TWI729426B - Wafer carrier system and immersion lithography equipment - Google Patents

Wafer carrier system and immersion lithography equipment Download PDF

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TWI729426B
TWI729426B TW108122718A TW108122718A TWI729426B TW I729426 B TWI729426 B TW I729426B TW 108122718 A TW108122718 A TW 108122718A TW 108122718 A TW108122718 A TW 108122718A TW I729426 B TWI729426 B TW I729426B
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flow path
liquid
liquid flow
temperature
wafer carrier
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TW202001448A (en
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趙丹平
魏巍
羅晉
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大陸商上海微電子裝備（集團）股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

本發明提供一種晶片承載系統和沉浸式光刻設備，該晶片承載系統包括工件台，所述工件台的內部設置有若干條液體流路腔體，每條所述液體流路腔體以關於所述工件台的水平面中心點呈中心對稱的形式分布，相鄰兩條所述液體流路腔體內流通有相反流向的溫控液體。該沉浸式光刻設備包括主框架、照明系統、投影物鏡、浸沒頭。本發明能夠解決曝光過程中工件台的加減速運動對浸液滑移而導致工作台內液體的溫度波動的缺陷，具有提高光刻設備的曝光性能的效果。The present invention provides a wafer carrying system and an immersive lithography equipment. The wafer carrying system includes a workpiece table. A plurality of liquid flow path cavities are arranged inside the workpiece table. The center points of the horizontal plane of the workpiece table are distributed in a symmetrical form, and two adjacent liquid flow path cavities are circulated with temperature-controlled liquids of opposite flow directions. The immersion lithography equipment includes a main frame, an illumination system, a projection objective lens, and an immersion head. The invention can solve the defect that the acceleration and deceleration movement of the workpiece table causes the immersion liquid slippage during the exposure process to cause the temperature fluctuation of the liquid in the working table, and has the effect of improving the exposure performance of the photoetching equipment.

Description

晶片承載系統和沉浸式光刻設備Wafer carrier system and immersion lithography equipment

本發明係關於光刻技術領域，特別是關於一種晶片承載系統和沉浸式光刻設備。The present invention relates to the field of lithography technology, in particular to a wafer carrier system and immersion lithography equipment.

現代光刻設備以光學光刻為基礎，它利用光學系統將掩膜版上的圖形精確地投影曝光到塗過光阻劑的襯底（例如：矽片）上。沉浸式光刻是指在曝光鏡頭與矽片之間充滿水或更高折射率的浸沒液體，以取代傳統乾式光刻技術中對應的空氣。由於水的折射率比空氣大，這就使得透鏡組數值孔徑增大，進而可獲得更加小的特徵線寬。請參考圖1，現有的沉浸式光刻機，包括主框架1支撐一照明系統2、一投影物鏡4和一工件台8，工件台8上放置有一塗有感光光阻劑的矽片7。該沉浸式光刻機，將浸液（水）通過浸液限制機構6填充在投影物鏡4和矽片7之間。其中浸液限制機構6也稱為浸沒頭。工作時，工件台8帶動矽片7作高速的掃描、步進動作，浸沒頭6根據工件台8的運動狀態，在投影物鏡4的視場範圍，在浸沒頭6內提供一個穩定的浸液流場5，同時保證浸液流場5與外界的密封，保證液體不洩漏。掩模版3上的積體電路圖形通過照明系統2、投影物鏡4和浸液流場5中的浸液，以成像曝光的方式轉移到塗有感光光阻劑的矽片7上，從而完成曝光。Modern lithography equipment is based on optical lithography, which uses an optical system to accurately project and expose the pattern on the mask onto a photoresist-coated substrate (such as a silicon wafer). Immersive lithography refers to the filling of water or a higher refractive index immersion liquid between the exposure lens and the silicon wafer to replace the corresponding air in the traditional dry lithography technology. Since the refractive index of water is larger than that of air, this increases the numerical aperture of the lens group, and thus a smaller characteristic line width can be obtained. Please refer to FIG. 1, the existing immersion lithography machine includes a main frame 1 supporting an illumination system 2, a projection objective lens 4 and a workpiece table 8 on which a silicon wafer 7 coated with photosensitive photoresist is placed. In the immersion lithography machine, the immersion liquid (water) is filled between the projection objective lens 4 and the silicon wafer 7 through the immersion liquid restricting mechanism 6. The immersion liquid restriction mechanism 6 is also called an immersion head. When working, the workpiece table 8 drives the silicon wafer 7 to perform high-speed scanning and stepping actions. The immersion head 6 provides a stable immersion liquid in the immersion head 6 in the field of view of the projection objective lens 4 according to the movement state of the workpiece table 8. The flow field 5 ensures that the immersion liquid flow field 5 is sealed from the outside world to ensure that the liquid does not leak. The integrated circuit pattern on the reticle 3 passes through the immersion liquid in the illumination system 2, the projection objective 4 and the immersion liquid flow field 5, and is transferred to the silicon wafer 7 coated with photosensitive photoresist in the way of imaging exposure, thereby completing the exposure. .

請參考圖2，現有的沉浸式光刻機的工作原理如下：設置供液設備11，通過管路12向浸沒頭6供給浸液形成浸液流場5。在供液設備11中設置液體壓力單元和流量控制單元，將浸液供給的壓力、流量限制在一定範圍內。通過在供液設備11中設置水污染處理單元，將水中污染處理至符合浸液潔淨要求。通過在供液設備11中設置溫度控制單元，將供水處理至符合浸液溫度要求。設置供氣設備13，通過管路14連通浸沒頭6，用於浸液流場5及矽片7的超潔淨濕空氣補償。設置氣液回收設備15，通過與浸沒頭6連通的管路16用於回收氣體和液體。在供氣設備13與氣液回收設備15中設置超潔淨濕空氣壓力、流量控制單元，將供氣壓力、流量控制在一定範圍之內，設置氣液回收壓力、流量控制單元，將氣液回收壓力和流量控制在一定範圍之內；設置超潔淨濕空氣污染控制單元，將超潔淨濕空氣中污染處理至符合要求；設置超潔淨濕空氣溫度和濕度控制單元，將超潔淨濕空氣處理至符合溫度和濕度要求。Please refer to FIG. 2, the working principle of the existing immersion lithography machine is as follows: a liquid supply device 11 is provided, and an immersion liquid is supplied to the immersion head 6 through a pipeline 12 to form an immersion liquid flow field 5. The liquid supply device 11 is provided with a liquid pressure unit and a flow control unit to limit the pressure and flow rate of the immersion liquid supply within a certain range. By setting a water pollution treatment unit in the liquid supply device 11, the water pollution is treated to meet the requirements of immersion liquid cleanliness. By setting a temperature control unit in the liquid supply device 11, the water supply is processed to meet the requirements of the immersion liquid temperature. An air supply device 13 is provided, and the immersion head 6 is connected through a pipeline 14 for the ultra-clean humid air compensation of the immersion liquid flow field 5 and the silicon wafer 7. A gas-liquid recovery device 15 is provided to recover gas and liquid through a pipeline 16 communicating with the immersion head 6. Install ultra-clean humid air pressure and flow control units in the gas supply equipment 13 and gas-liquid recovery equipment 15 to control the supply pressure and flow within a certain range, and set up the gas-liquid recovery pressure and flow control units to recover the gas and liquid The pressure and flow rate are controlled within a certain range; the ultra-clean humid air pollution control unit is installed to treat the pollution in the ultra-clean humid air to meet the requirements; the ultra-clean humid air temperature and humidity control unit is set to process the ultra-clean humid air to meet the requirements Temperature and humidity requirements.

