TWI729167B - Heating apparatus for substrate, heating method for substrate and infrared heaters - Google Patents

Heating apparatus for substrate, heating method for substrate and infrared heaters Download PDF

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TWI729167B
TWI729167B TW106123574A TW106123574A TWI729167B TW I729167 B TWI729167 B TW I729167B TW 106123574 A TW106123574 A TW 106123574A TW 106123574 A TW106123574 A TW 106123574A TW I729167 B TWI729167 B TW I729167B
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substrate
infrared heater
heating
infrared
cover
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TW201807756A (en
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加藤茂
佐保田勉
山谷謙一
升芳明
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日商東京應化工業股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring

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Abstract

目的在於提高紅外線加熱器的溫度分佈的平衡。   本實施方式的基板加熱裝置,包括:減壓部,對塗布了溶液的基板的容納空間的氛圍進行減壓;及紅外線加熱器,能夠通過紅外線加熱所述基板;所述紅外線加熱器呈在多個部位彎折的管狀,並且包括:彎曲部,以向外側凸出的方式彎折;及蓋部,配置為從外側覆蓋所述彎曲部的至少一部分。The purpose is to improve the balance of the temperature distribution of the infrared heater. The substrate heating device of the present embodiment includes: a pressure reducing part for reducing the pressure of the atmosphere of the accommodation space of the substrate coated with the solution; and an infrared heater capable of heating the substrate by infrared rays; Each part is bent in a tubular shape, and includes: a bent part that is bent so as to protrude outward; and a cover part that is arranged to cover at least a part of the bent part from the outside.

Description

基板加熱裝置、基板加熱方法以及紅外線加熱器Substrate heating device, substrate heating method, and infrared heater

[0001] 本發明關於基板加熱裝置、基板加熱方法以及紅外線加熱器。[0001] The present invention relates to a substrate heating device, a substrate heating method, and an infrared heater.

[0002] 近年來,存在以下的市場需求:代替玻璃基板而使用具有撓性的樹脂基板作為電子元件用的基板。這樣的樹脂基板例如使用聚醯亞胺膜。例如,聚醯亞胺膜是在基板上塗布聚醯亞胺的前驅體的溶液後、經過對所述基板進行加熱的工程(加熱工程)而形成的。作為聚醯亞胺的前驅體的溶液,例如存在由聚醯胺酸與溶劑構成的聚醯胺酸清漆(例如參照專利文獻1以及專利文獻2)。 現有技術文獻   [0003] 專利文獻   專利文獻1:日本特開2001-210632號公報   專利文獻2:國際公開第2009/104371號   專利文獻3:日本特開2006-170524號公報[0002] In recent years, there has been a market demand for using a flexible resin substrate as a substrate for electronic components instead of a glass substrate. Such a resin substrate uses, for example, a polyimide film. For example, the polyimide film is formed by applying a solution of a polyimide precursor on a substrate and then heating the substrate (heating process). As a solution of the precursor of the polyimide, there is, for example, a polyamide varnish composed of a polyamide acid and a solvent (for example, refer to Patent Document 1 and Patent Document 2). Prior Art Literature   [0003] Patent Literature   Patent Literature 1: Japanese Patent Application Publication No. 2001-210632    Patent Literature 2: International Publication No. 2009/104371    Patent Literature 3: Japanese Patent Application Publication No. 2006-170524

發明要解決的技術問題   [0004] 然而,上述的加熱工程包括:使溶劑在較低溫度下蒸發的第一工程與使聚醯胺酸在較高溫度下固化的第二工程。考慮在第二工程中,使用紅外線加熱器,能夠通過紅外線加熱基板。作為紅外線加熱器,例如已知有呈W型或U型的紅外線加熱器(例如參照專利文獻3)。但是,W型或U型的紅外線加熱器,露出以向外側凸出的方式彎折的部分,露出的部分與其他部分相比會降溫,因此在提高紅外線加熱器的溫度分佈的平衡方面存在問題。   [0005] 鑒於以上那樣的情況,本發明的目的在於提供一種基板加熱裝置、基板加熱方法以及紅外線加熱器,能夠提高紅外線加熱器的溫度分佈的平衡。    用於解決上述技術問題的方案   [0006] 本發明的一方案的基板加熱裝置,其特徵在於,包括:減壓部,對塗布了溶液的基板的容納空間的氛圍進行減壓;及紅外線加熱器,能夠通過紅外線加熱所述基板,所述紅外線加熱器呈在多個部位彎折的管狀,並且包括:彎曲部,以向外側凸出的方式彎折;及蓋部,配置為從外側覆蓋所述彎曲部的至少一部分。   [0007] 根據該構成,因為紅外線加熱器包括配置為從外側覆蓋彎曲部的至少一部分的蓋部,所以能夠避免彎曲部露出,從而能夠抑制彎曲部與其他部分相比發生降溫。即,因為通過蓋部能夠從外側加熱彎曲部的至少一部分,所以能夠抑制彎曲部與其他部分產生溫度差。因此,能夠提高紅外線加熱器的溫度分佈的平衡。   [0008] 也可以是,在上述的基板加熱裝置中,所述紅外線加熱器還包括多個直部,所述多個直部在第一方向上具有長邊,並且在與所述第一方向交叉的第二方向上並列配置,所述彎曲部連結相鄰的2個所述直部的端部,所述蓋部以從外側覆蓋多個所述彎曲部的方式在所述第二方向上直線狀地延伸。   根據該構成,蓋部以從外側覆蓋多個彎曲部的方式在第二方向上直線狀地延伸,由此能夠一併地避免多個彎曲部露出,因此能夠一併地抑制多個彎曲部與其他部分相比發生降溫。即,因為通過蓋部能夠從外側一併地加熱多個彎曲部,所以能夠抑制多個彎曲部與其他部分產生溫度差。因此,能夠有效地提高紅外線加熱器的溫度分佈的平衡。此外,紅外線加熱器還包括多個直部,由此多個直部彼此相鄰,能夠提高相互的發熱溫度,因此能夠在較高溫度下提高紅外線加熱器的溫度分佈的平衡,所述多個直部在第一方向上具有長邊,並且並列地配置在與第一方向交叉的第二方向上。   [0009] 也可以是,在上述的基板加熱裝置中,所述蓋部與彎曲部之間的間隔比相鄰的2個所述直部之間的間隔小。   根據該構成,與使蓋部與彎曲部之間的間隔為相鄰的2個直部之間的間隔以上的情況相比較,能夠更可靠地避免彎曲部露出,因此能夠更可靠地抑制彎曲部與其他部分相比發生降溫。即,因為通過蓋部能夠從外側更可靠地加熱彎曲部的至少一部分,所以能夠更可靠地抑制彎曲部與其他部分產生溫度差。因此,能夠更可靠地提高紅外線加熱器的溫度分佈的平衡。   [0010] 也可以是,在上述的基板加熱裝置中,所述紅外線加熱器還包括:第一導入部,設置在所述紅外線加熱器的一端;第二導入部,設置在所述紅外線加熱器的另一端,所述第一導入部以及所述第二導入部的至少一方設置在所述蓋部的端部。   然而,若第一導入部與第二導入部過於接近,則存在該部分的溫度比其他部分的溫度更為降溫的傾向。但是,根據該構成,因為第一導入部與第二導入部一定程度地遠離,所以能夠抑制紅外線加熱器局部地降溫。因此,能夠提高紅外線加熱器的溫度分佈的平衡。   [0011] 也可以是,在上述的基板加熱裝置中,在俯視狀態下,所述紅外線加熱器的外形呈矩形形狀,所述第一導入部以及所述第二導入部在所述紅外線加熱器的一邊的中央部對置地配置。   根據該構成,因為第一導入部與第二導入部一定程度地遠離,所以能夠抑制紅外線加熱器局部地降溫。因此,能夠提高紅外線加熱器的溫度分佈的平衡。   [0012] 也可以是,在上述的基板加熱裝置中,在俯視狀態下,所述紅外線加熱器的外形呈矩形形狀,所述第一導入部配置在所述紅外線加熱器的一邊的一側,所述第二導入部配置在所述一邊的另一側。   根據該構成,因為紅外線加熱器中的從第一導入部或者第二導入部中的任一個到彎曲部的部分為在2個部位彎折的U字管狀(即沿著除了紅外線加熱器的所述一邊以外的三邊的形狀),所以與直管狀以及L字管狀的情況相比較,能夠提高紅外線加熱器的柔軟性。因此,即便紅外線加熱器的所述一邊熱膨脹或者熱收縮,也能夠利用紅外線加熱器的柔軟性來容許所述一邊的膨脹或者收縮。   [0013] 也可以是,在上述的基板加熱裝置中,在俯視狀態下,所述紅外線加熱器的外形呈矩形形狀,所述第一導入部配置在所述紅外線加熱器的一角部,所述第二導入部配置在所述一角部的對角部。   根據該構成,在俯視狀態下,第一導入部以及第二導入部的配置位置是以紅外線加熱器的中心為基準成為點對稱,並且第一導入部以及第二導入部較遠地遠離。由此,即便在第一導入部以及第二導入部比其他部分降溫的情況下,也不會降低相互的降溫溫度,從而能夠避免紅外線加熱器局部地過度降溫,因此能夠盡可能地提高紅外線加熱器的溫度分佈的平衡。   [0014] 也可以是,在上述的基板加熱裝置中,在俯視狀態下,所述紅外線加熱器呈點對稱形狀。   根據該構成,與在俯視狀態下紅外線加熱器呈非對稱形狀的情況相比較,能夠更可靠地提高紅外線加熱器的溫度分佈的平衡。   [0015] 也可以是,在上述的基板加熱裝置中,在俯視狀態下,所述紅外線加熱器的外形呈矩形形狀,所述第一導入部以及所述第二導入部鄰接地配置於所述紅外線加熱器的一角部。   根據該構成,因為第一導入部以及第二導入部之間的距離變得最小,所以能夠盡可能地抑制紅外線加熱器的熱膨脹或者熱收縮。   [0016] 也可以是,在上述的基板加熱裝置中,在俯視狀態下,所述第一導入部以及所述第二導入部的至少一部分進入所述紅外線加熱器的外部形狀內。   根據該構成,因為在配置紅外線加熱器時能夠避免第一導入部以及第二導入部成為妨礙,所以能夠提高佈局的自由度。例如,在一表面上鋪設多個紅外線加熱器時,能夠避免相鄰的2個紅外線加熱器在第一導入部以及第二導入部處發生干涉,因此能夠整齊地鋪設多個紅外線加熱器。   [0017] 也可以是,在上述的基板加熱裝置中,還包括加熱器單元,所述加熱器單元構成為在一表面上鋪設多個所述紅外線加熱器。   根據該構成,因為具備上述紅外線加熱器,所以能夠提高加熱器單元的溫度分佈的平衡。此外,在能夠個別地控制多個紅外線加熱器的情況下,能夠使一部分的紅外線加熱器的輸出比其他的紅外線加熱器的輸出大,所以能夠對基板進行溫度分佈良好的加熱。例如,在基板的四角的溫度較低的情況下,使配置在與該部分對應的位置的紅外線加熱器的輸出比其他的紅外線加熱器的輸出大,由此僅提高該部分的溫度,能夠提高基板整體的溫度分佈。   [0018] 也可以是,在上述的基板加熱裝置中,所述加熱器單元包括:多個第一紅外線加熱器,在一方向上鋪設配置;多個第二紅外線加熱器,在與所述一方向平行的方向上鋪設配置,所述第二紅外線加熱器以與相鄰的2個所述第一紅外線加熱器的邊界部鄰接的方式,在與所述一方向交叉的方向上與所述第一紅外線加熱器鋪設配置。   根據該構成,因為第一紅外線加熱器的溫度分佈與第二紅外線加熱器的溫度分佈能夠相互地補足,所以能夠更進一步地提高加熱器單元的溫度分佈的平衡。   [0019] 也可以是,在上述的基板加熱裝置中,在俯視狀態下,所述第二紅外線加熱器具有與所述第一紅外線加熱器相同的形狀。   根據該構成,與在俯視狀態下第二紅外線加熱器具有與第一紅外線加熱器不同的形狀的情況相比,能夠更可靠地提高加熱器單元的溫度分佈的平衡。此外,即便改變基板尺寸,也能夠通過改變紅外線加熱器的個數,等間隔地配置紅外線加熱器,而對基板進行溫度分佈良好的加熱。然而,在紅外線加熱器為單純的直管的情況下,若基板尺寸變大,則需要使直管的長度伸長,因此存在難以容許紅外線加熱器的熱膨脹的可能性。但是,根據該構成,即便基板尺寸變大,紅外線加熱器的尺寸也不會改變,因此能夠容易地容許紅外線加熱器的熱膨脹。   [0020] 也可以是,在上述的基板加熱裝置中,在俯視狀態下,所述第二紅外線加熱器具有使所述第一紅外線加熱器旋轉90度後的形狀。   根據該構成,因為能夠利用第一紅外線加熱器與第二紅外線加熱器來相互地補足由紅外線加熱器的形狀引起的溫度分佈,所以能夠更進一步地提高加熱器單元的溫度分佈的平衡。   [0021] 也可以是,在上述的基板加熱裝置中,還包括加熱部,所述加熱部隔著所述基板配置在與所述紅外線加熱器相反的一側,並且能夠加熱所述基板。   根據該構成,因為加熱部的加熱與紅外線加熱器的加熱相輔相成,能夠更有效地加熱基板。   [0022] 也可以是,在上述的基板加熱裝置中,還包括能夠容納所述基板、所述加熱部以及所述紅外線加熱器的腔室。   根據該構成,因為能夠在腔室內管理基板的加熱溫度,所以能夠有效地加熱基板。   [0023] 也可以是,在上述的基板加熱裝置中,所述基板、所述加熱部以及所述紅外線加熱器被共用的所述腔室容納。   根據該構成,能夠在共用的腔室內一併地進行加熱部對基板的加熱處理與紅外線加熱器對基板的加熱處理。即,不必像加熱部以及紅外線加熱器被容納於相互不同的腔室的情況那樣地,需要用於使基板在不同的2個腔室之間輸送的時間。因此,能夠更高效地進行基板的加熱處理。此外,與具備不同的2個腔室的情況相比較,能夠使裝置整體小型化。   [0024] 也可以是,在上述的基板加熱裝置中,所述溶液僅被塗布在所述基板的第一表面,所述加熱部被配置於與所述基板的第一表面相反的一側即第二表面的一側。   根據該構成,因為從加熱部產生的熱量從基板的第二表面的一側朝向第一表面的一側傳遞,所以能夠有效地加熱基板。此外,在利用加熱部加熱基板的期間,能夠高效地進行被塗布於基板的溶液的揮發或者醯亞胺化(例如成膜中的排氣)。   [0025] 也可以是,在上述的基板加熱裝置中,所述加熱部以及所述紅外線加熱器中的至少一方能夠階段性地加熱所述基板。   根據該構成,與加熱部以及紅外線加熱器僅能以恆定的溫度加熱基板的情況相比較,能夠高效地加熱基板以適合塗布於基板的溶液的成膜條件。因此,使塗布於基板的溶液階段性地乾燥,能夠良好地固化。   [0026] 也可以是,在上述的基板加熱裝置中,還包括位置調整部,所述位置調整部能夠調整所述加熱部以及所述紅外線加熱器中的至少一方與所述基板的相對位置。   根據該構成,與不具備所述位置調整部的情況相比較,容易調整基板的加熱溫度。例如,能夠在要使基板的加熱溫度變高的情況下,使加熱部以及紅外線加熱器接近基板,能夠在要使基板的加熱溫度變低的情況下,使加熱部以及紅外線加熱器遠離基板。因此,容易階段性地加熱基板。   [0027] 也可以是,在上述的基板加熱裝置中,所述位置調整部包括能夠使所述基板在所述加熱部與所述紅外線加熱器之間移動的移動部。   根據該構成,通過使基板在加熱部與紅外線加熱器之間移動,在將加熱部以及紅外線加熱器的至少一方配置在固定位置的狀態下,能夠調整基板的加熱溫度。因此,無需另外設置能夠使加熱部以及紅外線加熱器的至少一方移動的裝置,因此能夠以簡單的構成調整基板的加熱溫度。   [0028] 也可以是,在上述的基板加熱裝置中,在所述加熱部與所述紅外線加熱器之間設置有能夠輸送所述基板的輸送部,在所述輸送部形成有能夠使所述移動部通過的通過部。   根據該構成,因為使基板在加熱部與紅外線加熱器之間移動的情況下,能夠使基板通過通過部,所以無需使基板繞過輸送部而移動。因此,無需另外設置用於使基板繞過輸送部而移動的裝置,能夠以簡單的構成順暢地進行基板的移動。   [0029] 也可以是,在上述的基板加熱裝置中,所述移動部包括多個銷,所述多個銷能夠支承所述基板的與第一表面相反側的第二表面,並且能夠在所述第二表面的法線方向上移動,所述多個銷的前端被配置在與所述第二表面平行的面內。   根據該構成,因為能夠在穩定地支承基板的狀態下加熱基板,所以能夠使塗布於基板的溶液穩定地成膜。   [0030] 也可以是,在上述的基板加熱裝置中,在所述加熱部形成有多個插通孔,使所述加熱部在所述第二表面的法線方向上開口,所述多個銷的前端能夠經由所述多個插通孔而抵接於所述第二表面。   根據該構成,因為能夠短時間地在多個銷與加熱部之間進行基板的交接,所以能夠高效地調整基板的加熱溫度。   [0031] 也可以是,在上述的基板加熱裝置中,所述加熱部是電熱板。   根據該構成,因為能夠在基板的面內使基板的加熱溫度均勻化,所以能夠提高膜特性。例如,在使電熱板的一表面與基板的第二表面抵接的狀態下加熱基板,由此能夠提高基板的加熱溫度的面內均勻性。   [0032] 也可以是,在上述的基板加熱裝置中,還包括能夠檢測所述基板溫度的溫度檢測部。   根據該構成,能夠即時地掌握基板溫度。例如,基於溫度檢測部的檢測結果對基板進行加熱,從而能夠抑制基板溫度偏離目標值。   [0033] 也可以是,在上述的基板加熱裝置中,還包括回收部,能夠回收從塗布於所述基板的所述溶液揮發的溶劑。   根據該構成,能夠防止從溶液揮發的溶劑向工廠側排出。此外,在將回收部連接於減壓部(真空泵)的管線的情況下,能夠防止從溶液揮發的溶劑再次液化而逆流至真空泵內。進而,從溶液揮發的溶劑能夠作為清洗液再利用。例如,清洗液能夠用於噴嘴前端的清洗、附著於刮取構件的液體的清洗等,所述刮取構件對附著在噴嘴上的液體進行刮取。   [0034] 本發明的一方案的基板加熱方法,其特徵在於,包含以下工程:減壓工程,對塗布了溶液的基板的容納空間的氛圍進行減壓;加熱工程,通過紅外線加熱所述基板,在所述加熱工程中,使用紅外線加熱器,通過紅外線加熱所述基板,所述紅外線加熱器呈在多個部位彎折的管狀,並且包括:彎曲部,以向外側凸出的方式彎折;及蓋部,配置為從外側覆蓋所述彎曲部的至少一部分。   [0035] 根據該方法,在加熱工程中,因為紅外線加熱器包括配置為從外側覆蓋彎曲部的至少一部分的蓋部,所以能夠避免彎曲部露出,從而能夠抑制彎曲部與其他部分相比發生降溫。即,因為通過蓋部能夠從外側加熱彎曲部的至少一部分,所以能夠抑制彎曲部與其他部分產生溫度差。因此,能夠提高紅外線加熱器的溫度分佈的平衡。   [0036] 本發明的一方案的紅外線加熱器,是能夠通過紅外線加熱基板,其特徵在於,所述紅外線加熱器呈在多個部位彎折的管狀,並且包括:彎曲部,以向外側凸出的方式彎折;及蓋部,配置為從外側覆蓋所述彎曲部的至少一部分。   [0037] 根據該構成,因為紅外線加熱器包括配置為從外側覆蓋彎曲部的至少一部分的蓋部,所以能夠避免彎曲部露出,從而能夠抑制彎曲部與其他部分相比發生降溫。即,因為通過蓋部能夠從外側加熱彎曲部的至少一部分,所以能夠抑制彎曲部與其他部分產生溫度差。因此,能夠提高紅外線加熱器的溫度分佈的平衡。    發明效果   [0038] 根據本發明,能夠提供一種基板加熱裝置以及紅外線加熱器,能夠提高紅外線加熱器的溫度分佈的平衡。The technical problem to be solved by the invention   [0004] However, the above-mentioned heating process includes: the first process of evaporating the solvent at a lower temperature and the second process of curing the polyamide acid at a higher temperature. Consider using an infrared heater in the second process, and the substrate can be heated by infrared rays. As the infrared heater, for example, an infrared heater having a W-shape or a U-shape is known (for example, refer to Patent Document 3). However, W-shaped or U-shaped infrared heaters have exposed parts that are bent so as to protrude outward, and the exposed parts will be lower in temperature compared to other parts. Therefore, there is a problem in improving the balance of the temperature distribution of the infrared heaters. .  [0005] In view of the above situation, an object of the present invention is to provide a substrate heating device, a substrate heating method, and an infrared heater, which can improve the balance of the temperature distribution of the infrared heater. [0006] A substrate heating device according to an aspect of the present invention is characterized by including: a pressure reducing portion that reduces the pressure of the atmosphere of the accommodation space of the substrate coated with the solution; and an infrared heater , The substrate can be heated by infrared rays, the infrared heater is in the shape of a tube that is bent at multiple locations, and includes: a bent portion that is bent so as to protrude outward; and a cover portion that is configured to cover the At least part of the bent portion.  [0007] According to this configuration, since the infrared heater includes the cover portion arranged to cover at least a part of the bent portion from the outside, it is possible to prevent the bent portion from being exposed, and it is possible to prevent the bent portion from cooling down compared with other portions. That is, since at least a part of the bent part can be heated from the outside by the cover part, it is possible to suppress the temperature difference between the bent part and other parts. Therefore, the balance of the temperature distribution of the infrared heater can be improved. [0008] It may also be that, in the above-mentioned substrate heating device, the infrared heater further includes a plurality of straight portions, and the plurality of straight portions have long sides in the first direction and are aligned with each other in the first direction. Are arranged side by side in a second intersecting direction, the bent portion connects the ends of two adjacent straight portions, and the cover portion is arranged in the second direction so as to cover a plurality of the bent portions from the outside Extend linearly. According to this configuration, the cover portion linearly extends in the second direction so as to cover the plurality of curved portions from the outside. This prevents the plurality of curved portions from being exposed at the same time. Therefore, it is possible to suppress the plurality of curved portions and the Cooling occurs compared to other parts. That is, since the cover part can collectively heat the plurality of bent parts from the outside, it is possible to suppress the temperature difference between the plurality of bent parts and other parts. Therefore, the balance of the temperature distribution of the infrared heater can be effectively improved. In addition, the infrared heater also includes a plurality of straight portions, whereby the plurality of straight portions are adjacent to each other, and the mutual heating temperature can be increased, so the temperature distribution balance of the infrared heater can be improved at a higher temperature. The straight portion has a long side in the first direction, and is arranged side by side in a second direction crossing the first direction.  [0009] In the above-mentioned substrate heating device, the interval between the cover portion and the curved portion may be smaller than the interval between two adjacent straight portions. According to this configuration, compared with the case where the interval between the cover and the bent portion is greater than the interval between two adjacent straight portions, the bent portion can be more reliably prevented from being exposed, and therefore the bent portion can be suppressed more reliably The temperature drops compared to other parts. That is, since at least a part of the bent part can be heated more reliably from the outside by the cover part, the temperature difference between the bent part and other parts can be suppressed more reliably. Therefore, the balance of the temperature distribution of the infrared heater can be improved more reliably. [0010] It may also be that, in the above-mentioned substrate heating device, the infrared heater further includes: a first introduction part arranged at one end of the infrared heater; a second introduction part arranged on the infrared heater At the other end of the cover, at least one of the first introduction part and the second introduction part is provided at the end of the cover part.   However, if the first introduction part and the second introduction part are too close, the temperature of this part tends to be lower than the temperature of other parts. However, according to this configuration, since the first introduction portion and the second introduction portion are separated to some extent, it is possible to prevent the infrared heater from locally lowering the temperature. Therefore, the balance of the temperature distribution of the infrared heater can be improved. [0011] In the above-mentioned substrate heating device, in a plan view, the infrared heater has a rectangular shape, and the first introduction part and the second introduction part are in the infrared heater The central part of one side of the machine is placed opposite to each other. "According to this structure, the first introduction part and the second introduction part are separated to a certain extent, so that the infrared heater can be prevented from locally cooling down. Therefore, the balance of the temperature distribution of the infrared heater can be improved. [0012] In the above-mentioned substrate heating device, in a plan view, the infrared heater has a rectangular shape, and the first introduction portion is arranged on one side of the infrared heater, The second introduction part is arranged on the other side of the one side. According to this structure, the portion from either the first introduction part or the second introduction part to the curved part of the infrared heater is a U-shaped tube bent at two places (that is, along all parts of the infrared heater except for the infrared heater). The shape of the three sides other than one side is described), so compared with the case of a straight tube and an L-shaped tube, the flexibility of the infrared heater can be improved. Therefore, even if the one side of the infrared heater thermally expands or contracts, the flexibility of the infrared heater can be used to allow the one side to expand or contract. [0013] In the substrate heating device described above, in a plan view, the infrared heater has a rectangular shape, and the first introduction portion is disposed at a corner of the infrared heater, and The second introduction part is arranged at the opposite corner of the one corner part. "According to this configuration, in a plan view, the arrangement positions of the first introduction part and the second introduction part are point-symmetrical with respect to the center of the infrared heater, and the first introduction part and the second introduction part are far apart. As a result, even when the temperature of the first introduction part and the second introduction part are lower than other parts, the mutual cooling temperature will not be lowered, so that the infrared heater can be prevented from excessively cooling locally, so the infrared heating can be increased as much as possible. The balance of the temperature distribution of the device.  [0014] In the above-mentioned substrate heating device, the infrared heater may have a point-symmetrical shape in a plan view. "According to this structure, compared with the case where the infrared heater has an asymmetrical shape in a plan view, it is possible to more reliably improve the balance of the temperature distribution of the infrared heater. [0015] In the substrate heating device described above, in a plan view, the infrared heater has a rectangular shape, and the first introduction part and the second introduction part are arranged adjacent to the A corner of the infrared heater. "According to this configuration, since the distance between the first introduction portion and the second introduction portion is minimized, it is possible to suppress thermal expansion or thermal contraction of the infrared heater as much as possible.  [0016] In the substrate heating device described above, at least a part of the first introduction portion and the second introduction portion may enter the outer shape of the infrared heater in a plan view. "According to this configuration, it is possible to prevent the first introduction portion and the second introduction portion from becoming obstructive when disposing the infrared heater, so that the degree of freedom of the layout can be increased. For example, when a plurality of infrared heaters are laid on one surface, it is possible to avoid interference of two adjacent infrared heaters at the first introduction part and the second introduction part, so that the plurality of infrared heaters can be laid neatly.  [0017] The above-mentioned substrate heating device may further include a heater unit configured to lay a plurality of the infrared heaters on one surface. "According to this configuration, since the infrared heater described above is provided, the balance of the temperature distribution of the heater unit can be improved. In addition, when a plurality of infrared heaters can be individually controlled, the output of some infrared heaters can be made larger than the output of other infrared heaters, so that the substrate can be heated with good temperature distribution. For example, when the temperature of the four corners of the substrate is low, the output of the infrared heater arranged at the position corresponding to the part is greater than the output of other infrared heaters, so that only the temperature of the part can be increased. The temperature distribution of the entire substrate. [0018] It may also be that, in the above-mentioned substrate heating device, the heater unit includes: a plurality of first infrared heaters arranged in one direction; and a plurality of second infrared heaters arranged in the same direction The second infrared heater is laid in a parallel direction, and the second infrared heater is adjacent to the boundary portion of the two adjacent first infrared heaters, and is intersected with the first infrared heater in the direction intersecting the one direction. Infrared heater laying configuration. "According to this configuration, since the temperature distribution of the first infrared heater and the temperature distribution of the second infrared heater can complement each other, the balance of the temperature distribution of the heater unit can be further improved.  [0019] In the substrate heating device described above, in a plan view, the second infrared heater may have the same shape as the first infrared heater. "According to this configuration, compared to the case where the second infrared heater has a different shape from the first infrared heater in a plan view, it is possible to more reliably improve the balance of the temperature distribution of the heater unit. In addition, even if the size of the substrate is changed, the number of infrared heaters can be changed and the infrared heaters can be arranged at equal intervals to heat the substrate with a good temperature distribution. However, when the infrared heater is a simple straight tube, if the size of the substrate becomes large, the length of the straight tube needs to be extended. Therefore, there is a possibility that it is difficult to tolerate thermal expansion of the infrared heater. However, according to this configuration, even if the size of the substrate becomes larger, the size of the infrared heater does not change, and therefore the thermal expansion of the infrared heater can be easily tolerated.  [0020] In the substrate heating device described above, in a plan view, the second infrared heater may have a shape obtained by rotating the first infrared heater by 90 degrees. "According to this configuration, since the first infrared heater and the second infrared heater can complement each other for the temperature distribution caused by the shape of the infrared heater, it is possible to further improve the balance of the temperature distribution of the heater unit.  [0021] The above-mentioned substrate heating device may further include a heating unit that is arranged on the opposite side of the infrared heater with the substrate interposed therebetween and can heat the substrate.   According to this configuration, since the heating by the heating unit and the heating by the infrared heater are supplemented, the substrate can be heated more efficiently.  [0022] The above-mentioned substrate heating device may further include a chamber capable of accommodating the substrate, the heating unit, and the infrared heater. "According to this configuration, since the heating temperature of the substrate can be managed in the chamber, the substrate can be efficiently heated.  [0023] In the above-mentioned substrate heating device, the substrate, the heating unit, and the infrared heater may be accommodated in the common chamber. "According to this configuration, the heating treatment of the substrate by the heating unit and the heating treatment of the substrate by the infrared heater can be performed together in a common chamber. That is, it is not necessary to require time for transporting the substrate between two different chambers as in the case where the heating unit and the infrared heater are housed in different chambers. Therefore, the heating treatment of the substrate can be performed more efficiently. In addition, compared with the case where two different chambers are provided, the entire device can be downsized. [0024] In the above-mentioned substrate heating device, the solution is applied only on the first surface of the substrate, and the heating part is arranged on the side opposite to the first surface of the substrate. One side of the second surface. "According to this configuration, since the heat generated from the heating portion is transferred from the side of the second surface of the substrate toward the side of the first surface, the substrate can be efficiently heated. In addition, during the heating of the substrate by the heating unit, the volatilization or imidization of the solution applied to the substrate can be efficiently performed (for example, exhaust gas during film formation).  [0025] In the substrate heating device described above, at least one of the heating unit and the infrared heater may be capable of heating the substrate stepwise. "According to this configuration, compared with the case where the heating unit and the infrared heater can only heat the substrate at a constant temperature, the substrate can be efficiently heated to suit the film formation conditions of the solution applied to the substrate. Therefore, the solution applied to the substrate is dried step by step and can be cured well.  [0026] The substrate heating device described above may further include a position adjustment unit capable of adjusting the relative position of at least one of the heating unit and the infrared heater to the substrate. "According to this configuration, it is easier to adjust the heating temperature of the substrate compared to the case where the position adjustment unit is not provided. For example, when the heating temperature of the substrate is to be increased, the heating unit and the infrared heater can be close to the substrate, and when the heating temperature of the substrate is to be lowered, the heating unit and the infrared heater can be moved away from the substrate. Therefore, it is easy to heat the substrate in stages.  [0027] In the above-mentioned substrate heating device, the position adjustment section may include a moving section capable of moving the substrate between the heating section and the infrared heater. "According to this configuration, by moving the substrate between the heating section and the infrared heater, the heating temperature of the substrate can be adjusted in a state where at least one of the heating section and the infrared heater is arranged at a fixed position. Therefore, there is no need to separately provide a device capable of moving at least one of the heating unit and the infrared heater, and therefore the heating temperature of the substrate can be adjusted with a simple configuration. [0028] In the substrate heating device described above, a conveying section capable of conveying the substrate is provided between the heating section and the infrared heater, and a conveying section capable of conveying the substrate is formed in the conveying section. The passing part through which the moving part passes. "According to this configuration, when the substrate is moved between the heating portion and the infrared heater, the substrate can be passed through the passage portion, so there is no need to move the substrate by bypassing the conveying portion. Therefore, there is no need to separately provide a device for moving the substrate by bypassing the conveying section, and the substrate can be moved smoothly with a simple configuration. [0029] In the above-mentioned substrate heating device, the moving portion may include a plurality of pins capable of supporting the second surface of the substrate on the opposite side to the first surface and being able to The second surface moves in the normal direction, and the front ends of the plurality of pins are arranged in a plane parallel to the second surface. "According to this configuration, since the substrate can be heated in a state where the substrate is stably supported, the solution applied to the substrate can be stably formed into a film. [0030] In the above-mentioned substrate heating device, a plurality of insertion holes are formed in the heating portion, the heating portion is opened in the normal direction of the second surface, and the plurality The tip of the pin can abut on the second surface through the plurality of insertion holes. "According to this configuration, since the substrate can be transferred between the plurality of pins and the heating portion in a short time, it is possible to efficiently adjust the heating temperature of the substrate.  [0031] In the above-mentioned substrate heating device, the heating unit may be an electric heating plate. "According to this configuration, since the heating temperature of the substrate can be made uniform within the surface of the substrate, the film characteristics can be improved. For example, by heating the substrate in a state where the one surface of the electric heating plate is in contact with the second surface of the substrate, the in-plane uniformity of the heating temperature of the substrate can be improved.  [0032] The above-mentioned substrate heating device may further include a temperature detection unit capable of detecting the temperature of the substrate.   According to this structure, the substrate temperature can be grasped instantly. For example, by heating the substrate based on the detection result of the temperature detection unit, it is possible to suppress the deviation of the substrate temperature from the target value.  [0033] The above-mentioned substrate heating device may further include a recovery part capable of recovering the solvent volatilized from the solution applied to the substrate. "According to this structure, it is possible to prevent the solvent volatilized from the solution from being discharged to the factory side. In addition, when the recovery part is connected to the pipeline of the decompression part (vacuum pump), it is possible to prevent the solvent volatilized from the solution from being liquefied again and flowing back into the vacuum pump. Furthermore, the solvent volatilized from the solution can be reused as a cleaning liquid. For example, the cleaning liquid can be used for cleaning the tip of the nozzle, cleaning the liquid attached to the scraping member that scrapes the liquid attached to the nozzle, or the like. [0034] The substrate heating method of one aspect of the present invention is characterized by including the following processes: a pressure reduction process, which depressurizes the atmosphere of the accommodation space of a substrate coated with a solution; a heating process, which heats the substrate by infrared rays, In the heating process, an infrared heater is used to heat the substrate by infrared rays. The infrared heater is in the shape of a tube that is bent at multiple locations and includes: a bent portion that is bent in a manner protruding to the outside; And the cover part is arranged to cover at least a part of the curved part from the outside. [0035] According to this method, in the heating process, since the infrared heater includes a cover portion configured to cover at least a part of the bent portion from the outside, it is possible to prevent the bent portion from being exposed, and it is possible to prevent the bent portion from cooling down compared with other parts. . That is, since at least a part of the bent part can be heated from the outside by the cover part, it is possible to suppress the temperature difference between the bent part and other parts. Therefore, the balance of the temperature distribution of the infrared heater can be improved. [0036] An infrared heater according to an aspect of the present invention is capable of heating a substrate by infrared rays, and is characterized in that the infrared heater has a tubular shape bent at a plurality of locations, and includes: a bent portion to protrude outward And the cover part is configured to cover at least a part of the bent part from the outside.  [0037] According to this configuration, since the infrared heater includes the cover portion arranged to cover at least a part of the bent portion from the outside, it is possible to prevent the bent portion from being exposed, and it is possible to suppress the temperature drop of the bent portion compared to other portions. That is, since at least a part of the bent part can be heated from the outside by the cover part, it is possible to suppress the temperature difference between the bent part and other parts. Therefore, the balance of the temperature distribution of the infrared heater can be improved.   Effect of the invention   [0038] According to the present invention, it is possible to provide a substrate heating device and an infrared heater, which can improve the balance of the temperature distribution of the infrared heater.

