TWI697265B

TWI697265B - High-speed electroplating method

Info

Publication number: TWI697265B
Application number: TW107127821A
Authority: TW
Inventors: 何政恩; 黃保欽; 吳宇堃; 楊政憲
Original assignee: 元智大學
Priority date: 2018-08-09
Filing date: 2018-08-09
Publication date: 2020-06-21
Also published as: TW202010370A; US20200048786A1

Abstract

A high-speed electroplating method is provided, wherein a substrate or a component is disposed in a plating solution vibrated by ultrasonic waves to achieve high-speed electrodeposition with uniform microstructure

Description

高速電鍍方法High speed plating method

本發明涉及一種電鍍方法，特別是超音波高速電鍍方法。 The invention relates to an electroplating method, especially a high-speed ultrasonic electroplating method.

近年來，各種電子產品的設計日漸趨於薄、輕及多功能化，使得印刷電路板需藉由提高配線層的配線密度或者將配線層堆疊成多層的方式提高印刷電路板的密度。 In recent years, the design of various electronic products has gradually become thinner, lighter and more versatile, making the printed circuit board need to increase the density of the printed circuit board by increasing the wiring density of the wiring layer or stacking the wiring layers into multiple layers.

在堆疊配線層以形成多層式印刷電路板的設計中，每一配線層之間於接點處需相互連接以產生電氣導通，而為了達成互連導通之目的，可透過一些製造方式，例如：以雷射鑽孔或機械鑽孔方式在互連部位形成導通孔，再利用填充電鍍方法在導通孔上形成可電氣導通的電鍍層，或者以電鍍製程在某一配線層的互連部位產生實心導電柱，再透過銲接方式連接另一配線層。 In the design of stacking wiring layers to form a multilayer printed circuit board, each wiring layer needs to be connected to each other at the contact point to produce electrical conduction, and in order to achieve the purpose of interconnection and conduction, some manufacturing methods can be adopted, such as: Form a via hole in the interconnection part by laser drilling or mechanical drilling, and then use a filling plating method to form an electrically conductive plating layer on the via hole, or generate a solid in the interconnection part of a wiring layer by an electroplating process The conductive post is connected to another wiring layer by soldering.

現今，在印刷電路板上進行電鍍製程，主要利用低電流密度(例如：0.5~3A/dm²)進行電鍍，但存在有電鍍時間較久的問題。有鑑於此，便有提高電流密度以進行電鍍的概念(即高速電鍍)被提出，其主要目的是縮短電鍍時間。然而，高速電鍍所生成的金屬沉積物的微結構會有均勻度的問題，例如：晶粒大小不均勻。請參閱「第1圖」，「第1圖」為習知高速電鍍生成的銅柱之掃描式電子顯微鏡影像，從圖式中可知高速電鍍所生成的銅柱存在有晶粒大小不均勻的問題。此外，高速電鍍生成的金屬沉積物於其上層會出現較小晶粒，較小的晶粒代表具有更多的晶界，且晶界會包裹雜質，晶界數量變多也就代表包括更多的雜質，從而降低導通界面的特性。 At present, the plating process on the printed circuit board mainly uses low current density (for example: 0.5~3A/dm ² ) for plating, but there is a problem that the plating time is longer. In view of this, the concept of increasing current density for electroplating (ie high-speed electroplating) has been proposed, and its main purpose is to shorten the electroplating time. However, the microstructure of the metal deposits generated by high-speed electroplating has uniformity issues, such as uneven grain size. Please refer to "Picture 1". "Picture 1" is a scanning electron microscope image of copper pillars formed by conventional high-speed electroplating. It can be seen from the figure that the copper pillars generated by high-speed electroplating have the problem of uneven grain size . In addition, the metal deposits generated by high-speed electroplating will have smaller grains on the upper layer. The smaller grains represent more grain boundaries, and the grain boundaries will wrap impurities, and the increase in the number of grain boundaries means more. Impurities, thereby reducing the characteristics of the conduction interface.

綜上所述，可知先前技術中存在高速電鍍所生成的微結構不均勻問題，因此實有必要提出改進的技術手段，來解決此一問題。 To sum up, it can be known that there is a problem of uneven microstructure generated by high-speed electroplating in the prior art, so it is necessary to propose improved technical means to solve this problem.

本發明揭露一種高速電鍍方法。 The invention discloses a high-speed electroplating method.

首先，本發明揭露一種高速電鍍方法，其步驟包括：提供基板，基板表面具有待鍍層；將乾膜光阻覆蓋於待鍍層上，並將乾膜光阻圖案化；對基板以預處理程序進行清洗；配置基板於具有金屬離子的電鍍液中；開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍程序；於未有乾膜光阻覆蓋的待鍍層上形成金屬導電柱；以及去除覆蓋於待鍍層上的乾膜光阻。 First, the present invention discloses a high-speed electroplating method. The steps include: providing a substrate with a layer to be plated on the surface of the substrate; covering the layer to be plated with a dry film photoresist and patterning the dry film photoresist; performing a pretreatment process on the substrate Cleaning; configure the substrate in a plating solution with metal ions; turn on the ultrasonic oscillation device to oscillate the plating solution, and perform the pre-plating process with a current density of 0.5~5A/dm ² through the power supply device, and then with a current density of 6~ 100A/dm ² for high-speed electroplating; forming metal conductive pillars on the layer to be plated that is not covered by the dry film photoresist; and removing the dry film photoresist covering the layer to be plated.

此外，本發明揭露另一種高速電鍍方法，其步驟包括：提供基板；透過雷射鑽孔製程或機械鑽孔製程於基板形成盲孔或通孔結構；於基板的表面與盲孔或通孔結構的孔壁形成待鍍層；對基板以預處理程序進行清洗；配置基板於具有金屬離子的電鍍液中；以及開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填孔程序於盲孔或通孔結構內填充金屬導電材料，從而形成導電孔。 In addition, the present invention discloses another high-speed electroplating method. The steps include: providing a substrate; forming a blind hole or through hole structure on the substrate through a laser drilling process or a mechanical drilling process; and forming a blind hole or through hole structure on the surface of the substrate The wall of the hole is to be plated; the substrate is pre-cleaned; the substrate is placed in an electroplating solution with metal ions; and the ultrasonic oscillation device is turned on to oscillate the electroplating solution, and the current density is 0.5~5A through the power supply device. /dm ² for the pre-plating process, and then the high-speed electroplating hole filling process with a current density of 6~100A/dm ^{2 is} used to fill the blind hole or through-hole structure with a metal conductive material to form a conductive hole.

再者，本發明揭露又一種高速電鍍方法，其步驟包括：提供元件，元件具有金屬縫隙結構；對元件以預處理程序進行清洗；配置元件於具有金屬離子的電鍍液中；以及開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填充程序於金屬縫隙結構內填充金屬導電材料，從而使金屬縫隙結構金屬化。 Furthermore, the present invention discloses another high-speed electroplating method, the steps of which include: providing a component with a metal gap structure; cleaning the component with a pretreatment procedure; disposing the component in a plating solution with metal ions; and turning on ultrasonic oscillation The device oscillates the electroplating solution, and performs the pre-plating process with the current density of 0.5~5A/dm ² through the power supply device, and then performs the high-speed plating filling process with the current density of 6~100A/dm ² to fill the metal gap structure with metal conduction Material, thereby metallizing the metal gap structure.

本發明所揭露之系統與方法如上，與先前技術的差異在於本發明是藉由將基板或元件配置於超音波震盪的電鍍液中以進行高電流密度電鍍。 The system and method disclosed in the present invention are as above, and the difference from the prior art is that the present invention performs high current density electroplating by arranging the substrate or device in the ultrasonic oscillating plating solution.

透過上述的技術手段，本發明可以提供均勻化之金屬沉積物。 Through the above technical means, the present invention can provide a uniform metal deposit.

10:超音波震盪裝置 10: Ultrasonic vibration device

20:電源供應裝置 20: Power supply device

30:電鍍液 30: Plating solution

40:噴流裝置 40: Jet device

50:金屬導電柱 50: metal conductive column

60:乾膜光阻 60: Dry film photoresist

70:盲孔結構 70: blind hole structure

72:底銅 72: bottom copper

75:盲孔導電孔 75: blind hole conductive hole

76:金屬件 76: Metal parts

80:通孔結構 80: through-hole structure

82:通孔導電孔 82: through hole conductive hole

85:待鍍層 85: to be coated

90:金屬縫隙結構 90: Metal gap structure

200、300:基板 200, 300: substrate

400:元件 400: component

210:待鍍層 210: to be coated

D:厚度 D: thickness

Q:高度 Q: height

步驟110:提供基板，基板表面具有待鍍層 Step 110: Provide a substrate with a layer to be plated on the surface of the substrate

步驟120:將乾膜光阻覆蓋於待鍍層上，並將乾膜光阻圖案化 Step 120: Cover the dry film photoresist on the layer to be plated, and pattern the dry film photoresist

步驟130:對基板以預處理程序進行清洗 Step 130: Clean the substrate with a pretreatment procedure

步驟140:配置基板於具有金屬離子的電鍍液中 Step 140: Configure the substrate in the plating solution with metal ions

步驟150:開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍程序 Step 150: Turn on the ultrasonic oscillating device to oscillate the plating solution, and perform the pre-plating process with the current density of 0.5~5A/dm ² through the power supply device, and then perform the high-speed plating process with the current density of 6~100A/dm ²

