TWI671577B - Pixel stucture and light-emitting panel using the same - Google Patents
Pixel stucture and light-emitting panel using the same Download PDFInfo
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Abstract
一種畫素結構,包含薄膜電晶體、絕緣層、輔助電極、第一電極、畫素定義層、電激發光結構以及第二電極。薄膜電晶體位於基底上。絕緣層位於薄膜電晶體上,且具有第一接觸洞。輔助電極以及第一電極形成於第一絕緣層上,其中第一電極藉由第一接觸洞與薄膜電晶體電性連接。畫素定義層位於輔助電極及第一電極上,且具有第一開口及第二開口。電激發光結構位於第一開口內。第二電極位於畫素定義層上,且藉由第二開口與輔助電極電性連接。 A pixel structure includes a thin film transistor, an insulating layer, an auxiliary electrode, a first electrode, a pixel definition layer, an electro-excitation light structure, and a second electrode. The thin film transistor is located on a substrate. The insulating layer is located on the thin film transistor and has a first contact hole. The auxiliary electrode and the first electrode are formed on the first insulating layer, and the first electrode is electrically connected to the thin film transistor through the first contact hole. The pixel definition layer is located on the auxiliary electrode and the first electrode, and has a first opening and a second opening. The electrically excited light structure is located in the first opening. The second electrode is located on the pixel definition layer, and is electrically connected to the auxiliary electrode through the second opening.
Description
本發明是有關於一種畫素結構以及應用其的發光面板。 The invention relates to a pixel structure and a light-emitting panel using the pixel structure.
隨著科技進步,發光二極體已經成為常見且廣泛應用於商業用途中的元件。以做為光源而言,發光二極體具有許多優點,包含能量消耗低、使用壽命長以及開關切換快速。也因此,傳統光源已經逐漸被發光二極體光源替代。 With the advancement of technology, light-emitting diodes have become common and widely used components in commercial applications. As a light source, light-emitting diodes have many advantages, including low energy consumption, long service life, and fast switching. Therefore, traditional light sources have been gradually replaced by light-emitting diode light sources.
另一方面,除了做為光源以外,由於發光二極體具有自發光(self-emissive)、高亮度、製程簡單等優點,發光二極體技術也已經開始導入至顯示技術中發展。例如,可利用不同顏色的發光二極體做為顯示面板的畫素,從而取代液晶材料。對此,使用發光二極體做為畫素的顯示面板也因為適於薄化產品厚度、適於製成大尺寸產品以及適於製成可撓曲性產品,其在電子產品類的市場方面有一定程度的發展潛能。也因此,將發光二極體應用至顯示技術已成為當前相關領域的重要發展目標。 On the other hand, in addition to being a light source, light-emitting diode technology has begun to be introduced into display technology due to its advantages such as self-emissive, high brightness, and simple process. For example, light emitting diodes of different colors can be used as pixels of the display panel, thereby replacing the liquid crystal material. In this regard, display panels using light-emitting diodes as pixels are also suitable for thinning product thicknesses, for making large-sized products, and for making flexible products, which are in the market of electronic products. Has a certain degree of development potential. Therefore, the application of light-emitting diodes to display technologies has become an important development goal in related fields.
本發明之一實施方式提供一種畫素結構,其中畫素結構包含薄膜電晶體、第一電極、輔助電極、電激發光結構以及第二電極。電激發光結構設置在第一電極與第二電極之間,並可透過第一電極與第二電極對其施加正偏壓致使發光,其中第一電極電性連接薄膜電晶體。輔助電極電性連接第二電極,其中第一電極與輔助電極可透過圖案化同一金屬層形成,從而降低製程對光罩數量的需求。輔助電極與第二電極可分別或共同連接至其供電端。藉由此配置,可增強第二電極的電流密度分布,從而防止畫素結構因電壓衰退所衍生之亮度不均的現象。 An embodiment of the present invention provides a pixel structure, wherein the pixel structure includes a thin film transistor, a first electrode, an auxiliary electrode, an electrically excited light structure, and a second electrode. The electro-excitation light structure is disposed between the first electrode and the second electrode, and a positive bias can be applied to the light through the first electrode and the second electrode to cause light emission. The first electrode is electrically connected to the thin film transistor. The auxiliary electrode is electrically connected to the second electrode, wherein the first electrode and the auxiliary electrode can be formed by patterning the same metal layer, thereby reducing the need for the number of photomasks in the manufacturing process. The auxiliary electrode and the second electrode may be connected to their power supply terminals separately or together. With this configuration, the current density distribution of the second electrode can be enhanced, thereby preventing the phenomenon of uneven brightness due to the voltage decay of the pixel structure.
本發明之一實施方式提供一種畫素結構,包含薄膜電晶體、絕緣層、輔助電極、第一電極、畫素定義層、電激發光結構以及第二電極。薄膜電晶體位於基底上。絕緣層位於薄膜電晶體上,且具有接觸洞。輔助電極以及第一電極形成於絕緣層上,其中第一電極藉由接觸洞與薄膜電晶體電性連接。畫素定義層位於輔助電極及第一電極上,且具有第一開口及第二開口。電激發光結構位於第一開口內。第二電極位於畫素定義層上,且藉由第二開口與輔助電極電性連接。 An embodiment of the present invention provides a pixel structure including a thin film transistor, an insulating layer, an auxiliary electrode, a first electrode, a pixel definition layer, an electro-optical light structure, and a second electrode. The thin film transistor is located on a substrate. The insulating layer is located on the thin film transistor and has a contact hole. The auxiliary electrode and the first electrode are formed on the insulating layer, and the first electrode is electrically connected to the thin film transistor through a contact hole. The pixel definition layer is located on the auxiliary electrode and the first electrode, and has a first opening and a second opening. The electrically excited light structure is located in the first opening. The second electrode is located on the pixel definition layer, and is electrically connected to the auxiliary electrode through the second opening.
