合基板常見因為熱膨脹變形所引發介面縫隙或界面剝離，更能有效提高其耐衝擊的強度，對於抵抗衝擊和震動等機械性質及產品可靠度等，都有優越的表現。 Therefore, the present invention mainly provides a composite substrate that replaces the aluminum metal substrate with an aluminum-based silicon carbide substrate 2 composed of SiC with an appropriate content, and utilizes its high heat resistance and low thermal expansion characteristics. When it is subjected to high temperature hot pressing, The active metal solder 3 can be directly pressed together with the ceramic substrate 1 to form a dense joint interface, and finally a composite substrate without any interface gap or interface peeling is formed, and the active metal solder is selected from silver, copper, titanium, and zinc. For any of the group consisting of aluminum and aluminum, since the bonding interface of the composite substrate does not contain resin, the heat conduction effect is better, which can reduce the heat accumulation on the ceramic substrate, and the overall heat dissipation effect is better; in addition, the bonding interface Surface lack of metallization. Surface treatment contains complex chemical composition, shrinkage and expansion and other variable factors that cause problems such as poor interface bonding and poor compactness. Compared with traditional composite substrates, the interface gap or interface peeling caused by thermal expansion and deformation can be more effectively improved. Its impact resistance strength has excellent performance in resisting mechanical properties such as impact and vibration and product reliability.

上述詳細說明為針對本發明一種較佳之可行實施例說明而已，惟該實施例並非用以限定本發明之申請專利範圍，凡其他未脫離本發明所揭示之技藝精神下所完成之均等變化與修飾變更，均應包含於本發明所涵蓋之專利範圍中。 The above detailed description is only for a preferred and feasible embodiment of the present invention, but the embodiment is not intended to limit the scope of the patent application of the present invention. All other equal changes and modifications made without departing from the spirit of the technique disclosed in the present invention All changes shall be included in the scope of patent covered by the present invention.

綜上所述，本發明上述之複合基板於使用時為確實能達到其功效及目的，故本發明之複合基板誠為一實用性優異之發明，為符合發明專利之申請要件，爰依法提出申請，盼 鈞局審委能夠早日賜准本案，以保障發明人之辛苦發明，倘若 審委有任何的稽疑，請不吝來函指示，發明人定當竭力配合，實感德便。 In summary, the above-mentioned composite substrate of the present invention can indeed achieve its effects and purposes when used. Therefore, the composite substrate of the present invention is an invention with excellent practicability. In order to meet the requirements of an invention patent, an application is filed according to law. The review committee of the Panjun Bureau can grant the approval of this case as soon as possible to protect the inventor’s hard work. If the review committee has any doubts, please feel free to write instructions. The inventor will do his best to cooperate.

1:陶瓷基板 1: ceramic substrate

2:鋁基碳化矽基板 2: Aluminum-based silicon carbide substrate

3:活性金屬焊料 3: Active metal solder

Claims (8)

