TWI698030B - Light emitting device - Google Patents

Light emitting device Download PDF

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TWI698030B
TWI698030B TW107141809A TW107141809A TWI698030B TW I698030 B TWI698030 B TW I698030B TW 107141809 A TW107141809 A TW 107141809A TW 107141809 A TW107141809 A TW 107141809A TW I698030 B TWI698030 B TW I698030B
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light
layer
emitting
emitting element
electrode
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TW107141809A
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TW201907580A (en
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林俊宇
徐子傑
蔡富鈞
黃意雯
呂志強
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晶元光電股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A light emitting device comprises a light-emitting stack comprising a sidewall and a top surface, and the light-emitting stack further comprises an active layer emitting a first light; a first electrode on the light-emitting stack and comprising an inner segment and an outer segment and a plurality of extending segments electrically connected the inner segment with the outer segment; a light-absorbing layer comprising a first portion surrounding the sidewall of the light-emitting stack, wherein top surface comprises a first region and a second region surrounding the first region.

Description

發光元件Light-emitting element

本發明係關於一發光元件，且特別係關於一具有一出光區及一電極區大致圍繞出光區的發光元件。The present invention relates to a light emitting element, and more particularly to a light emitting element having a light emitting area and an electrode area substantially surrounding the light emitting area.

發光二極體（Light Emitting Diode, LED）係為一固態照明元件，其優點為功耗低，產生的熱能低，工作壽命長，防震，體積小，反應速度快和具有良好的光電特性，例如穩定的發光波長。因此發光二極體被廣泛應用於家用電器，設備指示燈，及光電產品等。Light Emitting Diode (LED) is a solid-state lighting element. Its advantages are low power consumption, low heat generation, long working life, shockproof, small size, fast response speed and good photoelectric characteristics, such as Stable emission wavelength. Therefore, light-emitting diodes are widely used in household appliances, equipment indicators, and optoelectronic products.

發光二極體通常包含一發光疊層和兩個電極，透過兩個電極施加一電流於發光疊層使其發光。在一般情況下，電極可透過設計使電流於發光疊層上擴散開來，使可發光的發光區域與發光疊層的表面積大致相同。然而在其它應用領域上，需要於一有限的發光區域注入一高電流密度的電流以提高發光效率。A light-emitting diode usually includes a light-emitting stack and two electrodes, through which a current is applied to the light-emitting stack to make it emit light. In general, the electrode can be designed to spread the current on the light-emitting stack, so that the light-emitting area that can emit light is approximately the same as the surface area of the light-emitting stack. However, in other application fields, it is necessary to inject a high current density current into a limited light-emitting area to improve the light-emitting efficiency.

本發明係提供一種發光元件，其包含：一發光疊層具有一側壁以及一上表面，且發光疊層更包含一可發出一光線的主動層；一第一電極在發光疊層上，包含一內部及一外部，及複數之延伸部電連接內部及外部；以及一吸光層具有一第一部份圍繞發光疊層之側壁；其中上表面包含一第一區以及一第二區，第一區圍繞第二區。The present invention provides a light-emitting element, which includes: a light-emitting laminate having a side wall and an upper surface, and the light-emitting laminate further includes an active layer capable of emitting a light; a first electrode is on the light-emitting laminate, including a The inside and the outside, and the plurality of extensions are electrically connected to the inside and the outside; and a light-absorbing layer has a first part surrounding the sidewall of the light-emitting stack; wherein the upper surface includes a first area and a second area, the first area Around the second zone.

讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。To make the above-mentioned features and advantages of the present invention more obvious and understandable, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

為了使本發明之敘述更加詳盡與完備，請參照下列實施例之描述並配合相關圖示。惟，以下所示之實施例係用於例示本發明之發光元件，並非將本發明限定於以下之實施例。又，本說明書記載於實施例中的構成零件之尺寸、材質、形狀、相對配置等在沒有限定之記載下，本發明之範圍並非限定於此，而僅是單純之說明而已。且各圖示所示構件之大小或位置關係等，會由於為了明確說明有加以誇大之情形。更且，於以下之描述中，為了適切省略詳細說明，對於同一或同性質之構件用同一名稱、符號顯示。In order to make the description of the present invention more detailed and complete, please refer to the description of the following embodiments and related illustrations. However, the examples shown below are used to illustrate the light-emitting element of the present invention, and the present invention is not limited to the following examples. In addition, the dimensions, materials, shapes, relative arrangement, etc. of the constituent parts described in the examples in this specification are not limited to the description, and the scope of the present invention is not limited thereto, but is merely a description. In addition, the size or positional relationship of the components shown in each figure will be exaggerated for clear explanation. Furthermore, in the following description, in order to appropriately omit detailed descriptions, components of the same or similar nature are shown with the same names and symbols.

