TWI655786B - Optical device - Google Patents
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
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- H—ELECTRICITY
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
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Abstract
一種光學裝置，包括透明基板、第一遮光層、第二遮光層、多個感光元件以及反射層。第一遮光層位於透明基板的第一面上，且具有第一開口。第二遮光層位於透明基板的第二面上，且具有第二開口。至少部分感光元件位於第二遮光層上。至少一感光元件包括第一電極、感光層以及第二電極。第二遮光層位於第一電極與透明基板之間。感光層形成於第一電極上。第二電極形成於感光層上。第一電極、感光層以及第二電極不與第二開口重疊。反射層與透明基板相隔一間距。感光層位於反射層以及第二遮光層之間。An optical device includes a transparent substrate, a first light-shielding layer, a second light-shielding layer, a plurality of photosensitive elements, and a reflection layer. The first light-shielding layer is located on the first surface of the transparent substrate and has a first opening. The second light shielding layer is located on the second surface of the transparent substrate and has a second opening. At least a part of the photosensitive element is located on the second light-shielding layer. The at least one photosensitive element includes a first electrode, a photosensitive layer, and a second electrode. The second light-shielding layer is located between the first electrode and the transparent substrate. A photosensitive layer is formed on the first electrode. The second electrode is formed on the photosensitive layer. The first electrode, the photosensitive layer, and the second electrode do not overlap the second opening. The reflective layer is spaced apart from the transparent substrate. The photosensitive layer is located between the reflective layer and the second light-shielding layer.
Description
本發明是有關於一種光學裝置，且特別是有關於一種具有感光元件的光學裝置。The present invention relates to an optical device, and more particularly, to an optical device having a photosensitive element.
感光元件是一種被普遍應用的檢測裝置，感光元件將所接收到之光信號轉換成與對應的電信號。The photosensitive element is a commonly used detection device. The photosensitive element converts the received light signal into a corresponding electrical signal.
目前，市場的需求傾向於更多功能集成的電子設備，如將多種元器件集成在一起之電子設備。現有之具備顯示裝置的電子設備中，例如：手機、平板電腦、數位相機等，通常將感光元件設置於顯示面板的周邊區（或邊框區）中，增加了顯示面板中周邊區的大小。此外，在一些感光元件需要搭配針孔陣列的裝置中，一般是於基板上鑽孔以作為針孔使用，然而以鑽孔製程所製造出來的針孔往往過大，使整個裝置的厚度必須被放大才能使針孔與感光元件之間有足夠的像距，這導致了整個裝置的尺寸難以縮小。因此，目前急需一種能解決前述問題的方法。At present, market demand tends to more electronic devices with integrated functions, such as electronic devices that integrate multiple components together. In existing electronic devices equipped with a display device, such as mobile phones, tablet computers, and digital cameras, a photosensitive element is usually disposed in a peripheral area (or a border area) of a display panel, and the size of the peripheral area in the display panel is increased. In addition, in some devices that need to be equipped with a pinhole array for light-sensitive elements, holes are usually drilled on the substrate as pinholes. However, the pinholes produced by the drilling process are often too large, so that the thickness of the entire device must be enlarged. Only sufficient image distance can be achieved between the pinhole and the photosensitive element, which makes it difficult to reduce the size of the entire device. Therefore, there is an urgent need for a method that can solve the aforementioned problems.
本發明之至少一實施例提供一種光學裝置，能解決感光元件之尺寸難以縮小的問題。At least one embodiment of the present invention provides an optical device, which can solve the problem that it is difficult to reduce the size of a photosensitive element.
本發明之至少一實施例提供一種光學裝置，包括透明基板、第一遮光層、第二遮光層、多個感光元件以及反射層。第一遮光層位於透明基板的第一面上，且具有至少一第一開口。第二遮光層位於透明基板的第二面上，且具有至少一第二開口。感光元件至少部分位於第二遮光層上。至少一感光元件包括第一電極、感光層以及第二電極。第二遮光層位於第一電極與透明基板之間。感光層形成於第一電極上。第二電極形成於感光層上。在透明基板的法線方向上，第一電極、感光層以及第二電極不與第二開口重疊。反射層與透明基板相隔一間距。感光層位於反射層以及第二遮光層之間。At least one embodiment of the present invention provides an optical device including a transparent substrate, a first light-shielding layer, a second light-shielding layer, a plurality of photosensitive elements, and a reflection layer. The first light-shielding layer is located on the first surface of the transparent substrate and has at least one first opening. The second light-shielding layer is located on the second surface of the transparent substrate and has at least one second opening. The photosensitive element is at least partially located on the second light-shielding layer. The at least one photosensitive element includes a first electrode, a photosensitive layer, and a second electrode. The second light-shielding layer is located between the first electrode and the transparent substrate. A photosensitive layer is formed on the first electrode. The second electrode is formed on the photosensitive layer. In the normal direction of the transparent substrate, the first electrode, the photosensitive layer, and the second electrode do not overlap the second opening. The reflective layer is spaced apart from the transparent substrate. The photosensitive layer is located between the reflective layer and the second light-shielding layer.
本發明之目的之一為縮減光學裝置的尺寸。An object of the present invention is to reduce the size of an optical device.
本發明之目的之一為降低光學裝置的製造成本，並提升光學裝置的良率。One of the objectives of the present invention is to reduce the manufacturing cost of an optical device and improve the yield of the optical device.
為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.
