TWI692002B - 可撓式基板結構、可撓式電晶體及其製造方法 - Google Patents
可撓式基板結構、可撓式電晶體及其製造方法 Download PDFInfo
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Abstract
本發明提供一種可撓式基板結構,包含:軟性基板;第一介電層,位於所述軟性基板上;含金屬層,具有反射率大於15%,以及熱導係數大於2瓦/(米.克耳文)(W/m.K);以及第二介電層,其中所述含金屬層設置於所述第一介電層與所述第二介電層之間。本發明還同時提供一種包含上述可撓式基板結構的可撓式電晶體,以及可撓式電晶體的製造方法。
Description
本發明是關於一種可撓式基板結構,尤其是關於一種可以應用於雷射加工的可撓式基板結構。本發明同時是關於包含上述可撓式基板結構的可撓式電晶體以及上述可撓式電晶體的製造方法。
隨著科技的進步與快速發展,例如液晶顯示器、行動電話、筆記型電腦以及數位相機等電子產品已經非常普遍,不僅被普羅大眾所頻繁使用,同時也是產業發產的重點與趨勢。而在市場追求高效能、高便利性、可攜帶性以及微小化的趨勢下,既有的電晶體製程已經無法滿足需求。因此,為擴大電晶體的應用範圍以及可變化性,近年來許多研究者致力於開發可撓式電晶體。
一般普遍用於製造可撓式電晶體的可撓式基板主要含有由有機材料所製成的有機軟性基板,其不耐高溫。因此,在製造可撓式電晶體的過程中,為了避免有機軟性基板因受熱而裂解,多半使用具低穿透性的短波長雷射來結晶(crystallization)位於有機軟性基板上面的非晶或奈米晶半導體材料,以形成多晶材料層,並搭配使用低溫長時間熱退火製程來進行源/汲極的活化。然而,上述製程的極限難以進一步縮小可撓式電晶體,從而阻礙電子產品微小化的發展趨勢。
本發明主要目的是提供一種可撓式基板結構,包含一軟性基板;一第一介電層,位於軟性基板上;一含金屬層,具有一反射率大於15%以及一熱導係數大於2瓦/(米.克耳文);以及一第二介電層,其中含金屬層設置於第一介電層與第二介電層之間,而第二介電層為無機材料層。
於本發明之一較佳實施例中,上述第一介電層為無機材料層。
於本發明之一較佳實施例中,上述含金屬層接觸並設置於第一介電層上,且第二介電層接觸並設置於含金屬層上。
於本發明之一較佳實施例中,上述軟性基板的玻璃轉換溫度小於450℃。
於本發明之一較佳實施例中,上述含金屬層全面性地覆蓋第一介電層。
於本發明之一較佳實施例中,上述含金屬層全面性地遮蔽軟性基板。
本發明另一主要目的是提供一種種可撓式電晶體,包含一可撓式基板結構,其包含:一軟性基板;一第一介電層,位於軟性基板上;一含金屬層,具有一反射率大於15%以及一熱導係數大於2瓦/(米.克耳文);一第二介電層,其中含金屬層設置於第一介電層與第二介電層之間,而第二介電層為無機材料層;一電晶體元件,形成於第二介電層上,並具有一通道寬度以及一閘極長度,其中通道寬度小於1微米,而閘極長度小於1微米,而電晶體元件包括:一源/汲極結構,形成於第二介電層上,並為多晶結構;以及一閘極結構,設置於源/汲極結構上。
於本發明之一較佳實施例中,上述第一介電層為無機材料層。
本發明另一主要目的是提供一種可撓式電晶體的製造方法,包含:提供一支撐載板以及一配置於支撐載板的軟性基板;在軟性基板上依序形成一第一介電層、一含金屬層以及一第二介電層以及一非晶或奈米晶(nanocrystalline phase)半導體層,其中含金屬層具有一反射率大於15%,以及一熱導係數大於2瓦/(米.克耳文);對非晶或奈米晶(nanocrystalline phase)半導體層進行一雷射退火,以形成一多晶半導體層;移除部分多晶半導體層,以形成一通道圖案層;形成一閘極結構於通道圖案層上;以及移除支撐載板。
