TWI656092B - 奈米碳管的表徵方法 - Google Patents
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Abstract
一種奈米碳管表徵方法,其包括以下步驟:提供一導電基底,該導電基底上設置一層絕緣層;在所述絕緣層上設置一奈米碳管結構;將奈米碳管結構放置在掃描電鏡下,調整掃描電鏡的加速電壓為5~20千伏,駐留時間為6~20微秒,放大倍數為1萬~10萬倍,採用掃描電鏡對所述奈米碳管結構拍攝照片;獲得奈米碳管結構的照片,奈米碳管結構中的奈米碳管分佈在照片襯底上。
Description
本發明涉及一種奈米碳管的表徵方法,尤其涉及一種採用掃描電鏡對奈米碳管進行表徵的方法。
單壁奈米碳管是一種非常具有研究潛能的奈米材料。基於其奈米級的尺寸以及特殊的結構,單壁奈米碳管具有良好的電學性能、光電性能以及半導體性能。單壁奈米碳管可以分為金屬型和半導體型兩種類型。由於這兩種奈米碳管的應用範圍不同,需要對其進行區分。隨著奈米碳管的應用越來越廣泛,如何區分金屬型奈米碳管和半導體型奈米碳管成為研究的熱點。
傳統的常用的區分金屬型奈米碳管和半導體型奈米碳管的方法為拉曼光譜法或者電學測量的方法。但是由於操作複雜導致效率較低。掃描電鏡因其具有較高的辨別效率,被越來越多的人用來表徵奈米碳管。請參見圖1及圖2,傳統的採用掃描電鏡區表徵奈米碳管的方法中,為了獲得清晰而且對比度高的照片,採用較低的(1千伏左右)的加速電壓。採用傳統表徵方法獲得的奈米碳管照片中,奈米碳管的導電性能與照片中的顏色有關,顏色越淺,導電性能越好,但是,奈米碳管的顏色都是比襯底的顏色淺。當照片中同時存在金屬型奈米碳管和半導體型奈米碳管時,對於處於中間色的奈米碳管,如灰色的奈米碳管,在判斷這些奈米碳管的種類時,常會發生錯誤。因此,傳統的掃描電鏡表徵奈米碳管的方法在辨識奈米碳管種類時,準確度不夠高,常常會出現誤判
或者難以判斷。而且,由於無論金屬型還是半導體型的奈米碳管,在照片中顯示的顏色均比襯底顏色淺,當照片中只存在一種類型的奈米碳管時,難以判斷照片中的奈米碳管是金屬型還是半導體型。
有鑑於此,確有必要提供一種奈米碳管表徵方法,該奈米碳管表徵方法可以克服以上缺點。
一種奈米碳管表徵方法,其包括以下步驟:提供一導電基底,該導電基底上設置一層絕緣層;在所述絕緣層上設置一奈米碳管結構;將奈米碳管結構放置在掃描電鏡下,調整掃描電鏡的加速電壓為5~20千伏,駐留時間為6~20微秒,放大倍數為1萬~10萬倍,採用掃描電鏡對所述奈米碳管結構拍攝照片;獲得奈米碳管結構的照片,奈米碳管結構中的奈米碳管分佈在照片襯底上。
相較於先前技術,本發明所提供的奈米碳管表徵方法中,掃描電鏡的加速電壓遠高於傳統的奈米碳管的表徵方法中掃描電鏡的加速電壓,因此獲得的奈米碳管結構的照片中,金屬型奈米碳管比襯底的顏色淺,半導體型的奈米碳管比襯底的顏色深,因此,可以方便的判斷出奈米碳管的種類。
圖1為先前技術中,採用掃描電鏡表徵奈米碳管獲得的照片。
圖2為圖1的示意圖。
圖3為本發明實施例提供的奈米碳管表徵方法的流程示意圖。
圖4為本發明實施例提供的奈米碳管的表徵方法所獲得的奈米碳管的照片。
圖5為圖4的示意圖。
以下將結合附圖對本發明的提供的奈米碳管的表徵方法進一步的詳細說明。
請參閱圖3,本發明第一實施例提供奈米碳管的表徵方法,其包括以下步驟:S1:提供一導電基底,該導電基底上設置一層絕緣層;S2:在所述絕緣層上設置一奈米碳管結構;S3:將奈米碳管結構放置在掃描電鏡下,調整掃描電鏡的加速電壓為5~20千伏,駐留時間為6~20微秒,放大倍數為1萬~10萬倍,採用掃描電鏡對所述奈米碳管結構拍攝照片;以及S4:獲得奈米碳管結構的照片,奈米碳管結構中的奈米碳管分佈在照片襯底上。
在步驟S1中,所述導電基底的材料不限,只要是導電材料即可,可以為金屬、導電有機物或摻雜的導電材料。本實施例中,選用摻雜的矽作為導電基底材料。所述絕緣層的材料為絕緣材料,可以為氧化物或者高分子材料。本實施例中,選用氧化矽材料。所述絕緣層的厚度為50-300奈米。
在步驟S2中,奈米碳管結構包括一根奈米碳管或者多根奈米碳管。奈米碳管可以平行於絕緣層的表面。當奈米碳管結構包括多根奈米碳管時,該多根奈米碳管可以包括金屬型奈米碳管和/或半導體型奈米碳管。本實施例中,奈米碳管結構包括多根金屬型奈米碳管和半導體型奈米碳管。
