TWI715842B - Bias voltage modulation method, bias voltage modulation system and plasma processing device - Google Patents

Bias voltage modulation method, bias voltage modulation system and plasma processing device Download PDF

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TWI715842B
TWI715842B TW107118360A TW107118360A TWI715842B TW I715842 B TWI715842 B TW I715842B TW 107118360 A TW107118360 A TW 107118360A TW 107118360 A TW107118360 A TW 107118360A TW I715842 B TWI715842 B TW I715842B
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bias
voltage
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bias voltage
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TW201911363A (en
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蘇恒毅
韋剛
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大陸商北京北方華創微電子裝備有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy

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Abstract

本發明提供了一種偏壓調製方法、偏壓調製系統和電漿處理裝置。該偏壓調製方法包括：在向用於承載待加工工件的基座加載偏壓功率期間，增大偏壓射頻源的輸出電壓，以使輸出電壓由初始電壓值增加至目標電壓值，從而使在待加工工件表面上產生的負偏壓在向基座加載偏壓功率期間保持在預設範圍內。本發明還揭露了一種偏壓調製系統。本發明揭露的電漿處理裝置包括本發明提供的偏壓調製系統。本發明的偏壓調製方法、偏壓調製系統和電漿處理裝置均可以避免在向基座加載偏壓功率期間出現晶圓表面的負偏壓降低的情況，從而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。The invention provides a bias voltage modulation method, a bias voltage modulation system and a plasma processing device. The bias modulation method includes: increasing the output voltage of the bias radio frequency source during the bias power loading of the susceptor for carrying the workpiece to be processed, so that the output voltage is increased from the initial voltage value to the target voltage value, so that The negative bias voltage generated on the surface of the workpiece to be processed is maintained within a preset range during the bias power applied to the base. The invention also discloses a bias voltage modulation system. The plasma processing device disclosed in the present invention includes the bias voltage modulation system provided by the present invention. The bias voltage modulation method, the bias voltage modulation system, and the plasma processing device of the present invention can all prevent the negative bias voltage on the wafer surface from being reduced during the bias power being applied to the susceptor, thereby not only avoiding the reduction of the plasma processing rate , To ensure productivity, and to ensure that the surface of the workpiece to be processed can be fully processed, so that its electrical performance meets the requirements.

Description

偏壓調製方法、偏壓調製系統和電漿處理裝置Bias voltage modulation method, bias voltage modulation system and plasma processing device

本發明涉及半導體領域，具體地，涉及一種偏壓調製方法、偏壓調製系統和電漿處理裝置。The invention relates to the field of semiconductors, and in particular to a bias voltage modulation method, a bias voltage modulation system and a plasma processing device.

隨著半導體元器件製造製程的迅速發展，對元器件性能與整合度要求越來越高，使得電漿技術得到了極廣泛的應用。在電漿蝕刻或沉積系統中，通過在真空反應腔室內引入各種反應氣體(如Cl2 、SF6 、C4 F8 、O2 等)，利用外加電磁場（直流或交流）使反應氣體完全解離，形成電漿。電漿中含有大量電子、離子（包括正離子和負離子）、激發態原子、分子和自由基等的活性粒子，這些活性粒子和置於腔體並曝露在電漿中的晶圓表面相互作用，使晶圓表面產生各種物理化學反應，從而使晶圓表面性能產生變化，完成諸如蝕刻或沉積等的製程過程。在用於半導體製造製程的電漿裝置的研發中，最重要的因素是提高對晶圓的加工能力，以提高產率，以及執行用於製造高度整合裝置製程的能力。With the rapid development of the manufacturing process of semiconductor components, the performance and integration requirements of the components are getting higher and higher, which makes the plasma technology widely used. In the plasma etching or deposition system, various reaction gases (such as Cl 2 , SF 6 , C 4 F 8 , O 2, etc.) are introduced into the vacuum reaction chamber, and the reaction gas is completely dissociated by an external electromagnetic field (DC or AC) , The formation of plasma. Plasma contains a large number of active particles such as electrons, ions (including positive and negative ions), excited atoms, molecules, and free radicals. These active particles interact with the surface of the wafer placed in the cavity and exposed to the plasma. Various physical and chemical reactions are generated on the surface of the wafer, so that the performance of the surface of the wafer is changed, and the process such as etching or deposition is completed. In the research and development of plasma devices used in semiconductor manufacturing processes, the most important factors are the ability to improve wafer processing capabilities to increase yields, and the ability to perform processes for manufacturing highly integrated devices.

在傳統的半導體製造製程中，使用比較廣泛的半導體蝕刻裝置激發電漿的方式為電感耦合電漿（ICP，Inductive Coupled Plasma Emission Spectrometer），這種方式可以在較低工作氣壓下獲得高密度的電漿，而且結構簡單，造價低。In the traditional semiconductor manufacturing process, the most widely used semiconductor etching device to excite plasma is Inductive Coupled Plasma Emission Spectrometer (ICP, Inductive Coupled Plasma Emission Spectrometer), which can obtain high-density electricity at a lower working pressure. It has simple structure and low cost.

如第1圖所示，為典型ICP半導體蝕刻裝置的結構示意圖。在真空腔室3的頂部設置有介電質視窗2（石英或陶瓷），且在介電質視窗2的上方設置有平面射頻天線1，上射頻源8輸出的射頻能量通過射頻天線1，以感應放電的形式，將能量耦合至真空腔室3中，以激發腔室內的反應氣體產生高密度電漿。分佈在介電質視窗2附近的電漿由上至下擴散至晶圓4表面，進行特定的製程過程。另外，在真空腔室3中還設置有典型的下電極結構，其包括載片臺6、金屬電極5以及與其電連接的偏壓射頻源7和阻抗匹配網路。其中，載片臺6用於承載晶圓4；金屬電極5內嵌在載片臺6中；偏壓射頻源7通過金屬電極5提供射頻能量，以在晶圓表面產生負偏壓，從而控制轟擊至晶圓表面的離子能量。As shown in Figure 1, it is a schematic diagram of a typical ICP semiconductor etching device. A dielectric window 2 (quartz or ceramic) is provided on the top of the vacuum chamber 3, and a planar RF antenna 1 is provided above the dielectric window 2. The RF energy output by the upper RF source 8 passes through the RF antenna 1 to In the form of induction discharge, energy is coupled to the vacuum chamber 3 to excite the reaction gas in the chamber to generate high-density plasma. The plasma distributed near the dielectric window 2 diffuses from top to bottom to the surface of the wafer 4 to perform a specific manufacturing process. In addition, a typical lower electrode structure is also provided in the vacuum chamber 3, which includes a slide table 6, a metal electrode 5, and a bias radio frequency source 7 electrically connected to it and an impedance matching network. Among them, the wafer stage 6 is used to carry the wafer 4; the metal electrode 5 is embedded in the wafer stage 6; the bias RF source 7 provides radio frequency energy through the metal electrode 5 to generate a negative bias on the wafer surface, thereby controlling The energy of the ions bombarding the wafer surface.

但是，在製程過程中，由於晶圓不導電，在偏壓射頻源7提供射頻能量時，會有正離子累積到晶圓表面，產生正電勢，產生的正電勢會降低晶圓表面的負偏壓，從而導致對電漿中正離子的吸引力減弱，降低了到達晶圓表面的正離子的數量和速率，進而不僅降低了晶圓表面的蝕刻速率，降低了產能，而且可能出現待加工工件表面不能夠被充分處理的情況，從而影響工件的電學性能。However, during the manufacturing process, since the wafer is not conductive, when the bias RF source 7 provides RF energy, positive ions will accumulate on the wafer surface and generate a positive potential, which will reduce the negative bias on the wafer surface. This reduces the attraction of positive ions in the plasma, reducing the number and rate of positive ions reaching the surface of the wafer, thereby not only reducing the etching rate of the wafer surface, reducing the productivity, but also the surface of the workpiece to be processed may appear Circumstances that cannot be adequately handled, thereby affecting the electrical performance of the workpiece.

本發明針對先前技術中存在的上述技術問題，提供一種偏壓調製方法、偏壓調製系統和電漿處理裝置，其可以避免在向基座加載偏壓功率期間出現晶圓表面的負偏壓降低的情況，從而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。In view of the above technical problems in the prior art, the present invention provides a bias voltage modulation method, a bias voltage modulation system, and a plasma processing device, which can avoid the decrease of the negative bias voltage on the wafer surface when the bias power is applied to the susceptor. In this way, it can not only avoid the reduction of plasma processing rate and ensure productivity, but also ensure that the surface of the workpiece to be processed can be fully processed, so that its electrical performance meets the requirements.

本發明提供一種偏壓調製方法，包括： 在向用於承載待加工工件的基座加載偏壓功率期間，增大偏壓射頻源的輸出電壓，以使該輸出電壓由初始電壓值增加至目標電壓值，從而使該待加工工件表面上產生的負偏壓在向該基座加載偏壓功率期間保持在預設範圍內。The present invention provides a bias modulation method, including: increasing the output voltage of the bias radio frequency source during the bias power loading of the susceptor for carrying the workpiece to be processed, so that the output voltage increases from the initial voltage value to the target Voltage value, so that the negative bias voltage generated on the surface of the workpiece to be processed is kept within a preset range during the bias power is applied to the base.

可選的，該目標電壓值與該初始電壓值的差值等於負偏壓損失值，該負偏壓損失值為在向該基座加載偏壓功率期間，該偏壓射頻源的輸出電壓保持該初始電壓值不變時，在該待加工工件表面上產生的負偏壓的損失值。Optionally, the difference between the target voltage value and the initial voltage value is equal to a negative bias loss value, and the negative bias loss value is during the period when bias power is applied to the base, the output voltage of the bias radio frequency source remains When the initial voltage value is unchanged, the negative bias voltage loss value generated on the surface of the workpiece to be processed.