於本發明之一較佳實施例中,上述對非晶或奈米晶(nanocrystalline phase)半導體層進行雷射退火的步驟包括:照射一多波段雷射光束(multi-wavelength laser beam)於非晶或奈米晶(nanocrystalline phase)半導體層。
於本發明之一較佳實施例中,上述多波段雷射光束的波長範圍介於193奈米至10.6微米之間。
於本發明之一較佳實施例中,上述形成電晶體元件的步驟還包括:對通道圖案層進行一雷射活化,以形成一源/汲極結構。
於本發明之一較佳實施例中,上述通道圖案層進行一雷射活化的步驟還包括:照射一多波段雷射光束於部分通道圖案層,以形成源/汲極結構。
綜上所述,本發明提供可撓式基板結構、包含上述可撓式基板結構的可撓式電晶體及其製造方法,其中可撓式基板結構能適用於長波長(例如波長大於193奈米)的雷射加工,例如雷射退火(laser annealing)或雷射活化(laser activation)。在可以套用既有使用材料以及習知使用於產線上的雷射技術的前提下,來進行可撓式電晶體製程中的結晶(例如雷射結晶)與活化(例如雷射活化),製作出熱退火製程無法達到的小尺寸可撓式電晶體元件,促使可撓式電晶體的元件尺寸能進一步縮小到1微米以下,甚至可以縮小至400奈米以下。
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂,下文特舉數個較佳實施例,並配合所附圖式,作詳細說明如下。
10:可撓式基板結構
11:軟性基板
12、14:介電層
13:含金屬層
20:可撓式電晶體
21:支撐載板
22:非晶或奈米晶(nanocrystalline phase)半導體層
22’:多晶半導體層
23:通道圖案層
23’:源/汲極結構
24:閘極結構
241:閘介電層
242:閘極層
L1、L2:雷射光束
Lc:通道寬度
Lg:閘極長度
圖1是依據本發明較佳實施例所繪製的可撓式基板的結構示意圖;以及圖2a-2f是依據本發明一較佳實施態樣所繪製的可撓式電晶體於不同製程步驟中的結構示意圖。
圖1為依據本發明實施例所繪製的可撓式基板結構10的結構示意圖。請參閱圖1,可撓式基板結構10能用來製造可撓式電晶體,並包含軟性基板11、第一介電層12、含金屬層13以及第二介電層14。軟性基板11為有機聚合物,並可選自於聚對苯二甲酸乙二酯(polyethylene terephthalate,簡稱PET)、聚萘二甲酸乙二酯(polyethylene naphthalate,簡稱PEN)、聚苯醚碸(polyethersulfone,簡稱PES)以及聚醯亞胺(polyimide,簡稱PI),或是這些有機聚合物的任意組合。此外,軟性基板11的玻璃轉換溫度(glass transition temperature)可小於450℃,例如410℃或400℃,以使軟性基板11不會很容易因高溫而變質或損壞。
第二介電層14為無機材料層,其例如是氧化矽(如二氧化矽)、氮化矽或氮氧化矽,或這些材料的任意組合。第一介電層12與第二介電層14可為不相同的材質,例如第二介電層14可為有機材料層。或者,第一介電層12與第二介電層14也可以是相同的材質,例如第一介電層12也為無機材料層。第一介電層12與第二介電層14至少其中一層可以是多層膜(multilayer),且兩者可以是相同或相異的多層膜,其中此多層膜的其中一膜層材質可以是氧化矽(如二氧化
