TWI714172B - Improved structure of wafer probe card - Google Patents

Improved structure of wafer probe card Download PDF

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TWI714172B
TWI714172B TW108125300A TW108125300A TWI714172B TW I714172 B TWI714172 B TW I714172B TW 108125300 A TW108125300 A TW 108125300A TW 108125300 A TW108125300 A TW 108125300A TW I714172 B TWI714172 B TW I714172B
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heat dissipation
heat
substrate
circuit board
printed circuit
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TW108125300A
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TW202104903A (en
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陳世宗
葉政宏
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中華精測科技股份有限公司
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Abstract

An improved structure of a wafer probe card including a substrate, a printed circuit board and a plurality of first heat dissipation channels is provided. A probe head is disposed under the substrate. The printed circuit board is disposed on the substrate and electrically connected to the substrate. Each of the first heat dissipation channels has a heat absorbing end, a heat dissipating end, and a conducting portion. The heat dissipation end is disposed between the substrate and the probe head, and the heat dissipation end is disposed and exposed on an upper surface of the printed circuit board, and the conductive portion passes through the substrate and the printed circuit board to conduct heat absorbed by the heat absorbing end to the heat dissipating end, thereby effectively reducing the operating temperature of the probe head and prolonging the service life.

Description

晶圓探針卡改良結構Improved structure of wafer probe card

本發明係關於一種改良結構；特別關於一種晶圓探針卡之改良結構。The present invention relates to an improved structure; in particular, it relates to an improved structure of a wafer probe card.

現有技術所使用之晶圓探針卡在晶圓測試的過程中會對晶圓進行一加熱程序，藉此模擬探針卡上實際工作溫度下的使用情況，同時檢測其良率。The wafer probe card used in the prior art performs a heating process on the wafer during the wafer test, thereby simulating the usage of the probe card at the actual operating temperature and simultaneously detecting its yield.

然而，由於在晶圓測試的過程中會需要將晶圓探針卡上的探針與待測晶圓進行接觸，使得對待測晶圓所施加的溫度一方面會藉由探針傳導至晶圓探針卡所具有的基板與印刷電路板，在另一方面，對待測晶圓所施加的溫度也可能藉由對流及輻射等方式傳遞至基板與印刷電路板的表面。However, since the probes on the wafer probe card need to be in contact with the wafer to be tested during the wafer test, the temperature applied to the wafer to be tested will be transferred to the wafer through the probes. The substrate and the printed circuit board of the probe card, on the other hand, the temperature applied to the wafer to be tested may also be transferred to the surface of the substrate and the printed circuit board by means such as convection and radiation.

上述因傳導、對流及輻射等方式傳遞至晶圓探針卡內的溫度，在缺乏良好散熱機制的情況下，一旦累積的溫度達到臨界點，便會造成晶圓探針卡上的探針產生燒針現象，甚至使晶圓探針卡的基板與印刷電路板內的線路燒毀，嚴重影響晶圓測試的時效。The above-mentioned temperature transferred to the wafer probe card due to conduction, convection and radiation, etc., in the absence of a good heat dissipation mechanism, once the accumulated temperature reaches the critical point, it will cause the probes on the wafer probe card to generate The needle burning phenomenon even burns down the substrate of the wafer probe card and the circuit in the printed circuit board, which seriously affects the timeliness of the wafer test.

有鑑於此，如何提供一種晶圓探針卡改良結構，以有效地降低晶圓探針卡內所累積的溫度，導出晶圓探針卡所吸收的熱，乃為此一業界亟待解決的問題。In view of this, how to provide an improved structure for the wafer probe card to effectively reduce the temperature accumulated in the wafer probe card and to extract the heat absorbed by the wafer probe card is an urgent problem in the industry. .

本發明之一目的在於提供一種晶圓探針卡改良結構，其可將測試期間累積於晶圓探針卡內側之高溫傳導至外部，藉此延長晶圓探針卡的使用壽命，同時避免探針的燒針現象，延緩探針因過熱而彈性疲乏，從而影響測試時的接觸穩定性與良率。An object of the present invention is to provide an improved structure for a wafer probe card, which can conduct the high temperature accumulated inside the wafer probe card during testing to the outside, thereby prolonging the service life of the wafer probe card while avoiding probing The needle burning phenomenon delays the elastic fatigue of the probe due to overheating, thereby affecting the contact stability and yield during testing.