步驟160:於未有乾膜光阻覆蓋的待鍍層上形成金屬導電柱 Step 160: Form a metal conductive pillar on the layer to be plated that is not covered by the dry film photoresist

步驟170:去除覆蓋於待鍍層上的乾膜光阻 Step 170: Remove the dry film photoresist covering the layer to be plated

步驟350:開啟超音波震盪裝置震盪電鍍液，開啟噴流裝置攪拌電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍程序 Step 350: Turn on the ultrasonic oscillating device to oscillate the electroplating solution, turn on the jet device to stir the electroplating solution, and perform the pre-plating process with the current density of 0.5~5A/dm ² through the power supply device, and then with the current density of 6~100A/dm ² Perform high-speed plating process

步驟410:提供基板 Step 410: provide a substrate

步驟420:透過雷射鑽孔製程或機械鑽孔製程於基板形成盲孔或通孔結構 Step 420: forming a blind hole or through hole structure in the substrate through a laser drilling process or a mechanical drilling process

步驟430:於基板的表面與盲孔或通孔結構的孔壁形成待鍍層 Step 430: Form a layer to be plated on the surface of the substrate and the hole wall of the blind hole or through hole structure

步驟440:對基板以預處理程序進行清洗 Step 440: Clean the substrate with a pretreatment procedure

步驟450:配置基板於具有金屬離子的電鍍液中 Step 450: Configure the substrate in the plating solution with metal ions

步驟460:開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100 A/dm²進行高速電鍍填孔程序於盲孔或通孔結構內填充金屬導電材料，從而形成導電孔 Step 460: Turn on the ultrasonic oscillating device to oscillate the electroplating solution, and perform the pre-plating process with a current density of 0.5~5A/dm ² through the power supply device, and then perform high-speed electroplating and hole filling with a current density of 6~100 A/dm ² The process of filling metal conductive material in the blind hole or through hole structure to form a conductive hole

步驟560:開啟超音波震盪裝置震盪電鍍液，開啟噴流裝置攪拌電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填孔程序於盲孔或通孔結構內填充金屬導電材料，從而形成導電孔 Step 560: Turn on the ultrasonic oscillating device to oscillate the electroplating solution, turn on the jet device to stir the electroplating solution, and perform the pre-plating process with a current density of 0.5~5A/dm ² through the power supply device, and then with a current density of 6~100A/dm ² Perform high-speed electroplating hole filling procedure to fill the blind hole or through-hole structure with metal conductive material to form a conductive hole

步驟610:提供元件，元件具有金屬縫隙結構 Step 610: Provide an element, the element has a metal gap structure

步驟620:對元件以預處理程序進行清洗 Step 620: Clean the components with a pretreatment procedure

步驟630:配置元件於具有金屬離子的電鍍液中 Step 630: Configure the element in a plating solution with metal ions

步驟640:開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填充程序於金屬縫隙結構內填充金屬導電材料，從而使金屬縫隙結構金屬化 Step 640: Turn on the ultrasonic oscillating device to oscillate the plating solution, and perform the pre-plating process with the current density of 0.5~5A/dm ² through the power supply device, and then perform the high-speed plating filling process with the current density of 6~100A/dm ² The metal gap structure is filled with a metal conductive material, thereby metalizing the metal gap structure

步驟740:開啟超音波震盪裝置震盪電鍍液，開啟噴流裝置攪拌電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填充程序於金屬縫隙結構內填充金屬導電材料，從而使金屬縫隙結構金屬化 Step 740: Turn on the ultrasonic oscillating device to oscillate the electroplating solution, turn on the jet device to stir the electroplating solution, and perform the pre-plating process with a current density of 0.5~5A/dm ² through the power supply device, and then with a current density of 6~100A/dm ^2. Carry out high-speed electroplating and filling procedures to fill the metal gap structure with metal conductive materials, thereby metalizing the metal gap structure

第1圖為習知高速電鍍生成的銅柱之掃描式電子顯微鏡影像。 Figure 1 is a scanning electron microscope image of copper columns generated by conventional high-speed electroplating.

第2圖為本發明高速電鍍方法之第一實施例方法流程圖。 Figure 2 is a flow chart of the first embodiment of the high-speed electroplating method of the present invention.

第3A圖為應用第2圖的高速電鍍方法的步驟110之一實施例示意圖。 FIG. 3A is a schematic diagram of an embodiment of step 110 in which the high-speed plating method of FIG. 2 is applied.

第3B圖為應用第2圖的高速電鍍方法的步驟120之一實施例示意圖。 FIG. 3B is a schematic diagram of an embodiment of step 120 applying the high-speed plating method of FIG. 2.

第3C圖為應用第2圖的高速電鍍方法的步驟140與步驟150之一實施例示意圖。 FIG. 3C is a schematic diagram of an embodiment of steps 140 and 150 of the high-speed plating method of FIG. 2.

第3D圖為應用第2圖的高速電鍍方法的步驟160之一實施例示意圖。 FIG. 3D is a schematic diagram of an embodiment of step 160 using the high-speed plating method of FIG. 2.

第3E圖為應用第2圖的高速電鍍方法的步驟170之一實施例示意圖。 FIG. 3E is a schematic diagram of an embodiment of step 170 in which the high-speed plating method of FIG. 2 is applied.

第4A圖為第3B圖的第一實施例俯視示意圖。 FIG. 4A is a schematic top view of the first embodiment of FIG. 3B.

第4B圖為第3B圖的第二實施例俯視示意圖。 FIG. 4B is a schematic top view of the second embodiment of FIG. 3B.

第5圖為本發明高速電鍍方法之第二實施例方法流程圖。 FIG. 5 is a flow chart of the second embodiment of the high-speed electroplating method of the present invention.

第6圖為應用第5圖的高速電鍍方法的步驟140與步驟350之一實施例示意圖。 FIG. 6 is a schematic diagram of an embodiment of steps 140 and 350 of the high-speed plating method of FIG. 5.

第7A圖為利用第2圖之高速電鍍方法所生成的銅柱之一實施例掃描式電子顯微鏡影像。 FIG. 7A is a scanning electron microscope image of an embodiment of a copper pillar generated by the high-speed electroplating method shown in FIG. 2.

第7B圖為利用第5圖之高速電鍍方法所生成的銅柱之一實施例掃描式電子顯微鏡影像。 FIG. 7B is a scanning electron microscope image of an embodiment of a copper pillar generated by the high-speed plating method of FIG. 5.

第8圖為本發明高速電鍍方法之第三實施例方法流程圖。 FIG. 8 is a flowchart of a third embodiment of the high-speed electroplating method of the present invention.

第9A圖為第8圖的步驟420的盲孔結構之一實施例示意圖。 FIG. 9A is a schematic diagram of an embodiment of the blind hole structure in step 420 of FIG. 8.

第9B圖為第8圖的步驟420的通孔結構之一實施例示意圖。 FIG. 9B is a schematic diagram of an embodiment of the via structure in step 420 of FIG. 8.

第10A圖為第8圖的步驟460的盲孔結構形成盲孔導電孔之一實施例示意圖。 FIG. 10A is a schematic diagram of an embodiment in which the blind via structure of step 460 in FIG. 8 forms a blind via conductive hole.

第10B圖為第8圖的步驟460的通孔結構形成通孔導電孔之一實施例示意圖。 FIG. 10B is a schematic diagram of an embodiment of forming a via conductive hole in the via structure of step 460 in FIG. 8.

第11圖為本發明高速電鍍方法之第四實施例方法流程圖。 FIG. 11 is a flowchart of a fourth embodiment of the high-speed electroplating method of the present invention.

第12圖為本發明高速電鍍方法之第五實施例方法流程圖。 FIG. 12 is a method flowchart of a fifth embodiment of the high-speed electroplating method of the present invention.

第13A圖為第12圖的步驟610的金屬縫隙結構之一實施例示意圖。 FIG. 13A is a schematic diagram of an embodiment of the metal slit structure in step 610 of FIG. 12.

第13B圖為第12圖的步驟640的金屬縫隙結構金屬化之一實施例示意圖。 FIG. 13B is a schematic diagram of an embodiment of the metallization of the metal gap structure in step 640 of FIG. 12.

第14圖為本發明高速電鍍方法之第六實施例方法流程圖。 FIG. 14 is a flowchart of a sixth embodiment of the high-speed electroplating method of the present invention.

以下將配合圖式及實施例來詳細說明本發明之實施方式，藉此對本發明如何應用技術手段來解決技術問題並達成技術功效的實現過程能充分理解並據以實施。 The embodiments of the present invention will be described in detail below in conjunction with the drawings and examples, so as to fully understand and implement the implementation process of how the present invention uses technical means to solve technical problems and achieve technical effects.

