TWI687381B - 氣密封裝之製造方法及氣密封裝 - Google Patents
氣密封裝之製造方法及氣密封裝 Download PDFInfo
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- TWI687381B TWI687381B TW106106780A TW106106780A TWI687381B TW I687381 B TWI687381 B TW I687381B TW 106106780 A TW106106780 A TW 106106780A TW 106106780 A TW106106780 A TW 106106780A TW I687381 B TWI687381 B TW I687381B
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- laser light
- irradiation
- sealing material
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000011521 glass Substances 0.000 claims abstract description 95
- 239000003566 sealing material Substances 0.000 claims abstract description 51
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 10
- 239000000945 filler Substances 0.000 claims description 8
- 238000002844 melting Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000002241 glass-ceramic Substances 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000006096 absorbing agent Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052878 cordierite Inorganic materials 0.000 claims description 4
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000174 eucryptite Inorganic materials 0.000 claims description 4
- 229910052642 spodumene Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 4
- 229910000166 zirconium phosphate Inorganic materials 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 3
- 229910000500 β-quartz Inorganic materials 0.000 claims description 3
- LEHFSLREWWMLPU-UHFFFAOYSA-B zirconium(4+);tetraphosphate Chemical compound [Zr+4].[Zr+4].[Zr+4].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LEHFSLREWWMLPU-UHFFFAOYSA-B 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 239000000843 powder Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 229910052845 zircon Inorganic materials 0.000 description 3
