TWI731884B - Glass substrate for display and manufacturing method thereof - Google Patents

Glass substrate for display and manufacturing method thereof Download PDF

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TWI731884B
TWI731884B TW105133269A TW105133269A TWI731884B TW I731884 B TWI731884 B TW I731884B TW 105133269 A TW105133269 A TW 105133269A TW 105133269 A TW105133269 A TW 105133269A TW I731884 B TWI731884 B TW I731884B
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glass substrate
glass
display
mass
content
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TW201714850A (en
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佐藤啓史
若林沙枝
中谷嘉孝
小林大介
似内佑輔
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日商Ａｇｃ股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
    • C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Surface Treatment Of Glass (AREA)
  • Glass Compositions (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本發明之目的在於提供一種於自吸附台剝離時不易產生剝離帶電之顯示器用玻璃基板及其製造方法。本發明之顯示器用玻璃基板係具有第1面及與該第1面相反側之第2面者，且上述第1面具有開口之複數個孔，上述孔之平均開口面積為1.70×104 nm2 以下，上述孔之合計開口面積為6.00×106 nm2 /25 μm2 以上。The object of the present invention is to provide a glass substrate for a display that is less likely to generate peeling charge when peeling from an adsorption table, and a manufacturing method thereof. The glass substrate for a display of the present invention has a first surface and a second surface opposite to the first surface, and the first surface has a plurality of holes with openings, and the average opening area of the holes is 1.70×10 4 nm 2 or less, the total opening area of the above-mentioned holes is 6.00×10 6 nm 2 /25 μm 2 or more.

Description

顯示器用玻璃基板及其製造方法Glass substrate for display and manufacturing method thereof

本發明係關於一種顯示器用玻璃基板及其製造方法。The invention relates to a glass substrate for a display and a manufacturing method thereof.

於電漿顯示面板(PDP)、液晶顯示裝置(LCD)、電致發光顯示器(ELD)、場發射顯示器(FED)等平板顯示器中，使用於玻璃基板上形成有透明電極、半導體元件等者作為基板。例如，於LCD(Liquid Crystal Display，液晶顯示器)中，使用於玻璃基板上形成有透明電極、TFT(Thin Film Transistor，薄膜電晶體)等者作為基板。 透明電極、半導體元件等在玻璃基板上之形成係於使玻璃基板藉由吸附而固定於吸附台上之狀態下進行。 然而，由於玻璃基板之表面較為平滑，故而玻璃基板牢固地貼附於吸附台，而變得難以使玻璃基板自吸附台剝離，若欲強行剝離，則會使玻璃基板破損。 又，於將形成有透明電極、半導體元件等之玻璃基板自吸附台剝離時，玻璃基板帶電。於產生玻璃基板之剝離帶電之情形時，會引起TFT等半導體元件之靜電破壞。 因此，進行對與吸附台接觸之側之玻璃基板之表面進行粗面化處理，減小玻璃基板與吸附台之接觸面積。若減小該接觸面積，則變得容易將玻璃基板自吸附台剝離。又，可抑制剝離帶電之產生，減少剝離帶電量。作為粗面化處理之方法，例如已知有將包含液體及研磨粒之漿料吹送至玻璃基板之一面，並且利用刷子對玻璃基板之表面進行研磨之方法(例如，參照專利文獻1)。 然而，於利用先前之方法進行粗面化處理之玻璃基板中，有無法充分抑制剝離帶電之產生，而引起半導體元件之靜電破壞之情形。又，因剝離帶電而使玻璃基板再次貼附於吸附台等，變得難以使玻璃基板自吸附台等剝離，若欲強行剝離，則有使玻璃基板破損之情況。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2001-343632號公報In flat panel displays such as plasma display panels (PDP), liquid crystal display devices (LCD), electroluminescence displays (ELD), and field emission displays (FED), it is used as a glass substrate with transparent electrodes, semiconductor elements, etc. Substrate. For example, in LCD (Liquid Crystal Display), a glass substrate with transparent electrodes, TFT (Thin Film Transistor, thin film transistor), etc. formed on a glass substrate is used as a substrate. The formation of transparent electrodes, semiconductor elements, etc. on the glass substrate is performed in a state where the glass substrate is fixed on the suction table by suction. However, since the surface of the glass substrate is relatively smooth, the glass substrate is firmly attached to the suction table, and it becomes difficult to peel the glass substrate from the suction table. If it is to be peeled off forcefully, the glass substrate may be damaged. In addition, when the glass substrate on which the transparent electrode, the semiconductor element, etc. are formed is peeled from the suction table, the glass substrate is charged. In the case of peeling and charging of the glass substrate, it will cause electrostatic destruction of semiconductor components such as TFT. Therefore, the surface of the glass substrate on the side in contact with the suction table is roughened to reduce the contact area between the glass substrate and the suction table. If the contact area is reduced, it becomes easy to peel the glass substrate from the suction table. In addition, the generation of peeling electrification can be suppressed, and the amount of peeling electrification can be reduced. As a method of roughening treatment, for example, a method in which a slurry containing a liquid and abrasive grains is blown onto one surface of a glass substrate, and the surface of the glass substrate is polished with a brush (for example, refer to Patent Document 1). However, in the glass substrate subjected to the roughening treatment by the previous method, the generation of peeling charge cannot be sufficiently suppressed, which may cause electrostatic destruction of the semiconductor element. In addition, the glass substrate is attached to the suction table or the like again due to the peeling electrification, and it becomes difficult to peel the glass substrate from the suction table or the like. If the glass substrate is to be peeled off forcibly, the glass substrate may be damaged. [Prior Art Document] [Patent Document] [Patent Document 1] Japanese Patent Laid-Open No. 2001-343632

[發明所欲解決之問題] 本發明提供一種於自吸附台進行剝離時不易產生剝離帶電之顯示器用玻璃基板及其製造方法。 [解決問題之技術手段] 本發明之顯示器用玻璃基板係具有第1面及與該第1面相反側之第2面者，其特徵在於：上述第1面具有開口之複數個孔，上述孔之平均開口面積為1.70×104 nm2 以下，上述孔之合計開口面積為6.00×106 nm2 /25 μm2 以上。 本發明之顯示器用玻璃基板較佳為玻璃組成以氧化物基準之質量%表示，SiO2 之含量為50～70質量%，Al2 O3 之含量為10～20質量%，B2 O3 之含量為0～15質量%，MgO之含量為0～10質量%，CaO之含量為0～20質量%，SrO之含量為0～20質量%，BaO之含量為0～20質量%，MgO、CaO、SrO、BaO之合計之含量為1～30質量%，且實質上不含有鹼金屬氧化物。 本發明之顯示器用玻璃基板較佳為上述第2面為形成電子構件之面，上述第1面為不形成電子構件之面。 本發明之顯示器用玻璃基板較佳為上述第1面之算術平均粗糙度Sa為0.30 nm以上。 本發明之顯示器用玻璃基板較佳為上述第1面及上述第2面為矩形狀，且1邊之長度為1 m以上。 本發明之顯示器用玻璃基板之製造方法之特徵在於：具有對具有第1面及與該第1面相反側之第2面之玻璃板之上述第1面進行玻璃蝕刻處理之步驟，且於進行上述玻璃蝕刻處理之步驟中，將於上述第1面開口之複數個孔以平均開口面積成為1.70×104 nm2 以下且合計開口面積成為6.00×106 nm2 /25 μm2 以上之方式形成。 本發明之顯示器用玻璃基板之製造方法較佳為於進行上述玻璃蝕刻處理之步驟之前，具有將上述玻璃板利用包含碳酸鈣之漿料進行洗淨之步驟。 本發明之顯示器用玻璃基板之製造方法較佳為上述玻璃蝕刻處理係利用包含氟化氫之氣體之蝕刻。 本發明之顯示器用玻璃基板之製造方法較佳為於上述利用包含氟化氫之氣體之蝕刻中，將包含氟化氫反應成分之氣體自反應氣體噴出口以0.07 m/sec噴出至蝕刻槽內，並自反應氣體排出口以0.07 m/sec排出，自反應氣體排出口排出之氣體與反應氣體排出口周邊之空氣一同以0.5 m/sec被吸引時之混合氣體中所含之氟化氫濃度為500 ppm～1500 ppm。 [發明之效果] 本發明之顯示器用玻璃基板於自吸附台進行剝離時不易產生剝離帶電。[Problem to be Solved by the Invention] The present invention provides a glass substrate for a display that is less likely to generate peeling charge when peeling from an adsorption table, and a manufacturing method thereof. [Technical Means for Solving the Problem] The glass substrate for a display of the present invention has a first surface and a second surface opposite to the first surface, and is characterized in that the first surface has a plurality of holes with openings, and the holes The average opening area is 1.70×10 4 nm 2 or less, and the total opening area of the above-mentioned holes is 6.00×10 6 nm 2 /25 μm 2 or more. The glass substrate for the display of the present invention preferably has a glass composition expressed by mass% on an oxide basis, the content of SiO 2 is 50 to 70% by mass, the content of Al 2 O 3 is 10 to 20% by mass, and the content of B 2 O 3 is The content is 0-15% by mass, the content of MgO is 0-10% by mass, the content of CaO is 0-20% by mass, the content of SrO is 0-20% by mass, the content of BaO is 0-20% by mass, MgO, The total content of CaO, SrO, and BaO is 1 to 30% by mass, and the alkali metal oxide is not substantially contained. In the glass substrate for a display of the present invention, it is preferable that the second surface is a surface where electronic components are formed, and the first surface is a surface where no electronic components are formed. In the glass substrate for a display of the present invention, it is preferable that the arithmetic mean roughness Sa of the first surface is 0.30 nm or more. In the glass substrate for a display of the present invention, it is preferable that the first surface and the second surface are rectangular, and the length of one side is 1 m or more. The method for manufacturing a glass substrate for a display of the present invention is characterized by having a step of performing glass etching treatment on the first surface of a glass plate having a first surface and a second surface opposite to the first surface, and In the glass etching process, the plurality of holes opened on the first surface are formed so that the average opening area becomes 1.70×10 4 nm 2 or less and the total opening area becomes 6.00×10 6 nm 2 /25 μm 2 or more . The manufacturing method of the glass substrate for a display of the present invention preferably has a step of washing the glass plate with a slurry containing calcium carbonate before performing the step of the glass etching treatment. In the method for manufacturing a glass substrate for a display of the present invention, it is preferable that the above-mentioned glass etching treatment is etching using a gas containing hydrogen fluoride. In the method for manufacturing the glass substrate for a display of the present invention, it is preferable that in the above-mentioned etching using a gas containing hydrogen fluoride, the gas containing the hydrogen fluoride reaction component is sprayed into the etching tank at 0.07 m/sec from the reaction gas ejection port, and reacts itself. The gas discharge port is discharged at 0.07 m/sec. The gas discharged from the reaction gas discharge port and the air around the reaction gas discharge port are sucked together at 0.5 m/sec. The concentration of hydrogen fluoride contained in the mixed gas is 500 ppm to 1500 ppm . [Effects of the Invention] The glass substrate for a display of the present invention is less likely to generate peeling charge when peeling from the adsorption table.