[0040] 以下,參照附圖對本發明的實施方式進行說明。在以下的說明中,設定XYZ直角坐標系,一邊參照該XYZ直角坐標系,一邊對各構件的位置關係進行說明。將水平面內的規定方向作為X方向,將在水平面內與X方向正交的方向作為Y方向,將分別與X方向以及Y方向正交的方向(即垂直方向)作為Z方向。 (第一實施方式)   [0041] <基板加熱裝置>   圖1是第一實施方式的基板加熱裝置1的立體圖。   如圖1所示,基板加熱裝置1具備:腔室2、減壓部3、氣體供給部4、加熱部5、紅外線加熱器6、位置調整部7、輸送部8、溫度檢測部9、回收部11、擺動部12以及控制部15。控制部15總體上控制基板加熱裝置1的構成要素。為了方便,在圖1中,以雙點虛線示出腔室2、減壓部3以及氣體供給部4。   [0042] <腔室>   腔室2能夠容納基板10、加熱部5以及紅外線加熱器6。基板10、加熱部5以及紅外線加熱器6被容納於共用的腔室2。腔室2形成為長方體的箱狀。具體而言,腔室2由以下構件形成:矩形形狀的頂板21;矩形板狀的底板22,與頂板21對置;矩形框狀的周壁23,與頂板21以及底板22的外周邊緣相連。例如,在周壁23的-X方向側設置有基板搬入搬出口23a,用於相對於腔室2搬入以及搬出基板10。   [0043] 腔室2構成為能夠以密閉空間容納基板10。例如,利用熔接等無間隙地接合頂板21、底板22以及周壁23的各連接部,由此能夠提高腔室2內的氣密性。   [0044] <減壓部>   減壓部3被連接於底板22的-Y方向側的基板搬入搬出口23a附近的角部。減壓部3能夠對腔室2內進行減壓。例如,減壓部3具備泵機構等的減壓機構。減壓機構具備真空泵13。另外,減壓部3的連接部位並不限定於底板22的-Y方向側的基板搬入搬出口23a附近的角部。減壓部3也可以連接於腔室2。   [0045] 減壓部3能夠對基板10的容納空間的氛圍進行減壓,所述基板10塗布有用於形成聚醯亞胺膜(聚醯亞胺)的溶液(以下稱為“聚醯亞胺形成用液”)。聚醯亞胺形成用液例如包含聚醯胺酸或者聚醯亞胺粉末。聚醯亞胺形成用液僅塗布於呈矩形板狀的基板10的第一表面10a(上表面)。另外,溶液並不限定於聚醯亞胺形成用液。溶液只要是用於在基板10上形成規定的膜即可。   [0046] <氣體供給部>   氣體供給部4被連接于周壁23的+X方向側的頂板21附近的角部。氣體供給部4能夠調整腔室2的內部氛圍的狀態。氣體供給部4向腔室2內供給氮氣(N2 )、氦氣(He)、氬氣(Ar)等的惰性氣體。另外,氣體供給部4的連接部位並不限定于周壁23的+X方向側的頂板21附近的角部。氣體供給部4只要被連接於腔室2即可。此外,也可以通過在基板降溫時供給氣體,用於基板冷卻。   [0047] 能夠通過氣體供給部4調整腔室2的內部氛圍的氧氣濃度。腔室2的內部氛圍的氧濃度(質量基準)優選是越低越好。具體而言,優選是將腔室2的內部氛圍的氧濃度設為100ppm以下,更優選是設為20ppm以下。   例如,如後所述,在對塗布於基板10的聚醯亞胺形成用液進行固化時的氛圍中,通過像這樣地使氧濃度為優選的上限以下,能夠容易地進行聚醯亞胺形成用液的固化。   [0048] <加熱部>   加熱部5被配置在腔室2內的下方。加熱部5能夠以第一溫度加熱基板10。加熱部5能夠階段性地加熱基板10。包含第一溫度的溫度範圍例如是20℃以上並且300℃以下的範圍。加熱部5被配置在與基板10的第一表面10a相反側即第二表面10b(下表面)的一側。   [0049] 加熱部5呈矩形板狀。加熱部5能夠從下方支承基板10。加熱部5的上表面呈沿著基板10的第一表面10a的平坦面。加熱部5例如是電熱板。   [0050] <紅外線加熱器>   紅外線加熱器6被配置在腔室2內的上方。紅外線加熱器6能夠以比第一溫度高的第二溫度來加熱基板10。紅外線加熱器6與加熱部5分別獨立地設置。紅外線加熱器6能夠階段性地加熱基板10。包含第二溫度的溫度範圍例如是200℃以上並且600℃以下的範圍。紅外線加熱器6被配置在基板10的第一表面10a的一側。   [0051] 紅外線加熱器6由頂板21支承。紅外線加熱器6被固定在腔室2內的頂板21附近的固定位置。紅外線加熱器6的峰值波長範圍例如是1.5μm以上並且4μm以下的範圍。另外,紅外線加熱器6的峰值波長範圍並不限於上述範圍,能夠根據要求規格而設定為各種範圍。   [0052] 圖2是第一實施方式的紅外線加熱器6的俯視圖。   如圖2所示,紅外線加熱器6呈在多個部位彎折的管狀。在俯視狀態下,紅外線加熱器6的外部形狀呈矩形形狀。紅外線加熱器6的外部形狀的一邊的長度例如是225mm左右。紅外線加熱器6的全長(管路全長)例如是2475mm左右。紅外線加熱器6例如由石英管形成。   [0053] 紅外線加熱器6具備:直部組30、彎曲部組31、蓋部32、33、第一導入部34以及第二導入部35。   直部組30具備多個(例如,在本實施方式為9個)直部30a~30i。直部30a~30i呈在第一方向V1上具有長邊(長度)的直管狀。直部30a~30i在與第一方向V1正交(交叉)的第二方向V2上並列配置有多個。多個直部30a~30i在第二方向V2上隔開實質相同的間隔S1(中心軸間的間距)地配置。相鄰的2個直部30a~30i之間的間隔S1例如是25mm左右。另外,從第二方向V2的一側朝向另一側、以直部30a、30b、30c、30d、30e、30f、30g、30h、30i的順序進行配置。   [0054] 彎曲部組31具備多個(例如,在本實施方式為8個)彎曲部31a~31h。彎曲部31a~31h以呈向外側凸出的方式彎折。彎曲部31a~31h連結相鄰的2個直部30a~30i的端部。例如,彎曲部31a連結直部30a的一端部與直部30b的一端部。即,彎曲部31a~31h是以連結紅外線加熱器6中的相鄰的2個直部30a~30i的端部的方式彎曲的彎曲部。在俯視狀態下,彎曲部31a~31h呈向外側凸出的U字管狀。另外,從第二方向V2的一側朝向另一側、以彎曲部31a、31b、31c、31d、31e、31f、31g、31h的順序進行配置。   [0055] 蓋部32、33以從外側覆蓋多個彎曲部31a~31h的方式在第二方向V2上直線狀地延伸。具體而言,蓋部32、33具備:第一蓋部32,從第一方向V1的一側覆蓋4個彎曲部31b、31d、31f、31h;第二蓋部33,從第一方向V1的另一側覆蓋4個彎曲部31a、31c、31e、31g。   [0056] 第一蓋部32連結於第二方向V2的一側的直部30a的一端部。第一蓋部32呈在第二方向V2具有長邊的直管狀。第一蓋部32與彎曲部31b、31d、31f、31h之間的間隔S2(中心軸間的間距)、與相鄰的2個直部30a~30i之間的間隔S1為實質相同的大小。第一蓋部32與彎曲部31b、31d、31f、31h之間的間隔S2例如是25mm左右。   [0057] 第二蓋部33連結於第二方向V2的另一側的直部30i的一端部。第二蓋部33呈L字管狀。即,第二蓋部33具備:蓋主體33a,在第二方向V2上具有長邊;延伸部33b,連結于蓋主體33a的一端部,並且在第一方向V1上具有長邊。第二蓋部33與彎曲部31a、31c、31e、31g之間的間隔S3(中心軸間的間距)、與相鄰的2個直部30a~30i之間的間隔S1為實質相同的大小。第二蓋部33中的蓋主體33a與彎曲部31a、31c、31e、31g之間的間隔S3例如是25mm左右。另外,第二蓋部33中的延伸部33b與直部30a之間的間隔也是25mm左右。   [0058] 第一導入部34被設置於紅外線加熱器6的一端。第一導入部34被配置於紅外線加熱器6的一邊的一側。具體而言,第一導入部34被設置于第一蓋部32的一端。在俯視狀態下,第一導入部34的一部分進入紅外線加熱器6的外部形狀內。   [0059] 第二導入部35被設置於紅外線加熱器6的另一端。第二導入部35被配置於紅外線加熱器6的一邊的另一側。第二導入部35在第二方向V2上被配置於第一導入部34的相反側。具體而言,第二導入部35被設置于第二蓋部33中的延伸部33b的一端。在俯視狀態下,第二導入部35的一部分進入紅外線加熱器6的外部形狀內。   [0060] <位置調整部>   如圖1所示,位置調整部7被配置在腔室2的下方。位置調整部7能夠調整加熱部5以及紅外線加熱器6與基板10的相對位置。位置調整部7具備移動部7a與驅動部7b。移動部7a是上下(Z方向)延伸的柱狀構件。移動部7a 的上端被固定於加熱部5的下表面。驅動部7b能夠使移動部7a上下移動。移動部7a能夠使基板10在加熱部5與紅外線加熱器6之間移動。具體而言,在基板10被載置在加熱部5的上表面的狀態下,移動部7a通過驅動部7b的驅動,能夠使基板10上下移動(參照圖5以及圖6)。   [0061] 驅動部7b配置在腔室2的外部。因此,即便假設隨著驅動部7b的驅動而產生微塵,通過使腔室2內為密閉空間,也能夠避免微塵向腔室2內的入侵。   [0062] <輸送部>   輸送部8在腔室2內被配置在加熱部5與紅外線加熱器6之間。輸送部8能夠輸送基板10。在輸送部8形成有能夠使移動部7a通過的通過部8h。輸送部8具備沿著基板10的輸送方向即X方向配置的多個輸送輥8a。   [0063] 多個輸送輥8a遠離地配置在周壁23的+Y方向側與-Y方向側。即,通過部8h是周壁23的+Y方向側的輸送輥8a與周壁23的-Y方向側的輸送輥8a之間的空間。   [0064] 例如,在周壁23的+Y方向側以及-Y方向側,沿著X方向分別地配置有在Y方向上延伸的多個軸(未圖示)。各輸送輥8a由驅動機構(未圖示)驅動而繞各軸旋轉。   [0065] 圖3是用於說明輸送輥8a、基板10以及加熱部5的配置關係的圖。圖3相當於基板加熱裝置1的俯視圖。為了方便,在圖3中以雙點虛線示出腔室2。   在圖3中,附圖標記L1是周壁23的+Y方向側的輸送輥8a與周壁23的-Y方向側的輸送輥8a遠離(相距)的間隔(以下稱為“輥遠離間隔”)。此外,附圖標記L2是基板10的Y方向的長度(以下稱為“基板長度”)。此外,附圖標記L3是加熱部5的Y方向的長度(以下稱為“加熱部長度”)。   [0066] 如圖3所示,輥遠離間隔L1比基板長度L2小,並且比加熱部長度L3大(L3<L1<L2)。輥遠離間隔L1比加熱部長度L3大,由此移動部7a能夠與加熱部5一起通過通過部8h(參照圖5以及圖6)。   [0067] <溫度檢測部>   如圖1所示,溫度檢測部9被配置在腔室2外。溫度檢測部9能夠檢測基板10的溫度。具體而言,溫度檢測部9被設置在頂板21的上部。在頂板21中安裝有未圖示的窗戶。溫度檢測部9穿過頂板21的窗戶而檢測基板10的溫度。溫度檢測部9例如是放射溫度計等的非接觸溫度感測器。另外,雖然圖1中僅圖示了1個溫度檢測部9,但是溫度檢測部9的數量不限於1個,也可以是多個。例如,優選是將多個溫度檢測部9配置在頂板21的中央部以及四個角。   [0068] <回收部>   回收部11連接於減壓部3(真空泵13)的管線。回收部11能夠回收從塗布於基板10的聚醯亞胺形成用液揮發的溶劑。   [0069] <擺動部>   擺動部12在腔室2內被配置於基板10的-X方向側。擺動部12能夠擺動基板10。在基板10被加熱的狀態中,擺動部12例如使基板10在沿著XY平面的方向或者沿著Z方向的方向擺動。另外,擺動部12的配置位置並不限定於腔室2內的基板10的-X方向側。擺動部12例如也可以設置於位置調整部7。   [0070] <基板加熱方法>   接著對本實施方式的基板加熱方法進行說明。在本實施方式中,使用上述的基板加熱裝置1對基板10進行加熱。通過控制部15控制在基板加熱裝置1的各構件中進行的動作。   [0071] 圖4是用於說明第一實施方式的基板加熱裝置1的動作的一例的圖。圖5是後續圖4的、第一實施方式的基板加熱裝置1的動作說明圖。圖6是後續圖5的、第一實施方式的基板加熱裝置1的動作說明圖。   為了方便,在圖4~圖6中,省略了基板加熱裝置1的構成要素之中的減壓部3、氣體供給部4、溫度檢測部9、回收部11、擺動部12以及控制部15的圖示。   [0072] 本實施方式的基板加熱方法包括:減壓工程、第一加熱工程以及第二加熱工程。   在減壓工程中,對塗布了聚醯亞胺形成用液的基板10的容納空間的氛圍進行減壓。   如圖4所示,在減壓工程中,基板10被配置於輸送輥8a。此外,在減壓工程中,加熱部5位於底板22附近。在減壓工程中,加熱部5以及基板10以加熱部5的熱量不會傳遞至基板10的程度遠離。在減壓工程中,接通加熱部5的電源。加熱部5的溫度例如是250℃左右。另一方面,在減壓工程中,斷開紅外線加熱器6的電源。   [0073] 在減壓工程中,使基板10的容納空間的氛圍從大氣壓減壓到500Pa以下。例如,在減壓工程中使腔室內壓力逐漸從大氣壓下降到20Pa。   [0074] 在減壓工程中,使腔室2的內部氛圍的氧濃度盡可能地低。例如,在減壓工程中,使腔室2內的真空度為20Pa以下。由此,能夠使腔室2內的氧氣濃度為100ppm以下。   [0075] 在減壓工程之後,在第一加熱工程中,以第一溫度加熱基板10。   如圖5所示,在第一加熱工程中,使加熱部5移動至上方,使基板10載置在加熱部5的上表面。由此,通過使加熱部5抵接基板10的第二表面10b,加熱部5的熱量直接傳遞至基板10。在第一加熱工程中,加熱部5的溫度例如維持在250℃。因此,基板溫度能夠上升到250℃。另一方面,在第一加熱工程中,紅外線加熱器6的電源一直處於斷開狀態。   [0076] 另外,在第一加熱工程中,加熱部5位於通過部8h(參照圖1)內。為了方便,在圖5中,以雙點虛線示出移動前(減壓工程時的位置)的加熱部5,以實線示出移動後(第一加熱工程時的位置)的加熱部5。   [0077] 在第一加熱工程中,在保持減壓工程的氛圍的狀態下,基板溫度為150℃到300℃的範圍,將基板10加熱到使得塗布於基板10的聚醯亞胺形成用液揮發或者醯亞胺化。例如,在第一加熱工程中,對基板10進行加熱的時間為10min以下。具體而言,在第一加熱工程中,將對基板10進行加熱的時間設為3min。例如,在第一加熱工程中,使基板溫度從25℃緩慢地上升到250℃。   [0078] 第一加熱工程之後,在第二加熱工程中,以比第一溫度高的第二溫度對基板10進行加熱。在第二加熱工程中,使用紅外線加熱器6加熱基板10,所述紅外線加熱器6與第一加熱工程中使用的加熱部5分別獨立地設置。另外,第二加熱工程相當於申請專利範圍所述的加熱工程。   [0079] 如圖6所示,在第二加熱工程中,使加熱部5移動到比第一加熱工程時的位置的更上方,使基板10接近紅外線加熱器6。例如,在第二加熱工程中,加熱部5的溫度維持在250℃。此外,在第二加熱工程中,接通紅外線加熱器6的電源。例如,紅外線加熱器6能夠以450℃對基板10進行加熱。因此,基板溫度能夠上升到450℃。在第二加熱工程中,基板10比在第一加熱工程時更接近紅外線加熱器6,因此紅外線加熱器6的熱量被充分地傳遞至基板10。   [0080] 另外,在第二工程中,加熱部5位於輸送輥8a(圖1所示的通過部8h)的上方並且紅外線加熱器6的下方。為了方便,在圖6中,以雙點虛線示出移動前(第一加熱工程時的位置)的加熱部5,以實線示出移動後(第二加熱工程時的位置)加熱部5。   [0081] 在第二加熱工程中,在保持減壓工程的氛圍的狀態下,對基板10進行加熱,使基板溫度從第一加熱工程的溫度變為600℃以下。例如,在第二加熱工程中,使基板溫度從250℃急劇地上升到450℃。此外,在第二加熱工程中,使腔室內壓力維持在20Pa以下。   [0082] 第二加熱工程包括使基板10冷卻的冷卻工程。例如,在冷卻工程中,在保持減壓工程的氛圍或者低氧氛圍的狀態下對基板10進行冷卻,使基板溫度從第二加熱工程的溫度變為能夠對基板10進行輸送的溫度。在冷卻工程中,斷開紅外線加熱器6的電源。   [0083] 通過經過以上的工程,進行塗布於基板10的聚醯亞胺形成用液的揮發或者醯亞胺化,並且進行塗布於基板10的聚醯亞胺形成用液的醯亞胺化時的分子鏈的再排列,能夠形成聚醯亞胺膜。   [0084] 如上所述,根據本實施方式,紅外線加熱器6包括配置為從外側覆蓋彎曲部31a~31h的至少一部分的蓋部32、33,所以能夠避免彎曲部31a~31h的露出,從而能夠抑制彎曲部31a~31h與其他部分相比發生降溫。即,因為通過蓋部32、33能夠從外側加熱彎曲部31a~31h的至少一部分,所以能夠抑制彎曲部31a~31h與其他部分產生溫度差。因此,能夠提高紅外線加熱器6的溫度分佈的平衡。   [0085] 此外,蓋部32、33以從外側覆蓋多個彎曲部31a~31h的方式在第二方向V2上直線狀地延伸,由此能夠一併地避免多個彎曲部31a~31h露出,因此能夠一併地抑制多個彎曲部31a~31h與其他部分相比發生降溫。即,因為通過蓋部32、33,能夠從外側一併地加熱多個彎曲部31a~31h,所以能夠抑制多個彎曲部31a~31h與其他部分產生溫度差。因此,能夠高效地提高紅外線加熱器6的溫度分佈的平衡。此外,紅外線加熱器6還包括在第一方向V1上具有長邊、並且在與第一方向V1交叉的第二方向V2上並列配置的多個直部30a~30i,由此通過多個直部30a~30i相互地相鄰,能夠提高相互的發熱溫度,因此能夠在較高溫度下提高紅外線加熱器6的溫度分佈的平衡。   [0086] 然而,若第一導入部34與第二導入部35過於接近,則存在該部分的溫度與其他部分的溫度相比降溫的傾向。但是,根據本實施方式,通過將第一導入部34以及第二導入部35的兩者設置在蓋部32、33的端部,因為第一導入部34與第二導入部35一定程度地遠離,所以能夠抑制紅外線加熱器6局部地降溫。因此,能夠提高紅外線加熱器6的溫度分佈的平衡。此外,根據本實施方式,通過使第一導入部34與第二導入部35的距離(紅外線加熱器6的外部形狀的一邊的長度)為225mm左右,即便腔室2的頂板21熱膨脹或者熱收縮,也能夠容許所述膨脹或者收縮。   [0087] 此外,在俯視狀態下,紅外線加熱器6的外部形狀呈矩形形狀,第一導入部34配置在紅外線加熱器6的一邊的一側,第二導入部35配置在所述一邊的另一側,從而起到以下的效果。因為紅外線加熱器6中從第二導入部35到彎曲部31h的部分成為在2個部位彎折的U字管狀(即沿著除了紅外線加熱器6的所述一邊以外的三邊的形狀),所以與直管狀以及L字管狀的情況相比較,能夠提高紅外線加熱器6的柔軟性。因此,即便紅外線加熱器6的所述一邊熱膨脹或者熱收縮,由於紅外線加熱器6的柔軟性,也能夠容許所述一邊的膨脹或者收縮。   [0088] 此外,在俯視狀態下,第一導入部34以及第二導入部35的兩者都進入紅外線加熱器6的外部形狀內,由此在配置紅外線加熱器6時,因為能夠避免第一導入部34以及第二導入部35成為妨礙,所以能夠提高佈局的自由度。例如,在一表面上鋪設多個紅外線加熱器6時,能夠避免相鄰的2個紅外線加熱器6在第一導入部34以及第二導入部35處發生干涉,因此能夠整齊地鋪設多個紅外線加熱器6。   [0089] 此外,還包括加熱部5,隔著基板10配置在與紅外線加熱器6相反的一側,並且能夠加熱基板10,由此因為加熱部5的加熱與紅外線加熱器6的加熱相輔相成,能夠更有效地加熱基板10。   [0090] 此外,還包括能夠容納基板10、加熱部5以及紅外線加熱器6的腔室2,由此能夠在腔室2內管理基板10的加熱溫度,因此能夠有效地加熱基板10。   [0091] 此外,基板10、加熱部5以及紅外線加熱器6被共用的腔室2容納,由此能夠在共用的腔室2內一併地進行加熱部5對基板10的加熱處理與紅外線加熱器6對基板10的加熱處理。即,不必像加熱部5以及紅外線加熱器6被容納於相互不同的腔室2的情況那樣地,需要用於使基板10在不同的2個腔室2之間輸送的時間。因此,能夠更高效地進行基板10的加熱處理。此外,與具備不同的2個腔室2的情況相比,能夠使裝置整體小型化。   [0092] 此外,聚醯亞胺形成用液僅被塗布在基板10的第一表面10a,加熱部5被配置於基板10的第一表面10a的相反側即第二表面10b的一側,由此起到以下的效果。因為從加熱部5產生的熱量從基板10的第二表面10b的一側朝向第一表面10a的一側傳遞,所以能夠有效地加熱基板10。此外,在利用加熱部5加熱基板10的期間,能夠高效地進行被塗布於基板10的聚醯亞胺形成用液的揮發或者醯亞胺化(例如成膜中的排氣)。   [0093] 此外,加熱部5以及紅外線加熱器6都能夠階段性地加熱基板10,由此起到以下的效果。與加熱部5以及紅外線加熱器6僅能以恆定的溫度加熱基板10的情況相比較,能夠高效地加熱基板10以適合塗布於基板10的聚醯亞胺形成用液的成膜條件。因此,使塗布於基板10的聚醯亞胺形成用液階段性地乾燥,能夠良好地固化。   [0094] 此外,還包括位置調整部7,能夠調整加熱部5以及紅外線加熱器6與基板10的相對位置,由此,與不具備位置調整部7的情況相比較,容易調整基板10的加熱溫度。例如,能夠在要使基板10的加熱溫度變高的情況下,使加熱部5以及紅外線加熱器6接近基板10,能夠在要使基板10的加熱溫度變低的情況下,使加熱部5以及紅外線加熱器6遠離基板10。因此,容易階段性地加熱基板10。   [0095] 此外,位置調整部7包括能夠使基板10在加熱部5與紅外線加熱器6之間移動的移動部7a,從而通過使基板10在加熱部5與紅外線加熱器6之間移動,在將加熱部5以及紅外線加熱器6中的至少一方配置在固定位置的狀態下,能夠調整基板10的加熱溫度。因此,無需另外設置能夠使加熱部5以及紅外線加熱器6的至少一方移動的裝置,因此能夠以簡單的構成調整基板10的加熱溫度。   [0096] 此外,在加熱部5與紅外線加熱器6之間,設置有能夠輸送基板10的輸送部8,在輸送部8中形成有能夠使移動部7a通過的通過部8h,從而起到以下的效果。在使基板10在加熱部5與紅外線加熱器6之間移動的情況下,因為能夠使基板10通過通過部8h,所以無需使基板10繞過輸送部8而移動。因此,無需另外設置用於使基板10繞過輸送部8而移動的裝置,能夠以簡單的構成順暢地進行基板10的移動。   [0097] 此外,加熱部5是電熱板,由此能夠在基板10的面內使基板10的加熱溫度均勻化,因此能夠提高膜特性。例如,在使電熱板的一表面與基板10的第二表面10b抵接的狀態下加熱基板10,由此能夠提高基板10的加熱溫度的面內均勻性。   [0098] 此外,還包括能夠檢測基板10的溫度的溫度檢測部9,由此能夠即時地掌握基板10溫度。例如,通過基於溫度檢測部9的的檢測結果對基板10進行加熱,能夠抑制基板10溫度偏離目標值。   [0099] 此外,還包括回收部11,能夠回收從塗布於基板10的聚醯亞胺形成用液揮發的溶劑,由此能夠防止從聚醯亞胺形成用液揮發的溶劑向工廠側排出。此外,在將回收部11連接於減壓部3(真空泵13)的管線的情況下,能夠防止從聚醯亞胺形成用液揮發的溶劑再次液化而逆流至真空泵13內。進而,從聚醯亞胺形成用液揮發的溶劑能夠作為清洗液再利用。例如,清洗液能夠用於噴嘴前端的清洗、附著於刮取構件的液體的清洗等,所述刮取構件對附著在噴嘴上的液體進行刮取。   [0100] 此外,紅外線加熱器6被配置在基板10的第一表面10a的一側,由此從紅外線加熱器6產生的熱量從基板10的第一表面10a的一側傳遞至第二表面10b的一側,由此加熱部5的加熱與紅外線加熱器6的加熱相輔相成,能夠更有效地加熱基板10。   [0101] 此外,通過紅外線加熱器6的紅外線加熱,能夠在短時間內將基板10升溫到第二溫度。此外,因為能夠在使紅外線加熱器6與基板10遠離的狀態下,對基板10進行加熱(所謂的非接觸加熱),所以能夠保持基板10的清潔(所謂的清潔加熱)。   [0102] 此外,因為紅外線加熱器的峰值波長範圍是1.5μm以上並且4μm以下的範圍,而1.5μm以上並且4μm以下的範圍的波長與玻璃以及水等的吸收波長一致,因此能夠更有效地加熱基板10以及塗布於基板10的聚醯亞胺形成用液。   [0103] 此外,還包括能夠擺動基板10的擺動部12,由此能夠一邊擺動基板10,一邊加熱基板10,因此能夠提高基板10的溫度均勻性。   [0104] (第一變形例)   接著,使用圖7對第一實施方式的第一變形例進行說明。   圖7是示出第一實施方式的紅外線加熱器的第一變形例的俯視圖。   在第一變形例中,相對於第一實施方式,紅外線加熱器的形狀特別地不同。在圖7中,對與第一實施方式相同的構成賦予相同的附圖標記,省略其詳細說明。   [0105] <紅外線加熱器>   如圖7所示,本變形例的紅外線加熱器6A的外部形狀的一邊的長度以及全長比第一實施方式的紅外線加熱器6(參照圖2)的長度短。例如,紅外線加熱器6A的外部形狀的一邊的長度為210mm左右。例如,紅外線加熱器6A的全長為1890mm左右。   [0106] 直部30a~30g在第二方向V2上並列配置有多個(例如在本變形例中為7個)。本變形例的相鄰的2個直部30a~30g之間的間隔S1比第一實施方式的相鄰的2個直部30a~30i之間的間隔S1大。例如,本變形例的相鄰的2個直部30a~30g之間的間隔S1為30mm左右。   [0107] 蓋部32、33以從外側覆蓋多個(例如在本變形例中為6個)彎曲部31a~31f的方式在第二方向V2上直線狀地延伸。具體而言,蓋部32、33具備:第一蓋部32,從第一方向V1的一側覆蓋3個彎曲部31b、31d、31f;第二蓋部33,從第一方向V1的另一側覆蓋3個彎曲部31a、31c、31e。   [0108] 第一蓋部32與彎曲部31b、31d、31f之間的間隔S2與相鄰的2個直部30a~30g之間的間隔S1為實質相同的大小。第一蓋部32與彎曲部31b、31d、31f之間的間隔例如是30mm左右。   [0109] 第二蓋部33與彎曲部31a、31c、31e之間的間隔S3與相鄰的2個直部30a~30g之間的間隔S1為實質相同的大小。第二蓋部33中的蓋主體33a與彎曲部31a、31c、31e之間的間隔例如是30mm左右。另外,第二蓋部33中的延伸部33b與直部30a之間的間隔也是30mm左右。   [0110] 如上所述,根據本變形例,通過使紅外線加熱器6A的外部形狀的一邊的長度以及全長比第一實施方式的紅外線加熱器6的長度短,能夠實現紅外線加熱器6A的輕量化以及輕巧化。此外,本變形例的紅外線加熱器6A能夠毫無問題地作為低溫用(例如350℃~400℃的加熱溫度)的紅外線加熱器來使用,因此能夠實現低成本化。   [0111] (第二變形例)   接著,使用圖8對第一實施方式的第二變形例進行說明。   圖8是示出第一實施方式的紅外線加熱器的第二變形例的俯視圖。   在第二變形例中,相對於第一變形例,紅外線加熱器的形狀特別地不同。在圖8中,對與第一變形例相同的構成賦予相同的附圖標記,省略其詳細說明。   [0112] <紅外線加熱器>   如圖8所示,本變形例的紅外線加熱器6B的全長比第一變形例的紅外線加熱器6A(參照圖7)的長度要長。例如,紅外線加熱器6B的全長為2070mm左右。另外,紅外線加熱器6B的外部形狀的一邊的長度為210mm左右。   [0113] 第一蓋部32與彎曲部31b、31d、31f之間的間隔比相鄰的2個直部30a~30g之間的間隔S1小。第一蓋部32與彎曲部31b、31d、31f之間的間隔例如是15mm左右。   [0114] 第二蓋部33與彎曲部31a、31c、31e之間的間隔比相鄰的2個直部30a~30g之間的間隔S1小。第二蓋部33中的蓋主體33a與彎曲部31a、31c、31e之間的間隔S3例如是15mm左右。另外,第二蓋部33中的延伸部33b與直部30a之間的間隔是30mm左右。   [0115] 如上所述,根據本變形例,通過使蓋部32、33與彎曲部31a~31f之間的間隔S2、S3比相鄰的2個直部30a~30g之間的間隔S1小,起到以下的效果。與蓋部32、33與彎曲部31a~31f之間的間隔S2、S3為相鄰的2個直部30a~30g之間的間隔S1以上的情況相比較,能夠更可靠地避免彎曲部31a~31f的露出,因此能夠更可靠地抑制彎曲部31a~31f與其他部分相比發生降溫。即,因為通過蓋部32、33能夠從外側更可靠地加熱彎曲部31a~31f的至少一部分,所以能夠更可靠地抑制彎曲部31a~31f與其他部分產生溫度差。因此,能夠更可靠地提高紅外線加熱器6B的溫度分佈的平衡。   [0116] (第二實施方式)   接著,使用圖9~圖12對本發明的第二實施方式進行說明。   圖9是第二實施方式的紅外線加熱器206的俯視圖。   在第二實施方式中,相對於第一實施方式,紅外線加熱器的形狀特別地不同。在圖9中,對與第一實施方式相同的構成賦予相同的附圖標記,省略其詳細說明。   [0117] <紅外線加熱器>   如圖9所示,在俯視狀態下,紅外線加熱器206的外部形狀呈矩形形狀。紅外線加熱器206在俯視狀態下呈點對稱形狀(軸對稱的形狀)。   [0118] 第一蓋部32連結於第二方向V2的一側的直部30a的一端部。第一蓋部32呈在第二方向V2上具有長邊的直管狀。   第二蓋部233連結於第二方向V2的另一側的直部30i的一端部。第二蓋部233呈在第二方向V2上具有長邊的直管狀。   [0119] 第一導入部34被配置於紅外線加熱器206的一角部。具體而言,第一導入部34被設置于第一蓋部32的一端。   第二導入部35被配置於所述一角部的對角部。具體而言,第二導入部35被設置于第二蓋部233的一端。即,在第一方向V1以及第二方向V2上,第二導入部35被配置在第一導入部34的相反側。   [0120] 圖10是用於說明第二實施方式的基板加熱裝置201的動作的一例的圖。圖11是後續圖10的、第二實施方式的基板加熱裝置201的動作說明圖。圖12是後續圖11的、第二實施方式的基板加熱裝置201的動作說明圖。   為了方便,在圖10~圖12中,省略了基板加熱裝置201的構成要素之中的減壓部3、氣體供給部4、輸送部8、溫度檢測部9、回收部11、擺動部12以及控制部15的圖示。   [0121] 在第二實施方式中,相對於第一實施方式,位置調整部207的構成特別地不同。在圖10~圖12中,對與第一實施方式相同的構成賦予相同的附圖標記,省略其詳細說明。   [0122] <位置調整部>   如圖10所示,位置調整部207具備容納部270、移動部275以及驅動部279。   容納部270被配置在腔室2的下側。容納部270能夠容納移動部275以及驅動部279。容納部270形成為長方體的箱狀。具體而言,容納部270由以下構件形成:矩形板狀的第一支承板271;與第一支承板271對置的矩形板狀的第二支承板272;包圍板273,與第一支承板271以及第二支承板272的外周邊緣相連,並且以包圍移動部275以及驅動部279的周圍的方式覆蓋移動部275以及驅動部279。另外,也可以不設置包圍板273。即,位置調整部207至少具備第一支承板271、移動部275以及驅動部279即可。例如也可以設置有包圍裝置整體的外裝蓋。   [0123] 第一支承板271的外周邊緣被連接於腔室2的周壁23的下端。第一支承板271也作為腔室2的底板起作用。在第一支承板271上配置有加熱部205。具體而言,加熱部205在腔室2內由第一支承板271支承。   [0124] 包圍板273與周壁23上下連續地相連。腔室2構成為能夠在密閉空間內容納基板10。例如通過利用熔接熔接等無間隙地接合頂板21、作為底板的第一支承板271以及周壁23的各連接部,能夠提高腔室2內的氣密性。   [0125] 移動部275具備銷276、伸縮管277以及基台278。   銷276能夠支承基板10的第二表面10b,並且能夠在第二表面10b的法線方向(Z方向)上移動。銷276是上下延伸的棒狀構件。銷276的前端(上端)能夠抵接於基板10的第二表面10b,並且能夠遠離基板10的第二表面10b。   [0126] 在與第二表面10b平行的方向(X方向以及Y方向)上隔開間隔地設置有多個銷276。多個銷276分別形成為大致相同的長度。多個銷276的前端配置在與第二表面10b平行的面內(XY平面內)。   [0127] 伸縮管277被設置在第一支承板271與基台278之間。伸縮管277是以包圍銷276的周圍的方式進行覆蓋並且上下延伸的管狀構件。伸縮管277在第一支承板271與基台278之間上下自如地伸縮。伸縮管277例如是真空波紋管。   [0128] 伸縮管277設置有多個,與多個銷276的數量相同。多個伸縮管277的前端(上端)被固定于第一支承板271。具體而言,在第一支承板271上形成有使第一支承板271在厚度方向上開口的多個插通孔271h。各插通孔271h的內徑為與各伸縮管277的外徑大致相同大小。各伸縮管277的前端例如被嵌合固定于第一支承板271的各插通孔271h。   [0129] 基台278是與第一支承板271對置的板狀構件。基台278的上表面呈沿著基板10的第二表面10b的平坦面。在基台278的上表面固定有多個銷276的基端(下端)以及多個伸縮管277的基端(下端)。   [0130] 多個銷276的前端可插通加熱部205。在加熱部205中,在第二表面10b的法線方向上與第一支承板271的各插通孔271h(各伸縮管277的內部空間)重疊的位置,形成有使加熱部205在第二表面10b的法線方向(電熱板的厚度方向)開口的多個插通孔205h。   [0131] 多個銷276的前端能夠經由各伸縮管277的內部空間以及加熱部205的各插通孔205h而抵接於基板10的第二表面10b。因此,通過多個銷276的前端能夠以平行於XY平面的方式支承基板10。多個銷276一邊支承容納在腔室2內的基板10,一邊沿腔室2內的Z方向移動(參照圖10~圖12)。   [0132] 驅動部279被配置在腔室2的外部即容納部270內。因此即便假設隨著驅動部279的驅動而產生微塵,通過使腔室2內為密閉空間,也能夠避免微塵向腔室2內的入侵。   [0133] <基板加熱方法>   接著,對本實施方式的基板加熱方法進行說明。在本實施方式中,使用上述的基板加熱裝置201對基板10進行加熱。在基板加熱裝置201的各構件進行的動作由控制部15控制。另外,對於與第一實施方式相同的工程,省略了其詳細說明。   [0134] 本實施方式的基板加熱方法包括減壓工程、第一加熱工程以及第二加熱工程。   在減壓工程中,對塗布了聚醯亞胺形成用液的基板10進行減壓。   如圖10所示,在減壓工程中,基板10遠離加熱部205。具體而言,使多個銷276的前端經由各伸縮管277的內部空間以及加熱部205的各插通孔205h而抵接於基板10的第二表面10b,並且使基板10上升,由此使基板10遠離加熱部205。在減壓工程中,加熱部205以及基板10以加熱部205的熱量不會傳遞至基板10的程度遠離。在減壓工程中,接通加熱部205的電源。加熱部205的溫度,例如是250℃左右。另一方面,在減壓工程中,斷開紅外線加熱器206的電源。   [0135] 在減壓工程之後,在第一加熱工程中,以加熱部205的溫度加熱基板10。   如圖11所示,在第一加熱工程中,通過使多個銷276的前端遠離基板10的第二表面10b,使基板10抵接加熱部205。即,使基板10載置在加熱部205的上表面。由此,因為加熱部205抵接基板10的第二表面10b,所以加熱部5的熱量會直接傳遞至基板10。加熱部205的溫度例如在第一加熱工程中維持在250℃。因此,基板溫度能夠上升到250℃。另一方面,在第一加熱工程中,紅外線加熱器206的電源一直處於斷開狀態。   [0136] 第一加熱工程之後,在第二加熱工程中,以第二溫度對基板10進行加熱。   如圖12所示,在第二加熱工程中,通過使基板10上升到比第一加熱工程時的位置更高的位置,使基板10接近紅外線加熱器206。例如,在第二加熱工程中,加熱部205的溫度維持在250℃。此外,在第二加熱工程中,接通紅外線加熱器206的電源。例如,紅外線加熱器206能夠以450℃對基板10進行加熱。因此,基板溫度能夠上升到450℃。在第二加熱工程中,基板10比在第一加熱工程時更接近紅外線加熱器206,因此紅外線加熱器206的熱量被充分地傳遞至基板10。   [0137] 之後,經過與第一實施方式相同的工程,進行塗布於基板10的聚醯亞胺形成用液的揮發或者醯亞胺化,並且進行塗布於基板10的聚醯亞胺形成用液的醯亞胺化時的分子鏈的再排列,能夠形成聚醯亞胺膜。   [0138] 如上所述,根據本實施方式,在俯視狀態下,紅外線加熱器206的外部形狀呈矩形形狀,第一導入部34配置在紅外線加熱器206的一角部,第二導入部35配置在所述一角部的對角部,由此,在俯視狀態下,第一導入部34以及第二導入部35的配置位置以紅外線加熱器206的中心為基準而成為點對稱,並且第一導入部34以及第二導入部35較遠地遠離。由此,即便在第一導入部34以及第二導入部35與其他部分相比降溫的情況下,也不會降低相互的降溫溫度,從而能夠避免紅外線加熱器206局部地過度降溫,因此能夠盡可能地提高紅外線加熱器206的溫度分佈的平衡。   [0139] 此外,在俯視狀態下,紅外線加熱器206呈點對稱形狀,由此與在俯視狀態下,紅外線加熱器206呈非對稱形狀的情況相比較,能夠更可靠地提高紅外線加熱器206的溫度分佈的平衡。   [0140] 此外,移動部275包括能夠支承基板10的第二表面10b、並且能夠在第二表面10b的法線方向上移動的多個銷276,多個銷276的前端被配置在與第二表面10b平行的面內,從而起到以下的效果。能夠在穩定地支承基板10的狀態下對基板10進行加熱,因此能夠使塗布於基板10的聚醯亞胺形成用液穩定地成膜。   [0141] 此外,在加熱部205中,形成有使加熱部205在第二表面10b的法線方向開口的多個插通孔205h,各銷276的前端能夠經由各插通孔205h抵接第二表面10b,從而起到以下的效果。能夠在短時間內進行基板10在多個銷276與加熱部205之間的交接,因此能夠高效地調整基板10的加熱溫度。   [0142] (第三實施方式)   接著,使用圖13對本發明的第三實施方式進行說明。   圖13是第三實施方式的紅外線加熱器306的俯視圖。   在第三實施方式中,相對於第一實施方式,紅外線加熱器的形狀特別地不同。在圖13中,對與第一實施方式相同的構成賦予相同的附圖標記,省略其詳細說明。   [0143] <紅外線加熱器>   如圖13所示,在俯視狀態下,紅外線加熱器306的外部形狀呈矩形形狀。   第一蓋部32連結於第二方向V2的一側的直部30a的一端部。第一蓋部32呈在第二方向V2具有長邊的直管狀。   第二蓋部333連結於第二方向V2的另一側的直部30i的一端部。第二蓋部333呈U字管狀。即,第二蓋部333具備:蓋主體333a,在第二方向V2上具有長邊;第一延伸部333b,連結于蓋主體333a的一端部,並且在第一方向V1上具有長邊;第二延伸部333c,連結於第一延伸部333b的一端部,並且以從外側覆蓋第一蓋部32的方式在第二方向V2上具有長邊。另外,第二蓋部333中的蓋主體333a與彎曲部31a、31c、31e、31g之間的間隔S3與第二蓋部333中的第二延伸部333c與第一蓋部32之間的間隔S4為實質相同的大小。   [0144] 第一導入部34以及第二導入部35被鄰接地配置在紅外線加熱器306的一角部。在第一方向V1中,第一導入部34配置在比第二導入部35更內側。即,第一導入部34被配置在彎曲部31h與第二導入部35之間。   [0145] 如上所述,根據本實施方式,在俯視狀態下,紅外線加熱器306的外部形狀呈矩形形狀,第一導入部34以及第二導入部35被鄰接地配置在紅外線加熱器306的一角部,由此第一導入部34以及第二導入部35之間的距離變得最小,因此能夠盡可能地一直紅外線加熱器306的熱膨脹或者熱收縮。   [0146] (第四實施方式)   接著,使用圖14對本發明的第四實施方式進行說明。   圖14是第四實施方式的加熱器單元560的俯視圖。   在第四實施方式中,相對於第一實施方式,紅外線加熱器的配置方案特別地不同。在圖14中,對與第一實施方式相同的構成賦予相同的附圖標記,省略其詳細說明。   [0147] <加熱器單元>   如圖14所示,本實施方式的基板加熱裝置具備加熱器單元560,所述加熱器單元560由鋪設多個(例如在本實施方式中為11台)紅外線加熱器6而構成。   加熱器單元560具備第一紅外線加熱器組561、第二紅外線加熱器組562以及第三紅外線加熱器組563。   [0148] 第一紅外線加熱器組561具備多個(例如在本實施方式中為4台)第一紅外線加熱器561a~561d。多個第一紅外線加熱器561a~561d鋪設地配置於第一方向V1(一方向)。另外,從第一方向V1的一側朝向另一側、以第一紅外線加熱器561a、561b、561c、561d的順序進行配置。   [0149] 第二紅外線加熱器組562具備多個(例如在本實施方式中為3台)第二紅外線加熱器562a~562c。多個第二紅外線加熱器562a~562c鋪設地配置於與第一方向V1平行的方向。另外,從與第一方向V1平行的方向的一側朝向另一側、以第二紅外線加熱器562a、562b、562c的順序進行配置。   [0150] 第三紅外線加熱器組563具備多個(例如在本實施方式中為4台)第三紅外線加熱器563a~563d。多個第三紅外線加熱器563a~563d鋪設地配置於與第一方向V1平行的方向。另外,從與第一方向V1平行的方向的一側朝向另一側、以第三紅外線加熱器563a、563b、563c、563d的順序進行配置。   [0151] 第二紅外線加熱器562a~562c,以與相鄰的2個第一紅外線加熱器561a~561d的邊界部鄰接的方式,在第二方向V2(與所述一方向交叉的方向)上與第一紅外線加熱器561a~561d鋪設地配置。進而,第二紅外線加熱器562a~562c,在第二方向V2上,以與相鄰的2個第三紅外線加熱器563a~563d的邊界部鄰接的方式,在第二方向V2上與第三紅外線加熱器563a~563d鋪設地配置。即,第二紅外線加熱器562a~562c在第二方向V2上配置為被夾於相鄰的2個第一紅外線加熱器561a~561d的邊界部與相鄰的2個第三紅外線加熱器563a~563d的邊界部之間。   [0152] 在俯視狀態下,第二紅外線加熱器562a~562c具有與第一紅外線加熱器561a~561d以及第三紅外線加熱器563a~563d相同的形狀。另外,第一紅外線加熱器561a~561d、第二紅外線加熱器562a~562c以及第三紅外線加熱器563a~563d,相當於第一實施方式的紅外線加熱器6。   [0153] 如上所述,根據本實施方式,具備加熱器單元560,所述加熱器單元560構成為在一表面鋪設多個紅外線加熱器6,從而起到以下的效果。因為具備上述紅外線加熱器6,能夠提高加熱器單元560的溫度分佈的平衡。此外,在能夠個別地控制多個紅外線加熱器6的情況下,因為能夠使一部分的紅外線加熱器6的輸出比其他的紅外線加熱器6的輸出大,所以相對於基板10能夠進行溫度分佈良好的加熱。例如,在基板10的四角的溫度較低的情況下,使配置在與該部分對應的位置的紅外線加熱器6的輸出比其他的紅外線加熱器6的輸出大,由此僅提高該部分的溫度,從而能夠提高基板10整體的溫度分佈。   [0154] 此外,加熱器單元560包括:多個第一紅外線加熱器561a~561d,沿第一方向V1鋪設地配置;多個第二紅外線加熱器562a~562c,沿與第一方向V1平行的方向鋪設地配置,第二紅外線加熱器562a~562c,以與相鄰的2個第一紅外線加熱器561a~561d的邊界部鄰接的方式,在與第一方向V1交叉的第二方向V2上與第一紅外線加熱器561a~561d鋪設地配置,從而起到以下的效果。因為第一紅外線加熱器561a~561d的溫度分佈與第二紅外線加熱器562a~562c的溫度分佈能夠相互地補足,所以能夠更進一步地提高加熱器單元560的溫度分佈的平衡。   進而,在第二方向V2上,第二紅外線加熱器562a~562c與第三紅外線加熱器563a~563d鋪設地配置為使得第二紅外線加熱器562a~562c與相鄰的2個第三紅外線加熱器563a~563d的邊界部鄰接。因為第三紅外線加熱器563a~563d的溫度分佈與第二紅外線加熱器562a~562c的溫度分佈能夠相互地補足,所以能夠更進一步地提高加熱器單元560的溫度分佈的平衡。   [0155] 此外,在俯視狀態下,第二紅外線加熱器562a~562c具有與第一紅外線加熱器561a~561d以及第三紅外線加熱器563a~563d相同的形狀,從而起到以下的效果。與在俯視狀態下第二紅外線加熱器562a~562c具有第一紅外線加熱器561a~561d以及第三紅外線加熱器563a~563d不同的形狀的情況相比,能夠更可靠地提高加熱器單元560的溫度分佈的平衡。此外,即便改變基板尺寸,也能夠通過改變紅外線加熱器6的個數,等間隔地配置紅外線加熱器6,而能夠對基板10進行溫度分佈良好的加熱。然而,在紅外線加熱器為單純的直管的情況下,若基板尺寸變大,則須要使直管的長度伸長,因此存在難以容許紅外線加熱器的熱膨脹的可能性。但是,根據本實施方式之構成,即便基板尺寸變大,紅外線加熱器6的尺寸也不會改變,因此能夠容易地容許紅外線加熱器6的熱膨脹。   [0156] (第五實施方式)   接著,使用圖15對本發明的第五實施方式進行說明。   圖15是第五實施方式的加熱器單元660的俯視圖。   在第五實施方式中,相對於第四實施方式,紅外線加熱器的配置方案特別地不同。在圖15中,對與第四實施方式相同的構成賦予相同的附圖標記,省略其詳細說明。   [0157] <加熱器單元>   如圖15所示,本實施方式的加熱器單元660,具備第一紅外線加熱器組561、第二紅外線加熱器組662以及第三紅外線加熱器組563。   [0158] 在俯視狀態下,第二紅外線加熱器662a~662c具有使第一紅外線加熱器561a~561d或者第三紅外線加熱器563a~563d旋轉90度後的形狀。具體而言,在俯視狀態下,第二紅外線加熱器662a~662c,具有使第一紅外線加熱器561a~561d或者第三紅外線加熱器563a~563d以其中心為起點向右(順時針)旋轉90度後的形狀。另外,第一紅外線加熱器561a~561d、第二紅外線加熱器662a~662c以及第三紅外線加熱器563a~563d相當於第一實施方式的紅外線加熱器6。   [0159] 如上所述,根據本實施方式,在俯視狀態下,第二紅外線加熱器662a~662c具有使第一紅外線加熱器561a~561d或者第三紅外線加熱器563a~563d旋轉90度後的形狀,由此利用第一紅外線加熱器561a~561d、第二紅外線加熱器662a~662c與第三紅外線加熱器563a~563d,能夠相互地補足由紅外線加熱器6的形狀引起的溫度分佈,所以能夠更進一步地提高加熱器單元660的溫度分佈的平衡。   [0160] 另外,在上述的例子中示出的各構成構件的諸形狀或組合等為一例,基於設計要求等能夠進行各種變更。   此外,雖然在上述實施方式中,基板、加熱部以及紅外線加熱器被容納於共用的腔室內,但是本發明並不限定於此。例如,也可以是加熱部以及紅外線加熱器被容納於相互不同的腔室。   [0161] 此外,雖然在上述實施方式中,加熱部以及紅外線加熱器兩者都能夠階段性地加熱基板,但是本發明並不限定於此。例如,也可以是加熱部以及紅外線加熱器的至少一方能夠階段性地加熱基板。此外,也可以是加熱部以及紅外線加熱器兩者都僅能以恆定的溫度加熱基板。   [0162] 此外,可以在上述實施方式中使腔室的內壁能夠反射紅外線。例如,可以是使腔室的內壁為由鋁等的金屬形成的鏡面(反射面)。由此,與使腔室的內壁能夠吸收紅外線的材質相比較,能夠提高腔室內的溫度均勻性。   [0163] 此外,雖然在上述實施方式中,使用了多個輸送輥作為輸送部,但是本發明並不限定於此。例如,作為輸送部,可以使用傳送帶,也可以使用線性電機致動器。例如,也可為能夠在X方向上添加傳送帶以及線性電機致動器。由此,能夠調整X方向中的基板的輸送距離。   [0164] 此外,也可以在採用圖3所示的構成(在輸送部中形成有通過部的構成)以外的構成作為輸送部的情況下,使得加熱部在俯視狀態下的尺寸大於等於基板在俯視狀態下的尺寸。由此,與使加熱部在俯視狀態下的尺寸比基板在俯視狀態下的尺寸小的情況相比較,能夠更進一步提高基板的加熱溫度的面內均勻性。   [0165] 此外,雖然在上述實施方式中,在減壓工程以及第一加熱工程中,接通加熱部的電源,斷開紅外線加熱器的電源,但是本發明並不限定於此。例如,也可以是,在減壓工程以及第一加熱工程中接通加熱部以及紅外線加熱器的電源。   [0166] 此外,也可以是在上述實施方式中,在俯視狀態下紅外線加熱器的外部形狀呈矩形形狀,第一導入部以及第二導入部在紅外線加熱器的一邊的中央部對置地配置。根據該構成,因為第一導入部與第二導入部一定程度地遠離,所以能夠抑制紅外線加熱器局部地降溫。因此,能夠提高紅外線加熱器的溫度分佈的平衡。   [0167] 另外,作為上述實施方式或者其變形例而記載的各構成要素,在不脫離本發明的主旨的範圍內,能夠進行適當組合,此外,也可以在組合得到的多個構成要素之中,適當地不使用一部分的構成要素。   [0168] (實施例)   以下,通過實施例對本發明更具體地進行說明,但是本發明並不受以下的實施例的限定。   [0169] 本發明人通過以下的評價確認了:通過使紅外線加熱器包括以從外側覆蓋彎曲部的方式配置的蓋部,能夠提高紅外線加熱器的溫度分佈的平衡。   [0170] (比較例)   比較例的紅外線加熱器使用僅具備直部以及彎曲部的紅外線加熱器。即,在比較例中不具備蓋部。   [0171] (實施例)   實施例的紅外線加熱器使用具備直部、彎曲部以及蓋部的紅外線加熱器。即,相對於比較例,實施例的紅外線加熱器還具備蓋部。另外,實施例的紅外線加熱器相當於第一實施方式的紅外線加熱器6(參照圖2)。   [0172] (評價條件)   以下,對比較例以及實施例中的、通過紅外線加熱器進行加熱時的基板的溫度分佈的評價條件進行說明。   使用玻璃基板作為基板。基板配置在紅外線加熱器的正下方。基板的溫度為450℃。   在基板中,對與直部的長度方向中央部對應的部分(即,在基板的法線方向重疊的部分)的溫度(以下稱為“直部溫度”)進行測量。此外,在基板中,對與彎曲部對應的部分(即,在基板的法線方向重疊的部分)的溫度(以下稱為“彎曲部溫度”)進行測量。而且,算出直部溫度與彎曲部溫度差(以下稱為“溫度差”)。   [0173] (通過紅外線加熱器進行加熱時的基板的溫度分佈的評價結果)   在比較例的情況下,彎曲部比直部暗。由此可知彎曲部溫度比直部溫度低。在比較例的情況下,溫度差為5.8℃。   [0174] 在實施例的情況下,彎曲部比直部暗。但是,實施例的彎曲部比比較例的彎曲部亮。由此可知,即便在實施例中,彎曲部溫度比直部溫度低,但是其降低程度比比較例小。在實施例的情況下,溫度差為2.4℃。   如上所述可知,通過使紅外線加熱器包括以從外側覆蓋彎曲部的方式配置的蓋部,能夠提高紅外線加熱器的溫度分佈的平衡。此外,可知能夠提高基板的溫度分佈。