TWI663064B - A wafer dicing protective film structure and method for manufacturing thereof and dicing wafer by using thereof - Google Patents
A wafer dicing protective film structure and method for manufacturing thereof and dicing wafer by using thereof Download PDFInfo
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Abstract
本發明提供一種晶圓切割保護膜結構其依序包含一離形層、一熱傳導組成物層、一人工石墨片層、一壓感黏著層及一切割層；其中，該熱傳導組成物層及人工石墨片層，可提供良好的導熱性、EMI遮蔽性及彎折性，有效提升半導體裝置之均熱性及散熱性。 The invention provides a wafer cutting protective film structure, which comprises a release layer, a heat conductive composition layer, an artificial graphite sheet layer, a pressure-sensitive adhesive layer, and a cutting layer in this order; wherein the heat conductive composition layer and artificial The graphite sheet layer can provide good thermal conductivity, EMI shielding and bending properties, and effectively improve the uniformity and heat dissipation of semiconductor devices.
Description
本發明係關於一種保護膜結構，特別係一種晶圓切割保護膜結構。 The invention relates to a protective film structure, in particular to a wafer cutting protective film structure.
半導體晶圓封裝後，可使用於各種電子產品中，而由於電子產品(如智慧型手機或平板點腦等)日趨輕薄化的需求，如何能使半導體裝置能更加輕薄一直都是產業的開發目標。此外，電子產品如何能有效地散熱，維持使用時的效能亦為重要的開發，3C產品常常會有過熱造成機體當機，影響使用的情況。 After the semiconductor wafer is packaged, it can be used in various electronic products. Due to the increasing demand for thinner and thinner electronic products (such as smart phones or tablet computers), how to make semiconductor devices thinner and thinner has always been an industry development goal. . In addition, how electronic products can effectively dissipate heat and maintain performance during use is also an important development. 3C products often have overheating which can cause the machine to crash and affect the use of the product.
半導體製程發展至今，在切晶及黏晶工序時，一般會先將晶圓黏附在黏晶切割膠膜上進行切割，當晶圓切割成晶粒要配置在電路板時，該黏晶切割膠膜之黏著劑層可移轉到晶粒上，使晶粒被拾取後能直接附著固定在電路板上完成黏晶。即，黏晶切割膠膜不同於早期晶圓黏結薄膜貼合製程工序，晶粒必須另使用黏著劑附著至電路板後，經熱固化才可黏著，即可免除晶粒在黏結薄膜貼合製程工序時，會有溢膠、晶粒傾斜及熱處理對晶圓的傷害之問題。 The semiconductor process has been developed so far. During the die-cutting and die-sticking processes, the wafer is generally adhered to the die-cutting adhesive film for cutting. When the wafer is cut into dies to be arranged on the circuit board, the die-cutting adhesive is used. The adhesive layer of the film can be transferred to the die, so that the die can be directly attached and fixed on the circuit board to complete the die bonding after being picked up. That is, the die-bonding cutting adhesive film is different from the early wafer bonding film bonding process. The die must be attached to the circuit board with an adhesive and then cured by heat curing, which can eliminate the die bonding process in the bonding film. During the process, there are problems that the overflow of the glue, the tilt of the crystal grains and the heat treatment damage the wafer.
本發明者發現黏晶切割膠膜常用的黏著劑層多為單層結構，其主要為包含丙烯酸聚合物、含有不飽和烴基之環氧樹脂及熱硬化劑的組成物，並視需要添加二氧化矽等填料，然而，此種組成物在黏晶後往往使半導體裝置熱傳導性低，散熱性不佳之情況，造成使用效能不佳，進而影響到使用的電子產品。 The present inventors found that the adhesive layer commonly used in sticky crystal cutting adhesive films is mostly a single-layer structure, which is mainly a composition containing an acrylic polymer, an epoxy resin containing an unsaturated hydrocarbon group, and a thermosetting agent, and adding dioxide as needed Fillers such as silicon, however, this type of composition often results in low thermal conductivity and poor heat dissipation of semiconductor devices after sticking to the crystal, resulting in poor use efficiency and further affecting the electronic products used.