[顯示器用玻璃基板] 圖1係表示本發明之顯示器用玻璃基板之一實施形態之概略剖視圖。 本實施形態之顯示器用玻璃基板10具有第1面10a及與第1面10a相反側之第2面10b。顯示器用玻璃基板10係於第1面10a形成有複數個孔12者。孔12係以於顯示器用玻璃基板10之第1面10a開口之方式形成。 再者，為了便於說明，圖1中之孔12較實際更大地記載。 孔12係於顯示器用玻璃基板10之第1面10a開口。換言之，孔12係於第1面10a於顯示器用玻璃基板10之厚度方向上凹陷之微小之空間。 於顯示器用玻璃基板10之第1面10a，孔12係不規則地分散為島狀。又，複數個孔12之形狀不均勻(不整齊)，且其開口面積(於與顯示器用玻璃基板10之板厚方向垂直之平面進行俯視時之大小)亦不均勻(不整齊)。 孔12之平均開口面積為1.70×104 nm2 以下，較佳為3.00×103 nm2 ～1.65×104 nm2 。 所謂平均開口面積，係指俯瞰顯示器用玻璃基板10之第1面10a時之存在於特定區域之複數個開口之平均面積(平均開口面積＝(S1＋S2＋・・・＋Sn)/n。此處，S1、S2、・・・、Sn表示存在於特定區域之各開口之面積，n表示存在於特定區域之開口之數量)。藉由將平均開口面積設為上述數值範圍，而於將顯示器用玻璃基板10載置於吸附台等上之情形時，孔12內部與吸附台之接觸概率降低。即，顯示器用玻璃基板10與吸附台之接觸面積減小。 再者，孔12之平均開口面積係藉由下述之方法所測定之值。 又，孔12之合計開口面積為6.00×106 nm2 /25 μm2 以上，較佳為6.00×106 nm2 /25 μm2 ～1.80×107 nm2 /25 μm2 ，更佳為8.00×106 nm2 /25 μm2 ～1.80×107 nm2 /25 μm2 。 所謂合計開口面積，係指俯瞰顯示器用玻璃基板10之第1面10a時之存在於特定區域之複數個開口之合計面積(合計開口面積＝S1＋S2＋・・・＋Sn；此處，S1、S2、・・・、Sn表示存在於特定區域之各開口之面積，n表示存在於特定區域之開口之數量)。藉由將合計開口面積設為上述數值範圍，而於將顯示器用玻璃基板10載置於吸附台等上之情形時，顯示器用玻璃基板10與吸附台之接觸面積減小。 再者，孔12之合計開口面積係藉由下述之方法所測定之值。 若孔12之平均開口面積為1.70×104 nm2 以下，且孔12之合計開口面積為6.00×106 nm2 /25 μm2 以上，則於自吸附台將顯示器用玻璃基板10剝離時產生之剝離帶電量較少，容易將顯示器用玻璃基板10自吸附台剝離。 剝離帶電量較佳為-7200 V以上，更佳為-7150 V以上，進而較佳為‑7000 V以上，進而較佳為6800 V以上，進而較佳為-6500 V以上。若剝離帶電量較少，則顯示器用玻璃基板10變得容易剝離，變得不易破損。又，變得不易引起半導體元件之靜電破壞。 孔12之平均開口面積及合計開口面積係藉由下述之方法而求出。 首先，藉由原子力顯微鏡，觀察顯示器用玻璃基板10之第1面10a，取得孔12之形狀圖像。 於本實施形態中，孔12之形狀圖像係使用下述之原子力顯微鏡於下述之測定條件下取得。 原子力顯微鏡：Bruker公司製造之Dimension ICON 測定模式：輕敲(Tapping)模式 探針：RTESPA(彈簧常數：40 N/m) 樣品/線：512 掃描頻率：0.5 Hz 測定視野：5 μm×5 μm 測定部位：第1面10a之中心之1個部位 繼而，使用奈米尺度三維圖像處理軟體(Image Metorology公司製造之SPIP6.4.1)，實施利用原子力顯微鏡所取得之形狀圖像之調平處理、過濾處理及解析處理，算出孔12之平均開口面積及合計開口面積。詳細內容於以下敍述。 本實施形態之顯示器用玻璃基板10較佳為第1面10a之算術平均粗糙度Sa為0.30 nm～0.90 nm。若算術平均粗糙度Sa為0.3 nm以上，則可有效地減小帶電量。算術平均粗糙度Sa越大、帶電量越小。然而，若算術平均粗糙度Sa過大，則可見光透過率降低，故而算術平均粗糙度Sa較佳為0.9 nm以下。 算術平均粗糙度Sa係由DIN 4768所規定且將算術平均粗糙度Ra(於JIS B0601(2001年)中規定)擴張為面之參數。針對第1面10a之平均面，表示各點之高度之差之絕對值之平均。 顯示器用玻璃基板10之形狀並無特別限定，較佳為第1面10a及第2面10b為矩形狀。顯示器用玻璃基板10之尺寸雖無特限定，但於第1面10a及第2面10b為矩形狀時，其一邊之長度較佳為1 m以上，更佳為1.5 m以上，進而較佳為2 m以上。 一邊之長度越長、第1面10a之面積越大、帶電量亦越大。然而，藉由將第1面10a設為上述平均開口面積及上述合計開口面積，而即便一邊之長度為1 m以上之較大之尺寸，亦可減小帶電量。 顯示器用玻璃基板10之玻璃組成雖無特別限定，但於在第2面10b形成薄膜電晶體之情形時，就密接性或不良率降低之觀點而言，較佳為以氧化物基準之質量%表示，SiO2 之含量為50～70質量%，Al2 O3 之含量為10～20質量%，B2 O3 之含量為0～15質量%，MgO之含量為0～10質量%，CaO之含量為0～20質量%，SrO之含量為0～20質量%，BaO之含量為0～20質量%，MgO、CaO、SrO、BaO之合計之含量為1～30質量%，且實質上不含有鹼金屬氧化物。 無鹼玻璃係實質上不含有鹼金屬氧化物(Na2 O、K2 O、Li2 O)之玻璃。無鹼玻璃中之Na2 O、K2 O、Li2 O等鹼金屬氧化物之合計之含量例如亦可為0.1質量%以下。 關於無鹼玻璃，於考慮應變點較高及熔解性之情形時，較佳為以氧化物基準之質量%表示，SiO2 之含量為58～66質量%，Al2 O3 之含量為15～22質量%，B2 O3 之含量為5～12質量%，MgO之含量為0～8質量%，CaO之含量為0～9質量%，SrO之含量為3～12.5質量%，BaO之含量為0～2質量%，MgO、CaO、SrO、BaO之合計之含量為9～18質量%。 關於無鹼玻璃，於考慮高應變點之情形時，較佳為以氧化物基準之質量%表示，SiO2 之含量為54～73質量%，Al2 O3 之含量為10.5～22.5質量%，B2 O3 之含量為0～5.5質量%，MgO之含量為0～10質量%，CaO之含量為0～9質量%，SrO之含量為0～16質量%，BaO之含量為0%～2.5%，MgO、CaO、SrO、BaO之合計之含量為8～26質量%。 根據本實施形態之顯示器用玻璃基板1，由於第1面10a具有開口之複數個孔12，且孔12之平均開口面積為1.70×104 nm2 以下，孔12之合計開口面積為6.00×106 nm2 /25 μm2 以上，故而於將顯示器用玻璃基板10載置於吸附台等上之情形時，兩者之接觸面積較小，相互摩擦而帶電之量(帶電量)較少，其結果為，容易將顯示器用玻璃基板10自吸附台等剝離。 [顯示器用玻璃基板之製造方法] 本實施形態之顯示器用玻璃基板之製造方法具有：將具有第1面11a及與第1面11a相反側之第2面11b之玻璃板11利用包含碳酸鈣之漿料進行洗淨之步驟；及對玻璃板11之第1面11a進行玻璃蝕刻處理之步驟。 以下，將於玻璃板11中成為顯示器用玻璃基板10之第1面10a之側之面稱為11a，將成為顯示器用玻璃基板10之第2面10b之側之面稱為11b。 於本實施形態之顯示器用玻璃基板之製造方法中，較佳為藉由浮式法成形玻璃板11。 詳細而言，將玻璃板11藉由浮式法而成形為帶狀後，將該帶狀之玻璃板11切斷為所需尺寸，進而將端面進行倒角。 繼而，較佳為將玻璃板11之第2面11b利用包含氧化鈰之漿料進行研磨。 該進行研磨之步驟中所使用之氧化鈰之平均粒徑較佳為0.3 μm～10 μm，更佳為0.5 μm～3 μm。 又，包含氧化鈰之漿料中之氧化鈰之含量較佳為0.5質量%～10質量%，更佳為0.5質量%～7質量%。 繼而，於藉由包含氧化鈰之漿料之研磨結束後，將玻璃板11利用淋浴洗淨，用水沖洗迴繞至玻璃板11之第2面11b之漿料及玻璃板11之第1面11a之漿料。 繼而，將玻璃板11之第1面11a、較佳為第1面11a及第2面11b，利用包含碳酸鈣之漿料進行洗淨。 於該洗淨步驟中，為了將未能利用淋浴洗淨去除之包含氧化鈰之漿料去除，一面將包含碳酸鈣之漿料噴出至玻璃板11一面利用刷子洗淨。 該藉由包含碳酸鈣之漿料之洗淨係相對於作為化學機械研磨之藉由包含氧化鈰之漿料之研磨，以機械研磨為主。藉由對殘存於第2面11b及/或自第2面11b迴繞至第1面11a之包含氧化鈰之漿料、或存在於第1面11a上之污垢等之物理碰撞等，而自玻璃板11之第1面11a及/或第2面11b將包含氧化鈰之漿料或污垢去除，並洗淨。 作為刷子之形態，較佳為圓盤刷之形態，但亦可使用輥刷等形態。 包含碳酸鈣之漿料係將碳酸鈣分散於水、有機溶劑等溶劑中之分散液。 該包含碳酸鈣之漿料中所使用之碳酸鈣之平均粒徑較佳為0.3 μm～10 μm，更佳為0.5 μm～3 μm。 又，包含碳酸鈣之漿料中之碳酸鈣之含量較佳為1質量%～15質量%，更佳為1質量%～10質量%。 包含碳酸鈣之漿料由於對玻璃板11之研磨能力較低，故而可於保持玻璃板11之第2面11b之表面狀態之同時，自玻璃板11之第2面11b與第1面11a將包含氧化鈰之漿料去除。 繼而，較佳為於利用包含碳酸鈣之漿料進行洗淨之步驟結束後，將玻璃板11經由利用高壓淋浴進行洗淨之步驟、利用洗劑進行洗淨之步驟、利用高壓淋浴進行洗淨之步驟、利用純水進行洗淨之步驟、利用高壓淋浴進行洗淨之步驟、進行純水淋浴洗淨之步驟，並利用乾燥步驟進行處理。 繼而，對玻璃板11之第1面11a進行玻璃蝕刻處理。 於進行該玻璃蝕刻處理之步驟中，將於玻璃板11之第1面11a開口之複數個孔12以平均開口面積成為1.70×104 nm2 以下且合計開口面積成為6.00×106 nm2 /25 μm2 以上之方式形成。 作為蝕刻槽，使用設置有用以將反應氣體導入至蝕刻槽內之反應氣體噴出口、與用以自蝕刻槽內排出反應氣體之反應氣體排出口者。反應氣體噴出口係寬度為2 mm、長度為可將反應氣體噴出至蝕刻槽內之大小之狹縫。反應氣體排出口係長度與反應氣體噴出口相等之複數個狹縫隔開間隔而並列形成者。反應氣體排出口整體之寬度係17 mm。反應氣體噴出口係朝向玻璃板11之第1面11a。 