TWI644514B - Acoustic-wave device with active calibration mechanism - Google Patents
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Abstract
一種具主動校準機制之聲波裝置。具主動校準機制之聲波裝置包括至少一聲波雙工器、一壓控振盪器、頻率鑑別器及一控制電路。聲波雙工器包括一傳送濾波器及一接收濾波器。壓控振盪器包括一校準共振腔。傳送濾波器、接收濾波器及校準共振腔設置於同一壓電材料基板上。頻率鑑別器可依據校準共振腔之一頻偏程度，產生對應的一校準訊號。控制電路再依據校準訊號，調整傳送濾波器或接收濾波器之操作頻率。 An acoustic wave device with an active calibration mechanism. The acoustic wave device with active calibration mechanism includes at least one acoustic duplexer, a voltage controlled oscillator, a frequency discriminator and a control circuit. The acoustic duplexer includes a transmit filter and a receive filter. The voltage controlled oscillator includes a calibrated resonant cavity. The transmission filter, the reception filter, and the calibration cavity are disposed on the same piezoelectric material substrate. The frequency discriminator can generate a corresponding calibration signal according to the frequency deviation of one of the calibration resonant cavities. The control circuit then adjusts the operating frequency of the transmit filter or the receive filter based on the calibration signal.
Description
本發明是有關於一種聲波裝置，且特別是有關於一種具主動校準機制之聲波裝置。 The present invention relates to an acoustic wave device, and more particularly to an acoustic wave device having an active calibration mechanism.
請參照第1圖，其繪示聲波裝置(acoustic-wave device)900之示意圖。聲波裝置900包括一壓電材料基板(piezoelectric substrate)910、一壓電薄膜層(piezo film layer)920及一指叉電容結構930。表面聲波在指叉電容結構930上傳播，並利用壓電薄膜層920，將電信號轉換成聲信號應用後再轉換為電信號。 Please refer to FIG. 1 , which shows a schematic diagram of an acoustic-wave device 900 . The acoustic wave device 900 includes a piezoelectric substrate 910, a piezo film layer 920, and a finger capacitor structure 930. The surface acoustic wave propagates on the interdigitated capacitor structure 930, and the piezoelectric film layer 920 is used to convert the electrical signal into an acoustic signal and then convert it into an electrical signal.
隨著表面聲波技術的發展，聲波裝置900已在各方面有不同的應用。例如，聲波裝置900可作為行動電話的濾波器、振盪器、變壓器和傳感器。聲波裝置900亦可應用於無線電和電視方面，使無線電接收的頻率範圍很窄和準確。或者，聲波裝置900可利用表面聲波和聲波在地球表層傳播的性質，監測和預報 地震。 With the development of surface acoustic wave technology, the acoustic wave device 900 has been applied in various aspects. For example, the acoustic wave device 900 can function as a filter, oscillator, transformer, and sensor for a mobile phone. The acoustic wave device 900 can also be applied to radio and television aspects such that the frequency range of radio reception is narrow and accurate. Alternatively, the acoustic wave device 900 can utilize the properties of surface acoustic waves and sound waves propagating on the surface of the earth, monitoring and forecasting. earthquake.
然而，由於指叉電容結構930與壓電薄膜層920的熱膨脹係數不同，可能產生翹曲的現象。請參照第2A圖，其繪示聲波裝置900位於低溫狀態之示意圖。當聲波裝置900位於低溫狀態時，指叉電容結構930收縮程度大於壓電薄膜層920的收縮程度，而造成兩側向上翹曲的現象。在低溫時，指叉電容結構930的間距(pitch)縮小，而將使訊號朝向高頻偏移。 However, since the coefficient of thermal expansion of the interdigital capacitor structure 930 and the piezoelectric film layer 920 are different, warping may occur. Please refer to FIG. 2A, which shows a schematic diagram of the acoustic wave device 900 in a low temperature state. When the acoustic wave device 900 is in a low temperature state, the finger capacitance structure 930 is contracted to a greater extent than the piezoelectric film layer 920, causing upward warping on both sides. At low temperatures, the pitch of the interdigitated capacitor structure 930 is reduced, which will shift the signal toward high frequencies.
請參照第2B圖，其繪示聲波裝置900位於高溫狀態之示意圖。當聲波裝置900位於高溫狀態時，指叉電容結構930擴張程度大於壓電薄膜層920的擴張程度，而造成兩側向下翹曲的現象。在高溫時，指叉電容結構930的間距(pitch)拉大，而將使訊號朝向低頻偏移。 Please refer to FIG. 2B, which shows a schematic diagram of the acoustic wave device 900 in a high temperature state. When the acoustic wave device 900 is in a high temperature state, the degree of expansion of the interdigital capacitor structure 930 is greater than the degree of expansion of the piezoelectric film layer 920, causing a downward warping on both sides. At high temperatures, the pitch of the interdigitated capacitor structure 930 is widened, which will shift the signal toward low frequencies.
