TWI651526B - Gas detection device - Google Patents

Abstract

本發明公開一種氣體量測裝置，其包括一腔體模組、一發光模組及一光感測模組。腔體模組包括一聚光腔體、一容置腔體及一採樣腔體。聚光腔體具有一第一反射結構、一第二反射結構及一第三反射結構。第一反射結構設置於第二反射結構與第三反射結構之間。發光模組設置於聚光腔體上，發光模組包括一發光單元。發光單元對應於聚光腔體。光感測模組包括一光感測單元，光感測單元設置於容置腔體中。藉此，本發明能提高腔體模組的集光性。 The invention discloses a gas measuring device, which comprises a cavity module, a light emitting module and a light sensing module. The cavity module includes a concentrating cavity, a receiving cavity and a sampling cavity. The concentrating cavity has a first reflective structure, a second reflective structure and a third reflective structure. The first reflective structure is disposed between the second reflective structure and the third reflective structure. The illuminating module is disposed on the concentrating cavity, and the illuminating module comprises a illuminating unit. The light emitting unit corresponds to the light collecting cavity. The light sensing module includes a light sensing unit, and the light sensing unit is disposed in the receiving cavity. Thereby, the present invention can improve the light collection of the cavity module.

Description

氣體量測裝置 Gas measuring device

本發明涉及一種氣體量測裝置，特別是涉及一種可量測氣體濃度的氣體量測裝置。 The present invention relates to a gas measuring device, and more particularly to a gas measuring device capable of measuring gas concentration.

首先，現在市面上販售的二氧化碳偵測裝置或二氧化碳分析儀，幾乎都是採用非分散式紅外線(Non-dispersive Infrared,NDIR)吸收法來偵測氣體濃度，其主要依據比爾-朗伯定律(Beer-Lambert law)進行計算。它的原理係利用氣體對紅外線特殊波長的吸收特性以及氣體濃度與吸收量成正比之特性，來偵測特定氣體濃度。例如一氧化碳對4.7微米(μm)波長、二氧化碳對4.3微米(μm)波長之紅外線的吸收性最強。 First of all, the carbon dioxide detection devices or carbon dioxide analyzers currently on the market almost all use the non-dispersive infrared (NDIR) absorption method to detect the gas concentration, which is mainly based on the Beer-Lambert law. Beer-Lambert law) for calculations. Its principle is to use a gas to absorb the specific wavelength of infrared rays and the concentration of gas is proportional to the amount of absorption to detect specific gas concentrations. For example, carbon monoxide has the strongest absorption of 4.7 micrometer (μm) wavelength and carbon dioxide to infrared light of 4.3 micrometer (μm) wavelength.

以目前市面上之氣體濃度量測裝置的量測精度，仍然受限於氣體採樣室的結構設計，當投射至紅外線感測器的紅外線的量減少，將會影響氣體濃度的量測精度。 The measurement accuracy of the gas concentration measuring device currently on the market is still limited by the structural design of the gas sampling chamber. When the amount of infrared light projected to the infrared sensor is reduced, the measurement accuracy of the gas concentration will be affected.

另外，如專利公告第TWM476923號的“高效率之非色散式紅外線氣腔”專利案中，主要利用橢圓型雙焦點特性，將紅外線光源置於一焦點，紅外線感測器置於另一焦點，以獲得高集光性，同時滿足紅外線感測器所需之窄入射角需求。但是，TWM476923號專利案，雖然能有效的提高集光性，但是，將會因為了利用橢圓雙焦點的特性而增加紅外線氣腔本體200的長度，使其整體體積過大。再者，也容易因生產組裝工藝所造成的誤差，而使得紅外線感測器不在正確的焦點位置上，進而導致紅外線感測器的接收訊號下降。 In addition, in the patent application "High-efficiency non-dispersive infrared air cavity" of the patent publication No. TWM476923, the elliptical bifocal characteristic is mainly used, the infrared light source is placed at a focus, and the infrared sensor is placed at another focus. Achieve high concentrating while meeting the narrow incident angle requirements required for infrared sensors. However, although the TWM476923 patent can effectively improve the light collecting property, the length of the infrared gas chamber body 200 is increased by utilizing the characteristics of the elliptical bifocal point, so that the overall volume is too large. Moreover, it is also easy to cause errors in the assembly process, so that the infrared sensor is not in the correct focus position, and thus the receiving signal of the infrared sensor is lowered.

進一步而言，以典型的紅外線光感測器而言，投射到紅外線光感測器上的入射光線的入射角大於20度時，將會因為濾波片有一定波帶寬度，而使得濾波片峰值向短波長偏移約為40nm(nanometer)。藉此，將會造成有一部分原本不屬於待測氣體吸收的光線得以投射至紅外線光感測器，而另一部分與待測氣體濃度相互關聯的光線被攔截在外，從而降低了信號強度，進而降低了實際上的量測精度。 Further, in a typical infrared light sensor, when the incident angle of the incident light projected onto the infrared light sensor is greater than 20 degrees, the filter peak will be caused by the filter having a certain band width. The shift to short wavelength is about 40 nm (nanometer). Thereby, a part of the light which is not absorbed by the gas to be tested is projected to the infrared light sensor, and another part of the light which is correlated with the gas concentration to be measured is intercepted, thereby reducing the signal intensity and thereby reducing The actual measurement accuracy.

本發明所要解決的技術問題在於，針對現有技術的不足提供一種氣體量測裝置。 The technical problem to be solved by the present invention is to provide a gas measuring device for the deficiencies of the prior art.

為了解決上述的技術問題，本發明所採用的其中一技術方案是，提供一種氣體量測裝置，其包括一腔體模組、一發光模組以及一光感測模組。所述腔體模組包括一聚光腔體、一容置腔體以及一連接於所述聚光腔體及所述容置腔體之間的採樣腔體，其中，所述聚光腔體具有一第一反射結構、一連接於所述第一反射結構的第二反射結構以及一連接於所述第一反射結構的第三反射結構，其中，所述第一反射結構設置於所述第二反射結構與所述第三反射結構之間。所述發光模組設置於所述聚光腔體上，所述發光模組包括一發光單元，其中所述發光單元對應於所述聚光腔體。所述光感測模組包括一光感測單元，所述光感測單元設置於所述容置腔體中。 In order to solve the above technical problem, one of the technical solutions adopted by the present invention is to provide a gas measuring device, which comprises a cavity module, a light emitting module and a light sensing module. The cavity module includes a concentrating cavity, a accommodating cavity, and a sampling cavity connected between the concentrating cavity and the accommodating cavity, wherein the concentrating cavity a first reflective structure, a second reflective structure coupled to the first reflective structure, and a third reflective structure coupled to the first reflective structure, wherein the first reflective structure is disposed on the first Between the two reflective structures and the third reflective structure. The illuminating module is disposed on the concentrating cavity, and the illuminating module comprises a illuminating unit, wherein the illuminating unit corresponds to the concentrating cavity. The light sensing module includes a light sensing unit, and the light sensing unit is disposed in the receiving cavity.

本發明所採用的另外一技術方案是，提供一種氣體量測裝置其包括一腔體模組、一發光模組以及一光感測模組。所述腔體模組包括一聚光腔體、一容置腔體以及一連接於所述聚光腔體及所述容置腔體之間的採樣腔體，其中，所述聚光腔體具有一第一反射結構以及一連接於所述第一反射結構的第二反射結構，其中，所述採樣腔體包括一連接於所述聚光腔體的第一採樣腔、一連接於所述容置腔體的第二採樣腔以及一連接於所述第一採樣腔與所 述第二採樣腔之間的轉折部，其中，所述轉折部上具有一反射面。所述發光模組設置於所述聚光腔體上，所述發光模組包括一發光單元，其中所述發光單元對應於所述聚光腔體。所述光感測模組包括一光感測單元，所述光感測單元設置於所述容置腔體中。 Another technical solution adopted by the present invention is to provide a gas measuring device comprising a cavity module, a light emitting module and a light sensing module. The cavity module includes a concentrating cavity, a accommodating cavity, and a sampling cavity connected between the concentrating cavity and the accommodating cavity, wherein the concentrating cavity Having a first reflective structure and a second reflective structure coupled to the first reflective structure, wherein the sampling cavity includes a first sampling cavity connected to the concentrating cavity, and a connection to the a second sampling cavity for accommodating the cavity and a first sampling cavity and a chamber a turning portion between the second sampling chambers, wherein the turning portion has a reflecting surface. The illuminating module is disposed on the concentrating cavity, and the illuminating module comprises a illuminating unit, wherein the illuminating unit corresponds to the concentrating cavity. The light sensing module includes a light sensing unit, and the light sensing unit is disposed in the receiving cavity.

本發明的其中一有益效果在於，本發明實施例所提供的氣體量測裝置，其能利用“所述聚光腔體具有一第一反射結構、一連接於所述第一反射結構的第二反射結構以及一連接於所述第一反射結構的第三反射結構，其中，所述第一反射結構設置於所述第二反射結構與所述第三反射結構之間”的技術方案，或是“所述採樣腔體包括一連接於所述聚光腔體的第一採樣腔、一連接於所述容置腔體的第二採樣腔以及一連接於所述第一採樣腔與所述第二採樣腔之間的轉折部，其中，所述轉折部上具有一反射面”的技術方案，而能提高腔體模組的集光性，同時也能將氣體量測裝置微型化。 One of the beneficial effects of the present invention is that the gas measuring device provided by the embodiment of the present invention can utilize the "the concentrating cavity has a first reflective structure and a second connected to the first reflective structure. a reflective structure and a third reflective structure connected to the first reflective structure, wherein the first reflective structure is disposed between the second reflective structure and the third reflective structure, or The sampling chamber includes a first sampling chamber connected to the concentrating cavity, a second sampling chamber connected to the accommodating cavity, and a first sampling chamber connected to the first sampling chamber. The turning portion between the two sampling chambers, wherein the turning portion has a reflecting surface", can improve the light collecting property of the cavity module, and can also miniaturize the gas measuring device.

為使能更進一步瞭解本發明的特徵及技術內容，請參閱以下有關本發明的詳細說明與附圖，然而所提供的附圖僅用於提供參考與說明用，並非用來對本發明加以限制。 For a better understanding of the features and technical aspects of the present invention, reference should be made to the accompanying drawings.

Q‧‧‧氣體量測裝置 Q‧‧‧Gas measuring device

1‧‧‧腔體模組 1‧‧‧ cavity module

1a‧‧‧上腔體模組 1a‧‧‧Upper cavity module

1b‧‧‧下腔體模組 1b‧‧‧ lower cavity module

11‧‧‧聚光腔體 11‧‧‧Concentrating cavity

111‧‧‧第一反射結構 111‧‧‧First reflection structure

112‧‧‧第二反射結構 112‧‧‧Second reflective structure

113‧‧‧第三反射結構 113‧‧‧ Third reflection structure

12‧‧‧容置腔體 12‧‧‧ accommodating cavity

13‧‧‧採樣腔體 13‧‧‧Sampling chamber

13a‧‧‧第一採樣腔 13a‧‧‧First sampling chamber

13b‧‧‧第二採樣腔 13b‧‧‧Second sampling chamber

13c‧‧‧轉折部 13c‧‧‧ Turning Department

13cs‧‧‧反射面 13cs‧‧‧reflecting surface

131‧‧‧第一開口 131‧‧‧First opening

132‧‧‧第二開口 132‧‧‧second opening

133‧‧‧內表面 133‧‧‧ inner surface

1331‧‧‧第一表面 1331‧‧‧ first surface

1332‧‧‧第二表面 1332‧‧‧ second surface

1333‧‧‧第三表面 1333‧‧‧ third surface

1334‧‧‧第四表面 1334‧‧‧ fourth surface

134‧‧‧氣體擴散槽 134‧‧‧ gas diffusion tank

14‧‧‧導光部 14‧‧‧Light Guide

141‧‧‧導光面 141‧‧‧Lighting surface

15‧‧‧開槽 15‧‧‧ slotting

16‧‧‧氣體過濾膜 16‧‧‧ gas filtration membrane

2‧‧‧發光模組 2‧‧‧Lighting module

21‧‧‧發光單元 21‧‧‧Lighting unit

22‧‧‧連接線 22‧‧‧Connecting line

3‧‧‧光感測模組 3‧‧‧Light sensing module

31‧‧‧光感測單元 31‧‧‧Light sensing unit

32‧‧‧連接線 32‧‧‧Connecting line

4‧‧‧基板模組 4‧‧‧Substrate module

E1‧‧‧第一焦點 E1‧‧‧ first focus

E2‧‧‧第二焦點 E2‧‧‧ second focus

O‧‧‧中心點 O‧‧‧ Center Point

F、U‧‧‧焦點 F, U‧‧ focus

T‧‧‧光線 T‧‧‧Light

T01‧‧‧投射光 T01‧‧‧Projected light

T02‧‧‧入射光 T02‧‧‧ incident light

T03‧‧‧接收光 T03‧‧‧ Receiving light

T011‧‧‧第一投射光 T011‧‧‧First projected light

T012‧‧‧第二投射光 T012‧‧‧second projected light

T031‧‧‧第一接收光 T031‧‧‧First Received Light

T032‧‧‧第二接收光 T032‧‧‧second received light

R1‧‧‧第一反射光 R1‧‧‧ first reflected light

R2‧‧‧第二反射光 R2‧‧‧second reflected light

R3‧‧‧第三反射光 R3‧‧‧ third reflected light

T11‧‧‧第一投射光線 T11‧‧‧first projected light

T12‧‧‧第一反射光線 T12‧‧‧First reflected light

T13‧‧‧第一接收光線 T13‧‧‧First Received Light

T21‧‧‧第二投射光線 T21‧‧‧second projected light

T22‧‧‧第二反射光線 T22‧‧‧second reflected light

T23‧‧‧第三反射光線 T23‧‧‧third reflected light

T24‧‧‧第二接收光線 T24‧‧‧second receiving light

T31‧‧‧第三投射光線 T31‧‧‧3rd projection light

T32‧‧‧第四反射光線 T32‧‧‧fourth reflected light

T33‧‧‧第三接收光線 T33‧‧‧ third receiving light

T41‧‧‧投射光線 T41‧‧‧Projected light

T42‧‧‧反射光線 T42‧‧‧ reflected light

T43‧‧‧接收光線 T43‧‧‧ Receiving light

L1‧‧‧第一預定距離 L1‧‧‧first predetermined distance

L2‧‧‧第二預定距離 L2‧‧‧second predetermined distance

L3‧‧‧第三預定距離 L3‧‧‧ third predetermined distance

L4‧‧‧第四預定距離 L4‧‧‧ fourth predetermined distance

H‧‧‧預定高度 H‧‧‧Predetermined height

WW‧‧‧預定寬度 WW‧‧‧Predetermined width

δ1‧‧‧第一角度 Δ1‧‧‧ first angle

δ2‧‧‧第二角度 Δ2‧‧‧second angle

δ3‧‧‧第三角度 Δ3‧‧‧ third angle

δ4‧‧‧第四角度 Δ4‧‧‧fourth angle

δ5‧‧‧第五角度 Δ5‧‧‧ fifth angle

θ‧‧‧預定角度 Θ‧‧‧predetermined angle

α‧‧‧投射角 Α‧‧‧projection angle

α₁‧‧‧第一投射角 α ₁ ‧‧‧first projection angle

α₂‧‧‧第二投射角 α ₂ ‧‧‧second projection angle

β‧‧‧接收角 Β‧‧‧ receiving angle

β₁‧‧‧第一接收角 β ₁ ‧‧‧first acceptance angle

β₂‧‧‧第二接收角 β ₂ ‧‧‧second acceptance angle

γ‧‧‧斜角 Γ‧‧‧bevel

γ₁‧‧‧第一斜角 γ ₁ ‧‧‧first bevel

γ₂‧‧‧第二斜角 γ ₂ ‧‧‧second bevel

λ‧‧‧入射角 Λ‧‧‧ incident angle

HH‧‧‧水平軸線 HH‧‧‧ horizontal axis

S‧‧‧採樣空間 S‧‧‧Sampling space

S1‧‧‧第一採樣空間 S1‧‧‧First sampling space

S2‧‧‧第二採樣空間 S2‧‧‧Second sampling space

K1,K2‧‧‧固定孔 K1, K2‧‧‧ fixing holes

E‧‧‧橢圓曲率曲面 E‧‧‧Elliptical curvature surface

C‧‧‧正圓曲率曲面 C‧‧‧Rounded Curvature Surface

P‧‧‧拋物線曲率曲面 P‧‧‧Parabolic curvature surface

A1‧‧‧第一軸線 A1‧‧‧first axis

A2‧‧‧第二軸線 A2‧‧‧second axis

C1‧‧‧第一中心軸 C1‧‧‧ first central axis

C2‧‧‧第二中心軸 C2‧‧‧Second central axis

圖1為本發明第一實施例氣體量測裝置的其中一立體組合示意圖。 1 is a schematic perspective view of one of the gas measuring devices of the first embodiment of the present invention.