是以，為提升半導體裝置之散熱性及使用效能，本發明欲提供一種多層結構之黏晶切割膠膜，其包含人工石墨層及熱傳導組成物層，可提供良好的導熱性、EMI遮蔽性及彎折性，有效提升半導體裝置之均熱性及散熱性，以提升使用之電子產品的效能。 Therefore, in order to improve the heat dissipation and use efficiency of semiconductor devices, the present invention intends to provide a multilayer structure of a sticky crystal cutting adhesive film, which includes an artificial graphite layer and a heat conductive composition layer, which can provide good thermal conductivity, EMI shielding, and Bendability effectively improves the uniformity and heat dissipation of the semiconductor device, so as to improve the performance of the used electronic products.
即，本發明提供一種晶圓切割保護膜結構，其依序包含一離形層、一熱傳導組成物層、一人工石墨片層、一壓感黏著層及一切割層。 That is, the present invention provides a wafer dicing protective film structure, which sequentially includes a release layer, a heat conductive composition layer, an artificial graphite sheet layer, a pressure-sensitive adhesive layer, and a dicing layer.
進一步地，該人工石墨片層之厚度為7~40μm。 Further, the thickness of the artificial graphite sheet layer is 7 to 40 μm.
進一步地，該人工石墨片層具有均勻分布的穿孔，該穿孔之孔徑大小為300~2500μm，孔間距為500~4500μm。 Further, the artificial graphite sheet layer has uniformly distributed perforations, the pore size of the perforations is 300-2500 μm, and the hole spacing is 500- 4500 μm.
進一步地，該熱傳導組成物層包含環氧樹脂50~60wt%、填料30~50wt及固化劑1~10wt%。 Further, the heat-conducting composition layer includes 50-60 wt% epoxy resin, 30-50 wt% filler, and 1-10 wt% curing agent.
進一步地，該環氧樹脂係選自由雙酚A環氧樹脂、雙酚F環氧樹脂、雙酚S環氧樹脂、二羥基聯苯環氧樹脂、酚醛環氧樹脂、鄰甲酚醛環氧樹脂及其組合所組成之群組。 Further, the epoxy resin is selected from the group consisting of bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, dihydroxybiphenyl epoxy resin, phenolic epoxy resin, and o-cresol novolac epoxy resin. And their combinations.
進一步地，該填料係擇自由Al2O3、BN、AlN、石墨及其組合所組成之群組。 Further, the filler is selected from the group consisting of Al 2 O 3 , BN, AlN, graphite, and combinations thereof.
本發明另提供一種如上述之晶圓切割保護膜結構之製造方法，其步驟如下：(a)將熱傳導聚合組成物塗佈於一離形層，形成一熱傳導組成物層；(b)將具有人工石墨片層之壓感黏著層附著於該熱傳導組成物層，形成依序為該離形層、該熱傳導組成物層、該人工石墨片層及該壓感黏著層之結構，並進行層壓；(c)將步驟(b)層壓後之該結構以該壓感黏著層之面附著於一切割層後進行層壓，獲得該晶圓切割保護膜結構。 The present invention further provides a method for manufacturing a wafer dicing protective film structure as described above. The steps are as follows: (a) applying a thermally conductive polymeric composition to a release layer to form a thermally conductive composition layer; (b) having The pressure-sensitive adhesive layer of the artificial graphite sheet is attached to the heat-conducting composition layer to form a structure in which the release layer, the heat-conducting composition layer, the artificial graphite sheet, and the pressure-sensitive adhesive layer are sequentially formed, and laminated. (C) The structure laminated in step (b) is attached to a dicing layer with the surface of the pressure-sensitive adhesive layer and then laminated to obtain the wafer dicing protective film structure.
本發明另提供一種切割晶圓，其係將上述之晶圓切割保護膜結構的一離形膜移除後，附著至一晶圓，形成依序為一切割層、一壓感黏著層、一人工石墨片層、一熱傳導組成物層及該晶圓之結構。 The present invention further provides a dicing wafer, which is obtained by removing a release film of the above-mentioned wafer dicing protection film structure and attaching it to a wafer to form a cutting layer, a pressure-sensitive adhesive layer, and a Artificial graphite sheet layer, a heat conductive composition layer and the structure of the wafer.
