TWI730527B - A draft tube with heater - Google Patents

A draft tube with heater Download PDF

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Publication number
TWI730527B
TWI730527B TW108144465A TW108144465A TWI730527B TW I730527 B TWI730527 B TW I730527B TW 108144465 A TW108144465 A TW 108144465A TW 108144465 A TW108144465 A TW 108144465A TW I730527 B TWI730527 B TW I730527B
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Taiwan
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cylinder
electrode connector
lower cylinder
heating
upper cylinder
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TW108144465A
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Chinese (zh)
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TW202022173A (en
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趙旭良
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大陸商上海新昇半導體科技有限公司
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Abstract

The present invention provides draft tube with heater, the draft tube comprises top housing with a top channel connecting top portion and bottom portion of the top housing; bottom housing with a bottom channel connecting top portion and bottom portion of the bottom housing, the bottom housing also with a heater, and the top portion of the bottom housing connected with the bottom portion of the top housing, wherein the top channel and the bottom channel together form a draft channel. The draft tube of the present invention can adjust the heat flow according to different type of crystal growth without changing the shape of the draft tube, therefore, it can reduce the production cost. Besides, it also can enhance the adjustability of the heat field during the process to make the single crystal growth more controllable.

Description

加熱式導流筒Heated deflector

本發明涉及半導體晶體生長領域，特別是涉及一種加熱式導流筒。The invention relates to the field of semiconductor crystal growth, in particular to a heating type deflector.

在使用拉晶爐通過直拉法生長半導體單晶的過程中，導流筒是拉晶爐中控制熱場的重要部件，可以起到引導氬氣流及控制熱場溫度梯度的作用。目前，在生長不同類型的單晶時，需要更換不同結構的導流筒以獲得不同的生長熱場。但僅依靠改變導流筒結構對於生長熱場的調節作用是有限的，已無法滿足單晶矽生長工藝的發展對於熱場調節愈加精細的要求。In the process of using a crystal pulling furnace to grow semiconductor single crystals by the Czochralski method, the flow guide cylinder is an important part of the crystal pulling furnace to control the thermal field, and can play a role in guiding the argon flow and controlling the temperature gradient of the thermal field. At present, when growing different types of single crystals, it is necessary to replace flow guide tubes with different structures to obtain different growth thermal fields. However, only relying on changing the structure of the flow guide tube to adjust the growth thermal field is limited, and it has been unable to meet the requirements of the development of the single crystal silicon growth process for the more refined thermal field adjustment.

因此，有必要提出一種新的加熱式導流筒，解決上述問題。Therefore, it is necessary to propose a new heated guide tube to solve the above-mentioned problems.

鑒於以上所述現有技術的缺點，本發明的目的在於提供一種加熱式導流筒，用於解決現有技術需要頻繁更換導流筒以及熱場調節能力不足的問題。In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a heated diversion tube, which is used to solve the problems of frequent replacement of the diversion tube and insufficient thermal field adjustment ability in the prior art.

為實現上述目的及其它相關目的，本發明提供了一種加熱式導流筒，其特徵在於，包括： 上筒體，包含導通所述上筒體的頂部和底部的上通孔； 筒體，包含導通所述筒體的頂部和底部的導流通孔；及In order to achieve the above objectives and other related objectives, the present invention provides a heated guide tube, which is characterized in that it includes: The upper cylinder includes an upper through hole that connects the top and bottom of the upper cylinder; The cylinder includes a flow-through hole that leads through the top and bottom of the cylinder; and

具有加熱功能的下筒體，包含導通所述下筒體的頂部和底部的下通孔，所述下筒體的頂部連接所述上筒體的底部，所述上通孔和所述下通孔相連通並一同構成導流通孔。所述筒體還包含用於對所述筒體進行加熱的加熱裝置。作為本發明的一種可選方案，所述下筒體由電阻加熱材料構成；所述下筒體還設置有連接所述下筒體的輸入電極接頭，所述上筒體還設置有電源電極接頭，所述輸入電極接頭通過導線與所述電源電極接頭相連接，所述電源電極接頭連接外部電源。A lower cylinder with a heating function includes a lower through hole that connects the top and bottom of the lower cylinder, the top of the lower cylinder is connected to the bottom of the upper cylinder, the upper through hole and the lower through hole The holes are communicated and together constitute a flow-through hole. The barrel further includes a heating device for heating the barrel. As an optional solution of the present invention, the lower cylinder is made of resistance heating material; the lower cylinder is further provided with an input electrode connector connected to the lower cylinder, and the upper cylinder is also provided with a power electrode connector The input electrode connector is connected to the power electrode connector through a wire, and the power electrode connector is connected to an external power source.

作為本發明的一種可選方案，所述電阻加熱材料至少包含石墨。As an optional solution of the present invention, the resistance heating material at least contains graphite.

作為本發明的一種可選方案，所述輸入電極接頭的材料包括石墨。As an optional solution of the present invention, the material of the input electrode joint includes graphite.

作為本發明的一種可選方案，所述電源電極接頭的材料包括紫銅，所述導線包括水冷電纜。As an optional solution of the present invention, the material of the power supply electrode connector includes red copper, and the wire includes a water-cooled cable.

作為本發明的一種可選方案，所述輸入電極接頭形成於所述下筒體的頂部，所述電源電極接頭設置於所述上筒體的頂部。As an optional solution of the present invention, the input electrode connector is formed on the top of the lower cylinder, and the power electrode connector is provided on the top of the upper cylinder.

