TWI650860B - Organic light-emitting diode panel and manufacturing method thereof - Google Patents
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Abstract
本發明提供一種有機發光二極體面板及其製造方法。此有機發光二極體面板包括至少一像素，此像素包括一陽極層、一絕緣層、一發光材料層以及一參考電壓層。陽極層配置於一透明基板上。絕緣層配置於陽極層上，具有一第一凹坑以及一第二凹坑，以分別暴露陽極層以及陰極層。第一凹坑內包括一電洞注入層以及一電洞傳輸層。電洞注入層配置於陽極層上。電洞傳輸層配置於電洞注入層上。第二凹坑內包括一陰極層、一電子注入層以及一電子傳輸層。陰極層配置於第二凹坑的底部上。電子注入層配置於陰極層上。電子傳輸層配置於該電子注入層上。參考電壓層配置於第一凹坑與第二凹坑之間，且配置於發光材料層之下。 The invention provides an organic light emitting diode panel and a manufacturing method thereof. The OLED panel includes at least one pixel including an anode layer, an insulating layer, a luminescent material layer, and a reference voltage layer. The anode layer is disposed on a transparent substrate. The insulating layer is disposed on the anode layer and has a first pit and a second pit to expose the anode layer and the cathode layer, respectively. The first pit includes a hole injection layer and a hole transport layer. The hole injection layer is disposed on the anode layer. The hole transport layer is disposed on the hole injection layer. The second pit includes a cathode layer, an electron injection layer, and an electron transport layer. The cathode layer is disposed on the bottom of the second pit. The electron injection layer is disposed on the cathode layer. An electron transport layer is disposed on the electron injection layer. The reference voltage layer is disposed between the first pit and the second pit and disposed under the luminescent material layer.
Description
本發明係關於一種有機發光二極體面板及其製造方法，特別是，本發明係關於一種平面式(In-Plane)有機發光二極體面板及其製造方法。 The present invention relates to an organic light emitting diode panel and a method of fabricating the same, and more particularly to a planar (In-Plane) organic light emitting diode panel and a method of fabricating the same.
一般而言，有機發光二極體(Organic Light-Emitting Diode，OLED)元件，其內部所蒸鍍的有機材料層是採用垂直堆疊的結構。如第1圖所示，為先前技術的有機發光二極體元件的結構圖。此有機發光二極體元件包括一玻璃基底100、一陽極層101、電洞注入層102、一電洞傳輸層103、一有機發光材料層104、一電子傳輸層105與一電子注入層106以及一陰極層107。第1圖上還標注了這些層的厚度。 In general, an organic light-emitting diode (OLED) element in which an organic material layer is vapor-deposited inside is vertically stacked. As shown in Fig. 1, it is a structural diagram of a prior art organic light emitting diode element. The organic light emitting diode device includes a glass substrate 100, an anode layer 101, a hole injection layer 102, a hole transport layer 103, an organic light emitting material layer 104, an electron transport layer 105 and an electron injection layer 106, and A cathode layer 107. The thickness of these layers is also indicated on Figure 1.
此先前技術中，存在了下列缺點： In this prior art, the following disadvantages exist:
(1)因為所有的有機材料厚度相當薄，約1000~2000Å，陽極與陰極之間容易短路，造成有機發光二極體顯示器有點缺陷、異常大電流及生產良率降低 等問題。 (1) Because all organic materials are quite thin, about 1000~2000Å, the anode and cathode are easily short-circuited, resulting in a defect in the organic light-emitting diode display, abnormal high current and reduced production yield. And other issues.
(2)若做成底部發光(Bottom Emission)結構，受限於薄膜電晶體(Thin Film Transistor，TFT)的玻璃基板的開口率低，有亮度不足問題。 (2) If the Bottom Emission structure is used, the aperture ratio of the glass substrate which is limited by the Thin Film Transistor (TFT) is low, and there is a problem of insufficient brightness.
(3)若做成頂部發光(Top Emission)必須找到陰極的材料要有高透明度及高導電度的限制。又，陰極材料一般是金屬，若做的太薄，造成阻抗過高，若做的過厚，造成發光效率不高。 (3) If the top Emission must be found, the material of the cathode must have high transparency and high conductivity. Moreover, the cathode material is generally metal. If it is made too thin, the impedance is too high, and if it is too thick, the luminous efficiency is not high.
第2圖繪示為先前技術的白光有機發光二極體元件的結構圖。請參考第2圖，標號201是白光有機發光二極體元件的等效電路圖。在先前技術中，白光有機發光二極體元件係利用紅色、綠色、藍色三個顏色的有機發光二極體元件垂直堆疊在一起。由於三個有機發光二極體201係串聯，因此，在應用時，所須的外加電壓也必須跟著提高數倍。 FIG. 2 is a structural diagram of a white light organic light emitting diode element of the prior art. Referring to FIG. 2, reference numeral 201 is an equivalent circuit diagram of a white light organic light emitting diode element. In the prior art, the white light organic light emitting diode elements are vertically stacked together using organic light emitting diode elements of three colors of red, green, and blue. Since the three organic light-emitting diodes 201 are connected in series, the applied voltage must be increased several times in application.
另外，現今的有機發光二極體材料之發光效率取決於流經發光材料層的大小，但是，往往不同顏色的發光材料層之材料最佳的發光效率所需的電流大小也不同，採用串聯結構(垂直堆疊)流經每層的電流大小是相同的，很難取得一個電流值是適用於所有顏色的最佳發光效率。故容易導致白光色偏。再者，在製造傳統串聯式有機發光二極體時，必須將所有有機材料一層一層的蒸鍍上去，如此，製造成本將隨堆疊層數增加而跟著提高。 In addition, the luminous efficiency of the current organic light-emitting diode material depends on the size of the layer flowing through the light-emitting material, but the current required for the optimum luminous efficiency of the material of the different color light-emitting material layers is also different, and the series structure is adopted. The size of the current flowing through each layer (vertical stacking) is the same, and it is difficult to obtain a current value that is the optimum luminous efficiency for all colors. Therefore, it is easy to cause white light color shift. Furthermore, in the manufacture of a conventional tandem organic light-emitting diode, all organic materials must be vapor-deposited layer by layer, so that the manufacturing cost will increase as the number of stacked layers increases.
本發明的一目的在於提供一種有機發光二極體面板及其製造方法，用以改變現有有機發光二極體的架構，達到發光效率高、提升生產良率，且減低電路複雜度等。 An object of the present invention is to provide an organic light emitting diode panel and a manufacturing method thereof for changing the structure of the existing organic light emitting diode, achieving high luminous efficiency, improving production yield, and reducing circuit complexity.
