TWI663676B - Load lock cavity and method for processing substrate using the load lock cavity - Google Patents

Load lock cavity and method for processing substrate using the load lock cavity Download PDF

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Publication number
TWI663676B
TWI663676B TW102127451A TW102127451A TWI663676B TW I663676 B TWI663676 B TW I663676B TW 102127451 A TW102127451 A TW 102127451A TW 102127451 A TW102127451 A TW 102127451A TW I663676 B TWI663676 B TW I663676B
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Taiwan
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chamber
substrate
load
support frame
base
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TW102127451A
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Chinese (zh)
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TW201408569A (en
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王堅
何增華
方志友
賈照偉
王暉
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大陸商盛美半導體設備(上海)有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6732Vertical carrier comprising wall type elements whereby the substrates are horizontally supported, e.g. comprising sidewalls

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

本發明公開了一種載鎖腔,包括:腔室,所述腔室具有第一真空閥門和第二真空閥門;夾盤,所述夾盤具有收容於所述腔室的夾座,所述夾座用於放置基板,所述夾座的外邊緣設有至少兩個凹槽;支撐架,所述支撐架收容於所述腔室並位於所述夾座的上方,所述支撐架具有至少兩個連接部,每個連接部向所述支撐架的軸心方向水平凸伸出數個支撐台,每一支撐台具有一承載部,所述承載部位於所述夾座的凹槽內,各連接部上同一層的承載部與所述夾座平行並能托住一片基板;以及至少一升降機構,用於升高或降低所述支撐架的連接部。本發明載鎖腔結構簡單,能夠處理多片基板,因此提高了工藝效率。本發明還公開了使用該載鎖腔處理基板的方法。 The invention discloses a load-locking chamber, comprising: a chamber, the chamber having a first vacuum valve and a second vacuum valve; a chuck, the chuck having a clamp seat received in the chamber, the clamp A base is used to place a substrate, and at least two grooves are provided on the outer edge of the clamp base; a support frame, the support frame is received in the chamber and is located above the clamp base, and the support frame has at least two Connecting portions, each connecting portion protrudes horizontally from the supporting frame in the direction of the axis of the supporting frame, each supporting portion has a supporting portion, the supporting portion is located in the groove of the clamp seat, each The load-bearing portion on the same layer on the connecting portion is parallel to the clamp seat and can support a substrate; and at least one lifting mechanism is used to raise or lower the connecting portion of the support frame. The carrier lock cavity of the present invention has a simple structure and can process multiple substrates, thereby improving process efficiency. The invention also discloses a method for processing a substrate by using the load lock cavity.

Description

載鎖腔及使用該載鎖腔處理基板的方法 Load lock cavity and method for processing substrate using the load lock cavity

本發明關於一種半導體器件製造裝置,尤其關於一種載鎖腔及使用該載鎖腔處理基板的方法。 The invention relates to a semiconductor device manufacturing device, in particular to a load lock cavity and a method for processing a substrate using the load lock cavity.

在半導體器件的製造過程中,常用載鎖腔作為真空腔與大氣之間的中轉腔,為了提高工藝效率,部分載鎖腔具有加熱或冷卻功能以適於對半導體基板進行預加熱或後冷卻,由此減少半導體基板在工藝腔中的佔用時間。 In the manufacturing process of semiconductor devices, a load-lock chamber is commonly used as a transit cavity between a vacuum chamber and the atmosphere. In order to improve the process efficiency, some load-lock chambers have heating or cooling functions suitable for pre-heating or post-cooling semiconductor substrates. , Thereby reducing the occupation time of the semiconductor substrate in the process cavity.

例如在美國公開專利US 2011/0308458中揭露了一種載鎖腔,該載鎖腔包括四個由層疊配置的結構構成的腔體,其中兩個腔體作為裝載腔用於裝載工藝前的大面積基板,另外兩個腔體作為卸載腔用於裝載工藝後的大面積基板。裝載腔和卸載腔分別具有第一出入口和第二出入口以及用來放置一片大面積基板的載物台。在裝載腔的載物台上設有用於預熱大面積基板的預熱部件,在卸載腔的載物台上設有用於降低大面積基板溫度的冷卻部件。大面積基板透過大氣機械手搬入裝載腔或從卸載腔搬出。當大氣機械手將大面積基板搬入裝載腔或從卸載腔搬出時,裝載腔和卸載腔保持大氣壓狀態。在工藝腔與載鎖腔之間配置有傳輸腔,該傳輸腔分別與工藝腔及載鎖腔的裝載腔和卸載腔相通,傳輸腔中設置有真空機械手用於在工藝腔與 裝載腔及卸載腔之間傳輸大面積基板。當真空機械手從裝載腔卸載大面積基板或向卸載腔裝載大面積基板時,裝載腔或卸載腔保持真空狀態,即裝載腔或卸載腔中的壓強與傳輸腔中的一致。 For example, in U.S. published patent US 2011/0308458, a load-locking cavity is disclosed. The load-locking cavity includes four cavities composed of a stacked structure, two of which are used as loading cavities for loading a large area before the process. The substrate and the other two cavities serve as unloading cavities for the large-area substrate after the loading process. The loading cavity and the unloading cavity respectively have a first entrance and a second entrance, and a stage for placing a large-area substrate. A preheating part for preheating a large-area substrate is provided on a stage of the loading chamber, and a cooling part for reducing the temperature of the large-area substrate is provided on the stage of the unloading chamber. Large-area substrates are carried into the loading cavity or unloaded from the unloading cavity through an atmospheric robot. When the atmospheric robot moves a large-area substrate into the loading chamber or out of the unloading chamber, the loading chamber and the unloading chamber maintain an atmospheric pressure state. A transmission cavity is arranged between the process cavity and the load-locking cavity, and the transmission cavity is in communication with the process cavity and the loading and unloading cavity of the load-locking cavity, respectively. A vacuum manipulator is provided in the transmission cavity for the process cavity and the load-lock cavity. A large-area substrate is transferred between the loading cavity and the unloading cavity. When a vacuum robot unloads a large-area substrate from a loading chamber or loads a large-area substrate into a unloading chamber, the loading chamber or unloading chamber remains in a vacuum state, that is, the pressure in the loading chamber or unloading chamber is the same as that in the transfer chamber.