請參照第3A圖，其繪示聲波裝置900在不同溫度之***損耗(Insertion loss)曲線圖。頻率響應曲線L11係為攝氏20度所量測之***損耗曲線，頻率響應曲線L12係為攝氏50度所量測之***損耗曲線，頻率響應曲線L13係為攝氏85度所量測之***損耗曲線。由三條頻率響應曲線L11、L12、L13可知，隨著溫度的上升，***損耗逐漸往低頻飄移。 Please refer to FIG. 3A, which shows an insertion loss curve of the acoustic wave device 900 at different temperatures. The frequency response curve L11 is the insertion loss curve measured at 20 degrees Celsius, the frequency response curve L12 is the insertion loss curve measured at 50 degrees Celsius, and the frequency response curve L13 is the insertion loss curve measured at 85 degrees Celsius. . It can be seen from the three frequency response curves L11, L12, and L13 that as the temperature rises, the insertion loss gradually shifts to the low frequency.
請參照第3B圖，其繪示聲波裝置900在不同溫度之反射損耗(Return loss)曲線圖。頻率響應曲線L21係為攝氏20度所量測之反射損耗曲線，頻率響應曲線L22係為攝氏50度所量測之反射損耗曲線，頻率響應曲線L23係為攝氏85度所量 測之反射損耗曲線。由三條頻率響應曲線L21、L22、L23可知，隨著溫度的上升，反射損耗逐漸往低頻飄移。 Please refer to FIG. 3B, which shows a graph of the return loss of the acoustic wave device 900 at different temperatures. The frequency response curve L21 is the reflection loss curve measured at 20 degrees Celsius, the frequency response curve L22 is the reflection loss curve measured at 50 degrees Celsius, and the frequency response curve L23 is 85 degrees Celsius. The measured reflection loss curve. It can be seen from the three frequency response curves L21, L22, and L23 that as the temperature rises, the reflection loss gradually shifts to the low frequency.
此外，除了溫度所產生的訊號變異以外，製程的偏差也會使聲波裝置900產生訊號變異。舉例來說，指叉電容結構930的間距過小時，將使訊號朝向高頻偏移。指叉電容結構930的間距過大時，將使訊號朝向低頻偏移。 In addition, in addition to the signal variations caused by temperature, variations in the process can cause the acoustic wave device 900 to produce signal variations. For example, if the pitch of the interdigitated capacitor structure 930 is too small, the signal will be shifted toward the high frequency. When the pitch of the interdigitated capacitor structure 930 is too large, the signal will be shifted toward the low frequency.
如上所述，溫度與製程所造成的訊號變異一直是難以克服的技術瓶頸，研究人員均致力於改善這方面的情況。 As mentioned above, signal variability caused by temperature and process has been an insurmountable technical bottleneck, and researchers are working to improve this situation.
本發明係有關於一種具主動校準機制之聲波裝置，其利用複製的校準共振腔，來瞭解傳送共振腔與接收共振腔因溫度因素或製程因素所發生的訊號變異，進而執行主動校準的動作。 The invention relates to an acoustic wave device with an active calibration mechanism, which utilizes a duplicated calibration resonant cavity to understand the signal variation caused by the temperature or process factors of the transmitting resonant cavity and the receiving resonant cavity, thereby performing an active calibration action.
根據本發明之第一方面，提出一種具主動校準機制之聲波裝置(acoustic-wave device)。具主動校準機制之聲波裝置包括至少一聲波雙工器(acoustic-wave duplexer)、一壓控振盪器(voltage-controlled oscillator,VCO)、一頻率鑑別器(frequency discriminator)及一控制電路。聲波雙工器包括一傳送濾波器(TX filter)及一接收濾波器(RX filter)。壓控振盪器包括一校準共振腔及一可調變負阻抗電路。傳送濾波器、接收濾波器及校準共振腔設置於同一壓電材料基板上。頻率鑑別器依據校準共振腔之一 頻偏程度，產生對應之一校準訊號。控制電路連接聲波雙工器及頻率鑑別器。控制電路再依據校準訊號，調整傳送濾波器或接收濾波器之操作頻率。 According to a first aspect of the invention, an acoustic-wave device with an active calibration mechanism is proposed. The acoustic wave device with active calibration mechanism includes at least one acoustic-wave duplexer, a voltage-controlled oscillator (VCO), a frequency discriminator and a control circuit. The acoustic duplexer includes a transmit filter (TX filter) and a receive filter (RX filter). The voltage controlled oscillator includes a calibrated resonant cavity and a tunable negative impedance circuit. The transmission filter, the reception filter, and the calibration cavity are disposed on the same piezoelectric material substrate. The frequency discriminator is based on one of the calibration resonators The degree of frequency offset produces a corresponding calibration signal. The control circuit is connected to the acoustic duplexer and the frequency discriminator. The control circuit then adjusts the operating frequency of the transmit filter or the receive filter based on the calibration signal.
