TWI716030B - 切割加工用製劑及加工處理液 - Google Patents
切割加工用製劑及加工處理液 Download PDFInfo
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Abstract
本發明係有效地去除切割步驟中由晶圓產生的切屑、由切割膠帶的黏著劑層產生的黏著劑微細碎片。本發明的切割加工用製劑,係在純水中含有:1.0~1.5質量%之部分鹼化聚乙烯醇,其聚合度為200~400且鹼化度為75~85莫耳%;及0.4~0.6質量%之聚氧乙烯聚氧丙烯二醇醚,其聚氧乙烯及聚氧丙烯二醇之共聚比為75:25~85:15且數均分子量為10000~20000。此切割加工用製劑作為以純水稀釋1萬~10萬倍之加工處理液使用,在切割加工處理步驟中噴於切割刀進行切割之部分。
Description
本發明係關於一種加工用製劑及加工處理液,係在以切割刀將形成於晶圓上的多個晶片狀裝置切割之切割處理時使用。
以矽或藍寶石等化合物作為基板,且具有LSI、CMOS、功率元件等之圖樣的晶圓上,形成有多個以切割道分區所形成的各個元件。像這樣以切割道縱橫地分區而分離之元件,將其以切割道分割形成各個單獨一片的元件時,主要有使切割刀高速旋轉來切割的方法或照射雷射光來切斷的方法。
以切割刀進行切割之情況下,需要在晶圓及旋轉之切割刀之間流入加工處理液,一邊冷卻切斷處且一邊降低切斷時的摩擦阻力以順暢地進行切割,並且沖洗去除因切割產生的切屑。
作為解決上述問題之應對方法,當初使用純水作為加工處理液。之後為了提升其效果,檢討了各種方法。例如,已知有一種處理液,包含50質量%以上之乙烯基吡咯烷酮與乙酸乙烯酯等含有乙烯基之單體的聚合物,重量平均分子量為40000~160000,且含有發泡劑(專利文獻1:日本特許第5253765號公報)。
使用這樣的處理液相較於使用純水之情形,已知可以更有效率地去除晶圓的被細小化之切屑,但其他仍附著並殘留在裝置上,存在有無法去除乾淨之物。起初不甚明瞭此原因為何,而在進行各種研究後得知下述原
因。
切割晶圓時,係將晶圓貼附黏著性樹脂薄片(切割膠帶),並將此切割膠帶固定於晶圓架來進行切割處理。進行此切割處理時,切割刀沿著切割道切斷各裝置,但此切割刀的刀鋒係些微進入貼附於晶圓之切割膠帶的黏著劑層來進行切斷。此時切割刀的刀鋒會帶起黏著劑層的黏著劑,形成散亂的微細碎片,已知此微細碎片會附著在裝置表面。
特別是在用於照相機之攝影元件(image sensor)中,裝置(晶片)之表面的鏡頭只要附著一點上述切屑或黏著劑的微細碎片,即降低元件的性能,成為不良率上升的重要原因,故為了避免這樣的附著,需要進一步改良。
專利文獻1為日本特許第5253765號公報。
如上所述,需要一種加工用製劑及加工處理液,可以有效地去除不僅是切割步驟中由晶圓產生的切屑,還可去除比其帶來更壞影響之由切割膠帶的黏著劑層產生的黏著劑微細碎片,且嘗試得到這樣的加工用製劑及加工處理液。又,切割加工中係使大量的純水流動來進行,故需要大量的純水,非常耗費成本,且有用水過度而對地區居民的生活用水產生影響的疑慮。
本發明係一種切割加工用製劑,係在純水中含有:1.0~1.5質量%之部分鹼化聚乙烯醇,其聚合度為200~400且鹼化度為75~85莫耳%;及0.4~0.6質量%之聚氧乙烯聚氧丙烯二醇醚,其聚氧乙烯及聚氧丙烯二醇之共聚比為75:25~85:15且數均分子量為10000~20000。
又,此切割加工用製劑可另含有約0.1質量%之苯氧乙醇。這樣的切割加工用製劑通常作為以純水稀釋1萬~10萬倍之加工處理液使用,
在切割加工處理步驟中噴於切割刀進行切割之部分。
根據本發明,將半導體等之晶圓切割加工時,被切割刀由切割膠帶之黏著劑層帶起的黏著劑的微細碎片,可藉由加工液與切屑一同沖洗去除,故可以減少晶片不良,期望良率提升。又,本切割加工用製劑以高倍率稀釋亦可得到充分的效果,因此在切割加工後,使用過的加工處理液可通至處理水再生設備而不需要額外負荷或多餘操作。其結果可將再生處理水於其他步驟再利用,及可有效率地進行廢水處理。
作為本發明之切割加工用製劑的成分,係使用聚乙烯醇。此聚乙烯醇的乙烯醇聚合度為約200~400,較佳為約250~350,更佳為約280~320。又,此聚乙烯醇係一部分被鹼化之部分鹼化聚乙烯醇,其鹼化度為約70~90莫耳%,較佳為約75~85莫耳%,更佳為約78~82莫耳%。
與上述部分鹼化聚乙烯醇同時使用聚氧乙烯聚氧丙烯二醇醚。此聚氧乙烯聚氧丙烯二醇醚係聚氧乙烯及聚氧丙烯二醇的共聚物,其共聚比為約75:25~85:15,較佳為約80:20~83:17。並且,其數均分子量為約10000~20000,較佳為約13000~18000,更佳為約14000~16000。