使用上述載鎖腔處理大面積基板時,在大氣機械手將大面積基板搬入裝載腔之前,先向裝載腔中注入氮氣,使得裝載腔中的壓強與外界大氣壓一致,然後裝載腔的第一出入口打開,大氣機械手將一片大面積基板搬入裝載腔並放置在裝載腔的載物台上,裝載腔的第一出入口關閉,裝載腔被抽真空,放置在裝載腔的載物台上的大面積基板被加熱。大面積基板被加熱至設定溫度後,裝載腔的第二出入口打開,真空機械手從裝載腔中取出大面積基板並將大面積基板放入工藝腔中進行工藝處理。工藝處理結束後,真空機械手從工藝腔中取出大面積基板,同時,卸載腔被抽真空,當卸載腔中的壓強與傳輸腔中的壓強一致時,卸載腔的第二出入口打開,真空機械手將大面積基板搬入卸載腔並放置在卸載腔的載物台上進行冷卻。大面積基板的溫度冷卻至設定值時,向卸載腔中注入氮氣,使卸載腔的壓強與大氣壓一致,打開卸載腔的第一出入口,大氣機械手將大面積基板從卸載腔中取出。 When using the load-lock chamber to process a large-area substrate, before the atmospheric robot moves the large-area substrate into the loading chamber, nitrogen is injected into the loading chamber so that the pressure in the loading chamber is consistent with the external atmospheric pressure, and then the first entrance and exit of the loading chamber Open, the atmospheric robot moves a large-area substrate into the loading chamber and places it on the stage of the loading chamber. The first entrance of the loading chamber is closed. The loading chamber is evacuated and placed on a large area of the stage of the loading chamber. The substrate is heated. After the large-area substrate is heated to a set temperature, the second inlet and outlet of the loading chamber are opened, and the vacuum robot removes the large-area substrate from the loading chamber and places the large-area substrate into the processing chamber for processing. After the process is completed, the vacuum robot removes the large-area substrate from the process chamber, and at the same time, the unloading chamber is evacuated. When the pressure in the unloading chamber is consistent with the pressure in the transfer chamber, the second inlet and outlet of the unloading chamber are opened, and the vacuum machinery The large-area substrate is carried into the unloading chamber by hand and placed on the stage of the unloading chamber for cooling. When the temperature of the large-area substrate is cooled to a set value, nitrogen gas is injected into the unloading cavity to make the pressure of the unloading cavity consistent with the atmospheric pressure. The first inlet and outlet of the unloading cavity are opened, and the atmospheric robot removes the large-area substrate from the unloading cavity.

由上述可知,使用該載鎖腔對大面積基板預加熱或後冷卻時,裝載腔或卸載腔每加熱或冷卻一片大面積基板,裝載腔或卸載腔都需要被注入氮氣和抽真空,導致該載鎖腔處理大面積基板的效率很低,無法滿足現代工藝 的需求。 It can be known from the above that when using the load lock cavity to pre-heat or cool the large-area substrate, the loading cavity or unloading cavity needs to be filled with nitrogen and evacuated each time a large-area substrate is heated or cooled. The load-carrying cavity is inefficient in processing large-area substrates and cannot meet modern processes Demand.

本發明的目的是針對上述背景技術存在的缺陷提供一種結構簡單、能夠提高工藝效率的載鎖腔。 An object of the present invention is to provide a load-locking cavity with a simple structure and improved process efficiency in response to the defects existing in the background art.

為達成上述目的,本發明提供的載鎖腔,包括:腔室,所述腔室具有第一真空閥門和第二真空閥門;夾盤,所述夾盤具有收容於所述腔室的夾座,所述夾座用於放置基板,所述夾座的外邊緣設有至少兩個凹槽;支撐架,所述支撐架收容於所述腔室並位於所述夾座的上方,所述支撐架具有至少兩個連接部,每個連接部向所述支撐架的軸心方向水平凸伸形成數個支撐台,每一支撐台具有一承載部,所述承載部位於所述夾座的凹槽內,各連接部上同一層的承載部與所述夾座平行並能托住一片基板;以及至少一升降機構,用於升高或降低所述支撐架的連接部。 In order to achieve the above object, the present invention provides a load-locking cavity, including: a chamber having a first vacuum valve and a second vacuum valve; a chuck having a clamp seat received in the chamber The clamp base is used to place a substrate, and the outer edge of the clamp base is provided with at least two grooves; a support frame, the support frame is received in the chamber and is located above the clamp base, and the support The frame has at least two connecting portions, each connecting portion is projected horizontally in the direction of the axis of the support frame to form a plurality of supporting tables, each supporting table has a bearing portion, and the bearing portion is located in the recess of the clamp seat. In the groove, a bearing portion of the same layer on each connecting portion is parallel to the clamping seat and can support a substrate; and at least one lifting mechanism is used to raise or lower the connecting portion of the support frame.

