TWI718912B - 砷化鎵射頻電路及毫米波前端模組 - Google Patents

砷化鎵射頻電路及毫米波前端模組 Download PDF

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TWI718912B
TWI718912B TW109109602A TW109109602A TWI718912B TW I718912 B TWI718912 B TW I718912B TW 109109602 A TW109109602 A TW 109109602A TW 109109602 A TW109109602 A TW 109109602A TW I718912 B TWI718912 B TW I718912B
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gallium arsenide
radio frequency
end module
wave front
amplifier
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蕭劭丞
黃智文
邱瑞杰
曾博楷
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穩懋半導體股份有限公司
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Abstract

本發明揭露一種砷化鎵射頻電路，其包含一功率放大器及一低雜訊放大器；一第一收發開關，耦接於該功率放大器及該低雜訊放大器，其中該第一收發開關是透過一偽晶型高速電子遷移率電晶體製程所製成；及一第一主動移相器，耦接於該功率放大器或該低雜訊放大器，其中該第一主動移相器是透過一異質接面雙極性電晶體製程所製成；其中，該砷化鎵射頻電路形成於一砷化鎵晶片。

Description

砷化鎵射頻電路及毫米波前端模組
本發明係指一種砷化鎵射頻電路及毫米波前端模組，尤指一種可減少電路面積的砷化鎵射頻電路及毫米波前端模組。
使用毫米波進行通訊的5G通訊系統之需求正在增長。在毫米波通訊系統中，波長是以毫米為單位，例如30GHz工作頻率的波長為10毫米(mm)。
值得注意的是，在多天線系統中，多個天線彼此間隔半波長，這意謂著該等天線之間的間隔可能只有5mm。此外，為了減小電路面積或減少繞線/線路的路徑長度，前端電路(如射頻鏈(RF Chain))，可以設置於該等天線之間。然而，某些現有的製程，例如純偽晶型高電子遷移率電晶體(pHEMT)製程或純異質雙極性電晶體(HBT)製程，將無法生產包含可以裝配到受半波長限制的尺寸中之射頻鏈的晶片。
因此，如何進一步減小電路面積也就成為業界所努力的目標之一。
因此，本發明的主要目的是提供一種具有減小電路面積的砷化鎵射頻電路和毫米波前端模組，以克服現有技術的缺點。
本發明的實施例公開了一種砷化鎵(GaAs)射頻(RF)電路。砷化鎵射頻電路包含功率放大器和低雜訊放大器；一第一收發開關，耦接於該功率放大器或該低雜訊放大器，其中該第一收發開關是透過一偽晶型高速電子遷移率電晶體(Pseudomorphic High Electron Mobility Transistor,pHEMT)製程所製成；以及一第一主動移相器，耦接於該功率放大器或該低雜訊放大器，其中該第一主動移相器是透過一異質接面雙極性電晶體(Heterojunction Bipolar Transistor,HBT)製程所製成；其中，該砷化鎵射頻電路形成於一砷化鎵晶片。
本發明的實施例公開了一種毫米波前端模組。該毫米波前端模組包含多個天線，其中該等天線之間的間距小於或等於該毫米波前端模組操作的工作頻率所相對應之波長的一半；以及一砷化鎵晶片，設置於該等天線之間，並具有多個砷化鎵射頻電路，各該砷化鎵射頻電路包括一功率放大器或一低雜訊放大器；一第一收發開關，耦接於該功率放大器或該低雜訊放大器，其中該第一收發開關是透過一偽晶型高速電子遷移率電晶體(Pseudomorphic High Electron Mobility Transistor,pHEMT)製程所製成；以及一第一主動移相器，耦接於該功率放大器或該低雜訊放大器，其中該第一主動移相器是透過一異質接面雙極性電晶體(Heterojunction Bipolar Transistor,HBT)製程所製成；其中，各該砷化鎵射頻電路分別耦接於各該天線。
10:毫米波前端模組
12:砷化鎵晶片
14:砷化鎵射頻電路
40:被動移相器
ANT:天線
DE:延遲元件
LNA:低雜訊放大器
MA:曲臂部
PA:功率放大器
PS1、PS2、50:主動移相器
RA:直臂部
RE:參考元件
SW1、SW2:收發開關
SW:開關
VGA1、VGA2、VGA:可變增益放大器
第1圖是本發明之實施例的一毫米波前端模組的俯視示意圖。
第2圖是本發明之實施例的多個砷化鎵射頻電路的示意圖。
第3圖是本發明之實施例的一砷化鎵射頻電路的示意圖。
第4圖是一被動移相器的示意圖。
第5圖是本發明之實施例的一主動移相器的示意圖。
第6圖是本發明之實施例的一砷化鎵射頻電路的截面示意圖。
第1圖是本發明之實施例的一毫米波前端模組10的俯視示意圖，第2圖是本發明之實施例的一砷化鎵晶片12的功能方塊圖。砷化鎵晶片12內包括多個砷化鎵(GaAs)射頻(RF)電路14。毫米波前端模組10可應用於一5G系統並操作於一數百億赫茲(例如30GHz)的工作頻率。毫米波前端模組10包含多個天線ANT及砷化鎵晶片12。為了方便說明，第1圖中的正方形是指由多個天線ANT和砷化鎵晶片12所佔據的區域。砷化鎵射頻電路14分別連接於該等天線ANT，其中，每一砷化鎵射頻電路14是連接於對應的一天線ANT。