一種複合基板，包括上下層疊之陶瓷基板及鋁基碳化矽基板，並於該陶瓷基板與該鋁基碳化矽基板之間係含有活性金屬焊料所形成之一接合面，該鋁基碳化矽基板係含有體積百分比為50~83vol%的碳化矽(SiC)組成，該活性金屬焊料係選自銀(Ag)、銅(Cu)、鈦(Ti)、鋅(Zn)及鋁(Al)所組成的群組之任一，且該活性金屬焊料含有體積百分比為70vol%的Ag、28vol%的Cu及2vol%的Ti。 A composite substrate includes a ceramic substrate and an aluminum-based silicon carbide substrate stacked up and down, and a joint surface formed by active metal solder is contained between the ceramic substrate and the aluminum-based silicon carbide substrate. The aluminum-based silicon carbide substrate is Containing 50~83vol% of silicon carbide (SiC) composition, the active metal solder is selected from the group consisting of silver (Ag), copper (Cu), titanium (Ti), zinc (Zn) and aluminum (Al) Any one of the group, and the active metal solder contains 70 vol% Ag, 28 vol% Cu, and 2 vol% Ti. 一種複合基板，包括上下層疊之陶瓷基板及鋁基碳化矽基板，並於該陶瓷基板與該鋁基碳化矽基板之間係含有活性金屬焊料所形成之一接合面，該鋁基碳化矽基板係含有體積百分比為50~83vol%的碳化矽(SiC)組成，該活性金屬焊料係選自銀(Ag)、銅(Cu)、鈦(Ti)、鋅(Zn)及鋁(Al)所組成的群組之任一，且該活性金屬焊料含有體積百分比為10vol%的Ag、85vol%的Cu及5vol%的Ti。 A composite substrate includes a ceramic substrate and an aluminum-based silicon carbide substrate stacked up and down, and a joint surface formed by active metal solder is contained between the ceramic substrate and the aluminum-based silicon carbide substrate. The aluminum-based silicon carbide substrate is Containing 50~83vol% of silicon carbide (SiC) composition, the active metal solder is selected from the group consisting of silver (Ag), copper (Cu), titanium (Ti), zinc (Zn) and aluminum (Al) Any one of the group, and the active metal solder contains 10 vol% Ag, 85 vol% Cu, and 5 vol% Ti. 一種複合基板，包括上下層疊之陶瓷基板及鋁基碳化矽基板，並於該陶瓷基板與該鋁基碳化矽基板之間係含有活性金屬焊料所形成之一接合面，該鋁基碳化矽基板係含有體積百分比為50~83vol%的碳化矽(SiC)組成，該活性金屬焊料係選自銀(Ag)、銅(Cu)、鈦(Ti)、鋅(Zn)及鋁(Al)所組成的群組之任一，且該活性金屬焊料含有體積百分比為80vol%的Zn及20vol%的Al。 A composite substrate includes a ceramic substrate and an aluminum-based silicon carbide substrate stacked up and down, and a joint surface formed by active metal solder is contained between the ceramic substrate and the aluminum-based silicon carbide substrate. The aluminum-based silicon carbide substrate is Containing 50~83vol% of silicon carbide (SiC) composition, the active metal solder is selected from the group consisting of silver (Ag), copper (Cu), titanium (Ti), zinc (Zn) and aluminum (Al) Any one of the group, and the active metal solder contains 80 vol% Zn and 20 vol% Al. 如請求項1~3任一項所述之複合基板，其中該陶瓷基板包含陶瓷基底及該陶瓷基底至少一側表面上形成之金屬層結構。 The composite substrate according to any one of claims 1 to 3, wherein the ceramic substrate comprises a ceramic base and a metal layer structure formed on at least one surface of the ceramic base. 如請求項4所述之複合基板，其中該陶瓷基底材料為氮化矽 (Si3N4)、氮化鉭(TaN)、氮化鋁(AlN)、氧化鈹(BeO)、氧化鋁(Al2O4)或碳化矽(SiC)。 The composite substrate according to claim 4, wherein the ceramic base material is silicon nitride (Si 3 N 4 ), tantalum nitride (TaN), aluminum nitride (AlN), beryllium oxide (BeO), aluminum oxide (Al 2 O 4 ) or silicon carbide (SiC). 如請求項5所述之複合基板，其中該金屬層結構係在該陶瓷基底上表面附著有一銅金屬層，再蝕刻形成一銅金屬線路。 The composite substrate according to claim 5, wherein the metal layer structure is formed by attaching a copper metal layer on the upper surface of the ceramic substrate, and then etching to form a copper metal circuit. 如請求項1~3任一項所述之複合基板，其中該鋁基碳化矽基板含有體積百分比為63vol%的SiC組成。 The composite substrate according to any one of claims 1 to 3, wherein the aluminum-based silicon carbide substrate contains 63 vol% SiC composition. 如請求項1~3任一項所述之複合基板，其中該活性金屬焊料所形成之接合面係通過熱壓接合形成。 The composite substrate according to any one of claims 1 to 3, wherein the bonding surface formed by the active metal solder is formed by thermocompression bonding.
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TW201934523A (en) * 2018-02-14 2019-09-01 日商三菱綜合材料股份有限公司 Method of manufacturing ceramic/Al-SiC composite material bonded body and method of manufacturing power module substrate with heat sink

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201934523A (en) * 2018-02-14 2019-09-01 日商三菱綜合材料股份有限公司 Method of manufacturing ceramic/Al-SiC composite material bonded body and method of manufacturing power module substrate with heat sink

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