隨著半導體技術的演進，半導體設備開始大量引進陶瓷材料，或陶瓷與其他非陶瓷材料例如金屬、高分子材料等之複合材料做為所需之零件，其中包括現行晶圓載具舉所採用之靜電吸盤。靜電吸盤應用於真空系統中使用非常廣泛，常用之半導體製程如化學氣相沉積(CVD)、物理氣相沉積(PVD)、反應離子蝕刻(RIE, Reactive Ion Etching)、面板及自動化設備運用等等均採用靜電吸盤之晶圓載具。然而在半導體設備中，特別是真空設備均因內部之物理或化學反應(如PVD、CVD、RIE反應)，會對金屬表面產生嚴重之侵蝕作用，因此披覆於金屬層之陶瓷材料便成為下層金屬層很好的防護層，如圖1所示，即為一類似靜電吸盤之陶瓷與金屬複合材料之零件結構之示意圖。圖1中，陶瓷與金屬之複合材料零件1包括金屬的基座10、與金屬基座結合的陶瓷層11以及在陶瓷層11內的電極層12，為一典型且廣泛使用之陶瓷與金屬複合材料所製成之關鍵零件。但陶瓷層11本身也會因持續被高速離子轟擊或化學氣相反應氣體侵蝕而容易使表面平整度變差甚至產生局部破損現象，而使零件之效能降低，嚴重者必須汰換該零件增加生產成本。
現階段對於表面已受破壞之陶瓷材料，一般採用研磨整平方式進行修復，但是這也造成陶瓷層11厚度會隨著修理次數而變薄，引發零件可靠度之問題。因此，傳統之修復方式使修復次數受到限制，且若陶瓷層11有破損情形就無法進行修復而報廢，增加使用者之成本。
因此，如何增加陶瓷材料或陶瓷複合材料之使用壽命成為業界研究開發的重點之一。With the evolution of semiconductor technology, semiconductor equipment has begun to introduce a large number of ceramic materials, or composite materials of ceramics and other non-ceramic materials such as metals, polymer materials, etc., as required parts, including the static electricity used in current wafer carriers. sucker. Electrostatic chucks are widely used in vacuum systems, commonly used semiconductor processes such as chemical vapor deposition (CVD), physical vapor deposition (PVD), reactive ion etching (RIE, Reactive Ion Etching), panel and automated equipment applications, etc. All wafer carriers with electrostatic chuck are used. However, in semiconductor equipment, especially vacuum equipment, due to internal physical or chemical reactions (such as PVD, CVD, RIE reactions), the metal surface will be seriously eroded, so the ceramic material coated on the metal layer will become the lower layer. The metal layer is a good protective layer, as shown in Figure 1, which is a schematic diagram of the structure of a ceramic and metal composite material similar to an electrostatic chuck. In FIG. 1, a ceramic-metal composite material part 1 includes a metal base 10, a ceramic layer 11 combined with the metal base, and an electrode layer 12 in the ceramic layer 11, which is a typical and widely used ceramic-metal composite Key parts made of materials. However, the ceramic layer 11 itself will be easily bombarded by high-speed ions or eroded by chemical vapor reaction gas, which will easily deteriorate the surface flatness or even cause local damage, which will reduce the performance of the parts. In severe cases, the parts must be replaced to increase production. cost.
At present, for the ceramic material whose surface has been damaged, the grinding and leveling method is generally used for repairing, but this also causes the thickness of the ceramic layer 11 to become thinner with the repairing times, which leads to the problem of reliability of the parts. Therefore, the traditional repair method limits the repair times, and if the ceramic layer 11 is damaged, it cannot be repaired and will be scrapped, increasing the cost of the user.
Therefore, how to increase the service life of ceramic materials or ceramic composite materials has become one of the focuses of research and development in the industry.
