CN102856451A - Semiconductor epitaxial growth substrate - Google Patents
Semiconductor epitaxial growth substrate Download PDFInfo
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- CN102856451A CN102856451A CN 201210159669 CN201210159669A CN102856451A CN 102856451 A CN102856451 A CN 102856451A CN 201210159669 CN201210159669 CN 201210159669 CN 201210159669 A CN201210159669 A CN 201210159669A CN 102856451 A CN102856451 A CN 102856451A
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Abstract
The invention disclosures a growth substrate divided into sub-regions. The substrate comprises a growth substrate, a groove formed in a first main surface of the growth substrate, wherein a oxide covering or a nitride covering is formed in the groove, and the groove divides the growth substrate into at least two sub-regions; the looked-down shape of the groove includes straight line, circular arc, curve line, and irregular shapes; the shape of the sub-regions includes triangular, square, rectangular, parallelogram, pentagon, hexagon, octagon, circular, annular, irregular, and irregular annular shapes, and combination of the shapes. the width of the groove is greater than or equal to twice the thickness of the predetermined subsequent grown epitaxial layer; the growth substrate further comprises an edge groove which is formed in the edge of the circumference of the growth substrate; and the shape of the edge groove includes an annular shape and a irregular shape.
Description
Technical field
The present invention relates to a kind of growth substrates of semiconductor epitaxial growth.
Background technology
In order to reduce production costs, so that LED enters the general illumination field, the LED industry is experiencing the evolution of adopting large-sized growth substrates.The size of growth substrates is larger, and homogeneity question is more important, only has the epitaxially grown homogeneity question that has solved the large scale growth substrates, adopts the large scale growth substrates and could fully show in order to reduce the advantage of cost.
When epitaxial growth, the graphite plate of the second first type surface of growth substrates contact heating, temperature is higher; The heat radiation of the first first type surface of growth substrates, and contact gas, temperature is lower, and the temperature difference between two first type surfaces is so that the growth substrates warpage.In addition, epitaxial loayer is different from the thermal expansion factor of growth substrates, the internal stress of each growth substrates, thickness and thickness evenness etc. are different, therefore, warpage can occur in every growth substrates in epitaxial process, and, shape and the degree of warpage are different, and this causes the performance of each chip on the epitaxial wafer different just so that the distribution in the temperature field of every growth substrates is different.Just improve equipment merely the very difficult homogeneity question that solves the performance of the chip on the same epitaxial wafer fully.
Therefore, need to improve growth substrates.In this direction, some effort have been arranged.
In order to localize and to minimize the effect of the mismatch of lattice constant and thermal expansion factor, Chinese patent application 2005100089317 proposes a kind of growth substrates, namely, at first on growth substrates, form trap by etching, the place that does not etch into forms the trap wall, then carry out epitaxial growth, epitaxial loayer is grown in the top of trap and trap wall simultaneously, forms a whole epitaxial loayer.Its shortcoming is: form pollution and damage that the technique of trap and trap wall causes growth substrates, affect the performance of follow-up epitaxially grown epitaxial loayer; Can not reduce the growth substrates warpage that the temperature difference between two first type surfaces of growth substrates causes.
In order to make flawless epitaxial loayer at silicon substrate, Chinese patent 200610072230.4 proposes a kind of method that forms groove and table top in growth substrates, at first form groove and table top figure in growth substrates, then carry out epitaxial growth, form a chip on each table top, the epitaxial loayer that is formed on the table top does not connect with the epitaxial loayer that is connected channel bottom.Its shortcoming is: form pollution and damage that the technique of groove and table top causes growth substrates, affect the performance of follow-up epitaxially grown epitaxial loayer; The degree of depth of groove increases the cost of etching greater than the thickness of epitaxial loayer; Can not reduce the growth substrates warpage that the temperature difference between two first type surfaces of growth substrates causes; Chip of growth on each table top, the ratio of area that the area of groove accounts for whole growth substrates is large, has reduced ratio defective product, and because epitaxially grown edge effect, the performance that is grown in the epitaxial loayer on the table top reduces.