矽)、氮化矽或氮氧化矽,且多層膜可由至少兩種不同材質的膜層構成,或者是用相同一種材質的膜層構成。
第一介電層12的厚度可介於50奈米至1000奈米之間,而第二介電層14的厚度可介於50奈米至1000奈米之間,所以第二介電層14的厚度可大於第一介電層12的厚度。第一介電層12與第二介電層14兩者的厚度總和可介於1.5至2.5微米之間,較佳是小於或等於2微米,而第一介電層12與第二介電層14兩者的厚度比值較佳介於0.1至4之間,以避免第一介電層12與第二介電層14兩者厚度落差所導致的應力問題。
含金屬層13的厚度可介於50奈米至500奈米之間,例如是50奈米至300奈米之間。含金屬層13接觸並設置於第一介電層12上,且第二介電層14接觸並設置於含金屬層13上,如圖1所示。含金屬層13可選用純金屬或是其他含金屬原子的材質。純金屬例如銀(Ag)、金(Au)、鋁(Al)、鎢(W)、鈦(Ti)、鉭(Ta)或鉬(Mo),而含金屬原子的材質可以是金屬化合物、合金、合成陶瓷材料或複合金屬材料,例如鋁銅(AlCu)、鋁矽銅合金(Al-Si-Cu)、氮化鈦(TiN)或氮化鉭(TaN)。此外,含金屬層13也可改用導熱性碳材料層,例如石墨烯。
含金屬層13的反射率(reflectivity)大於15%,例如20%、20%以上或50%。含金屬層13的熱導係數(heat transfer coefficient,用以表示thermal conductivity)大於2瓦/(米.克耳文),而含金屬層13的熱擴散係數大於9x10-7平方公尺/秒。例如,含金屬層13為銀、金或鋁矽銅合金所製成的膜層,其反射率可大於50%,而熱導係數可大於20瓦/(米.克耳文)。含金屬層13為氮化鈦所製成的膜層,其反射率可大於15%,而熱導係數可大於2瓦/(米.克耳文)。
由於含金屬層13具有大於15%的反射率,因此含金屬層13不僅能遮擋光線(例如雷射光束),而且還能反射一定強度的光線。含金屬層13全面性地覆蓋第一介電層12,並且全面性地遮蔽軟性基板11。如此,當有光線(例如雷射
光束)從第二介電層14入射於可撓式基板結構10時,含金屬層13能遮蔽此光線,以使光線不會進入含金屬層13下方的軟性基板11。
圖2a-2f是依據本發明一實施態樣所繪製的可撓式電晶體於不同製程步驟中的結構示意圖,並且為方便理解,圖2a-2f中與圖1中具有相同功能的元件沿用相同元件標號,但此並非用以限制本發明。請參閱圖2a,在製造可撓式電晶體的方法中,首先,提供支撐載板21以及配置於支撐載板21的軟性基板11,其中支撐載板21可為剛性板材(rigid board),例如玻璃板、陶瓷板或金屬板。軟性基板11可黏合於支撐載板21,但軟性基板11是暫時性地固定於支撐載板21上。例如,支撐載板21與軟性基板11之間可夾置去結合層(De-Bonding Layer,DBL),其能使軟性基板11與支撐載板21在後續流程中能彼此分離,其中去結合層可為離型層(release layer),以使軟性基板11可從支撐載板21剝離。
接著,在軟性基板11上依序形成第一介電層12、含金屬層13以及第二介電層14。第一介電層12與第二介電層14可利用化學氣相沉積(Chemical VaporDeposition,簡稱CVD)來形成。含金屬層13可利用化學氣相沉積或物理氣相沉積(Physical Vapor Deposition,簡稱PVD)來形成。之後,進行後續流程,以在第二介電層14上形成電晶體元件。
