TWI713418B - Three-dimensional wiring board, method for manufacturing three-dimensional wiring board, and base material for three-dimensional wiring board - Google Patents

Three-dimensional wiring board, method for manufacturing three-dimensional wiring board, and base material for three-dimensional wiring board Download PDF

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TWI713418B
TWI713418B TW106108954A TW106108954A TWI713418B TW I713418 B TWI713418 B TW I713418B TW 106108954 A TW106108954 A TW 106108954A TW 106108954 A TW106108954 A TW 106108954A TW I713418 B TWI713418 B TW I713418B
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metal film
film
wiring board
metal
resin film
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TW201803415A (en
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道脇茂
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日商名幸電子股份有限公司
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0284—Details of three-dimensional rigid printed circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0014—Shaping of the substrate, e.g. by moulding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Abstract

一種立體配線基板、立體配線基板的製造方法以及立體配線基板用基材，該立體配線基板係具有：立體的樹脂膜(1)，係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；第一金屬膜(5)，係形成於前述樹脂膜的表面上，且具備所期望的圖案；以及第二金屬膜(21)，係形成於前述第一金屬膜上；前述樹脂膜係在前述第一金屬膜的形成面具備複數個凹凸；前述第一金屬膜係以成為將金屬沉積成粒子狀而成的多孔狀之結構的方式來調整膜厚。 A three-dimensional wiring board, a method for manufacturing a three-dimensional wiring board, and a base material for a three-dimensional wiring board, the three-dimensional wiring board having: a three-dimensional resin film (1) having a storage elastic modulus of 2 in a saturated zone above the glass transition temperature ×10 7 Pa or less dynamic viscoelastic properties, and with a breaking elongation of 50% or more; the first metal film (5) is formed on the surface of the aforementioned resin film, and has a desired pattern; and the second metal The film (21) is formed on the first metal film; the resin film is provided with a plurality of concavities and convexities on the forming surface of the first metal film; the first metal film is formed by depositing metal into particles The thickness of the film can be adjusted by the porous structure.

Description

立體配線基板、立體配線基板的製造方法以及立體配線基板用基材 Three-dimensional wiring board, method for manufacturing three-dimensional wiring board, and base material for three-dimensional wiring board

本發明係關於一種立體成型的立體配線基板、該立體配線基板的製造方法以及用於該立體配線基板的立體配線基板用基材。 The present invention relates to a three-dimensionally molded three-dimensional wiring board, a method of manufacturing the three-dimensional wiring board, and a base material for a three-dimensional wiring board used for the three-dimensional wiring board.

作為以往所週知的立體配線基板係有MID(Molded Interconnect Device；模製互連裝置)基板，該MID基板係一種在具備三維結構的結構體之表面上直接且立體地形成有電子電路的零件。作為有關MID基板的技術，已知有雙射注(two-shot)法、MIPTEC(Microscopic Integrated Processing Technology；精細整合製造技術)、及LDS(Laser Direct Structuring；雷射直接成型)等的工法。無論是在哪一種工法中，都是在對模製樹脂(molded resin)形成有三維結構之後，對其表面形成配線電路。例如，在專利文獻1中已有揭示一種有關MID基板及其製造的技術。 As a well-known three-dimensional wiring board in the past, there is a MID (Molded Interconnect Device; Molded Interconnect Device) substrate, which is a part in which an electronic circuit is directly and three-dimensionally formed on the surface of a structure having a three-dimensional structure . As technologies related to MID substrates, there are known methods such as a two-shot method, MIPTEC (Microscopic Integrated Processing Technology), and LDS (Laser Direct Structuring). In any method, after forming a three-dimensional structure on the molded resin, a wiring circuit is formed on the surface. For example, Patent Document 1 discloses a technology related to MID substrates and their manufacturing.

在雙射注法中，係對一次成型後的模製樹脂上之不進行配線形成的部分，進行藉由新的樹脂所為之二次成型，且將該二次成型的樹脂當作阻劑(resist)並進行催化劑塗布 及鍍覆，藉此在模製樹脂上形成配線電路。然而，因是藉由二次成型後的樹脂來限制配線圖案形狀，故而從二次成型用的模具加工精度之界限來看，顯示導體寬度與導體間隙的L/S(line width and spacing；線寬/線距)之最小值會成為150μm/150μm左右，且很難形成更微細的配線圖案。 In the two-shot injection method, the part of the molded resin after the primary molding that is not formed by wiring is subjected to secondary molding with a new resin, and the secondary molded resin is used as a resist ( resist) and catalyst coating And plating, thereby forming a wiring circuit on the molded resin. However, because the shape of the wiring pattern is restricted by the resin after the secondary molding, from the perspective of the processing accuracy of the mold for secondary molding, the L/S (line width and spacing; line) of the conductor width and the conductor gap is displayed. The minimum value of width/line pitch) will be about 150μm/150μm, and it is difficult to form finer wiring patterns.

在MIPTEC中，係在所成型後的模製樹脂之表面整體施予金屬化(metallizing)，且藉由雷射光來去除配線電路之外緣部分的金屬(金屬層)。之後，對成為配線電路的區域通電並進行電鍍，之後在成型體的全面施予沖洗蝕刻(flush etching)以去除配線電路以外的金屬，藉此在模製樹脂上形成配線電路。然而，在使用雷射光時，需要與所成型後的模製樹脂之三維形狀對應的特殊雷射照射裝置，且雷射加工的費事及藉由設備投資所產生的製造成本之增加將造成問題。又，為了藉由電鍍在配線電路沉積所需的金屬，有必要僅對成為配線電路的區域通電，所以有必要使成為該配線電路的區域與成型體的外周部電性連接，或是透過供電線來與外周部電性連接。亦即，會發生很難將成為該配線電路的區域從成型體的外周部電性分離(亦即，獨立的配線圖案之形成)的問題、或作為電路最終伴隨不必要的供電線之形成及去除而增加成本的問題。 In MIPTEC, metallizing is applied to the entire surface of the molded resin after molding, and the metal (metal layer) on the outer edge of the wiring circuit is removed by laser light. After that, the area to be the wiring circuit is energized and electroplated, and then flush etching is applied to the entire surface of the molded body to remove metal other than the wiring circuit, thereby forming the wiring circuit on the molded resin. However, when using laser light, a special laser irradiation device corresponding to the three-dimensional shape of the molded resin is required, and the labor of laser processing and the increase in manufacturing cost due to equipment investment will cause problems . In addition, in order to deposit the required metal on the wiring circuit by electroplating, it is necessary to energize only the area that becomes the wiring circuit. Therefore, it is necessary to electrically connect the area that becomes the wiring circuit to the outer periphery of the molded body, or through the supply The wires are electrically connected to the outer periphery. In other words, it is difficult to electrically separate the area that becomes the wiring circuit from the outer peripheral portion of the molded body (that is, the formation of an independent wiring pattern), or the formation of unnecessary power supply lines and the formation of unnecessary power lines as a circuit eventually occur. Remove the problem of increasing costs.

在LDS中，係使用包括催化性金屬離子(catalytic metal ion)粒子的特殊樹脂材料進行一次成型，且對成為配線電路的區域照射雷射光以使該催化性金屬離子粒子活化(金屬化)露出，進而對該催化性金屬的露出部分進行鍍覆(原 則上是無電電鍍(electroless plating))，藉此在模製樹脂上形成配線電路。然而，從使所成型後的模製樹脂內之催化性金屬離子粒子活化(金屬化)的精度的問題來看，很難使L/S的最小值成為100μm/150μm左右，且很難形成更微細的配線圖案。又，與MIPTEC同樣需要特殊的雷射照射裝置，且雷射加工的費事及藉由設備投資所產生的製造成本之增加將造成問題。 In LDS, a special resin material including catalytic metal ion particles is used for one-shot molding, and laser light is irradiated to the area that becomes the wiring circuit to activate (metallize) the catalytic metal ion particles. Then the exposed part of the catalytic metal is plated (the original The above is electroless plating, whereby wiring circuits are formed on the molded resin. However, from the perspective of the accuracy of activating (metallizing) the catalytic metal ion particles in the molded resin after molding, it is difficult to make the minimum value of L/S about 100μm/150μm, and it is difficult to form a more accurate one. Fine wiring patterns. In addition, a special laser irradiation device is required like MIPTEC, and the labor of laser processing and the increase in manufacturing cost due to equipment investment will cause problems.

然後，無論是在上述哪一個工法中，為了要在具備三維之形狀的模製樹脂上形成配線電路，最終所製造的MID基板基本上都會成為單面基板。為此，與雙面基板相較，配線電路的自由度變小，且亦發生基板本身的小型化變得困難的問題。作為解決該問題及上面所述之問題的方法，有以下的方法：在聚醯亞胺(polyimide)等的熱塑性樹脂上形成配線電路之後，利用加熱及加壓來對樹脂施予折彎加工，藉此製造立體配線基板。例如，在專利文獻2中已有揭示在聚醯亞胺膜上藉由熱壓接來貼合金屬箔之後使其立體成型的技術，而在專利文獻3中則有揭示在聚碸(polysulfone)樹脂上塗布導電性糊之後使其立體成型的技術。 Then, regardless of the above-mentioned method, in order to form a wiring circuit on a molded resin having a three-dimensional shape, the final MID substrate produced will basically be a single-sided substrate. For this reason, compared with a double-sided board, the degree of freedom of the wiring circuit becomes smaller, and there is also a problem that it becomes difficult to reduce the size of the board itself. As a method for solving this problem and the above-mentioned problems, there is the following method: after forming a wiring circuit on a thermoplastic resin such as polyimide, bending the resin by heating and pressing, Thus, a three-dimensional wiring board is manufactured. For example, Patent Document 2 discloses a technique of laminating a metal foil on a polyimide film by thermocompression bonding and then making it three-dimensionally molded, while Patent Document 3 discloses a technique of polysulfone (polysulfone) The technology of three-dimensional molding after coating conductive paste on resin.

又，在施予折彎加工的情況下，作為彼此完全不同之材質的熱塑性樹脂和成為配線的金屬會發生剝離的問題。為了要解決如此的問題亦有檢討以下的技術：藉由使用濺鍍(sputtering)、蒸鍍、其他濕式鍍覆法，或是使用分子接合技術的特殊工法，來使熱塑性樹脂和金屬牢固地密接。 In addition, when the bending process is applied, the thermoplastic resin, which is a material that is completely different from each other, and the metal forming the wiring, may peel off. In order to solve such problems, the following techniques have also been reviewed: by using sputtering, vapor deposition, other wet plating methods, or special methods using molecular bonding technology, the thermoplastic resin and metal can be firmly bonded. Close.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

專利文獻1：日本特開2012-94605號公報。 Patent Document 1: JP 2012-94605 A.

專利文獻2：日本特開平06-188537號公報。 Patent Document 2: Japanese Patent Application Publication No. 06-188537.

專利文獻3：日本特開2000-174399號公報。 Patent Document 3: Japanese Patent Laid-Open No. 2000-174399.

然而，當欲藉由加熱及加壓將平面的熱塑性樹脂予以折彎且成型為立體時，就會以屈曲部為中心而產生延伸。此時，雖然熱塑性樹脂多為斷裂伸度(breaking elongation)較大且比較自由性地延伸，但是已形成圖案的金屬當延伸到某一界限範圍做更進一步延伸時就會產生寬度較寬的裂痕(crack)且會斷裂。例如，當藉由如專利文獻2及專利文獻3的方法，在將成為配線電路的金屬形成於樹脂上之後進行立體成型時，配線電路就容易在立體配線基板的屈曲部分斷線，而難以製造可靠度優異的立體配線基板。尤其是，在將複雜之立體形狀且延伸之量較多的立體基板進行成型的情況下，藉由配線電路之斷裂所產生的斷線就更加容易發生。 However, when it is desired to bend and shape a flat thermoplastic resin into a three-dimensional shape by heating and pressing, it will stretch around the flexion part. At this time, although thermoplastic resins usually have a relatively large breaking elongation and extend relatively freely, the patterned metal will generate cracks with a wider width when it extends to a certain limit and extends further. (crack) and will break. For example, when a metal that becomes a wiring circuit is formed on a resin and then three-dimensionally molded by methods such as Patent Document 2 and Patent Document 3, the wiring circuit is likely to be broken at the bent portion of the three-dimensional wiring board, making it difficult to manufacture A three-dimensional wiring board with excellent reliability. In particular, when a three-dimensional substrate with a complicated three-dimensional shape and a large amount of extension is molded, the disconnection caused by the breakage of the wiring circuit is more likely to occur.

又，為了使熱塑性樹脂和金屬牢固地密接，而在使用濺鍍、蒸鍍、其他的濕式鍍覆法，或是使用分子接合技術的特殊工法的情況下，係有必要對熱塑性樹脂的表面，施予蝕刻(etching)，或是進行藉由電暈(corona)處理、低壓 UV(Ultra Violet；紫外線)照射、電漿(plasma)處理等所為的表面狀態之改質。如此的前處理係需要所期望的藥劑或裝置，且會造成關係到立體配線基板本身之成本增加的問題。 In addition, in order to make the thermoplastic resin and the metal adhere firmly, when sputtering, vapor deposition, other wet plating methods, or special methods using molecular bonding technology are used, it is necessary to apply the surface of the thermoplastic resin , Etching (etching), or corona (corona) treatment, low pressure Surface modification caused by UV (Ultra Violet) irradiation and plasma treatment. Such pre-processing requires the desired medicine or device, and causes a problem related to the increase in the cost of the three-dimensional wiring board itself.

本發明係有鑑於如此的課題所開發完成，目的在於提供一種立體配線基板及其製造方法、以及立體配線基板及使用於該立體配線基板的立體配線基板用基材，能謀求樹脂膜與作為配線電路之材料的金屬之剝離的防止、配線電路的微細加工、以及配線電路之斷線的防止，並具備優異的可靠度，並且可以用低成本來製造。 The present invention has been developed in view of such problems, and its purpose is to provide a three-dimensional wiring board and a method of manufacturing the same, as well as a three-dimensional wiring board and a base material for a three-dimensional wiring board used in the three-dimensional wiring board. The prevention of metal peeling of the material of the circuit, the micro processing of the wiring circuit, and the prevention of the disconnection of the wiring circuit, and have excellent reliability, and can be manufactured at low cost.

為了達成上述目的，本發明的立體配線基板係具有：立體的樹脂膜，係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；第一金屬膜，係形成於前述樹脂膜的表面上，且具備所期望的圖案；以及第二金屬膜，係形成於前述第一金屬膜上；前述樹脂膜係在前述第一金屬膜的形成面具備複數個凹凸；前述第一金屬膜係以成為將金屬沉積成粒子狀而成的多孔(porous)狀之結構的方式來調整膜厚。 In order to achieve the above-mentioned object, the three-dimensional wiring board of the present invention has: a three-dimensional resin film with dynamic viscoelastic properties with a storage elastic modulus of 2×10 7 Pa or less in the saturated zone above the glass transition temperature and 50% The above breaking elongation; the first metal film is formed on the surface of the aforementioned resin film and has a desired pattern; and the second metal film is formed on the aforementioned first metal film; the aforementioned resin film is formed on the aforementioned The formation surface of the first metal film is provided with a plurality of concavities and convexities; and the thickness of the first metal film is adjusted so as to have a porous structure formed by depositing metal into particles.