有鑒於此，本發明提供一種有機發光二極體面板，此有機發光二極體面板包括至少一像素，其中，此像素包括一陽極層、一第一絕緣層、一陰極層、一第二絕緣層、一第一凹坑、一第二凹坑、一參考電壓層、一電洞注入層、一電洞傳輸層、一電子注入層、一電子傳輸層以及一發光材料層。陽極層配置於一透明基板上。第一絕緣層配置於陽極層上。陰極層配置該第一絕緣層上。第二絕緣層配置於陽極層上。第一凹坑貫穿第一絕緣層及第二絕緣層，以暴露該陽極層。第二凹坑貫穿第二絕緣層，以暴露該陰極層。參考電壓層配置在第一凹坑與第二凹坑之間。在一實施中，第三絕緣層配置於第二絕緣層上，並覆蓋參考電壓層。 In view of the above, the present invention provides an organic light emitting diode panel including at least one pixel, wherein the pixel includes an anode layer, a first insulating layer, a cathode layer, and a second insulating layer. a layer, a first pit, a second pit, a reference voltage layer, a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and a luminescent material layer. The anode layer is disposed on a transparent substrate. The first insulating layer is disposed on the anode layer. The cathode layer is disposed on the first insulating layer. The second insulating layer is disposed on the anode layer. The first recess penetrates the first insulating layer and the second insulating layer to expose the anode layer. The second recess penetrates the second insulating layer to expose the cathode layer. The reference voltage layer is disposed between the first pit and the second pit. In one implementation, the third insulating layer is disposed on the second insulating layer and covers the reference voltage layer.
電洞注入層配置於第一凹坑內，且配置於陽極層上。電洞傳輸層配置於第一凹坑內，且配置於電洞注入層上。電子注入層配置於第二凹坑內，且配置於陰極層上。電子傳輸層配置於第二凹坑內，且配置於電子注入層上。發光材料層配置於電洞傳輸層、電子傳輸層和第二絕緣層上，其中，陰極層、陽極層以及參考電壓層構成三端點有機發光二極體。 The hole injection layer is disposed in the first pit and disposed on the anode layer. The hole transport layer is disposed in the first pit and disposed on the hole injection layer. The electron injection layer is disposed in the second pit and disposed on the cathode layer. The electron transport layer is disposed in the second pit and disposed on the electron injection layer. The luminescent material layer is disposed on the hole transport layer, the electron transport layer and the second insulating layer, wherein the cathode layer, the anode layer and the reference voltage layer constitute a three-terminal organic light-emitting diode.
依照本發明較佳實施例所述之有機發光二極體面板，上述像素更包括一薄膜電晶體以及一電容。薄膜電晶體包括一閘極、一第一源汲極以及一第二源汲極，其中，薄膜電晶體的閘極耦接一掃描線，薄膜電晶體的第一源汲極耦接一資料線，薄膜電晶體的第二源汲極耦接該參考電壓層。電容包括一第一端以及一第二端，其中，電容的第一端耦接該薄膜電晶體的第二源汲極，電容的第二端耦接一共接電壓。另外，在一較佳實施例中，參考電壓層之材料為一金屬導體。再者，在一較佳實施例中，參考電壓層的電壓用以控制透過發光材料層由陽極層流向陰極層的一電流之大小與該電流流過發光材料層的電流大小。 According to the organic light emitting diode panel of the preferred embodiment of the invention, the pixel further includes a thin film transistor and a capacitor. The thin film transistor includes a gate, a first source drain, and a second source drain. The gate of the thin film transistor is coupled to a scan line, and the first source drain of the thin film transistor is coupled to a data line. The second source drain of the thin film transistor is coupled to the reference voltage layer. The capacitor includes a first end and a second end, wherein the first end of the capacitor is coupled to the second source drain of the thin film transistor, and the second end of the capacitor is coupled to a common voltage. Additionally, in a preferred embodiment, the material of the reference voltage layer is a metal conductor. Moreover, in a preferred embodiment, the voltage of the reference voltage layer is used to control the magnitude of a current flowing from the anode layer to the cathode layer through the layer of luminescent material and the magnitude of the current flowing through the layer of luminescent material.
依照本發明較佳實施例所述之有機發光二極體面板，上述像素更包括一低阻抗導體層，配置於該發光材料層上，藉由電流的分流，避免有機發光二極體像素的崩潰。在另一實施例中，藉由將發光材料層進行摻雜雜質，例如施體(Donor)雜質或受體(Acceptor)雜質，避免流經發光材料層之電流過度偏向下側，避免有機發光二極體像素的崩潰。 According to the OLED panel of the preferred embodiment of the present invention, the pixel further includes a low-impedance conductor layer disposed on the luminescent material layer to prevent the collapse of the organic light-emitting diode pixel by current shunting. . In another embodiment, by doping the luminescent material layer with impurities, such as Donor impurities or acceptor impurities, the current flowing through the luminescent material layer is prevented from being excessively biased to the lower side to avoid organic luminescence. The breakdown of polar pixels.
本發明另外提供一種有機發光二極體面板之製造方法，此有機發光二極體面板之製造方法包括下列步驟：在一透明基板上，依序形成一陽極層、一第一絕層、一陰極層、一第二絕緣層、一參考電壓層；對第一絕緣層、第二絕緣層進行蝕刻，產生一第一凹坑以及一第 二凹坑，分別暴露上述陽極層和上述陰極層，其中，參考電壓層配置在第一凹坑以及第二凹坑之間；在第一凹坑內蒸鍍一電洞注入層，其中，電洞注入層配置於陽極層上；在電洞注入層上蒸鍍一電洞傳輸層；在陰極層上蒸鍍一電子注入層；在電子注入層上蒸鍍一電子傳輸層；在電洞傳輸層、電子傳輸層和絕緣層上蒸鍍一發光材料層；以及在發光材料層上配置一低阻抗有基材料、透明導電層或薄金層。 The invention further provides a method for manufacturing an organic light emitting diode panel. The method for manufacturing the organic light emitting diode panel comprises the steps of: sequentially forming an anode layer, a first layer, and a cathode on a transparent substrate. a layer, a second insulating layer, a reference voltage layer; etching the first insulating layer and the second insulating layer to generate a first pit and a first a dimple, respectively exposing the anode layer and the cathode layer, wherein a reference voltage layer is disposed between the first pit and the second pit; and a hole injection layer is vapor-deposited in the first pit, wherein The hole injection layer is disposed on the anode layer; a hole transport layer is evaporated on the hole injection layer; an electron injection layer is evaporated on the cathode layer; an electron transport layer is evaporated on the electron injection layer; and the electron transport layer is transported on the electron injection layer; Depositing a layer of luminescent material on the layer, the electron transport layer and the insulating layer; and disposing a low-impedance base material, a transparent conductive layer or a thin gold layer on the luminescent material layer.
依照本發明較佳實施例所述之有機發光二極體面板之製造方法，上述發光材料層係混和至少兩種不同顏色的有機發光材料。再者，在一較佳實施例中，陽極層包含由摻雜錫之氧化銦的材料所構成。 According to a method of fabricating an organic light-emitting diode panel according to a preferred embodiment of the present invention, the light-emitting material layer is mixed with at least two organic light-emitting materials of different colors. Furthermore, in a preferred embodiment, the anode layer comprises a material that is doped with tin indium oxide.
依照本發明較佳實施例所述之有機發光二極體面板之製造方法，更包括下列步驟：在該發光材料層上配置一低阻抗導體層，藉由電流的分流，避免有機發光二極體像素的崩潰。在另一實施例中，有機發光二極體面板之製造方法，更包括下列步驟：對該發光材料層進行雜質摻雜，例如施體(Donor)雜質或受體(Acceptor)雜質。藉此，讓上層發光子材料層之導電載子濃度高於下層發光子材料層之導電載子濃度，避免電流只往最低處流，避免有機發光二極體像素的崩潰。 The method for fabricating an organic light-emitting diode panel according to the preferred embodiment of the present invention further includes the steps of: arranging a low-impedance conductor layer on the luminescent material layer to avoid organic light-emitting diodes by current shunting The pixel crashes. In another embodiment, the method of fabricating an organic light-emitting diode panel further includes the step of impurity doping the luminescent material layer, such as a Donor impurity or an acceptor impurity. Thereby, the concentration of the conductive carrier of the upper layer of the illuminating material layer is higher than the concentration of the conductive carrier of the layer of the lower layer of the illuminating sub-material, so as to prevent the current from flowing to the lowest point and avoid the collapse of the pixel of the organic luminescent diode.
