TWI667704B - Method and apparatus for separating adhesive tape - Google Patents
Method and apparatus for separating adhesive tape Download PDFInfo
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- TWI667704B TWI667704B TW104126655A TW104126655A TWI667704B TW I667704 B TWI667704 B TW I667704B TW 104126655 A TW104126655 A TW 104126655A TW 104126655 A TW104126655 A TW 104126655A TW I667704 B TWI667704 B TW I667704B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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Abstract
精度佳地檢測出在經背面磨削後的半導體晶圓所產生的裂痕或破損等之異常部位。 Detects abnormal parts such as cracks or breakage generated on the semiconductor wafer after back grinding with high accuracy.
以設置在保持台的環狀凸部保持晶圓的外周，對藉由該晶圓所密閉之保持台的空間供給空氣並加壓。在此加壓狀態下藉由剝離構件將剝離帶貼附於保護帶且一邊折返一邊將剝離帶剝離而將保護帶一體地從晶圓剝離。於該剝離過程，以壓力計檢測出保持台的空間的壓力變化。將所檢測出的壓力之實測值與預先決定的基準值作比較而判別晶圓的裂痕。 An outer periphery of the wafer is held by a ring-shaped convex portion provided on the holding table, and air is supplied to the space of the holding table closed by the wafer and pressurized. In this pressurized state, the release tape is attached to the protective tape by the release member, and the release tape is peeled off while being folded back, so that the protective tape is integrally peeled from the wafer. During this peeling process, the pressure change in the space holding the stage was detected with a pressure gauge. The measured value of the detected pressure is compared with a predetermined reference value to determine a crack in the wafer.
Description
本發明係有關一種將被貼附在半導體晶圓(以下，酌情稱為「晶圓」)的電路形成面之保護帶或雙面黏著帶等之黏著帶剝離的黏著帶剝離方法及黏著帶剝離裝置。 The present invention relates to an adhesive tape peeling method for peeling an adhesive tape such as a protective tape or a double-sided adhesive tape attached to a circuit forming surface of a semiconductor wafer (hereinafter, referred to as a “wafer” as appropriate) and an adhesive tape peeling method. Device.
於已完成圖案形成處理之晶圓的表面上貼附保護帶之後，施以使背面整體均一的背面研磨處理。在附帶有保護帶的晶圓被搬往進行細切分離成晶片的切割工程之前，從表面剝離保護帶。 After attaching a protective tape to the surface of the wafer on which the patterning process has been completed, a back surface polishing process is performed to make the entire back surface uniform. The protective tape is peeled from the surface before the wafer with the protective tape is transferred to a dicing process for fine-cut separation into wafers.
關於從晶圓表面剝離保護帶的方法方面，例如照以下方式實施。將貼附著保護帶的表面朝上並將晶圓吸附保持於保持台。使貼附輥一邊轉動一邊在保護帶上貼附剝離用的黏著帶。之後，利用越前端越細的板狀端緣構件將黏著帶逐漸反轉剝離，藉以將被接著於黏著帶的保護帶從晶圓表面一體剝離(參照專利文獻1)。 The method of peeling a protective tape from the wafer surface is implemented as follows, for example. The surface to which the protective tape is attached faces upward, and the wafer is held on the holding table by suction. The adhesive tape for peeling was attached to the protective tape while the application roller was rotated. Thereafter, the adhesive tape is gradually reversed and peeled by a plate-shaped edge member that is thinner toward the front end, and the protective tape adhered to the adhesive tape is integrally peeled from the wafer surface (see Patent Document 1).
特開2002-124494號公報 JP 2002-124494
然而，上述的習知方法有發生以下的問題。 However, the above-mentioned conventional method has the following problems.
近年來，為了能夠隨著應用程式的急速發展而進行高密度封裝，被要求晶圓薄型化。且在該薄型化的同時晶圓的尺寸有變大的傾向。因為晶圓的剛性會伴隨於此等薄型化及大型化而降低，故變得容易產生晶圓裂痕。 In recent years, in order to enable high-density packaging with rapid development of applications, thinner wafers are required. In addition, the size of the wafer tends to increase along with the reduction in thickness. Since the rigidity of the wafer is reduced in accordance with such reduction in thickness and size, wafer cracks tend to occur.
設計成在產生裂痕的情況，可藉由形成於保持台的複數個吸附孔之吸引力的變化來檢測出。然而，僅可在裂痕產生的部位與吸附孔重疊的情況檢測出吸引力的變化。亦即，無法檢測出晶圓全面上之裂痕的產生。 It is designed to detect the occurrence of cracks by the change in the attractive force of a plurality of suction holes formed in the holding table. However, a change in the attractive force can be detected only when the portion where the crack occurs overlaps with the adsorption hole. That is, the occurrence of cracks on the entire wafer cannot be detected.