第1圖及第2圖係本發明第一實施例的一發光元件100。第1圖係發光元件100的上視圖。第2圖係發光元件100沿著AA′的剖面圖。發光元件100包含一基板10，一發光疊層13位於基板10上，一反射層12位於基板10及發光疊層13之間，以及一接合層11位於反射層12與基板10之間。發光疊層13包含一第一型半導體層131，一第二型半導體層133，及一主動層132位於第一型半導體層131與第二型半導體層133之間。第一型半導體層131與第二型半導體層133提供電子與電洞，電子與電洞於一電流驅動下在主動層132複合以發出一光線。發光疊層13之材料包含Ⅲ-Ⅴ族半導體材料，例如Alx Iny Ga(1-x-y) N或Alx Iny Ga(1-x-y) P，其中0≦x, y≦1；(x+y)≦1。依據主動層132之材料，發光疊層13可發出波長介於610 nm及650 nm之間的紅光，波長介於530 nm及570 nm之間的綠光，或是波長介於450 nm及490 nm之間的藍光。形成發光疊層13的方法沒有特別限制，除了有機金屬化學氣相沉積法（MOCVD），亦可使用分子束磊晶（MBE），氫化物氣相沉積法（HVPE），蒸鍍法和離子電鍍方法。發光元件100更包含一第一電極16位於第二型半導體層133上，一第二電極17位於基板10上，一吸光層18位於部份第一電極16上，以及一絕緣層19位於吸光層18與第二型半導體層133之間。於本實施例中，第一電極16為一圖案化電極，包含一內部161，一外部162，及複數延伸部163電連接內部161與外部162。如第2圖所示，發光元件100更包含一歐姆接觸層15位於內部161與發光疊層13之間，並分別與內部161及發光疊層13形成一歐姆接觸。歐姆接觸層15之形狀大致與內部161之形狀相同。歐姆接觸層15未形成於外部162與發光疊層13之間。於另一實施例中(圖未示)，歐姆接觸層15形成於外部162與發光疊層13之間，歐姆接觸層15之形狀大致與外部162之形狀相同。內部161與外部162之形狀包含圓形，方形，四邊形或多邊形。當內部161與外部162之形狀為圓形時，內部161與外部162係為一同心圓。Figures 1 and 2 show a light emitting device 100 according to the first embodiment of the present invention. Figure 1 is a top view of the light-emitting element 100. FIG. 2 is a cross-sectional view of the light-emitting element 100 along AA′. The light-emitting element 100 includes a substrate 10, a light-emitting stack 13 on the substrate 10, a reflective layer 12 between the substrate 10 and the light-emitting stack 13, and a bonding layer 11 between the reflective layer 12 and the substrate 10. The light-emitting stack 13 includes a first-type semiconductor layer 131, a second-type semiconductor layer 133, and an active layer 132 located between the first-type semiconductor layer 131 and the second-type semiconductor layer 133. The first type semiconductor layer 131 and the second type semiconductor layer 133 provide electrons and holes, and the electrons and holes are recombined in the active layer 132 under a current drive to emit a light. The material of the light-emitting stack 13 includes group III-V semiconductor materials, such as Al x In y Ga (1-xy) N or Al x In y Ga (1-xy) P, where 0≦x, y≦1; (x +y)≦1. Depending on the material of the active layer 132, the light-emitting laminate 13 can emit red light with wavelengths between 610 nm and 650 nm, green light with wavelengths between 530 nm and 570 nm, or wavelengths between 450 nm and 490. Blue light between nm. The method of forming the light-emitting laminate 13 is not particularly limited. In addition to metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydride vapor deposition (HVPE), vapor deposition and ion plating can also be used method. The light emitting element 100 further includes a first electrode 16 on the second type semiconductor layer 133, a second electrode 17 on the substrate 10, a light absorption layer 18 on a part of the first electrode 16, and an insulating layer 19 on the light absorption layer 18 and the second type semiconductor layer 133. In this embodiment, the first electrode 16 is a patterned electrode, and includes an inner portion 161, an outer portion 162, and a plurality of extension portions 163 electrically connecting the inner portion 161 and the outer portion 162. As shown in FIG. 2, the light-emitting device 100 further includes an ohmic contact layer 15 located between the inner portion 161 and the light-emitting stack 13, and respectively forms an ohmic contact with the inner portion 161 and the light-emitting stack 13. The shape of the ohmic contact layer 15 is substantially the same as the shape of the inner portion 161. The ohmic contact layer 15 is not formed between the exterior 162 and the light-emitting stack 13. In another embodiment (not shown), the ohmic contact layer 15 is formed between the outer portion 162 and the light-emitting stack 13, and the shape of the ohmic contact layer 15 is substantially the same as that of the outer portion 162. The shapes of the inner 161 and the outer 162 include a circle, a square, a quadrilateral or a polygon. When the shapes of the inner 161 and the outer 162 are circular, the inner 161 and the outer 162 are concentric circles.