本發明的精神在於利用改變有機發光二極體面板的像素之架構，將原本垂直堆疊製程的有機發光二極體像素，改為平面(In-Plane)製程，增加開口率， 並且在絕緣層之間，嵌入一層參考電壓層，藉由此參考電壓層，控制發光材料層上的電流路徑，讓有機發光二極體像素可以達到類似三端元件的控制模式，藉此，若以此改良的有機發光二極體像素實施成為主動矩陣面板，每一個像素可以減少一個薄膜電晶體的使用。如此，將大大減少製程與電路控制複雜度，同時也降低了製造成本。再者，由於參考電壓層是埋在發光材料層下方，故能增加發光效率，且參考電壓層的使用材料可以更加多元化。 The spirit of the present invention is to change the aperture of the organic light-emitting diode of the original vertical stacking process to the in-plane process by using the structure of the pixel of the organic light-emitting diode panel to increase the aperture ratio. And interposing a layer of reference voltage between the insulating layers, thereby controlling the current path on the layer of the luminescent material by the reference voltage layer, so that the OLED pixel can achieve a control mode similar to the three-terminal element, thereby The improved organic light-emitting diode pixel is implemented as an active matrix panel, and each pixel can reduce the use of a thin film transistor. In this way, the complexity of the process and circuit control will be greatly reduced, and the manufacturing cost will also be reduced. Furthermore, since the reference voltage layer is buried under the luminescent material layer, the luminous efficiency can be increased, and the material used for the reference voltage layer can be more diversified.
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。 The above and other objects, features and advantages of the present invention will become more <RTIgt;
100‧‧‧玻璃基底 100‧‧‧ glass substrate
101、300、701、1003‧‧‧陽極層 101, 300, 701, 1003‧‧‧ anode layer
102、303、709‧‧‧電洞注入層 102, 303, 709‧‧‧ hole injection layer
103、304、710‧‧‧電洞傳輸層 103, 304, 710‧‧‧ hole transport layer
104‧‧‧有機發光材料層 104‧‧‧layer of organic light-emitting material
105‧‧‧電子傳輸層 105‧‧‧Electronic transport layer
106‧‧‧電子注入層 106‧‧‧electron injection layer
107、305、703、1008‧‧‧陰極層 107, 305, 703, 1008‧‧‧ cathode layer
201‧‧‧白光有機發光二極體元件的等效電路圖 201‧‧‧Equivalent circuit diagram of white organic light-emitting diode components
30、1000‧‧‧透明基板 30, 1000‧‧‧ Transparent substrate
301、702、1006‧‧‧第一絕緣層 301, 702, 1006‧‧‧ first insulation
302、704、1014‧‧‧第二絕緣層 302, 704, 1014‧‧‧Second insulation
306、711‧‧‧電子注入層 306, 711‧‧‧electron injection layer
307、712‧‧‧電子傳輸層 307, 712‧‧‧ electron transport layer
308、713‧‧‧發光材料層 308, 713‧‧‧ luminescent material layer
309、707、1018‧‧‧第一凹坑 309, 707, 1018‧‧‧ first pit
310、708、1019‧‧‧第二凹坑 310, 708, 1019‧‧‧ second pit
Vref‧‧‧參考電壓 Vref‧‧‧reference voltage
320、705、1016‧‧‧參考電壓層 320, 705, 1016‧‧‧ reference voltage layer
321、706、1017‧‧‧第三絕緣層 321, 706, 1017‧‧‧ third insulation layer
322‧‧‧崩潰現象(Breakdown) 322‧‧‧Crash (Breakdown)
S701~S712、S801、S901、S1000~S1012‧‧‧製作有機發光二極體面板像素的流程步驟 S701~S712, S801, S901, S1000~S1012‧‧‧ Process steps for fabricating organic light-emitting diode panel pixels
401‧‧‧施體(Donor)雜質或受體(Acceptor)雜質 401‧‧‧ Donor impurity or acceptor impurity
500‧‧‧低電阻的材料 500‧‧‧Low-resistance materials
601‧‧‧薄膜電晶體 601‧‧‧film transistor
603‧‧‧電容 603‧‧‧ Capacitance
602‧‧‧有機發光二極體像素 602‧‧‧Organic LEDs
61‧‧‧陽極 61‧‧‧Anode
62‧‧‧陰極 62‧‧‧ cathode
63‧‧‧參考電壓極 63‧‧‧reference voltage pole
701‧‧‧陽極層 701‧‧‧anode layer
MSK1、MSK2‧‧‧金屬遮罩 MSK1, MSK2‧‧‧ metal mask
1001‧‧‧非晶矽 1001‧‧‧Amorphous
1002‧‧‧薄膜氧化層 1002‧‧‧Thin film oxide layer
1004‧‧‧閘極電極 1004‧‧‧ gate electrode
1005‧‧‧第一電極 1005‧‧‧first electrode
1007、1015‧‧‧介層窗 1007, 1015‧‧‧ via window
1009‧‧‧第二電極 1009‧‧‧second electrode
1010‧‧‧源極線 1010‧‧‧ source line
1011‧‧‧電源電壓線 1011‧‧‧Power voltage line
1012‧‧‧共接電壓線 1012‧‧‧Common voltage line
1013‧‧‧參考電壓線 1013‧‧‧reference voltage line
第1圖繪示為先前技術的有機發光二極體元件的結構圖。 FIG. 1 is a structural diagram of a prior art organic light emitting diode element.
第2圖繪示為先前技術的白光有機發光二極體元件的結構圖。 FIG. 2 is a structural diagram of a white light organic light emitting diode element of the prior art.
第3圖繪示為本發明一較佳實施例的有機發光二極體面板之像素的結構圖。 FIG. 3 is a structural diagram of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention.
第4圖繪示為本發明一較佳實施例的有機發光二極體面板之像素的發光材料層308之結構示意圖。 FIG. 4 is a schematic structural view of a light-emitting material layer 308 of a pixel of an organic light-emitting diode panel according to a preferred embodiment of the present invention.
第5圖繪示為本發明一較佳實施例的有機發光二極體面板之像素之結構示意圖。 FIG. 5 is a schematic structural view of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention.
第6圖繪示為本發明一較佳實施例的有機發光二極體面板之像素的等效電路圖。 FIG. 6 is an equivalent circuit diagram of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention.
第7圖繪示為本發明一較佳實施例的第4圖之有機發光二極體面板之像素的製作方法之流程圖。 FIG. 7 is a flow chart showing a method of fabricating a pixel of the organic light emitting diode panel of FIG. 4 according to a preferred embodiment of the present invention.
第7A圖繪示為有機發光二極體面板之像素的製作方法之步驟S701的示意圖。 FIG. 7A is a schematic diagram showing a step S701 of a method for fabricating a pixel of an organic light emitting diode panel.
第7B圖繪示為有機發光二極體面板之像素的製作方法之步驟S702的示意圖。 FIG. 7B is a schematic diagram showing a step S702 of a method for fabricating a pixel of an organic light emitting diode panel.