可選的，按脈衝週期向該基座加載偏壓功率； 其中，該脈衝週期包括脈衝開啟時間和脈衝關閉時間，在該脈衝開啟時間，向該基座加載偏壓功率，同時增大偏壓射頻源的輸出電壓，以使該輸出電壓由初始電壓值增加至目標電壓值；在該脈衝關閉時間，停止向該基座加載偏壓功率。Optionally, the bias power is applied to the pedestal according to a pulse period; wherein the pulse period includes a pulse on time and a pulse off time, and the bias power is applied to the pedestal during the pulse on time while increasing the bias voltage The output voltage of the radio frequency source, so that the output voltage is increased from the initial voltage value to the target voltage value; during the pulse off time, the bias power to the base is stopped.

可選的，在該脈衝開啟時間向該基座加載偏壓功率，具體包括以下步驟： 步驟S101：檢測並記錄t=0時，在該待加工工件表面上產生的第一偏壓V0 ；該第一偏壓V0 等於該初始電壓值； 步驟S102：檢測並記錄在當前的脈衝開啟時間的tn時刻，在該待加工工件表面上產生的第二偏壓Vn；其中， tn=n(T1/N) N≥100，且N為整數；1≤n≤N，且n為整數；T1為該脈衝開啟時間的長度； 當n=N時，在tn時刻，該偏壓射頻源的輸出電壓為該目標電壓值； 步驟S103：計算該第二偏壓Vn與第三偏壓V’n-1的差值V；其中，該第三偏壓V’n-1為在上一時刻完成偏壓補償後在該待加工工件表面上產生的偏壓；第三偏壓V0 '等於第一偏壓V0 ； 步驟S104：將在當前的脈衝開啟時間的tn時刻該偏壓射頻源的輸出電壓即時調整為tn-1時刻該偏壓射頻源的輸出電壓與該差值V之和； 步驟S105：檢測並記錄完成偏壓補償後在該待加工工件表面上產生的第三偏壓Vn ’； 步驟S106：判斷n是否等於N；如果是，則步驟結束；如果否，則將n替換為n+1,並依次執行該步驟S102至步驟S106。Optionally, applying bias power to the susceptor during the pulse on time specifically includes the following steps: Step S101: detecting and recording the first bias voltage V 0 generated on the surface of the workpiece to be processed when t= 0 ; The first bias voltage V 0 is equal to the initial voltage value; Step S102: Detect and record the second bias voltage Vn generated on the surface of the workpiece to be processed at time tn of the current pulse on time; where tn=n( T1/N) N≥100, and N is an integer; 1≤n≤N, and n is an integer; T1 is the length of the pulse on time; When n=N, at tn, the output of the bias RF source The voltage is the target voltage value; Step S103: Calculate the difference V between the second bias voltage Vn and the third bias voltage V'n-1; where the third bias voltage V'n-1 is completed at the previous moment The bias voltage generated on the surface of the workpiece to be processed after the bias voltage compensation; the third bias voltage V 0 ′ is equal to the first bias voltage V 0 ; Step S104: the bias voltage of the radio frequency source is set at tn of the current pulse on time The output voltage is instantly adjusted to the sum of the output voltage of the bias RF source and the difference V at time tn-1; Step S105: Detect and record the third bias voltage V generated on the surface of the workpiece after the bias compensation is completed n '; Step S106: judge whether n is equal to N; if yes, the step ends; if no, replace n with n+1, and execute steps S102 to S106 in sequence.

可選的，該初始電壓值與該目標電壓值的比值的取值範圍在0.1-0.9。Optionally, the value range of the ratio of the initial voltage value to the target voltage value is 0.1-0.9.

可選的，在向該基座加載偏壓功率期間，該偏壓射頻源的輸出電壓呈線性增大。Optionally, during the period when the bias power is applied to the base, the output voltage of the bias radio frequency source increases linearly.

可選的，該偏壓射頻源的輸出電壓呈線性增大的斜率為： K=（Vt-Vs）/T1； 其中，Vt為該目標電壓值，Vs為該初始電壓值，T1為該脈衝開啟時間。Optionally, the output voltage of the bias RF source has a linearly increasing slope: K=(Vt-Vs)/T1; where Vt is the target voltage value, Vs is the initial voltage value, and T1 is the pulse opening time.

作為另一個技術方案，本發明還提供一種偏壓調製系統，包括： 偏壓射頻源，該偏壓射頻源與用於承載待加工工件的基座電連接，用於向該基座加載偏壓功率； 電壓調整模組，該電壓調整模組與該偏壓射頻源電連接，用於在該偏壓射頻源向該基座加載偏壓功率期間，增大該偏壓射頻源的輸出電壓，以使該輸出電壓由初始電壓值增加至目標電壓值，從而使在該待加工工件表面上產生的負偏壓在該偏壓射頻源向該基座加載偏壓功率期間保持在預設範圍。As another technical solution, the present invention also provides a bias modulation system, including: a bias radio frequency source, the bias radio frequency source is electrically connected to a base for carrying the workpiece to be processed, and is used for biasing the base Power; a voltage adjustment module, which is electrically connected to the bias radio frequency source, and is used to increase the output voltage of the bias radio frequency source during the period when the bias radio frequency source loads the base with bias power, The output voltage is increased from the initial voltage value to the target voltage value, so that the negative bias voltage generated on the surface of the workpiece to be processed is maintained in the preset range during the biasing of the bias power to the base by the bias radio frequency source.

可選的，該偏壓射頻源為脈衝調製射頻源，以能夠按脈衝週期向該基座加載偏壓功率；其中， 該脈衝週期包括脈衝開啟時間和脈衝關閉時間，在該脈衝開啟時間，該偏壓射頻源向該基座加載偏壓功率，同時該電壓調整模組增大偏壓射頻源的輸出電壓，以使該輸出電壓由初始電壓值增加至目標電壓值；在該脈衝關閉時間，該偏壓射頻源停止向該基座加載偏壓功率。Optionally, the bias radio frequency source is a pulse modulated radio frequency source to be able to apply bias power to the base according to a pulse period; wherein the pulse period includes a pulse on time and a pulse off time. During the pulse on time, the The bias radio frequency source loads the bias power to the base, and the voltage adjustment module increases the output voltage of the bias radio frequency source so that the output voltage increases from the initial voltage value to the target voltage value; during the pulse off time, The bias radio frequency source stops applying bias power to the base.

可選的，該電壓調整模組包括： 時鐘產生器，該時鐘產生器能夠發出與該偏壓射頻源同步的時鐘訊號； 電壓感測器，該電壓感測器與該時鐘產生器進行通訊，以能夠在該脈衝開啟時間內檢測在該待加工工件表面上產生的負偏壓； 數位處理器，該數位處理器與該電壓感測器進行通訊，用於接收來自該電壓感測器發送的該負偏壓，並根據該負偏壓計算獲得輸出電壓調整值，並將該偏壓射頻源的輸出電壓調整為該輸出電壓調整值，以使在該待加工工件表面上產生的負偏壓在向該基座加載偏壓功率期間保持在預設值。Optionally, the voltage adjustment module includes: a clock generator, which can send out a clock signal synchronized with the bias radio frequency source; a voltage sensor, which communicates with the clock generator, In order to be able to detect the negative bias voltage generated on the surface of the workpiece to be processed within the pulse on time; a digital processor, the digital processor communicates with the voltage sensor, and is used to receive the signal sent from the voltage sensor The negative bias voltage is calculated according to the negative bias voltage to obtain the output voltage adjustment value, and the output voltage of the bias radio frequency source is adjusted to the output voltage adjustment value, so that the negative bias voltage generated on the surface of the workpiece to be processed The bias power is maintained at the preset value during the loading of the susceptor.

可選的，該電壓感測器檢測t=0時，在該待加工工件表面上產生的第一偏壓V0 ；該第一偏壓V0 等於該初始電壓值；和檢測在當前的脈衝開啟時間的tn時刻，在該待加工工件表面上產生的第二偏壓Vn；其中， tn=n(T1/N) N≥100，且N為整數；1≤n≤N，且n為整數；T1為該脈衝開啟時間的長度； 當n=N時，在tn時刻，該偏壓射頻源的輸出電壓為該目標電壓值；以及檢測並記錄完成偏壓補償後在該待加工工件表面上產生的第三偏壓Vn ’。Optionally, the voltage sensor detects a first bias voltage V 0 generated on the surface of the workpiece when t=0; the first bias voltage V 0 is equal to the initial voltage value; and detects the current pulse The second bias voltage Vn generated on the surface of the workpiece to be processed at time tn of the opening time; where tn=n(T1/N) N≥100, and N is an integer; 1≤n≤N, and n is an integer ; T1 is the length of the pulse on time; when n=N, at tn, the output voltage of the bias radio frequency source is the target voltage value; and after detecting and recording the bias compensation on the surface of the workpiece to be processed The generated third bias voltage V n '.

可選的，該數位處理器接收並記錄來自該電壓感測器發送的該第一偏壓V0 、該第二偏壓Vn和該第三偏壓Vn ’，並執行： 計算該第二偏壓Vn與第三偏壓Vn-1 ’的差值V；其中，該第三偏壓Vn-1 ’為在上一時刻完成偏壓補償後在該待加工工件表面上產生的偏壓；V0 '等於第一偏壓V0 ； 將在當前的脈衝開啟時間的tn時刻該偏壓射頻源的輸出電壓即時調整為tn-1時刻該偏壓射頻源的輸出電壓與該差值V之和； 判斷n是否等於N；如果是，則控制該電壓感測器停止檢測工作，和停止調整該偏壓射頻源的輸出電壓；如果否，則控制該電壓感測器繼續檢測工作，和即時調整該偏壓射頻源的輸出電壓。Optionally, the digital processor receives and records the first bias voltage V 0 , the second bias voltage Vn, and the third bias voltage V n ′ sent from the voltage sensor, and executes: calculate the second The difference V between the bias voltage Vn and the third bias voltage V n-1 ′; wherein, the third bias voltage V n-1 ′ is the bias generated on the surface of the workpiece to be processed after the bias compensation is completed at the previous moment Voltage; V 0 'is equal to the first bias voltage V 0 ; The output voltage of the biased RF source at time tn of the current pulse on time is instantly adjusted to the difference between the output voltage of the biased RF source at time tn-1 The sum of V; judge whether n is equal to N; if yes, control the voltage sensor to stop the detection work, and stop adjusting the output voltage of the bias RF source; if not, control the voltage sensor to continue the detection work, And immediately adjust the output voltage of the bias RF source.