如第2圖所示，發光疊層13的第二型半導體層133具有一側壁1331及一上表面。上表面具有一第一區1332及一第二區1333。第二區1333係由形成於第一區1332上之外部162所定義，使得第一區1332圍繞第二區1333，具體來說，第一區1332上的外部162圍繞第二區1333。內部161位於部份第二區1333上，且內部161未完全覆蓋第二區1333而裸露出部份第二型半導體層133，使得來自於主動層132的光線藉此裸露的部份射出於發光元件100之外。未被內部161覆蓋的第二區1333表面可藉由蝕刻，例如乾蝕刻或溼蝕刻，進行粗化以改善出光效率。吸光層18包含圍繞側壁1331的一第一部份181，及位於發光疊層13上表面的第一區1332上的一第二部份182。具體而言，絕緣層19及外部162形成並覆蓋於第二型半導體層133上表面的第一區1332上，吸光層18的第二部份182形成並覆蓋於絕緣層19及外部162上。此外，絕緣層19覆蓋於發光疊層13之側壁1331上，第一部份181覆蓋於絕緣層19之側壁上。如第2圖所示，由於歐姆接觸層15僅形成於內部161與發光疊層13之間，來自於內部161下方之主動層132(亦即第二區)的光線會有第一數量(亦即超過90%)透過第二區1333直接射出於發光元件100之外，第二數量(亦即少於10%)則射向吸光層18而被吸光層18吸收。於一實施例中，超過50%第二數量的光線會被吸光層18所吸收。此外，來自於主動層132的光線不會藉由第一區1332及側壁1331而射出於發光元件100之外。第二區1333之面積與發光疊層13上表面之面積的比例介於10%~90%之間，亦即發光面積定義為發光疊層13面積的10%~90%。吸光層18包含單層或複數層，並具有一厚度大於300 Å。吸光層18之材料包含鈦(Ti)，鉻(Cr)，鎳(Ni)，或上述之組合。第一電極16包含金屬或金屬合金。金屬包含銅(Cu)，鋁(Al)，金(Au)，鑭(La)，或銀(Ag)。金屬合金包含鍺金(GeAu)，鈹金(BeAu)，鉻金(CrAu)，銀鈦(AgTi)，銅錫(CuSn)，銅鋅(CuZn)，銅鎘(CuCd)，錫鉛銻(Sn-Pb-Sb)，錫鉛鋅(Sn-Pb-Zn)，鎳錫(NiSn)，或鎳鈷(NiCo)。吸光層18可做為一焊墊(pad)，藉由一引線鍵合(wire bond)與一外部結構(圖未示)，例如封裝基板，於一電流操作下形成電連接。As shown in FIG. 2, the second-type semiconductor layer 133 of the light-emitting stack 13 has a side wall 1331 and an upper surface. The upper surface has a first area 1332 and a second area 1333. The second area 1333 is defined by the outer portion 162 formed on the first area 1332 such that the first area 1332 surrounds the second area 1333, specifically, the outer portion 162 on the first area 1332 surrounds the second area 1333. The interior 161 is located on a part of the second region 1333, and the interior 161 does not completely cover the second region 1333 and exposes a part of the second type semiconductor layer 133, so that the light from the active layer 132 is emitted from the exposed part to emit light Outside element 100. The surface of the second region 1333 that is not covered by the inner portion 161 may be roughened by etching, such as dry etching or wet etching, to improve light extraction efficiency. The light-absorbing layer 18 includes a first portion 181 surrounding the sidewall 1331 and a second portion 182 located on the first region 1332 of the upper surface of the light-emitting stack 13. Specifically, the insulating layer 19 and the outer portion 162 are formed and covering the first region 1332 of the upper surface of the second-type semiconductor layer 133, and the second portion 182 of the light absorption layer 18 is formed and covering the insulating layer 19 and the outer portion 162. In addition, the insulating layer 19 covers the sidewall 1331 of the light-emitting stack 13, and the first portion 181 covers the sidewall of the insulating layer 19. As shown in Figure 2, since the ohmic contact layer 15 is only formed between the inner portion 161 and the light-emitting stack 13, the light from the active layer 132 (that is, the second area) under the inner portion 161 will have a first amount (also That is, more than 90%) passes through the second region 1333 and is directly emitted out of the light-emitting element 100, and the second amount (ie, less than 10%) is emitted to the light-absorbing layer 18 and absorbed by the light-absorbing layer 18. In one embodiment, more than 50% of the second amount of light will be absorbed by the light-absorbing layer 18. In addition, the light from the active layer 132 will not be emitted out of the light emitting device 100 through the first region 1332 and the sidewall 1331. The ratio of the area of the second region 1333 to the area of the upper surface of the light-emitting stack 13 is between 10% and 90%, that is, the light-emitting area is defined as 10% to 90% of the area of the light-emitting stack 13. The light-absorbing layer 18 includes a single layer or multiple layers, and has a thickness greater than 300 Å. The material of the light absorbing layer 18 includes titanium (Ti), chromium (Cr), nickel (Ni), or a combination thereof. The first electrode 16 includes metal or metal alloy. The metal includes copper (Cu), aluminum (Al), gold (Au), lanthanum (La), or silver (Ag). Metal alloys include germanium gold (GeAu), beryllium gold (BeAu), chromium gold (CrAu), silver titanium (AgTi), copper tin (CuSn), copper zinc (CuZn), copper cadmium (CuCd), tin lead antimony (Sn) -Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), nickel tin (NiSn), or nickel cobalt (NiCo). The light-absorbing layer 18 can be used as a pad to form an electrical connection with an external structure (not shown), such as a package substrate, under a current operation by a wire bond.

於本實施例中，反射層12被包覆於接合層11 中之位置對應於發光疊層13上表面的第二區1333之位置。當來自於主動層132的光線射向基板10時，光線可被反射層12反射並朝向第二型半導體層133。由於部份光線僅經由第二型半導體層133上表面的第二區1333而射出，反射層12之面積大致與第二型半導體層133上表面的第二區1333之面積相同。於另一實施例中，反射層12之面積可大於第二型半導體層133上表面的第二區1333之面積。In this embodiment, the position where the reflective layer 12 is covered in the bonding layer 11 corresponds to the position of the second region 1333 on the upper surface of the light-emitting laminate 13. When the light from the active layer 132 is directed toward the substrate 10, the light can be reflected by the reflective layer 12 and directed toward the second-type semiconductor layer 133. Since part of the light only exits through the second region 1333 on the upper surface of the second type semiconductor layer 133, the area of the reflective layer 12 is approximately the same as the area of the second region 1333 on the upper surface of the second type semiconductor layer 133. In another embodiment, the area of the reflective layer 12 may be larger than the area of the second region 1333 on the upper surface of the second-type semiconductor layer 133.