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- -1 zirconium phosphate compound Chemical class 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052849 andalusite Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
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Abstract
本發明提供一種氣密封裝之製造方法,可減少因雷射光之照射而於玻璃蓋內部產生之熱應力,抑制於玻璃蓋產生裂痕等。 本發明之氣密封裝之製造方法之特徵在於,其係製造利用玻璃蓋3將於內部搭載有元件5之容器1密封之氣密封裝之方法,且具備如下步驟:於容器1之內部搭載元件5;於容器1之框部2與玻璃蓋3之間配置密封材料6,且於容器1之框部2之上載置玻璃蓋3;一面沿著框部2掃描雷射光一面自玻璃蓋3側照射雷射光而將密封材料6加熱熔融形成密封材料層,利用密封材料層將玻璃蓋3與框部2密封;且自照射開始位置B開始雷射光之照射,然後掃描雷射光使該雷射光於框部2上環繞複數次以上,於位於較照射開始位置B靠掃描方向A側之照射結束位置C結束雷射光之照射。
Description
本發明係關於一種用以搭載並密封元件之氣密封裝之製造方法及氣密封裝。
先前,為了搭載並密封LED(Light-Emitting Diode,發光二極體)等元件,使用有氣密封裝。此種氣密封裝係藉由將可搭載元件之容器與用以將容器內密封之罩蓋構件接合而構成。 於下述之專利文獻1中,揭示有玻璃陶瓷基板與玻璃蓋經由密封材料接合而成之氣密封裝。於專利文獻1中,作為上述密封材料,使用包含低熔點玻璃之玻璃料。又,於專利文獻1中,藉由將上述玻璃料燒成並使之熔融,而將玻璃陶瓷基板與玻璃蓋接合。 然而,於搭載耐熱性較低之元件之情形時,若如專利文獻1般將玻璃料燒成並使之熔融,則存在因燒成時之加熱而元件特性熱劣化之虞。作為消除該情況之方法,考慮藉由對玻璃料照射雷射局部地進行加熱而將玻璃料熔融之方法。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2014-236202號公報
[發明所欲解決之問題] 藉由採用上述之利用雷射照射之密封,可防止所搭載之元件之熱劣化。又,由於構成氣密封裝之所有材料包含無機材料,故而亦可有效地防止因氧及水等之透過所致之劣化。 另一方面,為了一面維持氣密性,一面提高封裝強度,存在欲使玻璃蓋之厚度變大之要求。然而,本發明者等發現存在如下問題:若使玻璃蓋之厚度變大,則因利用雷射照射之加熱而於玻璃蓋內部之溫度差變大,因熱應力而於玻璃蓋產生裂痕。 本發明之目的在於提供一種可降低藉由雷射光之照射而於玻璃蓋內部產生之熱應力,抑制於玻璃蓋產生裂痕等之氣密封裝之製造方法及氣密封裝。 [解決問題之技術手段] 本發明之製造方法之特徵在於,其係製造利用玻璃蓋將於內部搭載有元件之容器密封之氣密封裝之方法,且具備如下步驟:於容器之內部搭載元件;於容器之框部與玻璃蓋之間配置密封材料,且於容器之框部之上載置玻璃蓋;及一面沿著框部掃描雷射光一面自玻璃蓋側照射雷射光將密封材料加熱熔融形成密封材料層,利用密封材料層將玻璃蓋與框部密封;且自照射開始位置開始雷射光之照射,然後掃描雷射光使該雷射光於框部上環繞複數次以上,於位於較照射開始位置靠掃描方向側之照射結束位置結束雷射光之照射。 於本發明中,較佳為,照射開始位置與照射結束位置之間之距離為雷射光之照射光點之半徑以上。 較佳為,以每1秒0.1次~100次照射框部上之同一部位之速度掃描雷射光。 較佳為,與掃描方向大致垂直之方向之密封材料之寬度為雷射光的照射光點之寬度之90%以下。 較佳為,容器包含陶瓷、玻璃陶瓷、或玻璃。 較佳為,密封材料包含玻璃料。 較佳為,密封材料含有低膨脹耐火性填料,該低膨脹耐火性填料包含選自堇青石、矽鋅礦、氧化鋁、磷酸鋯系化合物、鋯石、氧化鋯、氧化錫、石英玻璃、β-石英固溶體、β-鋰霞石、及鋰輝石之至少1種。 