為了能夠更清楚地描述本發明所提出之修復方式，以下將配合圖式，詳盡說明本發明之較佳實施例。
圖1顯示為本實施例一陶瓷與金屬之複合材料零件之側視圖，陶瓷與金屬之複合材料零件1包括基座10、與基座10結合的陶瓷層11以及在陶瓷層11內的電極層12。
圖2A顯示為陶瓷與金屬複合材料零件於使用一段時間後陶瓷層11產生一破損處13。破損處13可能為受物理或化學侵蝕，如離子撞擊、化學氣相反應等、刮傷、斷裂、缺角等等。請參閱圖2B，圖2B顯示為本發明的陶瓷零件之修復方法的流程圖。首先，請參閱步驟S11，提供至少一氣體，該氣體是選自於氬氣、氫氣、氮氣及氦氣所組成的群組。
之後，請參閱步驟S12，提供至少一陶瓷粉體，用於修復陶瓷層11之陶瓷粉體可以是氮化鋁(AlN)、氧化鋁(Al2
O3
)、氮化鈦(TiN)、氧化釔(Y2
O3
)至少一種之組合其顆粒大小＜70um，其所形成之陶瓷沉積層15厚度界於0.01mm-0.3mm之間，可為單層結構或複數層結構。
圖3顯示為表面破損陶瓷層之局部放大圖，為了處理破損處13，即修復陶瓷層11上的缺陷，在修復前可先針對陶瓷層11與破損處13進行表面處理，該表面處理方式包括清潔，如酸洗、有機溶劑清洗等；粗化，如噴砂、砂磨等；預熱與黏結層處理等程序，其中清潔之目的，主要是為了去除不潔物，如雜質、灰塵、進行物理或化學反應時殘留之附著物等，以及表面較為脆弱之陶瓷結構。粗化程序能夠增加噴塗材料的附著面積以增進其附著力。預熱處理主要是將水氣烘乾，以提高塗層與陶瓷層11的鍵結，為避免金屬層與陶瓷層11間膨脹係數不一造成的應力效應，破壞金屬與陶瓷層11間之接合狀態，或導致零件之扭曲形變，較佳的預熱溫度為小於300°C，黏結層一般應用於陶瓷塗層與表面處理後之陶瓷層表面14或金屬基材間做為一層緩衝層，黏結層可為熔點較陶瓷粉體為低之陶瓷材料，如二氧化矽、矽酸鹽類等及其組合，主要目的為提高塗層與基材鍵結力，以及良好的封孔效果與抗氧化性。
之後，請參閱圖2B的步驟S13，在破損處13提供至少一能量源引發該氣體的反應。在上所述的能量源可以為電漿熔射或雷射熔覆，以電漿熔射為例：通常是以適當之氬氣(Ar)、氫氣(H2
)、氮氣(N2
)或氦氣(He)或其組合為陶瓷粉體之載體。
請再次參閱圖2B及同時參閱圖4，圖4顯示為修復後之陶瓷與金屬複合材料零件的側視圖。在步驟S14中，是在破損處13燒結沉積至少一層的該陶瓷粉體以達成修補作用。具體來說，當陶瓷粉末與氣體同時噴出時，在高電壓下，氣體解離成離子狀態，產生極高的溫度，並將陶瓷粉體熔射於經表面處理後之陶瓷層表面14將破損處13填平。更詳細來說，在高溫下，陶瓷粉體與受損之陶瓷表面產生燒結作用，而形成一陶瓷沉積層15於經表面處理後之陶瓷層表面14，達到填補之目的。
另外，上述雷射熔覆則是將高溫之雷射光源照射在經表面處理後之陶瓷層表面14，並將陶磁粉體噴往破損處13，在高溫下，陶瓷粉體與受損之陶瓷表面產身燒結作用，而形成陶瓷沉積層15於經表面處理後之陶瓷層表面14，達到填補破損處13之目的。
請再次參閱圖4，修復後之陶瓷金屬複合材料零件，其中破損處13已被陶瓷沉積層15填滿，為使修復後之陶瓷金屬複合材料零件表面更為平整，可將陶瓷沉積層15表面進一步整平，整平方式可包含，砂磨、拋光等步驟。
請參考圖5，圖5顯示為本發明另一實施例的陶瓷零件之修復方法的流程圖，陶瓷零件之修復方法包括下列步驟：
首先，請參閱步驟S21及同時參閱圖6A及圖6B， 去除陶瓷層表面14到至少該破損處13之底部，以形成一整平表面24。詳細來說，陶瓷層11的破損處13只佔一個局部之區域，為了讓修復後之陶瓷層11其特性趨於一致，可將陶瓷層表面14一起去除至破損處13之底部，再加以整平，以形成一整平表面24。
之後，請參閱步驟S22，將整平表面24進行表面處理，該表面處理方式包括清潔，如酸洗、有機溶劑清洗等；粗化，如噴砂、砂磨等；預熱與黏結層處理等程序。
之後，請參閱步驟S23，在該整平表面處提供至少一氣體，該氣體是選自於氬氣、氫氣、氮氣及氦氣所組成的群組。
之後，請參閱步驟S24，提供至少一陶瓷粉體，陶瓷粉體可以是氮化鋁(AlN)、氧化鋁(Al2
O3
)、氮化鈦(TiN)、氧化釔(Y2
O3
)至少一種之組合其顆粒大小＜70um。
之後，請參閱步驟S25及同時參閱圖6C，提供至少一能量源引發該氣體的反應。其中，能量源可以為電漿熔射或雷射熔覆，該電漿熔射或該雷射熔覆之方法形成一陶瓷沉積層15於經表面處理後之陶瓷層表面14，均勻沉積陶瓷層至原先之厚度，達到填補之目的，最後進行表面之整平完成修復。
綜上，依據本發明之方法，陶瓷材料表面破損之處可被填平還原，有別於傳統整平方式每次皆要消耗陶磁層厚度，且可做局部之修整，故採用本發明之方式，可大幅提高陶瓷零件或陶瓷複合零件之使用壽命。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。In order to describe the repairing method proposed by the present invention more clearly, the preferred embodiments of the present invention will be described in detail below with reference to the drawings. 1 shows a side view of a ceramic-metal composite part of the present embodiment. The ceramic-metal composite part 1 includes a base 10 , a ceramic layer 11 combined with the base 10 , and an electrode layer in the ceramic layer 11 12. FIG. 2A shows a damaged part 13 of the ceramic layer 11 after the ceramic and metal composite parts are used for a period of time. The damaged portion 13 may be physically or chemically attacked, such as ion impact, chemical vapor reaction, etc., scratches, fractures, missing corners, and the like. Please refer to FIG. 2B . FIG. 2B is a flow chart of the repairing method of the ceramic part of the present invention. First, referring to step S11, at least one gas is provided, and the gas is selected from the group consisting of argon, hydrogen, nitrogen and helium. After that, please refer to step S12 to provide at least one ceramic powder, and the ceramic powder used for repairing the ceramic layer 11 may be aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), titanium nitride (TiN), oxide The particle size of at least one combination of yttrium (Y 2 O 3 ) is less than 70um, and the thickness of the formed ceramic deposition layer 15 is between 0.01mm-0.3mm, which can be a single-layer structure or a multiple-layer structure. FIG. 3 shows a partial enlarged view of the damaged ceramic layer on the surface. In order to treat the damaged part 13, that is, to repair the defects on the ceramic layer 11, the ceramic layer 11 and the damaged part 13 can be surface treated before the repair. The surface treatment methods include: Cleaning, such as pickling, organic solvent cleaning, etc.; roughening, such as sandblasting, sanding, etc.; preheating and bonding layer treatment procedures, among which the purpose of cleaning is mainly to remove impurities, such as impurities, dust, physical or Residual deposits during chemical reactions, etc., and ceramic structures with relatively fragile surfaces. The roughening procedure can increase the adhesion area of the sprayed material to improve its adhesion. The preheating treatment is mainly to dry the water vapor to improve the bonding between the coating and the ceramic layer 11. In order to avoid the stress effect caused by the different expansion coefficients between the metal layer and the ceramic layer 11, the joint between the metal and the ceramic layer 11 is destroyed. The best preheating temperature is less than 300°C. The bonding layer is generally used as a buffer layer between the ceramic coating and the surface 14 of the ceramic layer after surface treatment or the metal substrate. The layer can be a ceramic material with a lower melting point than the ceramic powder, such as silicon dioxide, silicate, etc. and their combinations. The main purpose is to improve the bonding force between the coating and the substrate, as well as good sealing effect and anti-oxidation. sex. Afterwards, please refer to step S13 of FIG. 2B , at least one energy source is provided at the damaged part 13 to induce the reaction of the gas. The energy source mentioned above can be plasma spraying or laser cladding, taking plasma spraying as an example: usually suitable argon (Ar), hydrogen (H 2 ), nitrogen (N 2 ) or Helium (He) or its combination is the carrier of the ceramic powder. Please refer again to FIG. 2B and also to FIG. 4, which shows a side view of the repaired ceramic-metal composite part. In step S14, at least one layer of the ceramic powder is sintered and deposited at the damaged part 13 to achieve a repairing effect. Specifically, when the ceramic powder and the gas are sprayed at the same time, under a high voltage, the gas dissociates into an ion state, resulting in a very high temperature, and the ceramic powder is sprayed on the surface 14 of the surface-treated ceramic layer where the surface will be damaged. 