於本實施形態之顯示器用玻璃基板之製造方法中，自反應氣體噴出口以0.07 m/sec將包含氟化氫反應成分之氣體噴出至蝕刻槽內，並以0.07 m/sec自反應氣體排出口排出。自反應氣體排出口排出之氣體係與反應氣體排出口周邊之空氣一同以0.5 m/sec被吸引而成為混合氣體。混合氣體中所含之氟化氫濃度較佳為500 ppm～1500 ppm，更佳為600 ppm～1000 ppm。藉由將混合氣體之濃度設為上述範圍，而於玻璃板11之第1面11a開口之複數個孔12之平均開口面積及合計開口面積容易成為上述範圍。 換言之，於進行玻璃蝕刻處理之步驟中，無論反應氣體之噴出量、排出量、及吸引量如何，混合氣體中所含之氟化氫濃度均較佳為混合氣體之濃度成為上述範圍之濃度。 進行玻璃蝕刻處理之步驟較佳為於常溫、常壓下進行。 反應氣體較佳為於與進行玻璃蝕刻處理之槽(以下，稱為「蝕刻槽」)不同之電漿處理槽中，藉由大氣壓電漿處理而產生。例如，可藉由將作為原料氣體之四氟化碳於水蒸氣之存在下進行大氣壓電漿處理，而產生作為反應氣體之氟化氫。作為載氣，可使用氮氣等惰性氣體。可藉由將所產生之反應氣體經由配管，自設置於蝕刻槽內之噴嘴朝向玻璃板11之第1面11a進行吹送，而進行玻璃蝕刻。 蝕刻槽中之反應氣體之濃度與壓力可藉由對電漿處理槽之原料氣體之供給量、水分之供給量、電漿處理之放電電力等而進行調整。 於蝕刻槽中，為了連續地進行處理，較佳為設置基板搬入口與基板排出口。又，較佳為設置將玻璃板11自基板搬入口搬送至基板排出口之搬送機構。於該情形時，吹送反應氣體之噴嘴係設置於自基板搬入口至基板排出口之搬送玻璃板11之路徑上。 其後，將玻璃板11利用純水洗淨，並乾燥，而獲得顯示器用玻璃基板10，並對所獲得之顯示器用玻璃基板10進行檢查。 再者，於本實施形態中，對在進行玻璃蝕刻處理之步驟之前，進行藉由浮式法而製造玻璃板11之步驟、利用包含氧化鈰之漿料進行研磨之步驟、利用包含碳酸鈣之漿料進行洗淨之步驟之全部之態樣進行了說明，但於本發明之顯示器用玻璃基板之製造方法中進行玻璃蝕刻處理之步驟以外之步驟為任意。 例如，亦可自第三者購入至利用包含氧化鈰之漿料進行研磨之步驟為止之處理結束之玻璃板11，僅進行利用包含碳酸鈣之漿料進行洗淨之步驟與進行玻璃蝕刻處理之步驟。又，亦可自第三者購入至利用碳酸鈣進行洗淨之步驟為止之處理結束之玻璃板11，僅進行進行玻璃蝕刻處理之步驟。又，進行蝕刻處理之玻璃板11亦可為不經由利用包含氧化鈰之漿料進行研磨之步驟之玻璃板。 根據本實施形態之顯示器用玻璃基板之製造方法，具有對玻璃板11之第1面11a進行玻璃蝕刻處理之步驟，於進行玻璃蝕刻處理之步驟中，將於第1面11a開口之複數個孔12以平均開口面積成為1.70×104 nm2 以下且合計開口面積成為6.00×106 nm2 /25 μm2 以上之方式形成，故而於載置於吸附台等上之情形時，對吸附台等之接觸面積較少，於吸附台摩擦而帶電之量(帶電量)較少，結果為，獲得容易自吸附台等剝離之顯示器用玻璃基板10。 [實施例] 以下，藉由實施例及比較例更具體地說明本發明，但本發明並不限定於以下之實施例。 [實施例1] 一面搬送藉由浮式法所獲得且對第2面之藉由氧化鈰之研磨結束之長度520 mm×寬度410 mm×厚度0.50 mm之玻璃板(商品名：AN100，旭硝子公司製造)，一面將使碳酸鈣分散於水中所製備之漿料洗淨用之漿料噴出至玻璃板之第1面及第2面，並利用圓盤刷進行洗淨。 碳酸鈣之濃度係設為於漿料(100質量%)中為3.0質量%。 作為碳酸鈣，使用平均粒徑為1 μm者。 將玻璃板之搬送速度設為10 m/min。 繼而，將藉由碳酸鈣之漿料之洗淨結束之玻璃板之第1面利用洗劑與純水進行洗淨，並利用氣刀使玻璃板乾燥。 繼而，將藉由純水之洗淨處理結束之玻璃板之第1面利用氟化氫進行玻璃蝕刻處理。 作為蝕刻槽，使用設置有用以將反應氣體導入至蝕刻槽內之反應氣體噴出口、與用以自蝕刻槽內排出反應氣體之反應氣體排出口者。反應氣體噴出口係寬度為2 mm、長度為可將反應氣體噴出至蝕刻槽內之大小之狹縫。反應氣體排出口係長度與反應氣體噴出口相等之複數個狹縫隔開間隔而並列形成者。反應氣體排出口整體之寬度為17 mm。 於本實施例中，自反應氣體噴出口以0.07 m/sec將包含氟化氫反應成分之氣體噴出至蝕刻槽內，並以0.07 m/sec自反應氣體排出口排出。自反應氣體排出口所排出之氣體係與反應氣體排出口周邊之空氣一同以0.5 m/sec被吸引而成為混合氣體。以混合氣體中所含之氟化氫濃度成為500 ppm之方式進行調整，蝕刻槽中之氟化氫之壓力與溫度係設為常溫、常壓。 氟化氫係以四氟化碳作為原料氣體並於水蒸氣之存在下藉由電漿處理而產生。作為載氣，使用氮氣。 繼而，將玻璃蝕刻處理結束之玻璃板藉由純水進行洗淨，並乾燥，而獲得實施例1之玻璃基板。 於所獲得之玻璃基板之第1面，如圖2所示般形成複數個孔。再者，於圖2中，顏色較濃之部分表示孔。又，看起來呈直線狀之傷痕係由在藉由氧化鈰之研磨時迴繞之氧化鈰所形成之傷痕。該傷痕係包含於下述之平均開口面積及合計開口面積。 [實施例2] 於玻璃蝕刻處理中，以混合氣體中所含之氟化氫濃度成為850 ppm之方式調整，除此以外，以與實施例1相同之方式獲得實施例2之玻璃基板。 於所獲得之玻璃基板之第1面，如圖3所示般形成複數個孔。 [實施例3] 於玻璃蝕刻處理中，以混合氣體中所含之氟化氫濃度成為700 ppm之方式進行調整，除此以外，以與實施例1相同之方式獲得實施例3之玻璃基板。 於所獲得之玻璃基板之第1面，如圖4所示般形成複數個孔。 [比較例1] 一面搬送與實施例1中所使用者相同之玻璃板(商品名：AN100，旭硝子公司製造)，一面將使氧化鈰分散於水中所製備之漿料洗淨用之漿料噴出至玻璃板之第1面，並將玻璃基板之第1面利用圓盤刷進行洗淨。 氧化鈰之濃度係設為於漿料(100質量%)中為7.0質量%。 作為氧化鈰，使用平均粒徑為1 μm者。 將玻璃板之搬送速度設為10 m/min。 繼而，將藉由氧化鈰之漿料之洗淨結束之玻璃板之第1面利用洗劑與純水洗淨，並利用氣刀使玻璃板乾燥，獲得比較例1之玻璃基板。 於所獲得之玻璃基板之第1面，如圖5所示般形成因藉由氧化鈰之漿料之洗淨所產生之複數個孔。 [比較例2] 一面搬送與實施例1中所使用者相同之玻璃板(商品名：AN100，旭硝子公司製造)，一面將使氧化鈰分散於水中所製備之漿料洗淨用之漿料噴出至玻璃基板之第1面，並將玻璃板之第1面利用圓盤刷進行洗淨。 氧化鈰之濃度係設為於漿料(100質量%)中為7.0質量%。 作為氧化鈰，使用平均粒徑為1 μm者。 將玻璃板之搬送速度設為10 m/min。 繼而，將利用氧化鈰之漿料之洗淨結束之玻璃板之第1面利用洗劑與純水洗淨，並利用氣刀使玻璃板乾燥。 繼而，將利用純水之洗淨處理結束之玻璃板之第1面利用氟化氫進行玻璃蝕刻處理。於玻璃蝕刻處理中，以混合氣體中所含之氟化氫濃度成為700 ppm之方式進行調整，除此以外，以與實施例1相同之方式獲得比較例2之玻璃基板。 於所獲得之玻璃板之第1面，如圖6所示般形成複數個孔。 [比較例3] 一面搬送與實施例1中所使用者相同之玻璃板(商品名：AN100，旭硝子公司製造)，將使碳酸鈣分散於水中所製備之漿料洗淨用之漿料噴出至玻璃板之第1面，並利用圓盤刷進行洗淨。 碳酸鈣之濃度係設為於漿料(100質量%)中為3.0質量%。 作為碳酸鈣，使用平均粒徑為1 μm者。 將玻璃基板之搬送速度設為10 m/min。 繼而，將藉由碳酸鈣之漿料之洗淨結束之玻璃板之第1面利用洗劑與純水洗淨，並利用氣刀使玻璃板乾燥，獲得比較例3之玻璃基板。 所獲得之玻璃基板之第1面係如圖7所示般與實施例或其他比較例相比略微缺乏平坦性，形成因藉由碳酸鈣之漿料之洗淨所產生之複數個孔。 [玻璃基板之孔之平均開口面積及合計開口面積測定] 針對實施例1～3及比較例1～3中所獲得之玻璃基板，藉由原子力顯微鏡(AFM)，觀察玻璃基板之第1面，取得孔之形狀圖像後，使用圖像解析軟體(Image Metorology公司製造之SPIP6.4.1)，算出孔之平均開口面積及合計開口面積。 原子力顯微鏡及測定條件係如下所述。 原子力顯微鏡：Bruker公司製造之Dimension ICON 測定模式：Tapping模式 探針：RTESPA(彈簧常數：40 N/m) 樣品/線：512 掃描頻率：0.5 Hz 測定視野：5 μm×5 μm 測定部位：第1面(10a)之中心之1個部位 又，將使用圖像解析軟體之孔之平均開口面積及合計開口面積之算出順序設為如下所述。 順序1：調平處理(實行「每條線之調平」及「整體面之調平」；其後，使圖像旋轉90°，再次實行「每條線之調平」及「整體面之調平」) 順序2：過濾處理1(根據中央值(中值)之窗口，選擇或輸入：無指向性雜訊、高低值、置換之比率：2、窗口尺寸：5，使“包含邊界”有效，並應用) 順序3：過濾處理2(根據捲積之窗口，選擇或輸入：平滑化、高斯分佈、標準偏差：1，使“X＝Y”及“自動尺寸”有效，並應用) 順序4：粒子、孔解析(首先，根據檢測出之窗口，選擇或輸入：分支線-分散之形狀、孔檢測、分類之平穩範圍：±0.50、過濾器尺寸之平滑化：2.00像素；繼而，根據後處理之窗口，使“保存形狀之孔”、“像素雜訊之抑制”、“包含影像端之形狀”；最後，點擊檢測，求出孔之平均面積及合計面積) 將結果示於表1。 [玻璃基板之算術平均粗糙度Sa測定] 針對實施例1～3及比較例1～3中所獲得之玻璃基板，測定該第1面之算術平均粗糙度Sa(nm)。 算術平均粗糙度Sa係藉由於DIN 4768中規定且藉由原子力顯微鏡(AFM)測定各點之5 μm×5 μm之測定區域而求出。將結果示於表1。 [玻璃基板之帶電量] 測定實施例1～3及比較例1～3中所獲得之玻璃基板之剝離帶電量。測定方法係首先保持玻璃基板之緣部，使第1面與不鏽鋼製(SUS304)之真空吸附台對向。繼而，使玻璃基板於真空吸附台之吸附、釋放之1重複110次。最後，藉由利用表面電位計(MODEL 320C，TREK JAPAN公司製造)測定將玻璃基板自台提起時之帶電量，而測定剝離帶電量(V)。玻璃基板之第1面與表面電位計之探針之間隔為30 mm。將結果示於表1。 又，將玻璃基板之孔之合計開口面積(nm2 /25 μm2 )與玻璃基板之剝離帶電量(V)之關係示於圖8。 [表1]