Therefore, need a kind of new growth substrates that is divided into subregion, the advantage that namely has the growth substrates that is divided into subregion, having again growth substrates does not have contaminated and damage and the advantages such as warpage that reduce growth substrates so that be divided into the growth substrates of subregion become can volume production product.
Summary of the invention
The purpose of this invention is to provide a kind of growth substrates that is divided into subregion, to reduce the growth substrates warpage, improve the phenomenon of the temperature field nonunf ormity of growth substrates inside, thereby make the performance of the chip on the same epitaxial wafer even, and improve the performance of chip, therefore, so that this a kind of growth substrates that is divided into subregion can be applied in enormous quantities, cheaply production.
The invention provides a kind of new growth substrates that is divided into subregion, namely, by the upper groove that forms of the first first type surface (end face) that is etched in growth substrates, and the bottom surface at groove forms oxide cover layer or nitride cap, groove is divided at least two sub regions to growth substrates, carries out at last the glossing process of growth substrates manufacturing process.Second first type surface (bottom surface) of growth substrates contacts graphite plate when epitaxial growth.
Principle and the advantage of the growth substrates of manufacturing are like this,
The glossing process of (1) carrying out at last eliminated when growth substrates forms groove and forms oxide cover layer or nitride cap, cause to the pollution on the surface of subregion with to the damage of the crystal on the surface of subregion, therefore, the performance of the epitaxial loayer of subsequent growth is guaranteed and improves, thereby can volume production.
(2) conductive coefficient of oxide cover layer or nitride cap (comprises the gallium nitride growth substrates much smaller than growth substrates, sapphire growth substrate, the silicon growth substrate, the growth of graphite substrate, the aluminium oxide ceramics growth substrates, the aluminium nitride ceramics growth substrates, the zinc oxide growth substrate) conductive coefficient, so that the temperature difference of the bottom surface of the bottom surface of groove and growth substrates is less than the temperature difference of the bottom surface of the end face of subregion and subregion, the near small part of the end face of the warpage strength that the end face of every sub regions and the temperature difference between the bottom surface cause and adjacent subregion and the warpage strength that the temperature difference between the bottom surface causes is offset.
(3) compare with whole growth substrates, the size of every sub regions is smaller, therefore, because the warpage degree of the end face of every sub regions and every sub regions that the temperature difference between the bottom surface causes is less.
(4) epitaxial loayer on every sub regions is cancelled out each other to stretching or the squeezing action of the growth substrates below it to the epitaxial loayer on the stretching of the growth substrates below it or squeezing action and the adjacent subregion.
(5) compare with whole growth substrates, the size of every sub regions is smaller, therefore, because the warpage degree of every sub regions that the mismatch of the thermal expansion factor of the epitaxial loayer of every sub regions and growth substrates causes is less.
Therefore, above-mentioned principle and advantage not only improve the performance of the chip of diverse location on the epitaxial wafer, and so that the warpage degree of growth substrates reduction in epitaxial process improves the uniformity of the temperature field distribution of growth substrates inside; Improve the uniformity of the temperature field distribution of growth substrates inside, reduced the stress in the epitaxial loayer, and then improved the uniformity of chip performance, reach the uniformity that improves the performance of the chip of diverse location on the epitaxial wafer, improve the yields of producing in enormous quantities.
Following description is applicable to all embodiments of the present invention.
(1) a kind of growth substrates that is divided into subregion comprises: growth substrates, the first first type surface of growth substrates has groove, has oxide cover layer or nitride cap in groove, the bottom surface of oxide cover layer or nitride cap covering groove.
(2) groove is separated at least two sub regions to growth substrates, and in every sub regions, the first first type surface of growth substrates exposes, and epitaxial loayer is not grown in the bottom surface of groove.
(3) subregion comprises edge subregion and center subregion, and a limit of edge subregion is not connected with other subregions, but the edge of growth substrates.All limits of center subregion are connected with other subregions.
(4) oxide cover layer or nitride cap comprise, silicon dioxide cover layer, silicon nitride cover layer.