請參考圖2，由於現有的浸沒頭6的外部輪廓形式不一，但內部輪廓是與投影物鏡4的鏡頭呈幾何形狀匹配的錐形結構。供液設備11供給的浸液通過浸沒頭6內浸液供給流道流出後填充於投影物鏡4和矽片7之間，浸液通過浸沒頭6內浸液回收流道流出後，由氣液回收設備回收。因此，在物鏡4和矽片7之間形成了浸液流場5，要求浸液流場5中的液體處於持續流動狀態，無回流，且液體的成分、壓力場、速度場、溫度場瞬態和穩態變化小於一定範圍。Please refer to FIG. 2, because the existing immersion head 6 has different outer contour forms, but the inner contour is a tapered structure that matches the geometric shape of the lens of the projection objective 4. The immersion liquid supplied by the liquid supply device 11 flows out through the immersion liquid supply channel in the immersion head 6 and is filled between the projection objective 4 and the silicon wafer 7. After the immersion liquid flows out through the immersion liquid recovery channel in the immersion head 6, the gas and liquid Recycling equipment recycling. Therefore, an immersion liquid flow field 5 is formed between the objective lens 4 and the silicon wafer 7. The liquid in the immersion liquid flow field 5 is required to be in a continuous flow state without backflow, and the liquid composition, pressure field, velocity field, and temperature field are instantaneous. The change in state and steady state is less than a certain range.

請參考圖3，沉浸式光刻中，當矽片7相對浸液流場5運動時，浸液流場5邊緣彎液面會被拉伸出來，在矽片7表面形成液膜51，拉伸出來的液膜51會不斷蒸發並在蒸發過程中產生蒸發致冷作用。液膜51的蒸發是液體表面分子熱運動的結果，由於蒸發失去了動能較大的分子，使分子運動的平均動能減小而降低了液面溫度。液膜51在蒸發相變過程中須不斷吸收汽化潛熱；例如，在一個大氣壓下，1kg的水變成蒸汽要吸收2256kJ的熱量。液膜51的不斷蒸發吸熱將使矽片7溫度下降，直接導致矽片7產生熱變形；矽片7的熱變形會導致矽片7產生定位誤差（如Overlay等），最終影響設備曝光性能。3, in immersion lithography, when the silicon wafer 7 moves relative to the immersion liquid flow field 5, the meniscus at the edge of the immersion liquid flow field 5 will be stretched out, forming a liquid film 51 on the surface of the silicon wafer 7. The protruding liquid film 51 will continuously evaporate and produce an evaporative cooling effect during the evaporation process. The evaporation of the liquid film 51 is the result of the thermal movement of the molecules on the liquid surface. Because the evaporation loses molecules with larger kinetic energy, the average kinetic energy of the molecular movement is reduced and the liquid surface temperature is reduced. The liquid film 51 must continuously absorb the latent heat of vaporization during the evaporative phase change process; for example, under one atmospheric pressure, 1kg of water becomes steam to absorb 2256kJ of heat. The continuous evaporation and heat absorption of the liquid film 51 will reduce the temperature of the silicon wafer 7 and directly cause thermal deformation of the silicon wafer 7; the thermal deformation of the silicon wafer 7 will cause positioning errors (such as Overlay, etc.) of the silicon wafer 7 and ultimately affect the exposure performance of the equipment.

針對上述缺陷，在工件台8內部設置一系列溫控液體流路腔體，該溫控液體流路腔體內通溫控流體後用於控制工件台8溫度，補償矽片7表面液膜蒸發致冷產生的不利影響。但是，曝光過程中工件台8將不斷在水平面內不同方向進行加減速運動，運動方向為81表示，這將導致工件台8內液體相對工件台8產生滑移，即工件台8內的液體相對工件台8的流速產生波動，這將導致對矽片7表面液膜蒸發致冷作用的補償產生波動，經分析得出流速波動導致的矽片7局部溫度變化約0.001℃，這將導致矽片7產生定位誤差，最終影響設備曝光性能。In view of the above-mentioned defects, a series of temperature-controlled liquid flow path cavities are arranged inside the workpiece table 8. The temperature-controlled liquid flow path cavity is used to control the temperature of the workpiece table 8 and compensate for the evaporation of the liquid film on the surface of the silicon wafer 7. The adverse effects of cold. However, during the exposure process, the workpiece table 8 will continue to accelerate and decelerate in different directions in the horizontal plane. The movement direction is 81, which will cause the liquid in the workpiece table 8 to slide relative to the workpiece table 8, that is, the liquid in the workpiece table 8 is relatively The flow rate of the workpiece table 8 fluctuates, which will cause fluctuations in the compensation of the evaporation and cooling effect of the liquid film on the surface of the silicon wafer 7. The analysis shows that the local temperature change of the silicon wafer 7 caused by the flow velocity fluctuation is about 0.001℃, which will cause the silicon wafer 7 Generate positioning errors, which will ultimately affect the exposure performance of the equipment.

本發明的目的是，提供一種晶片承載系統和沉浸式光刻設備，以解決曝光過程中工件台的加減速運動對浸液滑移而導致工作台內液體的溫度波動的缺陷。The purpose of the present invention is to provide a wafer carrying system and an immersion lithography equipment to solve the defect that the acceleration and deceleration movement of the workpiece table causes the immersion liquid to slip during the exposure process, which causes the temperature fluctuation of the liquid in the working table.

為了解決上述技術問題，本發明提供一種晶片承載系統，包括工件台，所述工件台的內部設置有若干條液體流路腔體，每條所述液體流路腔體以關於所述工件台的水平面中心點呈中心對稱的形式分布，相鄰兩條所述液體流路腔體內流通有相反流向的溫控液體。In order to solve the above-mentioned technical problems, the present invention provides a wafer carrying system, including a workpiece table, a plurality of liquid flow path cavities are arranged inside the workpiece table, and each of the liquid flow path cavities is related to the workpiece table. The center points of the horizontal plane are distributed in a symmetrical form, and two adjacent liquid flow path cavities are circulated with temperature-controlled liquids in opposite flow directions.