為達上述目的，本發明所揭示之一種晶圓探針卡改良結構包含一基板、一印刷電路板及複數第一散熱通道。基板下方設置有一探針頭，探針頭下方具有複數探針，複數探針經由探針頭與基板電性連接，且複數探針用以接觸並檢測設置於複數探針下方之一待測物上的複數焊墊或錫球。印刷電路板，設置於基板上方並與基板電性連接。複數第一散熱通道各具有一吸熱端、相對於吸熱端之一散熱端，以及設置於吸熱端與散熱端之間之一傳導部。其中，各第一散熱通道所具有之吸熱端夾設於基板與探針頭之間，各第一散熱通道所具有之散熱端設置並露出於印刷電路板之一上表面，且各第一散熱通道所具有之傳導部穿設基板與印刷電路板，以將吸熱端所吸收之一熱傳導至散熱端。To achieve the above objective, an improved structure of a wafer probe card disclosed in the present invention includes a substrate, a printed circuit board and a plurality of first heat dissipation channels. A probe head is provided under the substrate, and there are plural probes under the probe head. The plural probes are electrically connected to the substrate through the probe head, and the plural probes are used to contact and detect a test object arranged under the plural probes Multiple pads or solder balls on the The printed circuit board is arranged above the substrate and is electrically connected to the substrate. The plurality of first heat dissipation channels each have a heat absorption end, a heat dissipation end opposite to the heat absorption end, and a conduction part arranged between the heat absorption end and the heat dissipation end. Wherein, the heat absorption end of each first heat dissipation channel is sandwiched between the substrate and the probe head, the heat dissipation end of each first heat dissipation channel is arranged and exposed on an upper surface of the printed circuit board, and each first heat dissipation channel The conduction part of the channel penetrates the substrate and the printed circuit board to conduct one of the heat absorbed by the heat sink to the heat sink.

本發明之晶圓探針卡改良結構更包含複數第二散熱通道與一輔助散熱環，複數第二散熱通道設置於印刷電路板之上表面，輔助散熱環設置於印刷電路板之一外周圍，各第二散熱通道分別連接各第一散熱通道之散熱端與輔助散熱環，以將該吸熱端所吸收之熱自散熱端傳導至各第二散熱通道與輔助散熱環。The improved structure of the wafer probe card of the present invention further includes a plurality of second heat dissipation channels and an auxiliary heat dissipation ring. The plurality of second heat dissipation channels are arranged on the upper surface of the printed circuit board, and the auxiliary heat dissipation ring is arranged on the outer periphery of the printed circuit board. Each second heat dissipation channel is respectively connected to the heat dissipation end of each first heat dissipation channel and the auxiliary heat dissipation ring, so as to conduct the heat absorbed by the heat absorption end from the heat dissipation end to each second heat dissipation channel and the auxiliary heat dissipation ring.

本發明之晶圓探針卡改良結構更包含一機構件，機構件設置於印刷電路板上方，且機構件於內側具有複數突起以承靠並接觸各第一散熱通道所具有之散熱端。The improved structure of the wafer probe card of the present invention further includes a mechanism component, which is arranged above the printed circuit board, and the mechanism component has a plurality of protrusions on the inner side to support and contact the heat dissipation end of each first heat dissipation channel.

本發明之晶圓探針卡改良結構所具有之機構件於外側更具有一外周圍突起，用以承靠並接觸輔助散熱環。The mechanism component of the improved structure of the wafer probe card of the present invention has an outer peripheral protrusion on the outer side for supporting and contacting the auxiliary heat dissipation ring.

本發明之晶圓探針卡改良結構所具有之複數第一散熱通道之材質為銅。The material of the plurality of first heat dissipation channels in the improved structure of the wafer probe card of the present invention is copper.

本發明之晶圓探針卡改良結構所具有之複數第二散熱通道與輔助散熱環之材質為銅。The material of the plurality of second heat dissipation channels and auxiliary heat dissipation rings of the improved structure of the wafer probe card of the present invention is copper.

本發明之晶圓探針卡改良結構所具有待測物為一待測晶圓。The object to be tested in the improved structure of the wafer probe card of the present invention is a wafer to be tested.

為讓上述目的、技術特徵及優點能更明顯易懂，下文係以較佳之實施例配合所附圖式進行詳細說明。In order to make the above objectives, technical features and advantages more obvious and understandable, the following is a detailed description with preferred embodiments in conjunction with the accompanying drawings.