[0040] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, an XYZ rectangular coordinate system is set, and the positional relationship of each member is described while referring to the XYZ rectangular coordinate system. The predetermined direction in the horizontal plane is defined as the X direction, the direction orthogonal to the X direction in the horizontal plane is defined as the Y direction, and the directions orthogonal to the X direction and the Y direction (that is, the vertical direction) are defined as the Z direction. (First Embodiment) [0041] <Substrate Heating Device> FIG. 1 is a perspective view of a substrate heating device 1 of the first embodiment. As shown in Fig. 1, the substrate heating device 1 includes: a chamber 2, a decompression unit 3, a gas supply unit 4, a heating unit 5, an infrared heater 6, a position adjustment unit 7, a transport unit 8, a temperature detection unit 9, and a recovery unit Section 11, swing section 12, and control section 15. The control unit 15 controls the constituent elements of the substrate heating device 1 as a whole. For convenience, in FIG. 1, the chamber 2, the decompression part 3, and the gas supply part 4 are shown with a double-dotted dashed line. [0042] <Chamber> The chamber 2 can accommodate the substrate 10, the heating unit 5, and the infrared heater 6. The substrate 10, the heating unit 5, and the infrared heater 6 are housed in a common chamber 2. The chamber 2 is formed in a rectangular parallelepiped box shape. Specifically, the chamber 2 is formed by the following components: a rectangular top plate 21; a rectangular plate-shaped bottom plate 22 opposed to the top plate 21; and a rectangular frame-shaped peripheral wall 23 connected to the outer peripheral edges of the top plate 21 and the bottom plate 22. For example, a substrate carry-in and carry-out port 23 a is provided on the −X direction side of the peripheral wall 23 for carrying in and carrying out the substrate 10 with respect to the chamber 2. [0043] The chamber 2 is configured to be able to accommodate the substrate 10 in a sealed space. For example, by joining each connection part of the top plate 21, the bottom plate 22, and the peripheral wall 23 by welding etc. without a gap, the airtightness in the chamber 2 can be improved. [0044] <Decompression part> The decompression part 3 is connected to the corner part of the board|substrate carrying-in/outlet 23a vicinity of the -Y direction side of the bottom plate 22. The decompression part 3 can decompress the inside of the chamber 2. For example, the decompression unit 3 includes a decompression mechanism such as a pump mechanism. The decompression mechanism includes a vacuum pump 13. In addition, the connection location of the decompression part 3 is not limited to the corner|angular part of the board|substrate carrying-in/outlet 23a vicinity of the -Y direction side of the bottom plate 22. The decompression part 3 may be connected to the chamber 2. [0045] The decompression section 3 can depressurize the atmosphere of the accommodating space of the substrate 10 coated with a solution for forming a polyimide film (polyimide) (hereinafter referred to as “polyimide”). Formation liquid"). The liquid for forming polyimide contains polyimide or polyimide powder, for example. The liquid for forming polyimide is applied only to the first surface 10 a (upper surface) of the substrate 10 having a rectangular plate shape. In addition, the solution is not limited to the solution for forming polyimide. The solution may be used as long as it is used to form a predetermined film on the substrate 10. [0046] <Gas Supply Portion> The gas supply portion 4 is connected to a corner portion near the top plate 21 on the +X direction side of the peripheral wall 23. The gas supply unit 4 can adjust the state of the internal atmosphere of the chamber 2. The gas supply unit 4 supplies inert gases such as nitrogen (N 2 ), helium (He), and argon (Ar) into the chamber 2. In addition, the connection location of the gas supply part 4 is not limited to the corner part of the top plate 21 vicinity of the +X direction side of the peripheral wall 23. As shown in FIG. The gas supply part 4 only needs to be connected to the chamber 2. In addition, it can also be used for substrate cooling by supplying gas when the substrate temperature is lowered. [0047] The oxygen concentration of the internal atmosphere of the chamber 2 can be adjusted by the gas supply unit 4. The oxygen concentration (mass standard) of the internal atmosphere of the chamber 2 is preferably as low as possible. Specifically, it is preferable to set the oxygen concentration of the internal atmosphere of the chamber 2 to 100 ppm or less, and more preferably to set it to 20 ppm or less. For example, as will be described later, in the atmosphere when the polyimide forming liquid applied on the substrate 10 is cured, the polyimide can be easily formed by setting the oxygen concentration below the preferred upper limit in this manner. The solidification of the liquid. [0048] <Heating Unit> The heating unit 5 is arranged below the chamber 2. The heating unit 5 can heat the substrate 10 at the first temperature. The heating unit 5 can heat the substrate 10 stepwise. The temperature range including the first temperature is, for example, a range of 20°C or more and 300°C or less. The heating unit 5 is arranged on the side opposite to the first surface 10 a of the substrate 10, that is, on the side of the second surface 10 b (lower surface). [0049] The heating part 5 has a rectangular plate shape. The heating unit 5 can support the substrate 10 from below. The upper surface of the heating part 5 is a flat surface along the first surface 10 a of the substrate 10. The heating unit 5 is, for example, an electric heating plate. [0050] <Infrared heater> The infrared heater 6 is arranged above the chamber 2. The infrared heater 6 can heat the substrate 10 at a second temperature higher than the first temperature. The infrared heater 6 and the heating unit 5 are provided independently of each other. The infrared heater 6 can heat the substrate 10 stepwise. The temperature range including the second temperature is, for example, a range of 200°C or higher and 600°C or lower. The infrared heater 6 is arranged on the side of the first surface 10 a of the substrate 10. [0051] The infrared heater 6 is supported by the top plate 21. The infrared heater 6 is fixed at a fixed position near the ceiling 21 in the chamber 2. The peak wavelength range of the infrared heater 6 is, for example, a range of 1.5 μm or more and 4 μm or less. In addition, the peak wavelength range of the infrared heater 6 is not limited to the above-mentioned range, and can be set to various ranges according to required specifications. [0052] FIG. 2 is a plan view of the infrared heater 6 of the first embodiment. As shown in Fig. 2, the infrared heater 6 has a tube shape bent at a plurality of places. In a plan view, the outer shape of the infrared heater 6 is rectangular. The length of one side of the outer shape of the infrared heater 6 is, for example, about 225 mm. The total length of the infrared heater 6 (the total length of the pipeline) is, for example, about 2475 mm. The infrared heater 6 is formed of, for example, a quartz tube. [0053] The infrared heater 6 includes a straight portion group 30, a curved portion group 31, cover portions 32, 33, a first introduction portion 34, and a second introduction portion 35. The straight portion group 30 includes a plurality of (for example, nine in this embodiment) straight portions 30a to 30i. The straight portions 30a to 30i have a straight tube shape having a long side (length) in the first direction V1. A plurality of straight portions 30a to 30i are arranged in parallel in a second direction V2 orthogonal to (crossing) the first direction V1. The plurality of straight portions 30a to 30i are arranged at substantially the same interval S1 (the pitch between the central axes) in the second direction V2. The interval S1 between two adjacent straight portions 30a to 30i is, for example, about 25 mm. In addition, the straight portions 30a, 30b, 30c, 30d, 30e, 30f, 30g, 30h, and 30i are arranged in this order from one side to the other side in the second direction V2. [0054] The bending portion group 31 includes a plurality of (for example, eight in this embodiment) bending portions 31a to 31h. The bent portions 31a to 31h are bent so as to protrude outward. The bent portions 31a to 31h connect the ends of two adjacent straight portions 30a to 30i. For example, the curved portion 31a connects one end of the straight portion 30a and one end of the straight portion 30b. That is, the bent portions 31a to 31h are bent portions that are bent so as to connect the ends of the two adjacent straight portions 30a to 30i in the infrared heater 6. In a plan view, the bent portions 31a to 31h have a U-shaped tube shape that protrudes outward. In addition, the curved portions 31a, 31b, 31c, 31d, 31e, 31f, 31g, and 31h are arranged in this order from one side to the other side in the second direction V2. [0055] The cover portions 32, 33 linearly extend in the second direction V2 so as to cover the plurality of curved portions 31a to 31h from the outside. Specifically, the cover portions 32 and 33 are provided with: a first cover portion 32 that covers the four curved portions 31b, 31d, 31f, and 31h from one side of the first direction V1; and a second cover portion 33 that extends from the first direction V1 The other side covers four curved portions 31a, 31c, 31e, and 31g. [0056] The first cover portion 32 is connected to one end of the straight portion 30a on one side in the second direction V2. The first cover portion 32 has a straight tube shape having a long side in the second direction V2. The interval S2 between the first cover portion 32 and the curved portions 31b, 31d, 31f, and 31h (the interval between the central axes) and the interval S1 between the two adjacent straight portions 30a to 30i are substantially the same size. The interval S2 between the first cover portion 32 and the curved portions 31b, 31d, 31f, and 31h is, for example, about 25 mm. [0057] The second cover portion 33 is connected to one end portion of the straight portion 30i on the other side in the second direction V2. The second cover 33 has an L-shaped tubular shape. That is, the second cover portion 33 includes a cover main body 33a having a long side in the second direction V2, and an extension portion 33b connected to one end of the cover main body 33a and having a long side in the first direction V1. The interval S3 between the second cover portion 33 and the curved portions 31a, 31c, 31e, and 31g (the interval between the central axes) and the interval S1 between the two adjacent straight portions 30a to 30i are substantially the same size. The interval S3 between the lid main body 33a and the curved portions 31a, 31c, 31e, and 31g in the second lid portion 33 is, for example, about 25 mm. In addition, the interval between the extension portion 33b and the straight portion 30a in the second cover portion 33 is also approximately 25 mm. [0058] The first introduction portion 34 is provided at one end of the infrared heater 6. The first introduction part 34 is arranged on one side of the infrared heater 6. Specifically, the first introduction portion 34 is provided at one end of the first cover portion 32. In a plan view, a part of the first introduction portion 34 enters the outer shape of the infrared heater 6. [0059] The second introduction part 35 is provided at the other end of the infrared heater 6. The second introduction part 35 is arranged on the other side of one side of the infrared heater 6. The second introduction portion 35 is arranged on the opposite side of the first introduction portion 34 in the second direction V2. Specifically, the second introduction portion 35 is provided at one end of the extension portion 33 b in the second cover portion 33. In a plan view, a part of the second introduction portion 35 enters the outer shape of the infrared heater 6. [0060] <Position Adjustment Unit> As shown in FIG. 1, the position adjustment unit 7 is arranged below the chamber 2. The position adjustment unit 7 can adjust the relative positions of the heating unit 5 and the infrared heater 6 and the substrate 10. The position adjustment unit 7 includes a moving unit 7a and a driving unit 7b. The moving part 7a is a columnar member extending up and down (Z direction). The upper end of the moving part 7a is fixed to the lower surface of the heating part 5. The driving part 7b can move the moving part 7a up and down. The moving part 7 a can move the substrate 10 between the heating part 5 and the infrared heater 6. Specifically, in a state where the substrate 10 is placed on the upper surface of the heating unit 5, the moving unit 7a can move the substrate 10 up and down by the driving of the driving unit 7b (see FIGS. 5 and 6). [0061] The driving unit 7b is arranged outside the chamber 2. Therefore, even if fine dust is generated as the driving portion 7b is driven, the intrusion of fine dust into the chamber 2 can be avoided by making the inside of the chamber 2 a closed space. [0062] <Conveying part> The conveying part 8 is arranged between the heating part 5 and the infrared heater 6 in the chamber 2. The transport unit 8 can transport the substrate 10. The conveying part 8 is formed with a passing part 8h through which the moving part 7a can pass. The transport unit 8 includes a plurality of transport rollers 8 a arranged along the X direction, which is the transport direction of the substrate 10. [0063] The plurality of conveying rollers 8a are arranged on the +Y direction side and the −Y direction side of the peripheral wall 23 so as to be spaced apart. That is, the passing portion 8h is a space between the conveying roller 8a on the +Y direction side of the peripheral wall 23 and the conveying roller 8a on the -Y direction side of the peripheral wall 23. [0064] For example, on the +Y direction side and the −Y direction side of the peripheral wall 23, a plurality of shafts (not shown) extending in the Y direction are respectively arranged along the X direction. Each conveying roller 8a is driven by a drive mechanism (not shown) to rotate around each axis. [0065] FIG. 3 is a diagram for explaining the arrangement relationship of the transport roller 8a, the substrate 10, and the heating unit 5. FIG. 3 corresponds to a plan view of the substrate heating device 1. For convenience, the chamber 2 is shown in FIG. 3 with a double-dot dashed line. In FIG. 3, the reference sign L1 is the distance (hereinafter referred to as “roller distance interval”) between the transport roller 8 a on the +Y direction side of the peripheral wall 23 and the transport roller 8 a on the −Y direction side of the peripheral wall 23. In addition, the reference sign L2 is the length of the substrate 10 in the Y direction (hereinafter referred to as “substrate length”). In addition, the reference symbol L3 is the length of the Y direction of the heating part 5 (hereinafter referred to as “heating part length”). [0066] As shown in FIG. 3, the roller separation distance L1 is smaller than the substrate length L2 and larger than the heating portion length L3 (L3<L1<L2). The distance L1 between the rollers is larger than the length L3 of the heating section, so that the moving section 7a can pass through the passage section 8h together with the heating section 5 (refer to FIGS. 5 and 6). [0067] <Temperature Detection Unit> As shown in FIG. 1, the temperature detection unit 9 is arranged outside the chamber 2. The temperature detection unit 9 can detect the temperature of the substrate 10. Specifically, the temperature detection unit 9 is provided on the upper part of the top plate 21. A window (not shown) is installed in the top plate 21. The temperature detection unit 9 detects the temperature of the substrate 10 through the window of the top plate 21. The temperature detection unit 9 is, for example, a non-contact temperature sensor such as a radiation thermometer. In addition, although only one temperature detection unit 9 is shown in FIG. 1, the number of temperature detection units 9 is not limited to one, and may be more than one. For example, it is preferable to arrange a plurality of temperature detection parts 9 at the center part and the four corners of the top plate 21. [0068] <Recovery part> The recovery part 11 is connected to the pipeline of the decompression part 3 (vacuum pump 13). The recovery part 11 can recover the solvent volatilized from the polyimide forming liquid applied to the substrate 10. [0069] <Swinging part> The swinging part 12 is arranged on the −X direction side of the substrate 10 in the chamber 2. The swing part 12 can swing the substrate 10. In a state where the substrate 10 is heated, the swing portion 12 swings the substrate 10 in a direction along the XY plane or in a direction along the Z direction, for example. In addition, the arrangement position of the swing portion 12 is not limited to the −X direction side of the substrate 10 in the chamber 2. The swing part 12 may be provided in the position adjustment part 7, for example. [0070] <Substrate Heating Method> Next, the substrate heating method of the present embodiment will be described. In this embodiment, the substrate 10 is heated using the substrate heating device 1 described above. The operation performed in each member of the substrate heating device 1 is controlled by the control unit 15. 4 is a diagram for explaining an example of the operation of the substrate heating device 1 of the first embodiment. FIG. 5 is an operation explanatory diagram of the substrate heating device 1 of the first embodiment following FIG. 4. FIG. 6 is an operation explanatory diagram of the substrate heating device 1 of the first embodiment following FIG. 5. For convenience, in FIGS. 4-6, the decompression part 3, the gas supply part 4, the temperature detection part 9, the recovery part 11, the swing part 12, and the control part 15 among the constituent elements of the substrate heating device 1 are omitted. Icon. [0072] The substrate heating method of this embodiment includes: a pressure reduction process, a first heating process, and a second heating process. In the decompression process, the atmosphere of the storage space of the substrate 10 coated with the polyimide formation liquid is decompressed. As shown in FIG. 4, in the pressure reduction process, the board|substrate 10 is arrange|positioned on the conveyance roller 8a. In addition, in the decompression process, the heating part 5 is located near the bottom plate 22. In the decompression process, the heating part 5 and the substrate 10 are separated so that the heat of the heating part 5 will not be transferred to the substrate 10. In the decompression process, the power supply of the heating unit 5 is turned on. The temperature of the heating part 5 is about 250 degreeC, for example. On the other hand, in the decompression process, the power supply of the infrared heater 6 is turned off. [0073] In the pressure reduction process, the atmosphere of the accommodation space of the substrate 10 is reduced from atmospheric pressure to 500 Pa or less. For example, in the decompression project, the pressure in the chamber is gradually reduced from atmospheric pressure to 20Pa. [0074] In the decompression process, the oxygen concentration of the internal atmosphere of the chamber 2 is made as low as possible. For example, in the decompression process, the degree of vacuum in the chamber 2 is set to 20 Pa or less. Thereby, the oxygen concentration in the chamber 2 can be 100 ppm or less. [0075] After the decompression process, in the first heating process, the substrate 10 is heated at the first temperature. As shown in FIG. 5, in the first heating process, the heating unit 5 is moved upward, and the substrate 10 is placed on the upper surface of the heating unit 5. Thus, by making the heating unit 5 abut on the second surface 10 b of the substrate 10, the heat of the heating unit 5 is directly transferred to the substrate 10. In the first heating process, the temperature of the heating part 5 is maintained at 250°C, for example. Therefore, the substrate temperature can rise to 250°C. On the other hand, in the first heating process, the power supply of the infrared heater 6 is always turned off. [0076] In addition, in the first heating process, the heating portion 5 is located in the passage portion 8h (refer to FIG. 1). For the sake of convenience, in FIG. 5, the heating unit 5 before the movement (position during the decompression process) is shown by a two-dot broken line, and the heating unit 5 after the movement (the position during the first heating process) is shown by a solid line. [0077] In the first heating process, while maintaining the atmosphere of the decompression process, the substrate temperature is in the range of 150° C. to 300° C., and the substrate 10 is heated so that the polyimide forming liquid coated on the substrate 10 Volatile or imidized. For example, in the first heating process, the time for heating the substrate 10 is 10 minutes or less. Specifically, in the first heating process, the time for heating the substrate 10 is set to 3 min. For example, in the first heating process, the substrate temperature is slowly increased from 25°C to 250°C. [0078] After the first heating process, in the second heating process, the substrate 10 is heated at a second temperature higher than the first temperature. In the second heating process, an infrared heater 6 is used to heat the substrate 10, and the infrared heater 6 and the heating part 5 used in the first heating process are respectively installed independently. In addition, the second heating process is equivalent to the heating process described in the scope of the patent application. [0079] As shown in FIG. 6, in the second heating process, the heating unit 5 is moved to a position higher than the position during the first heating process, and the substrate 10 is moved closer to the infrared heater 6. For example, in the second heating process, the temperature of the heating part 5 is maintained at 250°C. In addition, in the second heating process, the power of the infrared heater 6 is turned on. For example, the infrared heater 6 can heat the substrate 10 at 450°C. Therefore, the substrate temperature can rise to 450°C. In the second heating process, the substrate 10 is closer to the infrared heater 6 than in the first heating process, so the heat of the infrared heater 6 is sufficiently transferred to the substrate 10. [0080] In addition, in the second process, the heating portion 5 is located above the conveying roller 8a (passing portion 8h shown in FIG. 1) and below the infrared heater 6. For convenience, in FIG. 6, the heating unit 5 before the movement (position in the first heating process) is shown with a double-dotted broken line, and the heating unit 5 after the movement (the position in the second heating process) is shown with a solid line. [0081] In the second heating process, the substrate 10 is heated while maintaining the atmosphere of the decompression process so that the substrate temperature is changed from the temperature of the first heating process to 600° C. or less. For example, in the second heating process, the substrate temperature is increased sharply from 250°C to 450°C. In addition, in the second heating process, the pressure in the chamber is maintained below 20 Pa. [0082] The second heating process includes a cooling process for cooling the substrate 10. For example, in the cooling process, the substrate 10 is cooled while maintaining the atmosphere of the pressure reduction process or the low-oxygen atmosphere, and the substrate temperature is changed from the temperature of the second heating process to the temperature at which the substrate 10 can be transported. In the cooling process, the power of the infrared heater 6 is turned off. [0083] Through the above process, the volatilization or imidization of the polyimide forming liquid applied to the substrate 10 is performed, and the imidization of the polyimide forming liquid applied to the substrate 10 is performed The rearrangement of the molecular chain can form a polyimide film. [0084] As described above, according to the present embodiment, the infrared heater 6 includes the cover portions 32, 33 that are arranged to cover at least a part of the curved portions 31a to 31h from the outside. Therefore, it is possible to prevent the curved portions 31a to 31h from being exposed. The bending parts 31a to 31h are suppressed from being lowered in temperature compared with other parts. That is, since at least a part of the bent parts 31a to 31h can be heated from the outside by the cover parts 32 and 33, it is possible to suppress the temperature difference between the bent parts 31a to 31h and other parts. Therefore, the balance of the temperature distribution of the infrared heater 6 can be improved. [0085] In addition, the cover portions 32, 33 linearly extend in the second direction V2 so as to cover the plurality of curved portions 31a to 31h from the outside, thereby preventing the plurality of curved portions 31a to 31h from being exposed together. Therefore, it is possible to collectively suppress the temperature drop of the plurality of curved portions 31a to 31h compared with other portions. That is, since the cover portions 32 and 33 can collectively heat the plurality of curved portions 31a to 31h from the outside, it is possible to suppress the temperature difference between the plurality of curved portions 31a to 31h and other portions. Therefore, the balance of the temperature distribution of the infrared heater 6 can be efficiently improved. In addition, the infrared heater 6 further includes a plurality of straight portions 30a to 30i which have long sides in the first direction V1 and are arranged side by side in the second direction V2 intersecting the first direction V1, thereby passing through the plurality of straight portions. Since 30a to 30i are adjacent to each other and can increase the heat generation temperature of each other, it is possible to improve the balance of the temperature distribution of the infrared heater 6 at a relatively high temperature. [0086] However, if the first introduction part 34 and the second introduction part 35 are too close, the temperature of this part tends to be lower than the temperature of the other parts. However, according to this embodiment, by providing both the first introduction portion 34 and the second introduction portion 35 at the ends of the cover portions 32 and 33, the first introduction portion 34 and the second introduction portion 35 are separated to a certain extent. Therefore, it is possible to prevent the infrared heater 6 from cooling locally. Therefore, the balance of the temperature distribution of the infrared heater 6 can be improved. In addition, according to this embodiment, by making the distance between the first introduction portion 34 and the second introduction portion 35 (the length of one side of the outer shape of the infrared heater 6) approximately 225 mm, even if the ceiling 21 of the chamber 2 thermally expands or contracts , Can also tolerate the expansion or contraction. [0087] In addition, in a plan view, the outer shape of the infrared heater 6 is a rectangular shape, the first introduction portion 34 is arranged on one side of the infrared heater 6, and the second introduction portion 35 is arranged on the other side of the infrared heater 6. One side, so as to achieve the following effects. Because the portion from the second introduction portion 35 to the curved portion 31h of the infrared heater 6 becomes a U-shaped tube bent at two places (that is, a shape along three sides other than the one side of the infrared heater 6), Therefore, the flexibility of the infrared heater 6 can be improved compared with the case of a straight tube and an L-shaped tube. Therefore, even if the one side of the infrared heater 6 is thermally expanded or thermally contracted, due to the flexibility of the infrared heater 6, the expansion or contraction of the one side can be allowed. [0088] In addition, in a plan view, both of the first introduction portion 34 and the second introduction portion 35 enter the outer shape of the infrared heater 6. Therefore, when the infrared heater 6 is arranged, the first introduction can be avoided. Since the introduction part 34 and the second introduction part 35 become an obstacle, the degree of freedom of layout can be improved. For example, when a plurality of infrared heaters 6 are laid on one surface, it is possible to avoid interference of two adjacent infrared heaters 6 at the first introduction part 34 and the second introduction part 35, so that the plurality of infrared heaters can be laid neatly. Heater 6. [0089] In addition, it also includes a heating unit 5, which is arranged on the opposite side of the infrared heater 6 with the substrate 10 interposed therebetween, and can heat the substrate 10. Therefore, because the heating of the heating unit 5 and the heating of the infrared heater 6 complement each other, The substrate 10 can be heated more efficiently. [0090] In addition, the chamber 2 capable of accommodating the substrate 10, the heating unit 5, and the infrared heater 6 is further included, so that the heating temperature of the substrate 10 can be managed in the chamber 2, and therefore the substrate 10 can be heated efficiently. [0091] In addition, the substrate 10, the heating unit 5, and the infrared heater 6 are housed in the common chamber 2, so that the heating process and infrared heating of the substrate 10 by the heating unit 5 can be performed in the common chamber 2. The heat treatment of the substrate 10 by the device 6. That is, as in the case where the heating unit 5 and the infrared heater 6 are housed in different chambers 2 from each other, it is not necessary to require time for transporting the substrate 10 between the two different chambers 2. Therefore, the heat treatment of the substrate 10 can be performed more efficiently. In addition, compared with the case where two different chambers 2 are provided, the entire device can be downsized. [0092] In addition, the polyimide forming liquid is applied only on the first surface 10a of the substrate 10. The heating unit 5 is arranged on the opposite side of the first surface 10a of the substrate 10, that is, on the side of the second surface 10b. This has the following effects. Since the heat generated from the heating part 5 is transferred from the side of the second surface 10b of the substrate 10 toward the side of the first surface 10a, the substrate 10 can be heated efficiently. In addition, during the heating of the substrate 10 by the heating unit 5, the volatilization or imidization of the polyimide forming liquid applied to the substrate 10 can be efficiently performed (for example, exhaust gas during film formation). [0093] In addition, both the heating unit 5 and the infrared heater 6 can heat the substrate 10 in stages, thereby achieving the following effects. Compared with the case where the heating unit 5 and the infrared heater 6 can only heat the substrate 10 at a constant temperature, the substrate 10 can be efficiently heated to suit the film forming conditions of the polyimide forming liquid applied to the substrate 10. Therefore, the polyimide forming liquid applied to the substrate 10 is dried stepwise and can be cured well. [0094] In addition, a position adjustment unit 7 is also included, which can adjust the relative positions of the heating unit 5 and the infrared heater 6 and the substrate 10. This makes it easier to adjust the heating of the substrate 10 compared to the case where the position adjustment unit 7 is not provided. temperature. For example, when the heating temperature of the substrate 10 is to be increased, the heating section 5 and the infrared heater 6 can be brought close to the substrate 10, and when the heating temperature of the substrate 10 is to be lowered, the heating section 5 and The infrared heater 6 is far away from the substrate 10. Therefore, it is easy to heat the substrate 10 in stages. [0095] In addition, the position adjustment portion 7 includes a moving portion 7a that can move the substrate 10 between the heating portion 5 and the infrared heater 6, so that by moving the substrate 10 between the heating portion 5 and the infrared heater 6, the In a state where at least one of the heating unit 5 and the infrared heater 6 is arranged at a fixed position, the heating temperature of the substrate 10 can be adjusted. Therefore, there is no need to separately provide a device capable of moving at least one of the heating unit 5 and the infrared heater 6, and therefore, the heating temperature of the substrate 10 can be adjusted with a simple configuration. [0096] In addition, between the heating section 5 and the infrared heater 6, a transport section 8 capable of transporting the substrate 10 is provided, and a passage section 8h through which the moving section 7a can pass is formed in the transport section 8, so as to achieve the following Effect. When the substrate 10 is moved between the heating section 5 and the infrared heater 6, since the substrate 10 can be passed through the passage section 8h, it is not necessary to move the substrate 10 by bypassing the transport section 8. Therefore, there is no need to separately provide a device for moving the substrate 10 around the conveying portion 8, and the substrate 10 can be moved smoothly with a simple configuration. [0097] In addition, the heating unit 5 is an electric heating plate, so that the heating temperature of the substrate 10 can be made uniform within the surface of the substrate 10, and therefore the film characteristics can be improved. For example, by heating the substrate 10 in a state where the one surface of the electric heating plate is in contact with the second surface 10b of the substrate 10, the in-plane uniformity of the heating temperature of the substrate 10 can be improved. [0098] In addition, a temperature detection unit 9 capable of detecting the temperature of the substrate 10 is further included, so that the temperature of the substrate 10 can be grasped in real time. For example, by heating the substrate 10 based on the detection result of the temperature detection unit 9, it is possible to suppress the temperature of the substrate 10 from deviating from the target value. [0099] In addition, it also includes a recovery unit 11 capable of recovering the solvent volatilized from the polyimide forming liquid coated on the substrate 10, thereby preventing the solvent volatilized from the polyimide forming liquid from being discharged to the factory side. In addition, when the recovery part 11 is connected to the pipeline of the decompression part 3 (vacuum pump 13), it is possible to prevent the solvent volatilized from the polyimide formation liquid from being liquefied again and flowing back into the vacuum pump 13. Furthermore, the solvent volatilized from the polyimide formation liquid can be reused as a cleaning liquid. For example, the cleaning liquid can be used for cleaning the tip of the nozzle, cleaning the liquid attached to the scraping member that scrapes the liquid attached to the nozzle, or the like. [0100] In addition, the infrared heater 6 is arranged on one side of the first surface 10a of the substrate 10, whereby the heat generated from the infrared heater 6 is transferred from the side of the first surface 10a of the substrate 10 to the second surface 10b. As a result, the heating of the heating unit 5 and the heating of the infrared heater 6 complement each other, so that the substrate 10 can be heated more effectively. [0101] In addition, by infrared heating by the infrared heater 6, the substrate 10 can be heated to the second temperature in a short time. In addition, since the substrate 10 can be heated (so-called non-contact heating) in a state where the infrared heater 6 is separated from the substrate 10, the substrate 10 can be kept clean (so-called cleaning heating). [0102] In addition, since the peak wavelength range of the infrared heater is a range of 1.5 μm or more and 4 μm or less, and the wavelength of the range of 1.5 μm or more and 4 μm or less coincides with the absorption wavelength of glass, water, etc., it can heat more efficiently The substrate 10 and the polyimide forming liquid applied on the substrate 10. [0103] In addition, a swing portion 12 capable of swinging the substrate 10 is further included, so that the substrate 10 can be heated while swinging the substrate 10, so that the temperature uniformity of the substrate 10 can be improved. [0104] (First Modification Example) Next, a first modification example of the first embodiment will be described using FIG. 7. Fig. 7 is a plan view showing a first modification of the infrared heater of the first embodiment. In the first modification, the shape of the infrared heater is particularly different from that of the first embodiment. In FIG. 7, the same reference numerals are given to the same configurations as those of the first embodiment, and detailed descriptions thereof are omitted. [0105] <Infrared Heater> As shown in FIG. 7, the length and total length of one side of the outer shape of the infrared heater 6A of this modification example are shorter than the length of the infrared heater 6 (see FIG. 2) of the first embodiment. For example, the length of one side of the outer shape of the infrared heater 6A is approximately 210 mm. For example, the total length of the infrared heater 6A is about 1890 mm. [0106] A plurality of straight portions 30a to 30g are arranged side by side in the second direction V2 (for example, seven in this modification). The interval S1 between the two adjacent straight portions 30a to 30g in this modification example is larger than the interval S1 between the two adjacent straight portions 30a to 30i in the first embodiment. For example, the interval S1 between two adjacent straight portions 30a to 30g in this modification example is about 30 mm. [0107] The cover portions 32 and 33 linearly extend in the second direction V2 so as to cover a plurality of (for example, six in this modification) curved portions 31a to 31f from the outside. Specifically, the cover portions 32 and 33 are provided with: a first cover portion 32 that covers the three curved portions 31b, 31d, and 31f from one side of the first direction V1; and a second cover portion 33 that covers the other portion from one side of the first direction V1 The side covers three curved portions 31a, 31c, and 31e. [0108] The interval S2 between the first cover portion 32 and the curved portions 31b, 31d, and 31f and the interval S1 between the two adjacent straight portions 30a to 30g are substantially the same size. The interval between the first cover portion 32 and the curved portions 31b, 31d, and 31f is, for example, about 30 mm. [0109] The interval S3 between the second cover portion 33 and the curved portions 31a, 31c, and 31e and the interval S1 between the two adjacent straight portions 30a to 30g are substantially the same size. The interval between the lid main body 33a and the curved portions 31a, 31c, and 31e in the second lid portion 33 is, for example, about 30 mm. In addition, the interval between the extension portion 33b and the straight portion 30a in the second cover portion 33 is also about 30 mm. [0110] As described above, according to this modified example, by making the length and total length of one side of the outer shape of the infrared heater 6A shorter than the length of the infrared heater 6 of the first embodiment, it is possible to reduce the weight of the infrared heater 6A. And lightweight. In addition, the infrared heater 6A of the present modification can be used as an infrared heater for low temperature (for example, a heating temperature of 350° C. to 400° C.) without any problem, and therefore, it is possible to achieve cost reduction. [0111] (Second Modification Example) Next, a second modification example of the first embodiment will be described using FIG. 8. Fig. 8 is a plan view showing a second modification of the infrared heater of the first embodiment. In the second modification, the shape of the infrared heater is particularly different from that of the first modification. In FIG. 8, the same reference numerals are given to the same configurations as the first modification example, and detailed descriptions thereof are omitted. [0112] <Infrared Heater> As shown in FIG. 8, the entire length of the infrared heater 6B of this modification example is longer than the length of the infrared heater 6A (refer to FIG. 7) of the first modification example. For example, the total length of the infrared heater 6B is about 2070 mm. In addition, the length of one side of the outer shape of the infrared heater 6B is approximately 210 mm. [0113] The interval between the first cover portion 32 and the curved portions 31b, 31d, and 31f is smaller than the interval S1 between the two adjacent straight portions 30a to 30g. The interval between the first cover portion 32 and the bent portions 31b, 31d, and 31f is, for example, about 15 mm. [0114] The interval between the second cover portion 33 and the curved portions 31a, 31c, and 31e is smaller than the interval S1 between the two adjacent straight portions 30a to 30g. The interval S3 between the lid main body 33a and the curved portions 31a, 31c, and 31e in the second lid portion 33 is, for example, about 15 mm. In addition, the interval between the extension portion 33b and the straight portion 30a in the second cover portion 33 is about 30 mm. [0115] As described above, according to this modified example, by making the intervals S2, S3 between the cover portions 32, 33 and the curved portions 31a to 31f smaller than the interval S1 between the two adjacent straight portions 30a to 30g, Play the following effects. Compared with the case where the intervals S2 and S3 between the lid portions 32, 33 and the curved portions 31a to 31f are equal to or greater than the interval S1 between the two adjacent straight portions 30a to 30g, the curved portions 31a to 31a can be avoided more reliably. The exposure of 31f can more reliably suppress the temperature drop of the bent portions 31a to 31f compared with other portions. That is, since at least a part of the curved parts 31a to 31f can be heated more reliably from the outside by the cover parts 32 and 33, the temperature difference between the curved parts 31a to 31f and other parts can be suppressed more reliably. Therefore, the balance of the temperature distribution of the infrared heater 6B can be improved more reliably. [0116] (Second Embodiment) Next, a second embodiment of the present invention will be described using FIGS. 9 to 12. Fig. 9 is a plan view of an infrared heater 206 according to the second embodiment. In the second embodiment, the shape of the infrared heater is particularly different from that of the first embodiment. In FIG. 9, the same reference numerals are given to the same configurations as those of the first embodiment, and detailed descriptions thereof are omitted. [0117] <Infrared Heater> As shown in FIG. 9, in a plan view, the outer shape of the infrared heater 206 is a rectangular shape. The infrared heater 206 has a point-symmetrical shape (axisymmetrical shape) in a plan view. [0118] The first cover portion 32 is connected to one end portion of the straight portion 30a on one side in the second direction V2. The first cover portion 32 has a straight tube shape having a long side in the second direction V2. The second cover portion 233 is connected to one end portion of the straight portion 30i on the other side in the second direction V2. The second cover part 233 has a straight tube shape having a long side in the second direction V2. [0119] The first introduction part 34 is arranged at a corner of the infrared heater 206. Specifically, the first introduction portion 34 is provided at one end of the first cover portion 32. The second introduction part 35 is arranged at the opposite corner of the one corner. Specifically, the second introduction part 35 is provided at one end of the second cover part 233. That is, in the first direction V1 and the second direction V2, the second introduction part 35 is arranged on the opposite side of the first introduction part 34. 10 is a diagram for explaining an example of the operation of the substrate heating device 201 of the second embodiment. FIG. 11 is an operation explanatory diagram of the substrate heating device 201 of the second embodiment following FIG. 10. FIG. 12 is an operation explanatory diagram of the substrate heating device 201 of the second embodiment following FIG. 11. For convenience, in FIGS. 10 to 12, among the constituent elements of the substrate heating device 201, the decompression section 3, gas supply section 4, transport section 8, temperature detection section 9, recovery section 11, swing section 12, and An illustration of the control unit 15. [0121] In the second embodiment, the configuration of the position adjustment portion 207 is particularly different from that of the first embodiment. In FIGS. 10 to 12, the same reference numerals are given to the same configurations as those of the first embodiment, and detailed descriptions thereof are omitted. [0122] <Position Adjustment Unit> As shown in FIG. 10, the position adjustment unit 207 includes an accommodation unit 270, a moving unit 275, and a driving unit 279. The accommodating part 270 is arranged on the lower side of the chamber 2. The accommodating part 270 can accommodate the moving part 275 and the driving part 279. The accommodating part 270 is formed in a rectangular parallelepiped box shape. Specifically, the accommodating portion 270 is formed by the following members: a rectangular plate-shaped first supporting plate 271; a rectangular plate-shaped second supporting plate 272 facing the first supporting plate 271; an enclosing plate 273 and the first supporting plate The outer peripheral edges of the 271 and the second support plate 272 are connected, and cover the moving part 275 and the driving part 279 so as to surround the surroundings of the moving part 275 and the driving part 279. In addition, the surrounding plate 273 may not be provided. That is, the position adjustment part 207 may include at least the first support plate 271, the moving part 275, and the driving part 279. For example, an exterior cover that surrounds the entire device may be provided. [0123] The outer peripheral edge of the first support plate 271 is connected to the lower end of the peripheral wall 23 of the chamber 2. The first support plate 271 also functions as a bottom plate of the chamber 2. The heating unit 205 is arranged on the first support plate 271. Specifically, the heating part 205 is supported by the first support plate 271 in the chamber 2. [0124] The surrounding plate 273 and the peripheral wall 23 are continuously connected up and down. The chamber 2 is configured to be able to accommodate the substrate 10 in the sealed space. For example, by joining the top plate 21, the first support plate 271 as the bottom plate, and the connecting portions of the peripheral wall 23 without gaps by welding or the like, the airtightness in the chamber 2 can be improved. [0125] The moving part 275 includes a pin 276, a telescopic tube 277, and a base 278. The pin 276 can support the second surface 10b of the substrate 10 and can move in the normal direction (Z direction) of the second surface 10b. The pin 276 is a rod-shaped member extending up and down. The front end (upper end) of the pin 276 can abut against the second surface 10 b of the substrate 10 and can be away from the second surface 10 b of the substrate 10. [0126] A plurality of pins 276 are provided at intervals in a direction (X direction and Y direction) parallel to the second surface 10b. The plurality of pins 276 are respectively formed to have substantially the same length. The tips of the plurality of pins 276 are arranged in a plane parallel to the second surface 10b (in the XY plane). [0127] The telescopic tube 277 is provided between the first support plate 271 and the base 278. The telescopic tube 277 is a tubular member that covers the periphery of the pin 276 and extends up and down. The telescopic tube 277 can expand and contract freely between the first support plate 271 and the base 278. The telescopic tube 277 is, for example, a vacuum bellows. [0128] A plurality of telescopic tubes 277 are provided, which is the same as the number of the plurality of pins 276. The front ends (upper ends) of the plurality of telescopic tubes 277 are fixed to the first support plate 271. Specifically, the first support plate 271 is formed with a plurality of insertion holes 271h that open the first support plate 271 in the thickness direction. The inner diameter of each insertion hole 271h is approximately the same size as the outer diameter of each telescopic tube 277. The tip of each telescopic tube 277 is fitted and fixed to each insertion hole 271h of the first support plate 271, for example. [0129] The base 278 is a plate-shaped member opposed to the first support plate 271. The upper surface of the base 278 is a flat surface along the second surface 10 b of the substrate 10. The base ends (lower ends) of the plurality of pins 276 and the base ends (lower ends) of the plurality of telescopic tubes 277 are fixed to the upper surface of the base 278. [0130] The tips of the plurality of pins 276 can be inserted through the heating part 205. In the heating portion 205, a position overlapping with each insertion hole 271h (inner space of each telescopic tube 277) of the first support plate 271 in the normal direction of the second surface 10b is formed so that the heating portion 205 is positioned in the second A plurality of insertion holes 205h opened in the normal direction of the surface 10b (the thickness direction of the heating plate). [0131] The tips of the plurality of pins 276 can abut against the second surface 10b of the substrate 10 via the internal space of each telescopic tube 277 and each insertion hole 205h of the heating part 205. Therefore, the front ends of the plurality of pins 276 can support the substrate 10 in parallel to the XY plane. The plurality of pins 276 move in the Z direction in the chamber 2 while supporting the substrate 10 housed in the chamber 2 (refer to FIGS. 10 to 12 ). [0132] The driving unit 279 is arranged outside the chamber 2, that is, in the accommodating portion 270. Therefore, even if it is assumed that fine dust is generated as the driving part 279 is driven, by making the inside of the chamber 2 a closed space, it is possible to prevent the fine dust from intruding into the chamber 2. [0133] <Substrate Heating Method> Next, the substrate heating method of the present embodiment will be described. In this embodiment, the substrate 10 is heated using the substrate heating device 201 described above. The operations performed by the components of the substrate heating device 201 are controlled by the control unit 15. In