於部分實施方式中,第二電極電性連接於第一電壓源,第一電壓源適於提供第一電壓,輔助電極電性連接於第二電壓源,第二電壓源適於提供第二電壓。 In some embodiments, the second electrode is electrically connected to the first voltage source, the first voltage source is adapted to provide the first voltage, the auxiliary electrode is electrically connected to the second voltage source, and the second voltage source is adapted to provide the second voltage .
於部分實施方式中,第二電壓小於第一電壓。 In some embodiments, the second voltage is less than the first voltage.
於部分實施方式中,輔助電極以及第一電極的材 料包含氧化銦錫、氧化銦鋅、金屬或其合金,且輔助電極以及第一電極具有相同材料。 In some embodiments, the material of the auxiliary electrode and the first electrode is The material includes indium tin oxide, indium zinc oxide, a metal or an alloy thereof, and the auxiliary electrode and the first electrode have the same material.
於部分實施方式中,畫素結構更包含輔助結構。輔助結構位於第二開口內,且位於第二電極及輔助電極之間。 In some embodiments, the pixel structure further includes an auxiliary structure. The auxiliary structure is located in the second opening and is located between the second electrode and the auxiliary electrode.
於部分實施方式中,電激發光結構包含發光層,而輔助結構包含電子傳輸層及電子注入層且不具有任何發光層。 In some embodiments, the electrically excited light structure includes a light emitting layer, and the auxiliary structure includes an electron transport layer and an electron injection layer and does not have any light emitting layer.
於部分實施方式中,輔助結構更包含電洞傳輸層及電洞注入層。 In some embodiments, the auxiliary structure further includes a hole transport layer and a hole injection layer.
於部分實施方式中,於第一開口內,第一電極與該第二電極之垂直距離為d1,於第二開口內,輔助電極與第二電極之垂直距離為d2,且d1>d2。 In some embodiments, the vertical distance between the first electrode and the second electrode is d1 in the first opening, and the vertical distance between the auxiliary electrode and the second electrode is d2 in the second opening, and d1> d2.
於部分實施方式中,輔助電極與第二電極電性連接於共通電壓源。 In some embodiments, the auxiliary electrode and the second electrode are electrically connected to a common voltage source.
本發明之一實施方式提供一種畫素結構,包含薄膜電晶體、絕緣層、第一電極、輔助電極、發光層以及第二電極。薄膜電晶體位於基底上,並具有源極。絕緣層位在薄膜電晶體上,並具有接觸洞。第一電極位在絕緣層上,並透過接觸洞電性連接源極。輔助電極位在絕緣層上。發光層設置在第一電極上。第二電極設置在輔助電極以及發光層上,其中第一電極與第二電極相隔第一間距d1,輔助電極與第二電極相隔第二間距d2,且d1>d2。 An embodiment of the present invention provides a pixel structure including a thin film transistor, an insulating layer, a first electrode, an auxiliary electrode, a light emitting layer, and a second electrode. The thin film transistor is located on a substrate and has a source. The insulating layer is located on the thin film transistor and has a contact hole. The first electrode is located on the insulation layer and is electrically connected to the source electrode through the contact hole. The auxiliary electrode is located on the insulating layer. The light emitting layer is disposed on the first electrode. The second electrode is disposed on the auxiliary electrode and the light-emitting layer, wherein the first electrode is separated from the second electrode by a first distance d1, and the auxiliary electrode is separated from the second electrode by a second distance d2, and d1> d2.
本發明之一實施方式提供一種發光面板,包含畫素結構以及輔助線,其中輔助線電性連接於輔助電極。 An embodiment of the present invention provides a light-emitting panel including a pixel structure and an auxiliary line, wherein the auxiliary line is electrically connected to the auxiliary electrode.
100A、100B、100C、100D‧‧‧發光面板 100A, 100B, 100C, 100D‧‧‧light-emitting panel
101‧‧‧基板 101‧‧‧ substrate
102‧‧‧金屬圖案層 102‧‧‧metal pattern layer
103‧‧‧緩衝層 103‧‧‧ buffer layer
104‧‧‧薄膜電晶體 104‧‧‧ thin film transistor
105‧‧‧第一閘極絕緣層 105‧‧‧First gate insulation
106‧‧‧第二閘極絕緣層 106‧‧‧Second gate insulation layer
108‧‧‧層間介電質層 108‧‧‧ Interlayer dielectric layer
109A‧‧‧第一通孔 109A‧‧‧First through hole
109B‧‧‧第二通孔 109B‧‧‧Second through hole
110A‧‧‧汲極電極 110A‧‧‧Drain electrode
110B‧‧‧源極電極 110B‧‧‧Source electrode
112‧‧‧絕緣層 112‧‧‧ Insulation
114‧‧‧接觸洞 114‧‧‧contact hole
120‧‧‧第一電極 120‧‧‧first electrode
122‧‧‧輔助電極 122‧‧‧Auxiliary electrode
124‧‧‧畫素定義層 124‧‧‧Pixel Definition Layer
126‧‧‧電激發光結構 126‧‧‧electrically excited light structure
128‧‧‧發光層 128‧‧‧Light-emitting layer
130‧‧‧第一開口 130‧‧‧ the first opening
132‧‧‧第二開口 132‧‧‧Second opening
134‧‧‧第二電極 134‧‧‧Second electrode
135‧‧‧輔助線 135‧‧‧Auxiliary line
136‧‧‧第一電子傳輸層 136‧‧‧first electron transport layer
138‧‧‧第一電子注入層 138‧‧‧first electron injection layer
140‧‧‧輔助結構 140‧‧‧ auxiliary structure
142‧‧‧第二電子傳輸層 142‧‧‧Second electron transport layer
144‧‧‧第二電子注入層 144‧‧‧Second electron injection layer
146‧‧‧第三電子傳輸層 146‧‧‧third electron transport layer
148‧‧‧第三電子注入層 148‧‧‧third electron injection layer
150‧‧‧第一電洞注入層 150‧‧‧first hole injection layer
152‧‧‧第一電洞傳輸層 152‧‧‧The first hole transmission layer
154‧‧‧第二電洞注入層 154‧‧‧Second hole injection layer
156‧‧‧第二電洞傳輸層 156‧‧‧Second hole transmission layer
158‧‧‧第三電洞注入層 158‧‧‧Third hole injection layer
160‧‧‧第三電洞傳輸層 160‧‧‧The third hole transmission layer
202‧‧‧第一電壓源 202‧‧‧first voltage source
204‧‧‧第二電壓源 204‧‧‧Second voltage source
206‧‧‧共通電壓源 206‧‧‧Common voltage source
1B-1B‧‧‧線段 1B-1B‧‧‧line segment
P‧‧‧畫素結構 P‧‧‧ pixel structure
G1‧‧‧第一閘極 G1‧‧‧first gate
G2‧‧‧第二閘極 G2‧‧‧Second gate
S‧‧‧源極區 S‧‧‧Source area
D‧‧‧汲極區 D‧‧‧ Drain
SC‧‧‧通道區 SC‧‧‧Channel area
S1、S2、S3、S4‧‧‧下表面 S1, S2, S3, S4‧‧‧ lower surface
d1、d2‧‧‧距離 d1, d2‧‧‧ distance
第1A圖為根據本發明的第一實施方式繪示發光面板的上視示意圖。 FIG. 1A is a schematic top view of a light emitting panel according to a first embodiment of the present invention.
