TWI709207B - Use of indium bismuth alloy in heat dissipation - Google Patents
Use of indium bismuth alloy in heat dissipation Download PDFInfo
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- TWI709207B TWI709207B TW108147679A TW108147679A TWI709207B TW I709207 B TWI709207 B TW I709207B TW 108147679 A TW108147679 A TW 108147679A TW 108147679 A TW108147679 A TW 108147679A TW I709207 B TWI709207 B TW I709207B
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本發明係關於一種金屬在散熱方面的用途，特別是指一種銦鉍合金在散熱方面的用途。 The present invention relates to the use of a metal in heat dissipation, in particular to the use of an indium-bismuth alloy in heat dissipation.
電子產品中的發熱性元件，在使用的過程中會不斷地產生熱能，累積的熱能可能導致發熱性元件的效能下降。一般發熱性元件會搭配散熱元件進行散熱，散熱元件常見有金屬板及散熱鰭片，並逐漸因應電子產品的輕薄要求，而發展出薄型散熱片。然而，薄型散熱件受限於加工程序，平整度遠不如塊材，薄型散熱件及發熱性元件的介面之間容易有大量空隙，且這些空隙中有熱傳導係數僅為0.024W/mK的空氣，容易形成熱淤積，造成嚴重的熱阻。 Heat generating components in electronic products will continuously generate heat energy during use, and the accumulated heat energy may cause the performance of the heat generating components to decrease. Generally, heat-generating components are matched with heat-dissipating components to dissipate heat. Heat-dissipating components usually include metal plates and fins, and thin heat sinks are gradually developed to meet the requirements of light and thin electronic products. However, thin heat sinks are limited by processing procedures, and their flatness is far less than that of bulk materials. There are a lot of gaps between the interfaces of thin heat sinks and heat generating components, and there is air with a thermal conductivity of only 0.024W/mK in these gaps. It is easy to form thermal sludge, causing serious thermal resistance.
為了填補薄型散熱件及發熱性元件之間的那些空隙，業界廣泛使用熱傳導係數約2~5W/mK的散熱膏，然而，請搭配第七圖，在將散熱膏(1')塗抹在發熱性元件(2')上時，散熱膏(1')中容易產生大量氣泡(A')，這些氣泡(A')中的空氣會大幅降低發熱性元件(2')的散熱效果。 In order to fill the gaps between thin heat sinks and heat-generating components, the industry widely uses thermal paste with a thermal conductivity of about 2~5W/mK. However, please match the seventh figure and apply the thermal paste (1') to the heat-generating When the element (2') is mounted, a large number of bubbles (A') are easily generated in the heat dissipation paste (1'), and the air in these bubbles (A') will greatly reduce the heat dissipation effect of the heat generating element (2').
爰此，本發明人為使散熱效果更好，而提出一種銦鉍合金於散熱的用途，包含：在一熱源及相鄰之一散熱端之間固定一銦鉍合金；該銦鉍合金受熱熔化為液相；以及液相之該銦鉍合金流動填充該熱源及該散熱端之間的一間隙，使液相之該銦鉍合金形成一液相導熱通道。 In view of this, in order to make the heat dissipation effect better, the inventor proposed an indium-bismuth alloy for heat dissipation, including: fixing an indium-bismuth alloy between a heat source and an adjacent heat sink; the indium-bismuth alloy is heated and melted into Liquid phase; and the indium-bismuth alloy in the liquid phase flows to fill a gap between the heat source and the heat dissipation end, so that the indium-bismuth alloy in the liquid phase forms a liquid-phase heat conduction channel.
進一步，該散熱端為一散熱固定件，該散熱固定件將該銦鉍合金固定於該熱源。 Further, the heat dissipation end is a heat dissipation fixing member, and the heat dissipation fixing member fixes the indium-bismuth alloy to the heat source.
其中，該熱源停止發熱後，液相之該銦鉍合金降溫而固化為該熱源及該散熱端之間的一固態夾層，液相之該銦鉍合金降溫後，該固態夾層仍附著於該熱源及該散熱端，且該固態夾層的基地相為BiIn2相或BiIn相。 Wherein, after the heat source stops heating, the indium-bismuth alloy in the liquid phase is cooled down and solidified into a solid interlayer between the heat source and the heat sink. After the indium-bismuth alloy in the liquid phase is cooled down, the solid interlayer is still attached to the heat source And the heat dissipation end, and the base phase of the solid interlayer is BiIn 2 phase or BiIn phase.