第7C圖繪示為有機發光二極體面板之像素的製作方法之步驟S703的示意圖。 FIG. 7C is a schematic diagram showing the step S703 of the method for fabricating the pixels of the organic light emitting diode panel.
第7D圖繪示為有機發光二極體面板之像素的製作方法之步驟S704的示意圖。 FIG. 7D is a schematic diagram showing the step S704 of the method for fabricating the pixels of the organic light emitting diode panel.
第7E圖繪示為有機發光二極體面板之像素的製作方法之步驟S705的示意圖。 FIG. 7E is a schematic diagram showing a step S705 of a method for fabricating a pixel of an organic light emitting diode panel.
第7F圖繪示為有機發光二極體面板之像素的製作方法之步驟S706的示意圖。 FIG. 7F is a schematic diagram showing the step S706 of the method for fabricating the pixels of the organic light emitting diode panel.
第7G圖繪示為有機發光二極體面板之像素的製作方法之步驟S707的示意圖。 FIG. 7G is a schematic diagram showing the step S707 of the method for fabricating the pixels of the organic light emitting diode panel.
第7H圖繪示為有機發光二極體面板之像素的製作方法之步驟S708的示意圖。 FIG. 7H is a schematic diagram showing a step S708 of a method for fabricating a pixel of an organic light emitting diode panel.
第7I圖繪示為有機發光二極體面板之像素的製作方法之步驟S709的示意圖。 FIG. 7I is a schematic diagram showing a step S709 of a method for fabricating a pixel of an organic light emitting diode panel.
第7J圖繪示為有機發光二極體面板之像素的製作方法之步驟S710的示意圖。 FIG. 7J is a schematic diagram showing a step S710 of a method for fabricating a pixel of an organic light emitting diode panel.
第7K圖繪示為有機發光二極體面板之像素的製作方法之步驟S711的示意圖。 FIG. 7K is a schematic diagram showing the step S711 of the method for fabricating the pixels of the organic light emitting diode panel.
第7L圖繪示為有機發光二極體面板之像素的製作方法之步驟S712的示意圖。 FIG. 7L is a schematic diagram showing the step S712 of the method for fabricating the pixels of the organic light emitting diode panel.
第8圖繪示為有機發光二極體面板之像素的製作方法之簡化流程圖。 FIG. 8 is a simplified flow chart showing a method of fabricating a pixel of an organic light emitting diode panel.
第9圖繪示為有機發光二極體面板之像素的製作方法之簡化流程圖。 FIG. 9 is a simplified flow chart showing a method of fabricating a pixel of an organic light emitting diode panel.
第10圖繪示為本發明一較佳實施例的第7圖之有機發光二極體面板之像素的製作方法之流程圖。 FIG. 10 is a flow chart showing a method of fabricating a pixel of the organic light emitting diode panel of FIG. 7 according to a preferred embodiment of the present invention.
第10A圖繪示為本發明一較佳實施例之有機發光二極體面板之像素的俯視圖以及剖面圖。 FIG. 10A is a top view and a cross-sectional view of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention.
第10B圖繪示為本發明另一較佳實施例之有機發光二極體面板之像素的俯視圖以及剖面圖。 FIG. 10B is a top view and a cross-sectional view of a pixel of an organic light emitting diode panel according to another preferred embodiment of the present invention.
在實施例與申請專利範圍中，空間相對術語，如“在...之下”，“以下”，“下”，“上方”，“上”等詞彙，可以在本文中用於便於描述，以描述一個元件或特徵的相對於另一元件(多個)或特徵(多個特徵)在圖所示中的對應關係。所屬技術領域具有通常知識者可以理解，除了在附圖中描述的方向，空間相對術語旨在涵蓋裝置在使用或操作不同方向。舉例來說，如果裝置在圖 中被翻轉，則被描述為“下方”或“之下”的元件或特徵將被定向為“上方”，因此，“下方”示範性術語可以包括上方和下方的方位。若所述裝置可被另外定位(旋轉90度或在其它方位)，上述的空間相對術語在此則用以作為所使用的空間相對描述做出相應的解釋。 In the scope of the embodiments and claims, spatially relative terms such as "under", "below", "lower", "above", "upper" and the like may be used herein for convenience of description. The correspondence of one element or feature to another element(s) or feature(s) is illustrated in the figures. It will be understood by those of ordinary skill in the art that the spatially relative terms are intended to encompass different orientations of the device in use or operation. For example, if the device is in the picture Elements or features that are described as "below" or "below" will be referred to as "above", and thus, "lower" exemplary terms may include the orientations above and below. If the device can be additionally positioned (rotated 90 degrees or at other orientations), the spatially relative terms described above are used herein to provide a corresponding interpretation of the spatial relative description used.
第3圖繪示為本發明一較佳實施例的有機發光二極體面板之像素的結構圖。請參考第3圖，此像素陽極和陰極以非垂直堆疊的方式配置。此像素包括一陽極層300、一第一絕緣層301、第二絕緣層302、一電洞注入層(Hole Injection Layer，HIL)303、一電洞傳輸層(Hole Transport Layer，HTL)304、一陰極層305、一電子注入層(Electron Injection Layer，EIL)306、一電子傳輸層(Electron Transport Layer，ETL)307、一發光材料層(Emission Layer，EML)308、第三絕緣層321以及一參考電壓層320。 FIG. 3 is a structural diagram of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention. Referring to Figure 3, the pixel anode and cathode are arranged in a non-vertical stack. The pixel includes an anode layer 300, a first insulating layer 301, a second insulating layer 302, a Hole Injection Layer (HIL) 303, a Hole Transport Layer (HTL) 304, and a pixel. a cathode layer 305, an electron injection layer (EIL) 306, an electron transport layer (ETL) 307, an illuminating material layer (EML) 308, a third insulating layer 321 and a reference Voltage layer 320.
陽極層300配置於一透明基板30上。第一絕緣層301，配置於陽極層300上，陰極層305配置在第一絕緣層301上，第二絕緣層302配置於第一絕緣層301與陰極層305上。參考電壓層320配置在第二絕緣層302與第三絕緣層321之間。第一絕緣層301、第二絕緣層302與第三絕緣層321具有一第一凹坑309以及一第二凹坑310，上述參考電壓層320配置在第一凹坑309與第二凹坑310之間。又，在第一凹坑309內具有電洞注入層303與電洞傳輸層304。在第二凹坑310內，由下而上分 別是陰極層305、電子注入層306以及電子傳輸層307。另外，在第二絕緣層302與第一凹坑309及第二凹坑310上配置了發光材料層308。 The anode layer 300 is disposed on a transparent substrate 30. The first insulating layer 301 is disposed on the anode layer 300, the cathode layer 305 is disposed on the first insulating layer 301, and the second insulating layer 302 is disposed on the first insulating layer 301 and the cathode layer 305. The reference voltage layer 320 is disposed between the second insulating layer 302 and the third insulating layer 321. The first insulating layer 301, the second insulating layer 302, and the third insulating layer 321 have a first recess 309 and a second recess 310. The reference voltage layer 320 is disposed on the first recess 309 and the second recess 310. between. Further, a hole injection layer 303 and a hole transport layer 304 are provided in the first pit 309. In the second pit 310, from bottom to top Others are the cathode layer 305, the electron injection layer 306, and the electron transport layer 307. Further, a luminescent material layer 308 is disposed on the second insulating layer 302, the first pit 309, and the second pit 310.
由此實施例可以看出，發光材料層可以是配置於平面的方式達到頂部發光(Top emission)的發光方式。此參考電壓層320用來作為參考電壓電極(Reference Electrode)。在控制此像素時，在此參考電壓層320上額外施加參考電壓Vref，此參考電壓Vref將引發此像素的發光材料層308產生更多的少數載子電荷，因此，讓發光材料層308中的電子與電洞更容易結合而產生光子，所以可以用比較低的陽極對陰極之電壓，使像素發光。同時，也提高了像素的發光效率。 It can be seen from this embodiment that the luminescent material layer can be a luminescent mode that is disposed in a planar manner to achieve a top emission. This reference voltage layer 320 is used as a reference electrode. When the pixel is controlled, a reference voltage Vref is additionally applied to the reference voltage layer 320. This reference voltage Vref will cause the luminescent material layer 308 of the pixel to generate more minority carrier charges, thus allowing the luminescent material layer 308 to Electrons and holes are easier to combine to produce photons, so the lower anode-to-cathode voltage can be used to illuminate the pixels. At the same time, the luminous efficiency of the pixel is also improved.
另外，在此實施例中，在發光材料層308的下方以及第一凹坑309與第二凹坑310之間，額外配置了一個參考電壓層320。由於此參考電壓層320係配置在發光材料層308的下方，並不會影響發光效率，故此參考電壓層320的材料可以有更多樣化的選擇。例如，參考電壓層可以是透明或者不透明的導電層。再者，本發明的實施例增加製程穩定度、提高製程良率、降低製造成本、降低對發光材料層308被破壞的可能性，進而改善產品的可靠性。 In addition, in this embodiment, a reference voltage layer 320 is additionally disposed under the luminescent material layer 308 and between the first pit 309 and the second recess 310. Since the reference voltage layer 320 is disposed under the luminescent material layer 308 and does not affect the illuminating efficiency, the material of the reference voltage layer 320 can have a more diverse selection. For example, the reference voltage layer can be a transparent or opaque conductive layer. Furthermore, embodiments of the present invention increase process stability, increase process yield, reduce manufacturing costs, reduce the likelihood of damage to the luminescent material layer 308, and thereby improve product reliability.
在此實施例中，由於參考電壓層320係配置在發光材料層308的下方，當給予參考電壓層320一參考電壓Vref時，可以增加少數載子的電荷注入，達到增 加亮度的效果。然而，在此同時，由於電流會走最短路徑，導致電流會向下偏，在極端的情況下，容易在發光材料層308的下方造成有機發光二極體的崩潰現象322(Breakdown)。為了防止以上的情況，以下分別有幾種方式解決有機發光二極體的崩潰的問題。 In this embodiment, since the reference voltage layer 320 is disposed under the luminescent material layer 308, when the reference voltage layer 320 is given a reference voltage Vref, the charge injection of a minority carrier can be increased. Add brightness effect. However, at the same time, since the current will follow the shortest path, the current will be biased downward, and in an extreme case, the collapse phenomenon 322 (Breakdown) of the organic light-emitting diode is easily caused under the luminescent material layer 308. In order to prevent the above, there are several ways to solve the problem of collapse of the organic light-emitting diode in the following.
第4圖繪示為本發明一較佳實施例的有機發光二極體面板之像素的發光材料層308之結構示意圖。請參考第4圖，在此第4圖中，在原始純的發光材料層308中，摻雜施體(Donor)雜質(N型)或受體(Acceptor)雜質(P型)401的有機材料。在製造上述發光材料層308的同時，蒸鍍具有施體雜質或受體雜質401的有機材料。也可以是在發光材料層308的上方再蒸鍍形成上述施體雜質或受體雜質的有機材料。藉由摻雜製程在發光材料層中的雜質濃度的分佈，可調控發光材料層的電阻值分佈，以調控後續的電流流向。 FIG. 4 is a schematic structural view of a light-emitting material layer 308 of a pixel of an organic light-emitting diode panel according to a preferred embodiment of the present invention. Please refer to FIG. 4, in which the organic material doped with Donor impurity (N type) or acceptor impurity (P type) 401 in the original pure luminescent material layer 308. . The organic material having the donor impurity or the acceptor impurity 401 is vapor-deposited while the above-described light-emitting material layer 308 is being produced. An organic material which forms the above-described donor impurity or acceptor impurity may be further deposited on the luminescent material layer 308. By the distribution of the impurity concentration in the luminescent material layer by the doping process, the resistance value distribution of the luminescent material layer can be regulated to regulate the subsequent current flow direction.
第5圖繪示為本發明一較佳實施例的有機發光二極體面板之像素之結構示意圖。請參考第5圖，在此第5圖中，發光材料層308上方蒸鍍上低電阻的材料500。藉由低電阻的材料500之影響，讓電流分流，使電流不會僅往最短路徑走，進而解決發光二極體崩潰的問題。 FIG. 5 is a schematic structural view of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention. Referring to FIG. 5, in FIG. 5, a low-resistance material 500 is vapor-deposited over the luminescent material layer 308. By the influence of the low-resistance material 500, the current is shunted so that the current does not go only to the shortest path, thereby solving the problem of the LED breakdown.
第6圖繪示為本發明一較佳實施例的有機發光二極體面板之像素的等效電路圖。此等效電路包括一薄膜電晶體601、電容603、以及有機發光二極體像素 602。在此實施例中，有機發光二極體像素602包括一陽極61、一陰極62以及一參考電壓極63。 FIG. 6 is an equivalent circuit diagram of a pixel of an organic light emitting diode panel according to a preferred embodiment of the present invention. The equivalent circuit includes a thin film transistor 601, a capacitor 603, and an organic light emitting diode pixel 602. In this embodiment, the organic light emitting diode pixel 602 includes an anode 61, a cathode 62, and a reference voltage electrode 63.
由上述實施例，可以看出，外加一參考電壓Vref於上述參考電壓層320上，可以增加少數載子的電荷注入。反之，若將外加的參考電壓Vref的電壓極性相反，將會抑制少數載子電荷注入，降低電子與電洞結合產生光子的效率，元件發光亮度下降，甚至無法發光。因此，透過參考電壓Vref之電壓極性以及電壓大小的調整，可以用來作為控制本發明實施例的有機發光二極體像素602是否發光的開關或是控制發光亮度大小等作用。基於此，每一個畫素只需1個薄膜電晶體601，相較於傳統的有機發光二極體面板之像素需要至少兩個薄膜電晶體，本發明可以用比較少的外部元件，達到相同的顯示的效果。另外，上述陽極層300及參考電壓層320例如可以用氧化銦錫(Indium Tin Oxide，ITO)、摻雜氟氣的氧化錫(F2：SnO2，FTO)、摻雜鋁的氧化鋅(ZnO；Al，AZO)、摻雜鎵的氧化鋅(ZnO：Ga，GZO)等方式實施。本發明不以此為限。另外，值得一提的是，陽極層300及參考電壓層320也可以是使用非透明的導電材料。故本發明在材料的使用上更有彈性。 It can be seen from the above embodiment that the addition of a reference voltage Vref to the reference voltage layer 320 can increase the charge injection of a minority carrier. On the contrary, if the voltage of the applied reference voltage Vref is opposite in polarity, the minority carrier charge injection will be suppressed, the efficiency of photons generated by the combination of electrons and holes will be reduced, and the luminance of the component will be lowered or even unable to emit light. Therefore, the adjustment of the voltage polarity and the voltage magnitude of the reference voltage Vref can be used as a switch for controlling whether the organic light-emitting diode pixel 602 of the embodiment of the present invention emits light or for controlling the brightness of the light. Based on this, only one thin film transistor 601 is needed for each pixel, and at least two thin film transistors are required for the pixels of the conventional organic light emitting diode panel. The present invention can achieve the same with relatively few external components. The effect displayed. In addition, the anode layer 300 and the reference voltage layer 320 may be, for example, Indium Tin Oxide (ITO), fluorine-doped tin oxide (F2:SnO2, FTO), or aluminum-doped zinc oxide (ZnO; Al). , AZO), gallium-doped zinc oxide (ZnO: Ga, GZO), etc. The invention is not limited thereto. In addition, it is worth mentioning that the anode layer 300 and the reference voltage layer 320 may also be made of a non-transparent conductive material. Therefore, the present invention is more flexible in the use of materials.
上述的有機發光二極體面板之像素一般是以單一波長光，例如紅光、綠光或藍光做舉例。若要製造為混色光，例如黃光、紫光、白光等，可以利用在原本蒸鍍有機發光材料層的位置蒸鍍不同顏色的有機發光 材料構成讓該有機發光二極體發出混色光的效果。 The pixels of the above-mentioned organic light-emitting diode panel are generally exemplified by single-wavelength light, such as red light, green light or blue light. To produce mixed color light, such as yellow light, violet light, white light, etc., it is possible to vaporize different colors of organic light at the position of the original vapor-deposited organic light-emitting material layer. The material composition allows the organic light-emitting diode to emit mixed color light.
第7圖繪示為本發明一較佳實施例的第3圖之有機發光二極體面板之像素的製作方法之流程圖。其製作方法包括下列步驟： FIG. 7 is a flow chart showing a method of fabricating a pixel of the organic light emitting diode panel of FIG. 3 according to a preferred embodiment of the present invention. The manufacturing method includes the following steps:
步驟S700：開始。 Step S700: Start.
步驟S701：在一玻璃基板30上，配置一陽極層701。如第7A圖所示，第7A圖繪示為有機發光二極體面板之像素的製作方法之步驟S701的示意圖。在其它實施例中，也可以使用可彎曲的軟質透明基板，例如塑膠。 Step S701: An anode layer 701 is disposed on a glass substrate 30. As shown in FIG. 7A, FIG. 7A is a schematic diagram showing a step S701 of a method for fabricating a pixel of an organic light emitting diode panel. In other embodiments, a flexible, flexible substrate, such as a plastic, can also be used.
步驟S702：在陽極層701上，配置一第一絕緣層702，如第7B圖所示。步驟S703：在第一絕緣層上，配置一陰極層703，如第7C圖所示。步驟S704；在第一絕緣層702上，配置一第二絕緣層704，如第7D圖所示。 Step S702: On the anode layer 701, a first insulating layer 702 is disposed as shown in FIG. 7B. Step S703: On the first insulating layer, a cathode layer 703 is disposed as shown in FIG. 7C. Step S704; on the first insulating layer 702, a second insulating layer 704 is disposed as shown in FIG. 7D.
步驟S705：在第二絕緣層704上，配置一參考電壓層705，如第7E圖所示。步驟S706：在第二絕緣層704上，配置一第三絕緣層706，如第7F圖所示。 Step S705: On the second insulating layer 704, a reference voltage layer 705 is disposed as shown in FIG. 7E. Step S706: On the second insulating layer 704, a third insulating layer 706 is disposed as shown in FIG. 7F.
步驟S707：蝕刻上述第一絕緣層702、第二絕緣層704與第三絕緣層706，產生一第一凹坑707以及一第二凹坑708，以分別暴露陽極層701和陰極層703，如第7G圖所示。另外，由於第二凹坑708的底部具有一陰極層703，此陰極層703可以是金屬材質，故不會被蝕刻。 Step S707: etching the first insulating layer 702, the second insulating layer 704 and the third insulating layer 706 to generate a first recess 707 and a second recess 708 to respectively expose the anode layer 701 and the cathode layer 703, such as Figure 7G shows. In addition, since the bottom of the second pit 708 has a cathode layer 703, the cathode layer 703 may be made of a metal material and thus will not be etched.
步驟S708：在第一凹坑707內蒸鍍(evaporating)一電洞注入層709，如第7H圖所示。請參考第7H圖，在蒸鍍時，透過金屬遮罩MSK1，讓電洞注入層的材料準確地蒸鍍進入第一凹坑707內。 Step S708: Evaporating a hole injection layer 709 in the first pit 707 as shown in FIG. 7H. Referring to FIG. 7H, during vapor deposition, the material of the hole injection layer is accurately vapor-deposited into the first pit 707 through the metal mask MSK1.
步驟S709；在電洞注入層上蒸鍍一電洞傳輸層710，如第7I圖所示。請參考第7I圖，在蒸鍍時，透過金屬遮罩MSK1，讓電洞傳輸層的材料準確的蒸鍍進入第一凹坑707內，並堆疊在電洞注入層709上。 Step S709; depositing a hole transport layer 710 on the hole injection layer as shown in FIG. 7I. Referring to FIG. 7I, during vapor deposition, the material of the hole transport layer is accurately vapor-deposited into the first pit 707 through the metal mask MSK1, and stacked on the hole injection layer 709.
步驟S710：在陰極層703上蒸鍍一電子注入層711，如第7J圖所示。請參考第7J圖，在此步驟，金屬遮罩MSK1的開口被平移至第二凹坑708上，之後，進行蒸鍍電子注入層711，讓電子注入層的材料堆疊在陰極層703上。 Step S710: An electron injecting layer 711 is deposited on the cathode layer 703 as shown in Fig. 7J. Referring to FIG. 7J, at this step, the opening of the metal mask MSK1 is translated onto the second pit 708, after which the electron injection layer 711 is evaporated, and the material of the electron injection layer is stacked on the cathode layer 703.
步驟S711：在電子注入層711上蒸鍍一電子傳輸層712，如第7K圖所示。請參考第7K圖，進行蒸鍍電子傳輸層712，讓電子傳輸層712的材料堆疊在電子注入層711上。一般來說，電子注入層711非常薄。此圖式僅為示意圖，並非真實比例。 Step S711: An electron transport layer 712 is evaporated on the electron injection layer 711 as shown in FIG. 7K. Referring to FIG. 7K, the electron transport layer 712 is vapor-deposited, and the material of the electron transport layer 712 is stacked on the electron injection layer 711. Generally, the electron injection layer 711 is very thin. This drawing is only a schematic diagram and is not a true scale.
步驟S712：在第三絕緣層706上蒸鍍一發光材料層713，且此發光材料層713可以是覆蓋在第一凹坑707及第二凹坑708、電洞傳輸層710和電子傳輸層712，如第7L圖所示。請參考第7L圖，發光材料層713同樣是採用蒸鍍的方式製作，故需要換另一金屬遮罩MSK2。一般來說，發光材料層713是紅色、綠色或藍色 的有機發光材料做舉例。若要改為其他顏色，可藉由混合上述紅色、綠色或藍色的有機發光材料進行蒸鍍。 Step S712: depositing a luminescent material layer 713 on the third insulating layer 706, and the luminescent material layer 713 may cover the first pit 707 and the second pit 708, the hole transport layer 710, and the electron transport layer 712. , as shown in Figure 7L. Referring to FIG. 7L, the luminescent material layer 713 is also formed by evaporation, so that another metal mask MSK2 needs to be replaced. In general, the luminescent material layer 713 is red, green or blue. The organic luminescent material is exemplified. If it is changed to another color, it can be vapor-deposited by mixing the above-mentioned red, green or blue organic light-emitting material.
上述實施例中，為了解決三端點有機發光二極體崩潰現象的發生，在本發明中有兩種方式。第8圖繪示為有機發光二極體面板之像素的製作方法之簡化流程圖。請參考第8圖，此有機發光二極體面板之像素的製作方法除上述步驟S700~S712外，還包括下列步驟： In the above embodiment, in order to solve the occurrence of the three-terminal organic light-emitting diode collapse phenomenon, there are two modes in the present invention. FIG. 8 is a simplified flow chart showing a method of fabricating a pixel of an organic light emitting diode panel. Referring to FIG. 8, the method for manufacturing the pixel of the organic light emitting diode panel includes the following steps in addition to the above steps S700 to S712:
步驟S801：在蒸鍍發光材料層同時，進行一摻雜製程。所摻雜的載子可以是具有受體雜質的有機材料或具有施體雜質的有機材料。藉此，可以增加發光材料層上層的導電性，使電流能夠偏向往上層流動。本發明不以此為限。 Step S801: performing a doping process while evaporating the luminescent material layer. The doped carrier may be an organic material having acceptor impurities or an organic material having donor impurities. Thereby, the conductivity of the upper layer of the luminescent material layer can be increased, so that the current can be biased to flow upward. The invention is not limited thereto.
上述實施例是以進行摻雜的方式在有機發光材料層調控載子濃度分佈，使之上層載子濃度較高，藉以調控電流可流經上層的有機材料層。也可以是在發光材料層上，配置一低阻抗導體層，如第9圖所示。請參考第9圖，在步驟S712之後還包括下列步驟： In the above embodiment, the concentration distribution of the carrier is regulated in the organic light-emitting material layer by doping, so that the concentration of the carrier in the upper layer is higher, so that the current can flow through the organic material layer of the upper layer. It is also possible to arrange a low-impedance conductor layer on the luminescent material layer as shown in FIG. Referring to FIG. 9, after step S712, the following steps are further included:
步驟S901：在發光材料層上，配置一低阻抗導體層。此低阻抗導體層可以是低阻抗有機材料、透明導電層或薄金屬。藉由減少上層阻抗，讓電流趨向於往上層流動，藉此，改善本發明實施例的三端點有機發光二極體崩潰現象的發生。 Step S901: disposing a low-impedance conductor layer on the luminescent material layer. The low-impedance conductor layer may be a low-impedance organic material, a transparent conductive layer, or a thin metal. By reducing the impedance of the upper layer, the current tends to flow upward, thereby improving the occurrence of the three-terminal organic light-emitting diode collapse phenomenon of the embodiment of the present invention.
第10圖繪示為本發明一較佳實施例的第6圖之有機發光二極體面板之像素的製作方法之流程 圖。在此實施例中，特別是在TFT基板上製作本發明的像素。第10A圖繪示為有機發光二極體面板之像素的俯視圖以及剖面圖。後續將搭配此兩張圖示說明本發明實施例像素的製作方法步驟： 10 is a flow chart of a method for fabricating a pixel of an organic light emitting diode panel according to a sixth embodiment of the present invention. Figure. In this embodiment, the pixel of the present invention is fabricated particularly on a TFT substrate. FIG. 10A is a top view and a cross-sectional view of a pixel of the organic light emitting diode panel. The following two steps will be used to illustrate the steps of the method for fabricating pixels in the embodiment of the present invention:
步驟S1000：開始。 Step S1000: Start.
步驟S1001：在一透明基板1000上，配置一非晶矽1001。請參考第10A圖，，配置非晶矽1001主要是用來製作薄膜電晶體(Thin Film Transistor，TFT)。透明基板不能忍受高的退火溫度，所以全部的沉積製程必須在相對低溫下進行，如化學氣相沉積、物理氣相沉積(例如濺鍍)。 Step S1001: An amorphous germanium 1001 is disposed on a transparent substrate 1000. Referring to FIG. 10A, the amorphous germanium 1001 is mainly used to fabricate a thin film transistor (TFT). Transparent substrates cannot withstand high annealing temperatures, so all deposition processes must be performed at relatively low temperatures, such as chemical vapor deposition, physical vapor deposition (eg, sputtering).
步驟S1002：進行一晶體轉化製程，將非晶矽轉化為多晶矽(poly-silicon，p-Si)。一般來說，此步驟會採用準分子雷射退火(Excimer-Laser Annealing，ELA)方式，利用準分子雷射作為熱源，雷射光經過投射光學系統後，雷射光束投射於非晶矽的結構上。當非晶矽結構吸收準分子雷射的能量後，經由融化、冷卻、凝固再結晶等步驟後會轉變成為多晶矽結構。然而，多晶矽的作法還包括固相結晶法(Solid.Phase Crystallization，SPC)、金屬誘發結晶化(Metal-induced crystallization，MIC)等等，故本發明不以此為限。 Step S1002: performing a crystal conversion process to convert amorphous germanium into poly-silicon (p-Si). In general, this step uses an Excimer-Laser Annealing (ELA) method using a pseudo-molecular laser as a heat source. After the laser beam passes through the projection optical system, the laser beam is projected onto the amorphous structure. . When the amorphous germanium structure absorbs the energy of the excimer laser, it is converted into a polycrystalline germanium structure by steps such as melting, cooling, solidification and recrystallization. However, the practice of polycrystalline germanium also includes solid phase crystallization (SPC), metal-induced crystallization (MIC), and the like, and the present invention is not limited thereto.
步驟S1003：配置一薄膜氧化層1002。 Step S1003: Disposing a thin film oxide layer 1002.
步驟S1004：配置一第一金屬層。請參考第10A圖，第一金屬層包括陽極層1003、閘極電極1004 以及電容603的第一電極1005。 Step S1004: Configuring a first metal layer. Referring to FIG. 10A, the first metal layer includes an anode layer 1003 and a gate electrode 1004. And a first electrode 1005 of the capacitor 603.
步驟S1005：配置一第一絕緣層1006。如第10A圖所示。 Step S1005: Configuring a first insulating layer 1006. As shown in Figure 10A.
步驟S1006：進行一介層窗(VIA)1007配置。薄膜電晶體的第一源汲極需要連接到資料線，故需要配置一介層窗，以連接到上層金屬。同樣的，薄膜電晶體的第二源汲極需要連接到電容603的第二電極。再者，電容603的第一電極1005需要連接到共接電壓。另外，陽極層1003需要連接到電源電壓。故上述幾個節點皆需要配置一介層窗1007。 Step S1006: Perform a via window (VIA) 1007 configuration. The first source drain of the thin film transistor needs to be connected to the data line, so a via window needs to be disposed to connect to the upper metal. Similarly, the second source drain of the thin film transistor needs to be connected to the second electrode of capacitor 603. Furthermore, the first electrode 1005 of the capacitor 603 needs to be connected to a common voltage. In addition, the anode layer 1003 needs to be connected to a power supply voltage. Therefore, all of the above nodes need to be configured with a via window 1007.
步驟S1007：進行一第二金屬層配置。如第10A圖所示，第二金屬層包括陰極層1008、電容603的第二金屬1009、源極線1010、電源電壓線1011、共接電壓線1012以及參考電壓線1013。 Step S1007: Perform a second metal layer configuration. As shown in FIG. 10A, the second metal layer includes a cathode layer 1008, a second metal 1009 of the capacitor 603, a source line 1010, a power supply voltage line 1011, a common voltage line 1012, and a reference voltage line 1013.
步驟S1008：配置一第二絕緣層1014。 Step S1008: Configuring a second insulating layer 1014.
步驟S1009：進行介層窗(VIA)1015配置。 Step S1009: Performing a via window (VIA) 1015 configuration.
步驟S1010：進行一參考電壓層1016配置。如第10A圖所示，參考電壓層1016透過介層窗1015和第二金層電連接。 Step S1010: Perform a reference voltage layer 1016 configuration. As shown in FIG. 10A, the reference voltage layer 1016 is electrically connected through the via 1015 and the second gold layer.
步驟S1011：配置一第三絕緣層1017。 Step S1011: Configuring a third insulating layer 1017.
步驟S1012：蝕刻上述第一絕緣層1006、第二絕緣層1014與第三絕緣層1017，產生一第一凹坑1018以及一第二凹坑1019。接下來的步驟和上述步 驟S708~S712相同，故不予贅述。 Step S1012: etching the first insulating layer 1006, the second insulating layer 1014 and the third insulating layer 1017 to generate a first pit 1018 and a second pit 1019. The next steps and the above steps Steps S708 to S712 are the same, and therefore will not be described again.
值得一提的是，雖然上述實施例皆採用參考電壓層1016設置於第二絕緣層1014上方的方式實施本發明，然在本發明另一實施例中，參考電壓層1016也可以是搭配第一金屬層或第二金屬層製作，可以達到減少製程光罩數及製作流程步驟，降低製作成本等功效。如第10B圖所示，在此實施例中，參考電壓層1016是和第二金屬層或第一金屬層位於同一層，且被第二絕緣層1014所覆蓋。本發明不以此為限。只要是參考電壓層被配置在第一凹坑與第二凹坑之間，就屬於本發明的範圍。 It should be noted that although the above embodiments implement the present invention in such a manner that the reference voltage layer 1016 is disposed over the second insulating layer 1014, in another embodiment of the present invention, the reference voltage layer 1016 may also be the first. The metal layer or the second metal layer can be used to reduce the number of process masks and the manufacturing process steps, and reduce the manufacturing cost. As shown in FIG. 10B, in this embodiment, the reference voltage layer 1016 is in the same layer as the second metal layer or the first metal layer, and is covered by the second insulating layer 1014. The invention is not limited thereto. It is within the scope of the invention as long as the reference voltage layer is disposed between the first pit and the second pit.
上述實施例的第10A圖之結構僅是示範性的舉例，實際在製作面板時，並非一定會按照此圖施做，且上述這些圖式的剖面圖僅是示意，並沒有全然和俯視圖互相對應。舉例來說，薄膜電晶體的第二源汲極除了連接到電容603的第二電極外，也可以選擇性的連接到電容603的第一電極，並且將電容603的第二電極耦接到共接電壓。再者，陽極層1003與陰極層1008亦可以互換位置。因此，本發明的製程並不以上述圖式為限。 The structure of FIG. 10A of the above embodiment is merely an exemplary example. Actually, when manufacturing a panel, it is not necessarily performed according to this figure, and the cross-sectional views of the above-mentioned drawings are only schematic, and do not correspond to the top view at all. . For example, the second source drain of the thin film transistor can be selectively connected to the first electrode of the capacitor 603 in addition to the second electrode connected to the capacitor 603, and the second electrode of the capacitor 603 can be coupled to the common electrode. Connect the voltage. Furthermore, the anode layer 1003 and the cathode layer 1008 can also be interchanged. Therefore, the process of the present invention is not limited to the above drawings.
綜上所述，本發明的精神在於利用改變有機發光二極體面板的像素之架構，將原本堆疊製程的有機發光二極體像素，改為平面製程，增加開口率，並且在絕緣層之間，嵌入一層參考電壓層，藉由此參考電壓層，控制發光材料層上的電流路徑，讓有機發光二極體像素可以達到類似三端元件的控制模式，藉此，若以此改良的有 機發光二極體像素實施成為主動矩陣面板，每一個像素可以減少一個薄膜電晶體的使用。如此，將大大減少製程與電路控制複雜度，同時也降低了製造成本。再者，由於參考電壓層是埋在發光材料層下方，故能增加發光效率，且參考電壓層的使用材料可以更加多元化。 In summary, the spirit of the present invention is to change the structure of the pixel of the organic light-emitting diode panel by changing the organic light-emitting diode pixel of the original stacked process to a planar process, increasing the aperture ratio, and between the insulating layers. Embedding a layer of reference voltage layer, thereby controlling the current path on the luminescent material layer by using the reference voltage layer, so that the OLED pixel can achieve a control mode similar to the three-terminal element, thereby improving The LEDs are implemented as active matrix panels, and each pixel can reduce the use of a thin film transistor. In this way, the complexity of the process and circuit control will be greatly reduced, and the manufacturing cost will also be reduced. Furthermore, since the reference voltage layer is buried under the luminescent material layer, the luminous efficiency can be increased, and the material used for the reference voltage layer can be more diversified.
在較佳實施例之詳細說明中所提出之具體實施例僅用以方便說明本發明之技術內容，而非將本發明狹義地限制於上述實施例，在不超出本發明之精神及以下申請專利範圍之情況，所做之種種變化實施，皆屬於本發明之範圍。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 The specific embodiments of the present invention are intended to be illustrative only and not to limit the invention to the above embodiments, without departing from the spirit of the invention and the following claims. The scope of the invention and the various changes made are within the scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101040391A (en) * | 2004-08-30 | 2007-09-19 | 国立大学法人京都大学 | Organic semiconductor light emitting device and display device using the same |
| US7405514B2 (en) * | 2002-08-06 | 2008-07-29 | Rohm Co., Ltd. | Organic EL display device with plural electrode segments |
| TW200845451A (en) * | 2007-05-11 | 2008-11-16 | Chi Mei El Corp | Semiconductor element, and display pixel and display panel using the same |
| TW200904234A (en) * | 2007-07-06 | 2009-01-16 | Chi Mei El Corp | Organic light emitting organic light emitting diode panel and pixel and manufacturing method thereof |
| US20150357603A1 (en) * | 2014-06-05 | 2015-12-10 | Samsung Display Co., Ltd. | Organic light-emitting transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405514B2 (en) * | 2002-08-06 | 2008-07-29 | Rohm Co., Ltd. | Organic EL display device with plural electrode segments |
| CN101040391A (en) * | 2004-08-30 | 2007-09-19 | 国立大学法人京都大学 | Organic semiconductor light emitting device and display device using the same |
| TW200845451A (en) * | 2007-05-11 | 2008-11-16 | Chi Mei El Corp | Semiconductor element, and display pixel and display panel using the same |
| TW200904234A (en) * | 2007-07-06 | 2009-01-16 | Chi Mei El Corp | Organic light emitting organic light emitting diode panel and pixel and manufacturing method thereof |
| US20150357603A1 (en) * | 2014-06-05 | 2015-12-10 | Samsung Display Co., Ltd. | Organic light-emitting transistor |
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