根據本發明之第二方面，提出一種具主動校準機制之聲波裝置(acoustic-wave device)。具主動校準機制之聲波裝置包括至少一聲波雙工器(acoustic-wave duplexer)、一鎖相迴路(phase-locked loop,PLL)及一控制電路。聲波雙工器包括一傳送濾波器(TX filter)及一接收濾波器(RX filter)。鎖相迴路至少包括一壓控振盪器(voltage-controlled oscillator,VCO)。壓控振盪器包括一校準共振腔及一可調變負阻抗電路。傳送濾波器、接收濾波器及校準共振腔設置於同一壓電材料基板上。鎖相迴路依據校準共振腔之一頻偏程度，產生對應之一校準訊號。控制電路連接聲波雙工器及鎖相迴路。控制電路再依據校準訊號，調整傳送濾波器或接收濾波器之操作頻率。 According to a second aspect of the invention, an acoustic-wave device with an active calibration mechanism is proposed. The acoustic wave device with active calibration mechanism includes at least one acoustic-wave duplexer, a phase-locked loop (PLL) and a control circuit. The acoustic duplexer includes a transmit filter (TX filter) and a receive filter (RX filter). The phase locked loop includes at least a voltage-controlled oscillator (VCO). The voltage controlled oscillator includes a calibrated resonant cavity and a tunable negative impedance circuit. The transmission filter, the reception filter, and the calibration cavity are disposed on the same piezoelectric material substrate. The phase-locked loop generates a corresponding calibration signal according to the degree of frequency deviation of one of the calibration resonant cavities. The control circuit is connected to the acoustic duplexer and the phase locked loop. The control circuit then adjusts the operating frequency of the transmit filter or the receive filter based on the calibration signal.
為了對本發明之上述及其他方面有更佳的瞭解，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下： In order to better understand the above and other aspects of the present invention, the preferred embodiments are described below, and in conjunction with the drawings, the detailed description is as follows:
100、200‧‧‧具主動校準機制之聲波裝置 100,200‧‧‧Acoustic wave devices with active calibration mechanism
110‧‧‧聲波雙工器 110‧‧‧Sonic duplexer
111‧‧‧傳送濾波器 111‧‧‧Transmission filter
112‧‧‧接收濾波器 112‧‧‧ Receive filter
115‧‧‧相位偏移器 115‧‧‧ phase shifter
120‧‧‧壓控振盪器 120‧‧‧Variable Control Oscillator
121、2211‧‧‧可調變負阻抗電路 121, 2211‧‧‧ adjustable variable negative impedance circuit
130‧‧‧頻率鑑別器 130‧‧‧frequency discriminator
140、240‧‧‧控制電路 140, 240‧‧‧ control circuit
180‧‧‧切換器 180‧‧‧Switcher
190、910‧‧‧壓電材料基板 190, 910‧‧‧ piezoelectric material substrate
220‧‧‧鎖相迴路 220‧‧‧ phase-locked loop
221‧‧‧壓控振盪器 221‧‧‧Variable Control Oscillator
222‧‧‧時脈訊號源 222‧‧‧clock source
223‧‧‧第一分頻器 223‧‧‧First Divider
224‧‧‧鑒頻鑒相器 224‧‧ ‧ phase frequency detector
225‧‧‧充電泵 225‧‧‧Charging pump
226‧‧‧二階RC濾波器 226‧‧‧second-order RC filter
227‧‧‧第二分頻器 227‧‧‧Second divider
900‧‧‧傳統之聲波裝置 900‧‧‧Sound sound wave device
920‧‧‧壓電薄膜層 920‧‧‧ Piezoelectric film layer
930‧‧‧指叉電容結構 930‧‧‧Finger capacitor structure
C1、C2、C4‧‧‧可變電容 C1, C2, C4‧‧‧ variable capacitor
C3‧‧‧二位元電容 C3‧‧‧ two-element capacitor
I1、I2‧‧‧可變電感 I1, I2‧‧‧Variable inductance
Ia‧‧‧切換型電感 Ia‧‧‧Switching Inductors
Ib‧‧‧微機電型電感 Ib‧‧‧Micro-electromechanical inductor
Ic‧‧‧電壓器型電感 Ic‧‧‧Voltage Inductor
L11、L12、L13、L21、L22、L23、L31、L32、L33、L41、L42、L43‧‧‧頻率響應曲線 Frequency response curves of L11, L12, L13, L21, L22, L23, L31, L32, L33, L41, L42, L43‧‧
S11‧‧‧調整訊號 S11‧‧‧Adjustment signal
S12‧‧‧反饋訊號 S12‧‧‧ feedback signal
S13、S23‧‧‧校準訊號 S13, S23‧‧‧ calibration signal
U1‧‧‧傳送共振腔 U1‧‧‧Transmission cavity
U2‧‧‧接收共振腔 U2‧‧‧ receiving cavity
U3‧‧‧校準共振腔 U3‧‧‧ Calibration cavity
T0‧‧‧電晶體 T0‧‧‧O crystal
第1圖繪示聲波裝置(acoustic-wave device)之示意圖。 Figure 1 is a schematic diagram showing an acoustic-wave device.
