TWI670469B - Crystal quality determination method - Google Patents
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Abstract
本發明提供一種晶體品質判定方法，包括以下步驟：將待測晶體放置於一光源與一影像產生器之間，透過該影像產生器取得該晶體的影像；針對晶體影像進行對比強化處理並定義出待判定區域；依據預先設定的一合格判定標準對晶體影像中待判定區域之大小及/或特定面積內之待判定區域之數量進行判斷；若待判定區域之大小及/或特定面積內之待判定區域之數量不符合該合格判定標準，則將該待判定區域及/或指定面積區域判定為不合格。透過本發明能快速且精確地標示出晶體品質不合標準的區域並能減少人員的誤判及提升晶體品質判定的效率，對後續晶體的切割及良率能產生極大的幫助。 The present invention provides a method for determining a crystal quality, comprising the steps of: placing a crystal to be tested between a light source and an image generator, obtaining an image of the crystal through the image generator; performing contrast enhancement processing on the crystal image and defining The area to be determined; determining the size of the area to be determined in the crystal image and/or the number of areas to be determined within the specific area according to a predetermined qualification criterion; if the size of the area to be determined and/or the specific area is to be determined If the number of determination areas does not meet the eligibility criteria, the area to be determined and/or the area of the designated area are determined to be unqualified. Through the invention, the region with substandard crystal quality can be quickly and accurately marked, and the misjudgment of personnel and the efficiency of crystal quality determination can be reduced, which can greatly help the cutting and yield of subsequent crystals.
Description
本發明是關於一種晶體品質判定方法，尤其是指一種可以自動定義晶體合格品質區域的判定方法。 The present invention relates to a method for determining crystal quality, and more particularly to a method for determining a region in which a crystal quality is automatically defined.
在工業自動化的快速發展下，運用自動光學檢查(Automated Optical Inspection,AOI)對取得影像進行分析，已經成為工業自動化的必備條件，常應用在半導體製程中對晶圓進行缺陷檢查，能克服精細檢查作業中所耗費的大量人力，同時能減低誤判的機率。 Under the rapid development of industrial automation, the use of Automated Optical Inspection (AOI) to analyze images has become a necessary condition for industrial automation. It is often used in semiconductor manufacturing to perform defect inspection on wafers, which can overcome fine inspection. The large amount of manpower spent in the operation can also reduce the chance of misjudgment.
在晶體製造業中，長晶過程通常為一高溫製造程序，過程中所有的相關設備都會影響晶體的純度，包括加熱器、保溫材料等，有可能會因為操作過程導致其他物質的掉入；或是製造過程中，因為製程參數控制的條件，導致特定缺陷或是不純物質的生成，以上不純物質或缺陷就會造成晶體品質的影響。 In the crystal manufacturing industry, the crystal growth process is usually a high-temperature manufacturing process, in which all relevant equipment affects the purity of the crystal, including heaters, insulation materials, etc., which may cause other substances to fall due to the operation process; or In the manufacturing process, because of the conditions controlled by the process parameters, resulting in the formation of specific defects or impurities, the above impurities or defects will cause the quality of the crystal.
對晶棒而言，使用的需求不同，其中真正影響品質的雜質點大小及密集程度均不同，並非所有被檢驗到的雜質點都需要被切除，所以當影像透過人力以目視的方式進行判別，對於某些影像灰階較不明確或經常要計算特定尺寸顆粒的密度時，就會容易發生誤判的狀況，造成品質異常的產品流出。 For the ingot, the requirements for use are different. The size and intensity of the impurity points that really affect the quality are different. Not all the impurity points to be inspected need to be removed, so when the image is visually discriminated by human power, When the gray scale of some images is relatively unclear or the density of particles of a specific size is often calculated, misjudgment is likely to occur, resulting in an outflow of an abnormal quality product.