進一步的，本發明提供的晶片承載系統，垂向俯視時，每條所述液體流路腔體的形狀為圓環形。Further, in the wafer carrier system provided by the present invention, when viewed from a vertical top view, the shape of each liquid flow path cavity is circular.

進一步的，本發明提供的晶片承載系統，所述若干條液體流路腔體的垂向截面相同。Further, in the wafer carrying system provided by the present invention, the vertical cross-sections of the plurality of liquid flow path cavities are the same.

進一步的，本發明提供的晶片承載系統，相鄰兩條所述液體流路腔體的中心點之間的距離小於每條所述液體流路腔體在水平面方向上的寬度的四倍。Further, in the wafer carrier system provided by the present invention, the distance between the center points of two adjacent liquid flow path cavities is less than four times the width of each liquid flow path cavity in the horizontal direction.

進一步的，本發明提供的晶片承載系統，每條所述液體流路腔體的垂向截面的形狀為矩形。Further, in the wafer carrier system provided by the present invention, the shape of the vertical cross-section of each liquid flow path cavity is a rectangle.

進一步的，本發明提供的晶片承載系統，所述晶片承載系統還包括若干個強化傳熱結構，每條所述液體流路腔體的內側表面設置有至少一個所述強化傳熱結構。Further, in the wafer carrying system provided by the present invention, the wafer carrying system further includes a plurality of enhanced heat transfer structures, and at least one of the enhanced heat transfer structures is provided on the inner surface of each liquid flow path cavity.

進一步的，本發明提供的晶片承載系統，每個所述強化傳熱結構為肋片或者凸點。Further, in the wafer carrying system provided by the present invention, each of the enhanced heat transfer structures is a fin or a bump.

進一步的，本發明提供的晶片承載系統，每條所述液體流路腔體均具有用於提供溫控液體的供應流路和回收溫控液體的回收流路，且各所述液體流路腔體的供應流路相互獨立，各所述液體流路腔體的回收流路相互獨立。Further, in the wafer carrier system provided by the present invention, each of the liquid flow path cavities has a supply flow path for providing a temperature-controlled liquid and a recovery flow path for recovering the temperature-controlled liquid, and each of the liquid flow path cavities The supply flow paths of the bodies are independent of each other, and the recovery flow paths of the liquid flow path cavities are independent of each other.

進一步的，本發明提供的晶片承載系統，所述晶片承載系統還包括若干個分支流量調節裝置，在每個所述液體流路腔體的供應流路上均設置有至少一個所述分支流量調節裝置，所述分支流量調節裝置用於調節供應至各所述液體流路腔體的溫控液體的流量。Further, in the wafer carrying system provided by the present invention, the wafer carrying system further includes a plurality of branch flow adjustment devices, and at least one branch flow adjustment device is provided on the supply flow path of each liquid flow path cavity The branch flow rate adjusting device is used to adjust the flow rate of the temperature-controlled liquid supplied to each of the liquid flow path cavities.

進一步的，本發明提供的晶片承載系統，所述晶片承載系統還包括分流器，各所述液體流路腔體的供應流路中的溫控液體均是通過所述分流器從外部溫控液體供應源中分流而來。Further, in the wafer carrier system provided by the present invention, the wafer carrier system further includes a flow divider, and the temperature-controlled liquid in the supply flow path of each liquid flow path cavity is temperature-controlled from the outside through the flow divider. Diverted from the source of supply.

進一步的，本發明提供的晶片承載系統，所述晶片承載系統還包括主流量調節裝置，所述分流器與所述外部溫控液體供應源之間設置有所述主流量調節裝置。Further, in the wafer carrier system provided by the present invention, the wafer carrier system further includes a main flow adjustment device, and the main flow adjustment device is arranged between the flow divider and the external temperature-controlled liquid supply source.

為了解決上述技術問題，本發明還提供一種沉浸式光刻設備，包括主框架、照明系統、投影物鏡、浸沒頭以及如上述的晶片承載系統，所述照明系統、所述投影物鏡和所述晶片承載系統設置於所述主框架上，所述浸沒頭設置於所述投影物鏡和所述晶片承載系統之間。In order to solve the above technical problems, the present invention also provides an immersive lithography apparatus, including a main frame, an illumination system, a projection objective lens, an immersion head, and the above-mentioned wafer carrier system, the illumination system, the projection objective lens, and the wafer The carrying system is arranged on the main frame, and the immersion head is arranged between the projection objective lens and the wafer carrying system.

與現有技術相比，本發明提供的晶片承載系統和沉浸式光刻設備，通過工件台的內部設置有若干條液體流路腔體，每條所述液體流路腔體以關於所述工件台的水平面中心點呈中心對稱的形式分布，相鄰兩條所述液體流路腔體內流通有相反流向的溫控液體來控制工件台的溫度，以補償晶片表面液膜蒸發致冷產生的溫度損失。通過在相鄰兩條所述液體流路腔體內流通有相反流向的溫控液體，在曝光過程中工件台的加減速運動時，工件台的液體相對於工作台滑移時，由於若干條液體流路腔體內存在相反流通方向的溫控液體，因此，液體滑移的方向總是與液體流路腔體內的其中一個流通方向相同，與液體滑移方向相同的液體流路腔體內的溫控液體的流動方向，抵消了工件台在水平面內不同方向進行加減速運動導致的液體滑移產生的補償溫度的波動。從而克服了晶片的定位誤差，提高了光刻設備的曝光性能。Compared with the prior art, the wafer carrier system and immersion lithography equipment provided by the present invention are provided with a number of liquid flow path cavities through the inside of the workpiece table, and each of the liquid flow path cavities is relative to the workpiece table. The center points of the horizontal plane are distributed in a symmetrical form, and two adjacent liquid flow path cavities flow in oppositely flowing temperature-controlled liquids to control the temperature of the workpiece table to compensate for the temperature loss caused by the evaporation and cooling of the liquid film on the surface of the wafer . By circulating temperature-controlled liquids in opposite flow directions in the two adjacent liquid flow path cavities, during the acceleration and deceleration movement of the workpiece table during the exposure process, when the liquid of the workpiece table slides relative to the work table, due to a number of liquid There is a temperature-controlled liquid in the opposite flow direction in the flow path cavity. Therefore, the direction of liquid slippage is always the same as one of the flow directions in the liquid flow path cavity, and the temperature control in the liquid flow path cavity that is the same as the liquid slip direction The flow direction of the liquid offsets the compensation temperature fluctuation caused by the liquid slip caused by the acceleration and deceleration movement of the workpiece table in different directions in the horizontal plane. Therefore, the positioning error of the wafer is overcome, and the exposure performance of the lithography equipment is improved.