因此，當繼續處理已產生裂痕狀態的晶圓時，會有碎片被捲進裝置內而發生不必要的停止，或者污染下個處理對象的晶圓之問題。 Therefore, when a wafer having a cracked state continues to be processed, there is a problem that the chips are rolled into the device and stopped unnecessarily or the next wafer to be processed is contaminated.
本發明係有鑑於此種事情而成者，主要目的在於提供一種可精度佳地檢測出在經背面磨削後的半導體晶圓所產生的裂痕等之黏著帶剝離方法及黏著帶剝離裝置。 The present invention has been made in view of such a problem, and a main object thereof is to provide an adhesive tape peeling method and an adhesive tape peeling device that can accurately detect cracks and the like generated in a semiconductor wafer after back grinding.
本發明為達成此種目的而採用以下的構成。 In order to achieve this object, the present invention adopts the following configuration.
亦即，一種黏著帶剝離方法，係剝離被貼附於半導體晶圓的黏著帶之黏著帶剝離方法，其特徵為具備：保持過程，以設置在保持台的環狀凸部保持前述半導體晶圓的外周；加壓過程，對藉由前述半導體晶圓所 密閉之保持台的中空內部供給氣體並加壓；剝離過程，藉由剝離構件將剝離帶貼附於前述黏著帶且一邊折返一邊剝離該剝離帶而將黏著帶一體地從半導體晶圓剝離；檢測過程，在前述剝離過程，利用檢測器檢測出朝向保持台的中空內部之氣體的供給流量或壓力的變化至少一者；及判別過程，從前述檢測出的實測值與預先決定的基準值之比較來判別半導體晶圓之裂痕。 That is, an adhesive tape peeling method is an adhesive tape peeling method for peeling an adhesive tape attached to a semiconductor wafer. The method includes a holding process for holding the semiconductor wafer with a ring-shaped convex portion provided on a holding table. The periphery of the semiconductor wafer; Gas is supplied to the hollow interior of the sealed holding table and pressurized; during the peeling process, the peeling tape is attached to the aforementioned adhesive tape and the peeling tape is peeled while being folded back to peel the adhesive tape from the semiconductor wafer integrally; detection In the aforementioned peeling process, a detector is used to detect at least one of a change in a supply flow rate or a pressure of the gas toward the hollow inside of the holding table; and a discrimination process in which a comparison between an actual measured value detected in advance and a predetermined reference value To identify cracks in semiconductor wafers.
依據上述方法，因為剝離被覆著表面的黏著帶，使得氣體從晶圓的裂痕部分漏洩。利用檢測器檢測出因該漏洩而變化的氣體之供給流量及中空內部的壓力變化至少一者，藉此可檢測出該裂痕。因此，可防範產生裂痕的晶圓被搬往下一工程。又，在檢測出裂痕的情況，可將晶圓的碎片快速地除去或對裂痕施以處置。因此，可避免污染保持台或下個處理對象的晶圓。此外，本發明中所謂「裂痕」是意味著包含「裂縫」及「破損」的異常部位。 According to the above method, because the adhesive tape covering the surface is peeled off, the gas leaks from the crack portion of the wafer. The detector detects at least one of a supply flow rate of the gas that changes due to the leak and a change in the pressure inside the hollow, thereby detecting the crack. As a result, it is possible to prevent a wafer that has been cracked from being moved to the next process. In addition, when a crack is detected, the chip of the wafer can be quickly removed or the crack can be treated. Therefore, contamination of the holding table or the wafer to be processed next can be avoided. In addition, in the present invention, "crack" means an abnormal portion including "crack" and "damage".
此外，關於上述方法，亦可記憶檢測出裂痕之時間點的位置。 In addition, regarding the above method, the position at the time point when the crack was detected may be memorized.
依據此方法，可快速地確認裂痕的位置而施以處置。又，在下個工程可利用該位置資訊。例如，在切割處理過程，可從已被細切分離的晶片將該裂痕部分的晶片廢棄或除去。 According to this method, the position of the crack can be quickly identified and treated. The location information can be used in the next project. For example, during the dicing process, the cracked portion of the wafer may be discarded or removed from the wafer that has been finely separated.
本發明為達成此種目的而採用以下的構成。 In order to achieve this object, the present invention adopts the following configuration.