圖1A是依照本發明的一實施例的一種光學裝置的上視示意圖。圖2是依照本發明的一實施例的一種光學裝置的剖面示意圖。圖2例如是沿圖1A剖線aa’的剖面示意圖。FIG. 1A is a schematic top view of an optical device according to an embodiment of the invention. FIG. 2 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. Fig. 2 is a schematic cross-sectional view taken along a line aa 'of Fig. 1A, for example.
請參考圖1A與圖2，光學裝置10包括透明基板100、第一遮光層110、第二遮光層120、多個感光元件T、反射層200以及多個發光元件E。1A and FIG. 2, the optical device 10 includes a transparent substrate 100, a first light-shielding layer 110, a second light-shielding layer 120, a plurality of photosensitive elements T, a reflection layer 200, and a plurality of light-emitting elements E.
透明基板100之材質可為玻璃、石英、有機聚合物、藍寶石水晶玻璃或是其他可適用的材料。透明基板100的厚度P例如為50微米至800微米。The material of the transparent substrate 100 may be glass, quartz, organic polymer, sapphire crystal glass, or other applicable materials. The thickness P of the transparent substrate 100 is, for example, 50 μm to 800 μm.
第一遮光層110位於透明基板100的第一面F1之上，且具有至少一個第一開口O1。第二遮光層120位於透明基板100的第二面F2之上，且具有至少一個第二開口O2。在一些實施例中，第一遮光層110的厚度例如為0.2微米至2微米，且第二遮光層120的厚度例如為0.2微米至2微米。在一些實施例中，第一開口O1的開口尺寸W1例如為25微米至100微米，且第二開口O2的開口尺寸W2例如為25微米至100微米。相鄰的第一開口O1之間的距離例如為第一開口O1之開口尺寸的十倍。第一遮光層110與第二遮光層120例如包括相同或不同的材料，在一些實施例中，一遮光層110與第二遮光層120的材料包括金屬、金屬化合物(例如鹵化銀)、樹脂或其他合適的材料。The first light-shielding layer 110 is located on the first surface F1 of the transparent substrate 100 and has at least one first opening O1. The second light shielding layer 120 is located on the second surface F2 of the transparent substrate 100 and has at least one second opening O2. In some embodiments, the thickness of the first light shielding layer 110 is, for example, 0.2 μm to 2 μm, and the thickness of the second light shielding layer 120 is, for example, 0.2 μm to 2 μm. In some embodiments, the opening size W1 of the first opening O1 is, for example, 25 μm to 100 μm, and the opening size W2 of the second opening O2 is, for example, 25 μm to 100 μm. The distance between adjacent first openings O1 is, for example, ten times the size of the openings of the first openings O1. The first light-shielding layer 110 and the second light-shielding layer 120 include, for example, the same or different materials. In some embodiments, the material of the light-shielding layer 110 and the second light-shielding layer 120 includes metal, metal compound (such as silver halide), resin, or Other suitable materials.
位於透明基板100上之第一遮光層110的第一開口O1與位於透明基板100上之第二遮光層120的第二開口O2互相配合能作為針孔使用，待測物X（例如手指指紋、掌紋、臉孔或其他物體）所反射的光線L（或發射出來的光線）可以通過第一開口O1與第二開口O2所組成的針孔。The first opening O1 of the first light-shielding layer 110 on the transparent substrate 100 and the second opening O2 of the second light-shielding layer 120 on the transparent substrate 100 can be used as pinholes. Light rays L (or emitted light) reflected by palm prints, faces or other objects can pass through a pinhole formed by the first opening O1 and the second opening O2.
在一些實施例中，第一遮光層110的第一開口O1與第二遮光層120的第二開口O2是藉由微影蝕刻製程所形成，因此，以第一開口O1與第二開口O2所組成之針孔的開口尺寸（例如等於第一開口O1的開口尺寸W1或第二開口O2的開口尺寸W2或兩者的平均）可以較小，具有成本低廉且良率高等優點。In some embodiments, the first opening O1 of the first light-shielding layer 110 and the second opening O2 of the second light-shielding layer 120 are formed by a lithographic etching process. The opening size of the pinhole (for example, the opening size W1 of the first opening O1 or the opening size W2 of the second opening O2 or the average of the two) can be smaller, which has the advantages of low cost and high yield.
在一些實施例中，第一開口O1的面積與第二開口O2的面積實質上相同。第一開口O1與第二開口O2具有較小的面積，因此光學裝置10不需要很大的像距就能夠有效的進行光感測，因此，可以減少光學裝置10的尺寸。In some embodiments, the area of the first opening O1 is substantially the same as the area of the second opening O2. The first opening O1 and the second opening O2 have smaller areas, so the optical device 10 can effectively perform light sensing without requiring a large image distance, and therefore, the size of the optical device 10 can be reduced.
在本實施例中，第一開口O1的開口輪廓與第二開口O2的開口輪廓為正方形，但不以此為限。在其他實施例中，第一開口O1的開口輪廓與第二開口O2的開口輪廓可以為圓形(如圖1B所示)、橢圓形、三邊形、矩形、五邊形、六邊形、七邊形、八邊形或其他幾何形狀。在一些實施例中，第一開口O1的開口輪廓與第二開口O2的開口輪廓實質上相同。In this embodiment, the opening contour of the first opening O1 and the opening contour of the second opening O2 are square, but not limited thereto. In other embodiments, the opening contour of the first opening O1 and the opening contour of the second opening O2 may be circular (as shown in FIG. 1B), oval, triangular, rectangular, pentagonal, hexagonal, Heptagon, octagon, or other geometric shapes. In some embodiments, the opening profile of the first opening O1 is substantially the same as the opening profile of the second opening O2.