下面結合附圖對本發明作詳細描述：The present invention will be described in detail below in conjunction with the accompanying drawings:

圖4是本發明的工件台的結構示意圖。請參考圖4和圖5，本發明實施例提供一種晶片承載系統，包括工件台81，所述工件台81的內部設置有均勻分布的若干條相互獨立的液體流路腔體，即每條液體流路腔體設置有單獨的入口IN和出口OUT，相鄰兩條所述液體流路腔體內流通有方向相反的溫控液體。在此，每條所述液體流路腔體沿所述工件台81的周向延伸，若干條相互獨立的液體流路腔體沿所述工件台81的徑向均勻分布。其中，圖4中示出了6條液體流路腔體，但不限於6條，可以根據實際需要增加或者減少，包括多條奇數液體流路腔體8101、8103、8105和多條偶數液體流路腔體8102、8204、8106，奇數液體流路腔體內流通有第一方向的溫控液體；偶數液體流路腔體內流通有第二方向的溫控液體，所述第一方向與所述第二方向相反。即本發明實施例的奇數液體流路腔體8101、8103和8105內的液體流動方向為逆時針，偶數液體流路腔體8202、8104和8106內的液體流動方向為順時針，如相應液體流路腔體內的箭頭方向所示。Fig. 4 is a schematic diagram of the structure of the workpiece table of the present invention. 4 and 5, the embodiment of the present invention provides a wafer carrying system, including a workpiece table 81, inside the workpiece table 81 is provided with a number of evenly distributed liquid flow path cavities independent of each other, that is, each liquid The flow path cavity is provided with a separate inlet IN and an outlet OUT, and two adjacent liquid flow path cavities are circulated with temperature-controlled liquids in opposite directions. Here, each of the liquid flow path cavities extends along the circumferential direction of the workpiece table 81, and a number of mutually independent liquid flow path cavities are evenly distributed along the radial direction of the workpiece table 81. Among them, 6 liquid flow path cavities are shown in FIG. 4, but not limited to 6, which can be increased or decreased according to actual needs, including multiple odd-numbered liquid flow path cavities 8101, 8103, 8105 and multiple even-numbered liquid flows In the cavities 8102, 8204, and 8106, the odd-numbered liquid flow path cavities are filled with a temperature-controlled liquid in a first direction; the even-numbered liquid flow path cavities are filled with a temperature-controlled liquid in a second direction, and the first direction is in line with the first direction. The two directions are opposite. That is, the liquid flow direction in the odd-numbered liquid flow path cavities 8101, 8103, and 8105 in the embodiment of the present invention is counterclockwise, and the liquid flow direction in the even-numbered liquid flow path cavities 8202, 8104, and 8106 is clockwise, such as the corresponding liquid flow. The direction of the arrow in the road cavity is shown.

本發明實施例通過在工件台81的內部設置的若干條液體流路腔體內流通的溫控液體來控制工件台81的溫度，以補償沉浸式光刻設備中晶片表面受到浸液的液膜蒸發致冷產生的溫度損失，即補償熱量損失。通過在相鄰兩條液體流路腔體內流通有方向相反的溫控液體，在曝光過程中工件台81的加減速運動時，工件台81的液體流路腔體內的液體相對於工作台81滑移時，由於若干條液體流路腔體內存在相反流通方向的溫控液體，因此，液體滑移的方向總是與液體流路腔體內的液體其中一個流通方向相同，與液體滑移方向相同的液體流路腔體內的溫控液體，抵消了工件台81在水平面內不同方向進行加減速運動時的液體滑移而導致的補償溫度的波動。即當液體向逆時針方向滑移時，產生滑移的液體的流動方向與奇數液體流路腔體內的溫控液體的流動方向相同，當液體向順時針方向滑移時，產生滑移的液體的流動方向與偶數液體流路腔體內的溫控液體的流動方向相同，從而抵消了工件台81在水平面內不同方向進行加減速運動時的液體滑移產生的溫度波動。因此本發明實施例克服了晶片的定位誤差，提高了光刻設備的曝光性能。In the embodiment of the present invention, the temperature of the workpiece table 81 is controlled by the temperature-controlled liquid circulating in the cavities of several liquid flow paths arranged inside the workpiece table 81 to compensate for the evaporation of the liquid film on the wafer surface by the immersion liquid in the immersion lithography equipment. The temperature loss caused by refrigeration compensates for the heat loss. By circulating the temperature-controlled liquid in opposite directions in the two adjacent liquid flow path cavities, during the acceleration and deceleration movement of the work table 81 during the exposure process, the liquid in the liquid flow path cavity of the work table 81 slides relative to the work table 81. When moving, because there are temperature-controlled liquids with opposite flow directions in several liquid flow path cavities, the direction of liquid slip is always the same as one of the flow directions of the liquid in the liquid flow path cavity, which is the same as the liquid slip direction. The temperature control liquid in the liquid flow path cavity offsets the compensation temperature fluctuation caused by the liquid slip when the workpiece table 81 performs acceleration and deceleration movements in different directions in the horizontal plane. That is, when the liquid slips in the counterclockwise direction, the flow direction of the slipped liquid is the same as the flow direction of the temperature-controlled liquid in the odd-numbered liquid flow path cavity. When the liquid slips in the clockwise direction, the slipped liquid is produced. The flow direction of is the same as the flow direction of the temperature control liquid in the even-numbered liquid flow path cavity, thereby offsetting the temperature fluctuations caused by the liquid slip when the workpiece table 81 accelerates and decelerates in different directions in the horizontal plane. Therefore, the embodiment of the present invention overcomes the positioning error of the wafer and improves the exposure performance of the lithography equipment.

請參考圖4，為了使晶片獲得更好的溫度均勻性和穩定性，每條液體流路腔體以關於所述工件台81的水平面中心點為中心對稱的形式分布。Please refer to FIG. 4, in order to obtain better temperature uniformity and stability of the wafer, each liquid flow path cavity is distributed in a symmetrical form with respect to the center point of the horizontal plane of the workpiece table 81.

請參考圖4，為了提高製造精度和獲得更好的溫度均勻性和穩定性，本發明實施例的液體流路腔體在垂向俯視時的形狀為圓環形。若干條圓環形形狀的液體流路腔體在工作台81的水平面中心點向外呈同心圓分布，以工作台81的水平面中心點向外的液體流路腔體依次包括液體流路腔體8106、液體流路腔體8105、液體流路腔體8104、液體流路腔體8103、液體流路腔體8102和液體流路腔體8101。即液體流路腔體在工作台81的水平面中心點向外的圓環形尺寸依次增大。作為替換方案，本發明實施例的液體流路腔體在垂向俯視時的形狀也可以為正六邊形、正八邊形等正多邊形的形狀。Please refer to FIG. 4, in order to improve the manufacturing accuracy and obtain better temperature uniformity and stability, the shape of the liquid flow path cavity in the embodiment of the present invention is a circular ring when viewed in a vertical plan view. A plurality of annular liquid flow path cavities are distributed in concentric circles outward from the center point of the horizontal plane of the workbench 81, and the liquid flow path cavities outward from the horizontal center point of the workbench 81 include liquid flow path cavities in turn. 8106, liquid flow path cavity 8105, liquid flow path cavity 8104, liquid flow path cavity 8103, liquid flow path cavity 8102, and liquid flow path cavity 8101. That is, the size of the circular ring of the liquid flow path cavity outward from the center point of the horizontal plane of the worktable 81 increases in order. As an alternative, the shape of the liquid flow path cavity in the embodiment of the present invention in a vertical plan view may also be a regular polygonal shape such as a regular hexagon and a regular octagon.