本發明還提供了一種使用上述載鎖腔處理多片基板的方法,包括:a)向腔室內注入惰性氣體直至腔室內的壓強與外界大氣壓一致;b)打開第一真空閥門,並將數片基板放置在承載部上;c)關閉第一真空閥門,並將腔室抽真空;d)降低支撐架,使最下層的承載部上的基板位於夾座的上方並與夾座保持一定距離或者使最下層的承載部上的基板放在夾座上進行處理;e)升高支撐架,已被處理的基板由最下層的承載部托 住;f)打開第二真空閥門,並將已被處理的基板從腔室中取走;g)重復上述步驟d)~f)直到承載部上的基板都被處理並從腔室中取走。 The present invention also provides a method for processing multiple substrates using the above-mentioned load-lock chamber, including: a) injecting an inert gas into the chamber until the pressure in the chamber is consistent with the external atmospheric pressure; b) opening the first vacuum valve, and The substrate is placed on the carrier; c) the first vacuum valve is closed and the chamber is evacuated; d) the support frame is lowered so that the substrate on the lowermost carrier is located above the holder and maintains a certain distance from the holder or Place the substrate on the lowest-level carrier on the holder for processing; e) Raise the support frame, and the processed substrate is held by the lowest-level carrier F) Open the second vacuum valve and remove the processed substrate from the chamber; g) Repeat the above steps d) ~ f) until the substrates on the carrier are processed and removed from the chamber .

本發明還提供了另一種使用上述載鎖腔處理多片基板的方法,包括:a)將腔室抽真空;b)打開第二真空閥門,並將一片基板放置在頂層的承載部上;c)降低支撐架,使頂層的承載部上的基板放在夾座上進行處理;d)升高支撐架,已被處理的基板由頂層的承載部托住;e)重復上述步驟b)~d)直到所有層的承載部都有托住已被處理的基板;f)關閉第二真空閥門,並向腔室內注入惰性氣體直至腔室內的壓強與外界大氣壓一致;g)打開第一真空閥門,並將已被處理的基板從腔室中取走。 The present invention also provides another method for processing multiple substrates by using the above-mentioned load-locking cavity, including: a) evacuating the chamber; b) opening a second vacuum valve and placing a substrate on a top-loading portion; c ) Lower the support frame, so that the substrate on the top-level load-bearing portion is placed on the clamp seat for processing; d) Raise the support frame, and the processed substrate is supported by the top-level load-bearing portion; e) Repeat the above steps b) ~ d ) Until all layers of the load-bearing parts support the substrate that has been processed; f) close the second vacuum valve and inject inert gas into the chamber until the pressure in the chamber is consistent with the external atmospheric pressure; g) open the first vacuum valve, The processed substrate is removed from the chamber.

綜上所述,本發明載鎖腔結構簡單,能夠處理多片基板,同時,載鎖腔只需要注入一次惰性氣體和抽一次真空,因此能夠大大提高工藝效率。 In summary, the load lock cavity of the present invention has a simple structure and can handle multiple substrates. At the same time, the load lock cavity only needs to inject an inert gas and evacuate once, so the process efficiency can be greatly improved.

10‧‧‧腔室 10‧‧‧ chamber

11‧‧‧第一真空閥門 11‧‧‧The first vacuum valve

12‧‧‧第二真空閥門 12‧‧‧Second Vacuum Valve

20‧‧‧夾盤 20‧‧‧ chuck

21‧‧‧夾座 21‧‧‧clip

22‧‧‧支桿 22‧‧‧ Rod

23‧‧‧凹槽 23‧‧‧Groove

30‧‧‧支撐架 30‧‧‧ support

31‧‧‧基體 31‧‧‧ Matrix

32‧‧‧連接部 32‧‧‧Connecting Department

33‧‧‧支撐台 33‧‧‧Support

40‧‧‧升降機構 40‧‧‧Lifting mechanism

50‧‧‧馬達 50‧‧‧ Motor

60‧‧‧加熱裝置 60‧‧‧Heating device

70‧‧‧冷卻裝置 70‧‧‧cooling device

80‧‧‧溫度感測器 80‧‧‧Temperature sensor

100‧‧‧載鎖腔 100‧‧‧load lock cavity

331‧‧‧基部 331‧‧‧base

332‧‧‧承載部 332‧‧‧bearing department

333‧‧‧引導部 333‧‧‧Guide

334‧‧‧限位部 334‧‧‧Limiting Department

圖1是本發明載鎖腔的剖面圖。 Fig. 1 is a sectional view of a load-locking cavity according to the present invention.

圖2是本發明載鎖腔的夾盤與支撐架組裝後的立體圖。 FIG. 2 is a perspective view of an assembly of a chuck and a support frame of a lock cavity according to the present invention.

圖3是支撐台的立體圖。 Fig. 3 is a perspective view of a support base.

圖4是夾盤的立體圖。 Fig. 4 is a perspective view of a chuck.

圖5是夾盤的剖面圖。 Fig. 5 is a sectional view of a chuck.

圖6是使用本發明載鎖腔加熱兩片基板的工藝流程示意圖。 FIG. 6 is a schematic flow chart of a process for heating two substrates using the load-lock chamber of the present invention.