作為另一個技術方案，本發明還提供一種電漿處理裝置，包括：用於承載待加工工件的基座， 還包括本發明提供的上述偏壓調製系統，該偏壓調製系統與該基座電連接。As another technical solution, the present invention also provides a plasma processing device, including: a base for carrying a workpiece to be processed, and also includes the above-mentioned bias modulation system provided by the present invention, and the bias modulation system is electrically connected to the base. connection.

本發明的有益效果： 本發明提供的偏壓調製方法、偏壓調製系統和電漿處理裝置的技術方案中，在向基座加載偏壓功率期間，增大偏壓射頻源的輸出電壓，以使該輸出電壓由初始電壓值增加至目標電壓值。由於偏壓射頻源的輸出電壓逐漸增大，這使得在待加工工件表面上產生的負偏壓逐漸增大，而負偏壓的增大量能夠全部或部分補償因逐漸累積到待加工工件表面的正離子產生的正電勢而損失的偏壓，也就是說，雖然正電勢會減小晶圓表面的負偏壓，但是負偏壓的減小量與負偏壓的增大量基本持平，從而可以使負偏壓保持在預設範圍內，進而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。The beneficial effects of the present invention: In the technical solutions of the bias voltage modulation method, the bias voltage modulation system, and the plasma processing device provided by the present invention, the output voltage of the bias radio frequency source is increased during the bias power loading period to the susceptor. The output voltage is increased from the initial voltage value to the target voltage value. As the output voltage of the bias radio frequency source gradually increases, the negative bias voltage generated on the surface of the workpiece to be processed gradually increases, and the increase in the negative bias voltage can fully or partially compensate for the gradually accumulated on the surface of the workpiece to be processed The bias voltage lost by the positive potential generated by the positive ions, that is, although the positive potential reduces the negative bias voltage on the wafer surface, the decrease in the negative bias voltage is basically the same as the increase in the negative bias voltage, so Keeping the negative bias voltage within the preset range can not only avoid the reduction of the plasma processing rate and ensure the productivity, but also ensure that the surface of the workpiece to be processed can be fully processed to meet the requirements of electrical performance.

為使本領域的技術人員更好地理解本發明的技術方案，下面結合附圖和具體實施方式對本發明提供的偏壓調製方法、偏壓調製系統和電漿處理裝置作進一步詳細描述。 實施例1： 本實施例提供一種偏壓調製方法，包括：In order to enable those skilled in the art to better understand the technical solutions of the present invention, the bias modulation method, the bias modulation system and the plasma processing device provided by the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. Embodiment 1: This embodiment provides a bias voltage modulation method, including:

在向用於承載待加工工件的基座加載偏壓功率期間，增大偏壓射頻源的輸出電壓，以使該輸出電壓由初始電壓值增加至目標電壓值，從而使在待加工工件表面上產生的負偏壓在向基座加載偏壓功率期間保持在預設範圍內。During the loading of bias power to the base for carrying the workpiece to be processed, the output voltage of the bias radio frequency source is increased to increase the output voltage from the initial voltage value to the target voltage value, so that the surface of the workpiece to be processed The generated negative bias voltage is maintained within a preset range during the bias power applied to the base.

其中，所謂預設範圍，是指允許偏壓功率的波動範圍，滿足：保持到達待加工工件表面的正離子具有一定的數量和速率，從而確保電漿處理速率在合適的製程範圍內。Among them, the so-called preset range refers to the allowable bias power fluctuation range, which satisfies: maintaining a certain number and rate of positive ions reaching the surface of the workpiece to be processed, thereby ensuring that the plasma processing rate is within a proper process range.

由於偏壓射頻源的輸出電壓逐漸增大，這使得在待加工工件表面上產生的負偏壓逐漸增大，而負偏壓的增大量能夠部分或全部補償因累積到待加工工件表面的正離子產生的正電勢而損失的偏壓，也就是說，雖然正電勢會減小晶圓表面的負偏壓，但是負偏壓的減小量與負偏壓的增大量基本持平，從而可以使負偏壓保持在預設範圍內，進而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。As the output voltage of the biased radio frequency source gradually increases, the negative bias voltage generated on the surface of the workpiece to be processed gradually increases, and the increase in the negative bias voltage can partially or fully compensate for the positive accumulation on the surface of the workpiece to be processed. The bias voltage lost by the positive potential generated by the ions, that is, although the positive potential reduces the negative bias voltage on the wafer surface, the decrease in the negative bias voltage is basically the same as the increase in the negative bias voltage, which can make The negative bias voltage is kept within the preset range, which can not only avoid the reduction of plasma processing rate and ensure productivity, but also ensure that the surface of the workpiece to be processed can be fully processed to meet the requirements of electrical performance.

可選的，目標電壓值與初始電壓值的差值等於負偏壓損失值，該負偏壓損失值為在向用於基座加載偏壓功率期間，偏壓射頻源的輸出電壓保持該初始電壓值不變時，在待加工工件表面上產生的負偏壓的損失值。如此設置，能使待加工工件表面增加的負偏壓恰好補償因累積到待加工工件表面的正離子產生的正電勢而損失的偏壓，從而使待加工工件表面的負偏壓保持在恒定的初始電壓水準，進而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。Optionally, the difference between the target voltage value and the initial voltage value is equal to the negative bias loss value, and the negative bias loss value is during the period when the bias power is applied to the base, the output voltage of the bias radio frequency source maintains the initial When the voltage value does not change, the negative bias voltage loss value generated on the surface of the workpiece to be processed. With this arrangement, the negative bias voltage added to the surface of the workpiece to be processed can just compensate for the bias voltage lost due to the positive potential generated by the positive ions accumulated on the surface of the workpiece to be processed, so that the negative bias voltage on the surface of the workpiece to be processed is kept constant The initial voltage level can not only avoid the reduction of the plasma processing rate and ensure the productivity, but also ensure that the surface of the workpiece to be processed can be fully processed to meet the electrical performance requirements.

需要說明的是，目標電壓值與初始電壓值的差值也可以大於或者小於上述負偏壓損失值，只要使待加工工件表面的負偏壓保持在預設範圍即可。It should be noted that the difference between the target voltage value and the initial voltage value can also be greater or less than the negative bias voltage loss value, as long as the negative bias voltage on the surface of the workpiece to be processed is maintained within a preset range.

在先前技術中，偏壓射頻源輸出的是正弦連續波，但是，當蝕刻製程的特徵尺度在20nm以下時，採用連續波的電漿在進行蝕刻製程時會對裝置造成損傷，影響裝置的電學性能。解決該問題的方案可以是按脈衝週期向基座加載偏壓功率。具體地，脈衝週期包括脈衝開啟時間和脈衝關閉時間，在脈衝開啟時間，向基座加載偏壓功率，同時增大偏壓射頻源的輸出電壓，以使輸出電壓由初始電壓值增加至目標電壓值；在脈衝關閉時間，停止向基座加載偏壓功率。In the prior art, the biased radio frequency source outputs a sinusoidal continuous wave. However, when the characteristic scale of the etching process is below 20nm, the continuous wave plasma will cause damage to the device during the etching process and affect the electrical system of the device. performance. The solution to this problem may be to apply bias power to the susceptor according to the pulse period. Specifically, the pulse period includes the pulse on time and the pulse off time. During the pulse on time, bias power is applied to the base while increasing the output voltage of the bias RF source to increase the output voltage from the initial voltage value to the target voltage Value; at the pulse off time, stop applying bias power to the base.

由於在脈衝關閉時間，停止向基座加載偏壓功率，電漿中的電子會降落到晶片表面中和在脈衝開啟時間累積的正離子，從而晶片表面累積的正電勢，進而可以進一步減少偏壓的損失。Since the application of bias power to the susceptor is stopped during the pulse off time, the electrons in the plasma will fall on the wafer surface and the positive ions accumulated during the pulse on time, thereby accumulating positive potential on the wafer surface, which can further reduce the bias voltage Loss.

偏壓射頻源能夠按脈衝週期向基座加載偏壓功率，例如脈衝調製射頻源。The bias radio frequency source can load the bias power to the base according to the pulse period, such as a pulse modulated radio frequency source.

在本實施例中，如第2圖所示，偏壓射頻源為脈衝調製射頻源，其中，脈衝週期T包括脈衝開啟時間T1和脈衝關閉時間T2，在脈衝開啟時間T1，偏壓射頻源的輸出電壓由初始電壓值V1增加至目標電壓值V2。 在本實施例中，如第3圖所示，在脈衝開啟時間向該基座加載偏壓功率，具體包括以下步驟：In this embodiment, as shown in Figure 2, the biased radio frequency source is a pulse modulated radio frequency source, where the pulse period T includes a pulse on time T1 and a pulse off time T2. At the pulse on time T1, the biased radio frequency source The output voltage is increased from the initial voltage value V1 to the target voltage value V2. In this embodiment, as shown in Figure 3, applying bias power to the susceptor during the pulse on time specifically includes the following steps:

步驟S101：檢測並記錄t=0時，在待加工工件表面上產生的第一偏壓V0 ；該第一偏壓V0 等於初始電壓值。Step S101: Detect and record the first bias voltage V 0 generated on the surface of the workpiece to be processed when t=0; the first bias voltage V 0 is equal to the initial voltage value.