1‧‧‧晶圓切割保護膜結構 1‧‧‧ Wafer dicing protective film structure
3‧‧‧離形層 3‧‧‧ release layer
5‧‧‧熱傳導組成物層 5‧‧‧ heat conductive composition layer
5’‧‧‧熱傳導組成物 5’‧‧‧ heat conductive composition
7‧‧‧人工石墨片層 7‧‧‧ Artificial graphite sheet
9‧‧‧壓感黏著層 9‧‧‧ pressure-sensitive adhesive layer
11‧‧‧切割層 11‧‧‧ cutting layer
13‧‧‧晶圓 13‧‧‧ wafer
圖1為本發明之晶圓切割保護膜結構。 FIG. 1 is a wafer dicing protective film structure of the present invention.
圖2為本發明之晶圓切割保護膜結構之製造方法。 FIG. 2 is a manufacturing method of a wafer dicing protective film structure of the present invention.
圖3為本發明之具有人工石墨片層之壓感黏著層：(a)俯視圖；(b)側視圖。 FIG. 3 is a pressure-sensitive adhesive layer having an artificial graphite sheet layer according to the present invention: (a) a plan view; (b) a side view.
圖4為本發明之切割晶圓。 FIG. 4 is a diced wafer of the present invention.
有關本發明之詳細說明及技術內容，現就配合圖式說明如下。再者，本發明中之圖式，為說明方便，其比例未必照實際比例繪製，該等圖式及其比例並非用以限制本發明之範圍，在此先行敘明。 The detailed description and technical contents of the present invention are described below with reference to the drawings. Furthermore, the drawings in the present invention are for convenience of explanation, and their proportions are not necessarily drawn according to actual proportions. These drawings and their proportions are not intended to limit the scope of the present invention, and will be described here in advance.
本發明提供一種晶圓切割保護膜結構，依序包含一離形層、一熱傳導組成物層、一人工石墨片層、一壓感黏著層及一切割層，其實例如圖1所示，該晶圓切割保護膜結構1依序包含離形層3、一熱傳導組成物層5、一人工石墨片層7、一壓感黏著層9及一切割層11。 The invention provides a wafer cutting protective film structure, which includes a release layer, a heat conductive composition layer, an artificial graphite sheet layer, a pressure-sensitive adhesive layer, and a dicing layer in order. In fact, as shown in FIG. 1, the crystal The circular cutting protective film structure 1 includes a release layer 3, a heat conductive composition layer 5, an artificial graphite sheet layer 7, a pressure-sensitive adhesive layer 9 and a cutting layer 11 in this order.
上述之離形層可由下列材料製成之薄膜組成，例如聚乙烯、聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、聚乙烯基氯、乙烯基氯共聚物、聚對苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯、聚對苯二甲酸丁二酸酯、聚胺基甲酸酯、乙烯-乙酸乙烯酯、離子交聯聚合物樹脂、乙烯/(甲烯)丙烯酸共聚物、乙烯/(甲烯)丙烯酸酯共聚物、聚苯乙烯、聚碳酸酯、醋酸纖維素、三醋酸纖維素、聚醯亞胺及含氟樹脂。離形層可具有表面張力40毫牛頓/米或以下，較好為37毫牛頓/米或以下，更佳為35毫牛頓/米或以下，厚度通常為5~300微米，較好為10~200微米，更佳為20~150微米。 The above-mentioned release layer may be composed of a film made of the following materials, such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, polyvinyl chloride, vinyl chloride copolymer, polyparaphenylene Diethylene glycol dicarboxylate, polyethylene naphthalate, polybutylene terephthalate, polyurethane, ethylene-vinyl acetate, ionomer resin, (Ene) acrylic copolymer, ethylene / (methene) acrylate copolymer, polystyrene, polycarbonate, cellulose acetate, cellulose triacetate, polyimide, and fluororesin. The release layer may have a surface tension of 40 millinewtons / m or less, preferably 37 millinewtons / m or less, more preferably 35 millinewtons / m or less, and the thickness is usually 5 to 300 microns, preferably 10 to 300 microns. 200 microns, more preferably 20 to 150 microns.