(5) width of groove is more than or equal to the thickness of the epitaxial loayer of the subsequent growth of 2 times expectation.
(6) shape of subregion comprises, polygon, circle, annular, irregularly shaped, irregular annular shape, and polygon, circle, annular, irregular shape, irregular annular combination.The polygon-shaped of subregion comprises, triangle, square, rectangle, parallelogram, pentagon, hexagon, octagon, etc.The combination of the shape of subregion comprises, at least two identical shaped subregions, perhaps, at least two not identical shaped subregions.
(7) plan view shape of groove comprises, rectilinear form, circular shape, curve shape, irregularly shaped, and rectilinear form, circular shape, curve shape, erose combination.The rectilinear form groove comprises, the straight line parallel with flat limit, becomes the oblique lines of the angle of the non-zero degree of non-90 degree with the vertical straight line in flat limit, with flat limit.
(8) plan view shape of groove is comprised of at least one following element, element comprises: the straight line parallel with flat limit, become oblique line, circular arc, the curves of the angle of the non-zero degree of non-90 degree with the vertical straight line in flat limit, with flat limit, and the vertical element parallel with flat limit, become the combination of the non-90 oblique line elements of spending the angle of non-zero degree, circular arc element, curve element with the vertical vertical element in flat limit, with flat limit.The combination of the plan view shape of groove comprises, the groove of at least two identical plan view shapes, perhaps, the individual at least not groove of identical plan view shape.
(9) circular groove is comprised of a plurality of end to end circular shape grooves.
(10) the polygon groove is comprised of a plurality of end to end rectilinear form grooves.
(11) any oblique line shape groove, circular shape groove, curve shape groove, irregularly shaped groove can replace with a plurality of short rectilinear form grooves that are parallel to flat limit 2 and a plurality of short rectilinear form groove perpendicular to flat limit 2.An embodiment: the length of side that the length of the short rectilinear form groove that is parallel to flat limit 2 equals the limit that is parallel to flat limit 2 of a chip of estimating follow-up manufacturing adds the width of Cutting Road, and the length of side perpendicular to the limit on flat limit 2 that the length of short rectilinear form groove perpendicular to flat limit 2 equals same chip adds the width of Cutting Road.
(12) growth substrates further comprises the edge groove, and the marginal ditch groove is formed on the edge of the circumference of growth substrates.The plan view shape of edge groove comprises circular and irregularly shaped.
(13) form oxide cover layer or nitride cap in the edge groove, oxide cover layer or nitride cap cover the bottom surface of edge groove.
(14) growth substrates comprises, gallium nitride growth substrates (GaN), growth of silicon carbide substrate (SiC), sapphire growth substrate, silicon growth substrate (Si), growth of graphite substrate, aluminium oxide ceramics growth substrates, aluminium nitride ceramics growth substrates, glass growth substrates, gallium oxide growth substrates, zinc oxide growth substrate.
(15) make an embodiment of the method for the growth substrates be divided into subregion: carry out first the cutting technique step, again carry out the wear down processing step, then form groove and oxide cover layer or nitride cap processing step, carry out the glossing step at last.
(16) make an embodiment of the method for the growth substrates be divided into subregion: carry out first the cutting technique step, again form groove and oxide cover layer or nitride cap processing step, then carry out the wear down processing step, carry out the glossing step at last.
(17) region growing technology of the present invention can be applied to the epitaxial growth of LED industry, also can be applied to the epitaxial growth of other industry, for example, laser, Si semiconductor, etc.
Description of drawings
Fig. 1 a and Fig. 1 b show respectively the embodiment of the structure of growth substrates formerly.
Fig. 2 a to Fig. 2 t shows respectively vertical view and the sectional view of the embodiment of the growth substrates with difform groove and difform subregion of the present invention.
Fig. 3 a to Fig. 3 c shows the sectional view of an embodiment of the cross sectional shape of groove on the growth substrates of the present invention and manufacturing process.
Fig. 4 a and Fig. 4 c show the sectional view of an embodiment of the cross sectional shape of groove on the growth substrates of the present invention and manufacturing process.