請參閱圖2a、圖2b與圖2c,在形成電晶體元件的過程中,先形成非晶或奈米晶(nanocrystalline phase)半導體層22於第二介電層14上,其中非晶或奈米晶(nanocrystalline phase)半導體層22可利用化學氣相沉積來形成。接著,對非晶或奈米晶(nanocrystalline phase)半導體層22進行雷射退火,以形成多晶半導體層22’(請參閱圖2c)。多晶半導體層22’是多晶結構,材質可選用常見的半導體通道材質,例如多晶矽、多晶矽鍺、多晶鍺,而非晶或奈米晶(nanocrystalline phase)半導體層22的材質則可依據所欲形成的多晶半導體層22’來進行對應調整。進行雷射退火包括以下步驟。首先,令至少一道雷射光束L1照射於非晶或奈米晶
(nanocrystalline phase)半導體層22,以加熱非晶或奈米晶(nanocrystalline phase)半導體層22,進而對非晶或奈米晶(nanocrystalline phase)半導體層22進行退火。
雷射光束L1可為多波段雷射光束,其波長範圍可介於193奈米至10.6微米之間,如圖2b所示,而雷射光束L1可來自於二氧化碳雷射、準分子雷射(Excimer Laser Annealing,ELA,波長308奈米)、脈衝固態激光雷射(pulse solid-state laser,波長355奈米)、連續波雷射(continuous-wave laser,波長532nm)、摻釹釔鋁石榴石雷射(Nd:YAG,波長532nm)以及二極體雷射(diode laser,波長1064奈米)其中至少一者。此外,雷射光束L1的功率可大於75毫焦耳/平方公分(mJ/cm2),例如120或125毫焦耳/平方公分。
當照射於非晶或奈米晶(nanocrystalline phase)半導體層22的雷射光束L1為多波段雷射光束時,對非晶或奈米晶(nanocrystalline phase)半導體層22進行雷射退火的步驟可以是照射此多波段雷射光束L1於非晶或奈米晶(nanocrystalline phase)半導體層22。詳細而言,如圖2b所示,雷射光束L1可由多道雷射光源所發出的光束而合成,其中這些雷射光源的波長可以彼此相等或不同。當這些雷射光源的波長彼此相等時,雷射光束L1可以是355奈米的雷射光束。當這些雷射光源的波長彼此不同時,這些雷射光源的波長範圍可介於193奈米至10.6微米之間。舉例而言,可以照射至少兩道雷射光束於非晶或奈米晶(nanocrystalline phase)半導體層22以進行退火,其中這些雷射光束的參數可以彼此不同。例如,兩道雷射的波長、尺寸(beam size)、功率以及照射時間(dwell time)至少一者不同。此外,這些用於退火非晶或奈米晶(nanocrystalline phase)半導體層22的雷射光束可以同時照射或不同時照射非晶或奈米晶(nanocrystalline phase)半導體層22。
在本發明較佳實施例中,多波段雷射光束(即雷射光束L1)是由脈衝紫外光雷射(UV-LSA,波長355奈米)及脈衝綠光雷射(GN-LSA,波長532奈米)
所發出的光束而形成,所以本實施例是採用脈衝紫外光雷射與脈衝綠光雷射來進行雷射退火,其中雷射退火是在25℃下進行,雷射的掃描脈衝寬度為13奈秒,掃描速度為25公分/秒。雷射光束L1的尺寸(beam size)為2.5公厘X65微米,而最佳的脈衝紫外光雷射(UV-LSA)與脈衝綠光雷射的雷射能量分別為125毫焦耳/平方公分和120毫焦耳/平方公分。透過以上本實施例所採用的雷射光束L1,多晶半導體層22’的平均晶粒尺寸可達約800奈米,同時還可降低S/D阻抗至80歐姆/平方,從而有利於製作電晶體元件。