上述之熱傳導組成物層包含環氧樹脂50~60wt%、填料30~50wt及固化劑1~10wt%；該環氧樹脂可為50wt%、55wt%或60wt%；該填料可為30wt%、35wt%、40wt%、45wt%或50wt%；該固化劑可為1wt%、3wt%、5wt%、7wt%或10wt。 The above heat-conducting composition layer includes 50-60% by weight epoxy resin, 30-50% by weight filler, and 1-10% by weight curing agent; the epoxy resin may be 50% by weight, 55% by weight, or 60% by weight; the filler may be 30% by weight, 35% by weight %, 40 wt%, 45 wt%, or 50 wt%; the curing agent may be 1 wt%, 3 wt%, 5 wt%, 7 wt%, or 10 wt.
上述之環氧樹脂為一雙官能環氧樹脂或一多官能環氧樹脂，且係選自由雙酚A環氧樹脂、雙酚F環氧樹脂、雙酚S環氧樹脂、二羥基聯苯環氧樹脂、酚醛環氧樹脂、鄰甲酚醛環氧樹脂及其組合所組成之群組；其中，以雙酚A環氧樹脂為較佳。 The above epoxy resin is a bifunctional epoxy resin or a multifunctional epoxy resin, and is selected from the group consisting of bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, and dihydroxybiphenyl ring. Oxygen resin, phenolic epoxy resin, o-cresol novolac epoxy resin, and combinations thereof; among them, bisphenol A epoxy resin is preferred.
上述之填料係擇自由Al2O3、BN、AlN、石墨及其組合所組成之群組；其中，以Al2O3、BN或石墨為較佳。 The aforementioned fillers are selected from the group consisting of Al 2 O 3 , BN, AlN, graphite, and combinations thereof. Among them, Al 2 O 3 , BN, or graphite is preferred.
上述之熱傳導組成物層之厚度可為5~40μm，以7~35μm為較佳，例如5μm、7μm、10μm、15μm、20μm、25μm、30μm、35μm及40μm。 The thickness of the heat conductive composition layer may be 5 to 40 μm, and 7 to 35 μm is preferred, for example, 5 μm, 7 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, and 40 μm.
上述之人工石墨片層為的熱傳導效率為500~1800W/m‧k，密 度為0.8~2.5g/cm3，導電率為10000~20000S/cm，延伸強度為20~40Mpa，EMI遮蔽大於40dB及5GHz，材質較佳為使用聚醯亞胺薄膜碳化所得之人工石墨片層，但不限於此。且，人工石墨片層之厚度為7~40μm，例如7μm、10μm、15μm、20μm、25μm、30μm、35μm或40μm，具有均勻分布的穿孔，該穿孔之孔徑大小為300~2500μm，例如300μm、400μm、500μm、600μm、700μm、800μm、900μm、1000μm、1100μm、1200μm、1300μm、1400μm、1500μm、1600μm、1700μm、1800μm、1900μm、2000μm、2100μm、2200μm、2300μm、2400μm或2500μm；該穿孔間距為500~4500μm，例如500μm、800μm、1000μm、1300μm、1500μm、1700μm、2000μm、2300μm、2500μm、2800μm、3000μm、3300μm、3500μm、3800μm、4000μm、4300μm或4500μm。 The above-mentioned artificial graphite sheet has a thermal conductivity of 500 ~ 1800W / m‧k, a density of 0.8 ~ 2.5g / cm 3 , a conductivity of 10000 ~ 20,000S / cm, an extension strength of 20 ~ 40Mpa, and an EMI shielding greater than 40dB and 5 GHz, the material is preferably an artificial graphite sheet obtained by carbonizing a polyimide film, but it is not limited thereto. In addition, the thickness of the artificial graphite sheet layer is 7 to 40 μm, such as 7 μm, 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, or 40 μm, and has uniformly distributed perforations. The pore size of the perforations is 300 to 2500 μm, such as 300 μm, 400 μm. , 500 μm, 600 μm, 700 μm, 800 μm, 900 μm, 1000 μm, 1100 μm, 1200 μm, 1300 μm, 1400 μm, 1500 μm, 1600 μm, 1700 μm, 1800 μm, 1900 μm, 2000 μm, 2100 μm, 2200 μm, 2300 μm, 2400 μm, or 2500 μm; the perforation pitch is 500 to 500 For example, 500 μm, 800 μm, 1000 μm, 1300 μm, 1500 μm, 1700 μm, 2000 μm, 2300 μm, 2500 μm, 2800 μm, 3000 μm, 3300 μm, 3500 μm, 3800 μm, 4000 μm, 4300 μm, or 4500 μm.