又，為了達成上述目的，本發明之立體配線基板的製造方法係具有：準備步驟，用以準備平坦的樹脂膜，前述樹脂膜係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率 為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；凹凸形成步驟，係對前述樹脂膜施予加熱及加壓，用以在前述樹脂膜的表面形成複數個凹凸；第一金屬膜形成步驟，用以在前述樹脂膜的表面上形成第一金屬膜；圖案形成步驟，係藉由光微影術對前述第一金屬膜施予圖案化，且形成所期望的圖案；立體成型步驟，其對形成有前述第一金屬膜之狀態的前述樹脂膜施予加熱及加壓以進行立體成型；以及第二金屬膜形成步驟，用以在前述圖案形成後的前述第一金屬膜上形成第二金屬膜；在前述第一金屬膜形成步驟中，係將金屬沉積成粒子狀且調整膜厚，藉此將前述第一金屬膜形成為多孔狀。 In addition, in order to achieve the above-mentioned object, the method for manufacturing a three-dimensional wiring board of the present invention has: a preparation step for preparing a flat resin film, the resin film having a storage elastic modulus in a saturated zone above the glass transition temperature of 2× Dynamic viscoelastic properties of 10 7 Pa or less, and a breaking elongation of 50% or more; the unevenness forming step is to apply heat and pressure to the resin film to form a plurality of unevenness on the surface of the resin film; A metal film forming step for forming a first metal film on the surface of the resin film; a pattern forming step for patterning the first metal film by photolithography to form a desired pattern; A three-dimensional molding step of applying heat and pressure to the resin film in the state where the first metal film is formed to perform three-dimensional molding; and a second metal film forming step for the first metal after the pattern is formed A second metal film is formed on the film; in the first metal film forming step, the metal is deposited into particles and the film thickness is adjusted, thereby forming the first metal film into a porous shape.

更且，為了達成上述目的，本發明的立體配線基板用基材係具有：立體的樹脂膜，係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；以及第一金屬膜，係形成於前述樹脂膜的表面上，且具備所期望的圖案；前述樹脂膜係在前述第一金屬膜的形成面具備複數個凹凸；前述第一金屬膜係以成為將金屬沉積成粒子狀而成的多孔狀之結構的方式來調整膜厚。 Furthermore, in order to achieve the above-mentioned object, the base material for a three-dimensional wiring board of the present invention has: a three-dimensional resin film having a dynamic viscoelasticity with a storage elastic modulus of 2×10 7 Pa or less in the saturated zone above the glass transition temperature The first metal film is formed on the surface of the resin film and has a desired pattern; and the resin film is provided with pluralities on the surface where the first metal film is formed. Concave and convex; The first metal film is to become a porous structure formed by depositing metal into particles to adjust the film thickness.

藉由本發明，可以提供一種立體配線基板及其製造方法、以及立體配線基板及使用於該立體配線基板的立體配線基板用基材，能謀求樹脂膜與作為配線電路之材料的金屬之剝離的防止、配線電路的微細加工、以及配線電路之 斷線的防止，並具備優異的可靠度，並且可以用低成本來製造。 According to the present invention, it is possible to provide a three-dimensional wiring board and a method for manufacturing the three-dimensional wiring board, and a three-dimensional wiring board and a base material for a three-dimensional wiring board used in the three-dimensional wiring board, which can prevent peeling of the resin film and the metal as the material of the wiring circuit , Microfabrication of wiring circuit, and wiring circuit It can prevent disconnection and has excellent reliability and can be manufactured at low cost.

1:熱塑性樹脂膜 1: Thermoplastic resin film

1a:第一面 1a: First side

1b:第二面 1b: second side

1d:屈曲部 1d: flexion

2、3:金屬箔 2, 3: Metal foil

2a、3a:粗化面 2a, 3a: roughened surface

4:貫通孔 4: Through hole

5:第一金屬膜 5: The first metal film

5a:粒子 5a: particles

11:模具 11: Mould

12:上部模具 12: Upper mold

13:下部模具 13: Lower mold

14:上部加熱裝置 14: Upper heating device

15:下部加熱裝置 15: Lower heating device

16:立體配線基板用基材 16: Base material for three-dimensional wiring board

17:龜裂 17: Cracking

21:第二金屬膜 21: second metal film

30:立體配線基板 30: Three-dimensional wiring board

40:安裝基板 40: Install the base plate

41、42:電子零件 41, 42: electronic parts

圖1係本發明之實施例的立體配線基板之製造步驟中的剖視圖。 FIG. 1 is a cross-sectional view in a manufacturing step of a three-dimensional wiring board according to an embodiment of the present invention.

圖2係顯示使用於本實施例之立體配線基板的熱塑性樹脂膜及習知的熱塑性樹脂膜之動態黏彈性特性之貯藏彈性率的值之溫度依存性的曲線圖。 2 is a graph showing the temperature dependence of the value of the storage elastic modulus of the dynamic viscoelastic properties of the thermoplastic resin film used in the three-dimensional wiring board of the present embodiment and the conventional thermoplastic resin film.

圖3係本發明之實施例的立體配線基板之製造步驟中的概略圖。 FIG. 3 is a schematic diagram in the manufacturing steps of the three-dimensional wiring board of the embodiment of the present invention.

圖4係本發明之實施例的立體配線基板之製造步驟中的剖視圖。 4 is a cross-sectional view of the three-dimensional wiring board in the manufacturing step of the embodiment of the present invention.

圖5係本發明之實施例的立體配線基板之製造步驟中的剖視圖。 FIG. 5 is a cross-sectional view of the three-dimensional wiring board in the manufacturing step of the embodiment of the present invention.

圖6係本發明之實施例的立體配線基板之製造步驟中的剖視圖。 FIG. 6 is a cross-sectional view of the three-dimensional wiring board in the manufacturing step of the embodiment of the present invention.

圖7係本發明之實施例的立體配線基板之製造步驟中的剖視圖。 FIG. 7 is a cross-sectional view of the three-dimensional wiring board in the manufacturing step of the embodiment of the present invention.

圖8係本發明之實施例的立體配線基板之製造步驟中的剖視圖。 FIG. 8 is a cross-sectional view of the three-dimensional wiring board in the manufacturing step of the embodiment of the present invention.

圖9係有關本發明之實施例的立體配線基板之金屬膜形成中的概略圖。 FIG. 9 is a schematic view of the metal film formation of the three-dimensional wiring board according to the embodiment of the present invention.

圖10係有關本發明之實施例的立體配線基板之金屬膜形成中的概略圖。 FIG. 10 is a schematic diagram of the metal film formation of the three-dimensional wiring board according to the embodiment of the present invention.

圖11係本發明之實施例的立體配線基板之製造步驟 中的剖視圖。 Figure 11 is the manufacturing steps of the three-dimensional wiring board of the embodiment of the present invention Sectional view in.

圖12係顯示本發明之實施例的立體成型之製造步驟的剖視圖。 12 is a cross-sectional view showing the manufacturing steps of the three-dimensional molding of the embodiment of the present invention.

圖13係顯示本發明之實施例的立體成型之製造步驟的剖視圖。 13 is a cross-sectional view showing the manufacturing steps of the three-dimensional molding of the embodiment of the present invention.

圖14係顯示本發明之實施例的立體成型之製造步驟的剖視圖。 14 is a cross-sectional view showing the manufacturing steps of the three-dimensional molding of the embodiment of the present invention.

圖15係顯示本發明之實施例的立體成型之製造步驟的剖視圖。 15 is a cross-sectional view showing the manufacturing steps of the three-dimensional molding of the embodiment of the present invention.

圖16係本發明之實施例的立體配線基板之製造步驟中的剖視圖。 FIG. 16 is a cross-sectional view in the manufacturing steps of the three-dimensional wiring board according to the embodiment of the present invention.

圖17係本發明之實施例的立體配線基板之製造步驟中的剖視圖。 FIG. 17 is a cross-sectional view of the three-dimensional wiring board in the manufacturing step of the embodiment of the present invention.

圖18係本發明之實施例的立體配線基板的立體圖。 Fig. 18 is a perspective view of a three-dimensional wiring board according to an embodiment of the present invention.

圖19係顯示本發明之實施例的立體配線基板之使用例的概略圖。 FIG. 19 is a schematic diagram showing a usage example of the three-dimensional wiring board of the embodiment of the present invention.

以下，有關本發明的實施形態係參照圖式且基於實施例來加以詳細說明。再者，本發明並非被限定於以下說明的內容，而是在不變更其要旨的範圍內能夠任意地變更實施。又，實施例之說明中所用的圖式，無論是哪一個圖式都是示意性地顯示本發明的立體配線基板及其構成構件，並有為了深入理解而進行部分的強調、放大、縮小、或省略等，且未正確地顯示立體配線基板及其構成構件之縮尺或形狀等的情況。更且，在實施例中所用的各種數值，亦 有顯示一例的情況，且能依需要做各種變更。 Hereinafter, the embodiments of the present invention will be described in detail based on examples with reference to the drawings. In addition, this invention is not limited to the content demonstrated below, but can change and implement arbitrarily within the range which does not change the summary. In addition, the drawings used in the description of the embodiments, no matter which of the drawings, schematically show the three-dimensional wiring board of the present invention and its constituent members, and are partially emphasized, enlarged, reduced, Or it may be omitted, and the scale or shape of the three-dimensional wiring board and its components are not displayed correctly. Moreover, the various numerical values used in the examples are also One example is shown, and various changes can be made as needed.

[實施例] [Example]

以下，一邊參照圖1至圖18，一邊針對本發明之實施例的立體配線基板的製造方法以及所製造的立體配線基板加以詳細說明。在此，圖1、圖3至圖8、圖11、圖16及圖17係立體配線基板之製造步驟中的剖視圖。又，圖2係顯示使用於本實施例之立體配線基板的熱塑性樹脂膜及習知的熱塑性樹脂膜之動態黏彈性特性之貯藏彈性率的值之溫度依存性的曲線圖。更且，圖9及圖10係有關本發明之實施例的立體配線基板之金屬膜形成中的概略圖。然後，圖12至圖15係顯示本發明之實施例的立體成型之製造步驟的剖視圖。圖18係本發明之實施例的立體配線基板的立體圖。 Hereinafter, with reference to FIGS. 1 to 18, the method of manufacturing the three-dimensional wiring board and the manufactured three-dimensional wiring board of the embodiment of the present invention will be described in detail. Here, FIG. 1, FIG. 3 to FIG. 8, FIG. 11, FIG. 16, and FIG. 17 are cross-sectional views in the manufacturing steps of the three-dimensional wiring board. In addition, FIG. 2 is a graph showing the temperature dependence of the storage elastic modulus value of the dynamic viscoelastic properties of the thermoplastic resin film used in the three-dimensional wiring board of the present embodiment and the conventional thermoplastic resin film. Furthermore, FIG. 9 and FIG. 10 are schematic diagrams of forming a metal film of a three-dimensional wiring board according to an embodiment of the present invention. Then, FIGS. 12 to 15 are cross-sectional views showing the manufacturing steps of the three-dimensional molding of the embodiment of the present invention. Fig. 18 is a perspective view of a three-dimensional wiring board according to an embodiment of the present invention.

首先，如圖1所示，準備具備約150μm之厚度的熱塑性樹脂膜1(準備步驟)。作為熱塑性樹脂膜1例如可以使用聚醯亞胺或聚對苯二甲酸二乙酯(polyethylene terephthalate)等的公知樹脂膜。對於熱塑性樹脂膜1的厚度並沒有限定，可以按照與立體配線基板的用途及所要求的特性做適當變更。例如，在單體使用立體配線基板的情況下，亦可將熱塑性樹脂膜1的厚度調整在約100μm左右(75μm以上150μm以下)，而在將立體配線基板與其他的模製樹脂等之保持構件一起使用的情況下，亦可調整至50μm以下。 First, as shown in FIG. 1, a thermoplastic resin film 1 having a thickness of about 150 μm is prepared (preparation step). As the thermoplastic resin film 1, for example, a known resin film such as polyimide or polyethylene terephthalate (polyethylene terephthalate) can be used. The thickness of the thermoplastic resin film 1 is not limited, and can be appropriately changed in accordance with the use of the three-dimensional wiring board and the required characteristics. For example, when a three-dimensional wiring board is used alone, the thickness of the thermoplastic resin film 1 can also be adjusted to about 100 μm (75 μm or more and 150 μm or less), and the three-dimensional wiring board and other molded resins can be used for holding members. When used together, it can be adjusted to 50μm or less.

又，重要的是：熱塑性樹脂膜1係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性。此理由係因能容易對熱塑性樹脂膜1進行後面所述的凹凸形成所致。特佳是玻璃轉移溫度以上之飽和區中的貯藏彈性率為1×107Pa以下。在此，所謂玻璃轉移溫度以上之飽和區係指隔著玻璃轉移點大幅降低的貯藏彈性率之降低開始飽和，且貯藏彈性率之降低的變化變少的區域。 In addition, it is important that the thermoplastic resin film 1 has dynamic viscoelastic properties such that the storage elastic modulus in the saturation region above the glass transition temperature is 2×10 7 Pa or less. The reason for this is that the thermoplastic resin film 1 can be easily formed with irregularities as described later. It is particularly preferable that the storage elastic modulus in the saturation zone above the glass transition temperature is 1×10 7 Pa or less. Here, the "saturation zone above the glass transition temperature" refers to a region where the decrease in the storage elastic modulus that is greatly reduced across the glass transition point begins to saturate, and the change in the decrease in the storage elastic modulus becomes less.

更且，熱塑性樹脂膜1較佳是具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為玻璃轉移溫度以下之穩定區中的貯藏彈性率之1/100以下的動態黏彈性特性。在此，所謂玻璃轉移溫度以下之穩定區係指從常溫至玻璃轉移點溫度之稍前的溫度為止之貯藏彈性率的變化比較少的區域。 Furthermore, the thermoplastic resin film 1 preferably has dynamic viscoelastic properties such that the storage elasticity in the saturated zone above the glass transition temperature is less than 1/100 of the storage elastic modulus in the stable zone below the glass transition temperature. Here, the stable zone below the glass transition temperature refers to a region where the storage elastic modulus changes relatively little from room temperature to a temperature slightly before the glass transition point temperature.

例如，圖2係顯示本實施例的熱塑性樹脂膜1(本發明材料)、與習知的熱塑性樹脂膜(以下，稱為習知材料)之動態黏彈性特性的貯藏彈性率之溫度依存性。在此，圖2的橫軸為溫度(℃)，縱軸為貯藏彈性率E′(Pa)。又，穩定區及飽和區係根據各自的材料而溫度範圍會有所不同。 For example, FIG. 2 shows the temperature dependence of the storage elastic modulus of the dynamic viscoelastic properties of the thermoplastic resin film 1 (the material of the present invention) and the conventional thermoplastic resin film (hereinafter referred to as the conventional material) of this embodiment. Here, the horizontal axis of Fig. 2 represents temperature (°C), and the vertical axis represents storage elastic modulus E'(Pa). In addition, the temperature range of the stable zone and the saturated zone varies according to the respective materials.