請先參閱「第2圖」與「第3A圖」至「第3E圖」，「第2圖」為本發明高速電鍍方法之第一實施例方法流程圖，「第3A圖」至「第3E圖」為應用「第2圖」的高速電鍍方法的步驟110、步驟120、步驟140與步驟150、步驟160、步驟170之一實施例示意圖。在本實施例中，高速電鍍方法的步驟包括：提供基板，基板表面具有待鍍層(步驟110)；將乾膜光阻覆蓋於待鍍層上，並將乾膜光阻圖案化(步驟120)；對基板以預處理程序進行清洗(步驟130)；配置基板於具有金屬離子的電鍍液中(步驟140)；開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍程序(步驟150)；於未有乾膜光阻覆蓋的待鍍層上形成金屬導電柱(步驟160)；以及去除覆蓋於待鍍層上的乾膜光阻(步驟170)。 Please refer to "Picture 2" and "Picture 3A" to "Picture 3E", "Picture 2" is the flow chart of the first embodiment of the high-speed electroplating method of the present invention, "Picture 3A" to "Plot 3E" FIG. 1 is a schematic diagram of an embodiment of steps 110, 120, 140, 150, 160, and 170 of the high-speed electroplating method of FIG. 2. In this embodiment, the steps of the high-speed electroplating method include: providing a substrate with a layer to be plated on the surface of the substrate (step 110); covering the dry film photoresist on the layer to be plated and patterning the dry film photoresist (step 120); The substrate is cleaned with a pretreatment procedure (step 130); the substrate is placed in a plating solution with metal ions (step 140); the ultrasonic oscillation device is turned on to oscillate the plating solution, and the current density is first 0.5~5A through the power supply device /dm ² for the pre-plating process, followed by a high-speed electroplating process with a current density of 6 to 100 A/dm ² (step 150); forming a metal conductive post on the layer to be plated that is not covered by the dry film photoresist (step 160); and The dry film photoresist covering the layer to be plated is removed (step 170).

請參閱「第2圖」與「第3A圖」，在步驟110中，基板200的厚度D可為但不限於0.2~1毫米(millimeter，mm)，基板200可為BT基板、FR4基板、銅基板或ABF基板，基板200之材質可為但不限於玻璃纖維、環氧樹脂、聚苯醚樹脂(Polyphenylene Oxide，PPO)、聚醯亞胺(Polyimide，PI)、聚丙烯(Polypropylene，PP)的其中一種或多種混合。在本實施例中，基板200可為但不限於印刷電路板，基板200可於雙面表面上形成待鍍層210，但本實施例並非用以限定本發明，可依據實際需求進行調整。舉例而言，基板200可僅於單面表面上形成待鍍層210。由於基板200為非導體，因此需要在其表面進行無電鍍製程、物理氣相沉積製程或化學氣相沉積製程，使基板200的表面具有導電層(即待鍍層210)，以利後續在待鍍層210上進行電鍍生成金屬導電柱50。其中，待鍍層210的材質可選自於由銀、金、鎳、鈷、鈀與銅所構成的群組，可依據實際需求進行調整。 Please refer to "Figure 2" and "Figure 3A". In step 110, the thickness D of the substrate 200 may be, but not limited to, 0.2-1 mm (millimeter, mm). The substrate 200 may be a BT substrate, FR4 substrate, copper Substrate or ABF substrate, the material of the substrate 200 may be but not limited to glass fiber, epoxy resin, polyphenylene oxide resin (Polyphenylene Oxide (PPO), polyimide (Polyimide, PI), polypropylene (Polypropylene, PP) One or more of them are mixed. In this embodiment, the substrate 200 may be, but not limited to, a printed circuit board. The substrate 200 may form a layer 210 to be plated on the double-sided surface. However, this embodiment is not intended to limit the present invention, and can be adjusted according to actual needs. For example, the substrate 200 may form the layer 210 to be plated on only one surface. Since the substrate 200 is a non-conductor, an electroless plating process, a physical vapor deposition process, or a chemical vapor deposition process needs to be performed on its surface to make the surface of the substrate 200 have a conductive layer (that is, a layer to be plated 210), so as to facilitate subsequent plating on the layer to be plated 210 is electroplated to generate metal conductive pillars 50. Among them, to be The material of the plating layer 210 can be selected from the group consisting of silver, gold, nickel, cobalt, palladium, and copper, and can be adjusted according to actual needs.

請參閱「第2圖」與「第3B圖」，由於要在基板200的待鍍層210上形成金屬導電柱50而非在待鍍層210上鍍金屬膜，因此，在步驟120中，可先透過壓膜機將乾膜光阻60均勻貼附於待鍍層210上，在本實施例中，乾膜光阻60可為負型乾膜光阻，然後依據使用者對於金屬導電柱50的外型(即金屬導電柱50的底面積形狀)需求使用對應形狀的光罩對乾膜光阻60進行曝光顯影製程(即圖案化乾膜光阻60)，使受到感光的乾膜光阻60會發生聚合作用而硬化，未感光的乾膜光阻60則為原來的單體分子而被顯影液所洗掉，而得到忠實於光罩形狀之乾膜影像轉移，建構出所需的金屬導電柱50外型(即金屬導電柱50的底面積形狀)，但本實施例並非用以限定本發明，舉例而言，乾膜光阻60可為正型乾膜光阻，使得對乾膜光阻60進行曝光顯影製程時，受到感光的乾膜光阻60會發生分解作用而被顯影液所洗掉，而得到忠實於光罩形狀之乾膜影像轉移，建構出所需的金屬導電柱50外型(即金屬導電柱50的底面積形狀)。此外，由於金屬導電柱50的高度小於或等於乾膜光阻60貼附於待鍍層210上的高度Q，因此，透過壓膜機將乾膜光阻60均勻貼附於待鍍層210上時，需注意乾膜光阻60均勻貼附於待鍍層210上的高度Q是否符合使用者的需求(即乾膜光阻60均勻貼附於待鍍層210上的高度需大於或等於使用者欲在待鍍層210上電鍍生成金屬導電柱50的高度Q)。 Please refer to "Picture 2" and "Picture 3B". Since the metal conductive pillar 50 is to be formed on the layer 210 to be plated of the substrate 200 instead of plating a metal film on the layer 210 to be plated, in step 120, the first The film laminator evenly attaches the dry film photoresist 60 to the layer 210 to be plated. In this embodiment, the dry film photoresist 60 can be a negative dry film photoresist, and then according to the appearance of the metal conductive pillar 50 by the user (I.e., the shape of the bottom area of the metal conductive pillar 50) It is necessary to use a correspondingly shaped photomask to perform the exposure and development process on the dry film photoresist 60 (ie, patterned dry film photoresist 60), so that the photosensitive dry film photoresist 60 will occur Hardened by polymerization, the unexposed dry film photoresist 60 is the original monomer molecules washed away by the developer, and a dry film image transfer faithful to the shape of the mask is obtained, and the required metal conductive column 50 is constructed The shape (ie, the shape of the bottom area of the metal conductive pillar 50), but this embodiment is not intended to limit the present invention. For example, the dry film photoresist 60 can be a positive dry film photoresist, so that the dry film photoresist 60 During the exposure and development process, the photosensitive dry film photoresist 60 will be decomposed and washed away by the developer, and the dry film image transfer faithful to the shape of the mask will be obtained, and the desired shape of the metal conductive column 50 will be constructed. (That is, the shape of the bottom area of the metal conductive pillar 50). In addition, since the height of the metal conductive pillar 50 is less than or equal to the height Q of the dry film photoresist 60 attached to the layer to be plated 210, when the dry film photoresist 60 is evenly attached to the layer to be plated 210 through a laminator, It should be noted whether the height Q of the dry film photoresist 60 uniformly attached to the layer 210 to be plated meets the user's needs (i.e., the height of the dry film photoresist 60 uniformly attached to the layer 210 to be plated needs to be greater than or equal to the user's desire to be The plating layer 210 is electroplated to generate the height Q of the metal conductive pillar 50.

在本實施例中，預生成的金屬導電柱50可為圓柱，使得預期的金屬導電柱50外型(即金屬導電柱50的底面積形狀)可為圓形(如「第4A圖」所示，「第4A圖」為「第3B圖」的第一實施例俯視示意圖)，圓形直徑可為但不限於120~200微米(Micrometer，μm)，但本實施例並非用以限定本發明，可依據實際需求進行調整，舉例而言，預生成的金屬導電柱50也可為正方柱，使得預期的金屬導電柱50外型(即金屬導電柱50的底面積形狀)可為正方形(如「第4B圖」所示，「第4B圖」為「第3B圖」的第二實施例俯視示意圖)，正方形的邊長可為但不限於120μm~200μm。 In this embodiment, the pre-generated metal conductive pillar 50 may be a cylinder, so that the expected shape of the metal conductive pillar 50 (ie, the shape of the bottom area of the metal conductive pillar 50) may be circular (as shown in "Figure 4A") , "Figure 4A" is a schematic top view of the first embodiment of "Figure 3B", the circular diameter can be but not It is limited to 120-200 microns (Micrometer, μm), but this embodiment is not intended to limit the present invention, and can be adjusted according to actual needs. For example, the pre-generated metal conductive pillar 50 can also be a square pillar, so that the expected metal The shape of the conductive pillar 50 (that is, the shape of the bottom area of the metal conductive pillar 50) may be square (as shown in "Figure 4B", "Figure 4B" is a schematic top view of the second embodiment of "Figure 3B"), square The side length can be but not limited to 120μm~200μm.

請參閱「第2圖」，步驟130所述之預處理程序可包含：依序以水、清潔劑與酸洗液清洗基板200表面的待鍍層210，更詳細地說，預處理程序可清除待鍍層210上的污漬以及去除其表面的氧化層，且為避免清潔過程中有氣泡殘留於待鍍層210上。其中，水可為但不限於去離子水。需注意的是，由於後續進行電鍍，因此，當用以酸洗清潔的酸洗液不包含電鍍液所具有的離子時，為避免影響後續電鍍金屬的品質，可再次以水進行清洗，才可進行後續步驟140至步驟170的程序。 Please refer to "Figure 2", the pre-processing procedure described in step 130 may include: sequentially cleaning the to-be-plated layer 210 on the surface of the substrate 200 with water, detergent, and pickling liquid. In more detail, the pre-processing procedure may remove The stains on the plating layer 210 and the oxide layer on the surface are removed, and in order to avoid air bubbles remaining on the layer to be plated 210 during the cleaning process. Among them, the water may be, but not limited to, deionized water. It should be noted that due to the subsequent electroplating, when the pickling solution used for acid cleaning does not contain the ions contained in the electroplating solution, in order to avoid affecting the quality of the subsequent electroplated metal, it can be cleaned with water again. Follow the procedures from step 140 to step 170.

