CN108493215B

CN108493215B - Optical device

Info

Publication number: CN108493215B
Application number: CN201810230504.0A
Authority: CN
Inventors: 林志豪; 章钧
Original assignee: AU Optronics Corp
Current assignee: AU Optronics Corp
Priority date: 2018-01-24
Filing date: 2018-03-20
Publication date: 2021-06-04
Anticipated expiration: 2038-03-20
Also published as: TWI655786B; TW201933619A; CN108493215A

Abstract

An optical device includes a transparent substrate, a first light-shielding layer, a second light-shielding layer, a plurality of photosensitive elements, and a reflective layer. The first shading layer is located on the first surface of the transparent substrate and is provided with a first opening. The second shading layer is located on the second surface of the transparent substrate and is provided with a second opening. At least part of the photosensitive element is positioned on the second shading layer. The at least one photosensitive element comprises a first electrode, a photosensitive layer and a second electrode. The second shading layer is positioned between the first electrode and the transparent substrate. The photosensitive layer is formed on the first electrode. The second electrode is formed on the photosensitive layer. The first electrode, the photosensitive layer and the second electrode do not overlap the second opening. The reflecting layer is separated from the transparent substrate by a distance. The photosensitive layer is positioned between the reflecting layer and the second shading layer.

Description

Optical device

Technical Field

The present invention relates to an optical device, and more particularly, to an optical device having a photosensitive element.

Background

A photo sensor is a commonly used detection device, and the photo sensor converts a received optical signal into a corresponding electrical signal.

Currently, the market demand is moving towards more function-integrated electronic devices, such as electronic devices that integrate multiple components together. In a conventional electronic device provided with a display device, for example: in a mobile phone, a tablet computer, a digital camera, etc., a photosensitive element is usually disposed in a peripheral region (or a frame region) of a display panel, which increases the size of the peripheral region in the display panel. In addition, in some devices requiring a photosensitive element to be matched with a pinhole array, holes are generally drilled in the substrate for use as pinholes, however, the pinholes formed by the drilling process are often too large, so that the thickness of the whole device must be enlarged to obtain a sufficient image distance between the pinholes and the photosensitive element, which makes the size of the whole device difficult to be reduced. Therefore, a solution to the above problems is needed.

Disclosure of Invention

At least one embodiment of the present invention provides an optical device, which can solve the problem that the size of a photosensitive element is difficult to reduce.

At least one embodiment of the present invention provides an optical device, which includes a transparent substrate, a first light-shielding layer, a second light-shielding layer, a plurality of photosensitive elements, and a reflective layer. The first shading layer is positioned on the first surface of the transparent substrate and is provided with at least one first opening. The second shading layer is positioned on the second surface of the transparent substrate and is provided with at least one second opening. The photosensitive element is at least partially positioned on the second shading layer. The at least one photosensitive element comprises a first electrode, a photosensitive layer and a second electrode. The second shading layer is positioned between the first electrode and the transparent substrate. The photosensitive layer is formed on the first electrode. The second electrode is formed on the photosensitive layer. The first electrode, the photosensitive layer, and the second electrode do not overlap the second opening in a normal direction of the transparent substrate. The reflecting layer is separated from the transparent substrate by a distance. The photosensitive layer is positioned between the reflecting layer and the second shading layer.

It is an object of the present invention to reduce the size of optical devices.

One of the objectives of the present invention is to reduce the manufacturing cost of the optical device and to improve the yield of the optical device.

In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1A is a schematic top view of an optical device according to an embodiment of the invention.

Fig. 1B is a schematic top view of an optical device according to an embodiment of the invention.

Fig. 1C is a schematic top view of an optical device according to an embodiment of the invention.

Fig. 2 is a schematic cross-sectional view of an optical device according to an embodiment of the invention.

Fig. 3 is a schematic cross-sectional view of an optical device according to an embodiment of the invention.

Fig. 4 is a schematic cross-sectional view of an optical device according to an embodiment of the invention.

Fig. 5 is a schematic cross-sectional view of an optical device according to an embodiment of the invention.