步驟S102：檢測並記錄在當前的脈衝開啟時間的tn時刻，在待加工工件表面上產生的第二偏壓Vn；其中， tn=n(T1/N) N≥100，且N為整數；1≤n≤N，且n為整數；T1為該脈衝開啟時間的長度； 當n=N時，在tn時刻，偏壓射頻源的輸出電壓為目標電壓值。Step S102: Detect and record the second bias voltage Vn generated on the surface of the workpiece to be processed at time tn of the current pulse on time; where tn=n(T1/N) N≥100, and N is an integer; 1 ≤n≤N, and n is an integer; T1 is the length of the pulse on time; when n=N, at the time tn, the output voltage of the bias RF source is the target voltage value.

步驟S103：計算第二偏壓Vn與第一偏壓第三偏壓V’n-1的差值V。Step S103: Calculate the difference V between the second bias voltage Vn and the first bias voltage V'n-1.

其中，第三偏壓V’n-1為在上一時刻完成偏壓補償後在待加工工件表面上產生的偏壓；由於在執行n=1的第一次迴圈時，上一時刻為t=0時刻，未執行偏壓補償操作，故規定第三偏壓V0 '在數值上等於第一偏壓V0 。Among them, the third bias voltage V'n-1 is the bias voltage generated on the surface of the workpiece to be processed after the bias compensation is completed at the previous moment; because when the first loop with n=1 is performed, the previous moment is At t=0, the bias compensation operation is not performed, so it is stipulated that the third bias voltage V 0 ′ is equal to the first bias voltage V 0 in value.

步驟S104：將在當前的脈衝開啟時間的tn時刻偏壓射頻源的輸出電壓即時調整為tn-1時刻偏壓射頻源的輸出電壓與差值V之和。Step S104: Adjust the output voltage of the biased radio frequency source at time tn of the current pulse on time to the sum of the output voltage of the biased radio frequency source at time tn-1 and the difference V.

步驟S105：檢測並記錄完成偏壓補償後在該待加工工件表面上產生的第三偏壓Vn ’。Step S105: Detect and record the third bias voltage V n ′ generated on the surface of the workpiece to be processed after the bias voltage compensation is completed.

步驟S106：判斷n是否等於N。如果是，則步驟結束。如果否，則將n替換為n+1，並依次執行步驟S102至步驟S106。Step S106: Determine whether n is equal to N. If it is, the step ends. If not, replace n with n+1, and execute step S102 to step S106 in sequence.

由上可知。從n=1，循環往復執行步驟S102至步驟S106，直至n=N，上述步驟結束，即脈衝關閉。脈衝關閉前一時刻的實際電壓即為脈衝開啟時間最後時刻的目標電壓值。脈衝關閉之後，電子進入蝕刻槽底部，中和正電荷，使晶片表面偏壓恢復為0V。It can be seen from the above. From n=1, step S102 to step S106 are executed cyclically until n=N, the above steps are over, that is, the pulse is turned off. The actual voltage at the moment before the pulse is turned off is the target voltage at the last moment of the pulse on time. After the pulse is turned off, electrons enter the bottom of the etching groove to neutralize the positive charge and restore the bias voltage of the wafer surface to 0V.

上述按脈衝週期向該基座加載偏壓功率的方法可實現在製程過程中對晶片表面上產生的偏壓進行即時動態調整補償，使晶片表面達到如第4圖所示的補償效果。其中，N值越大，補償效果越好。The above method of applying bias power to the susceptor according to the pulse period can realize real-time dynamic adjustment and compensation of the bias voltage generated on the wafer surface during the manufacturing process, so that the wafer surface can achieve the compensation effect shown in FIG. 4. Among them, the larger the value of N, the better the compensation effect.

其中，上述各迴圈中第二偏壓的檢測與輸出電壓由初始電壓值增加至目標電壓值是在相同的製程條件下進行，即，該檢測與電壓的增大過程是在相同的脈衝開啟時間，相同的脈衝功率和脈衝占空比，以及相同的初始電壓值下進行，以確保檢測獲得的待加工工件表面損失的偏壓恰好等於待加工工件表面損失的偏壓的補償量，從而使待加工工件表面的負偏壓保持在恒定的初始電壓水準，進而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。Wherein, the detection of the second bias voltage in each of the above cycles and the increase of the output voltage from the initial voltage value to the target voltage value are performed under the same process conditions, that is, the detection and the voltage increase process are turned on at the same pulse Time, the same pulse power and pulse duty ratio, and the same initial voltage value to ensure that the bias voltage of the surface loss of the workpiece to be processed is exactly equal to the compensation amount of the bias voltage of the surface loss of the workpiece to be processed, so that The negative bias voltage of the surface of the workpiece to be processed is maintained at a constant initial voltage level, which can not only avoid the reduction of plasma processing rate and ensure the productivity, but also ensure that the surface of the workpiece to be processed can be fully processed to meet the electrical performance requirements.

可選地，如第2圖所示，在向基座加載偏壓功率期間，例如，在脈衝開啟時間T1內，偏壓射頻源的輸出電壓呈線性增加。當偏壓射頻源輸出的脈衝波形為方波時，待加工工件上的正電荷積累基本呈線性趨勢，因此，通過使偏壓射頻源的輸出電壓呈線性增加，能夠相應地對線性增加的正電荷進行抵消，從而使待加工工件上獲得滿足要求的負偏壓水準。Optionally, as shown in Fig. 2, during the period when the bias power is applied to the susceptor, for example, during the pulse on time T1, the output voltage of the bias radio frequency source increases linearly. When the pulse waveform output by the biased radio frequency source is a square wave, the positive charge accumulation on the workpiece to be processed is basically a linear trend. Therefore, by making the output voltage of the biased radio frequency source linearly increase, the linearly increasing positive charge can be corrected accordingly. The charges are offset, so that the negative bias level that meets the requirements is obtained on the workpiece to be processed.

其中，偏壓射頻源的輸出電壓的初始電壓值為Vs，目標電壓值為Vt。偏壓射頻源的輸出電壓呈線性增大的斜率為： K= tanθ=（Vt-Vs）/T1； 其中，Vt為目標電壓值，Vs為初始電壓值，T1為脈衝開啟時間。上述斜率K越大，則說明偏壓射頻源的輸出電壓增加的速度越快；反之，上述斜率K越小，則說明偏壓射頻源的輸出電壓增加的速度越慢。Wherein, the initial voltage value of the output voltage of the bias radio frequency source is Vs, and the target voltage value is Vt. The output voltage of the bias RF source has a linear increase slope: K=tanθ=(Vt-Vs)/T1; Among them, Vt is the target voltage value, Vs is the initial voltage value, and T1 is the pulse on time. The larger the above-mentioned slope K, the faster the output voltage of the biased RF source increases; on the contrary, the smaller the above-mentioned slope K, the slower the increase of the output voltage of the biased RF source.

以偏壓射頻源輸出脈衝的電感耦合電漿蝕刻裝置為例，偏壓射頻源為可輸出如第2圖所示波形的新型脈衝調製射頻源。脈衝調製射頻源用於向基座加載負偏壓，以使置於基座上的待蝕刻晶片表面產生負偏壓，以吸引電漿向待蝕刻晶片表面轟擊。Take an inductively coupled plasma etching device that outputs pulses from a biased radio frequency source as an example. The biased radio frequency source is a new type of pulse modulated radio frequency source that can output the waveform shown in Figure 2. The pulse modulated radio frequency source is used to load a negative bias voltage on the susceptor, so that the surface of the wafer to be etched placed on the susceptor generates a negative bias to attract plasma to bombard the surface of the wafer to be etched.

如第4圖所示，在進行蝕刻製程的過程中，脈衝調製射頻源輸出脈衝頻率為50Hz，占空比為60%，初始電壓值Vs為300V。當脈衝的占空比設定為60%時，脈衝開啟和關閉階段待蝕刻晶片表面偏壓由300V降低至200V，即偏壓損失了100V。因此，為了對待蝕刻晶片表面的偏壓損失進行補償，脈衝調製射頻源輸出的目標電壓值Vt應增加為400V，以補償上述損失的100V偏壓，即脈衝調製射頻源輸出的初始電壓值Vs與目標電壓值Vt的電壓比Vr為0.75。此時，偏壓射頻源輸出的脈衝調製波形及對應的待蝕刻晶片表面的負偏壓如第4圖所示。脈衝開啟階段（Pulse on），輸出偏壓由300V線性增加至400V，線性增加斜率tanθ= (400V-300V)/12ms，從而補償了待蝕刻晶片表面因正電荷積累造成的負偏壓損失，使得待蝕刻晶片表面偏壓維持在初始電壓值Vs水準不變，從而使待加工工件表面的負偏壓保持在恒定的初始電壓水準，進而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。As shown in Figure 4, during the etching process, the pulse frequency of the pulse modulated radio frequency source is 50 Hz, the duty cycle is 60%, and the initial voltage value Vs is 300V. When the duty cycle of the pulse is set to 60%, the bias voltage of the wafer surface to be etched during the pulse turn-on and turn-off phase is reduced from 300V to 200V, that is, the bias voltage loses 100V. Therefore, in order to compensate for the bias voltage loss on the surface of the wafer to be etched, the target voltage value Vt output by the pulse modulation radio frequency source should be increased to 400V to compensate for the loss of 100V bias voltage, that is, the initial voltage value Vs output by the pulse modulation radio frequency source and The voltage ratio Vr of the target voltage value Vt is 0.75. At this time, the pulse modulation waveform output by the bias RF source and the corresponding negative bias voltage on the surface of the wafer to be etched are shown in Figure 4. In the pulse on phase (Pulse on), the output bias voltage is linearly increased from 300V to 400V, and the linear increase slope tanθ= (400V-300V)/12ms, thus compensating the negative bias voltage loss caused by the accumulation of positive charges on the surface of the wafer to be etched, so that The surface bias voltage of the wafer to be etched remains unchanged at the initial voltage value Vs, so that the negative bias voltage on the surface of the workpiece to be processed is maintained at a constant initial voltage level, thereby not only avoiding the reduction of plasma processing rate, ensuring productivity, but also ensuring The surface of the workpiece to be processed can be fully processed so that its electrical performance meets the requirements.