其中，該固態夾層的固液相變體積膨脹量介於0.01cm3/cm3至0.025cm3/cm3。 Wherein, the solid-liquid phase change solid interlayer is between the amount of volume expansion of 0.01cm 3 / cm 3 to 0.025cm 3 / cm 3.
其中，該銦鉍合金的厚度介於0.02至0.1毫米，該銦鉍合金的熔點介於攝氏60度至80度。 The thickness of the indium-bismuth alloy ranges from 0.02 to 0.1 mm, and the melting point of the indium-bismuth alloy ranges from 60°C to 80°C.
進一步，去除從該間隙流出的一溢料。 Further, a flash of material flowing out from the gap is removed.
進一步，該間隙邊緣設置一防溢件，防止該溢料溢出。 Furthermore, an anti-overflow member is arranged on the edge of the gap to prevent the overflow of the material.
其中，該銦鉍合金的尺寸不大於該熱源及該散熱端。 Wherein, the size of the indium-bismuth alloy is not larger than the heat source and the heat dissipation end.
進一步，該銦鉍合金固定在該熱源及該散熱端之前，除去該銦鉍合金上的油脂。 Further, before the indium-bismuth alloy is fixed on the heat source and the heat sink, the grease on the indium-bismuth alloy is removed.
進一步，該銦鉍合金含有小於40wt%的錫。 Further, the indium-bismuth alloy contains less than 40wt% tin.
根據上述技術特徵可達成以下功效： According to the above technical features, the following effects can be achieved:
1.銦鉍合金先緻密化後再接觸熱源，減少孔隙率，有效提高散熱效果。 1. The indium-bismuth alloy is densified before contacting the heat source to reduce porosity and effectively improve the heat dissipation effect.
2.散熱固定件固定銦鉍合金，當銦鉍合金相變化為液態時，也不會從熱源上溢出。 2. The heat dissipation fixture fixes the indium-bismuth alloy, and when the phase of the indium-bismuth alloy changes to liquid, it will not overflow from the heat source.
3.散熱固定件是高熱傳導係數的材質，熱能可以從熱源通過銦鉍合金傳導至散熱固定件散熱。 3. The heat dissipation fixture is a material with high thermal conductivity, and heat energy can be conducted from the heat source through the indium-bismuth alloy to the heat dissipation fixture for heat dissipation.
4.銦鉍合金的厚度薄至0.02毫米，不會影響熱源及散熱固定件的安裝。 4. The thickness of the indium-bismuth alloy is as thin as 0.02 mm, which will not affect the installation of the heat source and heat dissipation fixture.
5.液相之銦鉍合金黏度只有習用散熱膏的萬分之一，更容易完整填充間隙，且氣泡更容易排出，進而增加熱傳效果。 5. The viscosity of the indium-bismuth alloy in the liquid phase is only one ten thousandth of that of the conventional heat-dissipating paste, it is easier to completely fill the gap, and the bubbles are easier to discharge, thereby increasing the heat transfer effect.
6.液相之銦鉍合金降溫後，固態夾層仍會附著於熱源及散熱端，確保不會有空氣進入熱源及散熱端之間，也無需擔心下次銦鉍合金形成液相導熱通道後會有氣泡。 6. After the liquid phase indium-bismuth alloy cools down, the solid interlayer will still be attached to the heat source and the heat dissipation end, ensuring that no air enters between the heat source and the heat dissipation end, and there is no need to worry about the next time the indium-bismuth alloy forms a liquid-phase heat conduction channel. There are bubbles.
7.固態夾層的固液相變體積膨脹量適中，利於使固態夾層維持附著在熱源及散熱端。 7. The volume expansion of the solid-liquid phase change of the solid interlayer is moderate, which is beneficial to keep the solid interlayer attached to the heat source and heat dissipation end.
