TWI650828B - Substrate processing apparatus - Google Patents
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Abstract
本揭示提供一種基板處理裝置，包含：一旋轉台，其內部包含一第一氣體通道和一第二氣體通道；一抽氣單元，與該旋轉台連接，用於使該第一氣體通道內保持在一負壓狀態，進而將該基板保持在該旋轉台上；以及一氣體供應單元，與該旋轉台連接，用於供應一保護氣體，其中該保護氣體經由該第二連接通道吹出在該基板上並環繞該旋轉台之基板承載部。 The present disclosure provides a substrate processing apparatus comprising: a rotary table having a first gas passage and a second gas passage therein; and an air extraction unit coupled to the rotary table for holding the first gas passage Holding the substrate on the rotating table in a negative pressure state; and a gas supply unit connected to the rotating table for supplying a shielding gas, wherein the shielding gas is blown out on the substrate via the second connecting passage A substrate carrying portion that surrounds and surrounds the rotating table.
Description
本揭示是關於一種基板處理裝置，特別是關於一種具有雙氣源管路之基板處理裝置。 The present disclosure relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus having a dual gas source line.
在傳統的單晶圓旋轉清洗蝕刻裝置中，為了避免噴灑在基板上的蝕刻液體流至基板背(底)面而造成真空吸盤的污染以及破壞其真空吸取之能力。目前業界是採用在單晶圓旋轉清洗蝕刻裝置旁另增設一個固定式的噴氣裝置，其是以朝向基板背面噴氣的方式將流至基板背面的液體吹落。然而，此類型的噴氣裝置無法與旋轉的基板同步旋轉作動，如此難以達到全面性的保護。 In the conventional single-wafer rotary cleaning etching apparatus, in order to prevent the etching liquid sprayed on the substrate from flowing to the back (bottom) surface of the substrate, the vacuum chuck is contaminated and the vacuum suction capability is destroyed. At present, in the industry, a fixed type of jet device is added next to the single-wafer rotary cleaning and etching device, which blows the liquid flowing to the back surface of the substrate in a manner of jetting toward the back surface of the substrate. However, this type of jet device cannot be rotated in synchronism with the rotating substrate, so that it is difficult to achieve comprehensive protection.
然而，倘若要將上述的噴氣裝置整合在傳統的單晶圓旋轉清洗蝕刻裝置中以使得噴氣裝置能與基板同步旋轉作動則存在一定的困難。舉例來說，在傳統的單晶圓旋轉清洗蝕刻裝置中，為了以真空吸取的方式將基板保持在旋轉台上，通常會在旋轉台內組裝氣體管路，以發揮真空吸取功能。此類型的裝置由於內部僅需安裝一條氣體管路，故只需藉由將氣體管路牽引至轉軸中心或者是搭配特殊接頭設計，即可避免旋轉台旋轉時造成氣體管路繞曲的問題。然而，當單晶圓旋轉清洗蝕刻裝置中配置兩條以上的氣體管路時，裝設在旋轉台內部的兩條氣體管路存在隨著旋轉台的轉動而彼此纏繞在一起的風險。 However, there is a certain difficulty in integrating the above-described jet device into a conventional single wafer rotary cleaning etching device so that the jet device can rotate in synchronization with the substrate. For example, in a conventional single-wafer rotary cleaning etching apparatus, in order to hold the substrate on a rotary table in a vacuum suction manner, a gas line is usually assembled in the rotary table to perform a vacuum suction function. Since this type of device only needs to install one gas pipeline inside, it is only necessary to draw the gas pipeline to the center of the shaft or with a special joint design to avoid the problem of the gas pipeline winding when the rotary table rotates. However, when two or more gas lines are disposed in the single wafer rotary cleaning etching apparatus, the two gas lines installed inside the rotary table are at risk of being entangled with each other as the rotary table rotates.
有鑑於此，有必要提出一種具有雙氣源管路之基板處理裝置，以解決習知技術中存在的問題。 In view of the above, it is necessary to propose a substrate processing apparatus having a dual gas source line to solve the problems in the prior art.
為解決上述習知技術之問題，本揭示之目的在於提供一種具有雙氣源管路之基板處理裝置，其可有效地解決現有技術中因兩條氣體管路會隨著旋轉台的轉動而彼此纏繞在一起的問題。 In order to solve the above problems of the prior art, the purpose of the present disclosure is to provide a substrate processing apparatus having a dual gas source pipeline, which can effectively solve the problem in the prior art that two gas pipelines will rotate with the rotation of the rotary table. The problem of entanglement.