在脈衝關閉階段（Pulse off），自由電子進入待蝕刻晶片表面的蝕刻槽中和其中的正電荷，使得待蝕刻晶片表面恢復到零電勢；如此反覆。從第4圖中可以看出在脈衝開啟時間內，對脈衝進行調製之後解決了待蝕刻晶片表面由於正電荷積累造成的負偏壓下降問題，從而相對先前技術保持了預期的蝕刻速率，進而保證了晶片的產能。In the pulse off phase (Pulse off), free electrons enter the etching groove on the surface of the wafer to be etched and the positive charges therein, so that the surface of the wafer to be etched returns to zero potential; and so on. It can be seen from Figure 4 that during the pulse on time, the modulation of the pulse solves the problem of the negative bias voltage drop caused by the accumulation of positive charges on the surface of the wafer to be etched, thereby maintaining the expected etching rate compared with the prior art, thereby ensuring Increase the production capacity of wafers.

需要說明的是，在脈衝的開啟時間T1內，輸出的脈衝電壓也可以非線性增加。非線性增加的電壓能夠相應地對非線性增加的積累正電荷進行抵消，從而使待處理晶片上獲得滿足要求的負偏壓水準。It should be noted that during the on-time T1 of the pulse, the output pulse voltage can also increase non-linearly. The non-linearly increased voltage can correspondingly offset the non-linearly increased accumulated positive charge, so that a satisfactory negative bias level can be obtained on the wafer to be processed.

可選的，如第2圖所示，初始電壓值Vs與目標電壓值Vt的比值的取值範圍在0.1-0.9。在該範圍內調整初始電壓值Vs與目標電壓值Vt的比值，可以實現對待處理晶片表面偏壓損失的適當補償，從而能夠根據對待處理晶片的不同的處理製程目標要求，對待處理晶片的處理速率進行調控，進而實現對晶片處理速率的精確調控，提升晶片處理品質，保證晶片產能。Optionally, as shown in Figure 2, the ratio of the initial voltage value Vs to the target voltage value Vt ranges from 0.1 to 0.9. Adjusting the ratio of the initial voltage value Vs to the target voltage value Vt within this range can achieve proper compensation for the surface bias loss of the wafer to be processed, so that the processing rate of the wafer to be processed can be based on the target requirements of different processing processes of the wafer to be processed Carry out regulation, and then realize the precise regulation of wafer processing rate, improve wafer processing quality, and ensure wafer production capacity.

在本實施例中，偏壓射頻源為脈衝調製射頻源，其輸出的脈衝的脈衝頻率f=1/(T1+T2)，且脈衝頻率f的調整範圍為10Hz-20KHz。脈衝的占空比D=T1/(T1+T2)調整範圍為10%-90%。脈衝調製射頻源的射頻頻率為2MHz、13.56MHz或60MHz等 。本實施例中的偏壓調製方法不僅適用於電感耦合電漿處理製程（ICP），而且適用於電容耦合電漿處理製程(CCP)、微波電漿處理製程和微波電子迴旋共振電漿處理製程(ECR)。In this embodiment, the bias radio frequency source is a pulse modulated radio frequency source, the pulse frequency f=1/(T1+T2) of the output pulse, and the adjustment range of the pulse frequency f is 10Hz-20KHz. The pulse duty cycle D=T1/(T1+T2), the adjustment range is 10%-90%. The RF frequency of the pulse modulated RF source is 2MHz, 13.56MHz or 60MHz, etc. The bias modulation method in this embodiment is not only suitable for inductively coupled plasma processing (ICP), but also for capacitively coupled plasma processing (CCP), microwave plasma processing and microwave electron cyclotron resonance plasma processing ( ECR).

綜上所述，本發明實施例提供的偏壓調製方法、偏壓調製系統和電漿處理裝置的技術方案中，在向基座加載偏壓功率期間，增大偏壓射頻源的輸出電壓，以使該輸出電壓由初始電壓值增加至目標電壓值。由於偏壓射頻源的輸出電壓逐漸增大，這使得在待加工工件表面上產生的負偏壓逐漸增大，而負偏壓的增大量能夠全部或部分補償因逐漸累積到待加工工件表面的正離子產生的正電勢而損失的偏壓，也就是說，雖然正電勢會減小晶圓表面的負偏壓，但是負偏壓的減小量與負偏壓的增大量基本持平，從而可以使負偏壓保持在預設範圍內，進而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。 實施例2：In summary, in the technical solutions of the bias voltage modulation method, the bias voltage modulation system, and the plasma processing device provided by the embodiments of the present invention, the output voltage of the bias radio frequency source is increased during the bias power is applied to the base, In order to increase the output voltage from the initial voltage value to the target voltage value. As the output voltage of the bias radio frequency source gradually increases, the negative bias voltage generated on the surface of the workpiece to be processed gradually increases, and the increase in the negative bias voltage can fully or partially compensate for the gradually accumulated on the surface of the workpiece to be processed The bias voltage lost by the positive potential generated by the positive ions, that is, although the positive potential reduces the negative bias voltage on the wafer surface, the decrease in the negative bias voltage is basically the same as the increase in the negative bias voltage, so Keeping the negative bias voltage within the preset range can not only avoid the reduction of the plasma processing rate and ensure the productivity, but also ensure that the surface of the workpiece to be processed can be fully processed to meet the requirements of electrical performance. Example 2:

本實施例提供一種偏壓調製系統，如第5圖所示，用於對放置在基座10表面的待加工工件的負偏壓進行調製。該偏壓調製系統包括偏壓射頻源7和電壓調整模組,其中，偏壓射頻源7與用於承載待加工工件的基座10電連接，用於向基座10加載偏壓功率，以使待加工工件的表面產生負偏壓。電壓調整模組9與偏壓射頻源7電連接，用於在偏壓射頻源向該基座加載偏壓功率期間，增大偏壓射頻源的輸出電壓，以使輸出電壓由初始電壓值增加至目標電壓值，從而使在待加工工件表面上產生的負偏壓在偏壓射頻源向基座加載偏壓功率期間保持在預設範圍。This embodiment provides a bias voltage modulation system, as shown in FIG. 5, for modulating the negative bias voltage of the workpiece to be processed placed on the surface of the base 10. The bias modulation system includes a bias radio frequency source 7 and a voltage adjustment module. The bias radio frequency source 7 is electrically connected to a base 10 for carrying a workpiece to be processed, and is used to load bias power on the base 10 to A negative bias is generated on the surface of the workpiece to be processed. The voltage adjustment module 9 is electrically connected to the bias radio frequency source 7, and is used to increase the output voltage of the bias radio frequency source during the period when the bias radio frequency source loads the bias power to the base, so that the output voltage increases from the initial voltage value To the target voltage value, so that the negative bias voltage generated on the surface of the workpiece to be processed is maintained in the preset range during the biasing of the biasing radio frequency source to the base.

借助電壓調整模組9，可以使得在待加工工件表面上產生的負偏壓逐漸增大，而負偏壓的增大量能夠全部或部分補償因逐漸累積到待加工工件表面的正離子產生的正電勢而損失的偏壓，也就是說，雖然正電勢會減小晶圓表面的負偏壓，但是負偏壓的減小量與負偏壓的增大量基本持平，從而可以使負偏壓保持在預設範圍內，進而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。With the help of the voltage adjustment module 9, the negative bias voltage generated on the surface of the workpiece to be processed can be gradually increased, and the increase in the negative bias voltage can fully or partially compensate for the positive ions that gradually accumulate on the surface of the workpiece to be processed. Bias voltage lost by potential, that is, although the positive potential will reduce the negative bias on the wafer surface, the decrease in the negative bias is basically the same as the increase in the negative bias, so that the negative bias can be maintained Within the preset range, not only can the plasma processing rate be avoided and the productivity can be ensured, but also the surface of the workpiece to be processed can be fully processed, so that its electrical performance can meet the requirements.

其中，待加工工件為待處理晶片4。Among them, the workpiece to be processed is the wafer 4 to be processed.

在本實施例中，如第5圖所示，電壓調整模組9包括時鐘產生器91、電壓感測器92和數位處理器93，其中，時鐘產生器91能夠發出與偏壓射頻源同步的時鐘訊號。電壓感測器92與時鐘產生器91進行通訊，以能夠在脈衝開啟時間內檢測在待加工工件表面上產生的負偏壓。數位處理器93與電壓感測器92進行通訊，用於接收來自電壓感測器92發送的負偏壓，並根據該負偏壓計算獲得輸出電壓調整值，並將偏壓射頻源的輸出電壓調整為輸出電壓調整值，以使在待加工工件表面上產生的負偏壓在向基座加載偏壓功率期間保持在預設值。In this embodiment, as shown in Figure 5, the voltage adjustment module 9 includes a clock generator 91, a voltage sensor 92, and a digital processor 93. The clock generator 91 can send out signals synchronized with a biased radio frequency source. Clock signal. The voltage sensor 92 communicates with the clock generator 91 to be able to detect the negative bias voltage generated on the surface of the workpiece to be processed within the pulse on time. The digital processor 93 communicates with the voltage sensor 92 for receiving the negative bias voltage sent from the voltage sensor 92, calculating the output voltage adjustment value according to the negative bias voltage, and biasing the output voltage of the radio frequency source Adjust to the output voltage adjustment value so that the negative bias voltage generated on the surface of the workpiece to be processed is maintained at a preset value during the bias power is applied to the base.