addition, the detailed description of the same process as that of the first embodiment is omitted. [0134] The substrate heating method of this embodiment includes a pressure reduction process, a first heating process, and a second heating process. In the pressure reduction process, the substrate 10 coated with the polyimide formation liquid is pressure-reduced. As shown in FIG. 10, in the decompression process, the substrate 10 is away from the heating part 205. Specifically, the tips of the plurality of pins 276 are brought into contact with the second surface 10b of the substrate 10 via the internal space of each telescopic tube 277 and each insertion hole 205h of the heating part 205, and the substrate 10 is raised, thereby causing The substrate 10 is far away from the heating part 205. In the decompression process, the heating portion 205 and the substrate 10 are far away from the heating portion 205 to the extent that the heat of the heating portion 205 is not transferred to the substrate 10. In the decompression process, the power of the heating unit 205 is turned on. The temperature of the heating part 205 is about 250 degreeC, for example. On the other hand, in the decompression process, the power supply of the infrared heater 206 is turned off. [0135] After the pressure reduction process, in the first heating process, the substrate 10 is heated at the temperature of the heating portion 205. As shown in FIG. 11, in the first heating process, the front ends of the plurality of pins 276 are moved away from the second surface 10 b of the substrate 10 so that the substrate 10 is brought into contact with the heating portion 205. That is, the substrate 10 is placed on the upper surface of the heating unit 205. Thus, because the heating portion 205 abuts the second surface 10 b of the substrate 10, the heat of the heating portion 5 is directly transferred to the substrate 10. The temperature of the heating part 205 is maintained at 250 degreeC in the 1st heating process, for example. Therefore, the substrate temperature can rise to 250°C. On the other hand, in the first heating process, the power supply of the infrared heater 206 is always in an off state. [0136] After the first heating process, in the second heating process, the substrate 10 is heated at the second temperature. As shown in FIG. 12, in the second heating process, the substrate 10 is moved closer to the infrared heater 206 by raising the substrate 10 to a position higher than the position during the first heating process. For example, in the second heating process, the temperature of the heating part 205 is maintained at 250°C. In addition, in the second heating process, the power of the infrared heater 206 is turned on. For example, the infrared heater 206 can heat the substrate 10 at 450°C. Therefore, the substrate temperature can rise to 450°C. In the second heating process, the substrate 10 is closer to the infrared heater 206 than in the first heating process, so the heat of the infrared heater 206 is sufficiently transferred to the substrate 10. [0137] After that, through the same process as in the first embodiment, the polyimide forming liquid coated on the substrate 10 is volatilized or imidized, and the polyimide forming liquid coated on the substrate 10 is performed. The rearrangement of the molecular chain during the imidization of the polyimide can form a polyimide film. [0138] As described above, according to this embodiment, in a plan view, the outer shape of the infrared heater 206 is rectangular, the first introduction part 34 is arranged at a corner of the infrared heater 206, and the second introduction part 35 is arranged at the corner of the infrared heater 206. The diagonal portion of the one corner, therefore, in a plan view, the arrangement positions of the first introduction portion 34 and the second introduction portion 35 are point symmetrical with respect to the center of the infrared heater 206, and the first introduction portion 34 and the second introduction part 35 are far away. Therefore, even when the temperature of the first introduction part 34 and the second introduction part 35 is lowered compared with other parts, the mutual cooling temperature will not be lowered, so that the infrared heater 206 can be prevented from being locally excessively cooled, and therefore can be minimized. It is possible to improve the balance of the temperature distribution of the infrared heater 206. [0139] In addition, in a plan view, the infrared heater 206 has a point symmetrical shape, so compared with the case where the infrared heater 206 is an asymmetric shape in a plan view, the infrared heater 206 can be more reliably improved. The balance of temperature distribution. [0140] In addition, the moving part 275 includes a plurality of pins 276 that can support the second surface 10b of the substrate 10 and that can move in the normal direction of the second surface 10b. The surface 10b is in a plane parallel to each other, so as to achieve the following effects. Since the substrate 10 can be heated in a state where the substrate 10 is stably supported, the polyimide forming liquid applied on the substrate 10 can be stably formed into a film. [0141] In addition, the heating portion 205 is formed with a plurality of insertion holes 205h that open the heating portion 205 in the normal direction of the second surface 10b, and the tip of each pin 276 can abut the first through hole 205h. The two surfaces 10b have the following effects. The transfer of the substrate 10 between the plurality of pins 276 and the heating portion 205 can be performed in a short time, and therefore the heating temperature of the substrate 10 can be efficiently adjusted. [0142] (Third Embodiment) Next, a third embodiment of the present invention will be described using FIG. 13. FIG. 13 is a plan view of an infrared heater 306 according to the third embodiment. In the third embodiment, the shape of the infrared heater is particularly different from that of the first embodiment. In FIG. 13, the same reference numerals are given to the same configurations as those of the first embodiment, and detailed descriptions thereof are omitted. [0143] <Infrared Heater> As shown in FIG. 13, in a plan view, the outer shape of the infrared heater 306 is rectangular. The first cover portion 32 is connected to one end portion of the straight portion 30a on one side in the second direction V2. The first cover portion 32 has a straight tube shape having a long side in the second direction V2. The second cover portion 333 is connected to one end portion of the straight portion 30i on the other side in the second direction V2. The second cover 333 has a U-shaped tubular shape. That is, the second cover portion 333 includes: a cover body 333a having a long side in the second direction V2; a first extension portion 333b connected to one end of the cover body 333a and having a long side in the first direction V1; The two extension portions 333c are connected to one end of the first extension portion 333b, and have a long side in the second direction V2 so as to cover the first cover portion 32 from the outside. In addition, the interval S3 between the cover body 333a in the second cover portion 333 and the bent portions 31a, 31c, 31e, 31g and the interval between the second extension portion 333c in the second cover portion 333 and the first cover portion 32 S4 is substantially the same size. [0144] The first introduction portion 34 and the second introduction portion 35 are arranged adjacent to one corner of the infrared heater 306. In the first direction V1, the first introduction portion 34 is arranged on the inner side than the second introduction portion 35. That is, the first introduction portion 34 is arranged between the curved portion 31h and the second introduction portion 35. [0145] As described above, according to the present embodiment, in a plan view, the outer shape of the infrared heater 306 is rectangular, and the first introduction portion 34 and the second introduction portion 35 are adjacently arranged at one corner of the infrared heater 306 As a result, the distance between the first introduction portion 34 and the second introduction portion 35 is minimized, so that the thermal expansion or thermal contraction of the infrared heater 306 can be kept as long as possible. [0146] (Fourth Embodiment) Next, a fourth embodiment of the present invention will be described using FIG. 14. FIG. 14 is a plan view of a heater unit 560 of the fourth embodiment. In the fourth embodiment, the arrangement scheme of the infrared heater is particularly different from the first embodiment. In FIG. 14, the same reference numerals are given to the same configurations as those of the first embodiment, and detailed descriptions thereof are omitted. [0147] <Heater Unit> As shown in FIG. 14, the substrate heating device of the present embodiment includes a heater unit 560 that is heated by laying a plurality of (for example, 11 in this embodiment) infrared rays.器6 is formed. The heater unit 560 includes a first infrared heater group 561, a second infrared heater group 562, and a third infrared heater group 563. [0148] The first infrared heater group 561 includes a plurality of (for example, four in this embodiment) first infrared heaters 561a to 561d. The plurality of first infrared heaters 561a to 561d are laid and arranged in the first direction V1 (one direction). In addition, the first infrared heaters 561a, 561b, 561c, and 561d are arranged in this order from one side to the other side in the first direction V1. [0149] The second infrared heater group 562 includes a plurality of (for example, three in this embodiment) second infrared heaters 562a to 562c. The plurality of second infrared heaters 562a to 562c are laid and arranged in a direction parallel to the first direction V1. In addition, the second infrared heaters 562a, 562b, and 562c are arranged in this order from one side in a direction parallel to the first direction V1 to the other side. [0150] The third infrared heater group 563 includes a plurality of (for example, four in this embodiment) third infrared heaters 563a to 563d. The plurality of third infrared heaters 563a to 563d are laid and arranged in a direction parallel to the first direction V1. In addition, the third infrared heaters 563a, 563b, 563c, and 563d are arranged in this order from one side in a direction parallel to the first direction V1 to the other side. [0151] The second infrared heaters 562a to 562c are located in the second direction V2 (the direction intersecting the one direction) so as to be adjacent to the boundary portion of the two adjacent first infrared heaters 561a to 561d It is laid and arranged with the first infrared heaters 561a to 561d. Furthermore, the second infrared heaters 562a to 562c are adjacent to the boundary of the two adjacent third infrared heaters 563a to 563d in the second direction V2, and are aligned with the third infrared heaters in the second direction V2. The heaters 563a to 563d are laid and arranged. That is, the second infrared heaters 562a to 562c are arranged in the second direction V2 so as to be sandwiched between two adjacent first infrared heaters 561a to 561d and two adjacent third infrared heaters 563a to 563a. Between the borders of 563d. [0152] In a plan view, the second infrared heaters 562a to 562c have the same shape as the first infrared heaters 561a to 561d and the third infrared heaters 563a to 563d. In addition, the first infrared heaters 561a to 561d, the second infrared heaters 562a to 562c, and the third infrared heaters 563a to 563d correspond to the infrared heater 6 of the first embodiment. [0153] As described above, according to the present embodiment, the heater unit 560 is provided, and the heater unit 560 is configured to lay a plurality of infrared heaters 6 on one surface, thereby achieving the following effects. Since the infrared heater 6 described above is provided, the balance of the temperature distribution of the heater unit 560 can be improved. In addition, when a plurality of infrared heaters 6 can be individually controlled, the output of some of the infrared heaters 6 can be made larger than the output of the other infrared heaters 6, so that a good temperature distribution with respect to the substrate 10 can be achieved. heating. For example, when the temperature of the four corners of the substrate 10 is low, the output of the infrared heater 6 arranged at the position corresponding to the part is made larger than the output of the other infrared heaters 6, thereby increasing only the temperature of the part. As a result, the temperature distribution of the entire substrate 10 can be improved. [0154] In addition, the heater unit 560 includes: a plurality of first infrared heaters 561a to 561d arranged along the first direction V1; and a plurality of second infrared heaters 562a to 562c arranged in parallel with the first direction V1 The second infrared heaters 562a to 562c are arranged so as to be adjacent to the boundary of the two adjacent first infrared heaters 561a to 561d, and are arranged in a second direction V2 that intersects the first direction V1. The first infrared heaters 561a to 561d are laid down and arranged to achieve the following effects. Since the temperature distribution of the first infrared heaters 561a to 561d and the temperature distribution of the second infrared heaters 562a to 562c can complement each other, the balance of the temperature distribution of the heater unit 560 can be further improved. Furthermore, in the second direction V2, the second infrared heaters 562a to 562c and the third infrared heaters 563a to 563d are laid so that the second infrared heaters 562a to 562c are adjacent to the two adjacent third infrared heaters. The borders of 563a to 563d are adjacent to each other. Since the temperature distribution of the third infrared heaters 563a to 563d and the temperature distribution of the second infrared heaters 562a to 562c can complement each other, the balance of the temperature distribution of the heater unit 560 can be further improved. [0155] In addition, in a plan view, the second infrared heaters 562a to 562c have the same shape as the first infrared heaters 561a to 561d and the third infrared heaters 563a to 563d, thereby achieving the following effects. Compared with the case where the second infrared heaters 562a to 562c have different shapes from the first infrared heaters 561a to 561d and the third infrared heaters 563a to 563d in a plan view, the temperature of the heater unit 560 can be increased more reliably The balance of distribution. In addition, even if the substrate size is changed, the number of infrared heaters 6 can be changed, and the infrared heaters 6 can be arranged at equal intervals, so that the substrate 10 can be heated with a good temperature distribution. However, when the infrared heater is a simple straight tube, if the size of the substrate increases, the length of the straight tube needs to be extended. Therefore, there is a possibility that it is difficult to tolerate the thermal expansion of the infrared heater. However, according to the configuration of the present embodiment, even if the size of the substrate becomes larger, the size of the infrared heater 6 does not change, so the thermal expansion of the infrared heater 6 can be easily tolerated. [0156] (Fifth Embodiment) Next, a fifth embodiment of the present invention will be described using FIG. 15. FIG. 15 is a plan view of a heater unit 660 of the fifth embodiment. In the fifth embodiment, the arrangement scheme of the infrared heater is particularly different from the fourth embodiment. In FIG. 15, the same reference numerals are given to the same configurations as in the fourth embodiment, and detailed descriptions thereof are omitted. [0157] <Heater Unit> As shown in FIG. 15, the heater unit 660 of this embodiment includes a first infrared heater group 561, a second infrared heater group 662, and a third infrared heater group 563. [0158] In a plan view, the second infrared heaters 662a to 662c have a shape obtained by rotating the first infrared heaters 561a to 561d or the third infrared heaters 563a to 563d by 90 degrees. Specifically, in a plan view, the second infrared heaters 662a to 662c have the first infrared heaters 561a to 561d or the third infrared heaters 563a to 563d to rotate 90 to the right (clockwise) starting from the center of the second infrared heaters 662a to 662c. The shape after the degree. In addition, the first infrared heaters 561a to 561d, the second infrared heaters 662a to 662c, and the third infrared heaters 563a to 563d correspond to the infrared heater 6 of the first embodiment. [0159] As described above, according to the present embodiment, in a plan view, the second infrared heaters 662a to 662c have a shape obtained by rotating the first infrared heaters 561a to 561d or the third infrared heaters 563a to 563d by 90 degrees. Therefore, the first infrared heaters 561a to 561d, the second infrared heaters 662a to 662c, and the third infrared heaters 563a to 563d can complement each other for the temperature distribution caused by the shape of the infrared heater 6, so it can be more The balance of the temperature distribution of the heater unit 660 is further improved. [0160] In addition, the shapes or combinations of the constituent members shown in the above-mentioned examples are just examples, and various changes can be made based on design requirements and the like. In addition, although the substrate, the heating unit, and the infrared heater are housed in a common chamber in the above-mentioned embodiment, the present invention is not limited to this. For example, the heating unit and the infrared heater may be housed in different chambers. [0161] In addition, in the above-mentioned embodiment, both the heating unit and the infrared heater can heat the substrate step by step, but the present invention is not limited to this. For example, at least one of the heating unit and the infrared heater may be able to heat the substrate step by step. In addition, both the heating unit and the infrared heater may only heat the substrate at a constant temperature. [0162] In addition, the inner wall of the chamber may be capable of reflecting infrared rays in the above-mentioned embodiment. For example, the inner wall of the cavity may be a mirror surface (reflection surface) formed of metal such as aluminum. As a result, the temperature uniformity in the chamber can be improved compared to a material that enables the inner wall of the chamber to absorb infrared rays. [0163] In addition, although in the above-mentioned embodiment, a plurality of conveying rollers are used as the conveying portion, the present invention is not limited to this. For example, as the conveying unit, a conveyor belt may be used, or a linear motor actuator may be used. For example, it is also possible to add a conveyor belt and a linear motor actuator in the X direction. Thereby, the conveyance distance of the substrate in the X direction can be adjusted. [0164] In addition, when a structure other than the structure shown in FIG. 3 (a structure in which a passage portion is formed in the conveying portion) is used as the conveying portion, the size of the heating portion in a plan view may be greater than or equal to the size of the substrate. The size when viewed from above. This makes it possible to further improve the in-plane uniformity of the heating temperature of the substrate compared to the case where the size of the heating portion in the plan view state is smaller than the size of the substrate in the plan view state. [0165] In addition, in the above-mentioned embodiment, in the decompression process and the first heating process, the power supply of the heating unit is turned on and the power supply of the infrared heater is turned off, but the present invention is not limited to this. For example, in the pressure reduction process and the first heating process, the heating unit and the infrared heater may be powered on. [0166] In addition, in the above-mentioned embodiment, the outer shape of the infrared heater may be rectangular in a plan view, and the first introduction part and the second introduction part may be arranged to face each other at the central part of one side of the infrared heater. According to this structure, since the first introduction part and the second introduction part are separated to some extent, it is possible to prevent the infrared heater from locally lowering the temperature. Therefore, the balance of the temperature distribution of the infrared heater can be improved. [0167] In addition, each of the constituent elements described as the above-mentioned embodiment or its modification can be appropriately combined within a range that does not depart from the spirit of the present invention, and may also be among a plurality of constituent elements obtained by the combination. , And do not use part of the constituent elements as appropriate. [0168] (Examples) Hereinafter, the present invention will be described in more detail through examples, but the present invention is not limited by the following examples. [0169] The inventors of the present invention confirmed through the following evaluations that the infrared heater can improve the balance of the temperature distribution of the infrared heater by including the cover portion arranged so as to cover the curved portion from the outside. [0170] (Comparative Example) In the infrared heater of the comparative example, an infrared heater having only a straight portion and a curved portion was used. That is, in the comparative example, the cover part is not provided. [0171] (Example) The infrared heater of the example uses an infrared heater having a straight portion, a curved portion, and a cover portion. That is, with respect to the comparative example, the infrared heater of the example further includes a cover. In addition, the infrared heater of the example corresponds to the infrared heater 6 of the first embodiment (refer to FIG. 2). [0172] (Evaluation Conditions) Hereinafter, the evaluation conditions of the temperature distribution of the substrate when heated by an infrared heater in Comparative Examples and Examples will be described. Use a glass substrate as the substrate. The substrate is arranged directly under the infrared heater. The temperature of the substrate is 450°C. In the substrate, the temperature (hereinafter referred to as the “straight portion temperature”) of the portion corresponding to the center portion in the longitudinal direction of the straight portion (that is, the portion overlapping in the normal direction of the substrate) is measured. In addition, in the substrate, the temperature of the portion corresponding to the curved portion (that is, the portion overlapping in the normal direction of the substrate) (hereinafter referred to as “curved portion temperature”) is measured. Then, the temperature difference between the straight portion and the curved portion (hereinafter referred to as "temperature difference") is calculated. [0173] (Evaluation results of the temperature distribution of the substrate when heated by an infrared heater) In the case of the comparative example, the curved portion is darker than the straight portion. It can be seen that the temperature of the curved part is lower than that of the straight part. In the case of the comparative example, the temperature difference is 5.8°C. [0174] In the case of the embodiment, the curved portion is darker than the straight portion. However, the curved portion of the example is brighter than the curved portion of the comparative example. From this, it can be seen that even though the temperature of the bent portion is lower than the temperature of the straight portion in the example, the degree of decrease is smaller than that of the comparative example. In the case of the examples, the temperature difference is 2.4°C. As described above, it is possible to improve the balance of the temperature distribution of the infrared heater by including the cover portion arranged to cover the curved portion from the outside of the infrared heater. In addition, it can be seen that the temperature distribution of the substrate can be improved.