亦即，一種黏著帶剝離裝置，係剝離被貼附於半導體晶圓的黏著帶之黏著帶剝離裝置，其特徵為具 備：保持台，藉由環狀凸部保持前述半導體晶圓的外周；加壓器，對藉由前述半導體晶圓所密閉之中空內部供給氣體並加壓；剝離帶供給機構，朝前述半導體晶圓供給帶狀的剝離帶；剝離機構，藉由剝離構件將剝離帶貼附於前述保持台上的半導體晶圓之後，透過利用該剝離構件使剝離帶折返並剝離而將黏著帶一體地從半導體晶圓剝離；水平驅動機構，以前述保持台和剝離構件交叉的方式使之相對地水平移動；控制部，調整前述保持台的中空內部的壓力；檢測器，在剝離前述黏著帶之過程，檢測出氣體的供給流量之變化及中空內部的壓力變化至少一者；判別部，從藉由前述檢測器所檢測出的實測值與預先決定的基準值之比較來判別半導體晶圓之裂痕；及帶回收機構，將和前述黏著帶一體化的剝離帶捲繞回收。 That is, an adhesive tape peeling device is an adhesive tape peeling device for peeling an adhesive tape attached to a semiconductor wafer, which is characterized in that Preparation: The holding table holds the outer periphery of the semiconductor wafer with a ring-shaped convex portion; the pressurizer supplies and pressurizes the inside of the hollow space enclosed by the semiconductor wafer; the strip supply mechanism is peeled toward the semiconductor crystal A strip-shaped release tape is supplied in a circle; a release mechanism attaches the release tape to the semiconductor wafer on the holding table by a release member, and then uses the release member to fold and release the release tape to integrally remove the adhesive tape from the semiconductor. Wafer peeling; horizontal drive mechanism that moves the holding table and the peeling member horizontally relative to each other; the control unit adjusts the pressure inside the hollow of the holding table; the detector detects the process of peeling the adhesive tape At least one of a change in the supply flow rate of the outgas and a change in the pressure inside the hollow; the discrimination section judges the crack of the semiconductor wafer by comparing the measured value detected by the detector with a predetermined reference value; and The recovery mechanism winds up the release tape integrated with the adhesive tape.
依據此構成，檢測出因剝離被覆著晶圓表面的黏著帶而變化之朝向中空內部的氣體流量及壓力變化至少一者。因此，由該變化可檢測出產生在晶圓的裂痕。亦即，可適當實施上述方法。 According to this configuration, at least one of a gas flow rate and a pressure change toward the inside of the hollow, which is changed by peeling the adhesive tape covering the surface of the wafer, is detected. Therefore, a crack generated in the wafer can be detected from the change. That is, the above method can be appropriately implemented.
此外，亦可建構成：於該構成中，具備記憶部用以記憶藉由判別部所判別的裂痕的位置。 In addition, it is also possible to construct a structure in which a memory section is provided to memorize the position of the crack identified by the discrimination section.
依據此構成，可由所記憶之位置資訊快速地確認裂痕部位。又，該位置資訊亦可利用在例如切割工程等之後的工程。 According to this configuration, the location of the crack can be quickly identified from the stored position information. In addition, the position information may be used in a process subsequent to, for example, a cutting process.
依據本發明的黏著帶剝離方法及黏著帶剝離裝置，可精度佳地檢測出在經背面磨削後的半導體晶圓所產生的裂痕。 According to the adhesive tape peeling method and the adhesive tape peeling device of the present invention, it is possible to accurately detect cracks generated in a semiconductor wafer after back-grinding.