第2A圖繪示聲波裝置位於低溫狀態之示意圖。 Fig. 2A is a schematic view showing the acoustic wave device in a low temperature state.
第2B圖繪示聲波裝置位於高溫狀態之示意圖。 FIG. 2B is a schematic view showing the acoustic wave device in a high temperature state.
第3A圖繪示聲波裝置在不同溫度之***損耗(Insertion loss)曲線圖。 Figure 3A is a graph showing the insertion loss of the acoustic wave device at different temperatures.
第3B圖繪示聲波裝置在不同溫度之反射損耗(Return loss)曲線圖。 Figure 3B is a graph showing the return loss of the acoustic wave device at different temperatures.
第4圖繪示一實施例之具主動校準機制之聲波裝置之示意圖。 FIG. 4 is a schematic diagram of an acoustic wave device with an active calibration mechanism according to an embodiment.
第5圖繪示聲波雙工器之示意圖。 Figure 5 shows a schematic diagram of a sonic duplexer.
第6A圖繪示可變電容設定於不同電容值之***損耗曲線圖。 FIG. 6A is a graph showing the insertion loss of the variable capacitors set to different capacitance values.
第6B圖繪示可變電感設定於不同電感值之***損耗曲線圖。 Figure 6B is a graph showing the insertion loss of the variable inductance set at different inductance values.
第7A~7C圖繪示可變電感之不同設計的示意圖。 Figures 7A-7C show schematic diagrams of different designs of variable inductors.
第8圖繪示第4圖數位式調頻之壓控振盪器之示意圖。 FIG. 8 is a schematic diagram showing the voltage controlled oscillator of the digitally modulated frequency modulation of FIG. 4.
第9圖繪示另一實施例之具主動校準機制之聲波裝置的示意圖。 FIG. 9 is a schematic diagram of an acoustic wave device with an active calibration mechanism according to another embodiment.
第10圖繪示第9圖類比式調頻之壓控振盪器之示意圖。 FIG. 10 is a schematic diagram showing a voltage controlled oscillator of analog frequency modulation in FIG.
請參照第4圖，其繪示一實施例之具主動校準機制之聲波裝置(acoustic-wave device)100之示意圖。聲波裝置100包括至少一聲波雙工器(acoustic-wave duplexer)110、一壓控振盪器(voltage-controlled oscillator,VCO)120、一頻率鑑別器(frequency discriminator)130及一控制電路140。聲波雙工器110包括一傳送濾波器(TX filter)111及一接收濾波器(RX filter)112。傳送濾波器111用以傳送訊號，接收濾波器112用以接收訊 號。在一實施例中，聲波裝置100可以包括多組聲波雙工器110，以處理多組不同頻段之訊號。多組聲波雙工器110可藉由切換器180來進行切換。 Please refer to FIG. 4, which illustrates a schematic diagram of an acoustic-wave device 100 with an active calibration mechanism. The acoustic wave device 100 includes at least one acoustic-wave duplexer 110, a voltage-controlled oscillator (VCO) 120, a frequency discriminator 130, and a control circuit 140. The acoustic duplexer 110 includes a transmit filter (TX filter) 111 and a receive filter (RX filter) 112. The transmission filter 111 is used to transmit signals, and the receiving filter 112 is used to receive signals. number. In an embodiment, the acoustic wave device 100 can include multiple sets of acoustic duplexers 110 to process signals from multiple sets of different frequency bands. The plurality of sets of sonic duplexers 110 can be switched by the switch 180.
