TWI677529B - 環氧樹脂組成物、薄膜狀環氧樹脂組成物、硬化物及電子裝置 - Google Patents

環氧樹脂組成物、薄膜狀環氧樹脂組成物、硬化物及電子裝置 Download PDF

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Publication number
TWI677529B
TWI677529B TW104135807A TW104135807A TWI677529B TW I677529 B TWI677529 B TW I677529B TW 104135807 A TW104135807 A TW 104135807A TW 104135807 A TW104135807 A TW 104135807A TW I677529 B TWI677529 B TW I677529B
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TW
Taiwan
Prior art keywords
epoxy resin
resin composition
film
hydroxyl group
sealing
Prior art date
Application number
TW104135807A
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English (en)
Chinese (zh)
Other versions
TW201629147A (zh
Inventor
荻原弘邦
Hirokuni OGIHARA
野村豐
Yutaka Nomura
渡瀨裕介
Yusuke Watase
金子知世
Tomoyo Kaneko
鈴木雅彥
Masahiko Suzuki
鳥羽正也
Masaya Toba
藤本大輔
Daisuke Fujimoto
Original Assignee
日商日立化成股份有限公司
Hitachi Chemical Company, Ltd.
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Filing date
Publication date
Application filed by 日商日立化成股份有限公司, Hitachi Chemical Company, Ltd. filed Critical 日商日立化成股份有限公司
Publication of TW201629147A publication Critical patent/TW201629147A/zh
Application granted granted Critical
Publication of TWI677529B publication Critical patent/TWI677529B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/62—Alcohols or phenols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/20—Structure, shape, material or disposition of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/16—Applications used for films
    • C08L2203/162—Applications used for films sealable films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW104135807A 2015-02-03 2015-10-30 環氧樹脂組成物、薄膜狀環氧樹脂組成物、硬化物及電子裝置 TWI677529B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-019593 2015-02-03
JP2015019593 2015-02-03

Publications (2)

Publication Number Publication Date
TW201629147A TW201629147A (zh) 2016-08-16
TWI677529B true TWI677529B (zh) 2019-11-21

Family

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Family Applications (1)

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TW104135807A TWI677529B (zh) 2015-02-03 2015-10-30 環氧樹脂組成物、薄膜狀環氧樹脂組成物、硬化物及電子裝置

Country Status (5)

Country Link
JP (1) JP6508226B2 (ko)
KR (1) KR102378992B1 (ko)
CN (1) CN107207705B (ko)
TW (1) TWI677529B (ko)
WO (1) WO2016125350A1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6533399B2 (ja) * 2015-03-19 2019-06-19 日東電工株式会社 封止用シートおよびパッケージの製造方法
JP6815293B2 (ja) 2017-08-16 2021-01-20 信越化学工業株式会社 半導体封止用熱硬化性エポキシ樹脂シート、半導体装置、及びその製造方法
CN111033379A (zh) * 2017-08-28 2020-04-17 住友电木株式会社 负型感光性树脂组合物、半导体装置和电子设备
JP6800113B2 (ja) * 2017-08-28 2020-12-16 信越化学工業株式会社 繊維含有樹脂基板、封止後半導体素子搭載基板、封止後半導体素子形成ウエハ、封止後半導体素子搭載シート、半導体装置、及び半導体装置の製造方法
JP7268970B2 (ja) * 2018-07-03 2023-05-08 日東電工株式会社 封止用シートおよび電子素子装置の製造方法
KR20210038556A (ko) * 2018-08-03 2021-04-07 미쯔비시 케미컬 주식회사 적층체 및 에폭시 수지 시트의 제조 방법
JP6764149B1 (ja) * 2018-11-14 2020-09-30 ナガセケムテックス株式会社 硬化性樹脂組成物および硬化性シート
KR20220013361A (ko) * 2019-05-27 2022-02-04 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법 및 정제방법
KR102516292B1 (ko) * 2020-06-30 2023-03-31 (주)이녹스첨단소재 전자장치 제조용 절연필름