List of reference numerals

10. 20, 30, 40: optical device

100: transparent substrate

110: a first light-shielding layer

120: a second light-shielding layer

130: insulating layer

140: adhesive layer

150: protective layer

160: planarization layer

180. 450: insulating layer

200: reflective layer

310: first semiconductor layer

312: first pad

314: first signal line

320: luminescent layer

330: a second semiconductor layer

332: second pad

334: second signal line

340: insulating layer

400: active component

410: grid (Gate pole)

412: storage capacitor electrode

420: gate insulating layer

430: channel layer

440: source/drain

442: a first electrode

446: conduction structure

460: photosensitive layer

470: second electrode

480: light shielding layer

490: insulating layer

B: blue light emitting element

E: light emitting element

F1: first side

F2: second surface

G: green light emitting element

H. H1: distance between each other

I: infrared light emitting element

L: light ray

O1: first opening

O2: second opening

P: thickness of

R: red light emitting device

R1: first region

R2: second region

SR: sensing region

T: photosensitive element

W1, W2: size of opening

X: test object

Detailed Description

Fig. 1A is a schematic top view of an optical device according to an embodiment of the invention. Fig. 2 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. FIG. 2 is a schematic cross-sectional view taken along line a-a' of FIG. 1A, for example.

Referring to fig. 1A and 2, the optical device 10 includes a transparent substrate 100, a first light-shielding layer 110, a second light-shielding layer 120, a plurality of photosensitive elements T, a reflective layer 200, and a plurality of light-emitting elements E.

The transparent substrate 100 may be made of glass, quartz, organic polymer, sapphire crystal glass, or other suitable materials. The thickness P of the transparent substrate 100 is, for example, 50 to 800 micrometers.

The first light shielding layer 110 is disposed on the first surface F1 of the transparent substrate 100 and has at least one first opening O1. The second light-shielding layer 120 is located on the second surface F2 of the transparent substrate 100 and has at least one second opening O2. In some embodiments, the thickness of the first light shielding layer 110 is, for example, 0.2 to 2 microns, and the thickness of the second light shielding layer 120 is, for example, 0.2 to 2 microns. In some embodiments, the opening dimension W1 of the first opening O1 is, for example, 25 to 100 microns, and the opening dimension W2 of the second opening O2 is, for example, 25 to 100 microns. The distance between the adjacent first openings O1 is, for example, ten times the opening size of the first opening O1. The first light-shielding layer 110 and the second light-shielding layer 120 comprise the same or different materials, and in some embodiments, the materials of the first light-shielding layer 110 and the second light-shielding layer 120 comprise metals, metal compounds (e.g., silver halides), resins, or other suitable materials.

The first opening O1 of the first light-shielding layer 110 on the transparent substrate 100 and the second opening O2 of the second light-shielding layer 120 on the transparent substrate 100 cooperate with each other to serve as a pinhole, and the light L (or the emitted light) reflected by the object X to be tested (e.g., a finger print, a palm print, a face or other objects) can pass through the pinhole formed by the first opening O1 and the second opening O2.

In some embodiments, the first opening O1 of the first light-shielding layer 110 and the second opening O2 of the second light-shielding layer 120 are formed by a photolithography (photolithography) process, so that the opening size of the pinhole formed by the first opening O1 and the second opening O2 (e.g., the opening size W1 of the first opening O1 or the opening size W2 of the second opening O2 or the average of the two) can be smaller, which has the advantages of low cost and high yield.

In some embodiments, the area of the first opening O1 is substantially the same as the area of the second opening O2. The first opening O1 and the second opening O2 have a small area, so that the optical device 10 can effectively perform light sensing without a large image distance, and thus, the size of the optical device 10 can be reduced.

In the present embodiment, the opening contour of the first opening O1 and the opening contour of the second opening O2 are square, but not limited thereto. In other embodiments, the opening contour of the first opening O1 and the opening contour of the second opening O2 may be circular (as shown in fig. 1B), elliptical, triangular, rectangular, pentagonal, hexagonal, heptagonal, octagonal, or other geometric shapes. In some embodiments, the opening profile of the first opening O1 is substantially the same as the opening profile of the second opening O2.

In the present embodiment, the first openings O1 with square openings and the square light emitting devices E are arranged in an array, but not limited thereto. In other embodiments, as shown in fig. 1C, the first openings O1 having an opening profile of a regular hexagon may be arranged in a honeycomb-shaped array with the light emitting elements E.