Fig. 5 a and Fig. 5 c show the sectional view of an embodiment of the cross sectional shape of groove on the growth substrates of the present invention and manufacturing process.
The implication of the numerical chracter representative among the figure is as follows:
1 expression growth substrates,
101a and 101b represent two adjacent traps,
The trap wall that 102 expressions separate two adjacent traps,
103a and 103b represent that two epitaxial loayers in the adjacent subarea territory act on the power on the trap wall,
104 expression epitaxial loayers,
105 expression grooves,
106 expressions are grown in the epitaxial loayer in the groove,
107 expression table tops,
108 expressions are grown in the epitaxial loayer on the table top,
The difform subregion of 111 to 133 expressions,
The flat limit (flat) of 2 expression growth substrates,
The cross section of 3 expression grooves,
The difform groove of 311 to 318 expressions,
41 expressions are formed on oxide cover layer or the nitride cap on first first type surface of subregion of growth substrates,
42 expressions are formed on oxide cover layer or the nitride cap on the sidewall of groove,
43 expressions are formed on oxide cover layer or the nitride cap of the bottom of groove.
Embodiment
For the purpose, technical scheme and the advantage that make embodiment of the present invention clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment among the present invention, those of ordinary skills belong to the scope of protection of the invention not making the every other embodiment that obtains under the creative work prerequisite.
Note, below in all embodiments, one deck oxide cover layer or nitride cap are arranged at the bottom of the groove on the growth substrates, and two kinds of situations are arranged: the surface of (1) oxide cover layer or nitride cap is equal with the first first type surface of growth substrates; (2) the first first type surface of the surface ratio growth substrates of oxide cover layer or nitride cap is low, thereby forms a shallow trench.No matter be which kind of situation, all substantially the same for follow-up epitaxially grown impact, therefore, in the following description, be referred to as groove, do not distinguished.
Fig. 1 a shows an embodiment of the structure of growth substrates formerly.Form trap in growth substrates 1, show adjacent two trap 101a and 101b among the figure, middlely separated by trap wall 102.Epitaxial loayer is at first grown in trap, then, grows into and covers whole growth substrates.Epitaxial loayer in trap 101a and 101b is cancelled out each other to effect 103a and the 103b of growth substrates 1.
Its shortcoming is: (1) is caused in the process that forms trap the pollution on growth substrates surface and damage is not eliminated; (2) this well structure can not be eliminated the warpage of the growth substrates that the temperature difference on the upper and lower surface of growth substrates itself causes.(3) epitaxial loayer above trap and trap wall still exists the effect of growth substrates 1.(4) inhomogeneities of epitaxial wafer is still larger, not can manufacture.
Fig. 1 b shows an embodiment of the structure of growth substrates formerly.Growth substrates 1 form apart from one another by groove 105 and table top 107.The degree of depth of groove 105 is greater than the thickness of the epitaxial loayer of subsequent growth.Epitaxial loayer 106 is grown in groove 105.Epitaxial loayer 108 is in table top 107 growths.Epitaxial loayer in the groove does not link to each other mutually with epitaxial loayer on the table top.Advantage is: solved in the epitaxial process crack problem of silicon substrate.
Its shortcoming is: (1) is caused in the process that forms groove 105 and table top 107 pollution on growth substrates surface and damage is not eliminated fully; (2) this structure can not be eliminated the warpage of the growth substrates that the temperature difference on the upper and lower surface of growth substrates itself causes; (3) edge effect is so that the reduction of epitaxial loayer performance.(4) inhomogeneities of epitaxial wafer is still larger, and therefore, the yields of production in enormous quantities is lower.
Fig. 2 a shows the vertical view of an embodiment of the growth substrates that is divided into subregion by groove of the present invention.Growth substrates 1 has flat limit 2 (flat), form 2 groove 311 and 2 grooves 312 perpendicular to the rectilinear form on flat limit 2 that are parallel to the rectilinear form on flat limit 2 on the first first type surface of growth substrates 1, groove 311 and 312 is separated into 9 sub regions to growth substrates 1: 8 erose edge subregions 112 and 1 square or tetragonal center subregion 111.