如圖2所示，從常溫至比熱塑性樹脂膜1之玻璃轉移溫度(約258℃)更些微低的約240℃為止，熱塑性樹脂膜1的動態黏彈性特性之貯藏彈性率為4×109Pa且維持大致一定的值。亦即，如圖2所示，在熱塑性樹脂膜1中，從常溫至約240℃為止係成為穩定區。又，當成為240℃以上時， 貯藏彈性率就會急遽地降低，且在熱塑性樹脂膜1的玻璃轉移溫度中，約為2×108Pa。更且，即便是在超過玻璃轉移溫度的溫度範圍中，貯藏彈性率仍會急遽地降低，且在約255℃中，成為比約2×107Pa更小，在約270℃中約為1×107Pa。然後，當成為約270℃以上時，貯藏彈性率就會減少至約1×107Pa以下為止。尤其是，在本實施例中，係將熱塑性樹脂膜1的飽和區設為約255℃以上的溫度範圍。從而，本實施例的熱塑性樹脂膜1之飽和區中的動態黏彈性特性之貯藏彈性率的值係成為2×108Pa以下。又，如從圖2可知，本實施例的熱塑性樹脂膜1係具有玻璃轉移溫度以上(具體而言為270℃以下)之飽和區中的貯藏彈性率，成為玻璃轉移溫度以下(具體而言為240℃以上)之穩定區中的貯藏彈性率之約1/100以下的特性。 As shown in Fig. 2, from normal temperature to about 240°C which is slightly lower than the glass transition temperature (about 258°C) of the thermoplastic resin film 1, the storage elastic modulus of the dynamic viscoelastic properties of the thermoplastic resin film 1 is 4×10 9 Pa is maintained at a substantially constant value. That is, as shown in FIG. 2, in the thermoplastic resin film 1, it becomes a stable area|region from normal temperature to about 240 degreeC. Moreover, when it becomes 240 degreeC or more, the storage elastic modulus will fall rapidly, and the glass transition temperature of the thermoplastic resin film 1 becomes about 2*10 8 Pa. Furthermore, even in the temperature range exceeding the glass transition temperature, the storage elastic modulus will drop sharply, and it becomes smaller than about 2×10 7 Pa at about 255°C, and about 1 at about 270°C. ×10 7 Pa. Then, when it becomes about 270°C or higher, the storage elastic modulus will decrease to about 1×10 7 Pa or less. In particular, in this embodiment, the saturation zone of the thermoplastic resin film 1 is set to a temperature range of about 255°C or higher. Therefore, the value of the storage elastic modulus of the dynamic viscoelastic properties in the saturation region of the thermoplastic resin film 1 of this example is 2×10 8 Pa or less. In addition, as can be seen from FIG. 2, the thermoplastic resin film 1 of the present embodiment has a storage elastic modulus in the saturation zone above the glass transition temperature (specifically, 270°C or less), and becomes below the glass transition temperature (specifically, The storage elastic modulus in the stable zone above 240℃) is less than 1/100 of the characteristic.

如此的貯藏彈性率係將熱塑性樹脂膜1的原材料選擇為預定的材料，並可以藉由調整結晶結構來實現。在本實施例的情況下，係選擇三井化學股份有限公司的AURUM(註冊商標)作為原材料，藉由熱塑性樹脂膜1的結晶結構具有更多的醚鍵結結合(ether linkage)部分，就可以實現上述特性。 Such a storage elastic modulus is achieved by selecting the raw material of the thermoplastic resin film 1 as a predetermined material, and can be achieved by adjusting the crystal structure. In the case of this embodiment, AURUM (registered trademark) of Mitsui Chemicals Co., Ltd. is selected as the raw material, and the crystalline structure of the thermoplastic resin film 1 has more ether linkage parts, which can be achieved The above characteristics.

另一方面，在如圖2所示的習知品中，係在從常溫至約260℃為止的穩定區中，貯藏彈性率為3×109Pa且維持大致一定的值，而在玻璃轉移溫度(270℃)中，貯藏彈性率為約1.8×108Pa，即便超過300℃，貯藏彈性率仍會穩定在4×107Pa左右。如從圖2可知，習知品的飽和區係成為約290 ℃以上的溫度範圍。根據此等，習知品的貯藏彈性率(黏度)之降低係比此次使用的熱塑性樹脂膜1還小。 On the other hand, in the conventional product as shown in Fig. 2, the storage elastic modulus is 3×10 9 Pa in a stable zone from normal temperature to about 260°C, and the storage elasticity is maintained at a substantially constant value, while at the glass transition temperature ( In 270℃), the storage elastic modulus is about 1.8×10 8 Pa. Even if it exceeds 300℃, the storage elastic modulus will be stable at about 4×10 7 Pa. As can be seen from Fig. 2, the saturation zone of the conventional product is in the temperature range of about 290°C or higher. Based on these, the reduction in the storage elastic modulus (viscosity) of the conventional product is smaller than that of the thermoplastic resin film 1 used this time.

再者，所準備的樹脂膜並未被限定於熱塑性型，只要是具備上述貯藏彈性率及比較大的斷裂伸度的樹脂膜亦可使用熱硬化性樹脂膜、或是具備將熱硬化性樹脂和熱塑性樹脂積層所得(亦即，使熱塑性樹脂膜和熱硬化性樹脂膜貼合在一起所得)之結構的複合樹脂膜。在此，所謂比較大的斷裂伸度係指至少50%以上的值，較佳為150%以上。有關斷裂伸度係依所成型的立體形狀而被要求所需的特性，且在具有複雜且較大之段差形狀的情況下，則需要具有更大之斷裂伸度強度的樹脂膜材料，以便能耐受藉由立體成型所製造的材料。 Furthermore, the prepared resin film is not limited to the thermoplastic type. As long as it has the above-mentioned storage elastic modulus and relatively large elongation at break, a thermosetting resin film can be used, or a thermosetting resin can be used. A composite resin film with a structure that is laminated with a thermoplastic resin (that is, a thermoplastic resin film and a thermosetting resin film are bonded together). Here, the so-called relatively large elongation at break means a value of at least 50% or more, and preferably 150% or more. Regarding the breaking elongation, the required characteristics are required according to the molded three-dimensional shape, and in the case of a complex and large step shape, a resin film material with greater breaking elongation strength is required to be able to Resistant to materials made by three-dimensional molding.

其次，對熱塑性樹脂膜1的雙面(第一面1a及第二面1b)施予加熱及加壓，且在熱塑性樹脂膜1的雙面形成複數個凹凸(錨定(anchor))(凹凸形成步驟)。具體而言，如圖3所示，將表面粗面化後的金屬箔2、3一邊加熱，一邊壓抵於熱塑性樹脂膜1的第一面1a及第二面1b。更具體而言，將金屬箔2之粗面化後的粗化面2a壓抵於熱塑性樹脂膜1的第一面1a，將金屬箔3之粗面化後的粗化面3a壓抵於熱塑性樹脂膜1的第二面1b，並藉由金屬箔2、3來包夾熱塑性樹脂膜1。然後，在將熱塑性樹脂膜1加熱至玻璃轉移溫度以上(例如，約270℃以上)之後，藉由預定的壓力來加壓。在本實施形態中，係以加熱溫度為330℃、加壓為25Kg/cm2、處理時間為20分鐘的條件來進行壓製處理 (pressing treatment)。又，雖然本實施例中的金屬箔2、3之厚度約12μm，粗化面2a、3a中的十點平均粗糙度Rz為5μm至8μm，但是按照最終所製造的立體配線基板之用途及所要求的可靠度等，此等的數值係可以做適當變更。再者，金屬箔2、3的材料，例如亦可為銅，或是可以使用其他之加工性容易的金屬材料。 Next, heat and pressure are applied to both sides (first side 1a and second side 1b) of the thermoplastic resin film 1, and a plurality of concavities and convexities (anchor) are formed on both sides of the thermoplastic resin film 1. Formation step). Specifically, as shown in FIG. 3, the metal foils 2 and 3 whose surfaces have been roughened are pressed against the first surface 1a and the second surface 1b of the thermoplastic resin film 1 while being heated. More specifically, the roughened surface 2a of the metal foil 2 is pressed against the first surface 1a of the thermoplastic resin film 1, and the roughened surface 3a of the metal foil 3 is pressed against the thermoplastic The second side 1b of the resin film 1 is wrapped with the thermoplastic resin film 1 by metal foils 2 and 3. Then, after heating the thermoplastic resin film 1 to a glass transition temperature or higher (for example, about 270° C. or higher), it is pressurized with a predetermined pressure. In this embodiment, the heating temperature is 330°C, the pressure is 25 Kg/cm 2 , and the treatment time is 20 minutes to perform the pressing treatment. In addition, although the thickness of the metal foils 2 and 3 in this embodiment is about 12 μm, and the ten-point average roughness Rz of the roughened surfaces 2a, 3a is 5 μm to 8 μm, the final three-dimensional wiring board is manufactured according to the application and the method. The required reliability, etc., these values can be changed appropriately. Furthermore, the material of the metal foils 2 and 3 may be copper, for example, or other metal materials with easy workability may be used.

藉由施予使用上述金屬箔2、3的加壓及加熱，就能使熱塑性樹脂膜1軟化，進入形成金屬箔2之粗化面2a的凹部，且能使熱塑性樹脂膜1和金屬箔2貼合。同樣地，軟化後的熱塑性樹脂膜1能進入形成金屬箔3之粗化面3a的凹部，且能使熱塑性樹脂膜1和金屬箔3貼合。亦即，進行如圖4所示之將金屬箔2、3貼合於熱塑性樹脂膜1的貼合步驟。藉由如此的貼合步驟，就能對熱塑性樹脂膜1的雙面，轉印金屬箔2、3之粗化面2a、3a的表面形狀，且在熱塑性樹脂膜1的雙面形成有複數個凹凸。亦即，在本實施例中，藉由將金屬箔2、3的材料設為銅，就能在雙面上形成有貼合有銅箔的可撓性銅箔基板(FCCL：Flexible Copper Clad Laminate)同等品。 By applying pressure and heating using the above-mentioned metal foils 2, 3, the thermoplastic resin film 1 can be softened, enter the recesses forming the roughened surface 2a of the metal foil 2, and can make the thermoplastic resin film 1 and the metal foil 2 fit. Similarly, the softened thermoplastic resin film 1 can enter the recesses forming the roughened surface 3a of the metal foil 3, and the thermoplastic resin film 1 and the metal foil 3 can be bonded together. That is, the bonding step of bonding the metal foils 2 and 3 to the thermoplastic resin film 1 as shown in FIG. 4 is performed. Through such a bonding step, the surface shape of the roughened surfaces 2a, 3a of the metal foils 2, 3 can be transferred to the both sides of the thermoplastic resin film 1, and plural pieces are formed on both sides of the thermoplastic resin film 1. Bumpy. That is, in this embodiment, by setting the material of the metal foils 2 and 3 to copper, it is possible to form a flexible copper foil substrate (FCCL: Flexible Copper Clad Laminate) to which copper foil is bonded on both sides. ) Equivalent.

特別是在本實施形態中，因使用具備如圖2所示的動態黏彈性特性之貯藏彈性率的熱塑性樹脂膜1，故而在藉由加熱與加壓來貼合金屬箔2、3時，熱塑性樹脂膜1之黏度會更大幅地降低並增加流動性，且容易使熱塑性樹脂膜1流入粗化面2a、3a。亦即，可以容易且確實地進行凹凸形成步驟。另一方面，由於習知品係即便超過300℃流動 性仍較低，所以即便藉由加熱與加壓來貼合具備粗化面的金屬箔，習知品仍無法流入該粗化面，且無法將金屬箔的粗化面高精度地轉印於習知品的表面。 Especially in this embodiment, since the thermoplastic resin film 1 having the storage elastic modulus with dynamic viscoelastic properties as shown in FIG. 2 is used, when the metal foils 2 and 3 are bonded by heating and pressing, the thermoplastic resin film The viscosity of the resin film 1 will be more greatly reduced and fluidity will be increased, and the thermoplastic resin film 1 will easily flow into the roughened surfaces 2a, 3a. That is, the unevenness forming step can be easily and surely performed. On the other hand, because the conventional strain flows even if it exceeds 300℃ The performance is still low, so even if the metal foil with the roughened surface is laminated by heating and pressing, the conventional product cannot flow into the roughened surface, and the roughened surface of the metal foil cannot be transferred to the conventional product with high precision. surface.

在此，作為將凹凸形成熱塑性樹脂膜1之表面的方法，雖然已選擇藉由高溫壓製(high temperature press)來使粗化後的金屬箔2、3之凹凸進行轉印的方法，但是亦可採用其他的方法，例如採用藉由機械式的拋光研磨(buff polish)或聚醯亞胺膜成分之選擇性的去除來形成凹凸的化學研磨等的方法。然而，用於印刷配線板的銅箔之凹凸形狀係凸部前端比凸部的根部更大且能形成鉤爪的形狀，相對於此，在以機械研磨或化學研磨將凹凸直接附在熱塑性樹脂膜1的表面的方法中，較多的情況是很難在具有鉤爪的形狀上形成凹凸且密接強度較低。 Here, as a method of forming irregularities on the surface of the thermoplastic resin film 1, although a method of transferring the irregularities of the roughened metal foils 2, 3 by high temperature press has been selected, it may be Other methods are used, for example, chemical polishing for forming unevenness by mechanical buff polishing or selective removal of polyimide film components. However, the copper foil used for printed wiring boards has an uneven shape such that the tip of the protrusion is larger than the root of the protrusion and can form a hook shape. In contrast, the uneven shape is directly attached to the thermoplastic resin film by mechanical polishing or chemical polishing. In the surface method of 1, in many cases, it is difficult to form irregularities in a shape having hooks and the adhesion strength is low.

接著，如圖5所示，為了確保熱塑性樹脂膜1之表背面(第一面1a、及第二面1b)中的導通，而使用NC(數值控制)加工、雷射加工、或衝孔(punching)加工等的開口技術來形成貫通孔4。在本實施例中，係將貫通孔4的開口徑設為0.3mm。再者，在圖5中，雖然僅顯示一個貫通孔4，但是在實際的立體配線基板中係具有複數個貫通孔4。又，貫通孔4的數量亦可以按照立體配線基板的電路構成做適當變更。更且，亦可將後面所述之使用作為立體成型時之定位用的定位孔(例如，開口徑為3mm)，形成複數個於熱塑性樹脂膜1的外緣部分(亦即，最終不構成立體配線基板而是被去除的部分)。 Next, as shown in FIG. 5, in order to ensure conduction between the front and back surfaces (first side 1a and second side 1b) of the thermoplastic resin film 1, NC (numerical control) processing, laser processing, or punching ( The through hole 4 is formed by an opening technique such as punching. In this embodiment, the opening diameter of the through hole 4 is set to 0.3 mm. In addition, in FIG. 5, although only one through hole 4 is shown, there are a plurality of through holes 4 in an actual three-dimensional wiring board. In addition, the number of through holes 4 may be appropriately changed according to the circuit configuration of the three-dimensional wiring board. Furthermore, the latter can also be used as positioning holes for positioning during three-dimensional molding (for example, the opening diameter is 3 mm), and a plurality of them are formed on the outer edge of the thermoplastic resin film 1 (that is, the final three-dimensional structure is not formed). The wiring board is the removed part).