請參閱圖2d,接著如圖2d所示,移除部分多晶半導體層22’並暴露出部分第二介電層14,以形成通道圖案層23,其中移除的方法例如可以是光刻技術或電子束蝕刻(但在此不做限制)。請參閱圖2e,於通道圖案層23上及第二介電層14上形成閘極結構24。閘極結構24於通道圖案層23以及第二介電層14上包含閘介電層241以及閘極層242,並且於後對未被閘極結構24覆蓋的部分通道圖案層23照射雷射光束L2,以進行雷射活化,從而形成為多晶結構的源/汲極結構23’,而其他被閘極結構24覆蓋的部分通道圖案層23則成為連接於源/汲極結構23’的通道層。雷射光束L2的波長可以不同於雷射光束L1的波長,例如雷射光束L1的波長可以是355奈米,而雷射光束L2的波長可以是532奈米。當然,在其他實施例中,雷射光束L2的波長也可相同於雷射光束L1的波長。此外,雷射光束L2也可以是多波段雷射光束,所以對通道圖案層23進行雷射活化的步驟還包括照射多波段雷射光束於部分通道圖案層23,以形成源/汲極結構23’。因此,雷射光束L2可由多道雷射光源所發出的光束而合成,而這些雷射光源的波長可以彼此相等或不同。也就是說,可以照射至少兩道雷射光束於通道圖案層23以進行活化,其中這些雷射光束的參數,例如波長、尺寸(beam size)、功率以及照射時間至少一者可以彼此不同。此外,這些用於雷射活化的雷射光束可以同時照射或不同時照射於通道圖案層23。
至此,包括閘極結構24與源/汲極結構23’的電晶體元件已形成於第二介電層14上。此外,閘介電層241的材質可以是氧化矽、氮化矽等,或是高介電材料(如氧化鋁Al2O3、氧化鉿HfO2、氧化鋯ZrO2等),並且閘極層242的材質可以是鋁(Al)、鋁銅(AlCu)、鋁矽銅(AlSiCu)、鉬(Mo)、氮化鈦(TiN)、氮化鉭(TaN)、氮化鈦複合金屬材料、氮化鉭複合金屬材料等。
請參閱圖2f,之後,移除支撐載板21,以形成如圖2f所示的可撓式電晶體20,其包括可撓式基板結構10以及電晶體元件。圖2f所示的可撓式電晶體20可為場效電晶體(FET),其閘極結構24橫跨設置於源/汲極結構23’上,並具有一延伸方向,其垂直於源/汲極結構23’的延伸方向,但可撓式電晶體20僅是作為說明之用,本發明提供的可撓式基板結構可以套用於其他種類的電晶體,例如互補式金屬氧化半導體(CMOS)、薄膜電晶體(TFT)等,並且可以套用對應的現有製程方法,因此不在此一一繪示與說明。
以目前習知技術來說,雖然雷射退火與雷射活化已被套用於一般非可撓式電晶體製程中,並且依需要可以選擇使用波長大於193奈米的雷射光束來進行活化或結晶。而可撓式電晶體由於現有結構與材質特性限制,導致無法直接將非可撓式電晶體製程套用於可撓式電晶體。然而,本案所提供的可撓式基板結構10可以適用於多波段雷射光束,例如目前常見波長範圍的雷射光束來進行雷射加工(例如雷射退火或雷射活化),其中的含金屬層13可以有效反射雷射光束能量,並能阻擋雷射結晶/活化產生的高溫直接傳遞到下面的軟性基板11,以防止軟性基板11遭到傷害。
再者,位於軟性基板11與含金屬層13之間的第一介電層12具有隔熱作用,以避免含金屬層13因雷射光束L1與L2的加熱而破壞軟性基板11。第二介電層14位於含金屬層13與非晶或奈米晶(nanocrystalline phase)半導體層22之間,除了能避免含金屬層13中的金屬汙染非晶或奈米晶(nanocrystalline phase)半
導體層22之外,還能具有蓄熱的作用,使結晶形成的多晶半導體層22’具有較大的晶粒尺寸。