所以必須有一套計算方法，能結合自動光學檢查，針對取得 的影像進行分析，並且達成判定此晶棒是否符合品質規範，或定義出品質符合需求的區域，以達成節省人力與提高判定效率的目標。 So there must be a set of calculation methods that can be combined with automated optical inspection to achieve The image is analyzed and it is determined whether the ingot meets the quality specification or defines an area where the quality meets the demand, so as to achieve the goal of saving manpower and improving the efficiency of the judgment.
綜上所述，如何精確及快速地判定晶體品質，攸關著相關產業的生產效率及成本，也是一個重要且及急迫解決的課題。 In summary, how to accurately and quickly determine the quality of the crystal, which is related to the production efficiency and cost of related industries, is also an important and urgent problem.
為解決上述的課題，本發明提出一種晶體品質判定方法，包括以下步驟：將待測晶體放置於一光源與一影像產生器之間，透過該影像產生器取得該晶體的影像；針對晶體影像進行對比強化處理並定義出待判定區域；依據預先設定的一合格判定標準對晶體影像中待判定區域之大小及/或特定面積內之待判定區域之數量進行判斷；若待判定區域之大小及/或特定面積內之待判定區域之數量不符合該合格判定標準，則將該待判定區域及/或指定面積區域判定為不合格。 In order to solve the above problems, the present invention provides a method for determining a crystal quality, comprising the steps of: placing a crystal to be tested between a light source and an image generator, and obtaining an image of the crystal through the image generator; Comparing the enhancement processing and defining the area to be determined; determining the size of the area to be determined in the crystal image and/or the number of the area to be determined within the specific area according to a predetermined qualification criterion; if the size of the area to be determined and/or Or the number of the areas to be determined within the specific area does not meet the eligibility determination criteria, and the area to be determined and/or the area of the designated area is determined to be unqualified.
在將該待判定區域及/或指定面積區域判定為不合格後，還進一步包括將該不合格或合格區域進行標示之步驟。 After the area to be determined and/or the area of the designated area is determined to be unacceptable, the step of marking the unqualified or qualified area is further included.
在將該待判定區域及/或指定面積區域判定為不合格後，還進一步包括：對判定合格區域的面積進一步判斷是否小於一特定面積值，若合格區域的面積小於該特定面積值時，則將該合格區域的進一步判定為不合格之步驟。 After the area to be determined and/or the area of the designated area is determined to be unsatisfactory, the method further includes: determining whether the area of the qualified area is less than a specific area value, and if the area of the qualified area is smaller than the specific area value, The further determination of the qualified area is a step of failing.
在將該合格區域的進一步判定為不合格之步驟後還包括將進一步判定為不合格或合格之區域進行標示之步驟。 Further, after the step of further determining that the qualified area is unacceptable, the step of marking the area further determined to be unqualified or qualified is further included.
所述的光源為白熾燈、LED燈、鹵素燈、水銀燈或雷射光源；所述影像產生器為攝相機或攝影機。 The light source is an incandescent lamp, an LED lamp, a halogen lamp, a mercury lamp or a laser light source; the image generator is a camera or a camera.
透過本發明的品質判定方法能快速且精確地標示出晶體品質不合標準的區域，並能減少人員的誤判及提升晶體品質判定的效率，對後續晶體的切割及良率能產生極大的幫助。 The quality determination method of the present invention can quickly and accurately mark areas where the crystal quality is out of standard, and can reduce the misjudgment of personnel and improve the efficiency of crystal quality determination, and can greatly help the cutting and yield of subsequent crystals.
S101~S105‧‧‧步驟 S101~S105‧‧‧Steps
10‧‧‧晶體 10‧‧‧ crystal
20‧‧‧矽晶棒 20‧‧‧ crystal rod
I、I1~I5‧‧‧待判定區域 I, I 1 ~ I 5 ‧‧‧ area to be determined
F、F1~F11‧‧‧不合格區域 F, F 1 ~F 11 ‧‧‧Unqualified area
P‧‧‧合格區域 P‧‧‧Qualified Area
圖1為晶體品質判定方法流程圖。 Figure 1 is a flow chart of a method for determining crystal quality.