The photosensitive element T is located on the second light shielding layer 110, and the photosensitive element T does not overlap the second opening O2. The reflective layer 200 is separated from the transparent substrate 100 by a distance H. The photosensitive element T is located between the reflective layer 200 and the second light shielding layer 120.

The Light Emitting element E includes, for example, an Organic Light-Emitting Diode (OLED) or a Micro Light-Emitting Diode (Micro Light-Emitting Diode). The light emitting element E is located on the first light shielding layer 110, and the light emitting element E does not overlap the first opening O1. In the present embodiment, the light emitting device E includes a plurality of visible light emitting devices and at least one infrared light emitting device I. The visible light emitting element may include a light emitting element of at least one color of a red light emitting element, a blue light emitting element, and a green light emitting element, and may include, for example, a plurality of red light emitting elements, or may include, for example, a combination of a plurality of red light emitting elements and a plurality of green light emitting elements. In the present embodiment, the light emitting element E includes a plurality of red light emitting elements R, a plurality of blue light emitting elements B, a plurality of green light emitting elements G, and a plurality of infrared light emitting elements I, but the invention is not limited thereto. The light emitting element E may also include a light emitting element capable of emitting light of other wavelengths.

In this embodiment, each repeating unit PU of the optical device 10 includes a red light emitting device R, a blue light emitting device B, a green light emitting device G, and an infrared light emitting device I, wherein the red light emitting device R, the blue light emitting device B, and the green light emitting device G can emit visible light, which directly affects the quality of the image displayed by the optical device 10, the infrared light emitting device I can emit infrared light, the infrared light (for example, light L) illuminates the object X to be detected and then is reflected back to the optical device 10, and the light sensing device T of the optical device 10 collects the reflected infrared light to detect the object X to be detected.

The light L passes through the pinhole formed by the first opening O1 and the second opening O2 and reaches the reflective layer 200, and then is reflected by the reflective layer 200 to the light-sensing element T. The light L is collected by the photosensitive element T to detect the object X. The reflective layer 200 may be a coating layer coated on a substrate (not shown), or may be a metal substrate or other substrate capable of reflecting light.

In the embodiment, the sensing region SR is between the reflective layer 200 and the second light-shielding layer 120, and the arrangement of the reflective layer 200 increases the moving path of the light L in the sensing region SR, so that the distance H between the reflective layer 200 and the transparent substrate 100 is not large, the light L can have a sufficient moving distance (e.g., an image distance from a pinhole to the photosensitive device T) in the sensing region SR, and the size of the optical device 10 can be further reduced.

In some embodiments, the distance H1 between the object X and the transparent substrate 100 is greater than the distance H between the reflective layer 200 and the transparent substrate 100, so that a complete restored image can be obtained.

Although the light-sensing element T converts infrared light into an electronic signal in the present embodiment, the invention is not limited thereto. In other embodiments, the light sensing element T can also convert light of other wavelengths into an electronic signal. Although the light source of the infrared light detected by the light sensing element T is the infrared light emitting element I in the embodiment, the invention is not limited thereto. The light sensing element T may also detect light reflected from the object X illuminated by ambient light.

In the embodiment, the first opening O1 and the second opening O2 are disposed corresponding to the positions of the infrared light emitting devices I in the repeating unit PU, in other words, the first opening O1 and the second opening O2 are disposed to only reduce the number of the infrared light emitting devices I, but not reduce the number of the red light emitting devices R, the blue light emitting devices B and the green light emitting devices G, so that the quality of the image displayed by the optical apparatus 10 can be maintained. In the present embodiment, the number of infrared light emitting elements I is less than the number of red light emitting elements R, the number of blue light emitting elements B, or the number of green light emitting elements G. In other words, in an embodiment, the total number of the infrared light emitting devices and the at least one first opening is equal to the number of the red light emitting devices, the blue light emitting devices, or the green light emitting devices.