圖2為本發明第一實施例氣體量測裝置的另外一立體組合示意圖。 2 is another schematic perspective view of the gas measuring device according to the first embodiment of the present invention.

圖3為本發明第一實施例氣體量測裝置的其中一立體分解示意圖。 3 is a perspective exploded view of the gas measuring device according to the first embodiment of the present invention.

圖4為本發明第一實施例氣體量測裝置的另外一立體分解示意圖。 4 is another perspective exploded view of the gas measuring device according to the first embodiment of the present invention.

圖5為圖1的V-V剖線的側視剖面示意圖。 Fig. 5 is a side cross-sectional view showing the line V-V of Fig. 1;

圖6為本發明第一實施例氣體量測裝置的第一反射結構所形 成的一光線投射示意圖。 6 is a view showing a first reflection structure of a gas measuring device according to a first embodiment of the present invention; A schematic diagram of a ray projection.

圖7為本發明第一實施例氣體量測裝置的第二反射結構所形成的一光線投射示意圖。 FIG. 7 is a schematic view showing a light projection formed by a second reflection structure of the gas measuring device according to the first embodiment of the present invention.

圖8為本發明第一實施例氣體量測裝置的第三反射結構所形成的一光線投射示意圖。 FIG. 8 is a schematic view showing a ray projection formed by a third reflection structure of the gas measuring device according to the first embodiment of the present invention.

圖9為本發明第一實施例氣體量測裝置的其中一光線投射示意圖。 Fig. 9 is a schematic view showing a light projection of the gas measuring device according to the first embodiment of the present invention.

圖10為本發明第一實施例氣體量測裝置的另外一光線投射示意圖。 Fig. 10 is a schematic view showing another ray projection of the gas measuring device according to the first embodiment of the present invention.

圖11為圖10的XI-XI部分的局部放大示意圖。 Fig. 11 is a partially enlarged schematic view showing the portion XI-XI of Fig. 10.

圖12為本發明第二實施例氣體量測裝置的其中一光線投射示意圖。 Figure 12 is a schematic view showing a light projection of a gas measuring device according to a second embodiment of the present invention.

圖13為本發明第二實施例氣體量測裝置的另外一光線投射示意圖。 Figure 13 is a schematic view showing another ray projection of the gas measuring device according to the second embodiment of the present invention.

圖14為本發明第二實施例氣體量測裝置的再一光線投射示意圖。 Figure 14 is a schematic view showing still another ray projection of the gas measuring device according to the second embodiment of the present invention.

圖15為本發明第三實施例氣體量測裝置的其中一立體組合示意圖。 Figure 15 is a perspective view showing a three-dimensional combination of a gas measuring device according to a third embodiment of the present invention.

圖16為本發明第三實施例氣體量測裝置的另外一立體組合示意圖。 Fig. 16 is a perspective view showing another three-dimensional combination of the gas measuring device according to the third embodiment of the present invention.

圖17為本發明第三實施例氣體量測裝置的其中一立體分解示意圖。 Figure 17 is a perspective exploded view of a gas measuring device according to a third embodiment of the present invention.

圖18為本發明第三實施例氣體量測裝置的另外一立體分解示意圖。 Figure 18 is another perspective exploded view of the gas measuring device according to the third embodiment of the present invention.

圖19為圖15的XIX-XIX剖線的側視剖面示意圖。 Figure 19 is a side cross-sectional view showing the line XIX-XIX of Figure 15;

圖20為本發明第三實施例氣體量測裝置的其中一光線投射示意圖。 Figure 20 is a schematic view showing a ray projection of a gas measuring device according to a third embodiment of the present invention.

圖21為本發明第三實施例氣體量測裝置的另外一光線投射示 意圖。 Figure 21 is a diagram showing another light projection of the gas measuring device according to the third embodiment of the present invention; intention.

圖22為本發明第三實施例氣體量測裝置的再一光線投射示意圖。 Figure 22 is a schematic view showing still another ray projection of the gas measuring device according to the third embodiment of the present invention.

圖23為圖15的XXIII-XXIII剖線的側視剖面示意圖。 Figure 23 is a side cross-sectional view showing the line XXIII-XXIII of Figure 15;

圖24為光線在第二採樣空間中的其中一光線投射示意圖。 Figure 24 is a schematic diagram showing one of the rays projected in the second sampling space.

圖25為光線在第二採樣空間中的另外一光線投射示意圖。 Figure 25 is a schematic illustration of another ray projection of light in a second sampling space.

圖26為光線在第二採樣空間中的再一光線投射示意圖。 Figure 26 is a schematic diagram of still another ray projection of light in the second sampling space.

圖27為本發明第三實施例中具有第三反射結構的氣體量測裝置的光線投射示意圖。 Figure 27 is a schematic view showing the ray projection of the gas measuring device having the third reflecting structure in the third embodiment of the present invention.

圖28為本發明第四實施例氣體量測裝置的立體組合示意圖。 Figure 28 is a perspective view showing a three-dimensional assembly of a gas measuring device according to a fourth embodiment of the present invention.

圖29為本發明第四實施例氣體量測裝置的立體分解示意圖。 Figure 29 is a perspective exploded view of a gas measuring device according to a fourth embodiment of the present invention.

圖30為本發明第四實施例氣體量測裝置的其中一內部結構示意圖。 Figure 30 is a schematic view showing one internal structure of a gas measuring device according to a fourth embodiment of the present invention.

圖31為本發明第四實施例氣體量測裝置的另外一內部結構示意圖。 Figure 31 is a schematic view showing another internal structure of a gas measuring device according to a fourth embodiment of the present invention.

圖32為本發明第五實施例氣體量測裝置的內部結構示意圖。 Figure 32 is a schematic view showing the internal structure of a gas measuring device according to a fifth embodiment of the present invention.

以下是通過特定的具體實例來說明本發明所公開有關“氣體量測裝置”的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用，本說明書中的各項細節也可基於不同觀點與應用，在不悖離本發明的精神下進行各種修飾與變更。另外，本發明的附圖僅為簡單示意說明，並非依實際尺寸的描繪，予以聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容，但所公開的內容並非用以限制本發明的技術範圍。 The following is a description of an embodiment of the present invention relating to a "gas measuring device" by a specific specific example, and those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in the present specification. The present invention may be carried out or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not intended to be construed in terms of actual dimensions. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the technical scope of the present invention.

應理解，雖然本文中可能使用術語第一、第二、第三等來描述各種元件或信號等，但這些元件或信號不應受這些術語限制。這些術語乃用以區分一元件與另一元件，或者一信號與另一信 號。另外，如本文中所使用，術語“或”視實際情況可能包括相關聯的列出項目中的任一個或者多個的所有組合。 It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements or signals, etc., these elements or signals are not limited by these terms. These terms are used to distinguish one element from another, or one signal and another. number. Also, as used herein, the term "or" may include all combinations of any one or more of the associated listed items.

[第一實施例] [First Embodiment]

首先，請參閱圖1至圖4所示，本發明第一實施例提供一種氣體量測裝置Q，其包括一腔體模組1、一發光模組2、一光感測模組3以及一基板模組4。發光模組2及光感測模組3可電性連接於基板模組4上，此外，基板模組4還可以與一顯示單元(圖中未示出)、一控制單元(圖中未示出)、及一處理單元(圖中未示出)電性連接。舉例來說，發光模組2可為產生紅外線光源的紅外線發光器，光感測模組3為紅外線光感測器，例如可為單通道紅外線光感測器，或者是雙通道紅外線光感測器(其中一個紅外線收集窗口可用來偵測氣體濃度，另外一個紅外線收集窗口可用來偵測紅外線光源是否老化的問題，且兼具有相互校正之功能)，但是本發明不以此為限。 First, the first embodiment of the present invention provides a gas measuring device Q, which includes a cavity module 1, a light emitting module 2, a light sensing module 3, and a Substrate module 4. The light-emitting module 2 and the light-sensing module 3 are electrically connected to the substrate module 4. The substrate module 4 can also be connected to a display unit (not shown) and a control unit (not shown). And a processing unit (not shown) is electrically connected. For example, the light-emitting module 2 can be an infrared light-emitting device that generates an infrared light source, and the light-sensing module 3 is an infrared light sensor, for example, a single-channel infrared light sensor, or a dual-channel infrared light sensor. One of the infrared collection windows can be used to detect the gas concentration, and the other infrared collection window can be used to detect the aging of the infrared light source, and has the function of mutual correction, but the invention is not limited thereto.

藉此，本發明實施例所提供的氣體量測裝置Q可以量測待檢測氣體的濃度或者是其他性質，附帶一提，待檢測氣體可以是二氧化碳、一氧化碳或二氧化碳及一氧化碳的組合，本發明不以待檢測氣體為限制。換句話說，可通過不同的發光模組2及光感測模組3而量測不同的待檢測氣體。舉例來說，以量測氣體濃度而言，可利用改變光感測模組3上的波長濾波器(濾波片)而量測不同的待檢測氣體。 Therefore, the gas measuring device Q provided by the embodiment of the present invention can measure the concentration of the gas to be detected or other properties. Incidentally, the gas to be detected may be a combination of carbon dioxide, carbon monoxide or carbon dioxide and carbon monoxide, and the present invention does not It is limited by the gas to be detected. In other words, different gases to be detected can be measured by different light-emitting modules 2 and light-sensing modules 3. For example, in terms of measuring the gas concentration, different wavelengths of the gas to be detected can be measured by changing the wavelength filter (filter) on the light sensing module 3.

接著，請一併參閱圖5至圖6所示，腔體模組1具有一採樣空間S，且腔體模組1包括一聚光腔體11、一容置腔體12及一連接於聚光腔體11及容置腔體12之間的採樣腔體13。發光模組2可包括一發光單元21，發光單元21可設置於聚光腔體11上且對應於聚光腔體11，以產生一投射至聚光腔體11的光線T，例如紅外線光線。光感測模組3可包括一光感測單元31，光感測單元31 可設置於容置腔體12中，以接收發光單元21所產生的光線T。 Then, as shown in FIG. 5 to FIG. 6 , the cavity module 1 has a sampling space S, and the cavity module 1 includes a concentrating cavity 11 , a receiving cavity 12 , and a connection The optical cavity 11 and the sampling cavity 13 between the accommodating cavities 12. The light emitting module 2 can include a light emitting unit 21, and the light emitting unit 21 can be disposed on the light collecting cavity 11 and corresponding to the light collecting cavity 11 to generate a light T, such as infrared light, which is projected to the collecting cavity 11. The light sensing module 3 can include a light sensing unit 31, and the light sensing unit 31 It can be disposed in the accommodating cavity 12 to receive the light T generated by the light emitting unit 21.

另外，如圖1至圖4所示，腔體模組1可由上腔體模組1a及下腔體模組1b所組成，以便於製造與組裝。舉例來說，上腔體模組1a及下腔體模組1b可利用鎖固件(圖中未示出)螺鎖於固定孔K1中，以結合上腔體模組1a及下腔體模組1b。腔體模組1也可以利用鎖固件(圖中未示出)螺鎖於固定孔K2中，以將腔體模組1固定於基板模組4上。附帶一提，基板模組4可為一印刷電路板(Printed Circuit Board，PCB)，發光模組2還可包括一連接線22，光感測模組3還可包括一連接線32。發光模組2的連接線22及光感測模組3的連接線32可通過焊接方式將發光單元21及光感測單元31穩固地固定於基板模組4上，以防止外力而造成接觸不良之情形產生。 In addition, as shown in FIG. 1 to FIG. 4, the cavity module 1 can be composed of an upper cavity module 1a and a lower cavity module 1b for manufacturing and assembly. For example, the upper cavity module 1a and the lower cavity module 1b can be screwed into the fixing hole K1 by using a locker (not shown) to combine the upper cavity module 1a and the lower cavity module. 1b. The cavity module 1 can also be screwed into the fixing hole K2 by a locking member (not shown) to fix the cavity module 1 to the substrate module 4. It is to be noted that the substrate module 4 can be a printed circuit board (PCB). The light module 2 can further include a connecting line 22, and the light sensing module 3 can further include a connecting line 32. The connecting line 22 of the light-emitting module 2 and the connecting line 32 of the light-sensing module 3 can firmly fix the light-emitting unit 21 and the light-sensing unit 31 to the substrate module 4 by welding to prevent external contact and cause poor contact. The situation arises.

接著，請同時參閱圖5所示，採樣腔體13可具有一矩形形狀，例如長方形，但是本發明不以此為限。採樣腔體13內表面133(採樣腔體13內部的各個表面)可設有一反射層(圖中未示出)，反射層可通過金屬電鍍方式或塑膠電鍍方式形成於採樣腔體13內，反射層可以由含金金屬、鎳金屬或者金金屬及鎳金屬的混合物所組成。藉此，矩形形狀的採樣腔體13就如同一矩形光學積分器，其工作原理是發光模組2所產生的光線T通過採樣腔體13內的反射層在採樣腔體13中來回反射，使得發光模組2所產生的光線T在採樣腔體13內進行光源強度的相互疊加，使得疊加起來的光線能夠均勻分佈。 Next, please refer to FIG. 5 at the same time, the sampling cavity 13 may have a rectangular shape, such as a rectangular shape, but the invention is not limited thereto. The inner surface 133 of the sampling cavity 13 (each surface inside the sampling cavity 13) may be provided with a reflective layer (not shown). The reflective layer may be formed in the sampling cavity 13 by metal plating or plastic plating. The layer may consist of a gold-containing metal, a nickel metal or a mixture of gold metal and nickel metal. Thereby, the rectangular shaped sampling cavity 13 is like a rectangular optical integrator, and the working principle is that the light T generated by the light emitting module 2 is reflected back and forth in the sampling cavity 13 through the reflective layer in the sampling cavity 13 so that The light rays T generated by the light-emitting module 2 are superimposed on each other in the sampling cavity 13 so that the superimposed light can be evenly distributed.

承上述，請復參閱圖1至圖5所示，採樣腔體13包括一第一開口131、一對應於第一開口131的第二開口132、一第一表面1331以及一對應於第一表面1331的第二表面1332。第一開口131連接於聚光腔體11，第二開口132連接於容置腔體12，第一表面1331以及第二表面1332設置於第一開口131與第二開口132之間。另外，第一表面1331與第二表面1332可相互面對。另外，採樣腔 體13還進一步包括一第三表面(圖中未標號)以及一對應於第三表面的第四表面(圖中未標號)，且第三表面與第四表面可相互面對。換句話說，第一表面1331以及第二表面1332分別為採樣腔體13的上表面及下表面，第三表面以及第四表面分別為採樣腔體13的左側表面及右側表面。 As shown in FIG. 1 to FIG. 5 , the sampling cavity 13 includes a first opening 131 , a second opening 132 corresponding to the first opening 131 , a first surface 1331 , and a first surface corresponding to the first surface The second surface 1332 of 1331. The first opening 131 is connected to the concentrating cavity 11 , and the second opening 132 is connected to the accommodating cavity 12 . The first surface 1331 and the second surface 1332 are disposed between the first opening 131 and the second opening 132 . In addition, the first surface 1331 and the second surface 1332 may face each other. In addition, the sampling chamber The body 13 further includes a third surface (not labeled in the drawing) and a fourth surface (not labeled) corresponding to the third surface, and the third surface and the fourth surface may face each other. In other words, the first surface 1331 and the second surface 1332 are respectively an upper surface and a lower surface of the sampling cavity 13, and the third surface and the fourth surface are respectively a left side surface and a right side surface of the sampling cavity 13.

承上述，請復參閱圖1至圖5所示，採樣腔體13還進一步設置有一個或多個垂直貫穿採樣腔體13第一表面1331或第二表面1332的氣體擴散槽134，氣體擴散槽134可設置於採樣腔體13的第一開口131及第二開口132之間。另外，氣體擴散槽134為長方形的形狀，以圖5來說，氣體擴散槽134的剖面形狀可呈一V字型的形狀，使得待檢測氣體通過白努利效應(Bernoulli's principle)，讓氣體流經V字型的形狀的氣體擴散槽134時，因著V字型形狀的氣體擴散槽134的口徑大小改變，而讓氣體流速變快，以使氣體擴散更為快速而讓測量時間縮短。進一步來說，腔體模組1還進一步包括一設置在氣體擴散槽134上的氣體過濾膜16，舉例來說，氣體過濾膜16可為一防水透氣膜，可避免待檢測氣體的懸浮微粒進入腔體模組1當中，而造成腔體模組1內部污染或影響量測精度。 Referring to the above, please refer to FIG. 1 to FIG. 5, the sampling cavity 13 is further provided with one or more gas diffusion grooves 134 vertically penetrating the first surface 1331 or the second surface 1332 of the sampling cavity 13, the gas diffusion groove. The 134 can be disposed between the first opening 131 and the second opening 132 of the sampling cavity 13 . In addition, the gas diffusion groove 134 has a rectangular shape. As shown in FIG. 5, the cross-sectional shape of the gas diffusion groove 134 may have a V-shaped shape, so that the gas to be detected passes the Bernoulli's principle, and the gas flow is allowed. When the V-shaped gas diffusion groove 134 is formed, the gas flow rate is increased by the V-shaped gas diffusion groove 134, so that the gas flow rate is increased faster, and the measurement time is shortened. Further, the cavity module 1 further includes a gas filter membrane 16 disposed on the gas diffusion tank 134. For example, the gas filter membrane 16 can be a waterproof gas permeable membrane to prevent the aerosol of the gas to be detected from entering. In the cavity module 1, the internal cavity of the cavity module 1 is polluted or the measurement accuracy is affected.