Figure 105133269-A0304-0001
由表1及圖8之結果可知，藉由滿足玻璃基板之孔之平均開口面積與合計開口面積之兩者之條件，可降低剝離帶電量。其原因考慮為：與藉由氧化鈰之洗淨相比，藉由碳酸鈣之洗淨者係於保持玻璃基板之表面狀態之同時進行洗淨。即，於藉由氧化鈰之洗淨之情形時，由於研磨能力較高，故而玻璃基板之第1面表層之容易被蝕刻之部分被削掉，另一方面，於藉由碳酸鈣之洗淨之情形時，玻璃基板之第1面表層之容易被蝕刻之部分殘留，僅將污垢去除。因此，可考察容易藉由蝕刻而使孔打開者。又，亦考慮為由於在藉由碳酸鈣之洗淨之情形時，容易將自第2面迴繞至第1面之使用包含氧化鈰之漿料之研磨中之化學副產物(凝膠狀二氧化矽等)去除。 上文詳細且參照特定之實施態樣說明了本發明，但對於業者可明確，可於不脫離本發明之精神與範圍之情況下添加各種變更或修正。本申請案係基於在2015年10月15日提出申請之日本專利申請(日本專利特願2015-203881)者，並將其內容作為參照而併入至本文中。 [產業上之可利用性] 本發明之顯示器用玻璃基板係作為電漿顯示面板(PDP)、液晶顯示裝置(LCD)、電致發光顯示器(ELD)、場發射顯示器(FED)等顯示器之基板而有用。[Glass substrate for display] Fig. 1 is a schematic cross-sectional view showing an embodiment of the glass substrate for display of the present invention. The glass substrate 10 for a display of this embodiment has the 1st surface 10a and the 2nd surface 10b on the opposite side to the 1st surface 10a. The glass substrate 10 for a display is one in which a plurality of holes 12 are formed on the first surface 10a. The hole 12 is formed so as to open on the first surface 10a of the glass substrate 10 for a display. Furthermore, for the convenience of description, the hole 12 in FIG. 1 is described as being larger than actual. The hole 12 is opened on the first surface 10a of the glass substrate 10 for a display. In other words, the hole 12 is a tiny space recessed in the thickness direction of the glass substrate 10 for a display on the first surface 10a. On the first surface 10a of the glass substrate 10 for a display, the holes 12 are irregularly dispersed into islands. In addition, the shapes of the plurality of holes 12 are uneven (uneven), and the opening area (the size when viewed from a plane perpendicular to the thickness direction of the glass substrate 10 for a display) is also uneven (uneven). The average opening area of the holes 12 is 1.70×10 4 nm 2 or less, preferably 3.00×10 3 nm 2 to 1.65×10 4 nm 2 . The so-called average opening area refers to the average area of a plurality of openings existing in a specific area when looking down on the first surface 10a of the glass substrate 10 for a display (average opening area = (S1 + S2 +... +Sn)/n. Here, S1 , S2, ..., Sn represent the area of each opening that exists in a specific area, and n represents the number of openings that exist in a specific area). By setting the average opening area in the above-mentioned numerical range, when the glass substrate 10 for a display is placed on a suction table or the like, the probability of contact between the inside of the hole 12 and the suction table is reduced. That is, the contact area between the glass substrate 10 for a display and the suction table is reduced. Furthermore, the average opening area of the hole 12 is a value measured by the following method. In addition, the total opening area of the holes 12 is 6.00×10 6 nm 2 /25 μm 2 or more, preferably 6.00×10 6 nm 2 /25 μm 2 ～1.80×10 7 nm 2 /25 μm 2 , more preferably 8.00 ×10 6 nm 2 /25 μm 2 ～1.80×10 7 nm 2 /25 μm 2 . The total opening area refers to the total area of a plurality of openings existing in a specific area when the first surface 10a of the glass substrate 10 for a display is overlooked (total opening area = S1 + S2 + ... + Sn; here, S1, S2, ...・・, Sn represents the area of each opening that exists in a specific area, n represents the number of openings that exist in a specific area). By setting the total opening area in the above numerical range, when the glass substrate 10 for a display is placed on a suction table or the like, the contact area between the glass substrate 10 for a display and the suction table is reduced. In addition, the total opening area of the holes 12 is a value measured by the following method. If the average opening area of the holes 12 is 1.70×10 4 nm 2 or less, and the total opening area of the holes 12 is 6.00×10 6 nm 2 /25 μm 2 or more, it will occur when the glass substrate 10 for display is peeled off from the adsorption stage The peeling charge amount is small, and the glass substrate 10 for the display can be easily peeled from the adsorption table. The peel charge amount is preferably -7200 V or more, more preferably -7150 V or more, still more preferably -7000 V or more, still more preferably 6800 V or more, and still more preferably -6500 V or more. If the peeling charge amount is small, the glass substrate 10 for a display becomes easy to peel, and it becomes hard to break. In addition, it becomes less likely to cause electrostatic destruction of the semiconductor element. The average opening area and total opening area of the holes 12 are obtained by the following method. First, the first surface 10a of the glass substrate 10 for a display is observed by an atomic force microscope, and the shape image of the hole 12 is acquired. In this embodiment, the shape image of the hole 12 is obtained under the following measurement conditions using the following atomic force microscope. Atomic force microscope: Dimension ICON manufactured by Bruker Company Measurement mode: Tapping mode Probe: RTESPA (spring constant: 40 N/m) Sample/line: 512 Scanning frequency: 0.5 Hz Measurement field of view: 5 μm×5 μm measurement Part: 1 part of the center of the first surface 10a. Then, use the nano-scale 3D image processing software (SPIP6.4.1 manufactured by Image Metorology) to implement the leveling and filtering of the shape image obtained by the atomic force microscope Processing and analysis processing, the average opening area of the hole 12 and the total opening area are calculated. The details are described below. In the glass substrate 10 for a display of this embodiment, it is preferable that the arithmetic mean roughness Sa of the first surface 10a is 0.30 nm to 0.90 nm. If the arithmetic average roughness Sa is 0.3 nm or more, the charge amount can be effectively reduced. The larger the arithmetic average roughness Sa, the smaller the charged amount. However, if the arithmetic average roughness Sa is too large, the visible light transmittance is reduced, so the arithmetic average roughness Sa is preferably 0.9 nm or less. The arithmetic average roughness Sa is defined by DIN 4768, and the arithmetic average roughness Ra (specified in JIS B0601 (2001)) is expanded into a surface parameter. For the average surface of the first surface 10a, it represents the average of the absolute value of the difference in height of each point. The shape of the glass substrate 10 for a display is not specifically limited, It is preferable that the 1st surface 10a and the 2nd surface 10b are rectangular shape. Although the size of the display glass substrate 10 is not particularly limited, when the first surface 10a and the second surface 10b are rectangular, the length of one side is preferably 1 m or more, more preferably 1.5 m or more, and more preferably Above 2 m. The longer the length of one side, the larger the area of the first surface 10a, and the greater the amount of charge. However, by setting the first surface 10a to the above-mentioned average opening area and the above-mentioned total opening area, even if the length of one side is a large size of 1 m or more, the amount of charge can be reduced. Although the glass composition of the glass substrate 10 for a display is not particularly limited, when a thin film transistor is formed on the second surface 10b, it is preferably a mass% based on an oxide from the viewpoint of adhesion or a reduction in defect rate It means that the content of SiO 2 is 50 to 70% by mass, the content of Al 2 O 3 is 10 to 20% by mass, the content of B 2 O 3 is 0 to 15% by mass, the content of MgO is 0 to 10% by mass, and the content of CaO The content of SrO is 0-20% by mass, the content of SrO is 0-20% by mass, the content of BaO is 0-20% by mass, and the total content of MgO, CaO, SrO, and BaO is 1-30% by mass, and substantially Does not contain alkali metal oxides. The alkali-free glass is a glass that does not substantially contain alkali metal oxides (Na 2 O, K 2 O, Li 2 O). The total content of alkali metal oxides such as Na 2 O, K 2 O, and Li 2 O in the alkali-free glass may be, for example, 0.1% by mass or less. Regarding the alkali-free glass, when considering the high strain point and melting properties, it is preferably expressed by mass% based on oxides, the content of SiO 2 is 58 to 66 mass %, and the content of Al 2 O 3 is 15 to 22% by mass, the content of B 2 O 3 is 5-12% by mass, the content of MgO is 0-8% by mass, the content of CaO is 0-9% by mass, the content of SrO is 3-12.5% by mass, and the content of BaO It is 0-2% by mass, and the total content of MgO, CaO, SrO, and BaO is 9-18% by mass. Regarding the alkali-free glass, when considering the high strain point, it is preferably expressed in terms of mass% based on oxides, the content of SiO 2 is 54 to 73 mass %, and the content of Al 2 O 3 is 10.5 to 22.5 mass %. The content of B 2 O 3 is 0 to 5.5% by mass, the content of MgO is 0 to 10% by mass, the content of CaO is 0 to 9% by mass, the content of SrO is 0 to 16% by mass, and the content of BaO is 0% to 2.5%, the total content of MgO, CaO, SrO, and BaO is 8 to 26% by mass. According to the glass substrate 1 for a display of this embodiment, since the first surface 10a has a plurality of holes 12 with openings, and the average opening area of the holes 12 is 1.70×10 4 nm 2 or less, the total opening area of the holes 12 is 6.00×10 6 nm 2 /25 μm 2 or more, so when the glass substrate 10 for display is placed on a suction table or the like, the contact area between the two is small, and the amount of electric charge (charge amount) is small by rubbing against each other. As a result, it is easy to peel off the glass substrate 10 for a display from an adsorption stand etc. [Manufacturing method of glass substrate for display] The manufacturing method of the glass substrate for display of the present embodiment includes using a glass plate 11 having a first surface 11a and a second surface 11b opposite to the first surface 11a using a glass plate containing calcium carbonate. The step of washing the slurry; and the step of performing glass etching treatment on the first surface 11a of the glass plate 11. Hereinafter, the surface of the glass plate 11 which becomes the side of the 1st surface 10a of the glass substrate 10 for displays is called 11a, and the surface which becomes the side of the 2nd surface 10b of the glass substrate 10 for displays is called 11b. In the manufacturing method of the glass substrate for a display of this embodiment, it is preferable to form the glass plate 11 by a float method. Specifically, after the glass plate 