依據本案發明人實際測試,使用相同短波長雷射結晶製成,於本案可撓式基板結構上形成的多晶矽層相較於習知基板結構上形成的多晶矽層,具有較大的平均晶粒尺寸;而本案提供的可撓式基板結構由於可以適用於長波長(例如大於193奈米)雷射製程,因此平均晶粒尺寸更可以達到1微米以上,提供習知結構無法提供的大晶粒尺寸,具有低功率下產生大晶粒尺寸之功效,進而達到低阻抗源/汲極效應的不可預期功效。
可撓式基板結構10可使用於長波長雷射光束來進行雷射退火或雷射活化,因此相較於習知技術,本發明能提供較小的元件尺寸的可撓式電晶體20,其尺寸最小可達400奈米。以圖2f所示的可撓式電晶體20來說明,閘介電層241的厚度較佳小於10奈米,而閘電極層242的厚度較佳小於100奈米。源/汲極結構23’的厚度較佳大於40奈米,小於150奈米,且基本上相同於多晶半導體層22’及通道圖案層23的厚度。
電晶體元件具有閘極長度Lg與通道寬度Lc,其中閘極長度Lg較佳可小於1微米,而通道寬度Lc較佳小於1微米。此外,通道寬度Lc與閘極長度Lg之間的比值(Lc/Lg)可介於0.5至4之間。上述通道寬度Lc與閘極長度Lg之間的比值正比於源/汲極結構23’之間的電流,因此通道寬度Lc與閘極長度Lg之間的比值越大,可撓式電晶體20源極與汲極之間所產生的電流也越大,以至於可撓式電晶體20在液晶顯示器的應用上有利於驅動液晶分子偏轉,從而提升液晶顯示器的運作。此外,依據本發明的不同實施例,雷射退火與雷射活化可以單獨或分別選用單一或多波長雷射製程。例如本發明的一實施例中,雷射退火時可先使用355奈米的雷射光束加熱通道圖案層23’表面,再使用532奈米的雷射光束進行雷射活化。
如上所說明,習知技術中是利用非晶或奈米晶矽吸收短波長(308奈米以下)雷射光束的特性,選用能被非晶或奈米晶矽吸收的短波長(能被目前所使用的有機材料能吸收,且套用於製程產線上的最長波長為308奈米),並且由於吸收過程中的光能轉換為熱能,因此必須要有厚度至少2微米以上的介電層介於非晶或奈米晶矽與有機材料之間以進行隔熱,其中介電層厚度越厚,所得到的晶粒尺寸也越大,越有利於提升電晶體元件的效能。本發明利用非晶或奈米晶半導體層吸收短波長的特性來進行結晶,而是藉由改變可撓式基板結構,在能防止光束穿透破壞軟性基板的前提下,利用金屬層/介電層蓄熱的特性來進行雷射退火結晶,並且也可以利用相同結構來進行雷射活化。
雖然已經有關於多波長雷射製程的相關想法被提出,以提升產品效能,但由於現有結構與材質特性上的困難,無法實際將理論套用於產線上。然而本發明提供的可撓式基板結構能解決上述問題,在可以套用既有使用材料以及既有產線上的雷射技術的前提下,來進行可撓式電晶體製程中的結晶與活化,製作出熱退火製程無法達到的小尺寸可撓式電晶體元件,同時由於本案是利用金屬層/介電層蓄熱來進行可撓式電晶體製程中的結晶步驟,在使用與習知相同雷射功率的狀況下也能產生較大的平均晶粒尺寸,而在使用長波長雷射的實施例中更能產生習知可撓式電晶體無法達到的大晶粒尺寸,因此本發明提供的結構與方法具有低功率下產生大晶粒尺寸之功效,進而達到低阻抗源/汲極效應的不可預期功效。
綜上所述,本發明提供的可撓式基板結構、包含上述可撓式基板結構的可撓式電晶體及其製造方法,能適用於長波長雷射製程,使可撓式電晶體的製程中能使用雷射技術來進行結晶與活化,促使可撓式電晶體的元件尺寸能進一步縮小,例如可縮小到400奈米以下。
雖然本發明已以實施例揭露如上,然其並非用以限定本發明。任何該領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10:可撓式基板
11:軟性基板
12、14:介電層
13:含金屬層
20:可撓式電晶體
23’:源/汲極結構