其中，電壓感測器92檢測t=0時，在待加工工件表面上產生的第一偏壓V0 ；該第一偏壓V0 等於該初始電壓值，和檢測在當前的脈衝開啟時間的tn時刻，在該待加工工件表面上產生的第二偏壓Vn；其中， tn=n(T1/N) N≥100，且N為整數；1≤n≤N，且n為整數；T1為脈衝開啟時間的長度； 當n=N時，在tn時刻，偏壓射頻源的輸出電壓為目標電壓值；以及檢測並記錄完成偏壓補償後在待加工工件表面上產生的第三偏壓Vn ’。Wherein, the voltage sensor 92 detects the first bias voltage V 0 generated on the surface of the workpiece to be processed when t=0; the first bias voltage V 0 is equal to the initial voltage value, and detects the current pulse on time At tn, the second bias voltage Vn generated on the surface of the workpiece to be processed; where tn=n(T1/N) N≥100, and N is an integer; 1≤n≤N, and n is an integer; T1 is The length of the pulse on time; when n=N, at tn, the output voltage of the bias RF source is the target voltage value; and the third bias voltage V generated on the surface of the workpiece to be processed after the bias compensation is detected and recorded n '.

數位處理器93接收並記錄來自電壓感測器92發送的第一偏壓V0 、該第二偏壓Vn和該第三偏壓Vn ’，並執行： 計算第二偏壓Vn與第三偏壓Vn-1 ’的差值V；其中，該第三偏壓Vn-1 ’為在上一時刻完成偏壓補償後在待加工工件表面上產生的偏壓；V0 '等於第一偏壓V0 。The digital processor 93 receives and records the first bias voltage V 0 , the second bias voltage Vn and the third bias voltage V n ′ sent from the voltage sensor 92, and executes: calculate the second bias voltage Vn and the third bias voltage Vn The difference V of the bias voltage V n-1 ′; wherein, the third bias voltage V n-1 ′ is the bias voltage generated on the surface of the workpiece to be processed after the bias compensation is completed at the previous moment; V 0 ′ is equal to the first A bias voltage V 0 .

然後，數位處理器93將在當前的脈衝開啟時間的tn時刻偏壓射頻源的輸出電壓即時調整為tn-1時刻偏壓射頻源的輸出電壓與差值V之和。Then, the digital processor 93 instantly adjusts the output voltage of the biased radio frequency source at time tn of the current pulse on time to the sum of the output voltage of the biased radio frequency source at time tn-1 and the difference V.

之後，數位處理器93判斷n是否等於N，如果是，則指令電壓感測器92停止檢測工作，和停止調整偏壓射頻源的輸出電壓；如果否，則控制電壓感測器82繼續檢測工作，和即時調整偏壓射頻源的輸出電壓。After that, the digital processor 93 judges whether n is equal to N, and if so, the voltage sensor 92 is instructed to stop the detection work and stop adjusting the output voltage of the bias RF source; if not, the voltage sensor 82 is controlled to continue the detection work , And instantly adjust the output voltage of the bias RF source.

其中，時鐘產生器91用於產生方波脈衝，方波脈衝的脈衝週期為T1/N。偏壓射頻源7為可輸出如第2圖所示波形的新型脈衝調製射頻源。時鐘產生器91產生的方波脈衝輸入至電壓感測器92中。其中N為大於0的整數，為保證電壓補償的及時性和有效性，一般選取N≥100，N值越大，補償效果越好。電壓感測器92負責進行晶片4表面第一偏壓和第二偏壓的檢測，其進行檢測的時刻由時鐘產生器91輸出的方波脈衝控制，可設置為脈衝上升沿或下降沿觸發檢測動作，其中，n為時鐘產生器91方波脈衝的計數值。數位處理器93負責對電壓感測器92的檢測數據進行接收、記錄和運算，其運算的結果回饋至偏壓射頻源7，使得偏壓射頻源7可根據回饋的結果即時進行輸出脈衝電壓的調整。Among them, the clock generator 91 is used to generate a square wave pulse, and the pulse period of the square wave pulse is T1/N. The bias radio frequency source 7 is a new type of pulse modulated radio frequency source that can output the waveform shown in FIG. 2. The square wave pulse generated by the clock generator 91 is input to the voltage sensor 92. Among them, N is an integer greater than 0. To ensure the timeliness and effectiveness of voltage compensation, N≥100 is generally selected. The larger the value of N, the better the compensation effect. The voltage sensor 92 is responsible for the detection of the first and second bias voltages on the surface of the wafer 4. The detection time is controlled by the square wave pulse output by the clock generator 91, which can be set to trigger detection on the rising or falling edge of the pulse Action, where n is the count value of the square wave pulse of the clock generator 91. The digital processor 93 is responsible for receiving, recording, and calculating the detection data of the voltage sensor 92, and the result of the calculation is fed back to the biased radio frequency source 7, so that the biased radio frequency source 7 can instantly output pulse voltage according to the feedback result Adjustment.

在本實施例中，通過電壓調整模組9中的各裝置按脈衝週期向基座加載偏壓功率的具體過程為：偏壓射頻源7與時鐘產生器92同時輸出脈衝，假設偏壓射頻源7起始輸出電壓為(Vs)0=V0′ ，開始的瞬間（t=0），電壓感測器92檢測當前晶片4表面的第一偏壓V0=(Vs)0 =V0′，並輸送到數位處理器93中進行記錄保存。In this embodiment, the specific process of applying bias power to the base according to the pulse period through each device in the voltage adjustment module 9 is: the bias radio frequency source 7 and the clock generator 92 output pulses simultaneously, assuming the bias radio frequency source 7 The initial output voltage is (Vs)0=V0′, at the beginning (t=0), the voltage sensor 92 detects the current first bias voltage V0=(Vs)0=V0′ on the surface of the wafer 4 and sends it To the digital processor 93 to record and save.

假設n為大於0的整數，初始值為1，n值可以改變，並保存在數位處理器93中。時鐘產生器91輸出的下一個脈衝上升沿/下降沿到來時，即t=n*(T1/N)時刻（n=1），電壓感測器92的檢測動作被觸發，檢測得到晶片4表面的第二偏壓V1，並將此結果發送至數位處理器93中。數位處理器93對檢測結果進行運算，得到V= V1- V0′ ，V即為需要補償的電壓，並將結果V回饋至偏壓射頻源7中，偏壓射頻源7根據回饋結果進行即時的輸出電壓調整(Vs)1=(Vs)0+V。如此循環往復，直至n=N，脈衝關閉。脈衝關閉前一時刻偏壓射頻源7輸出的電壓即為脈衝開啟時間內最後時刻的目標電壓 。脈衝關閉後，電子進入蝕刻槽底部，中和正電荷，使晶片4偏壓恢復為0V。Assuming that n is an integer greater than 0, the initial value is 1, and the value of n can be changed and stored in the digital processor 93. When the next rising/falling edge of the pulse output by the clock generator 91 arrives, that is, t=n*(T1/N) (n=1), the detection action of the voltage sensor 92 is triggered, and the surface of the wafer 4 is detected And send the result to the digital processor 93. The digital processor 93 performs calculations on the detection results to obtain V=V1-V0′, where V is the voltage to be compensated, and feeds the result V to the biased radio frequency source 7, and the biased radio frequency source 7 performs real-time based on the feedback result Output voltage adjustment (Vs)1=(Vs)0+V. This cycle repeats until n=N and the pulse is turned off. The voltage output by the bias RF source 7 at the moment before the pulse is turned off is the target voltage at the last moment during the pulse on time. After the pulse is turned off, electrons enter the bottom of the etching groove, neutralize the positive charge, and restore the bias voltage of the wafer 4 to 0V.

該射頻脈衝調製系統可實現製程過程中晶片4表面偏壓的即時動態補償，達到如第4圖所示的補償效果。The RF pulse modulation system can realize real-time dynamic compensation of the surface bias of the wafer 4 during the manufacturing process, and achieve the compensation effect shown in FIG. 4.

本實施例中的偏壓調製系統，通過設置電壓調整模組，可以使得在待加工工件表面上產生的負偏壓逐漸增大，而負偏壓的增大量能夠全部或部分補償因逐漸累積到待加工工件表面的正離子產生的正電勢而損失的偏壓，也就是說，雖然正電勢會減小晶圓表面的負偏壓，但是負偏壓的減小量與負偏壓的增大量基本持平，從而可以使負偏壓保持在預設範圍內，進而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。 實施例3：The bias voltage modulation system in this embodiment, by setting the voltage adjustment module, can make the negative bias voltage generated on the surface of the workpiece to be processed gradually increase, and the increase in the negative bias voltage can be fully or partially compensated for the gradually accumulated The bias voltage lost due to the positive potential generated by the positive ions on the surface of the workpiece to be processed, that is, although the positive potential will reduce the negative bias voltage on the wafer surface, the decrease in the negative bias and the increase in the negative bias It is basically flat, so that the negative bias voltage can be kept within the preset range, which can not only avoid the reduction of the plasma processing rate and ensure the productivity, but also ensure that the surface of the workpiece to be processed can be fully processed to meet the electrical performance requirements. Example 3:

本實施例提供一種電漿處理裝置，包括用於承載待加工工件的基座，以及上述實施例2中的偏壓調製系統，該偏壓調製系統與基座電連接。This embodiment provides a plasma processing device, which includes a base for carrying a workpiece to be processed, and the bias voltage modulation system in the second embodiment above, and the bias voltage modulation system is electrically connected to the base.