1‧‧‧保持台 1‧‧‧ holding table
2‧‧‧帶供給部 2‧‧‧ with supply department
3‧‧‧剝離機構 3‧‧‧ stripping agency
4‧‧‧帶回收部 4‧‧‧ with recycling department
5‧‧‧凹部 5‧‧‧ recess
6‧‧‧環狀凸部 6‧‧‧ annular projection
7‧‧‧吸附溝 7‧‧‧ adsorption groove
8‧‧‧真空源 8‧‧‧Vacuum source
9‧‧‧空間 9‧‧‧ space
10‧‧‧空氣供給孔 10‧‧‧Air supply hole
11‧‧‧流路 11‧‧‧flow
12‧‧‧空氣供給裝置 12‧‧‧Air supply device
13‧‧‧壓力計 13‧‧‧Pressure gauge
14‧‧‧軌道 14‧‧‧ track
15‧‧‧可動台 15‧‧‧ mobile station
16‧‧‧脈衝馬達 16‧‧‧Pulse motor
17‧‧‧螺桿 17‧‧‧Screw
20‧‧‧剝離單元 20‧‧‧ stripping unit
21‧‧‧縱向框 21‧‧‧ vertical frame
22‧‧‧支持框 22‧‧‧ Support Box
23‧‧‧基台 23‧‧‧ abutment
24‧‧‧縱向軌道 24‧‧‧ Longitudinal orbit
25‧‧‧升降台 25‧‧‧lifting platform
26‧‧‧馬達 26‧‧‧Motor
27‧‧‧側板 27‧‧‧Side
28‧‧‧支持框 28‧‧‧ Support Box
29‧‧‧剝離構件 29‧‧‧ peeling member
31‧‧‧供給用的導輥 31‧‧‧Guide roller for supply
32‧‧‧回收用的導輥 32‧‧‧Recycling guide roller
33‧‧‧夾輥 33‧‧‧Pinch roller
34‧‧‧張力輥 34‧‧‧Tension roller
35‧‧‧支持臂 35‧‧‧ support arm
36‧‧‧控制部 36‧‧‧Control Department
37‧‧‧判別部 37‧‧‧Discrimination Department
40‧‧‧異常部位 40‧‧‧ abnormal site
PT‧‧‧保護帶 PT‧‧‧Protection tape
Ts‧‧‧剝離帶 Ts‧‧‧ peel tape
W‧‧‧半導體晶圓 W‧‧‧Semiconductor wafer
r‧‧‧環狀凸部 r‧‧‧ annular projection
b‧‧‧扁平凹部 b‧‧‧ flat recess
d‧‧‧深度 d‧‧‧depth
t‧‧‧晶圓厚度 t‧‧‧ wafer thickness
圖1係半導體晶圓的部分斷裂斜視圖。 FIG. 1 is a partially broken perspective view of a semiconductor wafer.
圖2係半導體晶圓的背面側之斜視圖。 FIG. 2 is a perspective view of the back side of a semiconductor wafer.
圖3係半導體晶圓之部分縱剖視圖。 FIG. 3 is a longitudinal sectional view of a part of a semiconductor wafer.
圖4係保護帶剝離裝置之前視圖。 Figure 4 is a front view of the protective tape peeling device.
圖5係顯示保護帶剝離裝置的要部的概略構成之俯視圖。 5 is a plan view showing a schematic configuration of a main part of a protective tape peeling device.
圖6係保持台的縱剖視圖。 Fig. 6 is a longitudinal sectional view of a holding table.
圖7係顯示保護帶的剝離動作之圖。 FIG. 7 is a diagram showing a peeling operation of the protective tape.
圖8係顯示保護帶的剝離動作之圖。 FIG. 8 is a diagram showing a peeling operation of the protective tape.
圖9係顯示保護帶的剝離動作之圖。 FIG. 9 is a diagram showing a peeling operation of a protective tape.
圖10係顯示保護帶的剝離動作之圖。 FIG. 10 is a diagram showing a peeling operation of a protective tape.
以下，參照圖面以說明本發明的一實施例。此外，本實施例是以保護帶剝離裝置作為黏著帶剝離裝置為例作說明。又，本實施例乃例示從藉由環狀凸部在背面外周形成有補強部之半導體晶圓(以下，酌情稱為「晶圓」)將保護帶剝離之情況。 Hereinafter, an embodiment of the present invention will be described with reference to the drawings. In addition, in this embodiment, the protective tape peeling device is taken as an example for explanation. In addition, this embodiment illustrates a case where the protective tape is peeled from a semiconductor wafer (hereinafter, referred to as a “wafer” as appropriate) having a reinforcing portion formed on the outer periphery of the back surface by a ring-shaped convex portion.
晶圓W係如圖1至3所示，以在形成有圖案的表面貼附有保護帶PT而表面受到保護的狀態下進行過背面研磨處理的晶圓。其背面係以外周部在徑向保留約2mm的方式作磨削(背面研磨)。亦即，使用背面形成有扁平凹部b且加工成沿其外周殘存有環狀凸部r的形狀的晶圓。例如，被加工成扁平凹部b的深度d成為數百μm，磨削區的晶圓厚度t成為數十μm。因此，形成於背面外周的環狀凸部r係作用成提高晶圓W的剛性之環狀肋，俾抑制晶圓W在搬運或其他處理工程中之撓曲變形。 As shown in FIGS. 1 to 3, the wafer W is a wafer that has been subjected to back surface polishing in a state in which a protective tape PT is attached to the surface of the pattern and the surface is protected. The back surface is ground (back surface grinding) so that the outer peripheral portion remains in the radial direction by about 2 mm. That is, a wafer in which a flat concave portion b is formed on the back surface and processed into a shape in which a ring-shaped convex portion r remains along its outer periphery is used. For example, the depth d processed into the flat recessed portion b becomes several hundred μm, and the wafer thickness t in the grinding region becomes several tens of μm. Therefore, the ring-shaped convex portion r formed on the outer periphery of the back surface acts as a ring-shaped rib that increases the rigidity of the wafer W, and suppresses the wafer W from being deformed during transportation or other processing.