在一些實施例中，天線ANT可設置於一印刷電路板PCB(未圖示於第1圖中)的第一側，砷化鎵晶片12可設置於PCB的與該第一側相反的第二側，但不限於此。
天線ANT彼此之間可間隔半個波長，這意謂著天線ANT之間的間隔可為對應於工作頻率的半波長λ/2，其中，該工作頻率即為毫米波前端模組10所操作之頻率。換言之，天線ANT之間的間距可小於或等於半波長λ/2。舉例來說，對工作頻率為30GHz的半波長λ/2大約是5毫米(mm)，而天線ANT之間的間距可小於或等於5mm。
值得注意的是，為了達到減小毫米波前端模組10的電路面積或繞線/線路之路徑長度的目的，砷化鎵晶片12可設置於天線ANT之間。在本實施例或其他實施例中，砷化鎵晶片12的面積可受限於半波長λ/2。例如砷化鎵晶片12的面積可限制在5×5mm2的面積。
在傳統上，砷化鎵晶片可透過一偽晶型高速電子遷移率電晶體 (Pseudomorphic High Electron Mobility Transistor,pHEMT)製程或一異質接面雙極性電晶體(Heterojunction Bipolar Transistor,HBT)製程所製成。由pHEMT製程所製成的砷化鎵晶片可比由HBT製程所製成的砷化鎵晶片擁有較佳的射頻電路性能(例如更好的隔離度或更低的***損耗)。然而，由pHEMT製程所製成的砷化鎵晶片之面積太大，以致無法放置於毫米波天線ANT之間。亦即由pHEMT製程所製成的傳統砷化鎵晶片無法符合半波長(如5×5mm2)所圍成的面積。因此，需在更好的射頻電路性能和電路面積之間尋找折衷的辦法。
為了在射頻電路性能和電路面積之間取得更好的平衡，在本發明中，砷化鎵晶片12是透過結合HBT製程及pHEMT製程的BiHEMT製程所製成。更進一步來說，在砷化鎵晶片12內，某些性能要求較高的元件可透過pHEMT製程所製成，而某些電路面積限制較大的元件可透過HBT製程所製成。
以下的描述和申請專利範圍中，透過pHEMT製程所製成的元件代表該元件包含偽晶型高速電子遷移率電晶體，而透過HBT製程所製成的元件代表該元件包含異質接面雙極性電晶體。
第3圖是本發明之實施例的砷化鎵射頻電路14的示意圖。砷化鎵射頻電路14包含收發開關(TR switch)SW1、SW2、一功率放大器PA、一低雜訊放大器LNA、兩主動移相器PS1、PS2以及可變增益放大器VGA1、VGA2。
不同於現有技術中的砷化鎵晶片或砷化鎵射頻電路，收發開關SW1、SW2是透過pHEMT製程所製成，而主動移相器PS1、PS2則是透過HBT製程所製成。除此之外，功率放大器PA、低雜訊放大器LNA以及可變增益放大器VGA1、VGA2可透過pHEMT製程或HBT製程所製成，其可視實際需要而定。
相較於透過HBT製程來製成收發開關，透過pHEMT製程來製成收發開關SW1、SW2的原因主要是pHEMT在高隔離度和低***損耗方面具有更好的性能，因此，透過pHEMT製程來製成收發開關SW1、SW2將獲得更好的射頻電 路性能。
另外，使用主動移相器(而不是被動移相器)的原因主要是被動移相器需要或佔用太多面積。詳細來說，第4圖與第5圖分別是一被動移相器40及一主動移相器50的示意圖。在一些實施例中，主動移相器PS1、PS2可用主動移相器50來實現，但不以此為限。
被動移相器40具有多個開關SW、多個參考元件RE以及多個延遲元件DE。參考元件RE及延遲元件DE可藉由傳輸線來實現。參考元件RE可具有一直臂部RA，延遲元件DE可具有一曲臂部MA，從而產生一定的相位延遲。需注意的是，當相位延遲越大，延遲元件DE所需要或佔用的面積越大，其為被動移相器40需要或佔據大面積的原因。另一方面，雖然主動移相器50具有多個可變增益放大器VGA(其同樣需要電路面積)，但主動移相器50所需的面積仍比被動移相器40少。另外，主動移相器50是透過HBT製程所製成的，其說明了主動移相器50內的可變增益放大器VGA是由HBT所實現。因此，相較於透過pHEMT製程所製成的主動移相器，透過HBT製程所製成的主動移相器50具有較小的面積。
具體來說，一個透過pHEMT製程所製成的28GHz被動移相器需要3.8×1mm2的面積，而一個透過HBT製程所製成的主動移相器僅需要1.3×0.4mm2的面積，其比透過pHEMT製程所製成的被動移相器少了7.3倍的面積。因此，相較於透過pHEMT製程所製成的被動移相器之面積，透過HBT製程所製成的主動移相器之面積明顯減小。
此外，考慮砷化鎵射頻電路的整體電路，透過pHEMT製程所製成的砷化鎵射頻電路(與第3圖內的電路結構相同)需要5.5×2mm2的面積。如第3圖所示，透過BiHEMT製程所製成的砷化鎵射頻電路14僅需要2×1.2mm2的面積，其面積減少了4.58倍。其中，在此BiHEMT製程中，收發開關SW1、SW2、功率放大器PA與低雜訊放大器LNA是透過pHEMT製程所製成，而主動移相器PS1、 PS2與可變增益放大器VGA1、VGA2是透過HBT製程所製成。另外，如上所述透過BiHEMT製程所製成的砷化鎵射頻電路14可符合受限於毫米波系統之半波長的砷化鎵晶片尺寸限制。
值得注意的是，以上所述的實施例用於說明本發明的概念。本領域技術人員可以據此進行修改和變更，並不局限於此。舉例來說，砷化鎵晶片12內的pHEMT元件和HBT元件之間的配置不受限制。pHEMT元件可設置於HBT元件上，或者可將HBT元件設置於pHEMT元件上，如第6圖的上半部所示，但不限於此。或者，HBT元件可設置於pHEMT元件的旁邊，如第6圖的下半部所示，其也不限於此。
總而言之，本發明透過HBT製程而製成了主動移相器，並且透過pHEMT製程而製成收發開關，其可在射頻電路性能與電路面積之間取得更好的平衡或折衷辦法。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
10:毫米波前端模組
12:砷化鎵晶片
ANT:天線