請參照第5圖，其繪示聲波雙工器110之示意圖。接收濾波器112連接一相位偏移器(phase shifter)115。傳送濾波器111包括數個傳送共振腔U1、二個可變電容C1及一可變電感I1。接收濾波器112包括數個接收共振腔U2、二個可變電容C2及一可變電感I2。傳送共振腔U1及接收共振腔U2係為指叉結構，其容易受到溫度或製程等因素而造成間距(pitch)的改變。 Please refer to FIG. 5, which shows a schematic diagram of the acoustic duplexer 110. Receive filter 112 is coupled to a phase shifter 115. The transmission filter 111 includes a plurality of transmission resonators U1, two variable capacitors C1, and a variable inductor I1. The receiving filter 112 includes a plurality of receiving resonant cavities U2, two variable capacitors C2, and a variable inductor I2. The transmission resonant cavity U1 and the receiving resonant cavity U2 are an interdigitated structure which is susceptible to a pitch change due to factors such as temperature or process.
請參照第6A圖，其繪示可變電容C1設定於不同電容值之***損耗曲線圖。以傳送濾波器111為例，在可變電感I1固定為1.5nH之下，頻率響應曲線L31係為可變電容C1設定為0.25pF之***損耗曲線，頻率響應曲線L32係為可變電容C1設定為0.40pF之***損耗曲線，頻率響應曲線L33係為可變電容C1設定為0.55pF之***損耗曲線。由三條頻率響應曲線L31、L32、L33可知，透過可變電容C1的控制，能夠改變傳送濾波器111的操作頻率。同樣地，透過可變電容C2的控制，也能夠改變接收濾波器112的操作頻率。如此一來，如第4圖所示，控制電路140可以控制可變電容C1或可變電容C2，以調整傳送濾波器111或接收濾波器112之操作頻率。 Please refer to FIG. 6A, which shows the insertion loss curve of the variable capacitor C1 set to different capacitance values. Taking the transmission filter 111 as an example, the frequency response curve L31 is an insertion loss curve of the variable capacitance C1 set to 0.25 pF, and the frequency response curve L32 is a variable capacitance C1. The insertion loss curve was set to 0.40 pF, and the frequency response curve L33 was an insertion loss curve in which the variable capacitor C1 was set to 0.55 pF. It can be seen from the three frequency response curves L31, L32, and L33 that the operating frequency of the transmission filter 111 can be changed by the control of the variable capacitor C1. Similarly, the operating frequency of the receiving filter 112 can also be changed by the control of the variable capacitor C2. As such, as shown in FIG. 4, the control circuit 140 can control the variable capacitor C1 or the variable capacitor C2 to adjust the operating frequency of the transmission filter 111 or the receiving filter 112.
請參照第6B圖，其繪示可變電感I1設定於不同電感值之***損耗曲線圖。以傳送濾波器111為例，在可變電容C1 固定為0.25pF之下，頻率響應曲線L41係為可變電感I1設定為0.5nH之***損耗曲線，頻率響應曲線L42係為可變電感I1設定為1.5nH之***損耗曲線，頻率響應曲線L43係為可變電感I1設定為2.5nH之***損耗曲線。由三條頻率響應曲線L41、L42、L43可知，透過可變電感I1的控制，能夠改變傳送濾波器111的操作頻率。同樣地，透過可變電感I2的控制，也能夠改變接收濾波器112的操作頻率。如此一來，如第4圖所示，控制電路140可以控制可變電感I1或可變電感I2，以調整傳送濾波器111或接收濾波器112之操作頻率。 Please refer to FIG. 6B, which shows the insertion loss curve of the variable inductor I1 set to different inductance values. Taking the transmission filter 111 as an example, the variable capacitor C1 Fixed to 0.25pF, the frequency response curve L41 is the insertion loss curve of the variable inductor I1 set to 0.5nH, and the frequency response curve L42 is the insertion loss curve of the variable inductor I1 set to 1.5nH, the frequency response curve L43 is an insertion loss curve in which the variable inductance I1 is set to 2.5 nH. As can be seen from the three frequency response curves L41, L42, and L43, the operating frequency of the transmission filter 111 can be changed by the control of the variable inductor I1. Similarly, the operating frequency of the receiving filter 112 can also be changed by the control of the variable inductor I2. As such, as shown in FIG. 4, the control circuit 140 can control the variable inductor I1 or the variable inductor I2 to adjust the operating frequency of the transmit filter 111 or the receive filter 112.