圖2為根據步驟S101所取得的穿透影像。 FIG. 2 is a penetration image obtained according to step S101.
圖3為圖2影像經過處理後的影像。 FIG. 3 is an image of the image of FIG. 2 after being processed.
圖4~圖16為本發明各種實施例的待判定區域、不合格區域、合格區域的示意圖。 4 to 16 are schematic views of a to-be-determined area, a non-conforming area, and a qualified area according to various embodiments of the present invention.
本發明揭示一種晶體品質判定方法，以下將配合圖式說明本發明的一具體實施方式：請參閱圖1，首先進行步驟S101，將待測晶體10放置於一光源(例如：白熾燈、LED燈、鹵素燈、水銀燈或雷射光源等)與影像產生器(例如：攝相機、攝影機或其他種類的影像產生器)之間，當晶體存在雜質、缺陷或其他參雜時，會造成該區域在光源照射晶體時無法完全被所述光源穿透，使得影像產生器接收到的訊號就會有強弱之差異，所顯示的影像就會有明暗之區別，如圖2所示。 The present invention discloses a crystal quality determination method. Hereinafter, a specific embodiment of the present invention will be described with reference to the drawings: Referring to FIG. 1, first, step S101 is performed to place the crystal to be tested 10 on a light source (for example, an incandescent lamp or an LED lamp). , between halogen lamps, mercury lamps, or laser sources, etc.) and image generators (such as cameras, cameras, or other types of image generators). When crystals are contaminated, defective, or otherwise doped, the area is When the light source illuminates the crystal, it cannot be completely penetrated by the light source, so that the signal received by the image generator will have a difference in intensity, and the displayed image will have a difference between light and dark, as shown in FIG. 2 .
接著進行步驟S102，針對步驟S101取得的影像資訊，透過調整影像的亮度、對比或針對每一像素進行數學運算、強化邊緣等影像處理，以強化影像中需要進行判定部位的差異，如圖3所示；再調整閾值(threshold)進行二值化處理，或利用人工智慧(AI)等方式區分出待判定區域，此待判定區域可以是包含雜質、缺陷、陰影而產生不完全透光的黑影 或斑點的區域；本實施例透過上述方法區分出晶體10中待判定區域I，並同時取得待判定區域I的影像資訊，影像資訊包含尺寸、位置等資訊，如圖4所示。 Next, in step S102, for the image information obtained in step S101, by adjusting the brightness of the image, comparing or performing mathematical operations on each pixel, and enhancing image processing such as edges, it is necessary to enhance the difference in the determination position in the image, as shown in FIG. Re-adjusting the threshold (threshold) for binarization processing, or distinguishing the area to be determined by means of artificial intelligence (AI), etc., the area to be determined may be a black shadow containing impurities, defects, and shadows to generate incomplete light transmission. Or the area of the spot; in this embodiment, the area I to be determined in the crystal 10 is distinguished by the above method, and the image information of the area I to be determined is obtained at the same time, and the image information includes information such as size and position, as shown in FIG. 4 .
接著進行步驟S103，依據預先設定的判定標準對待判定區域I進行判斷，依據所述的判定標準將未符合標準的待判定區域I定義為不合格區域F，其他區域則判定為合格區域。所述判定標準的設定可以依據待測晶體種類及檢測目的的不同而有差異。在本實施例中合格判定標準為：待判定區域I的尺寸不得大於5mm、合格區域大於或等於15*15cm，故根據判定標準篩選出大於5mm的待判定區域為I1、I2、I3，並且將包含有該些區域的晶體部份定義為不合格區域F1、F2、F3，如圖5所示。 Next, in step S103, the determination area I is determined according to a predetermined determination criterion, and the to-be-determined area I that does not conform to the standard is defined as the defective area F according to the determination criterion, and the other areas are determined as the qualified areas. The setting of the determination criterion may vary depending on the type of crystal to be tested and the purpose of detection. In this embodiment, the eligibility criterion is: the size of the area to be determined I is not greater than 5 mm, and the qualified area is greater than or equal to 15*15 cm, so the areas to be determined larger than 5 mm are selected according to the judgment criteria as I1, I2, I3, and The crystal portion including the regions is defined as the defective regions F1, F2, and F3, as shown in FIG.