較佳為,密封材料含有雷射吸收材,該雷射吸收材包含選自Cu系氧化物、Fe系氧化物、Cr系氧化物、Mn系氧化物及該等之複合氧化物之至少1種。 本發明之氣密封裝之特徵在於具備:元件,其使用上限溫度為350℃以下;容器,其於內部搭載元件;玻璃蓋,其具有超過0.2 mm之厚度,且密封容器;及密封材料層,其配置於容器之密封部與玻璃蓋之間;且密封材料層包含含有雷射吸收材之玻璃。 較佳為,密封材料層包含低膨脹耐火性填料,該低膨脹耐火性填料包含選自堇青石、矽鋅礦、氧化鋁、磷酸鋯系化合物、鋯石、氧化鋯、氧化錫、石英玻璃、β-石英固溶體、β-鋰霞石、及鋰輝石之至少1種。 元件例如為MEMS(Micro Electro Mechanical Systems,微機電系統)或深紫外線LED。 [發明之效果] 根據本發明之製造方法,可降低藉由雷射光之照射而於玻璃蓋內部產生之熱應力,抑制玻璃蓋產生裂痕等。 本發明之氣密封裝具有優異之氣密性及封裝強度。
以下,對較佳之實施形態進行說明。但是,以下之實施形態為單純之例示,本發明並不限定於以下之實施形態。又,有於各圖式中實質上具有相同功能之構件以相同之符號參照之情形。 圖1係表示本發明之一實施形態之氣密封裝之模式性剖視圖。如圖1所示,本實施形態之氣密封裝10具備:容器1,其於內部搭載元件5;玻璃蓋3,其密封容器1;及密封材料層4,其配置於容器1之框部2與玻璃蓋3之間。藉由利用密封材料層4將框部2之上表面2a與玻璃蓋3接合,而形成容器1被玻璃蓋3密封而氣密之構造。 作為構成玻璃蓋3之玻璃,例如,可使用SiO2
-B2
O3
-RO(R為Mg、Ca、Sr或Ba)系玻璃、SiO2
-B2
O3
-R'2
O(R'為Li、Na或Ka)系玻璃、SiO2
-B2
O3
-RO-R'2
O系玻璃、SnO-P2
O5
系玻璃、TeO2
系玻璃或Bi2
O3
系玻璃等。 玻璃蓋3之厚度於本發明中並不特別限定,但一般而言,使用0.01 mm~2.0 mm之範圍內者。若玻璃蓋3之厚度超過0.2 mm,則雷射照射之熱應力變大,容易產生裂痕。因此,若玻璃蓋3之厚度超過0.2 mm,則更容易發揮本發明之效果。又,藉由玻璃蓋3具有超過0.2 mm之厚度,可提高封裝強度。玻璃蓋3之厚度進而較佳為0.3 mm以上,更佳為0.4 mm以上。 容器1例如包含陶瓷、玻璃陶瓷、或玻璃等。作為陶瓷,可列舉氧化鋁、氮化鋁、氧化鋯、富鋁紅柱石等。作為玻璃陶瓷,可列舉LTCC(Low Temperature Co-fired Ceramics,低溫共燒陶瓷)等。作為LTCC之具體例,可列舉氧化鈦或氧化鈮等之無機粉末與玻璃粉末之燒結體等。作為玻璃粉末,例如可使用與玻璃蓋3相同之玻璃。 作為用以形成密封材料層4之密封材料6,較佳為使用包含低熔點玻璃粉末之玻璃料。於包含低熔點玻璃粉末之情形時,可以更低溫使密封材料熔融,從而可更進一步抑制元件之熱劣化。作為低熔點玻璃粉末,例如,可使用Bi2
O3
系玻璃粉末、SnO-P2
O5
系玻璃粉末、V2
O5
-TeO2
系玻璃粉末等。再者,為了使雷射光之吸收提高,亦可於玻璃中包含選自CuO、Cr2
O3
、Fe2
O3
、MnO2
等之至少1種之顏料。又,於密封材料中,除了上述低熔點玻璃粉末以外,亦可包含低膨脹耐火性填料、雷射光吸收材等。作為低膨脹耐火性填料,例如可列舉堇青石、矽鋅礦、氧化鋁、磷酸鋯系化合物、鋯石、氧化鋯、氧化錫、石英玻璃、β-石英固溶體、β-鋰霞石、鋰輝石。又,作為雷射光吸收材,例如,可列舉選自Cu、Fe、Cr、Mn等之至少1種之金屬或包含該金屬之氧化物等之化合物。雷射光吸收材尤佳為包含選自Cu系氧化物、Fe系氧化物、Cr系氧化物、Mn系氧化物及該等之複合氧化物之至少1種。 元件5於本發明中並不特別限定,根據本發明之製造方法,即便為耐熱性較低之元件,亦可抑制封裝時之熱劣化,故而於利用使用上限溫度較低之元件之情形時,更容易發揮本發明之效果。又,根據本發明,即便為了提高氣密封裝10之強度而使玻璃蓋3之厚度變大,亦可設為氣密性較高之封裝。因此,於使用要求較高之強度與氣密性之元件之情形時,更容易發揮本發明之效果。因此,於利用使用上限溫度較低、且要求較高之氣密性之元件作為元件5之情形時,更容易發揮本發明之效果。