在本實施例中，開口輪廓為正方形的第一開口O1與正方形的發光元件E以陣列式排列，但不以此為限。在其他實施例中，如圖1C所示，開口輪廓為正六邊形的第一開口O1可以搭配發光元件E以蜂窩形陣列排列。In this embodiment, the first opening O1 with a square opening profile and the square light-emitting elements E are arranged in an array, but not limited thereto. In other embodiments, as shown in FIG. 1C, the first openings O1 whose opening contours are regular hexagons may be arranged in a honeycomb array with the light-emitting elements E.
感光元件T位於第二遮光層110上，且感光元件T不與第二開口O2重疊。反射層200與透明基板100相隔一間距H。感光元件T位於反射層200以及第二遮光層120之間。The photosensitive element T is located on the second light-shielding layer 110, and the photosensitive element T does not overlap the second opening O2. The reflective layer 200 is separated from the transparent substrate 100 by a distance H. The photosensitive element T is located between the reflective layer 200 and the second light-shielding layer 120.
發光元件E例如包括有機發光二極體（Organic Light-Emitting Diode，OLED）或是微型發光二極體（Micro Light-Emitting Diode）。發光元件E位於該第一遮光層110上，且發光元件E不與第一開口O1重疊。在本實施例中，發光元件E包括多個可見光發光元件以及至少一紅外光發光元件I。可見光發光元件可以包括紅光發光元件、藍光發光元件以及綠光發光元件中的至少其中一種顏色的發光元件，例如可以包含多個紅光發光元件，或者例如可以包含多個紅光發光元件與多個綠光發光元件的組合。在本實施例中，發光元件E包括多個紅光發光元件R、多個藍光發光元件B、多個綠光發光元件G以及多個紅外光發光元件I，但本發明不以此為限。發光元件E還可以包括能發射出其他波長之光的發光元件。The light-emitting element E includes, for example, an organic light-emitting diode (OLED) or a micro-light-emitting diode (Micro Light-Emitting Diode). The light-emitting element E is located on the first light-shielding layer 110, and the light-emitting element E does not overlap the first opening O1. In this embodiment, the light emitting element E includes a plurality of visible light emitting elements and at least one infrared light emitting element I. The visible light emitting element may include at least one color of a red light emitting element, a blue light emitting element, and a green light emitting element. For example, the light emitting element may include a plurality of red light emitting elements, or may include a plurality of red light emitting elements and a plurality of light emitting elements. Of green light emitting elements. In this embodiment, the light emitting element E includes a plurality of red light emitting elements R, a plurality of blue light emitting elements B, a plurality of green light emitting elements G, and a plurality of infrared light emitting elements I, but the present invention is not limited thereto. The light emitting element E may further include a light emitting element capable of emitting light of other wavelengths.
在本實施例中，光學裝置10的每個重複單元PU包括一個紅光發光元件R、一個藍光發光元件B、一個綠光發光元件G以及一個紅外光發光元件I，其中紅光發光元件R、藍光發光元件B以及綠光發光元件G能發出可見光，直接影響光學裝置10所顯示出來之畫面的品質，紅外光發光元件I能發出紅外光，紅外光（例如是光線L）照到待測物X後反射回光學裝置10，並由光學裝置10的感光元件T蒐集反射回來的紅外光以偵測待測物X。In this embodiment, each repeating unit PU of the optical device 10 includes a red light emitting element R, a blue light emitting element B, a green light emitting element G, and an infrared light emitting element I. The red light emitting elements R, The blue light emitting element B and the green light emitting element G can emit visible light, which directly affects the quality of the screen displayed by the optical device 10. The infrared light emitting element I can emit infrared light, and the infrared light (for example, light L) shines on the object to be measured. X is reflected back to the optical device 10, and the infrared light reflected by the photosensitive element T of the optical device 10 is collected to detect the object X to be measured.
光線L通過第一開口O1與第二開口O2所組成的針孔並抵達反射層200，接著被反射層200反射至感光元件T。藉由感光元件T蒐集光線L以偵測待測物X。反射層200可以是塗佈在基板（未繪出）上的塗層，也可以是金屬基板或其他可以反射光線的基板。The light L passes through a pinhole formed by the first opening O1 and the second opening O2 and reaches the reflective layer 200, and is then reflected by the reflective layer 200 to the photosensitive element T. The light L is collected by the photosensitive element T to detect the object X to be measured. The reflective layer 200 may be a coating layer coated on a substrate (not shown), or may be a metal substrate or other substrates capable of reflecting light.
在本實施例中，感測區SR介於反射層200與第二遮光層120之間，反射層200的設置使光線L在感測區SR中的移動路徑增加，因此，反射層200與透明基板100之間的間距H不用很大，光線L在感測區SR中就能有足夠的移動距離（例如是針孔至感光元件T的像距），並可以進一步縮減光學裝置10的尺寸。In this embodiment, the sensing region SR is interposed between the reflective layer 200 and the second light-shielding layer 120. The arrangement of the reflective layer 200 increases the movement path of the light L in the sensing region SR. Therefore, the reflective layer 200 and the transparent layer 200 are transparent. The distance H between the substrates 100 need not be very large, and the light L can have a sufficient moving distance (for example, the image distance from the pinhole to the photosensitive element T) in the sensing area SR, and the size of the optical device 10 can be further reduced.