The AA sectional view of the embodiment of Fig. 2 b exploded view 2a.Form groove 3 on the first first type surface of growth substrates 1, and in groove, form oxide cover layer or nitride cap 43.
An embodiment: the first first type surface of the upper surface of oxide cover layer or nitride cap 43 and the subregion of growth substrates is in same plane.
An embodiment: the upper surface of oxide cover layer or nitride cap 43 is lower than the first first type surface of the subregion of growth substrates.
Fig. 2 c shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.Growth substrates 1 has flat limit 2, form groove 311 and the groove 312 perpendicular to the rectilinear form on flat limit 2 that is parallel to the rectilinear form on flat limit 2 on the first first type surface of growth substrates 1, mutually perpendicular groove 311 and 312 is separated into 4 erose edge subregions 113 to growth substrates 1.
An embodiment: growth substrates has the groove more than two rectilinear forms.
Fig. 2 d shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.A circular groove 313 is divided into growth substrates 1 edge subregion 114 and the circular center subregion 115 of a toroidal.
Attention: a circular groove is comprised of a plurality of end to end circular shape grooves.
Fig. 2 e shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.Two circular groove 313a and 313b are divided into the center subregion 116 of the edge subregion 114 of a toroidal, a toroidal and the center subregion 115 of a circle to growth substrates 1.
An embodiment: growth substrates has the circular groove more than two.
Fig. 2 f shows an embodiment vertical view that is divided into the growth substrates of subregion by groove.An octagon groove 314 is divided into growth substrates 1 the center subregion 118 of an erose edge subregion 117 and an octagonal shape.Octagon groove 314 is joined end to end by two grooves that are parallel to the groove of the rectilinear form on flat limit 2, two grooves perpendicular to the rectilinear form on flat limit 2, four oblique line shapes and forms.
Fig. 2 g shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.Irregularly shaped groove 315 is divided into an erose edge subregion 119 and an erose center subregion 120 to growth substrates 1.Groove 315 by two rectilinear form groove 315e that are parallel to flat limit 2 and 315f, two perpendicular to the rectilinear form groove 315g on flat limit 2 and 315h, two oblique line shape groove 315a and 315b and respectively a plurality of short rectilinear form groove 315ds that are parallel to flat limit 2 and a plurality of short rectilinear form groove 315c perpendicular to flat limit 2 be made of corresponding with two oblique line limit 315a and 315b.
Attention: any oblique line shape groove, circular shape groove, curve shape groove can replace with a plurality of short rectilinear form grooves that are parallel to flat limit 2 and a plurality of short rectilinear form groove perpendicular to flat limit 2.
Fig. 2 h shows an embodiment vertical view that is divided into the growth substrates of subregion by groove.Two octagon groove 314a and 314b are divided into an erose edge subregion 117, an irregular annular center subregion 121 and an octagonal center subregion 118 to growth substrates 1.Two limits of each of octagon groove 314a and 314b are parallel to respectively flat limit 2.
An embodiment: a growth substrates has more than two octagon grooves.
Fig. 2 i shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.Hexagon groove 316 is divided into growth substrates 1 the center subregion 123 of an erose edge subregion 122 and a hexagon shape.Two limits of hexagon groove 316 are parallel to flat limit 2.
Fig. 2 j shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.Two hexagon groove 316a and 316b are divided into an erose edge subregion 122, an irregular annular center subregion 124 and hexagonal center subregion 123 to growth substrates 1.Two limits of each of hexagon groove 316a and 316b are parallel to respectively flat limit 2.
The hexagon groove can be thought the combination of rectilinear form groove and oblique line shape groove.
An embodiment: a growth substrates has more than two hexagon grooves.
Fig. 2 k shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.Quadrangle groove 317 is divided into growth substrates 1 the center subregion 126 of an erose edge subregion 125 and a quadrangle shape.Two limits of quadrangle groove 317 are parallel to flat limit 2.