13 Fill in. More specifically, at high temperature, the ceramic powder and the damaged ceramic surface are sintered to form a ceramic deposition layer 15 on the surface 14 of the surface-treated ceramic layer to achieve the purpose of filling. In addition, in the above laser cladding, a high-temperature laser light source is irradiated on the surface 14 of the ceramic layer after surface treatment, and the ceramic powder is sprayed to the damaged part 13. At high temperature, the ceramic powder and the damaged ceramic The surface is sintered, and a ceramic deposition layer 15 is formed on the surface 14 of the ceramic layer after the surface treatment, so as to achieve the purpose of filling the damaged part 13 . Please refer to FIG. 4 again, the repaired ceramic metal composite part, wherein the damaged part 13 has been filled with the ceramic deposition layer 15. In order to make the surface of the repaired ceramic metal composite part more flat, the surface of the ceramic deposition layer 15 can be For further leveling, the leveling method may include steps such as sanding and polishing. Please refer to FIG. 5. FIG. 5 is a flowchart of a method for repairing a ceramic part according to another embodiment of the present invention. The method for repairing a ceramic part includes the following steps: First, please refer to step S21 and FIG. 6A and FIG. The ceramic layer surface 14 reaches at least the bottom of the damaged portion 13 to form a flat surface 24 . In detail, the damaged part 13 of the ceramic layer 11 only occupies a local area. In order to make the characteristics of the repaired ceramic layer 11 tend to be consistent, the surface 14 of the ceramic layer can be removed to the bottom of the damaged part 13, flat to form a flat surface 24 . After that, please refer to step S22, and the leveling surface 24 is subjected to surface treatment, and the surface treatment methods include cleaning, such as pickling, organic solvent cleaning, etc.; roughening, such as sandblasting, sanding, etc.; preheating and bonding layer treatment and other procedures . Afterwards, referring to step S23, at least one gas is provided at the leveling surface, and the gas is selected from the group consisting of argon, hydrogen, nitrogen and helium. Then, please refer to step S24 to provide at least one ceramic powder. The ceramic powder may be aluminum nitride (AlN), aluminum oxide (Al 2 O 3 ), titanium nitride (TiN), and yttrium oxide (Y 2 O 3 ). The particle size of at least one combination is <70um. After that, please refer to step S25 and FIG. 6C at the same time, providing at least one energy source to induce the reaction of the gas. The energy source can be plasma spraying or laser cladding. The plasma spraying or laser cladding method forms a ceramic deposition layer 15 on the surface 14 of the ceramic layer after surface treatment, and uniformly deposits the ceramic layer To the original thickness, the purpose of filling is achieved, and finally the surface is leveled to complete the repair. To sum up, according to the method of the present invention, the damaged part of the surface of the ceramic material can be filled and restored, which is different from the traditional flattening method, which consumes the thickness of the ceramic layer every time, and can be partially trimmed. Therefore, the method of the present invention is adopted. , which can greatly improve the service life of ceramic parts or ceramic composite parts. Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the appended patent application.