圖4係有關本發明的一實施例，為顯示保護帶剝離裝置的整體構成之前視圖；圖5係顯示保護帶剝離裝置的要部的概略構成之俯視圖；圖6係顯示保持台的概略構成之縱剖面。此外，本實施例的保護帶剝離裝置係相當於本發明的黏著帶剝離裝置。 FIG. 4 is a front view showing the overall configuration of the protective tape peeling device according to an embodiment of the present invention; FIG. 5 is a plan view showing a schematic structure of a main part of the protective tape peeling device; Longitudinal section. In addition, the protective tape peeling apparatus of this embodiment is equivalent to the adhesive tape peeling apparatus of this invention.
保護帶剝離裝置係如圖4所示，由保持台1、帶供給部2、剝離機構3及帶回收部4所構成。 As shown in FIG. 4, the protective tape peeling device includes a holding table 1, a tape supply section 2, a peeling mechanism 3, and a tape recovery section 4.
保持台1係如圖4至6所示，設有其直徑形成為接近晶圓W的背面之磨削區的直徑的凹部5。在該凹部5的外周部的環狀凸部6的表面，形成有作用於晶圓W的環狀凸部r之複數個吸附溝7。該吸附溝7係和外部的真空源8連通接續。 As shown in FIGS. 4 to 6, the holding table 1 is provided with a recessed portion 5 having a diameter close to the diameter of the grinding area on the back surface of the wafer W. A plurality of suction grooves 7 are formed on the surface of the annular convex portion 6 on the outer peripheral portion of the concave portion 5 and act on the annular convex portion r of the wafer W. The suction groove 7 is connected to an external vacuum source 8.
又，形成有複數個空氣供給孔10用以對由晶圓W的扁平凹部b與保持台1的凹部5所形成之空間9進行加壓。該空氣供給孔10係與隔著流路11配置在外部的空氣供給裝置12連通接續。又，在流路11備有用以檢測出空間9的壓力變化之壓力計13。而且，在環狀凸部6的側壁設有將空間9和外部連通之壓力控制用的針閥。此外，空氣供給裝置12係相當於本發明的加壓器，壓力計13係相當於本發明的檢測器。 In addition, a plurality of air supply holes 10 are formed to pressurize the space 9 formed by the flat concave portion b of the wafer W and the concave portion 5 of the holding table 1. The air supply hole 10 is connected to an air supply device 12 that is disposed outside through the flow path 11. A pressure gauge 13 is provided in the flow path 11 to detect a pressure change in the space 9. Further, a needle valve for pressure control that communicates the space 9 with the outside is provided on the side wall of the annular convex portion 6. The air supply device 12 corresponds to the pressurizer of the present invention, and the pressure gauge 13 corresponds to the detector of the present invention.
又，保持台1係如圖4所示，由可動台15所支持，該可動台15係以可沿著前後水平配備之左右一對的軌道14前後滑動的方式受到支持。然後，可動台15係透過利用脈衝馬達16正反驅動的螺桿17而藉由螺紋進給驅動。 As shown in FIG. 4, the holding table 1 is supported by a movable table 15 which is supported so as to be able to slide back and forth along a pair of left and right rails 14 provided horizontally. Then, the movable table 15 is driven by a screw feed through a screw 17 driven forward and backward by a pulse motor 16.
帶供給部2係將從原材輥導出的剝離帶Ts引導至後述的剝離單元20。 The tape supply unit 2 guides a peeling tape Ts derived from a raw material roll to a peeling unit 20 described later.
剝離機構3係具備剝離單元20。在遍及被豎立設置在裝置基台之左右一對的縱向框21之範圍下，固定著由鋁拉製材所構成的支持框22。在此支持框22的左右中央部位連結有箱形的基台23。又，經由設置在基台23的左右一對的縱向軌道24而被可滑動升降地支持的升降台25，係透過利用馬達26連結驅動的滾珠軸而升降。剝離單元20裝備於升降台25。 The peeling mechanism 3 includes a peeling unit 20. A support frame 22 made of an aluminum drawn material is fixed over a range of vertical frames 21 that are erected on a pair of left and right sides of the device base. A box-shaped abutment 23 is connected to the left and right central portions of the support frame 22. In addition, the lift table 25 which is slidably lifted via a pair of left and right longitudinal rails 24 provided on the base table 23 is raised and lowered by a ball shaft connected and driven by a motor 26. The peeling unit 20 is provided on the lifting platform 25.