其中，電漿處理裝置還包括電漿產生裝置，其包括線圈和與該線圈連接的上電極射頻源，上電極射頻源為連續波射頻源或脈衝調製射頻源。The plasma processing device further includes a plasma generating device, which includes a coil and an upper electrode radio frequency source connected to the coil, and the upper electrode radio frequency source is a continuous wave radio frequency source or a pulse modulated radio frequency source.

通過採用上述實施例2中的偏壓調製系統，可以使得在待加工工件表面上產生的負偏壓逐漸增大，而負偏壓的增大量能夠全部或部分補償因逐漸累積到待加工工件表面的正離子產生的正電勢而損失的偏壓，也就是說，雖然正電勢會減小晶圓表面的負偏壓，但是負偏壓的減小量與負偏壓的增大量基本持平，從而可以使負偏壓保持在預設範圍內，進而不僅可以避免電漿處理速率降低，保證產能，而且可以保證使待加工工件表面能夠被充分處理，使其電學性能滿足要求。By adopting the bias voltage modulation system in the above-mentioned embodiment 2, the negative bias voltage generated on the surface of the workpiece to be processed can be gradually increased, and the increase in the negative bias voltage can fully or partially compensate for the gradual accumulation on the surface of the workpiece to be processed The positive potential generated by the positive ions and the loss of the bias, that is, although the positive potential will reduce the negative bias on the wafer surface, the decrease in the negative bias is basically the same as the increase in the negative bias, so The negative bias voltage can be kept within the preset range, thereby not only avoiding the reduction of plasma processing rate and ensuring productivity, but also ensuring that the surface of the workpiece to be processed can be fully processed to meet the requirements of electrical performance.

另外，值得注意的是，本發明的偏壓調製方法、偏壓調製系統以及包括該偏壓調製系統的電漿處理裝置，不限於電感耦合電漿產生、電容耦合電漿產生中出現的負偏壓損失的問題，上述設定的電感耦合電漿或電容耦合電漿產生僅為了說明本發明的具體實施方式，並不用於對本發明進行限制。只要存在待加工工件表面的負偏壓損失的問題，那麼就可以採用本發明的偏壓調製方法，偏壓調製系統及電漿處理裝置解決存在的技術問題。In addition, it is worth noting that the bias voltage modulation method, the bias voltage modulation system, and the plasma processing device including the bias voltage modulation system of the present invention are not limited to the negative bias that occurs in inductively coupled plasma generation and capacitively coupled plasma generation. With regard to the problem of pressure loss, the inductively coupled plasma or capacitively coupled plasma generated above is only used to illustrate the specific embodiments of the present invention, and is not used to limit the present invention. As long as there is the problem of the negative bias voltage loss on the surface of the workpiece to be processed, the bias voltage modulation method, the bias voltage modulation system and the plasma processing device of the present invention can be used to solve the existing technical problems.

可以理解的是，以上實施方式僅僅是為了說明本發明的原理而採用的示例性實施方式，然而本發明並不侷限於此。對於本領域內的普通技術人員而言，在不脫離本發明的精神和實質的情況下，可以做出各種變型和改進，這些變型和改進也視為本發明的保護範圍。It can be understood that the above implementations are merely exemplary implementations used to illustrate the principle of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

1‧‧‧射頻天線2‧‧‧介電質視窗3‧‧‧真空腔室4‧‧‧晶片5‧‧‧金屬電極6‧‧‧載片臺7‧‧‧偏壓射頻源8‧‧‧主射頻源T1‧‧‧脈衝開啟時間T2‧‧‧脈衝關閉時間Vs‧‧‧初始電壓Vt‧‧‧目標電壓9‧‧‧電壓調整模組91‧‧‧時鐘產生器92‧‧‧電壓感測器93‧‧‧數位處理器10‧‧‧基座1‧‧‧Radio frequency antenna 2‧‧‧Dielectric window 3‧‧‧Vacuum chamber 4‧‧‧Chip 5‧‧‧Metal electrode 6‧‧‧Carrier 7‧‧‧Biased RF source 8‧‧ ‧Main RF source T1‧‧‧Pulse on time T2‧‧‧Pulse off time Vs‧‧‧Initial voltage Vt‧‧‧Target voltage 9‧‧‧Voltage adjustment module 91‧‧‧Clock generator 92‧‧‧Voltage Sensor 93‧‧‧Digital processor 10‧‧‧Base

第1圖為先前技術中電感耦合半導體蝕刻裝置的結構示意圖； 第2圖為本發明一種實施方式的調製後的脈衝調製射頻源輸出的波形圖； 第3圖為本發明一種實施方式的偏壓調製方法的流程示意圖； 第4圖為本發明一種實施方式的調製後的脈衝調製射頻源輸出的波形及相應的晶片表面的實際負偏壓波形圖； 第5圖為本發明一種實施方式的偏壓調製系統示意圖。Figure 1 is a schematic diagram of the structure of an inductively coupled semiconductor etching apparatus in the prior art; Figure 2 is a waveform diagram of the output of a modulated pulse modulated radio frequency source according to an embodiment of the present invention; Figure 3 is a bias voltage according to an embodiment of the present invention The schematic flow chart of the modulation method; Figure 4 is a waveform diagram of the output waveform of the modulated pulse-modulated radio frequency source and the corresponding actual negative bias voltage waveform diagram of the wafer surface according to an embodiment of the present invention; Figure 5 is a bias diagram of an embodiment of the present invention Schematic diagram of pressure modulation system.

Claims (12)