如圖1、2所示，本發明所揭示之一種晶圓探針卡改良結構100之第一實施例包含一基板110、一印刷電路板120及複數第一散熱通道130。As shown in FIGS. 1 and 2, the first embodiment of an improved structure 100 for a wafer probe card disclosed in the present invention includes a substrate 110, a printed circuit board 120 and a plurality of first heat dissipation channels 130.

其中，基板110下方設置有一探針頭112，探針頭112下方具有複數探針114，複數探針114經由探針頭112與基板110電性連接，且複數探針114用以接觸並檢測設置於複數探針114下方之一待測物200上的複數焊墊或錫球210。印刷電路板120設置於基板110上方並與基板110電性連接。A probe head 112 is provided under the substrate 110, and a plurality of probes 114 are provided under the probe head 112. The plurality of probes 114 are electrically connected to the substrate 110 through the probe head 112, and the plurality of probes 114 are used to contact and detect the arrangement. A plurality of solder pads or solder balls 210 on a DUT 200 under the plurality of probes 114. The printed circuit board 120 is disposed above the substrate 110 and is electrically connected to the substrate 110.

於圖1、2之第一實施例中，複數第一散熱通道130各具有一吸熱端132、相對於吸熱端132設置之一散熱端134，以及設置於吸熱端132與散熱端134之間之一傳導部136。其中，各第一散熱通道130所具有之吸熱端132乃是夾設於基板110與探針頭112之間，各第一散熱通道130所具有之散熱端134則是設置並露出於印刷電路板120之一上表面122，且各第一散熱通道130所具有之傳導部136穿設基板110與印刷電路板120，以將吸熱端132所吸收之一熱傳導至散熱端134。In the first embodiment of FIGS. 1 and 2, each of the first heat dissipation channels 130 has a heat absorption end 132, a heat dissipation end 134 disposed opposite to the heat absorption end 132, and a heat dissipation end 134 disposed between the heat absorption end 132 and the heat dissipation end 134. A conductive part 136. Wherein, the heat absorption end 132 of each first heat dissipation channel 130 is sandwiched between the substrate 110 and the probe head 112, and the heat dissipation end 134 of each first heat dissipation channel 130 is provided and exposed on the printed circuit board. A top surface 122 of 120, and a conductive portion 136 of each first heat dissipation channel 130 penetrates the substrate 110 and the printed circuit board 120 to conduct one of the heat absorbed by the heat sink 132 to the heat sink 134.

詳細而言，當進行晶圓測試時，對待測晶圓（即：待測物200）所施加的溫度在經由傳導、對流及輻射等方式傳遞至晶圓探針卡改良結構100內形成熱後，該些熱便會被夾設於基板110與探針頭112之間的吸熱端132所吸收，從而藉由傳導部136被傳遞至設置並露出於印刷電路板120之上表面122的散熱端134，達到將熱自晶圓探針卡改良結構100內側移除之功效。In detail, when performing a wafer test, the temperature applied to the wafer to be tested (ie, the object under test 200) is transferred to the improved structure of the wafer probe card 100 through conduction, convection, and radiation to form heat. , The heat will be absorbed by the heat-absorbing end 132 sandwiched between the substrate 110 and the probe head 112, and then transferred to the heat-dissipating end provided and exposed on the upper surface 122 of the printed circuit board 120 through the conductive portion 136 134. The effect of removing heat from the inside of the improved structure 100 of the wafer probe card is achieved.

另一方面，如圖3、4之第二實施例所示，本發明之晶圓探針卡改良結構100可進一步包含複數第二散熱通道140與一輔助散熱環150。如圖所示，複數第二散熱通道140設置於印刷電路板120之上表面122，輔助散熱環150設置於印刷電路板120之一外周圍124，使各第二散熱通道140可分別用以連接各第一散熱通道130之散熱端134與設置於印刷電路板120之外周圍124的輔助散熱環150，以將自晶圓探針卡改良結構100內側移除之熱進一步地自散熱端134傳導至各第二散熱通道140與輔助散熱環150。On the other hand, as shown in the second embodiment of FIGS. 3 and 4, the improved structure 100 of the wafer probe card of the present invention may further include a plurality of second heat dissipation channels 140 and an auxiliary heat dissipation ring 150. As shown in the figure, a plurality of second heat dissipation channels 140 are provided on the upper surface 122 of the printed circuit board 120, and an auxiliary heat dissipation ring 150 is provided on an outer periphery 124 of the printed circuit board 120, so that each of the second heat dissipation channels 140 can be respectively used for connection The heat dissipation end 134 of each first heat dissipation channel 130 and the auxiliary heat dissipation ring 150 arranged on the periphery 124 of the printed circuit board 120 to further conduct the heat removed from the inside of the improved wafer probe card structure 100 from the heat dissipation end 134 To each second heat dissipation channel 140 and auxiliary heat dissipation ring 150.