上述之壓感黏著層可為通用壓感黏著劑所獲得，包含丙烯酸系共聚物黏著劑、矽酮類壓感黏著劑、橡膠類壓感黏著劑或其等之組合，且不限於此等。其中，該壓感黏著層較佳為使用丙烯酸系共聚物黏著劑，厚度為5~60μm，較佳為10~55μm，最佳為15~50μm。 The above pressure-sensitive adhesive layer can be obtained from general pressure-sensitive adhesives, and includes acrylic copolymer adhesives, silicone-based pressure-sensitive adhesives, rubber-based pressure-sensitive adhesives, or a combination thereof, and is not limited thereto. Among them, the pressure-sensitive adhesive layer preferably uses an acrylic copolymer adhesive, and has a thickness of 5 to 60 μm, preferably 10 to 55 μm, and most preferably 15 to 50 μm.
上述之切割膜可使通用的切割用基材膜，其實例包含聚乙烯、聚丙烯、聚丁烯、聚甲基戊烯等聚烯類、乙烯-醋酸乙烯酯共聚物、乙烯-丁烯共聚物、乙烯-己烯共聚物、聚氨酯、聚對苯二甲酸乙二醇酯等聚酯類、聚醯亞胺、聚醚醚酮、聚氯乙烯、聚偏二氯乙烯或其等組合所共聚而成之樹脂組成物，且不限於此等。該切割膜之厚度為10~200μm，例如10μm、20μm、30μm、40μm、50μm、60μm、70μm、80μm、90μm、100μm、110μm、120μm、130μm、140μm、150μm、160μm、170μm、180μm、 190μm及200μm。 The above-mentioned dicing film can be used for a general-purpose dicing substrate film, and examples thereof include polyenes such as polyethylene, polypropylene, polybutene, and polymethylpentene, ethylene-vinyl acetate copolymer, and ethylene-butene copolymerization. Polymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate and other polyesters, polyimide, polyetheretherketone, polyvinyl chloride, polyvinylidene chloride, or combinations thereof The resulting resin composition is not limited to these. The thickness of the dicing film is 10 to 200 μm, for example, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, 110 μm, 120 μm, 130 μm, 140 μm, 150 μm, 160 μm, 170 μm, 180 μm, 180 μm, 190 μm and 200 μm.