第1B圖繪示沿著第1A圖的線段1B-1B的剖面示意圖。 FIG. 1B is a schematic cross-sectional view taken along line 1B-1B in FIG. 1A.
第1C圖繪示第1B圖的畫素結構被驅動時的示意圖。 FIG. 1C is a schematic diagram when the pixel structure of FIG. 1B is driven.
第2圖為根據本發明的第二實施方式繪示發光面板的剖面示意圖,且其剖面位置與第1B圖相同。 FIG. 2 is a schematic cross-sectional view illustrating a light-emitting panel according to a second embodiment of the present invention, and its cross-sectional position is the same as that of FIG. 1B.
第3圖為根據本發明的第三實施方式繪示發光面板的剖面示意圖,且其剖面位置與第1B圖相同。 FIG. 3 is a schematic cross-sectional view illustrating a light-emitting panel according to a third embodiment of the present invention, and its cross-sectional position is the same as that of FIG. 1B.
第4圖為根據本發明的第四實施方式繪示發光面板的上視示意圖。 FIG. 4 is a schematic top view of a light emitting panel according to a fourth embodiment of the present invention.
以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。另外,為了便於讀者觀看,圖式中各元件的尺寸並非依實際比例繪示。 In the following, a plurality of embodiments of the present invention will be disclosed graphically. For the sake of clarity, many practical details will be described in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventional structures and components will be shown in the drawings in a simple and schematic manner. In addition, for the convenience of the reader, the dimensions of the elements in the drawings are not drawn according to actual proportions.
請同時參考第1A圖以及第1B圖,第1A圖為根據本發明的第一實施方式繪示發光面板100A的上視示意圖,而 第1B圖繪示沿著第1A圖的線段1B-1B的剖面示意圖。發光面板100A可藉由發光二極體所發出的色光達到顯示影像的功能。發光面板包含基板101、畫素結構P、第一電壓源202以及第二電壓源204,其中畫素結構P位在基板101上,即基板101可視為畫素結構P的基底。 Please refer to FIG. 1A and FIG. 1B together. FIG. 1A is a schematic top view illustrating a light-emitting panel 100A according to a first embodiment of the present invention, and FIG. 1B is a schematic cross-sectional view taken along line 1B-1B in FIG. 1A. The light-emitting panel 100A can achieve the function of displaying an image by the color light emitted by the light-emitting diode. The light-emitting panel includes a substrate 101, a pixel structure P, a first voltage source 202, and a second voltage source 204. The pixel structure P is located on the substrate 101, that is, the substrate 101 can be regarded as the base of the pixel structure P.
畫素結構P包含金屬圖案層102、緩衝層103、薄膜電晶體104、第一閘極絕緣層105、第二閘極絕緣層106、層間介電質層108、汲極電極110A、源極電極110B、絕緣層112、第一電極120、輔助電極122、電激發光結構126、畫素定義層124以及第二電極134。 The pixel structure P includes a metal pattern layer 102, a buffer layer 103, a thin film transistor 104, a first gate insulating layer 105, a second gate insulating layer 106, an interlayer dielectric layer 108, a drain electrode 110A, and a source electrode. 110B, an insulating layer 112, a first electrode 120, an auxiliary electrode 122, an electro-excitation light structure 126, a pixel definition layer 124, and a second electrode 134.
金屬圖案層102、緩衝層103以及薄膜電晶體104位於基板101上,其中緩衝層103覆蓋金屬圖案層102,而薄膜電晶體104位在緩衝層103上。金屬圖案層102可提供遮光效果予薄膜電晶體104。舉例來說,當基板101選用具有透光性材料的時候,像是玻璃基板,金屬圖案層102可遮蔽自基板101往薄膜電晶體104行進的光線,從而防止薄膜電晶體104因光漏電效應產生負面影響。 The metal pattern layer 102, the buffer layer 103, and the thin film transistor 104 are located on the substrate 101. The buffer layer 103 covers the metal pattern layer 102, and the thin film transistor 104 is located on the buffer layer 103. The metal pattern layer 102 can provide a light shielding effect to the thin film transistor 104. For example, when the substrate 101 is made of a translucent material, such as a glass substrate, the metal pattern layer 102 can shield the light traveling from the substrate 101 to the thin film transistor 104, thereby preventing the thin film transistor 104 from being caused by the light leakage effect. Negative impact.