接著，請再參閱圖1、圖3及圖5所示，以本發明第一實施例而言，腔體模組1還進一步包括一設置於採樣腔體13及容置腔體12之間的導光部14，導光部14可具有一導光面141，以通過導光面141將發光單元21所產生的光線T反射至光感測單元31中。舉例來說，導光面141上可塗佈有前述反射層(圖中未示出)，或者是導光面141為一反射鏡，本發明不以此為限。另外，腔體模組1還可進一步包括一開槽15，開槽15可連接於導光部14及容置腔體12之間。藉以使得採樣腔體13的第二表面1332與光感測單元31之間彼此相距一預定高度H。藉此，發光單元21所產生的光線T能夠大致呈“L”形的方式由發光單元21投射至光感測單元31 上。須注意的是，在其他實施方式(如圖12至圖14所示的實施方式)中，也可以不設置有導光部14，而使得發光單元21所產生的光線T在通過第一表面1331及第二表面1332的反覆反射後而直接投射至光感測單元31中。 Referring to FIG. 1 , FIG. 3 and FIG. 5 , in the first embodiment of the present invention, the cavity module 1 further includes a cavity between the sampling cavity 13 and the receiving cavity 12 . The light guiding portion 14 and the light guiding portion 14 may have a light guiding surface 141 to reflect the light T generated by the light emitting unit 21 into the light sensing unit 31 through the light guiding surface 141. For example, the light guiding surface 141 may be coated with the foregoing reflective layer (not shown), or the light guiding surface 141 may be a mirror. The invention is not limited thereto. In addition, the cavity module 1 can further include a slot 15 , and the slot 15 can be connected between the light guiding portion 14 and the receiving cavity 12 . Thereby, the second surface 1332 of the sampling cavity 13 and the light sensing unit 31 are spaced apart from each other by a predetermined height H. Thereby, the light T generated by the light emitting unit 21 can be projected by the light emitting unit 21 to the light sensing unit 31 in a substantially "L" shape. on. It should be noted that in other embodiments (such as the embodiment shown in FIG. 12 to FIG. 14 ), the light guiding portion 14 may not be disposed, so that the light T generated by the light emitting unit 21 passes through the first surface 1331 . After the reverse reflection of the second surface 1332, it is directly projected into the light sensing unit 31.

接著，請同時參閱圖6至圖8所示，以下將進一步說明發光單元21所投射之光線T的路徑與腔體模組1之結構關係。詳細來說，聚光腔體11可具有一第一反射結構111、一連接於第一反射結構111的第二反射結構112以及一連接於第一反射結構111的第三反射結構113，且第一反射結構111可設置於第二反射結構112與第三反射結構113之間。舉例來說，第一反射結構111的曲率、第二反射結構112的曲率以及第三反射結構113的曲率三者互不相同。以本發明實施例而言，第一反射結構111可具有一橢圓曲率曲面E，第二反射結構112可具有一正圓曲率曲面C，第三反射結構113可具有一拋物線曲率曲面P。藉此，第一反射結構111具有一第一焦點E1及一對應於第一焦點E1的第二焦點E2，第二反射結構112具有一中心點O，第三反射結構113具有一焦點F。第一反射結構111的第一焦點E1、第二反射結構112的中心點O以及第三反射結構113的焦點F可彼此相對應設置。舉例來說，第一焦點E1、中心點O以及焦點F可彼此相互重疊，但是本發明不以此為限，在其他實施方式中，第一焦點E1、中心點O與焦點F可非常鄰近地設置。另外，發光單元21可對應於第一焦點E1、中心點O以及焦點F而設置。優選地，發光單元21可直接設置於第一焦點E1、中心點O及焦點F上。此外，第一反射結構111可直接連接於第二反射結構112，以形成一位於第一反射結構111與第二反射結構112之間的單一輪廓線(圖中未標號)。 Next, please refer to FIG. 6 to FIG. 8 at the same time, and the relationship between the path of the light T projected by the light-emitting unit 21 and the cavity module 1 will be further described below. In detail, the concentrating cavity 11 can have a first reflective structure 111, a second reflective structure 112 connected to the first reflective structure 111, and a third reflective structure 113 connected to the first reflective structure 111, and A reflective structure 111 may be disposed between the second reflective structure 112 and the third reflective structure 113. For example, the curvature of the first reflective structure 111, the curvature of the second reflective structure 112, and the curvature of the third reflective structure 113 are different from each other. In the embodiment of the present invention, the first reflective structure 111 may have an elliptical curvature surface E, the second reflective structure 112 may have a perfect circular curvature surface C, and the third reflective structure 113 may have a parabolic curvature surface P. Thereby, the first reflective structure 111 has a first focus E1 and a second focus E2 corresponding to the first focus E1, the second reflective structure 112 has a center point O, and the third reflective structure 113 has a focus F. The first focus E1 of the first reflective structure 111, the center point O of the second reflective structure 112, and the focus F of the third reflective structure 113 may be disposed corresponding to each other. For example, the first focus E1, the center point O, and the focus F may overlap each other, but the invention is not limited thereto. In other embodiments, the first focus E1, the center point O and the focus F may be very close to each other. Settings. In addition, the light emitting unit 21 may be disposed corresponding to the first focus E1, the center point O, and the focus F. Preferably, the light emitting unit 21 can be directly disposed on the first focus E1, the center point O, and the focus F. In addition, the first reflective structure 111 may be directly connected to the second reflective structure 112 to form a single outline (not labeled) between the first reflective structure 111 and the second reflective structure 112.

承上述，請復參閱圖6至圖8所示，發光模組2所產生的一光線T包括一投射於第一反射結構111的第一投射光線T11、一投射於第二反射結構112的第二投射光線T21以及一投射於第三 反射結構113的第三投射光線T31。發光單元21所產生的第一投射光線T11、第二投射光線T21及第三投射光線T31可分別通過第一反射結構111、第二反射結構112、第三反射結構113以及採樣腔體13的內表面133反射後，而分別形成投射到光感測模組3上且被光感測模組3所接收的第一接收光線T13、第二接收光線T24以及第三接收光線T33。 In the above, as shown in FIG. 6 to FIG. 8 , a light T generated by the light-emitting module 2 includes a first projected light T11 projected on the first reflective structure 111 and a second projected projected on the second reflective structure 112 . Two projected rays T21 and one projected in the third The third projected ray T31 of the reflective structure 113. The first projected light T11, the second projected light T21, and the third projected light T31 generated by the light emitting unit 21 can pass through the first reflective structure 111, the second reflective structure 112, the third reflective structure 113, and the sampling cavity 13, respectively. After the surface 133 is reflected, the first received light T13, the second received light T24, and the third received light T33 that are projected onto the light sensing module 3 and received by the light sensing module 3 are respectively formed.

承上述，如圖6所示，以下將先說明發光單元21投射在第一反射結構111上的光路徑。詳細來說，第一投射光線T11可通過第一反射結構111的反射，以形成一投射至第二焦點E2的第一反射光線T12，藉此，第一反射光線T12與採樣腔體13中的內表面133(以本發明實施例而言，採樣腔體13可以為矩形，且能由第一表面1331、第二表面1332、第三表面以及第四表面所組成，然而，在其他實施方式中，採樣腔體13的橫截面也可以為五邊形的橫截面，或者是六邊形的橫截面，即，採樣腔體13可以為具有多邊形形狀的橫截面)相互配合，可以形成一投射至光感測單元31上而被光感測單元31所接收的第一接收光線T13。換句話說，第一反射光線T12可通過採樣腔體13內的各個表面反覆反射而形成投射至光感測單元31的第一接收光線T13。以本發明第一實施例而言，第一反射光線T12可通過採樣腔體13的內表面以及導光部14的導光面141的反射而形成投射至光感測單元31的第一接收光線T13。 As described above, as shown in FIG. 6, the light path of the light-emitting unit 21 projected on the first reflection structure 111 will be described below. In detail, the first projected light T11 can be reflected by the first reflective structure 111 to form a first reflected light T12 projected to the second focus E2, whereby the first reflected light T12 and the sampling cavity 13 are Inner surface 133 (in the embodiment of the present invention, the sampling cavity 13 may be rectangular and can be composed of the first surface 1331, the second surface 1332, the third surface, and the fourth surface, however, in other embodiments The cross section of the sampling cavity 13 may also be a pentagonal cross section, or a hexagonal cross section, that is, the sampling cavity 13 may have a polygonal cross section to cooperate with each other to form a projection to The first received light ray T13 received by the light sensing unit 31 on the light sensing unit 31. In other words, the first reflected light T12 can be reflected by the respective surfaces in the sampling cavity 13 to form the first received light T13 projected to the light sensing unit 31. In the first embodiment of the present invention, the first reflected light T12 can form a first received light projected to the light sensing unit 31 through the inner surface of the sampling cavity 13 and the light guiding surface 141 of the light guiding portion 14 . T13.

承上述，請參閱圖7所示，以下將接著說明發光單元21投射在第二反射結構112上的光路徑。詳細來說，第二投射光線T21通過第二反射結構112的反射，以形成一投射至第一反射結構111的第二反射光線T22，第二反射光線T22通過第一反射結構111的反射，以形成一投射至第二焦點E2的第三反射光線T23，第三反射光線T23與採樣腔體13中的內表面相互配合，以形成一投射至光感測單元31上而被光感測單元31所接收的第二接收光線 T24。換句話說，第三反射光線T23可通過採樣腔體13中的內表面133反覆反射而形成投射至光感測單元31的第二接收光線T24。以本發明第一實施例而言，第三反射光線T23可通過採樣腔體13的內表面133以及導光部14的導光面141的反射而形成投射至光感測單元31的第二接收光線T24。須說明的是，原則上第二反射光線T22可通過第二反射結構112的中心點O及第一反射結構111的第一焦點E1，但是，為避免混淆，圖7中所顯示的第二反射光線T22，以未通過第一焦點E1的方式呈現。 In view of the above, please refer to FIG. 7, and the light path projected by the light-emitting unit 21 on the second reflective structure 112 will be described below. In detail, the second projected light T21 is reflected by the second reflective structure 112 to form a second reflected light T22 projected to the first reflective structure 111, and the second reflected light T22 is reflected by the first reflective structure 111 to Forming a third reflected light T23 projected to the second focus E2, the third reflected light T23 interacts with the inner surface of the sampling cavity 13 to form a projection onto the light sensing unit 31 and is coupled to the light sensing unit 31. Received second received light T24. In other words, the third reflected light T23 can be repeatedly reflected by the inner surface 133 in the sampling cavity 13 to form a second received light T24 projected to the light sensing unit 31. In the first embodiment of the present invention, the third reflected light T23 can be formed by the reflection of the inner surface 133 of the sampling cavity 13 and the light guiding surface 141 of the light guiding portion 14 to be projected to the second receiving of the light sensing unit 31. Light T24. It should be noted that, in principle, the second reflected light T22 can pass through the center point O of the second reflective structure 112 and the first focus E1 of the first reflective structure 111, but to avoid confusion, the second reflection shown in FIG. The light ray T22 is presented in such a manner that it does not pass through the first focus E1.

承上述，請參閱圖8所示，以下將接著說明發光單元21投射在第三反射結構113上的光路徑。詳細來說，第三投射光線T31通過第三反射結構113的反射，以形成一投射至光感測單元31上而被光感測單元31所接收的第三接收光線T33。以本發明第一實施例而言，第三投射光線T31通過第三反射結構113的反射可以先形成一第四反射光線T32，第四反射光線T32可通過導光部14的導光面141的反射而形成投射至光感測單元31的第三接收光線T33。 In view of the above, please refer to FIG. 8, and the light path projected by the light-emitting unit 21 on the third reflective structure 113 will be described below. In detail, the third projected light T31 is reflected by the third reflective structure 113 to form a third received light T33 that is projected onto the light sensing unit 31 and received by the light sensing unit 31. In the first embodiment of the present invention, the third reflected light T31 may first form a fourth reflected light T32 through the reflection of the third reflective structure 113, and the fourth reflected light T32 may pass through the light guiding surface 141 of the light guiding portion 14. The third received light ray T33 projected to the light sensing unit 31 is formed by reflection.

接著，請復參閱圖5所示，詳細來說，以本發明第一實施例來說，導光部14可連接於第二開口132及容置腔體12之間，導光部14的導光面141可相對於一水平軸線HH傾斜一介於30度至60度之間的預定角度θ，或者是導光部14的導光面141相對於光感測單元31的第一表面1331或第二表面1332傾斜一介於30度至60度之間的預定角度θ。換句話說，光感測單元31的第一表面1331或第二表面1332可與水平軸線HH相互平行。優選地，預定角度θ可以為45度。另外，優選地，開槽15可連接於導光部14及容置腔體12之間。以圖5而言，開槽15具有一預定寬度W，鄰近於第二開口132的第二表面1332及光感測單元31之間具有一預定高度H，預定寬度W及預定高度H符合下列公式：(0.8*W)≦H≦(3*W)，其中H為預定高度H，W為預定寬度W。 Referring to FIG. 5, in detail, in the first embodiment of the present invention, the light guiding portion 14 can be connected between the second opening 132 and the accommodating cavity 12, and the guiding portion of the light guiding portion 14 The light surface 141 can be inclined by a predetermined angle θ between 30 degrees and 60 degrees with respect to a horizontal axis HH, or the first light surface 141 of the light guiding portion 14 relative to the first surface 1331 or the first of the light sensing unit 31 The two surfaces 1332 are inclined by a predetermined angle θ between 30 degrees and 60 degrees. In other words, the first surface 1331 or the second surface 1332 of the light sensing unit 31 may be parallel to the horizontal axis HH. Preferably, the predetermined angle θ may be 45 degrees. In addition, preferably, the slot 15 is connectable between the light guiding portion 14 and the receiving cavity 12. As shown in FIG. 5, the slot 15 has a predetermined width W, and the second surface 1332 adjacent to the second opening 132 and the light sensing unit 31 have a predetermined height H therebetween. The predetermined width W and the predetermined height H satisfy the following formula. :(0.8*W)≦H≦(3*W), where H is a predetermined height H and W is a predetermined width W.

進一步地，請一併參閱圖5及圖9至圖11所示，鄰近於第一開口131的第一表面1331及第二表面1332之間具有可一第一預定距離L1，鄰近於第二開口132的第一表面1331及第二表面1332之間具有一第二預定距離L2。以本發明實施例來說，為了改變第一反射光線T12或是第三反射光線T23投射在光感測單元31上的角度，第一預定距離L1及第二預定距離L2可以不同。優選地，第二預定距離L2大於第一預定距離L1。藉此，第一開口131的截面積可小於第二開口132的截面積。再者，預定高度H及第二預定距離L2可符合下列公式：(0.8*L2)≦H≦(3*L2)，其中H為預定高度H，L2為第二預定距離L2。換句話說，預定寬度W可以等於第二預定距離L2。 Further, as shown in FIG. 5 and FIG. 9 to FIG. 11 , the first surface 1331 and the second surface 1332 adjacent to the first opening 131 have a first predetermined distance L1 adjacent to the second opening. A first predetermined distance L2 is formed between the first surface 1331 and the second surface 1332 of 132. In the embodiment of the present invention, in order to change the angle at which the first reflected light T12 or the third reflected light T23 is projected on the light sensing unit 31, the first predetermined distance L1 and the second predetermined distance L2 may be different. Preferably, the second predetermined distance L2 is greater than the first predetermined distance L1. Thereby, the cross-sectional area of the first opening 131 can be smaller than the cross-sectional area of the second opening 132. Furthermore, the predetermined height H and the second predetermined distance L2 may conform to the following formula: (0.8*L2) ≦H ≦ (3*L2), where H is a predetermined height H and L2 is a second predetermined distance L2. In other words, the predetermined width W may be equal to the second predetermined distance L2.