一種偏壓調製方法，其特徵在於，包括：在向用於承載一待加工工件的一基座加載偏壓功率期間，增大一偏壓射頻源的一輸出電壓，以使該輸出電壓由一初始電壓值增加至一目標電壓值，從而使該待加工工件表面上產生的負偏壓在向該基座加載偏壓功率期間保持在預設範圍內，其中，該目標電壓值與該初始電壓值的差值等於一負偏壓損失值，該負偏壓損失值為在向該基座加載偏壓功率期間，該偏壓射頻源的輸出電壓保持該初始電壓值不變時，在該待加工工件表面上產生的負偏壓的損失值。 A bias modulation method, which is characterized in that it comprises: increasing an output voltage of a bias radio frequency source during the period of applying bias power to a base for carrying a workpiece to be processed, so that the output voltage changes from a The initial voltage value is increased to a target voltage value, so that the negative bias voltage generated on the surface of the workpiece to be processed is maintained within a preset range during the bias power is applied to the base, wherein the target voltage value and the initial voltage The difference between the values is equal to a negative bias loss value, and the negative bias loss value is when the output voltage of the bias radio frequency source remains unchanged at the initial voltage value during the period when the bias power is applied to the base. The loss value of the negative bias voltage generated on the surface of the workpiece. 如申請專利範圍第1項所述之偏壓調製方法，其中，按一脈衝週期向該基座加載偏壓功率；其中，該脈衝週期包括一脈衝開啟時間和一脈衝關閉時間，在該脈衝開啟時間，向該基座加載偏壓功率，同時增大偏壓射頻源的一輸出電壓，以使該輸出電壓由一初始電壓值增加至一目標電壓值；在該脈衝關閉時間，停止向該基座加載偏壓功率。 The bias voltage modulation method described in the first item of the scope of patent application, wherein the bias power is applied to the base according to a pulse period; wherein the pulse period includes a pulse on time and a pulse off time, and the pulse is turned on Time, the bias power is applied to the base, and at the same time an output voltage of the bias radio frequency source is increased, so that the output voltage increases from an initial voltage value to a target voltage value; at the pulse off time, stop feeding the base The seat is loaded with bias power. 如申請專利範圍第2項所述之偏壓調製方法，其中，在該脈衝開啟時間向該基座加載偏壓功率，具體包括以下步驟：步驟S101：檢測並記錄t=0時，在該待加工工件表面上產生的一第一偏壓V0；該第一偏壓V0等於該初始電壓值；步驟S102：檢測並記錄在當前的脈衝開啟時間的tn時刻，在該待加工工件表面上產生的一第二偏壓Vn；其中，tn=n(T1/N) N
Figure 107118360-A0305-02-0021-5
100，且N為整數；1
Figure 107118360-A0305-02-0021-6
n
Figure 107118360-A0305-02-0021-7
N，且n為整數；T1為該脈衝開啟時間的長度；當n=N時，在tn時刻，該偏壓射頻源的輸出電壓為該目標電壓值；步驟S103：計算該第二偏壓Vn與一第三偏壓V’ n-1的一差值V；其中，該第三偏壓V’ n-1為在上一時刻完成偏壓補償後在該待加工工件表面上產生的偏壓；第三偏壓V0'等於第一偏壓V0；步驟S104：將在當前的脈衝開啟時間的tn時刻該偏壓射頻源的輸出電壓即時調整為tn-1時刻該偏壓射頻源的輸出電壓與該差值V之和；步驟S105：檢測並記錄完成偏壓補償後在該待加工工件表面上產生的第三偏壓Vn’；步驟S106：判斷n是否等於N；如果是，則步驟結束；如果否，則將n替換為n+1，並依次執行該步驟S102至步驟S106。 For the bias modulation method described in item 2 of the scope of patent application, wherein the bias power is applied to the base during the pulse on time, specifically including the following steps: Step S101: detecting and recording when t=0 A first bias voltage V 0 generated on the surface of the workpiece to be processed; the first bias voltage V 0 is equal to the initial voltage value; Step S102: Detect and record the current pulse on time tn on the surface of the workpiece to be processed A second bias voltage Vn generated; where tn=n(T1/N) N
Figure 107118360-A0305-02-0021-5
100, and N is an integer; 1
Figure 107118360-A0305-02-0021-6
n
Figure 107118360-A0305-02-0021-7
N, and n is an integer; T1 is the length of the pulse on time; when n=N, at time tn, the output voltage of the bias RF source is the target voltage value; Step S103: Calculate the second bias voltage Vn A difference V with a third bias voltage V'n-1; wherein, the third bias voltage V'n-1 is the bias voltage generated on the surface of the workpiece after the bias compensation is completed at the previous moment ; The third bias voltage V 0 'is equal to the first bias voltage V 0 ; Step S104: Adjust the output voltage of the bias radio frequency source at time tn of the current pulse on time to that of the bias radio frequency source at time tn-1 The sum of the output voltage and the difference V; Step S105: Detect and record the third bias voltage V n ′ generated on the surface of the workpiece to be processed after the bias compensation is completed; Step S106: Determine whether n is equal to N; if so, Then the step ends; if not, replace n with n+1, and execute step S102 to step S106 in sequence. 如申請專利範圍第1項所述之調製方法，其中，該初始電壓值與該目標電壓值的比值的取值範圍在0.1-0.9。 For the modulation method described in item 1 of the scope of the patent application, the ratio of the initial voltage value to the target voltage value ranges from 0.1 to 0.9. 如申請專利範圍第2項所述之調製方法，其中，在向該基座加載偏壓功率期間，該偏壓射頻源的輸出電壓呈線性增大。 In the modulation method described in item 2 of the scope of patent application, the output voltage of the biased radio frequency source increases linearly during the period when the bias power is applied to the base. 如申請專利範圍第5項所述之調製方法，其中，該偏壓射頻源的輸出電壓呈線性增大的斜率為：K=(Vt-Vs)/T1；其中，Vt為該目標電壓值，Vs為該初始電壓值，T1為該脈衝開啟時間。 The modulation method described in item 5 of the scope of patent application, wherein the output voltage of the bias RF source has a linear increase slope: K=(Vt-Vs)/T1; where Vt is the target voltage value, Vs is the initial voltage value, and T1 is the pulse on time. 一種偏壓調製系統，其特徵在於，包括：一偏壓射頻源，該偏壓射頻源與用於承載一待加工工件的一基座電連接，用於向該基座加載偏壓功率； 一電壓調整模組，該電壓調整模組與該偏壓射頻源電連接，用於在該偏壓射頻源向該基座加載偏壓功率期間，增大該偏壓射頻源的一輸出電壓，以使該輸出電壓由一初始電壓值增加至一目標電壓值，從而使在該待加工工件表面上產生的負偏壓在該偏壓射頻源向該基座加載偏壓功率期間保持在預設範圍，其中，該目標電壓值與該初始電壓值的差值等於一負偏壓損失值，該負偏壓損失值為在向該基座加載偏壓功率期間，該偏壓射頻源的輸出電壓保持該初始電壓值不變時，在該待加工工件表面上產生的負偏壓的損失值。 A bias modulation system, characterized by comprising: a bias radio frequency source, the bias radio frequency source is electrically connected to a base for carrying a workpiece to be processed, and is used to load bias power on the base; A voltage adjustment module electrically connected to the bias radio frequency source for increasing an output voltage of the bias radio frequency source during the period when the bias radio frequency source applies bias power to the base, In order to increase the output voltage from an initial voltage value to a target voltage value, the negative bias voltage generated on the surface of the workpiece to be processed is maintained at a preset value during the bias power applied to the base by the bias radio frequency source Range, wherein the difference between the target voltage value and the initial voltage value is equal to a negative bias loss value, and the negative bias loss value is the output voltage of the bias radio frequency source during the period when the bias power is applied to the base When keeping the initial voltage value unchanged, the negative bias voltage loss value generated on the surface of the workpiece to be processed. 如申請專利範圍第7項所述之偏壓調製系統，其中，該偏壓射頻源為一脈衝調製射頻源，以能夠按一脈衝週期向該基座加載偏壓功率；其中，該脈衝週期包括一脈衝開啟時間和一脈衝關閉時間，在該脈衝開啟時間，該偏壓射頻源向該基座加載偏壓功率，同時該電壓調整模組增大偏壓射頻源的一輸出電壓，以使該輸出電壓由一初始電壓值增加至一目標電壓值；在該脈衝關閉時間，該偏壓射頻源停止向該基座加載偏壓功率。 The bias voltage modulation system described in item 7 of the scope of patent application, wherein the bias radio frequency source is a pulse modulated radio frequency source to be able to apply bias power to the base according to a pulse period; wherein, the pulse period includes A pulse on time and a pulse off time. During the pulse on time, the bias radio frequency source loads the bias power to the base, and the voltage adjustment module increases an output voltage of the bias radio frequency source so that the The output voltage is increased from an initial voltage value to a target voltage value; during the pulse off time, the bias radio frequency source stops applying bias power to the base. 如申請專利範圍第8項所述之偏壓調製系統，其中，該電壓調整模組包括：一時鐘產生器，該時鐘產生器能夠發出與該偏壓射頻源同步的時鐘訊號；一電壓感測器，該電壓感測器與該時鐘產生器進行通訊，以能夠在該脈衝開啟時間內檢測在該待加工工件表面上產生的一負偏壓；一數位處理器，該數位處理器與該電壓感測器進行通訊，用於接收來自該電壓感測器發送的該負偏壓，並根據該負偏壓計算獲得一輸出電壓調整值， 並將該偏壓射頻源的輸出電壓調整為該輸出電壓調整值，以使在該待加工工件表面上產生的負偏壓在向該基座加載偏壓功率期間保持在預設值。 For the bias voltage modulation system described in item 8 of the scope of patent application, the voltage adjustment module includes: a clock generator capable of sending out a clock signal synchronized with the bias radio frequency source; and a voltage sensing The voltage sensor communicates with the clock generator to be able to detect a negative bias voltage generated on the surface of the workpiece to be processed during the pulse on time; a digital processor, the digital processor and the voltage The sensor communicates for receiving the negative bias voltage sent from the voltage sensor, and calculating an output voltage adjustment value based on the negative bias voltage, The output voltage of the bias radio frequency source is adjusted to the output voltage adjustment value, so that the negative bias voltage generated on the surface of the workpiece to be processed is maintained at a preset value during the bias power applied to the base. 如申請專利範圍第9項所述之偏壓調製系統，其中，該電壓感測器檢測t=0時，在該待加工工件表面上產生的一第一偏壓V0；該第一偏壓V0等於該初始電壓值；和檢測在當前的一脈衝開啟時間的tn時刻，在該待加工工件表面上產生的一第二偏壓Vn；其中，tn=n(T1/N)N
Figure 107118360-A0305-02-0023-1
100，且N為整數；1
Figure 107118360-A0305-02-0023-2
n
Figure 107118360-A0305-02-0023-3
N，且n為整數；T1為該脈衝開啟時間的長度；當n=N時，在tn時刻，該偏壓射頻源的輸出電壓為該目標電壓值；以及檢測並記錄完成偏壓補償後在該待加工工件表面上產生的一第三偏壓Vn’。 The bias voltage modulation system described in item 9 of the scope of patent application, wherein the voltage sensor detects a first bias voltage V 0 generated on the surface of the workpiece to be processed when t= 0 ; the first bias voltage V 0 is equal to the initial voltage value; and detecting a second bias voltage Vn generated on the surface of the workpiece to be processed at the time tn of the current pulse on time; where tn=n(T1/N)N
Figure 107118360-A0305-02-0023-1
100, and N is an integer; 1
Figure 107118360-A0305-02-0023-2
n
Figure 107118360-A0305-02-0023-3
N, and n is an integer; T1 is the length of the pulse on time; when n=N, at tn, the output voltage of the bias RF source is the target voltage value; and after detecting and recording the bias compensation A third bias voltage V n ′ is generated on the surface of the workpiece to be processed. 如申請專利範圍第10項所述之偏壓調製系統，其中，該數位處理器接收並記錄來自該電壓感測器發送的該第一偏壓V0、該第二偏壓Vn和該第三偏壓Vn’，並執行：計算該第二偏壓Vn與一第三偏壓Vn-1’的一差值V；其中，該第三偏壓Vn-1’為在上一時刻完成偏壓補償後在該待加工工件表面上產生的偏壓；V0'等於第一偏壓V0；將在當前的脈衝開啟時間的tn時刻該偏壓射頻源的輸出電壓即時調整為tn-1時刻該偏壓射頻源的輸出電壓與該差值V之和；判斷n是否等於N；如果是，則控制該電壓感測器停止檢測工作，和停止調整該偏壓射頻源的輸出電壓；如果否，則控制該電壓感測器繼續檢測工作，和即時調整該偏壓射頻源的輸出電壓。 The bias voltage modulation system described in item 10 of the scope of patent application, wherein the digital processor receives and records the first bias voltage V 0 , the second bias voltage Vn and the third bias voltage sent from the voltage sensor Bias voltage V n ′ and execute: calculate a difference V between the second bias voltage Vn and a third bias voltage V n-1 ′; wherein, the third bias voltage V n-1 ′ is at the previous moment The bias voltage generated on the surface of the workpiece to be processed after the bias compensation is completed; V 0 'is equal to the first bias voltage V 0 ; the output voltage of the bias radio frequency source is instantly adjusted to tn at the instant tn of the current pulse on time -1 the sum of the output voltage of the biased RF source and the difference V; judge whether n is equal to N; if so, control the voltage sensor to stop the detection work, and stop adjusting the output voltage of the biased RF source If not, control the voltage sensor to continue the detection work, and adjust the output voltage of the bias RF source immediately. 一種電漿處理裝置，包括：用於承載待加工工件的一基座，其特徵在於，還包括申請專利範圍第7項至第11項任一項所述之偏壓調製系統，該偏壓調製系統與該基座電連接。 A plasma processing device, comprising: a base for carrying a workpiece to be processed, characterized in that it also includes the bias voltage modulation system according to any one of the 7th to 11th items of the scope of patent application, the bias voltage modulation The system is electrically connected to the base.
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