TWI659816B - Wafer generation method - Google Patents

Wafer generation method Download PDF

Info

Publication number: TWI659816B
Authority: TW; Taiwan
Prior art keywords: wafer; starting point; ingot; separation starting; laser beam
Prior art date: 2014-12-04

Application number

TW104136023A

Other languages

English (en)

Chinese (zh)

Other versions

TW201625393A (zh

Inventor

平田和也

高橋邦充

西野曜子

Original Assignee

日商迪思科股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-12-04

Filing date

2015-11-02

Publication date

2019-05-21

2015-11-02 Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司

2016-07-16 Publication of TW201625393A publication Critical patent/TW201625393A/zh

2019-05-21 Application granted granted Critical

2019-05-21 Publication of TWI659816B publication Critical patent/TWI659816B/zh

Links

238000000034 method Methods 0.000 title claims abstract description 29
239000013078 crystal Substances 0.000 claims abstract description 92
238000000926 separation method Methods 0.000 claims abstract description 66
238000002407 reforming Methods 0.000 claims abstract description 15
230000015572 biosynthetic process Effects 0.000 abstract description 8
230000000149 penetrating effect Effects 0.000 abstract description 3
230000004048 modification Effects 0.000 abstract description 2
238000012986 modification Methods 0.000 abstract description 2
235000012431 wafers Nutrition 0.000 description 55
239000010410 layer Substances 0.000 description 48
230000007246 mechanism Effects 0.000 description 15
238000003825 pressing Methods 0.000 description 10
230000001902 propagating effect Effects 0.000 description 5
230000001678 irradiating effect Effects 0.000 description 3
239000002346 layers by function Substances 0.000 description 3
229910000831 Steel Inorganic materials 0.000 description 2
238000010586 diagram Methods 0.000 description 2
238000003754 machining Methods 0.000 description 2
239000011295 pitch Substances 0.000 description 2
230000008569 process Effects 0.000 description 2
238000003672 processing method Methods 0.000 description 2
239000010959 steel Substances 0.000 description 2
229910009372 YVO4 Inorganic materials 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
238000003384 imaging method Methods 0.000 description 1
230000006872 improvement Effects 0.000 description 1
230000002452 interceptive effect Effects 0.000 description 1
239000000203 mixture Substances 0.000 description 1
230000010355 oscillation Effects 0.000 description 1
230000000644 propagated effect Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
230000003068 static effect Effects 0.000 description 1

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Mechanical Engineering (AREA)
Plasma & Fusion (AREA)
Chemical & Material Sciences (AREA)
Oil, Petroleum & Natural Gas (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
General Physics & Mathematics (AREA)
Power Engineering (AREA)
Microelectronics & Electronic Packaging (AREA)
Computer Hardware Design (AREA)
Manufacturing & Machinery (AREA)
Condensed Matter Physics & Semiconductors (AREA)
Laser Beam Processing (AREA)
Mechanical Treatment Of Semiconductor (AREA)
High Energy & Nuclear Physics (AREA)
Processing Of Stones Or Stones Resemblance Materials (AREA)
Crystallography & Structural Chemistry (AREA)
Electromagnetism (AREA)
Health & Medical Sciences (AREA)
Toxicology (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

TW104136023A 2014-12-04 2015-11-02 Wafer generation method TWI659816B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2014246223A JP6399914B2 (ja)	2014-12-04	2014-12-04	ウエーハの生成方法
JP2014-246223		2014-12-04

Publications (2)

Publication Number	Publication Date
TW201625393A TW201625393A (zh)	2016-07-16
TWI659816B true TWI659816B (zh)	2019-05-21

Family

ID=55974403

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW104136023A TWI659816B (zh)	2014-12-04	2015-11-02	Wafer generation method

Country Status (7)

Country	Link
US (1)	US9764420B2 (ko)
JP (1)	JP6399914B2 (ko)
KR (1)	KR102341594B1 (ko)
CN (1)	CN105665947B (ko)
DE (1)	DE102015224320B4 (ko)
MY (1)	MY171644A (ko)
TW (1)	TWI659816B (ko)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP6395613B2 (ja) *	2015-01-06	2018-09-26	株式会社ディスコ	ウエーハの生成方法
JP6478821B2 (ja) *	2015-06-05	2019-03-06	株式会社ディスコ	ウエーハの生成方法
JP6698468B2 (ja) *	2016-08-10	2020-05-27	株式会社ディスコ	ウエーハ生成方法
JP6773506B2 (ja) *	2016-09-29	2020-10-21	株式会社ディスコ	ウエーハ生成方法
JP6831253B2 (ja) *	2017-01-27	2021-02-17	株式会社ディスコ	レーザー加工装置
DE112018003116T5 (de)	2017-06-19	2020-03-05	Rohm Co., Ltd.	Halbleiterbauelementherstellungsverfahren und struktur mit befestigtem wafer
JP6896344B2 (ja) *	2017-09-22	2021-06-30	株式会社ディスコ	チップの製造方法
US10896815B2 (en) *	2018-05-22	2021-01-19	Semiconductor Components Industries, Llc	Semiconductor substrate singulation systems and related methods
US11024501B2 (en)	2018-12-29	2021-06-01	Cree, Inc.	Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en)	2018-12-29	2020-02-18	Cree, Inc.	Laser-assisted method for parting crystalline material
US10576585B1 (en)	2018-12-29	2020-03-03	Cree, Inc.	Laser-assisted method for parting crystalline material
JP2020141009A (ja) *	2019-02-27	2020-09-03	パナソニックＩｐマネジメント株式会社	基板材料およびレーザ加工方法
US10611052B1 (en)	2019-05-17	2020-04-07	Cree, Inc.	Silicon carbide wafers with relaxed positive bow and related methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5581572A (en) *	1994-02-11	1996-12-03	France Telecom	Wavelength-tunable, distributed bragg reflector laser having selectively activated, virtual diffraction gratings
JP2000094221A (ja) *	1998-09-24	2000-04-04	Toyo Advanced Technologies Co Ltd	放電式ワイヤソー
CN102194931A (zh) *	2010-02-05	2011-09-21	株式会社迪思科	光器件晶片的加工方法
CN102773611A (zh) *	2011-05-12	2012-11-14	株式会社迪思科	晶片分割方法
JP2013049461A (ja) *	2011-08-31	2013-03-14	Fuji Seal International Inc	パウチ容器