另外，舉例來說，以本發明第一實施例而言，矩形採樣腔體13的橫截面積優選可大於或等於光感測單元31的感測面積。再者，由於目前雙通道紅外線光感測器的尺寸大約為4毫米(millimeter，mm)*2毫米(mm)，因此第二預定距離L2可以為2.1毫米(mm)，而預定寬度W也可以等於第二預定距離L2的尺寸，但是本發明不以此為限，在其他實施方式中，預定寬度W的尺寸大小也可以介於(1.1*L2)至(2.3*L2)之間的距離。預定高度H可以介於1毫米(mm)至2毫米(mm)之間，更優選地，可以為1.5毫米(mm)，但是本發明不以此為限。 In addition, for example, in the first embodiment of the present invention, the cross-sectional area of the rectangular sampling cavity 13 may preferably be greater than or equal to the sensing area of the photo sensing unit 31. Furthermore, since the size of the current two-channel infrared light sensor is approximately 4 millimeters (millimeter, mm) * 2 millimeters (mm), the second predetermined distance L2 may be 2.1 millimeters (mm), and the predetermined width W may also be The size is equal to the second predetermined distance L2, but the invention is not limited thereto. In other embodiments, the size of the predetermined width W may also be a distance between (1.1*L2) and (2.3*L2). The predetermined height H may be between 1 millimeter (mm) and 2 millimeters (mm), and more preferably may be 1.5 millimeters (mm), but the invention is not limited thereto.

接著，請復參閱圖9至圖11所示，圖9為第一表面1331與第二表面1332兩者呈平行設置的實施方式，即，第二預定距離L2的尺寸等於第一預定距離L1的尺寸且第一開口131的截面積等於第二開口132的截面積。圖10為第一表面1331與第二表面1332兩者呈非平行設置的實施方式，即，第一預定距離L1及第二預定距離L2兩者不同，或者是第一開口131的截面積小於第二開口132的截面積。以下將說明這兩種實施方式對光路徑之影響。 Next, referring to FIG. 9 to FIG. 11, FIG. 9 is an embodiment in which the first surface 1331 and the second surface 1332 are disposed in parallel, that is, the size of the second predetermined distance L2 is equal to the first predetermined distance L1. The cross-sectional area of the first opening 131 is equal to the cross-sectional area of the second opening 132. 10 is an embodiment in which the first surface 1331 and the second surface 1332 are disposed in a non-parallel manner, that is, the first predetermined distance L1 and the second predetermined distance L2 are different, or the cross-sectional area of the first opening 131 is smaller than the first The cross-sectional area of the two openings 132. The effect of these two implementations on the optical path will be explained below.

詳細來說，請復參閱圖9所示，發光模組2可具有一第一中 心軸C1，第一中心軸C1可穿過發光單元21的光源中心點(圖中未示出)。光感測模組3可具有一第二中心軸C2，第二中心軸C2可穿過光感測模組3中用來接收光源的中心點。以本發明第一實施例而言，第一中心軸C1與第二中心軸C2相互垂直，然而，在其他實施方式中並不以此為限。 In detail, please refer to FIG. 9 , the light-emitting module 2 can have a first middle The mandrel C1, the first central axis C1 can pass through the center point of the light source of the light emitting unit 21 (not shown). The light sensing module 3 can have a second central axis C2 that can pass through a center point of the light sensing module 3 for receiving the light source. In the first embodiment of the present invention, the first central axis C1 and the second central axis C2 are perpendicular to each other, however, it is not limited thereto in other embodiments.

進一步來說，請復參閱圖9所示，以下以導光面141的預定角度θ為45度進行說明，同時，以下內容僅為說明第一開口131的截面積等於第二開口132的截面積或第一開口131的截面積小於第二開口132的截面積兩者之間的差異性，並不特別針對第一投射光線T11、第二投射光線T21及第三投射光線T31進行說明。也就是說，通過截面積大小之選擇，可以對第一接收光線T13、第二接收光線T24及第三接收光線T33產生影響。 Further, please refer to FIG. 9 below. The following description will be made with the predetermined angle θ of the light guiding surface 141 being 45 degrees. Meanwhile, the following is only to explain that the cross-sectional area of the first opening 131 is equal to the cross-sectional area of the second opening 132. Or the difference between the cross-sectional area of the first opening 131 and the cross-sectional area of the second opening 132 is not specifically described for the first projected light T11, the second projected light T21, and the third projected light T31. That is to say, by the selection of the size of the cross-sectional area, the first received light T13, the second received light T24, and the third received light T33 can be affected.

詳細來說，如圖9所示，光線T可包括一投射於第一表面1331的投射光T01，投射光T01通過第一表面1331以及第二表面1332的反射，以形成一投射至導光面141上的入射光T02，入射光T02通過導光面141的反射，以形成一投射至光感測模組3上而被光感測模組3所接收的接收光T03。投射光T01與第一中心軸C1之間具有一投射角α，接收光T03與第二中心軸C2之間具有一接收角β，入射光T02與第一中心軸C1之間具有一入射角λ。以圖9的實施例而言，投射光T01與第一中心軸C1之間的投射角α會等於入射光T02與第一中心軸C1之間的入射角λ。接著，入射光T02通過45度的導光面141的反射後，可以形成投射至光感測模組3上而被光感測模組3所接收的接收光T03。而接收光T03與第二中心軸C2之間的接收角β，會因為第一表面1331與第二表面1332相互平行且導光面141為45度，而使得入射角λ與投射角α相同，且接收角β也會與投射角α相同。 In detail, as shown in FIG. 9, the light ray T may include a projection light T01 projected on the first surface 1331, and the projection light T01 is reflected by the first surface 1331 and the second surface 1332 to form a projection surface. The incident light T02 on the 141, the incident light T02 is reflected by the light guiding surface 141 to form a received light T03 that is projected onto the light sensing module 3 and received by the light sensing module 3. The projection light T01 has a projection angle α between the first central axis C1, a receiving angle β between the received light T03 and the second central axis C2, and an incident angle λ between the incident light T02 and the first central axis C1. . In the embodiment of Fig. 9, the projection angle α between the projection light T01 and the first central axis C1 is equal to the incident angle λ between the incident light T02 and the first central axis C1. Then, after the incident light T02 is reflected by the 45-degree light guiding surface 141, the received light T03 that is projected onto the light sensing module 3 and received by the light sensing module 3 can be formed. The receiving angle β between the received light T03 and the second central axis C2 may be such that the incident angle λ is the same as the projection angle α because the first surface 1331 and the second surface 1332 are parallel to each other and the light guiding surface 141 is 45 degrees. And the reception angle β is also the same as the projection angle α.

接著，請參閱圖10及圖11所示，以下將進一步說明第一預定距離L1及第二預定距離L2兩者不同，且第二預定距離L2大於 第一預定距離L1的實施方式，即，第一表面1331與第二表面1332呈非平行設置。以本發明實施例而言，投射光T01在第一表面1331以及第二表面1332之間反射N次。在第一表面1331與水平軸線HH之間以及在第二表面1332與水平軸線HH之間分別具有一斜角γ。另外，投射光T01可通過第一表面1331以及第二表面1332的反射，可形成M個在第一表面1331與第二表面1332之間反射的反射光線(例如：第一反射光R1、第二反射光R2、第三反射光R3)，第M個反射光線與第一中心軸C1之間的夾角小於第M-1個反射光線與第一中心軸C1之間的夾角。換句話說，由於第一表面1331與第二表面1332都與第一中心軸C1之間呈一斜角γ，因此，後一個反射光線與第一中心軸C1之間的夾角會小於前一個反射光線與第一中心軸C1的夾角。藉此，相較於第一預定距離L1及第二預定距離L2兩者相同的情況下，在第二預定距離L2大於第一預定距離L1的情況下，光感測模組3可以進一步接收到更多紅外線光。 Next, referring to FIG. 10 and FIG. 11 , the following description will further explain that the first predetermined distance L1 and the second predetermined distance L2 are different, and the second predetermined distance L2 is greater than The first predetermined distance L1 is an embodiment in which the first surface 1331 and the second surface 1332 are disposed in non-parallel. In the embodiment of the present invention, the projection light T01 is reflected N times between the first surface 1331 and the second surface 1332. There is an oblique angle γ between the first surface 1331 and the horizontal axis HH and between the second surface 1332 and the horizontal axis HH, respectively. In addition, the projection light T01 can form reflected light rays reflected between the first surface 1331 and the second surface 1332 through the reflection of the first surface 1331 and the second surface 1332 (for example, the first reflected light R1, the second The angle between the reflected light R2 and the third reflected light R3), the Mth reflected light and the first central axis C1 is smaller than the angle between the M-1th reflected light and the first central axis C1. In other words, since the first surface 1331 and the second surface 1332 both have an oblique angle γ with the first central axis C1, the angle between the latter reflected light and the first central axis C1 is smaller than the previous reflection. The angle between the light and the first central axis C1. Thereby, in a case where the first predetermined distance L1 and the second predetermined distance L2 are the same, the light sensing module 3 can further receive the second predetermined distance L2 when the second predetermined distance L2 is greater than the first predetermined distance L1. More infrared light.

舉例來說，如圖10及11所示，以下以導光面141的預定角度θ為45度、斜角γ為0.5度、投射角α為20度進行說明。詳細來說，光線T包括一投射於第一表面1331的投射光T01，投射光T01通過第一表面1331以及第二表面1332的反射，以形成一投射至導光面141上的入射光T02，入射光T02通過導光面141的反射，以形成一投射至光感測模組3上而被光感測模組3所接收的接收光T03。藉此，通過第一表面1331及第二表面1332的反射後，入射光T02與第一中心軸C1之間可具有一為16度的入射角λ。具有16度入射角λ的入射光T02通過45度的導光面141的反射後，可形成一具有16度接收角β的接收光T03。另外，須說明的是，本發明不以投射角20度為臨界值，20度僅為舉例，在其他實施方式中，不同的光感測單元31可以有不同於20度的較佳入射角。須說明的是，實際的角度計算方式容後說明。 For example, as shown in FIGS. 10 and 11, the predetermined angle θ of the light guiding surface 141 is 45 degrees, the oblique angle γ is 0.5 degrees, and the projection angle α is 20 degrees. In detail, the light T includes a projection light T01 projected on the first surface 1331, and the projection light T01 is reflected by the first surface 1331 and the second surface 1332 to form an incident light T02 projected onto the light guiding surface 141. The incident light T02 is reflected by the light guiding surface 141 to form a receiving light T03 that is projected onto the light sensing module 3 and received by the light sensing module 3. Thereby, after the reflection of the first surface 1331 and the second surface 1332, the incident light T02 and the first central axis C1 may have an incident angle λ of 16 degrees. After the incident light T02 having the incident angle λ of 16 degrees is reflected by the 45-degree light guiding surface 141, the received light T03 having the receiving angle β of 16 degrees can be formed. In addition, it should be noted that the present invention does not use a projection angle of 20 degrees as a critical value, and 20 degrees is merely an example. In other embodiments, different light sensing units 31 may have a better incident angle different from 20 degrees. It should be noted that the actual angle calculation method is explained later.

[第二實施例] [Second embodiment]

首先，請參閱圖12及圖13所示，由圖12與圖9的比較可知，第二實施例與第一實施例最大的差別在於：第二實施例所提供的腔體模組1可不具有導光部14及開槽15，而是直接將發光單元21所產生的光線T投射至光感測單元31上。換句話說，發光模組2可具有一第一中心軸C1，第一中心軸C1可穿過發光單元21的光源中心點(圖中未示出)。光感測模組3可具有一第二中心軸C2，第二中心軸C2可穿過光感測模組3中用來接收光源的中心點。值得說明的是，以本發明第二實施例而言，第一中心軸C1與第二中心軸C2相互平行且共軸，然而，本發明不以此為限。另外，須說明的是，第二實施例所提供的氣體量測裝置Q的其他結構與前述實施例相仿，在此不再贅述。 First, referring to FIG. 12 and FIG. 13 , it can be seen from the comparison between FIG. 12 and FIG. 9 that the maximum difference between the second embodiment and the first embodiment is that the cavity module 1 provided in the second embodiment may not have The light guiding portion 14 and the slit 15 directly project the light T generated by the light emitting unit 21 onto the light sensing unit 31. In other words, the light-emitting module 2 can have a first central axis C1, and the first central axis C1 can pass through a light source center point (not shown) of the light-emitting unit 21. The light sensing module 3 can have a second central axis C2 that can pass through a center point of the light sensing module 3 for receiving the light source. It should be noted that, in the second embodiment of the present invention, the first central axis C1 and the second central axis C2 are parallel and coaxial with each other, however, the invention is not limited thereto. In addition, it should be noted that other structures of the gas measuring device Q provided in the second embodiment are similar to those of the foregoing embodiment, and are not described herein again.

另外，圖12為第一表面1331與第二表面1332兩者呈平行設置的實施方式，即，第二預定距離L2的尺寸等於第一預定距離L1的尺寸且第一開口131的截面積等於第二開口132的截面積。圖13為第一表面1331與第二表面1332兩者呈非平行設置的實施方式，即，第一預定距離L1及第二預定距離L2兩者不同。以下將說明這兩種實施方式對光路徑之影響。 In addition, FIG. 12 is an embodiment in which the first surface 1331 and the second surface 1332 are disposed in parallel, that is, the size of the second predetermined distance L2 is equal to the size of the first predetermined distance L1 and the cross-sectional area of the first opening 131 is equal to The cross-sectional area of the two openings 132. FIG. 13 is an embodiment in which the first surface 1331 and the second surface 1332 are disposed in non-parallel, that is, the first predetermined distance L1 and the second predetermined distance L2 are different. The effect of these two implementations on the optical path will be explained below.

承上述，如圖12所示，投射光T01與第一中心軸C1之間具有一投射角α，接收光T03與第二中心軸C2之間具有一接收角β。須說明的是，由於第一預定距離L1及第二預定距離L2兩者相同，即，採樣腔體13的第一表面1331平行於第二表面1332，所以，基於反射定律，當投射角α的角度為20度時，接收角β的角度也仍為20度。 As described above, as shown in FIG. 12, the projection light T01 has a projection angle α between the first central axis C1 and a reception angle β between the reception light T03 and the second central axis C2. It should be noted that since the first predetermined distance L1 and the second predetermined distance L2 are the same, that is, the first surface 1331 of the sampling cavity 13 is parallel to the second surface 1332, based on the law of reflection, when the projection angle α is When the angle is 20 degrees, the angle of the reception angle β is still 20 degrees.

承上述，如圖13所示，靠近光感測模組3的第二開口132的第二預定距離L2的尺寸大於靠近發光模組2的第一開口131的第一預定距離L1的尺寸。詳細來說，光線T同樣也包括一投射於所 述第一表面1331的投射光T01(或稱：第一投射光T011)以及被光感測模組3所接收的接收光T03(或稱：第一接收光T031)。投射光T01與第一中心軸C1之間具有一投射角α(或稱：第一投射角α₁)，接收光T03與第二中心軸C2之間具有一接收角β(或稱：第一接收角β₁)。值得說明的是，以本發明實施例而言，第一中心軸C1可平行於一水平軸線HH。 As described above, as shown in FIG. 13, the second predetermined distance L2 of the second opening 132 adjacent to the light sensing module 3 is larger than the first predetermined distance L1 of the first opening 131 of the light emitting module 2. In detail, the light T also includes a projection light T01 (or: first projection light T011) projected on the first surface 1331 and a received light T03 received by the light sensing module 3 (or: First received light T031). The projection light T01 has a projection angle α (or a first projection angle α ₁ ) between the first central axis C1, and a reception angle β between the received light T03 and the second central axis C2 (or: first Receiving angle β ₁ ). It should be noted that, in the embodiment of the present invention, the first central axis C1 may be parallel to a horizontal axis HH.

承上述，請復參閱圖13所示，以本發明實施例而言，投射光T01在第一表面1331以及第二表面1332之間反射N次。在第一表面1331與水平軸線HH之間以及在第二表面1332與水平軸線HH之間分別具有一斜角γ。接收光T03與第二中心軸C2之間的接收角β符合下列關係式：β=α-2γN，其中α為投射角的角度，β為接收角的角度，γ為斜角的角度，N為反射次數。須說明的是，以本發明實施而言，斜角γ可介於0.1度至5度之間，優選為介於0.3度至3度之間，更優選為0.5度，但是本發明不以此為限。 As described above, referring to FIG. 13, in the embodiment of the present invention, the projection light T01 is reflected N times between the first surface 1331 and the second surface 1332. There is an oblique angle γ between the first surface 1331 and the horizontal axis HH and between the second surface 1332 and the horizontal axis HH, respectively. The reception angle β between the received light T03 and the second central axis C2 conforms to the following relationship: β=α-2γN, where α is the angle of the projection angle, β is the angle of the reception angle, and γ is the angle of the oblique angle, N is The number of reflections. It should be noted that, in the practice of the present invention, the oblique angle γ may be between 0.1 degrees and 5 degrees, preferably between 0.3 degrees and 3 degrees, more preferably 0.5 degrees, but the present invention does not Limited.