本實施方式的薄膜電晶體104為雙閘型電晶體,其包含第一閘極G1、第二閘極G2、源極區S、汲極區D以及通道區SC。源極區S、汲極區D以及通道區SC位在緩衝層103上且其可由同一層體形成。源極區S、汲極區D以及通道區SC係可藉由擴散製程調整此同一層體的載子濃度來定義。第一閘極絕緣層105以及第一閘極G1位在通道區SC上。第二閘極絕緣層106覆蓋源極區S、汲極區D、第一閘極絕緣層105以及第一 閘極G1,而第二閘極G2位在第二閘極絕緣層106上。 The thin film transistor 104 of this embodiment is a double-gate transistor, which includes a first gate G1, a second gate G2, a source region S, a drain region D, and a channel region SC. The source region S, the drain region D, and the channel region SC are located on the buffer layer 103 and can be formed from the same layer body. The source region S, the drain region D, and the channel region SC can be defined by adjusting the carrier concentration of the same layer body by a diffusion process. The first gate insulating layer 105 and the first gate G1 are located on the channel region SC. The second gate insulating layer 106 covers the source region S, the drain region D, the first gate insulating layer 105, and the first The gate G1 and the second gate G2 are located on the second gate insulating layer 106.
上述的薄膜電晶體104的結構僅為範例,本實施方式的薄膜電晶體104除了上述結構之外,也可運用其它類型的電晶體,像是雙閘型電晶體之變形、底閘型電晶體或其變形、頂閘型電晶體或其變形或其它合適的電晶體。此外,通道區SC的材料也可為單層或多層結構,且其材料包含非晶矽、單晶矽、微晶矽、多晶矽、有機半導體材料、氧化物半導體材料、奈米碳管或其它合適的材料。 The structure of the thin-film transistor 104 described above is merely an example. In addition to the above-mentioned structure, the thin-film transistor 104 of the present embodiment can also use other types of transistors, such as a deformation of a double-gate transistor and a bottom-gate transistor. Or its deformation, top-gate transistor or its deformation or other suitable transistor. In addition, the material of the channel region SC may also be a single layer or a multilayer structure, and the material includes amorphous silicon, single crystal silicon, microcrystalline silicon, polycrystalline silicon, organic semiconductor materials, oxide semiconductor materials, nano carbon tubes, or other suitable materials. s material.
層間介電質層108位在緩衝層103以及第二閘極絕緣層106上,並覆蓋薄膜電晶體104,而汲極電極110A與源極電極110B位在層間介電質層108上,其中層間介電質層108可與第二閘極絕緣層106共同具有第一通孔109A與第二通孔109B,以使汲極電極110A與源極電極110B可分別透過第一通孔109A與第二通孔109B電性連接薄膜電晶體104的汲極區D與源極區S。此外,層間介電質層108的材料包含可無機材料,例如氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述之組合。 The interlayer dielectric layer 108 is located on the buffer layer 103 and the second gate insulating layer 106 and covers the thin film transistor 104, and the drain electrode 110A and the source electrode 110B are located on the interlayer dielectric layer 108, among which the interlayer The dielectric layer 108 and the second gate insulating layer 106 may have first through holes 109A and second through holes 109B, so that the drain electrode 110A and the source electrode 110B can pass through the first through holes 109A and the second The through hole 109B is electrically connected to the drain region D and the source region S of the thin film transistor 104. In addition, the material of the interlayer dielectric layer 108 includes an inorganic material, such as silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a combination thereof.
絕緣層112位在薄膜電晶體104、層間介電質層108、汲極電極110A以源極電極110B上,並具有接觸洞114,其中絕緣層112的材料可包含無機材料,例如氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述之組合。 The insulating layer 112 is located on the thin film transistor 104, the interlayer dielectric layer 108, the drain electrode 110A and the source electrode 110B, and has a contact hole 114. The material of the insulating layer 112 may include inorganic materials, such as silicon oxide, nitrogen, and the like. Silicon oxide, silicon oxynitride, other suitable materials, or a combination thereof.
第一電極120以及輔助電極122形成於絕緣層112上,其中第一電極120可藉由接觸洞114與源極電極110B電性連接薄膜電晶體104的源極區S。第一電極120與輔助電極 122可由同一層體形成並具有相同材料,例如其可透過圖案化同一金屬層而形成,且所形成的第一電極120與輔助電極122彼此係互相分離。由於第一電極120與輔助電極122可由同一層體形成,故其可經由同一道光罩製程完成圖案化,從而降低畫素結構P的製程對光罩數量的需求。形成第一電極120與輔助電極122的層體可包含透明導電材料,例如氧化銦錫、氧化銦鋅、氧化鋅、奈米碳管、氧化銦鎵鋅、或其它合適的材料。然而,本揭露內容不以此為限制,若發光面板100A的出光方向為向上(即出光方向大致與基板101指向絕緣層112的方向平行),則形成第一電極120與輔助電極122的層體也可包含非透明導電材料,例如是金屬、合金、或其它合適的材料,藉以提升第一電極120與輔助電極122的導電度。 The first electrode 120 and the auxiliary electrode 122 are formed on the insulating layer 112. The first electrode 120 can be electrically connected to the source region S of the thin film transistor 104 through the contact hole 114 and the source electrode 110B. First electrode 120 and auxiliary electrode 122 can be formed of the same layer and have the same material, for example, it can be formed by patterning the same metal layer, and the formed first electrode 120 and auxiliary electrode 122 are separated from each other. Since the first electrode 120 and the auxiliary electrode 122 can be formed from the same layer, they can be patterned through the same mask process, thereby reducing the number of masks required for the pixel structure P process. The layer forming the first electrode 120 and the auxiliary electrode 122 may include a transparent conductive material, such as indium tin oxide, indium zinc oxide, zinc oxide, carbon nanotubes, indium gallium zinc oxide, or other suitable materials. However, this disclosure is not limited to this. If the light emitting direction of the light-emitting panel 100A is upward (that is, the light emitting direction is substantially parallel to the direction in which the substrate 101 is directed to the insulating layer 112), a layered body of the first electrode 120 and the auxiliary electrode 122 is formed. Non-transparent conductive materials may also be included, such as metals, alloys, or other suitable materials, so as to improve the conductivity of the first electrode 120 and the auxiliary electrode 122.