11 is formed into a strip shape by the float method, the strip-shaped glass plate 11 is cut into a desired size, and the end surface is chamfered. Then, it is preferable to polish the second surface 11b of the glass plate 11 with a slurry containing cerium oxide. The average particle diameter of the cerium oxide used in the grinding step is preferably 0.3 μm-10 μm, more preferably 0.5 μm-3 μm. In addition, the content of cerium oxide in the slurry containing cerium oxide is preferably 0.5% by mass to 10% by mass, more preferably 0.5% by mass to 7% by mass. Then, after the polishing with the slurry containing cerium oxide is completed, the glass plate 11 is washed with a shower, rinsed with water and recirculated to the slurry on the second surface 11b of the glass plate 11 and the first surface 11a of the glass plate 11 Slurry. Then, the first surface 11a, preferably the first surface 11a and the second surface 11b of the glass plate 11 are washed with a slurry containing calcium carbonate. In this washing step, in order to remove the slurry containing cerium oxide that cannot be removed by shower washing, the slurry containing calcium carbonate is sprayed onto the glass plate 11 and washed with a brush. The cleaning by the slurry containing calcium carbonate is based on mechanical polishing as opposed to the polishing by the slurry containing cerium oxide, which is a chemical mechanical polishing. By physical collision with the slurry containing cerium oxide remaining on the second surface 11b and/or rewinding from the second surface 11b to the first surface 11a, or the dirt existing on the first surface 11a, the glass The first surface 11a and/or the second surface 11b of the plate 11 removes slurry or dirt containing cerium oxide and cleans it. As the form of the brush, the form of a disc brush is preferable, but a form such as a roller brush may also be used. The slurry containing calcium carbonate is a dispersion liquid in which calcium carbonate is dispersed in a solvent such as water and an organic solvent. The average particle size of the calcium carbonate used in the calcium carbonate-containing slurry is preferably 0.3 μm-10 μm, more preferably 0.5 μm-3 μm. In addition, the content of calcium carbonate in the slurry containing calcium carbonate is preferably 1% by mass to 15% by mass, more preferably 1% by mass to 10% by mass. The slurry containing calcium carbonate has a low grinding ability on the glass plate 11, so while maintaining the surface state of the second surface 11b of the glass plate 11, the second surface 11b and the first surface 11a of the glass plate 11 Removal of slurry containing cerium oxide. Then, it is preferable that after the step of washing with a slurry containing calcium carbonate is completed, the glass plate 11 is washed with a high-pressure shower, a washing with a lotion, and a high-pressure shower. The step of washing with pure water, the step of washing with high-pressure shower, the step of washing with pure water, and the drying step. Then, the first surface 11a of the glass plate 11 is subjected to glass etching treatment. In the step of performing the glass etching treatment, the average opening area of the plurality of holes 12 opening on the first surface 11a of the glass plate 11 becomes 1.70×10 4 nm 2 or less, and the total opening area becomes 6.00×10 6 nm 2 / It is formed by 25 μm 2 or more. As the etching tank, a reaction gas discharge port for introducing the reaction gas into the etching tank and a reaction gas discharge port for discharging the reaction gas from the etching tank are used. The reactive gas ejection port is a slit with a width of 2 mm and a length that can eject the reactive gas into the etching groove. The reaction gas discharge port is formed by a plurality of slits having the same length as the reaction gas discharge port and spaced apart and formed in parallel. The overall width of the reaction gas outlet is 17 mm. The reaction gas ejection port faces the first surface 11a of the glass plate 11. In the manufacturing method of the glass substrate for a display of this embodiment, the gas containing the hydrogen fluoride reaction component is ejected into the etching tank at 0.07 m/sec from the reactive gas ejection port, and is ejected from the reactive gas ejection port at 0.07 m/sec. The gas system discharged from the reaction gas discharge port and the air around the reaction gas discharge port are sucked together at 0.5 m/sec to become a mixed gas. The concentration of hydrogen fluoride contained in the mixed gas is preferably 500 ppm to 1500 ppm, more preferably 600 ppm to 1000 ppm. By setting the concentration of the mixed gas in the above-mentioned range, the average opening area and the total opening area of the plurality of holes 12 opening on the first surface 11a of the glass plate 11 easily fall into the above-mentioned range. In other words, in the step of performing the glass etching treatment, regardless of the ejection amount, discharge amount, and suction amount of the reaction gas, the concentration of hydrogen fluoride contained in the mixed gas is preferably such that the concentration of the mixed gas falls within the above-mentioned range. The step of performing glass etching treatment is preferably performed at normal temperature and normal pressure. The reactive gas is preferably generated by atmospheric pressure slurry treatment in a plasma treatment tank different from the tank for glass etching treatment (hereinafter referred to as "etching tank"). For example, it is possible to generate hydrogen fluoride as a reaction gas by subjecting carbon tetrafluoride as a raw material gas to atmospheric pressure in the presence of water vapor. As the carrier gas, an inert gas such as nitrogen can be used. It is possible to perform glass etching by blowing the generated reaction gas from a nozzle installed in the etching tank toward the first surface 11a of the glass plate 11 through a pipe. The concentration and pressure of the reaction gas in the etching tank can be adjusted by the supply amount of raw material gas to the plasma processing tank, the supply amount of water, and the discharge power of the plasma processing. In the etching tank, in order to continuously perform processing, it is preferable to provide a substrate carrying port and a substrate discharge port. Furthermore, it is preferable to provide a conveying mechanism that conveys the glass plate 11 from the substrate import port to the substrate discharge port. In this case, the nozzle for blowing the reaction gas is installed on the path of the glass plate 11 from the substrate transfer port to the substrate discharge port. After that, the glass plate 11 was washed with pure water and dried to obtain a glass substrate 10 for a display, and the obtained glass substrate 10 for a display was inspected. Furthermore, in this embodiment, before the step of glass etching treatment, the step of manufacturing the glass plate 11 by the float method, the step of polishing with a slurry containing cerium oxide, and the step of using a slurry containing calcium carbonate are performed. All aspects of the steps of washing the slurry have been described, but the steps other than the step of performing the glass etching treatment in the method of manufacturing a glass substrate for a display of the present invention are arbitrary. For example, it is also possible to purchase the glass plate 11 from a third party to the step of polishing with the slurry containing cerium oxide, and only perform the step of cleaning with the slurry containing calcium carbonate and the glass etching treatment. step. Moreover, it is also possible to purchase the glass plate 11 from a third party to the step of washing with calcium carbonate, and to perform only the step of performing the glass etching treatment. In addition, the glass plate 11 subjected to the etching treatment may also be a glass plate that does not go through the step of polishing with a slurry containing cerium oxide. According to the method of manufacturing a glass substrate for a display of this embodiment, there is a step of performing glass etching treatment on the first surface 11a of the glass plate 11. In the step of performing the glass etching treatment, a plurality of holes are opened on the first surface 11a 12 is formed so that the average opening area becomes 1.70×10 4 nm 2 or less and the total opening area becomes 6.00×10 6 nm 2 /25 μm 2 or more. The contact area is small, and the amount of electric charge (charge amount) by rubbing on the suction table is small. As a result, a glass substrate 10 for a display that is easily peeled off from the suction table and the like is obtained. [Examples] Hereinafter, the present invention will be explained more specifically with examples and comparative examples, but the present invention is not limited to the following examples. [Example 1] A glass plate (trade name: AN100, Asahi Glass Co., Ltd.) obtained by the float method on one side and finished by polishing with cerium oxide on the second side was 520 mm in length × 410 mm in width × 0.50 mm in thickness Manufacturing), while spraying the slurry for cleaning the slurry prepared by dispersing calcium carbonate in water onto the first and second sides of the glass plate, and cleaning with a disc brush. The concentration of calcium carbonate is set to 3.0% by mass in the slurry (100% by mass). As calcium carbonate, one having an average particle diameter of 1 μm is used. Set the conveying speed of the glass plate to 10 m/min. Then, the first surface of the glass plate that has been cleaned by the calcium carbonate slurry is cleaned with a lotion and pure water, and the glass plate is dried with an air knife. Then, the first surface of the glass plate that has been cleaned with pure water is subjected to glass etching treatment with hydrogen fluoride. As the etching tank, a reaction gas discharge port for introducing the reaction gas into the etching tank and a reaction gas discharge port for discharging the reaction gas from the etching tank are used. The reactive gas ejection port is a slit with a width of 2 mm and a length that can eject the reactive gas into the etching groove. The reaction gas discharge port is formed by a plurality of slits having the same length as the reaction gas discharge port and spaced apart and formed in parallel. The overall width of the reaction gas outlet is 17 mm. In this embodiment, the gas containing the hydrogen fluoride reaction component is ejected into the etching tank