在步驟S3中,優選地,加速電壓為15-20千伏,駐留時間為10-20微秒。本實施例中,加速電壓為10千伏,駐留時間為20微秒,放大倍數為2萬倍。
在步驟S4中,獲得奈米碳管結構的照片如圖4所示,其示意圖如圖5所示。圖3中包括襯底以及形成在襯底上的奈米碳管的影像。從圖4/圖5可以看出,一部分奈米碳管的顏色比襯底的顏色淺,一部分奈米碳管的顏色比襯底的顏色深。比襯底顏色淺的奈米碳管為金屬型奈米碳管;比襯底顏色深的奈米碳管為半導體型奈米碳管。
對比先前技術中採用掃描電鏡表徵奈米碳管的方法所獲得的奈米碳管的照片(圖1)和採用本發明實施例奈米碳管的表徵方法所獲得的奈米碳管照片(圖4),可以得出以下區別:
第一,採用傳統表徵方法獲得的奈米碳管照片中,奈米碳管的導電性能與照片中的顏色有關,顏色越淺,導電性能越好,但是,奈米碳管的顏色都是比襯底的顏色淺。當照片中同時存在金屬型奈米碳管和半導體型奈米碳管時,對於處於中間色的奈米碳管,如灰色的奈米碳管,在判斷這些奈米碳管的種類時,常會發生錯誤。因此,傳統的掃描電鏡表徵奈米碳管的方法在辨識奈米碳管種類時,準確度不夠高,常常會出現誤判或者難以判斷。而採用本發明實施例所獲得的奈米碳管照片中,金屬型奈米碳管比襯底的顏色淺,半導體型的奈米碳管比襯底的顏色深,因此在判斷奈米碳管屬於金屬型還是半導體型時,便可以一目了然。
第二,採用傳統表徵方法獲得的奈米碳管照片中,由於無論金屬型還是半導體型的奈米碳管,在照片中顯示的顏色均比襯底顏色淺,當照片中只存在一種類型的奈米碳管時,難以判斷照片中的奈米碳管是金屬型還是半導體型。而採用本發明所提供的奈米碳管表徵方法所獲得的奈米碳管照片中,金屬
型奈米碳管比襯底的顏色淺,半導體型的奈米碳管比襯底的顏色深,即使照片中只存在一種類型的奈米碳管,也可以快速判斷其種類。
第三,相對於圖4,圖1的對比度更高,視覺上更容易觀察奈米碳管,而且照片比較美觀,而本發明實施例所獲得的照片圖3中,解析度相對較低,照片也不夠美觀,所以先前技術中均是採用低加速電壓對奈米碳管進行表徵。但是先前技術中奈米碳管的表徵方法所獲得的照片難以準確地判斷奈米碳管的種類。本發明提供的奈米碳管的表徵方法,能夠快速而準確的判斷奈米碳管的種類,克服了技術偏見。
第四,相對於圖1,圖4中奈米碳管成像的寬度較小,因此,對於密度較高的多個奈米碳管,本發明所提供的奈米碳管的表徵方法更加適合。
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。
Claims (9)
- 一種奈米碳管的表徵方法,其包括以下步驟:提供一導電基底,該導電基底上設置一層絕緣層;在所述絕緣層上設置一奈米碳管結構;將奈米碳管結構放置在掃描電鏡下,調整掃描電鏡的加速電壓為5-20千伏,駐留時間為6-20微秒,放大倍數為1萬-10萬倍,採用掃描電鏡對所述奈米碳管結構拍攝照片,使金屬型奈米碳管的顏色比照片襯底的顏色淺,半導體型奈米碳管的顏色比照片襯底的顏色深;以及獲得奈米碳管結構的照片,奈米碳管結構中的奈米碳管分佈在照片襯底上。
- 如請求項第1項所述之奈米碳管的表徵方法,其中,所述導電基底的材料為金屬、導電有機物或摻雜的導電材料。
- 如請求項第1項所述之奈米碳管的表徵方法,其中,所述絕緣層的材料為氧化物或者高分子材料。
- 如請求項第1項所述之奈米碳管的表徵方法,其中,所述絕緣層的厚度為50-300奈米。
- 如請求項第1項所述之奈米碳管的表徵方法,其中,所述奈米碳管結構包括一根或多根奈米碳管。
- 如請求項第1項所述之奈米碳管的表徵方法,其中,所述奈米碳管結構包括多根奈米碳管,該多根奈米碳管包括金屬型奈米碳管和半導體型奈米碳管。
- 如請求項第6項所述之奈米碳管的表徵方法,其中,所述多根奈米碳管平行於絕緣層的表面。
- 如請求項第1項所述之奈米碳管的表徵方法,其中,所述掃描電鏡的加速電壓為15-20千伏。
- 如請求項第1項所述之奈米碳管的表徵方法,其中,所述駐留時間為10-20微秒。
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