另外，投射光T01通過第一表面1331以及第二表面1332的反射，可形成M個在第一表面1331與第二表面1332之間反射的反射光線(例如：第一反射光R1、第二反射光R2、第三反射光R3)，第M個反射光線與第一中心軸C1之間的夾角小於第M-1個反射光線與第一中心軸C1之間的夾角。換句話說，由於第一表面1331與第二表面1332都與第一中心軸C1之間呈一斜角γ，因此，後一個反射光線與第一中心軸C1之間的夾角會小於前一個反射光線與第一中心軸C1的夾角。 In addition, the reflected light T01 is reflected by the first surface 1331 and the second surface 1332 to form M reflected rays that are reflected between the first surface 1331 and the second surface 1332 (for example, the first reflected light R1 and the second reflected The angle between the Mth reflected light and the first central axis C1 is smaller than the angle between the M-1th reflected light and the first central axis C1. In other words, since the first surface 1331 and the second surface 1332 both have an oblique angle γ with the first central axis C1, the angle between the latter reflected light and the first central axis C1 is smaller than the previous reflection. The angle between the light and the first central axis C1.

以下以一實際例子進行說明，假設投射光T01與第一中心軸C1之間的投射角α的角度為20度，斜角γ為0.5度，則投射光T01與第一表面1331之間可具有一角度為19.5度的第一角度δ1。投射光T01通過第一表面1331的反射後，可形成一投射至第二表面1332的第一反射光R1。基於反射定律，第一反射光R1與第一表面1331之間同樣具有一角度為19.5度的第二角度δ2，而第一 反射光R1與第一中心軸C1之間則具有一角度為19度的第三角度δ3。第一反射光R1通過第二表面1332的反射後，可形成一投射至第一表面1331的第二反射光R2。第二反射光R2與第一中心軸C1之間具有一角度為18度的第四角度δ4。第二反射光R2通過第一表面1331的反射後，可形成一投射至第二表面1332的第三反射光R3。第三反射光R3與第一中心軸C1之間可具有一角度為17度的第五角度δ5。第三反射光R3通過第二表面1332的反射後，可形成一投射至光感測模組3而被光感測模組3所接收的接收光T03。接收光T03與第一中心軸C1之間具有一角度為16度的接收角β。 Hereinafter, a practical example will be described. Assuming that the angle of the projection angle α between the projection light T01 and the first central axis C1 is 20 degrees and the oblique angle γ is 0.5 degrees, the projection light T01 and the first surface 1331 may have The first angle δ1 at an angle of 19.5 degrees. After the projection light T01 is reflected by the first surface 1331, a first reflected light R1 projected onto the second surface 1332 can be formed. Based on the law of reflection, the first reflected light R1 and the first surface 1331 also have a second angle δ2 with an angle of 19.5 degrees, and the first The reflected light R1 and the first central axis C1 have a third angle δ3 of an angle of 19 degrees. After the first reflected light R1 is reflected by the second surface 1332, a second reflected light R2 projected onto the first surface 1331 can be formed. The second reflected light R2 and the first central axis C1 have a fourth angle δ4 at an angle of 18 degrees. After the second reflected light R2 is reflected by the first surface 1331, a third reflected light R3 projected to the second surface 1332 can be formed. The third reflected light R3 and the first central axis C1 may have a fifth angle δ5 at an angle of 17 degrees. After the third reflected light R3 is reflected by the second surface 1332, a received light T03 that is projected to the light sensing module 3 and received by the light sensing module 3 can be formed. The reception light T03 has a reception angle β of an angle of 16 degrees with the first central axis C1.

值得一提的是，以本發明第一實施例而言，第一中心軸C1與第二中心軸C2共軸，因此，接收光T03與第二中心軸C2之間也具有一角度為16度的接收角β。另外，投射光T01通過第一表面1331及第二表面1332的反射次數共為4次(即，碰到第一表面1331及第二表面1332的總次數)。換句話說，若是通過上述關係式：β=α-2γN的計算之後，可以得到接收角β為20度-(2*0.5*4)度，可得到接收角β為16度。再者，第二反射光R2與第一中心軸C1之間的夾角，也會小於第一反射光R1與第一中心軸C1之間的夾角。 It should be noted that, in the first embodiment of the present invention, the first central axis C1 is coaxial with the second central axis C2, and therefore, the received light T03 and the second central axis C2 also have an angle of 16 degrees. The acceptance angle β. In addition, the number of times the projection light T01 passes through the first surface 1331 and the second surface 1332 is four times (that is, the total number of times the first surface 1331 and the second surface 1332 are hit). In other words, if the above relational expression: β = α - 2 γN is calculated, the reception angle β can be obtained as 20 degrees - (2 * 0.5 * 4) degrees, and the reception angle β can be obtained as 16 degrees. Furthermore, the angle between the second reflected light R2 and the first central axis C1 is also smaller than the angle between the first reflected light R1 and the first central axis C1.

須說明的是，相較於第一預定距離L1及第二預定距離L2兩者相同的情況下，在第二預定距離L2大於第一預定距離L1的情況下，光感測單元31可以進一步接收到更多紅外線光。換句話說，接收光T03較佳為垂直進入光感測單元31為佳。另外，須說明的是，投射角α為20度僅為舉例，本發明不以此為限。換句話說，不同的光感測模組3具有不同的較佳接收角β。另外，值得一提的是，以本發明實施例而言，第一開口131至第二開口132之間的距離(即，採樣腔體13的長度)可以為35毫米(millimeter，mm)至50毫米(mm)之間，但是本發明不以此為限。 It should be noted that, in the case that both the first predetermined distance L1 and the second predetermined distance L2 are the same, in a case where the second predetermined distance L2 is greater than the first predetermined distance L1, the light sensing unit 31 may further receive To more infrared light. In other words, it is preferable that the received light T03 is vertically entered into the light sensing unit 31. In addition, it should be noted that the projection angle α is 20 degrees, which is only an example, and the invention is not limited thereto. In other words, the different light sensing modules 3 have different preferred receiving angles β. In addition, it is worth mentioning that, in the embodiment of the present invention, the distance between the first opening 131 to the second opening 132 (ie, the length of the sampling cavity 13) may be 35 mm (millimeter, mm) to 50. Between millimeters (mm), but the invention is not limited thereto.

接著，請參閱圖14所示，以下將說明當第三表面1333及第四表面1334分別與第一中心軸C1傾斜一角度的實施方式，即，第三表面1333與第四表面1334呈非平行設置。另外，需說明的是，第三表面1333以及第四表面1334分別為採樣腔體13的左側表面及右側表面。詳細而言，第一開口131的第三表面1333與第四表面1334之間具有一第三預定距離L3，第二開口132的第三表面1333與第四表面1334之間具有一第四預定距離L4，第四預定距離L4大於第三預定距離L3。 Next, referring to FIG. 14, an embodiment in which the third surface 1333 and the fourth surface 1334 are respectively inclined at an angle to the first central axis C1, that is, the third surface 1333 and the fourth surface 1334 are non-parallel, will be described below. Settings. In addition, it should be noted that the third surface 1333 and the fourth surface 1334 are respectively a left side surface and a right side surface of the sampling cavity 13 . In detail, the third surface 1333 of the first opening 131 and the fourth surface 1334 have a third predetermined distance L3, and the third surface 1333 of the second opening 132 has a fourth predetermined distance between the third surface 1333 and the fourth surface 1334. L4, the fourth predetermined distance L4 is greater than the third predetermined distance L3.

承上述，請配合前述段落對圖13的說明，並請同時復參閱圖14所示，光線T包括一投射於第一表面1331的第一投射光T011以及投射於第三表面1333的第二投射光T012。第一投射光T011通過第一表面1331以及第二表面1332的反射，以形成一投射至光感測模組3上而被光感測模組3所接收的第一接收光T031。第二投射光T012通過第三表面1333以及第四表面1334的反射，以形成一投射至光感測模組3上而被光感測模組3所接收的第二接收光T032。發光模組2具有一第一中心軸C1，第一投射光T011與第一中心軸C1之間具有一第一投射角α₁。第二投射光T012與第一中心軸C1之間具有一第二投射角α₂。光感測模組3具有一第二中心軸C2，第一接收光T031與第二中心軸C2之間具有一第一接收角β₁。第二接收光T032與第二中心軸C2之間具有一第二接收角β₂。 In view of the above, please refer to the description of FIG. 13 in the foregoing paragraphs, and please refer to FIG. 14 at the same time, the light ray T includes a first projection light T011 projected on the first surface 1331 and a second projection projected on the third surface 1333. Light T012. The first projection light T011 is reflected by the first surface 1331 and the second surface 1332 to form a first received light T031 that is projected onto the light sensing module 3 and received by the light sensing module 3. The second projection light T012 is reflected by the third surface 1333 and the fourth surface 1334 to form a second received light T032 that is projected onto the light sensing module 3 and received by the light sensing module 3. The light-emitting module 2 has a first central axis C1, and a first projection angle α _{1 is formed} between the first projection light T011 and the first central axis C1. The second projection light T012 has a second projection angle α ₂ between the first central axis C1 and the first central axis C1. The light sensing module 3 has a second central axis C2, and the first receiving light T031 and the second central axis C2 have a first receiving angle β ₁ . The second receiving light T032 has a second receiving angle β ₂ between the second central axis C2 and the second central axis C2.

接著，第一投射光T011在第一表面1331以及第二表面1332之間反射N₁次，第二投射光T012在第三表面1333以及第四表面1334之間反射N₂次，第一中心軸C1及第二中心軸C2都平行於一水平軸線HH。在第一表面1331與水平軸線HH之間以及在第二表面1332與水平軸線HH之間分別具有一第一斜角γ₁。在第三表面1333與水平軸線HH之間以及在第四表面1334與水平軸線HH之間分別具有一第二斜角γ₂。第一接收光T031與第二中心軸 C2之間的第一接收角β₁符合下列關係式：β₁=α₁-2γ₁N₁。第二接收光T032與第二中心軸C2之間的第二接收角β₂符合下列關係式：β₂=α₂-2γ₂N₂。其中α₁為第一投射角的角度，α₂為第二投射角的角度，β₁為第一接收角的角度，β₂為第二接收角的角度，γ₁為第一斜角的角度，γ₂為第二斜角的角度，N₁為第一投射光T011在第一表面1331以及第二表面1332之間的反射次數，N₂為第二投射光T012在第三表面1333以及第四表面1334之間的反射次數。 Next, the first projection light T011 is reflected N ₁ times between the first surface 1331 and the second surface 1332, and the second projection light T012 is reflected N ₂ times between the third surface 1333 and the fourth surface 1334, the first central axis Both C1 and the second central axis C2 are parallel to a horizontal axis HH. There is a first oblique angle γ ₁ between the first surface 1331 and the horizontal axis HH and between the second surface 1332 and the horizontal axis HH, respectively. There is a second oblique angle γ ₂ between the third surface 1333 and the horizontal axis HH and between the fourth surface 1334 and the horizontal axis HH, respectively. The first reception angle β ₁ between the first received light T031 and the second central axis C2 conforms to the following relationship: β ₁ = α _{1 -} 2γ ₁ N ₁ . The second reception angle β ₂ between the second received light T032 and the second central axis C2 conforms to the following relationship: β ₂ = α _{2 -} 2γ ₂ N ₂ . Where α ₁ is the angle of the first projection angle, α ₂ is the angle of the second projection angle, β ₁ is the angle of the first reception angle, β ₂ is the angle of the second reception angle, and γ ₁ is the angle of the first oblique angle , γ ₂ is the angle of the second oblique angle, N ₁ is the number of reflections of the first projection light T011 between the first surface 1331 and the second surface 1332, and N ₂ is the second projection light T012 on the third surface 1333 and the The number of reflections between the four surfaces 1334.

須說明的是，第二投射光T012在第三表面1333及第四表面1334之間的反射方式，與前述第一投射光T011在第一表面1331及第二表面相仿，在此不再贅述。因此，第二投射角α₂、第二接收角β₂以及第二斜角γ₂也都如同前述第一投射角α₁、第一接收角β₁以及第一斜角γ₁所述的實施方式。然而，值得說明的是，由於採樣腔體13的採樣空間S為一矩形形狀的橫截面，第三預定距離L3的尺寸也大於第一預定距離L1的尺寸，且第四預定距離L4的尺寸也大於第二預定距離L2的尺寸。藉此，第二斜角γ₂可介於0.1度至5度之間，優選為介於1度至3度之間，更優選為1.5度，但是本發明不以此為限。 It should be noted that the reflection manner of the second projection light T012 between the third surface 1333 and the fourth surface 1334 is similar to the first projection light T011 on the first surface 1331 and the second surface, and details are not described herein. Therefore, the second projection angle α ₂ , the second reception angle β _{2 ,} and the second oblique angle γ ₂ are also implemented as described above for the first projection angle α ₁ , the first reception angle β _{1 ,} and the first oblique angle γ ₁ . the way. However, it is worth noting that since the sampling space S of the sampling cavity 13 is a rectangular shaped cross section, the size of the third predetermined distance L3 is also larger than the size of the first predetermined distance L1, and the size of the fourth predetermined distance L4 is also A size larger than the second predetermined distance L2. Thereby, the second oblique angle γ ₂ may be between 0.1 degrees and 5 degrees, preferably between 1 degree and 3 degrees, more preferably 1.5 degrees, but the invention is not limited thereto.

進一步地，請配合上述說明並同時復參閱圖10及圖11所示，在前述第一實施例中，導光面141相對於一水平軸線HH傾斜一預定角度θ，投射光線T1在第一表面1331以及第二表面1332之間反射N次，第一中心軸C1平行於一水平軸線HH，在第一表面1331與水平軸線HH之間以及在第二表面1332與水平軸線HH之間分別具有一斜角γ，入射光T02與第一中心軸C1之間的入射角λ符合下列關係式：λ=α-2γN，其中α為投射角的角度，λ為入射角的角度，γ為斜角的角度，N為反射次數。 Further, please refer to the above description and refer to FIG. 10 and FIG. 11 at the same time. In the foregoing first embodiment, the light guiding surface 141 is inclined by a predetermined angle θ with respect to a horizontal axis HH, and the projection light T1 is on the first surface. 1331 and the second surface 1332 are reflected N times, the first central axis C1 is parallel to a horizontal axis HH, and there is a first between the first surface 1331 and the horizontal axis HH and between the second surface 1332 and the horizontal axis HH. The oblique angle γ, the incident angle λ between the incident light T02 and the first central axis C1 is in accordance with the following relation: λ=α-2γN, where α is the angle of the projection angle, λ is the angle of the incident angle, and γ is the oblique angle. Angle, N is the number of reflections.

另外，須說明的是，第二實施例中所提供的氣體量測裝置的其他結構與前述實施例相仿，且前述實施例的實施方式皆可應用於第二實施例，因此，在此不再贅述。 In addition, it should be noted that other structures of the gas measuring device provided in the second embodiment are similar to those of the foregoing embodiment, and the embodiments of the foregoing embodiments are applicable to the second embodiment, and therefore, no longer Narration.

[第三實施例] [Third embodiment]

首先，請參閱圖15至圖18所示，由圖15與圖1的比較可知，第三實施例與第一實施例最大的差別在於：第三實施例所提供的氣體量測裝置Q中的採樣腔體13可具有不同的形狀，另外，聚光腔體11可以僅具有第一反射結構111及第二反射結構112，且第一反射結構111的曲率與第二反射結構112的曲率彼此不同，而第三反射結構113可以選擇性的設置。另外，須說明的是，第二實施例所提供的氣體量測裝置Q的其他結構與前述實施例相仿，在此不再贅述。 First, referring to FIG. 15 to FIG. 18, it can be seen from the comparison between FIG. 15 and FIG. 1 that the greatest difference between the third embodiment and the first embodiment is that the gas measuring device Q provided in the third embodiment The sampling cavity 13 may have different shapes. In addition, the concentrating cavity 11 may have only the first reflective structure 111 and the second reflective structure 112, and the curvature of the first reflective structure 111 and the curvature of the second reflective structure 112 are different from each other. And the third reflective structure 113 can be selectively disposed. In addition, it should be noted that other structures of the gas measuring device Q provided in the second embodiment are similar to those of the foregoing embodiment, and are not described herein again.