接著再進行步驟S104，依據判定標準再針對根據步驟S103判定不合格區域以外的其他晶體影像區域進行判斷，若該區域不符合判定標準，則將不符合判定標準的區域再定義為不合格區域F，在一實施例中對圖5的晶體影像進一步進行判定，將可用區域小於15*15cm區域再定義為不合格區域，如圖6中之F4、F5、F6；最後進行步驟S105將晶體的影像扣除所有不合格區域F1~F6，得到最後的合格區域P，如圖7所示，以完成晶體品質的判定，本發明並可以於晶體品質判定完成後進一步對不合格或合格的區域進行標示，標示的方式可以使用畫筆、噴墨、蓋印、雷射雕刻或輸出加工路徑檔案等方式達成。透過本發明的品質判定方法能快速且精確地標示出晶體品質不合標準的區域，並能減少人員的誤判及提升晶體品質判定的效率，對後續晶體的切割及良率能產生極大的幫助。 Then, in step S104, the determination is made according to the determination criterion for the other crystal image regions other than the unqualified region according to step S103. If the region does not meet the determination criteria, the region that does not meet the determination criteria is redefined as the non-conforming region F. In an embodiment, the crystal image of FIG. 5 is further determined, and the area with the available area less than 15*15 cm is redefined as the unqualified area, as shown in FIG. 6 by F4, F5, and F6; and finally, the image of the crystal is performed in step S105. Deducting all the unqualified areas F1~F6, the final qualified area P is obtained, as shown in FIG. 7, to complete the determination of the crystal quality, the present invention can further mark the unqualified or qualified area after the completion of the crystal quality determination. The method of marking can be achieved by using a brush, inkjet, stamping, laser engraving or outputting a processing path file. The quality determination method of the present invention can quickly and accurately mark areas where the crystal quality is out of standard, and can reduce the misjudgment of personnel and improve the efficiency of crystal quality determination, and can greatly help the cutting and yield of subsequent crystals.
在本發明之另一實施例中，首先進行步驟S101，利用將矽 晶棒20放置於波長範圍為0.9~1.4μm之光源與相機之間的方式取得晶棒影像，接著進行步驟S102，針對影像進行數學運算及強化邊緣等影像處理，取得晶棒中待判定區域I的影像資訊，如圖8所示。 In another embodiment of the present invention, step S101 is first performed, and The ingot is placed in a wavelength range of 0.9-1.4 μm between the light source and the camera to obtain an ingot image, and then step S102 is performed, and the image is subjected to mathematical operations and image processing such as edge enhancement to obtain the region to be determined in the ingot. Image information, as shown in Figure 8.
接著進行步驟S103，依據預先設定一判定標準對晶棒中待判定區域I進行判斷，在本實施例中預先設定的合格判定標準為：待判定區域I的尺寸不得大於5mm、若待判定區域I的尺寸介於1~5mm者，於5cm內不得超過0個、可使用區域大於或等於15*15cm，故在步驟S103能判斷出待判定區域大於5mm的區域I4，並將該區域定義為不合格區域F8；待判定區域介於1~5mm的區域為I5，並將該區域定義為不合格區域F7。接著進行步驟S104，針對F7及F8以外之其他區域進行判斷，可用區域小於15*15cm之判斷標準再判定F7及F8之間的區域為不合格區域F9，如圖9所示。最後進行步驟S105將所取得的晶棒影像，扣除所有不合格區域F7~F9，得到合格區域P，如圖10所示。 Then, in step S103, the area to be determined in the ingot is determined according to a predetermined determination criterion. In the present embodiment, the pre-set qualification criterion is: the size of the area to be determined I is not greater than 5 mm, if the area to be determined is If the size is between 1 and 5 mm, no more than 0 in 5 cm, and the usable area is greater than or equal to 15*15 cm. Therefore, in step S103, it can be determined that the area to be determined is larger than 5 mm, and the area is defined as not The qualified area F8; the area to be determined from 1 to 5 mm is I5, and the area is defined as the unqualified area F7. Next, in step S104, it is determined for other regions than F7 and F8, and the available region is less than 15*15 cm, and the region between F7 and F8 is determined as the defective region F9, as shown in FIG. Finally, in step S105, the obtained ingot image is subtracted from all the defective regions F7 to F9 to obtain the qualified region P, as shown in FIG.