如此一來，藉由第二散熱通道140與輔助散熱環150的設置，將能夠進一步增加晶圓探針卡改良結構100的散熱面積，從而有效地完成熱的移除作業。In this way, the arrangement of the second heat dissipation channel 140 and the auxiliary heat dissipation ring 150 can further increase the heat dissipation area of the improved wafer probe card structure 100, thereby effectively completing the heat removal operation.

於圖5所示之第三實施例中，晶圓探針卡改良結構100更包含一機構件160。機構件160的設置乃是為了更進一步利用傳導的方式來降低各散熱端134與輔助散熱環150上的高溫。In the third embodiment shown in FIG. 5, the improved wafer probe card structure 100 further includes a mechanical component 160. The arrangement of the mechanical component 160 is to further reduce the high temperature on the heat dissipation ends 134 and the auxiliary heat dissipation ring 150 by means of conduction.

請同時參閱圖5、6。晶圓探針卡改良結構100所具有的機構件160乃是設置於印刷電路板120上方，且於圖6所示之機構件160的第一態樣中，機構件160於內側具有複數突起162，複數突起162的設置乃是為了承靠並接觸各第一散熱通道130所具有之散熱端134，使傳遞至散熱端134的熱得以進一步藉由傳導的方式通過複數突起162傳遞至機構件160，從而降低基板110、複數探針114及印刷電路板120的工作溫度。Please refer to Figures 5 and 6 at the same time. The mechanism component 160 of the improved wafer probe card structure 100 is disposed above the printed circuit board 120, and in the first aspect of the mechanism component 160 shown in FIG. 6, the mechanism component 160 has a plurality of protrusions 162 on the inner side The arrangement of the plurality of protrusions 162 is to support and contact the heat dissipation end 134 of each first heat dissipation channel 130, so that the heat transferred to the heat dissipation end 134 can be further transferred to the mechanical component 160 through the plurality of protrusions 162 by conduction. , Thereby reducing the operating temperature of the substrate 110, the plurality of probes 114 and the printed circuit board 120.

另一方面，於圖7所示之機構件160的第二態樣中，機構件160於外側更具有一外周圍突起164。如此一來，當機構件160設置於印刷電路板120上方時，外周圍突起164將用以承靠並接觸輔助散熱環150，加速降低基板110、複數探針114及印刷電路板120的工作溫度。On the other hand, in the second aspect of the mechanism component 160 shown in FIG. 7, the mechanism component 160 further has an outer peripheral protrusion 164 on the outside. In this way, when the mechanical component 160 is disposed above the printed circuit board 120, the outer peripheral protrusion 164 will be used to bear and contact the auxiliary heat dissipation ring 150, and accelerate the reduction of the working temperature of the substrate 110, the plurality of probes 114 and the printed circuit board 120 .

於本發明之一實施例中，晶圓探針卡改良結構100所具有之複數第一散熱通道130、複數第二散熱通道140以及輔助散熱環150之材質較佳為銅，以有效進行熱的傳導作業。In one embodiment of the present invention, the material of the first heat dissipation channels 130, the second heat dissipation channels 140, and the auxiliary heat dissipation ring 150 of the improved wafer probe card structure 100 is preferably copper, so as to effectively conduct heat Conduction operations.

綜上所述，本發明乃是藉由第一散熱通道130、第二散熱通道140及輔助散熱環150等結構的設置，有效地將累積於基板110、複數探針114及印刷電路板120內的熱導出，從而降低基板110、複數探針114及印刷電路板120的工作溫度。而機構件160的設置，則有助於進一步加大第一散熱通道130、第二散熱通道140及輔助散熱環150等結構的整體散熱面積，加速散熱效果。如此一來，藉由使用本發明之晶圓探針卡改良結構100，將得以延長晶圓探針卡的使用壽命，避免探針的燒針現象，同時延緩探針因過熱而可能出現的彈性疲乏，從而增加測試時的接觸穩定性與良率。In summary, the present invention effectively accumulates in the substrate 110, the plurality of probes 114, and the printed circuit board 120 through the arrangement of the first heat dissipation channel 130, the second heat dissipation channel 140, and the auxiliary heat dissipation ring 150. The heat is removed, thereby reducing the operating temperature of the substrate 110, the plurality of probes 114, and the printed circuit board 120. The arrangement of the mechanical component 160 helps to further increase the overall heat dissipation area of the first heat dissipation channel 130, the second heat dissipation channel 140 and the auxiliary heat dissipation ring 150, and accelerate the heat dissipation effect. In this way, by using the improved structure 100 of the wafer probe card of the present invention, the service life of the wafer probe card can be prolonged, the needle burning phenomenon of the probe can be avoided, and the possible elasticity of the probe due to overheating can be delayed. Fatigue, thereby increasing the contact stability and yield during testing.