在一些實施例中，待測物X與透明基板100之間的間距H1大於反射層200與透明基板100之間的間距H，能獲得完整的還原影像。In some embodiments, the distance H1 between the test object X and the transparent substrate 100 is greater than the distance H between the reflective layer 200 and the transparent substrate 100, and a complete restored image can be obtained.
雖然在本實施例中，以感光元件T將紅外光轉換成電子訊號為例，但本發明不以此為限。在其他實施例中，感光元件T也可以將其他波長的光線轉換成電子訊號。雖然在本實施例中，感光元件T所偵測到之紅外光的光源為紅外光發光元件I，但本發明不以此為限。感光元件T也可以偵測環境光照到待測物X後反射的光線。Although in this embodiment, the photosensitive element T is used to convert infrared light into an electronic signal as an example, the present invention is not limited thereto. In other embodiments, the photosensitive element T can also convert light of other wavelengths into electronic signals. Although in this embodiment, the light source of the infrared light detected by the photosensitive element T is the infrared light emitting element I, the invention is not limited thereto. The light-receiving element T can also detect the light reflected by the ambient light after it reaches the object X to be measured.
在本實施例中，第一開口O1與第二開口O2例如是對應重複單元PU中紅外光發光元件I的位置設置，換句話說，設置了第一開口O1與第二開口O2只會減少紅外光發光元件I的數量而不會減少紅光發光元件R、藍光發光元件B以及綠光發光元件G的數量，因此能維持光學裝置10所顯示出來之畫面的品質。在本實施例中，紅外光發光元件I的數量少於紅光發光元件R的數量、藍光發光元件B的數量或綠光發光元件G的數量。換而言之，在一實施例中，該些紅外光發光元件和該至少一第一開口的數量總和等於該些紅光發光元件、該些藍光發光元件或該些綠光發光元件的數量。In this embodiment, for example, the first opening O1 and the second opening O2 are set corresponding to the positions of the infrared light emitting element I in the repeating unit PU. In other words, setting the first opening O1 and the second opening O2 will only reduce the infrared The number of the light-emitting elements I does not decrease the number of the red-light-emitting elements R, the blue-light-emitting elements B, and the green-light-emitting elements G, so the quality of the screen displayed by the optical device 10 can be maintained. In this embodiment, the number of infrared light emitting elements I is less than the number of red light emitting elements R, the number of blue light emitting elements B, or the number of green light emitting elements G. In other words, in an embodiment, the sum of the number of the infrared light emitting elements and the at least one first opening is equal to the number of the red light emitting elements, the blue light emitting elements, or the green light emitting elements.
在本實施例中，每個重複單元PU包括四個子畫素區，紅色子畫素區、藍色子畫素區綠色子畫素區以及紅外光子畫素區，分別對應紅光發光元件R、藍光發光元件B、綠光發光元件G以及紅外光發光元件I，且每個子畫素區的大小約等於四分之一個重複單元PU的面積。在一實施例中，第一開口O1的面積與第二開口O2的面積例如小於或等於一個子畫素區的面積。在一些實施例中，第一開口O1與第二開口O2的開口尺寸例如約為50微米，且可整合至254每英寸像素（Pixels Per Inch，ppi）的光學裝置中（例如為顯示裝置）。在一些實施例中。第一開口O1與第二開口O2的開口尺寸例如約為25微米，且可整合至508每英寸像素的光學裝置中（例如為顯示裝置）。In this embodiment, each repeating unit PU includes four sub-pixel regions, a red sub-pixel region, a blue sub-pixel region, a green sub-pixel region, and an infrared photon pixel region, respectively corresponding to the red light emitting elements R, The blue light emitting element B, the green light emitting element G, and the infrared light emitting element I, and the size of each sub-pixel region is approximately equal to the area of one quarter of the repeating unit PU. In an embodiment, the area of the first opening O1 and the area of the second opening O2 are, for example, less than or equal to the area of a sub-pixel region. In some embodiments, the opening size of the first opening O1 and the second opening O2 is, for example, about 50 micrometers, and can be integrated into an optical device (eg, a display device) of 254 pixels per inch (ppi). In some embodiments. The opening size of the first opening O1 and the second opening O2 is, for example, about 25 micrometers, and can be integrated into an optical device (for example, a display device) with 508 pixels per inch.
圖3是依照本發明的一實施例的一種光學裝置的剖面示意圖。在此必須說明的是，圖3的實施例沿用圖2的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。FIG. 3 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. It must be noted here that the embodiment of FIG. 3 inherits the component numbers and parts of the embodiment of FIG. 2, in which the same or similar reference numerals are used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and details are not described herein.
請參考圖3，光學裝置20包括多個發光元件E。在本實施例中，發光元件E為微型發光二極體。發光元件E例如是在其他基板（或稱生長基板）上形成後，藉由轉移技術移至透明基板100的第一面F1上。Referring to FIG. 3, the optical device 20 includes a plurality of light emitting elements E. In this embodiment, the light emitting element E is a micro light emitting diode. After the light-emitting element E is formed on another substrate (or a growth substrate), for example, it is moved to the first surface F1 of the transparent substrate 100 by a transfer technique.