請參照第7A~7C圖，其繪示可變電感I1、I2之不同設計的示意圖。在各種實施例中，可變電感I1、I2可以採用各種不同的設計。舉例來說，如第7A圖所示，可變電感I1、I2可以是一切換型電感(switch-type inductor)Ia。如第7B圖所示，可變電感I1、I2可以是一微機電型電感(MENS-type inductor)Ib。如第7C圖所示，可變電感I1、I2可以是一電壓器型電感(transformer-type inductor)Ic。 Please refer to FIGS. 7A-7C for a schematic diagram showing different designs of the variable inductors I1 and I2. In various embodiments, the variable inductors I1, I2 can take a variety of different designs. For example, as shown in FIG. 7A, the variable inductors I1, I2 may be a switch-type inductor Ia. As shown in FIG. 7B, the variable inductors I1, I2 may be a MENS-type inductor Ib. As shown in FIG. 7C, the variable inductors I1, I2 may be a transformer-type inductor Ic.
請再參照第4圖，壓控振盪器120包括一校準共振腔U3及一可調變負阻抗電路(tunable negative impedance circuit)121。傳送濾波器111之傳送共振腔U1(繪示於第5圖)、接收濾波器112之接收共振腔U2(繪示於第5圖)及校準共振腔U3設置於同一壓電材料基板190上。各個傳送共振腔U1、各個接收共振腔U2及校準共振腔U3之尺寸、形狀、厚度實質上大致相同， 且皆在同一製程中形成。因此，傳送共振腔U1與接收共振腔U2因溫度因素或製程因素所發生的訊號變異，也同樣會發生在校準共振腔U3。如此一來，只要透過校準共振腔U3的分析，即可得知如何對聲波雙工器110進行主動校準。 Referring again to FIG. 4, the voltage controlled oscillator 120 includes a calibrated resonant cavity U3 and a tunable negative impedance circuit 121. The transmission resonant cavity U1 of the transmission filter 111 (shown in FIG. 5), the receiving resonant cavity U2 of the receiving filter 112 (shown in FIG. 5), and the calibrated resonant cavity U3 are disposed on the same piezoelectric material substrate 190. The size, shape and thickness of each of the transmission resonant cavity U1, the respective receiving resonant cavity U2 and the calibrated resonant cavity U3 are substantially the same. And all are formed in the same process. Therefore, the signal variation of the transmission cavity U1 and the reception cavity U2 due to temperature factors or process factors also occurs in the calibration cavity U3. In this way, as long as the analysis of the calibration cavity U3 is performed, it is known how to actively calibrate the acoustic duplexer 110.
請參照第8圖，其繪示第4圖數位式調頻之壓控振盪器120之示意圖。壓控振盪器120包括校準共振腔U3及可調變負阻抗電路121。可調變負阻抗電路121包括數個二位元電容C3。此些二位元電容C3分別連接於一電晶體T0，使得此些二位元電容C3可以數位的方式分別被開啟或關閉。 Please refer to FIG. 8 , which is a schematic diagram of the voltage controlled oscillator 120 of the digital FM of FIG. 4 . The voltage controlled oscillator 120 includes a calibrated resonant cavity U3 and a tunable negative impedance circuit 121. The adjustable negative impedance circuit 121 includes a plurality of two-bit capacitors C3. The two-bit capacitors C3 are respectively connected to a transistor T0, so that the two-bit capacitors C3 can be turned on or off in a digital manner.
請參照第4圖，頻率鑑別器130以數位之方式輸入一調整訊號S11至可調變負阻抗電路121，以控制此些二位元電容C3，進而獲得對應的反饋訊號S12。透過調整訊號S11的不斷調整並接收對應的反饋訊號S12，頻率鑑別器130可以獲得校準共振腔U3之頻偏程度。 Referring to FIG. 4, the frequency discriminator 130 inputs an adjustment signal S11 to the adjustable negative impedance circuit 121 in a digital manner to control the two-bit capacitance C3 to obtain a corresponding feedback signal S12. By continuously adjusting the adjustment signal S11 and receiving the corresponding feedback signal S12, the frequency discriminator 130 can obtain the degree of frequency offset of the calibration cavity U3.
頻率鑑別器130再依據校準共振腔U3之頻偏程度，產生對應之一校準訊號S13。 The frequency discriminator 130 generates a corresponding one of the calibration signals S13 according to the degree of frequency offset of the calibration cavity U3.