第3圖及第4圖係本發明第二實施例的一發光元件200。第3圖係發光元件200的上視圖。第4圖係發光元件200沿著BB′的剖面圖。發光元件200之結構與第一實施例中發光元件100之結構類似，除了發光元件200之內部161有兩個次內部1611，1612。複數個第一延伸部1631電連接兩個次內部1611，1612與外部162。兩個次內部1611，1612中之任一個藉由複數個第二延伸部1632與外部162電連接。第一延伸部1631與第二延伸部1632係交錯排列。外部162包含複數個凸部164。在此藉由外部162及凸部164定義第二區1333，其中來自於主動層132之光線僅會經由第二區1333射出於發光元件200。如第4圖所示，歐姆接觸層15位於兩個次內部1611，1612與發光疊層13之間以提供歐姆接觸。歐姆接觸層15之形狀大致與內部161之兩個次內部1611，1612相同。歐姆接觸層15未形成於外部162與發光疊層13之間。於另一實施例中(圖未示)，歐姆接觸層15可形成於外部162與發光疊層13之間，歐姆接觸層15之形狀大致與外部162之形狀相同。內部161的兩個次內部1611，1612及外部162之形狀包含圓形，方形，四邊形或多邊形。當內部161的兩個次內部1611，1612及外部162之形狀為圓形時，其互為同心圓。第二區1333之面積與發光疊層13上表面之面積的比例介於10%~90%之間。內部及外部之數量可隨實施方式而調整，來自於主動層132之光線藉由第二區1333射出發光元件外的第二區1333之面積越大，內部162及外部162之數量越多。Figures 3 and 4 show a light emitting device 200 according to the second embodiment of the present invention. FIG. 3 is a top view of the light-emitting element 200. FIG. 4 is a cross-sectional view of the light-emitting element 200 along BB'. The structure of the light-emitting element 200 is similar to the structure of the light-emitting element 100 in the first embodiment, except that the interior 161 of the light-emitting element 200 has two sub-inner sections 1611 and 1612. The plurality of first extension portions 1631 are electrically connected to the two secondary inner portions 1611 and 1612 and the outer portion 162. Any one of the two secondary inner portions 1611 and 1612 is electrically connected to the outer portion 162 through a plurality of second extension portions 1632. The first extension 1631 and the second extension 1632 are arranged in a staggered manner. The outer portion 162 includes a plurality of convex portions 164. Here, the second region 1333 is defined by the outer portion 162 and the convex portion 164, in which light from the active layer 132 will only be emitted out of the light emitting device 200 through the second region 1333. As shown in Figure 4, the ohmic contact layer 15 is located between the two sub-inner sections 1611, 1612 and the light-emitting stack 13 to provide ohmic contact. The shape of the ohmic contact layer 15 is approximately the same as the two secondary inner portions 1611 and 1612 of the inner portion 161. The ohmic contact layer 15 is not formed between the exterior 162 and the light-emitting stack 13. In another embodiment (not shown), the ohmic contact layer 15 may be formed between the outer portion 162 and the light-emitting stack 13, and the shape of the ohmic contact layer 15 is substantially the same as that of the outer portion 162. The shapes of the two secondary inner portions 1611, 1612 and outer portion 162 of the inner portion 161 include a circle, a square, a quadrilateral, or a polygon. When the shapes of the two secondary inner portions 1611, 1612 and outer portion 162 of the inner portion 161 are circular, they are concentric circles with each other. The ratio of the area of the second region 1333 to the area of the upper surface of the light-emitting stack 13 is between 10% and 90%. The number of interior and exterior can be adjusted according to the implementation. The larger the area of the second region 1333 outside the light-emitting element through the second region 1333 of the light from the active layer 132 is, the greater the number of the interior 162 and the exterior 162.

第5A圖及第5B圖係本發明第三實施例的一發光元件 300。第5A圖係本發明第三實施例的一發光元件300的上視圖。第5B圖係第5A圖的發光元件300沿著XX′的剖面圖。如第5A圖所示，發光元件300包含一發光區與一電極區大致圍繞發光區，其中發光區大致位於發光元件300之中央，電極區為一吸光區，換言之為一不發光區。發光區於上視圖上的形狀大致為一圓形，但發光區的形狀並不以此為限制，也可以為多邊形，例如三角形或方形。以發光區的形狀為圓形為例，發光區可為直徑介於0.004~0.5 mm之間的圓，較佳為直徑介於0.001~0.2 mm之間的圓。發光元件300之結構與第一實施例中發光元件100之結構類似，除了發光元件300包含一溝渠20，溝渠20將發光元件300之一磊晶結構33分隔為一第一半導體結構22及一第二半導體結構24，其中第一半導體結構22於一上視圖上大致為一圓形，第二半導體結構24圍繞第一半導體結構22。第一半導體結構22及第二半導體結構24具有大致相同之磊晶結構33，彼此之材料組成及堆疊結構實質上相同，其中磊晶結構33包含一第一型半導體層331，第二型半導體層333，及一主動層332位於第一型半導體層331與第二型半導體層333之間。溝渠20將第一半導體結構22之主動層332、第二型半導體層333與第二半導體結構24之主動層332、第二型半導體層333分隔開來，但是第一半導體結構22之第一型半導體層331與第二半導體結構24之第一型半導體層331係相連接。第一半導體結構22於一電流操作下，第一半導體結構22之主動層332可發出一具有一第一主波長之第一光線；第二半導體結構24於一電流操作下，第二半導體結構24之主動層332可發出一具有一第二主波長之第二光線，其中第一主波長與第二主波長係位於相同之波長範圍，或是第一光線之主波長與第二光線之主波長實質上相同，例如第一主波長與第二主波長可為波長介於610 nm及650 nm之間的紅光，波長介於530 nm及570 nm之間的綠光，或是波長介於450 nm及490 nm之間的藍光。Fig. 5A and Fig. 5B show a light emitting device 300 according to the third embodiment of the present invention. FIG. 5A is a top view of a light emitting device 300 according to the third embodiment of the invention. FIG. 5B is a cross-sectional view of the light-emitting element 300 of FIG. 5A along XX'. As shown in FIG. 5A, the light-emitting element 300 includes a light-emitting area and an electrode area substantially surrounding the light-emitting area, wherein the light-emitting area is approximately located in the center of the light-emitting element 300, and the electrode area is a light-absorbing area, in other words, a non-light-emitting area. The shape of the light-emitting area in the top view is roughly a circle, but the shape of the light-emitting area is not limited to this, and may also be a polygon, such as a triangle or a square. Taking the shape of the light-emitting area as a circle as an example, the light-emitting area may be a circle with a diameter between 0.004 and 0.5 mm, preferably a circle with a diameter between 0.001 and 0.2 mm. The structure of the light-emitting element 300 is similar to the structure of the light-emitting element 100 in the first embodiment, except that the light-emitting element 300 includes a trench 20, which separates an epitaxial structure 33 of the light-emitting element 300 into a first semiconductor structure 22 and a second semiconductor structure. Two semiconductor structures 24, in which the first semiconductor structure 22 is approximately a circle in a top view, and the second semiconductor structure 24 surrounds the first semiconductor structure 22. The first semiconductor structure 22 and the second semiconductor structure 24 have substantially the same epitaxial structure 33, and their material composition and stack structure are substantially the same. The epitaxial structure 33 includes a first type semiconductor layer 331 and a second type semiconductor layer 333 and an active layer 332 are located between the first type semiconductor layer 331 and the second type semiconductor layer 333. The trench 20 separates the active layer 332 and the second type semiconductor layer 333 of the first semiconductor structure 22 from the active layer 332 and the second type semiconductor layer 333 of the second semiconductor structure 24, but the first semiconductor structure 22 The type semiconductor layer 331 is connected to the first type semiconductor layer 331 of the second semiconductor structure 24. When the first semiconductor structure 22 is operated by a current, the active layer 332 of the first semiconductor structure 22 can emit a first light having a first dominant wavelength; the second semiconductor structure 24 is operated by a current, and the second semiconductor structure 24 The active layer 332 can emit a second light with a second dominant wavelength, where the first dominant wavelength and the second dominant wavelength are in the same wavelength range, or the dominant wavelength of the first light and the dominant wavelength of the second light Substantially the same. For example, the first dominant wavelength and the second dominant wavelength can be red light with a wavelength between 610 nm and 650 nm, green light with a wavelength between 530 nm and 570 nm, or a wavelength between 450 Blue light between nm and 490 nm.