圖5是圖4中A-A線或B-B線的剖面放大圖。請參考圖5，為了進一步使晶片獲得更好的溫度均勻性，每條液體流路腔體的垂向截面相同，也即每條液體流路腔體（供液體流通的通道部分）的高度和寬度相同，在此，每條液體流路腔體的垂向截面均為矩形。即6條液體流路腔體的入口IN的垂直截面和出口OUT的截面相同。包括液體流路腔體8101的出口截面8101a和入口截面8101b，液體流路腔體8102的出口截面8102a和入口截面8102b，液體流路腔體8103的出口截面8103a和入口截面8103b，液體流路腔體8104的出口截面8104a和入口截面8104b，液體流路腔體8105的出口截面8105a和入口截面8105b，液體流路腔體8106的出口截面8106a和入口截面8106b。出口截面和入口截面的截面形狀和截面面積完全相同，本發明實施例的液體流路腔體的垂向截面為矩形，其具有結構簡單和製造方便的優點。其中矩形包括長方形和正方形。當然在製造工藝允許的情況之下，液體流路腔體的垂向截面的形狀也可以為圓形或者正多邊形。Fig. 5 is an enlarged cross-sectional view of the line A-A or B-B in Fig. 4. Please refer to Figure 5, in order to further achieve better temperature uniformity of the wafer, the vertical cross section of each liquid flow path cavity is the same, that is, the height of each liquid flow path cavity (the part of the channel for liquid circulation) and The width is the same. Here, the vertical cross section of each liquid flow path cavity is rectangular. That is, the vertical cross section of the inlet IN and the cross section of the outlet OUT of the six liquid flow path cavities are the same. Including the outlet section 8101a and the inlet section 8101b of the liquid flow path cavity 8101, the outlet section 8102a and the inlet section 8102b of the liquid flow path cavity 8102, the outlet section 8103a and the inlet section 8103b of the liquid flow path cavity 8103, the liquid flow path cavity The outlet section 8104a and the inlet section 8104b of the body 8104, the outlet section 8105a and the inlet section 8105b of the liquid flow path cavity 8105, the outlet section 8106a and the inlet section 8106b of the liquid flow path cavity 8106. The cross-sectional shape and cross-sectional area of the outlet cross-section and the inlet cross-section are completely the same. The vertical cross-section of the liquid flow path cavity of the embodiment of the present invention is rectangular, which has the advantages of simple structure and convenient manufacturing. The rectangles include rectangles and squares. Of course, if the manufacturing process permits, the shape of the vertical cross-section of the liquid flow path cavity may also be a circle or a regular polygon.

請參考圖5，為了使工作台的水平面的溫度更加均勻，以使晶片獲得更好的溫度均勻性，本發明實施例的液體流路腔體的垂向截面形狀為矩形時，相鄰兩條液體流路腔體（供液體流通的通道部分）的中心點之間在水平面方向上的距離L小於四倍的所述液體流路腔體在水平面方向上的寬度B，即L≤4B。當L>4B時，流動的液體流路腔體內的溫控液體在工作台81加減速運動時，由於慣性的作用，液體流路腔體內的溫控液體在改變方向時，產生的溫控液體的流動間隙變大，從而加減速的瞬間出現較大的溫度波動，從而對晶片的溫度均勻性產生不利影響。Please refer to FIG. 5, in order to make the temperature of the horizontal plane of the worktable more uniform, so as to obtain better temperature uniformity of the wafer, when the vertical cross-sectional shape of the liquid flow path cavity of the embodiment of the present invention is rectangular, two adjacent ones The distance L in the horizontal direction between the center points of the liquid flow path cavity (the portion of the passage through which the liquid flows) is less than four times the width B of the liquid flow path cavity in the horizontal direction, that is, L≦4B. When L>4B, when the temperature-controlled liquid in the fluid flow path cavity accelerates and decelerates on the worktable 81, due to the effect of inertia, the temperature-controlled liquid in the liquid flow path cavity changes its direction. The flow gap becomes larger, so that there is a large temperature fluctuation at the moment of acceleration and deceleration, which adversely affects the temperature uniformity of the wafer.

圖6是液體流路腔體內強化傳熱結構的示意圖，圖9是液體流路腔體內另一強化傳熱結構的示意圖。請參考圖6和圖9，本發明實施例的晶片承載系統，每條液體流路腔體的內側表面設置有若干個強化傳熱結構，其中強化傳熱結構可以為離散結構，也可以為連續結構。為了更加清楚的描述強化傳熱結構的方案，以下使用與上述6條液體流路腔體8101至8106不同的第7條液體流路腔體8107進行描述，實際上每條流體流路腔體內均可設置強化傳熱結構，第7條液體流路腔體8107僅為本發明實施例的示例，並不作為本發明的限制。請參考圖6，本發明實施例的強化傳熱結構為離散結構，包括在液體流路腔體8107的左內側表面8108和右內側表面8109間隔設置均勻分布的肋片8112，肋片8112為矩形形狀，而在液體流路腔體8107的上表面8110和下表面8111不設置肋片。請參考圖9，本發明實施例的強化傳熱結構為離散結構，其為均勻間隔分布的凸點8122，僅在液體流路腔體8107的左內側表面8108和右內側表面8109設置，而在液體流路腔體8107的上表面8110和下表面8111不設置凸點。凸點8122具有弧形表面，其產生阻力小，便於腔體8107內的液體流動通過。6 is a schematic diagram of an enhanced heat transfer structure in the liquid flow path cavity, and FIG. 9 is a schematic view of another enhanced heat transfer structure in the liquid flow path cavity. Please refer to Figures 6 and 9, in the wafer carrier system of the embodiment of the present invention, a number of enhanced heat transfer structures are provided on the inner surface of each liquid flow path cavity, wherein the enhanced heat transfer structure can be a discrete structure or a continuous structure. structure. In order to describe the solution of the enhanced heat transfer structure more clearly, the seventh liquid flow path cavity 8107 which is different from the above 6 liquid flow path cavities 8101 to 8106 is used for description. In fact, each fluid flow path cavity is An enhanced heat transfer structure can be provided, and the seventh liquid flow path cavity 8107 is only an example of the embodiment of the present invention, and is not a limitation of the present invention. Please refer to FIG. 6, the enhanced heat transfer structure of the embodiment of the present invention is a discrete structure, including evenly distributed fins 8112 arranged at intervals on the left inner surface 8108 and the right inner surface 8109 of the liquid flow path cavity 8107. The fins 8112 are rectangular. The upper surface 8110 and the lower surface 8111 of the liquid flow path cavity 8107 are not provided with fins. Please refer to FIG. 9, the enhanced heat transfer structure of the embodiment of the present invention is a discrete structure, which is uniformly spaced convex points 8122, which are only provided on the left inner surface 8108 and the right inner surface 8109 of the liquid flow path cavity 8107. The upper surface 8110 and the lower surface 8111 of the liquid flow path cavity 8107 are not provided with bumps. The convex point 8122 has an arc-shaped surface, which generates a small resistance and is convenient for the liquid in the cavity 8107 to flow through.