本發明之晶圓切割保護膜結構之製造方法，其步驟如下：(a)將熱傳導聚合組成物塗佈於一離形層，形成一熱傳導組成物層；(b)將具有人工石墨片層之壓感黏著層附著於該熱傳導組成物層，形成依序為該離形層、該熱傳導組成物層、該人工石墨片層及該壓感黏著層之結構，並進行層壓；(c)將步驟(b)層壓後之結構以該壓感黏著層之面附著於一切割層後進行層壓，獲得該晶圓切割保護膜結構。實例如圖2所示，將熱傳導組成物5’塗佈於一離形層3，形成一熱傳導組成物層5；將具有人工石墨片層7之壓感黏著層9附著於該熱傳導組成物層5，形成依序為該離形層3、該熱傳導組成物層5、該人工石墨片層7及該壓感黏著層9之結構，並進行層壓；最後，將該結構以該壓感黏著層9之面附著於一切割層11後進行層壓，獲得該晶圓切割保護膜結構。 The manufacturing method of the wafer dicing protective film structure of the present invention includes the following steps: (a) coating a thermally conductive polymeric composition on a release layer to form a thermally conductive composition layer; (b) applying an artificial graphite sheet layer The pressure-sensitive adhesive layer is attached to the heat-conductive composition layer to form a structure in which the release layer, the heat-conductive composition layer, the artificial graphite sheet layer, and the pressure-sensitive adhesive layer are sequentially formed, and laminated; (c) the In step (b), the laminated structure is adhered to a dicing layer with the surface of the pressure-sensitive adhesive layer and then laminated to obtain the wafer dicing protective film structure. An example is shown in FIG. 2, a heat conductive composition 5 ′ is coated on a release layer 3 to form a heat conductive composition layer 5; a pressure-sensitive adhesive layer 9 having an artificial graphite sheet layer 7 is attached to the heat conductive composition layer 5. Form a structure in which the release layer 3, the heat conductive composition layer 5, the artificial graphite sheet layer 7, and the pressure-sensitive adhesive layer 9 are sequentially formed, and laminate; finally, the structure is adhered with the pressure-sensitive adhesive layer. The surface of the layer 9 is attached to a dicing layer 11 and then laminated to obtain the wafer dicing protection film structure.
上述之具有人工石墨片層7之壓感黏著層9之實例如圖3(a)及(b)所示，人工石墨片層7具有晶圓形狀並附著於係壓感黏著層7之上。 An example of the pressure-sensitive adhesive layer 9 having the artificial graphite sheet layer 7 is shown in FIGS. 3 (a) and 3 (b). The artificial graphite sheet layer 7 has a wafer shape and is attached to the pressure-sensitive adhesive layer 7.
上述之步驟(a)中，該塗佈可為通用之塗佈方法，包含旋轉塗佈、狹縫塗佈、流延塗佈、輥式塗佈、棒式塗佈或噴墨塗佈，且不限於此等。該熱傳導聚合組成物經塗佈在該離形層後，會置於100~150℃及1~20分鐘之條件下，部分熟化形成熱傳導組成物層，該部分熟化溫度例如100℃、110℃、120℃、130℃、140及150℃，其中120℃為較佳；部分熟化時間為1分鐘、5分鐘、10分鐘、15分鐘及20分鐘，其中以5分鐘為較佳。 In the above step (a), the coating may be a general coating method, including spin coating, slit coating, cast coating, roll coating, bar coating or inkjet coating, and Not limited to these. After the heat conductive polymer composition is coated on the release layer, it will be partially cured at 100 to 150 ° C and 1 to 20 minutes to form a heat conductive composition layer. The partial curing temperature is, for example, 100 ° C, 110 ° C, 120 ° C, 130 ° C, 140 and 150 ° C, of which 120 ° C is preferred; partial aging times are 1 minute, 5 minutes, 10 minutes, 15 minutes, and 20 minutes, with 5 minutes being preferred.
上述之步驟(b)及(c)中，該層壓可為通用之層壓方法，包含滾筒層壓或真空熱壓等，且不限於此等，其中以滾筒層壓較佳，層壓大小 為0.1MPa~1.5MPa，例如0.1MPa、0.3MPa、0.5MPa、1.0MPa或1.5MPa，其中以0.3MPa或0.5MPa為較佳。 In the above steps (b) and (c), the lamination may be a general lamination method, including roller lamination or vacuum hot pressing, etc., and is not limited to these. Among them, roller lamination is preferred, and the lamination size It is 0.1 MPa to 1.5 MPa, for example, 0.1 MPa, 0.3 MPa, 0.5 MPa, 1.0 MPa, or 1.5 MPa, and 0.3 MPa or 0.5 MPa is more preferable.