Fig. 2 m shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.Two quadrangle groove 317a and 317b are divided into an erose edge subregion 125, an irregular annular center subregion 127 and a tetragonal center subregion 126 to growth substrates 1.Two limits of each of quadrangle groove 317a and 317b are parallel to respectively flat limit 2.
The quadrangle groove can be thought the combination of rectilinear form groove.
An embodiment: a growth substrates has more than two quadrangle grooves.
Fig. 2 n shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.A circular groove 313, two groove 311 and 2 center subregion 111 and eight erose center subregions 128 that growth substrates 1 are divided into the edge subregion 114 of a toroidal, a quadrangle shape perpendicular to the groove 312 of the rectilinear form on flat limit 2 that are parallel to the rectilinear form on flat limit 2.Fig. 2 n shows the combination of the groove of circular groove and rectilinear form, and wherein, circular groove can be thought the combination of a plurality of end to end circular shape grooves.
Fig. 2 p shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.An octagon groove 314, two groove 311 and 2 grooves 312 perpendicular to the rectilinear form on flat limit 2 that are parallel to the rectilinear form on flat limit 2 are divided into the center subregion 111 of an erose edge subregion 117, five quadrangle shapes and the center subregion 129 of four triangles to growth substrates 1.Fig. 2 p shows the combination of octagon groove and rectilinear form groove, and wherein, the octagon groove can be thought the combination of rectilinear form groove and oblique line shape groove.
Fig. 2 q shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.An octagon groove 314 and a circular groove 313 are divided into the center subregion 118 of the edge subregion 114 of a toroidal, an octagonal shape and the center subregion 130 of an irregular annular to growth substrates 1.Two limits of octagon groove 314 are parallel to flat limit 2.Fig. 2 q shows the combination of octagon groove and circular groove, and wherein, the octagon groove can be thought the combination of rectilinear form groove and oblique line shape groove, and circular groove can be thought the combination of a plurality of end to end circular shape grooves.
Fig. 2 r shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.The groove 315a of an octagon groove 314, two oblique line shapes and 315b, a circular groove 313 are divided into the center subregion 115 of a circle, two erose center subregions 132 and two erose edge subregions 131 to growth substrates 1.Two limits of octagon groove 314 are parallel to flat limit 2.Fig. 2 r shows the combination of octagon groove, oblique line shape groove and circular groove, and wherein, the octagon groove can be thought the combination of rectilinear form groove and oblique line shape groove, and circular groove can be thought the combination of a plurality of end to end circular shape grooves.
Fig. 2 s shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.Circular groove 313 and two unconnected circular shape groove 318a and 318b are divided into the edge subregion 114 of an annular, an erose center subregion 133 to growth substrates 1.Fig. 2 s shows the combination of circular groove and circular shape groove, and wherein, circular groove can be thought the combination of a plurality of end to end circular shape grooves.
Attention: the combination of the plan view shape of groove also comprises rectilinear form, circular shape, curve shape, erose other combinations, is not limited to the above-mentioned embodiment of enumerating.
Fig. 2 t shows the vertical view of an embodiment that is divided into the growth substrates of subregion by groove.A circular groove 313 is divided into the edge subregion 114 of an annular and the center subregion 115 of a toroidal to growth substrates 1.Form the edge groove on the edge of growth substrates 1, the edge groove is comprised of arc groove 318 and straight-line groove 311.
An embodiment: the broken edge groove is to be joined end to end, formed around the edge of growth substrates by the short groove perpendicular to the rectilinear form on flat limit 2 of the groove of many short rectilinear forms that are parallel to flat limit 2 and many.
Fig. 3 a to Fig. 3 c shows the sectional view of an embodiment of the cross sectional shape of groove on the growth substrates of the present invention and manufacturing process.Fig. 3 a shows, forms groove 3 in growth substrates 1, forms oxide cover layer or nitride cap, the bottom of cover layer 43 covering grooves 3, and the sidewall of cover layer 42 covering grooves 3, cover layer 41 covers the first first type surface of subregion.Fig. 3 b displaying, by wet method or dry etching, the cover layer 41 on the first first type surface of removal subregion, the top of cover layer 43 is lower than the first first type surface of subregion.Fig. 3 c shows, by wear down, then carry out the glossing step, perhaps directly carry out the glossing step, so that the first first type surface of subregion reaches the thickness of the BB line among Fig. 3 a and Fig. 3 b, the top of cover layer 43 is lower than the first first type surface of subregion, forms a shallow trench.