作為此種元件,可列舉MEMS(Micro Electro Mechanical Systems)、深紫外線LED(Light Emitting Diode)等。 因此,作為使用上限溫度為350℃以下之元件,可列舉上述MEMS及深紫外線LED。再者,元件之使用上限溫度係針對每一元件作為標準來規定之溫度,係亦稱為動作上限溫度、最高使用溫度等之溫度。 然而,元件5並不限定於上述者,亦可使用上述以外之LED、LD(Laser Diode,雷射二極體)等發光元件、CCD(Charge Coupled Device,電荷耦合器件)等受光元件、其他元件。 圖2係用以說明製造圖1所示之氣密封裝之步驟之模式性剖視圖。於本實施形態之製造方法中,首先,如圖2(a)所示,於容器1之內部搭載元件5。圖3係用以說明圖2(a)所示之氣密封裝之製造步驟之模式性俯視圖。如圖3所示,於本實施形態中,框部2具有矩形形狀。 其次,如圖2(b)所示,於框部2之上表面2a之上塗佈密封材料6。圖4係用以說明圖2(b)所示之氣密封裝之製造步驟之模式性俯視圖。如圖4所示,密封材料6係沿著框部2之形狀塗佈於框部2之上表面2a之上。 其次,如圖2(c)所示,於塗佈有密封材料6之框部2之上載置玻璃蓋3。藉此,可於框部2之上表面2a與玻璃蓋3之間配置密封材料6。 圖5係表示將雷射光照射至密封材料之狀態之模式性剖視圖。如圖5所示,對配置於框部2之上表面2a與玻璃蓋3之間之密封材料6照射雷射光20,而將密封材料6加熱熔融。此時,如圖4所示,一面將雷射光20之照射光點21沿著框部2於掃描方向A掃描一面將密封材料6加熱熔融。與掃描方向A大致垂直之方向之密封材料6之寬度W較佳為雷射光20之照射光點21之寬度d之90%以下,更佳為10%~80%之範圍內。藉此,可將密封材料6於寬度方向均勻地加熱熔融。 圖6係用以說明本實施形態中之雷射光之照射開始位置及照射結束位置之模式性俯視圖。於本實施形態中,自照射開始位置B開始雷射光之照射,然後將雷射光沿著框部2於掃描方向A掃描,使雷射光於框部2上環繞複數次以上之特定次數,於照射結束位置C結束雷射光之照射。照射結束位置C位於較照射開始位置B靠掃描方向A側。因此,於照射開始位置B與照射結束位置C之間,較特定次數多1次地照射雷射光。 於本實施形態中,使雷射光於框部2上環繞複數次以上之特定次數。因此,只要藉由使雷射光於框部2上之同一部位照射複數次以上之特定次數,而將密封材料6加熱熔融即可。因此,與利用1次之雷射光之照射而將密封材料6加熱熔融之情形時相比,可以較低之輸出照射雷射光。因此,可使藉由雷射光之照射而於玻璃蓋3之內部產生之溫度差變小。因此,根據本實施形態,可減少玻璃蓋3內部之溫度差,從而可減少於玻璃蓋3內部產生之熱應力,抑制玻璃蓋3產生裂痕等。再者,為了使玻璃蓋3內部之溫度差更加減少,減少於玻璃蓋3內部產生之熱應力,抑制玻璃蓋3產生裂痕等,環繞雷射光之次數較佳為3次以上,更佳為10次以上。但是,若環繞雷射光之次數變多,則雷射光之照射時間變長而生產效率降低,故而較佳為100次以下。 若玻璃蓋3之厚度變大,則於玻璃蓋3之內部產生之溫度差亦變大。因此,一般而言,若玻璃蓋3之厚度變大則容易產生裂痕等,但根據本發明,即便使玻璃蓋3之厚度變大,亦可抑制裂痕等之產生。 於本實施形態中,雷射光之輸出較佳為3 W~30 W之範圍,進而較佳為3 W~10 W之範圍。藉由設為此種範圍,可更有效地抑制於玻璃蓋3產生裂痕等。 於本實施形態中,較佳為,以每1秒0.1次~100次照射框部2上之同一部位之速度掃描雷射光。藉由一面掃描雷射光一面於框部2上照射複數次,可於玻璃蓋3之面方向逐漸使溫度上升。因此,亦可減少玻璃蓋3之面方向之溫度差。因此,可更有效地抑制裂痕等之產生。雷射光之掃描速度更佳為每1秒10次~50次照射框部2上之同一部位之速度。 雷射光之波長只要為可對密封材料6進行加熱之波長則並不特別限定。自減少藉由雷射光照射而產生之玻璃蓋3內部之溫度差之觀點而言,雷射光之波長較佳為玻璃蓋3中之吸收較小。自此種觀點而言,雷射光之波長較佳為600~1600 nm之範圍內。作為出射此種雷射光之光源,例如較佳地使用半導體雷射。 圖7係將雷射光之照射開始位置及照射結束位置放大表示之模式性俯視圖。