at 0.07 m/sec from the reactive gas ejection port, and is ejected from the reactive gas ejection port at 0.07 m/sec. The gas system discharged from the reaction gas discharge port and the air around the reaction gas discharge port are sucked together at 0.5 m/sec to become a mixed gas. Adjust the hydrogen fluoride concentration in the mixed gas to 500 ppm. The pressure and temperature of the hydrogen fluoride in the etching bath are set to normal temperature and normal pressure. Hydrogen fluoride is produced by plasma treatment in the presence of water vapor using carbon tetrafluoride as the raw material gas. As the carrier gas, nitrogen is used. Then, the glass plate after the glass etching treatment was washed with pure water and dried to obtain the glass substrate of Example 1. On the first surface of the obtained glass substrate, a plurality of holes are formed as shown in FIG. 2. Furthermore, in Fig. 2, the darker part represents a hole. In addition, the scars that appear to be linear are scars formed by the cerium oxide that wraps around during the grinding of the cerium oxide. This scar is included in the average opening area and total opening area described below. [Example 2] In the glass etching treatment, the concentration of hydrogen fluoride contained in the mixed gas was adjusted to 850 ppm, except for this, the glass substrate of Example 2 was obtained in the same manner as Example 1. On the first surface of the obtained glass substrate, a plurality of holes are formed as shown in FIG. 3. [Example 3] In the glass etching process, adjustment was performed so that the hydrogen fluoride concentration contained in the mixed gas became 700 ppm, except that the glass substrate of Example 3 was obtained in the same manner as Example 1. On the first surface of the obtained glass substrate, a plurality of holes are formed as shown in FIG. 4. [Comparative Example 1] While conveying the same glass plate (trade name: AN100, manufactured by Asahi Glass Co., Ltd.) as the user in Example 1, while spraying the slurry for cleaning the slurry prepared by dispersing cerium oxide in water Go to the first surface of the glass plate, and clean the first surface of the glass substrate with a disc brush. The concentration of cerium oxide is set to 7.0% by mass in the slurry (100% by mass). As the cerium oxide, one having an average particle diameter of 1 μm is used. Set the conveying speed of the glass plate to 10 m/min. Then, the first surface of the glass plate that has been cleaned by the cerium oxide slurry was cleaned with a detergent and pure water, and the glass plate was dried with an air knife to obtain a glass substrate of Comparative Example 1. On the first surface of the obtained glass substrate, as shown in FIG. 5, a plurality of holes generated by washing with the slurry of cerium oxide were formed. [Comparative Example 2] While conveying the same glass plate (trade name: AN100, manufactured by Asahi Glass Co., Ltd.) as the user in Example 1, while spraying the slurry for cleaning the slurry prepared by dispersing cerium oxide in water Go to the first surface of the glass substrate, and clean the first surface of the glass plate with a disc brush. The concentration of cerium oxide is set to 7.0% by mass in the slurry (100% by mass). As the cerium oxide, one having an average particle diameter of 1 μm is used. Set the conveying speed of the glass plate to 10 m/min. Then, the first surface of the glass plate that has been cleaned with the slurry of cerium oxide is cleaned with a lotion and pure water, and the glass plate is dried with an air knife. Then, the first surface of the glass plate after the cleaning treatment with pure water was completed was subjected to glass etching treatment with hydrogen fluoride. In the glass etching process, adjustment was performed so that the hydrogen fluoride concentration contained in the mixed gas became 700 ppm, and except for that, the glass substrate of Comparative Example 2 was obtained in the same manner as in Example 1. On the first surface of the obtained glass plate, a plurality of holes are formed as shown in FIG. 6. [Comparative Example 3] While conveying the same glass plate (trade name: AN100, manufactured by Asahi Glass Co., Ltd.) as the user in Example 1, the slurry for cleaning the slurry prepared by dispersing calcium carbonate in water was sprayed to The first side of the glass plate is cleaned with a disc brush. The concentration of calcium carbonate is set to 3.0% by mass in the slurry (100% by mass). As calcium carbonate, one having an average particle diameter of 1 μm is used. Set the conveying speed of the glass substrate to 10 m/min. Then, the first surface of the glass plate that was cleaned by the calcium carbonate slurry was washed with a lotion and pure water, and the glass plate was dried with an air knife to obtain a glass substrate of Comparative Example 3. As shown in FIG. 7, the first surface of the obtained glass substrate is slightly lacking in flatness compared with the examples or other comparative examples, and a plurality of holes are formed by the cleaning of the calcium carbonate slurry. [Measurement of the average opening area and total opening area of the holes in the glass substrate] For the glass substrates obtained in Examples 1 to 3 and Comparative Examples 1 to 3, the first surface of the glass substrate was observed with an atomic force microscope (AFM), After obtaining the shape image of the hole, use image analysis software (SPIP6.4.1 manufactured by Image Metorology) to calculate the average opening area and total opening area of the hole. The atomic force microscope and measurement conditions are as follows. Atomic force microscope: Dimension ICON manufactured by Bruker. Measurement mode: Tapping mode Probe: RTESPA (spring constant: 40 N/m) Sample/line: 512 Scanning frequency: 0.5 Hz Measurement field of view: 5 μm×5 μm Measurement position: No. 1 In addition, the calculation procedure of the average opening area and total opening area of the holes using image analysis software is as follows for one part of the center of the surface (10a). Sequence 1: Leveling processing (implement "leveling for each line" and "leveling for the entire surface"; after that, rotate the image by 90°, and perform "leveling for each line" and "leveling for the entire surface" again Leveling") Sequence 2: Filtering 1 (According to the window of the central value (median value), select or input: non-directional noise, high-low value, replacement ratio: 2. Window size: 5, so that "including boundary" Valid and apply) Sequence 3: Filtering 2 (According to the convolution window, select or input: smoothing, Gaussian distribution, standard deviation: 1, make "X=Y" and "auto size" valid, and apply) Sequence 4: Particle and hole analysis (First, according to the detected window, select or input: branch line-scattering shape, hole detection, and classification smooth range: ±0.50, filter size smoothing: 2.00 pixels; then, according to In the post-processing window, make "holes to save shape", "suppression of pixel noise", and "shapes including the image end"; finally, click on Detect to find the average area and total area of the holes) The results are shown in Table 1 . [Measurement of arithmetic mean roughness Sa of glass substrate] For the glass substrates obtained in Examples 1 to 3 and Comparative Examples 1 to 3, the arithmetic mean roughness Sa (nm) of the first surface was measured. The arithmetic mean roughness Sa is obtained by measuring the 5 μm×5 μm measurement area of each point as specified in DIN 4768 and measured by an atomic force microscope (AFM). The results are shown in Table 1. [The amount of charge of the glass substrate] The amount of peeling charge of the glass substrates obtained in Examples 1 to 3 and Comparative Examples 1 to 3 was measured. The measurement method is to first hold the edge of the glass substrate so that the first surface faces a vacuum suction table made of stainless steel (SUS304). Then, 1 of the suction and release of the glass substrate on the vacuum suction table was repeated 110 times. Finally, the peeling charge amount (V) was measured by measuring the charge amount when the glass substrate was lifted from the stage with a surface potentiometer (MODEL 320C, manufactured by TREK JAPAN). The distance between the first surface of the glass substrate and the probe of the surface potentiometer is 30 mm. The results are shown in Table 1. In addition, the relationship between the total opening area (nm 2 /25 μm 2 ) of the holes of the glass substrate and the peeling charge amount (V) of the glass substrate is shown in FIG. 8. [Table 1]
Figure 105133269-A0304-0001
 It can be seen from the results of Table 1 and FIG. 8 that by satisfying the conditions of both the average opening area and the total opening area of the holes of the glass substrate, the peeling charge can be reduced. The reason for this is considered to be that compared with the cleaning by cerium oxide, the cleaning by calcium carbonate performs cleaning while maintaining the surface state of the glass substrate. That is, in the case of cleaning by cerium oxide, because the polishing ability is high, the easily etched part of the first surface of the glass substrate is shaved off. On the other hand, it is cleaned by calcium carbonate. In this case, the easily etched part of the surface layer of the first surface of the glass substrate remains, and only the dirt is removed. Therefore, it is possible to examine those that are easy to open the hole by etching. In addition, it is also considered that the chemical by-products (gelatinous dioxide) in the polishing process using the slurry containing cerium oxide are easy to rewind from the second surface to the first surface when the calcium carbonate is used for cleaning. Silicon, etc.) to remove. The present invention has been described in detail above and with reference to specific embodiments, but it is clear to the industry that various changes or modifications can be added without departing from the spirit and scope of the present invention. This application is based on a Japanese patent application (Japanese Patent Application No. 2015-203881) filed on October 15, 2015, and the content is incorporated herein by reference. [Industrial Applicability] The glass substrate for display of the present invention is used as a substrate for displays such as plasma display panel (PDP), liquid crystal display (LCD), electroluminescence display (ELD), field emission display (FED), etc. And useful.