作為本發明的一種可選方案，所述上筒體內部還設有容納所述導線的容納腔。As an optional solution of the present invention, an accommodating cavity for accommodating the wire is further provided inside the upper cylinder.

作為本發明的一種可選方案，所述容納腔中填充有隔熱材料層，所述隔熱材料層填滿所述容納腔並包覆所述導線。As an optional solution of the present invention, the accommodating cavity is filled with a heat-insulating material layer, and the heat-insulating material layer fills the accommodating cavity and covers the wire.

作為本發明的一種可選方案，所述上筒體還包括掛鉤結構，所述掛鉤結構設置於所述上筒體的頂部的外緣，連接用於控制所述加熱式導流筒升降的升降導杆，所述電源電極接頭位於所述掛鉤結構內，並通過所述升降導杆內的電源線連接外部電源。As an optional solution of the present invention, the upper cylinder further includes a hook structure, the hook structure is arranged on the outer edge of the top of the upper cylinder, and is connected to control the lifting of the heated deflector. The guide rod, the power electrode connector is located in the hook structure, and is connected to an external power source through the power cord in the lifting guide rod.

作為本發明的一種可選方案，所述下筒體的高度占所述上筒體的高度的四分之一至二分之一。As an optional solution of the present invention, the height of the lower cylinder occupies one quarter to one half of the height of the upper cylinder.

作為本發明的一種可選方案，所述上筒體的組成材料包含石墨。As an optional solution of the present invention, the constituent material of the upper cylinder includes graphite.

如上所述，本發明提供了一種加熱式導流筒，通過引入具有加熱功能的下筒體，在生長不同類型的單晶時，通過加熱下筒體調節晶體生長熱場，避免了因頻繁更換導流筒而導致維護成本增加的問題。此外，通過加熱下筒體也增強了對生長熱場的工藝調節能力，使單晶生長過程更為可控。As mentioned above, the present invention provides a heated guide tube. By introducing a lower tube with heating function, when different types of single crystals are grown, the lower tube is heated to adjust the crystal growth thermal field, avoiding frequent replacement. The problem of increased maintenance costs caused by the guide tube. In addition, heating the lower cylinder also enhances the ability to adjust the process of the growth thermal field, making the single crystal growth process more controllable.

以下通過特定的具體實例說明本發明的實施方式，本領域技術人員可由本說明書所揭露的內容輕易地瞭解本發明的其它優點與功效。本發明還可以通過另外不同的具體實施方式加以實施或應用，本說明書中的各項細節也可以基於不同觀點與應用，在沒有背離本發明的精神下進行各種修飾或改變。The following describes the implementation of the present invention through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

請參閱圖1至圖7。需要說明的是，本實施例中所提供的圖示僅以示意方式說明本發明的基本構想，雖圖示中僅顯示與本發明中有關的組件而非按照實際實施時的元件數目、形狀及尺寸繪製，其實際實施時各元件的形態、數量及比例可為一種隨意的改變，且其元件佈局形態也可能更為複雜。Please refer to Figure 1 to Figure 7. It should be noted that the illustrations provided in this embodiment only illustrate the basic idea of the present invention in a schematic manner, although the illustrations only show the components related to the present invention rather than the number, shape and number of elements in actual implementation. For size drawing, the shape, number, and ratio of each element can be changed at will during actual implementation, and the element layout form may also be more complicated.

實施例一Example one

請參閱圖1至圖3，本發明提供了一種加熱式導流筒10，包括：Please refer to Figures 1 to 3, the present invention provides a heated guide tube 10, including:

上筒體101，包含導通所述上筒體101的頂部和底部的上通孔103a；The upper cylinder 101 includes an upper through hole 103a that connects the top and bottom of the upper cylinder 101;

具有加熱功能的下筒體102，包含導通所述下筒體102的頂部和底部的下通孔103b，所述下筒體102的頂部連接所述上筒體101的底部，所述上通孔103a和所述下通孔103b相連通並一同構成導流通孔103。The lower cylinder 102 with a heating function includes a lower through hole 103b that connects the top and bottom of the lower cylinder 102, the top of the lower cylinder 102 is connected to the bottom of the upper cylinder 101, and the upper through hole 103a and the lower through hole 103b are in communication and together constitute a flow-through hole 103.

在本發明所提供的加熱式導流筒10內設有導通其頂部和底部的導流通孔103，在單晶生長時，氬氣氣流通過所述導流通孔103對生長介面以及晶錠進行保護及冷卻；所述加熱式導流筒10還包含具有加熱功能的下筒體102，通過加熱可以在導流筒現有結構的基礎上進一步調節單晶生長熱場。如圖1A所示，是本發明的一個實施例所提供的所述加熱式導流筒10的正視圖。圖1B是所述加熱式導流筒10在圖1A中B方向的側視圖。圖1C是所述加熱式導流筒10在圖1B中CC’處的截面示意圖。圖2是所述加熱式導流筒10的俯視圖，圖3是所述加熱式導流筒10的仰視圖。The heating type guide tube 10 provided by the present invention is provided with a flow guide hole 103 that leads to the top and bottom thereof. When a single crystal grows, the argon gas flows through the guide flow hole 103 to protect the growth interface and the crystal ingot. And cooling; the heated guide tube 10 also includes a lower tube body 102 with a heating function, through heating can further adjust the single crystal growth thermal field on the basis of the existing structure of the guide tube. As shown in FIG. 1A, it is a front view of the heating type guide tube 10 provided by an embodiment of the present invention. FIG. 1B is a side view of the heating guide tube 10 in the direction B in FIG. 1A. Fig. 1C is a schematic cross-sectional view of the heating guide tube 10 at CC' in Fig. 1B. FIG. 2 is a top view of the heated flow guide tube 10, and FIG. 3 is a bottom view of the heated flow guide tube 10.