圖7是使用本發明載鎖腔冷卻兩片基板的工藝流程示意圖。 FIG. 7 is a schematic flow chart of a process for cooling two substrates using the load-lock chamber of the present invention.

為詳細說明本發明的技術內容、構造特徵、所達成目的及功效,下面將結合實施例並配合圖式予以詳細說明。 In order to explain the technical content, structural features, achieved objectives, and effects of the present invention in detail, the following will be described in detail with reference to the embodiments and the drawings.

請參閱圖1和圖2,本發明載鎖腔100包括腔室10、夾盤20、支撐架30、至少一升降機構40及馬達50。腔室10具有第一真空閥門11及第二真空閥門12,打開第一真空閥門11,腔室10與外界大氣相連通,打開第二真空閥門12,腔室10與傳輸腔(圖中未示)相連通。第一真空閥門11和第二真空閥門12能夠獨立的上下移動從而打開或關閉腔室10。 Please refer to FIG. 1 and FIG. 2. The lock chamber 100 of the present invention includes a chamber 10, a chuck 20, a support frame 30, at least one lifting mechanism 40 and a motor 50. The chamber 10 has a first vacuum valve 11 and a second vacuum valve 12. When the first vacuum valve 11 is opened, the chamber 10 is in communication with the outside atmosphere. When the second vacuum valve 12 is opened, the chamber 10 is connected to a transmission chamber (not shown in the figure). ) Connected. The first vacuum valve 11 and the second vacuum valve 12 can move up and down independently to open or close the chamber 10.

請參閱圖2至圖4,夾盤20具有用來放置基板的圓形夾座21及用來支撐夾座21的圓柱形支桿22。夾座21收容於腔室10內,支桿22的一端與夾座21的中部相 連,另一端穿出腔室10。夾座21的外邊緣向其中部凹陷形成凹槽23,凹槽23至少有兩個,在本實施例中,凹槽23有四個且對稱分佈在夾座21的外邊緣。 Please refer to FIGS. 2 to 4. The chuck 20 has a circular clamping base 21 for placing a substrate and a cylindrical supporting rod 22 for supporting the clamping base 21. The clamp base 21 is accommodated in the chamber 10, and one end of the support rod 22 is opposite to the middle of the clamp base 21. Even, the other end penetrates the chamber 10. The outer edge of the clip base 21 is recessed toward the middle to form a groove 23. There are at least two grooves 23. In this embodiment, there are four grooves 23 distributed symmetrically on the outer edge of the clip base 21.

支撐架30收容於腔室10內並位於夾座21的上方,支撐架30具有圓環形基體31及從基體31向下延伸的至少兩個連接部32,在本實施例中,連接部32為四個。每個連接部32向支撐架30的軸心方向水平凸伸形成數個支撐台33,該數個支撐台33由層疊配置的結構構成,支撐台33與連接部32垂直連接且與夾盤20的夾座21平行,每相鄰的兩個支撐台33之間間隔一定距離。 The support frame 30 is accommodated in the chamber 10 and is located above the clamp seat 21. The support frame 30 has a circular base 31 and at least two connecting portions 32 extending downward from the base 31. In this embodiment, the connecting portion 32 For four. Each connecting portion 32 projects horizontally in the axial direction of the support frame 30 to form a plurality of support bases 33. The support bases 33 are composed of a stacked structure. The support bases 33 are vertically connected to the connecting portion 32 and are connected to the chuck 20 The clamp bases 21 are parallel, and each adjacent two support bases 33 are spaced a certain distance apart.

請結合圖3,每個支撐台33具有與連接部32垂直相連的基部331,該基部331用於增大連接部32間的距離,以便能夠將基板放置在夾盤20的夾座21上。基部331向下傾斜形成傾斜的引導部333後再向支撐架30的軸心方向水平延伸形成承載部332,承載部332收容於夾座21的相應凹槽23內。每個支撐台33還具有限位部334,限位部334的頂端連接引導部333,限位部334的底端連接承載部332。 Referring to FIG. 3, each support base 33 has a base portion 331 vertically connected to the connecting portion 32. The base portion 331 is used to increase the distance between the connecting portions 32 so that the substrate can be placed on the clamping base 21 of the chuck 20. The base portion 331 is inclined downward to form an inclined guide portion 333 and then horizontally extends in the axial center direction of the support frame 30 to form a bearing portion 332. The bearing portion 332 is received in a corresponding groove 23 of the holder 21. Each support base 33 further has a limiting portion 334. A top end of the limiting portion 334 is connected to the guide portion 333, and a bottom end of the limiting portion 334 is connected to the bearing portion 332.

請參閱圖1,在本實施例中,升降機構40有兩個且設置在腔室10的外部,升降機構40與支撐架30的基體31相連用來升高或降低支撐架30。如果支撐架30沒有基體31,也可以使用四個升降機構40,該四個升降機構40分別與四個連接部32相連,同時升高或降低四個連接部32。馬達50配置在夾盤20的支桿22的底部,用來升高或 降低夾盤20。 Referring to FIG. 1, in this embodiment, there are two lifting mechanisms 40 and are disposed outside the chamber 10. The lifting mechanism 40 is connected to the base 31 of the support frame 30 to raise or lower the support frame 30. If the support frame 30 does not have the base body 31, four lifting mechanisms 40 can also be used. The four lifting mechanisms 40 are respectively connected to the four connecting portions 32, and the four connecting portions 32 are raised or lowered at the same time. The motor 50 is arranged at the bottom of the support rod 22 of the chuck 20 and is used for raising or Lower the chuck 20.