In the embodiment, each repeating unit PU includes four sub-pixel regions, a red sub-pixel region, a blue sub-pixel region, a green sub-pixel region and an infrared sub-pixel region, which correspond to the red light emitting device R, the blue light emitting device B, the green light emitting device G and the infrared light emitting device I, respectively, and the size of each sub-pixel region is approximately equal to the area of one quarter of the repeating unit PU. In one embodiment, the area of the first opening O1 and the area of the second opening O2 are, for example, less than or equal to the area of one sub-pixel region. In some embodiments, the opening sizes of the first opening O1 and the second opening O2 are about 50 microns, for example, and can be integrated into an optical device (e.g., a display device) with 254 Pixels Per Inch (Pixels Per inc, ppi). In some embodiments. The opening sizes of the first opening O1 and the second opening O2 are, for example, about 25 microns, and can be integrated 508 per inch of pixel optics (e.g., display devices).

Fig. 3 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. It should be noted that the embodiment of fig. 3 follows the element reference numbers (reference numbers) and part of the contents of the embodiment of fig. 2, wherein the same or similar reference numbers are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, which are not repeated herein.

Referring to fig. 3, the optical device 20 includes a plurality of light emitting elements E. In the present embodiment, the light emitting element E is a micro light emitting diode. The light emitting element E is formed on another substrate (or growth substrate), and then transferred to the first surface F1 of the transparent substrate 100 by a transfer technique.

The insulating layer 130 and the adhesive layer 140 are located between the transparent substrate 100 and the light emitting element E. The insulating layer 130 is located between the light emitting element E and the first light shielding layer 110. The adhesive layer 140 is located between the light emitting element E and the insulating layer 130. In some embodiments, the insulating layer 130 is adhesive, so that the light emitting device E can be adhered to the first light shielding layer 110 without forming the adhesive layer 140.

Although the insulating layer 130 does not cover the first opening O1 in the embodiment, the invention is not limited thereto. In some embodiments, the insulating layer 130 is not opaque, and the insulating layer 130 may cover the first opening O1 and contact the transparent substrate 100.

The light emitting device E includes a first semiconductor layer 310, a light emitting layer 320, a second semiconductor layer 330, a first pad 312, and a second pad 332. The first semiconductor layer 310 and the second semiconductor layer 330 are, for example, an N-type doped semiconductor and a P-type doped semiconductor, respectively. The light emitting layer 320 is located between the first semiconductor layer 310 and the second semiconductor layer 330, and the light emitting layer 320 includes, for example, a quantum well layer. The insulating layer 340 covers a portion of the first semiconductor layer 310, a portion of the light emitting layer 320, and a portion of the second semiconductor layer 330. The first pad 312 and the second pad 332 penetrate through the insulating layer 340 and are electrically connected to the first semiconductor layer 310 and the second semiconductor layer 330, respectively, and the first signal line 314 and the second signal line 334 are electrically connected to the first pad 312 and the second pad 332, respectively.

In some embodiments, the transparent substrate 100 further includes a plurality of switching elements (not shown) electrically connected to the light emitting elements E, for example, the switching elements are electrically connected to the first signal lines 314 or the second signal lines 334.

Although the light emitting element E of the present embodiment is a horizontal light emitting diode as an example, the invention is not limited thereto. In other embodiments, the light emitting element E may be a vertical light emitting diode, an organic light emitting diode, or other light emitting element.

The passivation layer 150 and the planarization layer 160 are sequentially formed on the light emitting element E, and cover the light emitting element E. In some embodiments, the protection layer 150 and the planarization layer 160 are also formed on the first opening O1.

The photosensitive element T is formed on the second surface F2 of the transparent substrate 100 and overlaps the second light-shielding layer 120. In the embodiment, the photosensitive element T is located on the second light shielding layer 120, and the entire photosensitive element T overlaps the second light shielding layer 120, that is, the electrode of the photosensitive element T does not overlap the second opening O2, but the invention is not limited thereto. For example, an insulating layer 180 is sandwiched between the photosensitive element T and the second light-shielding layer 120, but the invention is not limited thereto.

The photosensitive element T includes an active device 400, a first electrode 442, a photosensitive layer 460 and a second electrode 470.

The active device 400 is formed on the second surface F2 of the transparent substrate 100. In the present embodiment, the active device 400 is located on the second light shielding layer 120. The active device 400 includes a gate 410, a gate insulating layer 420, a channel layer 430, and source/drains 440. The gate electrode 410 is positioned on the insulating layer 180. The channel layer 430 overlaps the gate 410, and a gate insulating layer 420 is interposed between the channel layer 430 and the gate 410. The source/drain 440 is electrically connected to the channel layer 430. Although the active device 400 in the present embodiment is exemplified by a bottom gate thin film transistor (tft), the invention is not limited thereto. The active device 400 may also be a top gate type thin film transistor or other type of active device.