之後，在熱塑性樹脂膜1貼合有金屬箔2、3的狀態下(亦即，對可撓性銅箔積層板)，施予使用氯化銅(cupric chloride)等的蝕刻處理，且去除金屬箔2、3(去除步驟)。藉此，如圖6所示，能使轉印有金屬箔2、3之粗化面2a、3a的表面形狀的熱塑性樹脂膜1之雙面露出。亦即，能使具備凹凸狀之形狀的第一面1a及第二面1b露出。藉由經過上面所述的貼合步驟及去除步驟而完成凹凸形成步驟。 After that, in the state where the metal foils 2 and 3 are attached to the thermoplastic resin film 1 (that is, to the flexible copper foil laminate), an etching treatment using cupric chloride or the like is applied, and the metal is removed Foil 2, 3 (removal step). Thereby, as shown in FIG. 6, both sides of the thermoplastic resin film 1 to which the surface shape of the roughened surface 2a, 3a of the metal foil 2, 3 was transferred can be exposed. That is, it is possible to expose the first surface 1a and the second surface 1b having a concave-convex shape. The concave-convex forming step is completed by going through the bonding step and the removing step described above.

其次，以被覆熱塑性樹脂膜1的第一面1a、第二面1b、以及藉由貫通孔而露出的熱塑性樹脂膜1之側面的方式，在熱塑性樹脂膜1的表面上形成第一金屬膜5(第一金屬膜形成步驟)。在本實施例中，係在熱塑性樹脂膜1的表面上，藉由一般的無電電鍍來使金屬進行金屬化。 Next, a first metal film 5 is formed on the surface of the thermoplastic resin film 1 by covering the first surface 1a, the second surface 1b of the thermoplastic resin film 1, and the side surfaces of the thermoplastic resin film 1 exposed by the through holes. (First metal film forming step). In this embodiment, the metal is metalized on the surface of the thermoplastic resin film 1 by general electroless plating.

作為具體的步驟，首先是將形成有凹凸的熱塑性樹脂膜1含浸於催化劑溶液(catalyst solution)(Sn(錫)-Pd(鈀)膠體(colloid)水溶液)中。在此，Sn-Pd膠體係能電性吸附於熱塑性樹脂膜1的表面。之後，當將Sn-Pd膠體已受載於表面之狀態下的熱塑性樹脂膜1含浸於加速劑溶液(accelerator solution)中時，已覆蓋Pd之周圍的Sn就被去除，且使Pd離子變化成金屬Pd。亦即，進行催化處理以使催化劑(例如Pd)受載於熱塑性樹脂膜1(圖7)。再者，作為加速劑溶液係可以使用含有草酸(oxalic acid)(0.1%左右)的硫酸(濃度為10%)。之後，將受載有作為催化劑之Pd的熱塑性樹脂膜1浸漬於無電電鍍槽中5分鐘。藉由該浸漬，將Pd作為 催化劑而例如析出銅，且以覆蓋熱塑性樹脂膜1之表面的方式，完成第一金屬膜5的形成(圖8)。 As a specific step, firstly, the thermoplastic resin film 1 formed with unevenness is immersed in a catalyst solution (Sn (tin)-Pd (palladium) colloid aqueous solution). Here, the Sn-Pd glue system can be electrically adsorbed on the surface of the thermoplastic resin film 1. After that, when the thermoplastic resin film 1 in the state where the Sn-Pd colloid has been loaded on the surface is immersed in an accelerator solution, the Sn that has covered the surrounding Pd is removed and the Pd ions are changed into Metal Pd. That is, a catalytic treatment is performed so that a catalyst (for example, Pd) is supported on the thermoplastic resin film 1 (FIG. 7). Furthermore, as the accelerator solution system, sulfuric acid (with a concentration of 10%) containing oxalic acid (about 0.1%) can be used. After that, the thermoplastic resin film 1 carrying Pd as a catalyst was immersed in an electroless plating bath for 5 minutes. With this impregnation, Pd is used as The catalyst precipitates copper, for example, and forms the first metal film 5 so as to cover the surface of the thermoplastic resin film 1 (FIG. 8 ).

在本實施例中，係使用銅作為第一金屬膜5的金屬，且如圖8所示，無電電鍍係能生成粒子狀，且藉由銅的粒子5a使第一金屬膜5形成為多孔狀。在此，所謂多孔狀係指雖然第一金屬膜5沒有具備完整地形成膜狀的膜厚，但是會藉由粒子彼此非為全部的至少一部分接觸來使膜整體導通的狀態(並非一定需要電性導通，而是只要即便立體成型中的粒子間距離分離，仍能以後面所述的第二金屬膜來導通即可)。又，在本實施例中，因熱塑性樹脂膜1的第一面1a及第二面1b係成為凹凸狀的錨定面，故而即便是在各面的凹部內仍能沉積銅粒子並形成多孔狀的覆膜。將此等換言之，在本實施形態中，係形成具備將銅沉積後之膜厚(可以使光穿透之膜厚)的第一金屬膜5，該銅係與使銅在平板上沉積0.05μm以上0.50μm以下的情況同等量。在本實施例中，係以具有將銅沉積後之膜厚的方式來形成第一金屬膜5，該銅係與使銅在平板上沉積0.1μm的情況同等量。 In this embodiment, copper is used as the metal of the first metal film 5, and as shown in FIG. 8, the electroless plating system can produce particles, and the copper particles 5a make the first metal film 5 porous. . Here, the “porous” refers to a state in which although the first metal film 5 does not have a film thickness that is completely formed into a film shape, but at least a part of the particles are in contact with each other to make the entire film conductive (not necessarily electrical However, even if the distance between the particles in the three-dimensional molding is separated, the second metal film described later can still be conducted). In addition, in this embodiment, since the first surface 1a and the second surface 1b of the thermoplastic resin film 1 are anchoring surfaces with unevenness, copper particles can be deposited and formed into a porous shape even in the recesses on each surface. Of the film. In other words, in the present embodiment, the first metal film 5 having a film thickness (a film thickness that allows light to pass through) after copper deposition is formed, and the copper system and the copper are deposited on a flat plate of 0.05 μm Above 0.50μm or less, the same amount. In this embodiment, the first metal film 5 is formed to have a film thickness after copper is deposited, and the copper is the same amount as the case where copper is deposited on a flat plate by 0.1 μm.

如此調整第一金屬膜5之狀態(亦即，膜厚)的理由係當欲將第一金屬膜5形成不使光穿透之完整的膜狀時，即便在進行後面所述的立體成型時已在第一金屬膜5產生龜裂，仍很難藉由後面所述的第二金屬膜來修復該龜裂所致。更具體而言，當上述數值比0.05μm還小時，在形成於樹脂上的凹漥部分就會產生不析出銅的部分，且在後面所述 的第二金屬膜之形成中無法使第二金屬膜充填於凹部而使密接大幅地降低。又，延伸後的粒子間距離過度分離而變得很難以後面所述的第二金屬膜來修復導通。又，在使光穿透之狀態下延伸的情況下，由於僅空出粒子間的距離所以龜裂較小，但是當以光不穿透之完整的膜狀來延伸時，就會在已超過界限的金屬膜(第一金屬膜5)產生龜裂且成為寬度較寬的裂痕。 The reason for adjusting the state (ie, the film thickness) of the first metal film 5 in this way is that when the first metal film 5 is to be formed into a complete film shape that does not allow light to pass through, even when performing the three-dimensional molding described later A crack has occurred in the first metal film 5, and it is still difficult to repair the crack caused by the second metal film described later. More specifically, when the above-mentioned value is smaller than 0.05 μm, a portion where copper does not precipitate will occur in the concave portion formed on the resin, and it will be described later In the formation of the second metal film, the second metal film cannot be filled in the recessed portion, which greatly reduces the adhesion. In addition, the distance between the particles after the stretch is excessively separated, and it becomes difficult to repair the conduction with the second metal film described later. In addition, in the case of extending in a state where light penetrates, the cracks are small because only the distance between the particles is left, but when it is extended in a complete film that does not penetrate light, it will exceed The boundary metal film (first metal film 5) is cracked and becomes a crack with a wide width.

以下，更詳細地說明第一金屬膜5形成為多孔狀的步驟。當從圖9所示的銅已在凹凸表面開始析出的狀態更進一步持續銅的析出時，新析出的銅就會與已經析出的銅進行化學鍵結。此時，藉由銅的自催化作用(autocatalysis)，因作為催化劑的Pd之活性度較高，故而銅的生成會朝向沿著凹凸的面方向(亦即，朝向熱塑性樹脂膜1之表面擴展的方向)前進，但是亦會朝向厚度方向(亦即，第一金屬膜5的膜厚方向)開始前進。然後，當開始銅的自催化作用時，銅就會依順序析出並推進銅彼此的金屬結合，且銅的成長係更朝向厚度方向推進，藉此增加膜厚。在此狀態下，如圖10所示，雖然存在有不存在銅的空隙部分，且有局部未獲得電性導通的部分，但是作為已被形成的金屬膜整體，因存在電性的連接路徑，故而能獲得電性導通。如上面所述般，如此的狀態係意指本實施例中的多孔狀。然後，在如此的多孔狀之第一金屬膜5中，即便超過銅的斷裂引伸率，仍不會產生較大的裂痕，而是止於銅分子彼此的距離會局部擴展若干。 Hereinafter, the step of forming the first metal film 5 into a porous shape will be described in more detail. When the precipitation of copper continues from the state in which copper has begun to precipitate on the uneven surface shown in FIG. 9, the newly precipitated copper will chemically bond with the already precipitated copper. At this time, due to the autocatalysis of copper, since the activity of Pd as a catalyst is high, the production of copper is directed toward the direction along the uneven surface (that is, toward the surface of the thermoplastic resin film 1 Direction), but it also starts to advance in the thickness direction (that is, the film thickness direction of the first metal film 5). Then, when the autocatalysis of copper starts, copper will precipitate in order and promote the metal bonding between coppers, and the growth of copper will advance in the thickness direction, thereby increasing the film thickness. In this state, as shown in Figure 10, although there are voids where copper is not present, and there are some parts where electrical conduction is not obtained locally, as the entire formed metal film, there is an electrical connection path, Therefore, electrical conduction can be obtained. As described above, such a state means the porous state in this embodiment. Then, in such a porous first metal film 5, even if the elongation at break of copper is exceeded, large cracks will not be generated, but the distance between the copper molecules will locally expand slightly.

又，在本實施例中，因熱塑性樹脂膜1的第一面1a及第二面1b係成為凹凸狀之錨定面，故而可以藉由錨定效果來牢固地接合熱塑性樹脂膜1和第一金屬膜5。在本實施例中，係從在熱塑性樹脂膜1形成有第一金屬膜5的狀態起，更進一步施予後面所述的第二金屬膜之形成，有關第二金屬膜之厚度設為10μm的情況之密接係可以獲得約15N/cm之比較高的剝離強度(peel strength)。另一方面，在使用圖2所示的習知品的情況下，則無法輕易地進行對習知品的凹凸形成，且無法使習知品和以無電電鍍所形成的金屬膜牢固地密接。在實驗中，可明白有關習知品與以無電電鍍所形成的金屬膜之密接係僅能獲得2N/cm以下的剝離強度，且在習知品中金屬膜會剝離。 In addition, in this embodiment, since the first surface 1a and the second surface 1b of the thermoplastic resin film 1 are formed as concave and convex anchoring surfaces, the anchoring effect can firmly bond the thermoplastic resin film 1 and the first surface 1b. Metal film 5. In this embodiment, from the state in which the first metal film 5 is formed on the thermoplastic resin film 1, the second metal film described later is further applied to form the second metal film. The thickness of the second metal film is set to 10 μm. In this case, the close bonding system can obtain a relatively high peel strength of about 15N/cm. On the other hand, when the conventional product shown in FIG. 2 is used, the uneven formation on the conventional product cannot be easily performed, and the conventional product cannot be firmly adhered to the metal film formed by electroless plating. In the experiment, it can be understood that the adhesion between the conventional product and the metal film formed by electroless plating can only achieve a peel strength of less than 2N/cm, and the metal film will peel off in the conventional product.

又，第一金屬膜5的材料並未被限定於銅，例如，亦可使用銀、金、或鎳等的各種金屬、或是至少含有此等的金屬及銅之其中一個的合金或積層各個金屬所得，但是較佳是使用比較柔軟且斷裂伸度強度較高的金屬。在此，因用以實現使光穿透且導通的狀態的膜厚係依使用的金屬而有所不同，故而在使用其他金屬的情況下，就要適當調整膜厚，以便可以實現第一金屬膜5形成為多孔狀。 In addition, the material of the first metal film 5 is not limited to copper. For example, various metals such as silver, gold, or nickel, or alloys or laminates containing at least one of these metals and copper may also be used. Metal is obtained, but it is preferable to use a metal that is relatively soft and has a high tensile strength at break. Here, since the thickness of the film used to realize the state of allowing light to penetrate and conduct is different depending on the metal used, when other metals are used, the film thickness must be adjusted appropriately so that the first metal can be realized The membrane 5 is formed in a porous shape.

再者，在本實施例中，雖然是以被覆熱塑性樹脂膜1的第一面1a、第二面1b、以及藉由貫通孔所露出的熱塑性樹脂膜1之側面的方式，形成第一金屬膜5，但是亦可按照所要求的立體配線基板之結構及特性，僅在熱塑性樹脂膜1的第一面1a或第二面1b之其中任一面形成第一金屬 膜5。亦即，在本發明的立體配線基板，不僅能在雙面形成配線圖案，還涵蓋能僅在單面形成配線圖案。 Furthermore, in this embodiment, although the first surface 1a, the second surface 1b of the thermoplastic resin film 1 and the side surfaces of the thermoplastic resin film 1 exposed by the through holes are covered, the first metal film is formed. 5. However, according to the required structure and characteristics of the three-dimensional wiring board, the first metal can be formed only on either the first surface 1a or the second surface 1b of the thermoplastic resin film 1. 膜5。 Film 5. That is, in the three-dimensional wiring board of the present invention, not only the wiring pattern can be formed on both sides, but also the wiring pattern can be formed on only one side.

之後，對熱塑性樹脂膜1施予預定的加熱處理(例如，150℃、15分鐘)，而使第一金屬膜5的結晶結構安定化。 After that, a predetermined heat treatment (for example, 150° C., 15 minutes) is applied to the thermoplastic resin film 1 to stabilize the crystal structure of the first metal film 5.