請參閱圖5,加熱裝置60和冷卻裝置70分別設置在夾盤20內,用來獨立的加熱或冷卻放置在夾座21上的基板。具體的,加熱裝置60可以是電阻型加熱器,冷卻裝置70可以是冷卻液循環裝置。溫度感測器80設置在夾盤20內用來探測夾座21的溫度。 Referring to FIG. 5, the heating device 60 and the cooling device 70 are respectively disposed in the chuck 20 and are used to independently heat or cool the substrate placed on the chuck 21. Specifically, the heating device 60 may be a resistance heater, and the cooling device 70 may be a cooling liquid circulation device. The temperature sensor 80 is disposed in the chuck 20 to detect the temperature of the chuck base 21.

請參閱圖6,當載鎖腔100作為裝載腔使用時,第一真空閥門11和第二真空閥門12都關閉。向腔室10內注入氮氣或其他惰性氣體以調節腔室10內的壓強直到腔室10內的壓強與外界大氣壓一致,然後打開第一真空閥門11,大氣機械手(圖中未示)將數片基板放置在支撐架30的承載部332上,各連接部32上同一層的承載部332與夾盤20的夾座21平行並托住一片基板。在本實施例中,每一連接部32上有五個承載部332,因此,支撐架30可以一次裝載五片基板,圖中僅示意兩片基板。等到數片基板都放置在承載部332上後,關閉第一真空閥門11,腔室10被抽真空,腔室10內的壓強與傳輸腔內的壓強一致。如果承載部332上的基板需要加熱,升降機構40降低支撐架30,位於最下層的承載部332上的基板被降低至夾座21的上方,為了提高工藝效率,此時的夾座21已預加熱至一定溫度,為了使基板加熱的更均勻,基板與夾座21保持一定距離。如果承載部332上的基板需要冷卻,升降機構40降低支撐架30使位於最下層的承載部332上的基板降低並被放到已預先冷卻的夾座21上。當基板的溫度達到預設的溫 度後,升降機構40升高支撐架30,已被加熱或冷卻的基板仍位於最下層的承載部332上。打開第二真空閥門12,傳輸腔中的真空機械手將已被加熱或冷卻的基板從腔室10中取走。採用相同的方式,承載部332上的基板被逐一加熱或冷卻並被真空機械手從腔室10中取走。在上述過程中,可以使支撐架30保持不動,而透過馬達50升高或降低夾盤20,或者同時使支撐架30和夾盤20保持相對運動。 Referring to FIG. 6, when the load lock chamber 100 is used as a load chamber, both the first vacuum valve 11 and the second vacuum valve 12 are closed. Inject nitrogen or other inert gas into the chamber 10 to adjust the pressure in the chamber 10 until the pressure in the chamber 10 is consistent with the external atmospheric pressure. Then, the first vacuum valve 11 is opened, and the atmospheric manipulator (not shown) counts The sheet substrate is placed on the supporting portion 332 of the support frame 30, and the supporting portions 332 on the same layer on each connecting portion 32 are parallel to the clamping base 21 of the chuck 20 and support one substrate. In this embodiment, there are five supporting portions 332 on each connecting portion 32. Therefore, the supporting frame 30 can load five substrates at a time, and only two substrates are illustrated in the figure. After several substrates are placed on the supporting portion 332, the first vacuum valve 11 is closed, the chamber 10 is evacuated, and the pressure in the chamber 10 is consistent with the pressure in the transmission chamber. If the substrate on the supporting portion 332 needs to be heated, the lifting mechanism 40 lowers the support frame 30, and the substrate on the lowermost supporting portion 332 is lowered above the clamp base 21. In order to improve the process efficiency, the clamp base 21 has been Heating to a certain temperature, in order to make the substrate heat more uniformly, the substrate and the holder 21 are kept at a certain distance. If the substrate on the supporting portion 332 needs to be cooled, the lifting mechanism 40 lowers the support frame 30 so that the substrate on the lowermost supporting portion 332 is lowered and placed on the previously cooled clamp base 21. When the temperature of the substrate reaches a preset temperature After that, the lifting mechanism 40 raises the support frame 30, and the substrate that has been heated or cooled is still located on the lower-most supporting portion 332. The second vacuum valve 12 is opened, and the vacuum robot in the transfer chamber removes the heated or cooled substrate from the chamber 10. In the same manner, the substrates on the carrier 332 are heated or cooled one by one and removed from the chamber 10 by a vacuum robot. In the above process, the support frame 30 can be kept stationary, and the chuck 20 can be raised or lowered by the motor 50, or the support frame 30 and the chuck 20 can be kept in relative motion at the same time.