8.固態夾層冷卻後仍會附著於熱源及散熱端，且固態夾層的基地相為BiIn2相或BiIn相，即使是在固態，銦鉍合金仍具有理論值超過28W/m℃的熱傳導係數，是習用散熱膏的5倍以上。 8. After cooling, the solid interlayer will still adhere to the heat source and the heat sink, and the base phase of the solid interlayer is BiIn 2 phase or BiIn phase. Even in the solid state, the indium-bismuth alloy still has a thermal conductivity coefficient exceeding 28W/m℃. It is more than 5 times of conventional thermal paste.
(1):熱源 (1): Heat source
(2):銦鉍合金 (2): Indium-bismuth alloy
(20):液相導熱通道 (20): Liquid phase heat conduction channel
(3):散熱固定件 (3): Heat dissipation fixture
(30):間隙 (30): Gap
(A):蓋板 (A): Cover
(B):載板 (B): Carrier board
(C):重物 (C): Heavy objects
(D):平面熱源 (D): Plane heat source
(E):孔隙 (E): Porosity
(1'):散熱膏 (1'): Thermal paste
(2'):發熱性元件 (2'): Heating element
(A'):氣泡 (A'): Bubble
[第一圖]係本發明實施例之立體分解圖。 [The first figure] is an exploded perspective view of an embodiment of the present invention.
[第二圖]係本發明實施例之側視圖。 [The second figure] is a side view of the embodiment of the present invention.
[第三圖]係本發明實施例之流程圖。 [Third Figure] is a flowchart of an embodiment of the present invention.
[第四圖]係本發明實施例之實施示意圖一，示意銦鉍合金的緻密化過程。 [Fourth figure] is the first schematic diagram of the embodiment of the present invention, showing the densification process of indium-bismuth alloy.
[第五圖]係本發明實施例之實施示意圖二，示意銦鉍合金相變化為液態。 [Fifth Figure] is the second schematic diagram of the embodiment of the present invention, showing the phase change of the indium-bismuth alloy into liquid.
[第六圖]係本發明實施例第五圖之部分放大圖，示意銦鉍合金的熱傳導。 [Figure 6] is a partially enlarged view of Figure 5 of the embodiment of the present invention, showing the heat conduction of the indium-bismuth alloy.
[第七圖]係習知技術使用散熱膏之實施示意圖。 [Figure 7] is a schematic diagram of the implementation of the conventional technology using thermal paste.
[第八圖]係本發明實施例之微結構組織照片一。
[Eighth Figure] is a
[第九圖]係本發明實施例之微結構組織照片二。 [Figure 9] is the second photo of the microstructure organization of the embodiment of the present invention.
[第十圖]係本發明實施例之微結構組織照片三。 [Figure 10] is the third photo of the microstructure organization of the embodiment of the present invention.
綜合上述技術特徵，本發明銦鉍合金於散熱的用途的主要功效將可於下述實施例清楚呈現。 Based on the above technical features, the main effects of the indium-bismuth alloy of the present invention for heat dissipation will be clearly presented in the following embodiments.
請先參閱第一圖至第三圖，係揭示本發明實施例銦鉍合金於散熱的用途，包含： Please refer to Figures 1 to 3, which illustrate the use of indium-bismuth alloys for heat dissipation according to embodiments of the present invention, including:
於一熱源(1)及相鄰之一散熱端之間放置緻密化後的固態之一銦鉍合金(2)，且該銦鉍合金(2)固定在該熱源(1)及該散熱端間之前，先除去該銦鉍合金(2)上的油脂。該散熱端在本發明之實施方式中為一散熱固定件(3)，並以該散熱固定件(3)將該銦鉍合金(2)固定接觸該熱源(1)，該銦鉍合金(2)的面積不大於該熱源(1)及該散熱固定件(3)的面積。 A densified solid indium-bismuth alloy (2) is placed between a heat source (1) and an adjacent heat sink, and the indium-bismuth alloy (2) is fixed between the heat source (1) and the heat sink Before, the grease on the indium-bismuth alloy (2) was removed. In the embodiment of the present invention, the heat dissipation end is a heat dissipation fixture (3), and the indium bismuth alloy (2) is fixedly contacted with the heat source (1) by the heat dissipation fixture (3), and the indium bismuth alloy (2) The area of) is not greater than the area of the heat source (1) and the heat dissipation fixture (3).