升降台25建構成上下貫通的簍空的框狀。剝離單元20設在升降台25的左右所具備的側板27之內側下部。在及於兩側板27之範圍固定支持框28。在支持框28的中央裝設有剝離構件29。 The lifting platform 25 is formed in a hollow frame shape penetrating vertically. The peeling unit 20 is provided in the lower part of the inner side of the side plates 27 provided on the left and right sides of the lifting platform 25. The support frame 28 is fixed to the area on both side plates 27. A peeling member 29 is attached to the center of the support frame 28.
剝離構件29係為比晶圓W的直徑短的板狀且形成越朝向前端越細的錐狀。該剝離構件29被以斜下傾斜的姿勢固定。 The peeling member 29 has a plate shape shorter than the diameter of the wafer W and is formed in a tapered shape that becomes thinner toward the tip. The peeling member 29 is fixed in an obliquely downwardly inclined posture.
又，剝離機構3的供給用的導輥31在側板27的後方被軸樞支撐成可空轉自如。又，在剝離單元20的上方配備有複數支回收用的導輥32、夾輥33及張力輥34。 The supply guide roller 31 for the peeling mechanism 3 is pivotally supported at the rear of the side plate 27 so as to be freely rotatable. Further, a plurality of recovery guide rollers 32, a nip roller 33, and a tension roller 34 are provided above the peeling unit 20.
回收用的導輥32係被軸樞支撐成空轉自如。張力輥34係空轉自如地設於支持臂35，配備成經由該支持臂35而可搖動。因此，張力輥34係賦予被引導捲回的剝離帶Ts適度的張力。 The guide roller 32 for recovery is supported by the shaft so as to be free to rotate. The tension roller 34 is provided on the support arm 35 freely and is provided so as to be swingable via the support arm 35. Therefore, the tension roller 34 imparts a moderate tension to the peeled tape Ts which is guided and wound.
此等回收用的導輥32及張力輥34係建構成比晶圓W的直徑大的長度之寬幅輥，並且其外周面成為被塗布氟樹脂的難接著面。 These recovery guide rollers 32 and tension rollers 34 are wide rollers that constitute a length larger than the diameter of the wafer W, and the outer peripheral surfaces thereof are difficult to adhere surfaces coated with fluororesin.
供給用的導輥31被建構成：比剝離帶Ts的寬度長且比晶圓W的直徑短的窄幅輥。 The supply guide roller 31 is configured as a narrow-width roller that is longer than the width of the release tape Ts and shorter than the diameter of the wafer W.
帶回收部4係將從剝離單元20送出的剝離帶Ts捲繞回收。 The tape recovery unit 4 winds and recovers the release tape Ts sent from the release unit 20.
其次，針對上述實施例裝置一個循環的動作，依據圖7至圖9作說明。 Next, a cyclic operation of the apparatus of the above embodiment will be described with reference to FIGS. 7 to 9.
藉由未圖示的搬運機器人，將經背面磨削後的貼附著保護帶PT的晶圓W以晶圓背面的環狀凸部r於保持台1的環狀凸部6之上重合的方式載置。 The wafer W with the protective tape PT after the back grinding is superimposed on the annular protrusion r on the wafer back surface on the annular protrusion 6 of the holding table 1 by a conveying robot (not shown). Place.
保持台1係當被載置晶圓W時，就藉由形成於環狀凸部6的吸附溝7將晶圓W的環狀凸部r吸附保 持。之後，使空氣供給裝置12作動以開始對藉由晶圓W所密閉的保持台1的空間9供給空氣。此時，如圖7所示，對空間9加壓迄至晶圓W的表面朝上稍外突的程度。 When the wafer W is placed on the holding table 1, the annular convex portion r of the wafer W is adsorbed and held by an adsorption groove 7 formed in the annular convex portion 6. hold. After that, the air supply device 12 is operated to start supplying air to the space 9 of the holding table 1 sealed by the wafer W. At this time, as shown in FIG. 7, the space 9 is pressurized until the surface of the wafer W projects upward slightly.
當空間9達到既定壓力時，將晶圓W吸附保持的保持台1係從待機位置朝剝離帶Ts的貼附開始位置移動。接著，馬達26作動使剝離單元20下降至既定高度。亦即，如圖8所示，繞掛在剝離構件29的剝離帶Ts被推壓於晶圓W上的保護帶PT的端部而貼附。 When the space 9 reaches a predetermined pressure, the holding table 1 that sucks and holds the wafer W is moved from the standby position to the attachment start position of the peeling tape Ts. Then, the motor 26 is operated to lower the peeling unit 20 to a predetermined height. That is, as shown in FIG. 8, the release tape Ts wound around the release member 29 is pressed against the end portion of the protective tape PT on the wafer W and attached.