為達成上述目的，本揭示提供一種基板處理裝置，包含：一旋轉台，用於保持一基板，並且可繞著一中央軸旋轉，該旋轉台內部包含一第一氣體通道和一第二氣體通道，其中該第一氣體通道之一端位在該旋轉台之基板承載部，且另一端位在旋轉台之第一位置，以及該第二氣體通道之一端位在該旋轉台的該基板承載部，且另一端位在旋轉台之第二位置；一抽氣單元，與該旋轉台之該第一位置連接，用於使該第一氣體通道內保持在一負壓狀態，進而將該基板保持在該旋轉台上；以及一氣體供應單元，與該旋轉台之該第二位置連接，用於供應一保護氣體，其中該保護氣體經由該第二連接通道吹送至該基板背面上，該保護氣體用於防止施加在該基板上的處理流體沿該基板的背面流至該基板承載部。 In order to achieve the above object, the present disclosure provides a substrate processing apparatus including: a rotating table for holding a substrate and rotatable about a central axis, the rotating table including a first gas passage and a second gas passage Wherein one of the first gas passages is located at a substrate carrying portion of the rotary table, and the other end is at a first position of the rotary table, and one end of the second gas passage is at the substrate carrying portion of the rotary table. And the other end is located at the second position of the rotating table; a pumping unit is connected to the first position of the rotating table for maintaining the first gas passage in a negative pressure state, thereby maintaining the substrate in the And a gas supply unit connected to the second position of the rotating table for supplying a shielding gas, wherein the shielding gas is blown to the back surface of the substrate via the second connecting passage, the shielding gas is used for The process fluid applied to the substrate is prevented from flowing to the substrate carrier along the back surface of the substrate.
於本揭示其中之一較佳實施例當中，該抽氣單元包含：一第一軸封，環繞且包覆住該旋轉台之該第一位置，包含一第一連接通道；一第一氣室，設置在該第一軸封與該旋轉台之間，並且和該第一氣體通道連通；以及一抽氣設備，與該第一軸封之該第一連接通道連接，用於將該第一連接通道、該第一氣室和該第一氣體通道內的氣體抽出。 In a preferred embodiment of the present disclosure, the air pumping unit includes: a first shaft seal surrounding and covering the first position of the rotating table, including a first connecting passage; and a first air chamber Between the first shaft seal and the rotating table, and in communication with the first gas passage; and an air extracting device connected to the first connecting passage of the first shaft seal for the first The connecting passage, the first plenum, and the gas in the first gas passage are withdrawn.
於本揭示其中之一較佳實施例當中，該氣體供應單元包含： 一第二軸封，環繞且包覆住該旋轉台之該第二位置，包含一第二連接通道；一第二氣室，並且和該第二氣體通道連通，設置在該第二軸封與該旋轉台之間；以及一氣體供應設備，與該第二連接通道連接，用於在該第二連接通道、該第二氣室和該第二氣體通道內注入該保護氣體。 In a preferred embodiment of the present disclosure, the gas supply unit comprises: a second shaft seal surrounding and covering the second position of the rotating table, comprising a second connecting passage; a second air chamber communicating with the second gas passage, and being disposed on the second shaft seal Between the rotating stages; and a gas supply device connected to the second connecting passage for injecting the shielding gas in the second connecting passage, the second plenum and the second gas passage.
於本揭示其中之一較佳實施例當中，當該旋轉台旋轉時，該抽氣單元與該氣體供應單元保持固定不轉動。 In a preferred embodiment of the present disclosure, the air extraction unit and the gas supply unit remain fixed and not rotated when the rotary table rotates.
於本揭示其中之一較佳實施例當中，基板處理裝置還包含一氣體分流環，環繞地設置在該基板承載部周圍，用於將該氣體供應單元供應之該保護氣體分流至複數個出氣通道，並且該保護氣體通過該複數個出氣通道送至該基板背面上。 In a preferred embodiment of the present disclosure, the substrate processing apparatus further includes a gas shunt ring disposed around the substrate carrying portion for shunting the shielding gas supplied from the gas supply unit to the plurality of gas outlet channels. And the shielding gas is sent to the back surface of the substrate through the plurality of gas outlet channels.
於本揭示其中之一較佳實施例當中，該氣體分流環之邊緣與該基板之邊緣相隔一距離，使得該保護氣體會在該基板上產生從該基板之背面之中間周圍吹向該基板背面之邊緣的氣流。 In a preferred embodiment of the present disclosure, the edge of the gas shunt ring is spaced from the edge of the substrate such that the shielding gas is blown on the substrate from the middle of the back of the substrate toward the back of the substrate. The airflow at the edge.
於本揭示其中之一較佳實施例當中，該保護氣體包含氮氣 In a preferred embodiment of the present disclosure, the shielding gas comprises nitrogen
本揭示提供一種基板處理裝置，包含：一旋轉台，用於保持一基板；一驅動單元，與該旋轉台連接，用於驅動該旋轉台轉動；一第一軸封，環繞且包覆住該旋轉台之一部分，包含一第一連接通道；以及一第一氣室，設置在該第一軸封與該旋轉台之間，其中該第一軸封之該第一連接通道連接該第一氣室與外部環境，以及其中該旋轉台內部形成有一第一氣體通道，其一端連通至該第一氣室，以及另一端連通至該旋轉台之基板承載部。 The present disclosure provides a substrate processing apparatus including: a rotating table for holding a substrate; a driving unit coupled to the rotating table for driving the rotating table to rotate; a first shaft seal surrounding and covering the substrate a portion of the rotary table includes a first connecting passage; and a first air chamber disposed between the first shaft seal and the rotating table, wherein the first connecting passage of the first shaft seal connects the first gas a chamber and an external environment, and wherein a first gas passage is formed inside the rotary table, one end of which is connected to the first air chamber, and the other end is connected to the substrate carrier of the rotary table.