該熱源(1)可以是中央處理器、圖形處理器或LED元件等在運行時會發熱的元件。該散熱固定件(3)為高熱傳導係數的材質，例如該散熱固定件(3)可以是散熱風扇，該散熱固定件(3)的熱傳導係數不低於該銦鉍合金(2)。 The heat source (1) can be a central processing unit, a graphics processor, or an LED component that generates heat during operation. The heat dissipation fixture (3) is made of a material with high thermal conductivity. For example, the heat dissipation fixture (3) can be a heat dissipation fan, and the heat conduction coefficient of the heat dissipation fixture (3) is not lower than the indium-bismuth alloy (2).
請參閱第四圖，並請搭配第二圖，該銦鉍合金(2)的緻密化方式是：將67wt%的銦及33wt%的鉍混合加熱而共晶成為熱傳導係數約54W/mK的該銦鉍合金(2)，該銦鉍合金(2)上下分別以一蓋板(A)及一載板(B)夾住，使該銦鉍合金(2)除了被該蓋板(A)覆蓋的一覆蓋區，尚留有未被該蓋板(A)完全覆蓋的一未覆蓋區。該蓋板(A)上方再置放有一重物(C)，該載板(B)下方則貼平有一平 面熱源(D)。使用該平面熱源(D)對該銦鉍合金(2)加熱，該銦鉍合金(2)受熱熔融，該覆蓋區中液相之該銦鉍合金(2)受到該重物(C)、該蓋板(A)及該載板(B)的壓力擠壓，會往該未覆蓋區流動，同時液相之該銦鉍合金(2)中大部分的氣泡也會一併被帶至該未覆蓋區排出，由於液相之該銦鉍合金(2)的黏度僅有2~100cp，氣泡更容易被帶至該未覆蓋區排出，可以使液相之該銦鉍合金(2)的孔隙率低於15%，意即，每單位體積之液相之該銦鉍合金(2)中，不會有超過15%體積的一孔隙(E)。藉由這種方式，還可以減少液相之該銦鉍合金(2)抵擋薄化的表面張力，使固化後的該銦鉍合金(2)的厚度介於0.02至0.1毫米，薄化至0.02毫米的該銦鉍合金(2)不會影響該熱源(1)及該散熱固定件(3)的安裝。 Please refer to the fourth figure, and please match the second figure. The densification method of the indium-bismuth alloy (2) is to mix and heat 67wt% indium and 33wt% bismuth to form a eutectic with a thermal conductivity of about 54W/mK. Indium-bismuth alloy (2), the indium-bismuth alloy (2) is clamped up and down by a cover plate (A) and a carrier plate (B), so that the indium-bismuth alloy (2) is not covered by the cover plate (A) There is still an uncovered area that is not completely covered by the cover plate (A). A weight (C) is placed on the top of the cover (A), and a level is placed on the bottom of the carrier (B). Surface heat source (D). Use the plane heat source (D) to heat the indium-bismuth alloy (2), the indium-bismuth alloy (2) is heated and melted, and the indium-bismuth alloy (2) in the liquid phase in the coverage area is subjected to the weight (C), the The pressure of the cover plate (A) and the carrier plate (B) will flow to the uncovered area, and at the same time most of the bubbles in the indium-bismuth alloy (2) in the liquid phase will be brought to the uncovered area. The covered area is discharged. Since the viscosity of the indium-bismuth alloy (2) in the liquid phase is only 2-100 cp, the bubbles are more likely to be brought to the uncovered area and discharged, which can make the porosity of the indium-bismuth alloy (2) in the liquid phase Less than 15% means that there will not be a void (E) exceeding 15% by volume in the indium-bismuth alloy (2) per unit volume of liquid phase. In this way, the surface tension of the indium-bismuth alloy (2) in the liquid phase against thinning can also be reduced, so that the thickness of the solidified indium-bismuth alloy (2) is between 0.02 and 0.1 mm, which is thinned to 0.02 The millimeter of the indium-bismuth alloy (2) does not affect the installation of the heat source (1) and the heat dissipation fixing member (3).