之後，保持台1係前進移動。此時，藉由剝離構件29以使晶圓W的朝上的彎曲回復成平坦的方式一邊推壓一邊將剝離帶Ts貼附於保護帶PT。同時，藉由剝離構件29一邊使剝離帶Ts折返一邊將保護帶PT一體地從晶圓W的表面逐漸剝離。此外，與該剝離動作同步地將剝離帶Ts從帶供給部2放出，並藉由帶回收部4逐漸捲繞回收貼附著使用後的保護帶PT之剝離帶Ts。 After that, the holding table 1 moves forward. At this time, the peeling tape Ts is attached to the protective tape PT by pressing the peeling member 29 so as to return the upward bending of the wafer W to be flat. At the same time, the peeling member 29 gradually peels off the protective tape PT from the surface of the wafer W integrally while turning the peeling tape Ts back. In addition, the release tape Ts is released from the tape supply unit 2 in synchronization with the peeling operation, and the release tape Ts of the protective tape PT after the recovery tape is used is gradually wound by the tape recovery unit 4.
在此保護帶PT的剝離過程，藉由控制部36將來自於空氣供給裝置12的空氣之供給量保持一定並將空間9的壓力保持一定。亦即，藉由壓力計13依序監控空間9的壓力。 In the peeling process of the protective tape PT, the supply amount of air from the air supply device 12 is kept constant by the control unit 36 and the pressure of the space 9 is kept constant. That is, the pressure of the space 9 is sequentially monitored by the pressure gauge 13.
然而，如圖9所示，於保護帶PT的剝離過程將保護帶PT剝離而在表面露出的晶圓W上產生裂痕或破損等之異常部位40時，空氣從該異常部位漏洩使空間9的壓力降低。當壓力計13檢測出該壓力降低之變化時，將該檢測信號傳送至控制部36。 However, as shown in FIG. 9, when the protective tape PT is peeled off during the peeling process of the protective tape PT and an abnormal portion 40 such as a crack or breakage is generated on the exposed wafer W, air leaks from the abnormal portion and the space 9 Reduced pressure. When the pressure gauge 13 detects a change in the pressure drop, the detection signal is transmitted to the control section 36.
亦即，控制部36係以判別部37判別實測值是否落在記憶體等之記憶裝置所預先記憶的壓力的基準範圍內。若實測值小於預先決定的基準範圍，則判斷破損、裂痕等之異常部位產生在晶圓W上。該異常部位係利用編碼器或脈衝馬達16的脈衝數等，依貼附剝離帶Ts的開始位置起算的移動距離求得位置座標。該位置座標被記錄於記憶裝置。位置座標係可從記憶裝置讀出並顯示於監視器等作確認。 That is, the control unit 36 uses the determination unit 37 to determine whether or not the measured value falls within a reference range of the pressure stored in advance by a memory device such as a memory. If the actual measurement value is smaller than a predetermined reference range, it is determined that abnormal portions such as breakage and cracks are generated on the wafer W. The position of the abnormality is obtained by using the number of pulses of the encoder or the pulse motor 16 and the like based on the moving distance from the start position of the adhesive tape Ts. The position coordinates are recorded in a memory device. The position coordinate system can be read from the memory device and displayed on the monitor for confirmation.
如圖10所示，當保護帶PT從晶圓W的表面被完全剝離時，剝離單元20係上升並返回初期位置以準備下一個處理。 As shown in FIG. 10, when the protective tape PT is completely peeled from the surface of the wafer W, the peeling unit 20 is raised and returned to the initial position to prepare for the next process.
又，已剝離掉保護帶PT的晶圓W係藉由保持台1移動到交付位置。 The wafer W from which the protective tape PT has been peeled is moved to the delivery position by the holding table 1.
以上結束實施例裝置的一個循環的動作，之後，反復相同的動作迄達既定片數為止。 As described above, the operation of one cycle of the apparatus of the embodiment is ended, and thereafter, the same operation is repeated up to a predetermined number of pieces.
依據上述實施例裝置，由於剝離被覆表面的保護帶PT，氣體會從產生在晶圓W的表面之異常部位漏洩。藉由壓力計13檢測出依該漏洩而變化的空間9之壓力變化，而可檢測出異常部位。亦即，在檢測出異常部位的情況，由於可從所檢測出的位置座標來特定異常部位，故可施以快速的處置。例如，可快速地除去碎片等。再者，亦可將不良品的晶圓W從生產線除去。因此，可避免裝置及生產線不必要的停止。 According to the apparatus of the above-mentioned embodiment, since the protective tape PT of the covering surface is peeled off, gas may leak from an abnormal portion generated on the surface of the wafer W. The pressure gauge 13 detects a change in the pressure of the space 9 that changes due to the leakage, and an abnormal portion can be detected. That is, when an abnormal part is detected, since the abnormal part can be identified from the detected position coordinates, a quick treatment can be performed. For example, debris can be quickly removed. In addition, the defective wafer W may be removed from the production line. Therefore, unnecessary stopping of the device and the production line can be avoided.