於本揭示其中之一較佳實施例，當中基板處理裝置還包含一 抽氣設備，與該第一軸封之該第一連接通道連接，其中該抽氣設備用於將該第一連接通道、該第一氣室和該第一氣體通道內的氣體抽出，使得該第一氣體通道內保持在一負壓狀態，進而將該基板保持在該旋轉台上。 In a preferred embodiment of the present disclosure, the substrate processing apparatus further includes a a pumping device connected to the first connecting passage of the first shaft seal, wherein the air extracting device is configured to extract the gas in the first connecting passage, the first air chamber and the first gas passage, so that the The first gas passage is maintained in a negative pressure state to hold the substrate on the rotating table.
於本揭示其中之一較佳實施例，當該轉軸與該旋轉台轉動時，該第一軸封保持固定不轉動。 In a preferred embodiment of the present disclosure, the first shaft seal remains fixed and does not rotate when the rotating shaft rotates with the rotating table.
於本揭示其中之一較佳實施例，基板處理裝置還包含：一第二軸封，環繞且包覆住該旋轉台之一部分，包含一第二連接通道；以及一第二氣室，設置在該第二軸封與該旋轉台之間，其中該第二軸封之該第二連接通道連接該第二氣室與外部環境，以及其中該旋轉台內部形成有一第二氣體通道，其一端連通至該第二氣室，以及另一端連通至該旋轉台之該基板承載部。 In a preferred embodiment of the present disclosure, the substrate processing apparatus further includes: a second shaft seal surrounding and covering a portion of the rotating table, including a second connecting passage; and a second air chamber disposed at Between the second shaft seal and the rotating table, wherein the second connecting passage of the second shaft seal connects the second air chamber to the external environment, and wherein a second gas passage is formed inside the rotating table, one end of which is connected To the second air chamber, and the other end is connected to the substrate carrying portion of the rotating table.
於本揭示其中之一較佳實施例，當該轉軸與該旋轉台轉動時，該第二軸封保持固定不轉動。 In a preferred embodiment of the present disclosure, the second shaft seal remains fixed and does not rotate when the rotating shaft rotates with the rotating table.
於本揭示其中之一較佳實施例，基板處理裝置還包含一氣體供應設備，與該第二軸封之該第二連接通道連接，用於在該第二連接通道、該第二氣室和該第二氣體通道內注入一保護氣體，使得該保護氣體通過該第二連接通道送至該基板背面上。 In a preferred embodiment of the present disclosure, the substrate processing apparatus further includes a gas supply device coupled to the second connection channel of the second shaft seal for the second connection channel, the second gas chamber, and A shielding gas is injected into the second gas passage, so that the shielding gas is sent to the back surface of the substrate through the second connecting passage.
於本揭示其中之一較佳實施例，基板處理裝置還包含一氣體分流環，環繞地設置在該基板承載部周圍，用於將該保護氣體分流至複數個出氣通道，並且該保護氣體通過該複數個出氣通道送至該基板背面上 In a preferred embodiment of the present disclosure, the substrate processing apparatus further includes a gas shunt ring disposed around the substrate carrying portion for shunting the shielding gas to the plurality of outlet channels, and the shielding gas passes through the a plurality of outlet channels are sent to the back of the substrate
本揭示還提供一種基板處理裝置，包含：一旋轉台，具有：一轉軸；一基板承載部，位在該轉軸上並可由該轉軸驅動來旋轉，該基板 承載部用於保持一基板，並使該基板可旋轉，該轉軸內部包含一第一氣體通道和一第二氣體通道可和該轉軸一起旋轉，該第一氣體通道用以施加一真空至該基板上，該第二氣體通道用以施加保護氣體於該基板的背面上環繞該基板承載部的位置，藉此以防止處理該基板的流體沿該基板的背面流至該基板承載部；一抽氣單元，與該第一通道相連通；以及一氣體供應單元，與該第二通道相連通。 The present disclosure further provides a substrate processing apparatus, comprising: a rotating table having: a rotating shaft; a substrate carrying portion located on the rotating shaft and rotatable by the rotating shaft, the substrate The carrying portion is configured to hold a substrate and rotate the substrate, the rotating shaft includes a first gas passage and a second gas passage for rotating together with the rotating shaft, the first gas passage is for applying a vacuum to the substrate The second gas passage is configured to apply a shielding gas around the substrate carrying portion on the back surface of the substrate, thereby preventing fluid flowing the substrate from flowing to the substrate carrying portion along the back surface of the substrate; a unit in communication with the first passage; and a gas supply unit in communication with the second passage.
於本揭示其中之一較佳實施例，該基板為四方形。 In one preferred embodiment of the present disclosure, the substrate is square.
相較於先前技術，本揭示藉由在實心的旋轉台內設計兩條獨立的氣體通道，並且在旋轉台的轉軸上對應兩條氣體通道之開口的位置分別連接兩個氣體單元，且該兩個氣體單元不會隨著旋轉台旋轉而轉動，如此可有效地避免現有技術中因兩條氣體管路會隨著旋轉台的轉動而彼此纏繞在一起的問題。 Compared with the prior art, the present disclosure designs two independent gas passages in a solid rotating table, and connects two gas units respectively at positions corresponding to the openings of the two gas passages on the rotating shaft of the rotating table, and the two The gas units do not rotate as the rotary table rotates, so that the problem of the two gas pipes entangled with each other with the rotation of the rotary table in the prior art can be effectively avoided.