具有強化傳熱結構的液體流路腔體（以下為腔體表示）能夠增加溫控液體與腔體的接觸表面積，從而將腔體內液體的溫度通過側表面的強化傳熱結構均勻的快速地傳遞給工作台81，其工作台的上表面快速的形成均勻穩定的溫度。該強化傳熱結構的實質為熱能交換，是將流通的液體的溫度通過強化傳熱結構與工作台的溫度進行快速交換，以使工作台81的溫度更加穩定和均勻。該強化傳熱結構僅在腔體的側表面設置，而在腔體的上表面和下表面不設置，避免上表面設置時，與工作台81的上表面的溫度形成反差的忽冷或者忽熱的液體流動，對工作台81的上表面造成不利的溫差現象，損壞晶片的情況。另外，強化傳熱結構能夠實現傳熱係數各向異性，水平向和垂直向傳熱係數不同，強化傳熱結構在同心圓分布的液體流路腔體的左內側表面和右內側表面設置，則液體流路腔體在水平向傳熱係數更大有利於水平面內溫度分布均化。The liquid flow path cavity with an enhanced heat transfer structure (hereinafter referred to as the cavity) can increase the contact surface area of the temperature-controlled liquid with the cavity, so that the temperature of the liquid in the cavity can be uniformly and quickly transferred through the enhanced heat transfer structure on the side surface For the workbench 81, the upper surface of the workbench quickly forms a uniform and stable temperature. The essence of the enhanced heat transfer structure is heat energy exchange, which rapidly exchanges the temperature of the circulating liquid with the temperature of the workbench through the enhanced heat transfer structure, so that the temperature of the workbench 81 is more stable and uniform. The enhanced heat transfer structure is only provided on the side surface of the cavity, but not on the upper and lower surfaces of the cavity, so as to avoid sudden cold or sudden heat that is in contrast to the temperature of the upper surface of the worktable 81 when the upper surface is installed The flow of the liquid causes an unfavorable temperature difference phenomenon on the upper surface of the table 81 and damages the wafer. In addition, the enhanced heat transfer structure can achieve anisotropy of heat transfer coefficient, and the horizontal and vertical heat transfer coefficients are different. The enhanced heat transfer structure is arranged on the left inner surface and the right inner surface of the liquid flow path cavity distributed in concentric circles, then The larger heat transfer coefficient of the liquid flow path cavity in the horizontal direction is beneficial to the homogenization of the temperature distribution in the horizontal plane.

本發明實施例還提供一種沉浸式光刻設備，包括主框架、照明系統、投影物鏡、浸沒頭以及如上述的晶片承載系統。The embodiment of the present invention also provides an immersive lithography apparatus, which includes a main frame, an illumination system, a projection objective lens, an immersion head, and the above-mentioned wafer carrying system.

圖7至圖8是液體流路腔體的液體控制系統的結構示意圖。請參考圖7和圖8，本發明實施例提供的液體流路腔體，包括每條所述液體流路腔體均具有用於提供溫控液體的供應流路81131和回收溫控液體的回收流路81132，且不同液體流路腔體的供應流路81131相互獨立，不同液體流路腔體的回收流路81132相互獨立。在每個液體流路腔體的供應流路上均設置有分支流量調節裝置81133，用於調節供應至各液體流路腔體的溫控液體的流量。各液體流路腔體的供應流路81131中的溫控液體均是通過一分流器從外部溫控液體供應源中分流而來。所述分流器與外部溫控液體供應源之間設置有主流量調節裝置81103。7 to 8 are schematic diagrams of the structure of the liquid control system of the liquid flow path cavity. Please refer to FIGS. 7 and 8, the liquid flow path cavity provided by the embodiment of the present invention includes each of the liquid flow path cavities having a supply flow path 81131 for providing temperature control liquid and recovery of the temperature control liquid. The flow paths 81132, the supply flow paths 81131 of different liquid flow path cavities are independent of each other, and the recovery flow paths 81132 of different liquid flow path cavities are independent of each other. A branch flow adjusting device 81133 is provided on the supply flow path of each liquid flow path cavity for adjusting the flow rate of the temperature control liquid supplied to each liquid flow path cavity. The temperature control liquid in the supply flow path 81131 of each liquid flow path cavity is branched from an external temperature control liquid supply source through a flow divider. A main flow regulating device 81103 is provided between the flow divider and the external temperature control liquid supply source.

其中，圖7為每條液體流路腔體的液體控制系統的單獨控制方案。圖8為若干條液體流路腔體的液體控制系統的總體控制方案與單獨控制方案的結合的混合控制方案。Among them, Fig. 7 is a separate control scheme of the liquid control system of each liquid flow path cavity. Fig. 8 is a mixed control scheme combining the overall control scheme and the individual control scheme of the liquid control system of several liquid flow path cavities.

本發明實施例以三條液體流路腔體進行描述說明混合控制方案，但不限於三條。三條液體流路腔體分別用區別於上述實施例的附圖標記8114、8115和8116來表示。包括：The embodiment of the present invention uses three liquid flow path cavities to describe the mixing control scheme, but it is not limited to three. The three liquid flow path cavities are respectively denoted by reference numerals 8114, 8115, and 8116 that are different from the foregoing embodiment. include:

與液體流路腔體8114相通的液體供應流路81141和液體回收流路81142，用於該液體供應流路81141上的分支流量調節裝置81143；The liquid supply flow path 81141 and the liquid recovery flow path 81142 communicating with the liquid flow path cavity 8114 are used for the branch flow adjustment device 81143 on the liquid supply flow path 81141;

與液體流路腔體8115相通的液體供應流路81151和液體回收流路81152，用於該液體供應流路81151上的分支流量調節裝置81153；The liquid supply flow path 81151 and the liquid recovery flow path 81152 communicating with the liquid flow path cavity 8115 are used for the branch flow adjustment device 81153 on the liquid supply flow path 81151;

與液體流路腔體8116相通的液體供應流路81161和液體回收流路81162，用於該液體供應流路81161上的分支流量調節裝置81163；The liquid supply flow path 81161 and the liquid recovery flow path 81162 communicating with the liquid flow path cavity 8116 are used for the branch flow adjustment device 81163 on the liquid supply flow path 81161;

所有條液體供應流路通過分流器連通到液體總供應流路81101，所有所述液體回收流路通過回流器連通到液體總回收流路81102，所述液體總供應流路81101設置有主流量調節裝置81103。其中分流器和回流器為安裝方向不同的同一結構，例如分流器和回流器均可以為三通等多通管道。All the liquid supply flow paths are connected to the total liquid supply flow path 81101 through the flow divider, all the liquid recovery flow paths are connected to the total liquid recovery flow path 81102 through the reflux, and the total liquid supply flow path 81101 is provided with a main flow adjustment装置81103. The flow divider and the reflux device are of the same structure with different installation directions. For example, the flow divider and the reflux device can be multi-pass pipes such as three-way.