接著，請參閱「第2圖」、「第3C圖」與「第3D圖」，將經過乾膜光阻曝光顯影製程(即步驟120)與以預處理程序進行清洗(即步驟130)後之具有待鍍層210與圖案化乾膜光阻60的基板200配置於具有金屬離子的電鍍液30中(即步驟140)，開啟超音波震盪裝置10震盪電鍍液30，並透過電源供應裝置20先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍程序(即步驟150)，即進行超音波高速電鍍，而於未有乾膜光阻60覆蓋的待鍍層210上形成金屬導電柱50(即步驟160)。在執行步驟140時，需將具有待鍍層210與圖案化乾膜光阻60的基板200配置於陰極的位置，而陽極的位置可配置有溶解性陽極(即用於補充電鍍液中所消耗的金屬離子)或不溶性陽極(例如：鈦網、銥/鉭氧化物複合陽極)，在本實施例中，陽極的材質可為但不限於銥/鉭氧化物複合不溶性陽極。此外，由於在本實施例中欲進行雙面電鍍，因此，具有待鍍層210與圖案化乾膜光阻60的基板200所配置的位置可位於電鍍槽的中央位置，電鍍槽的兩側可配置有兩個陽極。在本實施例中，電鍍液30中的金屬離子可選自於由銀離子、金離子、鎳離子、鈷離子、鈀離子與銅離子所構成的群組，可依據預計生成的金屬導電柱50之材質進行調整。在進行超音波高速電鍍過程中(即步驟150)，電源供應裝置20可先透過電流密度0.5~5A/dm²進行預鍍，然後再調高電流密度(即電流密度為6~100A/dm²)進行高速電鍍，進而縮短電鍍所需時間。 Next, please refer to "Picture 2", "Picture 3C" and "Picture 3D", after the dry film photoresist exposure development process (ie step 120) and after the pretreatment process cleaning (ie step 130) The substrate 200 with the layer to be plated 210 and the patterned dry film photoresist 60 is disposed in the electroplating solution 30 with metal ions (ie, step 140), the ultrasonic oscillating device 10 is turned on to oscillate the electroplating solution 30, and the power supply device 20 first The current density is 0.5~5A/dm ² for the pre-plating process, and then the current density is 6~100A/dm ² for the high-speed electroplating process (ie step 150), that is, the ultrasonic high-speed electroplating, without the dry film photoresist A metal conductive pillar 50 is formed on the layer 210 to be plated covered by 60 (ie, step 160). When performing step 140, the substrate 200 with the layer to be plated 210 and the patterned dry film photoresist 60 needs to be arranged at the position of the cathode, and the position of the anode can be configured with a soluble anode (that is, used to supplement the consumption of the plating solution Metal ions) or insoluble anodes (for example: titanium mesh, iridium/tantalum oxide composite anode), in this embodiment, the material of the anode may be, but not limited to, iridium/tantalum oxide composite insoluble anode. In addition, since double-sided plating is to be performed in this embodiment, the position of the substrate 200 with the layer to be plated 210 and the patterned dry film photoresist 60 can be located at the center of the plating tank, and both sides of the plating tank can be configured There are two anodes. In this embodiment, the metal ions in the plating solution 30 may be selected from the group consisting of silver ions, gold ions, nickel ions, cobalt ions, palladium ions, and copper ions. Adjust the material. During the high-speed ultrasonic electroplating process (ie step 150), the power supply device 20 can be pre-plated through a current density of 0.5~5A/dm ² and then increase the current density (ie the current density is 6~100A/dm ² ) High-speed electroplating to shorten the time required for electroplating.

由於透過法拉第定律可知

，δ為金屬導電柱50的高度(單位：μm)，j為電流密度(單位：A/dm²)，t為電鍍時間(單位：分鐘)，η為電流效率，M為分子量(單位：g/mol)，z為該金屬的價數(即每一個金屬離子中被轉移的電子數)，F為法拉第常數(即96485C/mol)，ρ為電解液的密度，因此可依據電流密度與預計電鍍生成的金屬導電柱50高度推算出電鍍所需的時間。在本實施例中，預計電鍍生成的金屬導電柱50的高度可為130μm~200μm，舉例而言，預計電鍍生成的金屬導電柱50可為銅柱，其高度可為168μm時，透過上述法拉第定律可知其對應的公式為δ=0.22×j×t，因此可先透過電流密度為3A/dm²進行預鍍約15分鐘，以生成10μm的銅柱；再透過電流密度為5A/dm²進行電鍍約9分鐘，以生成10μm的銅柱(此時，銅柱的高度為20μm)；接著再透過電流密度為12A/dm²進行電鍍約56分鐘，以生成148μm的銅柱(此時，銅柱的高度為168μm)。 As we know through Faraday's law

, Δ is the height of the metal conductive column 50 (unit: μm), j is the current density (unit: A/dm ² ), t is the plating time (unit: minute), η is the current efficiency, M is the molecular weight (unit: g /mol), z is the valence of the metal (ie, the number of electrons transferred in each metal ion), F is the Faraday constant (ie, 96485C/mol), and ρ is the density of the electrolyte, so it can be based on the current density and prediction The metal conductive column 50 generated by electroplating highly estimates the time required for electroplating. In this embodiment, the height of the metal conductive pillar 50 generated by electroplating may be 130 μm~200 μm. For example, when the metal conductive pillar 50 generated by electroplating is expected to be a copper pillar, the height of which may be 168 μm. It can be seen that the corresponding formula is δ = 0.22 × j × t , so the current density can be pre-plated for about 15 minutes through 3A/dm ² to generate a 10μm copper pillar; then the current density can be plated through 5A/dm ² Approximately 9 minutes to generate 10 μm copper pillars (in this case, the height of the copper pillars is 20 μm); then conduct electroplating for approximately 56 minutes through a current density of 12 A/dm ² to generate 148 μm copper pillars (in this case, the copper pillars The height is 168μm).

此外，在本實施例中，超音波震動的頻率可為但不限於5~100千赫茲(Kilo Hertz，KHz)，電鍍液30除了包含銅離子以外還可包含溶劑(例如：水與硫酸)與添加劑(例如：光澤劑、運載劑、整平劑、潤濕劑以及氯離子)。 In addition, in this embodiment, the frequency of ultrasonic vibration may be, but not limited to, 5 to 100 kilohertz (Kilo Hertz, KHz). In addition to copper ions, the plating solution 30 may also include solvents (eg, water and sulfuric acid) and Additives (for example: gloss agent, carrier agent, leveling agent, wetting agent and chloride ion).

接著，請參閱「第2圖」與「第3E圖」，依據電流密度與其對應的電鍍時間得到預計高度的金屬導電柱50後，可利用四氫呋喃(THF)或氫氧化鈉(NaOH)去除覆蓋於待鍍層210上之圖案化乾膜光阻60，而顯露出電鍍生成的金屬導電柱50。 Next, please refer to "Picture 2" and "Picture 3E", after obtaining the metal conductive column 50 of the expected height according to the current density and the corresponding plating time, you can use tetrahydrofuran (THF) or sodium hydroxide (NaOH) to remove the cover The patterned dry film photoresist 60 on the layer to be plated 210 exposes the metal conductive pillar 50 generated by electroplating.

此外，由於當電鍍液30的溫度低於25℃時，電鍍生成電鍍層的成長過慢，而當電鍍液30的溫度高於30℃時，則易產生添加劑不穩定的狀況，因此，在本實施例中，高速電鍍方法還可包含：透過溫控裝置控制電鍍液的溫度為25~30℃(未繪製)。 In addition, when the temperature of the plating solution 30 is lower than 25°C, the growth of the plating layer generated by electroplating is too slow, and when the temperature of the plating solution 30 is higher than 30°C, the situation of additive instability is likely to occur. In an embodiment, the high-speed electroplating method may further include: controlling the temperature of the electroplating solution to 25-30°C through a temperature control device (not shown).

請參閱「第5圖」，「第5圖」為本發明高速電鍍方法之第二實施例方法流程圖，高速電鍍方法的步驟可包括：提供基板，基板表面具有待鍍層(步驟110)；將乾膜光阻覆蓋於待鍍層上，並將乾膜光阻圖案化(步驟120)；對基板以預處理程序進行清洗(步驟130)；配置基板於具有金屬離子的電鍍液中(步驟140)；開啟超音波震盪裝置震盪電鍍液，開啟噴流裝置攪拌電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍程序(步驟350)；於未有乾膜光阻覆蓋的待鍍層上形成金屬導電柱(步驟160)；以及去除覆蓋於待鍍層上的乾膜光阻(步驟170)。 Please refer to "Figure 5", which is a flowchart of the second embodiment of the high-speed electroplating method of the present invention. The steps of the high-speed electroplating method may include: providing a substrate with a layer to be plated on the surface of the substrate (step 110); The dry film photoresist is overlaid on the layer to be plated, and the dry film photoresist is patterned (step 120); the substrate is cleaned with a pretreatment procedure (step 130); the substrate is placed in a plating solution with metal ions (step 140) ; Turn on the ultrasonic oscillating device to oscillate the electroplating solution, turn on the jet device to stir the electroplating solution, and conduct the pre-plating process with the current density of 0.5~5A/dm ² through the power supply device, and then with the current density of 6~100A/dm ² High-speed electroplating process (step 350); forming metal conductive pillars on the layer to be plated not covered by the dry film photoresist (step 160); and removing the dry film photoresist covered on the layer to be plated (step 170).