1‧‧‧基板處理裝置 1‧‧‧Substrate processing unit
2‧‧‧基板 2‧‧‧Substrate
10‧‧‧旋轉台 10‧‧‧Rotating table
11‧‧‧基板承載部 11‧‧‧Substrate bearing unit
111‧‧‧真空吸盤 111‧‧‧vacuum suction cup
112‧‧‧分流盤 112‧‧‧Distributor
12‧‧‧轉軸 12‧‧‧ shaft
13‧‧‧第一氣體通道 13‧‧‧First gas passage
14‧‧‧第二氣體通道 14‧‧‧Second gas channel
20‧‧‧驅動單元 20‧‧‧Drive unit
30‧‧‧抽氣單元 30‧‧‧Pumping unit
31‧‧‧第一軸封 31‧‧‧First shaft seal
311‧‧‧第一連接通道 311‧‧‧First connection channel
32‧‧‧第一氣室 32‧‧‧First air chamber
33‧‧‧第一接頭 33‧‧‧First joint
40‧‧‧氣體供應單元 40‧‧‧ gas supply unit
41‧‧‧第二軸封 41‧‧‧Second shaft seal
411‧‧‧第二連接通道 411‧‧‧Second connection channel
42‧‧‧第二氣室 42‧‧‧Second chamber
43‧‧‧第二接頭 43‧‧‧Second joint
50‧‧‧氣體分流環 50‧‧‧ gas distribution ring
51‧‧‧第一環 51‧‧‧ first ring
52‧‧‧第二環 52‧‧‧ second ring
53‧‧‧狹縫 53‧‧‧slit
60‧‧‧分流氣室 60‧‧ ‧Diverter chamber
P1‧‧‧第一位置 P1‧‧‧ first position
P2‧‧‧第二位置 P2‧‧‧ second position
Z‧‧‧中央軸 Z‧‧‧Central axis
F‧‧‧對應第6圖之部分 F‧‧‧ corresponds to the part of Figure 6
E‧‧‧對應第7圖之部分 E‧‧‧ corresponds to the part of Figure 7
T1~T12‧‧‧出氣通道 T1~T12‧‧‧ gas passage
R‧‧‧距離 R‧‧‧ distance
A-A‧‧‧割面線 A-A‧‧‧ cut line
C‧‧‧氣流 C‧‧‧Airflow
第1圖顯示本揭示之較佳實施例之基板處理裝置之方塊圖；第2圖顯示本揭示之較佳實施例之基板處理裝置之立體圖；第3圖顯示第2圖之旋轉台之基板處理裝置之平面剖面圖；第4圖顯示第2圖之旋轉台之基板處理裝置之另一平面剖面圖；第5圖顯示第2圖之旋轉台之基板處理裝置之立體剖面圖；第6圖顯示第5圖之E部分之放大圖；第7圖顯示第5圖之F部分之放大圖；第8圖顯示本揭示之較佳實施例之基板處理裝置之零件***圖； 第9圖顯示第8圖之基板處理裝置之氣體分流環與基板之仰視圖；以及第10圖顯示第9圖之沿著A-A割面線之剖面圖。 1 is a block diagram of a substrate processing apparatus of a preferred embodiment of the present disclosure; FIG. 2 is a perspective view showing a substrate processing apparatus of a preferred embodiment of the present disclosure; and FIG. 3 is a substrate processing of a rotary stage of FIG. FIG. 4 is a plan sectional view showing the substrate processing apparatus of the rotary table of FIG. 2; FIG. 5 is a perspective sectional view showing the substrate processing apparatus of the rotary table of FIG. 2; FIG. 7 is an enlarged view of a portion F of FIG. 5; FIG. 8 is an enlarged view of a portion of the substrate processing apparatus of the preferred embodiment of the present disclosure; Fig. 9 is a bottom plan view showing the gas shunt ring and the substrate of the substrate processing apparatus of Fig. 8; and Fig. 10 is a cross-sectional view taken along line A-A of Fig. 9;
為了讓本揭示之上述及其他目的、特徵、優點能更明顯易懂，下文將特舉本揭示較佳實施例，並配合所附圖式，作詳細說明如下。 The above and other objects, features, and advantages of the present invention will become more apparent and understood.
請參照第1圖，其顯示本揭示之較佳實施例之基板處理裝置1之方塊圖。基板處理裝置1包含旋轉台10、驅動單元20、抽氣單元30、和氣體供應單元40，其中驅動單元20與旋轉台10電性連接，用於驅動旋轉台10轉動，以及抽氣單元30和氣體供應單元40亦分別與旋轉台10連接以提供負壓(真空)及微正壓保護氣體。 Referring to FIG. 1, there is shown a block diagram of a substrate processing apparatus 1 of a preferred embodiment of the present disclosure. The substrate processing apparatus 1 includes a rotating table 10, a driving unit 20, an air extracting unit 30, and a gas supply unit 40, wherein the driving unit 20 is electrically connected to the rotating table 10 for driving the rotating table 10 to rotate, and the pumping unit 30 and The gas supply unit 40 is also connected to the rotary table 10 to provide a negative pressure (vacuum) and a micro positive pressure shielding gas, respectively.
請參照第2圖至第5圖，第2圖顯示本揭示之較佳實施例之基板處理裝置1之立體圖，第3圖顯示第2圖之旋轉台之基板處理裝置1之平面剖面圖，第4圖顯示第2圖之旋轉台之基板處理裝置1之另一平面剖面圖，以及第5圖顯示第2圖之旋轉台之基板處理裝置1之立體剖面圖。應當注意的是，驅動單元20以及抽氣單元30與氣體供應單元40之部分元件，例如抽氣設備和氣體供應設備，未顯示於第2圖至第5圖中。旋轉台10包含基板承載部11、轉軸12、第一氣體通道13、和第二氣體通道14，其中基板承載部11是用於將基板承載且保持於其上。轉軸12可藉由皮帶、齒輪、鏈條等連接件與驅動單元20連接，以接收來自於驅動單元20的動力，進而帶動轉軸12繞著中央軸Z轉動。連帶地，當轉軸轉動時，會帶動基板承載部11及基板一起轉動。在本揭示之較佳實施例中，基板為四方形基板，如長方形或正方形。驅動單元20可為一電動馬達。 2 to 5, FIG. 2 is a perspective view showing a substrate processing apparatus 1 of a preferred embodiment of the present disclosure, and FIG. 3 is a plan sectional view showing a substrate processing apparatus 1 of the rotary table of FIG. 4 is a plan cross-sectional view showing another substrate processing apparatus 1 of the rotary table of FIG. 2, and FIG. 5 is a perspective cross-sectional view showing the substrate processing apparatus 1 of the rotary table of FIG. It should be noted that the drive unit 20 and some components of the air extraction unit 30 and the gas supply unit 40, such as an air suction device and a gas supply device, are not shown in FIGS. 2 to 5. The rotary table 10 includes a substrate carrying portion 11, a rotating shaft 12, a first gas passage 13, and a second gas passage 14, wherein the substrate carrying portion 11 is for carrying and holding the substrate thereon. The rotating shaft 12 can be connected to the driving unit 20 by a connecting member such as a belt, a gear, a chain or the like to receive the power from the driving unit 20, thereby driving the rotating shaft 12 to rotate about the central axis Z. In conjunction, when the rotating shaft rotates, the substrate carrying portion 11 and the substrate are rotated together. In a preferred embodiment of the present disclosure, the substrate is a square substrate such as a rectangle or a square. The drive unit 20 can be an electric motor.
如第3圖和第4圖所示，第一氣體通道13和第二氣體通道14形成在轉軸12內部，且第一氣體通道13和第二氣體通道14彼此獨立且不連通。第一氣體通道13之一端開口位在基板承載部11，以及另一端開口位在轉軸12的第一位置P1。該第一和第二氣體通道13、14可和該轉軸12一起旋轉。第二氣體通道14之一端開口同樣位在基板承載部11，以及另一端開口位在轉軸12的第二位置P2。應當注意的是，第一氣體通道13和第二氣體通道14之位在基板承載部11的兩開口彼此相隔一橫向距離，進而可避免氣流干擾問題。較佳地，第一氣體通道13的開口位在基板承載部11靠近中央軸Z的位置，而第二氣體通道14的開口則位在第一氣體通道13開口的外側。 As shown in FIGS. 3 and 4, the first gas passage 13 and the second gas passage 14 are formed inside the rotary shaft 12, and the first gas passage 13 and the second gas passage 14 are independent of each other and are not in communication. One end of the first gas passage 13 is open at the substrate carrying portion 11, and the other end is open at the first position P1 of the rotating shaft 12. The first and second gas passages 13, 14 are rotatable together with the rotating shaft 12. One end opening of the second gas passage 14 is also positioned at the substrate carrying portion 11, and the other end opening is at the second position P2 of the rotating shaft 12. It should be noted that the positions of the first gas passage 13 and the second gas passage 14 are spaced apart from each other by a lateral distance between the two openings of the substrate carrying portion 11, thereby avoiding airflow interference problems. Preferably, the opening of the first gas passage 13 is at a position near the central axis Z of the substrate carrying portion 11, and the opening of the second gas passage 14 is located outside the opening of the first gas passage 13.
如第3圖和第6圖所示，其中第6圖顯示第5圖之E部分之放大圖。第3圖之抽氣單元30包含第一軸封31、第一氣室32、抽氣設備(未顯示)、和第一接頭33。抽氣設備可為一真空幫浦。第一軸封31環繞且包覆住轉軸12的第一位置P1。第一氣室32設置在第一軸封31與旋轉台10之轉軸12之間，且和第一氣體通道13相通。第一軸封31包含第一連接通道311，其連通第一氣室32與外部環境，其中第一接頭33組裝在第一連接通道311之位在第一軸封31之外部的開口，並且第一接頭33是用於與抽氣設備連接。 As shown in Figs. 3 and 6, wherein Fig. 6 shows an enlarged view of the portion E of Fig. 5. The pumping unit 30 of FIG. 3 includes a first shaft seal 31, a first air chamber 32, an air suction device (not shown), and a first joint 33. The pumping device can be a vacuum pump. The first shaft seal 31 surrounds and covers the first position P1 of the rotating shaft 12. The first air chamber 32 is disposed between the first shaft seal 31 and the rotating shaft 12 of the rotary table 10 and communicates with the first gas passage 13. The first shaft seal 31 includes a first connecting passage 311 that communicates with the first air chamber 32 and the external environment, wherein the first joint 33 is assembled at an opening of the first connecting passage 311 outside the first shaft seal 31, and A joint 33 is for connection to the suction device.
藉此設計，當抽氣設備進行抽氣作業時，第一連接通道311、第一氣室32和第一氣體通道13內的氣體被抽出，使得第一連接通道311、第一氣室32和第一氣體通道13內部呈現負壓狀態。 With this design, when the pumping device performs the pumping operation, the gas in the first connecting passage 311, the first air chamber 32, and the first gas passage 13 is extracted, so that the first connecting passage 311, the first air chamber 32, and The inside of the first gas passage 13 exhibits a negative pressure state.
如第3圖和第5圖所示，第5圖之基板承載部11包含真空吸盤111和分流盤112，其中真空吸盤111覆蓋在分流盤112，且真空吸盤111是用於與基板接觸。較佳地，真空吸盤111為多孔材質，如此空氣可經由真空吸 盤111上的孔洞從真空吸盤111其中一面流通置另一面。第一氣體通道13之開口位在分流盤112上。藉此設計，當抽氣單元30之抽氣設備進行抽氣作業時，位在真空吸盤111與基板之間的空氣會經由真空吸盤111的孔洞流向分流盤112，接著分流盤112的空氣會匯聚在第一氣體通道31之開口，參考第3圖最後空氣再依序經由第一氣體通道13第一氣室32和第一連接通道311而被抽出，如此可將基板穩定地保持在旋轉台10之真空吸盤111上。 As shown in FIGS. 3 and 5, the substrate carrying portion 11 of FIG. 5 includes a vacuum chuck 111 and a shunt disk 112, wherein the vacuum chuck 111 covers the shunt disk 112, and the vacuum chuck 111 is for contact with the substrate. Preferably, the vacuum chuck 111 is made of a porous material, so that the air can be sucked through the vacuum. The holes in the disk 111 flow from the other side of the vacuum chuck 111 to the other side. The opening of the first gas passage 13 is located on the splitter disk 112. With this design, when the pumping device of the pumping unit 30 performs the pumping operation, the air between the vacuum chuck 111 and the substrate flows to the splitter disk 112 via the hole of the vacuum chuck 111, and then the air of the splitter disk 112 is concentrated. At the opening of the first gas passage 31, the air is finally drawn through the first gas passage 13 and the first connecting passage 311 in sequence with reference to FIG. 3, so that the substrate can be stably held on the rotary table 10 On the vacuum chuck 111.
另一方面，當使用傳統的單晶圓旋轉清洗蝕刻裝置處理非圓形基板時，由於非圓形基板具有多邊形特徵，因此存在噴灑在基板上的蝕刻液體流至基板背面的風險，因此會導致蝕刻液體流至真空吸盤111的開口處，進而污染真空吸盤111並且破壞其真空吸取之能力。因此，在本揭示中，為了避免基板承載部11不受噴灑在基板上的蝕刻液或處理流體污染，藉由在旋轉台10內部增設第二氣體通道14並藉由氣體供應單元40提供保護氣體，以在基板上提供從基板背面中心周圍吹向基板背面邊緣的氣流C(第10圖)，進而可有效地避免處理流體汙染基板承載部11之問題，其相應的具體結構及特徵將於下詳述。 On the other hand, when a non-circular substrate is processed using a conventional single-wafer rotary cleaning etching apparatus, since the non-circular substrate has a polygonal characteristic, there is a risk that an etching liquid sprayed on the substrate flows to the back surface of the substrate, thereby causing The etching liquid flows to the opening of the vacuum chuck 111, thereby contaminating the vacuum chuck 111 and destroying its ability to vacuum suction. Therefore, in the present disclosure, in order to prevent the substrate carrying portion 11 from being contaminated by the etching liquid or the processing fluid sprayed on the substrate, the second gas passage 14 is added inside the rotary table 10 and the shielding gas is supplied by the gas supply unit 40. Providing a gas flow C (Fig. 10) blown from the center of the back surface of the substrate toward the back surface of the substrate on the substrate, thereby effectively avoiding the problem that the processing fluid contaminates the substrate carrying portion 11, and the corresponding specific structure and features will be Detailed.
如第3圖、第4圖、和第7圖所示，其中第7圖顯示第5圖之F部分之放大圖。第4圖之氣體供應單元40包含第二軸封41、第二氣室42、氣體供應設備(未顯示)、和第二接頭43。氣體供應設備可為一氮氣鋼瓶提供氮氣源。第二軸封41環繞且包覆住轉軸12的第二位置P2。第二氣室42設置在第二軸封41與旋轉台10之轉軸12之間，且和第二氣體通道14相連通。第二軸封41包含第二連接通道411，其連通第二氣室42與外部環境，其中第二接頭43組裝在第二連接通道411之位在第二軸封41之外部的開口，並且第二 接頭43是用於與氣體供應設備連接。藉此設計，當氣體供應設備提供保護氣體時，保護氣體會注入第二連接通道411、第二氣室42和第二氣體通道14內，進而吹送至基板上。較佳地，氣體供應設備可為一氮氣鋼瓶提供氮氣源。 As shown in Fig. 3, Fig. 4, and Fig. 7, Fig. 7 shows an enlarged view of a portion F of Fig. 5. The gas supply unit 40 of FIG. 4 includes a second shaft seal 41, a second gas chamber 42, a gas supply device (not shown), and a second joint 43. The gas supply device provides a nitrogen source for a nitrogen cylinder. The second shaft seal 41 surrounds and covers the second position P2 of the rotating shaft 12. The second air chamber 42 is disposed between the second shaft seal 41 and the rotating shaft 12 of the rotary table 10 and communicates with the second gas passage 14. The second shaft seal 41 includes a second connecting passage 411 that communicates with the second air chamber 42 and the external environment, wherein the second joint 43 is assembled at an opening of the second connecting passage 411 outside the second shaft seal 41, and two The joint 43 is for connection to a gas supply device. With this design, when the gas supply device supplies the shielding gas, the shielding gas is injected into the second connecting passage 411, the second air chamber 42, and the second gas passage 14, and is then blown onto the substrate. Preferably, the gas supply device provides a nitrogen source for a nitrogen cylinder.
請參照第8圖、第9圖和第10圖所示，第8圖顯示本揭示之較佳實施例之基板處理裝置1之零件***圖，第9圖顯示第8圖之基板處理裝置1之氣體分流環50與基板2之仰視圖，以及第10圖顯示第9圖之沿著A-A割面線之剖面圖。當保護氣體經由第二氣體通道14吹送至基板2上時，為了讓吹出的保護氣體到達基板2的各邊緣，必須通過設置適當的氣體分流元件來讓保護氣體朝四面八方均勻的吹出。因此，本揭示的基板處理裝置1還包含氣體分流環50，其環繞地設置在旋轉台10之基板承載部11周圍，如第8圖所示用於將氣體供應單元40供應之保護氣體分流至複數個出氣通道T1至T12，並且保護氣體通過複數個出氣通道T1至T12吹送至基板2上。 Please refer to FIG. 8, FIG. 9 and FIG. 10, FIG. 8 is a view showing the exploded view of the substrate processing apparatus 1 of the preferred embodiment of the present disclosure, and FIG. 9 is a view showing the substrate processing apparatus 1 of FIG. A bottom view of the gas shunt ring 50 and the substrate 2, and a tenth view showing a cross-sectional view along the AA cut line of Fig. 9. When the shielding gas is blown onto the substrate 2 via the second gas passage 14, in order for the blown shielding gas to reach the respective edges of the substrate 2, it is necessary to uniformly blow the shielding gas in all directions by providing an appropriate gas flow dividing member. Accordingly, the substrate processing apparatus 1 of the present disclosure further includes a gas shunt ring 50 circumferentially disposed around the substrate carrying portion 11 of the turntable 10, as shown in FIG. 8 for shunting the shielding gas supplied from the gas supply unit 40 to A plurality of outlet passages T1 to T12 are blown, and the shielding gas is blown onto the substrate 2 through the plurality of outlet passages T1 to T12.
如第3圖所示，當氣體分流環50組裝在旋轉台10之基板承載部11周圍後，氣體分流環50與旋轉台10之間形成有環形的分流氣室60，並且第二氣體通道14會與分流氣室60連通，使得保護氣體可充滿在分流氣室60內部。又，如第8圖所示，氣體分流環50包含第一環51和第二環52。第一環51在面對第二環52之表面形成有複數個環形排列的凹槽，如此當第一環51和第二環52互相組裝疊置後，在第一環51和第二環52之間會形成複數個環形排列的出氣通道T1至T12。舉例來說在本實施例中氣體分流環50包含12個出氣通道T1至T12，惟不侷限於此。再者，如第10圖所示，氣體分流環50在靠近基板2邊緣之一側，其第一環51和第二環52並非是密封式組裝，而是 在第一環51和第二環52之末端保留可讓保護氣體通過的狹縫53。藉此設計，充滿在分流氣室60內部的保護氣體，可經由不同的出氣通道T1至T12，分散在氣體分流環50內部，接著通過對應的狹縫53排出，進而吹在基板2上。 As shown in FIG. 3, when the gas split ring 50 is assembled around the substrate carrying portion 11 of the rotary table 10, an annular split plenum 60 is formed between the gas splitter ring 50 and the rotary table 10, and the second gas passage 14 is formed. It will be in communication with the split plenum 60 such that the shielding gas can be filled inside the split plenum 60. Further, as shown in Fig. 8, the gas split ring 50 includes a first ring 51 and a second ring 52. The first ring 51 is formed with a plurality of annularly arranged grooves on the surface facing the second ring 52, such that when the first ring 51 and the second ring 52 are assembled to each other, the first ring 51 and the second ring 52 are A plurality of annularly arranged outlet passages T1 to T12 are formed between them. For example, in the present embodiment, the gas shunt ring 50 includes 12 outlet passages T1 to T12, but is not limited thereto. Furthermore, as shown in FIG. 10, the gas shunt ring 50 is on the side close to one side of the substrate 2, and the first ring 51 and the second ring 52 are not sealedly assembled, but A slit 53 through which the shielding gas passes is retained at the ends of the first ring 51 and the second ring 52. With this design, the shielding gas filled inside the splitting plenum 60 can be dispersed inside the gas shunt ring 50 via the different outlet passages T1 to T12, and then discharged through the corresponding slits 53, and then blown onto the substrate 2.
如第9圖和第10圖所示，氣體分流環50之邊緣與基板2之邊緣相隔一距離R，如此保護氣體會在基板2上產生從基板2之背(底)面之中心周圍吹向基板2背面之邊緣的氣流C。即，通過對應的狹縫53排出的保護氣體會先吹拂在基板2的背面環繞中心之周圍位置，接著保護氣體會沿著基板2之背面朝基板2背面之邊緣前進。如此，當噴灑在基板2上的蝕刻液體流至基板2背面時，通過保護氣體在基板2上產生的氣流C，可有效地阻止蝕刻液體繼續朝向旋轉台10之基板承載部11流動，進而可有效地避免蝕刻液體汙染基板承載部11之問題。 As shown in FIGS. 9 and 10, the edge of the gas shunt ring 50 is spaced apart from the edge of the substrate 2 by a distance R, so that the shielding gas is generated on the substrate 2 from the center around the back (bottom) surface of the substrate 2. Airflow C at the edge of the back side of the substrate 2. That is, the shielding gas discharged through the corresponding slit 53 is first blown around the back surface of the substrate 2 around the center, and then the shielding gas advances along the back surface of the substrate 2 toward the edge of the back surface of the substrate 2. In this way, when the etching liquid sprayed on the substrate 2 flows to the back surface of the substrate 2, the airflow C generated on the substrate 2 by the shielding gas can effectively prevent the etching liquid from continuing to flow toward the substrate carrying portion 11 of the rotary table 10, and further The problem of the etching liquid contaminating the substrate carrying portion 11 is effectively avoided.
應當注意的是，在本揭示中，當旋轉台10旋轉時，抽氣單元30與氣體供應單元40皆是保持固定不轉動。並且，藉由在實心的旋轉台10內部開設通道以作為氣體傳輸使用，而非採用傳統之在中空的轉軸內部裝設實體的氣體管路的方式，如此，當本揭示的旋轉台10旋轉時，不會有氣體管路繞曲的問題。 It should be noted that in the present disclosure, when the rotary table 10 is rotated, both the suction unit 30 and the gas supply unit 40 are kept fixed and not rotated. Moreover, by opening a passage inside the solid rotary table 10 for gas transmission, instead of using a conventional gas line for installing a solid gas inside the hollow shaft, when the rotary table 10 of the present disclosure is rotated, There will be no problem with the gas pipeline winding.
綜上所述，本揭示藉由在實心的旋轉台內設計兩條獨立的氣體通道，並且在旋轉台的轉軸上對應兩條氣體通道之開口的位置分別連接兩個氣體單元，且該兩個氣體單元不會隨著旋轉台旋轉而轉動，如此可有效地避免現有技術中因兩條氣體管路會隨著旋轉台的轉動而彼此纏繞在一起的問題。此外，通過在基板上施加從背面中心周圍吹向邊緣的氣流，可防止噴灑在基板上的蝕刻液體流至基板背面，進而防止蝕刻液體汙染或破 壞真空吸盤之問題。 In summary, the present disclosure provides two independent gas passages in a solid rotating table, and two gas units are respectively connected to the positions of the openings of the two gas passages on the rotating shaft of the rotating table, and the two The gas unit does not rotate as the rotary table rotates, so that the problem of the two gas pipes being entangled with each other with the rotation of the rotary table in the prior art can be effectively avoided. In addition, by applying a gas flow from the center of the back surface to the edge on the substrate, the etching liquid sprayed on the substrate can be prevented from flowing to the back surface of the substrate, thereby preventing the etching liquid from being contaminated or broken. Bad vacuum sucker problem.
以上僅是本揭示的較佳實施方式，應當指出，對於所屬領域技術人員，在不脫離本揭示原理的前提下，還可以做出若干改進和潤飾，這些改進和潤飾也應視為本揭示的保護範圍。 The above is only a preferred embodiment of the present disclosure, and it should be noted that those skilled in the art can also make several improvements and refinements without departing from the principles of the present disclosure. These improvements and refinements should also be considered as protected range.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110000883A1 (en) * | 2003-04-24 | 2011-01-06 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| US20120014689A1 (en) * | 2010-07-14 | 2012-01-19 | Tokyo Electron Limited | Substrate cleaning apparatus, coating and developing apparatus having the same and substrate cleaning method |
| US20130171831A1 (en) * | 2011-12-28 | 2013-07-04 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| US20160372317A1 (en) * | 2014-03-06 | 2016-12-22 | Imt Co., Ltd | Device and method for cleaning backside or edge of wafer |
| TWM561911U (en) * | 2018-01-10 | 2018-06-11 | 弘塑科技股份有限公司 | Substrate processing apparatus |
-
2018
- 2018-01-10 TW TW107100964A patent/TWI650828B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110000883A1 (en) * | 2003-04-24 | 2011-01-06 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| US20120014689A1 (en) * | 2010-07-14 | 2012-01-19 | Tokyo Electron Limited | Substrate cleaning apparatus, coating and developing apparatus having the same and substrate cleaning method |
| US20130171831A1 (en) * | 2011-12-28 | 2013-07-04 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| US20160372317A1 (en) * | 2014-03-06 | 2016-12-22 | Imt Co., Ltd | Device and method for cleaning backside or edge of wafer |
| TWM561911U (en) * | 2018-01-10 | 2018-06-11 | 弘塑科技股份有限公司 | Substrate processing apparatus |
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| Publication number | Publication date |
|---|---|
| TW201931491A (en) | 2019-08-01 |
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