本發明之又一實施例為，首先進行步驟S101，利用將矽晶棒20放置於波長範圍為0.9~1.4μm之光源與紅外相機之間取得矽晶棒影像，接著進行步驟S102，針對矽晶棒影像進行數學運算及強化邊緣等影像處理，如圖11所示，取得待判定區域I的影像資訊。接著進行步驟S103對待判定區域I進行判斷，本實施例的合格判定標準為：待判定區域I的尺寸不得大於5mm，若待判定區域I的尺寸介於1~5mm者，於5cm內分別不得超過0個、可使用區域大於等於15*15cm，故所有待判定區域I皆判定為不合格區域F10；接著進行步驟S104，針對F10以外之剩餘區域進行判斷，確認可使用區域並無小於15*15cm之合格標準，如圖12所示。最後進行步驟S105將所取 得的影像，扣除所有不合格區域F10，得到所有合格區域P，如圖13所示。 In another embodiment of the present invention, first, step S101 is performed to obtain a twin rod image by placing the twin rod 20 between a light source having a wavelength range of 0.9 to 1.4 μm and an infrared camera, and then performing step S102 for twinning. The stick image performs mathematical operations and image processing such as edge enhancement, and as shown in FIG. 11, the image information of the region I to be determined is obtained. Then, in step S103, the determination area I is determined. The qualification criterion of the embodiment is: the size of the area to be determined I is not more than 5 mm, and if the size of the area I to be determined is between 1 and 5 mm, it may not exceed 5 cm respectively. 0, the usable area is greater than or equal to 15*15cm, so all the areas to be determined I are judged as the unqualified area F10; then step S104 is performed to judge the remaining area other than F10, and it is confirmed that the usable area is not less than 15*15cm The eligibility criteria are shown in Figure 12. Finally, step S105 is taken The obtained image is deducted from all the defective areas F10, and all the qualified areas P are obtained, as shown in FIG.
本發明之又一實施例為，進行步驟S101取得矽晶棒20之影像，接著進行步驟S102，針對矽晶棒影像進行數學運算及強化邊緣等影像處理，找出不包含雜質、缺陷、陰影等區域作為待判定區域I，如圖14，而本實施例之合格判定標準設定為：待判定區域I未包含的尺寸介於1~5mm者，於5cm內分別不超過2個，可使用區域大於等於15*15cm，故於下個步驟S103能將待判定區域I分為合格區域P與不合格區域F11；接著進行步驟S104，針對F11以外之其他區域進行判斷，確認可使用區域並無均大於於15*15cm。最後進行步驟S105將所取得的影像，扣除所有的不合格區域F11，得到所有合格區域P，如圖15所示。 According to still another embodiment of the present invention, the image of the crystallizing rod 20 is obtained in step S101, and then step S102 is performed to perform mathematical operations on the crystallized rod image and image processing such as edge enhancement to find out impurities, defects, shadows, and the like. The area is the area to be determined I, as shown in FIG. 14, and the qualification criterion of the present embodiment is set as follows: if the size of the area to be determined I is not included in the range of 1 to 5 mm, no more than 2 in 5 cm, and the usable area is larger than It is equal to 15*15cm. Therefore, in the next step S103, the area to be determined I can be divided into the qualified area P and the unqualified area F11; then, in step S104, the area other than F11 is judged, and it is confirmed that the usable area is not greater than At 15*15cm. Finally, in step S105, all the defective areas F11 are subtracted from the acquired images, and all the qualified areas P are obtained, as shown in FIG.