當然還可以在各液體供應流路和/或液體總供應流路設置溫度調節器和/或流速調節器。溫度調節器用於調節溫控液體的溫度。流速調節器可以採用壓力調節，通過不同的壓力設置，提供不同的液體流速。Of course, temperature regulators and/or flow rate regulators can also be provided in each liquid supply flow path and/or the total liquid supply flow path. The temperature regulator is used to adjust the temperature of the temperature control liquid. The flow rate regulator can be adjusted by pressure to provide different liquid flow rates through different pressure settings.

本發明實施例的若干條液體流路腔體的液體控制系統中的總體控制方案是將混合控制方案中的液體流路腔體上的分支流量調節裝置全部去掉，只保留液體總供應流路81101上的主流量調節裝置81103。The overall control scheme in the liquid control system of the several liquid flow path cavities in the embodiment of the present invention is to remove all the branch flow adjustment devices on the liquid flow path cavities in the mixing control scheme, leaving only the total liquid supply flow path 81101 On the main flow adjustment device 81103.

本發明不限於上述具體實施方式，凡對於本發明之申請專利範圍所界定的保護範圍、以及對它進行變更、修飾、調整、替換、組合等而得到的各種變化和潤飾，均在本發明的權利保護範圍之內。The present invention is not limited to the above-mentioned specific embodiments. All the protection scope defined by the scope of patent application of the present invention, as well as the various changes and modifications obtained from changes, modifications, adjustments, substitutions, combinations, etc., are all in the present invention. Within the scope of protection of rights.

1‧‧‧主框架 2‧‧‧照明系統 3‧‧‧掩模版 4‧‧‧投影物鏡 5‧‧‧浸液流場 6‧‧‧浸沒頭（浸液限制機構） 7‧‧‧矽片 8‧‧‧工件台 11‧‧‧供液設備 12‧‧‧管路 13‧‧‧供氣設備 14‧‧‧管路 15‧‧‧氣液回收設備 16‧‧‧管路 51‧‧‧液膜 81‧‧‧工件台 8101‧‧‧液體流路腔體 8102‧‧‧液體流路腔體 8103‧‧‧液體流路腔體 8104‧‧‧液體流路腔體 8105‧‧‧液體流路腔體 8106‧‧‧液體流路腔體 8101a‧‧‧出口截面 8102a‧‧‧出口截面 8103a‧‧‧出口截面 8104a‧‧‧出口截面 8105a‧‧‧出口截面 8106a‧‧‧出口截面 8101b‧‧‧入口截面 8102b‧‧‧入口截面 8103b‧‧‧入口截面 8104b‧‧‧入口截面 8105b‧‧‧入口截面 8106b‧‧‧入口截面 8107‧‧‧液體流路腔體 8108‧‧‧左內側表面 8109‧‧‧右內側表面 8110‧‧‧上表面 81101‧‧‧液體總供應流路 81102‧‧‧液體總回收流路 81103‧‧‧主流量調節裝置 8111‧‧‧下表面 8112‧‧‧肋片 81131‧‧‧供應流路 81132‧‧‧回收流路 81133‧‧‧分支流量調節裝置 8114‧‧‧液體流路腔體 81141‧‧‧液體供應流路 81142‧‧‧液體回收流路 81143‧‧‧分支流量調節裝置 8115‧‧‧液體流路腔體 81151‧‧‧液體供應流路 81152‧‧‧液體回收流路 81153‧‧‧分支流量調節裝置 8116‧‧‧液體流路腔體 81161‧‧‧液體供應流路 81162‧‧‧液體回收流路 81163‧‧‧分支流量調節裝置 1‧‧‧Main frame 2‧‧‧Lighting system 3‧‧‧Mask 4‧‧‧Projection objective 5‧‧‧Immersed liquid flow field 6‧‧‧Immersion head (immersion restriction mechanism) 7‧‧‧Silicon wafer 8‧‧‧Workpiece table 11‧‧‧Liquid supply equipment 12‧‧‧Pipe 13‧‧‧Gas supply equipment 14‧‧‧Pipe 15‧‧‧Gas-liquid recovery equipment 16‧‧‧Pipe 51‧‧‧Liquid film 81‧‧‧Workpiece table 8101‧‧‧Liquid flow path cavity 8102‧‧‧Liquid flow path cavity 8103‧‧‧Liquid flow path cavity 8104‧‧‧Liquid flow path cavity 8105‧‧‧Liquid flow path cavity 8106‧‧‧Liquid flow path cavity 8101a‧‧‧Exit section 8102a‧‧‧Exit section 8103a‧‧‧Exit section 8104a‧‧‧Exit section 8105a‧‧‧Exit section 8106a‧‧‧Exit section 8101b‧‧‧Entrance section 8102b‧‧‧Entrance section 8103b‧‧‧Entrance section 8104b‧‧‧Entrance section 8105b‧‧‧Entrance section 8106b‧‧‧Entrance section 8107‧‧‧Liquid flow path cavity 8108‧‧‧Left medial surface 8109‧‧‧Right inner surface 8110‧‧‧Upper surface 81101‧‧‧Liquid total supply flow path 81102‧‧‧Liquid total recovery flow path 81103‧‧‧Main flow regulating device 8111‧‧‧Lower surface 8112‧‧‧ Rib 81131‧‧‧Supply flow path 81132‧‧‧Recycling flow path 81133‧‧‧Branch flow regulator 8114‧‧‧Liquid flow path cavity 81141‧‧‧Liquid supply flow path 81142‧‧‧Liquid recovery flow path 81143‧‧‧Branch flow regulator 8115‧‧‧Liquid flow path cavity 81151‧‧‧Liquid supply flow path 81152‧‧‧Liquid recovery flow path 81153‧‧‧Branch flow regulator 8116‧‧‧Liquid flow path cavity 81161‧‧‧Liquid supply flow path 81162‧‧‧Liquid recovery flow path 81163‧‧‧Branch flow regulator