換句話說，本實施例與上一實施例的差異在於本實施例的高速電鍍方法還可包含：開啟噴流裝置40攪拌電鍍液30(如「第6圖」所示，「第6圖」為應用「第5圖」的高速電鍍方法的步驟140與步驟350之一實施例示意圖)，以提升電鍍液30的流動性及良好的攪拌效果。其中，噴流裝置40的噴流量可為但不限小於或等於每分鐘10公升。 In other words, the difference between this embodiment and the previous embodiment is that the high-speed plating method of this embodiment may further include: turning on the jet device 40 to stir the plating solution 30 (as shown in "Figure 6", "Figure 6" It is a schematic diagram of an embodiment of steps 140 and 350 of the high-speed electroplating method of "Figure 5" to improve the fluidity of the plating solution 30 and a good stirring effect. The jet flow rate of the jet flow device 40 may be, but not limited to, less than or equal to 10 liters per minute.

以下請參閱「第7A圖」與「第7B圖」，「第7A圖」為利用「第2圖」之高速電鍍方法所生成的銅柱之一實施例掃描式電子顯微鏡影像，「第7B圖」為利用「第5圖」之高速電鍍方法所生成的銅柱之一實施例掃描式電子顯微鏡影像。 Please refer to "Figure 7A" and "Figure 7B" below. "Figure 7A" is a scanning electron microscope image of an example of a copper column generated by the high-speed electroplating method of "Figure 2". "Figure 7B" "Is a scanning electron microscope image of one embodiment of a copper column generated by the high-speed electroplating method of "Figure 5."

由「第7A圖」可知，利用「第2圖」之高速電鍍方法所生成的銅柱其晶粒大小較為均勻，解決了習知高速電鍍生成的銅柱具有晶粒大小不均勻且其上層區域會出現較小晶粒之問題。由於超音波的空化作用(cavitation)，可以使電鍍液更充分的進入孔(即圖案化乾膜光阻與待鍍層所形成的凹槽)內，即時補充銅離子與添加劑等，使孔內傳質增強，所以利用「第2圖」之高速電鍍方法所生成的銅柱其晶粒大小較為均勻。而由「第7B圖」可知，利用「第5圖」之高速電鍍方法所生成的銅柱除了晶粒大小較為均勻之外，還解決了利用「第2圖」之高速電鍍方法所生成的銅柱所具有的頸縮(necking)之問題，進而提升整體銅柱的機械特性。 It can be seen from "Figure 7A" that the copper pillars generated by the high-speed plating method of "Figure 2" have a relatively uniform grain size, which solves the problem that the copper pillars generated by the conventional high-speed plating have uneven grain size and the upper region There will be problems with smaller grains. Due to the cavitation of ultrasound, the plating solution can be more fully entered into the hole (ie, the groove formed by the patterned dry film photoresist and the layer to be plated), and copper ions and additives can be replenished in real time to make the hole pass through. The quality is enhanced, so the grain size of the copper pillars generated by the high-speed electroplating method of "Figure 2" is relatively uniform. It can be seen from "Picture 7B" that the copper pillars generated by the high-speed plating method of "Picture 5" not only have a relatively uniform grain size, but also solve the copper generated by the high-speed plating method of "Picture 2" The problem of the necking (necking) of the column, thereby improving the mechanical properties of the overall copper column.

此外，透過奈米壓痕儀(nanoindenter)對利用「第5圖」之高速電鍍方法所生成的銅柱(如「第7B圖」所示)與「第1圖」之習知高速電鍍生成的銅柱進行一系列的壓痕測試，利用「第5圖」之高速電鍍方法所生成的銅柱的硬度(hardness)可約為2.0GPa至2.2GPa，楊氏模數(Young’s modulus)可約為98.9GPa至105.6GPa，剛性(stiffness)可約為2.48×10⁵N/m至2.61×10⁵N/m，而習知高速電鍍生成的銅柱的硬度可約為1.6GPa至1.7GPa，楊氏模數可約為91.8GPa至 104.6GPa，剛性可約為2.16×10⁵N/m至2.57×10⁵N/m，因此，可知利用「第5圖」之高速電鍍方法所生成的銅柱之機械特性高於習知高速電鍍生成的銅柱之機械特性。 In addition, through a nanoindenter, the copper pillars generated by the high-speed plating method of "Figure 5" (as shown in "Figure 7B") and the conventional high-speed plating of "Figure 1" are generated Conduct a series of indentation tests on the copper pillars. The hardness of the copper pillars generated by the high-speed electroplating method of "Figure 5" can be about 2.0GPa to 2.2GPa, and the Young's modulus can be about 98.9GPa to 105.6GPa, the stiffness can be about 2.48×10 ⁵ N/m to 2.61×10 ⁵ N/m, and the hardness of copper pillars produced by conventional high-speed electroplating can be about 1.6GPa to 1.7GPa, Yang The modulus can be about 91.8GPa to 104.6GPa, and the rigidity can be about 2.16×10 ⁵ N/m to 2.57×10 ⁵ N/m. Therefore, it can be seen that the copper pillars generated by the high-speed plating method of "Figure 5" The mechanical properties are higher than those of copper pillars produced by conventional high-speed electroplating.

本發明所述之高速電鍍方法除了上述可用以生成金屬導電柱外，也可應用於填充電鍍盲孔或通孔結構，詳細的說明請參照「第8圖」至「第10B圖」，「第8圖」為本發明高速電鍍方法之第三實施例方法流程圖，「第9A圖」為「第8圖」的步驟420的盲孔結構之一實施例示意圖，「第9B圖」為「第8圖」的步驟420的通孔結構之一實施例示意圖，「第10A圖」為「第8圖」的步驟460的盲孔結構形成盲孔導電孔之一實施例示意圖，「第10B圖」為「第8圖」的步驟460的通孔結構形成通孔導電孔之一實施例示意圖。在本實施例中，高速電鍍方法包括以下步驟：提供基板(步驟410)；透過雷射鑽孔製程或機械鑽孔製程於基板形成盲孔或通孔結構(步驟420)；於基板的表面與盲孔或通孔結構的孔壁形成待鍍層(步驟430)；對基板以預處理程序進行清洗(步驟440)；配置基板於具有金屬離子的電鍍液中(步驟450)；以及開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填孔程序於盲孔或通孔結構內填充金屬導電材料，從而形成導電孔(步驟460)。 The high-speed electroplating method described in the present invention can be used to fill in electroplated blind holes or through-hole structures in addition to the above-mentioned metal conductive pillars. For detailed descriptions, please refer to "Figure 8" to "Figure 10B". "Figure 8" is a flow chart of a third embodiment of the high-speed electroplating method of the present invention, "Figure 9A" is a schematic diagram of an embodiment of the blind hole structure in step 420 of "Figure 8", and "Figure 9B" is "No. "Figure 8" is a schematic diagram of an embodiment of the through-hole structure in step 420. "Figure 10A" is an example diagram of an embodiment of forming a blind via conductive hole in the blind hole structure in step 460 of "Figure 8." A schematic diagram of an embodiment of forming a through-hole conductive hole for the through-hole structure of step 460 in "Figure 8." In this embodiment, the high-speed electroplating method includes the following steps: providing a substrate (step 410); forming a blind hole or through-hole structure on the substrate through a laser drilling process or a mechanical drilling process (step 420); on the surface of the substrate and The wall of the blind hole or through-hole structure forms a layer to be plated (step 430); the substrate is cleaned with a pretreatment procedure (step 440); the substrate is placed in a plating solution with metal ions (step 450); and ultrasonic oscillation is turned on The device oscillates the plating solution, and the pre-plating process is carried out with the current density of 0.5~5A/dm ² through the power supply device, and then the high-speed electroplating hole-filling process with the current density of 6~100A/dm ^{2 is} used in the blind hole or through hole structure The metal conductive material is filled inside to form a conductive hole (step 460).

在步驟410中，基板300的厚度D可為但不限於0.2~3毫米，基板300可為BT基板、FR4基板、銅基板或ABF基板，基板300之材質可為但不限於玻璃纖維、環氧樹脂、PPO、PI、PP的其中一種或多種混合。在本實施例中，基板300可為但不限於印刷電路板。 In step 410, the thickness D of the substrate 300 may be, but not limited to, 0.2-3 mm. The substrate 300 may be a BT substrate, FR4 substrate, copper substrate, or ABF substrate. The material of the substrate 300 may be, but not limited to, glass fiber, epoxy One or more of resin, PPO, PI, PP are mixed. In this embodiment, the substrate 300 may be, but not limited to, a printed circuit board.