24:閘極結構
241:閘介電層
242:閘極層
Lc:通道寬度
Lg:閘極長度
Claims (12)
- 一種可撓式基板結構,包含:一軟性基板;一第一介電層,位於該軟性基板上;一含金屬層,具有一反射率大於15%,以及一熱導係數大於2瓦/(米.克耳文),其中該含金屬層全面性地覆蓋該第一介電層;以及一第二介電層,其中該含金屬層設置於該第一介電層與該第二介電層之間,而該第二介電層為無機材料層。
- 如請求項1所述之可撓式基板結構,其中該第一介電層為無機材料層。
- 如請求項1所述之可撓式基板結構,其中該含金屬層接觸並設置於該第一介電層上,且該第二介電層接觸並設置於該含金屬層上。
- 如請求項1所述之可撓式基板結構,其中該軟性基板的玻璃轉換溫度小於450℃。
- 如請求項1所述之可撓式基板結構,其中該含金屬層全面性地遮蔽該軟性基板。
- 一種可撓式電晶體,包含:一可撓式基板結構,包含:一軟性基板;一第一介電層,位於該軟性基板上;一含金屬層,具有一反射率大於15%,以及一熱導係數大於2瓦/(米.克耳文);一第二介電層,其中該含金屬層設置於該第一介電層與該第二介電層之間,而該第二介電層為無機材料層; 一電晶體元件,形成於該第二介電層上,並具有一通道寬度以及一閘極長度,其中該通道寬度小於1微米,而該閘極長度小於1微米,而該電晶體元件包括:一源/汲極結構,形成於該第二介電層上,並為多晶結構;以及一閘極結構,設置於該源/汲極結構上。
- 如請求項6所述之可撓式電晶體,其中該第一介電層為無機材料層。
- 一種可撓式電晶體的製造方法,包含:提供一支撐載板以及一配置於該支撐載板的軟性基板;在該軟性基板上依序形成一第一介電層、一含金屬層以及一第二介電層以及一非晶或奈米晶半導體層,其中該含金屬層具有一反射率大於15%,以及一熱導係數大於2瓦/(米.克耳文);對該非晶或奈米晶半導體層進行一雷射退火,以形成一多晶半導體層;移除部分該多晶半導體層,以形成一通道圖案層;形成一閘極結構於該通道圖案層上;以及移除該支撐載板。
- 如請求項8所述之可撓式電晶體的製造方法,其中對該非晶或奈米晶半導體層進行該雷射退火的步驟包括:照射一多波段雷射光束於該非晶或奈米晶半導體層。
- 如請求項9所述之可撓式電晶體的製造方法,其中該多波段雷射光束的波長範圍介於193奈米至10.6微米之間。
- 如請求項10所述之可撓式電晶體的製造方法,其中形成該電晶體元件的步驟還包括:對該通道圖案層進行一雷射活化,以形成一源/汲極結構。
- 如請求項10所述之可撓式電晶體的製造方法,其中對該通道圖案層進行一雷射活化的步驟還包括:照射一多波段雷射光束於部分該通道圖案層,以形成該源/汲極結構。
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TW201721845A (zh) * | 2015-12-10 | 2017-06-16 | 財團法人工業技術研究院 | 半導體元件 |
TW201801305A (zh) * | 2016-03-24 | 2018-01-01 | 三星顯示器有限公司 | 具有受保護發光層之有機發光顯示設備 |
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US20180248044A1 (en) | 2018-08-30 |
US10600915B2 (en) | 2020-03-24 |
TW201833999A (zh) | 2018-09-16 |
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