圖1是現有的沉浸式光刻機的結構示意圖； 圖2是現有的沉浸式光刻機的浸液控制系統的結構示意圖； 圖3是現有的曝光過程中浸液相對於工件台的變化關係示意圖； 圖4是本發明的工件台的結構示意圖； 圖5是圖4中A-A線或B-B線的剖面放大圖； 圖6是液體流路腔體內強化傳熱結構的示意圖； 圖7至圖8是液體流路腔體的液體控制系統的結構示意圖； 圖9是液體流路腔體內另一強化傳熱結構的示意圖。FIG. 1 is a schematic diagram of the structure of an existing immersion lithography machine; Fig. 2 is a schematic structural diagram of an immersion liquid control system of an existing immersion lithography machine; FIG. 3 is a schematic diagram of the relationship between the immersion liquid phase and the workpiece stage during the existing exposure process; Figure 4 is a schematic diagram of the structure of the workpiece table of the present invention; Figure 5 is an enlarged cross-sectional view of line A-A or line B-B in Figure 4; Fig. 6 is a schematic diagram of the enhanced heat transfer structure in the liquid flow path cavity; 7 to 8 are structural schematic diagrams of the liquid control system of the liquid flow path cavity; Fig. 9 is a schematic diagram of another enhanced heat transfer structure in the liquid flow path cavity.

81‧‧‧工件台 81‧‧‧Workpiece table

8101‧‧‧液體流路腔體 8101‧‧‧Liquid flow path cavity

8102‧‧‧液體流路腔體 8102‧‧‧Liquid flow path cavity

8103‧‧‧液體流路腔體 8103‧‧‧Liquid flow path cavity

8104‧‧‧液體流路腔體 8104‧‧‧Liquid flow path cavity

8105‧‧‧液體流路腔體 8105‧‧‧Liquid flow path cavity

8106‧‧‧液體流路腔體 8106‧‧‧Liquid flow path cavity

Claims (11)

一種晶片承載系統，其特徵在於包括工件台，所述工件台的內部設置有若干條液體流路腔體，每條所述液體流路腔體以關於所述工件台的水平面中心點呈中心對稱的形式分布，相鄰兩條所述液體流路腔體內流通有方向相反的溫控液體；其中每條所述液體流路腔體均具有用於提供溫控液體的供應流路和回收溫控液體的回收流路，且各所述液體流路腔體的供應流路相互獨立，各所述液體流路腔體的回收流路相互獨立。 A wafer carrying system, which is characterized by comprising a workpiece table, a plurality of liquid flow path cavities are arranged inside the workpiece table, and each of the liquid flow path cavities is symmetric about the center point of the horizontal plane of the workpiece table The two adjacent liquid flow path cavities have temperature-controlled liquids flowing in opposite directions; wherein each of the liquid flow path cavities has a supply flow path for providing a temperature-controlled liquid and a recovery temperature control The liquid recovery flow path, and the supply flow paths of the liquid flow path cavities are independent of each other, and the recovery flow paths of the liquid flow path cavities are independent of each other. 如請求項1所述的晶片承載系統，其中在垂向俯視時，每條所述液體流路腔體的形狀為圓環形。 The wafer carrier system according to claim 1, wherein when viewed in a vertical plan view, each of the liquid flow path cavities has a circular ring shape. 如請求項1所述的晶片承載系統，其中所述若干條液體流路腔體的垂向截面相同。 The wafer carrier system according to claim 1, wherein the vertical cross-sections of the plurality of liquid flow path cavities are the same. 如請求項3所述的晶片承載系統，其中相鄰兩條所述液體流路腔體的各自中心點之間的距離小於每條所述液體流路腔體在水平面方向上的寬度的四倍。 The wafer carrier system according to claim 3, wherein the distance between the respective center points of the two adjacent liquid flow path cavities is less than four times the width of each of the liquid flow path cavities in the horizontal direction . 如請求項3所述的晶片承載系統，其中每條所述液體流路腔體的垂向截面的形狀為矩形。 The wafer carrier system according to claim 3, wherein the shape of the vertical cross-section of each of the liquid flow path cavities is a rectangle. 如請求項1所述的晶片承載系統，其中所述晶片承載系統還包括若干個強化傳熱結構，每條所述液體流路腔體的內側表面設置有至少一個所述強化傳熱結構。 The wafer carrier system according to claim 1, wherein the wafer carrier system further includes a plurality of enhanced heat transfer structures, and at least one of the enhanced heat transfer structures is provided on the inner surface of each liquid flow path cavity. 如請求項6所述的晶片承載系統，其中每個所述強化傳熱結構為肋片或者凸點。 The wafer carrier system according to claim 6, wherein each of the enhanced heat transfer structures is a fin or a bump. 如請求項7所述的晶片承載系統，其中所述晶片承載系統還包括若干個分支流量調節裝置，在每個所述液體流路腔體的供應流路上均 設置有至少一個所述分支流量調節裝置，所述分支流量調節裝置用於調節供應至各所述液體流路腔體的溫控液體的流量。 The wafer carrier system according to claim 7, wherein the wafer carrier system further includes a plurality of branch flow adjustment devices, which are arranged on the supply flow path of each liquid flow path cavity. At least one branch flow adjustment device is provided, and the branch flow adjustment device is used to adjust the flow rate of the temperature-controlled liquid supplied to each of the liquid flow path cavities. 如請求項8所述的晶片承載系統，其中所述晶片承載系統還包括分流器，各所述液體流路腔體的供應流路中的溫控液體均是通過所述分流器從外部溫控液體供應源中分流而來。 The wafer carrier system according to claim 8, wherein the wafer carrier system further includes a flow divider, and the temperature-controlled liquid in the supply flow path of each liquid flow path cavity is temperature-controlled from the outside through the flow divider. Divide from the liquid supply source. 如請求項9所述的晶片承載系統，其中所述晶片承載系統還包括主流量調節裝置，所述分流器與所述外部溫控液體供應源之間設置有所述主流量調節裝置。 The wafer carrier system according to claim 9, wherein the wafer carrier system further includes a main flow adjustment device, and the main flow adjustment device is arranged between the flow divider and the external temperature-controlled liquid supply source. 一種沉浸式光刻設備，其特徵在於包括主框架、照明系統、投影物鏡、浸沒頭、以及如請求項1至10中任一項所述的晶片承載系統，所述照明系統、所述投影物鏡和所述晶片承載系統設置於所述主框架上，所述浸沒頭設置於所述投影物鏡和所述晶片承載系統之間。 An immersion lithography equipment, which is characterized by comprising a main frame, an illumination system, a projection objective lens, an immersion head, and the wafer carrying system according to any one of claims 1 to 10, the illumination system, and the projection objective lens And the wafer carrying system is arranged on the main frame, and the immersion head is arranged between the projection objective lens and the wafer carrying system.
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