The storage capacitor electrode 412 is disposed on the insulating layer 180 and is formed in the same patterning process as the gate electrode 410, for example. The conductive structure 446 is electrically connected to the storage capacitor electrode 412. In the present embodiment, the storage capacitor electrode 412 and the first electrode 442 form a storage capacitor, and the storage capacitor electrode 412 is electrically connected to the second electrode 470 through the conducting structure 446, so as to form a parallel structure with the photosensitive layer 460.

The first electrode 442 is electrically connected to the source/drain 440 of the active device 400, and the conductive structure 446 and the first electrode 442 are formed in the same patterning process as the source/drain 440, for example. The second light shielding layer 120 is located between the first electrode 442 and the transparent substrate 100.

The insulating layer 450 covers the source/drain 440 and the conductive structure 446. The photosensitive layer 460 is formed on the first electrode 442 and located in the opening of the insulating layer 450. The second electrode 470 is formed on the photosensitive layer 460, and electrically connected to the conductive structure 446 through the insulating layer 450. The material of the second electrode 470 includes, for example, indium tin oxide, indium zinc oxide, metal nanowires, graphene, or other transparent or translucent conductive material. The first electrode 442, the photosensitive layer 460, the second electrode 470 and the second light shielding layer 120 overlap each other, for example, overlap each other in the normal direction D of the transparent substrate 100, and the first electrode 442, the photosensitive layer 460 and the second electrode 470 do not overlap the second opening O2. The photosensitive layer 460 is located between the reflective layer 200 and the second light shielding layer 120, the light (e.g., light L) reflected by the object X reaches the reflective layer 200 after passing through the first opening O1 and the second opening O2, the reflective layer 200 reflects the light L, the light L reflected by the reflective layer 200 reaches the photosensitive layer 460 after passing through the second electrode 470, and the photosensitive layer 460 can convert the light L into an electrical signal.

In the present embodiment, the optical device 20 may optionally include a light-shielding layer 480 and an insulating layer 490. The light-shielding layer 480 is disposed substantially corresponding to the channel layer 430 of the active device 400, and the light-shielding layer 480 and the channel layer 430 overlap each other in the normal direction D of the transparent substrate 100, for example. The light-shielding layer 480 can reduce the problem of light leakage of the active device 400. The insulating layer 490 covers the light-shielding layer 480 and the second electrode 470, and may function to protect the light-shielding layer 480 and the second electrode 470.

Although the insulating layer 180, the gate insulating layer 420, the insulating layer 450, and the insulating layer 490 do not cover the second opening O2 in the present embodiment, the invention is not limited thereto. In some embodiments, the insulating layer 180, the gate insulating layer 420, the insulating layer 450, and the insulating layer 490 are not opaque materials, and the insulating layer 180, the gate insulating layer 420, the insulating layer 450, and the insulating layer 490 may cover the second opening O2.

Fig. 4 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. Fig. 5 is a schematic cross-sectional view of an optical device according to an embodiment of the invention. It should be noted that the embodiment of fig. 4 and 5 follows the reference numerals and parts of the contents of the elements of the embodiment of fig. 3, wherein the same or similar reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, which are not repeated herein.

The numbers and sizes of the light sensing elements T and the light emitting elements E of the optical device 30 shown in fig. 4 and 5 are only for illustration, and the actual numbers and sizes of the light sensing elements T and the light emitting elements E can be adjusted according to actual requirements.

Referring to fig. 4, in the present embodiment, the first opening O1 and the second opening O2 overlap in a normal direction D of the transparent substrate 100, wherein the normal direction D is perpendicular to the transparent substrate 100. After passing through the first opening O1 and the second opening O2 and being reflected by the reflective layer 200, a portion of the light L falls within the range of the second opening O2 and cannot be received by the light-sensing element T and converted into an electronic signal. Therefore, the object X can be divided into a first region R1 that is not detected by the optical device 30 and a second region R2 that can be detected by the photosensitive element T.