在步驟420中，透過雷射鑽孔製程或機械鑽孔製程於基板300形成盲孔結構70(如「第9A圖」所示)或通孔結構80(如「第9B圖」所示)，其中，盲孔結構70或通孔結構80的數量與位置可依據時機需求進行調整。當盲孔結構70為圓形盲孔(即其俯視圖為圓形)時，其孔徑(直徑)可為50μm~200μm，AR值(即縱橫比，基板300的厚度和孔徑的比值)可為0.5~4.0；當通孔結構80為圓形通孔(即其俯視圖為圓形)時，其孔徑(直徑)可為50μm~200μm，AR值可為1.0~20。此外，基板300可具有底銅72，用以導通各個盲孔結構70，底銅72可透過壓合製程或無電鍍製程生成。 In step 420, a blind hole structure 70 (as shown in "Figure 9A") or a through hole structure 80 (as shown in "Figure 9B") is formed on the substrate 300 through a laser drilling process or a mechanical drilling process, The number and position of the blind hole structure 70 or the through hole structure 80 can be adjusted according to timing requirements. When the blind hole structure 70 is a circular blind hole (that is, its top view is circular), its aperture (diameter) may be 50 μm to 200 μm, and the AR value (ie, aspect ratio, ratio of the thickness of the substrate 300 to the aperture) may be 0.5 ~4.0; When the through-hole structure 80 is a circular through-hole (that is, its top view is circular), its aperture (diameter) may be 50 μm~200 μm, and the AR value may be 1.0-20. In addition, the substrate 300 may have a bottom copper 72 for conducting each blind hole structure 70. The bottom copper 72 may be generated through a lamination process or an electroless plating process.

在步驟430中，由於基板300為非導體，因此需先進行無電鍍製程、物理氣相沉積製程或化學氣相沉積製程，使基板300的表面與盲孔結構70或通孔結構80的孔壁具有導電層(即待鍍層85)，以利後續進行填充電鍍生成導電孔。其中，待鍍層85的材質可選自於由銀、金、鎳、鈷、鈀與銅所構成的群組，待鍍層85的厚度可為但不限於1μm。 In step 430, since the substrate 300 is a non-conductor, an electroless plating process, a physical vapor deposition process or a chemical vapor deposition process needs to be performed first to make the surface of the substrate 300 and the hole wall of the blind hole structure 70 or the through hole structure 80 It has a conductive layer (that is, the layer to be plated 85) to facilitate subsequent filling and plating to generate conductive holes. The material of the layer to be plated 85 can be selected from the group consisting of silver, gold, nickel, cobalt, palladium and copper. The thickness of the layer to be plated 85 can be, but not limited to, 1 μm.

在步驟440中，預處理程序可包含：依序以水、清潔劑與酸洗液清洗基板300表面與盲孔結構70或通孔結構80的孔壁之待鍍層85，更詳細地說，預處理程序可清除待鍍層85上的污漬以及去除其表面的氧化層，且為避免清潔過程中有氣泡殘留於待鍍層85上。其中，水可為但不限於去離子水。需注意的是，由於後續進行電鍍，因此，當用以酸洗清潔的酸洗液不包含電鍍液所具有的離子時，為避免影響後續電鍍金屬的品質，可再次以水進行清洗，才可進行後續步驟450至步驟460的程序。 In step 440, the pretreatment process may include: sequentially cleaning the surface of the substrate 300 and the to-be-plated layer 85 of the hole wall of the blind hole structure 70 or the through-hole structure 80 with water, a cleaning agent, and a pickling solution. The processing procedure can remove stains on the layer to be plated 85 and remove the oxide layer on the surface, and to avoid bubbles remaining on the layer to be plated 85 during the cleaning process. Among them, the water may be, but not limited to, deionized water. It should be noted that due to the subsequent electroplating, when the pickling solution used for acid cleaning does not contain the ions contained in the electroplating solution, in order to avoid affecting the quality of the subsequent electroplated metal, it can be cleaned with water again. The subsequent steps 450 to 460 are performed.

將經過步驟410至步驟440後的基板300配置於具有金屬離子的電鍍液中(即步驟450)，開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填孔程序於盲孔結構70或通孔結構80內填充金屬導電材料，從而形成導電孔(即步驟460)。在執行步驟450時，需將基板300配置於陰極的位置，而陽極的位置可配置有溶解性陽極(即用於補充電鍍液中所消耗的金屬離子)或不溶性陽極(例如：鈦網、銥/鉭氧化物複合陽極)，在本實施例中，陽極的材質可為但不限於銥/鉭氧化物複合不溶性陽極，電鍍液中的金屬離子選自於由銀離子、金離子、鎳離子、鈷離子、鈀離子與銅離子所構成的群組，可依據預計生成的導電孔之材質進行調整。在進行超音波高速電鍍過程中(即步驟460)，電源供應裝置可先透過電流密度0.5~5A/dm²進行預鍍，然後再調高電流密度(即電流密度為6~100A/dm²)進行高速填孔電鍍，其中，預鍍與高速填孔電鍍所需的時間可依據實際需求進行調整。 Dispose the substrate 300 after step 410 to step 440 in the electroplating solution with metal ions (ie step 450), turn on the ultrasonic oscillating device to oscillate the electroplating solution, and firstly pass the power supply device with a current density of 0.5~5A/dm ² Perform a pre-plating process, and then perform a high-speed electroplating hole filling process with a current density of 6 to 100 A/dm ² to fill the blind hole structure 70 or the through hole structure 80 with a metal conductive material to form a conductive hole (ie step 460). When performing step 450, the substrate 300 needs to be arranged at the position of the cathode, and the position of the anode can be configured with a soluble anode (that is, used to supplement metal ions consumed in the plating solution) or an insoluble anode (eg, titanium mesh, iridium /Tantalum oxide composite anode), in this embodiment, the material of the anode may be but not limited to iridium/tantalum oxide composite insoluble anode. The metal ions in the plating solution are selected from silver ions, gold ions, nickel ions, The group of cobalt ions, palladium ions and copper ions can be adjusted according to the material of the conductive holes expected to be generated. During the high-speed ultrasonic electroplating process (ie step 460), the power supply device may pre-plate through the current density of 0.5~5A/dm ² and then increase the current density (ie the current density is 6~100A/dm ² ) Perform high-speed hole-filling electroplating, in which the time required for pre-plating and high-speed hole-filling electroplating can be adjusted according to actual needs.

由於超音波的空化作用，可以使電鍍液更充分的進入盲孔結構70或通孔結構80內，即時補充金屬離子與添加劑等，使盲孔結構70或通孔結構80內填充對應該金屬離子的金屬導電材料，從而形成盲孔導電孔75(如「第10A圖」所示)或通孔導電孔82(如「第10B圖」所示)，可避免產生外觀上及結構上之缺陷(例如：孔洞產生及晶粒分佈不均之問題)。 Due to the cavitation effect of ultrasonic waves, the plating solution can be more fully entered into the blind hole structure 70 or the through hole structure 80, and metal ions and additives can be replenished instantly, so that the blind hole structure 70 or the through hole structure 80 is filled with the corresponding metal Ion metal conductive material to form blind hole conductive hole 75 (as shown in "Figure 10A") or through-hole conductive hole 82 (as shown in "Figure 10B"), which can avoid appearance and structural defects (For example: the problem of holes and uneven grain distribution).

此外，請參閱「第11圖」，「第11圖」為本發明高速電鍍方法之第四實施例方法流程圖，高速電鍍方法的步驟可包括：提供基板(步驟410)；透過雷射鑽孔製程或機械鑽孔製程於基板形成盲孔或通孔結構(步驟420)；於基板的表面與盲孔或通孔結構的孔壁形成待鍍層(步驟430)；對基板以預處理程序進行清洗(步驟440)；配置基板於具有金屬離子的電鍍液中(步驟450)；以及開啟超音波震盪裝置震盪電鍍液，開啟噴流裝置攪拌電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填孔程序於盲孔或通孔結構內填充金屬導電材料，從而形成導電孔(步驟560)。 In addition, please refer to "Figure 11", which is a flowchart of the fourth embodiment of the high-speed electroplating method of the present invention. The steps of the high-speed electroplating method may include: providing a substrate (step 410); drilling through a laser Process or mechanical drilling process to form a blind hole or through hole structure on the substrate (step 420); forming a layer to be plated on the surface of the substrate and the hole wall of the blind hole or through hole structure (step 430); cleaning the substrate with a pretreatment procedure (Step 440); dispose the substrate in the electroplating solution with metal ions (step 450); and turn on the ultrasonic oscillating device to oscillate the electroplating solution, turn on the jet device to stir the electroplating solution, and first pass the power supply device with a current density of 0.5~5A /dm ² for the pre-plating process, and then perform a high-speed electroplating hole filling process with a current density of 6-100 A/dm ² to fill the blind hole or the through hole structure with a metal conductive material to form a conductive hole (step 560).

換句話說，本實施例與上一實施例的差異在於本實施例的高速電鍍方法還可包含：開啟噴流裝置攪拌電鍍液，以提升電鍍液的流動性及良好的攪拌效果。其中，噴流裝置的噴流量可為但不限小於或等於每分鐘10公升。 In other words, the difference between this embodiment and the previous embodiment is that the high-speed plating method of this embodiment may further include: turning on the jet device to stir the plating solution to improve the fluidity of the plating solution and a good stirring effect. Wherein, the jet flow rate of the jet flow device may be, but not limited to, less than or equal to 10 liters per minute.