作為示例，請參閱圖1至圖3，所述加熱式導流筒10包含上筒體101和下筒體102，所述上筒體101包含導通所述上筒體101的頂部和底部的上通孔103a，所述下筒體102包含導通所述下筒體102的頂部和底部的下通孔103b，所述下筒體102的頂部連接所述上筒體101的底部，使所述上通孔103a和所述下通孔103b相連通並一同構成導流通孔103。如圖1C所示，所述下筒體102由電阻加熱材料構成，所述電阻加熱材料包括石墨；所述下筒體102還設置有連接所述下筒體102的輸入電極接頭102a，，所述輸入電極接頭102a提供電源，通過對所述下筒體102的通電加熱，改變所述下筒體102附近的熱場分佈。在本實施例中，所述下筒體102本身是由可以通電加熱的石墨材料構成的，通過輸入電極接頭102a直接對整個下筒體102進行通電加熱。石墨具有優良的導電、導熱性能，也是具有耐高溫性能的電熱材料。所述輸入電極接頭102a的材料也包括石墨。此外，為了確保所述輸入電極接頭102a僅對所述下筒體102進行供電，在所述上筒體101和所述下筒體102之間還可以設置耐高溫的絕緣材料進行隔離，以確保所述所述下筒體102和所述輸入電極接頭102a與所述上筒體101之間不會導電。需要指出的是，在本發明其他實施例中，也可以通過在所述下筒體102的內部設置電熱絲等電加熱部件並連接輸入電極接頭實現所述下筒體102的通電加熱功能。As an example, please refer to Figures 1 to 3, the heating type deflector cylinder 10 includes an upper cylinder body 101 and a lower cylinder body 102, and the upper cylinder body 101 includes an upper cylinder connecting the top and bottom of the upper cylinder 101. Through hole 103a, the lower cylinder 102 includes a lower through hole 103b that connects the top and bottom of the lower cylinder 102, and the top of the lower cylinder 102 is connected to the bottom of the upper cylinder 101, so that the upper cylinder 102 is connected to the bottom of the upper cylinder 101. The through hole 103a and the lower through hole 103b are in communication and together constitute a flow-through hole 103. As shown in Figure 1C, the lower cylinder 102 is composed of a resistance heating material, the resistance heating material includes graphite; the lower cylinder 102 is also provided with an input electrode connector 102a connected to the lower cylinder 102, so The input electrode connector 102a provides power, and by energizing and heating the lower cylinder 102, the thermal field distribution near the lower cylinder 102 is changed. In this embodiment, the lower cylinder 102 itself is made of graphite material that can be energized and heated, and the entire lower cylinder 102 is directly energized and heated through the input electrode connector 102a. Graphite has excellent electrical and thermal conductivity, and is also an electrothermal material with high temperature resistance. The material of the input electrode connector 102a also includes graphite. In addition, in order to ensure that the input electrode connector 102a only supplies power to the lower cylinder 102, a high-temperature resistant insulating material can be provided between the upper cylinder 101 and the lower cylinder 102 for isolation to ensure There is no electrical conduction between the lower cylinder 102 and the input electrode connector 102a and the upper cylinder 101. It should be pointed out that in other embodiments of the present invention, electric heating components such as heating wires may also be provided inside the lower cylinder 102 and connected to an input electrode connector to realize the energized heating function of the lower cylinder 102.