[0175]1、201‧‧‧基板加熱裝置2‧‧‧腔室3‧‧‧減壓部5、205‧‧‧加熱部5a‧‧‧載置面6、6A、6B、206、306‧‧‧紅外線加熱器7、207‧‧‧位置調整部7a、275‧‧‧移動部8‧‧‧輸送部8h‧‧‧通過部9‧‧‧溫度檢測部10‧‧‧基板10a‧‧‧第一表面10b‧‧‧第二表面11‧‧‧回收部30a、30b、30c、30d、30e、30f、30g、30h、30i‧‧‧直部31a、31b、31c、31d、31e、31f、31g、31h‧‧‧彎曲部32‧‧‧第一蓋部(蓋部)33、233、333‧‧‧第二蓋部(蓋部)34‧‧‧第一導入部35‧‧‧第二導入部205h‧‧‧插通孔276‧‧‧銷560、660‧‧‧加熱器單元561a、561b、561c、561d‧‧‧第一紅外線加熱器562a、562b、562c、662a、662b、662c‧‧‧第二紅外線加熱器S1‧‧‧相鄰的2個直部之間的間隔S2、S3‧‧‧蓋部與彎曲部之間的間隔V1‧‧‧第一方向V2‧‧‧第二方向[0175]1, 201‧‧‧Substrate heating device 2‧‧‧ Chamber 3‧‧‧Reducing part 5, 205‧‧‧ Heating part 5a‧‧‧Mounting surface 6, 6A, 6B, 206, 306‧ ‧‧Infrared heater 7, 207‧‧‧Position adjustment part 7a, 275‧‧‧Moving part 8‧‧‧Conveying part 8h‧‧‧Passing part 9‧‧‧Temperature detection part 10‧‧‧Substrate 10a‧‧‧ First surface 10b‧‧‧Second surface 11‧‧‧Recycling parts 30a, 30b, 30c, 30d, 30e, 30f, 30g, 30h, 30i‧‧Straight parts 31a, 31b, 31c, 31d, 31e, 31f, 31g、31h‧‧‧Bending part 32‧‧‧First cover part (cover part) 33,233,333‧‧‧Second cover part (cover part) 34‧‧‧First introduction part 35‧‧‧Second Introductory part 205h‧‧‧Insert hole 276‧‧‧Pin 560, 660‧‧‧ Heater unit 561a, 561b, 561c, 561d‧‧‧ First infrared heater 562a, 562b, 562c, 662a, 662b, 662c‧ ‧‧Second infrared heater S1‧‧‧Space between two adjacent straight parts S2, S3‧‧‧Space between cover part and curved part V1‧‧‧First direction V2‧‧‧Second direction