絕緣層130與黏著層140位於透明基板100與發光元件E之間。絕緣層130位於發光元件E與第一遮光層110之間。黏著層140位於發光元件E與絕緣層130之間。在一些實施例中，絕緣層130具有黏性，因此不需要形成黏著層140即可將發光元件E黏在第一遮光層110上。The insulating layer 130 and the adhesive layer 140 are located between the transparent substrate 100 and the light-emitting element E. The insulating layer 130 is located between the light-emitting element E and the first light-shielding layer 110. The adhesive layer 140 is located between the light-emitting element E and the insulating layer 130. In some embodiments, the insulating layer 130 is adhesive, so the light-emitting element E can be adhered to the first light-shielding layer 110 without forming the adhesive layer 140.
雖然在本實施例中，絕緣層130並未覆蓋第一開口O1，但本發明不以此為限。在一些實施例中，絕緣層130非不透明材質，絕緣層130可以覆蓋第一開口O1並與透明基板100接觸。Although the first opening O1 is not covered by the insulating layer 130 in this embodiment, the present invention is not limited thereto. In some embodiments, the insulating layer 130 is not opaque. The insulating layer 130 may cover the first opening O1 and contact the transparent substrate 100.
發光元件E包括第一半導體層310、發光層320、第二半導體層330、第一接墊312以及第二接墊332。第一半導體層310與第二半導體層330例如分別是N型摻雜半導體以及P型摻雜半導體。發光層320位於第一半導體層310與第二半導體層330之間，且發光層320例如包括量子井層。絕緣層340覆蓋部分第一半導體層310、部分發光層320以及部分第二半導體層330。第一接墊312以及第二接墊332穿過絕緣層340且分別電性連接第一半導體層310與第二半導體層330，第一訊號線314與第二訊號線334分別電性連接第一接墊312以及第二接墊332。The light-emitting element E includes a first semiconductor layer 310, a light-emitting layer 320, a second semiconductor layer 330, a first pad 312, and a second pad 332. The first semiconductor layer 310 and the second semiconductor layer 330 are, for example, an N-type doped semiconductor and a P-type doped semiconductor. The light emitting layer 320 is located between the first semiconductor layer 310 and the second semiconductor layer 330, and the light emitting layer 320 includes, for example, a quantum well layer. The insulating layer 340 covers part of the first semiconductor layer 310, part of the light emitting layer 320, and part of the second semiconductor layer 330. The first pad 312 and the second pad 332 pass through the insulating layer 340 and are electrically connected to the first semiconductor layer 310 and the second semiconductor layer 330, respectively. The first signal line 314 and the second signal line 334 are electrically connected to the first The pad 312 and the second pad 332.
在一些實施例中，透明基板100還包括多個與發光元件E電性連接的開關元件（未繪出），開關元件例如是電性連接至第一訊號線314或第二訊號線334。In some embodiments, the transparent substrate 100 further includes a plurality of switching elements (not shown) electrically connected to the light-emitting element E. The switching elements are, for example, electrically connected to the first signal line 314 or the second signal line 334.
雖然本實施例的發光元件E是以水平式發光二極體為例，但本發明不以此為限。在其他實施例中，發光元件E可以是垂直式發光二極體、有機發光二極體或其他發光元件。Although the light-emitting element E of this embodiment is an example of a horizontal light-emitting diode, the present invention is not limited thereto. In other embodiments, the light emitting element E may be a vertical light emitting diode, an organic light emitting diode, or other light emitting elements.
保護層150以及平坦層160依序形成於發光元件E上，且覆蓋發光元件E。在一些實施例中，保護層150以及平坦層160還會形成於第一開口O1上。The protective layer 150 and the flat layer 160 are sequentially formed on the light emitting element E and cover the light emitting element E. In some embodiments, the protective layer 150 and the flat layer 160 are further formed on the first opening O1.
感光元件T形成於透明基板100的第二面F2上，且與第二遮光層120重疊。在本實施例中，感光元件T位於第二遮光層120上，且整個感光元件T與第二遮光層120重疊，也就是說，感光元件T的電極不會與第二開口O2重疊，但本發明不以此為限。感光元件T與第二遮光層120之間例如夾有絕緣層180，但本發明不以此為限。The photosensitive element T is formed on the second surface F2 of the transparent substrate 100 and overlaps the second light-shielding layer 120. In this embodiment, the photosensitive element T is located on the second light-shielding layer 120, and the entire photosensitive element T overlaps the second light-shielding layer 120, that is, the electrode of the photosensitive element T does not overlap the second opening O2, but this The invention is not limited to this. An insulating layer 180 is sandwiched between the photosensitive element T and the second light-shielding layer 120, but the present invention is not limited thereto.
感光元件T包括主動元件400、第一電極442、感光層460以及第二電極470。The photosensitive element T includes an active element 400, a first electrode 442, a photosensitive layer 460, and a second electrode 470.
主動元件400形成於透明基板100的第二面F2上。在本實施例中，主動元件400位於第二遮光層120上。主動元件400包括閘極410、閘極絕緣層420、通道層430以及源極/汲極440。閘極410位於絕緣層180上。通道層430與閘極410重疊，且通道層430與閘極410之間夾有閘極絕緣層420。源極/汲極440電性連接至通道層430。雖然本實施例中的主動元件400以底部閘極型薄膜電晶體為例，但本發明不以此為限。主動元件400也可以是頂部閘極型薄膜電晶體或其他類型的主動元件。The active device 400 is formed on the second surface F2 of the transparent substrate 100. In this embodiment, the active device 400 is located on the second light-shielding layer 120. The active device 400 includes a gate 410, a gate insulating layer 420, a channel layer 430, and a source / drain 440. The gate electrode 410 is located on the insulating layer 180. The channel layer 430 overlaps the gate electrode 410, and a gate insulating layer 420 is sandwiched between the channel layer 430 and the gate electrode 410. The source / drain 440 is electrically connected to the channel layer 430. Although the active element 400 in this embodiment is exemplified by a bottom gate thin film transistor, the present invention is not limited thereto. The active device 400 may also be a top-gate thin film transistor or other types of active devices.