In order to improve the problem that the optical device 30 cannot detect the partial region of the object X, the relative positions of the first opening O1 and the second opening O2 are adjusted, as shown in fig. 5.

Referring to fig. 5, the relative positions of the first opening O1 and the second opening O2 in the normal direction D of the transparent substrate 100 are offset from each other to obtain an inclined pinhole. In the present embodiment, the first opening O1 and the second opening O2 do not overlap in the normal direction D of the transparent substrate 100.

In the embodiment, the light L reflected from the first region R1 of the object X passes through the first opening O1 and the second opening O2 most adjacent to the first region R1, and is reflected by the reflective layer 200 and falls into the range of the second opening O2 most adjacent to the first region R1. However, the light L reflected from the first region R1 can pass through another first opening O1 and another second opening O2 (for example, the first opening O1 and the second opening O2 which are far from the first region R1), and can fall within the range of the photosensitive element T after being reflected by the reflective layer 200, so that the light reflected by the first region R1 can be detected by the optical device 40, and the problem that the optical device 40 cannot detect a part of the region of the object X to be detected is solved.

In at least one embodiment of the present invention, the first opening of the first light shielding layer and the second opening of the second light shielding layer on the transparent substrate are used as pinholes, so that smaller pinholes can be manufactured, and the advantages of low manufacturing cost and high yield are also provided.

At least one embodiment of the present invention reduces the size of the optical device by the provision of the reflective layer.

At least one embodiment of the invention solves the problem that the optical device cannot detect a partial area of the object to be measured.

Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, and that various changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the invention.

Claims

1. An optical device, comprising:

a transparent substrate including a first surface and a second surface oppositely disposed;

a first light shielding layer disposed on the first surface of the transparent substrate and having at least one first opening;

a second light-shielding layer located on the second surface of the transparent substrate and having at least one second opening;

a plurality of photosensitive elements, at least part of which is located on the second light shielding layer, wherein at least one photosensitive element comprises:

a first electrode, the second shading layer is positioned between the first electrode and the transparent substrate;

a photosensitive layer on the first electrode; and

a second electrode located on the photosensitive layer, wherein the first electrode, the photosensitive layer and the second electrode do not overlap with the at least one second opening in a normal direction of the transparent substrate;

a reflective layer spaced apart from the transparent substrate by a distance, wherein the photosensitive layer of the at least one photosensitive element is located between the reflective layer and the second light-shielding layer; and

and the plurality of light-emitting elements are positioned on the first shading layer, and do not cover the at least one first opening.

2. The optical device of claim 1, wherein the plurality of light emitting elements comprises a plurality of visible light emitting elements and at least one infrared light emitting element.

3. The optical device of claim 2, wherein the plurality of visible light emitting elements comprises at least one color of light emitting elements from among a plurality of red light emitting elements, a plurality of blue light emitting elements, and a plurality of green light emitting elements.

4. The optical device of claim 1, wherein the plurality of light emitting elements comprises a plurality of red light emitting elements, a plurality of blue light emitting elements, a plurality of green light emitting elements, and a plurality of infrared light emitting elements, the number of infrared light emitting elements being less than the number of red light emitting elements, the number of blue light emitting elements, or the number of green light emitting elements.

5. The optical device of claim 1, wherein the plurality of light-emitting elements comprise micro light-emitting diodes.

6. The optical device of claim 1, further comprising an insulating layer between the plurality of light emitting elements and the first light shielding layer.

7. The optical device of claim 1, wherein the at least one first opening and the at least one second opening overlap in the normal direction of the transparent substrate.

8. The optical device of claim 1, wherein the at least one first opening and the at least one second opening do not overlap in the normal direction of the transparent substrate.

9. The optical device of claim 1, wherein an area of the at least one first opening is substantially the same as an area of the at least one second opening.

10. The optical device of claim 1, wherein an opening profile of the at least one first opening is substantially the same as an opening profile of the at least one second opening.

11. The optical device according to claim 1, wherein the at least one photosensitive element further comprises an active element formed on the second surface of the transparent substrate and electrically connected to the first electrode.

12. The optical device of claim 1, wherein the at least one first opening comprises two first openings, the spacing between the two first openings being ten times the opening size of the two first openings.