Claims (8)

  1. 一種毫米波前端模組，包含：多個天線，其中該等天線之間的間距小於或等於該毫米波前端模組操作的工作頻率所相對應之波長的一半；以及一砷化鎵晶片，設置於該等天線之間，並具有多個砷化鎵射頻電路，各該砷化鎵射頻電路包括：一功率放大器或一低雜訊放大器；一第一收發開關，耦接於該功率放大器或該低雜訊放大器，其中該第一收發開關是透過一偽晶型高速電子遷移率電晶體(Pseudomorphic High Electron Mobility Transistor，pHEMT)製程所製成；以及一第一主動移相器，耦接於該功率放大器或該低雜訊放大器，其中該第一主動移相器是透過一異質接面雙極性電晶體(Heterojunction Bipolar Transistor，HBT)製程所製成；其中，各該砷化鎵射頻電路分別耦接於各該天線。
  2. 如請求項1所述的毫米波前端模組，其中該第一主動移相器具有透過該HBT製程所製成的多個可變增益放大器。
  3. 如請求項1所述的毫米波前端模組，其中各該砷化鎵射頻電路還包括一第一可變增益放大器，耦接於該功率放大器或該低雜訊放大器。
  4. 如請求項3所述的毫米波前端模組，其中該第一可變增益放大器是透過該HBT製程所製成。
  5. 如請求項3所述的毫米波前端模組，其中，各該砷化鎵射頻電路還包括：一第二可變增益放大器；其中，該第一可變增益放大器耦接於該功率放大器，該第二可變增益放大器耦接於該低雜訊放大器。
  6. 如請求項1所述的毫米波前端模組，其中，該功率放大器或該低雜訊放大器是透過該pHEMT製程所製成。
  7. 如請求項1所述的毫米波前端模組，其中，該功率放大器或該低雜訊放大器是透過該HBT製程所製成。
  8. 如請求項1所述的毫米波前端模組，其中，各該砷化鎵射頻電路還包括：一第二主動移相器，耦接於該功率放大器或該低雜訊放大器，其中該第二主動移相器是透過該HBT製程所製成；以及一第二收發開關，耦接於該功率放大器或該低雜訊放大器，其中該第二收發開關是透過該pHEMT製程所製成。
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