請復參閱圖15至圖18所示，並一併參閱圖19所示，詳細來說，氣體量測裝置Q可包括一腔體模組1、一發光模組2、一光感測模組3以及一基板模組4。腔體模組1可包括一聚光腔體11、一容置腔體12以及一連接於聚光腔體11及容置腔體12之間的採樣腔體13。以第三實施例而言，聚光腔體11具有一第一反射結構111以及一連接於第一反射結構111的第二反射結構112。然而，在其他實施方式中，也可以進一步設置如同前述實施例所述的第三反射結構113，本發明不以此為限制。另外，第三實施例中所提供的氣體量測裝置Q可包括一導光部14，其效果如同前述第一實施例所述，主要是利用設置於導光部14上的導光面141將光線導入至光感測模組3之中。 Referring to FIG. 15 to FIG. 18, and referring to FIG. 19, in detail, the gas measuring device Q can include a cavity module 1, a light emitting module 2, and a light sensing module. 3 and a substrate module 4. The cavity module 1 can include a concentrating cavity 11 , an accommodating cavity 12 , and a sampling cavity 13 connected between the concentrating cavity 11 and the accommodating cavity 12 . In the third embodiment, the concentrating cavity 11 has a first reflective structure 111 and a second reflective structure 112 connected to the first reflective structure 111. However, in other embodiments, the third reflective structure 113 as described in the foregoing embodiments may be further disposed, and the present invention is not limited thereto. In addition, the gas measuring device Q provided in the third embodiment may include a light guiding portion 14 having the same effect as that of the first embodiment described above, mainly using the light guiding surface 141 disposed on the light guiding portion 14. Light is introduced into the light sensing module 3.

另外，如圖19至圖20所示，第一反射結構111具有一第一焦點E1及一對應於第一焦點E1的第二焦點E2，第二反射結構112具有一中心點O，第一焦點E1與中心點O彼此相對應設置。第一反射結構111具有一橢圓曲率曲面E，第二反射結構112具有一正圓曲率曲面C。進一步來說，發光模組2可設置於聚光腔體11上且對應於聚光腔體11，發光模組2包括一發光單元21，且發光單元21可對應於第一焦點E1及中心點O。優選地，發光單元21可 設置於第一焦點E1及中心點O上。再者，光感測模組3包括一光感測單元31，光感測單元31可設置於容置腔體12中。 In addition, as shown in FIG. 19 to FIG. 20, the first reflective structure 111 has a first focus E1 and a second focus E2 corresponding to the first focus E1, and the second reflective structure 112 has a center point O, the first focus. E1 and the center point O are arranged corresponding to each other. The first reflective structure 111 has an elliptical curvature surface E, and the second reflective structure 112 has a perfect circular curvature surface C. Further, the light-emitting module 2 can be disposed on the concentrating cavity 11 and corresponding to the concentrating cavity 11. The illuminating module 2 includes a illuminating unit 21, and the illuminating unit 21 can correspond to the first focus E1 and the center point. O. Preferably, the light emitting unit 21 can It is disposed on the first focus E1 and the center point O. In addition, the light sensing module 3 includes a light sensing unit 31 , and the light sensing unit 31 can be disposed in the receiving cavity 12 .

進一步來說，如圖17及圖19所示，腔體模組1可由上腔體模組1a及下腔體模組1b所組成，腔體模組1具有一採樣空間S(第一採樣空間S1及第二採樣空間S2)，且採樣腔體13可包括一連接於聚光腔體11的第一採樣腔13a、一連接於容置腔體12的第二採樣腔13b以及一連接於第一採樣腔13a與第二採樣腔13b之間的轉折部13c，其中，轉折部13c上具有一反射面13cs。優選地，反射面13cs可具有一拋物線曲率。另外，第一採樣腔13a可具有一第一軸線A1以及一位於第一採樣腔13a中的第一採樣空間S1，第二採樣腔13b可具有一第二軸線A2以及一位於第二採樣腔13b中的第二採樣空間S2，第一軸線A1與第二軸線A2大致呈平行設置。以本發明實施例而言，第一採樣腔13a、第二採樣腔13b以及轉折部13c三者可呈U字型形狀，但是本發明不以此為限。舉例來說，在其他實施方式中，第一採樣腔13a、第二採樣腔13b以及轉折部13c三者可呈L字型形狀(請參閱圖32所示)。 Further, as shown in FIG. 17 and FIG. 19, the cavity module 1 can be composed of an upper cavity module 1a and a lower cavity module 1b, and the cavity module 1 has a sampling space S (first sampling space) The first sampling chamber 13a connected to the concentrating cavity 11 A turning portion 13c between the sampling chamber 13a and the second sampling chamber 13b, wherein the turning portion 13c has a reflecting surface 13cs. Preferably, the reflecting surface 13cs may have a parabolic curvature. In addition, the first sampling cavity 13a may have a first axis A1 and a first sampling space S1 located in the first sampling cavity 13a. The second sampling cavity 13b may have a second axis A2 and a second sampling cavity 13b. In the second sampling space S2, the first axis A1 and the second axis A2 are disposed substantially in parallel. In the embodiment of the present invention, the first sampling cavity 13a, the second sampling cavity 13b, and the turning portion 13c may have a U-shaped shape, but the invention is not limited thereto. For example, in other embodiments, the first sampling cavity 13a, the second sampling cavity 13b, and the turning portion 13c may have an L-shape (refer to FIG. 32).

接著，請復參閱圖20至圖23所示，發光模組2所產生的一光線T包括一投射於第一反射結構111的第一投射光線T11、一投射於第二反射結構112的第二投射光線T21以及一直接投射於反射面13cs的投射光線T41。發光單元21所產生的第一投射光線T11、第二投射光線T21及投射光線T41可分別通過第一反射結構111、第二反射結構112、採樣腔體13的內表面133(第一表面1331、第二表面1332、第三表面1333以及第四表面1334)以及轉折部13c的反射面13cs的反射後，而分別形成投射到光感測模組3上的第一接收光線T13、第二接收光線T24以及接收光線T43。 Then, as shown in FIG. 20 to FIG. 23, a light T generated by the light-emitting module 2 includes a first projected light T11 projected on the first reflective structure 111 and a second projected on the second reflective structure 112. The light ray T21 is projected and a projected light ray T41 directly projected on the reflecting surface 13cs. The first projected light T11, the second projected light T21, and the projected light T41 generated by the light emitting unit 21 can pass through the first reflective structure 111, the second reflective structure 112, and the inner surface 133 of the sampling cavity 13 (the first surface 1331, respectively). After the second surface 1332, the third surface 1333, and the fourth surface 1334) and the reflective surface 13cs of the turning portion 13c are reflected, the first received light T13 and the second received light that are projected onto the light sensing module 3 are respectively formed. T24 and receiving light T43.

承上述，如圖20所示，以下將先說明發光單元21投射在第一反射結構111上的光路徑。詳細來說，第一投射光線T11可通過第一反射結構111的反射，以形成一投射至第二焦點E2的第一 反射光線T12，藉此，第一反射光線T12與採樣腔體13中的內表面133相互配合，且第一反射光線T12通過反射面13cs的反射，以形成一投射至光感測單元31上而被光感測單元31所接收的第一接收光線T13。以本發明第三實施例而言，第一反射光線T12可通過採樣腔體13的內表面133、轉折部13c的反射面13cs以及導光部14的導光面141的反射而形成投射至光感測單元31的第一接收光線T13。 As described above, as shown in FIG. 20, the light path of the light-emitting unit 21 projected on the first reflection structure 111 will be described below. In detail, the first projected light T11 can be reflected by the first reflective structure 111 to form a first projection to the second focus E2. The light ray T12 is reflected, whereby the first reflected light T12 and the inner surface 133 of the sampling cavity 13 cooperate with each other, and the first reflected light T12 is reflected by the reflective surface 13cs to form a projection onto the light sensing unit 31. The first received light ray T13 received by the light sensing unit 31. In the third embodiment of the present invention, the first reflected light ray T12 can be projected onto the light by the inner surface 133 of the sampling cavity 13, the reflective surface 13cs of the turning portion 13c, and the light guiding surface 141 of the light guiding portion 14. The first received light T13 of the sensing unit 31.

承上述，請參閱圖21所示，以下將接著說明發光單元21投射在第二反射結構112上的光路徑。詳細來說，第二投射光線T21通過第二反射結構112的反射，以形成一投射至第一反射結構111的第二反射光線T22，第二反射光線T22通過第一反射結構111的反射，以形成一投射至第二焦點E2的第三反射光線T23，第三反射光線T23與採樣腔體13中的內表面相互配合，且第三反射光線T23通過反射面13cs的反射，以形成一投射至光感測單元31上而被光感測單元31所接收的第二接收光線T24。以本發明第三實施例而言，第三反射光線T23可通過採樣腔體13的內表面133、轉折部13c的反射面13cs以及導光部14的導光面141的反射而形成投射至光感測單元31的第二接收光線T24。須說明的是，原則上第二反射光線T22可通過第二反射結構112的中心點O及第一反射結構111的第一焦點E1，但是，為避免混淆，圖21中所顯示的第二反射光線T22，以未通過第一焦點E1的方式呈現。 In view of the above, please refer to FIG. 21, and the light path of the light-emitting unit 21 projected on the second reflective structure 112 will be described below. In detail, the second projected light T21 is reflected by the second reflective structure 112 to form a second reflected light T22 projected to the first reflective structure 111, and the second reflected light T22 is reflected by the first reflective structure 111 to Forming a third reflected light T23 projected to the second focus E2, the third reflected light T23 interacts with the inner surface of the sampling cavity 13, and the third reflected light T23 is reflected by the reflective surface 13cs to form a projection to The second received light T24 received by the light sensing unit 31 on the light sensing unit 31. In the third embodiment of the present invention, the third reflected light T23 can be projected onto the light by the inner surface 133 of the sampling cavity 13, the reflective surface 13cs of the turning portion 13c, and the light guiding surface 141 of the light guiding portion 14. The second received light T24 of the sensing unit 31. It should be noted that, in principle, the second reflected light T22 can pass through the center point O of the second reflective structure 112 and the first focus E1 of the first reflective structure 111, but to avoid confusion, the second reflection shown in FIG. The light ray T22 is presented in such a manner that it does not pass through the first focus E1.

接著，請參閱圖22所示，以下將接著說明發光單元21直接投射在轉折部13c的反射面13cs上的光路徑。詳細來說，發光單元21產生的投射光線T41可直接投射在反射面13cs上，且由於反射面13cs為拋物線曲率的曲面，因此，投射光線T41可通過反射面13cs的反射而形成一通過反射面13cs的焦點U的反射光線T42，且反射光線T42可再通過反射面的反射，而形成一投射至光感測單元31上而被光感測單元31所接收的接收光線T43。 Next, referring to Fig. 22, the light path directly projected by the light-emitting unit 21 on the reflecting surface 13cs of the turning portion 13c will be described below. In detail, the projected light T41 generated by the light-emitting unit 21 can be directly projected on the reflective surface 13cs, and since the reflective surface 13cs is a curved surface having a parabolic curvature, the projected light T41 can be formed by the reflection surface 13cs. The focus U of the 13cs reflects the light T42, and the reflected light T42 can be reflected by the reflective surface to form a received light T43 that is projected onto the light sensing unit 31 and received by the light sensing unit 31.

接著，請參閱圖23至圖25所示，並一併配合前述第一實施例中對圖5及圖9至圖11的說明，以下將進一步說明光線在第二採樣腔13b中的路徑。詳細來說，以本發明第三實施例而言，腔體模組1包括一設置於採樣腔體13及容置腔體12之間的導光部14，導光部14可具有一導光面141，以通過導光面141將發光單元21所產生的光線T反射至光感測單元31中。另外，腔體模組1還可進一步包括一開槽15，開槽15可連接於導光部14及容置腔體12之間。藉以使得採樣腔體13的第二表面1332與光感測單元31之間彼此相距一預定高度H。藉此，發光單元21所產生的光線T能夠大致呈“L”形的方式由發光單元21投射至光感測單元31上。 Next, referring to FIG. 23 to FIG. 25, together with the description of FIG. 5 and FIG. 9 to FIG. 11 in the foregoing first embodiment, the path of the light in the second sampling chamber 13b will be further explained below. In detail, in the third embodiment of the present invention, the cavity module 1 includes a light guiding portion 14 disposed between the sampling cavity 13 and the accommodating cavity 12, and the light guiding portion 14 can have a light guiding portion. The surface 141 reflects the light T generated by the light emitting unit 21 through the light guiding surface 141 into the light sensing unit 31. In addition, the cavity module 1 can further include a slot 15 , and the slot 15 can be connected between the light guiding portion 14 and the receiving cavity 12 . Thereby, the second surface 1332 of the sampling cavity 13 and the light sensing unit 31 are spaced apart from each other by a predetermined height H. Thereby, the light T generated by the light emitting unit 21 can be projected onto the light sensing unit 31 by the light emitting unit 21 in a substantially "L" shape.

承上述，請復參閱圖23所示，導光部14的導光面141可相對於一水平軸線HH傾斜一介於30度至60度之間的預定角度θ，或者是導光部14的導光面141相對於光感測單元31的第一表面1331或第二表面1332傾斜一介於30度至60度之間的預定角度θ。優選地，預定角度θ可以為45度。另外，值得說明的是，導光部14與開槽15的其他特徵與前述實施例相仿，在此不再贅述。 In the above, as shown in FIG. 23, the light guiding surface 141 of the light guiding portion 14 can be inclined with respect to a horizontal axis HH by a predetermined angle θ between 30 degrees and 60 degrees, or is a guide of the light guiding portion 14. The light surface 141 is inclined with respect to the first surface 1331 or the second surface 1332 of the light sensing unit 31 by a predetermined angle θ between 30 degrees and 60 degrees. Preferably, the predetermined angle θ may be 45 degrees. In addition, it should be noted that other features of the light guiding portion 14 and the slot 15 are similar to those of the foregoing embodiment, and are not described herein again.

接著，請參閱圖24及25所示，在第三實施例所提供的第二採樣腔13b中的第一表面1331與第二表面1332兩者可呈平行設置或是呈非平行設置。如圖24所示的實施方式，第二預定距離L2的尺寸等於第一預定距離L1的尺寸且第一開口131的截面積等於第二開口132的截面積。圖25所示的實施方式，第一預定距離L1及第二預定距離L2兩者不同，且第二預定距離L2大於第一預定距離L1。 24 and 25, the first surface 1331 and the second surface 1332 in the second sampling chamber 13b provided in the third embodiment may be arranged in parallel or in a non-parallel manner. As shown in the embodiment shown in FIG. 24, the size of the second predetermined distance L2 is equal to the size of the first predetermined distance L1 and the cross-sectional area of the first opening 131 is equal to the cross-sectional area of the second opening 132. In the embodiment shown in FIG. 25, the first predetermined distance L1 and the second predetermined distance L2 are different, and the second predetermined distance L2 is greater than the first predetermined distance L1.

詳細來說，如圖24及25所示，第二採樣腔13b具有一第一表面1331以及一第二表面1332，第二採樣腔13b具有一第一開口131以及一對應於第一開口131的第二開口132，所述第一開口131連接於轉折部13c，第二開口132連接於容置腔體12，第一開口 131的第一表面1331及第二表面1332之間具有一第一預定距離L1，第二開口132的第一表面1331及第二表面1332之間具有一第二預定距離L2，第二預定距離L2大於第一預定距離L1。換句話說，第一開口131的截面積小於第二開口132的截面積，以提高光感測單元31所能夠接收到的紅外線能量。需說明的是，圖24及圖25中的第二採樣腔13b中的光線路徑如同前述，因此，請參閱圖24及圖25中的符號並同時參閱前述實施例中對圖9及圖10的描述說明，在此不再贅述。也就是說，第三實施例中所提供的氣體量測裝置Q的第二採樣腔13b中的光線也符合關係式：λ=α-2γN，其中α為投射角的角度，λ為入射角的角度，γ為斜角的角度，N為反射次數。 In detail, as shown in FIGS. 24 and 25, the second sampling chamber 13b has a first surface 1331 and a second surface 1332. The second sampling chamber 13b has a first opening 131 and a corresponding first opening 131. a second opening 132, the first opening 131 is connected to the turning portion 13c, and the second opening 132 is connected to the receiving cavity 12, the first opening A first predetermined distance L1 is formed between the first surface 1331 and the second surface 1332 of the 131, and a second predetermined distance L2 is formed between the first surface 1331 and the second surface 1332 of the second opening 132. The second predetermined distance L2 Greater than the first predetermined distance L1. In other words, the cross-sectional area of the first opening 131 is smaller than the cross-sectional area of the second opening 132 to increase the infrared energy that the photo sensing unit 31 can receive. It should be noted that the light path in the second sampling cavity 13b in FIG. 24 and FIG. 25 is as described above. Therefore, please refer to the symbols in FIG. 24 and FIG. 25 and refer to FIG. 9 and FIG. 10 in the foregoing embodiment. Descriptions are not repeated here. That is to say, the light in the second sampling cavity 13b of the gas measuring device Q provided in the third embodiment also conforms to the relation: λ=α-2γN, where α is the angle of the projection angle and λ is the incident angle. Angle, γ is the angle of the oblique angle, and N is the number of reflections.