如圖7所示,雷射光之照射開始位置B與雷射光之照射結束位置C之間之距離D較佳為雷射光之照射光點21之半徑r以上。照射開始位置B之附近存在雷射光之照射不充分而未被充分加熱之虞。於本實施形態中,藉由於通過照射開始位置B之位置設定照射結束位置C,而於此間之區域較特定次數多1次地照射雷射光,以不產生加熱不充分之部位。藉由使照射開始位置B與照射結束位置C之間之距離D為雷射光之照射光點21之半徑r以上,而更確實地不產生加熱不充分之部位。照射開始位置B與照射結束位置C之間之距離D更佳為照射光點21之半徑r之1倍~10倍之範圍。 於本實施形態中,使雷射光於框部2上環繞複數次以上之特定次數。既可使來自同一光源之同一雷射光環繞,亦可使來自複數個光源之不同雷射光環繞。於使來自複數個光源之雷射光環繞之情形時,各雷射光之照射區域較佳為於環繞長度上以等間隔隔開。於使用複數個光源之情形時,各雷射光之波長或照射區域未必需要相同,亦可互相不同。例如,於照射區域之情形時,亦可於相對於掃描方向大致垂直之方向各照射區域錯開。又,亦能以照射區域之一方變寬,另一方變窄之方式設定。 於上述實施形態中,於框部2側塗佈有密封材料6,但亦可於玻璃蓋3側塗佈密封材料6。又,亦可於框部2側與玻璃蓋3側之兩者塗佈密封材料6。
1‧‧‧容器
2‧‧‧框部
2a‧‧‧上表面
3‧‧‧玻璃蓋
4‧‧‧密封材料層
5‧‧‧元件
6‧‧‧密封材料
10‧‧‧氣密封裝
20‧‧‧雷射光
21‧‧‧雷射光之照射光點
A‧‧‧掃描方向
B‧‧‧照射開始位置
C‧‧‧照射結束位置
D‧‧‧距離
W‧‧‧密封材料之寬度
d‧‧‧雷射光之照射光點之寬度
r‧‧‧雷射光之照射光點之半徑
圖1係表示本發明之一實施形態之氣密封裝之模式性剖視圖。 圖2(a)~(c)係用以說明製造圖1所示之氣密封裝之步驟之模式性剖視圖。 圖3係用以說明圖2(a)所示之氣密封裝之製造步驟之模式性俯視圖。 圖4係用以說明圖2(b)所示之氣密封裝之製造步驟之模式性俯視圖。 圖5係表示將雷射光照射至密封材料之狀態之模式性剖視圖。 圖6係用以說明本實施形態中之雷射光之照射開始位置及照射結束位置之模式性俯視圖。 圖7係將雷射光之照射開始位置及照射結束位置放大表示之模式性俯視圖。
1‧‧‧容器
2‧‧‧框部
2a‧‧‧上表面
3‧‧‧玻璃蓋
4‧‧‧密封材料層
5‧‧‧元件
10‧‧‧氣密封裝
Claims (7)
- 一種氣密封裝之製造方法,其係製造利用玻璃蓋將於內部搭載有元件之容器密封之氣密封裝之方法,且具備如下步驟:於上述容器之內部搭載上述元件;於上述容器之框部與上述玻璃蓋之間配置密封材料,於上述容器之上述框部之上載置上述玻璃蓋;及一面沿著上述框部掃描雷射光一面自上述玻璃蓋側照射上述雷射光而將上述密封材料加熱熔融形成密封材料層,利用上述密封材料層將上述玻璃蓋與上述框部密封;自照射開始位置開始上述雷射光之照射,然後掃描上述雷射光使該雷射光於上述框部上環繞複數次以上,於位於較上述照射開始位置靠掃描方向側之照射結束位置結束上述雷射光之照射;且以每1秒0.1次~100次照射上述框部上之同一部位之速度掃描上述雷射光,但每1秒0.167次以下之速度除外。
- 如請求項1之氣密封裝之製造方法,其中上述照射開始位置與上述照射結束位置之間之距離為上述雷射光之照射光點之半徑以上。
- 如請求項1或2之氣密封裝之製造方法,其中與上述掃描方向大致垂直之方向之上述密封材料之寬度為上述雷射光的照射光點之寬度之90%以下。
- 如請求項1或2之氣密封裝之製造方法,其中上述容器包含陶瓷、玻璃陶瓷、或玻璃。
- 如請求項1或2之氣密封裝之製造方法,其中上述密封材料包含玻璃料。
- 如請求項1或2之氣密封裝之製造方法,其中上述密封材料含有低膨脹耐火性填料,該低膨脹耐火性填料包含選自堇青石、矽鋅礦、氧化鋁、磷酸鋯系化合物、鋯石、氧化鋯、氧化錫、石英玻璃、β-石英固溶體、β-鋰霞石、及鋰輝石之至少1種。
- 如請求項1或2之氣密封裝之製造方法,其中上述密封材料含有雷射吸收材,該雷射吸收材包含選自Cu系氧化物、Fe系氧化物、Cr系氧化物、Mn系氧化物及該等之複合氧化物之至少1種。
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