10‧‧‧顯示器用玻璃基板 10a‧‧‧顯示器用玻璃基板之第1面 10b‧‧‧顯示器用玻璃基板之第2面 11‧‧‧玻璃板 11a‧‧‧玻璃板之第1面 11b‧‧‧玻璃板之第2面 12‧‧‧孔10‧‧‧Glass substrate for display 10a‧‧‧The first side of glass substrate for display 10b‧‧‧The second side of glass substrate for display 11‧‧‧Glass plate 11a‧‧‧The first side of the glass plate 11b‧‧‧The second side of the glass plate 12‧‧‧Hole

圖1係表示本發明之顯示器用玻璃基板之一實施形態之概略剖視圖。 圖2係針對實施例1之玻璃基板檢測孔所得之圖像。 圖3係針對實施例2之玻璃基板檢測孔所得之圖像。 圖4係針對實施例3之玻璃基板檢測孔所得之圖像。 圖5係針對比較例1之玻璃基板檢測孔所得之圖像。 圖6係針對比較例2之玻璃基板檢測孔所得之圖像。 圖7係針對比較例3之玻璃基板檢測孔所得之圖像。 圖8係表示玻璃基板之孔之合計開口面積與玻璃基板之剝離帶電量之關係之圖表。Fig. 1 is a schematic cross-sectional view showing an embodiment of the glass substrate for a display of the present invention. Figure 2 is an image obtained from the inspection hole of the glass substrate of Example 1. FIG. 3 is an image obtained from the inspection hole of the glass substrate of Example 2. FIG. FIG. 4 is an image obtained from the inspection hole of the glass substrate of Example 3. FIG. Figure 5 is an image of the inspection hole of the glass substrate of Comparative Example 1. Fig. 6 is an image obtained for the inspection hole of the glass substrate of Comparative Example 2. FIG. 7 is an image obtained for the inspection hole of the glass substrate of Comparative Example 3. FIG. Fig. 8 is a graph showing the relationship between the total opening area of the holes of the glass substrate and the peeling charge amount of the glass substrate.