作為示例，如圖1C所示，所述上筒體101的頂部還設置有電源電極接頭101a，所述輸入電極接頭102a通過導線101b與所述電源電極接頭101a相連接，所述電源電極接頭101a連接外部電源，其中，所述電源電極接頭101a的材料包括紫銅，所述導線101b包括水冷電纜。由於所述電源電極接頭101a位於所述上筒體101的頂部，離熱源已較遠，因此可以採用耐熱性能較石墨低，但機械強度更好的紫銅接頭；所述導線101b由於需要長期工作在高溫環境下，因此可以採用水冷電纜，以通過外接迴圈冷卻水，避免導線在高溫下損壞。所述上筒體內部還設有容納所述導線101b的容納腔，所述導線101b設置於所述容納腔中，並連接位於所述上筒體101頂部的所述電源電極接頭101a以及位於所述下筒體102頂部的所述輸入電極接頭102a。具體地，所述上筒體101由內筒壁101c及套設於所述內筒壁101c外側的外筒壁101d構成，在所述內筒壁101c與所述外筒壁101d之間的空間形成容納腔。所述容納腔也可以僅佔據所述下筒體102內部的部分空間，只需確保有足夠的空間容納所述導線101b即可。可選地，在所述容納腔中還填充有隔熱材料層101f，所述隔熱材料層101f填滿所述容納腔並包覆所述導線101b。構成所述隔熱材料層101f的材料具備隔熱保溫的效果，以確保所述加熱式導流筒10的加熱效果，優化晶體生長熱場，同時也可以防止熱場溫度過高對於所述水冷電纜的損壞。在本發明其他實施例中，也可以通過在上筒體上開挖溝槽等方式設置所述水冷電纜，或者所述水冷電纜直接鋪設於所述上筒體的內壁或者外壁。As an example, as shown in FIG. 1C, the top of the upper cylinder 101 is also provided with a power electrode connector 101a, the input electrode connector 102a is connected to the power electrode connector 101a through a wire 101b, and the power electrode connector 101a An external power source is connected, wherein the material of the power electrode connector 101a includes copper, and the wire 101b includes a water-cooled cable. Since the power electrode connector 101a is located on the top of the upper cylinder 101, far away from the heat source, a copper connector with lower heat resistance than graphite but better mechanical strength can be used; the wire 101b needs to work for a long time. In high temperature environments, water-cooled cables can be used to cool the water through an external loop to avoid damage to the wires at high temperatures. The upper cylinder body is also provided with a accommodating cavity for accommodating the wire 101b. The wire 101b is arranged in the accommodating cavity and connected to the power electrode connector 101a on the top of the upper cylinder body 101 and The input electrode connector 102a on the top of the lower cylinder 102 is described. Specifically, the upper cylinder 101 is composed of an inner cylinder wall 101c and an outer cylinder wall 101d sleeved outside the inner cylinder wall 101c, and the space between the inner cylinder wall 101c and the outer cylinder wall 101d Form a receiving cavity. The accommodating cavity may also only occupy a part of the space inside the lower cylinder 102, and it is only necessary to ensure that there is enough space to accommodate the wire 101b. Optionally, the accommodating cavity is further filled with a heat-insulating material layer 101f, and the heat-insulating material layer 101f fills the accommodating cavity and covers the wire 101b. The material constituting the thermal insulation material layer 101f has the effect of thermal insulation, so as to ensure the heating effect of the heating guide tube 10, optimize the crystal growth thermal field, and prevent the thermal field temperature from being too high for the water cooling Damage to the cable. In other embodiments of the present invention, the water-cooled cable can also be provided by digging a groove on the upper cylinder, or the water-cooled cable is directly laid on the inner or outer wall of the upper cylinder.

作為示例，如圖1A~1C所示，所述上筒體101還包括掛鉤結構101e，所述掛鉤結構101e設置於所述上筒體101的頂部的外緣，連接用於控制所述加熱式導流筒10升降的升降導杆，所述電源電極接頭101a位於所述掛鉤結構101e內，並通過所述升降導杆內的電源線連接外部電源。在本實施例中，在所述上筒體101頂部外緣兩側的相對位置設置了一對掛鉤結構101a，用以連接一對升降導杆。在本發明的其他實施方案中，還可以設置與所述升降導杆數量相對應的多個所述掛鉤結構101a；或者所述掛鉤結構101a還可以設置為環繞所述上筒體101頂部外緣一圈的連體式結構。拉晶爐中的導流筒一般通過所述升降導杆連接固定並懸掛於物料坩堝的上方，並由所述升降導杆控制升降。本實施例利用所述升降導杆作為電源連接通道，通過在所述掛鉤結構101e中設置所述電源電極接頭101a，並將所述電源電極接頭101a連接所述升降導杆內的電源線，並連接至外部電源。As an example, as shown in FIGS. 1A to 1C, the upper cylinder 101 further includes a hook structure 101e, which is arranged on the outer edge of the top of the upper cylinder 101 and is connected to control the heating type The lifting guide rod of the guide tube 10 ascending and descending, the power electrode connector 101a is located in the hook structure 101e, and is connected to an external power source through a power cord in the lifting guide rod. In this embodiment, a pair of hook structures 101a are provided at opposite positions on both sides of the outer edge of the top of the upper cylinder 101 to connect a pair of lifting guide rods. In other embodiments of the present invention, a plurality of the hook structures 101a corresponding to the number of the lifting guide rods may also be provided; or the hook structures 101a may also be provided to surround the outer edge of the top of the upper cylinder 101 One-circle conjoined structure. The guide tube in the crystal pulling furnace is generally connected and fixed by the lifting guide rod and hung above the material crucible, and the lifting guide rod controls the lifting. In this embodiment, the lifting guide rod is used as a power connection channel, and the power electrode connector 101a is provided in the hook structure 101e, and the power electrode connector 101a is connected to the power cord in the lifting guide rod, and Connect to an external power source.

作為示例，所述下筒體102的高度占所述上筒體101的高度的四分之一至二分之一。可選地，所述下筒體102的高度占所述上筒體101的高度的三分之一。在設計所述下筒體102占整個所述加熱式導流筒10的比例時，需要考慮引入所述下筒體102的加熱對於晶體生長熱場分佈的影響，其在整個導流筒的所占比例決定了所述下筒體102的加熱效果以及對於生長熱場的調節能力。在本實施例中，如圖1C所示，選取所述下筒體102的高度占所述上筒體101的高度的三分之一，此時，所述下筒體102對熱場具有較好的調節能力，既能對生長介面附近提供加熱，又不影響到已生長的上部晶錠。As an example, the height of the lower cylinder 102 occupies one quarter to one half of the height of the upper cylinder 101. Optionally, the height of the lower cylinder 102 accounts for one third of the height of the upper cylinder 101. When designing the proportion of the lower cylinder 102 to the entire heating type deflector 10, it is necessary to consider the influence of the heating introduced into the lower cylinder 102 on the distribution of the crystal growth thermal field, which is located in the entire deflector. The proportion determines the heating effect of the lower cylinder 102 and its ability to adjust the growth thermal field. In this embodiment, as shown in FIG. 1C, the height of the lower cylinder 102 is selected to account for one-third of the height of the upper cylinder 101. At this time, the lower cylinder 102 has a greater impact on the thermal field. Good adjustment ability can not only provide heating near the growth interface, but also does not affect the grown upper ingot.

作為示例，在本實施例中，所述下筒體102的下底面為平面結構。如圖4所示，是採用下底面為平面結構的所述加熱式導流筒10在單晶生長時的示意圖。在生長用於磊晶基板片的單晶矽時，一般要求加強單晶生長介面附近的散熱；而在生長用於拋光片的單晶矽時，需要減少單晶生長介面附近的散熱。現有技術一般通過改變導流筒結構，進而獲得生長所需的熱場條件。例如，將下筒體102的下底面設計為平面結構，以利於對流散熱；或者，在所述下筒體102的下底面上形成有用於儲熱的凹槽，以利於保溫，減少散熱。但僅通過改變導流筒結構對生長熱場的調節能力是有限的。在本實施例中，在所述下筒體102的下底面為平面結構的基礎上，通過引入可以加熱的所述下筒體102來調節熱場。在圖4中，從上方通入的氬氣氣流在所述加熱式導流筒10的引導下向下方流動，而從坩堝001中的物料液面處會由於加熱產生向上的熱對流，兩者在晶錠002的生長介面附近相遇，並向所述加熱式導流筒10的週邊擴散，即所述氬氣氣流會帶走從物料液面處對流的部分熱量。通過所述下筒體102的加熱，可以補充在所述晶錠002生長介面附近的熱量。當需要加強單晶生長介面附近的散熱時，例如在生長用於磊晶基板片的單晶矽時，所述下筒體102不進行加熱，熱量更容易從所述下筒體102的下底面擴散到所述加熱式導流筒10的週邊，通過對流散熱，提高了生長介面附近的溫度梯度，以利於用於磊晶基板片的單晶矽的生長；而當需要提高單晶生長介面附近的熱場溫度時，例如在生長用於拋光片的單晶矽時，對所述下筒體102進行加熱，進而補償生長介面附近散熱導致的熱量損失，獲得生長所需的溫度更高的熱場分佈。As an example, in this embodiment, the lower bottom surface of the lower cylinder 102 has a planar structure. As shown in FIG. 4, it is a schematic diagram of the heating-type guide tube 10 with a flat bottom surface during single crystal growth. When growing monocrystalline silicon for epitaxial wafers, it is generally required to strengthen the heat dissipation near the single crystal growth interface; while growing monocrystalline silicon for polishing wafers, it is necessary to reduce the heat dissipation near the single crystal growth interface. In the prior art, the structure of the flow guide tube is generally changed to obtain the thermal field conditions required for growth. For example, the lower bottom surface of the lower cylinder 102 is designed as a plane structure to facilitate convective heat dissipation; or, a groove for storing heat is formed on the lower bottom surface of the lower cylinder 102 to facilitate heat preservation and reduce heat dissipation. However, the ability to adjust the growth thermal field only by changing the structure of the deflector is limited. In this embodiment, on the basis that the lower bottom surface of the lower cylinder 102 is a flat structure, the heat field is adjusted by introducing the lower cylinder 102 that can be heated. In FIG. 4, the argon gas flow introduced from above flows downward under the guidance of the heating guide tube 10, and the material level in the crucible 001 will generate upward thermal convection due to heating. It meets near the growth interface of the ingot 002 and diffuses toward the periphery of the heated deflector 10, that is, the argon gas flow will take away part of the heat convection from the liquid surface of the material. Through the heating of the lower cylinder 102, the heat near the growth interface of the crystal ingot 002 can be supplemented. When it is necessary to strengthen the heat dissipation near the single crystal growth interface, for example, when growing single crystal silicon for epitaxial substrates, the lower cylinder 102 is not heated, and the heat is more likely to escape from the lower bottom surface of the lower cylinder 102. Diffuses to the periphery of the heated guide tube 10, through convective heat dissipation, the temperature gradient near the growth interface is increased to facilitate the growth of monocrystalline silicon used for epitaxial substrates; and when it is necessary to increase the vicinity of the monocrystalline growth interface For example, when growing single crystal silicon for polishing wafers, the lower cylinder 102 is heated to compensate for the heat loss caused by heat dissipation near the growth interface, and obtain higher temperature heat required for growth. Field distribution.

作為示例，如圖1C所示，所述導流通孔的徑向尺寸自上而下逐漸減小。所述導流通孔103由所述上通孔103a和所述下通孔103b所共同構成。在拉晶爐生長單晶的過程中，作為保護氣體的氬氣一般從爐體上方通入，通過徑向尺寸自上而下逐漸減小的漏斗狀設計，可以將氬氣氣流集中于單晶的生長介面附近，從而保護單晶生長。As an example, as shown in FIG. 1C, the radial size of the flow-conducting hole gradually decreases from top to bottom. The flow-through hole 103 is formed by the upper through hole 103a and the lower through hole 103b. In the process of growing single crystals in a crystal pulling furnace, argon as a protective gas is generally introduced from the top of the furnace body. Through a funnel-shaped design with radial dimensions gradually decreasing from top to bottom, the argon gas flow can be concentrated on the single crystal. Near the growth interface, thereby protecting the single crystal growth.