承上述，請參閱圖26所示，並一併配合圖14所示，在其他實施方式中，第二採樣腔13b的第三表面1333與相對於第三表面1333的第四表面1334兩者之間也可呈非平行設置。詳細而言，第一開口131的第三表面1333與第四表面1334之間具有一第三預定距離L3，第二開口132的第三表面1333與第四表面1334之間具有一第四預定距離L4，第四預定距離L4大於第三預定距離L3。藉此，通過上述特徵，也能提高光感測單元31所能夠接收到的紅外線能量。進一步來說，在其他實施方式中，第一採樣腔13a的第三表面1333與相對於第三表面1333的第四表面1334兩者之間也可呈非平行設置，以改變光線之路徑，進而提高光感測單元31所能夠接收到的紅外線能量。 Referring to the above, please refer to FIG. 26, and together with FIG. 14, in other embodiments, the third surface 1333 of the second sampling cavity 13b and the fourth surface 1334 relative to the third surface 1333 They can also be set in non-parallel. In detail, the third surface 1333 of the first opening 131 and the fourth surface 1334 have a third predetermined distance L3, and the third surface 1333 of the second opening 132 has a fourth predetermined distance between the third surface 1333 and the fourth surface 1334. L4, the fourth predetermined distance L4 is greater than the third predetermined distance L3. Thereby, the infrared ray energy which the photo-sensing unit 31 can receive can also be improved by the above characteristics. Further, in other embodiments, the third surface 1333 of the first sampling cavity 13a and the fourth surface 1334 relative to the third surface 1333 may also be disposed non-parallel to change the path of the light, and further The infrared energy that the light sensing unit 31 can receive is increased.

接著，請參閱圖27所示，由圖27與圖20至圖22的比較可知，在圖27的實施方式中，聚光腔體11還可進一步包括一如同前述第一實施例所述的第三反射結構113。詳細來說，以第三實施例而言，發光模組2所產生的一光線T還進一步包括一投射於第三反射結構113的第三投射光線T31。第三投射光線T31可通過第三反射結構113的反射，以形成一投射至轉折部13c的反射面 13cs上的第四反射光線T32，第四反射光線T32可通過反射面13cs的反射，以形成一投射至光感測單元31上而被光感測單元31所接收的第三接收光線T33。優選地，反射面13cs可以為一拋物線曲率的曲面，藉此，投射至反射面13cs上的第四反射光線T32可以先通過反射面13cs的焦點U，再投射至反射面13cs上，以形成一投射至光感測單元31上而被光感測單元31所接收的第三接收光線T33。 Next, referring to FIG. 27, it can be seen from the comparison between FIG. 27 and FIG. 20 to FIG. 22 that, in the embodiment of FIG. 27, the concentrating cavity 11 may further include a first embodiment as described in the foregoing first embodiment. A three-reflection structure 113. In detail, in a third embodiment, a light T generated by the light emitting module 2 further includes a third projected light T31 projected on the third reflective structure 113. The third projected light T31 can be reflected by the third reflective structure 113 to form a reflective surface projected onto the turning portion 13c. The fourth reflected light T32 on the 13cs, the fourth reflected light T32 can be reflected by the reflective surface 13cs to form a third received light T33 that is projected onto the light sensing unit 31 and received by the light sensing unit 31. Preferably, the reflective surface 13cs may be a curved surface having a parabolic curvature, whereby the fourth reflected light T32 projected onto the reflective surface 13cs may first pass through the focal point U of the reflective surface 13cs and then be projected onto the reflective surface 13cs to form a The third received light T33 is projected onto the light sensing unit 31 and received by the light sensing unit 31.

另外，須特別說明的是，第三實施例所提供的第二採樣腔13b的結構與前述第一實施例的採樣腔體相仿，且第一實施例及第二實施例中的實施方式皆能應用於第三實施例中，因此，在此不再贅述。 In addition, it should be particularly noted that the structure of the second sampling cavity 13b provided by the third embodiment is similar to that of the sampling cavity of the first embodiment, and the embodiments of the first embodiment and the second embodiment can It is applied to the third embodiment, and therefore, it will not be described herein.

[第四實施例] [Fourth embodiment]

首先，請參閱圖28至圖30所示，由圖28與圖15的比較可知，第四實施例與第二實施例最大的差別在於：第四實施例所提供的氣體量測裝置Q中的容置腔體12與可具有不同的形狀，另外，聚光腔體11可以僅具有第一反射結構111及第二反射結構112，且第一反射結構111的曲率與第二反射結構112的曲率彼此不同，而第三反射結構113可以選擇性的設置。另外，以第四實施例而言，腔體模組1可不具有導光部14及開槽15，而是直接將發光單元21所產生的光線T通過轉折部13c的反射面13cs的反射後，而投射至光感測單元31上。換句話說，發光模組2可具有一第一中心軸C1，第一中心軸C1可穿過發光單元21的光源中心點(圖中未示出)。光感測模組3可具有一第二中心軸C2，第二中心軸C2可穿過光感測模組3中用來接收光源的中心點。值得說明的是，以本發明第二實施例而言，第一中心軸C1與第二中心軸C2相互平行。須說明的是，第四實施例所提供的氣體量測裝置Q的其他結構與前述實施例相仿，在此不再贅述。 First, referring to FIG. 28 to FIG. 30, it can be seen from the comparison between FIG. 28 and FIG. 15 that the greatest difference between the fourth embodiment and the second embodiment is that the gas measuring device Q provided in the fourth embodiment The accommodating cavity 12 can have a different shape. In addition, the concentrating cavity 11 can have only the first reflective structure 111 and the second reflective structure 112, and the curvature of the first reflective structure 111 and the curvature of the second reflective structure 112. Different from each other, the third reflective structure 113 can be selectively disposed. In addition, in the fourth embodiment, the cavity module 1 does not have the light guiding portion 14 and the slot 15, but directly reflects the light T generated by the light emitting unit 21 through the reflecting surface 13cs of the turning portion 13c. It is projected onto the light sensing unit 31. In other words, the light-emitting module 2 can have a first central axis C1, and the first central axis C1 can pass through a light source center point (not shown) of the light-emitting unit 21. The light sensing module 3 can have a second central axis C2 that can pass through a center point of the light sensing module 3 for receiving the light source. It should be noted that, in the second embodiment of the present invention, the first central axis C1 and the second central axis C2 are parallel to each other. It should be noted that other structures of the gas measuring device Q provided in the fourth embodiment are similar to those of the foregoing embodiment, and are not described herein again.

接著，請參閱圖30及圖31所示，第二採樣腔13b具有一第三表面1333以及一第四表面1334，第二採樣腔13b具有一第一開口131以及一對應於第一開口131的第二開口132，所述第一開口131連接於轉折部13c，第二開口132連接於容置腔體12，第一開口131的第三表面1333及第四表面1334之間具有一第三預定距離L3，第二開口132的第三表面1333及第四表面1334之間具有一第四預定距離L4，第四預定距離L4可大於或等於第三預定距離L3。換句話說，第一開口131的截面積可小於或等於第二開口132的截面積以提高光感測單元31所能夠接收到的紅外線能量。 Referring to FIG. 30 and FIG. 31, the second sampling chamber 13b has a third surface 1333 and a fourth surface 1334. The second sampling chamber 13b has a first opening 131 and a corresponding first opening 131. a second opening 132, the first opening 131 is connected to the turning portion 13c, and the second opening 132 is connected to the receiving cavity 12, and the third surface 1333 of the first opening 131 and the fourth surface 1334 have a third predetermined The distance L3, the third surface 1333 of the second opening 132 and the fourth surface 1334 have a fourth predetermined distance L4, and the fourth predetermined distance L4 may be greater than or equal to the third predetermined distance L3. In other words, the cross-sectional area of the first opening 131 may be less than or equal to the cross-sectional area of the second opening 132 to increase the infrared energy that the light sensing unit 31 can receive.

[第五實施例] [Fifth Embodiment]

首先，請參閱圖32所示，由圖32與圖20的比較可知，第五實施例所提供的氣體量測裝置Q中的採樣腔體13可具有不同的形狀。也就是說，第一採樣腔13a、第二採樣腔13b以及轉折部13c三者可呈L字型形狀。 First, referring to FIG. 32, it can be seen from the comparison between FIG. 32 and FIG. 20 that the sampling chambers 13 in the gas measuring device Q provided in the fifth embodiment can have different shapes. That is, the first sampling chamber 13a, the second sampling chamber 13b, and the turning portion 13c may have an L-shape.

另外，須說明的是，第五實施例中所提供的氣體量測裝置的其他結構與前述實施例相仿，且前述實施例的實施方式皆可應用於第五實施例，因此，在此不再贅述。 In addition, it should be noted that other structures of the gas measuring device provided in the fifth embodiment are similar to those of the foregoing embodiment, and the embodiments of the foregoing embodiments are applicable to the fifth embodiment, and therefore, no longer Narration.

[實施例的有益效果] [Advantageous Effects of Embodiments]

本發明實施例所提供的氣體量測裝置Q，其能利用“聚光腔體11具有一第一反射結構111、一連接於第一反射結構111的第二反射結構112以及一連接於第一反射結構111的第三反射結構113，其中，第一反射結構111設置於第二反射結構112與第三反射結構113之間”的技術方案，或是“採樣腔體13包括一連接於聚光腔體11的第一採樣腔13a、一連接於容置腔體12的第二採樣腔13b以及一連接於第一採樣腔13a與第二採樣腔13b之間的轉折部13c，其中，轉折部13c上具有一反射面13cs”的技術方案， 而能提高腔體模組1的集光性，同時也能將氣體量測裝置Q微型化。 The gas measuring device Q provided by the embodiment of the present invention can utilize the "concentrating cavity 11 having a first reflective structure 111, a second reflective structure 112 connected to the first reflective structure 111, and a first connection a third reflective structure 113 of the reflective structure 111, wherein the first reflective structure 111 is disposed between the second reflective structure 112 and the third reflective structure 113, or the sampling cavity 13 includes a connection to the concentrating light. a first sampling chamber 13a of the cavity 11, a second sampling chamber 13b connected to the receiving cavity 12, and a turning portion 13c connected between the first sampling chamber 13a and the second sampling chamber 13b, wherein the turning portion a technical solution having a reflecting surface 13cs" on the 13c, The light collecting property of the cavity module 1 can be improved, and the gas measuring device Q can be miniaturized.

以上所公開的內容僅為本發明的優選可行實施例，並非因此侷限本發明的專利範圍，所以凡是運用本發明說明書及附圖內容所做的等效技術變化，均包含於本發明的保護範圍內。 The above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, equivalent technical changes made by using the present specification and the contents of the drawings are included in the scope of protection of the present invention. Inside.

Claims (32)