請參閱圖7,當載鎖腔100作為卸載腔使用時,第一真空閥門11和第二真空閥門12都關閉。腔室10被抽真空,腔室10內的壓強與傳輸腔內的壓強一致。打開第二真空閥門12,真空機械手將一片基板放置在頂層的承載部332上。如果承載部332上的基板需要冷卻,升降機構40降低支撐架30,位於頂層的承載部332上的基板被放到已預先冷卻的夾座21上進行冷卻。如果承載部332上的基板需要加熱,位於頂層的承載部332上的基板被降低至夾座21的上方,此時的夾座21已預加熱至一定溫度,為了使基板加熱的更均勻,基板與夾座21保持一定距離。當基板的溫度達到預設的溫度後,升降機構40升高支撐架30,已被冷卻或加熱的基板仍位於頂層的承載部332上。真空機械手將另一片基板放置在第二層的承載部332上並以相同的方式對該層的承載部332上的基板冷卻或加熱,這裏所述的第二層緊鄰頂層,採用相同的方式,直到所有層的承載部332都放置有基板且基板被冷卻或加熱。關閉第二真空閥門12,向腔室10內注入氮氣或其他惰性氣體, 直到腔室10內的壓強與外界大氣壓一致。打開第一真空閥門11,大氣機械手將承載部332上所有基板全部取走。在上述過程中,可以使支撐架30保持不動,而透過馬達50升高或降低夾盤20,或者同時使支撐架30和夾盤20保持相對運動。 Referring to FIG. 7, when the load-lock chamber 100 is used as an unloading chamber, both the first vacuum valve 11 and the second vacuum valve 12 are closed. The chamber 10 is evacuated, and the pressure in the chamber 10 is consistent with the pressure in the transmission chamber. The second vacuum valve 12 is opened, and a vacuum manipulator places a piece of substrate on the supporting portion 332 on the top layer. If the substrate on the supporting portion 332 needs to be cooled, the lifting mechanism 40 lowers the support frame 30, and the substrate on the supporting portion 332 on the top layer is placed on the pre-cooled clamp base 21 for cooling. If the substrate on the carrier portion 332 needs to be heated, the substrate on the top portion of the carrier portion 332 is lowered above the holder 21, and the holder 21 at this time has been pre-heated to a certain temperature. In order to make the substrate heating more uniform, the substrate Keep a certain distance from the clamp base 21. When the temperature of the substrate reaches a preset temperature, the lifting mechanism 40 raises the support frame 30, and the substrate that has been cooled or heated is still located on the supporting portion 332 on the top layer. The vacuum manipulator places another substrate on the supporting portion 332 of the second layer and cools or heats the substrate on the supporting portion 332 of the layer in the same way. The second layer described here is close to the top layer and uses the same method. Until the substrates 332 of all layers are placed with substrates and the substrates are cooled or heated. Close the second vacuum valve 12 and inject nitrogen or other inert gas into the chamber 10, Until the pressure in the chamber 10 is consistent with the external atmospheric pressure. The first vacuum valve 11 is opened, and all the substrates on the carrier 332 are removed by the atmospheric robot. In the above process, the support frame 30 can be kept stationary, and the chuck 20 can be raised or lowered by the motor 50, or the support frame 30 and the chuck 20 can be kept in relative motion at the same time.

使用本發明載鎖腔100處理基板的方法包括如下步驟:步驟11:向腔室10內注入氮氣或其他惰性氣體以調節腔室10內的壓強,直至腔室10內的壓強與外界大氣壓一致;步驟12:打開第一真空閥門11,並將數片基板分別放置在每一層的承載部332上;步驟13:關閉第一真空閥門11,並對腔體10抽真空,使腔體10內的壓強與傳輸腔內的壓強一致;步驟14:降低支撐架30和/或升高夾盤20,使最下層的承載部332上的基板位於夾座21的上方並與夾座21保持一定距離或者使最下層的承載部332上的基板放在夾座21上進行處理;步驟15:升高支撐架30和/或降低夾盤20,已被處理的基板由最下層的承載部332托住;步驟16:打開第二真空閥門12,將位於最下層的承載部332上的基板從腔室10中取走;步驟17:重復步驟14-16,直到各層的承載部332上的基板被處理並從腔室10中取走。 The method for processing a substrate using the load-locking chamber 100 of the present invention includes the following steps: Step 11: Inject nitrogen or other inert gas into the chamber 10 to adjust the pressure in the chamber 10 until the pressure in the chamber 10 is consistent with the external atmospheric pressure; Step 12: Open the first vacuum valve 11 and place a plurality of substrates on the bearing portions 332 of each layer respectively; Step 13: Close the first vacuum valve 11 and evacuate the cavity 10 so that the inside of the cavity 10 The pressure is consistent with the pressure in the transfer chamber; Step 14: Lower the support frame 30 and / or raise the chuck 20 so that the substrate on the lowest-level load bearing portion 332 is located above the clamp base 21 and maintains a certain distance from the clamp base 21 or The substrate on the lowermost carrier portion 332 is placed on the holder 21 for processing; step 15: raising the support frame 30 and / or lowering the chuck 20, the processed substrate is held by the lowermost carrier portion 332; Step 16: Open the second vacuum valve 12 and remove the substrate on the lower-most carrier portion 332 from the chamber 10. Step 17: Repeat steps 14-16 until the substrate on the carrier portion 332 of each layer is processed and Remove from the chamber 10.