在本發明中之又一實施例，合格判定標準設定為：待判定區域I未包含的尺寸介於1~5mm者，於5cm內分別不得超過7個，可使用區域大於等於15*15cm；首先依照步驟S101與S102取得矽晶棒20之待判定區域I如圖14，若步驟S103將待判定區域I區分為兩部份，則兩部份皆符合合格標準，所以並無不合格區域；接著進行步驟S104，確認可使用區域無大於15*15cm。最後進行步驟S105扣除所有異常區域，因為本實施例無異常區域可扣除，所以可判定晶體經過切分可為兩部份合格區域P，如圖16所示。 In still another embodiment of the present invention, the eligibility determination criterion is set as follows: the size of the area to be determined I is not included in the range of 1 to 5 mm, and no more than 7 in 5 cm, and the usable area is greater than or equal to 15*15 cm; S101 and S102 obtain the to-be-determined area I of the twin rod 20 as shown in FIG. 14. If the area to be determined I is divided into two parts in step S103, both parts meet the eligibility criteria, so there is no unqualified area; At S104, it is confirmed that the usable area is no more than 15*15 cm. Finally, step S105 is performed to deduct all abnormal regions. Since no abnormal region can be deducted in this embodiment, it can be determined that the crystal can be divided into two qualified regions P as shown in FIG.
在其他的實施方式中待判定區域也可以是不包含雜質、缺陷、陰影而有較佳透光不具黑影或斑點的區域或是具黑影或斑點的較少的區域，而預設判斷標準則為待判定區域的黑影或斑點的數量及大小是否少於或等於一定的數量或尺寸，若黑影或斑點的數量及大小少於或等於一定的數量或尺寸時則進一步再判斷該區域可使用的面積是否符合預設的合格 面積，若是則判定為該區域為合格。 In other embodiments, the area to be determined may also be an area that does not contain impurities, defects, shadows, and preferably has no black shadow or spots, or a small area with black shadows or spots, and the predetermined criterion is Then, whether the number and size of the shadows or spots of the area to be determined are less than or equal to a certain number or size, and if the number and size of the shadows or spots are less than or equal to a certain number or size, the area is further judged. Whether the available area meets the preset eligibility The area, if it is, is determined to be acceptable for the area.
在另一實施方式中，在將該待判定區域及/或特定面積區域判定為不合格後，還可以進一步對判定合格區域的面積進一步判斷是否小於一特定面積值，若合格區域的面積小於該特定面積值時，則將該合格區域的進一步判定為不合格之步驟。 In another embodiment, after the area to be determined and/or the area of the specific area is determined to be unsatisfactory, the area of the qualified area may be further determined to be less than a specific area value, and if the area of the qualified area is smaller than the area When the specific area value is specified, the further determination of the qualified area is a step of failing.
透過上述所揭示的品質判定方法，能夠透過數位計算方式，將晶體分類出合格與不合格區域，減少判定過程對於人員的依賴性，能夠擁有較高的重複性，並且數位化的資訊能夠提供後續自動化控制與資料整合目的，同時達成節約人力與提高品質。 Through the above-mentioned quality determination method, the crystal can be classified into qualified and unqualified areas by digital calculation, the dependence process can be reduced for personnel, and the repeatability can be achieved, and the digital information can provide follow-up. Automated control and data integration aims to achieve savings in manpower and quality.
以上所述者僅為用以解釋本發明之較佳實施例，並非企圖據以對本發明做任何形式上之限制，凡在相同發明精神下所作有關本發明之任何修飾或變更，皆仍應包括在本發明意圖保護之範疇。 The above is only a preferred embodiment for explaining the present invention, and is not intended to limit the invention in any way. Any modifications or alterations to the present invention in the spirit of the same invention should still be included. It is intended to be within the scope of the invention.
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