為了避免第一半導體結構22之主動層332所發出的第一光線側漏至第二半導體結構24，溝渠20包含一層或多層絕緣層，絕緣層之絕緣材料可吸收第一光線或可反射第一光線。絕緣材料包含有機高分子材料或是無機材料。In order to prevent the first light emitted from the active layer 332 of the first semiconductor structure 22 from leaking to the second semiconductor structure 24, the trench 20 includes one or more insulating layers. The insulating material of the insulating layer can absorb the first light or reflect the first light. Light. The insulating material includes organic polymer materials or inorganic materials.

發光元件300之一反射層12覆蓋於第一半導體結構22上之部份與覆蓋於第二半導體結構24上之部份係相連，其中於發光元件300之一俯視圖下，反射層12之位置以對應於出光區位置之方式配置且反射層12之面積可與出光區之面積相同或大於出光區之面積。當來自於主動層332的第一光線及/或第二光線射向基板10時，第一光線及/或第二光線可被反射層12反射並朝向第二型半導體層333，於靠近第二型半導體層333之一側出光，具體而言，第一光線及第二光線實質上全部自發光元件300之一頂面33S發出。於一實施例中，頂面33S可藉由蝕刻或壓印等方式形成一粗化面，以改善發光元件300之出光效率。The portion of the reflective layer 12 covering the first semiconductor structure 22 of the light-emitting element 300 is connected to the portion covering the second semiconductor structure 24. In a top view of the light-emitting element 300, the position of the reflective layer 12 is It is arranged in a manner corresponding to the position of the light-emitting area, and the area of the reflective layer 12 can be the same as or larger than the area of the light-emitting area. When the first light and/or the second light from the active layer 332 is directed to the substrate 10, the first light and/or the second light can be reflected by the reflective layer 12 and directed toward the second-type semiconductor layer 333, near the second type semiconductor layer 333. Light is emitted from one side of the type semiconductor layer 333. Specifically, the first light and the second light are substantially all emitted from a top surface 33S of the light emitting element 300. In one embodiment, the top surface 33S may be a roughened surface formed by etching or embossing to improve the light emitting efficiency of the light emitting device 300.

如第5A圖所示，電極區包含複數個外電極結構，複數個外電極結構大致圍繞第二半導體結構24。複數個外電極結構包含第一外電極結構28及第二外電極結構38，各外電極結構28，38可做為一焊墊(pad)，藉由一引線鍵合(wire bond)與一外部結構(圖未示)，例如封裝基板，於一電流操作下形成電連接。第一外電極結構28及第二外電極結構38分別包含一絕緣層19及一導電層281，其中絕緣層19位於第二半導體結構24與導電層281之間。導電層281之材料包含金屬或金屬合金。金屬包含鑭(La)，銅(Cu)，鋁(Al)，金(Au)，或銀(Ag)。金屬合金包含鍺金(GeAu)，鈹金(BeAu)，鉻金(CrAu)，銀鈦(AgTi)，銅錫(CuSn)，銅鋅(CuZn)，銅鎘(CuCd)，錫鉛銻(Sn-Pb-Sb)，錫鉛鋅(Sn-Pb-Zn)，鎳錫(NiSn)，或鎳鈷(NiCo)。As shown in FIG. 5A, the electrode area includes a plurality of external electrode structures, and the plurality of external electrode structures substantially surround the second semiconductor structure 24. The plurality of external electrode structures includes a first external electrode structure 28 and a second external electrode structure 38. Each of the external electrode structures 28, 38 can be used as a pad, which is connected to an external electrode by a wire bond. Structures (not shown), such as package substrates, are electrically connected under a current operation. The first external electrode structure 28 and the second external electrode structure 38 respectively include an insulating layer 19 and a conductive layer 281, wherein the insulating layer 19 is located between the second semiconductor structure 24 and the conductive layer 281. The material of the conductive layer 281 includes metal or metal alloy. The metal includes lanthanum (La), copper (Cu), aluminum (Al), gold (Au), or silver (Ag). Metal alloys include germanium gold (GeAu), beryllium gold (BeAu), chromium gold (CrAu), silver titanium (AgTi), copper tin (CuSn), copper zinc (CuZn), copper cadmium (CuCd), tin lead antimony (Sn) -Pb-Sb), tin-lead-zinc (Sn-Pb-Zn), nickel tin (NiSn), or nickel cobalt (NiCo).

如第5A圖所示，第一外電極結構28之數量為一對，第二外電極結構38之數量為一對，其中一對第一外電極結構28係彼此相對，一對第二外電極結構38係彼此相對，多個第一外電極結構28與多個第二外電極結構38彼此交錯排列，但第一外電極結構28與第二外電極結構38之數量及排列方式並不以上述為限制。As shown in Fig. 5A, the number of the first external electrode structure 28 is a pair, and the number of the second external electrode structure 38 is a pair. A pair of the first external electrode structure 28 is opposite to each other, and a pair of the second external electrode The structures 38 are opposite to each other, and the plurality of first external electrode structures 28 and the plurality of second external electrode structures 38 are alternately arranged with each other, but the number and arrangement of the first external electrode structures 28 and the second external electrode structures 38 are not as described above. As a limit.