[0039] 圖1是第一實施方式的基板加熱裝置的立體圖。   圖2是示出第一實施方式的紅外線加熱器的俯視圖。   圖3是用於說明輸送輥、基板以及加熱部的配置關係的圖。   圖4是用於說明第一實施方式的基板加熱裝置的動作的一例的圖。   圖5是後續圖4的、第一實施方式的基板加熱裝置的動作說明圖。   圖6是後續圖5的、第一實施方式的基板加熱裝置的動作說明圖。   圖7是示出第一實施方式的紅外線加熱器的第一變形例的俯視圖。   圖8是示出第一實施方式的紅外線加熱器的第二變形例的俯視圖。   圖9是第二實施方式的紅外線加熱器的俯視圖。   圖10是用於說明第二實施方式的基板加熱裝置的動作的一例的圖。   圖11是後續圖10的、第二實施方式的基板加熱裝置的動作說明圖。   圖12是後續圖11的、第二實施方式的基板加熱裝置的動作說明圖。   圖13是第三實施方式的紅外線加熱器的俯視圖。   圖14是第四實施方式的加熱器單元的俯視圖。   圖15是第五實施方式的加熱器單元的俯視圖。[0039] FIG. 1 is a perspective view of a substrate heating device according to a first embodiment.   FIG. 2 is a plan view showing the infrared heater of the first embodiment.   FIG. 3 is a diagram for explaining the arrangement relationship of the conveying roller, the substrate, and the heating unit.   FIG. 4 is a diagram for explaining an example of the operation of the substrate heating device of the first embodiment.   FIG. 5 is an operation explanatory diagram of the substrate heating device of the first embodiment following FIG. 4.   FIG. 6 is an operation explanatory diagram of the substrate heating device of the first embodiment following FIG. 5.   FIG. 7 is a plan view showing a first modification of the infrared heater of the first embodiment.   FIG. 8 is a plan view showing a second modification of the infrared heater of the first embodiment.   FIG. 9 is a plan view of the infrared heater of the second embodiment.   FIG. 10 is a diagram for explaining an example of the operation of the substrate heating device of the second embodiment.   FIG. 11 is an operation explanatory diagram of the substrate heating device of the second embodiment following FIG. 10.   FIG. 12 is an operation explanatory diagram of the substrate heating device of the second embodiment following FIG. 11.   FIG. 13 is a plan view of the infrared heater of the third embodiment.   FIG. 14 is a plan view of the heater unit of the fourth embodiment.   FIG. 15 is a plan view of the heater unit of the fifth embodiment.