畫素定義層124位於第一電極120與輔助電極122上,並具有第一開口130及第二開口132,其中在俯視畫素結構P的情況下(即例如第1A圖的視角),第一開口130的尺寸可大於第二開口132的尺寸,或是說,於俯視畫素結構P的情況下,位在第一開口130下方的第一電極120的面積會大於位在第二開口132下方的輔助電極122的面積。畫素定義層124的材料可包含無機材料,例如氧化矽、氮化矽、氮氧化矽、其它合適的材料、或上述之組合。 The pixel definition layer 124 is located on the first electrode 120 and the auxiliary electrode 122 and has a first opening 130 and a second opening 132. When the pixel structure P is viewed from the top (ie, for example, the viewing angle of FIG. 1A), the first The size of the opening 130 may be larger than the size of the second opening 132. Or, when the pixel structure P is viewed from above, the area of the first electrode 120 located below the first opening 130 is larger than that of the second electrode 132. Area of the auxiliary electrode 122. The material of the pixel definition layer 124 may include an inorganic material, such as silicon oxide, silicon nitride, silicon oxynitride, other suitable materials, or a combination thereof.
電激發光結構126位於第一開口130內,並接觸第一電極120,且電激發光結構126可透過被施加正偏壓而致使發光。舉例來說,電激發光結構126可包含發光層128,其中發光層128可包含有機材料,並可藉由電子與電洞的複合機制 來發光。發光層128可透過沉積的方式形成在第一開口130內,且發光層128的沉積位置未位在第二開口132內。然而,本揭露內容不以此為限,發光層128也可透過其他的方式形成,例如像是透過噴墨印刷或蒸鍍的方式來形成。 The electrically excited light structure 126 is located in the first opening 130 and contacts the first electrode 120. The electrically excited light structure 126 can emit light by being applied with a positive bias. For example, the electro-excitation light structure 126 may include a light-emitting layer 128, where the light-emitting layer 128 may include an organic material, and may be combined by a mechanism of electrons and holes. Come glow. The light emitting layer 128 can be formed in the first opening 130 through a deposition method, and the deposition position of the light emitting layer 128 is not located in the second opening 132. However, the disclosure is not limited thereto, and the light-emitting layer 128 may also be formed by other methods, such as by inkjet printing or vapor deposition.
第二電極134位於畫素定義層124上,並分別藉由第一開口130與第二開口132電性連接電激發光結構126與輔助電極122。具體而言,第二電極134會延伸至第一開口130內以及延伸至第二開口132內。在第一開口130內,第二電極134會直接接觸電激發光結構126,即第二電極134會直接接觸發光層128,而在第二開口132內,第二電極134則會直接接觸輔助電極122。第二電極134的材料可包含透明導電材料或非透明導電材料,其中透明導電材料例如是氧化銦錫、氧化銦鋅、氧化鋅、奈米碳管、氧化銦鎵鋅、或其它合適的材料,而非透明導電材料則例如是金屬、合金、或其它合適的材料。 The second electrode 134 is located on the pixel definition layer 124 and electrically connects the electrically excited light structure 126 and the auxiliary electrode 122 through the first opening 130 and the second opening 132, respectively. Specifically, the second electrode 134 extends into the first opening 130 and into the second opening 132. In the first opening 130, the second electrode 134 directly contacts the electro-excitation light structure 126, that is, the second electrode 134 directly contacts the light emitting layer 128, and in the second opening 132, the second electrode 134 directly contacts the auxiliary electrode 122. The material of the second electrode 134 may include a transparent conductive material or a non-transparent conductive material, wherein the transparent conductive material is, for example, indium tin oxide, indium zinc oxide, zinc oxide, nanometer carbon tube, indium gallium zinc oxide, or other suitable materials. Non-transparent conductive materials are, for example, metals, alloys, or other suitable materials.
此外,由於發光層128的沉積位置位在第一開口130內但未位在第二開口132內,故第一開口130內的第二電極134相對第一電極120的高度會異於第二開口132內的第二電極134相對輔助電極122的高度。舉例來說,第一電極120的下表面S1接觸絕緣層112,且第一電極120的下表面S1至第一開口130內的第二電極134的下表面S2之垂直距離(或稱第一電極120的下表面S1與第二電極134的下表面S2之間的間距)為距離d1,而輔助電極122的下表面S3與絕緣層112接觸,且輔助電極122的下表面S3至第二開口132內的第二電極134的下表面S4之垂直距離(或稱輔助電極122的下表面S3與第二電極 134的下表面S4之間的間距)為距離d2,其中距離d1大於距離d2。 In addition, since the light-emitting layer 128 is deposited in the first opening 130 but not in the second opening 132, the height of the second electrode 134 in the first opening 130 relative to the first electrode 120 may be different from that of the second opening. The height of the second electrode 134 in the 132 relative to the auxiliary electrode 122. For example, the lower surface S1 of the first electrode 120 contacts the insulating layer 112, and the vertical distance from the lower surface S1 of the first electrode 120 to the lower surface S2 of the second electrode 134 in the first opening 130 (or the first electrode) The distance between the lower surface S1 of 120 and the lower surface S2 of the second electrode 134) is the distance d1, and the lower surface S3 of the auxiliary electrode 122 is in contact with the insulating layer 112, and the lower surface S3 of the auxiliary electrode 122 to the second opening 132 The vertical distance between the lower surface S4 of the second electrode 134 inside (or the lower surface S3 of the auxiliary electrode 122 and the second electrode The distance between the lower surfaces S4 of 134) is a distance d2, where the distance d1 is greater than the distance d2.