請參閱第三圖、第五圖及第六圖，當該熱源(1)以攝氏20度至150度之一發熱溫度發熱時，由於該銦鉍合金(2)的熔點介於攝氏60度至80度，一旦該發熱溫度高於該銦鉍合金(2)的熔點時，該銦鉍合金(2)相變化為液態。當該銦鉍合金(2)要相變化時，該銦鉍合金(2)會自該熱源(1)吸收熱能做為潛熱而熔化為液相，使該熱源(1)降溫。同時變為液相之該銦鉍合金(2)流動填充該散熱固定件(3)及該熱源(1)之間的一間隙(30)，例如該散熱固定件(3)為散熱風扇，液相之該銦鉍合金(2)主要可以填滿散熱風扇之鰭片與該熱源(1)之間的該間隙(30)，甚至填入鰭片與鰭片之間的該間隙(30)，增加液相之該銦鉍合金(2)與該散熱固定件(3)的接觸面積，使該間隙(30)形成一液相導熱通道(20)，液相之該銦鉍合金(2)可以繼續自該熱源(1)吸收熱能，藉由該液相導熱通道(20)將熱能傳導至該散熱固定件(3)而散熱，進一步增加散熱效率，使該熱源(1)更快速的降溫。液相之該銦鉍合金(2)的黏度僅有2~100cp，低黏度更容易完整填充該間隙(30)，即使該散熱固定件(3)接觸該銦鉍合金(2)時不慎帶入空氣，而空氣被液相之該銦鉍合金 (2)包覆為氣泡後，氣泡也容易在液相之該銦鉍合金(2)中移動而被排出至該間隙(30)外，進而增進熱傳效果。由於該銦鉍合金(2)之面積小於該熱源(1)，且該銦鉍合金(2)熱傳導係數高達54W/mK，可以迅速將熱能傳遞至該散熱固定件(3)而降溫凝固，又有該散熱固定件(3)固定，液相之該銦鉍合金(2)不會從該熱源(1)上溢出。液相之該銦鉍合金(2)藉由緻密化減少孔隙率，雖然仍可能有15%以下的該孔隙(E)存在於液相之該銦鉍合金(2)中，但少量的該孔隙(E)不會影響液相之該銦鉍合金(2)的熱能傳導，熱能可以如第六圖中的箭頭方向所示，順著該孔隙(E)的邊緣以及該液相導熱通道(20)傳導至該散熱固定件(3)散熱，如此一來，液相之該銦鉍合金(2)可以有效提高該熱源(1)的散熱效果。 Please refer to the third, fifth and sixth diagrams. When the heat source (1) generates heat at a heating temperature of 20°C to 150°C, the melting point of the indium-bismuth alloy (2) is between 60°C and 60°C. At 80 degrees, once the heating temperature is higher than the melting point of the indium-bismuth alloy (2), the indium-bismuth alloy (2) changes into a liquid state. When the indium-bismuth alloy (2) undergoes a phase change, the indium-bismuth alloy (2) absorbs heat energy from the heat source (1) as latent heat and melts into a liquid phase, thereby cooling the heat source (1). At the same time, the indium-bismuth alloy (2) that becomes the liquid phase flows to fill a gap (30) between the heat dissipation fixture (3) and the heat source (1). For example, the heat dissipation fixture (3) is a heat dissipation fan, and the liquid In contrast, the indium-bismuth alloy (2) can mainly fill the gap (30) between the fin of the cooling fan and the heat source (1), or even fill the gap (30) between the fin and the fin, Increase the contact area between the indium-bismuth alloy (2) and the heat dissipation fixture (3) in the liquid phase, so that the gap (30) forms a liquid-phase heat conduction channel (20), and the indium-bismuth alloy (2) in the liquid phase can Continue to absorb heat energy from the heat source (1), conduct heat energy to the heat dissipation fixing member (3) through the liquid phase heat conduction channel (20) to dissipate heat, further increase the heat dissipation efficiency, and make the heat source (1) cool down more quickly. The viscosity of the indium-bismuth alloy (2) in the liquid phase is only 2~100cp, and the low viscosity makes it easier to completely fill the gap (30), even if the heat dissipation fixture (3) is accidentally brought into contact with the indium-bismuth alloy (2) Into the air, and the air is liquid phase of the indium-bismuth alloy (2) After being coated with bubbles, the bubbles will easily move in the indium-bismuth alloy (2) in the liquid phase and be discharged out of the gap (30), thereby enhancing the heat transfer effect. Since the area of the indium-bismuth alloy (2) is smaller than that of the heat source (1), and the thermal conductivity of the indium-bismuth alloy (2) is as high as 54W/mK, the heat energy can be quickly transferred to the heat dissipation fixture (3) for cooling and solidification, and With the heat dissipation fixing member (3) fixed, the indium-bismuth alloy (2) in the liquid phase will not overflow from the heat source (1). The indium-bismuth alloy (2) in the liquid phase reduces the porosity by densification, although there may still be less than 15% of the pores (E) in the indium-bismuth alloy (2) in the liquid phase, but a small amount of the pores (E) It will not affect the heat conduction of the indium-bismuth alloy (2) in the liquid phase. The heat energy can follow the edge of the pore (E) and the liquid-phase heat conduction channel (20 ) Is conducted to the heat dissipation fixing member (3) to dissipate heat. In this way, the indium-bismuth alloy (2) in the liquid phase can effectively improve the heat dissipation effect of the heat source (1).
當液相之該銦鉍合金(2)量較多時，可能會有一溢料從該間隙(30)流出，除了可以直接將該溢料除去，也可以在該間隙(30)邊緣設置一防溢件，例如塗覆矽膠或圍圈套件等等，防止該溢料再流出，惟此情景未於圖式中繪出。 When the amount of the indium-bismuth alloy (2) in the liquid phase is large, there may be a flash flowing out of the gap (30). In addition to removing the flash directly, it is also possible to install a guard on the edge of the gap (30). Overflow parts, such as coated silicone or enclosure kits, etc., prevent the overflow from flowing out, but this scenario is not shown in the diagram.
請參閱第六圖及第七圖，該熱源(1)停止發熱，或該發熱溫度降至該銦鉍合金(2)之熔點以下後，液相之該銦鉍合金(2)即固化為該熱源(1)及該散熱固定件(3)之間的一固態夾層，該固態夾層具有0.0181cm3/cm3的固液相變體積膨脹量，且該固態夾層仍附著於該熱源(1)及該散熱固定件(3)。該固態夾層的固液相變體積膨脹量介於0.01cm3/cm3至0.025cm3/cm3之間，液相之該銦鉍合金(2)降溫後，藉由適中的固液相變體積膨脹量，該固態夾層可以維持附著在該熱源(1)及該散熱固定件(3)上。該固態夾層並於下次該熱源(1)之該發熱溫度升至該銦鉍合金(2)之熔點以上後，再次進行相變化而自該熱源(1)吸熱使該熱源(1)降溫，並形成該液相導熱通道(20)。藉由該銦鉍合金(2)的相變化，該銦鉍合金(2)可以重複使用在散熱的用途上。由於該固態夾層維持附著在該熱源(1)及該散 熱固定件(3)上，可以確保維持該固態夾層的附著強度，若是該固態夾層未維持附著在該熱源(1)及該散熱固定件(3)上，而與該熱源(1)及該散熱固定件(3)分離，會使導熱率僅有0.024W/mK的空氣導入至該間隙(30)中，下次該熱源(1)發熱時，這些空氣將隔絕該固態夾層的熱能傳遞，即使該固態夾層重新熔融為液相之該銦鉍合金(2)而形成該液相導熱通道(20)，這些空氣仍然可能會形成大量的該孔隙(E)，阻擋該液相導熱通道(20)的熱能傳遞，並使該固態夾層更不容易附著在該熱源(1)及該散熱固定件(3)上，進而導入更多空氣，如此惡性循環，將導致該熱源(1)因無法良好散熱而過熱毀損。除此之外，且該固態夾層的基地相為BiIn2相或BiIn相，即使是在固態，該銦鉍合金(2)仍具有理論值超過28W/m℃的熱傳導係數，是習用散熱膏(1')的5倍以上。 Please refer to Figures 6 and 7. After the heat source (1) stops heating or the heating temperature drops below the melting point of the indium-bismuth alloy (2), the indium-bismuth alloy (2) in the liquid phase solidifies into the A solid interlayer between the heat source (1) and the heat dissipation fixing member (3), the solid interlayer has a volumetric expansion of 0.0181cm 3 /cm 3 between solid and liquid phases, and the solid interlayer is still attached to the heat source (1) And the heat dissipation fixing member (3). The solid-liquid phase change solid interlayer is between the amount of expansion volume of 0.01cm 3 / cm 3 to 0.025cm 3 / cm 3 between, the liquid phase of the indium-bismuth alloy (2) cooling, solid-liquid phase change by moderate By volume expansion, the solid interlayer can be maintained attached to the heat source (1) and the heat dissipation fixing member (3). After the solid interlayer next time the heating temperature of the heat source (1) rises above the melting point of the indium-bismuth alloy (2), the phase change is performed again to absorb heat from the heat source (1) to cool the heat source (1), And the liquid phase heat conduction channel (20) is formed. With the phase change of the indium-bismuth alloy (2), the indium-bismuth alloy (2) can be reused for heat dissipation purposes. Since the solid interlayer remains attached to the heat source (1) and the heat dissipation fixing member (3), the adhesion strength of the solid interlayer can be maintained. If the solid interlayer is not maintained attached to the heat source (1) and the heat dissipation fixing member (3), and the separation from the heat source (1) and the heat dissipation fixture (3) will cause air with a thermal conductivity of only 0.024W/mK to be introduced into the gap (30). Next time the heat source (1) When heating, the air will isolate the thermal energy transfer of the solid interlayer. Even if the solid interlayer is re-melted into the liquid phase of the indium-bismuth alloy (2) to form the liquid phase heat conduction channel (20), the air may still form a large amount of The aperture (E) blocks the heat transfer of the liquid-phase heat conduction channel (20), and makes the solid interlayer less likely to be attached to the heat source (1) and the heat dissipation fixture (3), thereby introducing more air, Such a vicious circle will cause the heat source (1) to be overheated and damaged due to inability to dissipate heat well. In addition, and the base phase of the solid interlayer is BiIn 2 phase or BiIn phase, even in the solid state, the indium-bismuth alloy (2) still has a thermal conductivity coefficient of more than 28W/m℃, which is a conventional heat dissipation paste ( 1') more than 5 times.
該銦鉍合金(2)可以進一步含有小於40wt%的錫，例如：以51wt%的銦、32.5wt%的鉍及16.5wt%的錫共晶形成該銦鉍合金(2)，或是以25wt%的銦、57wt%的鉍及18wt%的錫共晶形成該銦鉍合金(2)，同樣都可以應用在散熱上。當該銦鉍合金(2)是以51wt%的銦、32.5wt%的鉍及16.5wt%的錫共晶形成時，該固態夾層的固液相變體積膨脹量為0.0201cm3/cm3；當該銦鉍合金(2)是以25wt%的銦、57wt%的鉍及18wt%的錫共晶形成時，該固態夾層的固液相變體積膨脹量為0.0131cm3/cm3。 The indium-bismuth alloy (2) may further contain less than 40wt% tin, for example: 51wt% of indium, 32.5wt% of bismuth and 16.5wt% of tin are used to form the indium-bismuth alloy (2), or 25wt% of tin % Indium, 57wt% bismuth and 18wt% tin eutectic form the indium-bismuth alloy (2), which can also be used for heat dissipation. When the indium bismuth alloy (2) is 51wt% indium, 32.5wt% 16.5wt% bismuth and tin eutectic, the solid-liquid phase change solid interlayer amount of volume expansion 0.0201cm 3 / cm 3; when the indium bismuth alloy (2) is indium 25wt%, 57wt% and 18wt% of the bismuth-tin eutectic, the solid-liquid phase change solid interlayer amount of volume expansion 0.0131cm 3 / cm 3.