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3998639B2 (ja)	2004-01-13	2007-10-31	株式会社東芝	半導体発光素子の製造方法
US20050217560A1 (en)	2004-03-31	2005-10-06	Tolchinsky Peter G	Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same
JP5155030B2 (ja) *	2008-06-13	2013-02-27	株式会社ディスコ	光デバイスウエーハの分割方法
JP5446325B2 (ja)	2009-03-03	2014-03-19	豊田合成株式会社	レーザ加工方法および化合物半導体発光素子の製造方法
CN101882578B (zh) *	2009-05-08	2014-03-12	东莞市中镓半导体科技有限公司	固体激光剥离和切割一体化设备
JP5558128B2 (ja) *	2010-02-05	2014-07-23	株式会社ディスコ	光デバイスウエーハの加工方法
WO2012108055A1 (ja) *	2011-02-10	2012-08-16	信越ポリマー株式会社	単結晶基板製造方法および内部改質層形成単結晶部材
JP5917862B2 (ja) *	2011-08-30	2016-05-18	浜松ホトニクス株式会社	加工対象物切断方法
CN102751398B (zh) *	2012-06-21	2014-12-10	华灿光电股份有限公司	一种倒三角形发光二极管芯片的制作方法
CN102896428A (zh) *	2012-08-01	2013-01-30	合肥彩虹蓝光科技有限公司	镭射隐形切割晶粒的方法
JP2014041925A (ja)	2012-08-22	2014-03-06	Hamamatsu Photonics Kk	加工対象物切断方法
JP6358941B2 (ja) *	2014-12-04	2018-07-18	株式会社ディスコ	ウエーハの生成方法
JP6395633B2 (ja) *	2015-02-09	2018-09-26	株式会社ディスコ	ウエーハの生成方法
JP6425606B2 (ja) *	2015-04-06	2018-11-21	株式会社ディスコ	ウエーハの生成方法
JP6482389B2 (ja) *	2015-06-02	2019-03-13	株式会社ディスコ	ウエーハの生成方法
JP6472333B2 (ja) *	2015-06-02	2019-02-20	株式会社ディスコ	ウエーハの生成方法
JP6482423B2 (ja) *	2015-07-16	2019-03-13	株式会社ディスコ	ウエーハの生成方法

2014
- 2014-12-04 JP JP2014246223A patent/JP6399914B2/ja active Active
2015
- 2015-11-02 TW TW104136023A patent/TWI659816B/zh active
- 2015-11-17 MY MYPI2015704157A patent/MY171644A/en unknown
- 2015-11-30 CN CN201510854469.6A patent/CN105665947B/zh active Active
- 2015-12-01 US US14/955,352 patent/US9764420B2/en active Active
- 2015-12-03 KR KR1020150171691A patent/KR102341594B1/ko active IP Right Grant
- 2015-12-04 DE DE102015224320.6A patent/DE102015224320B4/de active Active

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5581572A (en) *	1994-02-11	1996-12-03	France Telecom	Wavelength-tunable, distributed bragg reflector laser having selectively activated, virtual diffraction gratings
JP2000094221A (ja) *	1998-09-24	2000-04-04	Toyo Advanced Technologies Co Ltd	放電式ワイヤソー
CN102194931A (zh) *	2010-02-05	2011-09-21	株式会社迪思科	光器件晶片的加工方法
CN102773611A (zh) *	2011-05-12	2012-11-14	株式会社迪思科	晶片分割方法
JP2013049461A (ja) *	2011-08-31	2013-03-14	Fuji Seal International Inc	パウチ容器

Also Published As

Publication number	Publication date
CN105665947A (zh)	2016-06-15
TW201625393A (zh)	2016-07-16
US9764420B2 (en)	2017-09-19
KR102341594B1 (ko)	2021-12-22
JP2016111144A (ja)	2016-06-20
CN105665947B (zh)	2019-02-15
US20160158883A1 (en)	2016-06-09
KR20160067781A (ko)	2016-06-14
JP6399914B2 (ja)	2018-10-03
MY171644A (en)	2019-10-22
DE102015224320A1 (de)	2016-06-09
DE102015224320B4 (de)	2024-05-02

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