本發明之切割晶圓，如圖4所示，其係將本發明之晶圓切割保護膜結構1的離形膜3移除後，附著至一晶圓13，形成依序為一切割層11、一壓感黏著層9、一人工石墨片層7、一熱傳導組成物層5及該晶圓13之結構。 As shown in FIG. 4, the dicing wafer of the present invention is obtained by removing the release film 3 of the wafer dicing protective film structure 1 of the present invention and attaching it to a wafer 13 to form a dicing layer 11 in sequence. , A pressure-sensitive adhesive layer 9, an artificial graphite sheet layer 7, a heat conductive composition layer 5 and the structure of the wafer 13.
本發明之切割晶圓進行切割後，可使用黏晶機將切割的晶粒拾取，在此同時壓感黏著層會與切割層分離，拾取的晶粒則可利用壓感黏著層的黏著性固定於電路上，即完成黏晶程序。 After the dicing wafer of the present invention is cut, a die bonder can be used to pick up the cut crystal grains. At the same time, the pressure-sensitive adhesive layer is separated from the cutting layer, and the picked-up crystal grains can be fixed by the adhesiveness of the pressure-sensitive adhesive layer. On the circuit, the die attach process is completed.
[具體實施例][Specific embodiment]
在下文中，將利用具體實施例特別描寫本發明所揭示之內容。然而，本發明所揭示之內容不限制於下列範例。 In the following, specific embodiments will be used to describe the content disclosed by the present invention. However, what is disclosed in the present invention is not limited to the following examples.
實施例1.晶圓切割保護膜結構(1)Example 1. Wafer dicing protective film structure (1)
配製熱傳導聚合組成物：將100g雙酚A環氧樹脂(南亞塑膠)、60g Al2O3(日本Denka)、10g BN(日本Denka)及5g石墨(美國Graftech)及5g固化劑(日本Ajinomoto)於25℃混合均勻攪拌10分鐘後，將該熱傳導聚合組成物旋轉塗佈在離形層(南亞塑膠)上，於120℃下5分鐘部分熟化(B-stage)，獲得熱傳導組成物層及離形層。 Preparation of thermally conductive polymer composition: 100g of bisphenol A epoxy resin (Nanya Plastic), 60g of Al 2 O 3 (Denka of Japan), 10g of BN (Denka of Japan), 5g of graphite (Graftech in the United States) and 5g of curing agent (Ajinomoto in Japan) After mixing and stirring uniformly at 25 ° C for 10 minutes, the thermally conductive polymer composition was spin-coated on a release layer (Nanya Plastic), and partially cured (B-stage) at 120 ° C for 5 minutes to obtain a thermally conductive composition layer and an ionizer.形 层。 Shaped layer.
將具有人工石墨層之壓感塗佈層(人工石墨層的孔徑為500μm，孔間距為2000μm)固定於該熱傳導組成物層及離形層，形成為依序為離形層、熱傳導組成物層、人工石墨層及壓感塗佈層之結構，使用滾筒層壓以0.5MPa進行層壓。 A pressure-sensitive coating layer with an artificial graphite layer (the pore diameter of the artificial graphite layer is 500 μm and the hole spacing is 2000 μm) is fixed to the heat conductive composition layer and the release layer, and is formed into a release layer and a heat conductive composition layer in order. The structure of the artificial graphite layer and the pressure-sensitive coating layer is laminated using a roller lamination at 0.5 MPa.
隨後，再將切割膜(日立化成，SD3004)置於該多層結構 之壓感塗佈層上，使用滾筒層壓以0.3MPa進行層壓，獲得晶圓切割保護膜結構(1)。 Subsequently, a dicing film (Hitachi Kasei, SD3004) was placed on the multilayer structure. On the pressure-sensitive coating layer, lamination was performed at 0.3 MPa using roller lamination to obtain a wafer dicing protective film structure (1).
實施例2.晶圓切割保護膜結構(2)Example 2. Wafer dicing protective film structure (2)
使用同實施例1之步驟製備晶圓切割保護膜結構(2)，但其中具有人工石墨層之壓感塗佈層之人工石墨層的孔徑為1000μm，孔間距為2000μm。 The same steps as in Example 1 were used to prepare a wafer dicing protective film structure (2), but the pore diameter of the artificial graphite layer with the pressure-sensitive coating layer of the artificial graphite layer was 1000 μm, and the hole spacing was 2000 μm.