控制電路140連接於聲波雙工器110及頻率鑑別器130。控制電路140再依據校準訊號S13，以數位之方式調整傳送濾波器111或接收濾波器112之操作頻率。如上所述，控制電路140可以上述可變電容C1、C2或可變電感I1、I2來調整傳送濾波器111或接收濾波器112之操作頻率。 The control circuit 140 is connected to the acoustic duplexer 110 and the frequency discriminator 130. The control circuit 140 then adjusts the operating frequency of the transmission filter 111 or the reception filter 112 in a digital manner according to the calibration signal S13. As described above, the control circuit 140 can adjust the operating frequency of the transmission filter 111 or the reception filter 112 by the variable capacitors C1, C2 or the variable inductors I1, I2 described above.
根據上述實施例，具主動校準機制之聲波裝置100 可以透過複製的校準共振腔U3，來瞭解傳送共振腔U1與接收共振腔U2因溫度因素或製程因素所發生的訊號變異，進而執行主動校準的動作。 According to the above embodiment, the acoustic wave device 100 with an active calibration mechanism The copied calibration cavity U3 can be used to understand the signal variation caused by the temperature factor or the process factor of the transmission cavity U1 and the receiving cavity U2, thereby performing the active calibration operation.
請參照第9圖，其繪示另一實施例之具主動校準機制之聲波裝置200的示意圖。在此實施例中，聲波裝置200包括至少一聲波雙工器110、一鎖相迴路(phase-locked loop,PLL)220及一控制電路240。聲波雙工器110之相關說明已敘述於第5~7C圖，在此不再重複敘述。 Please refer to FIG. 9 , which illustrates a schematic diagram of an acoustic wave device 200 with an active calibration mechanism according to another embodiment. In this embodiment, the acoustic wave device 200 includes at least one acoustic duplexer 110, a phase-locked loop (PLL) 220, and a control circuit 240. The description of the sonic duplexer 110 has been described in the fifth to seventh embodiments, and the description thereof will not be repeated here.
鎖相迴路220包括一壓控振盪器221、一時脈訊號源222、一第一分頻器(first divider)223、一鑒頻鑒相器(phase frequency detector,PFD)224、一充電泵(charge pump)225、一二階RC濾波器(second-order RC filter)226及一第二分頻器(second divider)227。時脈訊號源222用以提供一時脈訊號。第一分頻器223連接時脈訊號源222。鑒頻鑒相器224連接第一分頻器223。充電泵225連接鑒頻鑒相器224。二階RC濾波器226連接充電泵225及壓控振盪器221。第二分頻器227連接壓控振盪器221及鑒頻鑒相器224。 The phase locked loop 220 includes a voltage controlled oscillator 221, a clock signal source 222, a first divider 223, a phase frequency detector (PFD) 224, and a charge pump (charge). Pump) 225, a second-order RC filter 226 and a second divider 227. The clock signal source 222 is used to provide a clock signal. The first frequency divider 223 is coupled to the clock signal source 222. The phase frequency detector 224 is connected to the first frequency divider 223. The charge pump 225 is connected to the phase frequency detector 224. The second order RC filter 226 is connected to the charge pump 225 and the voltage controlled oscillator 221. The second frequency divider 227 is connected to the voltage controlled oscillator 221 and the phase frequency detector 224.
鎖相迴路220是一種利用反饋(Feedback)控制原理實現的頻率及相位的同步技術，其作用是將電路輸出的時脈與其外部的參考時脈保持同步。當參考時脈的頻率或相位發生改變時，鎖相迴路220會檢測到這種變化，並且通過其內部的反饋系統來調節輸出頻率，直到兩者重新同步，這種同步又稱為「鎖相」 (Phase-locked)。 The phase-locked loop 220 is a frequency and phase synchronization technique that utilizes the feedback control principle to synchronize the clock output of the circuit with its external reference clock. When the frequency or phase of the reference clock changes, the phase-locked loop 220 detects this change and adjusts the output frequency through its internal feedback system until the two are resynchronized. This synchronization is also called "lock-in phase". " (Phase-locked).
在本實施例中，壓控振盪器221包括校準共振腔U3及可調變負阻抗電路2211。請參照第10圖，其繪示第9圖類比式調頻之壓控振盪器221之示意圖。校準共振腔U3之相關說明同上所述，在此不再贅述。可調變負阻抗電路2211包括一可變電容C4。此可變電容C4可以類比的方式被調整，以達到鎖相迴路220的時脈同步。 In the present embodiment, the voltage controlled oscillator 221 includes a calibration resonant cavity U3 and a variable-variable negative impedance circuit 2211. Please refer to FIG. 10, which is a schematic diagram of a voltage controlled oscillator 221 of analog frequency modulation in FIG. The description of the calibration of the resonant cavity U3 is the same as that described above, and will not be repeated here. The variable negative impedance circuit 2211 includes a variable capacitor C4. This variable capacitor C4 can be adjusted in an analogous manner to achieve clock synchronization of the phase locked loop 220.