Fig. 4 a to Fig. 4 c shows the sectional view of an embodiment of the cross sectional shape of groove on the growth substrates of the present invention and manufacturing process.Fig. 4 a shows, forms groove 3 in growth substrates 1, forms oxide cover layer or nitride cap, the bottom of cover layer 43 covering grooves 3, and the sidewall of cover layer 42 covering grooves 3, cover layer 41 covers the first first type surface of subregion.Fig. 4 b displaying, by wet method or dry etching, the cover layer 41 on the first first type surface of removal subregion, the top of cover layer 43 is lower than the first first type surface of subregion.Fig. 4 c shows, by wear down, then carry out the glossing step, perhaps directly carries out the glossing step, so that the first first type surface of subregion reaches the thickness of the BB line among Fig. 4 a, the first first type surface of the top of cover layer 43 and subregion is in same plane.
The sectional view of an embodiment of the cross sectional shape of groove and manufacturing process on Fig. 5 a to Fig. 5 c displaying growth substrates of the present invention.Fig. 5 a shows, forms groove 3 in growth substrates 1, forms oxide cover layer or nitride cap, the bottom of cover layer 43 covering grooves 3, and cover layer 41 covers the first first type surface of subregion.Fig. 5 b displaying, by wet method or dry etching, the cover layer 41 on the first first type surface of removal subregion, the top of cover layer 43 is higher than the first first type surface of subregion.Fig. 5 c shows, by wear down, then carry out glossing, perhaps directly carries out glossing, so that the first first type surface of subregion reaches the thickness of the BB line among Fig. 5 a, the first first type surface of the top of cover layer 43 and subregion is in same plane.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to aforementioned embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned embodiment is put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of each embodiment technical scheme of the present invention.
Claims (11)
1. growth substrates that is divided into subregion, comprise: growth substrates, the first first type surface of described growth substrates has groove, in described groove, have oxide cover layer or nitride cap, described oxide cover layer or nitride cap cover the bottom surface of described groove, described groove is separated at least two sub regions to described growth substrates, and at each described subregion, the first first type surface of described growth substrates exposes.
2. according to claim 1 the growth substrates that is divided into subregion is characterized in that described oxide cover layer or nitride cap comprise, silicon dioxide cover layer, silicon nitride cover layer.
3. according to claim 1 the growth substrates that is divided into subregion is characterized in that the width of described groove is more than or equal to the thickness of the epitaxial loayer of the subsequent growth of 2 times expectation.
4. according to claim 1 the growth substrates that is divided into subregion, it is characterized in that, the shape of described subregion comprises, polygon, circle, annular, irregularly shaped, irregular annular shape, and described polygon, described circle, described annular, described irregular shape, described irregular annular combination.
5. according to claim 4 the growth substrates that is divided into subregion is characterized in that the polygon-shaped of described subregion comprises, triangle, square, rectangle, parallelogram, pentagon, hexagon, octagon.
6. according to claim 1 the growth substrates that is divided into subregion, it is characterized in that, the plan view shape of described groove comprises, rectilinear form, circular shape, curve shape, irregularly shaped, and described rectilinear form, described circular shape, described curve shape, described erose combination; The combination of the plan view shape of described groove comprises, at least two identical shaped described grooves, perhaps, at least two not identical shaped described grooves.
7. according to claim 5 the growth substrates that is divided into subregion is characterized in that described growth substrates has a flat limit; The plan view shape of described groove is comprised of at least one following element, described element comprises: the straight line parallel with described flat limit, become oblique line, circular arc, the curves of the angle of the non-zero degree of non-90 degree with the vertical straight line in described flat limit, with described flat limit, and the combination of the vertical straight line in parallel straight line, described and described flat limit, described and described flat limit, described oblique line, described circular arc, described curve.