藉由上述配置,可降低畫素結構P因電壓衰退(IR drop)所產生的影響,從而防止發光面板100A發生亮度不均的狀況。舉例來說,請看到第1A圖,發光面板100A可更包含輔助線135,其中輔助線135電性連接各輔助電極122。輔助線135與輔助電極122可由同一層體形成,例如其可透過圖案化同一金屬層而形成。 With the above configuration, the influence of the pixel structure P due to IR drop can be reduced, thereby preventing the brightness unevenness of the light emitting panel 100A. For example, as shown in FIG. 1A, the light-emitting panel 100A may further include auxiliary lines 135, wherein the auxiliary lines 135 are electrically connected to the auxiliary electrodes 122. The auxiliary line 135 and the auxiliary electrode 122 may be formed from the same layer, for example, they may be formed by patterning the same metal layer.
第二電極134可電性連接於第一電壓源202。第一電壓源202適於提供第一電壓予第二電極134,即第一電壓源202可視做為第二電極134的供電端。於部分實施方式中,此供電端的設置位置與多個第一電極120與多個輔助電極122的設置位置係位於基板101(請見第1B圖)的同一側,藉以便於設計發光面板100A的邊框或走線。多個輔助電極122可透過輔助線135互相電性連接於彼此,並共同電性連接於第二電壓源204,其中第二電壓源204適於提供第二電壓予輔助電極122,即第二電壓源204可視作為輔助電極122的供電端。第二電壓可小於第一電壓。 The second electrode 134 can be electrically connected to the first voltage source 202. The first voltage source 202 is adapted to provide a first voltage to the second electrode 134, that is, the first voltage source 202 can be regarded as a power supply terminal of the second electrode 134. In some embodiments, the position of the power supply terminal and the positions of the plurality of first electrodes 120 and the plurality of auxiliary electrodes 122 are located on the same side of the substrate 101 (see FIG. 1B), thereby facilitating the design of the frame of the light-emitting panel 100A. Or route. The plurality of auxiliary electrodes 122 can be electrically connected to each other through the auxiliary line 135 and are commonly electrically connected to the second voltage source 204. The second voltage source 204 is adapted to provide a second voltage to the auxiliary electrode 122, that is, the second voltage. The source 204 can be regarded as a power supply terminal of the auxiliary electrode 122. The second voltage may be less than the first voltage.
請再同時看到第1A圖以及第1C圖,其中第1C圖繪示第1B圖的畫素結構P的被驅動時的示意圖。第一電極120可透過驅動薄膜電晶體104而被施加驅動電壓,其中驅動電壓係大於第一電壓,即驅動電壓相對第一電壓為正,從而對電激發光結構126施加正偏壓。當電激發光結構126因此正偏壓導致發光的時候,第一電極120與第二電極134相對電激發光結 構126可視為其陽極以及陰極。此外,當透過第一電極120與第二電極134施加正偏壓予電激發光結構126的時候,自第二電極134的供電端流入第二電極134的電子流可如第1C圖的第一電子流E1所示。 Please see FIG. 1A and FIG. 1C at the same time. FIG. 1C shows a schematic diagram when the pixel structure P of FIG. 1B is driven. The first electrode 120 can be applied with a driving voltage through the driving thin film transistor 104, wherein the driving voltage is greater than the first voltage, that is, the driving voltage is positive relative to the first voltage, thereby applying a positive bias voltage to the electrically excited light structure 126. When the electrically excited light structure 126 is caused to emit light due to the positive bias, the first electrode 120 and the second electrode 134 are electrically excited to the light junction. Structure 126 can be considered as its anode and cathode. In addition, when a positive bias is applied to the electrically excited light structure 126 through the first electrode 120 and the second electrode 134, the flow of electrons flowing from the power-supply terminal of the second electrode 134 into the second electrode 134 can be the same as that in FIG. 1C. The electron flow E1 is shown.
另一方面,由於提供予輔助電極122的第二電壓小於提供予第二電極134的第一電壓,故可產生自輔助電極122流向第二電極134的第二電子流E2。對此,由於第一電子流E1以及第二電子流E2皆為流入第二電極134的電子流,故第一電子流E1與第二電子流E2可在第二電極134內匯集成第三電子流E3,藉以增加第二電極134內的電流密度,以降低畫素結構P因受到電壓衰退所產生的影響,從而防止發光面板100A產生亮度不均的問題。 On the other hand, since the second voltage supplied to the auxiliary electrode 122 is smaller than the first voltage supplied to the second electrode 134, a second electron current E2 flowing from the auxiliary electrode 122 to the second electrode 134 can be generated. In this regard, since the first electron flow E1 and the second electron flow E2 are both electron flows flowing into the second electrode 134, the first electron flow E1 and the second electron flow E2 can be collected into a third electron in the second electrode 134. The current E3 increases the current density in the second electrode 134 to reduce the influence of the pixel structure P due to the voltage decay, thereby preventing the brightness unevenness of the light-emitting panel 100A.
也就是說,經由形成輔助電極122並將第二電極134電性連接至輔助電極122,輔助電極122可透過其供電端匯入電子流至第二電極134,從而增加第二電極134內的電流密度,以降低因電壓衰退所產生的負面影響。 That is, by forming the auxiliary electrode 122 and electrically connecting the second electrode 134 to the auxiliary electrode 122, the auxiliary electrode 122 can import electrons to the second electrode 134 through its power supply terminal, thereby increasing the current in the second electrode 134. Density to reduce the negative effects of voltage decay.