儲存電容電極412位於絕緣層180上，且例如是與閘極410在同一道圖案化製程中形成。導通結構446與儲存電容電極412電性連接。在本實施例中，儲存電容電極412與第一電極442共同組成一儲存電容，且儲存電容電極412透過導通結構446而與第二電極470電性連接，以與感光層460形成並聯結構。The storage capacitor electrode 412 is located on the insulating layer 180 and is formed in the same patterning process as the gate electrode 410, for example. The conducting structure 446 is electrically connected to the storage capacitor electrode 412. In this embodiment, the storage capacitor electrode 412 and the first electrode 442 together form a storage capacitor, and the storage capacitor electrode 412 is electrically connected to the second electrode 470 through the conducting structure 446 to form a parallel structure with the photosensitive layer 460.
第一電極442與主動元件400的源極/汲極440電性連接，且導通結構446以及第一電極442例如是與源極/汲極440在同一道圖案化製程中形成。第二遮光層120位於第一電極442與透明基板100之間。The first electrode 442 is electrically connected to the source / drain 440 of the active device 400, and the conductive structure 446 and the first electrode 442 are formed in the same patterning process as the source / drain 440, for example. The second light-shielding layer 120 is located between the first electrode 442 and the transparent substrate 100.
絕緣層450覆蓋源極/汲極440以及導通結構446。感光層460形成於第一電極442上，且位於絕緣層450的開口中。第二電極470形成於感光層460上，且穿過絕緣層450而與導通結構446電性連接。第二電極470的材料例如包括銦錫氧化物、銦鋅氧化物、金屬奈米線、石墨烯或是其他透明或半透明導電材料。第一電極442、感光層460、第二電極470以及第二遮光層120互相重疊，例如是在透明基板100的法線方向D上互相重疊，且第一電極442、感光層460以及第二電極470不與第二開口O2重疊。感光層460位於反射層200以及第二遮光層120之間，待測物X反射的光線（例如光線L）穿過第一開口O1與第二開口O2後抵達反射層200，反射層200反射光線L，被反射層200反射後之光線L穿過第二電極470後抵達感光層460，感光層460可以將光線L轉變成電子訊號。The insulating layer 450 covers the source / drain 440 and the conducting structure 446. The photosensitive layer 460 is formed on the first electrode 442 and is located in the opening of the insulating layer 450. The second electrode 470 is formed on the photosensitive layer 460 and is electrically connected to the conductive structure 446 through the insulating layer 450. The material of the second electrode 470 includes, for example, indium tin oxide, indium zinc oxide, metal nanowires, graphene, or other transparent or translucent conductive materials. The first electrode 442, the photosensitive layer 460, the second electrode 470, and the second light-shielding layer 120 overlap each other, for example, they overlap each other in the normal direction D of the transparent substrate 100, and the first electrode 442, the photosensitive layer 460, and the second electrode 470 does not overlap the second opening O2. The photosensitive layer 460 is located between the reflective layer 200 and the second light-shielding layer 120. The light (for example, light L) reflected by the object X passes through the first opening O1 and the second opening O2 and reaches the reflective layer 200. The reflective layer 200 reflects light L, the light L reflected by the reflective layer 200 passes through the second electrode 470 and reaches the photosensitive layer 460. The photosensitive layer 460 can convert the light L into an electronic signal.
在本實施例中，光學裝置20選擇性的可以包括遮光層480以及絕緣層490。遮光層480大致上對應於主動元件400的通道層430設置，遮光層480例如是與通道層430在透明基板100的法線方向D上互相重疊。遮光層480能夠降低光線造成主動元件400漏電的問題。絕緣層490覆蓋遮光層480以及第二電極470，且可以有保護遮光層480以及第二電極470的功能。In this embodiment, the optical device 20 may optionally include a light shielding layer 480 and an insulating layer 490. The light-shielding layer 480 is substantially provided corresponding to the channel layer 430 of the active device 400. For example, the light-shielding layer 480 and the channel layer 430 overlap each other in the normal direction D of the transparent substrate 100. The light shielding layer 480 can reduce the leakage of light caused by the active device 400. The insulating layer 490 covers the light shielding layer 480 and the second electrode 470, and may have a function of protecting the light shielding layer 480 and the second electrode 470.
雖然在本實施例中，絕緣層180、閘極絕緣層420、絕緣層450以及絕緣層490並未覆蓋第二開口O2，但本發明不以此為限。在一些實施例中，絕緣層180、閘極絕緣層420、絕緣層450以及絕緣層490非不透明材料，絕緣層180、閘極絕緣層420、絕緣層450以及絕緣層490可以覆蓋第二開口O2。Although in this embodiment, the insulating layer 180, the gate insulating layer 420, the insulating layer 450, and the insulating layer 490 do not cover the second opening O2, the invention is not limited thereto. In some embodiments, the insulating layer 180, the gate insulating layer 420, the insulating layer 450, and the insulating layer 490 are non-opaque materials. The insulating layer 180, the gate insulating layer 420, the insulating layer 450, and the insulating layer 490 may cover the second opening O2. .