上述之實施例僅用來例舉本發明之實施態樣，以及闡釋本發明之技術特徵，並非用來限制本發明之保護範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍，本發明之權利保護範圍應以申請專利範圍為準。The above-mentioned embodiments are only used to illustrate the implementation of the present invention and explain the technical features of the present invention, and are not used to limit the protection scope of the present invention. Any change or equal arrangement that can be easily accomplished by a person familiar with this technology belongs to the scope of the present invention, and the scope of protection of the present invention shall be subject to the scope of the patent application.

100:晶圓探針卡改良結構 110:基板 112:探針頭 114:探針 120:印刷電路板 122:上表面 124:外周圍 130:第一散熱通道 132:吸熱端 134:散熱端 136:傳導部 140:第二散熱通道 150:輔助散熱環 160:機構件 162:突起 164:外周圍突起 200:待測物 210:焊墊或錫球 100: Improved structure of wafer probe card 110: substrate 112: Probe head 114: Probe 120: printed circuit board 122: upper surface 124: Outside 130: The first heat dissipation channel 132: Endothermic 134: heat sink 136: Conduction Department 140: second heat dissipation channel 150: auxiliary cooling ring 160: mechanical parts 162: Prominence 164: Outer peripheral protrusion 200: DUT 210: Pad or solder ball

圖1為本發明晶圓探針卡改良結構之第一實施例示意圖； 圖2為本發明晶圓探針卡改良結構之第一實施例的另一視角示意圖； 圖3為本發明晶圓探針卡改良結構之第二實施例示意圖； 圖4為本發明晶圓探針卡改良結構之第二實施例的另一視角示意圖； 圖5為本發明晶圓探針卡改良結構之第三實施例示意圖； 圖6為本發明晶圓探針卡改良結構所具有之機構件的第一態樣示意圖；以及 圖7為本發明晶圓探針卡改良結構所具有之機構件的第二態樣示意圖。 1 is a schematic diagram of the first embodiment of the improved structure of the wafer probe card of the present invention; 2 is a schematic view of another view of the first embodiment of the improved structure of the wafer probe card of the present invention; 3 is a schematic diagram of a second embodiment of the improved structure of the wafer probe card of the present invention; 4 is a schematic view from another perspective of the second embodiment of the improved structure of the wafer probe card of the present invention; 5 is a schematic diagram of a third embodiment of the improved structure of the wafer probe card of the present invention; 6 is a schematic diagram of the first aspect of the mechanical components of the improved structure of the wafer probe card of the present invention; and FIG. 7 is a schematic diagram of a second aspect of the mechanical components of the improved structure of the wafer probe card of the present invention.

100:晶圓探針卡改良結構 100: Improved structure of wafer probe card

110:基板 110: substrate

112:探針頭 112: Probe head

114:探針 114: Probe

120:印刷電路板 120: printed circuit board

130:第一散熱通道 130: The first heat dissipation channel

132:吸熱端 132: Endothermic

134:散熱端 134: heat sink

136:傳導部 136: Conduction Department

200:待測物 200: DUT

210:焊墊或錫球 210: Pad or solder ball

Claims (5)