1‧‧‧基板加熱裝置 1‧‧‧Substrate heating device

2‧‧‧腔室 2‧‧‧ Chamber

3‧‧‧減壓部 3‧‧‧Decompression Department

4‧‧‧氣體供給部 4‧‧‧Gas Supply Department

5‧‧‧加熱部 5‧‧‧Heating section

6‧‧‧紅外線加熱器 6‧‧‧Infrared heater

7‧‧‧位置調整部 7‧‧‧Position adjustment part

7a‧‧‧移動部 7a‧‧‧Mobile Department

7b‧‧‧驅動部 7b‧‧‧Drive

8‧‧‧輸送部 8‧‧‧Transportation Department

8a‧‧‧輸送輥 8a‧‧‧Conveying roller

8h‧‧‧通過部 8h‧‧‧Passing Department

9‧‧‧溫度檢測部 9‧‧‧Temperature detection department

10‧‧‧基板 10‧‧‧Substrate

10a‧‧‧第一表面 10a‧‧‧First surface

10b‧‧‧第二表面 10b‧‧‧Second surface

11‧‧‧回收部 11‧‧‧Recycling Department

12‧‧‧擺動部 12‧‧‧Swing part

13‧‧‧真空泵 13‧‧‧Vacuum pump

15‧‧‧控制部 15‧‧‧Control Department

21‧‧‧頂板 21‧‧‧Top plate

22‧‧‧底板 22‧‧‧Bottom plate

23‧‧‧周壁 23‧‧‧ Zhoubi

23a‧‧‧基板搬入搬出口 23a‧‧‧PCB loading and unloading exit

Claims (12)

一種基板加熱裝置,包括:減壓部,對塗布了溶液的基板的容納空間的氛圍進行減壓;及紅外線加熱器,能夠藉由紅外線加熱所述基板;所述紅外線加熱器呈在多個部位彎折的管狀,並且包括:彎曲部,以向外側凸出的方式彎折;及蓋部,配置為從外側覆蓋所述彎曲部的至少一部分;所述彎曲部係配置在第一方向的兩側,而且在與所述第一方向交叉的第二方向上並列有多個所述彎曲部,多個所述彎曲部係被所述紅外線加熱器本身的所述蓋部從所述第一方向的兩側的外側覆蓋。 A substrate heating device includes: a decompression part for reducing the atmosphere of a storage space of a substrate coated with a solution; and an infrared heater capable of heating the substrate by infrared rays; the infrared heater is located at a plurality of locations A bent tube, and includes: a bent portion that is bent so as to protrude outward; and a cover portion configured to cover at least a part of the bent portion from the outside; and the bent portion is arranged in the first direction. Side, and in a second direction that intersects the first direction, a plurality of the curved portions are arranged in parallel, and the plurality of curved portions are moved from the first direction by the cover portion of the infrared heater itself. Cover the outer sides of the sides. 如申請專利範圍第1項所述的基板加熱裝置,其中,所述紅外線加熱器還包括多個直部,所述多個直部在所述第一方向上具有長邊,並且在所述第二方向上並列配置,所述彎曲部連結相鄰的2個所述直部的端部,所述蓋部以從外側覆蓋多個所述彎曲部的方式在所述第二方向上直線狀地延伸。 The substrate heating device according to claim 1, wherein the infrared heater further includes a plurality of straight portions, the plurality of straight portions having long sides in the first direction, and in the first direction Arranged side by side in two directions, the curved portion connects the ends of two adjacent straight portions, and the cover portion is linearly arranged in the second direction so as to cover a plurality of the curved portions from the outside extend. 如申請專利範圍第1項所述的基板加熱裝置,其中,所述紅外線加熱器還包括:第一導入部,設置在所述紅外線加熱器的一端;第二導入部,設置在所述紅外線加熱器 的另一端,所述第一導入部以及所述第二導入部的至少一方設置在所述蓋部的端部。 The substrate heating device according to claim 1, wherein the infrared heater further includes: a first introduction part arranged at one end of the infrared heater; a second introduction part arranged on the infrared heater Device At the other end of the cover, at least one of the first introduction part and the second introduction part is provided at the end of the cover part. 如申請專利範圍第1項所述的基板加熱裝置,其中,還包括加熱器單元,所述加熱器單元構成為在一表面上鋪設多個所述紅外線加熱器。 The substrate heating device according to claim 1 further includes a heater unit configured to lay a plurality of the infrared heaters on one surface. 如申請專利範圍第4項所述的基板加熱裝置,其中,所述加熱器單元包括:多個第一紅外線加熱器,在一方向上鋪設配置;多個第二紅外線加熱器,在與所述一方向平行的方向上鋪設配置,所述第二紅外線加熱器以與相鄰的2個所述第一紅外線加熱器的邊界部鄰接的方式,在與所述一方向交叉的方向上與所述第一紅外線加熱器鋪設配置。 The substrate heating device according to claim 4, wherein the heater unit includes: a plurality of first infrared heaters arranged in one direction; a plurality of second infrared heaters are connected to the one The second infrared heater is laid in a direction parallel to the direction, and the second infrared heater is adjacent to the boundary portion of the two adjacent first infrared heaters, and intersects the first direction with the first infrared heater. An infrared heater laying configuration. 如申請專利範圍第5項所述的基板加熱裝置,其中,在俯視狀態下,所述第二紅外線加熱器具有與所述第一紅外線加熱器相同的形狀。 The substrate heating device according to claim 5, wherein, in a plan view, the second infrared heater has the same shape as the first infrared heater. 如申請專利範圍第1至6項中任一項所述的基板加熱裝置,其中,還包括加熱部,所述加熱部隔著所述基板配置在與所述紅外線加熱器相反的一側,並且能夠加熱所述基板。 The substrate heating device according to any one of the claims 1 to 6, further comprising a heating part arranged on the opposite side of the infrared heater with the substrate interposed therebetween, and The substrate can be heated. 如申請專利範圍第7項所述的基板加熱裝置,其中,還包括能夠容納所述基板、所述加熱部以及所述紅外線加熱器的腔室。 The substrate heating device according to claim 7 further includes a chamber capable of accommodating the substrate, the heating part, and the infrared heater. 如申請專利範圍第1至6項中任一項所述的基板加熱裝置,其中,還包括能夠檢測所述基板溫度的溫度檢測部。 The substrate heating device according to any one of the claims 1 to 6, further comprising a temperature detection unit capable of detecting the temperature of the substrate. 一種基板加熱方法,其特徵在於,包含以下工程:減壓工程,對塗布了溶液的基板的容納空間的氛圍進行減壓;加熱工程,藉由紅外線加熱所述基板,在所述加熱工程中,使用紅外線加熱器,藉由紅外線加熱所述基板,所述紅外線加熱器呈在多個部位彎折的管狀,並且包括:彎曲部,以向外側凸出的方式彎折;及蓋部,配置為從外側覆蓋所述彎曲部的至少一部分;所述彎曲部係配置在第一方向的兩側,而且在與所述第一方向交叉的第二方向上並列有多個所述彎曲部,多個所述彎曲部係被所述紅外線加熱器本身的所述蓋部從所述第一方向的兩側的外側覆蓋。 A method for heating a substrate, characterized by comprising the following processes: a decompression process, which decompresses the atmosphere of a accommodating space of a substrate coated with a solution; and a heating process, which heats the substrate by infrared rays, in the heating process, An infrared heater is used to heat the substrate by infrared rays. The infrared heater is in the shape of a tube bent at a plurality of locations, and includes: a bent portion that is bent so as to protrude outward; and a cover portion configured to Covers at least a part of the curved portion from the outside; the curved portion is arranged on both sides of the first direction, and a plurality of the curved portions are juxtaposed in a second direction intersecting the first direction, and The curved part is covered by the cover part of the infrared heater itself from the outside of both sides in the first direction. 一種紅外線加熱器,能夠藉由紅外線加熱基板,其特徵在於,所述紅外線加熱器呈在多個部位彎折的管狀,並 且包括:彎曲部,以向外側凸出的方式彎折;及蓋部,配置為從外側覆蓋所述彎曲部的至少一部分;所述彎曲部係配置在第一方向的兩側,而且在與所述第一方向交叉的第二方向上並列有多個所述彎曲部,多個所述彎曲部係被所述紅外線加熱器本身的所述蓋部從所述第一方向的兩側的外側覆蓋。 An infrared heater capable of heating a substrate by infrared rays. The infrared heater is characterized in that the infrared heater is in the shape of a tube bent at a plurality of positions, and It also includes: a curved portion that is bent to protrude outward; and a cover portion that is configured to cover at least a part of the curved portion from the outside; the curved portion is arranged on both sides of the first direction and is connected to A plurality of the bending parts are arranged in a second direction intersecting the first direction, and the plurality of the bending parts are formed by the cover part of the infrared heater itself from the outer sides of both sides in the first direction cover. 一種基板加熱裝置,包括:減壓部,對塗布了溶液的基板的容納空間的氛圍進行減壓;及紅外線加熱器,能夠藉由紅外線加熱所述基板;所述紅外線加熱器呈在多個部位彎折的管狀,並且包括:彎曲部,以向外側凸出的方式彎折;蓋部,配置為從外側覆蓋所述彎曲部的至少一部分;及多個直部,在第一方向上具有長邊,並且在第二方向上並列配置;所述彎曲部連結相鄰的2個所述直部的端部,所述蓋部以從外側覆蓋多個所述彎曲部的方式在所述第二方向上直線狀地延伸,所述蓋部與所述彎曲部之間的間隔比相鄰的2個所述直部之間的間隔小。A substrate heating device includes: a decompression part for reducing the atmosphere of a storage space of a substrate coated with a solution; and an infrared heater capable of heating the substrate by infrared rays; the infrared heater is located at a plurality of locations The tube is bent and includes: a curved portion that is bent in a manner protruding outward; a cover portion configured to cover at least a part of the curved portion from the outside; and a plurality of straight portions having a length in the first direction Side, and arranged side by side in the second direction; the curved portion connects the ends of the two adjacent straight portions, and the cover portion covers a plurality of the curved portions from the outside in the second It extends linearly in the direction, and the interval between the cover portion and the curved portion is smaller than the interval between two adjacent straight portions.
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