使用本發明載鎖腔100處理基板的另一方法包括如下步驟:步驟21:對腔體10抽真空,使腔體10內的壓強與傳輸腔內的壓強一致;步驟22:打開第二真空閥門12,並將一片基板放置在頂層的承載部332上;步驟23:降低支撐架30和/或升高夾盤20,使放置在頂層的承載部332上的基板放在夾座21上或者位於夾座21的上方並與夾座21保持一定距離進行處理;步驟24:升高支撐架30和/或降低夾盤20,已被處理的基板由頂層的承載部332托住;步驟25:重復步驟22-24,直到各層的承載部332上都放置有基板且基板被處理;步驟26:關閉第二真空閥門12,並向腔室10內注入氮氣或其他惰性氣體,使腔體10中的壓強與外界大氣壓一致;步驟27:打開第一真空閥門11,將承載部332上所有基板從腔室10中取走。 Another method for processing the substrate using the load-locking cavity 100 of the present invention includes the following steps: Step 21: Vacuum the cavity 10 so that the pressure in the cavity 10 is consistent with the pressure in the transmission cavity; Step 22: Open the second vacuum valve 12, and place a substrate on the top-level supporting portion 332; step 23: lower the support frame 30 and / or raise the chuck 20, so that the substrate placed on the top-level supporting portion 332 is placed on the clamping base 21 or located Step 24: Raise the support frame 30 and / or lower the chuck 20, and the processed substrate is supported by the top portion 332; Step 25: Repeat Steps 22-24, until the substrates are placed on the carrier 332 of each layer and the substrates are processed; Step 26: Close the second vacuum valve 12 and inject nitrogen or other inert gas into the chamber 10, so that the The pressure is consistent with the external atmospheric pressure; step 27: the first vacuum valve 11 is opened, and all the substrates on the bearing portion 332 are removed from the chamber 10.

由上述可知,本發明載鎖腔100結構簡單並能夠加熱或冷卻多片基板,同時,載鎖腔100只需要注入一次氮氣或其他惰性氣體和抽一次真空,因此能夠大大提高工藝效率。 It can be known from the above that the load lock cavity 100 of the present invention has a simple structure and can heat or cool multiple substrates. At the same time, the load lock cavity 100 only needs to inject nitrogen or other inert gas and evacuate once, so the process efficiency can be greatly improved.

綜上所述,本發明載鎖腔及使用該載鎖腔處理基板的方法透過上述實施方式及相關圖式說明,己具體、 詳實的揭露了相關技術,使本領域的技術人員可以據以實施。而以上所述實施例只是用來說明本發明,而不是用來限制本發明的,本發明的權利範圍,應由本發明的申請專利範圍來界定。至於本文中所述元件數目的改變或等效元件的代替等仍都應屬於本發明的權利範圍。 To sum up, the load-locking cavity of the present invention and the method for processing a substrate using the load-locking cavity of the present invention are described through the foregoing embodiments and related drawings. The related technology is disclosed in detail, so that those skilled in the art can implement it accordingly. The above-mentioned embodiments are only used to illustrate the present invention, but not intended to limit the present invention. The scope of rights of the present invention should be defined by the scope of patent application of the present invention. As for the changes in the number of elements described herein or the replacement of equivalent elements, they should still belong to the right scope of the present invention.

Claims (12)