作為示例，如圖1C所示，所述加熱式導流筒10的外壁的徑向尺寸自上而下逐漸減小。雖然影響單晶生長的熱場因素主要由所述加熱式導流筒10內部的結構所決定，但所述加熱式導流筒10的外壁形貌也對爐體內的對流條件具有一定影響。在本實施例中，所述加熱式導流筒10的外壁的徑向尺寸自上而下逐漸減小。可選的，所述加熱式導流筒10的內壁與外壁徑向尺寸在同一高度的差值是固定的，即所述加熱式導流筒10在各處的筒壁厚度是相同的。As an example, as shown in FIG. 1C, the radial dimension of the outer wall of the heating type guide tube 10 gradually decreases from top to bottom. Although the thermal field factors that affect the growth of single crystals are mainly determined by the internal structure of the heated draft tube 10, the morphology of the outer wall of the heated draft tube 10 also has a certain influence on the convection conditions in the furnace body. In this embodiment, the radial dimension of the outer wall of the heated guide tube 10 gradually decreases from top to bottom. Optionally, the difference between the radial dimensions of the inner wall and the outer wall of the heated guide tube 10 at the same height is fixed, that is, the thickness of the tube wall of the heated guide tube 10 is the same everywhere.

作為示例，所述上筒體101的組成材料包含石墨。石墨具有耐高溫、導熱性能強、抗腐蝕性能好及使用壽命長等特點，是一種理想的用於高溫爐體的部件材料。在本發明的其他實施例中，所述組成材料還包括碳化矽、陶瓷或石英等其他耐高溫材料。As an example, the constituent material of the upper cylinder 101 includes graphite. Graphite has the characteristics of high temperature resistance, strong thermal conductivity, good corrosion resistance and long service life. It is an ideal material for high-temperature furnace parts. In other embodiments of the present invention, the constituent material further includes other high temperature resistant materials such as silicon carbide, ceramics, or quartz.

實施例二Example two

如圖5和圖6所示，本實施例中的方案與實施例一的不同之處在於，所述下筒體102的下底面上形成有用於儲熱的凹槽102b。所述凹槽102b包含環狀凹槽結構，且所述環狀凹槽結構的圓心位於所述導流通孔103的軸線上。圖5是所述加熱式導流筒10的截面示意圖，圖6是其仰視圖，本實施例所述加熱式導流筒10的俯視圖與圖2相同。As shown in Figs. 5 and 6, the difference between the solution in this embodiment and the first embodiment is that a groove 102b for storing heat is formed on the lower bottom surface of the lower cylinder 102. The groove 102b includes a ring-shaped groove structure, and the center of the ring-shaped groove structure is located on the axis of the flow-conducting hole 103. FIG. 5 is a schematic cross-sectional view of the heating type deflector 10, FIG. 6 is a bottom view thereof, and the top view of the heating type deflector 10 of this embodiment is the same as FIG. 2.

如圖7所示，是採用下底面上形成有凹槽102b的所述加熱式導流筒10在單晶生長時的示意圖。在本實施例中，在一些單晶生長的熱場條件中，需要維持較高的熱場溫度並減少散熱，僅依靠所述下筒體102自身加熱可能還無法完全滿足熱場分佈要求，因此在所述下筒體102的下底面上形成有凹槽102b，通過凹槽結構進行儲熱，從而減少散熱。在圖7中，從上方通入的氬氣氣流在所述加熱式導流筒10的引導下向下方流動，而從坩堝001中的物料液面處會由於加熱產生向上的熱對流，兩者在晶錠002的生長介面附近相遇，並沿著所述加熱式導流筒10的底部向週邊擴散，即所述氬氣氣流會帶走從物料液面處對流的部分熱量。而通過在所述下筒體102的下底面上形成有凹槽102b，則氣流在通過所述凹槽102b會有部分熱量停留並儲存於所述凹槽102b中，這就減少了整個系統的散熱。在所述下筒體102自身加熱的前提下，依靠所述凹槽102b還可以使晶體生長介面附近進一步保留更多熱量。在本實施例中，所述凹槽102b包含一圈環狀凹槽結構，在本發明的其他實施例中，所述凹槽102b還可以採用多圈具有相同圓心的環狀凹槽結構，或者採用以其他任何可能的幾何圖案排布在所述下筒體102的下底面上的凹槽結構。此外，所述下筒體102還可以根據不同晶體生長的熱場分佈需要，採用其他可能的結構外形。As shown in FIG. 7, it is a schematic diagram of the heating type guide tube 10 with a groove 102 b formed on the bottom surface during single crystal growth. In this embodiment, in some thermal field conditions for single crystal growth, it is necessary to maintain a higher thermal field temperature and reduce heat dissipation. Only relying on the heating of the lower cylinder 102 itself may not fully meet the thermal field distribution requirements, so A groove 102b is formed on the bottom surface of the lower cylinder 102 to store heat through the groove structure, thereby reducing heat dissipation. In Fig. 7, the argon gas flow introduced from above flows downward under the guidance of the heating guide tube 10, and the material level in the crucible 001 will generate upward thermal convection due to heating. They meet near the growth interface of the crystal ingot 002 and diffuse along the bottom of the heated guide tube 10 to the periphery, that is, the argon gas flow will take away part of the heat convection from the liquid surface of the material. By forming a groove 102b on the lower bottom surface of the lower cylinder 102, part of the heat of the airflow passing through the groove 102b will stay and be stored in the groove 102b, which reduces the overall system cost. Heat dissipation. Under the premise that the lower cylinder 102 is heated by itself, the groove 102b can further retain more heat near the crystal growth interface. In this embodiment, the groove 102b includes a ring-shaped groove structure. In other embodiments of the present invention, the groove 102b may also adopt multiple ring-shaped groove structures with the same center, or The groove structure arranged on the lower bottom surface of the lower cylinder 102 in any other possible geometric pattern is adopted. In addition, the lower cylinder body 102 can also adopt other possible structural shapes according to the thermal field distribution requirements of different crystal growth.