圖4是依照本發明的一實施例的一種光學裝置的剖面示意圖。圖5是依照本發明的一實施例的一種光學裝置的剖面示意圖。在此必須說明的是，圖4、圖5的實施例沿用圖3的實施例的元件標號與部分內容，其中採用相同或近似的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，在此不贅述。FIG. 4 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. FIG. 5 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. It must be explained here that the embodiments of FIG. 4 and FIG. 5 use the component numbers and parts of the embodiment of FIG. 3, in which the same or similar reference numerals are used to indicate the same or similar components, and the same technical content is omitted. Instructions. For the description of the omitted parts, reference may be made to the foregoing embodiments, and details are not described herein.
圖4、圖5之光學裝置30的感光元件T以及發光元件E的數量及大小僅是用於示意，感光元件T以及發光元件E實際的數量及大小可因應實際需求而調整。The numbers and sizes of the light-receiving elements T and the light-emitting elements E of the optical device 30 in FIGS. 4 and 5 are for illustration only. The actual numbers and sizes of the light-receiving elements T and the light-emitting elements E can be adjusted according to actual needs.
請參考圖4，在本實施例中，第一開口O1與第二開口O2在透明基板100的法線方向D上重疊，其中法線方向D即垂直透明基板100的方向。一部分光線L在穿過第一開口O1與第二開口O2且被反射層200反射後，落入第二開口O2的範圍內，不能被感光元件T接收並轉換成電子訊號。因此，待測物X可以分成光學裝置30偵測不到的第一區R1以及感光元件T可以偵測到的第二區R2。Please refer to FIG. 4. In this embodiment, the first opening O1 and the second opening O2 overlap in a normal direction D of the transparent substrate 100, where the normal direction D is a direction perpendicular to the transparent substrate 100. A part of the light L passes through the first opening O1 and the second opening O2 and is reflected by the reflective layer 200, falls within the range of the second opening O2, and cannot be received by the photosensitive element T and converted into an electronic signal. Therefore, the test object X can be divided into a first region R1 that cannot be detected by the optical device 30 and a second region R2 that can be detected by the photosensitive element T.
為了改善光學裝置30偵測不到待測物X之部分區域的問題，調整了第一開口O1與第二開口O2的相對位置，如圖5所示。In order to improve the problem that the optical device 30 cannot detect a part of the object X, the relative positions of the first opening O1 and the second opening O2 are adjusted, as shown in FIG. 5.
請參考圖5，第一開口O1與第二開口O2在透明基板100的法線方向D上的相對位置出現傾斜，以獲得傾斜的針孔。在本實施例中，以第一開口O1與第二開口O2在透明基板100的法線方向D上不重疊為例。Referring to FIG. 5, the relative positions of the first opening O1 and the second opening O2 in the normal direction D of the transparent substrate 100 are inclined to obtain inclined pinholes. In this embodiment, the first opening O1 and the second opening O2 are not overlapped in the normal direction D of the transparent substrate 100 as an example.
在本實施例中，待測物X的第一區R1反射出來的光線L在穿過最鄰近所述第一區R1的第一開口O1與第二開口O2後，會被反射層200反射，並落入最鄰近所述第一區R1的第二開口O2的範圍內。然而，所述第一區R1反射出來的光線L可以穿過另外一個第一開口O1與另外一個第二開口O2（例如是離所述第一區R1較遠之第一開口O1與第二開口O2），且被反射層200反射後能落入感光元件T的範圍內，因此，第一區R1反射的光線還是可以被光學裝置40所偵測，解決了光學裝置40偵測不到待測物X之部分區域的問題。In this embodiment, the light L reflected from the first region R1 of the object X passes through the first opening O1 and the second opening O2 that are closest to the first region R1, and then is reflected by the reflective layer 200. And fall into the range of the second opening O2 nearest to the first region R1. However, the light L reflected from the first region R1 may pass through another first opening O1 and another second opening O2 (for example, the first opening O1 and the second opening farther from the first region R1). O2), and can fall within the range of the photosensitive element T after being reflected by the reflective layer 200. Therefore, the light reflected by the first region R1 can still be detected by the optical device 40, which solves the problem that the optical device 40 cannot detect the measurement Problems with parts of object X.
本發明之至少一實施例使用透明基板上之第一遮光層的第一開口與第二遮光層的第二開口來作為針孔，因此可以製作出較小針孔，且還有製造成本低廉以及良率高的優點。At least one embodiment of the present invention uses the first opening of the first light-shielding layer and the second opening of the second light-shielding layer as pinholes on the transparent substrate, so that smaller pinholes can be made, and the manufacturing cost is low, and The advantage of high yield.
本發明之至少一實施例藉由反射層的設置，縮減光學裝置的尺寸。At least one embodiment of the present invention reduces the size of the optical device by providing a reflective layer.
本發明之至少一實施例解決了光學裝置偵測不到待測物之部分區域的問題。At least one embodiment of the present invention solves the problem that the optical device cannot detect a part of the area to be measured.
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.