一種可以處理多片基板的載鎖腔,其特徵在於,包括:腔室,所述腔室具有第一真空閥門和第二真空閥門;夾盤,所述夾盤具有收容於所述腔室的夾座,所述夾座適於放置基板,所述夾座的外邊緣設有至少兩個凹槽;支撐架,所述支撐架收容於所述腔室並位於所述夾座的上方,所述支撐架具有呈圓環狀的基體,至少兩個連接部自所述基體向下延伸,每個連接部向所述支撐架的軸心方向水平凸伸出數個在垂直方向層疊的支撐台,每一支撐台具有一承載部,各連接部上同一層的承載部與所述夾座平行並能托住一片基板;以及至少一升降機構,與所述基體相連,所述升降機構用於升高或降低所述支撐架的所述基體及所述連接部,使得每一層支撐台的承載部能移動到使得所述承載部上的基板被所述夾座處理的高度;其中當數個所述承載部中的一個或多個承載部經過所述夾座時,所述一個或多個承載部位於所述夾座的凹槽內。A load-locking chamber capable of processing multiple substrates, comprising: a chamber having a first vacuum valve and a second vacuum valve; a chuck, the chuck having a A clamp seat adapted to place a substrate, the outer edge of the clamp seat being provided with at least two grooves; a support frame, the support frame being received in the chamber and located above the clamp seat, The support frame has a circular base body, at least two connecting portions extend downward from the base body, and each connecting portion projects horizontally and protrudes from a plurality of support tables stacked in the vertical direction to the axis direction of the support frame. Each supporting platform has a bearing portion, and the bearing portion of the same layer on each connecting portion is parallel to the clamp seat and can support a substrate; and at least one lifting mechanism is connected to the base body, and the lifting mechanism is used for Raising or lowering the base body and the connecting portion of the support frame, so that the supporting portion of each layer of the supporting table can be moved to a height such that the substrate on the supporting portion is processed by the clamp seat; One or more bearing parts in the bearing part Past the clip mount portion, said one or more bearing portions positioned within the recess of the clamp holder. 根據請求項1所述的載鎖腔,其中所述夾盤還進一步包括支桿,所述支桿的一端與所述夾座的中部連接,所述支桿的另一端穿出所述腔室,一馬達配置在所述支桿的另一端,用於升高或降低所述夾盤。The load-locking cavity according to claim 1, wherein the chuck further includes a support rod, one end of the support rod is connected to a middle portion of the clamp seat, and the other end of the support rod passes out of the chamber. A motor is arranged at the other end of the support rod for raising or lowering the chuck. 根據請求項1所述的載鎖腔,其中每一支撐台還進一步包括與所述連接部垂直相連的基部,所述基部向下傾斜形成一引導部後再向所述支撐架的軸心方向水平延伸形成所述承載部。The load-locking cavity according to claim 1, wherein each support platform further includes a base portion vertically connected to the connecting portion, and the base portion is inclined downward to form a guide portion and then toward the axis of the support frame. Horizontally extending to form the bearing portion. 根據請求項3所述的載鎖腔,其中每一支撐台還進一步包括一限位部,所述限位部的頂端連接所述引導部,所述限位部的底端連接所述承載部。The load-locking cavity according to claim 3, wherein each supporting table further includes a limiting portion, a top end of the limiting portion is connected to the guide portion, and a bottom end of the limiting portion is connected to the bearing portion . 根據請求項1所述的載鎖腔,其中所述支撐架還進一步包括一基體,所述連接部分別與所述基體相連接。The load-locking cavity according to claim 1, wherein the support frame further includes a base, and the connecting portions are respectively connected to the base. 根據請求項5所述的載鎖腔,其中所述升降機構設置在所述腔室的外部,並且與所述基體相連接。The load-locking cavity according to claim 5, wherein the lifting mechanism is provided outside the cavity and is connected to the base. 根據請求項1所述的載鎖腔,進一步包括至少又一升降機構,所述至少又一升降機構分別與所述連接部相連接,用於同時升高或降低所述連接部。The load-locking cavity according to claim 1, further comprising at least another lifting mechanism, which is respectively connected to the connecting portion for simultaneously raising or lowering the connecting portion. 根據請求項1所述的載鎖腔,進一步包括設置於所述夾盤內的加熱裝置。The load lock cavity according to claim 1, further comprising a heating device provided in the chuck. 根據請求項1所述的載鎖腔,進一步包括設置於所述夾盤內的冷卻裝置。The load lock cavity according to claim 1, further comprising a cooling device provided in the chuck. 根據請求項8或9所述的載鎖腔,進一步包括設置於所述夾盤內的溫度感測器。The load lock cavity according to claim 8 or 9, further comprising a temperature sensor provided in the chuck. 一種使用請求項1所述的載鎖腔處理基板的方法,包括:a)向所述腔室內注入惰性氣體直至所述腔室內的壓強與外界大氣壓一致;b)打開所述第一真空閥門,並將數片基板放置在所述數個承載部上;c)關閉所述第一真空閥門,並將所述腔室抽真空;d)透過所述支撐架之圓環狀的所述基體同時降低所述數個連接部上的所述數個承載部,使最下層的基板位於所述夾座的上方並與所述夾座保持一定距離或者使最下層的基板放在所述夾座上進行處理,其中兩相鄰承載部之間的距離在步驟(b)與步驟(d)相同;e)升高所述支撐架,已被處理的基板由所述承載部托住;f)打開所述第二真空閥門,並將已被處理的基板從所述腔室中取走;g)重復上述步驟d)~f)直到所述承載部上的基板都被處理並從所述腔室中取走。A method for processing a substrate using a load-locked cavity according to claim 1, comprising: a) injecting an inert gas into the chamber until the pressure in the chamber is consistent with the external atmospheric pressure; b) opening the first vacuum valve, And placing a plurality of substrates on the plurality of bearing portions; c) closing the first vacuum valve and evacuating the chamber; d) passing through the annular base of the support frame at the same time Lowering the plurality of load-bearing portions on the plurality of connecting portions, so that the lowermost substrate is located above the clamp base and kept a certain distance from the clamp base, or the lowermost substrate is placed on the clamp base Processing, wherein the distance between two adjacent load-bearing sections is the same in step (b) as step (d); e) raising the support frame, and the processed substrate is supported by the load-bearing section; f) opening The second vacuum valve, and removing the processed substrate from the chamber; g) repeating the above steps d) to f) until the substrates on the carrier are processed and removed from the chamber; Take away. 一種使用請求項1所述的載鎖腔處理基板的方法,包括:a)將所述腔室抽真空;b)打開所述第二真空閥門,並將一片基板放置在頂層的所述承載部上;c)透過所述支撐架之圓環狀的所述基體同時降低所述數個連接部上的所述數個承載部,使頂層的所述承載部上的基板放在所述夾座上進行處理或者位於所述夾座的上方並與所述夾座保持一定距離,其中兩相鄰承載部之間的距離在步驟(b)與步驟(c)相同;d)升高所述支撐架,已被處理的基板由頂層的所述承載部托住;e)重復上述步驟b)~d)直到所有層的所述承載部都有托住已被處理的基板;f)關閉所述第二真空閥門,並向所述腔室內注入惰性氣體直至腔室內的壓強與外界大氣壓一致;g)打開所述第一真空閥門,並將已被處理的基板從所述腔室中取走。A method for processing a substrate using a load-locking cavity according to claim 1, comprising: a) evacuating the chamber; b) opening the second vacuum valve, and placing a piece of substrate on the carrier portion of the top layer Upper; c) lowering the plurality of bearing portions on the plurality of connecting portions through the annular base of the support frame at the same time, so that the substrate on the bearing portion of the top layer is placed on the clamp seat It is processed above or is located above the clamp base and maintains a certain distance from the clamp base, wherein the distance between two adjacent bearing parts is the same in step (b) and step (c); d) raising the support Frame, the processed substrate is supported by the supporting portion of the top layer; e) repeat the above steps b) to d) until the supporting portions of all layers support the processed substrate; f) close the A second vacuum valve, and injecting an inert gas into the chamber until the pressure in the chamber is consistent with the external atmospheric pressure; g) opening the first vacuum valve and removing the processed substrate from the chamber.
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