請參閱第八圖至第十圖，並請搭配第一圖，第八圖至第十圖係不同成分比例下之該銦鉍合金(2)由掃描式顯微鏡觀察的微結構組織照片。第八圖是以51wt%的銦、32.5wt%的鉍及16.5wt%的錫共晶形成的該銦鉍合金(2)，熔點在60℃，此時該銦鉍合金(2)的原子百分比為銦：鉍：錫=60.1：21.1：18.8，而將第八圖以能量色散X射線譜(Energy-dispersive X-ray spectroscopy,EDS)分 析後，白灰色基地相的成分百分比為銦：鉍：錫=62.2：23.5：14.46，符合三相圖的BiIn2相。第九圖是以67wt%的銦及33wt%的鉍共晶形成的該銦鉍合金(2)，熔點在70℃，而將第九圖以EDS分析後，白灰色基地相的成分百分比為銦：鉍=68.57：31.43，符合相圖的BiIn2相。第十圖是以25wt%的銦、57wt%的鉍及18wt%的錫共晶形成的該銦鉍合金(2)，熔點在80℃，而將第十圖以EDS分析後，白灰色基地相的成分百分比為銦：鉍：錫=46.76：50.84：2.4，符合三相圖的BiIn相，由以上分析可以得知，該固態夾層的基地相確實為BiIn2相或BiIn相。 Please refer to the eighth to tenth figures, and please match the first figure. The eighth to tenth figures are the microstructure photos of the indium-bismuth alloy (2) under different composition ratios observed by scanning microscope. The eighth figure is the indium-bismuth alloy (2) formed by the eutectic of 51wt% indium, 32.5wt% bismuth and 16.5wt% tin, and the melting point is 60℃. At this time, the atomic percentage of the indium-bismuth alloy (2) Is indium:bismuth:tin=60.1:21.1:18.8, and after analyzing the eighth figure with Energy-dispersive X-ray spectroscopy (EDS), the percentage of the white-gray base phase is indium:bismuth: Tin = 62.2: 23.5: 14.46, BiIn 2 phase conforming to the three-phase diagram. The ninth figure is the indium-bismuth alloy (2) formed by the eutectic of 67wt% indium and 33wt% bismuth. The melting point is 70℃. After the ninth figure is analyzed by EDS, the percentage of the white-gray base phase is indium. : Bismuth=68.57:31.43, the BiIn 2 phase in accordance with the phase diagram. The tenth figure is the indium-bismuth alloy (2) formed by 25wt% indium, 57wt% bismuth and 18wt% tin eutectic. The melting point is 80℃. After the tenth figure is analyzed by EDS, the white-gray base phase The percentage of the composition is indium: bismuth: tin = 46.76: 50.84: 2.4. The BiIn phase conforms to the three-phase diagram. From the above analysis, it can be known that the base phase of the solid interlayer is indeed BiIn 2 phase or BiIn phase.
綜合上述實施例之說明，當可充分瞭解本發明之操作、使用及本發明產生之功效，惟以上所述實施例僅係為本發明之較佳實施例，當不能以此限定本發明實施之範圍，即依本發明申請專利範圍及發明說明內容所作簡單的等效變化與修飾，皆屬本發明涵蓋之範圍內。 Based on the description of the above-mentioned embodiments, when one can fully understand the operation and use of the present invention and the effects of the present invention, the above-mentioned embodiments are only preferred embodiments of the present invention, and the implementation of the present invention cannot be limited by this. The scope, that is, simple equivalent changes and modifications made according to the scope of the patent application of the present invention and the description of the invention, are all within the scope of the present invention.
(1):熱源 (1): Heat source
(2):銦鉍合金 (2): Indium-bismuth alloy
(3):散熱固定件 (3): Heat dissipation fixture
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| TW200707675A (en) * | 2005-07-12 | 2007-02-16 | Honeywell Int Inc | Thermally conductive materials, solder preform constructions, assemblies and semiconductor packages |
| TW200719998A (en) * | 2005-08-12 | 2007-06-01 | Intel Corp | Bulk metallic glass solder |
| TW200822324A (en) * | 2006-11-15 | 2008-05-16 | Ind Tech Res Inst | Melting temperature adjustable metal thermal interface materials and use thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11976885B2 (en) | 2021-12-29 | 2024-05-07 | Industrial Technology Research Institute | Phase change thermal management device |
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| TW202125735A (en) | 2021-07-01 |
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