10、20、30、40‧‧‧光學裝置10, 20, 30, 40‧‧‧ optical devices
100‧‧‧透明基板100‧‧‧ transparent substrate
110‧‧‧第一遮光層110‧‧‧first light-shielding layer
120‧‧‧第二遮光層120‧‧‧second light-shielding layer
130‧‧‧絕緣層130‧‧‧ Insulation
140‧‧‧黏著層140‧‧‧ Adhesive layer
150‧‧‧保護層150‧‧‧ protective layer
160‧‧‧平坦層160‧‧‧ flat layer
180、450‧‧‧絕緣層180, 450‧‧‧ Insulation
200‧‧‧反射層200‧‧‧Reflective layer
310‧‧‧第一半導體層310‧‧‧First semiconductor layer
312‧‧‧第一接墊312‧‧‧The first pad
314‧‧‧第一訊號線314‧‧‧The first signal line
320‧‧‧發光層320‧‧‧Light-emitting layer
330‧‧‧第二半導體層330‧‧‧Second semiconductor layer
332‧‧‧第二接墊332‧‧‧Second pad
334‧‧‧第二訊號線334‧‧‧The second signal line
340‧‧‧絕緣層340‧‧‧ Insulation
400‧‧‧主動元件400‧‧‧active element
410‧‧‧閘極410‧‧‧Gate
412‧‧‧儲存電容電極412‧‧‧storage capacitor electrode
420‧‧‧閘極絕緣層420‧‧‧Gate insulation
430‧‧‧通道層430‧‧‧Channel layer
440‧‧‧源極/汲極440‧‧‧Source / Drain
442‧‧‧第一電極442‧‧‧first electrode
446‧‧‧導通結構446‧‧‧Conduction structure
60‧‧‧感光層60‧‧‧Photosensitive layer
470‧‧‧第二電極470‧‧‧Second electrode
480‧‧‧遮光層480‧‧‧Light-shielding layer
490‧‧‧絕緣層490‧‧‧ insulation
B‧‧‧藍光發光元件B‧‧‧ blue light emitting element
E‧‧‧發光元件E‧‧‧Light-emitting element
F1‧‧‧第一面F1‧‧‧ the first side
F2‧‧‧第二面F2‧‧‧Second Side
G‧‧‧綠光發光元件G‧‧‧Green light emitting element
H、H1‧‧‧間距H, H1‧‧‧‧pitch
I‧‧‧紅外光發光元件I‧‧‧ infrared light emitting element
L‧‧‧光線L‧‧‧light
O1‧‧‧第一開口O1‧‧‧First opening
O2‧‧‧第二開口O2‧‧‧Second opening
P‧‧‧厚度P‧‧‧Thickness
R‧‧‧紅光發光元件R‧‧‧Red light emitting element
R1‧‧‧第一區R1‧‧‧ District 1
R2‧‧‧第二區R2‧‧‧Second District
SR‧‧‧感測區SR‧‧‧Sensor area
T‧‧‧感光元件T‧‧‧photosensitive element
W1、W2‧‧‧開口尺寸W1, W2‧‧‧ opening size
X‧‧‧待測物X‧‧‧DUT
圖1A是依照本發明的一實施例的一種光學裝置的上視示意圖。 圖1B是依照本發明的一實施例的一種光學裝置的上視示意圖。 圖1C是依照本發明的一實施例的一種光學裝置的上視示意圖。 圖2是依照本發明的一實施例的一種光學裝置的剖面示意圖。 圖3是依照本發明的一實施例的一種光學裝置的剖面示意圖。 圖4是依照本發明的一實施例的一種光學裝置的剖面示意圖。 圖5是依照本發明的一實施例的一種光學裝置的剖面示意圖。FIG. 1A is a schematic top view of an optical device according to an embodiment of the invention. FIG. 1B is a schematic top view of an optical device according to an embodiment of the invention. FIG. 1C is a schematic top view of an optical device according to an embodiment of the invention. FIG. 2 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. FIG. 3 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. FIG. 4 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. FIG. 5 is a schematic cross-sectional view of an optical device according to an embodiment of the invention.
Claims (13)
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| Application Number | Priority Date | Filing Date | Title |
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| TW107102467A TWI655786B (en) | 2018-01-24 | 2018-01-24 | Optical device |
| CN201810230504.0A CN108493215B (en) | 2018-01-24 | 2018-03-20 | Optical device |
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| TW107102467A TWI655786B (en) | 2018-01-24 | 2018-01-24 | Optical device |
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| TW201933619A TW201933619A (en) | 2019-08-16 |
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| CN111310527A (en) * | 2018-12-12 | 2020-06-19 | 上海耕岩智能科技有限公司 | Under-screen image acquisition structure and electronic equipment |
| CN110021621A (en) * | 2019-03-28 | 2019-07-16 | 苏州佳世达电通有限公司 | Display |
| US11356583B2 (en) | 2019-06-05 | 2022-06-07 | Shanghai Harvest Intelligence Technology Co., Ltd. | Image capturing apparatus, electronic equipment and terminal |
| CN112055133B (en) * | 2019-06-05 | 2023-01-06 | 上海耕岩智能科技有限公司 | Image acquisition device and electronic equipment |
| TWI724855B (en) * | 2020-04-06 | 2021-04-11 | 富元精密科技股份有限公司 | Light emitting diode device structure |
| US20220050985A1 (en) * | 2020-08-17 | 2022-02-17 | Au Optronics Corporation | Biometric sensing apparatus |
| CN114187870B (en) | 2020-09-14 | 2023-05-09 | 京东方科技集团股份有限公司 | Photoelectric detection circuit, driving method thereof, display device and manufacturing method thereof |
| TWI748736B (en) * | 2020-11-06 | 2021-12-01 | 友達光電股份有限公司 | Light emitting device and fabrication method thereof |
| TWI768808B (en) * | 2021-04-01 | 2022-06-21 | 友達光電股份有限公司 | Light shielding element substrate and display device |
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