如第5A圖所示，發光元件300包含複數延伸電極位於磊晶結構33上。具體來說，複數延伸電極包含一第一延伸電極221位於第一半導體結構22上及一第二延伸電極241位於第二半導體結構24上，第一延伸電極221或第二延伸電極241之形狀包含環形，但為了達到電流擴散均勻之目的，第一延伸電極221與第二延伸電極241之數量及形狀並不以上述及圖示為限制。As shown in FIG. 5A, the light emitting device 300 includes a plurality of extended electrodes on the epitaxial structure 33. Specifically, the plurality of extension electrodes includes a first extension electrode 221 located on the first semiconductor structure 22 and a second extension electrode 241 located on the second semiconductor structure 24. The shape of the first extension electrode 221 or the second extension electrode 241 includes It is ring-shaped, but in order to achieve uniform current spreading, the number and shape of the first extension electrode 221 and the second extension electrode 241 are not limited by the above and the illustration.

如第5A圖所示，發光元件300包含一第一連接電極223連接第一延伸電極221及第一外電極結構28；以及一第二連接電極243連接第二延伸電極241及第二外電極結構38。As shown in FIG. 5A, the light-emitting element 300 includes a first connecting electrode 223 connecting the first extension electrode 221 and the first external electrode structure 28; and a second connecting electrode 243 connecting the second extension electrode 241 and the second external electrode structure 28 38.

發光元件300可選擇性地包含一歐姆接觸層位於延伸電極，例如第一延伸電極221、第二延伸電極241，與磊晶結構33之間。如第5B圖所示，發光元件300包含一第一歐姆接觸層222位於第一延伸電極221與第二型半導體層333之間；以及一第二歐姆接觸層242位於第二延伸電極241與第二型半導體層333之間。於另一實施例中，發光元件300可包含一歐姆接觸層362位於第一外電極結構28之導電層281與第二導電型半導體層333之間，及/或位於第二外電極結構38之導電層281與第二型半導體層333之間。歐姆接觸層222，242之形狀大致與延伸電極相同。藉由歐姆接觸層222，242，362，可降低延伸電極與第二型半導體層333之間的接觸電阻，和導電層281與第二型半導體層333之間的接觸電阻。The light emitting device 300 may optionally include an ohmic contact layer located between the extension electrodes, such as the first extension electrode 221 and the second extension electrode 241, and the epitaxial structure 33. As shown in FIG. 5B, the light emitting element 300 includes a first ohmic contact layer 222 located between the first extension electrode 221 and the second type semiconductor layer 333; and a second ohmic contact layer 242 located between the second extension electrode 241 and the second semiconductor layer 333; Between the second type semiconductor layer 333. In another embodiment, the light-emitting element 300 may include an ohmic contact layer 362 located between the conductive layer 281 of the first external electrode structure 28 and the second conductive semiconductor layer 333, and/or located between the second external electrode structure 38 Between the conductive layer 281 and the second type semiconductor layer 333. The shapes of the ohmic contact layers 222 and 242 are approximately the same as the extension electrodes. With the ohmic contact layers 222, 242, 362, the contact resistance between the extension electrode and the second type semiconductor layer 333 and the contact resistance between the conductive layer 281 and the second type semiconductor layer 333 can be reduced.

如第5B圖所示，發光元件300包含一下電極37形成於一基板10上。下電極37可同時電性連接第一半導體結構22之第一型半導體層331與第二半導體結構24之第一型半導體層331，形成一具有垂直式電極之發光元件，基板10為一具有導電性之基板，基板10之材料包含半導體材料或金屬材料。As shown in FIG. 5B, the light-emitting element 300 includes a bottom electrode 37 formed on a substrate 10. The bottom electrode 37 can electrically connect the first type semiconductor layer 331 of the first semiconductor structure 22 and the first type semiconductor layer 331 of the second semiconductor structure 24 at the same time to form a light emitting element with vertical electrodes. The substrate 10 is a conductive For a flexible substrate, the material of the substrate 10 includes a semiconductor material or a metal material.

如第5A圖所示，電極區之第一外電極結構28可做為一第一電極組，用以接收一第一電流值，與下電極37形成一電流通路，驅動第一半導體結構22發出一具有第一亮度之第一光線；第二外電極結構38相異於第一電極組，可做為一第二電極組，用以接收一第二電流值以驅動第二半導體結構24發出一具有第二亮度之第二光線。第一亮度與第二亮度之大小可藉由第一電流值與第二電流值之大小來調整，亦可藉由第一半導體結構22與第二半導體結構24之尺寸，例如第一半導體結構22之主動層332面積與第二半導體結構24之主動層332面積，來調整。例如當第一半導體結構22之主動層332面積小於第二半導體結構24之主動層332面積，且第一電流值等於第二電流值時，則第一亮度會大於第二亮度。當第一半導體結構22之主動層332面積等於第二半導體結構24之主動層332面積，且第一電流值大於第二電流值時，則第一亮度會大於第二亮度。As shown in FIG. 5A, the first outer electrode structure 28 of the electrode area can be used as a first electrode group for receiving a first current value, forming a current path with the bottom electrode 37, and driving the first semiconductor structure 22 to emit A first light with a first brightness; the second outer electrode structure 38 is different from the first electrode group, and can be used as a second electrode group for receiving a second current value to drive the second semiconductor structure 24 to emit a A second light with a second brightness. The size of the first brightness and the second brightness can be adjusted by the size of the first current value and the second current value, or by the size of the first semiconductor structure 22 and the second semiconductor structure 24, such as the first semiconductor structure 22 The area of the active layer 332 and the area of the active layer 332 of the second semiconductor structure 24 are adjusted. For example, when the area of the active layer 332 of the first semiconductor structure 22 is smaller than the area of the active layer 332 of the second semiconductor structure 24, and the first current value is equal to the second current value, the first brightness will be greater than the second brightness. When the area of the active layer 332 of the first semiconductor structure 22 is equal to the area of the active layer 332 of the second semiconductor structure 24, and the first current value is greater than the second current value, the first brightness will be greater than the second brightness.