綜上所述，本發明提供了一種加熱式導流筒，包括：上筒體，包含導通所述上筒體的頂部和底部的上通孔；具有加熱功能的下筒體，包含導通所述下筒體的頂部和底部的下通孔，所述下筒體的頂部連接所述上筒體的底部，所述上通孔和所述下通孔相連通並一同構成導流通孔。本發明所提供的加熱式導流筒，通過引入具有加熱功能的下筒體，在生長不同類型的單晶時，通過下筒體加熱調節晶體生長熱場，避免了因頻繁更換不同結構的導流筒而導致維護成本增加的問題。此外，通過加熱下筒體也增強了對生長熱場的工藝調節能力，使單晶生長過程更為可控。In summary, the present invention provides a heating type deflector, including: an upper cylinder, including upper through holes that communicate with the top and bottom of the upper cylinder; and a lower cylinder with heating function, including: There are lower through holes at the top and bottom of the lower cylinder, the top of the lower cylinder is connected to the bottom of the upper cylinder, and the upper through hole and the lower through hole are connected to form a flow-through hole. The heating type deflector provided by the present invention introduces a lower cylinder with heating function. When different types of single crystals are grown, the lower cylinder is heated to adjust the crystal growth thermal field, which avoids frequent replacement of guides with different structures. The problem of increased maintenance costs caused by the flow tube. In addition, heating the lower cylinder also enhances the ability to adjust the process of the growth thermal field, making the single crystal growth process more controllable.

本發明已經利用上述實施例進行了說明，但應當理解的是，上述實施例只是用於舉例和說明的目的，而非意在將本發明限制於所描述的實施例範圍內。此外本領域技術人員可以理解的是，本發明並不局限於上述實施例，根據本發明的教導還可以做出更多種的變型和修改，這些變型和修改均落在本發明所要求保護的範圍以內。本發明的保護範圍由附屬的申請專利範圍及其等效範圍所界定。The present invention has been described using the above-mentioned embodiments, but it should be understood that the above-mentioned embodiments are only for the purpose of illustration and description, and are not intended to limit the present invention to the scope of the described embodiments. In addition, those skilled in the art can understand that the present invention is not limited to the above-mentioned embodiments, and more variations and modifications can be made according to the teachings of the present invention, and these variations and modifications fall under the protection of the present invention. Within the range. The protection scope of the present invention is defined by the attached patent application scope and its equivalent scope.

001:坩堝 002:晶錠 10:加熱式導流筒 101:上筒體 101a:電源電極接頭 101b:導線 101c:內筒壁 101d:外筒壁 101e:掛鈎結構 101f:絕熱材料層 102:下筒體 102a:輸入電極接頭 102b:凹槽 103:導流通孔 103a:上通孔 103b:下通孔 001: Crucible 002: Crystal Ingot 10: Heated deflector 101: Upper cylinder 101a: Power electrode connector 101b: Wire 101c: inner cylinder wall 101d: outer cylinder wall 101e: hook structure 101f: Insulation material layer 102: lower cylinder 102a: Input electrode connector 102b: groove 103: Guiding through holes 103a: upper through hole 103b: Lower through hole

本發明的下列附圖在此作為本發明的一部分用於理解本發明。附圖中示出了本發明的實施例及其描述，用來解釋本發明的原理。 附圖中：The following drawings of the present invention are used here as a part of the present invention for understanding the present invention. The drawings show the embodiments of the present invention and the description thereof to explain the principle of the present invention. In the attached picture:

圖1A顯示為本發明實施例一中提供的加熱式導流筒的正視圖。Fig. 1A shows a front view of the heating type deflector provided in the first embodiment of the present invention.

圖1B顯示為本發明實施例一中提供的加熱式導流筒在圖1A中B方向的側視圖。FIG. 1B shows a side view of the heating guide tube provided in the first embodiment of the present invention in the direction B in FIG. 1A.

圖1C顯示為本發明實施例一中提供的加熱式導流筒在圖1B中CC’處的截面示意圖。Fig. 1C is a schematic cross-sectional view of the heating guide tube provided in the first embodiment of the present invention at CC' in Fig. 1B.

圖2顯示為本發明實施例一中提供的加熱式導流筒的俯視圖。Fig. 2 shows a top view of the heating type deflector provided in the first embodiment of the present invention.