請再看到第2圖,第2圖為根據本發明的第三實施方式繪示發光面板100B的剖面示意圖,且其剖面位置與第1B圖相同。本實施方式與第一實施方式的至少一個差異點在於,本實施方式的發光面板100B的畫素結構P更包含輔助結構140。輔助結構140位於第二開口132內,且位於輔助電極122及第二電極134之間。此外,畫素結構P的電激發光結構126更包含助於提升發光效率的層體。 Please see FIG. 2 again. FIG. 2 is a schematic cross-sectional view illustrating a light-emitting panel 100B according to a third embodiment of the present invention, and the cross-sectional position is the same as that of FIG. 1B. At least one difference between this embodiment and the first embodiment is that the pixel structure P of the light-emitting panel 100B of this embodiment further includes an auxiliary structure 140. The auxiliary structure 140 is located in the second opening 132 and is located between the auxiliary electrode 122 and the second electrode 134. In addition, the electrically excited light structure 126 of the pixel structure P further includes a layer body that helps to improve the light emitting efficiency.
具體來說,電激發光結構126更包含位於第一開 口130內的第一電子傳輸層136、第一電子注入層138、第一電洞注入層150以及第一電洞傳輸層152,其中電激發光結構126的第一電洞注入層150、第一電洞傳輸層152、發光層128、第一電子傳輸層136以及第一電子注入層138依序堆疊在第一電極120上,且第一電子注入層138接觸第二電極134。 Specifically, the electrically excited light structure 126 further includes The first electron transport layer 136, the first electron injection layer 138, the first hole injection layer 150, and the first hole transmission layer 152 in the port 130. The first hole injection layer 150, A hole transport layer 152, a light emitting layer 128, a first electron transport layer 136, and a first electron injection layer 138 are sequentially stacked on the first electrode 120, and the first electron injection layer 138 contacts the second electrode 134.
輔助結構140包含位於第二開口132內的第二電子傳輸層142以及第二電子注入層144,其中輔助結構140的第二電子傳輸層142以及第二電子注入層144依序堆疊在輔助電極122上,且第二電子注入層144接觸第二電極134。此外,輔助結構140不具有任何發光層、電洞注入層及電洞傳輸層。畫素結構P更包含第三電子傳輸層146以及第三電子注入層148,且第三電子傳輸層146以及第三電子注入層148依序堆疊在畫素定義層124上,而位在畫素定義層124上方的第二電極134覆蓋在第三電子注入層148上。 The auxiliary structure 140 includes a second electron transport layer 142 and a second electron injection layer 144 located in the second opening 132, wherein the second electron transport layer 142 and the second electron injection layer 144 of the auxiliary structure 140 are sequentially stacked on the auxiliary electrode 122. And the second electron injection layer 144 is in contact with the second electrode 134. In addition, the auxiliary structure 140 does not have any light emitting layer, hole injection layer, and hole transmission layer. The pixel structure P further includes a third electron transport layer 146 and a third electron injection layer 148, and the third electron transport layer 146 and the third electron injection layer 148 are sequentially stacked on the pixel definition layer 124 and located on the pixel The second electrode 134 above the defining layer 124 covers the third electron injection layer 148.
第一電子傳輸層136、第二電子傳輸層142以及第三電子傳輸層146可由同一層體形成。例如,第一電子傳輸層136、第二電子傳輸層142以及第三電子傳輸層146可透過同一個沉積製程形成,其中沉積在第一開口130內的部分為第一電子傳輸層136,沉積在第二開口132內的部分為第二電子傳輸層142,而沉積在畫素定義層124表面的部分為第三電子傳輸層146。同樣地,第一電子注入層138、第二電子注入層144以及第三電子注入層148也可由同一層體形成,例如其可透過同一個沉積製程形成。 The first electron transport layer 136, the second electron transport layer 142, and the third electron transport layer 146 may be formed from the same layer. For example, the first electron transport layer 136, the second electron transport layer 142, and the third electron transport layer 146 may be formed through the same deposition process, wherein a portion deposited in the first opening 130 is the first electron transport layer 136, and is deposited on A portion inside the second opening 132 is the second electron transport layer 142, and a portion deposited on the surface of the pixel definition layer 124 is the third electron transport layer 146. Similarly, the first electron injection layer 138, the second electron injection layer 144, and the third electron injection layer 148 may be formed from the same layer, for example, they may be formed through the same deposition process.
於此配置下,電激發光結構126可透過第一電子 傳輸層136、第一電子注入層138、第一電洞注入層150以及第一電洞傳輸層152提升發光層128的發光效率。另一方面,輔助電極122與第二電極134係仍可藉由輔助結構140導通,從而降低畫素結構P因電壓衰退所產生的負面影響。 In this configuration, the electrically excited light structure 126 can pass through the first electron The transmission layer 136, the first electron injection layer 138, the first hole injection layer 150, and the first hole transmission layer 152 improve the light emitting efficiency of the light emitting layer 128. On the other hand, the auxiliary electrode 122 and the second electrode 134 can still be conducted through the auxiliary structure 140, thereby reducing the negative effect of the pixel structure P due to the voltage decay.
另一方面,本實施方式中,第一電極120的下表面S1至第一開口130內的第二電極134的下表面S2之垂直距離(或稱第一電極120的下表面S1與第二電極134的下表面S2之間的間距)為距離d1,而輔助電極122的下表面S3至第二開口132內的第二電極134的下表面S4之垂直距離(或稱輔助電極122的下表面S3與第二電極134的下表面S4之間的間距)為距離d2,且距離d1仍大於距離d2。 On the other hand, in this embodiment, the vertical distance from the lower surface S1 of the first electrode 120 to the lower surface S2 of the second electrode 134 in the first opening 130 (or the lower surface S1 of the first electrode 120 and the second electrode The distance between the lower surface S2 of 134) is the distance d1, and the vertical distance from the lower surface S3 of the auxiliary electrode 122 to the lower surface S4 of the second electrode 134 in the second opening 132 (or the lower surface S3 of the auxiliary electrode 122) The distance from the lower surface S4 of the second electrode 134) is a distance d2, and the distance d1 is still greater than the distance d2.