本發明所述之高速電鍍方法除了上述可用以生成金屬導電柱與導電孔以外，還可用以使金屬縫隙結構金屬化(其可應用在三維積體電路(three-dimensional integrated circuits，3D IC)之封裝技術或三維電子構裝中)。透過金屬縫隙金屬化之技術將可直接將微接點之銲料移除，並解決微接點因銲料縮小、老化所導致的危害，同時也可避免易脆之介金屬微接點(IMC joint)產生，以及避免於接點中產生微孔洞(microvoids)，詳細的說明請參照「第12圖」至「第13B圖」，「第12圖」為本發明高速電鍍方法之第五實施例方法流程圖，「第13A圖」為「第12圖」的步驟610的金屬縫隙結構之一實施例示意圖，「第13B圖」為「第12圖」的步驟640的金屬縫隙結構金屬化之一實施例示意圖。在本實施例中，高速電鍍方法包括以下步驟：提供元件，元件具有金屬縫隙結構(步驟610)；對元件以預處理程序進行清洗(步驟620)；配置元件於具有金屬離子的電鍍液中(步驟630)；以及開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填充程序於金屬縫隙結構內填充金屬導電材料，從而使金屬縫隙結構金屬化(步驟640)。 The high-speed electroplating method described in the present invention can be used to metalize the metal gap structure (which can be applied to three-dimensional integrated circuits (3D IC)) in addition to the above-mentioned methods for generating metal conductive pillars and conductive holes (In packaging technology or three-dimensional electronic construction). Through the technology of metal gap metallization, the solder of the micro-contact can be directly removed, and the damage caused by the shrinkage and aging of the micro-contact can be solved, and the brittle intermetallic micro-contact (IMC joint) can also be avoided. To generate and avoid microvoids in the contacts, please refer to "Figure 12" to "Figure 13B" for detailed description. "Figure 12" is the fifth embodiment method of the high-speed electroplating method of the present invention Flowchart, "Figure 13A" is a schematic diagram of one embodiment of the metal slit structure in step 610 of "Figure 12", "Figure 13B" is one of the metallization structures of step 640 in "Figure 12" Example schematic. In this embodiment, the high-speed electroplating method includes the following steps: providing a component with a metal slit structure (step 610); cleaning the component with a pretreatment procedure (step 620); disposing the component in a plating solution with metal ions ( Step 630); and start the ultrasonic oscillating device to oscillate the electroplating solution, and perform the pre-plating process with the current density of 0.5~5A/dm ² through the power supply device, and then perform the high-speed plating filling with the current density of 6~100A/dm ² The process fills the metal gap structure with a metal conductive material, thereby metalizing the metal gap structure (step 640).

在步驟610中，元件400具有兩個以上的金屬件76，金屬縫隙結構90為相鄰兩個金屬件76之間的縫隙結構，金屬縫隙結構90的縫隙間距可為但不限於10μm~100μm，該些金屬件76的材質可選自於由銀、金、鎳、鈷、鈀與銅所構成的群組，該些金屬件76的形狀可為圓形或方形，當該些金屬件為圓形金屬件(即其俯視圖為圓形)時，其直徑可為10μm~200μm；當該些金屬件為方形金屬件(即其俯視圖為方形)時，其長度與/或寬度可為10μm~200μm。 In step 610, the element 400 has more than two metal parts 76, and the metal gap structure 90 is a gap structure between two adjacent metal parts 76. The gap distance of the metal gap structure 90 may be, but not limited to, 10 μm to 100 μm. The materials of the metal parts 76 can be selected from the group consisting of silver, gold, nickel, cobalt, palladium and copper. The shape of the metal parts 76 can be round or square. When the metal parts are round When the metal parts are shaped (that is, the top view is circular), the diameter can be 10μm~200μm; when the metal parts are square metal parts (that is, the top view is square), the length and/or width can be 10μm~200μm .

在步驟620中，預處理程序可包含：依序以水、清潔劑與酸洗液清洗元件400，更詳細地說，預處理程序可清除金屬縫隙結構90上的污漬以及去除其表面的氧化層，且為避免清潔過程中有氣泡殘留於金屬縫隙結構90上。其中，水可為但不限於去離子水。需注意的是，由於後續進行電鍍，因此，當用以酸洗清潔的酸洗液不包含電鍍液所具有的離子時，為避免影響後續電鍍金屬的品質，可再次以水進行清洗，才可進行後續步驟630與步驟640的程序。 In step 620, the pretreatment process may include: sequentially cleaning the component 400 with water, detergent, and pickling liquid. In more detail, the pretreatment process may remove stains on the metal gap structure 90 and remove the oxide layer on the surface In order to avoid air bubbles remaining on the metal gap structure 90 during the cleaning process. Among them, the water may be, but not limited to, deionized water. It should be noted that due to the subsequent electroplating, when the pickling solution used for acid cleaning does not contain the ions contained in the electroplating solution, in order to avoid affecting the quality of the subsequent electroplated metal, it can be cleaned with water again. The subsequent steps 630 and 640 are performed.

將經過步驟610至步驟620後的元件400配置於具有金屬離子的電鍍液中(即步驟630)，開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填充程序於金屬縫隙結構90內填充金屬導電材料，從而使金屬縫隙結構90金屬化(即步驟640)。在執行步驟630時，需將元件400配置於陰極的位置，而陽極的位置可配置有溶解性陽極(即用於補充電鍍液中所消耗的金屬離子)或不溶性陽極(例如：鈦網、銥/鉭氧化物複合陽極)，在本實施例中，陽極的材質可為但不限於銥/鉭氧化物複合不溶性陽極，電鍍液中的金屬離子選自於由銀離子、金離子、鎳離子、鈷離子、鈀離子與銅離子所構成的群組，可依據需求進行調整。在進行高速電鍍過程中(即步驟640)，電源供應裝置可先透過電流密度0.5~5A/dm²進行預鍍，然後再調高電流密度(即電流密度為6~100A/dm²)進行高速填充電鍍，其中，預鍍與高速填充電鍍所需的時間可依據實際需求進行調整。 Dispose the element 400 after step 610 to step 620 in the electroplating solution with metal ions (ie step 630), turn on the ultrasonic oscillation device to oscillate the electroplating solution, and first pass the power supply device with a current density of 0.5~5A/dm ² Perform a pre-plating procedure, and then perform a high-speed electroplating filling procedure with a current density of 6 to 100 A/dm ² to fill the metal gap structure 90 with a metal conductive material, thereby metalizing the metal gap structure 90 (ie, step 640). When performing step 630, the element 400 needs to be arranged at the position of the cathode, and the position of the anode can be configured with a soluble anode (that is, used to supplement metal ions consumed in the plating solution) or an insoluble anode (eg, titanium mesh, iridium /Tantalum oxide composite anode), in this embodiment, the material of the anode may be but not limited to iridium/tantalum oxide composite insoluble anode. The metal ions in the plating solution are selected from silver ions, gold ions, nickel ions, The group of cobalt ions, palladium ions and copper ions can be adjusted according to needs. During the high-speed electroplating process (ie step 640), the power supply device can be pre-plated through the current density of 0.5~5A/dm ² and then increase the current density (ie the current density is 6~100A/dm ² ) for high speed Filling electroplating, where the time required for pre-plating and high-speed filling electroplating can be adjusted according to actual needs.

由於超音波的空化作用，可以使電鍍液更充分的進入金屬縫隙結構90內，即時補充金屬離子與添加劑等，使金屬縫隙結構90內填充對應該金屬離子的金屬導電材料，從而使金屬縫隙結構90金屬化(如「第13B圖」所示)，可避免產生外觀上及結構上之缺陷(例如：孔洞產生及晶粒分佈不均之問題)。 Due to the cavitation effect of ultrasonic waves, the electroplating solution can be more fully entered into the metal gap structure 90, and metal ions and additives can be replenished instantly, so that the metal gap structure 90 is filled with the metal conductive material corresponding to the metal ions, so that the metal gap The metallization of the structure 90 (as shown in "Figure 13B") can avoid the appearance and structural defects (for example: the problem of holes and uneven distribution of grains).

此外，請參閱「第14圖」，「第14圖」為本發明高速電鍍方法之第六實施例方法流程圖，高速電鍍方法的步驟可包括：提供元件，元件具有金屬縫隙結構(步驟610)；對元件以預處理程序進行清洗(步驟620)；配置元件於具有金屬離子的電鍍液中(步驟630)；以及開啟超音波震盪裝置震盪電鍍液，開啟噴流裝置攪拌電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍填充程序於金屬縫隙結構內填充金屬導電材料，從而使金屬縫隙結構金屬化(步驟740)。 In addition, please refer to "Figure 14", which is a flowchart of the method of the sixth embodiment of the high-speed electroplating method of the present invention. The steps of the high-speed electroplating method may include: providing a device with a metal slit structure (step 610) ; Clean the components in a pretreatment procedure (step 620); configure the components in a plating solution with metal ions (step 630); and turn on the ultrasonic oscillation device to oscillate the plating solution, turn on the jet device to stir the plating solution, and supply through the power supply The device first performs a pre-plating process with a current density of 0.5~5A/dm ² and then performs a high-speed electroplating filling process with a current density of 6~100A/dm ² to fill the metal gap structure with a metal conductive material, thereby metalizing the metal gap structure (Step 740).

綜上所述，可知本發明與先前技術之間的差異在於將基板或元件配置於超音波震盪的電鍍液中以進行高電流密度電鍍，藉由此一技術手段可以解決先前技術所存在的問題，進而達成提供均勻化之金屬沉積物之技術功效。 In summary, it can be seen that the difference between the present invention and the prior art is that the substrate or device is disposed in an ultrasonic oscillating plating solution for high current density electroplating, which can solve the problems of the prior art by a technical means To achieve the technical effect of providing uniform metal deposits.

雖然本發明以前述之實施例揭露如上，然其並非用以限定本發明，任何熟習相像技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之專利保護範圍須視本說明書所附之申請專利範圍所界定者為準。 Although the present invention is disclosed as the foregoing embodiments, it is not intended to limit the present invention. Anyone who is familiar with similar arts can make some changes without departing from the spirit and scope of the present invention. The scope of patent protection of the present invention shall be subject to the scope of the patent application attached to this specification.