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009256626A (ja) * 2008-03-28 2009-11-05 Sekisui Chem Co Ltd エポキシ系樹脂組成物、プリプレグ、硬化体、シート状成形体、積層板および多層積層板
JP2010053334A (ja) * 2008-07-31 2010-03-11 Sekisui Chem Co Ltd エポキシ系樹脂組成物、プリプレグ、硬化体、シート状成形体、積層板及び多層積層板
WO2010035452A1 (ja) * 2008-09-24 2010-04-01 積水化学工業株式会社 樹脂組成物、硬化体及び積層体
JP2011021101A (ja) * 2009-07-15 2011-02-03 Ajinomoto Co Inc 樹脂組成物
JP2011089038A (ja) * 2009-10-22 2011-05-06 Ajinomoto Co Inc 樹脂組成物
JP2013153223A (ja) * 2008-02-27 2013-08-08 Ajinomoto Co Inc 多層プリント配線板の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616615A (ja) 1984-06-20 1986-01-13 Nippon Sheet Glass Co Ltd 屈折率分布型レンズ
JP4032514B2 (ja) * 1998-07-15 2008-01-16 日立化成工業株式会社 エポキシ樹脂組成物及び電子部品装置
JP2001127095A (ja) 1999-10-29 2001-05-11 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
JP2001214037A (ja) * 2000-01-31 2001-08-07 Dainippon Ink & Chem Inc エポキシ樹脂組成物
JP2001244372A (ja) 2000-03-01 2001-09-07 Seiko Epson Corp 半導体装置およびその製造方法
DE102006009789B3 (de) 2006-03-01 2007-10-04 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils aus einer Verbundplatte mit Halbleiterchips und Kunststoffgehäusemasse
JP5364078B2 (ja) * 2010-11-18 2013-12-11 日東電工株式会社 熱硬化性樹脂組成物硬化体の製法およびそれにより得られた硬化物
JP6123152B2 (ja) * 2010-12-08 2017-05-10 味の素株式会社 樹脂組成物
JP6171280B2 (ja) * 2012-07-31 2017-08-02 味の素株式会社 半導体装置の製造方法
JP5548792B2 (ja) * 2013-02-25 2014-07-16 新日鉄住金化学株式会社 多価ヒドロキシ樹脂、その製造方法、エポキシ樹脂組成物及びその硬化物
JP6217165B2 (ja) * 2013-06-20 2017-10-25 住友ベークライト株式会社 プライマー層付きプリプレグ、プライマー層付き金属箔、金属張積層板、プリント配線基板、半導体パッケージおよび半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013153223A (ja) * 2008-02-27 2013-08-08 Ajinomoto Co Inc 多層プリント配線板の製造方法
JP2009256626A (ja) * 2008-03-28 2009-11-05 Sekisui Chem Co Ltd エポキシ系樹脂組成物、プリプレグ、硬化体、シート状成形体、積層板および多層積層板
JP2010053334A (ja) * 2008-07-31 2010-03-11 Sekisui Chem Co Ltd エポキシ系樹脂組成物、プリプレグ、硬化体、シート状成形体、積層板及び多層積層板
WO2010035452A1 (ja) * 2008-09-24 2010-04-01 積水化学工業株式会社 樹脂組成物、硬化体及び積層体
JP2011021101A (ja) * 2009-07-15 2011-02-03 Ajinomoto Co Inc 樹脂組成物
JP2011089038A (ja) * 2009-10-22 2011-05-06 Ajinomoto Co Inc 樹脂組成物

Also Published As

Publication number Publication date
KR20170113571A (ko) 2017-10-12
TW201629147A (zh) 2016-08-16
JPWO2016125350A1 (ja) 2017-09-28
JP6508226B2 (ja) 2019-05-08
KR102378992B1 (ko) 2022-03-24
WO2016125350A1 (ja) 2016-08-11
CN107207705A (zh) 2017-09-26
CN107207705B (zh) 2019-11-01

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