請再看到第3圖,第3圖為根據本發明的第三實施方式繪示發光面板100C的剖面示意圖,且其剖面位置與第1B圖相同。本實施方式與第三實施方式的至少一個差異點在於,本實施方式的輔助結構140包含更多的層體。 Please refer to FIG. 3 again. FIG. 3 is a schematic cross-sectional view illustrating a light-emitting panel 100C according to a third embodiment of the present invention, and its cross-sectional position is the same as that of FIG. 1B. At least one difference between this embodiment and the third embodiment is that the auxiliary structure 140 of this embodiment includes more layers.
具體來說,輔助結構140更包含位於第二開口132內的第二電洞注入層154以及第二電洞傳輸層156,其中輔助結構140的第二電洞注入層154、第二電洞傳輸層156、第二電子傳輸層142以及第二電子注入層144依序堆疊在輔助電極122上,且第二電子注入層144接觸第二電極134。此外,輔助結構140仍不具有任何發光層。畫素結構P更包含第三電洞注入層158以及第三電洞傳輸層160,且第三電洞注入層158、第三電洞傳輸層160、第三電子傳輸層146以及第三電子注入層148依序堆疊在畫素定義層124上,而位在畫素定義層124上方 的第二電極134覆蓋在第三電子注入層148上。於此配置下,輔助電極122與第二電極134係仍可藉由輔助結構140導通,從而降低畫素結構P因電壓衰退所產生的負面影響。 Specifically, the auxiliary structure 140 further includes a second hole injection layer 154 and a second hole transmission layer 156 located in the second opening 132, wherein the second hole injection layer 154 and the second hole transmission of the auxiliary structure 140 The layer 156, the second electron transport layer 142, and the second electron injection layer 144 are sequentially stacked on the auxiliary electrode 122, and the second electron injection layer 144 contacts the second electrode 134. In addition, the auxiliary structure 140 still does not have any light emitting layer. The pixel structure P further includes a third hole injection layer 158 and a third hole transmission layer 160, and the third hole injection layer 158, the third hole transmission layer 160, the third electron transmission layer 146, and the third electron injection Layer 148 is sequentially stacked on the pixel definition layer 124 and is located above the pixel definition layer 124 The second electrode 134 is covered on the third electron injection layer 148. In this configuration, the auxiliary electrode 122 and the second electrode 134 can still be conducted through the auxiliary structure 140, thereby reducing the negative effect of the pixel structure P due to the voltage decay.
第4圖為根據本發明的第四實施方式繪示發光面板100D的上視示意圖。本實施方式與第一實施方式的至少一個差異點在於,本實施方式的輔助電極122與第二電極134連接於共通電壓源206,從而共同電性連接至共通電壓源206,其中共通電壓源206可適於提供輔助電極122與第二電極134相同的電壓。於此配置下,可透過輔助電極122改善第二電極134的電流密度分布,從而降低畫素結構P因電壓衰退所產生的負面影響。 FIG. 4 is a schematic top view of a light emitting panel 100D according to a fourth embodiment of the present invention. At least one difference between this embodiment and the first embodiment is that the auxiliary electrode 122 and the second electrode 134 of this embodiment are connected to a common voltage source 206, so as to be electrically connected to the common voltage source 206 in common, wherein the common voltage source 206 It may be adapted to provide the auxiliary electrode 122 with the same voltage as the second electrode 134. In this configuration, the current density distribution of the second electrode 134 can be improved through the auxiliary electrode 122, thereby reducing the negative effect of the pixel structure P due to the voltage decay.
綜上所述,本發明之至少一實施例的發光面板包含畫素結構,其中畫素結構包含薄膜電晶體、第一電極、輔助電極、電激發光結構以及第二電極。電激發光結構設置在第一電極與第二電極之間,並可透過第一電極與第二電極對其施加正偏壓致使發光,其中第一電極電性連接薄膜電晶體。輔助電極電性連接第二電極,其中第一電極與輔助電極可透過圖案化同一金屬層形成,從而降低製程對光罩數量的需求。輔助電極與第二電極可分別或共同連接至其供電端。藉由此配置,可增強第二電極的電流密度分布,從而改善畫素結構因電壓衰退所衍生之亮度不均的問題。 In summary, the light-emitting panel of at least one embodiment of the present invention includes a pixel structure, wherein the pixel structure includes a thin film transistor, a first electrode, an auxiliary electrode, an electro-excitation light structure, and a second electrode. The electro-excitation light structure is disposed between the first electrode and the second electrode, and a positive bias can be applied to the light through the first electrode and the second electrode to cause light emission. The first electrode is electrically connected to the thin film transistor. The auxiliary electrode is electrically connected to the second electrode, wherein the first electrode and the auxiliary electrode can be formed by patterning the same metal layer, thereby reducing the need for the number of photomasks in the manufacturing process. The auxiliary electrode and the second electrode may be connected to their power supply terminals separately or together. With this configuration, the current density distribution of the second electrode can be enhanced, thereby improving the problem of uneven brightness caused by the voltage decay of the pixel structure.
雖然本發明已以多種實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範 圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in various embodiments as above, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. Protection range Wei Dang shall be determined by the scope of the attached patent application.
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TWI257496B (en) * | 2001-04-20 | 2006-07-01 | Toshiba Corp | Display device and method of manufacturing the same |
TWI413441B (en) * | 2009-12-29 | 2013-10-21 | Au Optronics Corp | Pixel structure and electroluminescence device |
TW201511250A (en) * | 2013-09-12 | 2015-03-16 | Au Optronics Corp | Pixel structure |
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CN1658726A (en) * | 2004-02-14 | 2005-08-24 | 三星Sdi株式会社 | Organic electro-luminescent display device and method of manufacturing the same |
TWI413441B (en) * | 2009-12-29 | 2013-10-21 | Au Optronics Corp | Pixel structure and electroluminescence device |
TW201511250A (en) * | 2013-09-12 | 2015-03-16 | Au Optronics Corp | Pixel structure |
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