此外，本發明亦能利用以下的形態實施。 The present invention can also be implemented in the following forms.
(1)上述實施例中可利用流量計來取代壓力計13。在產生裂痕的情況，因為空間9的壓力會降低，故控制部36為將空間9的壓力保持一定而操作空氣供給裝置12以增加空氣的流量。因此，從空氣的流量變化可檢測出裂痕的產生。 (1) In the above embodiment, a flow meter may be used instead of the pressure gauge 13. In the case where cracks occur, the pressure of the space 9 decreases, so the control unit 36 operates the air supply device 12 to maintain a constant pressure of the space 9 to increase the air flow rate. Therefore, the occurrence of cracks can be detected from changes in the air flow rate.
此外，本實施例中亦可同時利用壓力計和流量計。 In addition, in this embodiment, a pressure gauge and a flow meter can also be used at the same time.
(2)上述實施例中係控制剝離單元20的下降將剝離帶Ts貼附於保護帶PT，但亦能以使保持台1對不進行升降作動的剝離單元20進行升降作動的形態來實施。又，亦可建構成：固定保持台1且使剝離單元20移動。 (2) In the above embodiment, the lowering of the peeling unit 20 is controlled, and the peeling tape Ts is attached to the protective tape PT. However, the peeling unit 20 may be lifted and lowered by the holding table 1 without lifting the peeling unit 20. A configuration may also be adopted in which the holding table 1 is fixed and the peeling unit 20 is moved.
(3)上述各實施例中即便是檢測出異常部位亦將保護帶PT從晶圓W完全地剝離，但亦可在檢測出異常部位的時間點停止剝離動作而將碎片等除去。 (3) In each of the above embodiments, the protective tape PT is completely peeled from the wafer W even if an abnormal part is detected, but the peeling operation may be stopped at the time when the abnormal part is detected to remove debris or the like.
(4)上述各實施例中，亦可適用於例如將與晶圓W大致相同形狀的不鏽鋼或玻璃基板等之補強用的支持板貼合的雙面黏著帶從晶圓W剝離的情況。 (4) In the above embodiments, for example, it is also applicable to a case where a double-sided adhesive tape for bonding a supporting plate for reinforcement, such as a stainless steel or glass substrate having a shape substantially the same as that of the wafer W, is peeled from the wafer W.
(5)上述實施例裝置亦可利用在將貼附於背面整體已均一磨削的晶圓W上的保護帶PT或雙面黏著帶予以剝離者。 (5) The device of the above embodiment can also be peeled off by using the protective tape PT or the double-sided adhesive tape attached to the wafer W which has been uniformly ground on the entire back surface.
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| JP7146457B2 (en) | 2018-05-31 | 2022-10-04 | 日東電工株式会社 | Adhesive tape peeling method and adhesive tape peeling device |
| CN115380368A (en) * | 2020-05-25 | 2022-11-22 | 恩基恩株式会社 | Semiconductor chip layering device and control method thereof |
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| JP2009016438A (en) * | 2007-07-02 | 2009-01-22 | Nitto Denko Corp | Method for sticking adhesive tape on semiconductor wafer, and method for peeling protective tape |
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| JP3435380B2 (en) * | 2000-02-21 | 2003-08-11 | 共進電機株式会社 | Si wafer inspection apparatus and Si wafer inspection method |
| JP4641984B2 (en) * | 2006-07-31 | 2011-03-02 | 日東電工株式会社 | Adhesive tape affixing method to semiconductor wafer and protective tape peeling method from semiconductor wafer |
| CN201803915U (en) * | 2010-06-22 | 2011-04-20 | 京东方科技集团股份有限公司 | Inspection equipment of glass substrates and dry etching equipment |
| CN202814826U (en) * | 2012-06-05 | 2013-03-20 | 震宇（芜湖）实业有限公司 | Device for detecting crack defect of plastic part |
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| JP2009016438A (en) * | 2007-07-02 | 2009-01-22 | Nitto Denko Corp | Method for sticking adhesive tape on semiconductor wafer, and method for peeling protective tape |
| JP2011086772A (en) * | 2009-10-15 | 2011-04-28 | Disco Abrasive Syst Ltd | Protective-tape peeling device |
| JP2013131537A (en) * | 2011-12-20 | 2013-07-04 | Disco Abrasive Syst Ltd | Method of determining cracking of plate-like work |
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