請參照第9圖，鎖相迴路220達到時脈同步時，可以獲得校準共振腔U3之一頻偏程度，並產生對應之一校準訊號S23。 Referring to FIG. 9, when the phase-locked loop 220 reaches the clock synchronization, a degree of frequency offset of the calibration cavity U3 can be obtained, and a corresponding calibration signal S23 is generated.
控制電路240連接聲波雙工器110及鎖相迴路220。控制電路240再依據校準訊號S23，以類比之方式調整傳送濾波器111或接收濾波器112之操作頻率。如上所述，控制電路240可以上述可變電容C1、C2或可變電感I1、I2來調整傳送濾波器111或接收濾波器112之操作頻率。 The control circuit 240 is connected to the acoustic duplexer 110 and the phase locked loop 220. The control circuit 240 adjusts the operating frequency of the transmission filter 111 or the reception filter 112 in an analogy manner according to the calibration signal S23. As described above, the control circuit 240 can adjust the operating frequency of the transmission filter 111 or the reception filter 112 by the variable capacitors C1, C2 or the variable inductors I1, I2 described above.
根據上述實施例，具主動校準機制之聲波裝置200可以透過複製的校準共振腔U3，來瞭解傳送共振腔U1與接收共振腔U2因溫度因素或製程因素所發生的訊號變異，進而執行主動校準的動作。 According to the above embodiment, the acoustic wave device 200 with the active calibration mechanism can understand the signal variation caused by the temperature factor or the process factor of the transmitting resonant cavity U1 and the receiving resonant cavity U2 through the duplicated calibrated resonant cavity U3, thereby performing active calibration. action.
綜上所述，雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤 飾。因此，本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In conclusion, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the present invention. Those skilled in the art to which the invention pertains can make various changes and changes without departing from the spirit and scope of the invention. Decoration. Therefore, the scope of the invention is defined by the scope of the appended claims.
Claims (15)
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| TW105107942A TWI644514B (en) | 2016-03-15 | 2016-03-15 | Acoustic-wave device with active calibration mechanism |
| CN201610246818.0A CN107196624B (en) | 2016-03-15 | 2016-04-20 | Acoustic wave device with active calibration mechanism |
| CN201610246512.5A CN107196623B (en) | 2016-03-15 | 2016-04-20 | Acoustic wave device with active calibration mechanism |
| US15/456,680 US10033085B2 (en) | 2016-03-15 | 2017-03-13 | Acoustic-wave device with active calibration mechanism |
| US15/456,665 US10326192B2 (en) | 2016-03-15 | 2017-03-13 | Acoustic-wave device with active calibration mechanism |
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| US4862110A (en) * | 1988-02-18 | 1989-08-29 | Schlumberger Industries | Oscillator, in particular a surface acoustic wave oscillator, frequency controlled by controlling its temperature |
| US6943645B2 (en) * | 2002-05-16 | 2005-09-13 | Murata Manufacturing Co., Ltd | Surface acoustic wave duplexer and communication apparatus having the same |
| US7453335B2 (en) * | 2005-03-28 | 2008-11-18 | Kyocera Corporation | Surface acoustic wave resonator, surface acoustic wave filter and surface acoustic wave duplexer, and communications equipment |
| TW200926630A (en) * | 2007-08-06 | 2009-06-16 | Koninkl Philips Electronics Nv | Crystal-less transceivers |
| US8040190B2 (en) * | 2008-05-01 | 2011-10-18 | Csem Centre Suisse D'electronique Et De Microtechnique Sa-Recherche Et Developpement | Phase-locked loop |
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|---|---|---|---|---|
| US4862110A (en) * | 1988-02-18 | 1989-08-29 | Schlumberger Industries | Oscillator, in particular a surface acoustic wave oscillator, frequency controlled by controlling its temperature |
| US6943645B2 (en) * | 2002-05-16 | 2005-09-13 | Murata Manufacturing Co., Ltd | Surface acoustic wave duplexer and communication apparatus having the same |
| US7453335B2 (en) * | 2005-03-28 | 2008-11-18 | Kyocera Corporation | Surface acoustic wave resonator, surface acoustic wave filter and surface acoustic wave duplexer, and communications equipment |
| TW200926630A (en) * | 2007-08-06 | 2009-06-16 | Koninkl Philips Electronics Nv | Crystal-less transceivers |
| US8040190B2 (en) * | 2008-05-01 | 2011-10-18 | Csem Centre Suisse D'electronique Et De Microtechnique Sa-Recherche Et Developpement | Phase-locked loop |
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