10‧‧‧顯示器用玻璃基板 10‧‧‧Glass substrate for display

10a‧‧‧顯示器用玻璃基板之第1面 10a‧‧‧The first side of glass substrate for display

10b‧‧‧顯示器用玻璃基板之第2面 10b‧‧‧The second side of glass substrate for display

11‧‧‧玻璃板 11‧‧‧Glass plate

11a‧‧‧玻璃板之第1面 11a‧‧‧The first side of the glass plate

11b‧‧‧玻璃板之第2面 11b‧‧‧The second side of the glass plate

12‧‧‧孔 12‧‧‧Hole

Claims (11)

一種顯示器用玻璃基板，其係具有第1面及與該第1面相反側之第2面者，其特徵在於：上述第1面具有開口之複數個孔，上述孔之平均開口面積為1.70×104nm2以下，上述孔之合計開口面積為6.00×106nm2/25μm2以上，實質上不含有鹼金屬氧化物。 A glass substrate for a display, which has a first surface and a second surface opposite to the first surface, characterized in that the first surface has a plurality of holes with openings, and the average opening area of the holes is 1.70× 10 4 nm 2 or less, the total opening area of the above-mentioned holes is 6.00×10 6 nm 2 /25 μm 2 or more, and it contains substantially no alkali metal oxide. 如請求項1之顯示器用玻璃基板，其中玻璃組成以氧化物基準之質量%表示，SiO2之含量為50~70質量%，Al2O3之含量為10~20質量%，B2O3之含量為0~15質量%，MgO之含量為0~10質量%，CaO之含量為0~20質量%，SrO之含量為0~20質量%，BaO之含量為0~20質量%，MgO、CaO、SrO、BaO之合計之含量為1~30質量%。 For example, the glass substrate for display in claim 1, wherein the glass composition is expressed by mass% based on oxide, the content of SiO 2 is 50 to 70 mass %, the content of Al 2 O 3 is 10 to 20 mass %, and B 2 O 3 The content is 0-15 mass%, the content of MgO is 0-10 mass%, the content of CaO is 0-20 mass%, the content of SrO is 0-20 mass%, the content of BaO is 0-20 mass%, MgO The total content of CaO, SrO, and BaO is 1-30% by mass. 如請求項1之顯示器用玻璃基板，其中上述第2面係形成電子構件之面，上述第1面係不形成電子構件之面。 The glass substrate for a display of claim 1, wherein the second surface is a surface that forms an electronic component, and the first surface is a surface that does not form an electronic component. 如請求項2之顯示器用玻璃基板，其中上述第2面係形成電子構件之面，上述第1面係不形成電子構件之面。 The glass substrate for a display according to claim 2, wherein the second surface is a surface that forms an electronic component, and the first surface is a surface that does not form an electronic component. 如請求項1至4中任一項之顯示器用玻璃基板，其中上述第1面之算術平均粗糙度Sa為0.30nm以上。 The glass substrate for a display according to any one of claims 1 to 4, wherein the arithmetic average roughness Sa of the first surface is 0.30 nm or more. 如請求項1至4中任一項之顯示器用玻璃基板，其中上述第1面及上述第2面為矩形狀，且1邊之長度為1m以上。 The glass substrate for a display according to any one of claims 1 to 4, wherein the first surface and the second surface are rectangular, and the length of one side is 1 m or more. 如請求項5之顯示器用玻璃基板，其中上述第1面及上述第2面為矩形狀，且1邊之長度為1m以上。 The glass substrate for a display according to claim 5, wherein the first surface and the second surface are rectangular, and the length of one side is 1 m or more. 一種顯示器用玻璃基板之製造方法，該顯示器用玻璃基板實質上不含有鹼金屬氧化物，該製造方法特徵在於：具有對具有第1面及與該第1面相反側之第2面之玻璃板之上述第1面進行玻璃蝕刻處理之步驟，且於進行上述玻璃蝕刻處理之步驟中，將於上述第1面開口之複數個孔以平均開口面積成為1.70×104nm2以下且合計開口面積成為6.00×106nm2/25μm2以上之方式形成。 A method for manufacturing a glass substrate for a display, the glass substrate for a display does not substantially contain an alkali metal oxide, and the manufacturing method is characterized by having a glass plate having a first surface and a second surface opposite to the first surface The step of performing glass etching treatment on the above-mentioned first surface, and in the step of performing the above-mentioned glass etching treatment, the average opening area of the plurality of holes opened on the above-mentioned first surface becomes 1.70×10 4 nm 2 or less and the total opening area It is formed to be 6.00×10 6 nm 2 /25 μm 2 or more. 如請求項8之顯示器用玻璃基板之製造方法，其中於進行上述玻璃蝕刻處理之步驟之前，具有將上述玻璃板利用包含碳酸鈣之漿料進行洗淨之步驟。 The manufacturing method of the glass substrate for a display of Claim 8 which has the process of washing the said glass plate with the slurry containing calcium carbonate before performing the said glass etching process. 如請求項8或9之顯示器用玻璃基板之製造方法，其中上述玻璃蝕刻處理係利用包含氟化氫之氣體之蝕刻。 The method for manufacturing a glass substrate for a display according to claim 8 or 9, wherein the glass etching treatment is etching using a gas containing hydrogen fluoride. 如請求項10之顯示器用玻璃基板之製造方法，其中於上述利用包含氟化氫之氣體之蝕刻中，將包含氟化氫反應成分之氣體自反應氣體噴出口以0.07m/sec噴出至蝕刻槽內，並自反應氣體排出口以0.07m/sec排出，自反應氣體排出口所排出之氣體與反應氣體排出口周邊之空氣一同以0.5m/sec被吸引時之混合氣體中所含之氟化氫濃度為500ppm~1500ppm。 The method for manufacturing a glass substrate for a display according to claim 10, wherein in the etching using the gas containing hydrogen fluoride, the gas containing the hydrogen fluoride reaction component is ejected from the reaction gas ejection port into the etching groove at 0.07 m/sec, and The reaction gas outlet is discharged at 0.07m/sec. The gas discharged from the reaction gas outlet and the air around the reaction gas outlet are sucked together at 0.5m/sec. The concentration of hydrogen fluoride contained in the mixed gas is 500ppm~1500ppm .
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