其次，如圖11所示，藉由光微影術對第一金屬膜5施予圖案化處理，且形成所期望的配線圖案(圖案形成步驟)。具體而言，將感光性的阻劑膜(resist film)熱加壓於形成有第一金屬膜5之狀態下的熱塑性樹脂膜1之表面，且使用印刷有預定之圖案的遮罩膜(mask film)進行曝光及顯影。接著，將所顯影後的阻劑膜作為蝕刻遮罩(etching mask)並對第一金屬膜5施予蝕刻以形成所期望的配線圖案。之後，剝離去除該阻劑膜。在此，較佳是考慮藉由後面所述的立體成型所為的第一金屬膜5之伸度及變形，來事先修正配線圖案之形狀(配線寬度、配線長度、配線間隔等)。 Next, as shown in FIG. 11, a patterning process is applied to the first metal film 5 by photolithography, and a desired wiring pattern is formed (patterning step). Specifically, a photosensitive resist film (resist film) is heat-pressurized on the surface of the thermoplastic resin film 1 in the state where the first metal film 5 is formed, and a mask film printed with a predetermined pattern is used. film) for exposure and development. Next, the developed resist film is used as an etching mask and the first metal film 5 is etched to form a desired wiring pattern. After that, the resist film is peeled off. Here, it is preferable to correct the shape of the wiring pattern (wiring width, wiring length, wiring interval, etc.) in advance by considering the elongation and deformation of the first metal film 5 by the three-dimensional molding described later.

如此，因是藉由光微影術對第一金屬膜5施予圖案化，故而可以實現比使用噴墨印刷(inkjet printing)技術或凹版膠印印刷(gravure offset printing)技術等的圖案化形成更高精細的圖案。亦即，第一金屬膜5的解像度係比使用噴墨印刷技術或凹版膠印印刷技術等所圖案化的配線圖案更高(亦即，能實現直線性優異且高精細的配線形成)。 In this way, because the first metal film 5 is patterned by photolithography, it can achieve better patterning than using inkjet printing technology or gravure offset printing technology. High-precision patterns. That is, the resolution of the first metal film 5 is higher than that of a wiring pattern patterned using inkjet printing technology or gravure offset printing technology (that is, high-definition wiring formation with excellent linearity can be achieved).

其次，對形成有第一金屬膜5之狀態下的熱塑性樹脂膜1，施予加熱處理及加壓處理並進行立體成型(立體成型 步驟)。作為具體的立體成型步驟，首先是使用上面所述的複數個定位孔，並對成型用的模具11進行熱塑性樹脂膜1的定位。此是為了使成型位置與配線圖案位置一致所致，具體而言，係在與複數個定位孔對應的位置，事先將具有如與此嵌合之直徑的複數個銷設置於模具，且使該銷嵌入熱塑性樹脂膜1的定位孔以使位置對準。亦即，如圖12所示，在模具11的上部模具12與下部模具13之間配置熱塑性樹脂膜1。接著，如圖13所示，用上部加熱裝置14來加熱上部模具12，並且藉由下部加熱裝置15來對下部模具13進行加熱。在此，在本實施例中，因是對熱塑性樹脂膜1使用聚醯亞胺膜，故而加熱溫度可以調整在與材料之玻璃轉移點溫度同等附近或還高之240℃至350℃的範圍內(例如，280℃)，但是該加熱溫度能依熱塑性樹脂膜1的材料做適當調整。在此，加熱溫度，雖然需要在該玻璃轉移溫度以上，並在熱塑性樹脂膜1的耐熱溫度以下，但是較佳是在該範圍內設定於儘量低的溫度。此是為了減低藉由形成於熱塑性樹脂膜1上的第一金屬膜5與熱塑性樹脂膜1之加熱所引起的密接降低所致。 Next, the thermoplastic resin film 1 in the state where the first metal film 5 is formed is subjected to heat treatment and pressure treatment to perform three-dimensional molding (three-dimensional molding). step). As a specific three-dimensional molding step, firstly, the above-mentioned plural positioning holes are used, and the molding mold 11 is positioned for the thermoplastic resin film 1. This is to align the molding position with the wiring pattern position. Specifically, it is at positions corresponding to a plurality of positioning holes, and a plurality of pins having a diameter such as to be fitted therewith are set in the mold in advance, and the The pins are embedded in the positioning holes of the thermoplastic resin film 1 to align the positions. That is, as shown in FIG. 12, the thermoplastic resin film 1 is arranged between the upper mold 12 and the lower mold 13 of the mold 11. Next, as shown in FIG. 13, the upper mold 12 is heated by the upper heating device 14, and the lower mold 13 is heated by the lower heating device 15. Here, in this embodiment, since a polyimide film is used for the thermoplastic resin film 1, the heating temperature can be adjusted to be in the range of 240°C to 350°C which is close to or higher than the glass transition point temperature of the material (For example, 280°C), but the heating temperature can be appropriately adjusted according to the material of the thermoplastic resin film 1. Here, although the heating temperature needs to be higher than the glass transition temperature and lower than the heat resistance temperature of the thermoplastic resin film 1, it is preferable to set the temperature as low as possible within this range. This is to reduce the decrease in adhesion caused by the heating of the first metal film 5 formed on the thermoplastic resin film 1 and the thermoplastic resin film 1.

一邊進行該加熱處理，一邊使上部模具12及下部模具13接近，且對熱塑性樹脂膜1，從上下藉由所期望的壓力(例如，10MPa)進行壓製處理(圖14)。再者，所謂所期望的壓力係考慮熱塑性樹脂膜1的材料、當壓力過弱時就會使所期望的立體成型變得困難的此點來做適當調整。然後，在完成壓製處理後進行冷卻，之後，將熱塑性樹脂膜1從模具11取出(圖15)，且完成熱塑性樹脂膜1的立體成型。換 言之，完成立體配線基板用基材16之形成。再者，在圖12至圖15中，省略了第一金屬膜5的圖示。又，雖然亦取決於所要求的立體形狀，但是實際的立體配線基板之形狀係形成有複數個段差(凹凸)，故而模具11亦具有複數個段差(凹凸)，且亦可採用如上部模具12與下部模具13之複數個段差(凹凸)相互地嵌合的結構。 While performing this heat treatment, the upper mold 12 and the lower mold 13 are brought close, and the thermoplastic resin film 1 is pressed from above and below with a desired pressure (for example, 10 MPa) (FIG. 14 ). In addition, the so-called desired pressure is appropriately adjusted in consideration of the material of the thermoplastic resin film 1 and that when the pressure is too weak, the desired three-dimensional molding becomes difficult. Then, cooling is performed after the pressing process is completed, after which the thermoplastic resin film 1 is taken out from the mold 11 (FIG. 15 ), and the three-dimensional molding of the thermoplastic resin film 1 is completed. change In other words, the formation of the base material 16 for the three-dimensional wiring board is completed. In addition, in FIGS. 12 to 15, illustration of the first metal film 5 is omitted. In addition, although it also depends on the required three-dimensional shape, the shape of the actual three-dimensional wiring board is formed with a plurality of steps (concavities and convexities), so the mold 11 also has a plurality of steps (concavities and convexities), and the upper mold 12 can also be used. A structure that is fitted with a plurality of steps (concavities and convexities) of the lower mold 13 with each other.

如圖16所示，在已完成立體成型的熱塑性樹脂膜1(亦即，立體配線基板用基材16)上，容易因立體成型而在已屈曲的屈曲部1d產生龜裂17。在此，如圖16所示，所謂龜裂17係指依構成第一金屬膜5的銅之粒子5a的粒子間距離之擴大而產生的間隙，且與在光不穿透之完整的金屬膜狀中藉由該金屬膜延伸所產生的龜裂相較，其結構不同。再者，亦有依第一金屬膜5之成膜狀態、以及取決於立體成型的三維形狀，而不發生龜裂的情況。又，如圖16所示，雖然龜裂17係熱塑性樹脂膜1被延伸所造成，且第一金屬膜5會隨之使粒子間距離擴展，但是因第一金屬膜5被形成為多孔狀，故而龜裂17本身的寬度係與粒子5a的尺寸同等並變得非常小，更且，與第一金屬膜5由完整的膜狀所形成的情況相較，龜裂17的寬度亦會變小。亦即，本實施例的立體配線基板用基材16與第一金屬膜5由完整的膜狀所形成的情況相較，係成為能夠更容易進行龜裂17之修復的狀態。換言之，在使光穿透之狀態下被延伸的情況下，由於僅空出粒子間的距離所以龜裂17(粒子間的間隙)較小，但是當以光不穿透之完整的膜狀來延伸時，就會在已超過界限的金屬膜上產生龜裂且產生寬度較寬的裂痕。 As shown in FIG. 16, in the thermoplastic resin film 1 (that is, the base material 16 for a three-dimensional wiring board) that has been three-dimensionally molded, cracks 17 are easily generated in the bent portion 1d due to the three-dimensional molding. Here, as shown in FIG. 16, the so-called crack 17 refers to the gap generated by the expansion of the distance between the particles of copper 5a constituting the first metal film 5, and is related to the complete metal film that does not penetrate the light. Compared with the cracks produced by the extension of the metal film, the structure is different. Furthermore, there are cases where cracks do not occur depending on the film formation state of the first metal film 5 and the three-dimensional shape depending on the three-dimensional molding. Also, as shown in FIG. 16, although the cracks 17 are caused by the extension of the thermoplastic resin film 1, and the first metal film 5 expands the distance between particles, the first metal film 5 is formed into a porous shape. Therefore, the width of the crack 17 itself is the same as the size of the particle 5a and becomes very small. Moreover, compared with the case where the first metal film 5 is formed of a complete film, the width of the crack 17 also becomes smaller. . That is, the base material 16 for the three-dimensional wiring board of this embodiment is in a state where the crack 17 can be repaired more easily than when the first metal film 5 is formed in a complete film shape. In other words, when it is stretched while allowing light to penetrate, the crack 17 (the gap between the particles) is small because only the distance between the particles is left, but when it is a complete film that does not penetrate light When it is stretched, cracks are generated on the metal film that has exceeded the limit and cracks with a wider width are generated.

又，在本實施例中，因在熱塑性樹脂膜1的粗化面形成有第一金屬膜5，故而屈曲部1d上的龜裂17係具有與該粗化面之形狀相應的寬度較窄的直線狀及非直線狀之形狀。該直線狀及非直線狀之龜裂17係藉由後面所述的第二金屬膜之形成，就容易埋入金屬，且更容易進行第一金屬膜5中的導通恢復。 Furthermore, in this embodiment, since the first metal film 5 is formed on the roughened surface of the thermoplastic resin film 1, the crack 17 on the flexure portion 1d has a narrow width corresponding to the shape of the roughened surface. Linear and non-linear shapes. The linear and non-linear cracks 17 are formed by the second metal film described later, which makes it easier to embed the metal, and it is easier to restore the conduction in the first metal film 5.

更且，作為使屈曲部1d中的龜裂17之發生減少的方法亦可在藉由二片保護膜來包夾熱塑性樹脂膜1的狀態下，進行上面所述的立體成型。藉此，可以使屈曲部1d中的角隅部之形狀平滑若干，且可以抑制龜裂17的發生。在此，該保護膜較佳是由與熱塑性樹脂膜1同一材料所形成。更且，作為使屈曲部1d中的龜裂17之發生減少的方法亦可設計模具11，以使屈曲部1d中的角隅部之形狀彎曲，或是使其角度成為比90度更小(例如，75度至85度)。 Furthermore, as a method of reducing the occurrence of cracks 17 in the flexed portion 1d, the above-mentioned three-dimensional molding may be performed in a state where the thermoplastic resin film 1 is sandwiched by two protective films. Thereby, the shape of the corner portion in the flexed portion 1d can be made slightly smoother, and the occurrence of cracks 17 can be suppressed. Here, the protective film is preferably formed of the same material as the thermoplastic resin film 1. Furthermore, as a method of reducing the occurrence of cracks 17 in the flexed portion 1d, the mold 11 can also be designed to bend the shape of the corner portion of the flexed portion 1d or to make the angle smaller than 90 degrees ( For example, 75 degrees to 85 degrees).

再者，在本實施例中，雖然是使用上部模具12及下部模具13從上下對熱塑性樹脂膜1施予壓製處理，但是只要可以確保加熱壓製後的熱塑性樹脂膜1之厚度的均一性，且可以形成預定之立體形狀亦可使用真空壓製、或壓氣壓製(compressed air press)等其他的壓製加工方法。 Furthermore, in this embodiment, although the upper mold 12 and the lower mold 13 are used to press the thermoplastic resin film 1 from above and below, as long as it can ensure the uniformity of the thickness of the thermoplastic resin film 1 after heating and pressing, and It can be formed into a predetermined three-dimensional shape or other pressing processing methods such as vacuum pressing or compressed air press.

其次，以被覆立體配線基板用基材16的第一金屬膜5之表面的方式，形成第二金屬膜21(第二金屬膜形成步驟：圖17)。在本實施形態中，係藉由一般的無電電鍍將金屬 追加沉積於第一金屬膜5的表面上。 Next, the second metal film 21 is formed so as to cover the surface of the first metal film 5 of the base material 16 for a three-dimensional wiring board (second metal film forming step: FIG. 17). In this embodiment, the metal is deposited by general electroless plating It is additionally deposited on the surface of the first metal film 5.

作為具體的第二金屬膜形成步驟，首先是為了藉由成型步驟的加熱來去除已形成於立體配線基板用基材16之表面上的氧化層，而將立體配線基板用基材16浸漬於所期望的洗淨液(例如，酸性脫脂液(acid degreasing liquid)、5%硫酸液)中。接著，進行催化處理以使與第一金屬膜5置換的型式之催化劑(例如離子性Pd催化劑)在立體配線基板用基材16的第一金屬膜5中反應，之後將立體配線基板用基材16浸漬於無電電鍍液中。然後，僅對表面存在催化劑的第一金屬膜5之周圍選擇性地沉積金屬，在不成為配線電路的區域(亦即，熱塑性樹脂膜1的露出區域)不沉積金屬，且不需要第二金屬膜21之追加的圖案形成處理。 As a specific second metal film forming step, firstly, in order to remove the oxide layer formed on the surface of the three-dimensional wiring board substrate 16 by heating in the forming step, the three-dimensional wiring board substrate 16 is immersed in the In the desired cleaning liquid (for example, acid degreasing liquid, 5% sulfuric acid liquid). Next, a catalytic treatment is performed to cause a catalyst of the type substituted with the first metal film 5 (for example, an ionic Pd catalyst) to react in the first metal film 5 of the base material 16 for the three-dimensional wiring board, and then the base material for the three-dimensional wiring board 16 Immerse in electroless plating solution. Then, metal is selectively deposited only around the first metal film 5 where the catalyst is present on the surface, and no metal is deposited in the area that does not become a wiring circuit (that is, the exposed area of the thermoplastic resin film 1), and the second metal is not required The additional pattern formation process of the film 21.