一種晶圓探針卡改良結構，包含：一基板，其下方設置有一探針頭，該探針頭下方具有複數探針，該等探針經由該探針頭與該基板電性連接，且該等探針用以接觸並檢測設置於該等探針下方之一待測物上的複數焊墊或錫球；一印刷電路板，設置於該基板上方並與該基板電性連接；以及複數第一散熱通道，該等第一散熱通道各具有一吸熱端、相對於該吸熱端之一散熱端，以及設置於該吸熱端與該散熱端之間之一傳導部；其中，各該第一散熱通道所具有之該吸熱端夾設於該基板與該探針頭之間，各該第一散熱通道所具有之該散熱端設置並露出於該印刷電路板之一上表面，且各該第一散熱通道所具有之該傳導部穿設該基板與該印刷電路板，以將該吸熱端所吸收之熱傳導至該散熱端；其中，更包含複數第二散熱通道與一輔助散熱環，該等第二散熱通道設置於該印刷電路板之該上表面，該輔助散熱環設置於該印刷電路板之一外周圍，各該第二散熱通道分別連接各該第一散熱通道之該散熱端與該輔助散熱環，以將該吸熱端所吸收之熱自該散熱端傳導至各該第二散熱通道與該輔助散熱環。 An improved structure for a wafer probe card, comprising: a substrate with a probe head arranged under the probe head, a plurality of probes are arranged under the probe head, the probes are electrically connected to the substrate through the probe head, and the The other probes are used for contacting and detecting a plurality of solder pads or solder balls arranged on one of the test objects under the probes; a printed circuit board arranged above the substrate and electrically connected to the substrate; and A heat dissipation channel, each of the first heat dissipation channels has a heat absorption end, a heat dissipation end opposite to the heat absorption end, and a conduction portion arranged between the heat absorption end and the heat dissipation end; wherein each of the first heat dissipation ends The heat absorption end of the channel is sandwiched between the substrate and the probe head, the heat dissipation end of each of the first heat dissipation channels is provided and exposed on an upper surface of the printed circuit board, and each of the first The conduction part of the heat dissipation channel penetrates the substrate and the printed circuit board to conduct the heat absorbed by the heat absorption end to the heat dissipation end; wherein, it further includes a plurality of second heat dissipation channels and an auxiliary heat dissipation ring. Two heat dissipation channels are arranged on the upper surface of the printed circuit board, the auxiliary heat dissipation ring is arranged around an outer periphery of the printed circuit board, and each of the second heat dissipation channels is respectively connected to the heat dissipation end of each first heat dissipation channel and the auxiliary The heat dissipation ring conducts the heat absorbed by the heat absorption end from the heat dissipation end to each of the second heat dissipation channels and the auxiliary heat dissipation ring. 如請求項1所述之晶圓探針卡改良結構，更包含一機構件，該機構件設置於該印刷電路板上方，且該機構件於內側具有複數突起以承靠並接觸各該第一散熱通道所具有之該散熱端。 The improved structure of the wafer probe card according to claim 1, further comprising a mechanical component, the mechanical component is arranged above the printed circuit board, and the mechanical component has a plurality of protrusions on the inner side to support and contact each of the first The heat dissipation end of the heat dissipation channel. 如請求項2所述之晶圓探針卡改良結構，其中該機構件於外側更具 有一外周圍突起，用以承靠並接觸該輔助散熱環。 The improved structure of the wafer probe card according to claim 2, wherein the mechanical component is more external There is an outer peripheral protrusion for supporting and contacting the auxiliary cooling ring. 如請求項2所述之晶圓探針卡改良結構，其中該等第一散熱通道之材質為銅。 The improved structure of the wafer probe card according to claim 2, wherein the material of the first heat dissipation channels is copper. 如請求項2所述之晶圓探針卡改良結構，其中該等第二散熱通道與該輔助散熱環之材質為銅。 The improved structure of the wafer probe card according to claim 2, wherein the material of the second heat dissipation channels and the auxiliary heat dissipation ring is copper.
TW108125300A 2019-07-17 2019-07-17 Improved structure of wafer probe card TWI714172B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1623099A (en) * 2001-12-27 2005-06-01 佛姆费克托公司 Cooling assembly with direct cooling of active electronic components
TW201415037A (en) * 2012-10-03 2014-04-16 Corad Technology Inc Fine pitch probe card interface and probe card
WO2017006928A1 (en) * 2015-07-08 2017-01-12 パラマウントベッド株式会社 Electrically operated bed
TW201734464A (en) * 2012-08-01 2017-10-01 Japan Electronic Mat Corporation Guide plate for a probe card and probe card provided with same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1623099A (en) * 2001-12-27 2005-06-01 佛姆费克托公司 Cooling assembly with direct cooling of active electronic components
TW201734464A (en) * 2012-08-01 2017-10-01 Japan Electronic Mat Corporation Guide plate for a probe card and probe card provided with same
TW201415037A (en) * 2012-10-03 2014-04-16 Corad Technology Inc Fine pitch probe card interface and probe card
WO2017006928A1 (en) * 2015-07-08 2017-01-12 パラマウントベッド株式会社 Electrically operated bed

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