TWI697663B - 透過使用紫外線之雷射結晶設備的雲紋量化系統及透過使用紫外線之雷射結晶設備的雲紋量化方法 - Google Patents

透過使用紫外線之雷射結晶設備的雲紋量化系統及透過使用紫外線之雷射結晶設備的雲紋量化方法 Download PDF

Info

Publication number
TWI697663B
TWI697663B TW105115035A TW105115035A TWI697663B TW I697663 B TWI697663 B TW I697663B TW 105115035 A TW105115035 A TW 105115035A TW 105115035 A TW105115035 A TW 105115035A TW I697663 B TWI697663 B TW I697663B
Authority
TW
Taiwan
Prior art keywords
image
moiré
substrate
crystallized
light source
Prior art date
Application number
TW105115035A
Other languages
English (en)
Chinese (zh)
Other versions
TW201704737A (zh
Inventor
朴憲旭
趙相熙
蘇二彬
金賢中
梁相熙
Original Assignee
南韓商Ａｐ***股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 南韓商Ａｐ***股份有限公司 filed Critical 南韓商Ａｐ***股份有限公司
Publication of TW201704737A publication Critical patent/TW201704737A/zh
Application granted granted Critical
Publication of TWI697663B publication Critical patent/TWI697663B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Signal Processing (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW105115035A 2015-05-29 2016-05-16 透過使用紫外線之雷射結晶設備的雲紋量化系統及透過使用紫外線之雷射結晶設備的雲紋量化方法 TWI697663B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2015-0076580 2015-05-29
KR1020150076580A KR101877274B1 (ko) 2015-05-29 2015-05-29 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 자외선 광원을 이용한 레이저 결정화 설비에 기인하는 무라 정량화 방법

Publications (2)

Publication Number Publication Date
TW201704737A TW201704737A (zh) 2017-02-01
TWI697663B true TWI697663B (zh) 2020-07-01

Family

ID=57453327

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105115035A TWI697663B (zh) 2015-05-29 2016-05-16 透過使用紫外線之雷射結晶設備的雲紋量化系統及透過使用紫外線之雷射結晶設備的雲紋量化方法

Country Status (4)

Country Link
JP (1) JP6779037B2 (ja)
KR (1) KR101877274B1 (ja)
CN (1) CN106206372B (ja)
TW (1) TWI697663B (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110993491B (zh) * 2019-12-19 2023-09-26 信利(仁寿)高端显示科技有限公司 一种准分子激光退火制程oed的自动校正方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031229A (ja) * 1998-07-14 2000-01-28 Toshiba Corp 半導体薄膜の検査方法及びそれを用いた半導体薄膜の製造方法
JP2004311992A (ja) * 2003-03-26 2004-11-04 Semiconductor Energy Lab Co Ltd 評価方法、半導体装置及びその作製方法
WO2013190040A1 (en) * 2012-06-22 2013-12-27 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for excimer laser annealing process

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100278977B1 (ko) * 1997-08-30 2001-02-01 구본준 레이저 장비
KR100570268B1 (ko) 2003-11-28 2006-04-11 주식회사 쓰리비 시스템 특징점 강도를 이용한 플랫패널용 광관련판요소의 부정형성 얼룩 검출방법
US7728256B2 (en) * 2003-12-24 2010-06-01 Lg Display Co., Ltd. Silicon crystallization apparatus and silicon crystallization method thereof
JP4537131B2 (ja) * 2004-06-30 2010-09-01 友達光電股▲ふん▼有限公司 レーザー結晶シリコンの検査方法及びその装置
JP2012119512A (ja) * 2010-12-01 2012-06-21 Hitachi High-Technologies Corp 基板の品質評価方法及びその装置
KR102032961B1 (ko) * 2012-10-31 2019-10-17 삼성디스플레이 주식회사 실리콘 기판 결정화 방법
CN103219229B (zh) * 2013-03-28 2016-04-27 昆山维信诺显示技术有限公司 Ela不均匀性的量化判断方法及其反馈***
KR20150010392A (ko) * 2013-07-19 2015-01-28 케이맥(주) 결정화된 실리콘의 검사 방법 및 장치
CN104465345A (zh) * 2014-12-29 2015-03-25 深圳市华星光电技术有限公司 激光结晶***及其晶化能量控制方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031229A (ja) * 1998-07-14 2000-01-28 Toshiba Corp 半導体薄膜の検査方法及びそれを用いた半導体薄膜の製造方法
JP2004311992A (ja) * 2003-03-26 2004-11-04 Semiconductor Energy Lab Co Ltd 評価方法、半導体装置及びその作製方法
WO2013190040A1 (en) * 2012-06-22 2013-12-27 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for excimer laser annealing process

Also Published As

Publication number Publication date
CN106206372B (zh) 2021-06-15
JP6779037B2 (ja) 2020-11-04
KR20160141303A (ko) 2016-12-08
JP2016225626A (ja) 2016-12-28
KR101877274B1 (ko) 2018-07-12
CN106206372A (zh) 2016-12-07
TW201704737A (zh) 2017-02-01

Similar Documents

Publication Publication Date Title
US8411264B2 (en) Method and apparatus for inspecting defects
US11043433B2 (en) Method of inspecting surface and method of manufacturing semiconductor device
KR101606093B1 (ko) 기판 결함 검사장치 및 방법
JP2012119512A (ja) 基板の品質評価方法及びその装置
TWI697664B (zh) 透過雷射結晶設備的雲紋量化系統及透過雷射結晶設備的雲紋量化方法
JP2011014928A (ja) 半導体装置の製造方法および半導体検査装置
JP5119602B2 (ja) 周期性パターンの欠陥検査方法及び欠陥検査装置
TWI695164B (zh) 寬頻晶圓缺陷偵測系統及寬頻晶圓缺陷偵測方法
US9255893B2 (en) Apparatus for illuminating substrates in order to image micro cracks, pinholes and inclusions in monocrystalline and polycrystalline substrates and method therefore
KR101569853B1 (ko) 기판 결함 검사 장치 및 방법
TWI697663B (zh) 透過使用紫外線之雷射結晶設備的雲紋量化系統及透過使用紫外線之雷射結晶設備的雲紋量化方法
US20090002687A1 (en) Focus determination for laser-mask imaging systems
KR100714751B1 (ko) 자동 웨이퍼 검사 시스템
KR101600128B1 (ko) 편광 이미징
JP7074202B2 (ja) 化成処理膜検査方法、化成処理膜検査装置、表面処理鋼板の製造方法、表面処理鋼板の品質管理方法及び表面処理鋼板の製造設備
JP2019219295A (ja) ウエハ検査装置およびウエハ検査方法
TWI692614B (zh) 膜厚測定裝置、基板檢查裝置、膜厚測定方法及基板檢查方法
WO2024100849A1 (ja) エージング条件の評価装置及び設定方法
WO2019244637A1 (ja) ウエハ検査装置およびウエハ検査方法
KR100478482B1 (ko) 웨이퍼 검사장치
KR20220112078A (ko) 결함 검사 장치 및 이를 이용한 결함 검사 방법
KR20050002471A (ko) 반도체 소자의 검사방법
JP2007256271A (ja) 異物検査方法及び異物検査装置
JP2005072313A (ja) 結晶膜の検査方法および検査装置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees