CN109155289A - 气密包装体的制造方法和气密包装体 - Google Patents
气密包装体的制造方法和气密包装体 Download PDFInfo
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- CN109155289A CN109155289A CN201780031968.2A CN201780031968A CN109155289A CN 109155289 A CN109155289 A CN 109155289A CN 201780031968 A CN201780031968 A CN 201780031968A CN 109155289 A CN109155289 A CN 109155289A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000001678 irradiating effect Effects 0.000 claims abstract description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 239000011358 absorbing material Substances 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000002241 glass-ceramic Substances 0.000 claims description 6
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052878 cordierite Inorganic materials 0.000 claims description 5
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- SDKTUKJXHDZWMB-UHFFFAOYSA-N phosphoric acid zirconium Chemical compound [Zr].P(O)(O)(O)=O SDKTUKJXHDZWMB-UHFFFAOYSA-N 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 5
- 229910001887 tin oxide Inorganic materials 0.000 claims description 5
- 229910052845 zircon Inorganic materials 0.000 claims description 5
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 5
- 229910000500 β-quartz Inorganic materials 0.000 claims description 5
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 229910052642 spodumene Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- LGERWORIZMAZTA-UHFFFAOYSA-N silicon zinc Chemical compound [Si].[Zn] LGERWORIZMAZTA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052844 willemite Inorganic materials 0.000 claims description 2
- 229910000174 eucryptite Inorganic materials 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 1
- 229910052611 pyroxene Inorganic materials 0.000 claims 1
- 238000002844 melting Methods 0.000 abstract description 12
- 238000010438 heat treatment Methods 0.000 abstract description 8
- 230000008018 melting Effects 0.000 abstract description 7
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 230000005764 inhibitory process Effects 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract description 2
- 239000000843 powder Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910003069 TeO2 Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910052664 nepheline Inorganic materials 0.000 description 1
- 239000010434 nepheline Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/20—Bonding
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- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
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- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
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- C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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Abstract
本发明提供一种气密包装体的制造方法,其能够降低由于激光的照射在玻璃盖内部产生的热应力,抑制在玻璃盖产生裂纹等。其是制造用玻璃盖3将内部搭载有元件5的容器1密封的气密包装体的方法,特征在于,包括:在容器1的内部搭载元件5的工序;在容器1的框部2和玻璃盖3之间配置封装材料6,在容器1的框部2上载置玻璃盖3的工序;和一边沿框部2扫描激光一边从玻璃盖3侧照射激光,将封装材料6加热熔融,形成封装材料层,用封装材料层将玻璃盖3和框部2封装的工序,从照射开始位置B开始激光的照射,此后扫描激光,在框部2上环绕多圈以上,在比照射开始位置B更靠扫描方向A侧的照射结束位置C结束激光的照射。
Description
技术领域
本发明涉及用于搭载元件并密封的气密包装体的制造方法和气密包装体。
背景技术
目前,为了搭载LED等的元件并密封,使用气密包装体。这样的气密包装体通过将能够搭载元件的容器和用于将容器内密封的罩部件接合来构成。
在下述的专利文献1中,公开了玻璃陶瓷基板和玻璃盖经由封装材料接合而成的气密包装体。专利文献1中,作为上述封装材料,使用由低熔点玻璃构成的玻璃料。另外,专利文献1中,通过对上述玻璃料进行烧制使其熔融,玻璃陶瓷基板和玻璃盖被接合。
但是,搭载耐热性低的元件时,如果如专利文献1那样对玻璃料进行烧制使其熔融,则担心由于烧制时的加热,元件特性发生热劣化。作为消除该问题的方法,可以考虑通过对玻璃料照射激光而局部地加热,使玻璃料熔融的方法。
现有技术文献
专利文献
专利文献1:日本特开2014-236202号公报
发明内容
发明要解决的技术问题
通过采用上述的利用激光照射的封装,能够防止搭载的元件的热劣化。另外,由于构成气密包装体的全部材料由无机材料构成,所以也能够有效地防止氧和水等的透过。
另一方面,为了边维持气密性边提高包装强度,要求增大玻璃盖的厚度。但是,本发明的发明人发现,存在如下的技术问题:如果增大玻璃盖的厚度,由于激光照射引起的加热,玻璃盖内部的温度差变大,由于热应力,在玻璃盖产生裂纹。
本发明的目的在于提供一种降低由于激光的照射在玻璃盖内部产生的热应力、抑制在玻璃盖产生裂纹等的气密包装体的制造方法和气密包装体。
用于解决技术问题的技术方案
本发明的制造方法是制造用玻璃盖将内部搭载有元件的容器密封的气密包装体的方法,该方法的特征在于,包括:在容器的内部搭载元件的工序;在容器的框部和玻璃盖之间配置封装材料,在容器的框部上载置玻璃盖的工序;一边沿框部扫描激光一边从玻璃盖侧照射激光,将封装材料加热熔融而形成封装材料层,用封装材料层将玻璃盖和框部封装的工序,从照射开始位置开始激光的照射,此后扫描激光,在框部上环绕多圈以上,在比照射开始位置更靠扫描方向侧的照射结束位置结束激光的照射。
在本发明中,照射开始位置与照射结束位置之间的距离优选为激光的照射点的半径以上。
优选以每1秒对框部上的同一部位照射0.1次~100次的速度扫描激光。
与扫描方向大致垂直的方向上的封装材料的宽度优选为激光的照射点的宽度的90%以下。
容器优选由陶瓷、玻璃陶瓷或玻璃构成。
封装材料优选由玻璃料构成。
优选封装材料含有低膨胀耐火性填料,该低膨胀耐火性填料包括选自堇青石、硅锌矿、氧化铝、磷酸锆系化合物、锆石、氧化锆、氧化锡、石英玻璃、β-石英固溶体、β-锂霞石和锂辉石中的至少1种。
优选封装材料含有激光吸收材料,该激光吸收材料包括选自Cu系氧化物、Fe系氧化物、Cr系氧化物、Mn系氧化物和它们的复合氧化物中的至少1种。
本发明的气密包装体的特征在于,包括:使用上限温度为350℃以下的元件;在内部搭载元件的容器;具有超过0.2mm的厚度,将容器密封的玻璃盖;和配置于容器的密封部和玻璃盖之间的封装材料层,封装材料层由含有激光吸收材料的玻璃构成。
优选封装材料层含有低膨胀耐火性填料,该低膨胀耐火性填料包括选自堇青石、硅锌矿、氧化铝、磷酸锆系化合物、锆石、氧化锆、氧化锡、石英玻璃、β-石英固溶体、β-锂霞石和锂辉石中的至少1种。
元件例如为MEMS或深紫外线LED。
发明的效果
利用本发明的制造方法,能够降低由于激光的照射在玻璃盖内部产生的热应力,抑制在玻璃盖产生裂纹等。
本发明的气密包装体具有优异的气密性和包装强度。
附图说明
图1是表示本发明的一个实施方式的气密包装体的示意剖面图。
图2是用于说明制造图1所示的气密包装体的工序的示意剖面图。
图3是用于说明图2(a)所示的气密包装体的制造工序的示意俯视图。
图4是用于说明图2(b)所示的气密包装体的制造工序的示意俯视图。
图5是表示使激光照射于封装材料的状态的示意剖面图。
图6是用于说明本实施方式中的激光的照射开始位置和照射结束位置的示意俯视图。
图7是将激光的照射开始位置和照射结束位置放大表示的示意俯视图。
具体实施方式
以下,对优选的实施方式进行说明。但是,以下的实施方式仅仅是例示,本发明不限定于以下的实施方式。另外,在各附图中,对实质上具有同一功能的部件有时使用同一符号。
图1是表示本发明的一个实施方式的气密包装体的示意剖面图。如图1所示,本实施方式的气密包装体10包括:在内部搭载元件5的容器1;将容器1密封的玻璃盖3;和配置于容器1的框部2与玻璃盖3之间的封装材料层4。通过用封装材料层4将框部2的上表面2a和玻璃盖3接合,容器1被玻璃盖3密封而形成气密结构。
作为构成玻璃盖3的玻璃,例如能够使用SiO2-B2O3-RO(R为Mg、Ca、Sr或Ba)系玻璃、SiO2-B2O3-R′2O(R′为Li、Na或Ka)系玻璃、SiO2-B2O3-RO-R′2O系玻璃、SnO-P2O5系玻璃、TeO2系玻璃或Bi2O3系玻璃等。
玻璃盖3的厚度在本发明中没有特别限定,一般而言,能够使用0.01mm~2.0mm的范围内的玻璃。玻璃盖3的厚度超过0.2mm时,激光照射时的热应力变大,变得容易产生裂纹。因此,玻璃盖3的厚度超过0.2mm时,更容易发挥本发明的效果。另外,通过使玻璃盖3具有超过0.2mm的厚度,能够提高包装强度。玻璃盖3的厚度进一步优选为0.3mm以上,更优选为0.4mm以上。
容器1例如由陶瓷、玻璃陶瓷或玻璃等构成。作为陶瓷,可以列举氧化铝、氮化铝、氧化锆、莫来石等。作为玻璃陶瓷,可以列举LTCC(低温共烧陶瓷,Low Temperature Co-fired Ceramics)等。作为LTCC的具体例,可以列举氧化钛、氧化铌等的无机粉末与玻璃粉末的烧结体等。作为玻璃粉末,例如能够使用与玻璃盖3同样的玻璃。
作为用于形成封装材料层4的封装材料6,优选使用含有低熔点玻璃粉末的玻璃料。含有低熔点玻璃粉末时,能够以更低温使封装材料熔融,能够进一步抑制元件的热劣化。作为低熔点玻璃粉末,例如能够使用Bi2O3系玻璃粉末、SnO-P2O5系玻璃粉末、V2O5-TeO2系玻璃粉末等。此外,为了提高激光的吸收,可以在玻璃中含有选自CuO、Cr2O3、Fe2O3、MnO2等中的至少1种颜料。另外,在封装材料中,除了上述的低熔点玻璃粉末以外,还可以含有低膨胀耐火性填料、激光吸收材料等。作为低膨胀耐火性填料,例如可以列举堇青石、硅锌矿、氧化铝、磷酸锆系化合物、锆石、氧化锆、氧化锡、石英玻璃、β-石英固溶体、β-锂霞石、锂辉石。另外,作为激光吸收材料,例如可以列举选自Cu、Fe、Cr、Mn等中的至少1种金属或含有该金属的氧化物等化合物。特别优选激光吸收材料包含选自Cu系氧化物、Fe系氧化物、Cr系氧化物、Mn系氧化物和它们的复合氧化物中的至少1种。
元件5在本发明中没有特别限定,采用本发明的制造方法,即使是耐热性低的元件,也能够抑制包装时的热劣化,因此,在使用使用上限温度低的元件时,更容易发挥本发明的效果。另外,根据本发明,即使为了提高气密包装体10的强度而增大玻璃盖3的厚度,也能够形成气密性高的包装体。因此,在使用要求高的强度和气密性的元件时,更容易发挥本发明的效果。因此,作为元件5,在使用使用上限温度低且要求高的气密性的元件时,变得更容易发挥本发明的效果。作为这样的元件,可以列举MEMS(微电子机械***,Micro ElectroMechanical Systems)、深紫外线LED(发光二极管,Light Emitting Diode)等。
因此,作为使用上限温度为350℃以下的元件,可以列举上述的MEMS和深紫外线LED。此外,元件的使用上限温度是对每个元件作为规格规定的温度,是又称作工作上限温度、最高使用温度等的温度。
但是,元件5不限定于上述元件,也能够使用上述以外的LED、LD(激光二极管,Laser Diode)等的发光元件、CCD(电荷耦合器件,Charge Coupled Device)等的受光元件、其它元件。
图2是用于说明制造图1所示的气密包装体的工序的示意剖面图。本实施方式的制造方法中,首先,如图2(a)所示,在容器1的内部搭载元件5。图3是用于说明图2(a)所示的气密包装体的制造工序的示意俯视图。如图3所示,在本实施方式中,框部2具有矩形形状。
接着,如图2(b)所示,在框部2的上表面2a上涂敷封装材料6。图4是用于说明图2(b)所示的气密包装体的制造工序的示意俯视图。如图4所示,沿着框部2的形状在框部2的上表面2a上涂敷封装材料6。
接着,如图2(c)所示,在涂敷有封装材料6的框部2上载置玻璃盖3。由此,能够在框部2的上表面2a与玻璃盖3之间配置封装材料6。
图5是表示使激光照射于封装材料的状态的示意剖面图。如图5所示,对配置于框部2的上表面2a和玻璃盖3之间的封装材料6照射激光20,将封装材料6加热熔融。此时,如图4所示,一边沿着框部2以扫描方向A扫描激光20的照射点21,一边使封装材料6加热熔融。与扫描方向A大致垂直的方向上的封装材料6的宽度W优选为激光20的照射点21的宽度d的90%以下,更优选在10%~80%的范围内。由此,能够使封装材料6在宽度方向上均匀地加热熔融。
图6是用于说明本实施方式中的激光的照射开始位置和照射结束位置的示意俯视图。本实施方式中,从照射开始位置B开始激光的照射,此后,将激光沿框部2以扫描方向A扫描,使激光在框部2上环绕多次以上的规定次数,在照射结束位置C结束激光的照射。照射结束位置C位于比照射开始位置B靠扫描方向A侧的位置。因此,对照射开始位置B与照射结束位置C之间,比规定次数多照射1次激光。
在本实施方式中,使激光在框部2上环绕多次以上的规定次数。因此,通过对框部2上的同一部位照射多次以上的规定次数的激光,使封装材料6加热熔融即可。因此,与通过1次的激光照射使封装材料6加热熔融的情况相比,能够以低输出照射激光。因此,能够使由激光的照射而在玻璃盖3的内部产生的温度差减小。因此,根据本实施方式,能够降低玻璃盖3内部的温度差,能够降低在玻璃盖3内部产生的热应力,能够抑制在玻璃盖3产生裂纹等。此外,为了进一步降低玻璃盖3内部的温度差、降低在玻璃盖3内部产生的热应力、抑制在玻璃盖3产生裂纹等,激光环绕的次数优选为3次以上,更优选为10次以上。但是,如果激光环绕的次数多,则激光的照射时间变长,生产效率降低,因此,优选为100次以下。
玻璃盖3的厚度变大时,在玻璃盖3的内部产生的温度差也变大。因此,一般而言,如果玻璃盖3的厚度变大则容易产生裂纹等,但是,根据本发明,即使增大玻璃盖3的厚度,也能够抑制裂纹等的产生。
在本实施方式中,激光的输出功率优选为3W~30W的范围,更优选为3W~10W的范围。通过设为这样的范围,能够更有效地抑制在玻璃盖3产生裂纹等。
在本实施方式中,优选以每1秒对框部2上的同一部位照射0.1次~100次的速度扫描激光。通过一边扫描激光一边对框部2上照射多次,能够在玻璃盖3的面方向上使温度缓缓上升。因此,也能够降低玻璃盖3在面方向上的温度差。因此,能够更有效地抑制裂纹等的产生。激光的扫描速度更优选为每1秒对框部2上的同一部位照射10次~50次的速度。
激光的波长只要是能够加热封装材料6的波长即可,没有特别限定。从降低由激光照射引起的玻璃盖3内部的温度差的观点考虑,激光的波长优选在玻璃盖3中吸收小的波长。从这样的观点考虑,优选激光的波长在600~1600nm的范围内。作为射出这样的激光的光源,例如优选使用半导体激光。
图7是将激光的照射开始位置和照射结束位置放大表示的示意俯视图。如图7所示,激光的照射开始位置B与激光的照射结束位置C之间的距离D优选为激光的照射点21的半径r以上。对照射开始位置B的附近而言,存在激光照射不充分从而无法充分加热的顾虑。在本实施方式中,通过在经过了照射开始位置B的位置设定照射结束位置C,在其之间的区域比规定次数多照射1次激光,以使得不产生加热不充分的部位。通过将照射开始位置B与照射结束位置C之间的距离D设为激光的照射点21的半径r以上,更可靠地使加热不充分部位不会产生。照射开始位置B与照射结束位置C之间的距离D更优选为照射点21的半径r的1倍~10倍的范围。
在本实施方式中,使激光在框部2上环绕多次以上的规定次数。可以使来自同一光源的同一激光环绕,也可以使来自多个光源的不同的激光环绕。使来自多个光源的激光环绕时,优选各个激光的照射区域在环绕长度上隔开等间隔。使用多个光源时,各个激光的波长和照射区域无需相同,可以相互不同。例如,关于照射区域,各个照射区域可以在相对于扫描方向大致垂直的方向上错开。另外,也可以设为照射区域的一侧宽而另一侧窄。
上述实施方式中,在框部2侧涂敷封装材料6,但是,也可以在玻璃盖3侧涂敷封装材料6。另外,也可以在框部2侧和玻璃盖3侧的双方涂敷封装材料6。
符号说明
1…容器
2…框部
2a…上表面
3…玻璃盖
4…封装材料层
5…元件
6…封装材料
10…气密包装体
20…激光
21…激光的照射点
A…扫描方向
B…照射开始位置
C…照射结束位置
D…距离
W…封装材料的宽度
d…激光的照射点的宽度
r…激光的照射点的半径
Claims (11)
1.一种气密包装体的制造方法,制造用玻璃盖将内部搭载有元件的容器密封的气密包装体,所述制造方法的特征在于,包括:
在所述容器的内部搭载所述元件的工序;
在所述容器的框部和所述玻璃盖之间配置封装材料,在所述容器的所述框部上载置所述玻璃盖的工序:和
一边沿所述框部扫描激光一边从所述玻璃盖侧照射所述激光,将所述封装材料加热熔融而形成封装材料层,用所述封装材料层将所述玻璃盖和所述框部封装的工序,
从照射开始位置开始所述激光的照射,此后扫描所述激光,在所述框部上环绕多圈以上,在比所述照射开始位置更靠扫描方向侧的照射结束位置结束所述激光的照射。
2.如权利要求1所述的气密包装体的制造方法,其特征在于:
所述照射开始位置与所述照射结束位置之间的距离为所述激光的照射点的半径以上。
3.如权利要求1或2所述的气密包装体的制造方法,其特征在于:
以每1秒对所述框部上的同一部位照射0.1次~100次的速度扫描所述激光。
4.如权利要求1~3中任一项所述的气密包装体的制造方法,其特征在于:
与所述扫描方向大致垂直的方向上的所述封装材料的宽度为所述激光的照射点的宽度的90%以下。
5.如权利要求1~4中任一项所述的气密包装体的制造方法,其特征在于:
所述容器由陶瓷、玻璃陶瓷或玻璃构成。
6.如权利要求1~5中任一项所述的气密包装体的制造方法,其特征在于:
所述封装材料由玻璃料构成。
7.如权利要求1~6中任一项所述的气密包装体的制造方法,其特征在于:
所述封装材料含有低膨胀耐火性填料,该低膨胀耐火性填料包括选自堇青石、硅锌矿、氧化铝、磷酸锆系化合物、锆石、氧化锆、氧化锡、石英玻璃、β-石英固溶体、β-锂霞石和锂辉石中的至少一种。
8.如权利要求1~7中任一项所述的气密包装体的制造方法,其特征在于:
所述封装材料含有激光吸收材料,该激光吸收材料包括选自Cu系氧化物、Fe系氧化物、Cr系氧化物、Mn系氧化物和它们的复合氧化物中的至少一种。
9.一种气密包装体,其特征在于,包括:
使用上限温度为350℃以下的元件;
在内部搭载所述元件的容器;
具有超过0.2mm的厚度,将所述容器密封的玻璃盖;和
配置于所述容器的密封部和所述玻璃盖之间的封装材料层,
所述封装材料层由含有激光吸收材料的玻璃构成。
10.如权利要求9所述的气密包装体,其特征在于:
所述封装材料层含有低膨胀耐火性填料,该低膨胀耐火性填料包括选自堇青石、硅锌矿、氧化铝、磷酸锆系化合物、锆石、氧化锆、氧化锡、石英玻璃、β-石英固溶体、β-锂霞石和锂辉石中的至少一种。
11.如权利要求9或10所述的气密包装体,其特征在于:
所述元件为MEMS或深紫外线LED。
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