在本實施例中，係使用銅作為第二金屬膜21的金屬，且使複數個銅的粒子(在圖17中，未圖示作為粒子，而是記載作為覆膜)沉積於第一金屬膜5的粒子5a上。在此，不用將第二金屬膜21形成為多孔狀，而是形成為完整的膜狀。尤其是，在本實施例中，可以藉由2小時的浸漬，來形成具備10μm以上之膜厚的第二金屬膜21。又，在本實施例中，構成第二金屬膜21的粒子係成長於構成第一金屬膜5的粒子5a之周圍，且對第二金屬膜21的厚度方向及與該厚度方向正交的方向(第二金屬膜21的平面方向)成長為同程度。藉此，可以形成第二金屬膜21，以便修復因立體成型而產生的第一金屬膜5的直線狀及非直線狀之龜裂17。亦即，藉由第二金屬膜21的形成，可以使藉由龜裂 17所引起的導通不良恢復，且形成作為可以實現確實之導通的配線電路(由第一金屬膜5及第二金屬膜21所構成的導體層)。在此，因藉由第二金屬膜21所為的龜裂17之修復係可以修復比第二金屬膜21的膜厚還大二倍左右的龜裂17之寬度，故而亦可將第二金屬膜21的膜厚調整在所假定的龜裂17之最大寬度的1/2倍以上，更佳是亦可調整在與龜裂17之寬度同程度的膜厚。又，該第二金屬膜21係與表層同樣地亦生成於貫通孔4的側面，即便是在暫時有藉由貫通孔4所引起的表背之導通不良的情況下仍能夠修復導通。 In this embodiment, copper is used as the metal of the second metal film 21, and a plurality of copper particles (not shown as particles in FIG. 17, but described as a coating) are deposited on the first metal film 5 on the particle 5a. Here, the second metal film 21 is not formed into a porous shape, but is formed into a complete film shape. In particular, in this embodiment, the second metal film 21 having a film thickness of 10 μm or more can be formed by immersion for 2 hours. Also, in this embodiment, the particles constituting the second metal film 21 grow around the particles 5a constituting the first metal film 5, and the thickness direction of the second metal film 21 and the direction orthogonal to the thickness direction (The plane direction of the second metal film 21) grows to the same degree. Thereby, the second metal film 21 can be formed to repair the linear and non-linear cracks 17 of the first metal film 5 caused by the three-dimensional molding. That is, by the formation of the second metal film 21, the cracking The conduction failure caused by 17 is recovered, and a wiring circuit (conductor layer composed of the first metal film 5 and the second metal film 21) that can achieve reliable conduction is formed. Here, because the repair system of the crack 17 by the second metal film 21 can repair the width of the crack 17 that is about two times larger than the film thickness of the second metal film 21, the second metal film can also be The film thickness of 21 is adjusted to more than 1/2 times the maximum width of the assumed crack 17, and it is more preferable to adjust the film thickness to the same level as the width of the crack 17. In addition, the second metal film 21 is also formed on the side surface of the through hole 4 like the surface layer, and the conduction can be repaired even if there is a temporary conduction failure of the front and back caused by the through hole 4.

又，如上面所述般，因有關熱塑性樹脂膜1與在第一金屬膜5鍍覆10μm之第二金屬膜21的密接係可以獲得約15N/cm之比較高的剝離強度，故而能防止因第二金屬膜21之形成時的殘留應力所引起的微小膨脹及金屬膜的剝離，且可以改善作為立體配線基板的可靠度。 In addition, as described above, since the adhesion system between the thermoplastic resin film 1 and the second metal film 21 plated with 10 μm on the first metal film 5 can achieve a relatively high peel strength of about 15 N/cm, it can prevent The minute expansion and peeling of the metal film caused by the residual stress during the formation of the second metal film 21 can improve the reliability as a three-dimensional wiring board.

更且，在本實施例中，作為配線電路所需要的導體層之層厚(配線圖案厚度)，雖然在第一金屬膜5的膜厚中不足，但是可以藉由形成第二金屬膜21來確保該導體層所需的膜厚，且可以使配線電阻值降低。 Furthermore, in this embodiment, although the thickness of the conductor layer (wiring pattern thickness) required for the wiring circuit is insufficient in the film thickness of the first metal film 5, it can be achieved by forming the second metal film 21 The required film thickness of the conductor layer is ensured, and the wiring resistance value can be reduced.

再者，在本實施例中，雖然是藉由無電電鍍來形成第二金屬膜21，但是只要可以最終僅在第一金屬膜5的表面上形成第二金屬膜21亦可使用其他的成膜技術(例如，電鍍等)。但是，在如本實施例般地藉由無電電鍍來形成第二 金屬膜21的情況下，雖然已獨立的配線(即該配線電路)即便是從成型體的外周部電性分離仍能夠形成，但是在藉由電鍍而形成第二金屬膜21的情況下，則需要全部的配線與成型體的外周部電性導通，且需要將供電線之設置包含在內並在設計時考慮。又，在此情況下，在已發生藉由立體成型所引起的非導通部分的情況時，因電氣並未從非導通部分先流動，故而無法形成第二金屬膜21。 Furthermore, in this embodiment, although the second metal film 21 is formed by electroless plating, as long as the second metal film 21 can be formed only on the surface of the first metal film 5, other film formation may be used. Technology (for example, electroplating, etc.). However, as in this embodiment, the second In the case of the metal film 21, although independent wiring (ie, the wiring circuit) can be formed even if it is electrically separated from the outer periphery of the molded body, when the second metal film 21 is formed by electroplating, then All wiring needs to be electrically connected to the outer periphery of the molded body, and the setting of the power supply line needs to be included and considered in the design. Also, in this case, when a non-conducting portion caused by three-dimensional molding has occurred, since electricity does not flow from the non-conducting portion first, the second metal film 21 cannot be formed.

再者，第二金屬膜21的材料，並不用被限定於銅，而是能使用鎳或是鎳鉻、鎳銅、金、或銀等的其他金屬或包括此等的合金，且可以按照立體配線基板所要求的特性及可靠度來適當調整其材料。 Furthermore, the material of the second metal film 21 is not limited to copper. Instead, nickel or other metals such as nickel-chromium, nickel-copper, gold, or silver, or alloys including these can be used. The characteristics and reliability required for the wiring board should be adjusted appropriately.

在經過上面所述的製造步驟之後，對第二金屬膜21的表面施予防鏽劑處理，藉此完成由熱塑性樹脂膜1、第一金屬膜5及第二金屬膜21所構成的立體配線基板30之製造。再者，亦可在立體配線基板30之表面的必要部分，進而形成由阻焊劑(solder resist)所構成的保護膜。有關該保護膜的形成亦可採用將設置有開口部的包覆層(cover lay)形成於立體物的方法、塗布感光性光阻油墨(resist ink)且藉由光微影術將開口部形成於立體物上的方法。 After the above-mentioned manufacturing steps, the surface of the second metal film 21 is treated with a rust inhibitor, thereby completing a three-dimensional wiring board composed of the thermoplastic resin film 1, the first metal film 5, and the second metal film 21 30's manufacturing. Furthermore, a protective film composed of a solder resist may be further formed on a necessary part of the surface of the three-dimensional wiring board 30. Regarding the formation of the protective film, a method of forming a cover lay provided with an opening on a three-dimensional object, coating photosensitive resist ink (resist ink), and forming the opening by photolithography can also be used. On three-dimensional objects.

如根據圖17及圖18可知，在本實施例的立體配線基板30中，在熱塑性樹脂膜1之表面已形成為多孔狀的第一金屬膜5上所產生的直線狀及非直線狀之龜裂，能藉由比第一金屬膜5更厚之膜厚所形成的第二金屬膜21來確實地 修復，且具備已防止配線電路之斷線之優異的可靠度。又，根據上面所述的製造方法，與MID基板相較，可以更容易地實現微細的配線圖案(例如，L/S=30μm/30μm)，且亦能實現小型化及低成本化。 As can be seen from FIGS. 17 and 18, in the three-dimensional wiring board 30 of this embodiment, linear and non-linear tortoises are generated on the first metal film 5 whose surface of the thermoplastic resin film 1 has been formed into a porous shape. The cracks can be reliably determined by the second metal film 21 formed by a thicker film thickness than the first metal film 5 Repair, and have excellent reliability to prevent the disconnection of the wiring circuit. Furthermore, according to the above-mentioned manufacturing method, it is easier to realize a fine wiring pattern (for example, L/S=30μm/30μm) than a MID substrate, and it is also possible to achieve miniaturization and cost reduction.

又，本實施例的立體配線基板30，相對於熱塑性樹脂膜1，因可以針對第一金屬膜5及在該第一金屬膜5上形成有10μm之第二金屬膜21的情況之密接，獲得約15N/cm之比較高的剝離強度，且能防止因第二金屬膜21之形成時的殘留應力所引起的微小膨脹及金屬膜的剝離，故而能抑制藉由在上述製造步驟後之各種步驟(阻焊劑形成、外形加工、零件安裝時的迴焊(reflow)等)施加之應力所引起的配線圖案(第一金屬膜5及第二金屬膜21)中的龜裂及斷線的發生。 In addition, the three-dimensional wiring board 30 of this embodiment can be closely attached to the thermoplastic resin film 1 when the first metal film 5 and the second metal film 21 with a thickness of 10 μm are formed on the first metal film 5. The relatively high peeling strength of about 15N/cm, and can prevent the small expansion and peeling of the metal film caused by the residual stress during the formation of the second metal film 21, so it can suppress the various steps after the above manufacturing steps (Formation of solder resist, external shape processing, reflow during component mounting, etc.) The occurrence of cracks and disconnection in the wiring pattern (first metal film 5 and second metal film 21) due to stress applied.

然後，如圖18所示，最終所形成的立體配線基板30係在X方向及Y方向之各自的位置，存在不同的Z方向之尺寸(亦即，高度)，且在XY平面形成有凹凸。再者，圖18係用以說明立體配線基板30之三維形狀的示意圖式，且省略了配線圖案及貫通孔。 Then, as shown in FIG. 18, the finally formed three-dimensional wiring board 30 has different positions in the X direction and the Y direction, has different dimensions (that is, height) in the Z direction, and has unevenness on the XY plane. Furthermore, FIG. 18 is a schematic diagram for explaining the three-dimensional shape of the three-dimensional wiring board 30, and the wiring patterns and through holes are omitted.

再者，因本實施例的立體配線基板30係在熱塑性樹脂膜1之表面(第一面1a及第二面1b)具有由第一金屬膜5及第二金屬膜21所構成的導體層，並且具有立體的形狀，故而可以應用於各種的用途。例如，當將熱塑性樹脂膜1形成比較厚(例如，100μm)時，就如圖19所示，能夠對安裝 於其他的安裝基板40上的電子零件41，一邊謀求電磁遮蔽，一邊將其他的電子零件42搭載於其表面。在此情況下，為了藉由位於電子零件41側(亦即內側)的導體層(第一金屬膜5及第二金屬膜21)來謀求電磁遮蔽，而不對位於內側的導體層施予圖案化(亦即，形成立體圖案(solid pattern))。又，立體配線基板30係使用焊錫或導電性接著劑等的接合構件而黏著固定於安裝基板40。再者，亦可藉由替換圖案化的導體層和未圖案化的導體層，在由立體配線基板30和安裝基板40所遮蔽的空間內配置電子零件42，且對電子零件41及電子零件42謀求電磁遮蔽。 Furthermore, because the three-dimensional wiring board 30 of this embodiment has a conductive layer composed of the first metal film 5 and the second metal film 21 on the surface (the first surface 1a and the second surface 1b) of the thermoplastic resin film 1, And it has a three-dimensional shape, so it can be used for various purposes. For example, when the thermoplastic resin film 1 is formed relatively thick (for example, 100 μm), as shown in FIG. The electronic components 41 on the other mounting substrates 40 are electromagnetically shielded while other electronic components 42 are mounted on the surface. In this case, in order to achieve electromagnetic shielding by the conductive layer (the first metal film 5 and the second metal film 21) located on the side (that is, the inner side) of the electronic component 41, the conductive layer located on the inner side is not patterned (That is, a solid pattern is formed). In addition, the three-dimensional wiring board 30 is adhesively fixed to the mounting board 40 by using a bonding member such as solder or conductive adhesive. Furthermore, by replacing the patterned conductor layer and the unpatterned conductor layer, the electronic components 42 can be arranged in the space shielded by the three-dimensional wiring substrate 30 and the mounting substrate 40, and the electronic components 41 and 42 Seek electromagnetic shielding.

更且，亦可將不施予圖案化的導體層予以接地使其具有作為GND層的功能，且在位於該未圖案化的導體層之相反側的導體層形成單獨的特性阻抗(impedance)控制圖案或差動阻抗控制圖案。藉由如此的結構，就可以在立體配線基板30中謀求阻抗控制。 Furthermore, the conductor layer that is not patterned can also be grounded to have the function as a GND layer, and a separate characteristic impedance (impedance) control is formed on the conductor layer on the opposite side of the unpatterned conductor layer Pattern or differential impedance control pattern. With such a structure, impedance control in the three-dimensional wiring board 30 can be achieved.

然後，在將熱塑性樹脂膜1形成比較薄(例如，50μm以下)的情況下，係可以將立體配線基板30接著於具備三維形狀之其他的模製樹脂，且當作成為習知MID基板之替代的複合體來使用。此是因熱塑性樹脂膜1較薄，故而即便將立體配線基板30接著於其他的模製樹脂，由立體配線基板30及其他的模製樹脂所構成的複合體之厚度仍不會變大，且可以確保作為該複合體的強度所致。又，該複合體，與以往所存在的MID基板相較，由於在熱塑性樹脂膜1的雙面形成有導體層，故而可以容易謀求設計的自由度、 外形尺寸的狹小化。 Then, when the thermoplastic resin film 1 is formed to be relatively thin (for example, 50 μm or less), the three-dimensional wiring board 30 can be attached to another molded resin having a three-dimensional shape, and it can be regarded as a substitute for the conventional MID substrate Complex to use. This is because the thermoplastic resin film 1 is thin, so even if the three-dimensional wiring board 30 is attached to another mold resin, the thickness of the composite body composed of the three-dimensional wiring board 30 and other mold resins will not increase, and It can be ensured as a result of the strength of the composite. In addition, compared with the conventional MID substrate, this composite has conductive layers formed on both sides of the thermoplastic resin film 1, so that the freedom of design can be easily achieved. Narrowing of external dimensions.

又，只要將立體成型後的二個部分形成平坦之熱塑性樹脂膜所連結的結構並施予用以連結二個部分的配線，就能獲得所謂的軟硬基板(flex-rigid board)之各種的結構、使用方法。 In addition, as long as the two parts after three-dimensional molding are formed into a structure connected by a flat thermoplastic resin film and wiring used to connect the two parts is applied, various types of so-called flex-rigid boards can be obtained. Structure and method of use.

[本發明的實施態樣] [Practice of the present invention]

本發明之第一實施態樣的立體配線基板係具有：立體的樹脂膜，係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；第一金屬膜，係形成於前述樹脂膜的表面上，且具備所期望的圖案；以及第二金屬膜，係形成於前述第一金屬膜上；前述樹脂膜係在前述第一金屬膜的形成面具備複數個凹凸；前述第一金屬膜係以成為將金屬沉積成粒子狀而成的多孔狀之結構的方式來調整膜厚。 The three-dimensional wiring board of the first embodiment of the present invention has: a three-dimensional resin film, which has dynamic viscoelastic properties with a storage elastic modulus of 2×10 7 Pa or less in the saturated zone above the glass transition temperature, and has a % Or more elongation at break; the first metal film is formed on the surface of the resin film and has a desired pattern; and the second metal film is formed on the first metal film; the resin film is The formation surface of the first metal film is provided with a plurality of irregularities; and the film thickness of the first metal film is adjusted so as to have a porous structure formed by depositing metal into particles.