將上述部分鹼化聚乙烯醇1.0~1.5質量%及聚氧乙烯聚氧丙烯二醇醚0.4~0.6質量%加入純水中,則兩者在純水中形成良好溶解之狀態,得到切割加工用製劑。
這樣的切割加工用製劑被用於切割裝置,此時,係進一步以純水高度稀釋成1萬~10萬倍之狀態作為加工處理液。此被稀釋之處理液被連
續地供給至以切割刀切割晶圓之部分,沖洗清除因切割產生之切屑及切割膠帶之黏著劑的微細碎片,且一併防止切割刀之摩擦伴隨的晶圓之局部溫度上升。
此切割加工用製劑中,可進一步使用約0.1質量%之苯氧乙醇作為防腐劑,另可適當地依照需求使用其他pH調整劑。
實施例1:作為部分鹼化聚乙烯醇,係使用聚乙烯醇聚合度為300、鹼化度為80莫耳%、數均分子量為16000者。作為聚氧乙烯聚氧丙烯二醇醚,係使用聚氧乙烯及聚氧丙烯二醇的聚合物,其共聚比為83:17且數均分子量為16000者。如第1表所示,將1.33質量%之上述部分鹼化聚乙烯醇(以聚合物A表示)及0.5質量%之聚氧乙烯聚氧丙烯二醇醚(以界面活性劑A表示)混合溶解於98.17質量%(平衡量)之純水,得到切割加工用製劑。
比較例1:將0.83質量%的乙烯基吡咯烷酮及乙酸乙烯酯之莫耳數比為6:4且重量平均分子量51000之共聚物(以聚合物B表示)及0.83質量%的聚氧乙烯聚氧丙烯二醇醚(以界面活性劑A表示)混合溶解於98.34質量%(平衡量)之純水,得到切割加工用製劑。
比較例2:將1.33質量%之聚三葡萄糖(pullulan,麥芽三糖之α-1,6鍵結的多醣類)(以聚合物C表示)及0.33質量%之聚氧伸烷基烷基醚(HLB14.7)(以界面活性劑B表示)混合溶解於98.34質量%(平衡量)之純水,得到切割加工用製劑。
不同成分的切割加工試驗:將實施例1、比較例1~2之各加工用製劑以純水稀釋1萬倍來調製加工處理液。將形成有低介電常數膜以仿照攝影元件的直徑300mm矽晶圓,設置於東京精密公司製切割裝置AD3000T-HC,一邊將加工處理液以15公升/分鐘之流量供給至切斷部分一邊
進行切割加工。切割後,一邊以Camtek公司製晶圓外觀檢查裝置Eagle及Olympus公司製測定顯微鏡來觀察,一邊評價切割品質及晶圓表面的落塵量。切割品質係同樣地比較切斷位置的燒焦、缺口、破損(chipping)之發生狀態。又,晶圓表面的落塵量係統計存在於晶片表面之落塵數量後,以比較例2之落塵量作為1.00之指數來標記。指數值越小則表示落塵量越少,未被汙染。
不同成分的試驗結果及評價:上述不同成分的切割加工試驗結果如第1表所示。切割品質係評價燒焦、缺口、破損之發生狀態,惟實施例1及比較例1~2均未發現該等發生,結果為優良(○),未發現顯著差異。關於晶圓表面的落塵量(指數),相較於比較例2的1.00,比較例1為0.25,而實施例1的落塵量更少,為0.20,因此可知實施例1的晶圓表面之落塵量少,汙染度大幅降低。
不同稀釋比例的切割加工試驗:對實施例1及比較例1改變加工用製劑的稀釋比例,與上述同樣地進行切割加工試驗。加工用製劑的稀釋比例除了上述1萬倍稀釋液以外,另準備6萬倍稀釋液、10萬倍稀釋液來進行試驗。
不同稀釋比例的試驗結果及評價:上述不同稀釋比例的切割加工試驗結果如第2表所示。相較於實施例1的1萬倍稀釋液,用實施例1-2的6萬倍稀釋液之落塵量(指數)由0.20進一步下降至0.14,實施例1-3的10萬倍稀釋液亦降低至0.18。另一方面,用比較例1的1萬倍稀釋液之落塵量(指數)為0.25,用比較例1-2的6萬倍稀釋液則上升至0.45,用比較例1-3的10萬倍稀釋液更升高至0.69。像這樣,比較例1之稀釋液若提升稀釋比例則落塵量增加,相較於此,實施例1之稀釋液即使提升稀釋比例,落塵量幾乎不會改變,甚至變少,因此以高稀釋倍率亦可充分使用。
Claims (6)
- 一種切割加工用製劑,係在純水中含有:1.0~1.5質量%之部分鹼化聚乙烯醇,其聚合度為200~400且鹼化度為75~85莫耳%;及0.4~0.6質量%之聚氧乙烯聚氧丙烯二醇醚,其聚氧乙烯及聚氧丙烯之共聚比為75:25~85:15且數均分子量為10000~20000。
- 如申請專利範圍第1項所述之切割加工用製劑,其中,上述部分鹼化聚乙烯醇的聚合度為300,鹼化度為80莫耳%。
- 如申請專利範圍第1或2項所述之切割加工用製劑,其中,上述聚氧乙烯聚氧丙烯二醇醚的聚氧乙烯及聚氧丙烯之共聚比為83:17,數均分子量為15500。
- 如申請專利範圍第1或2項所述之切割加工用製劑,另含有0.1質量%之苯氧乙醇。
- 如申請專利範圍第3項所述之切割加工用製劑,另含有0.1質量%之苯氧乙醇。
- 一種加工處理液,係將如申請專利範圍第1~5項中任一項所述之切割加工用製劑以純水稀釋1萬~10萬倍來使用。
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