步驟110‧‧‧提供基板，基板表面具有待鍍層 Step 110: Provide a substrate with a layer to be plated on the surface of the substrate

步驟120‧‧‧將乾膜光阻覆蓋於待鍍層上，並將乾膜光阻圖案化 Step 120: Cover the dry film photoresist on the layer to be plated and pattern the dry film photoresist

步驟130‧‧‧對基板以預處理程序進行清洗 Step 130: Wash the substrate with a pretreatment procedure

步驟140‧‧‧配置基板於具有金屬離子的電鍍液中 Step 140: Dispose the substrate in the plating solution with metal ions

步驟150‧‧‧開啟超音波震盪裝置震盪電鍍液，並透過電源供應裝置先以電流密度為0.5~5A/dm²進行預鍍程序，再以電流密度為6~100A/dm²進行高速電鍍程序 Step 150‧‧‧Turn on the ultrasonic oscillating device to oscillate the electroplating solution, and perform the pre-plating process with the current density of 0.5~5A/dm ² through the power supply device, and then perform the high-speed plating process with the current density of 6~100A/dm ²

步驟160‧‧‧於未有乾膜光阻覆蓋的待鍍層上形成金屬導電柱 Step 160: Form a metal conductive pillar on the layer to be plated that is not covered by the dry film photoresist

步驟170‧‧‧去除覆蓋於待鍍層上的乾膜光阻 Step 170‧‧‧Remove the dry film photoresist covering the layer to be plated

Claims

一種高速電鍍方法，其步驟包括：提供一基板，該基板表面具有一待鍍層；將一乾膜光阻覆蓋於該待鍍層上，並將該乾膜光阻圖案化；對該基板以一預處理程序進行清洗；配置該基板於具有一金屬離子的一電鍍液中；開啟設置於一電鍍槽底部之一超音波震盪裝置，使其由該電鍍槽底部開始向上震盪該電鍍液，開啟設置於該基板正下方之一噴流裝置，使其攪拌該電鍍液且攪拌該電鍍液的方向與金屬沉積物之生成方向相互垂直，並透過一電源供應裝置先以電流密度為0.5~5A/dm²進行一預鍍程序，再以電流密度為6~100A/dm²，但不包括6~10A/dm²，進行一高速電鍍程序；於未有該乾膜光阻覆蓋的待鍍層上形成一金屬導電柱；以及去除覆蓋於待鍍層上的該乾膜光阻。 A high-speed electroplating method, the steps of which include: providing a substrate with a layer to be plated on the surface of the substrate; covering a dry film photoresist on the layer to be plated and patterning the dry film photoresist; pretreating the substrate Cleaning procedure; configure the substrate in a plating solution with a metal ion; turn on an ultrasonic oscillating device provided at the bottom of a plating tank, so that it starts to oscillate the plating solution upward from the bottom of the plating tank and turn on the setting A jet device directly below the substrate makes it agitate the plating solution and the direction of stirring the plating solution is perpendicular to the direction of the formation of metal deposits, and through a power supply device, the current density is 0.5~5A/dm ² Pre-plating process, then with a current density of 6~100A/dm ² , but not including 6~10A/dm ² , perform a high-speed plating process; form a metal conductive column on the layer to be plated that is not covered by the dry film photoresist ; And removing the dry film photoresist covering the layer to be plated.

根據申請專利範圍第1項之高速電鍍方法，其中，該超音波震盪該電鍍液的頻率為5~100千赫茲(Kilo Hertz，KHz)。 According to the high-speed electroplating method of item 1 of the patent application range, the frequency of the ultrasonic wave oscillating the electroplating solution is 5 to 100 kilohertz (Kilo Hertz, KHz).

根據申請專利範圍第1項之高速電鍍方法，其中，該金屬離子選自於由銀離子、金離子、鎳離子、鈷離子、鈀離子與銅離子所構成的群組。 According to the high-speed electroplating method of item 1 of the patent application range, the metal ion is selected from the group consisting of silver ion, gold ion, nickel ion, cobalt ion, palladium ion, and copper ion.

根據申請專利範圍第1項之高速電鍍方法，其中，該去除覆蓋於該待鍍層上的該乾膜光阻之步驟包括：利用四氫呋喃(THF)或氫氧化鈉(NaOH)去除覆蓋於該待鍍層上的該乾膜光阻。 The high-speed electroplating method according to item 1 of the patent application scope, wherein the step of removing the dry film photoresist covering the layer to be plated includes: using tetrahydrofuran (THF) or sodium hydroxide (NaOH) to remove the layer covering the layer to be plated The photoresist on the dry film.

一種高速電鍍方法，其步驟包括：提供一基板；透過一雷射鑽孔製程或一機械鑽孔製程於該基板形成一盲孔或通孔結構；於該基板的表面與該盲孔或通孔結構的孔壁形成一待鍍層；對該基板以一預處理程序進行清洗；配置該基板於具有一金屬離子的一電鍍液中；以及開啟設置於一電鍍槽底部之一超音波震盪裝置，使其由該電鍍槽底部開始向上震盪該電鍍液，開啟設置於該基板正下方之一噴流裝置，使其攪拌該電鍍液且攪拌該電鍍液的方向與金屬沉積物之生成方向相互垂直，並透過一電源供應裝置先以電流密度為0.5~5A/dm²進行一預鍍程序，再以電流密度為6~100A/dm²，但不包括6~10A/dm²，進行一高速電鍍填孔程序於該盲孔或通孔結構內填充一金屬導電材料，從而形成一導電孔。 A high-speed electroplating method, the steps of which include: providing a substrate; forming a blind hole or through-hole structure on the substrate through a laser drilling process or a mechanical drilling process; on the surface of the substrate and the blind hole or through-hole The hole wall of the structure forms a layer to be plated; the substrate is cleaned by a pretreatment procedure; the substrate is arranged in a plating solution with a metal ion; and an ultrasonic oscillating device provided at the bottom of a plating tank is opened to make Starting from the bottom of the electroplating tank, the electroplating solution is shaken upwards, and a jet device provided directly below the substrate is turned on, so that the direction in which the electroplating solution is stirred and the electroplating solution is stirred is perpendicular to the direction in which the metal deposits are generated, and penetrates A power supply device first performs a pre-plating process with a current density of 0.5~5A/dm ² and then performs a high-speed electroplating hole filling process with a current density of 6~100A/dm ² but excluding 6~10A/dm ² A metal conductive material is filled in the blind hole or through hole structure to form a conductive hole.

根據申請專利範圍第5項之高速電鍍方法，其中，該超音波震盪該電鍍液的頻率為5KHz至100KHz。 According to the high-speed electroplating method of claim 5 of the patent application scope, wherein the frequency of the ultrasonic wave oscillating the electroplating solution is 5KHz to 100KHz.

根據申請專利範圍第5項之高速電鍍方法，其中，該金屬離子選自於由銀離子、金離子、鎳離子、鈷離子、鈀離子與銅離子所構成的群組。 According to the high-speed electroplating method of claim 5 of the patent application range, the metal ion is selected from the group consisting of silver ion, gold ion, nickel ion, cobalt ion, palladium ion and copper ion.

一種高速電鍍方法，其步驟包括：提供一元件，該元件具有一金屬縫隙結構；對該元件以一預處理程序進行清洗；配置該元件於具有一金屬離子的一電鍍液中；以及開啟設置於一電鍍槽底部之一超音波震盪裝置，使其由該電鍍槽底部開始向上震盪該電鍍液，開啟設置於該元件正下方之一噴流裝置，使其攪拌該電鍍液且攪拌該電鍍液的方向與金屬沉積物之生成方向相互垂直，並透過一電源供應裝置先以電流密度為0.5~5A/dm²進行一預鍍程序，再以電流密度為6~100A/dm²，但不包括6~10A/dm²，進行一高速電鍍填充程序於該金屬縫隙結構內填充一金屬導電材料，從而使該金屬縫隙結構金屬化。 A high-speed electroplating method, the steps of which include: providing a component with a metal gap structure; cleaning the component with a pretreatment procedure; arranging the component in an electroplating solution with a metal ion; An ultrasonic oscillating device at the bottom of an electroplating tank oscillates the electroplating solution upwards from the bottom of the electroplating tank, and turns on a jet device disposed directly under the element to stir the electroplating solution and the direction of the electroplating solution It is perpendicular to the generation direction of metal deposits, and through a power supply device, a pre-plating process is performed with a current density of 0.5~5A/dm ² and then a current density of 6~100A/dm ² , but excluding 6~ 10A/dm ² , performing a high-speed electroplating filling procedure to fill a metal conductive material in the metal gap structure, thereby metalizing the metal gap structure.

根據申請專利範圍第8項之高速電鍍方法，其中，該超音波震盪該電鍍液的頻率為5KHz至100KHz。 According to the high-speed electroplating method of claim 8 of the patent application range, the frequency of the ultrasonic wave oscillating the electroplating solution is 5KHz to 100KHz.

根據申請專利範圍第8項之高速電鍍方法，其中，該金屬離子選自於由銀離子、金離子、鎳離子、鈷離子、鈀離子與銅離子所構成的群組。 According to the high-speed electroplating method of claim 8, the metal ion is selected from the group consisting of silver ion, gold ion, nickel ion, cobalt ion, palladium ion and copper ion.