在第一實施態樣中，因是使用圖案形成後的第一金屬膜來形成第二金屬膜，故而不需要用以將第一金屬膜及第二金屬膜圖案化的特殊的裝置或步驟等，且能實現更低成本且微細的配線圖案。又，因是在樹脂膜的凹凸形成面形成多孔狀之第一金屬膜，故而即便在第一金屬膜產生寬度較窄的直線狀及非直線狀之龜裂仍能藉由第二金屬膜容易且確實地修復，而能實現沒有導通不良且具備優異之可靠度的配線電路(第一金屬膜及第二金屬膜)。更且，因是在樹脂膜的表面形成有凹凸(錨定面)，故而可以藉由錨定效 果而牢固地接合樹脂膜和第一金屬膜與第二金屬膜，且可以針對兩構件的密接獲得比較高的剝離強度。然後，藉由獲得如此的剝離強度，就能防止因第二金屬膜之形成時的殘留應力所引起的微小膨脹及金屬膜的剝離，且可以改善作為立體配線基板的可靠度，更且，亦能抑制藉由立體配線基板完成後之各種步驟(阻焊劑形成、外形加工、零件安裝時的迴焊等)施加之應力而在配線圖案發生龜裂或斷線。根據以上，本發明的立體配線基板係能謀求樹脂膜與作為配線電路之材料的金屬之剝離的防止、配線電路的微細加工、以及配線電路之斷線的防止，並具備優異的可靠度，並且可以用低成本來製造。 In the first embodiment, because the patterned first metal film is used to form the second metal film, there is no need for special devices or steps for patterning the first metal film and the second metal film. , And can achieve a lower cost and fine wiring pattern. In addition, since the porous first metal film is formed on the uneven surface of the resin film, even if narrow linear and non-linear cracks are generated in the first metal film, the second metal film can be easily used. In addition, it can be repaired reliably, and a wiring circuit (first metal film and second metal film) that has no continuity failure and excellent reliability can be realized. Moreover, because the surface of the resin film has unevenness (anchor surface), it can be anchored As a result, the resin film and the first metal film and the second metal film are firmly bonded, and relatively high peel strength can be obtained for the close contact between the two members. Then, by obtaining such a peeling strength, it is possible to prevent minute expansion and peeling of the metal film caused by the residual stress during the formation of the second metal film, and to improve the reliability as a three-dimensional wiring board, moreover, It can suppress the occurrence of cracks or disconnection in the wiring pattern by the stress applied by the various steps after the completion of the three-dimensional wiring board (solder resist formation, contour processing, reflow during component mounting, etc.). Based on the above, the three-dimensional wiring board of the present invention can prevent the resin film and the metal as the material of the wiring circuit from peeling off, the microfabrication of the wiring circuit, and the prevention of the disconnection of the wiring circuit, and has excellent reliability, and Can be manufactured at low cost.

本發明之第二實施態樣的立體配線基板係如上面所述的第一實施態樣，其中前述第二金屬膜係修復在前述樹脂膜的屈曲部中產生於前述第一金屬膜的直線狀及非直線狀之龜裂。藉此，不會在配線電路上發生導通不良，而可以實現優異的可靠度。 The three-dimensional wiring board according to the second aspect of the present invention is the same as the first aspect described above, wherein the second metal film is repaired in the flexure of the resin film, and the linear shape of the first metal film is generated And non-linear cracks. As a result, poor conduction does not occur in the wiring circuit, and excellent reliability can be achieved.

本發明之第三實施態樣的立體配線基板係如上面所述的第二實施態樣，其中前述第二金屬膜的厚度為前述龜裂的寬度之1/2倍以上。藉此，可以藉由第二金屬膜來確實地修復產生於第一金屬膜的龜裂。 The three-dimensional wiring board of the third embodiment of the present invention is the same as the second embodiment described above, wherein the thickness of the second metal film is more than 1/2 times the width of the crack. In this way, the second metal film can reliably repair the cracks generated in the first metal film.

本發明之第四實施態樣的立體配線基板係如上面所述的第一實施態樣至第三實施態樣中的任一態樣，其中前述第一金屬膜係具備將銅沉積成粒子狀後的膜厚，前述銅 係與使銅在平面板上沉積0.05μm以上0.50μm以下的情況同等量。藉此，就可以縮小產生於第一金屬膜的龜裂，且可以藉由第二金屬膜來確實地修復。 The three-dimensional wiring board of the fourth embodiment of the present invention is the same as any one of the first embodiment to the third embodiment described above, wherein the first metal film is provided with the deposition of copper into particles After the film thickness, the aforementioned copper It is the same amount as the case where copper is deposited on a flat plate with a thickness of 0.05 μm or more and 0.50 μm or less. In this way, the cracks generated in the first metal film can be reduced, and the second metal film can be reliably repaired.

本發明之第五實施態樣的立體配線基板係如上面所述的第四實施態樣，其中前述第一金屬膜係具備在前述樹脂膜之凹部內容置有銅粒子的結構。藉此，就可以藉由錨定效果而牢固地接合樹脂膜和第一金屬膜，且可以針對兩構件的密接獲得更高的剝離強度。 The three-dimensional wiring board of the fifth embodiment of the present invention is the same as the fourth embodiment described above, wherein the first metal film has a structure in which copper particles are placed in the recesses of the resin film. Thereby, the resin film and the first metal film can be firmly joined by the anchoring effect, and higher peel strength can be obtained for the close contact between the two members.

本發明之第六實施態樣的立體配線基板係如上面所述的第一實施態樣至第五實施態樣中的任一態樣，其中前述第一金屬膜係形成於前述樹脂膜的雙面上。藉此，與單面基板相較，配線電路的自由度較高，且亦容易實現小型化，可以謀求立體配線基板的高密度化。 The three-dimensional wiring board of the sixth embodiment of the present invention is any one of the first embodiment to the fifth embodiment described above, wherein the first metal film is formed on the double layer of the resin film. Surface. As a result, compared with a single-sided board, the degree of freedom of the wiring circuit is higher, and the size reduction is also easier, and the density of the three-dimensional wiring board can be increased.

本發明之第七實施態樣的立體配線基板的製造方法係具有：準備步驟，用以準備平坦的樹脂膜，前述樹脂膜係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；凹凸形成步驟，係對前述樹脂膜施予加熱及加壓，用以在前述樹脂膜的表面形成複數個凹凸；第一金屬膜形成步驟，用以在前述樹脂膜的表面上形成第一金屬膜；圖案形成步驟，係藉由光微影術對前述第一金屬膜施予圖案化，且形成所期望的圖案；立體成型步驟，係對形成有前述第一金屬膜之狀態的前述樹脂膜施予加熱及加壓以進行立體成型； 以及第二金屬膜形成步驟，用以在前述圖案形成後的前述第一金屬膜上形成第二金屬膜；在前述第一金屬膜形成步驟中，係將金屬沉積成粒子狀且調整膜厚，藉此將前述第一金屬膜形成為多孔狀。 The manufacturing method of the three-dimensional wiring board of the seventh embodiment of the present invention has: a preparation step for preparing a flat resin film, the resin film having a storage elastic modulus in the saturation region above the glass transition temperature of 2×10 Dynamic viscoelastic properties below 7 Pa, and with a breaking elongation of more than 50%; the unevenness forming step is to apply heat and pressure to the resin film to form a plurality of unevenness on the surface of the resin film; first The metal film forming step is to form a first metal film on the surface of the resin film; the pattern forming step is to pattern the first metal film by photolithography to form a desired pattern; The forming step is to apply heat and pressure to the resin film in the state where the first metal film is formed to perform three-dimensional molding; and the second metal film forming step is for the first metal film after the pattern is formed A second metal film is formed on the upper surface; in the first metal film forming step, the metal is deposited into particles and the film thickness is adjusted, thereby forming the first metal film into a porous shape.

在第七實施態樣中，因是使用圖案形成後的第一金屬膜來形成第二金屬膜，故而不需要用以將第一金屬膜及第二金屬膜圖案化的特殊的裝置或步驟等，且可以使用既有的配線基板製造裝置，可以用更低成本來實現更微細的配線圖案。又，因是在樹脂膜的凹凸形成面形成多孔狀之第一金屬膜，故而即便在之後的立體形成步驟中，仍可以防止在第一金屬膜產生不可修復的龜裂。更且，因是在樹脂膜的表面形成有凹凸(錨定面)，故而可以藉由錨定效果而牢固地接合樹脂膜和第一金屬膜與第二金屬膜，且可以針對兩構件的密接獲得比較高的剝離強度。然後，藉由獲得如此的剝離強度，就能防止因第二金屬膜之形成時的殘留應力所引起的微小膨脹及金屬膜的剝離，且可以改善作為立體配線基板的可靠度，更且，亦能抑制藉由立體配線基板完成後之各種步驟(阻焊劑形成、外形加工、零件安裝時的迴焊等)施加之應力而在配線圖案發生龜裂或斷線。根據以上，本發明的立體配線基板的製造方法係可以容易謀求樹脂膜與作為配線電路之材料的金屬之剝離的防止、配線電路的微細加工、以及配線電路之斷線的防止，更且，可以用低成本來製造立體配線基板。 In the seventh embodiment, since the patterned first metal film is used to form the second metal film, there is no need for special devices or steps for patterning the first metal film and the second metal film. , And can use the existing wiring board manufacturing equipment, can realize more fine wiring patterns at lower cost. In addition, since the porous first metal film is formed on the uneven surface of the resin film, it is possible to prevent irreparable cracks in the first metal film even in the subsequent three-dimensional formation step. Moreover, since the surface of the resin film is formed with unevenness (anchor surface), the resin film and the first metal film and the second metal film can be firmly joined by the anchoring effect, and the two members can be tightly bonded Obtain relatively high peel strength. Then, by obtaining such a peeling strength, it is possible to prevent minute expansion and peeling of the metal film caused by the residual stress during the formation of the second metal film, and to improve the reliability as a three-dimensional wiring board, moreover, It can suppress the occurrence of cracks or disconnection in the wiring pattern by the stress applied by the various steps after the completion of the three-dimensional wiring board (solder resist formation, contour processing, reflow during component mounting, etc.). Based on the above, the method for manufacturing a three-dimensional wiring board of the present invention can easily prevent the peeling of the resin film and the metal that is the material of the wiring circuit, the microfabrication of the wiring circuit, and the prevention of the disconnection of the wiring circuit. Low cost to manufacture three-dimensional wiring board.

本發明之第八實施態樣的立體配線基板的製造方法係如上面所述的第七實施態樣，其中在前述第二金屬膜形成步驟中，係在前述第一金屬膜產生直線狀及非直線狀之龜裂的情況下，藉由前述第二金屬膜來修復前述龜裂，前述第一金屬膜係位於藉由前述立體成型步驟中的立體成型而屈曲後的前述樹脂膜之屈曲部上。藉此，就不會在配線電路上發生導通不良，而可以製造可靠度較高的立體配線基板。 The manufacturing method of the three-dimensional wiring board of the eighth embodiment of the present invention is the same as the seventh embodiment described above, wherein in the second metal film forming step, the first metal film produces linear and non-linear patterns. In the case of linear cracks, the second metal film is used to repair the cracks, and the first metal film is located on the flexed portion of the resin film that has been bent by the three-dimensional molding in the three-dimensional molding step . Thereby, there is no conduction failure in the wiring circuit, and a three-dimensional wiring board with high reliability can be manufactured.

本發明之第九實施態樣的立體配線基板的製造方法係如上面所述的第八實施態樣，其中在前述第二金屬膜形成步驟中係將前述第二金屬膜的厚度設為前述龜裂的寬度之1/2倍以上。藉此，就可以藉由第二金屬膜來確實地修復產生於第一金屬膜的龜裂。 The manufacturing method of the three-dimensional wiring board of the ninth embodiment of the present invention is the same as the eighth embodiment described above, wherein in the second metal film forming step, the thickness of the second metal film is set to More than 1/2 times the width of the crack. In this way, the second metal film can reliably repair the cracks generated in the first metal film.

本發明之第十實施態樣的立體配線基板的製造方法係如上面所述的第七實施態樣至第九實施態樣中的任一態樣，其中前述凹凸形成步驟係具備：貼合步驟，係將粗面化後的金屬箔之粗化面一邊壓抵於前述樹脂膜一邊予以加熱，且將前述金屬箔貼合於前述樹脂膜；以及去除步驟，用以去除前述金屬箔。藉此，就可以藉由錨定效果而牢固地接合樹脂膜和第一金屬膜，且可以針對兩構件的密接獲得更高的剝離強度。 The manufacturing method of the three-dimensional wiring board of the tenth embodiment of the present invention is the same as any one of the seventh embodiment to the ninth embodiment described above, wherein the aforementioned concave-convex forming step includes: a bonding step , The roughened surface of the roughened metal foil is heated while being pressed against the resin film, and the metal foil is attached to the resin film; and a removing step is used to remove the metal foil. Thereby, the resin film and the first metal film can be firmly joined by the anchoring effect, and higher peel strength can be obtained for the close contact between the two members.

本發明之第十一實施態樣的立體配線基板的製造方法係如上面所述的第七實施態樣至第十實施態樣中的任一 態樣，其中在前述第一金屬膜形成步驟中，係將銅、銀、鎳或金、或是至少含有銅、銀、鎳或金中之任一個的合金沉積成粒子狀，前述銅、銀、鎳或金、或是至少含有銅、銀、鎳或金中之任一個的合金係與使銅、銀、鎳或金、或是至少含有銅、銀、鎳或金中之任一個的合金在平面板上沉積0.05μm以上0.50μm以下的情況同等量。藉此，可以無損樹脂與金屬之密接地縮小產生於第一金屬膜的龜裂，且可以藉由第二金屬膜來確實地修復。 The manufacturing method of the three-dimensional wiring board of the eleventh embodiment of the present invention is any one of the seventh embodiment to the tenth embodiment described above In an aspect, in the aforementioned first metal film forming step, copper, silver, nickel, or gold, or an alloy containing at least any one of copper, silver, nickel, or gold, is deposited into particles. , Nickel or gold, or an alloy system containing at least any of copper, silver, nickel or gold, and an alloy of copper, silver, nickel or gold, or at least containing any of copper, silver, nickel or gold The same amount is used when depositing 0.05 μm or more and 0.50 μm or less on a flat board. Thereby, the cracks generated in the first metal film can be reduced without damaging the tightness between the resin and the metal, and the second metal film can be used to reliably repair.

本發明之第十二實施態樣的立體配線基板的製造方法係如上面所述的第七實施態樣至第十一實施態樣中的任一態樣，其中在前述第一金屬膜形成步驟中，係藉由催化處理及無電電鍍來形成前述第一金屬膜。藉此，就不需要花費成本的前置處理或該前置處理用的製造裝置，且可以更進一步謀求立體配線基板本身的成本減低。 The manufacturing method of the three-dimensional wiring board of the twelfth embodiment of the present invention is the same as any one of the seventh embodiment to the eleventh embodiment described above, wherein in the aforementioned first metal film forming step Among them, the aforementioned first metal film is formed by catalytic treatment and electroless plating. This eliminates the need for costly pre-processing or manufacturing equipment for the pre-processing, and it is possible to further reduce the cost of the three-dimensional wiring board itself.

本發明之第十三實施態樣的立體配線基板的製造方法係如上面所述的第七實施態樣至第十二實施態樣中的任一態樣，其中在前述第一金屬膜形成步驟中，係在前述樹脂膜的雙面上形成前述第一金屬膜；在前述圖案形成步驟中，無論對形成於前述樹脂膜之雙面上的前述第一金屬膜中之任一個都施予圖案化；在前述第二金屬膜形成步驟中，無論對圖案化後的前述第一金屬膜中之任一個都形成前述第二金屬膜。藉此，就可以在立體配線基板的雙面形成配線圖案，且可以謀求立體配線基板的高密度化。 The manufacturing method of the three-dimensional wiring board of the thirteenth embodiment of the present invention is the same as any one of the seventh embodiment to the twelfth embodiment described above, wherein in the aforementioned first metal film forming step Wherein, the first metal film is formed on both sides of the resin film; in the pattern forming step, the pattern is applied to any of the first metal films formed on both sides of the resin film In the aforementioned second metal film forming step, the aforementioned second metal film is formed regardless of any of the aforementioned first metal films after patterning. Thereby, wiring patterns can be formed on both sides of the three-dimensional wiring board, and the density of the three-dimensional wiring board can be increased.

本發明之第十四實施態樣的立體配線基板用基材係具有：立體的樹脂膜，係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；以及第一金屬膜，係形成於前述樹脂膜的表面上，且具備所期望的圖案；前述樹脂膜係在前述第一金屬膜的形成面具備複數個凹凸；前述第一金屬膜係以成為將金屬沉積成粒子狀而成的多孔狀之結構的方式來調整膜厚。 The base material for a three-dimensional wiring board of the fourteenth embodiment of the present invention has: a three-dimensional resin film with dynamic viscoelastic properties such that the storage elasticity in the saturated zone above the glass transition temperature is 2×10 7 Pa or less , And have a breaking elongation of 50% or more; and the first metal film is formed on the surface of the resin film, and has a desired pattern; the resin film is provided with a plurality of on the surface of the first metal film Concavo-convex; the first metal film is to become a porous structure formed by depositing metal into particles to adjust the film thickness.

在第十四實施態樣中，因是在樹脂膜的凹凸形成面形成多孔狀之第一金屬膜，故而即便在第一金屬膜產生寬度較窄的直線狀及非直線狀之龜裂，仍能藉由追加的成膜而容易且確實地修復該龜裂，且能謀求最終的導通不良之防止。又，因是在樹脂膜的表面形成有凹凸(錨定面)，故而可以藉由錨定效果而牢固地接合樹脂膜和第一金屬膜與第二金屬膜，且可以針對兩構件的密接獲得比較高的剝離強度。然後，藉由獲得如此的剝離強度，就能防止因追加之成膜時的殘留應力所引起的微小膨脹及金屬膜的剝離，且可以改善作為最終的基板的可靠度，更且，亦能抑制藉由基板完成後之各種步驟(阻焊劑形成、外形加工、零件安裝時的迴焊等)施加之應力而在配線圖案發生龜裂或斷線。根據以上，本發明的立體配線基板用基材係可以容易謀求樹脂膜與作為配線電路之材料的金屬之剝離的防止、配線電路的微細加工、以及配線電路之斷線的防止，且具備優異的可靠度，並且可以用低成本來製造。 In the fourteenth embodiment, since the porous first metal film is formed on the uneven surface of the resin film, even if narrow linear and non-linear cracks occur in the first metal film, This crack can be repaired easily and surely by the additional film formation, and the final conduction failure can be prevented. In addition, since the surface of the resin film is formed with unevenness (anchor surface), the resin film and the first metal film and the second metal film can be firmly joined by the anchoring effect, and the adhesion of the two members can be obtained. Relatively high peel strength. Then, by obtaining such a peeling strength, it is possible to prevent micro-swelling and peeling of the metal film caused by residual stress during the additional film formation, and to improve the reliability of the final substrate, and it is also possible to suppress Cracks or disconnections occur in the wiring pattern due to the stress applied by various steps after the completion of the substrate (formation of solder resist, contour processing, reflow during component mounting, etc.). Based on the above, the base material for a three-dimensional wiring board of the present invention can easily prevent the peeling of the resin film and the metal as the material of the wiring circuit, the microfabrication of the wiring circuit, and the prevention of the disconnection of the wiring circuit, and has excellent Reliability, and can be manufactured at low cost.

本發明之第十五實施態樣的立體配線基板用基材係如上面所述的第十四實施態樣，其中前述第一金屬膜係具備將銅沉積成粒子狀後的膜厚，前述銅係與使銅在平面板上沉積0.05μm以上0.50μm以下的情況同等量。藉此，就可以謀求作為最終所製造的立體配線基板的高密度化。 The base material for a three-dimensional wiring board of the fifteenth embodiment of the present invention is the same as the fourteenth embodiment described above, wherein the first metal film has a film thickness after copper is deposited into particles, and the copper It is the same amount as the case where copper is deposited on a flat plate with a thickness of 0.05 μm or more and 0.50 μm or less. Thereby, it is possible to achieve a high density as a three-dimensional wiring board finally manufactured.

1:熱塑性樹脂膜 1: Thermoplastic resin film

4:貫通孔 4: Through hole

5:第一金屬膜 5: The first metal film

5a:粒子 5a: particles

21:第二金屬膜 21: second metal film

30:立體配線基板 30: Three-dimensional wiring board

Claims (15)

一種立體配線基板，係具有：立體的樹脂膜，係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；第一金屬膜，係形成於前述樹脂膜的表面上，且具備所期望的圖案；以及第二金屬膜，係形成於前述第一金屬膜上；前述樹脂膜係在前述第一金屬膜的形成面具備複數個凹凸；前述第一金屬膜係以成為將金屬沉積成粒子狀而成的多孔狀之結構的方式來調整膜厚。 A three-dimensional wiring board with: a three-dimensional resin film, which has dynamic viscoelastic properties with a storage elasticity of 2×10 7 Pa or less in the saturation zone above the glass transition temperature, and has a breaking elongation of more than 50%; The first metal film is formed on the surface of the resin film and has a desired pattern; and the second metal film is formed on the first metal film; the resin film is formed on the first metal film The surface is provided with a plurality of irregularities; the first metal film described above has a film thickness adjusted so as to have a porous structure formed by depositing metal into particles. 如請求項1所記載之立體配線基板，其中前述第二金屬膜係修復在前述樹脂膜的屈曲部中產生於前述第一金屬膜的直線狀及非直線狀之龜裂。 The three-dimensional wiring board according to claim 1, wherein the second metal film repairs linear and non-linear cracks generated in the first metal film in the flexure of the resin film. 如請求項2所記載之立體配線基板，其中前述第二金屬膜的厚度為前述龜裂的寬度之1/2倍以上。 The three-dimensional wiring board according to claim 2, wherein the thickness of the second metal film is more than 1/2 times the width of the crack. 如請求項1所記載之立體配線基板，其中前述第一金屬膜係具備將銅沉積成粒子狀後的膜厚，前述銅係與使銅在平面板上沉積0.05μm以上0.50μm以下的情況同等量。 The three-dimensional wiring board according to claim 1, wherein the first metal film system has a film thickness after copper is deposited into particles, and the copper system is equivalent to the case where copper is deposited on a flat board by 0.05 μm or more and 0.50 μm or less the amount. 如請求項4所記載之立體配線基板，其中前述第一金屬膜係具備在前述樹脂膜之凹部內容置有銅粒子的結構。 The three-dimensional wiring board according to claim 4, wherein the first metal film has a structure in which copper particles are placed in a recess of the resin film. 如請求項1所記載之立體配線基板，其中前述第一金屬膜係形成於前述樹脂膜的雙面上。 The three-dimensional wiring board according to claim 1, wherein the first metal film is formed on both sides of the resin film. 一種立體配線基板的製造方法，係具有：準備步驟，用以準備平坦的樹脂膜，前述樹脂膜係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；凹凸形成步驟，係對前述樹脂膜施予加熱及加壓，用以在前述樹脂膜的表面形成複數個凹凸；第一金屬膜形成步驟，用以在前述樹脂膜的表面上形成第一金屬膜；圖案形成步驟，係藉由光微影術對前述第一金屬膜施予圖案化，且形成所期望的圖案；立體成型步驟，係對形成有前述第一金屬膜之狀態的前述樹脂膜施予加熱及加壓以進行立體成型；以及第二金屬膜形成步驟，用以在前述圖案形成後的前述第一金屬膜上形成第二金屬膜； 在前述第一金屬膜形成步驟中，係將金屬沉積成粒子狀且調整膜厚，藉此將前述第一金屬膜形成為多孔狀。 A method for manufacturing a three-dimensional wiring board has: a preparation step for preparing a flat resin film, the resin film having a dynamic viscoelasticity with a storage elasticity of 2×10 7 Pa or less in the saturated zone above the glass transition temperature It has characteristics and has a breaking elongation of more than 50%; the unevenness forming step is to apply heat and pressure to the resin film to form a plurality of unevenness on the surface of the resin film; the first metal film forming step is for A first metal film is formed on the surface of the resin film; the pattern forming step is to pattern the first metal film by photolithography and form the desired pattern; the three-dimensional forming step is to form the Applying heat and pressure to the resin film in the state of the first metal film for three-dimensional molding; and a second metal film forming step for forming a second metal film on the first metal film after the pattern is formed; In the step of forming the first metal film, the metal is deposited in a particle shape and the film thickness is adjusted, thereby forming the first metal film into a porous shape. 如請求項7所記載之立體配線基板的製造方法，其中前述第二金屬膜形成步驟係在前述第一金屬膜產生直線狀及非直線狀之龜裂的情況下，藉由前述第二金屬膜來修復前述龜裂，前述第一金屬膜係位於藉由前述立體成型步驟中的立體成型而屈曲後的前述樹脂膜之屈曲部上。 The method for manufacturing a three-dimensional wiring board according to claim 7, wherein the second metal film forming step is performed by the second metal film when the first metal film produces linear and non-linear cracks To repair the cracks, the first metal film is located on the flexed portion of the resin film that has been bent by the three-dimensional molding in the three-dimensional molding step. 如請求項8所記載之立體配線基板的製造方法，其中在前述第二金屬膜形成步驟中，係將前述第二金屬膜的厚度設為前述龜裂的寬度之1/2倍以上。 The method for manufacturing a three-dimensional wiring board according to claim 8, wherein in the second metal film forming step, the thickness of the second metal film is set to 1/2 times or more of the width of the crack. 如請求項7所記載之立體配線基板的製造方法，其中前述凹凸形成步驟係具備：貼合步驟，係將粗面化後的金屬箔之粗化面一邊壓抵於前述樹脂膜一邊予以加熱，且將前述金屬箔貼合於前述樹脂膜；以及去除步驟，用以去除前述金屬箔。 The method for manufacturing a three-dimensional wiring board according to claim 7, wherein the unevenness forming step includes a bonding step in which the roughened surface of the roughened metal foil is heated while being pressed against the resin film, And bonding the metal foil to the resin film; and a removing step for removing the metal foil. 如請求項7所記載之立體配線基板的製造方法，其中在前述第一金屬膜形成步驟中，係將銅、銀、鎳或金、或是至少含有銅、銀、鎳或金中之任一個的合金沉積成粒子狀，前述銅、銀、鎳或金、或是至少含有銅、銀、鎳或金中之任一個的合金係與使銅、銀、鎳或金、或是至少含有銅、銀、鎳或金中之任一個的合金在平 面板上沉積0.05μm以上0.50μm以下的情況同等量。 The method for manufacturing a three-dimensional wiring board according to claim 7, wherein in the first metal film forming step, copper, silver, nickel or gold, or at least any one of copper, silver, nickel or gold The alloy is deposited into particles, the aforementioned copper, silver, nickel or gold, or an alloy system containing at least any one of copper, silver, nickel or gold, and copper, silver, nickel or gold, or at least copper, Any alloy of silver, nickel or gold The same amount is applied when depositing 0.05μm or more and 0.50μm or less on the panel. 如請求項7所記載之立體配線基板的製造方法，其中在前述第一金屬膜形成步驟中，係藉由催化處理及無電電鍍來形成前述第一金屬膜。 The method for manufacturing a three-dimensional wiring board according to claim 7, wherein in the first metal film forming step, the first metal film is formed by catalytic treatment and electroless plating. 如請求項7所記載之立體配線基板的製造方法，其中在前述第一金屬膜形成步驟中，係在前述樹脂膜的雙面上形成前述第一金屬膜；在前述圖案形成步驟中，無論對形成於前述樹脂膜之雙面上的前述第一金屬膜中之任一個都施予圖案化；在前述第二金屬膜形成步驟中，無論對圖案化後的前述第一金屬膜中之任一個都形成前述第二金屬膜。 The method for manufacturing a three-dimensional wiring board according to claim 7, wherein in the first metal film forming step, the first metal film is formed on both sides of the resin film; in the pattern forming step, no matter what Any one of the first metal films formed on both sides of the resin film is patterned; in the step of forming the second metal film, regardless of the patterned first metal film Both form the aforementioned second metal film. 一種立體配線基板用基材，係具有：立體的樹脂膜，係具備玻璃轉移溫度以上之飽和區中的貯藏彈性率為2×107Pa以下的動態黏彈性特性，且具備50%以上的斷裂伸度；以及第一金屬膜，係形成於前述樹脂膜的表面上，且具備所期望的圖案；前述樹脂膜係在前述第一金屬膜的形成面具備複數個凹凸； 前述第一金屬膜係以成為將金屬沉積成粒子狀而成的多孔狀之結構的方式來調整膜厚。 A substrate for a three-dimensional wiring board, which has: a three-dimensional resin film, which has dynamic viscoelastic properties with a storage elasticity of 2×10 7 Pa or less in the saturated zone above the glass transition temperature, and has a fracture of more than 50% Elongation; and the first metal film is formed on the surface of the resin film and has a desired pattern; the resin film is provided with a plurality of concavities and convexities on the formation surface of the first metal film; the first metal film The film thickness is adjusted so as to have a porous structure formed by depositing metal into particles. 如請求項14所記載之立體配線基板用基材，其中前述第一金屬膜係具備將銅沉積成粒子狀後的膜厚，前述銅係與使銅在平面板上沉積0.05μm以上0.50μm以下的情況同等量。 The base material for a three-dimensional wiring board according to claim 14, wherein the first metal film has a film thickness after copper is deposited into particles, and the copper is deposited on a flat board by 0.05 μm or more and 0.50 μm or less Of the same amount.
TW106108954A 2016-07-07 2017-03-17 Three-dimensional wiring board, method for manufacturing three-dimensional wiring board, and base material for three-dimensional wiring board TWI713418B (en)

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JPWO2018008125A1 (en) 2018-07-12
CN109315069A (en) 2019-02-05

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