圖3顯示為本發明實施例一中提供的加熱式導流筒的仰視圖。Fig. 3 shows a bottom view of the heated guide tube provided in the first embodiment of the present invention.

圖4顯示為本發明實施例一中提供的加熱式導流筒在單晶生長時的示意圖。FIG. 4 is a schematic diagram of the heating type deflector provided in the first embodiment of the present invention during the growth of a single crystal.

圖5顯示為本發明實施例二中提供的加熱式導流筒的截面示意圖。Fig. 5 shows a schematic cross-sectional view of the heating type deflector provided in the second embodiment of the present invention.

圖6顯示為本發明實施例二中提供的加熱式導流筒的仰視圖。Fig. 6 shows a bottom view of the heated guide tube provided in the second embodiment of the present invention.

圖7顯示為本發明實施例二中提供的加熱式導流筒在單晶生長時的示意圖。FIG. 7 is a schematic diagram of the heating type deflector provided in the second embodiment of the present invention during the growth of a single crystal.

10:加熱式導流筒 10: Heated deflector

101:上筒體 101: Upper cylinder

101a:電源電極接頭 101a: Power electrode connector

101b:導線 101b: Wire

101c:內筒壁 101c: inner cylinder wall

101d:外筒壁 101d: outer cylinder wall

101e:掛鈎結構 101e: hook structure

101f:絕熱材料層 101f: Insulation material layer

102:下筒體 102: lower cylinder

102a:輸入電極接頭 102a: Input electrode connector

103:導流通孔 103: Guiding through holes

103a:上通孔 103a: upper through hole

103b:下通孔 103b: Lower through hole

Claims (9)

一種加熱式導流筒，包括：上筒體，包含導通所述上筒體的頂部和底部的上通孔；具有加熱功能的下筒體，包含導通所述下筒體的頂部和底部的下通孔，所述下筒體的頂部連接所述上筒體的底部，所述上通孔和所述下通孔相連通並一同構成導流通孔，其中所述下筒體由電阻加熱材料構成；所述下筒體還設置有連接所述下筒體的輸入電極接頭，所述上筒體還設置有電源電極接頭，所述輸入電極接頭通過導線與所述電源電極接頭相連接，所述電源電極接頭連接外部電源，而且其中所述上筒體還包括掛鉤結構，所述掛鉤結構設置於所述上筒體的頂部的外緣，連接用於控制所述加熱式導流筒升降的升降導杆，所述電源電極接頭位於所述掛鉤結構內，並通過所述升降導杆內的電源線連接外部電源。 A heating type deflector cylinder, comprising: an upper cylinder body, including upper through holes that connect the top and bottom of the upper cylinder body; a lower cylinder body with a heating function, including a lower cylinder body that conducts the top and bottom of the lower cylinder body Through hole, the top of the lower cylinder is connected to the bottom of the upper cylinder, the upper through hole and the lower through hole are connected to form a flow-through hole, wherein the lower cylinder is made of resistance heating material The lower cylinder is also provided with an input electrode connector connecting the lower cylinder, the upper cylinder is also provided with a power electrode connector, the input electrode connector is connected to the power electrode connector through a wire, the The power electrode connector is connected to an external power source, and wherein the upper cylinder further includes a hook structure, the hook structure is arranged on the outer edge of the top of the upper cylinder, and is connected to control the lifting of the heating diversion cylinder The guide rod, the power electrode connector is located in the hook structure, and is connected to an external power source through the power cord in the lifting guide rod. 根據請求項1所述的加熱式導流筒，其中所述電阻加熱材料至少包含石墨。 The heating type flow deflector according to claim 1, wherein the resistance heating material includes at least graphite. 根據請求項1所述的加熱式導流筒，其中所述輸入電極接頭的材料包括石墨。 The heated draft tube according to claim 1, wherein the material of the input electrode joint includes graphite. 根據請求項1所述的加熱式導流筒，其中所述電源電極接頭的材料包括紫銅，所述導線包括水冷電纜。 The heating type deflector according to claim 1, wherein the material of the power electrode joint includes copper, and the wire includes a water-cooled cable. 根據請求項1所述的加熱式導流筒，其中所述輸入電極接頭形成於所述下筒體的頂部，所述電源電極接頭設置於所述上筒體的頂部。 The heated diversion cylinder according to claim 1, wherein the input electrode connector is formed on the top of the lower cylinder, and the power electrode connector is provided on the top of the upper cylinder. 根據請求項5所述的加熱式導流筒，其中所述上筒體內部還設有容納所述導線的容納腔。 The heating type guide tube according to claim 5, wherein an accommodating cavity for accommodating the wire is further provided inside the upper cylinder. 根據請求項6所述的加熱式導流筒，其中所述容納腔中填充有隔熱材料層，所述隔熱材料層填滿所述容納腔並包覆所述導線。 The heating type deflector according to claim 6, wherein the containing cavity is filled with a layer of heat insulating material, and the layer of heat insulating material fills the containing cavity and covers the wire. 根據請求項1所述的加熱式導流筒，其中所述下筒體的高度占所述上筒體的高度的四分之一至二分之一。 The heated draft tube according to claim 1, wherein the height of the lower tube occupies one-fourth to one-half of the height of the upper tube. 根據請求項1所述的加熱式導流筒，其中所述上筒體的組成材料包含石墨。 The heating type deflector cylinder according to claim 1, wherein the constituent material of the upper cylinder includes graphite.
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