第一電極組及第二電極組可單獨或同時接收電流值。如第5A圖所示，當只有第一電極組，亦即第一外電極結構28，單獨接收第一電流值時，僅驅動第一半導體結構22發出第一光線。如第6圖所示，當只有第二電極組，亦即第二外電極結構38，單獨接收第二電流值時，僅驅動第二半導體結構24發出第二光線。如第7圖所示，當第一電極組及第二電極組，亦即第一外電極結構28及第二外電極結構38，分別同時接收第一電流值及第二電流值時，第一半導體結構22及第二半導體結構24會同時發出第一光線及第二光線。The first electrode group and the second electrode group can receive current values individually or simultaneously. As shown in FIG. 5A, when only the first electrode group, that is, the first outer electrode structure 28, receives the first current value alone, only the first semiconductor structure 22 is driven to emit the first light. As shown in FIG. 6, when only the second electrode group, that is, the second external electrode structure 38, receives the second current value alone, only the second semiconductor structure 24 is driven to emit the second light. As shown in Figure 7, when the first electrode group and the second electrode group, that is, the first external electrode structure 28 and the second external electrode structure 38, receive the first current value and the second current value simultaneously, the first The semiconductor structure 22 and the second semiconductor structure 24 emit the first light and the second light simultaneously.

以上各圖式與說明雖僅分別對應特定實施例，然而，各個實施例中所說明或揭露之元件、實施方式、設計準則、及技術原理除在彼此顯相衝突、矛盾、或難以共同實施之外，吾人當可依其所需任意參照、交換、搭配、協調、或合併。Although the above drawings and descriptions only correspond to specific embodiments respectively, however, the elements, implementations, design criteria, and technical principles described or disclosed in the various embodiments are in conflict, contradictory, or difficult to implement together. In addition, we should be free to refer, exchange, match, coordinate, or merge as needed.

雖然本發明已說明如上，然其並非用以限制本發明之範圍、實施順序、或使用之材料與製程方法。對於本發明所作之各種修飾與變更，皆不脫本發明之精神與範圍。Although the present invention has been described above, it is not intended to limit the scope, implementation sequence, or materials and manufacturing methods of the present invention. Various modifications and changes made to the present invention do not depart from the spirit and scope of the present invention.

10‧‧‧基板11‧‧‧接合層12‧‧‧反射層13‧‧‧發光疊層131‧‧‧第一型半導體層132‧‧‧主動層133‧‧‧第二型半導體層1331‧‧‧側壁1332‧‧‧第一區1333‧‧‧第二區15‧‧‧歐姆接觸層16‧‧‧第一電極161‧‧‧內部1611、1612‧‧‧次內部1631‧‧‧第一延伸部1632‧‧‧第二延伸部162‧‧‧外部164‧‧‧凸部17‧‧‧第二電極18‧‧‧吸光層181‧‧‧第一部份182‧‧‧第二部份19‧‧‧絕緣層100、200、300‧‧‧發光元件20‧‧‧溝渠22‧‧‧第一半導體結構221‧‧‧第一延伸電極222‧‧‧第一歐姆接觸層223‧‧‧第一連接電極24‧‧‧第二半導體結構241‧‧‧第二延伸電極242‧‧‧第二歐姆接觸層243‧‧‧第二連接電極28‧‧‧第一外電極結構38‧‧‧第二外電極結構281‧‧‧導電層33‧‧‧磊晶結構33S‧‧‧頂面331‧‧‧第一型半導體層332‧‧‧主動層333‧‧‧第二型半導體層362‧‧‧歐姆接觸層37‧‧‧下電極10‧‧‧Substrate 11‧‧‧Joint layer 12‧‧‧Reflective layer 13‧‧‧Light-emitting stack 131‧‧‧First type semiconductor layer 132‧‧‧Active layer 133‧‧‧Second type semiconductor layer 1331‧ ‧‧Sidewall 1332‧‧‧First zone 1333‧‧‧Second zone 15‧‧‧Ohm contact layer 16‧‧‧First electrode 161‧‧‧Internal 1611, 1612‧‧‧Internal 1631‧‧‧First Extension 1632‧‧‧Second extension 162‧‧‧Outer 164‧‧‧Protrusion 17‧‧‧Second electrode 18‧‧‧Light-absorbing layer 181‧‧‧First part 182‧‧‧Second part 19‧‧‧Insulation layer 100, 200, 300‧‧‧Light emitting element 20‧‧‧Trench 22‧‧‧First semiconductor structure 221‧‧‧First extension electrode 222‧‧‧First ohmic contact layer 223‧‧‧ First connection electrode 24‧‧‧Second semiconductor structure 241‧‧‧Second extension electrode 242‧‧‧Second ohmic contact layer 243‧‧‧Second connection electrode 28‧‧‧First external electrode structure 38‧‧‧ Second external electrode structure 281‧‧‧Conducting layer 33‧‧‧Epitaxial structure 33S‧‧‧Top surface 331‧‧‧First type semiconductor layer 332‧‧‧Active layer 333‧‧‧Second type semiconductor layer 362‧ ‧‧Ohm contact layer 37‧‧‧Bottom electrode

第1圖係本發明第一實施例的一發光元件的上視圖。Fig. 1 is a top view of a light-emitting element according to the first embodiment of the present invention.

第2圖係第1圖的發光元件沿著AA′的剖面圖。Fig. 2 is a cross-sectional view of the light-emitting element of Fig. 1 along AA'.

第3圖係本發明第二實施例的一發光元件的上視圖。Figure 3 is a top view of a light-emitting element according to the second embodiment of the present invention.

第4圖係第3圖的發光元件沿著BB′的剖面圖。Fig. 4 is a cross-sectional view of the light-emitting element of Fig. 3 along BB'.

第5A圖係本發明第三實施例的一發光元件的上視圖。FIG. 5A is a top view of a light-emitting element according to the third embodiment of the present invention.

第5B圖係第5A圖的發光元件沿著XX′的剖面圖。Fig. 5B is a cross-sectional view of the light-emitting element of Fig. 5A along XX'.

第6圖係本發明第三實施例的一發光元件的上視圖。Fig. 6 is a top view of a light-emitting element according to the third embodiment of the present invention.

