TWI697664B - 透過雷射結晶設備的雲紋量化系統及透過雷射結晶設備的雲紋量化方法 - Google Patents

透過雷射結晶設備的雲紋量化系統及透過雷射結晶設備的雲紋量化方法 Download PDF

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TWI697664B
TWI697664B TW105115037A TW105115037A TWI697664B TW I697664 B TWI697664 B TW I697664B TW 105115037 A TW105115037 A TW 105115037A TW 105115037 A TW105115037 A TW 105115037A TW I697664 B TWI697664 B TW I697664B
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TW105115037A
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TW201730549A (zh
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蘇二彬
趙珉煐
趙相熙
金賢中
金成桓
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南韓商Ａｐ***股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Laser Beam Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW105115037A 2015-06-09 2016-05-16 透過雷射結晶設備的雲紋量化系統及透過雷射結晶設備的雲紋量化方法 TWI697664B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150081433A KR101939058B1 (ko) 2015-06-09 2015-06-09 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 레이저 결정화 설비에 기인하는 무라 정량화 방법
KR10-2015-0081433 2015-06-09

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TW201730549A TW201730549A (zh) 2017-09-01
TWI697664B true TWI697664B (zh) 2020-07-01

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JP (1) JP2017005252A (ko)
KR (1) KR101939058B1 (ko)
CN (1) CN106252259A (ko)
TW (1) TWI697664B (ko)

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Publication number Priority date Publication date Assignee Title
CN106706641B (zh) * 2016-12-30 2020-08-04 武汉华星光电技术有限公司 一种多晶硅薄膜的质量检测方法和***
KR102516486B1 (ko) * 2017-12-05 2023-04-03 삼성디스플레이 주식회사 레이저 결정화 장치
CN110993491B (zh) * 2019-12-19 2023-09-26 信利(仁寿)高端显示科技有限公司 一种准分子激光退火制程oed的自动校正方法
KR20230144825A (ko) 2022-04-08 2023-10-17 공주대학교 산학협력단 레이저 어닐 공정의 기판 결정 상태 모니터링 시스템

Citations (4)

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JP2000031229A (ja) * 1998-07-14 2000-01-28 Toshiba Corp 半導体薄膜の検査方法及びそれを用いた半導体薄膜の製造方法
JP2004311992A (ja) * 2003-03-26 2004-11-04 Semiconductor Energy Lab Co Ltd 評価方法、半導体装置及びその作製方法
KR20070115064A (ko) * 2006-05-30 2007-12-05 (주) 인텍플러스 광학식 검사 방법
TW201505070A (zh) * 2013-07-10 2015-02-01 Samsung Display Co Ltd 執行雷射結晶之方法

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JP2722540B2 (ja) * 1988-10-25 1998-03-04 松下電器産業株式会社 厚膜印刷パターンの外観検査方法
JPH0618956U (ja) * 1992-08-21 1994-03-11 オリンパス光学工業株式会社 外観検査用斜照明装置
US5640237A (en) * 1995-08-29 1997-06-17 Kla Instruments Corporation Method and apparatus for detecting non-uniformities in reflective surafaces
JP4566374B2 (ja) * 2000-09-22 2010-10-20 イビデン株式会社 画像処理検査方法
KR100570268B1 (ko) 2003-11-28 2006-04-11 주식회사 쓰리비 시스템 특징점 강도를 이용한 플랫패널용 광관련판요소의 부정형성 얼룩 검출방법
JP2009064944A (ja) * 2007-09-06 2009-03-26 Sony Corp レーザアニール方法、レーザアニール装置および表示装置の製造方法
KR101490830B1 (ko) * 2011-02-23 2015-02-06 가부시끼가이샤 니혼 세이꼬쇼 박막의 표면 검사 방법 및 검사 장치
CN104465345A (zh) * 2014-12-29 2015-03-25 深圳市华星光电技术有限公司 激光结晶***及其晶化能量控制方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031229A (ja) * 1998-07-14 2000-01-28 Toshiba Corp 半導体薄膜の検査方法及びそれを用いた半導体薄膜の製造方法
JP2004311992A (ja) * 2003-03-26 2004-11-04 Semiconductor Energy Lab Co Ltd 評価方法、半導体装置及びその作製方法
KR20070115064A (ko) * 2006-05-30 2007-12-05 (주) 인텍플러스 광학식 검사 방법
TW201505070A (zh) * 2013-07-10 2015-02-01 Samsung Display Co Ltd 執行雷射結晶之方法

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CN106252259A (zh) 2016-12-21
KR101939058B1 (ko) 2019-01-17
TW201730549A (zh) 2017-09-01
KR20160145249A (ko) 2016-12-20
JP2017005252A (ja) 2017-01-05

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