一種氣體量測裝置，其包括：一腔體模組，所述腔體模組包括一聚光腔體、一容置腔體以及一連接於所述聚光腔體及所述容置腔體之間的採樣腔體，其中，所述聚光腔體具有一第一反射結構以及一連接於所述第一反射結構的第二反射結構，其中，所述第一反射結構具有一橢圓曲率曲面，所述第二反射結構具有一正圓曲率曲面；一發光模組，所述發光模組設置於所述聚光腔體上，所述發光模組包括一發光單元，其中所述發光單元對應於所述聚光腔體；以及一光感測模組，所述光感測模組包括一光感測單元，所述光感測單元設置於所述容置腔體中。 A gas measuring device includes: a cavity module, the cavity module includes a concentrating cavity, an accommodating cavity, and a concentrating cavity and the accommodating cavity a sampling cavity between the concentrating cavity having a first reflective structure and a second reflective structure coupled to the first reflective structure, wherein the first reflective structure has an elliptical curvature surface The illuminating module is disposed on the concentrating cavity, and the illuminating module includes a illuminating unit, wherein the illuminating unit is corresponding to the illuminating module. The light sensing module includes a light sensing unit, and the light sensing unit is disposed in the receiving cavity. 如請求項1所述的氣體量測裝置，其中，所述發光模組所產生的一光線包括一投射於所述第一反射結構的第一投射光線以及一投射於所述第二反射結構的第二投射光線，其中，所述第一投射光線通過所述第一反射結構的反射，以形成一投射至所述第二焦點的第一反射光線，所述第一反射光線與所述採樣腔體相互配合，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第一接收光線，其中，所述第二投射光線通過所述第二反射結構的反射，以形成一投射至所述第一反射結構的第二反射光線，所述第二反射光線通過所述第一反射結構的反射，以形成一投射至所述第二焦點的第三反射光線，所述第三反射光線與所述採樣腔體相互配合，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第二接收光線。 The gas measuring device of claim 1, wherein the light generated by the light emitting module comprises a first projected light projected onto the first reflective structure and a projected on the second reflective structure. a second projected ray, wherein the first projected ray is reflected by the first reflective structure to form a first reflected ray projected to the second focus, the first reflected ray and the sampling cavity The bodies cooperate to form a first received light that is projected onto the light sensing unit and received by the light sensing unit, wherein the second projected light passes through the reflection of the second reflective structure. Forming a second reflected ray that is projected onto the first reflective structure, the second reflected ray being reflected by the first reflective structure to form a third reflected ray that is projected to the second focus, The third reflected light interacts with the sampling cavity to form a second received light that is projected onto the light sensing unit and received by the light sensing unit. 如請求項1所述的氣體量測裝置，其中，所述第一反射結構具有一第一焦點以及一對應於所述第一焦點的第二焦點，所述第二反射結構具有一中心點，所述第一焦點以及所述中心點彼此 相對應設置。 The gas measuring device of claim 1, wherein the first reflective structure has a first focus and a second focus corresponding to the first focus, and the second reflective structure has a center point, The first focus and the center point are mutually Corresponding settings. 如請求項3所述的氣體量測裝置，其中，所述發光單元對應於所述第一焦點以及所述中心點。 The gas measuring device of claim 3, wherein the light emitting unit corresponds to the first focus and the center point. 如請求項4所述的氣體量測裝置，其中，所述發光單元設置於所述第一焦點以及所述中心點上。 The gas measuring device according to claim 4, wherein the light emitting unit is disposed on the first focus and the center point. 如請求項1所述的氣體量測裝置，其中，所述聚光腔體還具有一連接於所述第一反射結構的第三反射結構，所述第一反射結構設置於所述第二反射結構與所述第三反射結構之間，所述第三反射結構具有一拋物線曲率曲面。 The gas measuring device of claim 1, wherein the concentrating cavity further has a third reflective structure connected to the first reflective structure, the first reflective structure being disposed at the second reflective Between the structure and the third reflective structure, the third reflective structure has a parabolic curvature surface. 如請求項1所述的氣體量測裝置，其中，所述採樣腔體包括一連接於所述聚光腔體的第一採樣腔、一連接於所述容置腔體的第二採樣腔以及一連接於所述第一採樣腔與所述第二採樣腔之間的轉折部。 The gas measuring device of claim 1, wherein the sampling chamber comprises a first sampling chamber connected to the concentrating cavity, a second sampling chamber connected to the accommodating cavity, and a transition portion connected between the first sampling chamber and the second sampling chamber. 如請求項7所述的氣體量測裝置，其中，所述第一採樣腔、所述第二採樣腔以及所述轉折部三者呈U字型形狀。 The gas measuring device according to claim 7, wherein the first sampling chamber, the second sampling chamber, and the turning portion have a U-shape. 如請求項1所述的氣體量測裝置，其中，所述採樣腔體具有一第一開口以及一對應於所述第一開口的第二開口，所述第一開口連接於所述聚光腔體，所述第二開口連接於所述容置腔體，所述第一開口的截面積小於所述第二開口的截面積。 The gas measuring device of claim 1, wherein the sampling chamber has a first opening and a second opening corresponding to the first opening, the first opening being connected to the concentrating cavity The second opening is connected to the accommodating cavity, and the cross-sectional area of the first opening is smaller than the cross-sectional area of the second opening. 如請求項1所述的氣體量測裝置，其中，所述採樣腔體具有一第一表面以及一第二表面，所述採樣腔體具有一第一開口以及一對應於所述第一開口的第二開口，所述第一開口連接於所述聚光腔體，所述第二開口連接於所述容置腔體，所述第一開口的所述第一表面及所述第二表面之間具有一第一預定距離，所述第二開口的所述第一表面及所述第二表面之間具有一第二預定距離，所述第二預定距離大於所述第一預定距離。 The gas measuring device of claim 1, wherein the sampling cavity has a first surface and a second surface, the sampling cavity has a first opening and a first opening a second opening, the first opening is connected to the concentrating cavity, the second opening is connected to the accommodating cavity, and the first surface and the second surface of the first opening There is a first predetermined distance between the first surface and the second surface of the second opening, and the second predetermined distance is greater than the first predetermined distance. 如請求項10所述的氣體量測裝置，其中，所述腔體模組還進一步包括一設置於所述採樣腔體及所述容置腔體之間的導光 部，鄰近於所述第二開口的所述第二表面與所述光感測單元之間具有一預定高度，所述預定高度及所述第二預定距離符合下列公式：(0.8*L2)≦H≦(3*L2)，其中H為所述預定高度，L2為所述第二預定距離。 The gas measuring device of claim 10, wherein the cavity module further comprises a light guide disposed between the sampling cavity and the receiving cavity a second height between the second surface adjacent to the second opening and the light sensing unit, the predetermined height and the second predetermined distance conforming to the following formula: (0.8*L2)≦ H≦(3*L2), where H is the predetermined height and L2 is the second predetermined distance. 如請求項1所述的氣體量測裝置，其中，所述採樣腔體包括一第一開口、一對應於所述第一開口的第二開口、一第一表面以及一對應於所述第一表面的第二表面，所述第一開口連接於所述聚光腔體，所述第二開口連接於所述容置腔體，所述第一表面以及所述第二表面設置於所述第一開口與所述第二開口之間，所述第一表面與所述第二表面呈非平行設置。 The gas measuring device of claim 1, wherein the sampling chamber comprises a first opening, a second opening corresponding to the first opening, a first surface, and a first corresponding to the first a second surface of the surface, the first opening is connected to the concentrating cavity, the second opening is connected to the accommodating cavity, and the first surface and the second surface are disposed on the first surface Between an opening and the second opening, the first surface and the second surface are disposed non-parallel. 如請求項1所述的氣體量測裝置，其中，所述腔體模組還進一步包括一設置於所述採樣腔體及所述容置腔體之間的導光部，所述導光部具有一導光面，所述導光面相對於一水平軸線傾斜一介於30度至60度之間的預定角度。 The gas measuring device of claim 1, wherein the cavity module further comprises a light guiding portion disposed between the sampling cavity and the accommodating cavity, the light guiding portion There is a light guiding surface that is inclined with respect to a horizontal axis by a predetermined angle between 30 degrees and 60 degrees. 如請求項1所述的氣體量測裝置，其中，所述腔體模組還進一步包括一設置於所述採樣腔體及所述容置腔體之間的導光部以及一開槽，所述開槽連接於所述導光部及所述容置腔體之間，所述採樣腔體具有一第一表面及一第二表面，所述開槽具有一預定寬度，所述採樣腔體的所述第二表面及所述光感測單元之間具有一預定高度，所述預定寬度及所述預定高度符合下列公式：(0.8*W)≦H≦(3*W)，其中H為所述預定高度，W為所述預定寬度。 The gas measuring device of claim 1, wherein the cavity module further comprises a light guiding portion disposed between the sampling cavity and the accommodating cavity, and a slot. The slot is connected between the light guiding portion and the receiving cavity, the sampling cavity has a first surface and a second surface, the slot has a predetermined width, and the sampling cavity The second surface and the light sensing unit have a predetermined height, and the predetermined width and the predetermined height meet the following formula: (0.8*W) ≦H≦(3*W), wherein H is The predetermined height, W, is the predetermined width. 如請求項1所述的氣體量測裝置，其中，所述第一反射結構直接連接於所述第二反射結構，以形成一位於所述第一反射結構與所述第二反射結構之間的單一輪廓線。 The gas measuring device of claim 1, wherein the first reflective structure is directly connected to the second reflective structure to form a first reflective structure and the second reflective structure. Single outline. 如請求項1所述的氣體量測裝置，其中，所述聚光腔體還具有一連接於所述第一反射結構的第三反射結構，所述第一反射結構設置於所述第二反射結構與所述第三反射結構之間，所述第 三反射結構具有一拋物線曲率曲面；其中，所述發光模組所產生的一光線包括一投射於所述第一反射結構的第一投射光線、一投射於所述第二反射結構的第二投射光線以及一投射於所述第三反射結構的第三投射光線，其中，所述第一投射光線通過所述第一反射結構的反射，以形成一投射至所述第二焦點的第一反射光線，所述第一反射光線與所述採樣腔體相互配合，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第一接收光線，其中，所述第二投射光線通過所述第二反射結構的反射，以形成一投射至所述第一反射結構的第二反射光線，所述第二反射光線通過所述第一反射結構的反射，以形成一投射至所述第二焦點的第三反射光線，所述第三反射光線與所述採樣腔體相互配合，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第二接收光線，其中，所述第三投射光線通過所述第三反射結構的反射，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第三接收光線。 The gas measuring device of claim 1, wherein the concentrating cavity further has a third reflective structure connected to the first reflective structure, the first reflective structure being disposed at the second reflective Between the structure and the third reflective structure, the first The three-reflection structure has a parabolic curvature surface; wherein a light generated by the illumination module includes a first projection light projected onto the first reflective structure and a second projection projected on the second reflective structure a light and a third projected light projected onto the third reflective structure, wherein the first projected light passes through the reflection of the first reflective structure to form a first reflected light that is projected onto the second focus The first reflected light and the sampling cavity cooperate to form a first received light that is projected onto the light sensing unit and received by the light sensing unit, wherein the second Projecting light is reflected by the second reflective structure to form a second reflected light that is projected onto the first reflective structure, and the second reflected light is reflected by the first reflective structure to form a projection to a third reflected light of the second focus, the third reflected light and the sampling cavity cooperate to form a projection onto the light sensing unit and connected by the light sensing unit a second received light, wherein the third projected light is reflected by the third reflective structure to form a third receive that is projected onto the light sensing unit and received by the light sensing unit Light. 一種氣體量測裝置，其包括：一腔體模組，所述腔體模組包括一聚光腔體、一容置腔體以及一連接於所述聚光腔體及所述容置腔體之間的採樣腔體，其中，所述聚光腔體具有一第一反射結構以及一連接於所述第一反射結構的第二反射結構，其中，所述採樣腔體包括一連接於所述聚光腔體的第一採樣腔、一連接於所述容置腔體的第二採樣腔以及一連接於所述第一採樣腔與所述第二採樣腔之間的轉折部，其中，所述轉折部上具有一反射面，所述反射面具有一拋物線曲率；一發光模組，所述發光模組設置於所述聚光腔體上，所述發光模組包括一發光單元，其中所述發光單元對應於所述聚光腔體；以及一光感測模組，所述光感測模組包括一光感測單元，所述光感 測單元設置於所述容置腔體中；其中，所述第一採樣腔具有一第一軸線，所述第二採樣腔具有一第二軸線，所述第一軸線與所述第二軸線呈平行設置；其中，所述第一採樣腔、所述第二採樣腔以及所述轉折部三者呈U字型形狀。 A gas measuring device includes: a cavity module, the cavity module includes a concentrating cavity, an accommodating cavity, and a concentrating cavity and the accommodating cavity a sampling cavity, wherein the concentrating cavity has a first reflective structure and a second reflective structure coupled to the first reflective structure, wherein the sampling cavity includes a connection to the a first sampling cavity of the concentrating cavity, a second sampling cavity connected to the accommodating cavity, and a turning portion connected between the first sampling cavity and the second sampling cavity, wherein a reflective surface having a reflective surface, the reflective mask having a parabolic curvature; a light emitting module, the light emitting module is disposed on the light collecting cavity, the light emitting module includes a light emitting unit, wherein The light emitting unit corresponds to the concentrating cavity; and a light sensing module, the light sensing module includes a light sensing unit, and the light sensation The measuring unit is disposed in the accommodating cavity; wherein the first sampling cavity has a first axis, the second sampling cavity has a second axis, and the first axis is opposite to the second axis Parallelly disposed; wherein the first sampling cavity, the second sampling cavity, and the turning portion have a U-shape. 如請求項17所述的氣體量測裝置，其中，所述第一反射結構的曲率與所述第二反射結構的曲率不同。 The gas measuring device of claim 17, wherein the curvature of the first reflective structure is different from the curvature of the second reflective structure. 如請求項17所述的氣體量測裝置，其中，所述第一反射結構具有一第一焦點及一對應於所述第一焦點的第二焦點，所述第二反射結構具有一中心點，所述第一焦點與所述中心點彼此相對應設置。 The gas measuring device of claim 17, wherein the first reflective structure has a first focus and a second focus corresponding to the first focus, and the second reflective structure has a center point, The first focus and the center point are disposed corresponding to each other. 如請求項17所述的氣體量測裝置，其中，所述發光單元對應於所述第一焦點以及所述中心點。 The gas measuring device of claim 17, wherein the light emitting unit corresponds to the first focus and the center point. 如請求項20所述的氣體量測裝置，其中，所述發光單元設置於所述第一焦點以及所述中心點上。 The gas measuring device of claim 20, wherein the light emitting unit is disposed on the first focus and the center point. 如請求項17所述的氣體量測裝置，其中，所述第一反射結構具有一橢圓曲率曲面，所述第二反射結構具有一正圓曲率曲面。 The gas measuring device according to claim 17, wherein the first reflecting structure has an elliptical curvature curved surface, and the second reflecting structure has a perfect circular curvature curved surface. 如請求項17所述的氣體量測裝置，其中，所述第一反射結構直接連接於所述第二反射結構，以形成一位於所述第一反射結構與所述第二反射結構之間的單一輪廓線。 The gas measuring device of claim 17, wherein the first reflective structure is directly connected to the second reflective structure to form a first reflective structure and the second reflective structure. Single outline. 如請求項17所述的氣體量測裝置，其中，所述發光模組所產生的一光線包括一投射於所述第一反射結構的第一投射光線以及一投射於所述第二反射結構的第二投射光線，其中，所述第一投射光線通過所述第一反射結構的反射，以形成一投射至所述第二焦點的第一反射光線，所述第一反射光線通過所述反射面的反射，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第一接收光線，其中，所述第二投射光線通過 所述第二反射結構的反射，以形成一投射至所述第一反射結構的第二反射光線，所述第二反射光線通過所述第一反射結構的反射，以形成一投射至所述第二焦點的第三反射光線，所述第三反射光線通過所述反射面的反射，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第二接收光線。 The gas measuring device of claim 17, wherein the light generated by the light emitting module comprises a first projected light projected onto the first reflective structure and a projected light projected from the second reflective structure. a second projected ray, wherein the first projected ray is reflected by the first reflective structure to form a first reflected ray that is projected to the second focus, the first reflected ray passing through the reflective surface a reflection to form a first received light that is projected onto the light sensing unit and received by the light sensing unit, wherein the second projected light passes The second reflective structure is reflective to form a second reflected light that is projected onto the first reflective structure, and the second reflected light is reflected by the first reflective structure to form a projection to the first a third reflected light of the second focus, the third reflected light being reflected by the reflective surface to form a second received light that is projected onto the light sensing unit and received by the light sensing unit. 如請求項17所述的氣體量測裝置，其中，所述第二採樣腔包括一第一開口、一對應於所述第一開口的第二開口、一第一表面以及一對應於所述第一表面的第二表面，所述第一開口連接於所述轉折部，所述第二開口連接於所述容置腔體，所述第一開口的所述第一表面及所述第二表面之間具有一第一預定距離，所述第二開口的所述第一表面及所述第二表面之間具有一第二預定距離，所述第二預定距離大於所述第一預定距離。 The gas measuring device of claim 17, wherein the second sampling chamber comprises a first opening, a second opening corresponding to the first opening, a first surface, and a corresponding to the first a second surface of the surface, the first opening is connected to the turning portion, the second opening is connected to the receiving cavity, the first surface and the second surface of the first opening There is a first predetermined distance between the first surface and the second surface of the second opening, and the second predetermined distance is greater than the first predetermined distance. 如請求項24所述的氣體量測裝置，其中，所述腔體模組還進一步包括一設置於所述第二採樣腔及所述容置腔體之間的導光部，鄰近於所述第二開口的所述第二表面與所述光感測單元之間具有一預定高度，所述預定高度及所述第二預定距離符合下列公式：(0.8*L2)≦H≦(3*L2)，其中H為所述預定高度，L2為所述第二預定距離。 The gas measuring device of claim 24, wherein the cavity module further comprises a light guiding portion disposed between the second sampling chamber and the accommodating cavity, adjacent to the The second surface of the second opening and the light sensing unit have a predetermined height, and the predetermined height and the second predetermined distance meet the following formula: (0.8*L2) ≦H≦ (3*L2 ), where H is the predetermined height and L2 is the second predetermined distance. 如請求項17所述的氣體量測裝置，其中，所述腔體模組還進一步包括一設置於所述第二採樣腔及所述容置腔體之間的導光部，所述導光部具有一導光面，所述導光面相對於一水平軸線傾斜一介於30度至60度之間的預定角度。 The gas measuring device of claim 17, wherein the cavity module further comprises a light guiding portion disposed between the second sampling chamber and the accommodating cavity, the light guiding The portion has a light guiding surface that is inclined with respect to a horizontal axis by a predetermined angle between 30 degrees and 60 degrees. 如請求項17所述的氣體量測裝置，其中，所述腔體模組還進一步包括一設置於所述第二採樣腔及所述容置腔體之間的導光部以及一開槽，所述開槽連接於所述導光部及所述容置腔體之間，所述第二採樣腔具有一第一表面及一第二表面，所述開槽具有一預定寬度，所述第二採樣腔的所述第二表面及所述光感測單元之間具有一預定高度，所述預定寬度及所述預定高度 符合下列公式：(0.8*W)≦H≦(3*W)，其中H為所述預定高度，W為所述預定寬度。 The gas measuring device of claim 17, wherein the cavity module further comprises a light guiding portion disposed between the second sampling chamber and the accommodating cavity, and a slot. The slot is connected between the light guiding portion and the receiving cavity, the second sampling chamber has a first surface and a second surface, and the slot has a predetermined width, the first Between the second surface of the two sampling chambers and the light sensing unit, a predetermined height, the predetermined width and the predetermined height The following formula is met: (0.8*W) ≦H ≦ (3*W), where H is the predetermined height and W is the predetermined width. 如請求項17所述的氣體量測裝置，其中，所述發光模組為紅外線發光器，所述光感測模組為紅外線光感測器。 The gas measuring device of claim 17, wherein the light emitting module is an infrared light emitting device, and the light sensing module is an infrared light sensor. 如請求項17所述的氣體量測裝置，其中，所述聚光腔體還進一步具有一連接於所述第一反射結構的第三反射結構，所述第一反射結構設置於所述第二反射結構與所述第三反射結構之間。 The gas measuring device of claim 17, wherein the concentrating cavity further has a third reflective structure connected to the first reflective structure, the first reflective structure being disposed at the second Between the reflective structure and the third reflective structure. 如請求項29所述的氣體量測裝置，其中，所述第三反射結構具有一拋物線曲率曲面。 The gas measuring device of claim 29, wherein the third reflecting structure has a parabolic curvature curved surface. 如請求項29所述的氣體量測裝置，其中，所述發光模組所產生的一光線包括一投射於所述第一反射結構的第一投射光線、一投射於所述第二反射結構的第二投射光線以及一投射於所述第三反射結構的第三投射光線，其中，所述第一投射光線通過所述第一反射結構的反射，以形成一投射至所述第二焦點的第一反射光線，所述第一反射光線通過所述反射面的反射，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第一接收光線，其中，所述第二投射光線通過所述第二反射結構的反射，以形成一投射至所述第一反射結構的第二反射光線，所述第二反射光線通過所述第一反射結構的反射，以形成一投射至所述第二焦點的第三反射光線，所述第三反射光線通過所述反射面的反射，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第二接收光線，其中，所述第三投射光線通過所述第三反射結構的反射，以形成一投射至所述反射面上的第四反射光線，所述第四反射光線通過所述反射面的反射，以形成一投射至所述光感測單元上而被所述光感測單元所接收的第三接收光線。 The gas measuring device of claim 29, wherein the light generated by the light emitting module comprises a first projected light projected onto the first reflective structure and a second projected reflective structure a second projected ray and a third projected ray projected onto the third reflective structure, wherein the first projected ray passes through the reflection of the first reflective structure to form a projection to the second focus a reflected light, the first reflected light is reflected by the reflective surface to form a first received light that is projected onto the light sensing unit and received by the light sensing unit, wherein The second projected light is reflected by the second reflective structure to form a second reflected light that is projected onto the first reflective structure, and the second reflected light is reflected by the first reflective structure to form a Projecting a third reflected ray to the second focus, the third reflected ray being reflected by the reflective surface to form a projection onto the photo sensing unit for reception by the photo sensing unit First Receiving light, wherein the third projected light passes through the reflection of the third reflective structure to form a fourth reflected light that is projected onto the reflective surface, and the fourth reflected light passes through the reflective surface Forming a third received light that is projected onto the light sensing unit and received by the light sensing unit.