8. according to claim 1 the growth substrates that is divided into subregion is characterized in that described growth substrates further comprises the edge groove, and described marginal ditch groove is formed on the edge of the circumference of described growth substrates; Have oxide cover layer or nitride cap in the described edge groove, oxide cover layer or nitride cap cover the bottom surface of edge groove.
9. according to claim 8 the growth substrates that is divided into subregion is characterized in that the plan view shape of described edge groove comprises, the combination of circular shape and rectilinear form, irregularly shaped.
10. according to claim 1 the growth substrates that is divided into subregion, it is characterized in that, described growth substrates comprises, gallium nitride growth substrates, growth of silicon carbide substrate, sapphire growth substrate, silicon growth substrate, growth of graphite substrate, aluminium oxide ceramics growth substrates, aluminium nitride ceramics growth substrates, glass growth substrates, gallium oxide growth substrates, zinc oxide growth substrate.
11. the growth substrates that is divided into subregion according to claim 1, it is characterized in that, the method of making the growth substrates that is divided into subregion of claim 1 is to select from one group of manufacture method, one group of manufacture method comprises, (1) carry out first the cutting technique step, again carry out the wear down processing step, then form groove and oxide cover layer or nitride cap processing step, carry out the glossing step at last; (2) carry out first the cutting technique step, again form groove and oxide cover layer or nitride cap processing step, then carry out the wear down processing step, carry out the glossing step at last.
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| CN104009135A (en) * | 2014-06-11 | 2014-08-27 | 海迪科（南通）光电科技有限公司 | Novel array LED high-voltage chip and manufacturing method thereof |
| CN105304768A (en) * | 2014-05-30 | 2016-02-03 | 严敏 | Method and application for direct epitaxial growth of multicolor LED (light emitting diode) on laminated circuit board |
| CN107177831A (en) * | 2016-03-10 | 2017-09-19 | 英飞凌科技股份有限公司 | The method for reducing defect in epitaxial layer |
| CN108281528A (en) * | 2013-03-18 | 2018-07-13 | 晶元光电股份有限公司 | Light-emitting component |
| CN111719136A (en) * | 2019-03-21 | 2020-09-29 | 中微半导体设备(上海)股份有限公司 | Substrate for MOCVD and method for growing buffer layer on substrate |
| WO2020237767A1 (en) * | 2019-05-24 | 2020-12-03 | 康佳集团股份有限公司 | Patterned substrate, epitaxial wafer, manufacturing method, storage medium and led chip |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108281528A (en) * | 2013-03-18 | 2018-07-13 | 晶元光电股份有限公司 | Light-emitting component |
| CN105304768A (en) * | 2014-05-30 | 2016-02-03 | 严敏 | Method and application for direct epitaxial growth of multicolor LED (light emitting diode) on laminated circuit board |
| CN105304768B (en) * | 2014-05-30 | 2017-12-19 | 无锡极目科技有限公司 | Direct epitaxy grows multi-colored led method and application on laminated circuit board |
| CN104009135A (en) * | 2014-06-11 | 2014-08-27 | 海迪科（南通）光电科技有限公司 | Novel array LED high-voltage chip and manufacturing method thereof |
| CN107177831A (en) * | 2016-03-10 | 2017-09-19 | 英飞凌科技股份有限公司 | The method for reducing defect in epitaxial layer |
| DE102017104863B4 (en) | 2016-03-10 | 2023-11-16 | Infineon Technologies Ag | Method for reducing defects in an epitaxial layer |
| CN111719136A (en) * | 2019-03-21 | 2020-09-29 | 中微半导体设备(上海)股份有限公司 | Substrate for MOCVD and method for growing buffer layer on substrate |
| WO2020237767A1 (en) * | 2019-05-24 | 2020-12-03 | 康佳集团股份有限公司 | Patterned substrate, epitaxial wafer, manufacturing method, storage medium and led chip |
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