實施例3.晶圓切割保護膜結構(3)Example 3. Wafer dicing protective film structure (3)
使用同實施例1之步驟製備晶圓切割保護膜結構(3)，但其中具有人工石墨層之壓感塗佈層之人工石墨層的孔徑為2000μm，孔間距為4000μm。 The wafer cutting protective film structure (3) was prepared using the same procedure as in Example 1, but the pore diameter of the artificial graphite layer with the pressure-sensitive coating layer of the artificial graphite layer was 2000 μm, and the hole spacing was 4000 μm.
比較例1.不具有人工石墨層之晶圓切割保護膜結構Comparative Example 1. Wafer dicing protective film structure without artificial graphite layer
使用同實施例1之步驟製備比較例1晶圓切割保護膜結構，但使用之壓感塗佈層並不具有人工石墨層。 The same procedure as in Example 1 was used to prepare the wafer dicing protective film structure of Comparative Example 1, but the pressure-sensitive coating layer used did not have an artificial graphite layer.
比較例2.不具有熱傳導組成物層之晶圓切割保護膜結構Comparative Example 2. Wafer dicing protective film structure without heat conductive composition layer
使用具有離形層之丙烯酸系樹脂黏著劑層，以0.5MPa滾筒層壓於具有人工石墨層之壓感塗佈層(人工石墨層的孔徑為2000μm，孔間距為4000μm)，形成依序為離形層、丙烯酸系樹脂黏著劑層、人工石墨層及壓感塗佈層之結構。隨後，再將切割膜(SD3004，日立化成)置於該多層結構之壓感塗佈層上，使用滾筒層壓以0.5MPa進行層壓，獲得比較例2晶圓切割保護膜結構。 Using an acrylic resin adhesive layer with a release layer, a 0.5 MPa roller was laminated on a pressure-sensitive coating layer with an artificial graphite layer (the pore diameter of the artificial graphite layer was 2000 μm, and the hole spacing was 4000 μm). The structure of the shape layer, the acrylic resin adhesive layer, the artificial graphite layer, and the pressure-sensitive coating layer. Subsequently, a dicing film (SD3004, Hitachi Kasei) was placed on the pressure-sensitive coating layer of the multilayer structure, and laminated using a roll lamination at 0.5 MPa to obtain a wafer cutting protective film structure of Comparative Example 2.
測試例Test case
將實施例1至3及比較例1至2分別測試其熱傳導率、EMI遮蔽 率及延伸強度，其結果如表1所示。 Examples 1 to 3 and Comparative Examples 1 to 2 were respectively tested for thermal conductivity and EMI shielding The results are shown in Table 1 below.
由實施例1至3及比較例1測試結果顯示，實施例1至3具有人工石墨層於結構，比較例1不具有人工石墨層，因此實施例1至3的EMI遮蔽率比比較例1至3較高，熱傳導率也較低。由實施例2及比較例2測試結果顯示，實施例2具有熱傳導組成物層，比較例2不具有熱傳導組成物層，因此實施例2的熱傳導率比較例2較高。 The test results of Examples 1 to 3 and Comparative Example 1 show that Examples 1 to 3 have an artificial graphite layer in the structure, and Comparative Example 1 does not have an artificial graphite layer. Therefore, the EMI shielding ratios of Examples 1 to 3 are higher than those of Comparative Examples 1 to 3 is higher and thermal conductivity is lower. The test results of Example 2 and Comparative Example 2 show that Example 2 has a thermally conductive composition layer, and Comparative Example 2 does not have a thermally conductive composition layer. Therefore, the thermal conductivity of Example 2 is higher than that of Comparative Example 2.
是以，本發明之晶圓切割保護膜結構具有較佳之熱傳導率及EMI遮蔽率，利於提升半導體裝置之均熱性及散熱性，以提升使用之電子產品的效能。 Therefore, the wafer dicing protective film structure of the present invention has better thermal conductivity and EMI shielding rate, which is beneficial to improving the uniformity and heat dissipation of the semiconductor device and improving the efficiency of the used electronic products.
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