第7圖係本發明第三實施例的一發光元件的上視圖。Fig. 7 is a top view of a light-emitting element according to the third embodiment of the present invention.

10‧‧‧基板 10‧‧‧Substrate

11‧‧‧接合層 11‧‧‧Joint layer

12‧‧‧反射層 12‧‧‧Reflective layer

19‧‧‧絕緣層 19‧‧‧Insulation layer

20‧‧‧溝渠 20‧‧‧Ditch

22‧‧‧第一半導體結構 22‧‧‧First semiconductor structure

221‧‧‧第一延伸電極 221‧‧‧First extension electrode

222‧‧‧第一歐姆接觸層 222‧‧‧First ohm contact layer

223‧‧‧第一連接電極 223‧‧‧First connecting electrode

24‧‧‧第二半導體結構 24‧‧‧Second semiconductor structure

241‧‧‧第二延伸電極 241‧‧‧Second extension electrode

242‧‧‧第二歐姆接觸層 242‧‧‧The second ohmic contact layer

243‧‧‧第二連接電極 243‧‧‧Second connecting electrode

28‧‧‧第一外電極結構 28‧‧‧First outer electrode structure

281‧‧‧導電層 281‧‧‧Conductive layer

300‧‧‧發光元件 300‧‧‧Light-emitting element

33‧‧‧磊晶結構 33‧‧‧Epitaxial structure

33S‧‧‧頂面 33S‧‧‧Top surface

331‧‧‧第一型半導體層 331‧‧‧Type 1 semiconductor layer

332‧‧‧主動層 332‧‧‧Active layer

333‧‧‧第二型半導體層 333‧‧‧Second type semiconductor layer

362‧‧‧歐姆接觸層 362‧‧‧Ohm contact layer

37‧‧‧下電極 37‧‧‧Lower electrode

38‧‧‧第二外電極結構 38‧‧‧Second outer electrode structure

Claims (10)

一種發光元件，包括：一磊晶結構，包括一第一部分；一第二部分；以及一溝渠，位於該第一部分與該第二部分之間，且該第一部分與該第二部分可分別被驅動而發光；其中該發光元件具有一上表面，該上表面包含一發光區，且於該發光元件的上視圖中，該發光區的形狀為圓形。 A light-emitting element includes: an epitaxial structure including a first part; a second part; and a trench located between the first part and the second part, and the first part and the second part can be driven separately The light-emitting element has an upper surface, the upper surface includes a light-emitting area, and in the top view of the light-emitting element, the shape of the light-emitting area is a circle. 如申請專利範圍第1項所述的發光元件，該第一部分包括一第一主動層，該第二部分包括一第二主動層，且該第一主動層的面積小於或等於該第二主動層的面積。 According to the light-emitting element described in claim 1, the first part includes a first active layer, the second part includes a second active layer, and the area of the first active layer is smaller than or equal to the second active layer Area. 如申請專利範圍第1項所述的發光元件，更包括一第一電極以及一第二電極，其中該磊晶結構具有一第一側及相對於該第一側的一第二側，而該第一電極位於該第一側，該第二電極位於該第二側。 The light-emitting element described in the first item of the patent application further includes a first electrode and a second electrode, wherein the epitaxial structure has a first side and a second side opposite to the first side, and the The first electrode is located on the first side, and the second electrode is located on the second side. 一種發光元件，包括：一磊晶結構，包括：一第一部分；一第二部分；以及一溝渠，位於該第一部分與該第二部分之間，且該第一部分與該第二部分可分別被驅動而發光； 其中該第一部分之一部分與該第二部分之一部分相連接。 A light-emitting element includes: an epitaxial structure, including: a first part; a second part; and a trench located between the first part and the second part, and the first part and the second part can be separated by Drive and glow; Wherein a part of the first part is connected with a part of the second part. 如申請專利範圍第1項或第4項所述的發光元件，其中該第一部分包括一第一半導體層、一第一主動層及一第二半導體層，且該第一主動層位於該第一半導體層及第二半導體層之間，該第二部分包括一第三半導體層、一第二主動層及一第四半導體層，且該第二主動層位於該第三半導體層及該第四半導體層之間。 The light-emitting device according to item 1 or item 4 of the scope of patent application, wherein the first part includes a first semiconductor layer, a first active layer, and a second semiconductor layer, and the first active layer is located on the first semiconductor layer. Between the semiconductor layer and the second semiconductor layer, the second portion includes a third semiconductor layer, a second active layer, and a fourth semiconductor layer, and the second active layer is located between the third semiconductor layer and the fourth semiconductor layer Between layers. 如申請專利範圍第5項所述的發光元件，其中該第一半導體層及該第一主動層透過該溝渠而與該第二主動層及該第三半導體層分隔開來。 According to the light-emitting device described in claim 5, the first semiconductor layer and the first active layer are separated from the second active layer and the third semiconductor layer through the trench. 如申請專利範圍第6項所述的發光元件，其中該第二半導體層與該第四半導體層相連接。 According to the light-emitting element described in claim 6, wherein the second semiconductor layer is connected to the fourth semiconductor layer. 如申請專利範圍第1項或第4項所述的發光元件，更包括一外電極結構，其中該發光元件具有一上表面，該上表面包含一發光區及一不發光區，且該外電極結構位於該不發光區。 The light-emitting element described in item 1 or item 4 of the scope of patent application further includes an external electrode structure, wherein the light-emitting element has an upper surface, the upper surface includes a light-emitting area and a non-light-emitting area, and the outer electrode The structure is located in the non-luminous area. 如申請專利範圍第1項或第4項所述的發光元件，更包括一絕緣層，位於該溝渠中。 The light-emitting device as described in item 1 or item 4 of the scope of patent application further includes an insulating layer located in the trench. 如申請專利範圍第1項或第4項所述的發光元件，其中於該發光元件的上視圖中，該第二部分圍繞該第一部分。 The light-emitting element according to item 1 or item 4 of the scope of patent application, wherein in the top view of the light-emitting element, the second part surrounds the first part.
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